TW201738339A - 研磨用組合物和研磨方法及半導體基板的製造方法 - Google Patents
研磨用組合物和研磨方法及半導體基板的製造方法 Download PDFInfo
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- TW201738339A TW201738339A TW106108896A TW106108896A TW201738339A TW 201738339 A TW201738339 A TW 201738339A TW 106108896 A TW106108896 A TW 106108896A TW 106108896 A TW106108896 A TW 106108896A TW 201738339 A TW201738339 A TW 201738339A
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- 238000005498 polishing Methods 0.000 title claims abstract description 165
- 239000000203 mixture Substances 0.000 title claims abstract description 93
- 239000000758 substrate Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 239000006061 abrasive grain Substances 0.000 claims abstract description 36
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 25
- 239000007800 oxidant agent Substances 0.000 claims abstract description 15
- -1 InGaAsP Inorganic materials 0.000 claims description 88
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 150000003839 salts Chemical class 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims description 4
- 150000001721 carbon Chemical class 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000010410 layer Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 13
- 229910000420 cerium oxide Inorganic materials 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 12
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 11
- 238000000227 grinding Methods 0.000 description 11
- 229910052707 ruthenium Inorganic materials 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 238000004090 dissolution Methods 0.000 description 9
- 239000003112 inhibitor Substances 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 150000007524 organic acids Chemical class 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 7
- 230000002209 hydrophobic effect Effects 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000003002 pH adjusting agent Substances 0.000 description 6
- 239000003755 preservative agent Substances 0.000 description 6
- 239000011164 primary particle Substances 0.000 description 6
- 239000011163 secondary particle Substances 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 229910019142 PO4 Inorganic materials 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000010452 phosphate Substances 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 150000005215 alkyl ethers Chemical class 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000002391 heterocyclic compounds Chemical class 0.000 description 4
- 125000001165 hydrophobic group Chemical group 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 239000005871 repellent Substances 0.000 description 4
- KAKVFSYQVNHFBS-UHFFFAOYSA-N (5-hydroxycyclopenten-1-yl)-phenylmethanone Chemical compound OC1CCC=C1C(=O)C1=CC=CC=C1 KAKVFSYQVNHFBS-UHFFFAOYSA-N 0.000 description 3
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000003429 antifungal agent Substances 0.000 description 3
- 229940121375 antifungal agent Drugs 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 description 3
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- LWIHDJKSTIGBAC-UHFFFAOYSA-K potassium phosphate Substances [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 3
- 230000002335 preservative effect Effects 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000000542 sulfonic acid group Chemical group 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- SMNDYUVBFMFKNZ-UHFFFAOYSA-N 2-furoic acid Chemical compound OC(=O)C1=CC=CO1 SMNDYUVBFMFKNZ-UHFFFAOYSA-N 0.000 description 2
- IHCCAYCGZOLTEU-UHFFFAOYSA-N 3-furoic acid Chemical compound OC(=O)C=1C=COC=1 IHCCAYCGZOLTEU-UHFFFAOYSA-N 0.000 description 2
- DQYSALLXMHVJAV-UHFFFAOYSA-M 3-heptyl-2-[(3-heptyl-4-methyl-1,3-thiazol-3-ium-2-yl)methylidene]-4-methyl-1,3-thiazole;iodide Chemical compound [I-].CCCCCCCN1C(C)=CS\C1=C\C1=[N+](CCCCCCC)C(C)=CS1 DQYSALLXMHVJAV-UHFFFAOYSA-M 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- CHTHALBTIRVDBM-UHFFFAOYSA-N furan-2,5-dicarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)O1 CHTHALBTIRVDBM-UHFFFAOYSA-N 0.000 description 2
- 229960004275 glycolic acid Drugs 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical compound OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 235000011181 potassium carbonates Nutrition 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- ZIWRUEGECALFST-UHFFFAOYSA-M sodium 4-(4-dodecoxysulfonylphenoxy)benzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCOS(=O)(=O)c1ccc(Oc2ccc(cc2)S([O-])(=O)=O)cc1 ZIWRUEGECALFST-UHFFFAOYSA-M 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 2
- 239000001488 sodium phosphate Substances 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- PANBYUAFMMOFOV-UHFFFAOYSA-N sodium;sulfuric acid Chemical compound [Na].OS(O)(=O)=O PANBYUAFMMOFOV-UHFFFAOYSA-N 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OXQGTIUCKGYOAA-UHFFFAOYSA-N 2-Ethylbutanoic acid Chemical compound CCC(CC)C(O)=O OXQGTIUCKGYOAA-UHFFFAOYSA-N 0.000 description 1
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 1
- CVKMFSAVYPAZTQ-UHFFFAOYSA-N 2-methylhexanoic acid Chemical compound CCCCC(C)C(O)=O CVKMFSAVYPAZTQ-UHFFFAOYSA-N 0.000 description 1
- 125000005916 2-methylpentyl group Chemical group 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- MLMQPDHYNJCQAO-UHFFFAOYSA-N 3,3-dimethylbutyric acid Chemical compound CC(C)(C)CC(O)=O MLMQPDHYNJCQAO-UHFFFAOYSA-N 0.000 description 1
- GUUULVAMQJLDSY-UHFFFAOYSA-N 4,5-dihydro-1,2-thiazole Chemical compound C1CC=NS1 GUUULVAMQJLDSY-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DFYGYTNMHPUJBY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane-1-thiol Chemical compound SCCCC(C(OC)(OC)OC)CCCCCCCC DFYGYTNMHPUJBY-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YDBPCAYBEBHTIP-UHFFFAOYSA-N C(C=1C(C(=O)O)=CC=CC1)(=O)O.[P] Chemical compound C(C=1C(C(=O)O)=CC=CC1)(=O)O.[P] YDBPCAYBEBHTIP-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Natural products C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- NWGKJDSIEKMTRX-AAZCQSIUSA-N Sorbitan monooleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O NWGKJDSIEKMTRX-AAZCQSIUSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- AZFNGPAYDKGCRB-XCPIVNJJSA-M [(1s,2s)-2-amino-1,2-diphenylethyl]-(4-methylphenyl)sulfonylazanide;chlororuthenium(1+);1-methyl-4-propan-2-ylbenzene Chemical compound [Ru+]Cl.CC(C)C1=CC=C(C)C=C1.C1=CC(C)=CC=C1S(=O)(=O)[N-][C@@H](C=1C=CC=CC=1)[C@@H](N)C1=CC=CC=C1 AZFNGPAYDKGCRB-XCPIVNJJSA-M 0.000 description 1
- YVZLYNHKJASIHA-UHFFFAOYSA-L [Na+].[K+].OP(O)([O-])=O.OP(O)([O-])=O Chemical compound [Na+].[K+].OP(O)([O-])=O.OP(O)([O-])=O YVZLYNHKJASIHA-UHFFFAOYSA-L 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229960004365 benzoic acid Drugs 0.000 description 1
- XSCHRSMBECNVNS-UHFFFAOYSA-N benzopyrazine Natural products N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229940046413 calcium iodide Drugs 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- MKJXYGKVIBWPFZ-UHFFFAOYSA-L calcium lactate Chemical compound [Ca+2].CC(O)C([O-])=O.CC(O)C([O-])=O MKJXYGKVIBWPFZ-UHFFFAOYSA-L 0.000 description 1
- 239000001527 calcium lactate Substances 0.000 description 1
- 235000011086 calcium lactate Nutrition 0.000 description 1
- 229960002401 calcium lactate Drugs 0.000 description 1
- GBAOBIBJACZTNA-UHFFFAOYSA-L calcium sulfite Chemical compound [Ca+2].[O-]S([O-])=O GBAOBIBJACZTNA-UHFFFAOYSA-L 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 235000010261 calcium sulphite Nutrition 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 description 1
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- ZUDYLZOBWIAUPC-UHFFFAOYSA-L disodium;pentanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CCCC([O-])=O ZUDYLZOBWIAUPC-UHFFFAOYSA-L 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N iso-quinoline Natural products C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 description 1
- 229940031993 lithium benzoate Drugs 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229910000032 lithium hydrogen carbonate Inorganic materials 0.000 description 1
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- LDJNSLOKTFFLSL-UHFFFAOYSA-M lithium;benzoate Chemical compound [Li+].[O-]C(=O)C1=CC=CC=C1 LDJNSLOKTFFLSL-UHFFFAOYSA-M 0.000 description 1
- HQRPHMAXFVUBJX-UHFFFAOYSA-M lithium;hydrogen carbonate Chemical compound [Li+].OC([O-])=O HQRPHMAXFVUBJX-UHFFFAOYSA-M 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- JESHZQPNPCJVNG-UHFFFAOYSA-L magnesium;sulfite Chemical compound [Mg+2].[O-]S([O-])=O JESHZQPNPCJVNG-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004001 molecular interaction Effects 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 150000002908 osmium compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 229960003424 phenylacetic acid Drugs 0.000 description 1
- 239000003279 phenylacetic acid Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 235000010235 potassium benzoate Nutrition 0.000 description 1
- 239000004300 potassium benzoate Substances 0.000 description 1
- 229940103091 potassium benzoate Drugs 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 description 1
- 229910000343 potassium bisulfate Inorganic materials 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010289 potassium nitrite Nutrition 0.000 description 1
- 239000004304 potassium nitrite Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- BHZRJJOHZFYXTO-UHFFFAOYSA-L potassium sulfite Chemical compound [K+].[K+].[O-]S([O-])=O BHZRJJOHZFYXTO-UHFFFAOYSA-L 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 235000019252 potassium sulphite Nutrition 0.000 description 1
- 229940020414 potassium triiodide Drugs 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 229940079827 sodium hydrogen sulfite Drugs 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 235000010288 sodium nitrite Nutrition 0.000 description 1
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 229950004959 sorbitan oleate Drugs 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- UJJLJRQIPMGXEZ-UHFFFAOYSA-N tetrahydro-2-furoic acid Chemical compound OC(=O)C1CCCO1 UJJLJRQIPMGXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 1
- 229910000404 tripotassium phosphate Inorganic materials 0.000 description 1
- 235000019798 tripotassium phosphate Nutrition 0.000 description 1
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
- 235000019801 trisodium phosphate Nutrition 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
本發明提供適於研磨具有包含III-V族化合物的層的研磨對象物,能夠抑制III-V族化合物的蝕刻,且能夠以高研磨速度研磨的研磨用組合物。本發明相關的研磨用組合物,其係用於研磨具有包含III-V族化合物的層的研磨對象物的用途的研磨用組合物,其包含:研磨粒、氧化劑、與陰離子性界面活性劑。
Description
本發明係關於研磨用組合物及使用該研磨用組合物的研磨方法及半導體基板的製造方法。
近幾年,隨著大型積體電路(LSI)的高積體化、高性能化,新穎的微細加工技術被持續開發。化學機械研磨(以下,單以CMP記述)法亦係其中之一,在LSI的製造步驟,特別在多層配線形成步驟的層間絕緣膜的平坦化、金屬插塞形成、鑲嵌線路(damascene線路)形成被頻繁利用的技術。該技術,例如,揭示於美國專利第4944836號說明書。鑲嵌線路,可簡化配線步驟,或提升良率及可靠度。
此外,作為減低電晶體的消耗電力或提升性能(動作特性)的技術之一,有進行使用載子遷移率較Si高的高遷移率材料(以下,有時單稱為「高遷移率材料」)的通道的研究。在使用如此的高遷移率材料而製作的提升載子傳輸特性的通道,由於可提升開(on)時的汲電流,故可得到充分的開電流,同時可降低電源電壓。該組合,可帶來在低的電力時之較高的金屬氧化物半導體場效電晶體(metal oxide semiconductor field-effect transistor,MOSFET)的性能。
高遷移率材料,有期待III-V族化合物、IV族化
合物、鍺(Ge)、僅由碳(C)形成的石墨烯等的適用,特別是III-V族化合物等被積極地研究。
使用高遷移率材料的通道,可研磨具有含有高遷移率材料的部分(以下,有時稱為高遷移率材料部分)與含有矽材料的部分(以下,有時稱為矽材料部分)的研磨對象物而形成。此時,要求將高遷移率材料部分以高研磨速度研磨加工成平滑的表面,並且抑制在研磨對象物的研磨後的表面發生因蝕刻所致之段差。例如,在日本特表2015-523716號公報(對應美國專利申請公開第2015/175845號說明書),揭示了化學機械研磨III-V材料的半導體裝置的製造方法。
但是,日本特表2015-523716號公報(對應美國專利申請公開第2015/175845號說明書)所記載的製造方法,有因III-V材料的過度溶解而發生凹陷的問題。
因此,本發明係以提供適於研磨具有包含III-V族化合物的層的研磨對象物,能夠抑制III-V族化合物的蝕刻,且能夠以高研磨速度研磨的研磨用組合物為目標。
為了解決上述課題,本發明者專心反覆研究。結果發現,藉由包含研磨粒、氧化劑、與陰離子性界面活性劑的研磨用組合物,可解決上述課題,而達至完成本發明。
本發明係用於研磨具有包含III-V族化合物的層的
研磨對象物的用途的研磨用組合物,其包含:研磨粒、氧化劑、與陰離子性界面活性劑。本發明相關的研磨用組合物,適於研磨具有包含III-V族化合物的層的研磨對象物,能夠抑制III-V族化合物的蝕刻,且能夠以高研磨速度研磨。
以本發明的研磨用組合物處理具有包含III-V族化合物的層的研磨對象物時,首先藉由氧化劑的作用,在包含III-V族化合物的層的表面形成氧化膜。由於形成的氧化膜表面為親水性,故陰離子性界面活性劑的親水基可迅速吸附。另一方面,陰離子性界面活性劑的疏水基,則藉由分子間的相互作用而自組裝排列。即,在氧化膜上形成疏水膜。該疏水膜發揮作為氧化膜的障礙的功能,而阻礙氧化劑或水進一步接觸氧化膜,因此可抑制III-V族化合物的蝕刻。此外,因為藉由疏水膜保護的氧化膜很脆弱,因此藉由研磨粒可容易地將其去除(即,能夠以高的研磨速度研磨)。因此,本發明相關的研磨用組合物能夠有效地研磨包含具有III-V族化合物的層的研磨對象物。並且,對於包含具有III-V族化合物的層的研磨對象物,能夠幾乎不會發生凹陷地以高研磨率選擇比研磨。在此,所謂「高研磨率選擇比」,係指在研磨對象物,III-V族化合物的部分的研磨速度比其他的部分(例如,矽材料的部分)的研磨速度高。
再者,上述機制係根據推測,本發明不應限定於上述機制。
在本說明書,若無特別提及,操作及物性等的測定,係在室溫(20~25℃)/相對濕度40~50%RH的條件測定。
[研磨對象物]
本發明相關的研磨用組合物,可用於研磨具有包含III-V族化合物的層的研磨對象物的用途。進一步而言,可使用於研磨該研磨對象物而製造基板(例如,半導體基板)的用途。
III-V族化合物,以選自由砷化鎵(GaAs)、磷化銦(InP)、砷化銦(InAs)、砷化鋁(AlAs)、砷化銦鎵(InGaAs)、磷砷化銦鎵(InGaAsP)、砷化鋁鎵(AlGaAs)及砷化銦鋁鎵(InAlGaAs)所組成之群之至少1種為佳,以GaAs為更佳。
本發明相關的研磨對象物,可具有包含矽材料的部分的層。作為矽材料,可列舉單體矽、矽化合物。再者,作為單體矽,可列舉,例如,單晶矽、多晶矽、非晶矽等。作為矽化合物,可列舉,例如,氮化矽(SiN)、氧化矽、碳化矽、矽酸四乙酯(TEOS)等。作為包含矽材料的層,亦可包含相對介電常數為3以下的低介電常數膜。
該等矽材料之中,以單晶矽、多晶矽、氮化矽、氧化矽,矽酸四乙酯為佳。
接著,詳細說明本發明相關的研磨用組合物的構成成分。
[陰離子性界面活性劑]
包含於本發明的研磨用組合物的陰離子性界面活性劑,包含疏水基、及在水中解離成陰離子的親水基,而抑制III-V族化合物的蝕刻。
本發明的陰離子性界面活性劑,作為親水基,係以包含選自由磷酸基或其鹽的基、羧基或其鹽的基、及磺酸基
或其鹽的基所組成之群之基為佳。其中係以至少含有磷酸基或其鹽的基及羧基或其鹽的基之中的一方為佳。將包含該基的陰離子性界面活性劑調配於研磨用組合物時,即使以高溫(40℃以上)進行研磨處理時,仍能夠抑制III-V族化合物的蝕刻。
陰離子性界面活性劑,係以包含經取代或非取代的碳數5以上、30以下的烷基及經取代或非取代的碳數6以上、50以下的芳基之中的至少一方作為疏水基取為佳。藉此,吸附於III-V族化合物的氧化膜上的陰離子性界面活性劑的疏水基,藉由分子間的相互作用(疏水性相互作用、π-π相互作用等)自組裝排列,促進在氧化膜上形成疏水膜。因此,疏水膜成為障礙,而阻礙氧化劑或水與氧化膜接觸,能夠抑制氧化膜的溶解,亦即III-V族化合物的蝕刻。
作為非取代的碳數5以上、30以下的烷基之例,可列舉戊基、異戊基、2-甲基丁基、1-甲基丁基、己基、異己基、3-甲基戊基、2-甲基戊基、1-甲基戊基、庚基、辛基、異辛基、2-乙基己基、3,7-二甲基辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十八烷基、二十烷基等。其中上述烷基的碳數,由研磨用組合物中的分散性及疏水膜的緻密性的觀點,以8以上、25以下為佳,以10以上、20以下為更佳,以12以上、15以下為進一步更佳。此外,由疏水膜的緻密性的觀點,烷基以直鏈狀為佳。
作為非取代的碳數6以上、50以下的芳基之例,可列舉苯基、萘基等。其中,上述芳基的碳數,由研磨用組合物中的分散性及疏水膜的緻密性的觀點,以6以上、40以下為
佳,以6以上、30以下為更佳,以6以上、20以下為進一步更佳,以苯基為特佳。可存在於上述芳基的取代基,並無特別限制,以苄基烷基(-R-C6H5,R係碳數1以上、4以下的伸烷基)為佳,以具有分枝鏈的苄基烷基為更佳,以α-甲基苄基(-CH(CH3)-C6H5)為進一步更佳。
由抑制蝕刻且提升研磨速度的觀點,本發明的陰離子性界面活性劑以包含聚氧伸烷基為佳。聚氧伸烷基,係以-(AO)n-表示的基,此時,上述A,以經取代或非取代的碳數2以上、4以下的伸烷基為佳,由進一步提升研磨速度的觀點,以經取代或非取代的伸乙基更佳。此外,上述n,係氧伸烷基的平均加成莫耳數,以1以上、50以下為佳,以1以上、30以下為更佳,以1以上、20以下為進一步更佳,以1以上、10以下為特佳。因此,在本發明的較佳的一實施形態,上述聚氧伸烷基,係以-(AO)n-表示之基,此時,上述A,係經取代或非取代的碳數2以上、4以下的伸烷基,且,上述n係氧伸烷基的平均加成莫耳數,而為1以上、50以下。其中,由研磨速度的進一步提升、或在高溫(40℃以上)的研磨處理之III-V族化合物的蝕刻的進一步抑制的觀點,上述n,以2以上、10以下為佳,以2以上、7以下為更佳,以2以上、5以下為進一步更佳,以2以上、3以下為特佳。因此,在本發明的較佳的一實施形態,上述A,係經取代或非取代的伸乙基,且,上述n為2以上、10以下。
作為含有羧基或其鹽的基的陰離子性界面活性劑之例,可列舉月桂酸、聚氧乙烯月桂基醚醋酸、聚氧乙烯十三
烷基醚醋酸、聚氧乙烯辛基醚醋酸、聚氧乙烯月桂基醚醋酸鈉、聚氧乙烯月桂基醚醋酸銨、聚氧乙烯十三烷基醚醋酸鈉、聚氧乙烯十三烷基醚醋酸銨、聚氧乙烯辛基醚醋酸鈉、聚氧乙烯辛基醚醋酸銨、月桂酸鉀等。該等之中,以聚氧乙烯月桂基醚醋酸或月桂酸鉀為佳。該等可以1種單獨使用,亦可組合2種以上使用。
作為包含磷酸基或其鹽的基的陰離子性界面活性劑之例,可列舉月桂基磷酸、聚氧乙烯月桂基醚磷酸、聚氧乙烯烷基醚磷酸、二聚氧乙烯烷基醚磷酸、聚氧乙烯月桂基醚磷酸鈉、聚氧乙烯油基醚磷酸鈉、聚氧乙烯十六烷基醚磷酸鈉、聚氧乙烯烷基醚磷酸鉀、聚氧乙烯芳基苯基醚磷酸三乙醇胺鹽等。該等之中,以月桂基磷酸、聚氧乙烯烷基醚磷酸、二聚氧乙烯烷基醚磷酸或聚氧乙烯芳基苯基醚磷酸三乙醇胺鹽為佳。該等可以1種單獨使用,亦可組合2種以上使用。
作為含有磺酸基或其鹽的基的陰離子性界面活性劑之例,可列舉聚氧乙烯辛基磺酸、聚氧乙烯十二烷基磺酸、聚氧乙烯十六烷基磺酸、聚氧乙烯辛基苯磺酸、聚氧乙烯十二烷基苯磺酸;聚氧乙烯辛基磺酸鈉、聚氧乙烯十二烷基磺酸鈉、聚氧乙烯十六基磺酸鈉、十二烷基二苯醚二磺酸、十二烷基二苯醚二磺酸鈉、十二烷基苯磺酸、十二烷基苯磺酸鈉等。該等之中,以十二烷基二苯醚二磺酸鈉或十二烷基苯磺酸為佳。該等可以1種單獨使用,亦可組合2種以上使用。
陰離子性界面活性劑,可使用市售品,亦可使用合成品。
研磨用組合物中的陰離子性界面活性劑的含量的上限,相對於組合物全體的質量,以2000ppm以下為佳,以1000ppm以下為更佳,以500ppm以下為進一步更佳,以300ppm以下為特佳。若在該範圍,能夠良好地兼顧III-V族化合物的蝕刻的抑制、與研磨速度的提升。此外,研磨用組合物中的陰離子性界面活性劑的含量的下限,相對於組合物全體的質量,以10ppm以上為佳,以50ppm以上為更佳,以100ppm以上為進一步更佳。若在該範圍,可使陰離子性界面活性劑在氧化膜上的吸附密度高,而形成緻密的疏水膜。因此,能夠抑制III-V族化合物的蝕刻。
以氧化劑的含量為100質量份時,研磨用組合物中的陰離子性界面活性劑的含量的上限,以300質量份以下為佳,以100質量份以下為更佳,以50質量份以下為進一步更佳,以20質量份以下為特佳。此外,以氧化劑的含量為100質量份時,研磨用組合物中的陰離子性界面活性劑的含量的下限,以0.1質量份以上為佳,以0.3質量份以上為更佳,以0.5質量份以上為進一步更佳。若在,可形成充分厚度的氧化膜,同時使陰離子性界面活性劑迅速地吸附在該氧化膜表面上而形成疏水膜。因此,能夠抑制III-V族化合物的蝕刻,且能夠提升研磨速度。
[研磨粒]
本發明的研磨用組合物所包含的研磨粒,具有將研磨對象物機械性研磨的作用,可提升因研磨用組合物所致之研磨對象物的研磨速度。
研磨粒,可為無機粒子、有機粒子及有機無機複合粒子的任一者。作為無機粒子之例,可列舉二氧化矽、氧化鋁、二氧化鈰、二氧化鈦等的金屬氧化物所組成的粒子、氮化矽粒子、碳化矽粒子、氮化硼粒子。作為有機粒子之例,可列舉聚甲基丙烯酸甲酯(PMMA)粒子。其中,以二氧化矽為佳,以膠態二氧化矽為特佳。該等可以單獨使用,亦可組合2種以上使用。此外,研磨粒,可使用市售品,亦可使用合成品。
本發明的研磨粒亦可被表面修飾,研磨用組合物為酸性時(例如,pH為6.0以下時),以經表面修飾的研磨粒為特佳。通常的膠態二氧化矽,由於在酸性條件下的界達電位(Zeta potential)的值接近零,所以在酸性條件下二氧化矽粒子彼此不會互相電性排斥而容易引起凝集。對此,以即使在酸性條件亦具有較大的負值的界達電位(Zeta potential)之方式進行表面修飾的研磨粒,在酸性條件下會互相強烈排斥而可良好地分散,其結果,可使研磨用組合物的保存穩定性提升。如此的經表面修飾的研磨粒,例如,能夠藉由將鋁、鈦或鋯等的金屬或該等的氧化物與研磨粒混合,使其摻雜於研磨粒的表面而得到。其中,以將有機酸固定化的膠態二氧化矽為特佳。有機酸對研磨用組合物中所包含的膠態二氧化矽的表面的固定化,例如,能夠藉由使有機酸的官能基化學性地鍵結於膠態二氧化矽的表面而進行。僅僅只是使膠態二氧化矽與有機酸共存,並無法達成有機酸對膠態二氧化矽的固定化。使有機酸的一種的磺酸固定化於膠態二氧化矽,例如,能夠以「Sulfonic acid-functionalized silica through quantitative oxidation of
thiol groups」Chem.Commun.246-247(2003)所記載的方法進行。具體而言,使3-巰基丙基三甲氧基矽烷等的具有硫醇基的矽烷偶合劑,與膠態二氧化矽偶合之後,以過氧化氫將硫醇基氧化,藉此可得到將磺酸固定化於表面的膠態二氧化矽。或者,將羧酸對膠態二氧化矽固定化,例如,能夠以「Novel Silane Couping Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel」,Chemistry Letters 3,228-229(2000)所記載的方法進行。具體而言,使包含光反應性2-硝基苄基酯的矽烷偶合劑,與膠態二氧化矽偶合之後,藉由光照射,而可得到將羧酸固定化於表面的膠態二氧化矽。
研磨粒的平均一次粒徑的下限,以1nm以上為佳,以3nm以上為更佳,以5nm以上為進一步更佳,以10nm以上為特佳。此外,研磨粒的平均一次粒徑的上限,以500nm以下為佳,以100nm以下為更佳,以70nm以下為進一步更佳,以50nm以下為特佳。若在該範圍,則可提升因研磨用組合物所致之研磨對象物的研磨速度,此外,能夠抑制使用研磨用組合物研磨之後的研磨對象物的表面因研磨而產生損傷(刮痕)。再者,研磨粒的平均一次粒徑,例如,能夠根據BET法所測定的研磨粒的比表面積而計算。
研磨粒的平均二次粒徑的上限,以500nm以下為佳,更佳為400nm以下,進一步更佳為300nm以下,特佳為100nm以下。此外,研磨粒的平均二次粒徑的下限,以10nm以上為佳,更佳為30nm以上,進一步更佳為50nm以上,特
佳為60nm以上。研磨粒的平均二次粒徑的值,例如,能夠以雷射光散射法測定。
將研磨粒的平均二次用粒徑的值除以平均一次粒徑的值而得到的研磨粒的平均結合度,以1以上為佳,更佳為1.2以上。隨著研磨粒的平均結合度變大,有提升因研磨用組合物所致之研磨對象物的去除速度的優點。此外,研磨粒的平均結合度,以5以下為佳,更佳為4以下,進一步更佳為3以下,隨著研磨粒的平均結合度變小,使用研磨用組合物研磨研磨對象物,容易得到表面缺陷少的研磨面。
研磨用組合物中的研磨粒的含量的下限,相對於組合物全體的質量,以0.01質量%以上為佳,以0.05質量%以上為更佳,以0.1質量%以上為進一步更佳,以0.5質量%以上為特佳。此外,研磨用組合物中的研磨粒的含量的上限,相對於組合物全體的質量,以50質量%以下為佳,以20質量%以下為更佳,以10質量%以下為進一步更佳,以5質量%以下為特佳。若在該範圍,可提升研磨對象物的研磨速度,此外,能夠抑制研磨用組合物的成本,且能夠更加控制使用研磨用組合物研磨在研磨對象物的表面發生碟形凹陷(dishing)等的段差缺陷。再者,在研磨用組合物中混合存在2種以上的研磨粒時,含量係其合計量。
[氧化劑]
本發明的研磨用組合物所包含的氧化劑,可將研磨對象物所包含的III-V族化合物氧化而生成脆弱的氧化膜,提升因研磨粒所致之研磨效率。
可使用的氧化劑,可列舉,例如,過氧化氫、過醋酸、過碳酸鹽、過氧化尿素、過氯酸鹽、氯酸鹽、亞氯酸鹽、次氯酸鹽等的鹵素元素的含氧酸鹽及過硫酸鈉、過硫酸鉀及過硫酸銨等的過硫酸鹽。其中,由提升研磨速度(促進氧化膜的形成)的觀點,以過硫酸鹽及過氧化氫為佳,猶在水溶液中的穩定性及對環境負荷的觀點,以過氧化氫為特佳。
研磨用組合物中的氧化劑的含量的下限,相對於組合物1kg,以0.1g以上為佳,以0.2g以上為更佳,以0.5g以上為進一步更佳。此外,研磨用組合物中的氧化劑的含量的上限,相對於組合物1kg,以100g以下為佳,以50g以下為更佳,以30g以下為進一步更佳,以20g以下為特佳。若在該範圍,能夠抑制III-V族化合物的蝕刻,且能夠提升研磨速度。因此,可有效率地加工具有包含III-V族化合物的層的研磨對象物。
[分散劑或溶劑]
本發明的研磨用組合物,通常使用可用於分散或溶解各成分的分散劑或溶劑。分散劑或溶劑,可列舉有機溶劑、水等,該等之中,包含水為佳。由防止阻礙其他成分的作用的觀點來看,以盡可能不含雜質的水為佳。具體而言,較佳為以離子交換樹脂去除雜質離子之後,經過濾器去除異物的純水或超純水、或蒸餾水。
[其他的成分]
本發明的研磨用組合物,視需要而可進一步包含金屬防蝕劑、防腐劑、防霉劑、鹽化合物、水溶性高分子、用以溶解難
溶性的有機物的有機溶劑等的其他的成分。以下,說明較佳的其他的成分的金屬防蝕劑、防腐劑及防霉劑、鹽化合物。
(金屬防蝕劑)
藉由在研磨用組合物中加入金屬防蝕劑,能夠更加抑制因使用研磨用組合物的研磨所致之線路邊的凹陷的發生。此外,能夠更加抑制在使用研磨用組合物研磨之後的研磨對象物的表面發生碟形凹陷。
可使用的金屬防蝕劑,並無特別限制,較佳的是雜環化合物或界面活性劑。雜環化合物中的雜環的員數,並無特別限定。此外,雜環化合物可為單環化合物,亦可為具有縮合環的多環化合物。該金屬防蝕劑,可以單獨或混合2種以上使用。此外,該金屬防蝕劑,可使用市售品,亦可使用合成品。
作為可使用於作為金屬防蝕劑的雜環化合物的例,可列舉,例如,吡咯化合物、吡唑化合物、咪唑化合物、三唑化合物、四唑化合物、吡啶化合物、吡嗪化合物、噠嗪化合物、氮茚化合物、吲哚嗪化合物、吲哚化合物、異吲哚化合物、吲唑化合物、嘌呤化合物、喹嗪化合物、喹啉化合物、異喹啉化合物、萘啶化合物、酞嗪化合物、喹喔啉化合物、喹唑啉化合物、噌啉化合物、蝶啶化合物、噻唑化合物、異噻唑化合物、噁唑化合物、異噁唑化合物、呋咱化合物等的含氮雜環化合物。
(防腐劑及防霉劑)
作為可用於本發明的研磨用組合物的防腐劑及防霉劑之例,可列舉2-甲基-4-異噻唑啉-3-酮、或5-氯-2-甲基-4-異噻唑
啉-3-酮等的異噻唑啉系防腐劑、對羥基苯甲酸酯類、及苯氧基乙醇等。該等防腐劑及防霉劑,可以單獨或混合2種以上使用。
(鹽化合物)
作為可用於本發明的鹽化合物之例,可列舉硝酸鈉、硝酸鉀、硝酸銨、硝酸鎂、硝酸鈣、亞硝酸鈉、亞硝酸鉀、醋酸鋰、醋酸鈉、醋酸鉀、醋酸銨、醋酸鈣、乳酸鈣、苯甲酸鋰、苯甲酸鈉、苯甲酸鉀、碳酸鋰、碳酸鈉、碳酸鉀、碳酸鎂、碳酸鈣、碳酸氫鋰、碳酸氫鈉、碳酸氫鉀、碳酸銨、重碳酸鈉、硫酸鈉、硫酸鉀、硫酸銨、硫酸鈣、硫酸鎂、亞硫酸鈉、亞硫酸鉀、亞硫酸鈣、亞硫酸鎂、硫代硫酸鉀、硫酸鋰、硫酸鎂、硫代硫酸鈉、亞硫酸氫鈉、硫酸氫鈉、硫酸氫鉀、草酸二鈉、草酸二鉀、草酸銨、檸檬酸銨、戊二酸二鈉、氟化鋰、氟化鈉、氟化鉀、氟化鈣、氟化銨、氯化鉀、氯化鈉、氯化銨、氯化鈣、溴化鉀、溴化鈉、溴化銨、溴化鈣、碘化鈉、碘化鉀、三碘化鉀、碘化鈣、磷酸三鋰、磷酸三鉀、磷酸三鈉、磷酸三銨、磷酸一氫鈉、磷酸一氫鉀、磷酸二氫鈉、磷酸二氫鉀、磷酸二氫銨等。該等鹽化合物可以單獨或混合2種以上。
[研磨用組合物的pH]
研磨用組合物的pH的上限,並無特別限定,以未滿11.0為佳。若在該範圍,則可防止研磨粒溶解,因而可提升研磨粒的穩定性。此外,研磨用組合物的pH的下限,並無特別限制,以2.5以上為佳。若在該範圍,則可提升在研磨用組合物之研磨粒的分散性。再者,研磨用組合物的pH的上限,以未滿10.0為佳,以9.1以下為更佳,以8.0以下為進一步更佳,以7.0
以下為特佳。此外,研磨用組合物的pH的下限,以超過3.0為佳,以4.0以上為更佳,以5.0以上為進一步更佳。若在該範圍,在室溫(25℃)及/或高溫(40℃以上)下研磨時,能夠良好地抑制III-V族化合物的蝕刻。
為了將研磨用組合物的pH調整為所望的值,亦可使用pH調整劑。pH調整劑,可使用習知的酸、鹼或該等的鹽。作為可使用於作為pH調整劑的酸的具體例,可列舉,例如,鹽酸、硫酸、硝酸、氟酸、硼酸、碳酸、次磷酸、亞磷酸、及磷酸等的無機酸,或蟻酸、醋酸、丙酸、丁酸、戊酸、2-甲基丁酸、己酸、3,3-二甲基丁酸、2-乙基丁酸、4-甲基戊酸、庚酸、2-甲基己酸、辛酸、2-乙基己酸、苯甲酸、羥基醋酸、柳酸、甘油酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、馬來酸、磷苯二甲酸、蘋果酸、酒石酸、檸檬酸、乳酸、二甘醇酸、2-呋喃甲酸、2,5-呋喃二甲酸、3-呋喃甲酸、2-四氫呋喃甲酸、甲氧基醋酸、甲氧基苯基醋酸、及苯氧基醋酸等的有機酸。使用無機酸作為pH調整劑時,特別是硫酸、硝酸、磷酸等,由提升研磨速度的觀點而言乃是特佳,使用有機酸作為pH調整劑時,以乙醇酸、琥珀酸、馬來酸、檸檬酸、酒石酸、蘋果酸、葡糖酸及衣康酸等為佳。此外,作為可使用於作為pH調整劑的鹼,可列舉脂肪族胺、芳香族胺等的胺、氫氧化四級銨等的有機鹼、氫氧化鉀等的鹼金屬的氫氧化物、第2族元素的氫氧化物、及氨等。該等之中,由取得容易性的觀點,以硝酸、氫氧化鉀、碳酸鉀、磷酸、硫酸、氫氧化鈉為佳。
[研磨用組合物的製造方法]
本發明的研磨用組合物的製造方法,並無特別限制,例如,能夠藉由將構成本發明的研磨用組合物的各成分,在水中攪拌混合而得。此外,將各成分混合時的溫度,並無特別限制,以10℃以上、40℃以下為佳,為了提高溶解速度,亦可加熱。此外,混合時間,亦無特別限制。
[研磨方法及半導體基板的製造方法]
如上所述,本發明的研磨用組合物,可合適地用於研磨具有金屬線路層的研磨對象物。因此,本發明提供一種研磨方法,其係以本發明的研磨用組合物研磨具有包含III-V族化合物的層的研磨對象物。此外,使用該研磨方法研磨的研磨對象物,可合適地使用於作為半導體基板。因此,本發明提供一種半導體基板的製造方法,其包含以上述研磨方法研磨具有包含III-V族化合物的層的研磨對象物的步驟。
作為研磨裝置,可使用裝有保持具有研磨對象物的基板等的夾具與可改變旋轉數的馬達等,具有可黏貼研磨墊(研磨布)的研磨定盤的一般的研磨裝置。上述研磨墊,可無特別限制地使用一般的不織布、聚氨酯及多孔質氟樹脂等。研磨墊,以施行可儲留研磨用組合物的溝加工為佳。
研磨條件,並無特別限制,例如,研磨定盤的旋轉速度,以10rpm以上、500rpm以下為佳,對具有研磨對象物的基板施加的壓力(研磨壓力),以0.5psi以上、10psi以下(3.45kPa以上、69kPa以下)為佳。將研磨用組合物供給至研磨墊的方法,並無特別限制,可使用,例如,以幫浦等連續供給的方法。其供應量,並無限制,較佳是將研磨墊的表面總是以
本發明的研磨用組合物覆蓋。
研磨結束之後,將基板在流水中洗淨,以旋轉乾燥器等,將附著在基板上的水滴甩掉而乾燥,以得到具有金屬線路層及障礙層的基板。
本發明相關的研磨用組合物可為一液型,亦可為將研磨用組合物的一部分或全部以任意混合比率混合的多液型。此外,使用具有複數研磨用組合物的供給路徑的研磨裝置時,亦可使用預先調整的2種以上的研磨用組合物,使研磨用組合物在研磨裝置上混合。
此外,本發明相關的研磨用組合物,可為原液的形態,亦可為將研磨用組合物的原液以水稀釋而調製。研磨用組合物為二液型時,混合及稀釋的順序為任意,可列舉,例如,將一方的組合物以水稀釋之後將該等混合,或是在混合的同時以水稀釋,此外,將混合的研磨用組合物以水稀釋等情況。
使用以下的實施例及比較例更詳細地說明本發明。惟,並非將本發明的技術範圍限制在以下的實施例。
(實施例1~17、比較例1~5)
將下述研磨粒及界面活性劑,以相對於研磨用組合物全體成為下述表2所示的含量添加。此外,將作為氧化劑的過氧化氫水溶液(31質量%),以相對於研磨用組合物1kg成為下述表2所示的添加量添加,在25℃的水中攪拌混合,調製實施例1~13及比較例1~5的研磨用組合物。研磨用組合物的pH,係藉由加入氫氧化鉀(KOH)或硝酸(HNO3)而調整,以pH計確認。
再者,使用如下之物作為研磨粒:
研磨粒1:沒有表面修飾的膠態二氧化矽(平均一次粒徑30nm,平均二次粒徑70nm)
研磨粒2:將磺酸基固定於表面的膠態二氧化矽(平均一次粒徑30nm,平均二次粒徑70nm)。
此外,使用如下之物作為界面活性劑:
A:聚氧乙烯烷基醚磷酸(EO平均加成莫耳數=3,碳數12以上、15以下的直鏈烷基)
B:二聚氧乙烯烷基醚磷酸(EO平均加成莫耳數=2,碳數12以上、15以下的直鏈烷基)
C:聚氧乙烯芳基苯基醚磷酸三乙醇胺鹽(竹本油脂株式會社製,Newcalgen FS-3AQ)
D:月桂酸鉀
E:聚氧乙烯月桂基醚醋酸(EO平均加成莫耳數=3)
F:聚氧乙烯月桂基醚醋酸(EO平均加成莫耳數=5)
G:聚氧乙烯月桂基醚醋酸(EO平均加成莫耳數=10)
H:月桂基磷酸
I:十二烷基二苯醚二磺酸鈉
J:十二烷基苯磺酸
K:聚氧乙烯烷基醚(第一工業製藥株式會社製,NOIGEN(註冊商標)ET-95)
L:聚氧乙烯去水山梨醇油酸酯(竹本油脂株式會社製,PIONIN D-945)
M:二癸基甲基聚氧乙基丙酸銨(竹本油脂株式會社製,
PIONIN B-0012-H)。
[研磨速度]
關於GaAs基板,使用實施例1~17及比較例1~5的研磨用組合物,求取以下述表1所示的研磨條件研磨一定時間時的研磨速度。GaAs基板,係使用試片化成3cm×3cm的大小。
GaAs基板的研磨速度,係由研磨前後的質量變化算出研磨量,將該研磨量除以研磨時間與GaAs的比重,而測定GaAs基板的研磨速度。
[表1]
<研磨條件>
研磨裝置:單面CMP研磨機(ENGIS)
研磨墊:聚氨酯製墊IC-1010
研磨壓力:1.5psi(約10.3kpa)
研磨定盤旋轉數:60rpm
載具轉數:40rpm
研磨用組合物的流量:每分鐘100毫升
研磨時間:300秒
[溶解速度]
GaAs基板的溶解速度,係在使用攪拌子而以300rpm的轉速旋轉的研磨用組合物中,將3cm×3cm大小的GaAs基板,以25℃或43℃浸漬20分鐘。
GaAs基板的溶解速度,係以浸漬前後的質量變化算出溶解量,將該溶解量除以浸漬時間與GaAs的比重,而測定GaAs基板的溶解速度。
[表2]
由表2的結果,可知關於實施例1~17的研磨用組合物,可抑制GaAs的蝕刻,並且可提升研磨速度。本發明相關的研磨用組合物,能夠有效地研磨具有包含III-V族化合物的層的研磨對象物。
本發明係基於西元2016年3月25日申請之日本專利申請第2016-061571號申請案,且其全部內容以參考資料而引用於本文。
Claims (8)
- 一種研磨用組合物,其係用於研磨具有包含III-V族化合物的層的研磨對象物的用途的研磨用組合物,其包含:研磨粒、氧化劑、與陰離子性界面活性劑。
- 如申請專利範圍第1項所述的研磨用組合物,其中上述III-V族化合物,係選自由GaAs、InP、InAs、AlAs、InGaAs、InGaAsP、AlGaAs及InAlGaAs所組成之群之至少1種。
- 如申請專利範圍第1或2項所述的研磨用組合物,其中上述陰離子性界面活性劑,係含有磷酸基或其鹽的基及羧基或其鹽的基之中的至少一方。
- 如申請專利範圍第1至3項中任一項所述的研磨用組合物,其中上述陰離子性界面活性劑,包含聚氧伸烷基。
- 如申請專利範圍第4項所述的研磨用組合物,其中上述聚氧伸烷基,係以-(AO)n-表示之基,此時,上述A係經取代或非取代的碳數2以上、4以下的伸烷基,且上述n係氧伸烷基的平均加成莫耳數,而為1以上、50以下。
- 如申請專利範圍第5項所述的研磨用組合物,其中上述A係經取代或非取代的伸乙基,且上述n係2以上、10以下。
- 一種研磨方法,以申請專利範圍第1至6項中任一項所述的研磨用組合物研磨具有包含III-V族化合物的層的研磨對象物。
- 一種半導體基板的製造方法,包括以申請專利範圍第7項所述的研磨方法研磨具有包含III-V族化合物的層的研磨對象物的步驟。
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JP6077209B2 (ja) | 2011-11-25 | 2017-02-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN104364331A (zh) | 2012-05-23 | 2015-02-18 | 巴斯夫欧洲公司 | 包括在包含特定非离子表面活性剂的化学机械抛光组合物存在下进行iii-v族材料的化学机械抛光的制造半导体装置的方法 |
CN105229098B (zh) | 2013-05-15 | 2017-08-11 | 巴斯夫欧洲公司 | 包含n,n,n',n'‑四(2‑羟基丙基)乙二胺或甲磺酸的化学机械抛光组合物 |
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2017
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- 2017-03-06 US US16/084,724 patent/US10759969B2/en active Active
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CN114290229A (zh) * | 2021-12-23 | 2022-04-08 | 北京通美晶体技术股份有限公司 | 一种半导体晶片的抛光方法及磷化铟晶片 |
CN114290229B (zh) * | 2021-12-23 | 2023-02-24 | 北京通美晶体技术股份有限公司 | 一种半导体晶片的抛光方法及磷化铟晶片 |
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US20190071588A1 (en) | 2019-03-07 |
US10759969B2 (en) | 2020-09-01 |
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