TW201742215A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW201742215A
TW201742215A TW106105598A TW106105598A TW201742215A TW 201742215 A TW201742215 A TW 201742215A TW 106105598 A TW106105598 A TW 106105598A TW 106105598 A TW106105598 A TW 106105598A TW 201742215 A TW201742215 A TW 201742215A
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Taiwan
Prior art keywords
layer
semiconductor element
circuit layer
glass
semiconductor device
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TW106105598A
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English (en)
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TWI711141B (zh
Inventor
西元修司
長友義幸
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三菱綜合材料股份有限公司
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Publication of TW201742215A publication Critical patent/TW201742215A/zh
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Publication of TWI711141B publication Critical patent/TWI711141B/zh

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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

本發明係一種半導體裝置，其中，具備：由導電性材料所成之電路層，和加以搭載於電路層之一方的面的半導體元件，和加以配設於電路層之另一方的面之陶瓷基板，其特徵為對於電路層之一方的面，加以形成有具有玻璃層與加以層積於此玻璃層上之Ag層的Ag基材層，加以直接接合此Ag基材層之Ag層與半導體元件者。

Description

半導體裝置
本發明係有關具備：導電性材料所成之電路層，和加以搭載於此電路層上之半導體元件的半導體裝置。
本申請係依據申請於2016年2月29日之申請於日本之日本特願2016-037085號而主張優先權，而將此內容援用於其內容。
在LED或功率模組等之半導體裝置中，係具備加以接合有半導體元件於導電材料所成之電路層上之構造。
在為了控制風力發電，電動汽車，混合動力汽車等所使用之大電力控制用的功率半導體元件中，係從發熱量為多之情況，作為搭載此之基板，係自以往加以廣泛使用具備：例如AlN(氮化鋁)、Al2O3(氧化鋁)等之陶瓷基板所成之絕緣層，和於此絕緣層之一方的面，配設導電性優越之金屬而形成之電路層的陶瓷電路基板(功率模組用 基板)。
例如，在專利文獻1所示之功率模組(半導體裝置)中，係具備形成Al或Cu等之金屬所成之電路層於陶瓷基板之一方的面之功率模組用基板(陶瓷電路基板)，和接合於此電路層上之半導體元件的構造。並且，於功率模組用基板之另一方側，加以接合散熱板，而具備：將在半導體元件所產生的熱，傳達於功率模組用基板側，藉由散熱板而散熱於外部的構成。
對於將半導體元件等之電子構件接合於電路層上時，如專利文獻1所示，使用焊錫材的方法則被廣泛使用。在最近，從環境保護的觀點，例如，Sn-Ag系、Sn-In系、或Sn-Ag-Cu系等之無鉛銲錫則成為主流。
在此，在鋁或鋁合金所成之電路層中，係於表面加以形成有鋁的自然氧化膜之故，良好地進行經由焊錫材與半導體元件的接合者則為困難。
另外，在銅或銅合金所成之電路層中，係所熔融之焊錫材與銅則產生反應，對於電路層之內部係侵入有焊錫材的成分，而有電路層之特性產生劣化之虞。
因此，以往係如專利文獻1所示，形成Ni電鍍膜於電路層的表面之後，經由焊錫材而實施半導體元件。
另一方面，做為未使用焊錫材之接合方法，例如，對於專利文獻2係加以提案有使用Ag奈米電糊而接合半導體元件之技術。
另外，例如，對於專利文獻3，4，係加以提案有使 用包含金屬氧化物粒子與有機物所成之還原劑的氧化物電糊而接合半導體元件之技術。
因此，例如，對於專利文獻5~7，係加以提案有使用玻璃含有Ag電糊而於鋁或銅所成之電路層上，形成Ag基材層之後，藉由焊錫材或Ag電糊而接合電路層與半導體元件而接合電路層與半導體元件之技術。在此技術中，於鋁或銅所成之電路層的表面，經由塗佈玻璃含有Ag電糊而進行燒成之時，使加以形成於電路層之表面的氧化被膜反應於玻璃而除去，形成Ag基材層，於加以形成有此Ag基材層之電路層上，藉由焊錫或Ag電糊之燒成體所成之Ag接合層而接合半導體元件。
在此，Ag基材層係具備：經由玻璃則與電路層之氧化被膜反應而加以形成之玻璃層，和加以形成於此玻璃層上之Ag層。對於此玻璃層係分散有導電性粒子，而經由此導電性粒子而加以確保玻璃層之導電性。
〔先前技術文獻〕 〔專利文獻〕
〔專利文獻1〕日本特開2004-172378號公報
〔專利文獻2〕日本特開2006-202938號公報
〔專利文獻3〕日本特開2008-208442號公報
〔專利文獻4〕日本特開2009-267374號公報
〔專利文獻5〕日本特開2010-287869號公報
〔專利文獻6〕日本特開2012-109315號公報
〔專利文獻7〕日本特開2013-012706號公報
但，如記載於專利文獻1及專利文獻5，6地，對於使用焊錫材而接合半導體元件與電路層的情況，對於在高溫環境下所使用時，焊錫的一部分則產生熔融，而有半導體元件與電路層接合信賴性下降之虞。
特別是，但在最近中，自矽半導體期待有SiC或GaN等化合物半導體元件之實用化，為了預期半導體元件本身之耐熱性的提升，而有半導體裝置之使用溫度變高之傾向，如以往，在以焊錫材接合之構造中，對應則成為困難。
另外，如記載於專利文獻2-4及專利文獻7所記載地，對於作為接合材而使用金屬電糊及金屬氧化物電糊，藉由金屬電糊及金屬氧化物電糊之燒成體所成之接合層而接合半導體元件的情況，例如，在200℃以上之所高溫保持時，或例如，加以負荷到達至200℃以上之高溫的冷熱循環時，在接合層中，金屬之燒結則進行，而Ag之結晶(金屬結晶)則進行粒成長，加以形成局部性疏鬆部分與緊密部分，而空隙則生成於接合層，而有接合性產生下降之虞。
本發明係有鑑於前述情事所作為之構成，其目的為：即使為在比較高溫環境下所使用之情況，亦提供 對於電路層與半導體元件之接合信賴性優越，可安定使用之半導體裝置者。
為了解決如此之課題而達成前述目的，本發明之一形態之半導體裝置係具備：由導電性材料所成之電路層，和加以搭載於前述電路層之一方的面的半導體元件，和加以配設於前述電路層之另一方的面之陶瓷基板的半導體裝置，其特徵為對於前述電路層之一方的面，加以形成有具有玻璃層與加以層積於此玻璃層上之Ag層的Ag基材層，加以直接接合此Ag基材層之前述Ag層與前述半導體元件者。
如根據此構成之半導體裝置，於電路層之一方的面，加以形成有具有玻璃層與加以層積於此玻璃層上之Ag層的Ag基材層，而因加以直接接合此Ag基材層與半導體元件之故，未介入存在有焊錫材或金屬電糊所成之接合材，而即使在高溫環境下所使用之情況，亦未有在電路層與半導體元件之間產生熔融，以及經由燒結之進行而產生空隙者，而確實地加以接合電路層與半導體元件。因而，本發明之一形態之半導體裝置係成為即使在高溫環境下亦可安定使用。
在此，在本發明之一形態的半導體裝置中，前述半導體元件係於與前述Ag層加以接合的面，加以形成Au或Au合金所成之Au膜、及Ag或Ag合金所成之 Ag膜之任一者為佳。
對於形成Ag膜於與前述半導體元件的前述Ag層加以接合的面之情況，Ag基材層(Ag層)與半導體元件(Ag膜)則成為同種金屬彼此之接合，而可良好地接合電路層與半導體元件者。對於於與前述半導體元件的前述Ag層的面，使用Au膜之情況，係可以比較低溫而將半導體元件(Au膜)與Ag基材層(Ag層)進行固相擴散接合者。
另外，在本發明之一形態的半導體裝置中，前述半導體元件係作為做成功率半導體元件之構成亦可。
如根據如此構成之半導體裝置，即使為使用發熱量多之功率半導體元件的情況，亦可有效率地傳達熱至電路層者。然而，作為功率半導體係可舉出IGBT(Insulated Gate Bipolar Transistor)或MOSFET等。
如根據本發明，即使在比較高溫環境下加以使用的情況，亦可提供：對於電路層與半導體元件之接合信賴性優越，可安定使用之半導體裝置。
1‧‧‧功率模組(半導體裝置)
3‧‧‧半導體元件
3a‧‧‧表面處理膜
10‧‧‧功率模組用基板
11‧‧‧陶瓷基板
12‧‧‧電路層
30‧‧‧Ag基材層
31‧‧‧玻璃層
32‧‧‧Ag層
圖1係本發明之一實施形態的半導體裝置(功率模組)之概略說明圖。
圖2係圖1所示之半導體裝置(功率模組)之電路層與半導體元件的接合界面的擴大說明圖。
圖3係顯示Ag基材層與電路層之接合部份之要部擴大剖面圖。
圖4係顯示圖1所示之半導體裝置(功率模組)之製造方法的流程圖。
圖5係顯示圖1所示之半導體裝置(功率模組)之製造方法的概略說明圖。
圖6係顯示本發明之其他實施形態之半導體裝置(LED裝置)之概略說明圖。
以下，對於本發明之實施形態，參照附加的圖面加以說明。然而，在本實施形態之半導體裝置係加以搭載為了控制風力發電，電動汽車等之電性車輛等所使用之大電力控制用的功率半導體元件之功率模組。於圖1，顯示本發明之實施形態的功率模組(半導體裝置)。
此功率模組1係具備：加以配設有電路層12之功率模組用基板(陶瓷電路基板)10，和加以接合於電路層12之一方的面(在圖1中為上面)之半導體元件3，和加以配設於功率模組用基板10之另一方側的冷卻器50。
功率模組用基板10係如圖1所示，具備構成絕緣層之陶瓷基板11，和配設於此陶瓷基板11之一方的面(在圖1中為上面)之電路層12，和加以配設於陶瓷 基板11之另一方的面(在圖1中為下面)之金屬層13。
陶瓷基板11係為防止電路層12與金屬層13之間之電性連接的構成，而由絕緣性高之AlN(氮化鋁)，Si3N4(氮化矽)，Al2O3(氧化鋁)等加以構成。在本實施形態中，以散熱性優越之AlN(氮化鋁)而加以構成。另外，陶瓷基板11之厚度係加以設定為0.2mm~1.5mm之範圍內，而在本實施形態中，加以設定為0.635mm。
電路層12係於陶瓷基板11之一方的面，經由加以接合具有導電性之鋁或鋁合金，銅或銅合金之金屬板之時而加以形成。在本實施形態中，電路層12係由接合純度99.99mass%以上的鋁(所謂4N鋁)之延壓板者而加以形成。然而，電路層12之厚度係加以設定為0.1mm以上1.0mm以下之範圍內，而在本實施形態中，加以設定為0.6mm。另外，對於此電路層12係加以形成有電路圖案，而其一方的面(在圖1中為上面)則作為加以接合有半導體元件3之接合面。
金屬層13係經由加以接合鋁或鋁合金，銅或銅合金等之金屬板於陶瓷基板11之另一方的面之時而加以形成。在本實施形態中，此金屬板(金屬層13)係作為純度為99.99mass%以上的鋁(所謂4N鋁)之延壓板。在此，金屬層13之厚度係加以設定為0.2mm以上3.0mm以下之範圍內，而在本實施形態中，加以設定為1.6mm。
冷卻器50係為了冷卻前述之功率模組用基板 10者，在本實施形態中，具備為了流通冷卻媒體(例如，冷卻水)之流路51。此冷卻器50係由熱傳導性良好之材質加以構成者為佳，在本實施形態中，係由A6063(鋁合金)而加以構成。
半導體元件3係由Si，SiC、GaN等之半導體材料而加以構成，而對於與電路層12之接合面，係作為表面處理膜3a，加以形成Au或Au合金所成之Au膜、及Ag或Ag合金所成之Ag膜。在本實施形態中，表面處理膜3a係作為Ag膜。
在此，在本實施形態中，表面處理膜3a係經由濺鍍法等而以20nm~300nm之厚度加以成膜。表面處理膜3a之厚度係作為50nm~200nm者為佳，但並非限定於此等。
並且，在圖1所示之功率模組1中，如圖2所示，於電路層12表面，加以形成有Ag基材層30。然而，Ag基材層30係如圖1所示，未加以形成於電路層12之表面全體，而僅於加以配設半導體元件3之部分，即與半導體元件3之接合面，選擇性地加以形成。
在此，此Ag基材層30係如後述，作為包含玻璃成分之玻璃含有Ag電糊之燒成體。此Ag基材層30係在接合半導體元件3之前的狀態中，如圖3所示，具備加以形成於電路層12側之玻璃層31，和加以形成於此玻璃層31上之Ag層32。
對於玻璃層31內部係加以分散有粒徑為數毫微米程度之細微的導電性粒子33。此導電性粒子33係作為含有 Ag或Al之至少一方之結晶性粒子。然而，玻璃層31內之導電性粒子33係例如，由使用透過型電子顯微鏡(TEM)者而加以觀察。
另外，對於Ag層32內部係加以分散有粒徑為數毫微米程度之微細的玻璃粒子(未圖示)。
另外，在本實施形態中，從由電路層12為純度99.99mass%以上的鋁而加以構成之情況，對於電路層12之表面，係加以形成在大氣中自然產生之鋁氧化被膜12A。在此，在加以形成有前述Ag基材層30之部分中，加以除去此鋁氧化被膜12A，而於電路層12上直接加以形成有Ag基材層30。也就是，如圖3所示，加以直接接合構成電路層12的鋁與玻璃層31。
在本實施形態中，如圖3所示，自然產生於電路層12上之鋁氧化被膜12A的厚度to則作為4nm≦to≦6nm之範圍內。另外，玻璃層31之厚度tg則呈成為0.01μm≦tg≦5μm之範圍內，而Ag層32之厚度ta則呈成為1μm≦ta≦100μm之範圍內地加以構成。
然而，此Ag基材層30之厚度方向的電性阻抗值P則作為0.5Ω以下。在此，在本實施形態中，在Ag基材層30之厚度方向的電性阻抗值P係作為Ag基材層30之上面與電路層12之上面之間的電性阻抗值。此係因構成電路層12之鋁(4N鋁)的電性阻抗則比較於Ag基材層30之厚度方向之電性阻抗而為非常的小之故。然而，對於此電性阻抗的測定時，係作為測定Ag基材層30 之上面中央點，和自Ag基材層30之前述上面中央點至Ag基材層30端部為止之距離與僅同距離部分，自Ag基材層30端部遠離之電路層12上的點之間的電性阻抗。
接著，對於形成Ag基材層30之玻璃含有Ag電糊而加以說明。
此玻璃含有Ag電糊係含有Ag粉末，和玻璃粉末，和樹脂，和溶劑，和分散劑，而Ag粉末和玻璃粉末所成之粉末成分的含有量則作為玻璃含有Ag電糊全體之60質量%以上90質量%以下，殘留部則作為樹脂，溶劑，分散劑。
然而，在本實施形態中，Ag粉末和玻璃粉末所成之粉末成分的含有量係作為玻璃含有Ag電糊全體之85質量%。
另外，此玻璃含有Ag電糊係加以調整為其黏度為10Pa．s以上500Pa．s以下、更理想為50Pa．s以上300Pa．s以下。
Ag粉末係其粒徑則作為0.05μm以上1.0μm以下，而在本實施形態中，使用平均粒徑0.8μm者。
玻璃粉末係例如，含有氧化鉛，氧化鋅，氧化矽，氧化硼，氧化磷及氧化鉍之任1種或2種以上，其玻璃轉移溫度則作為300℃以上450℃以下、軟化溫度則作為600℃以下，結晶化溫度則作為450℃以上。
在本實施形態中，作為主成分而由氧化鉛與氧化鋅與氧化硼所成，使用平均粒徑為0.5μm之玻璃粉末。
另外，Ag粉末之重量A與玻璃粉末之重量G之重量比A/G係加以調整為自80/20至99/1之範圍內，在本實施形態中，做成A/G=80/5。
溶劑係沸點則200℃以上者為適合，在本實施形態中，使用乙二醇二丁醚。
樹脂係調整玻璃含有Ag電糊的黏度者，以400℃以上加以分解者為適合。在本實施形態中，使用乙基纖維。
另外，在本實施形態中，添加二羧酸系之分散劑。然而，未添加分散劑而構成玻璃含有Ag電糊亦可。
此玻璃含有Ag電糊係將混合Ag粉末與玻璃粉末之混合粉末，和混合溶劑與樹脂之有機混合物，與分散劑同時，經由混合器而作為預備混合，將所得之預備混合物，經由輥軋機而揉搓同時進行混合後，經由電糊過濾機而過濾所得到之調和物而加以製造出。
接著，對於本實施形態之功率模組1之製造方法，參照圖4及圖5加以說明。
首先，準備：加以形成電路層12於陶瓷基板11之一方的面，而於陶瓷基板11之另一方的面，加以形成金屬層13之功率模組用基板10，而於此功率模組用基板10之電路層12上，塗佈玻璃含有Ag電糊40(玻璃含有Ag電糊塗佈工程S01)。在此，對於在塗佈玻璃含有Ag電糊40時，係可採用網版印刷法，平板印刷法，感光性處理等之種種手段者。在本實施形態中，經由網版印刷法而將玻璃含有Ag電糊40形成為圖案狀。
在塗佈玻璃含有Ag電糊40於電路層12之一方的面之狀態，裝入至加熱爐61內而進行加熱處理而進行玻璃含有Ag電糊40的燒成(第1加熱處理工程S02)。經由此第1加熱處理工程S02，加以形成具備玻璃層31與Ag層32之Ag基材層30。
在此第1加熱處理工程S02中，在加以燒成玻璃含有Ag電糊40時，經由玻璃層31之時，加以熔融除去自然產生於電路層12表面之鋁氧化被膜12A，直接形成玻璃層31於電路層12。另外，對於玻璃層31內部係加以分散有粒徑為數毫微米程度之微細的導電性粒子33。此導電性粒子33係作為含有Ag或Al之至少一方的結晶性粒子，加以推測在燒成時，析出於玻璃層31內部者。
更且，於Ag層32之內部，加以分散粒徑為數毫微米程度之玻璃粒子者。此玻璃粒子係加以推測在Ag粒子之燒成進行的過程，殘存之玻璃成分則產生凝集者。
在本實施形態中，在第1加熱處理工程S02中之加熱溫度則加以設定為350℃以上645℃以下之範圍內，在加熱溫度的保持時間則加以設定為1分以上60分以下之範圍內。並且，經由以如此之條件進行加熱處理之時，在第1加熱處理工程S02後所形成之Ag基材層30之Ag層32的平均結晶粒徑則加以調整為0.5μm以上3.0μm以下之範圍內。
在此，對於在第1加熱處理工程S02之加熱 溫度則不足350℃，及在加熱溫度之保持時間為不足1分之情況，燒成則成為不充分，而有無法充分形成Ag基材層30之虞。另一方面，對於在第1加熱處理工程S02之加熱溫度超過645℃之情況，及在加熱溫度的保持時間則超過60分之情況，燒成則過度進行，而在第1加熱處理工程S02後所形成之Ag基材層30之Ag層32的平均結晶粒徑則有無法成為0.5μm以上3.0μm以下之範圍內之虞。
從以上的情況，在本實施形態中，在第1加熱處理工程S02中之加熱溫度則加以設定為350℃以上645℃以下之範圍內，在加熱溫度的保持時間則加以設定為1分以上60分以下之範圍內。
然而，對於為了確實地形成Ag基材層30，將在第1加熱處理工程S02之加熱溫度的下限作為400℃以上者為佳，而作為450℃以上者為佳。另外，將在加熱溫度的保持時間之下限作為5分以上者為佳，而作為10分以上者為佳。
另一方面，對於為了確實地抑制在第1加熱處理工程S02之燒成的進行，將在第1加熱處理工程S02之加熱溫度的上限作為600℃以下者為佳，而作為575℃以下者更佳。另外，將在加熱溫度的保持時間之上限作為45分以下者為佳，而作為30分以下者為更佳。並且，由以如此之條件進行加熱處理者，在第1加熱處理工程S02後之Ag基材層30之Ag層32的平均結晶粒徑則加以調整為 0.5μm以上3.0μm以下之範圍內。
接著，如圖5所示，於Ag基材層30之Ag層32上，層積半導體元件3(半導體元件層積工程S03)。此時，半導體元件3之表面處理膜3a則呈朝向Ag基材層30地進行配置。
並且，如圖5所示，在將層積的半導體元件3與功率模組用基板10加壓於層積方向的狀態，配置於加熱爐62內而進行加熱處理，接合半導體元件3與功率模組用基板10(第2加熱處理工程S04)。此時，在Ag基材層30之Ag層32的燒成則更加進行之同時，加以接合半導體元件3。即，在本實施形態中，由進行第1加熱處理工程S02與第2加熱處理工程S04之2階段的加熱處理者，進行Ag基材層30之Ag層32的燒成。
在此，在第2加熱處理工程S04中，層積方向的加壓壓力則加以設定為5MPa以上40MPa以下之範圍內，而加熱溫度則加以設定為200℃以上400℃以下之範圍內，在加熱溫度之保持時間則加以設定為1分以上60分以下之範圍內。
然而，在第2加熱處理工程S04後中，Ag層32之平均結晶粒徑係未產生變化。
此係因在第2加熱處理工程S04之加熱溫度則較第1加熱處理工程S02為低之故。
在此，對於在第2加熱處理構成S04之層積方向的加壓壓力則為不足5MPa之情況，係有半導體元件 3與電路層12之接合強度成為不充分之虞。另一方面，對於在第2加熱處理構成S04之層積方向的加壓壓力則超過40MPa之情況，係有對於陶瓷基板11產生有斷裂之虞。
從以上的情況，在本實施形態中，將第2加熱處理構成S04之層積方向的加壓壓力設定為5MPa以上40MPa以下之範圍內。
然而，對於為了更提升半導體元件3與電路層12之接合強度，而將在第2加熱處理構成S04之層積方向的加壓壓力的下限作為10MPa以上者為佳。另外，對於為了確實地抑制陶瓷基板11之斷裂的產生，而將在第2加熱處理構成S04之層積方向的加壓壓力的上限作為35MPa以下者為佳。
另外，對於在第2加熱處理工程S04之加熱溫度則不足200℃及在加熱溫度的保持時間則不足1分之情況，係有半導體元件3與電路層12之接合強度成為不充分之虞。另一方面，對於在第2加熱處理工程S04之加熱溫度則超過400℃及在加熱溫度的保持時間則超過60分之情況，半導體元件3之特性則有經由熱而產生劣化之虞。
從以上的情況，在本實施形態中，在第2加熱處理工程S04中之加熱溫度則加以設定為200℃以上400℃以下之範圍內，在加熱溫度的保持時間則加以設定為1分以上60分以下之範圍內。在第2加熱處理工程S04中之加熱 溫度係加以設定為250℃以上350℃以下之範圍內，而在加熱溫度的保持時間係加以設定為2分以上10分以下之範圍內者，則未加以限定於此等。
經由上述的製造方法，加以製造出直接接合形成於電路層12上之Ag基材層30之Ag層32與半導體元件3之本實施形態的功率模組1。
如根據作為如以上構成之有關本實施形態之功率模組(半導體裝置)1，於電路層12之一方的面，加以形成有玻璃層31與加以層積於此玻璃層31上之Ag層32的Ag基材層30，而因加以直接接合Ag基材層30之Ag層32與半導體元件3之故，即使在高溫環境下使用的情況，亦對於電路層12與半導體元件3之接合信賴性優越。因而，有關本實施形態之功率模組1係即使在高溫環境下亦可成為安定使用者。
另外，在本實施形態中，因於半導體元件3之中與Ag基材層30之接合面，加以形成Ag膜所成之表面處理膜3a之故，Ag基材層30(Ag層32)與半導體元件3(表面處理膜3a)則成為同種金屬彼此的接合，而可良好地接合電路層12與半導體元件3者。
更且，在本實施形態中，由進行第1加熱處理工程S02與第2加熱處理工程S04之2階段的加熱處理者，進行Ag基材層30之Ag層32的燒成，而因在第2加熱處理工程S04中，層積半導體元件3而加壓於層積方向之故，成為可良好地接合Ag基材層30之Ag層32與 半導體元件3者。
以上，對於本發明之實施形態已做過說明，但本發明係未加以限定於此等，而在不脫離其發明之技術思想範圍，可作適宜變更。
例如，在本實施形態中，作為將構成電路層及金屬層之金屬板做成純度99.99mass%之純鋁(4N鋁)之延壓板者加以說明過，但並無加以限定於此，而亦可以其他的鋁或鋁合金而加以構成。另外，將構成電路層及金屬層之金屬板，以銅或銅合金而構成亦可。更且，將銅板與鋁板做成固相擴散接合之構造者亦可。
另外，作為絕緣層而使用AlN所成之陶瓷基板者加以說明過，但並非限定於此者，亦可使用Si3N4或Al2O3等所成之陶瓷基板，而亦可經由絕緣樹脂而構成絕緣層。
另外，散熱板係並非限定於在本實施形態所例示之構成者，而對於散熱板的構造未特別有限定。
更且，對於散熱板與金屬層之間，設置緩衝層亦可。作為緩衝層，係可使用鋁或鋁合金，或是包含鋁之複合材(例如，AlSiC等)所成之板材者。
另外，在本實施形態中，作為半導體裝置，舉例說明過加以搭載有功率半導體元件之功率模組，但並不限定於此等，而如為於導電性材料所成之電路層上，加以搭載半導體元件之半導體裝置即可。
例如，亦可為作為半導體元件而使用熱電變換元件之 熱電變換模組。
另外，例如，如圖6所示，亦可為搭載LED元件(半導體元件)之LED裝置(半導體裝置)。
圖6所示之LED裝置101係具備：LED元件103，和導電性材料所成之電路層112。然而，LED元件103係經由銲接線107而與電路層112加以電性連接，具備經由封閉材108而加以封閉LED元件103及銲接線107之構造。對於電路層112之一方的面，係加以設置玻璃含有Ag電糊之燒成體所成之Ag基材層130，而對於LED元件103之背面，係加以設置導電性反射膜116及保護膜115。並且，LED元件103則作為加以直接接合於Ag基材層130上之構造。
在如此之LED裝置101中，亦於電路層112之一方的面，加以形成Ag基材層130，而因加以直接接合此Ag基材層130與LED元件103之故，即使為在高溫環境下使用的情況，亦對於電路層112與LED元件103之接合信賴性優越。
〔實施例〕
對於為了確認本發明之有效性而進行之確認實驗加以說明。
於陶瓷基板之一方的面，接合金屬板而形成電路層。在此，陶瓷基板係作為AlN，而尺寸係作為27mm×17mm×0.6mm。成為電路層之金屬板係作為表1所 示之材質，尺寸係作為25mm×15mm×0.3mm。
然而，對於金屬板為鋁板之情況，係作為接合材而使用Al-Si系焊接填料金屬。另外，對於金屬板為銅板之情況，係作為接合材而使用活性金屬焊接填料金屬(Ag-Cu-Ti焊接填料金屬)。
於電路層的表面，經由塗佈在實施形態所說明之玻璃含有Ag電糊而以表1所示之條件進行加熱處理之時，形成Ag基材層(第1加熱處理工程)。
然而，作為玻璃含有Ag電糊之玻璃粉末，使用包含90.6質量%之Bi2O3，2.6質量%之ZnO，6.8質量%之B2O3的無鉛玻璃粉末。另外，作為樹脂而使用乙基纖維，而作為溶劑而使用二乙二醇二甲醚。更且，添加二羧酸系之分散劑。
在此，調整在玻璃含有Ag電糊之Ag粉末之重量A與玻璃粉末之重量G的重量比A/G，及塗佈量，如表1所示地，調整玻璃層與Ag層之厚度。
並且，在本發明例中，於Ag基材層上層積半導體元件，以表1所示之條件進行加熱處理，而接合半導體元件於電路層(第2加熱處理工程)。半導體元件之尺寸係作成5mm×5mm×0.2mm。
在此，在本發明例1~23及比較例1~2中，係於與半導體元件的電路層與之接合面，以濺鍍法而呈成為厚度100nm地形成表1所示之材質所成的表面處理膜。
然而，在比較例1中，未形成Ag基材層，而 於電路層形成厚度2μm之Ag電鍍層，再於其上方接合半導體元件。
在比較例2中，於Ag基材層上塗佈氧化銀電糊，層積半導體元件，由燒成氧化銀電糊而形成接合層，接合半導體元件。
作為氧化銀電糊，使用市售之氧化銀粉末(日本和光純藥工業股份有限公司)，和作為還原劑而使用十四醯醇，作為溶劑而使用2,2,4-三甲基-1,3-戊二醇單(2-甲基丙酸)，而使用以氧化銀粉末80質量%、還原劑(十四醯醇)：10質量%、溶劑(2,2,4-三甲基-1,3-戊二醇單(2-甲基丙酸))：殘留部之比例混合之氧化銀電糊。
另外，將氧化銀電糊的塗佈厚度作為50μm，而燒成溫度作為300℃、燒成時間作為10分。更且，將對於半導體元件的層積方向之加壓壓力作為30MPa。
(元件下的平均Ag結晶粒徑)
對於上述之本發明例及比較例的半導體裝置，以EBSD而測定半導體元件接合後之Ag層的平均結晶粒徑。
EBSD測定係經由EBSD測定裝置(FEI公司製Quanta FEG 450，EDAX/TSL公司製OIM Data Collection)，和解析軟件(EDAX/TSL公司製OIM Data Analysis ver.5.3)，以電子線之加速電壓：20kV、測定步驟：0.05μm加以實施。
(冷熱循環前後的接合率)
對於上述之本發明例及比較例之半導體裝置，使用超音波探傷裝置，自以下式而求取半導體元件與電路層之接合率。在此，初期接合面積係指作為在接合前之欲接合的面積，即半導體元件面積。在超音波探傷像中，剝離係從以接合部內之白色部所顯示之情況，將此白色部的面積做成剝離面積。
(接合率)={(初期接合面積)-(剝離面積)}/(初期接合面積)×100
然而，對於半導體裝置，進行冷熱循環試驗，比較初期之接合率與冷熱循環試驗後之接合率。冷熱循環係將以-40℃ 5分與以200℃ 15分作為1循環，實施3000循環。將其評估結果示於表1。
在將接合半導體元件於Ag電鍍層上之比較例1，及使用氧化銀電糊而接合半導體元件於Ag基材層上之比較例2中，係冷熱循環後之接合率則大幅降低。在比較例2中，係於負荷到達至200℃之高溫的冷熱循環時，在氧化銀電糊之燒成體所成之接合層中，加以推測Ag之結晶粒成長則進行，於Ag接合層內產生有縱狀的斷裂，生成空隙之故而剝離。
對此，在直接接合半導體元件於Ag基材層上之本發明例中，係在冷熱循環後，接合率亦未產生大的變化。此係認為因未經由冷熱循環的負荷而Ag之結晶粒成長未進展之故。
從以上之情況，如根據本發明例，即使在比較高溫環境下加以使用的情況，亦可提供：確實地加以接合電路層與半導體元件，可安定使用之半導體裝置。
〔產業上之利用可能性〕
如根據本發明之半導體裝置，即使在比較高溫環境下加以使用的情況，亦可提供：對於電路層與半導體元件之接合信賴性優越，可安定使用。
3‧‧‧半導體元件
3a‧‧‧表面處理膜
12‧‧‧電路層
30‧‧‧Ag基材層
31‧‧‧玻璃層
32‧‧‧Ag層

Claims (3)

  1. 一種半導體裝置，係具備：由導電性材料所成之電路層，和加以搭載於前述電路層之一方的面的半導體元件，和加以配設於前述電路層之另一方的面之陶瓷基板的半導體裝置，其特徵為對於前述電路層之一方的面，加以形成有具有玻璃層與加以層積於此玻璃層上之Ag層的Ag基材層，加以直接接合此Ag基材層之前述Ag層與前述半導體元件者。
  2. 如申請專利範圍第1項記載之半導體裝置，其中，前述半導體元件係於與前述Ag層加以接合的面，加以形成Au或Au合金所成之Au膜、及Ag或Ag合金所成之Ag膜之任一者。
  3. 如申請專利範圍第1項或第2項記載之半導體裝置，其中，前述半導體元件係作為功率半導體元件者。
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