TW201826408A - 具有相反輪廓銅柱的整合扇出結構 - Google Patents

具有相反輪廓銅柱的整合扇出結構 Download PDF

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TW201826408A
TW201826408A TW106122249A TW106122249A TW201826408A TW 201826408 A TW201826408 A TW 201826408A TW 106122249 A TW106122249 A TW 106122249A TW 106122249 A TW106122249 A TW 106122249A TW 201826408 A TW201826408 A TW 201826408A
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Taiwan
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polymer layer
opening
metal
layer
polymer
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TW106122249A
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TWI659478B (zh
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鄭錫圭
張兢夫
韓至剛
黃信傑
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台灣積體電路製造股份有限公司
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Abstract

本發明實施例係關於一種方法，其包含：形成一第一聚合物層以覆蓋一晶圓之一金屬墊；及圖案化該第一聚合物層以形成一第一開口。暴露於該第一開口之該第一聚合物層之一第一側壁具有一第一傾斜角，其中該第一側壁與該金屬墊接觸。該方法進一步包含：在該第一開口中形成一金屬柱；切割該晶圓以產生一裝置晶粒；將該裝置晶粒囊封於一囊封材料中；執行一平坦化以顯露該金屬柱；在該囊封材料及該裝置晶粒上方形成一第二聚合物層；及圖案化該第二聚合物層以形成一第二開口。透過該第二開口暴露該金屬柱。暴露於該第二開口之該第二聚合物層之一第二側壁具有大於該第一傾斜角之一第二傾斜角。

Description

具有相反輪廓銅柱的整合扇出結構
本發明實施例係有關具有相反輪廓銅柱的整合扇出結構。
隨著半導體技術之發展，半導體晶片/晶粒變得越來越小。同時，需要將更多功能整合至半導體晶粒中。相應地，半導體晶粒需要具有使越來越多I/O墊封裝至較小面積中，且I/O墊之密度隨時間增大。因此，裝置晶粒之封裝變得更困難，其不利地影響封裝之良率。 為解決此問題，已開發將一裝置晶粒囊封於一囊封材料(諸如模塑料)中且形成連接至裝置晶粒之表面墊之重佈線的程序。重佈線跨越比裝置晶粒大之一面積，且允許在無需增加裝置晶粒之面積之情況下形成更多I/O墊。
本發明的一實施例係關於一種方法，其包括：形成一第一聚合物層以覆蓋一晶圓之一金屬墊；圖案化該第一聚合物層以形成一第一開口，其中透過該第一開口暴露該金屬墊，其中自該第一開口暴露之該第一聚合物層之一第一側壁界定投射於該金屬墊之一上表面上方之一第一傾斜角；在該第一開口中形成一金屬柱；形成環繞及覆蓋該金屬柱之一介電層；切割該晶圓以產生一裝置晶粒；將該裝置晶粒囊封於一囊封材料中；執行一平坦化以顯露該金屬柱；在該囊封材料及該裝置晶粒上方形成一第二聚合物層；及圖案化該第二聚合物層以形成一第二開口，其中透過該第二開口暴露該金屬柱，其中暴露於該第二開口之該第二聚合物層之一第二側壁具有大於該第一傾斜角之一第二傾斜角。 本發明的一實施例係關於一種方法，其包括：形成一第一聚合物層以覆蓋一晶圓之一金屬墊；圖案化該第一聚合物層以形成一第一開口，其中透過該第一開口暴露該金屬墊；以一第一溫度烘烤該晶圓；在該第一開口中形成一金屬柱；形成環繞及覆蓋該金屬柱之一介電層；切割該晶圓以產生一裝置晶粒；將該裝置晶粒囊封於一囊封材料中；執行一平坦化以顯露該金屬柱；在該囊封材料及該裝置晶粒上方形成一第二聚合物層；圖案化該第二聚合物層以形成一第二開口，其中透過該第二開口暴露該金屬柱；以比該第一溫度低之一第二溫度烘烤該第二聚合物層；及形成具有填充該第二開口之一部分的一重佈線。 本發明的一實施例係關於一種封裝，其包括：一裝置晶粒，其包括一金屬墊、覆蓋該金屬墊之邊緣部分的一第一聚合物層及延伸至該第一聚合物層中以接觸該第一聚合物層之一第一側壁的一金屬柱，其中該第一聚合物層之該第一側壁界定相對於該金屬墊之一上表面之一第一傾斜角；一囊封材料，其囊封該裝置晶粒，其中該金屬柱之一頂面與該囊封材料之一頂面共面；一第二聚合物層，其位於該囊封材料及該裝置晶粒上方；及一重佈線，其具有延伸至該第二聚合物層中以接觸該第二聚合物層之一第二側壁的一部分，其中該第二側壁具有大於該第一傾斜角之一第二傾斜角。
以下揭露提供用於實施本揭露之不同特徵的諸多不同實施例或實例。下文將描述組件及配置之特定實例以簡化本揭露。當然，此等僅為實例且不意欲具限制性。例如，在以下描述中，「使一第一構件形成於一第二構件上方或一第二構件上」可包含其中形成直接接觸之該第一構件及該第二構件的實施例，且亦可包含其中可形成介於該第一構件與該第二構件之間的額外構件使得該第一構件及該第二構件可不直接接觸的實施例。此外，本揭露可在各種實例中重複元件符號及/或字母。此重複係為了簡化及清楚且其本身不指示所討論之各種實施例及/或組態之間的一關係。 此外，為便於描述，諸如「下伏」、「下方」、「下」、「上覆」、「上」及其類似者之空間相對術語可在本文中用於描述一元件或構件與另外(若干)元件或(若干)構件之關係，如圖中所繪示。空間相對術語除涵蓋圖中所描繪之定向之外，亦意欲涵蓋裝置在使用或操作中之不同定向。設備可依其他方式定向(旋轉90度或依其他定向)且亦可相應地解譯本文所使用之空間相對描述詞。 根據各種例示性實施例來提供一種封裝及其形成方法。繪示形成該封裝之中間階段。討論實施例之變型。在各種視圖及繪示性實施例中，相同元件符號用以標示相同元件。 圖1至圖24繪示根據一些實施例之形成一整合扇出(InFO)封裝之中間階段之橫截面圖。圖27中所展示之程序流程300中亦示意性地繪示圖1至圖24中所展示之步驟。 圖1繪示根據一些實施例之晶圓10之一橫截面圖。晶圓10包含複數個半導體晶片12。晶圓10進一步包含延伸至半導體晶片12中之半導體基板14。半導體基板14可為一塊矽基板或一絕緣體上覆矽基板。半導體基板14亦可包含其他半導體材料，其包含III族元素、IV族元素及V族元素。積體電路16形成於半導體基板14之表面14A處。積體電路16中可包含互補金屬氧化物半導體(CMOS)電晶體。 半導體晶片12可進一步包含位於半導體基板14上方之層間介電質(ILD) 17及位於ILD 17上方之互連結構22。互連結構22包含介電層24及形成於介電層24中之金屬線20及通路18。根據本揭露之一些實施例，介電層24由低介電係數材料形成。低介電係數材料之介電常數(k值)可(例如)小於約2.8或小於約2.5。金屬線20及通路18可由銅、一銅合金或其他含金屬導電材料形成。可使用單鑲嵌及/或雙鑲嵌程序來形成金屬線20及通路18。 金屬墊26形成於互連結構22上方，且可透過金屬線20及通路18電耦合至電路16。金屬墊26可為鋁墊或鋁銅墊，或可包含其他金屬。根據本揭露之一些實施例，下伏且接觸金屬墊26之金屬構件係金屬線。根據替代實施例，下伏且接觸金屬墊26之金屬構件係金屬通路。 鈍化層28經形成以覆蓋金屬墊26之邊緣部分。透過鈍化層28中之一開口暴露金屬墊26之各者之中心部分。鈍化層28可由一非多孔材料形成。根據本揭露之一些實施例，鈍化層28係一複合層，其包含氧化矽層(圖中未展示)及該氧化矽層上方之氮化矽層(圖中未展示)。根據替代實施例，鈍化層28由無摻雜矽酸鹽玻璃(USG)、氮氧化矽及/或其類似者形成。儘管圖中展示一個鈍化層28，但可存在一個以上鈍化層。 聚合物層30塗覆於鈍化層28上方且覆蓋鈍化層28。各自步驟經繪示為圖27所展示之程序流程中之步驟302。聚合物層30由一聚合物形成，該聚合物可為一光敏聚合物，諸如聚醯亞胺、聚苯並噁唑(PBO)、苯並環丁烯(BCB)或其類似者。執行一預烘烤，接著進行曝光，如圖1中所展示。微影遮罩32 (其包含具有所要圖案之不透明部分及透明部分)用以曝光聚合物層30，其中光34穿過微影遮罩32之透明部分且由微影遮罩32之不透明部分阻擋。 接著，使經曝光之聚合物層30顯影，其中移除一些部分以形成開口31，且使下伏金屬墊26之中心部分暴露於開口31。各自步驟經繪示為圖27中所展示之程序流程中之步驟304。圖2中展示所得晶圓10。根據本揭露之一些實施例，聚合物層30之側壁之傾斜角γ係實質上垂直的，例如，在約85度至約95度之範圍內。 在使聚合物層30顯影之後，晶圓10經進一步烘烤以固化聚合物層30且驅除溶劑。各自步驟經繪示為圖27中所展示之程序流程中之步驟306。圖3中展示所得晶圓10。根據一些實施例，用於烘烤晶圓10之相對較高溫度可在約370°C至約410°C之範圍內。根據一些實施例，烘烤可持續約40分鐘至約120分鐘之間的一時間段。烘烤導致聚合物層30完全固化。 圖25繪示晶圓10之一部分之一放大圖。如圖25中所展示，在高溫烘烤之後，聚合物層30之側壁輪廓變平滑且被修圓，其中聚合物層30之側壁30'具有一平滑且連續之經修圓部分。換言之，自側壁30'之底部至頂部，側壁30'之傾斜角可連續且平滑地增大。虛線37示意性地表示高溫烘烤之前之聚合物層30之側壁之位置及輪廓，且經修圓側壁30'繪示高溫烘烤之後之聚合物層30之形狀。可觀察到，高溫烘烤引起聚合物層30朝向金屬墊26之中心線回銲。回銲係一部分回銲，且聚合物層30經軟化為具有一高黏度。聚合物層30之回銲引起側壁30'之傾斜角減小。例如，在其中側壁30'接觸金屬墊26之位置(或緊鄰區域)處，側壁30'之傾斜角γ'在約15度至約45度之範圍內，且可在約20度至約30度之範圍內。減小角γ'可促成後續平坦化期間之聚合物層30與金屬墊26之間的應力減小，且減小聚合物層30自金屬墊26剝離之可能性。 選擇足以引起聚合物層30經輕微回銲以產生圖25中所展示之輪廓的烘烤溫度。然而，回銲導致開口31之寬度自W1減小至W2。根據一些實施例，寬度差(W1-W2)在約6 µm至約10 µm之範圍內。比率W2/W1可在約0.8至約0.9之範圍內。藉由選擇適當烘烤溫度來控制回銲以維持金屬墊26與上覆金屬柱46 (圖26)(其將在後續步驟中被形成)之間的足夠接觸面積。應瞭解，所要烘烤溫度部分取決於聚合物30之材料。此外，聚合物30之組合物(諸如將在烘烤期間蒸發之溶劑量)亦影響所要烘烤溫度，且因此可執行實驗以導致所要回銲。 接著，參考圖4，透過(例如)物理氣相沈積(PVD)來將凸塊下金屬(UBM)層36沈積於聚合物層30上。根據本揭露之一些實施例，UBM層36由一銅層或一銅合金層形成。根據替代實施例，UBM層36包含一鈦層及由銅或一銅合金形成之一晶種層。UBM層36亦與金屬墊26接觸。接著，施加及圖案化光阻劑38以形成透過其暴露UBM層36之開口。 參考圖5，透過(例如)鍍覆來將金屬區域42選擇性地沈積至開口40中。各自步驟經繪示為圖27中所展示之程序流程中之步驟308。根據一些例示性實施例，金屬區域42由在用於熔化銲料之回銲程序中不熔化之一非銲接材料形成。例如，金屬區域42可由銅或一銅合金形成。銲料帽44可形成於金屬區域42之頂面上，其中銲料帽44可由一Sn-Ag合金、一Sn-Cu合金、一Sn-Ag-Cu合金或其類似者形成，且可為無鉛銲料帽或含鉛銲料帽。亦可透過鍍覆形成銲料帽44。 在形成金屬區域42及銲料帽44之後，移除光阻劑38，如圖6中所展示。接著，移除先前由光阻劑38覆蓋之UBM層36之部分以留下金屬區域42及銲料帽44不被移除，如圖7中所展示。在後續討論中，UBM層36之剩餘部分及金屬區域42統稱為金屬柱46。 根據一些實施例，一回銲經執行使得銲料帽44具有圓角頂面。銲料帽44中之銲料包含保持與金屬區域42重疊之一些部分，且可或可不包含向下流動以接觸金屬柱46之側壁的一些其他部分。經回銲之銲料帽44可不覆蓋金屬柱46之側壁之底部部分。根據替代實施例，由於銲料帽44將在一後續步驟中被移除，所以不執行銲料帽44之回銲。 接著，如圖8中所展示，對銲料帽44執行一探測步驟以測試半導體晶片12之電性質。藉由使探針48與銲料帽44接觸來執行探測。探針48係探針卡50之部分，探針卡50電連接至一測試設備(圖中未展示)。透過探測來發現缺陷半導體晶片12且判定良好半導體晶片12。有利地，銲料帽44比下伏金屬柱46軟。相應地，探針48與銲料帽44之間的接觸比探針48與金屬柱46之間的接觸好。因此，探測比未形成銲料帽44時可靠。 在探測之後，形成聚合物層52以覆蓋晶圓10之頂面，如圖9中所展示。各自步驟經繪示為圖27中所展示之程序流程中之步驟310。因此，將金屬柱46及銲料帽44嵌入聚合物層52中，其中聚合物層52之頂面高於銲料帽44之頂端。聚合物層52可由選自相同於聚合物層30之候選材料的一材料(諸如PBO)形成。接著，對晶圓10執行一晶粒切割，且使半導體晶片12彼此分離。各自步驟經繪示為圖27中所展示之程序流程中之步驟312。經分離之半導體晶片12在下文中指稱裝置晶粒12。 圖10至圖23繪示裝置晶粒12之封裝，其形成InFO封裝，使得InFO封裝之所得電連接器(諸如銲料區域)可分佈於比裝置晶粒12大之區域。圖10繪示載體54及形成於載體54上之離型層(release layer) 56。載體54可為一玻璃載體，且可具有一圓形俯視形狀及一共同矽晶圓之一大小。離型層56可由一光熱轉換(LTHC)塗覆材料形成。離型層56之頂面係平坦的。介電層58形成於離型層56上。根據一些實施例，介電層58由一聚合物形成，該聚合物亦可為一光敏材料(諸如聚苯並噁唑(PBO)、聚醯亞胺、苯並環丁烯(BCB)或其類似者)，可透過曝光及顯影來圖案化介電層58。 圖11至圖13繪示金屬柱60之形成。各自步驟經繪示為圖27中所展示之程序流程中之步驟313。在整個描述中，因為金屬柱60穿過隨後施配之囊封材料，所以金屬柱60替代地指稱貫穿通路60。 參考圖11，透過(例如)物理氣相沈積(PVD)形成金屬晶種層62。根據一些實施例，金屬晶種層62可包含銅，或可包含一鈦層及該鈦層上方之一銅層。在金屬晶種層62上方形成光阻劑64。 接著，使用一光微影遮罩(圖中未展示)來對光阻劑64執行一曝光。在一後續顯影之後，開口66形成於光阻劑64中，如圖11中所展示。金屬晶種層62暴露於開口66。開口66可具有一沙漏計時器輪廓，其中底部寬度W1及頂部寬度W2大於中間寬度W3。此外，開口66之最小寬度可接近於開口66之中間寬度。 光阻劑64之材料經選擇以使所得開口66具有沙漏計時器輪廓。根據一些例示性實施例，光阻劑包含TOK P50系列光阻劑(由Tokyo Ohka Kogyo America Incorporated製造)。根據一些實施例，TOK P50可包含聚丙烯酸酯、交聯劑及一光敏引發劑。由於使用適當光阻劑材料且調諧用於曝光及顯影之程序條件，所以可產生沙漏計時器輪廓。 接著，如圖12中所展示，藉由鍍覆來形成貫穿通路60。鍍覆速率經控制以確保鍍覆貫穿通路60之形狀依循開口66之形狀。在後續步驟中，移除光阻劑64，且因此暴露金屬晶種層62之下伏部分。接著，在一蝕刻步驟中移除金屬晶種層62之暴露部分。圖13中繪示所得貫穿通路60。在整個描述中，金屬晶種層62之剩餘部分被視為貫穿通路60之部分且不被單獨繪示。 貫穿通路60具有比各自頂部部分及各自底部部分窄之中間部分。應注意，圖13繪示一垂直面中之貫穿通路60之形狀。若自任何其他垂直面觀看，則貫穿通路60亦可具有沙漏計時器輪廓。貫穿通路60之俯視形狀可為圓形、矩形、正方形、六邊形或其類似者。 圖14繪示將裝置晶粒12放置至圖13中所展示之結構上之透視圖，其中裝置晶粒12經配置成列及行。放置在探測期間發現之良好裝置晶粒12，且捨棄缺陷裝置晶粒12。圖14中未展示貫穿通路60，但其亦係存在的。 圖15繪示圖14中所展示之結構之一部分之橫截面圖。圖15中繪示僅一單一裝置晶粒12及其周圍貫穿通路60。然而，應注意，圖15至圖23中所展示之程序步驟被執行於晶圓級處，且被執行於載體54上之所有裝置晶粒12上。裝置晶粒12放置於載體54上，且透過晶粒附著膜(DAF) 68 (其係一黏著膜)黏著於介電層58。各自步驟經繪示為圖27中所展示之程序流程中之步驟314。 接著，參考圖16，使囊封材料70囊封於裝置晶粒12及貫穿通路60上。各自步驟經繪示為圖27中所展示之程序流程中之步驟316。囊封材料70填充相鄰貫穿通路60之間的間隙及貫穿通路60與裝置晶粒12之間的間隙。囊封材料70可包含一模塑料、一成型底部填膠、一環氧樹脂或一樹脂。模塑料可包含一聚合物(諸如一樹脂)及該聚合物中之填料，其中填料可包含二氧化矽(非晶SiO2 )、氧化鋁等等之球形粒子。囊封材料70之頂面高於金屬柱46及貫穿通路60之頂端。 接著，如圖17中所展示，執行一平坦化(諸如一化學機械拋光(CMP)步驟或一研磨步驟)以薄化囊封材料70，直至暴露貫穿通路60及金屬柱46。各自步驟經繪示為圖27中所展示之程序流程中之步驟318。歸因於研磨，貫穿通路60之頂端與金屬柱46之頂面齊平(共面)，且與囊封材料70之頂面共面。在所繪示之例示性實施例中，執行平坦化，直至暴露金屬柱46。相應地，移除與金屬柱46重疊之銲料帽44之部分。金屬柱46之側壁上之銲料帽44之部分(若由回銲引起)可在平坦化之後保留。 圖26繪示包含金屬柱46之晶圓10之一部分之一橫截面圖。如圖26中所展示，聚合物層30依小傾斜角γ'接合至金屬墊26。此可有助於釋放在平坦化期間施加於聚合物層30及金屬墊26上之應力，其歸因於消除金屬柱46之尖銳底角。因此，小傾斜角γ'有益於減少聚合物層30與金屬墊26之間的分層(其部分歸因於朝向墊26之中心之PI回銲之後之金屬墊26上方之聚合物層30之增加接觸/重疊)，因此提高接合界面處之結構整合度且減小分層之可能性。 金屬柱46包含比聚合物層30之頂面低的下部分46A及比聚合物層30之頂面高的上部分46B。下部分46A及上部分46B之厚度分別為T1及T2。根據一些實施例，厚度比T1/T2在約1.1至約1.4之範圍內。部分46B之側壁之傾斜角β可在約60度至約105度之範圍內，或在約70度至約90度之範圍內。 進一步參考圖26，側壁30'之彎曲部分可具有半徑R1，其中根據一些實施例，比率R1/T1可大於約0.2、大於約0.3或在約0.3至約0.5之範圍內，大半徑R1對在後續平坦化中釋放應力更有效，如後續段落中將討論。然而，半徑R1不能太大，此係因為增大值R1會導致金屬柱46與金屬墊26之間的接觸面積太小。 返回參考圖17，在平坦化之後，貫穿通路60可保持具有一沙漏計時器輪廓。貫穿通路60之若干輪廓可由先前程序步驟引起。根據本揭露之一些實施例，一貫穿通路60可包含頂部部分60A、中間部分60B及底部部分60C，其中頂部部分60A及底部部分60C可具有垂直側壁及均勻寬度(由虛線60'繪示)，而中間部分60B具有傾斜側壁及連續變化寬度(如圖中所繪示)。根據替代實施例，部分60A、60B及60C全部具有逐漸及連續變化之寬度，其中貫穿通路60之一中間部分係最窄的，且各自上部分變得越來越寬，且下部分亦變得越來越寬，如圖17中之實線所展示。 圖18至圖24繪示前側RDL及銲料區域之形成。各自步驟經繪示為圖27中所展示之程序流程中之步驟320。參考圖18，使用(例如)一光敏材料來形成聚合物層72。根據一些實施例，聚合物層72由聚醯亞胺形成。根據替代實施例，聚合物層72由諸如PBO之其他介電材料形成。開口74形成於聚合物層72中以暴露貫穿通路60及金屬柱46。 聚合物層72及開口74之形成包含：施配聚合物層72；預烘烤聚合物層72；對聚合物層72執行一曝光；及使經暴露之聚合物層72顯影。在顯影之後，烘烤聚合物層72。根據一些實施例，開口74比開口31 (圖2)窄。相應地，可期望由烘烤引起之聚合物層72之回銲效應不比聚合物層30顯著，使得開口74之寬度不用減小得與開口31之減小一樣多。否則，將填充開口74之重佈線(RDL)之間的接觸面積會被減小太多，且接觸電阻會太高。此外，由於不會在RDL之形成中執行CMP，所以不太需要減小應力，且傾斜角α1可大於傾斜角γ' (圖25)。 根據一些實施例，為限制聚合物層72之回銲，烘烤溫度(在顯影之後執行)較低，且比聚合物層30之烘烤溫度低。根據本揭露之一些實施例，聚合物層72之烘烤溫度在約225°C至約275°C之範圍內。聚合物層72之烘烤溫度亦可比聚合物層30之烘烤溫度低高於約100°C之一溫差，且溫差亦可在約120°C至約160°C之範圍內。烘烤週期可在約40分鐘至約80分鐘之範圍內。 根據一些實施例，聚合物層30及聚合物層72由一相同材料(例如聚醯亞胺)形成，且聚合物層30之烘烤溫度比聚合物層72之烘烤溫度高以誘發聚合物層30中比聚合物層72多之回銲。根據替代實施例，聚合物層30及聚合物層72由不同材料形成(例如，其中一者由聚醯亞胺形成且另一者由PBO形成)，且聚合物層30之烘烤溫度亦比聚合物層72之烘烤溫度高以誘發聚合物層30中比聚合物層72多之回銲。根據替代實施例，聚合物層30及聚合物層72由不同材料形成。例如，聚合物層30可由具有比聚合物層72低之一回銲溫度的一材料形成，因此，層30及72兩者可在一相同溫度(或具有小於約20°C之一溫差的近似溫度)處被執行，同時聚合物層30仍比聚合物層72回銲更多。 由於聚合物層72之較低烘烤溫度導致比聚合物層30小之回銲效應，所以在烘烤聚合物層72之後，聚合物層72之原先垂直側壁變得不如聚合物層30之側壁傾斜及圓化。根據本揭露之一些實施例，傾斜角α1大於角γ' (圖26)。差值(β-γ')可大於約30度，且可在約30度至約60度之範圍內。傾斜角α1可在約70度至約90度之範圍內。較低烘烤溫度亦有益於載體54 (其無法經受非常高溫度)。 接著，參考圖19，形成連接至金屬柱46及貫穿通路60之重佈線(RDL) 80。RDL 80亦可使金屬柱46與貫穿通路60互連。RDL 80包含位於聚合物層72上方之金屬跡線(金屬線)及延伸至開口74 (圖18)中以電連接至貫穿通路60及金屬柱46之通路。根據一些實施例，在一鍍覆程序中形成RDL 80，其中RDL 80之各者包含一晶種層(圖中未展示)及位於該晶種層上方之一鍍覆金屬材料。晶種層及鍍覆材料可由相同材料或不同材料形成。RDL 80可包含一金屬或一金屬合金，其包含鋁、銅、鎢及/或其等之合金。RDL 80由非銲接材料形成。RDL 80之通路部分可與金屬柱46及貫穿通路60之頂面實體接觸。根據一些實施例，厚度比T1/T3 (其中T1展示於圖26中)在約1.3至約1.6之範圍內，其中厚度T3係RDL 80之厚度。 參考圖20，在RDL 80及聚合物層72上方形成介電層82。可使用一聚合物來形成介電層82，該聚合物可選自相同於聚合物層72之候選材料的候選材料。例如，介電層82可包括聚醯亞胺、PBO、BCB或其類似者。亦在介電層82中形成開口84來暴露RDL 80。可透過一光微影程序執行開口84之形成。可使用類似於聚合物層72之烘烤的程序來烘烤聚合物層82，因此，聚合物層82之側壁之傾斜角α2可在相同於聚合物層72之傾斜角α1的範圍內。 圖21繪示RDL 86之形成，RDL 86電連接至RDL 80。RDL 86之形成可採用類似於用於形成RDL 80之方法及材料的方法及材料。由於RDL 86及80位於裝置晶粒12之前側上，所以其等亦指稱前側RDL。 如圖22中所展示，形成一額外介電層88 (其可為一聚合物層)以覆蓋RDL 86及介電層82。介電層88可選自用於形成介電層72及82之相同候選聚合物。接著，在介電層88中形成(若干)開口90來暴露RDL 86之金屬墊部分。根據一些實施例，在形成介電層88之前，可形成位於RDL 86上方且電耦合至RDL 86之一或複數個介電層及RDL層，且材料及方法可類似於下伏介電層及RDL之材料及方法。 圖23繪示根據一些例示性實施例之凸塊下金屬(UBM) 92及電連接器94之形成。UBM 92之形成可包含沈積及圖案化。電連接器94之形成可包含：將焊球放置於UBM 92之暴露部分上且接著回銲焊球。在替代實施例中，電連接器94之形成包含：執行一鍍覆步驟以在RDL 86上方形成銲料區域；及接著回銲銲料區域。電連接器94亦可包含亦可透過鍍覆形成之金屬柱或金屬柱及銲料帽。在整個描述中，包含裝置晶粒12、貫穿通路60、囊封材料70及對應RDL及介電層之組合結構將指稱封裝100，其可為具有一圓形俯視形狀之一複合晶圓。 接著，自載體54剝離封裝100。各自步驟經繪示為圖27中所展示之程序流程中之步驟322。亦自封裝100清除離型層56。可藉由將一光(諸如UV光或雷射)投射於離型層56上以使離型層56分解來執行剝離。 在剝離時，可將一膠帶(圖中未展示)黏著至介電層88及電連接器94上。在後續步驟中，自封裝100移除載體54及離型層56。執行一晶粒切割步驟以將封裝100切割成各包含裝置晶粒12及貫穿通路60之複數個封裝。所得封裝之一者在圖24中展示為封裝102。 圖24繪示封裝102與另一封裝200之接合。各自步驟經繪示為圖27中所展示之程序流程中之步驟324。根據本揭露之一些實施例，透過銲料區域98執行接合。根據一些實施例，封裝200包含裝置晶粒202，其可為記憶體晶粒，諸如靜態隨機存取記憶體(SRAM)晶粒、動態隨機存取記憶體(DRAM)晶粒或其類似者。在一些例示性實施例中，記憶體晶粒亦可接合至封裝基板204。 本揭露之實施例具有一些有利特徵。藉由使金屬柱之側壁之底部部分具有較小傾斜角來減小後續平坦化中所引起之應力且減少或消除分層。 根據本揭露之一些實施例，一種方法包含：形成一第一聚合物層以覆蓋一晶圓之一金屬墊；及圖案化該第一聚合物層以形成一第一開口。暴露於該第一開口之該第一聚合物層之一第一側壁具有一第一傾斜角，其中該第一側壁與該金屬墊接觸。該方法進一步包含：在該第一開口中形成一金屬柱；形成環繞及覆蓋該金屬柱之一介電層；切割該晶圓以產生一裝置晶粒；將該裝置晶粒囊封於一囊封材料中；執行一平坦化以顯露該金屬柱；在該囊封材料及該裝置晶粒上方形成一第二聚合物層；及圖案化該第二聚合物層以形成一第二開口。透過該第二開口暴露該金屬柱。暴露於該第二開口之該第二聚合物層之一第二側壁具有大於該第一傾斜角之一第二傾斜角。 根據本揭露之一些實施例，一種方法包含：形成一第一聚合物層以覆蓋一晶圓之一金屬墊；及圖案化該第一聚合物層以形成一第一開口，其中透過該第一開口暴露該金屬墊。該方法進一步包含：以一第一溫度烘烤該晶圓；在該第一開口中形成一金屬柱；形成環繞及覆蓋該金屬柱之一介電層；切割該晶圓以產生一裝置晶粒；將該裝置晶粒囊封於一囊封材料中；執行一平坦化以顯露該金屬柱；在該囊封材料及該裝置晶粒上方形成一第二聚合物層；及圖案化該第二聚合物層以形成一第二開口，其中透過該第二開口暴露該金屬柱。以比該第一溫度低之一第二溫度烘烤該第二聚合物層。形成具有填充該第二開口之一部分的一重佈線。 根據本揭露之一些實施例，一種封裝包含一裝置晶粒，其包含：一金屬墊；一第一聚合物層，其覆蓋該金屬墊之邊緣部分；及一金屬柱，其延伸至該第一聚合物層中以接觸該第一聚合物層之一第一側壁。該第一聚合物層之該第一側壁具有一第一傾斜角。該封裝進一步包含囊封該裝置晶粒之一囊封材料。該金屬柱之一頂面與該囊封材料之一頂面共面。一第二聚合物層位於該囊封材料及該裝置晶粒上方。一重佈線具有延伸至該第二聚合物層中以接觸該第二聚合物層之一第二側壁的一部分。該第二側壁具有大於該第一傾斜角之一第二傾斜角。 上文已概述若干實施例之特徵，使得熟習技術者可較佳理解本揭露之態樣。熟習技術者應瞭解，其可容易地使用本揭露作為設計或修改用於實施相同目的及/或達成本文所引入之實施例之相同優點之其他製程及結構的一基礎。熟習技術者亦應認識到，此等等效構造不應背離本揭露之精神及範疇，且其可在不背離本揭露之精神及範疇之情況下對本文作出各種改變、取代及更改。
10‧‧‧晶圓
12‧‧‧半導體晶片/裝置晶粒
14‧‧‧半導體基板
14A‧‧‧表面
16‧‧‧積體電路
17‧‧‧層間介電質(ILD)
18‧‧‧通路
20‧‧‧金屬線
22‧‧‧互連結構
24‧‧‧介電層
26‧‧‧金屬墊
28‧‧‧鈍化層
30‧‧‧聚合物層/聚合物
30'‧‧‧側壁
31‧‧‧開口
32‧‧‧微影遮罩
34‧‧‧光
36‧‧‧凸塊下金屬(UBM)層
37‧‧‧虛線
38‧‧‧光阻劑
40‧‧‧開口
42‧‧‧金屬區域
44‧‧‧銲料帽
46‧‧‧金屬柱
46A‧‧‧下部分
46B‧‧‧上部分
48‧‧‧探針
50‧‧‧探針卡
52‧‧‧聚合物層
54‧‧‧載體
56‧‧‧離型層
58‧‧‧介電層
60‧‧‧金屬柱/貫穿通路
60'‧‧‧虛線
60A‧‧‧頂部部分
60B‧‧‧中間部分
60C‧‧‧底部部分
62‧‧‧金屬晶種層
64‧‧‧光阻劑
66‧‧‧開口
68‧‧‧晶粒附著膜(DAF)
70‧‧‧囊封材料
72‧‧‧聚合物層/介電層
74‧‧‧開口
80‧‧‧重佈線(RDL)
82‧‧‧介電層/聚合物層
84‧‧‧開口
86‧‧‧重佈線(RDL)
88‧‧‧介電層
90‧‧‧開口
92‧‧‧凸塊下金屬(UBM)
94‧‧‧電連接器
98‧‧‧銲料區域
100‧‧‧封裝
102‧‧‧封裝
200‧‧‧封裝
202‧‧‧裝置晶粒
204‧‧‧封裝基板
300‧‧‧程序流程
302‧‧‧步驟
304‧‧‧步驟
306‧‧‧步驟
308‧‧‧步驟
310‧‧‧步驟
312‧‧‧步驟
313‧‧‧步驟
314‧‧‧步驟
316‧‧‧步驟
318‧‧‧步驟
320‧‧‧步驟
322‧‧‧步驟
324‧‧‧步驟
R1‧‧‧半徑
T1‧‧‧厚度
T2‧‧‧厚度
T3‧‧‧厚度
W1‧‧‧底部寬度/寬度
W2‧‧‧頂部寬度/寬度
W3‧‧‧中間寬度
α1‧‧‧傾斜角
α2‧‧‧傾斜角
β‧‧‧傾斜角
γ'‧‧‧傾斜角
自結合附圖來解讀之以下詳細描述最佳地理解本揭露之態樣。應注意，根據產業中之標準實踐，各種構件未按比例繪製。事實上，為使討論清楚，可任意增大或減小各種構件之尺寸。 圖1至圖24繪示根據一些實施例之形成封裝之中間階段之橫截面圖。 圖25及圖26分別繪示根據一些實施例之一裝置晶粒及一封裝之一些部分之橫截面圖。 圖27繪示根據一些實施例之一封裝程序之一程序流程。

Claims (20)

  1. 一種方法，其包括： 形成一第一聚合物層以覆蓋一晶圓之一金屬墊； 圖案化該第一聚合物層以形成一第一開口，其中透過該第一開口暴露該金屬墊，其中自該第一開口暴露之該第一聚合物層之一第一側壁界定投射於該金屬墊之一上表面上方之一第一傾斜角； 在該第一開口中形成一金屬柱； 形成環繞及覆蓋該金屬柱之一介電層； 切割該晶圓以產生一裝置晶粒； 將該裝置晶粒囊封於一囊封材料中； 執行一平坦化以顯露該金屬柱； 在該囊封材料及該裝置晶粒上方形成一第二聚合物層；及 圖案化該第二聚合物層以形成一第二開口，其中透過該第二開口暴露該金屬柱，其中暴露於該第二開口之該第二聚合物層之一第二側壁具有大於該第一傾斜角之一第二傾斜角。
  2. 如請求項1之方法，其中該圖案化該第一聚合物層包括使該第一聚合物層曝光及顯影且以一第一溫度烘烤該第一聚合物層，且該圖案化該第二聚合物層包括使該第二聚合物層曝光及顯影且以比該第一溫度低之一第二溫度烘烤該第二聚合物層。
  3. 如請求項2之方法，其中該第一溫度經選擇以導致該第一傾斜角介於約15度至約45度之間，且該第二溫度經選擇以導致該第二傾斜角介於約70度至約90度之間。
  4. 如請求項2之方法，其中該第一溫度比該第二溫度高約120度之一溫差。
  5. 如請求項1之方法，其中該第一聚合物層之該第一側壁之一下部分依一半徑彎曲，且該第一聚合物層中之該金屬柱之一部分具有一厚度，且其中該半徑與該厚度之一比率大於約0.2。
  6. 如請求項1之方法，其進一步包括：形成一金屬柱，其中該金屬柱被囊封於該囊封材料中，且該金屬柱具有一沙漏計時器輪廓。
  7. 如請求項1之方法，其進一步包括： 將一銲料層鍍覆於該金屬柱上方且接觸該金屬柱；及 在該平坦化中移除該銲料層，其中在該鍍覆該銲料層與該移除該銲料層之間，不回銲該銲料層。
  8. 一種方法，其包括： 形成一第一聚合物層以覆蓋一晶圓之一金屬墊； 圖案化該第一聚合物層以形成一第一開口，其中透過該第一開口暴露該金屬墊； 以一第一溫度烘烤該晶圓； 在該第一開口中形成一金屬柱； 形成環繞及覆蓋該金屬柱之一介電層； 切割該晶圓以產生一裝置晶粒； 將該裝置晶粒囊封於一囊封材料中； 執行一平坦化以顯露該金屬柱； 在該囊封材料及該裝置晶粒上方形成一第二聚合物層； 圖案化該第二聚合物層以形成一第二開口，其中透過該第二開口暴露該金屬柱； 以比該第一溫度低之一第二溫度烘烤該第二聚合物層；及 形成具有填充該第二開口之一部分的一重佈線。
  9. 如請求項8之方法，其中暴露於該第一開口之該第一聚合物層之一第一側壁具有一第一傾斜角，在該第一傾斜角相鄰處，該第一側壁與該金屬墊接觸，且暴露於該第二開口之該第二聚合物層之一第二側壁具有大於該第一傾斜角之一第二傾斜角。
  10. 如請求項9之方法，其中該第一溫度經選擇以導致該第一傾斜角介於約15度至約45度之間，且該第二溫度經選擇以導致該第二傾斜角介於約70度至約90度之間。
  11. 如請求項9之方法，其中以該第一溫度烘烤該晶圓之後，使該第一聚合物層之該第一側壁之一下部分依一半徑彎曲，且該第一聚合物層中之該金屬柱之一部分具有一厚度，且該半徑與該厚度之一比率大於約0.2。
  12. 如請求項8之方法，其中該圖案化該第一聚合物層包括在烘烤該第一聚合物之前使該第一聚合物層曝光及顯影，且該圖案化該第二聚合物層包括在烘烤該第二聚合物層之前使該第二聚合物層曝光及顯影。
  13. 如請求項8之方法，其中該第一溫度比該第二溫度高約120度至約160度之一範圍內的一溫差。
  14. 如請求項8之方法，其中該第一聚合物層及該第二聚合物層由一相同聚合物材料形成。
  15. 如請求項8之方法，其中該第一聚合物層及該第二聚合物層由不同聚合物材料形成。
  16. 一種封裝，其包括： 一裝置晶粒，其包括： 一金屬墊； 一第一聚合物層，其覆蓋該金屬墊之邊緣部分；及 一金屬柱，其延伸至該第一聚合物層中以接觸該第一聚合物層之一第一側壁，其中該第一聚合物層之該第一側壁界定相對於該金屬墊之一上表面之一第一傾斜角； 一囊封材料，其囊封該裝置晶粒，其中該金屬柱之一頂面與該囊封材料之一頂面共面； 一第二聚合物層，其位於該囊封材料及該裝置晶粒上方；及 一重佈線，其具有延伸至該第二聚合物層中以接觸該第二聚合物層之一第二側壁的一部分，其中該第二側壁具有大於該第一傾斜角之一第二傾斜角。
  17. 如請求項16之封裝，其中該第一傾斜角在約15度至約45度之一範圍內。
  18. 如請求項16之封裝，其中該第一聚合物層之該第一側壁之一下部分依一半徑彎曲，且該第一聚合物層中之該金屬柱之一部分具有一厚度，且該半徑與該厚度之一比率大於約0.2。
  19. 如請求項16之封裝，其中該第一聚合物層及該第二聚合物層由一相同聚合物材料形成。
  20. 如請求項16之封裝，其中該第一聚合物層及該第二聚合物層由不同聚合物材料形成。
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