TW201800340A - Led系統 - Google Patents
Led系統 Download PDFInfo
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- TW201800340A TW201800340A TW106105068A TW106105068A TW201800340A TW 201800340 A TW201800340 A TW 201800340A TW 106105068 A TW106105068 A TW 106105068A TW 106105068 A TW106105068 A TW 106105068A TW 201800340 A TW201800340 A TW 201800340A
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- 239000012855 volatile organic compound Substances 0.000 claims abstract description 57
- 239000000203 mixture Substances 0.000 claims abstract description 32
- 239000010457 zeolite Substances 0.000 claims abstract description 27
- 229910021536 Zeolite Inorganic materials 0.000 claims abstract description 13
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 9
- -1 polypropylene Polymers 0.000 claims description 9
- 229910052680 mordenite Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 5
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 claims description 5
- 239000012013 faujasite Substances 0.000 claims description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052622 kaolinite Inorganic materials 0.000 claims description 5
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- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 4
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- 229910018068 Li 2 O Inorganic materials 0.000 claims description 2
- 229910018071 Li 2 O 2 Inorganic materials 0.000 claims description 2
- 229910010082 LiAlH Inorganic materials 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
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- 239000000463 material Substances 0.000 description 31
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- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
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- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PGTMTTGPWLZNQO-UHFFFAOYSA-N 2-dodecyl-1,3,5,7,9,11-hexaoxa-2,4,6,8,10,12-hexasilacyclododecane Chemical compound C(CCCCCCCCCCC)[SiH]1O[SiH2]O[SiH2]O[SiH2]O[SiH2]O[SiH2]O1 PGTMTTGPWLZNQO-UHFFFAOYSA-N 0.000 description 1
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007937 lozenge Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
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- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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Classifications
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
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- B01J20/06—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising oxides or hydroxides of metals not provided for in group B01J20/04
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- B01J20/2805—Sorbents inside a permeable or porous casing, e.g. inside a container, bag or membrane
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- B01J20/28054—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their surface properties or porosity
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- B01J20/28—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
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- B01J20/28078—Pore diameter
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- Optics & Photonics (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Separation Of Gases By Adsorption (AREA)
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Abstract
一種LED系統,其包含經密封之內部體積,其含有對揮發性有機化合物(VOCs)之存在敏感的一種或多種元件,其中在該內部體積中存在著用於去除VOCs的吸氣劑組成物,其包含至少兩種不同類型之沸石的組合。
Description
本發明其本身為LED系統,其含有用於去除揮發性有機化合物(VOCs)的吸氣劑組成物。
已知LED是光電裝置,其利用一些半導體材料的光學性質,藉由電子-電洞再結合來產生光子。電子和電洞係從兩個區域注入再結合區,一個含有用於電子的n型摻雜物,另一個含有用於電洞的p型摻雜物,以實現所謂的p-n接面。
LED之光發射係藉由半導體材料及/或一種或多種發光材料(磷光體)來加以確定和界定,該等發光材料各自在可見光譜之經明確界定區域中發光,藉由適當地組合該等材料可實現不同顏色。舉例而言,可藉由組合紅光LED、綠光LED及藍光LED來獲得白光,或者是可使用單一藍光/UV光LED來激發相鄰的磷光體,其將在更長波長處再度發光,透過這種方式,具有磷光體的單一LED可擁有並展現出適當的色譜,諸如:黃光或黃光和紅光,其與來自LED的藍色發光結合而提供白色光。
基本上,LED係由分佈著磷光體的半導體材料(通常稱為「管芯」)薄片所構成,該薄片係經連接至用於電力供應和熱散逸的適當結構。
接著藉由聚合密封劑來保護管芯,且通常將此系統稱為LED封裝。
用於本發明之目的,術語「LED系統」包括安裝在傳統基板上並用聚合樹脂封裝的簡單LED封裝,以及也包括由LED封裝和額外組件所組成的照明裝置,該額外組件諸如:散熱器、反射器、漫射器、燈泡或外部管殼(external envelopes)。
這些LED系統的共同特徵為氣密密封,即該系統並不具有對外部環境之直接開口或通道,不同於以申請人名義進行提交之國際專利申請案WO 2016/181293中所揭示者。
相對於傳統光源,LED系統展現增強的發光和更長的操作壽命,但可能遭遇到性能衰減並出現可靠度問題,其係由於存在著揮發性有機汙染物,其可藉由以下材料來進行釋放:封裝材料及/或其它材料,諸如黏著劑(特別是基於環氧樹脂的黏著劑)、密封材料、填料、焊膏、溶劑殘留物、塗料及墊料。除了這種內部污染源之外,VOCs還可以透過滲透而從外部環境進入LED系統。
在氣密密封的LED系統中有相對高的工作溫度,其在最常見的系統和構造中在60℃和120℃範圍內。
在這種操作條件下,操作期間內所產生的VOCs被捕獲在系統內,或者是它們釋放的動力非常緩慢;結果就是它們會在密封的LED系統內擴散,造成封裝材料的顏色改變和透明度損失,導致光通量的性能降解和顏色偏移。
為了克服這些問題,LED製造商試圖在最大程度上避免使
用VOCs釋放材料,但這導致了在LED系統之設計和製造上的限制,舉例而言,藉由使用特定類型的PCBs(印刷電路板),生產該系統可能會相當昂貴。此外,在LED的使用壽命期間,不可能完全避免這些物質的滲透和釋放,即使在其實際使用之前、被放在架上時,仍將會遭遇到逐漸衰減。
可在以下來自Vossloh-Schwabe的應用說明中找到VOCs之有害影響和降解機制的更多細節:「Chemical Incompatibilities affecting LEDS」,目前可從以下網路位址中檢索到它:https://www.vossloh-schwabe.com/fileadmin/user_upload/Download/Produkte/Chemical_Incompatibility_EN.pdf
用於處理電子裝置中之VOCs污染物的解決方案經描述於美國專利申請案2004/0127358中,其描述了使用沸石來作為用於去除有害有機蒸汽的合適材料,其與氧清除劑結合使用,而國際專利申請案WO 2016/154156同樣揭示了使用沸石來作為去除污染物(包括VOCs)的合適材料。此外,美國專利申請案2005/0230691揭示了一種密封的LED系統,其具備一種整合吸氣劑,其含有用於去除氧、水及其它污染物(雖然沒有特別強調VOCs)之沸石。
LED系統中最常見的VOCs污染物為甲苯、苯、二甲苯、庚烯、庚烷、十二烷、十一烷、它們的烷基(例如甲基)衍生物、矽醇及其烷基衍生物、醚、酮、醛及胺。
本發明的目的為提供一種能夠克服這些問題的LED系統,並提供一種用於去除LED系統中之VOCs的改善解決方案,且在其第一態
樣中包括一種LED系統,其包含經密封的內部體積,其中在該內部體積中存在著用於去除揮發性有機化合物(VOCs)的吸氣劑組成物,該用於去除VOCs的吸氣劑組成物包含沸石材料組合,其中該沸石材料組合的一種組分係選自一或多種反式絲光沸石骨架(MFI)、八面沸石13X及絲光沸石,且該沸石組合含有林德A型(LTA)沸石,其量包含在4wt.%和25wt.%之間。
較佳地,在用於去除VOCs之該吸氣劑組成物中,不同沸石的量係藉由下列公式而獲得:
(MFI)x+(八面沸石13X)y+(絲光沸石)z+(LTA)d其中指數x、y、z及d為在用於去除VOCs之吸氣劑組成物中沸石類型的wt.%,且其中:˙x包含在0和80之間、˙y包含在0和90之間、˙z包含在0和60之間、˙d包含在4和25之間,˙以及x+y+z+d為100。
必須強調並理解,上述定義和公式並未排除LED內部體積中存在著其它化合物/材料,且這些範圍因此定義並提出了LTA沸石(對於本發明之目的和效用而言,其存在是有強制性的)相對於先前所詳細指名的其它類型沸石的重量比,以及沸石材料組合中其它類型的沸石的重量比。
發明人已發現到相對於美國專利申請案2004/0127358中所描述的沸石一般用途而言,根據本發明之吸氣劑材料具有更高的VOCs容量。
基於本發明之目的,沸石較佳具有大於700m2/g的表面積和等於或大於4埃的孔洞大小。
沸石的平均尺寸較佳為小於200μm,甚至更佳為小於100μm。對於非球形粉末而言,該尺寸是指最大顆粒大小,且該值係經用於平均測定。也可使用次微米大小的沸石,其經定義為所具有的分佈為90%的顆粒有著等於或小於1μm(X90<1μm)尺寸之沸石,其,即使性能的改善會被相關的複雜性增加和更高成本給抵消。
較佳地,在每單位自由內部體積中之吸氣劑組成物的量包含在0.04mg/cm3和0.60mg/cm3之間,且更佳地包含在0.06mg/cm3和0.40mg/cm3之間。該自由內部體積係經定義為密封LED系統中無組件/材料的內部體積,即保持在真空中,或者是經填充合適氣體或氣體混合物之LED系統的部分。
如國際專利申請案WO 2015/053706中所述,在LED系統中嵌入將與本發明之吸氣劑解決方案結合使用的VOCs氧化化合物,其可能是有用的。
可利用兩種機制來藉由合適的材料使VOCs氧化。在一種情況下,VOCs氧化化合物為氧分配劑(oxygen dispenser),且VOCs也由於LED系統內的高溫而被氧化。在這種情況下,較佳的釋氧組成物係選自以下之一或多種:MgO2、MgxZnyO2(其中x+y的總和=1)、CaO2、ZnO2、Li2O2、
Na2CO3:1.5H2O2、NaBO3:nH2O、KMnO4及Ca(MnO4)2。
另一VOCs氧化機制設想到的是使用促進在材料其本身表面上之VOCs反應的氧化物。在這種情況下,較佳的氧化材料為CuO、ZnO、MgO、Li2O、TiO2、MnO2及PdO。在這兩種情況下,在LED系統的每單位自由內部體積中,VOCs氧化化合物的量係有利地包含0.05mg/cm3和2.0mg/cm3之間,較佳在0.15mg/cm3和1.5mg/cm3之間。
由於VOCs與額外氧化化合物(其為氧分配劑或具有表面反應機制的氧化物)的反應將產生水,因此有用地也存在著0.03mg/cm3至1.5mg/cm3的CaO量。
在一個替代性具體實例中,根據本發明的吸氣系統係與釋氫材料一起使用。在每單位的自由內體積中,該釋氫材料係以包含在0.05mg/cm3至1.0mg/cm3之間的量存在著,且其較佳選自LiH、NaH、MgH2、CaH2、LiAlH4、LiBH4、NaAlH4、TiH2、ZrH4、YH2、ZrCr(2-x)Mn(x)H2(其中x包含在0和2之間)、LaNi(5-y)AlyH(6+z)、LaNi(5-y)SnyH(6+z)(其中y包含在0和0.25之間、z包含在0和0.5之間)及它們的次化學計量(sub-stoichiometric)化合物。
考慮到可從釋氫材料所放出之氫的高導熱性,這類解決方案有利於改善LED系統的熱散逸。必須強調的是,這類解決方案排除了VOCs氧化化合物的同時存在。這兩種解決方案(VOCs氧化化合物或釋氫化合物)能實現兩種不同的效果,並經擇一用於不同的情況:在第一種情況下,在除去VOCs時有協同效應,其對於處理LED系統中VOCs的產生/滲透之可能的瞬變(transients)和湧現(upsurges)是有用的;而第二種解決方案則改善了
導熱性,並在以下情況時被採用是最有用的:當需處理之經預見VOCs產生並未改變或至少低於某一門檻時。
必須注意的是,這些額外材料係視情況存在的,且可設想根據本發明之LED系統僅使用吸氣劑組成物來去除VOCs,因為根據本發明之LED系統的主要優點為,確保有效地去除存在於LED系統之內部體積裡的VOCs,以防止由於顏色變化和透明度損失所導致的照明性能衰減。
根據本發明之LED系統所提供的另一相關優點為選擇所採用材料的自由度,而不需考慮隨著時間過去,VOCs完全不見或VOCs的釋出及VOCs的滲透機制,以至於該系統能更可靠、簡易,且同時製造起來較不貴。特別是在一些LED系統中,可從所使用的材料中釋放特定的化合物(諸如矽烷醇或矽氧烷),且對它們的性能會具有不利的影響。
舉例而言,在也被稱作雷射二極體封裝的LED雷射封裝中,不希望存在以下物質:矽氧烷,諸如揮發性甲基矽氧烷、六甲基二矽氧烷、羥基三甲基矽烷、六甲基環三矽氧烷、八甲基環四矽氧烷、十甲基環五矽氧烷、十二甲基環六矽氧烷及其它低分子量的矽氧烷(分子量低於一千amu),且採用本發明中所述之吸氣劑材料有利於將它們去除,以便維持低程度的污染。
吸氣劑材料的合適結構為呈粉末形式,其本身在容器中經壓縮。此等結構之實例係為熟諳此技藝者所習知,且可在皆以申請人名義的歐洲專利案1851783和2408942中被找到,並透過引用形式將其教示併入本文中。在一個替代性具體實例中,可在容器中將該吸氣劑材料粉末與作為保持助劑的無機材料(其量有用地包含在20wt.%和80wt.%之間)進行混合
和壓縮,該無機材料較佳係選自以下一或多種材料:Cu合金、Sn合金、高嶺石黏土及蒙脫石黏土。另一合適的幾何結構係為美國專利6169361中所示者,在此案例中僅僅關係到氧分配解決方案,但也可有效地將此結構用於本發明。
或者,可用獨立(或自立)壓縮粉末形式來使用吸氣劑材料。在這種情況下,較佳的形狀為丸劑或錠劑,且也可在歐洲專利案2408942中找到這種情況的額外細節。在此結構的替代性具體實例中,藉由無機基質來保留吸氣劑粉末,該無機基質以大於50wt.%、較佳包含在60wt.%和90wt.%之間的量存在。用作保留基質的合適無機材料較佳係選自以下一種或多種:Cu合金、Sn合金、高嶺石黏土及蒙脫石黏土。
吸氣劑材料的另一較佳結構為分散在合適聚合基質中的粉末形式,或者是包含在氣體可滲透聚合管殼中的粉末形式。較佳的基質和聚合管殼材料係選自高密度聚乙烯(HDPE)、低密度聚乙烯(LDPE)、聚丙烯(PP)、聚苯乙烯(PS)、聚對酞酸乙二酯(PET)及聚氯乙烯(PVC)。這類吸氣劑材料結構之解決方案係為習知的,且經描述於例如皆以申請人名義的國際專利申請案WO 2007/066372和WO 2008/148781。
或者,可在合適的載體條上施加活性組成物,該載體條較佳為金屬條。在一個較佳的具體實例中,該活性組成物分散在聚合基質內,例如在聚酯環氧樹脂、環氧丙烯酸樹脂、丙烯酸樹脂、聚胺甲酸酯樹脂、矽氧烷基質、聚矽氧潤膏、聚醯亞胺及聚醯胺樹脂內,且較佳在沉積並黏附於載體上的聚矽氧基樹脂內,如以申請人名義的歐洲專利案1595930中所述。
一般來說,本發明包括以下事實:使用粉末本身,但也可有利地使用、合適地分散該粉末,以及藉由合適的化學試劑(黏合劑)或藉由合適的固化處理來黏結該粉末,例如熱處理,諸如燒結。
假如根據本發明之LED系統中存在著視情況(且相互排斥)的VOCs氧化化合物或H2分配材料,可將此等化合物和材料與吸氣劑組成物加以混合,或者是將其分開放置在LED系統的不同部分/區域中。
本發明並不限定於任何特定的LED系統,尤其是根據本發明之LED系統裝置有兩種主要的類型,第一種裝置在發光裝置中,諸如燈;第二種裝置則在光驅動裝置中,諸如雷射二極體系統和封裝。
將在以下非限制性實施例的幫助下進一步說明本發明,該實施例對樣品之甲苯吸附的相對性能進行鑑定,該樣品由金屬環所組成,其含有表1中所詳述之組成物的壓製粉末混合物,其中使用根據本發明所製備樣品S1〔(MFI)20+(八面沸石13X)45+(絲光沸石)20+(LTA)15〕來作為參照。
已進行以下特性化試驗:藉由微量天平來測量維持在1mbar固定壓力和室溫下的甲苯吸附容量,對本發明中所包括的樣品(S1-S3),還有不包括在本發明中的三個比較實施例(C1-C3)進行該試驗。
在表1中,用語「可比擬」表示相對於參照S1,在±7,5%內的容量差;「較差」表示相對於S1,從10%到30%的容量減少;「基本上較差」表示相對於S1,等於或大於30%的容量減少。
可觀察到的是,根據本發明之組成物S1-S3具有可比擬的容量,而三個比較實施例C1-C3(具有在本發明範圍之外的LTA沸石wt.%,C1和C3較高、C2較低)則在去除甲苯的總容量方面都具有變差之性能。
Claims (17)
- 一種包含經密封的內部體積之LED系統,該內部體積中含有用於去除揮發性有機化合物(VOCs)的吸氣劑組成物,其包含沸石材料組合,其中該沸石材料組合的一種組分係選自一或多種反式絲光沸石骨架(MFI)、八面沸石13X及絲光沸石,且該沸石材料組合含有林德A型(LTA)沸石,其特徵在於所含有林德A型沸石的量包含在4wt.%和25wt.%之間。
- 根據申請專利範圍第1項之LED系統,其中該用於去除VOCs的吸氣劑組成物中,不同沸石的量係藉由下列公式而獲得:(MFI)x+(八面沸石13X)y+(絲光沸石)z+(LTA)d其中指數x、y、z及d為在用於去除VOCs之吸氣劑組成物中沸石類型的wt.%,且其中:x包含在0和80之間、y包含在0和90之間、z包含在0和60之間、d包含在4和25之間,且x+y+z+d為100。
- 根據申請專利範圍第1項或第2項之LED系統,其中在每單位自由內部體積中,該用於去除VOCs之吸氣劑組成物的量包含在0.04mg/cm3和0.60mg/cm3之間,較佳在0.06mg/cm3和0.40mg/cm3之間。
- 根據申請專利範圍第1項或第2項之LED系統,其中該用於去除VOCs之吸氣劑組成物中的沸石具有大於700m2/g的表面積,和等於或大於4 埃的孔洞大小。
- 根據申請專利範圍第1項或第2項之LED系統,其中該用於去除VOCs之吸氣劑組成物能夠除去矽醇及/或矽氧烷。
- 根據申請專利範圍第1項或第2項之LED系統,其中在該用於去除VOCs之吸氣劑組成物之外,在該經密封的內部體積中存在著VOCs氧化化合物。
- 根據申請專利範圍第6項之LED系統,其中該VOCs氧化化合物係選自以下一或多種的釋氧組成物:MgO2、MgxZnyO2(其中x+y的總和=1)、CaO2、ZnO2、Li2O2、Na2CO3:1.5H2O2、NaBO3:nH2O、KMnO4及Ca(MnO4)2。
- 根據申請專利範圍第6項之LED系統,其中該VOCs氧化化合物係為或包括一種與VOCs直接反應的氧化物,其選自以下之一或多種:CuO、ZnO、MgO、Li2O、TiO2、MnO2及PdO。
- 根據申請專利範圍第6項之LED系統,其中在每單位自由內部體積中,該VOCs氧化化合物的量包含在0.05mg/cm3和2.0mg/cm3之間,較佳在0.15mg/cm3和1.50mg/cm3之間。
- 根據申請專利範圍第6項之LED系統,其中亦存在著CaO的量,其在每單位自由內部體積中,包含在0.03mg/cm3和1.5mg/cm3之間。
- 根據申請專利範圍第1項或第2項之LED系統,其中該用於去除VOCs之吸氣劑組成物為呈粉末形式,該粉末具有小於200μm,且更佳小於100μm的平均顆粒尺寸。
- 根據申請專利範圍第1項或第2項之LED系統,其中在該用於去除 VOCs之吸氣劑組成物之外,在該經密封的內部體積中存在著釋氫組成物。
- 根據申請專利範圍第12項之LED系統,其中該釋氫組成物係選自LiH、NaH、MgH2、CaH2、LiAlH4、LiBH4、NaAlH4、TiH2、ZrH4、YH2、ZrCr(2-x)Mn(x)H2(其中x包含在0和2之間)、LaNi(5-y)AlyH(6+z)、LaNi(5-y)SnyH(6+z)(其中y包含在0和0.25之間、z包含在0和0.5之間)及它們的次化學計量(sub-stoichiometric)化合物。
- 根據申請專利範圍第12項之LED系統,其中在每單位自由內部體積中,該釋氫組成物的量包含在0.05mg/cm3和1.0mg/cm3之間。
- 根據申請專利範圍第1項或第2項之LED系統,其中該用於去除VOCs之吸氣劑組成物為呈粉末形式,且該等粉末替代性地:經壓縮在金屬容器中,其視情況含有保持無機助劑,其量包含在20wt.%和80wt.%之間,該無機材料較佳係選自以下一或多種:Cu合金、Sn合金及高嶺石和蒙脫石黏土;或經壓縮成呈獨立丸劑或錠劑形式,其視情況含有保持無機助劑,其量包含在20wt.%和80wt.%之間,該無機材料較佳係選自以下一或多種:Cu合金、Sn合金及高嶺石和蒙脫石黏土;或藉由無機基質來加以保持,其中該無機基質的量大於50wt.%、且較佳包含在60wt.%和90wt.%之間,該無機基質較佳係選自以下一或多種:Cu合金、Sn合金及高嶺石和蒙脫石黏土;或經包含於氣體可滲透聚合管殼中,該管殼較佳係由以下一或多種所製成:高密度聚乙烯(HDPE)、低密度聚乙烯(LDPE)、聚丙烯(PP)、 聚苯乙烯(PS)、聚對酞酸乙二酯(PET)及聚氯乙烯(PVC);或經分散在有機基質內,其較佳係選自聚酯環氧樹脂、環氧丙烯酸樹脂、丙烯酸樹脂、聚胺甲酸酯樹脂、矽氧烷基質、聚矽氧潤膏、聚醯亞胺、聚醯胺樹脂及聚矽氧基樹脂。
- 根據申請專利範圍第15項之LED系統,其中將該用於去除VOCs之吸氣劑組成物與以下進行混合:根據申請專利範圍第6項至第9項中任一項之VOCs氧化化合物,或者根據申請專利範圍第12項至第14項中任一項之釋氫組成物。
- 根據申請專利範圍第1項或第2項之LED系統,其中該LED系統為發光裝置或光驅動裝置。
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ITUB2016A000888A ITUB20160888A1 (it) | 2016-02-19 | 2016-02-19 | Sistema led |
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CN (1) | CN108701741B (zh) |
HU (1) | HUE045376T2 (zh) |
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CN110230782B (zh) * | 2018-03-05 | 2021-08-10 | 通用电气照明解决方案有限公司 | Led灯 |
IT201900022509A1 (it) * | 2019-11-29 | 2021-05-29 | Getters Spa | Imballaggio alimentare per il controllo o la rimozione di ammine |
EP4214747B1 (en) * | 2021-11-30 | 2024-04-03 | Saes Getters S.p.A. | Getter composition and dispensable paste comprising said getter composition |
DE102022102087A1 (de) | 2022-01-28 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserpackage und verfahren zur herstellung eines laserpackage |
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US5513198A (en) * | 1993-07-14 | 1996-04-30 | Corning Incorporated | Packaging of high power semiconductor lasers |
US5696785A (en) * | 1994-10-11 | 1997-12-09 | Corning Incorporated | Impurity getters in laser enclosures |
IT1285988B1 (it) | 1996-11-22 | 1998-06-26 | Getters Spa | Dispensatore di ossigeno per lampade a scarica ad alta pressione |
JP2000113976A (ja) * | 1998-10-07 | 2000-04-21 | Tdk Corp | 有機el素子 |
IT1317981B1 (it) * | 2000-06-16 | 2003-07-21 | Getters Spa | Dispositivi assorbitori di umidita' per amplificatori laser e processo per la loro produzione. |
JP2003214958A (ja) * | 2002-01-21 | 2003-07-30 | Gigaphoton Inc | 波長検出装置、レーザ装置及び波長検出方法 |
US20040127358A1 (en) * | 2002-06-25 | 2004-07-01 | Derosa Michael E. | Versatile oxygen sorbents and devices |
JP4863329B2 (ja) * | 2004-01-26 | 2012-01-25 | 双葉電子工業株式会社 | 蛍光表示管 |
US7560820B2 (en) * | 2004-04-15 | 2009-07-14 | Saes Getters S.P.A. | Integrated getter for vacuum or inert gas packaged LEDs |
DE102004023637A1 (de) | 2004-05-10 | 2005-12-08 | Tesa Ag | UV-vernetzende Blockcopolymere |
GB0427647D0 (en) | 2004-12-17 | 2005-01-19 | Johnson Matthey Plc | Hydrogen getter |
CN101128945A (zh) * | 2005-02-21 | 2008-02-20 | 共同印刷株式会社 | 吸附膜及有机el器件 |
ITMI20050281A1 (it) | 2005-02-23 | 2006-08-24 | Getters Spa | Lampada a scarica ad alta pressione miniaturizzata contenente un dispositivo getter |
ITMI20052344A1 (it) | 2005-12-06 | 2007-06-07 | Getters Spa | Condensatori elettrolitici comprendenti mezzi in forma di foglio polimerico multistrato per l'assorbimento di sostanze nocive |
JP2007299905A (ja) * | 2006-04-28 | 2007-11-15 | Nichia Chem Ind Ltd | 半導体装置 |
ITMI20071147A1 (it) | 2007-06-05 | 2008-12-06 | Getters Spa | Batterie ricaricabili al litio comprendenti mezzi per l'assorbimento di sostanze nocive |
ITMI20090410A1 (it) | 2009-03-18 | 2010-09-19 | Getters Spa | Leghe getter non evaporabili adatte particolarmente per l'assorbimento di idrogeno |
ES2672228T3 (es) * | 2010-05-20 | 2018-06-13 | Exxonmobil Chemical Patents Inc. | Procedimiento de alquilación mejorado |
CN103443942A (zh) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | 半导体发光元件以及发光装置 |
US10193026B2 (en) | 2013-10-08 | 2019-01-29 | Heptagon Micro Optics Pte. Ltd. | Partial spacers for wafer-level fabricated modules |
WO2015132824A1 (ja) * | 2014-03-07 | 2015-09-11 | パナソニック株式会社 | 吸湿膜、防水膜及び有機el装置 |
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KR102283169B1 (ko) | 2015-05-11 | 2021-07-30 | 사에스 게터스 에스.페.아. | Led 시스템 |
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KR20180114044A (ko) | 2018-10-17 |
WO2017141159A1 (en) | 2017-08-24 |
HUE045376T2 (hu) | 2019-12-30 |
EP3417491B1 (en) | 2019-06-26 |
CN108701741B (zh) | 2021-05-11 |
KR102418219B1 (ko) | 2022-07-08 |
US10475714B2 (en) | 2019-11-12 |
EP3417491A1 (en) | 2018-12-26 |
CN108701741A (zh) | 2018-10-23 |
JP2019508893A (ja) | 2019-03-28 |
JP6659859B2 (ja) | 2020-03-04 |
US20190267521A1 (en) | 2019-08-29 |
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