TW201803061A - Lead frame - Google Patents

Abstract

Provided is a lead frame including: a plurality of unit lead frames; and a connecting bar for linking the unit lead frames with each other. Each of the unit lead frames includes a die pad, a plurality of leads, and a linking portion for linking tip end portions of adjacent leads of the plurality of leads with each other, and the unit lead frames are arrayed in matrix; the connecting bar includes a lead support bar for supporting base end portions of the leads; and a region in the lead support bar, the region facing the linking portion, is cut out in a direction away from the linking portion.

Description

Lead frame

The present invention relates to a lead frame.

There is known a technique in which a connection portion is provided in a lead frame of a type of Molded Array Package (MAP: Molded Array Package), which connects a tip end portion of two or more adjacent leads in a lead wire The lead wires are electrically connected to each other, and the lead wires have a base end portion connected to the connecting rod (for example, refer to Japanese Laid-Open Patent Publication No. 2005-26466).

The lead frame of the embodiment of the present application includes: a plurality of unit lead frames; and a connecting rod that connects the unit lead frames to each other, the unit lead frame having a wafer holder, a plurality of leads, and a tip end portion of the adjacent lead wires Connecting portions connected to each other, and the unit lead frames are arranged in a matrix, the connecting rod including a lead supporting rod for supporting a base end portion of the lead, the lead supporting rod being opposed to the connecting portion The area is oriented in a direction away from the joint.

In the following detailed description, for the purposes of illustration However, it is apparent that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically illustrated for the purpose of simplifying the drawing.

However, as the size of the wafer of the semiconductor wafer mounted on the wafer pad becomes larger, the size of the wafer holder also increases. Therefore, the interval between the connecting rod and the joint portion is narrowed. Moreover, there is a limit to the accuracy of the etching process. Thus, if the interval between the connecting rod and the connecting portion is too narrow, a part of the connecting portion is also melted. As a result, it may be difficult to form the joint portion to a desired size.

One embodiment of the present embodiment has been completed in view of the above problems. That is, an object of the present invention is to provide a lead frame capable of accurately forming a connecting portion for connecting the tip end portions of the lead wires to each other to electrically connect the lead wires.

A lead frame of one embodiment of the present embodiment includes a plurality of unit lead frames and a connecting rod. The unit lead frame has a wafer holder, a plurality of leads, and a connecting portion that connects the distal end portions of the adjacent leads. Moreover, the plurality of unit lead frames are arranged in a matrix. The connecting rod connects the unit lead frames to each other. Further, the connecting rod includes a lead support rod that supports a base end portion of the lead. Further, a region of the lead support bar that faces the coupling portion is cut toward a direction away from the coupling portion.

According to one aspect of the present embodiment, it is possible to provide a lead frame in which a connecting portion is formed with high precision, and the connecting portion is used to connect the lead portions of the lead wires to each other to electrically connect the lead wires.

Embodiments of the lead frame disclosed in the present application will be described below with reference to the drawings. Further, the present invention is not limited by the embodiments disclosed below.

First, an outline of a lead frame of an embodiment will be described with reference to Fig. 1 . The lead frame 1 shown in FIG. 1 is a MAP type lead frame used in the manufacture of a Small Outline Non-leaded Package (SON) type semiconductor device.

The lead frame used in the manufacture of the SON type semiconductor device will be described below as an embodiment. However, the lead frame of the present embodiment can also be applied to a lead frame used in the manufacture of other types of semiconductor devices, such as those used in the manufacture of Quad Flat Non-leaded Package (QFN) type semiconductor devices. Lead frame.

The lead frame 1 includes a frame 16 that is rectangular in plan view. In the above-described housing 16, a plurality of unit lead frames 10 are arranged in a matrix. Further, a plurality of connecting rods 15 are arranged in a lattice shape around the unit lead frame 10. Both ends of the plurality of connecting rods 15 are respectively supported by the frame body 16.

The unit lead frame 10 includes a wafer holder 11, a plurality of leads 12, and a joint portion 13. Further, the plurality of connecting rods 15 include lead support bars 15a that support the base end portions 12b of the plurality of leads 12. Further, the connecting rod 15 may also include a wafer holder supporting rod 15b that supports the wafer holder 11 by the support rod 14. Further, the lead support bar 15a includes a first region 15c and a second region 15d. The first region 15c is sandwiched between adjacent lead base end portions 12b and opposed to the joint portion 13. On the other hand, the second region 15d is sandwiched between the adjacent lead base end portions 12b, but does not face the connecting portion 13. The second region 15d may also face the wafer holder 11.

The wafer holder 11 is formed in a rectangular shape in plan view and is disposed at a central portion of the unit lead frame 10. A semiconductor wafer (not shown) can be mounted on the surface side of the wafer holder 11.

A plurality of leads 12 are arranged between the wafer holder 11 and the lead support bars 15a. Further, the distal end portions 12a of the plurality of lead wires 12 extend from the lead support rod 15a toward the wafer holder 11. The lead wire 12 is electrically connected to an electrode of a semiconductor wafer disposed on the wafer holder 11 by a bonding wire or the like. Thereby, the lead 12 functions as an external terminal of the semiconductor device.

The connecting portion 13 connects the distal end portions 12a of the adjacent leads 12, thereby electrically connecting the adjacent leads 12 to each other. Similarly to the lead 12, the connecting portion 13 can be used as a region electrically connected to the electrode of the semiconductor wafer disposed on the wafer holder 11 by a bonding wire or the like.

When the interval between the connecting portion 13 and the lead supporting rod 15a is too narrow, a part of the connecting portion 13 is also melted due to the accuracy of etching processing or the like. As a result, it may be difficult to form the joint portion 13 to a desired size.

Therefore, in the lead frame 1 of the present embodiment, the first region 15c is notched in a direction away from the coupling portion 13. In other words, the first region 15c is recessed in a direction away from the joint portion 13. In other words, at least a part of the end surface of the first region 15c opposed to the joint portion 13 is a non-formed portion.

Thereby, the interval between the connection portion 13 and the first region 15c can be expanded to an interval that does not cause a problem in the accuracy of the etching process. In this way, the joint portion 13 can be formed with high precision so as to have a size that can be joined to, for example, a bonding wire. Therefore, it is possible to suppress the bonding wire from being not joined to the connecting portion 13.

Here, the interval between the connecting portion 13 and the first region 15c is preferably 90% or more of the thickness of the thickest portion of the lead frame 1. Thereby, it is possible to suppress a part of the connection portion 13 from being melted during the etching process (so-called over-etching). Further, the joint region of the joint portion 13 that is joined to the joint wire can be secured. In addition, the term "interval" as used herein means the distance between the end surface of the first region 15c facing the connecting portion 13 and the end surface of the connecting portion 13 facing the end surface of the first region 15c.

Further, in the lead frame 1 shown in FIG. 1, the connecting portion 13 is formed to extend substantially in parallel with the lead support rod 15a. Further, a part of the first region 15c is notched so as to be substantially constant from the space between the joint portions 13. However, the form of the slit is not limited to the above example.

For example, the central portion of the first region 15c in the extending direction of the lead support rod 15a (hereinafter referred to as the central portion of the first region 15c) may be a wedge or a circle that is cut deeper than the other portions in the direction away from the connecting portion 13. Arc shape.

Further, a part of the first region 15c may be cut so as to divide the lead support rod 15a. For example, in the lead frame 1A shown in FIG. 2, both end portions of the first region 15c are partially cut away from the connecting portion 13. Further, the central portion of the first region 15c is completely cut so as to divide the lead support rod 15a.

Thereby, the connection portion 13 can be further brought closer to at least the central portion of the first region 15c. Therefore, the width of the joint portion 13 can be enlarged accordingly. For example, by forming the central portion of the connecting portion 13 in a convex shape, the width of a part of the connecting portion 13 can be increased.

Further, as shown in the lead frame 1B shown in FIG. 3, the entire first region 15c may be cut so as to divide the lead support rod 15a. Thereby, the connection portion 13 can be extended in the direction of the lead support rod 15a. Therefore, the width of the joint portion 13 can be enlarged as a whole.

Further, the interval between the connecting portion 13 and the lead support rod 15a can be minimized. Accordingly, the size of the wafer holder 11 can be increased accordingly.

Further, all the leads 12 are supported by the connecting portion 13. Thereby, even if the lead support rod 15a is divided, the lead 12 does not fall off from the lead frame 1A or the lead frame 1B.

Here, returning to the description of FIG. 1, the structure of the lead frame 1 will be described in further detail. The etching process of the lead frame 1 will first be described below. The structure of the lead support rod 15a will then be further described.

The lead frame 1 of the embodiment is formed by etching a metal plate such as copper, a copper alloy or an iron-nickel alloy. The etching process includes, for example, a full etching process in which an opening is formed by etching on both sides, and a half etching process in which the thickness is reduced only by etching the back side.

Hereinafter, a portion where the half etching process is performed will be referred to as a "half-etched portion". A portion where the etching process is not performed and the thickness is the same as the thickness of the metal plate before the etching process is referred to as an "all metal portion". Further, in the enlarged plan view of the specification of the present application, for the sake of easy understanding, the "half-etched portion" in the "all metal portion" and the "half-etched portion" is shaded.

As shown in Fig. 1, the connecting rods 15 including the lead supporting bars 15a are all constituted by half-etched portions. The circumferential edge portion of the distal end portion 12a of the lead 12 is composed of a half-etched portion. The other parts are composed of all metal parts. The connecting portion 13 is entirely composed of a half-etched portion.

Therefore, the connection portion 13 and the lead support rod 15a opposed to the connection portion 13 are coupled by the all-metal portion provided in the lead wire 12. Therefore, the connecting portion 13 and the lead support rod 15a are firmly coupled. As a result, the strength of the lead wire supporting rod 15a which is reduced in strength due to the formation of the slit in the first region 15c can be increased by the joint portion 13. Thereby, deformation of the lead frame 1 in the short-side direction can be suppressed.

Further, the first region 15c of the lead support rod 15a shown in Figs. 2 and 3 is slit so as to divide the lead support rod 15a. In this case, the strength of the lead support rod 15a can be increased by expanding the width of the connecting portion 13 to be the same as the width of the lead support rod 15a or the width of the lead support rod 15a.

Further, in the present embodiment, the lead support bars 15a are arranged in the short-side direction of the lead frame 1, and further, the wafer holder support bars 15b are arranged in the longitudinal direction of the lead frame 1. However, the lead support bars 15a may be arranged in the longitudinal direction of the lead frame 1, and the wafer holder support bars 15b may be arranged in the short side direction.

By arranging the wafer holder support bars 15b in which no slits are formed in any of the regions in the short-side direction, the strength of the lead frame 1 in the short-side direction can be made higher than that in the longitudinal direction.

Further, it is also considered that the strength of the lead frame 1 in the longitudinal direction is lowered by arranging the lead support bars 15a having the first region 15c forming the slit. In this case, for example, by supporting both end portions of the lead frame 1 in the short-side direction, it is possible to suppress deformation (for example, deflection) of the lead frame 1 in the longitudinal direction during conveyance.

Further, in the present embodiment, the lead frame 1 used in the manufacture of the SON type semiconductor device is exemplified. Thereby, the lead support bars 15a are arranged only in the short side direction (or the longitudinal direction) of the lead frame 1.

However, for example, in the case of a lead frame used in the manufacture of a semiconductor device such as a QFN type, the lead support bars 15a are arranged in any of the longitudinal direction and the short-side direction of the lead frame.

Next, FIGS. 4 to 8 show various ways of increasing the strength of the lead support rod 15a itself. As an example of the above aspect, at least one portion of the lead support rod 15a is constituted by an all-metal portion. In the lead frame 1C shown in FIG. 4, the second region 15d is composed of an all-metal portion.

Thereby, the strength of the entire lead support rod 15a can be improved by using the all-metal portion having a higher strength than the half-etched portion. Therefore, deformation of the lead frame 1C in the short-side direction can be suppressed.

Furthermore, a second region 15d composed of an all-metal portion and a modification thereof will be described with reference to Fig. 5 . In addition, in (b) of FIG. 5 and (c) of FIG. 5, for the sake of easy understanding, a portion corresponding to the contour of the cross section shown in (a) of FIG. 5 is indicated by a broken line.

As shown in FIG. 5(a), the second region 15d has a rectangular shape as viewed in cross section, and is entirely composed of an all-metal portion. With the above configuration, the lead frame 1C can be formed of a metal plate having a predetermined plate thickness (see FIG. 4). Further, when the width W1 is set to a predetermined value, the cross-sectional area of the second region 15d can be maximized. Therefore, the strength of the second region 15d can be maximized.

On the other hand, the structure of the second region 15d is not limited to the structure shown in (a) of Fig. 5 . For example, as shown in FIG. 5( b ), the etching portion 17 a subjected to the half etching process may be formed on the back surface side of the side portion. Further, as shown in FIG. 5( c ), the etching portion 17 b subjected to the etching process can be formed so that the side surface has a shape that expands upward.

Further, the etching portions 17a and 17b can be formed by the same etching procedure as the half etching portion provided in the lead 12 or the connecting portion 13 or the like.

Here, in any of the modifications, the cross section is an inverted trapezoid, and the central portion is composed of an all metal portion. Therefore, the strength of the second region 15d can be secured by the above-described all-metal portion.

Further, in any of the modifications, since the side portions are etched, the cross-sectional area of the metal portion cut off when the dicing is performed along the connecting rod 15 after the integral resin encapsulation in the manufacturing process of the semiconductor device is small. Therefore, it is possible to suppress the abrasion of the rotary blade at the time of cutting.

In other words, in any of the modifications, the strength of the second region 15d and the life of the rotary blade can be balanced.

As another way of increasing the strength of the lead support rod 15a, FIG. 6 shows a structure in which the first region 15c of the lead support rod 15a of the lead frame 1D is an all-metal portion.

Thereby, by using the all-metal portion, the strength of the first region 15c which is slightly lowered in strength due to the slit can be directly increased. Thereby, deformation of the lead frame 1D in the short-side direction can be effectively suppressed.

As another aspect, in the lead frame 1E shown in FIG. 7, the first region 15c of the slit protrudes in a direction away from the coupling portion 13. That is, in the case of being compared with the lead frame 1 shown in FIG. 1, the width of the lead support rod 15a in the first region 15c is widened.

Thereby, the intensity of the first region 15c which is slightly lowered can be directly improved. Thereby, deformation of the lead frame 1E in the short-side direction can be effectively suppressed.

Further, even when the width of the lead wire supporting rod 15a in the first region 15c is increased as described above, the first region 15c can be disposed so as not to exceed the cutting line DL which is a portion which is cut at the time of cutting. Thereby, it is possible to suppress occurrence of burrs on the cut surface at the time of cutting due to the above-described excess portion.

Further, the width of the lead supporting bar 15a in the first region 15c of the lead frame 1E may be narrower than the width of the lead supporting bar 15a in the second region 15d, or may be the same width or may be wider. The width of the lead support rod 15a in the first region 15c may be a width that does not exceed the cutting line DL.

Alternatively, in the lead frame 1F shown in Fig. 8, the first region 15c is entirely cut so as to divide the lead support rod 15a, and further, the lead support rod 15a adjacent to the first region 15c of the slit is completely covered. The metal part is composed. In other words, the portion of the lead support rod 15a for supporting the base end portion 12b of the lead 12 connected to the joint portion 13 is composed of an all-metal portion.

Thereby, by using the all-metal portion, the portion of the lead support rod 15a which is slightly lower in strength due to the first region 15c of the entire slit can directly increase the strength. Therefore, deformation of the lead frame 1F in the short-side direction can be suppressed.

Next, still another modification of the embodiment will be described with reference to Figs. 9 and 10 . In the lead frame 1G shown in FIG. 9, the first region 15c is notched toward the direction away from the joint portion 13, but is also cut toward the direction close to the joint portion 13. That is, in the case of comparison with the lead frame 1 shown in FIG. 1, the width of the lead support rod 15a in the first region 15c is narrowed.

Thereby, the cross-sectional area of the metal portion of the first region 15c can be reduced. Thereby, the abrasion of the rotating blade at the time of cutting can be suppressed. Therefore, the life of the rotary blade can be extended.

In the lead frame 1H shown in FIG. 10, the distal end portion 12a of one lead 12 and the distal end portion 12a of the lead 12 adjacent to both sides of the lead 12 are connected to the connecting portion 13, respectively. In other words, the distal end portions 12a of the three lead wires 12 arranged side by side are integrally coupled by the two connecting portions 13.

Thereby, the distal end portion 12a and the connecting portion 13 of the large-sized lead wire 12 that are integrally connected can be connected to a large number of bonding wires.

In addition, an example in which the three lead wires 12 are integrally coupled is shown in FIG. However, the number of the leads 12 that can be integrally connected is not limited to three. For example, in the lead frame 1H, four or more leads 12 may be integrally connected.

Finally, features other than the above described embodiments will be described. In the lead frame 1 or the like, the width of the first region 15c is narrower than the width of the second region 15d. Thereby, the lead support rod 15a can be disposed and held as a whole within a predetermined region.

Thereby, when cutting along the extending direction of the connecting rod 15, it is possible to suppress the lead wire supporting rod 15a from exceeding the cutting line DL (refer to FIG. 7). Therefore, it is possible to suppress the occurrence of burrs on the cut surface at the time of cutting due to the above-mentioned excess portion.

Further, the connection portion 13 of the lead frame 1 or the like is constituted by a half-etched portion, and a predetermined interval is provided between the connection portion 13 and the first region of the lead support rod 15a. Here, at the time of the integral resin package in the manufacturing process of the semiconductor device, the encapsulating resin flows in from the space toward the back side of the etched connecting portion 13 . Thereby, the connection portion 13 is not exposed from the sealing resin of the semiconductor device, and can be completely encapsulated.

When the connection portion 13 is exposed from the sealing resin, moisture or the like that enters from the inside of the semiconductor device between the exposed portion and the sealing resin may adversely affect the reliability of the semiconductor device. However, with the above configuration, it is possible to suppress entry of moisture or the like into the inside of the semiconductor device. Thereby, a highly reliable semiconductor device can be realized.

Further, in the lead frame 1 or the like, the adjacent leads 12 are electrically connected to each other by using the connecting portion 13. That is, it is not necessary to electrically connect adjacent leads 12 to each other using a bonding wire. Thereby, a region for bonding the bonding wires to the leads 12 is not required.

Thereby, the bonding region of the bonding wires for connecting the leads 12 and the electrodes of the semiconductor wafer can be sufficiently ensured. Therefore, the unbonding of the bonding wires for connecting the leads 12 and the semiconductor wafer can be suppressed.

Further, in the lead frame 1 or the like, the adjacent leads 12 are connected to each other by using the connecting portion 13 having a larger sectional area than the bonding wires. Therefore, when the adjacent leads 12 are electrically connected to each other as compared with the case of using the bonding wires, higher conductivity can be achieved.

Further, in the lead frame 1 or the like, the lead wires 12 arranged on both sides of one lead support rod 15a are respectively provided with the joint portions 13. Further, the pair of coupling portions 13 are arranged to be shifted in the extending direction at intervals of the adjacent leads 12.

Each embodiment of the present invention has been described above. However, the present invention is not limited to the above embodiments. Various changes can be made to the embodiment without departing from the spirit and scope of the invention.

As described above, the lead frame 1 (1A to 1H) of the embodiment includes the plurality of unit lead frames 10 and the connecting rod 15. The unit lead frame 10 has a wafer holder 11, a plurality of leads 12, and a connecting portion 13 that connects the distal end portions 12a of the adjacent leads 12, and the unit lead frames 10 are arranged in a matrix. The connecting rod 15 connects the unit lead frames 10 to each other. Further, the connecting rod 15 includes a lead supporting rod 15a that supports the base end portion 12b of the lead 12. Further, a region (first region 15c) of the lead wire supporting rod 15a facing the coupling portion 13 is cut in a direction away from the connecting portion 13. Thereby, the connection portion 13 can be formed with high precision, and the connection portion 13 electrically connects the distal end portions to each other by connecting the distal end portions 12a of the lead wires 12 to each other.

Further, in the lead frame 1C (1D) of the embodiment, at least a part of the lead support rod 15a has the same thickness as the thickest portion (all metal portions) of the lead frame 1C (1D). Thereby, deformation of the lead frame 1C (1D) can be suppressed.

Further, in the lead frame 1D of the embodiment, the region (the first region 15c) opposed to the connection portion 13 has the same thickness as the thickest portion (all metal portions) of the lead frame 1D. Thereby, deformation of the lead frame 1D can be effectively suppressed.

Further, in the lead frame 1 (1C, 1D, 1G, 1H) of the embodiment, the region (the first region 15c) of the lead supporting bar 15a opposed to the connecting portion 13 is compared with the wire supporting bar 15a. The region (second region 15d) where the wafer holder 11 opposes and does not face the joint portion 13 has a narrower width. Thereby, when cutting along the extending direction of the connecting rod 15, it is possible to suppress the occurrence of burrs on the cut surface due to the lead support rod 15a.

Further, in the lead frame 1A (1B) of the embodiment, a part of the lead support rod 15a facing the connection portion 13 (the first region 15c) is notched so as to divide the lead support rod 15a. Thereby, the width of the connection portion 13 can be increased.

Further effects and modifications can be easily derived by those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details Therefore, various modifications can be made to the embodiments without departing from the general inventive concept or scope of the invention.

The lead frame of the embodiment of the present application may be the following first to fifth lead frames.

The first lead frame includes: a plurality of unit lead frames having a wafer holder, a plurality of leads, and a joint portion connecting the tip end portions of the adjacent lead wires to each other, and arranged in a matrix; the connecting rod, the unit The lead frames are coupled to each other, and the connecting rod includes a lead supporting rod that supports a base end portion of the lead, and a region of the lead supporting rod that opposes the connecting portion is cut toward a direction away from the connecting portion.

The second lead frame may be based on the first lead frame, and at least a portion of the lead support bar has the same thickness as the thickest portion of the lead frame.

The third lead frame may have the same thickness as the thickest portion of the lead frame in the region facing the connecting portion in addition to the second lead frame.

The fourth lead frame may also be based on any one of the first to third lead frames, the region opposite to the connecting portion, and the wafer holder in the lead support bar The width of the portion that faces and does not face the connecting portion is narrower.

The fifth lead frame may be formed by cutting at least a part of the region facing the connecting portion so as to divide the lead supporting rod, in addition to any one of the first to fourth lead frames.

The detailed description has been presented for purposes of illustration and description. Many variations and modifications are possible in light of the above teachings. The detailed description is not to be exhaustive or to limit the subject matter described herein. Although the subject matter has been described in terms of specific structural features and/or methods, it is understood that the subject matter defined in the claims is not necessarily limited to the specific features or the specific process. Rather, the specific features and specific processes described are described as examples of implementing the claims.

1‧‧‧ lead frame
10‧‧‧Unit lead frame
11‧‧‧ Wafer holder
12‧‧‧ leads
12a‧‧‧Top part
12b‧‧‧ base end
13‧‧‧Connecting Department
14‧‧‧With support rod
15‧‧‧ Connecting rod
15a‧‧‧Lead support rod
15b‧‧‧ Wafer holder rod
15c‧‧‧First area
15d‧‧‧Second area
16‧‧‧ frame
1A～1H‧‧‧ lead frame
W1‧‧‧Width
17a, 17b‧‧‧ Etching Department
DL‧‧‧ cutting line

1 is a schematic view and an enlarged plan view of a lead frame of an embodiment. Fig. 2 is an enlarged plan view showing a lead frame according to a first modification of the embodiment. Fig. 3 is an enlarged plan view showing a lead frame according to a second modification of the embodiment. Fig. 4 is an enlarged plan view showing a lead frame according to a third modification of the embodiment. Fig. 5 is a cross-sectional view in the direction of arrows in the line A-A shown in Fig. 4 of the second region and its modification. Fig. 6 is an enlarged plan view showing a lead frame according to a fourth modification of the embodiment. Fig. 7 is an enlarged plan view showing a lead frame according to a fifth modification of the embodiment. Fig. 8 is an enlarged plan view showing a lead frame according to a sixth modification of the embodiment. Fig. 9 is an enlarged plan view showing a lead frame according to a seventh modification of the embodiment. Fig. 10 is an enlarged plan view showing a lead frame according to a modification 8 of the embodiment.

1‧‧‧ lead frame

10‧‧‧Unit lead frame

11‧‧‧ Wafer holder

12‧‧‧ leads

12a‧‧‧Top part

12b‧‧‧ base end

13‧‧‧Connecting Department

14‧‧‧With support rod

15‧‧‧ Connecting rod

15a‧‧‧Lead support rod

15b‧‧‧ Wafer holder rod

15c‧‧‧First area

15d‧‧‧Second area

16‧‧‧ frame

Claims (6)

A lead frame comprising: a plurality of unit lead frames; and a connecting rod connecting the unit lead frames to each other; the unit lead frame having a wafer holder, a plurality of leads, and connecting the top ends of the adjacent leads to each other a connecting portion, wherein the unit lead frames are arranged in a matrix, the connecting rod includes a lead supporting rod for supporting a base end portion of the lead, and an area of the lead supporting rod opposite to the connecting portion The slit is oriented away from the joint. The lead frame of claim 1, wherein at least a portion of the lead support bar has the same thickness as a thickest portion of the lead frame. The lead frame according to claim 2, wherein the region opposed to the joint portion has the same thickness as the thickest portion of the lead frame. The lead frame according to any one of claims 1 to 3, wherein the region opposed to the joint portion is opposite to the wafer holder and not connected to the lead support rod The opposite areas have a narrower width. The lead frame according to any one of claims 1 to 3, wherein at least a part of the region opposed to the joint portion is cut in such a manner as to divide the lead support rod. The lead frame according to claim 4, wherein at least a portion of the region opposed to the joint portion is cut in such a manner as to divide the lead support rod.