TW201810603A - 高亮度絢白光發光二極體光源 - Google Patents

高亮度絢白光發光二極體光源 Download PDF

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TW201810603A
TW201810603A TW106113859A TW106113859A TW201810603A TW 201810603 A TW201810603 A TW 201810603A TW 106113859 A TW106113859 A TW 106113859A TW 106113859 A TW106113859 A TW 106113859A TW 201810603 A TW201810603 A TW 201810603A
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漢斯－黑爾莫特 貝屈特爾
艾瑞克 羅林
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露明控股公司
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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Abstract

本發明係關於一種發光二極體或裝置(LED)封裝，其包含一基板；一白光LED，其在該基板上方；及一紫光LED或雷射，其在該白光LED之一波長轉換器上方或自該波長轉換器側向偏移。

Description

高亮度絢白光發光二極體光源
本發明係關於半導體發光二極體或裝置(LED)，且更特定言之係關於LED燈。
當藉由日光照明時，未處理白色物品(諸如由天然纖維製成之織物)傾向於對肉眼表現為黃色或象牙色。此等纖維吸收入射白光之藍光內容，其導致表現為淺黃色之一反射光。 設計者將螢光增白劑(FWA)併入染料、墨水及甚至洗衣洗滌劑以使織物變亮。此等試劑吸收具有在近紫外、紫光及深藍光光譜中之波長之光子，人眼難以看見該等光子。經吸收光子之能量由織物以具有更長波長(通常在藍光光譜中)之光子之形式再發射。藉由將FWA併入織物中，設計者可補償來自白色織物之反射光中之藍光光譜內容之天然缺陷。 傳統白光發光二極體或裝置(LED)從覆蓋有發黃光磷光體之發藍光LED產生白光。此等白光LED不具有在近紫外、紫光及深藍光光譜中之足夠光譜內容來活化白色物件中之FWA。 US 2015/0049459揭示一種發光模組，其具有：一第一發光元件，其具有在400 nm至440 nm之波長範圍中之一發射峰值；及一第二發光元件，其具有在440 nm至460 nm之波長範圍中之一發射峰值。該第一發光元件及該第二發光元件位於一波長轉換元件下方。該波長轉換元件經配置以從該第一發光元件接收光且能夠發射具有在綠光波長範圍至紅光波長範圍中之一發射峰值之光。該模組提供具有一「絢白光」效應之白光。
本發明之一或多個實例，一種發光二極體或裝置(LED)封裝包含：一基板；一白光LED，其在該基板上方；及一紫光LED，其在該白光LED之一波長轉換器上方或在該波長轉換器上方側向偏移。
圖1展示一白光發光二極體或裝置(LED)封裝之發射光譜。如可見，低於430奈米(nm)之光譜內容非常低。根據以下公式計算此波長範圍中之光譜內容之一量度，其被稱為「白度W」。表1提供圖1中展示之發射光譜之效能資料。 表1 來自加利福尼亞州聖荷西的Lumileds之結合絢白光技術之LUXEON板上晶片(CoB)經設計以提供深藍光光譜中之更多光以活化發現於幾乎所有服裝、織物及塗料中之螢光增白劑。如同傳統白光LED，結合絢白光技術之LUXEON CoB依賴於具有455 nm之一典型峰值波長之藍光LED並使該等藍光LED塗佈磷光體以發射黃-綠光及紅光波長。藍光、黃-綠光及紅光之組合形成所需白光。 為激活FWA，結合絢白光技術之LUXEON CoB包含發射具有小於430 nm之一較低峰值波長之紫光之一些晶粒，且用磷光體覆蓋藍光LED及紫光LED兩者。第二峰值係介於400 nm與415 nm之間之深藍光。此波長足夠短以刺激FWA同時朝向人眼之波長靈敏度曲線之邊緣足夠遠使得其對尚未用FWA處理之物品之感知光具有較小影響。 將藍光LED及紫光LED兩者放置於磷光體下方之一LED封裝具有其白光通量因通量及亮度受藍光LED之大小(通常佔據整個發射區域)限制而減小之劣勢。紫光LED無貢獻，此係因為磷光體幾乎不吸收具有小於430 nm之波長之光且人眼對於具有小於430 nm之波長之光的靈敏度低。圖2展示釔鋁石榴石(YAG)磷光體之吸收光譜及人眼靈敏度曲線。 在本發明之實例中，一LED封裝包含：一藍光LED；一波長轉換器，其在該藍光LED上方；及一紫光LED，其在該波長轉換器上方或自該波長轉換器側向位移。圖3係展示本發明之實例中具有一紫光LED之此一LED封裝之發射光譜，該紫光LED在(例如) 405 nm下具有峰值發射。 表2提供圖3中展示之發射光譜之效能資料。 表2 比較表1及表2中之兩個發射光譜之資料展示色點移位極小，白度W自0.13增加至2.49，且發射通量保持實質上恆定。 圖4繪示本發明之實例中之一LED封裝400。封裝400包含一基板402、基板402上方之一發白光LED 404及白光LED 404上方之一發紫光LED 406。如本文中使用，「上方」包含一元件直接安裝於另一元件上。 基板402可為一子基板或一電路板。 發白光LED 404具有大於430 nm(諸如介於430 nm與480 nm之間(例如，455 nm))之一峰值波長。發白光LED 404包含一發藍光LED晶粒408及藍光LED晶粒408上方之一波長轉換器410。發藍光LED晶粒408可為形成於一圖案化藍寶石基板(PSS)上之一垂直或一薄膜覆晶(TFFC)晶粒。 發紫光LED 406位於波長轉換器410上方。發紫光LED 406將紫光發射至波長轉換器410上，該波長轉換器410散射並發射具有白光之紫光。在一些情況中，波長轉換器410可包含吸收部分紫光並發射一紅光之磷光體(例如，紅光磷光體)。發紫光LED 406具有小於430 nm(諸如介於400 nm與415 nm之間(例如，405 nm))之一峰值波長。發紫光LED 406對由發白光LED 404發射之光透明。紫光LED 406可為一側向晶粒，該側向晶粒具有晶粒之一頂側上之電接觸件，該等電接觸件可(例如，藉由接合導線)電連接至基板402中之接觸件。 波長轉換器410包含黃-綠光磷光體、紅光磷光體或黃-綠光磷光體與紅光磷光體之一組合。波長轉換器410可為一YAG陶瓷磷光體板，諸如來自加利福尼亞州聖荷西的Lumileds之Lumiramic。 為增加亮度，封裝400可包含發白光LED 404之側向表面上(即，發藍光LED晶粒408及波長轉換器410之側向表面上)之一反射側塗層412。 圖5繪示本發明之實例中之一LED封裝500。封裝500包含基板402、基板402上方之發白光LED 404及一發紫光LED 502及一光學件504。 發紫光LED 502自發白光LED 404之波長轉換器410側向偏移。紫光LED 502對由發白光LED 404發射之光透明。紫光LED 502可為一側向晶粒，該側向晶粒具有晶粒之一頂側上之電接觸件。 光學件504使來自紫光LED 502之紫光成像至波長轉換器410上。光學件504可為一成像鏡。 波長轉換器410包含黃-綠光磷光體、紅光磷光體或黃-綠光磷光體與紅光磷光體之一組合。波長轉換器410可為混合至一聚矽氧基質材料中之YAG磷光體。 封裝500可包含發白光LED 404之側向表面上(即，發藍光LED晶粒408及波長轉換器410之側向表面上)之反射側塗層412。 圖6繪示本發明之實例中之一LED封裝600。封裝600包含基板402、基板402上方之發白光LED 404、一發紫光LED 602及一二向色組合器604。 發紫光LED 602自發白光LED 404之波長轉換器410側向偏移。發紫光LED 602緊靠發白光LED 404安裝於基板402上方。在一些實例中，二向色組合器604可為一二向色板或鏡，其經安裝與發白光LED 404之水平發射表面及發紫光LED 602之垂直發射表面成一角度(例如，45度)以組合其等之光。在其他實例中，二向色組合器604可為一二向色立方體，其具有分別面向發白光LED 404及發紫光LED 702之發射表面之底部及側向表面。 封裝600可包含發白光LED 404之側向表面上(即，發藍光LED晶粒408及波長轉換器410之側向表面上)之反射側塗層412。 圖7繪示本發明之實例中之一LED封裝700。封裝700包含基板402、基板402上方之發白光LED 404、一發紫光雷射702、一光導704及一聚焦透鏡706。 發紫光雷射702耦合至光導704之一個末端，且聚焦透鏡706耦合至光導704之另一末端。發紫光雷射702將紫光發射至光導704中，該紫光由聚焦透鏡706引導至白光LED 404之波長轉換器410上。波長轉換器410散射並發射具有白光之紫光。 封裝700可包含發白光LED 404之側向表面上(即，發藍光LED晶粒408及波長轉換器410之側向表面上)之反射側塗層412。 圖8繪示本發明之實例中之一LED封裝800。封裝800包含基板402、基板402上方之發白光LED 404、一發紫光LED 802及一聚焦透鏡804。 發紫光LED 802緊靠發白光LED 404安裝於基板402上方。發紫光LED 802可經安裝成一角度，因此其發射表面經引導朝向白光LED 404之發射表面。聚焦透鏡804安裝至發紫光LED 802之發射表面。發紫光LED 802發射紫光，該紫光由聚焦透鏡804引導至白光LED 404之波長轉換器410上。波長轉換器410散射並發射具有白光之紫光。 封裝800可包含發白光LED 404之側向表面上(即，發藍光LED晶粒408及波長轉換器410之側向表面上)之反射側塗層412。 所揭示實施例之特徵之各種其他調適及組合係在本發明之範疇內。許多實施例被以下發明申請專利範圍所涵蓋。
400‧‧‧LED封裝/封裝
402‧‧‧基板
404‧‧‧發白光LED/白光LED
406‧‧‧發紫光LED/紫光LED
408‧‧‧發藍光LED晶粒/藍光LED晶粒
410‧‧‧波長轉換器
412‧‧‧反射側塗層
500‧‧‧LED封裝/封裝
502‧‧‧發紫光LED/紫光LED
504‧‧‧光學件
600‧‧‧LED封裝/封裝
602‧‧‧發紫光LED
604‧‧‧二向色組合器
700‧‧‧LED封裝/封裝
702‧‧‧發紫光LED/發紫光雷射
704‧‧‧光導
706‧‧‧聚焦透鏡
800‧‧‧LED封裝/封裝
802‧‧‧發紫光LED
804‧‧‧聚焦透鏡
在圖中： 圖1展示一白光發光二極體或裝置(LED)封裝之發射光譜。 圖2展示釔鋁石榴石(YAG)磷光體之吸收光譜及人眼靈敏度曲線。 圖3展示本發明之實例中之具有一紫光LED之此一LED封裝之發射光譜。 圖4、圖5、圖6、圖7及圖8繪示本發明之實例中之LED封裝。 在不同圖式中使用相同元件符號指示類似或相同元件。

Claims (15)

  1. 一種發光二極體或裝置(LED)封裝，其包括： 一基板； 一白光LED，其在該基板上方，該白光LED包括一波長轉換器； 及 一紫光LED或雷射， 其中該紫光LED或雷射位於該波長裝換器上方或在該波長轉換器上方側向偏移。
  2. 如請求項1之封裝，其中： 該白光LED進一步包括安裝於該基板上之一藍光LED晶粒； 該波長轉換器安裝於該藍光LED晶粒上；且 該紫光LED安裝於該波長轉換器上。
  3. 如請求項2之封裝，其中該紫光LED包括一側向晶粒，該側向晶粒具有在該晶粒之一頂側上之電接觸件。
  4. 如請求項3之封裝，其中該波長轉換器包括一陶瓷磷光體。
  5. 如請求項4之封裝，其進一步包括在該藍光LED及該波長轉換器之側向表面上之一反射側塗層。
  6. 如請求項1之封裝，其進一步包括用以將來自該紫光LED之光引導至該波長轉換器上之一光學件，其中該光學件包括安裝於該紫光LED或鏡之一發射表面上之一聚焦透鏡。
  7. 如請求項1之封裝，其進一步包括組合來自該紫光LED及該白光LED之光之一二向色組合器，其中該二向色組合器包括： 一板，其經安裝成相對於該白光LED及該紫光LED之發射表面之一角度；或 一二向色立方體，其有分別面向該白光LED及該紫光LED之該等發射表面之底部及側向表面。
  8. 如請求項1之封裝，其進一步包括一光導及一聚焦透鏡，其中： 該紫光雷射安裝至該光導之一第一末端； 該聚焦透鏡安裝至該光導之一第二末端；且 該聚焦透鏡將來自該紫光雷射之光引導至該波長轉換器上。
  9. 一種用於使一發光二極體或裝置(LED)封裝產生光之方法，其包括： 用一白光LED產生一白光，該白光LED包含一波長轉換器；及 用一紫光LED或雷射產生一紫光， 其中該紫光LED或雷射位於該波長裝換器上方或在該波長轉換器上方側向偏移。
  10. 如請求項9之方法，其中： 該白光LED進一步包括安裝於該基板上之一藍光LED晶粒； 該波長轉換器安裝於該藍光LED晶粒上；且 該紫光LED安裝於該波長轉換器上。
  11. 如請求項10之方法，其中該紫光LED對由該白光LED發射之光透明。
  12. 如請求項11之方法，其中該紫光LED包括一側向晶粒，該側向晶粒具有在該晶粒之一頂側上之電接觸件。
  13. 如請求項12之方法，其中該波長轉換器包括一陶瓷磷光體。
  14. 如請求項13之方法，其進一步包括在該藍光LED及該波長轉換器之具有一反射側塗層之側向表面上反射光。
  15. 如請求項11之方法，其進一步包括將來自該紫光LED之光引導至該波長裝換器上或用一二向色板或立方體組合由該白光LED及該紫光LED發射之光。
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