CN109937479A - Lead frame material and its manufacturing method and semiconductor package part - Google Patents
Lead frame material and its manufacturing method and semiconductor package part Download PDFInfo
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- CN109937479A CN109937479A CN201780068101.4A CN201780068101A CN109937479A CN 109937479 A CN109937479 A CN 109937479A CN 201780068101 A CN201780068101 A CN 201780068101A CN 109937479 A CN109937479 A CN 109937479A
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- alloy
- lead frame
- layer
- roughening
- frame material
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
Abstract
The present invention provides lead frame material (10), it includes conductive base (1), with include the conductive base (1) at least single side on the roughening overlay film (3) of at least one layer of roughened layer (2) that directly or via middle layer is formed by the bumps (4) of multiple roughening particles, the bump (4) has following shape: the maximum width in the thickness direction cross-section determination of roughening overlay film (3) is relative to positioned at locating closer to the minimum widith when lower portion measurement of the conductive base (1) side than the maximum width, it is 1~5 times.
Description
Technical field
It leads the present invention relates to the lead frame material for being suitable for resin molded semiconductor device and its manufacturing method and partly
Body packaging part, the resin molded semiconductor device by by semiconductor element and lead frame with surface-treated layer each other
It is electrically connected and is sealed against and is formed with moulded resin.
Background technique
This resin molded semiconductor device has the semiconductor element and lead that will be electrically connected to each other by conducting wire etc.
Frame utilizes the structure of moulded resin sealing.Such resin molded semiconductor device is generally by implementing as external lead frame
The such surface treatment of plating, to form surface coating using such as Sn alloy such as Sn-Pb alloy or Sn-Bi alloy to make
It makes.
In recent years, in order to simplify assembling procedure and reduce cost, started using following lead frame (preplating frame, Pre-
Plated Frame), i.e., utilize solder etc. to printed base plate install when in advance lead frame surface implement for improve with
The plating (such as Ni/Pd/Au) (for example, with reference to patent document 1) of the wetability of solder.
On the other hand, closely sealed between lead frame and moulded resin in resin molded semiconductor device in order to improve
Property, it has been proposed that the technology for being roughened the coating surface of lead frame (for example, with reference to patent document 2).
The technology of coating surface roughening is made into roughing in surface and implementing roughening plating to lead frame, it can be expected that: (1) mould
Resin processed enters the bumps of the plating film of roughening and forms the effect (anchoring effect) of firm mechanical bond, (2) are set by molding
The raising etc. of the raising bring chemical bonding of contact area between rouge and coating surface.
By making the roughing in surface of lead frame, improve the adaptation of moulded resin and lead frame, it is suppressed that lead frame and
As a result removing between moulded resin can be such that the reliability of resin molded semiconductor device improves.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 4-115558 bulletin
Patent document 2: Japanese Unexamined Patent Publication 6-029439 bulletin
Summary of the invention
The problem to be solved in the present invention
By by the roughing in surface of lead frame, so that really can compared with traditional resin molded semiconductor device
Improve moulded resin to the adaptation of lead frame.However, in recent years, becoming more tighter than in the past to level required by reliability
It is severe, it requires even if carry out high temperature and humidity durability test, for example, 85 DEG C of temperature, humidity 85% environment in place 168
In the case where high temperature and humidity test under the harsh conditions of hour, it is also necessary to meet the criterion of acceptability of reliability.On the other hand, exist
Only make in the tradition composition of the roughing in surface of lead frame as described in Patent Document 1, between being generated between resin and lead frame sometimes
Gap is unsatisfactory for the criterion of acceptability of reliability.This is considered as because as resin molded semiconductor device, in recent years, being based on
Using such as QFN (quad flat non-leaded package, Quad Flat Non-Leaded Package) type and SOP (small outline packages,
Small Outline Package) encapsulation such as type gradually increase, adaptation of the resin to lead frame are required horizontal into one
Step is got higher.As a result, in resin molded semiconductor device, about resin to the adaptation of lead frame, due to require even if
It is also required to keep good adaptation under harsh conditions as described above, therefore, it is necessary to further improve.
Project of the invention is to provide lead frame material and its manufacturing method and the semiconductor packages with high reliability
Part, the lead frame material are suitable for being formed when carrying out high temperature and humidity test under harsh conditions especially as described above
Also the leadframe surfaces of good resin closed are able to maintain.
The means solved the problems, such as
The present inventor has made intensive studies in order to solve the above problem, it is contemplated that composition is formed in conductive base
On the cross sectional shape of bump of roughening particle of roughened layer of roughening overlay film be affected to resin closed, have studied anchor
When Gu the good adaptation that effect causes and generates carries out high temperature and humidity test even if under above-mentioned critical conditions whether can protect
It holds, so-called anchoring effect is (especially recessed by the convex-concave surface caused by the bump that the surface of lead frame material is formed
Portion) in filling form resin and generate.
The present inventor is recognized as follows: the roughening by that will be used to be formed in the roughening overlay film formed on conductive base
The bump control of layer is with following shape: maximum width when being roughened the cross-section determination of thickness direction of overlay film relative to
It is being 1~5 times positioned at locating than maximum width closer to the minimum widith when lower portion measurement of conductive base side,
To especially in the position of the minimum widith of the bump of roughening particle, the expansion due to resin be efficiently controlled, received
Stress caused by contracting etc. is concentrated and incidental, resin shears caused peeling.The result found that can will be imitated by anchoring
Good adaptation caused by fruit is brought into play to the maximum extent by roughened layer, and then the bump control by that will form roughened layer
Be made as above-mentioned shape, though progress generally can not be resistant to high temperature and humidity durability test, for example in 85 DEG C of temperature, humidity
It is placed in the environment of 85% in the case of carrying out high temperature and humidity test under 168 hours rigor conditions, is also able to maintain resin to drawing
The good adaptation of wire frame.
That is, main composition of the invention is as follows.
(1) a kind of lead frame material, comprising:
Conductive base, and
It is roughened overlay film comprising directly or via middle layer by multiple roughening particles on at least single side of the conductive base
At least one layer of roughened layer that bump is formed,
The bump has following shape: the maximum width in the cross-section determination of the thickness direction of the roughening overlay film is opposite
In positioned at wider closer to the minimum when lower portion measurement of the conductive base side than locating for the maximum width
Degree is 1~5 times.
(2) lead frame material described in above-mentioned (1), wherein the conductive base be copper, copper alloy, iron, ferroalloy, aluminium or
Aluminium alloy.
(3) lead frame material described in above-mentioned (1) or (2), wherein the roughened layer includes closing selected from copper, copper alloy, nickel, nickel
In gold, palladium, palldium alloy, silver, silver alloy, tin, tin alloy, zinc, kirsite, rhodium, rhodium alloy, ruthenium, ruthenium alloy, iridium and iridium alloy
Metal or alloy.
(4) lead frame material described in any one of above-mentioned (1)~(3), at least one of the surface of the roughening overlay film
Also have on point include at least one layer of surface coating surface coating, the surface coating include selected from palladium, palldium alloy,
Metal or alloy in rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, billon, silver and silver alloy.
(5) lead frame material described in above-mentioned (4), wherein the middle layer is that nickel, nickel alloy, cobalt, cobalt alloy, copper or copper close
Gold.
(6) a kind of manufacturing method of lead frame material, the process including forming roughening overlay film, the roughening overlay film are included in conduction
Property matrix at least single side on directly or via middle layer using plating by formed at least 1 layer of bumps of multiple roughening particles
Roughened layer；The bump has shape below: the maximum width in the thickness direction cross-section determination of the roughening overlay film
Relative to be located at than the maximum width locate closer to the conductive base side lower portion measurement when most
Small width is 1~5 times.
(7) a kind of semiconductor package part, with lead frame material described in any one of above-mentioned (1)~(5).
The effect of invention
Lead frame material of the invention and includes on at least single side of the conductive base by including conductive base
The roughening overlay film of at least one layer of roughened layer directly or via middle layer formed by the bump of multiple roughening particles, and it is described prominent
Object is played with the maximum width in the thickness direction cross-section determination of the roughening overlay film relative to positioned at than the maximum width
To locate closer to the minimum widith when lower portion measurement of the conductive base side be 1~5 times of shape, thus
Even if carrying out high humidity and cyclic temperature durability test, for example, 85 DEG C of temperature, humidity 85% environment in place 168 hours harshnesses
Under the conditions of when carrying out high temperature and humidity test, good resin closed can also be kept to lead frame, and the adaptation is almost
The semiconductor package part that will not be deteriorated, and be constituted using the lead frame material can realize high reliability.
Detailed description of the invention
Fig. 1 is the schematic sectional view of representative lead frame material according to the present invention.
Fig. 2 is the figure for the method for illustrating to calculate the specific surface area of roughened layer.
Fig. 3 is the figure for the maximum width Wmax and minimum widith Wmin that illustrate to constitute the bump of one layer of roughened layer.
Fig. 4 is the schematic sectional view of other lead frame materials according to the present invention.
Fig. 5 is the figure for the maximum width Wmax and minimum widith Wmin that illustrate to constitute the bump of two layers of roughened layer.
Specific embodiment
Next, below with reference to attached drawing, enumerate the specific example of embodiment to lead frame material according to the present invention into
Row explanation.Fig. 1 shows the schematic cross-sectional of representative lead frame material according to the present invention, and the appended drawing reference 1 in Fig. 1 is to lead
Electrical matrix, 2 be roughened layer, and 3 be roughening overlay film, and 4 be bump, and 10 be lead frame material.Lead frame material of the invention
Material 10 includes conductive base 1 and the roughening overlay film 3 including at least one layer of roughened layer 2.
(conductive base)
As long as the conductive material of conductive base 1, for example, can enumerate copper, copper alloy, iron, ferroalloy, aluminium or
Aluminium alloy etc., preferably copper alloy, ferroalloy or aluminium alloy.For lead frame material, particularly preferred use is in conductivity and intensity
Between the good copper alloy of balance because being required to the deformation of tolerance bending machining etc. when engaging with semiconductor element
Intensity.Wherein, as copper alloy, for example, column in CDA (copper development association, Copper Development Association)
Alloy out, i.e., " (Cu-0.15Sn is manufactured C14410 by The Furakawa Electric Co., Ltd., trade name: EFTEC (registrar
Mark) -3) ", " C19400 (Cu-Fe system alloy material, Cu-2.3Fe-0.03P-0.15Zn) ", " C18045 (Cu-0.3Cr-
0.25Sn-0.2Zn is manufactured by The Furakawa Electric Co., Ltd., trade name: EFTEC (registered trademark) -64T), " C50710
(Cu-2.0Sn-0.2Ni-0.05P), it is manufactured by The Furakawa Electric Co., Ltd., trade name: MF202 ", " C70250 (Cu-
3Ni-0.65Si-0.15Mg), manufactured by The Furakawa Electric Co., Ltd., trade name: EFTEC (registered trademark) -7025 " etc..
It should be noted that the unit of the number before each element is " quality % ".It is preferable to use as these copper alloys, draw
Stretching intensity is 350-800N/mm2, preferably 500-800N/mm2, conductivity 30-90%IACS, preferably 50-80%IACS
Copper alloy web.Above-mentioned " %IACS " is indicated international standard soft copper (International Annealed Copper
Standard resistivity 1.7241 × 10-8 Ω m) is set as conductivity when 100%IACS, for example, " 50%IACS's " leads
Electric rate indicates the 50% of the conductivity of international standard soft copper.
In addition, in the case where ferroalloy, such as 42 alloys (Fe-42 mass %Ni), stainless steel can be enumerated etc..Containing such
The conductivity of the conductive base 1 of ferroalloy so high, but can be applied to conductivity do not need it is so high, with transmission
Lead frame material 10 for the purpose of electric signal.
In addition, in the case where aluminium alloy, for example, the Al-Mg alloys such as A5052.
For resin molded semiconductor device, since heat is easy to accumulate in inside by moulded resin, along conduction
Property matrix release inside thermal change obtain it is important.In the present invention, by forming roughening overlay film on the surface of conductive base, and not
The case where forming roughening overlay film is compared, and while heat dissipation effect can be improved, conductive base is made to be thinned to 0.05mm.Such as Tab phenolphthaleinum
The thickness of electrical matrix is thinner than 0.05mm, then cannot obtain enough heat dissipations, if conductive base with a thickness of 2mm or more,
It then can not achieve the miniaturization of semiconductor device.Therefore, the thickness of conductive base 1 is preferably 0.05~2mm, more preferably
0.1~1mm.
(roughening overlay film)
Be roughened overlay film 3 by at least single side of conductive base 1 directly or via middle layer (not shown) by it is multiple roughening
At least one layer of roughened layer 2 that the bump 4 of grain is formed is constituted.
As long as s be made of in addition, being roughened overlay film 3 at least one layer of roughened layer 2, but consider the complexity etc. of manufacturing process,
It is preferred that the roughened layer 2 by 1~3 layer is constituted.For being roughened the forming method of overlay film 3, by forming first layer roughened layer 2-1
Stacking forms more than one factor and first layer roughened layer in composition and formation condition etc. on first layer roughened layer 2-1 later
2-1 different second layer roughened layer 2-2 it is so-called it is multiple roughening and formed, specific surface area can be kept effective with relatively thin film thickness
Ground increases, therefore more preferably (referring to fig. 4).It should be noted that in the present invention, the film thickness of roughening overlay film 3 is not local measurement
, but with by least fluorescent X-ray method (for example, the film thickness of such as SFT 9400 (trade name) manufactured by SII company
Measurement device) average film thickness more than collimator diameter 0.2mm, in the measurement of any 3 points indicates.In addition, when roughening
When overlay film 3 is made of multiple roughened layers 2, all layers of overall thickness is defined as to the thickness of roughening overlay film 3.
In addition, the film thickness of roughening overlay film 3 is not particularly limited, but film thickness is bigger, and the bumps caused by being roughened tend to become
It obtains bigger.Therefore, increase to make to be roughened shape, the lower limit value for being roughened the film thickness of overlay film 3 is preferably 0.2 μm or more, more preferably
It is 0.5 μm or more, further preferably 0.8 μm or more.On the other hand, when the film thickness for being roughened overlay film 3 is more than 3 μm, when conveying
Overlay film 3 falls off, so-called " powder falling " is possible to increase for roughening.Therefore, be roughened overlay film 3 film thickness upper limit value be preferably 3 μm with
Under, more preferably 2 μm hereinafter, further preferably 1.5 μm or less.
[roughened layer]
Roughened layer 2 is formed by the bump 4 of multiple roughening particles.
As the method for forming roughened layer 2, the various methods such as wet type plating, dry type plating can be enumerated, but from can be easy and honest and clean
From the viewpoint of being formed to valence etc., particularly preferably formed by plating.
Roughened layer 2 for example preferably comprise selected from copper, copper alloy, nickel, nickel alloy, palladium, palldium alloy, silver, silver alloy, tin, tin alloy,
Zinc, kirsite, rhodium, rhodium alloy, ruthenium, ruthenium alloy, the metal or alloy in iridium and iridium alloy.From improving to the closely sealed of surface coating
Property from the viewpoint of, especially be roughened overlay film 3 on be further formed aftermentioned surface coating (not shown) when, more preferably be roughened
Layer 2 contains copper, copper alloy, nickel or nickel alloy.As copper alloy, copper-tin alloy and copper-zinc alloy can be enumerated, as nickel alloy,
Nickel-zinc alloy, nickel-tin alloy etc. can be enumerated.
Also, being characterized mainly in that in composition of the invention realizes the bump 4 for constituting the roughening particle of roughened layer 2
Cross sectional shape rationalization, more specifically, as shown in figure 3, control projection object 4 with make it have roughening overlay film 3 thickness
Maximum width Wmax when spending the cross-section determination in direction is more located at conduction relative to locating in the Wmax than the maximum width
Property 1 side of matrix lower portion measurement when minimum widith Wmin be 1~5 times of shape.
This is the result after the present inventor's further investigation, it may be assumed that if forming roughened layer with similar face roughness, is sheared
The shear strength (adhesive strength) of resin is high in test, obtains good resin-bonding, but carrying out high temperature and humidity durability
Test for example places in the environment of 85 DEG C of temperature, humidity 85% and carries out high temperature and humidity test under 168 hours harsh conditions
Afterwards, in the roughened layer with similar face roughness, there are shear strengths to substantially reduce, and is not able to maintain good resin closed
Situation.This point is further studied, as a result, it has been found that, formed roughened layer roughening particle bump cross sectional shape by
Larger impact, especially in the smallest position of the width of bump, stress caused by the thermal expansion of resin, contraction is concentrated, closely sealed
Property reduce.
For this purpose, present inventor has performed further in detail the study found that control forms the thick of the roughened layer of roughening overlay film
The ratio of the maximum width and minimum widith of changing particle is 1~5, that is, control projection object is to make it have the thickness in roughening overlay film
Maximum width when spending the cross-section determination in direction is relative in locating more positioned at conductive base side than the maximum width
Lower portion measurement when minimum widith be 1~5 times of shape, the roughening of the surface roughness with same degree as a result,
In layer, even if carrying out high humidity and cyclic temperature durability test, for example, being placed 168 hours in the environment of 85 DEG C of temperature and humidity 85%
Harsh conditions under carry out high temperature and humidity test after, good resin closed, and the shear strength of resin can also be kept
(adhesive strength) is almost without reduction.
In bump, maximum width is that 1 times of expression maximum width of minimum widith is identical with minimum widith, as protrusion
The shape of object can enumerate substantially cylindric or prism-shaped situation.On the other hand, if the maximum width of bump is more than most
5 times of small width, then since the expansion or shrinkage of the resin at the position of the minimum widith for the bump for forming roughened layer causes
Stress concentrate increase, therefore, anchoring effect cannot be played effectively, and the position of the minimum widith in bump is caused to become easy
Rupture.Therefore, the maximum width of bump is set as 1~5 times of minimum widith.In addition, not only moulded resin plays anchoring effect,
And resin is made to be difficult to happen rupture at the position of the least part for the bump for forming roughened layer, accordingly, for lead frame
Material is not only needing to improve shear strength, but also the tensile strength of vertical direction is also required in the case of further increasing,
The maximum width of bump and the ratio of minimum widith are preferably 1.1~4.9 times, more preferably 1.2~4.8 times, further excellent
It is selected as 1.5 times~4.0 times, most preferably 1.5 times~3.0 times.It should be noted that the shape on the surface of bump can be it is sharp
It is also possible to round and smooth, the maximum width of bump and the ratio of minimum widith are important.
<definition of maximum width and minimum widith about bump>
For the maximum width of the bump in the present invention and minimum widith, by using such as focused ion beam (FIB), machine
Tool grinding the methods of and be formed with roughened layer lead frame material be processed to manufacture vertical cross-section sample, next, for
The roughened layer of vertical cross-section sample carries out cross-section observation using optical microscopy, scanning electron microscope etc., from conductive base
The surface of surface towards roughened layer move in parallel line segment, for forming multiple bumps of roughened layer, every 1 bump is surveyed
Fixed width degree determines maximum value (maximum width) Wmax and minimum value (minimum widith) Wmin.It is described in detail as follows, such as
Shown in Fig. 3, vertical line is drawn from conductive base 1 to the direction of roughened layer, on from its vertex towards the direction of conductive base 1
Scanning is parallel to the line (parallel lines) of matrix, and the width of the maximum value of expression bump 4 at this time is determined as maximum width, if
Parallel lines are further being scanned from the direction that maximum width Wmax is positioned against conductive base 1 in turn for Wmax, it will at this time
The width of minimum value of expression bump 4 be determined as minimum widith, be set as Wmin.Then, in the present invention, ratio
The value of Wmax/Wmin must be 1~5.
It should be noted that the minimum widith Wmin of bump 4 refer to when be roughened overlay film 3 thickness direction cross-section determination when be located at than
The maximum width Wmax's of bump 4 locates closer to the minimum widith when lower portion measurement of 1 side of conductive base
Wmin.The width of this lower portion (bottom part) based on the bump 4 in shearing test by being located at 1 side of conductive base
Determine the understanding of shear strength.It should be noted that observing protrusion in each position of roughened layer 2 to observe arbitrary cross section
Object 4.This is because roughened layer 2 is usually substantially formed in three dimensions, and therefore, the maximum width as measurement bump 4
The roughened layer 2 of Wmax and minimum widith Wmin by the situation of one layer of roughened layer 2, is illustrated in figure 52 layers or more of roughened layer
(for example, being two layers of roughened layer 2-1 and 2-2 in Fig. 5) and the maximum width Wmax and minimum widith that bump 4 can be measured
The situation of Wmin is as measure object, in addition to this, for example, being 2 layers or more of roughened layer and the outmost surface for being roughened overlay film 3
The unclear situation of profile seems the situation of roughened layer 2 heaved from conductive base 1 etc. in the present invention as cannot be at
For the roughened layer of measure object.It is dashed forward in any cross section for 10 be present in a roughened layer 2 by these methods
Object 4 is played, respective maximum width Wmax and minimum widith Wmin is measured, calculates maximum width Wmax relative to minimum widith Wmin
Ratio Wmax/Wmin, the lead frame material 10 for the roughened layer 2 that will be 1~5 times with the average value of these ratios is defined as this
The lead frame material of invention.
<about the interval between the minimum widith and bump of bump>
In addition, there is no special provision to the size of the minimum widith Wmin for the bump 4 for forming roughened layer 2 in the present invention, still
When minimum widith Wmin is too small, there are gap of the resin between the bump 4 and 4 of roughened layer 2 to be difficult to the tendency flowed, and
When minimum widith Wmin is too big, the effect for increasing shear strength has the trend to become smaller.Therefore, the minimum widith of bump 4
Wmin is preferably average in the range of 0.2 μm~3 μm, more preferably 0.5 μm~1 μm of range.In addition, to bump 4,4 it
Between interval be not particularly limited, but the range of preferably 0.2~20 μm of the equispaced between the vertex of bump 4,4, into one
The range of preferably 0.5 μm~10 μm of step.
<specific surface area about roughened layer>
Lead frame material 10 of the invention has roughened layer relative to conductive base (being hereinafter also referred to as " matrix ") 1 first
2.The specific surface area of the roughened layer 2 is preferably 110% or more.This is because if specific surface area less than 110%, cannot be abundant
Obtain anchoring effect.It should be noted that the upper limit for specific surface area is not particularly limited, but if specific surface area is excessive, then slightly
The bumps of change become excessive, and roughened layer, which becomes easy, to fall off, therefore specific surface area is preferably 500% or less.
It should be noted that the cross section of lead frame material 10 as shown in Figure 2 is such as the method for calculating specific surface area,
In the cross-section observation of lead frame material 10, it is roughened the outermost line segment length (being indicated in Fig. 2 by dotted line A) of overlay film 3 divided by leading
Ratio A/B percentage that surface (straight line) length (heavy line B in Fig. 2) of electrical matrix 1 obtains becomes specific surface area (%),
Such as contactless interference microscope measurement device (for example, being manufactured by Bruker AXS company) can be used for example to be surveyed
It is fixed.In addition, as long as the forming position of roughened layer is formed at least part of resin moulded part in the present invention, no
It says and explains, can be handled with whole face, roughened layer 2 can also be partly formed.In addition, for example, it is preferable to being set in lead frame material 10
At least 1/5 or more of the part of rouge molding, the more preferably area 1/2 or more is formed, and adaptation improvement effect thus can be played.
Roughened layer 2 is most preferably formed in resin moulded entire surface.The shape of roughened layer 2 as part setting, can use
Strip, the various forms such as dotted, cyclic annular.In addition, in the resin moulded product for being only one side, for example, it is also possible to only one side shape
At roughened layer 2.
(middle layer)
In addition, lead frame material 10 of the invention can also form middle layer between conductive base 1 and roughening overlay film 3, it should
Middle layer for example for inhibit constitute conductive base 1 constituent diffusion and improve adaptation.Middle layer can for example lift
Nickel, nickel alloy, cobalt, cobalt alloy, copper or copper alloy out.
(surface coating)
In addition, lead frame material 10 of the invention is preferably in at least part on the surface of roughening overlay film 3 directly or in
Interbed further comprises surface coating, and the surface coating includes that at least 1 layer surface coating, surface coating preferably comprises choosing
From in palladium, palldium alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, billon, silver and silver alloy
Metal or alloy.
[surface coating]
As the various alloys for constituting surface coating, for example, the Pd-Ag alloy as palldium alloy, as rhodium alloy
Rhodium-palldium alloy, as ruthenium-iridium alloy of ruthenium alloy, as the platinum-gold alloy of platinum alloy, the platinum-iridium as iridium alloy is closed
Gold, the gold-silver alloy as billon and silver-tin alloy as silver alloy etc..Surface coating can be one kind, but preferably 2
Layer or more.Representative layer construction in the case where being two layers or more as the surface coating for constituting surface coating, is pressed from roughening
The lamination order of 3 side of overlay film can enumerate Pd/Au, Rh/Au, Pd/Ag/Au, Pd/Rh/Au, Ru/Pd/Au etc..By as described above
Surface coating layer is formed on roughening overlay film, to be formed slightly so as to improve lead frame to the heat resistance of fever, while can be improved
The intensity for changing the bump of the roughening particle of the roughened layer of overlay film, prevents the breakage of bump, can further play anchoring effect.
In addition, more preferable roughened layer is 2 layers of copper and mickel and surface coating layer is from the viewpoint of improving the adaptation to surface coating
It Pd/Au2 layers or Rh/Au2 layers, is further preferably constituted as the layer of roughened layer, downside roughened layer is copper, upside roughened layer is nickel
2 layers, and constituted as the layer of surface coating layer, downside surface coating is Pd, uper side surface coating is Au 2 layers or
It is 2 layers of Au that downside surface coating layer, which is Rh, uper side surface coating,.
If the film thickness of these surface coatings is too thick, the concave-convex surface of roughening overlay film 3 can be buried, may be unable to give full play
The effect of aforementioned present invention, and surface coating is mainly made of precious metal material, thus may result in increased costs.Cause
This, the film thickness of each surface coating, in terms of the total film thickness (film thickness of surface coating) of the surface coating after stacking, preferably
For 1 μm hereinafter, more preferably 0.03 μm or less.
(manufacturing method about lead frame material)
Next, illustrating the manufacturing method of lead frame material 10 of the invention.
Prepare conductive base 1, catholyte degreasing process and pickling process are carried out to the conductive base 1.Next, according to
Need, middle layer formed by plating, then formed by plating include at least one layer of roughened layer 2 roughening overlay film 3, then into
One step is as needed, by plating, forms the surface coating including at least one layer of surface coating, thus can manufacture lead frame material
Material 10.As the representative example of specific manufacturing condition, catholyte degreasing condition is shown in table 1, pickling item is shown in table 2
Part shows the formation condition of various middle layers in table 3, and the formation condition of various roughened layers 2 is shown in table 4, is shown in table 5 various
The formation condition of surface coating.In the manufacturing method of above-mentioned lead frame material 10, middle layer, roughened layer 2 and table are instantiated
Face coating is all the situation by plating manufacture.Due to stirring, temperature by current density, processing time etc. can compare
The easily shape of control projection object and easy to operate, it is preferred, therefore, that roughened layer 2 is formed with galvanoplastic, in addition, for centre
Layer and surface coating, from the viewpoint of productivity, it is also preferred that formed by the wet type plating method as galvanoplastic, but
It can be manufactured, be not particularly limited by dry type plating method or other manufacturing methods.
[table 1]
1. catholyte degreasing condition of table
[table 2]
2. acid washing conditions of table
[table 3]
The formation condition of the various middle layers of table 3.
[table 4]
The formation condition of the various roughened layers of table 4.
[table 5]
The formation condition of the various surface coatings of table 5.
Embodiment
Below based on embodiment, the present invention is described in more detail, but the present invention is not limited to the examples.
The plate thickness for preparing the test chip size for being previously cut to 40mm × 40mm is various electric conductivity shown in the table 6 of 0.2mm
Matrix, and in table 1 above shown under the conditions of carry out catholyte degreasing.Next, being led under the conditions shown in Table 2
After the pickling of electrical matrix, at least one layer of roughened layer is formed with layer structure shown in table 6 on the surface of conductive base, is obtained
The test film of lead frame material.It should be noted that not only controlling specific surface area in the formation of roughened layer, go back thick in controlling sections
Change the maximum width of the bump of layer and the ratio of minimum widith.In Examples 1 to 30, for embodiment 11~13, in addition to
Except the roughened layer of downside, roughening overlay film is also further formed upside roughened layer, thus be made of two layers of roughened layer, in addition, for
Embodiment 22~24 is further formed middle layer between conductive base and roughening overlay film, and for embodiment 29 and 30,
Be roughened overlay film also formed in addition to the roughened layer of downside other than on the upside of roughened layer, to be made of 2 layers of roughened layer, and be further formed including
Two layers of surface coating of downside surface coating and uper side surface coating.As reference, in comparative example 1, although roughening
Layer specific surface area it is very big, be 550%, but do not control to be formed the bump of roughened layer maximum width and minimum widith it
Than, so, production obtains except the scope of the present invention the test film of the lead frame material of (5.2 times).
For above-mentioned test film, using upper Long (KOHTAKI) smart machine Co. Ltd. system transfer modling experimental rig (ProductName
Claim: Model FTS), it is infused under conditions of 90 seconds retention times, injection pressure 6.865MPa after 130 DEG C of mold temperatures, molding
Enter moulded resin and form, to form 10mm2The pudding-like test film of contact area.Each test film is placed in high temperature and humidity examination
It tests and (at 85 DEG C, is kept for 168 hours under 85%RH), resin closed and powder falling are evaluated under the following conditions for each test film
Property.Its evaluation result is as shown in table 7.
(resin closed evaluation)
Resin: G630L is evaluated, (trade name) is manufactured by Sumitomo Bakelite Co., Ltd.
Evaluation condition: device: 4000Plus, Nordson Advanced Technology Co., Ltd. manufacture (trade name),
Load transducer: 50 kilograms
Measurement range: 10 kilograms
Test speed: 100 μm/s
Test height: 10 μm
By resin closed evaluation result is shown in table 7.It should be noted that the evaluation of the resin closed shown in table 7
In, think that resin closed is excellent as shear strength (peel strength) average out to 9.8MPa or more, be expressed as " A ", shearing is strong
Think that resin closed is good when spending (peel strength) average out to 4.9MPa more than or lower than 9.8MPa, is expressed as " B ", and work as
When shear strength (peel strength) is averagely lower than 4.9MPa, it is believed that resin closed is poor, is expressed as " C ".
Resin closed is evaluated respectively by measurement " initial shear strength " and " shear strength after high temperature and humidity test ".
" shear strength after high temperature and humidity test " be each test film has been carried out it is resin moulded after in 85 DEG C of temperature, humidity 85%
Value after being placed 168 hours under environment.In addition, " initial shear strength " be each coupons have just been carried out it is resin moulded after
The shear strength of (before high temperature and humidity test).
(powder falling assessment)
Carry out feeling evaluation powder falling by visual observation.By it evaluation result is shown in table 7.It should be noted that for powder falling shown in table 7
Property " A (excellent) " is expressed as when not confirming from surface powder falling, when slightly generate powder falling when be expressed as " B (good) ", powder falling hair
It is expressed as " C (unqualified) " when raw very more, " A " and " B " is for practical level.
[table 6]
[table 7]
7. Evaluation results of table
According to the evaluation result of table 7, for either one or two of Examples 1 to 30, initial shear strength and high temperature and humidity
Shear strength after test is all " A " or " B ", maintains good resin closed, in addition, powder falling is also " A " or " B "
Level, for practical.And the specific surface area of roughened layer be very big 550% but to formed roughened layer bump most
The ratio of big width and minimum widith does not carry out controlling and out of the range of the present invention in the comparative example 1 of (5.2), although initially cutting
Shearing stress is " A ", and resin closed is excellent, but the shear strength after high temperature and humidity test becomes " C ", and resin closed is significantly
Deterioration is " C ", is not for practical level in addition, powder falling is also poor.
Industrial availability
Even if lead frame material of the invention carry out high humidity and cyclic temperature durability test, for example in 85 DEG C of temperature and humidity
When placing progress high temperature and humidity test under 168 hours harsh conditions in 85% environment, it can also keep to the good of lead frame
Good resin closed and hardly deteriorate, using the semiconductor package part that the lead frame material is constituted may be implemented it is high can
By property.
Description of symbols
1 conductive base
2 roughened layers
The first roughened layer of 2-1 (the first layer roughened layer since substrate side)
The second roughened layer of 2-2 (second layer roughened layer since substrate side)
3,3-1 is roughened overlay film
4,4-1 bump
10,10A lead frame material
A is roughened the section line segment length of the outmost surface of overlay film
The section line segment length on the surface of B conductive base
Claims (7)
1. a kind of lead frame material, includes
Conductive base, and
It is roughened overlay film comprising directly or via middle layer by multiple roughening particles on at least single side of the conductive base
At least one layer of roughened layer that bump is formed,
The bump has following shape: the maximum width in the cross-section determination of the thickness direction of the roughening overlay film is opposite
In positioned at wider closer to the minimum when lower portion measurement of the conductive base side than locating for the maximum width
Degree is 1~5 times.
2. lead frame material according to claim 1, wherein the conductive base be copper, copper alloy, iron, ferroalloy,
Aluminum or aluminum alloy.
3. lead frame material according to claim 1 or 2, wherein the roughened layer includes being selected from copper, copper alloy, nickel, nickel
Alloy, palladium, palldium alloy, silver, silver alloy, tin, tin alloy, zinc, kirsite, rhodium, rhodium alloy, ruthenium, ruthenium alloy, iridium and iridium alloy
Metal or alloy in group.
4. lead frame material described in any one of claim 1 to 3, at least the one of the surface of the roughening overlay film
Also have on part include at least one layer of surface coating surface coating, the surface coating include selected from palladium, palldium alloy,
Rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, billon, silver and silver alloy group in metal or conjunction
Gold.
5. lead frame material according to claim 4, wherein the middle layer be nickel, nickel alloy, cobalt, cobalt alloy, copper or
Copper alloy.
6. a kind of manufacturing method of lead frame material, the process including forming roughening overlay film, the roughening overlay film are included in conduction
Property matrix at least single side on directly or via middle layer using plating by formed at least 1 layer of bumps of multiple roughening particles
Roughened layer；
The bump has following shape: the maximum width in the cross-section determination of the thickness direction of the roughening overlay film is opposite
In positioned at wider closer to the minimum when lower portion measurement of the conductive base side than locating for the maximum width
Degree is 1~5 times.
7. a kind of semiconductor package part, with lead frame material according to any one of claims 1 to 5.
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| JP2016-253968 | 2016-12-27 | ||
| JP2016253968 | 2016-12-27 | ||
| PCT/JP2017/045451 WO2018123708A1 (en) | 2016-12-27 | 2017-12-19 | Lead frame member and method for manufacturing same, and semiconductor package |
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| CN109937479A true CN109937479A (en) | 2019-06-25 |
| CN109937479B CN109937479B (en) | 2023-01-13 |
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| JP (1) | JP6479265B2 (en) |
| KR (1) | KR102482396B1 (en) |
| CN (1) | CN109937479B (en) |
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| JP6805217B2 (en) * | 2018-10-18 | 2020-12-23 | Ｊｘ金属株式会社 | Conductive materials, molded products and electronic components |
| JP7014695B2 (en) * | 2018-10-18 | 2022-02-01 | Ｊｘ金属株式会社 | Conductive materials, molded products and electronic components |
| CN117043940A (en) * | 2021-07-16 | 2023-11-10 | 古河电气工业株式会社 | Lead frame material, method for manufacturing the same, and semiconductor package |
| WO2023286697A1 (en) * | 2021-07-16 | 2023-01-19 | 古河電気工業株式会社 | Lead frame material and method for producing same, and semiconductor package |
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- 2017-12-19 CN CN201780068101.4A patent/CN109937479B/en active Active
- 2017-12-19 KR KR1020197013787A patent/KR102482396B1/en active IP Right Grant
- 2017-12-19 WO PCT/JP2017/045451 patent/WO2018123708A1/en active Application Filing
- 2017-12-19 JP JP2018518662A patent/JP6479265B2/en active Active
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| Publication number | Publication date |
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| TWI762546B (en) | 2022-05-01 |
| JPWO2018123708A1 (en) | 2018-12-27 |
| WO2018123708A1 (en) | 2018-07-05 |
| KR20190096964A (en) | 2019-08-20 |
| TW201830627A (en) | 2018-08-16 |
| JP6479265B2 (en) | 2019-03-06 |
| KR102482396B1 (en) | 2022-12-28 |
| CN109937479B (en) | 2023-01-13 |
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