TW201735106A - 半導體元件的製造方法 - Google Patents
半導體元件的製造方法 Download PDFInfo
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- TW201735106A TW201735106A TW105140175A TW105140175A TW201735106A TW 201735106 A TW201735106 A TW 201735106A TW 105140175 A TW105140175 A TW 105140175A TW 105140175 A TW105140175 A TW 105140175A TW 201735106 A TW201735106 A TW 201735106A
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Classifications
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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Abstract
一種半導體元件的製造方法,包括:在介電層上方定位圖案化罩幕,其中介電層包括低溫固化聚醯亞胺;在I-line步進對準曝光機內以I-line波長藉由圖案化罩幕來曝光介電層的第一表面;以及顯影介電層以形成開口。
Description
本發明是有關於一種半導體元件的製造方法。
由於不同電子元件(例如是電晶體、二極體、電阻、電容等)的積體密度持續地增進,半導體工業經歷了快速成長。大部分而言,積體密度的增進是來自於最小特徵尺寸(feature size)上不斷地縮減(例如,縮減半導體製程節點(node)至副20奈米節點(sub-20nm node)),這允許更多的較小元件整合到一給定區域內。隨著微型化、高速、高頻寬、低耗電率、低延遲的需求逐漸成長,更小且更有創造性的半導體晶粒封裝技術的需求也提升。
隨著半導體技術推進,堆疊且連接的半導體元件被整合在一起以進一步地縮減半導體元件的尺寸。在堆疊式半導體元件中,主動電路例如是邏輯電路、記憶體電路、處理器電路或類似的電路的至少部分被製造在分離的多個基板上,接著實體且電性連接在一起,以形成功能性元件。這樣的連接製程利用精密的技術以達到所欲的改進。
本發明的一種半導體元件的製造方法,包括下列步驟,在介電層上方定位圖案化罩幕,其中介電層包括低溫固化聚醯亞胺;在I-line步進對準曝光機內以I-line波長藉由圖案化罩幕來曝光介電層的第一表面;以及顯影介電層以形成開口。
以下揭露內容提供用於實施所提供的標的之不同特徵的許多不同實施例或實例。以下所描述的構件及配置的具體實例是為了以簡化的方式傳達本揭露為目的。當然,僅僅為實例而非用以限制。此外,本揭露在各種實例中可使用相同的元件符號及/或字母來指代相同或類似的部件。元件符號的重複使用是為了簡單及清楚起見,且並不表示所欲討論的各個實施例及/或配置本身之間的關係。
另外,為了易於描述附圖中所繪示的一個構件或特徵與另一組件或特徵的關係,本文中可使用例如「在。。。下」、「在。。。下方」、「下部」、「在…上」、「在…上方」、「上部」及類似術語的空間相對術語。除了附圖中所繪示的定向之外,所述空間相對術語意欲涵蓋元件在使用或操作時的不同定向。設備可被另外定向(旋轉90度或在其他定向),而本文所用的空間相對術語相應地作出解釋。
此處所揭露的實施例是採用具體用語進行揭露。其他實施例考慮到其他應用,此領域具有通常知識者在閱讀本揭露內容之後已經可以輕易地聯想到其他應用。值得注意的是,此處所揭露的實施例並無必要說明所有出現於結構中的元件或特徵。舉例而言,單個元件的複數型態可能於圖式中省略,例如單個元件的說明將足以傳達多個實施例中的不同樣態。此外,此處所討論的方法實施例可依照特定的順序進行;然而,其他方法實施例亦可依照任何一種符合邏輯的順序進行。
請參閱圖1,其顯示第一載具基板101及位於第一載具基板101上的黏著層103、聚合物層105及第一種子層107。第一載具基板101例如包括矽基底材料,如玻璃、氧化矽,或其他材料如氧化鋁或這些材料的組合。第一載具基板101是平面狀以提供如第一半導體元件201及第二半導體元件301(未繪示於圖1但在圖2與圖3中繪示且說明)的半導體元件附接。
黏著層103被配置在第一載具基板101上以協助重疊結構(例如,聚合物層105)的黏接。在一實施例中,黏著層103可包括紫外光膠,其在暴露於紫外光下會喪失黏性。然而,其他形式的黏劑,如壓力感測黏劑(pressure sensitive adhesives)、輻射固化黏劑(radiation curable adhesives)、環氧化物或上述的結合也可以被使用。黏著層103可以半液態或是膠態的形式被放置在第一載具基板101上,而可在壓力下變形。
聚合物層105被配置在黏著層103上,且一旦例如是第一半導體元件201及第二半導體元件301被附接,聚合物層105用來對第一半導體元件201及第二半導體元件301提供保護。在一實施例中,聚合物層105可以是正型材料(positive tone material),如聚苯并噁唑(polybenzoxazole,PBO,如HD8820材料),但任何適合的材料(如聚醯亞胺(polyimide)或聚醯亞胺衍生物)可被使用。聚合物層105可例如是透過旋轉塗佈製程(spin-coating process)配置出約為0.5微米至10微米的厚度,例如是5微米,但其他適合的方法與厚度也可以被使用。
第一種子層107被形成在聚合物層105上。在一實施例中,第一種子層107是導電材料的薄層,其有助於在接續的製造步驟中較厚的層的形成。第一種子層107可包括大約是1000(埃米Å)厚的鈦層,接著大約是5000(埃米Å)厚的銅層。第一種子層107可根據所欲得到的材料透過例如是透過濺鍍、蒸鍍或是電漿輔助化學氣相沈積的製程所形成。第一種子層107可被形成在約在0.3微米至1微米之間的厚度範圍,如大約是0.5微米。
圖1也繪示第一種子層107上的光阻109的配置與圖案化。在一實施例中,光阻109例如可透過旋轉塗佈的技術被配置在第一種子層107上,而形成大約是介於50微米至250微米之間的高度,如大約是120微米。接著,光阻109可被圖案化,透過曝露在圖案化能量源(如圖案化光源)的方式,誘發化學反應,從而誘使光阻109在暴露於圖案化光源的部位發生物理變化。開發者接著依據需要的圖案,利用被曝光的光阻109會發生物理變化,選擇性地移除光阻109曝光的部位或是未曝光的部位。
在一實施例中,光阻109所形成的圖案是多個貫孔111的圖案。貫孔111被形成在接著要附接的這些元件(如第一半導體元件201與第二半導體元件301)的不同側。但任何合適的貫孔111的圖案配置均可被採用,例如貫孔111可以位在會使第一半導體元件201與第二半導體元件301配置在貫孔111的相對兩側的位置。
在一實施例中,貫孔111被形成在光阻109內。在一實施例中,貫孔111包括一或多個導電材料,如銅、鎢或其他導電材料,且例如可透過電鍍(electroplating)、無電電鍍(electroless plating)或其他方形成。在一實施例中,其使用電鍍製程,其中第一種子層107及光阻109被浸入電鍍液中。第一種子層107的表面電性連接至外部的直流電源的負極,以使第一種子層107作為電鍍製程的陰極。固態導電陽極(如銅陽極)也被浸入於電解液且被連接至直流電源的正極。來自於陽極的原子溶入電解液中,陰極(例如第一種子層107)獲得溶入的原子,從而對光阻109的開口中第一種子層107所外露的導電區域電鍍。
一旦透過光阻109與第一種子層107而形成貫孔111,光阻109可使用適當的移除方法來被移除(未繪示於圖1,但可在下面的圖3中看到)。在一實施例中,電漿灰化(plasma ashing)製程可被使用來移除光阻109,據此光阻109的溫度會增加,直到光阻109發生熱降解而被移除。然而,任何適當的製程,也可以使用如濕式剝離(wet strip)的方式。移除光阻109可使得第一種子層107與光阻109重疊的部分外露。
第一種子層107的重疊於光阻109的部分外露之後,可對此部分進行移除(未繪示於圖1,但在下面的圖3中可見)。在一實施例中,第一種子層107外露的部分(例如,未被貫孔111覆蓋的部分)可透過例如是濕式或是乾式蝕刻的方式被移除。例如,在乾式蝕刻製程中,利用貫孔111作為罩幕,反應物可直接對第一種子層107蝕刻。在其他的實施例中,蝕刻劑可被噴塗或用別的方法放入而接觸第一種子層107,以移除第一種子層107外露的部分。在第一種子層107外露的部位被蝕刻之後,部分的聚合物層105外露於貫孔111之間的位置。
圖2繪示將在貫孔111內附接至聚合物層105的第一半導體元件201(未繪示於圖2,但繪示且描述於圖3)。在一實施例中,第一半導體元件201包括第一基板203、多個第一主動元件(未繪示)、多個第一金屬化(metallization)層205、多個第一接墊207、第一鈍化層211及多個第一外連接件209。第一基板203可包括整塊矽、摻雜或不摻雜或是絕緣層上矽(silicon-on-insulator,SOI)基板的主動層。一般來說,絕緣層上矽(SOI)基板包括如矽、鍺、矽鍺、絕緣層上矽、絕緣層上矽鍺的半導體材料層或其組合。其他包括多層基板、梯度(gradient)基板或混合式(hybrid orientation)基板的基板也可被使用。
第一主動元件包括主動元件與被動元件(如電容器、電阻、電感或類似元件)的廣泛變化,其可被設計成用來產生第一半導體元件201欲有的結構上或功能上的需求。第一主動元件可使用任何適當的方法形成在第一基板203內或是形成在第一基板203上。
第一金屬化層205被形成在第一基板203與第一主動元件上,且被設計為連接於多種主動元件以形成功能性電路(functional circuitry)。在一實施例中,第一金屬化層205被形成在交替的介電材料層與導電材料層,且可透過適當的方法(如沉積、鑲嵌(damascene)、雙鑲嵌等)形成。在一實施例中,可有四層金屬化層被至少一中間介電層(interlayer dielectric layer,ILD)而分離於第一基板203,但第一金屬化層205的確切數量決定於第一半導體元件201的設計。
第一接墊207可被形成在第一金屬化層205上且電性連接於第一金屬化層205。第一接墊207可包括鋁,但其他如銅等材料也可以被使用。第一接墊207可利用沉積的方式形成,如濺鍍,以形成金屬層(未繪示),且金屬層的一部分可透過適當的方法被移除(如微影罩幕與蝕刻)以形成第一接墊207。然而,也可以採用其他適當的製程來形成第一接墊207。第一接墊207的厚度可大約介於0.5微米與4微米之間,例如大約是1.45微米。
第一鈍化層211可形成在第一基板203上,且在第一金屬化層205及第一接墊207上方。第一鈍化層211可由一個或多個適當的介電材料形成如聚苯并噁唑(PBO),但任何適合的材料,如聚醯亞胺或聚醯亞胺衍生物也可被使用。第一鈍化層211可透過例如是旋轉塗佈的方法來配置,厚度大約介於5微米至25微米之間,例如大約7微米,但其他的方法與厚度也可被使用。
第一外連接件209可被形成以提供用來在第一接墊207及例如是第一重佈線層505(未繪示於圖2,但繪示且描述於圖5B)之間接觸彼此的導電區域。在一實施例中,第一外連接件209可以是導電柱且可由先形成在第一鈍化層211上方的光阻(未繪示),其厚度大約介於5微米至20微米之間,例如大約是10微米所形成。光阻可被圖案化以暴露出第一鈍化層211中導電柱將延伸通過的部分。一旦圖案化之後,光阻可接著作為罩幕去移除第一鈍化層211中欲移除的部分,從而暴露重疊於第一接墊207且第一外連接件209將連接的區域。
第一外連接件209可被形成在第一鈍化層211的開口與光阻的開口內。第一外連接件209可由導電材料如銅所形成,但其他導電材料如鎳、金或合金或其組合亦可。此外,第一外連接件209可透過電鍍的方式形成,電流通過第一接墊207的導電部分而至欲形成第一外連接件209處,且第一接墊207被浸入電鍍液。電鍍液與電流沉積物,例如銅,在光阻及第一鈍化層211的開口內,以填滿且/或溢出於開口,從而形成第一外連接件209。超出於第一鈍化層211的開口外的導電材料與光阻可接著透過例如是灰化(ashing)製程、化學機械研磨(CMP)製程或其結合或類似的製程被移除。
然而,如本領域的通常知識者所知,上面僅描述其中一種形成第一外連接件209的方法,並不侷限於此。上述方法僅是示意性地描述,任何其他適當可用來形成第一外連接件209的方法均可被使用,且被囊括在本案的這些實施例中。
晶粒貼合膜(die attach film,DAF)217可被配置在第一基板203的對側,以協助第一半導體元件201貼附至聚合物層105。在一實施例中,晶粒貼合膜217是環氧樹脂、酚樹脂(phenol resin)、丙烯酸橡膠(acrylic rubber)、二氧化矽填料(silica filler)或其結合,且使用層壓(lamination)的技術。然而,任何適當的材料或方法均可使用。
圖3繪示第一半導體元件201與第二半導體元件301一起配置在聚合物層105上。在一實施例中,第二半導體元件301可包括第二基板303、多個第二主動元件(未繪示)、多個第二金屬化層305、多個第二接墊307、第二鈍化層311及多個第二外連接件309。在一實施例中,第二基板303、第二主動元件、第二金屬化層305、第二接墊307、第二鈍化層311及第二外連接件309可相似於第一基板203、第一主動元件、第一金屬化層205、第一接墊207、第一鈍化層211及第一外連接件209,但也可以不同。
在一實施例中,第一半導體元件201與第二半導體元件301例如可透過拾取與放置製程(pick and place process)被配置在聚合物層105上。然而,任何配置第一半導體元件201與第二半導體元件301的方法均可被使用。
圖4繪示貫孔111、第一半導體元件201與第二半導體元件301的包封體401。包封體401可透過模塑元件(未繪示於圖4)來施作,模塑元件可包括上模塑部分與分離於上模塑部分的下模塑部分。當上模塑部分放低(lowered)以鄰近於下模塑部分,模塑空穴(molding cavity)被形成,以容納第一載具基板101、貫孔111、第一半導體元件201及第二半導體元件301。
在包封製程中,上模塑部分可配置在鄰近於下模塑部分處,從而將第一載具基板101、貫孔111、第一半導體元件201及第二半導體元件301包圍於模塑空穴內。一旦包圍之後,上模塑部分與下模塑部分可形成氣密,以控制氣體流入與流出於模塑空穴。一旦密封,包封體401可被配置在模塑空穴內。包封體401可是模塑化合物樹脂如聚醯亞胺、聚苯硫醚(PPS)、聚醚醚酮(PEEK)、聚酯(PES)、耐熱水晶樹脂(heat resistant crystal resin)或其結合或類似物。包封體401可在上模塑部分與下模塑部分對準之前被配置在模塑空穴內,或者也可透過注入孔注入模塑空穴。
一旦包封體401配置於模塑空穴內,包封體401包封第一載具基板101、貫孔111、第一半導體元件201及第二半導體元件301,包封體401可被固化,以硬化而提供最佳化保護。精準的固化製程至少部分決定於包封體401所選用的材料,在一實施例中,包封體401選用模塑化合物(molding compound),固化可透過例如是加熱包封體401到約100ºC至130ºC之間的溫度而發生,例如大約是125ºC且約60秒至3000秒,如大約是600秒。此外,引發劑且/或催化劑可被包括在包封體401內以更好地控制固化製程。
然而,如本領域的通常知識者所知,上面僅描述其中一種固化製程,並不侷限於此。在其他固化製程中,也可使用例如是照射或是甚至允許包封體401以在絕熱溫度硬化的方式來固化。任何適當的固化製程可被使用且被包括在本案的範疇之中。
圖4也繪示包封體401的薄化以使貫孔111、第一半導體元件201及第二半導體元件301外露以進行後續製程。薄化可例如是透過機械研磨(mechanical grinding)或化學機械研磨(CMP)被實施,化學機械研磨透過化學蝕刻劑與研磨料而與包封體401、第一半導體元件201與第二半導體元件301反應與研磨,直到貫孔111、第一外連接件209(繪示於圖2)及第二外連接件309(繪示於圖3)外露。如此,第一半導體元件201、第二半導體元件301及貫孔111可共平面(planar with)於包封體401。
然而,上述化學機械研磨僅是其中一種薄化方式,並不以此為限制。任何適合的移除方式也可被使用來薄化包封體401、第一半導體元件201及第二半導體元件301且暴露出貫孔111。例如,化學蝕刻可被使用。被用來薄化包封體401、第一半導體元件201及第二半導體元件301的此製程或其他適當的製程,均屬於本案的範疇。
圖5A至圖5B描述重佈線結構500形成在包封體401、目前外露的第一半導體元件201、第二半導體元件301及貫孔111上,圖5B是圖5A的虛線框502的放大圖。在一實施例中,重佈線結構500可透過在包封體401上形成第一重佈線鈍化層501而被形成。第一重佈線鈍化層501可以是聚苯并噁唑(PBO)。在其他實施例中,第一重佈線鈍化層501可以是聚醯亞胺,如低固化溫度聚醯亞胺(low-cure temperature polyimide)。第一重佈線鈍化層501可例如透過旋轉塗佈配置出大約介於5微米至17微米之間的厚度,例如大約是7微米,但任何方法或厚度均可被使用。
一旦形成第一重佈線鈍化層501,多個第一重佈線貫孔503可穿過第一重佈線鈍化層501而被形成,以與第一半導體元件201、第二半導體元件301及貫孔111電性連接。在一實施例中,第一重佈線貫孔503可透過例如鑲嵌製程(damascene process)形成,第一重佈線鈍化層501先透過例如是微影罩幕與蝕刻製程來圖案化以形成開口,或者,若第一重佈線鈍化層501的材料是光敏材料,透過曝光與顯影第一重佈線鈍化層501的材料來圖案化以形成開口。一旦圖案化,開口被例如是導電材料(如銅)填滿,且任何多餘的材料透過例如平坦化製程(如化學機械研磨)而被移除。當然,可採用任何適合的材料或製程。
在形成第一重佈線貫孔503之後,第一重佈線層505形成在與第一重佈線貫孔503電連接處的上方。在一實施例中,形成第一重佈線層505的方式可藉由先透過適當的製程(如化學氣相沉積或濺鍍)形成鈦銅合金的種子層,接著可形成光阻以覆蓋種子層,且光阻可接著被圖案化以暴露出種子層上欲形成第一重佈線層505的部位。
一旦形成光阻且光阻被圖案化,導電材料(如銅)可透過沉積製程(如電鍍)形成在種子層上。導電材料的厚度大約可在1微米至10微米之間,如大約是5微米。然而,導電材料的材料種類與形成方法並不以此為限制。任何適當的材料,如鋁銅(AlCu)或金,以及其他適當的製程,如化學氣相沉積(CVD)或物理氣相沉積(PVD),也可被用來形成第一重佈線層505。
一旦形成導電材料,光阻可透過適當的移除製程被移除,如化學剝離(chemical stripping)且/或灰化(ashing)。此外,在移除光阻之後,種子層被光阻覆蓋的部分可透過例如是適當的蝕刻製程透過導電材料作為罩幕而被移除。
在形成第一重佈線層505之後,可形成第二重佈線鈍化層507以幫助隔離(isolate)第一重佈線層505。在一實施例中,第二重佈線鈍化層507可與第一重佈線鈍化層501的材料不同。在一繪示的例子中,第一重佈線鈍化層501可以是聚苯并噁唑(PBO),且第二重佈線鈍化層507可以是介電材料(如低溫固化聚醯亞胺),其對重疊的層(例如,第一重佈線層505與第一重佈線鈍化層501)具有高黏性。相較於第一重佈線鈍化層501所使用的聚苯并噁唑,低溫固化聚醯亞胺可以是顯影不足之風險較低的負型材料(negative tone material)。在其他的實施例中,第二重佈線鈍化層507的材料也可相同於第一重佈線鈍化層501的材料。在一實施例中,第一及第二重佈線鈍化層501、507均可由低溫固化聚醯亞胺形成。
下面將說明形成且圖案化低溫固化聚醯亞胺的製程,例如由低溫固化聚醯亞胺形成的一個或多個重佈線鈍化層(例如第二重佈線鈍化層507)。在使用低溫固化聚醯亞胺作為合成物(composition)的特定實施例中,可透過先產生低溫固化聚醯亞胺合成物來形成低溫固化聚醯亞胺,低溫固化聚醯亞胺合成物可包括低溫固化聚醯亞胺樹脂連同感光成分(photoactive components,PACs)一起被放置於低溫固化聚醯亞胺溶劑內。在一實施例中,低溫固化聚醯亞胺樹脂可包括由下面分子式的單體所組成的聚合物:
此外,上面描述的可以是低溫固化聚醯亞胺樹脂的其中一個實施例,低溫固化聚醯亞胺樹脂並不以此為限制。任何適當的低溫固化聚醯亞胺樹脂可被使用,且所有光敏聚醯亞胺樹脂均被囊括於其中。
感光成分(PACs)可以例如是光酸產生劑(photoacid generators)、光鹼產生劑(photobase generators)、自由基產生劑(free-radical generators)或類似物,且感光成分可以是正型(positive-acting)或負型(negative-acting)。在感光成分是光酸產生劑的實施例中,感光成分可包括鹵化三(halogenated triazines)、鎓鹽(onium salts)、重氮鹽(diazonium salts)、芳族重氮鹽(aromatic diazonium salts)、鏻鹽(phosphonium salts)、硫鹽(sulfonium salts)、碘鹽(iodonium salts)、(imide sulfonate)、污磺酸鹽(oxime sulfonate)、二碸(disulfone)、o-nitrobenzylsulfonate、磺化酯(sulfonated esters)、 (halogenerated sulfonyloxy dicarboximides)、(diazodisulfones)、(α-cyanooxyamine-sulfonates)、(imidesulfonates)、(ketodiazosulfones)、(sulfonyldiazoesters)、1,2-二(芳基磺酰基)肼(1,2-di(arylsulfonyl)hydrazines)、硝基芐基酯(nitrobenzyl esters)及s-三嗪(s-triazine)衍生物、上述適當的結合或類似物。
可採用的光酸產生劑的實施例包括α.-(三氟甲基磺酰氧基)-二環[2.2.1]庚-5-烯-2 (α.-(trifluoromethylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2)、(3-dicarbo- ximide,MDT))、N-羥基萘二甲酰亞胺(N-hydroxy-naphthalimide,DDSN)、苯偶姻甲苯磺酸酯(benzoin tosylate)、叔丁基苯基α-(對甲苯磺酰氧基)-乙酸甲酯(t-butylphenyl-α-(p-toluenesulfonyloxy)-acetate)及叔丁基α-(對-甲苯磺酰氧基)-乙酸甲酯 (t-butyl-α-(p-toluenesulfonyloxy)-acetate)、三芳基(triarylsulfonium)及二芳基碘六氟銻酸鹽(diaryliodonium hexafluoroantimonates)、hexafluoroarsenates、 三氟甲(trifluoromethanesulfonates)、碘鎓全氟(iodonium perfluorooctanesulfonate)、(N-camphorsulfonyloxynaphthalimide)、 (N-pentafluorophenylsulfonyloxynaphthalimide)、離子的錪鎓磺酸鹽(ionic iodonium sulfonates)如(diaryl iodonium)(烷基(alkyl)或芳香基(aryl)(sulfonate and bis-(di-t-butylphenyl)iodonium camphanylsulfonate)、(perfluoroalkanesulfonates)如(perfluoropentanesulfonate)、全氟(perfluorooctanesulfonate)、 (perfluoromethanesulfonate)、芳香基(aryl)(例如,苯基(phenyl)或苯甲基(benzyl))三氟甲磺酸鹽(triflates)如三苯基锍三氟甲磺酸酯(triphenylsulfonium triflate)或雙-(叔丁基苯基)碘鎓三氟甲磺酸酯(bis-(t-butylphenyl)iodonium triflate);鄰苯三酚衍生物(pyrogallol derivatives)(例如,鄰苯三酚(trimesylate of pyrogallol)、羥基酰亞胺的三氟甲磺酸酯(trifluoromethanesulfonate esters of hydroxyimides)、α,α'雙-磺酰基-重氮甲烷(α,α'-bis-sulfonyl-diazomethanes)、硝基取代的芐醇的磺酸酯(sulfonate esters of nitro-substituted benzyl alcohols)、萘-4-二疊氮化物(naphthoquinone-4-diazides)、烷基二碸(alkyl disulfones)及其類似物。
在一實施例中,感光成分包括自由基產生劑者,感光成分可包括正苯基甘氨酸(n-phenylglycine)、芳族酮(aromatic ketones)如二苯甲酮(benzophenone)、N,N'-四甲基-4(N,N'-tetramethyl-4)、4'-氨基二(4'-diaminobenzophenone)、N,N'-四乙基-4 (N,N'-tetraethyl-4)、4'-氨基二(4'-diaminobenzophenone)、(4-methoxy-4'-dimethylaminobenzo- phenome)、3,3'-二甲基-4-甲氧基(3,3'-dimethyl-4-methoxybenzophenone)、p,p'-雙(二甲基氨基)苯並苯酮(p,p'-bis(dimethylamino)benzo-phenone)、p,p'-二(二乙基氨基)苯甲酮(p,p'-bis(diethylamino)-benzophenone)、蒽醌(anthraquinone)、2-乙基蒽醌(2-ethylanthraquinone)、萘醌(naphthaquinone)和菲醌(phenanthraquinone)、苯偶姻(benzoins) 如苯偶姻(benzoin)、 benzoinmethylether、 benzoinethylether、 benzoinisopropylether、苯偶姻-正丁醚(benzoin-n-butylether)、苯偶姻-苯基醚(benzoin-phenylether)、 methylbenzoin and ethybenzoin、 芐基衍生物(benzyl derivatives)如芐基(dibenzyl)、 benzyldiphenyldisulfide和芐基二甲基啶(benzyldimethylketal)、吖啶衍生物(acridine derivatives)如9-苯基和1,7-雙(9-吖啶基)庚烷(9-phenylacridine and 1、7-bis(9-acridinyl)heptane)、噻噸酮(thioxanthones)如2-氯(2-chlorothioxanthone)、2-甲基噻噸酮(2-methylthioxanthone)、2,4-二乙基(2、4-diethylthioxanthone)、2,4-dimethylthioxanthone and 2-isopropylthioxanthone、苯乙酮(acetophenones)如1、1-dichloroacetophenone、 p-t-butyldichloro-acetophenone、 2,2-二乙氧基苯乙酮(2、2-diethoxyacetophenone)、2,2-二甲氧基-2-苯基苯乙酮(2、2-dimethoxy-2-phenylacetophenone)、 和2、2-dichloro-4-phenoxyacetophenone、2,4,5-三芳基咪唑二聚體(2、4、5-triarylimidazole dimers)如2-(鄰氯苯基)-4(2-(o-chlorophenyl)-4)、5-二苯基二聚物(5-diphenylimidazole dimer)、2-(鄰氯苯基)-4(2-(o-chlorophenyl)-4)、5-二-(間甲氧基苯基咪唑二聚物)(5-di- (m-methoxyphenyl imidazole dimer)、2-(鄰氟苯基)-4(2-(o-fluorophenyl)-4)、5-二苯基二聚物(5-diphenylimidazole dimer)、2-(鄰甲氧基苯基)-4 (2-(o-methoxyphenyl)-4)、5-二苯基二聚物(5-diphenylimidazole dimer)、2-(對甲氧基苯基)-4 (2-(p-methoxyphenyl)-4)、5-二苯基二聚物(5-diphenylimidazole dimer)、2,4-二(對甲氧基苯基)-5-苯基咪唑二聚體(2、4-di(p-methoxyphenyl)-- 5-phenylimidazole dimer)、2-(2,4-二甲氧基苯基)-4(2-(2、4-dimethoxyphenyl)-4)、5-二苯基咪唑二聚物(5-diphenylimidazole dimer)和 2-(p-methylmercaptophenyl)-4、5-二苯基咪唑二聚體(5-diphenylimidazole dimmer)、上述適當的結合或類似物。
在一實施例中、感光成分包括光鹼產生劑者、感光成分可 包括季銨二硫代氨基甲酸酯(quaternary ammonium dithiocarbamates)、α氨基酮(α aminoketones)、 oxime-urethane containing molecules 如dibenzophenoneoxime hexamethylene diurethan、 ammonium tetraorganylborate salts、及N-(2-硝基芐氧羰)環胺(N-(2-nitrobenzyloxycarbonyl) cyclic amines)、上述適當的結合或類似物。 然而,本領域的通常知識者可知道,此處列出的化學化合物只是感光成分的例子,感光成分並不侷限於此。可採用任何適合的感光成分,所有的感光成分均被囊括在這些實施例中。
在一實施例中、低溫固化聚醯亞胺溶劑可以是有機溶劑且可包括任何適當的溶劑,如酮(ketones)、醇(alcohols)、 多元醇(polyalcohols)、醚(ethers)、二醇醚(glycol ethers)、環醚(cyclic ethers)、芳族烴(aromatic hydrocarbons)、酯(esters)、丙酸鹽(propionates)、乳酸鹽(lactates)、乳酸酯(lactic esters)、 亞烷基二醇單烷基醚(alkylene glycol monoalkyl ethers)、烷基乳酸鹽(alkyl lactates)、 alkyl alkoxypropionates、環狀內酯(cyclic lactones)、含環單酮化合物(monoketone compounds that contain a ring)、碳酸亞烷基酯(alkylene carbonates)、 alkyl alkoxyacetate、烷基丙酮酸(alkyl pyruvates)、乙二醇烷基醚乙酸酯(ethylene glycol alkyl ether acetates)、二乙二醇(diethylene glycols)、丙二醇烷基醚乙酸酯(propylene glycol alkyl ether acetates)、亞烷基二醇烷基醚酯(alkylene glycol alkyl ether esters)、亞烷基二醇單烷基酯(alkylene glycol monoalkyl esters)或類似物。
在特定的實施例中,低溫固化聚醯亞胺合成物的低溫固化聚醯亞胺溶劑採用的材料包括丙酮(acetone)、甲醇(methanol)、乙醇 (ethanol)、甲苯(toluene)、二甲苯(xylene)、 (4-hydroxy-4-methyl-2-pentatone)、四氫呋喃(tetrahydrofuran)、甲基乙基酮(methyl ethyl ketone)、環己酮(cyclohexanone)、甲基異戊基酮(methyl isoamyl ketone)、2-庚酮(2-heptanone)、乙二醇(ethylene glycol、乙二醇單乙酸酯(ethylene glycol monoacetate)、乙二醇二甲基醚(ethylene glycol dimethyl ether)、乙二醇甲基醚(ethylene glycol methylethyl ether)、乙二醇單乙醚(ethylene glycol monoethyl ether)、 methyl celluslve acetate、乙基溶纖劑乙酸酯(ethyl cellosolve acetate)、 二甘醇(diethylene glycol、二甘醇單乙酸酯(diethylene glycol monoacetate)、二甘醇單甲醚(diethylene glycol monomethyl ether)、二甘醇二乙醚(diethylene glycol diethyl ether)、二甘醇二甲醚(diethylene glycol dimethyl ether)、二甘醇乙基甲基醚(diethylene glycol ethylmethyl ether)、二甘醇單乙醚(diethylene glycol monoethyl ether)、二甘醇單丁醚(diethylene glycol monobutyl ether)、2-羥基丙酸乙酯(ethyl 2-hydroxypropionate)、2-羥基-2-甲基丙酸甲酯(methyl 2-hydroxy-2-methylpropionate)、2-羥基-2-甲基丙酸乙酯(ethyl 2-hydroxy-2-methylpropionate)、ethyl ethoxyacetate、羥基乙酸乙酯(ethyl hydroxyacetate)、 methyl 2-hydroxy-2-methylbutanate、甲基-3-甲氧基丙(methyl 3-methoxypropionate)、3-甲氧基丙酸甲酯(ethyl 3-methoxypropionate)、3-乙氧基丙酸乙酯(methyl 3-ethoxypropionate)、3-乙氧基丙酸乙酯(ethyl 3-ethoxypropionate)、乙酸乙酯(ethyl acetate)、醋酸丁酯(butyl acetate)、乳酸甲酯(methyl lactate)和乳酸乙酯(ethyl lactate)、丙二醇(propylene glycol)、丙二醇單乙酸酯(propylene glycol monoacetate)、丙二醇單乙醚乙酸酯(propylene glycol monoethyl ether acetate)、丙二醇單甲醚乙酸酯(propylene glycol monomethyl ether acetate)、丙二醇單丙甲基醚乙酸酯(propylene glycol monopropyl methyl ether acetate)、丙二醇單丁基醚乙酸酯(propylene glycol monobutyl ether acetate)、丙二醇單丁基醚乙酸酯(propylene glycol monobutyl ether acetate)、丙二醇單甲醚丙酸酯(propylene glycol monomethyl ether propionate)、丙二醇單乙醚丙酸酯(propylene glycol monoethyl ether propionate)、 propylene glycol methyl ether adcetate、 proplylene glycol ethyl ether acetate)、乙二醇單甲醚乙酸酯(ethylene glycol monomethyl ether acetate)、乙二醇單乙醚乙酸酯(ethylene glycol monoethyl ether acetate)、丙二醇單甲醚(propylene glycol monomethyl ether)、丙二醇單乙醚(propylene glycol monoethyl ether)、丙二醇單丙醚(propylene glycol monopropyl ether)、丙二醇單丁醚(propylene glycol monobutyl ether)、乙二醇單甲醚(ethylene glycol monomethyl ether)、乙二醇單乙醚(ethylene glycol monoethyl ether)、乳酸丙酯(propyl lactate)、和乳酸丁酯(butyl lactate)、3-乙氧基丙酸乙酯(ethyl 3-ethoxypropionate)、3-β-甲氧基(methyl 3-methoxypropionate)、甲基3-乙氧基(methyl 3-ethoxypropionate)、和3-甲氧基丙(ethyl 3-methoxypropionate)、β丙內酯(β-propiolactone、β-γ-丁內酯(β-butyrolactone)、γ丁內酯(γ-butyrolactone)、α甲基γ丁內酯(α-methyl-γ-butyrolactone)、β-甲基-γ丁內酯(β-methyl-γ-butyrolactone)、γ-戊內酯(γ-valerolactone)、γ己內酯(γ-caprolactone)、γ-辛內酯(γ-octanoic lactone)、α羥基γ丁內酯(α-hydroxy-γ-butyrolactone)、2-丁酮(2-butanone)、3-甲基丁酮(3-methylbutanone)、頻哪酮(pinacolone)、2-戊酮(2-pentanone)、3-戊酮(3-pentanone)、4-甲基-2-戊酮(4-methyl-2-pentanone)、2-甲基-3-戊酮(2-methyl-3-pentanone)、4,4-二甲基-2-戊酮(4,4-dimethyl-2-pentanone)、2,4-二甲基-3-戊酮(2、4-dimethyl-3-pentanone)、2,2,4,4-四甲基-3-戊酮(2、2、4、4-tetramethyl-3-pentanone)、2-己酮(2-hexanone)、3-己酮(3-hexanone)、5-甲基-3-己酮(5-methyl-3-hexanone)、2-庚酮(2-heptanone)、3-庚酮(3-heptanone)、4-庚酮(4-heptanone)、2-甲基-3-庚酮(2-methyl-3-heptanone)、5-甲基-3-庚酮(5-methyl-3-heptanone)、2,6-二甲基4-庚酮(2,6-dimethyl-4-heptanone)、2-辛酮(2-octanone)、3-辛酮(3-octanone)、2-壬酮(2-nonanone)、3-壬酮(3-nonanone)、5-壬酮(5-nonanone)、2-癸酮(2-decanone)、3-癸酮(3-decanone)、4-癸酮(4-decanone)、5-hexene-2-one、3-pentene-2-one、環戊酮(cyclopentanone)、2-甲基環戊酮(2-methylcyclopentanone)、3-甲基環戊酮(3-methylcyclopentanone)、2,2-二甲基環戊酮(2,2-dimethylcyclopentanone)、 2,4,4-trimethylcyclopentanone、環己酮(cyclohexanone)、3-甲基環己酮(3-methylcyclohexanone)、4-甲基環己酮(4-methylcyclohexanone)、4-乙基環(4-ethylcyclohexanone、2,2-二甲基環(2、2-dimethylcyclohexanone)、2,6-二甲基環(2,6-dimethylcyclohexanone)、2,2,6三甲基(2,2,6-trimethylcyclohexanone)、環庚酮(cycloheptanone)、 2-methylcycloheptanone、 3-methylcycloheptanone、 pylene carbonate、碳酸亞乙烯酯(vinylene carbonate)、碳酸乙烯酯(ethylene carbonate)、和碳酸亞丁酯(butylene carbonate)、乙酸-2-甲氧基乙基(acetate-2-methoxyethyl)、乙酸-2-乙氧基乙基(acetate-2-ethoxyethyl)、乙酸基-2-(2-乙氧基乙氧基)乙基(acetate-2-(2-ethoxyethoxy)ethyl)、 乙酸-3-甲氧基-3-甲基丁基(acetate-3-methoxy-3-methylbutyl)、乙酸-1-甲氧基-2-丙基(acetate-1-methoxy-2-propyl)、二丙二醇(dipropylene glycol)、單甲醚(monomethylether)、單乙醚(monoethylether)、一丙基醚(monopropylether)、 monobutylehter、單苯基(monophenylether)、二丙二醇單乙酸酯(dipropylene glycol monoacetate)、二惡烷(dioxane)、etheyl lactate、乙酸甲酯(methyl acetate)、乙酸乙酯(ethyl acetate)、乙酸丁酯(butyl acetate)、 methyl puruvate、 ethyl puruvate、丙基丙酮酸鹽(propyl pyruvate)、甲氧基丙酸甲酯(methyl methoxypropionate)、乙氧基丙酸乙酯(ethyl ethoxypropionate)、正-甲基吡咯烷酮(n-methylpyrrolidone,NMP)、2-甲氧基乙醚(二甘醇二甲醚)(2-methoxyethyl ether (diglyme)、 ethylene glycol monom-ethyl ether、丙二醇單甲醚(propylene glycol monomethyl ether);methyl proponiate、 ethyl proponiate 和 ethyl ethoxy proponiate、甲乙酮(methylethyl ketone)、環己酮(cyclohexanone)、 2-庚酮(2-heptanone)、二氧化碳(carbon dioxide)、 cyclopentatone、環己酮(cyclohexanone)、 ethyl 3-ethocypropionate、丙二醇甲基醚乙酸酯(propylene glycol methyl ether acetate,PGMEA)、甲基溶纖劑(methylene cellosolve)、丁基化乙酸酯(butyle acetate)、和2-乙氧基乙醇(2-ethoxyethanol)、N-甲基甲酰胺(N-methylformamide)、N,N-二甲基甲酰胺(N,N-dimethylformamide)、 N-methylformanilide、N-甲基乙酰胺(N-methylacetamide)、N,N-二甲基乙酰胺(N,N-dimethylacetamide)、N-甲基吡咯烷酮(N-methylpyrrolidone)、二甲基亞砜(dimethylsulfoxide)、芐基乙基醚(benzyl ethyl ether)、二己基醚(dihexyl ether)、丙酮基丙酮(acetonylacetone)、異佛爾酮(isophorone)、己酸(caproic acid)、辛酸(caprylic acid)、1-辛醇(1-octanol)、1-壬醇(1-nonanol)、芐醇(benzyl alcohol)、乙酸芐酯(benzyl acetate)、苯甲酸乙酯(ethyl benzoate)、草酸二乙酯(diethyl oxalate)、馬來酸二乙酯(diethyl maleate)、γ丁內酯(γ-butyrolactone)、碳酸亞乙酯(ethylene carbonate)、碳酸丙烯酯(propylene carbonate)、苯基溶纖劑乙酸酯(phenyl cellosolve acetate)、聚酰胺酸酯(polyamic acid ester)或類似物。
在說明且不限制的實施例中,低溫固化聚醯亞胺合成物可包括N-甲基-2-吡咯烷酮(N-methyl-2-pyrrolidone,NMP)、聚酰胺酸酯(polyamic acid ester)、乳酸乙酯(ethyl lactate,EL)、四甘醇二甲基丙烯酸(tetraethylene glycol dimathacrylate)或其組合。例如,低溫固化聚醯亞胺合成物可包括45%至55%的N-甲基-2-吡咯烷酮(N-methyl-2-pyrrolidone,NMP)、25%至35%的聚酰胺酸酯(polyamic acid ester)、10%至15%的乳酸乙酯(ethyl lactate,EL)與1%至5%的四甘醇二甲基丙烯酸(tetraethylene glycol dimathacrylate)。
在一實施例中,低溫固化聚醯亞胺樹脂及感光成分連同任何想要的添加物或其他媒介被加入低溫固化聚醯亞胺溶劑內。例如,低溫固化聚醯亞胺樹脂可具有大約介於5%至50%之間的濃度,如大約是25%,感光成分可具有大約介於0.1%至20%之間的濃度,如大約是5%。一旦被加入,混合物接著被混合以達成均勻的低溫固化聚醯亞胺合成物,以確保沒有不均勻混合或是非恆定合成物(non-constant composition)而導致的缺點。一旦混合,低溫固化聚醯亞胺合成物可在使用之前被儲存或是可馬上使用。
以第二重佈線鈍化層507為例,一旦完成,第二重佈線鈍化層507可透過先在第一重佈線層505與第一重佈線鈍化層501上施加低溫固化聚醯亞胺合成物的方式而形成。第二重佈線鈍化層507可施加於第一重佈線層505,而使得第二重佈線鈍化層507塗佈在第一重佈線層505的外露的上表面,且可透過例如是旋轉塗佈製程、浸漬塗佈(dip coating)、氣動刮刀塗佈(air-knife coating)、淋幕式塗佈(curtain coating)、線棒塗佈(wire-bar coating)、凹版印刷塗佈(gravure coating)、層積(lamination)、擠壓塗佈(extrusion coating)等方法或其結合或類似方法製作。第二重佈線鈍化層507的厚度約可介於7微米至35微米之間。
一旦施加第二重佈線鈍化層507,在曝光(exposure)第二重佈線鈍化層507之前,第二重佈線鈍化層507可被烘烤以固化且乾燥(將於下面段落描述)。第二重佈線鈍化層507的固化與乾燥移除了溶劑成分而留下了樹脂、感光成分及任何其他所選擇的添加物。在一實施例中,可在能夠揮發溶劑的溫度下進行預先烘烤,如在40°C至150°C之間,例如大約是150°C,精確的溫度會決定於第二重佈線鈍化層507所選擇的材料種類。預先烘烤會進行一段足夠的時間去固化且乾燥第二重佈線鈍化層507,例如大在介於10秒到5分鐘之間,例如大約是270秒。
一旦固化且乾燥之後,第二重佈線鈍化層507可被圖案化以形成通到第一重佈線層505的開口523,其可填充形成第二重佈線層509的導電材料。在一實施例中,圖案化製程可透過在用來曝光的光微影系統601內放置第二重佈線鈍化層507形成於其上方的封裝來開始。
請參閱圖6,其表示出光微影系統601。光微影系統601可包括光源603、光605、聚光透鏡607、光罩609、光罩台611、投影透鏡613、封裝台619、封裝617(示意性地表示元件,如圖5A與圖5B所示,例如第二重佈線鈍化層507形成於載具基板101、第一及第二半導體元件201、301、包封體401等上方)及如第二重佈線鈍化層507的鈍化層615。然而,其他的配置、包括或省略光微影系統601也是可能的。
光微影系統601也可參考步進對準曝光機(stepper)或掃描器(scanner),且光罩609也可參考光罩幕或標線片(reticle)。光源603包括提供光605的輻射源,光605具有波長大約是365奈米的紫外光。例如,可使用汞燈,其可提供如I-line(365奈米)波長的紫外光。在說明的實施例中,光微影系統601是I-line步進對準曝光機,其可用來製造出365奈米的單波長光。
在一實施例中,光源603供應光605至第二重佈線鈍化層507,為了誘發感光成分反應,感光成分依次(in turn)與第二重佈線鈍化層507聚合物樹脂反應以化學地替換光605照射到第二重佈線鈍化層507的部位。第二重佈線鈍化層507被圖案化的光線照射到的部位誘發第二重佈線鈍化層507內的感光成分反應。吸收圖案化光線的感光成分的化學反應產物(例如,酸/鹼/自由基)接著與第二重佈線鈍化層507聚合物樹脂反應,化學地替代第二重佈線鈍化層507透過圖案化罩幕被照射到的區域。聚光透鏡607被配置來引導光605至光罩609。在說明的實施例中,在曝光步驟中,只有I-line波長的光被光605供應到第二重佈線鈍化層507(例如對比於GHI-line波長的寬頻光)。
在一實施例中,光微影系統601透過少於500毫焦/平方公分(mJ/cm2
)的低能量劑量的光605照射到第二重佈線鈍化層507。在一些實施例中,能量劑量大約介於60毫焦/平方公分至185毫焦/平方公分之間。在其他實施例中,能量劑量介於125毫焦/平方公分至375毫焦/平方公分之間。可理解的是,能量的量值可決定於第二重佈線鈍化層507的厚度與被形成的貫孔開口的尺寸。例如,在一說明的實施例中,當第二重佈線鈍化層507是7微米厚且貫孔開口是7微米寬,曝光劑量可以是125毫焦/平方公分(正/負大概60毫焦/平方公分);當第二重佈線鈍化層507是12.5微米厚且貫孔開口是10微米寬,曝光劑量可以是250毫焦/平方公分(正/負大概125毫焦/平方公分)。
光罩609阻擋部分的光605且提供光605的空中圖像(aerial image)以形成圖案化的光。光罩609可以是二元罩幕(BIM)、超二元罩幕(SBIM)或相轉換罩幕(PSM),相轉換罩幕包括替代的相轉換罩幕(alternative PSM,alt. PSM)或衰減相轉換罩幕(attenuated PSM,att. PSM)。光罩609位在光605的能量源與第二重佈線鈍化層507之間,以阻擋部分的光605,而在光605實際上照射到第二重佈線鈍化層507之前,形成圖案化能量。在一實施例中,光罩609可包括一系列的層(例如,基板、多個吸收層(absorbance layers)、抗反射膜層(anti-reflective coating layers)、遮蔽層(shielding layers)等)去反射、吸收或阻擋部分的光605到達第二重佈線鈍化層507不欲被照射到的部分。藉由在光罩609上的欲照射形狀的位置形成貫穿的開口,而將所欲形成的圖案形成在光罩609內。
光罩609被定位在光罩台611。光罩台611包括多個馬達、多個滾柱導軌(roller guides)及多個桌子(tables)。光罩台611可透過真空的方式將光罩609固定至光罩台611。光罩台611可操作以在光微影系統601進行對位、聚焦、水平化及曝光的過程中提供光罩609在X、Y與Z方向上準確的位置與移動。
投影透鏡613包括倍率鏡頭(magnification lens),用來縮小光罩609所提供的圖案化光線,且引導圖案化光線至設置在基板617上的第二重佈線鈍化層507,基板617被固定至基板台619。在說明的實施例中,投影透鏡613具有大約介於0.1至0.18之間的低數值孔徑,如0.16(對比於0.4至0.9的範圍內的高數值孔徑)。
基板台619在光微影系統601進行對位、聚焦、水平化及曝光的過程中提供基板617在X、Y與Z方向的準確的位置與移動,而使光罩609的影像被傳輸至第二重佈線鈍化層507上,在重複的方式(repetitive fashion)中,也可透過其他的微影方法。光微影系統601或它的其他部分可包括額外的項目,例如真空系統且/或冷卻系統。
請再回到圖5A與圖5B,在第二重佈線鈍化層507被曝光之後,可使用第一曝光後烘烤(post-exposure bake,PEB)以協助在曝光過程中,照射到感光成分上的能量所產生的酸/鹼/自由基產生、分散與反應。這樣有助於創造或是增進受到能量照射的區域與未被能量照射的區域之間產生化學差異與不同極性的化學反應。這些化學差異也導致受到能量照射的區域與未被能量照射的區域的溶解度(solubility)的差異。在一實施例中,第二重佈線鈍化層507的溫度可增加至大約70°C至150°C之間且大約維持40秒至120秒,如大約2分鐘。在特定的實施例中,曝光後烘烤可被實施於140°C、150°C、130°C、110°C、90°C及70°C的溫度,且各持續大約2分鐘。
一旦第二重佈線鈍化層507經曝光且烘烤,第二重佈線鈍化層507可透過顯影劑來顯影。在一實施例中,第二重佈線鈍化層507是低溫固化聚醯亞胺,第二重佈線鈍化層507未受到能量曝光的部分保留原本的溶解度,而使第一顯影劑可以使用有機溶劑或臨界液體(critical fluid)以移除第二重佈線鈍化層507未受到能量曝光的部分。材料舉例而言可使用包括烴類溶劑(hydrocarbon solvents)、醇類溶劑(alcohol solvents)、醚類溶劑(ether solvents)、酯類溶劑(ester solvents)、臨界液體(critical fluids)或其組合或類似物。負型溶劑可使用的材料例如包括環戊烷(cyclopentanon,A515)、己烷(hexane)、庚烷(eptane)、辛烷(octane)、甲苯(toluene)、二甲苯(xylene)、二氯甲烷(dichloromethane)、氯仿(chloroform)、四氯化碳(carbon tetrachloride)、三氯乙烯(trichloroethylene)、甲醇(methanol)、乙醇(ethanol)、丙醇(propanol)、丁醇(butanol)、臨界二氧化碳(critical carbon dioxide)、二乙醚(diethyl ether)、二丙醚(dipropyl ether)、二丁醚(dibutyl ether)、乙基乙烯基醚(ethyl vinyl ether)、二惡烷(dioxane)、環氧丙烷(propylene oxide)、四氫呋喃(tetrahydrofuran)、溶纖劑(cellosolve)、甲基溶纖劑(methyl cellosolve)、丁基溶纖劑(butyl cellosolve)、甲基卡必醇(methyl carbitol)、二甘醇單乙醚(diethylene glycol monoethyl ether)、丙酮(acetone)、甲基乙基酮(methyl ethyl ketone)、甲基異丁基酮(methyl isobutyl ketone)、異佛爾酮(isophorone)、環己酮(cyclohexanone)、乙酸甲酯(methyl acetate)、乙酸乙酯(ethyl acetate)、乙酸丙酯(propyl acetate)、乙酸丁酯(butyl acetate)、吡啶(pyridine)、甲酰胺(formamide)、N,N-二甲基甲酰胺(N,N-dimethyl formamide)或類似物。
第一顯影劑可例如透過旋轉塗佈的方式被施加於第二重佈線鈍化層507。在此製程中,第二重佈線鈍化層507旋轉,第一顯影劑從第二重佈線鈍化層507上方施加於第二重佈線鈍化層507。在一實施例中,第一顯影劑的溫度可大約是介於10°C至80°C之間,如大概是50°C,且顯影可持續大約1分鐘至60分鐘之間,如大約30分鐘。
然而,旋轉塗佈的方式只是其中一種在第二重佈線鈍化層507曝光後顯影的適當方式,本案的實施例並不限於此。任何顯影的適當方式包括浸漬塗佈(dip coating)、攪煉製程(puddle processes)、噴鍍製程(spray-on processes)、或其結合或類似方法也可被使用。這些都被囊括在這些實施例中。
膜損(film loss)會發生在顯影階段中。然而,相較於GHI-line曝光,低溫固化聚醯亞胺在I-line曝光的膜損下降。例如,顯影膜損從GHI-line曝光的1.42微米下降至I-line曝光的0.47微米。GHI-line曝光是使用多波長的寬頻段,I-line曝光則是365奈米的單一波長。
在顯影之後,可進行顯影後烘烤以幫助第二重佈線鈍化層507在顯影製程之後聚合(polymerize)與安定(stabilize)。在一實施例中,顯影後烘烤可大約在140°C的溫度進行約2分鐘。
在顯影後烘烤與重佈線層(RDL)表面處理之後,第二重佈線鈍化層507可被固化。在一實施例中,第二重佈線鈍化層507包括低溫固化聚醯亞胺,固化製程可進行於低於230°C的低溫,例如大約介於200°C至230°C的溫度,如大約是220°C,且時間介於1小時至2小時之間。在特定的實施例中,固化製程可在溫度為230°C時進行約1小時、溫度為220°C時進行約1小時或溫度為200°C時進行約2小時。然而,任何適當的溫度與時間均可被使用。
請繼續參閱圖5A至圖5B,在第二重佈線鈍化層507被圖案化之後,第二重佈線層509可被形成在穿過第二重佈線鈍化層507的開口523內,且與第一重佈線層505電性連接。在一實施例中,第二重佈線層509可與第一重佈線層505使用相似的材料與製程。例如,可配置種子層,且種子層被圖案化光阻覆蓋,導電材料如銅可被配置到種子層,圖案化光阻可被移除,且種子層可使用導電材料作為罩幕來蝕刻。然而,任何適當的材料與製程均可被使用。
在形成第二重佈線層509之後,第三重佈線鈍化層511被配置到第二重佈線層509上以協助隔離且保護第二重佈線層509。在一實施例中,第三重佈線鈍化層511可與第二重佈線鈍化層507以相似的材料與製程被形成。例如,第三重佈線鈍化層511可由低溫固化聚醯亞胺形成且圖案化,下面將對此描述。然而,任何適當的材料與製程均可被使用。
在第三重佈線鈍化層511被圖案化之後,第三重佈線層513可被形成在第三重佈線鈍化層511的開口內且電性連接於第二重佈線層509。在一實施例中,第三重佈線層513可使用相同於第一重佈線層505的材料與製程來形成。例如,可配置種子層,且種子層被圖案化光阻覆蓋,導電材料如銅可被配置到種子層,圖案化光阻可被移除,且種子層可使用導電材料作為罩幕來蝕刻。然而,任何適當的材料與製程均可被使用。
在形成第三重佈線層513之後,第四重佈線鈍化層515可被形成在第三重佈線層513上,以協助隔離且保護第三重佈線層513。 在一實施例中,第四重佈線鈍化層515可使用相同於第二重佈線鈍化層507的材料與製程來形成。例如,第四重佈線鈍化層515可由低溫固化聚醯亞胺形成且圖案化,下面將對此描述。然而,任何適當的材料與製程均可被使用。
低溫固化聚醯亞胺所形成的其他重佈線鈍化層可利用相同於上述的第二重佈線鈍化層507的製程來製作。
請參閱圖7A至圖7D,根據一些實施例繪示重佈線結構的部分以表達出且有助於說明這些實施例的優點。圖7A是如此處描述而形成的重佈線結構的剖面圖。圖7A繪示重佈線結構的平坦化程度(degree of planarization,DoP)。圖7B繪示出圖7A的特寫圖,其繪示由重疊的重佈線層所導致的重佈線鈍化層的表面的缺陷(imperfection)。平坦化程度(DoP)決定於下面的公式,其中t是重佈線層的厚度,ts是由重疊的重佈線層所導致的重佈線鈍化層的凸起(bump)或缺陷的高度: DoP = (1 –) x 100%。
當低溫固化聚醯亞胺所形成的重佈線鈍化層使用I-line曝光而非GHI-line曝光時,平坦化程度(DoP)被提升。例如,實驗數據指出平坦化程度(DoP)從48.6%增加至71.4%。換句話說,低溫固化聚醯亞胺在I-line曝光之後明顯變平坦。
影響平坦化程度(DoP)的一個因素可在圖7C與圖7D中看出更多細節。本領域的通常知識者將理解在先前描述的顯影階段中,膜(例如低溫固化聚醯亞胺的交聯(cross-linking)變弱,且交聯變弱會影響固化過程中的膜表現。相較於低溫固化聚醯亞胺以寬頻的GHI-line曝光,低溫固化聚醯亞胺以單波長I-line曝光具有較強的交聯程度。此結果導致當低溫固化聚醯亞胺以單波長I-line曝光時,定義出貫孔開口的膜的上角落(top corners)更圓(rounder)。在一些實施例中,如圖7D所示,變圓的上角落的角度大約在0.3Π至0.5Π,弧度(50°至90°)的範圍中。較圓的貫孔角落藉由未限制的例子在整合型扇出(InFO)封裝內可降低低溫固化聚醯亞胺的介電壓力(dielectric stress)。
如上討論,圖案化製程影響鈍化層的上角落的圓化(rounding)而定義出貫孔開口。然而,圖案化製程更創造在鈍化層的上表面上且位於貫孔開口旁的內縮(indentions)。從貫孔開口內縮的程度與角度也影響到平坦化程度(DoP)。內縮的角度越大,鈍化層的上表面的起伏(wavier)越大,由於ts值增加導致較低的平坦化程度(DoP)。在說明的實施例中,經I-line曝光的低溫固化聚醯亞胺具有大約是2°到8°的內縮角度,經GHI-line曝光的低溫固化聚醯亞胺則具有大約是10°到15°的內縮角度。
請主要參閱圖7C,其可看到貫孔的側牆的角度。相較於GHI-line曝光的低溫固化聚醯亞胺,I-line曝光的低溫固化聚醯亞胺產生較陡峭的(steeper)貫孔輪廓,其可顯著地擴大重佈線(RDL)的佈線窗(routing window)。藉由此例子,I-line的貫孔輪廓為75°至85°,GHI-line的貫孔輪廓只有55°至65°。
圖8A根據一些實施例繪示貫孔的平均(mean)目標厚度(target thickness,THK)相對於顯影時間的示意圖,此處形成有貫孔的鈍化層為低溫固化聚醯亞胺。圖8A比較GHI-line曝光與I-line曝光的低溫固化聚醯亞胺的貫孔的目標厚度(THK)與顯影時間。I-line曝光的鈍化層的目標厚度(THK)在1.8倍最小顯影時間(MDT)顯示出0.47微米的損耗。作為比較,GHI-line曝光的鈍化層的目標厚度(THK)在1.8倍最小顯影時間(MDT)顯示出1.42微米的損耗。
圖8B根據一些實施例繪示低溫固化聚醯亞胺的鈍化層的膜損與顯影時間的示意圖,此處形成有貫孔的鈍化層為低溫固化聚醯亞胺。圖8B比較GHI-line曝光與I-line曝光的低溫固化聚醯亞胺的膜損量與顯影時間。I-line曝光的鈍化層的膜損在1.8倍最小顯影時間(MDT)顯示出0.47微米的損耗。作為比較,GHI-line曝光的鈍化層的膜損在1.8倍最小顯影時間(MDT)顯示出1.42微米的損耗。
圖9A至圖9B根據一些實施例說明在圖案化製程的不同步驟中比較GHI-line曝光對比I-line曝光的鈍化層的平均目標厚度(THK)的實驗數據。
I-line曝光的低溫固化聚醯亞胺的解析度(resolution)優於GHI-line曝光的低溫固化聚醯亞胺。例如,曝光的貫孔的尺寸比(aspect ratio)的限制從1.1增進為1.3。I-line曝光的低溫固化聚醯亞胺的膜損與收縮率(shrinkage rate)比GHI-line曝光的低溫固化聚醯亞胺來得低。例如,顯影膜損從1.42微米降低至0.47微米,且顯影後烘烤(PDB)收縮從92.7%增加至95.2%。因此,蝕刻後檢查目標厚度(AEI THK)增加了0.9微米(7.75微米對比於6.85微米)。同樣地,最後蝕刻後檢查(AEI)貫孔的尺寸比(aspect ratio)限制從0.62(6.85微米/11.02微米)增加至08(7.75微米/9.64微米)。例如,GHI-line曝光的最大貫孔的臨界尺寸(critical dimension,CD)的尺寸比(目標厚度(THK)/臨界尺寸(CD))為0.6,目標厚度(THK)是6.85微米,且臨界尺寸(CD)是11.02微米。作為比較,I-line曝光的最大貫孔的臨界尺寸(CD)的尺寸比(目標厚度(THK)/臨界尺寸(CD))為0.8,目標厚度(THK)是7.75微米,且臨界尺寸(CD)是9.64微米。
使用I-line曝光的低溫固化聚醯亞胺允許具有1:1的尺寸比(aspect ratio,AR)、小貫孔開口(例如,小於15微米)且大厚度(例如,大於7微米)的高解析度貫孔開口。藉由此例子,具有10微米的底部臨界尺寸(CD)的低溫固化聚醯亞胺,經GHI-line曝光,會具有5微米的目標厚度(THK),55°至65°的貫孔角度,且頂部臨界尺寸(CD)大約是12.66微米至17.66微米。作為對比,具有10微米的底部臨界尺寸(CD)的低溫固化聚醯亞胺,經I-line曝光,會具有7微米的目標厚度(THK),75°至85°的貫孔角度,且頂部臨界尺寸(CD)大約是11.22微米至13.74微米。
請參考圖10,根據一些實施例繪示出在圖案化製程中對曝光於GHI-line波長對比I-line波長的鈍化層,比較蝕刻後檢查(AEI)的臨界尺寸與顯影後檢查(after development inspection,ADI))的臨界尺寸對罩幕(mask)臨界尺寸的實驗數據。本領域的通常知識者可理解的是,相較於I-line,需要有GHI-line不同能量的應用以便比較結果。圖10顯示小貫孔開口,例如,當GHI-line曝光,低溫固化聚醯亞胺導致不正常貫孔輪廓,而使得貫孔開口小於15微米。如圖10所示,GHI-line曝光的顯影後檢查(ADI)臨界尺寸(CD)的輪廓不同於蝕刻後檢查(AEI)臨界尺寸(CD)的輪廓。作為對比,在相同情況下,I-line曝光的低溫固化聚醯亞胺不具有不正常貫孔輪廓。例如,I-line曝光的顯影後檢查(ADI)臨界尺寸(CD)輪廓跟隨著(track)蝕刻後檢查(AEI)臨界尺寸(CD)輪廓。I-line曝光可解決或減輕發生於GHI-line曝光在小貫孔開口(小於15微米)內且蝕刻後檢查(AEI)目標厚度(THK)大於7微米的不正常的低溫固化聚醯亞胺貫孔輪廓問題。可理解的是,不正常貫孔輪廓導致不連續的種子層沉積在貫孔開口內。這會導致填入貫孔開口的導電材料具有裂縫(cracks)與空洞(voids),且更進一步導致導電材料的上層沉(dip)到中間位置。
低溫固化聚醯亞胺利用I-line曝光的另一個優點是I-line的景深(depth-of-focus,DoF)可比I-line的景深更大。例如,對10微米貫孔開口且蝕刻後檢查(AEI)的目標厚度(THK)大於7微米而言,I-line的景深(DoF)是16微米,GHI-line的景深(DoF)是4微米。此外,目標蝕刻後檢查(AEI)的目標厚度(THK)可從GHI-line曝光的5微米增加至I-line曝光的7微米。
另一個優點是,相較於GHI-line曝光,因為I-line的單波長誘使光線散射,I-line曝光的低溫固化聚醯亞胺可減緩發生於開口或貫孔的基部的底腳效應(footing effect),。因此,由於底腳效應減緩,I-line曝光可降低罩幕臨界尺寸(CD)。
請再參閱圖5A至圖5B,這些圖更指出凸塊下金屬519與第三外連接件517的形成以電性連接於第三重佈線層513。在實施例中,各凸塊下金屬519可包括三層導電材料,如鈦層、銅層與鎳層。然而,本領域的通常知識者可知道許多適當的材料與層的配置,如可用來形成凸塊下金屬519的鉻/鉻銅合金/銅/金的配置、鈦/鈦鎢/銅的配置或銅/鎳/金的配置。任何可用在凸塊下金屬519的適當的材料或是材料層都被囊括在這些實施例中。
在一實施例中,凸塊下金屬519藉由形成在第三重佈線層513上方且填入於穿過第四重佈線鈍化層515的開口內部的各層而被創造。各層可透過電鍍製成形成,如電化學電鍍,但可依據所需材料而以如濺鍍、蒸鍍或電漿輔助化學氣相沈積等其他形成方式形成。凸塊下金屬519的厚度大約可介於0.7微米至10微米之間,如5微米。
在一實施例中,第三外連接件517可配置在凸塊下金屬519上,且可以包括如焊料等共熔材料的球形柵格陣列(BGA),但任何適當的材料也可被使用。在一實施例中,第三外連接件517為焊球,第三外連接件517可透過植球製程被形成,如直接植球製程。交替地,焊球可透過利用任何適當的方法(如蒸鍍、電鍍、印刷、焊料轉換)先形成錫層,再透過回焊的方式塑形成所欲的凸塊狀而被形成。一旦形成第三外連接件517,可進行測試以確保結構能更進一步進行處理。
請參閱圖11,其繪示第一半導體元件201與第二半導體元件301在分離(debond)於第一載具基板101之後。需注意的是,在分離之前,第三外連接件517與包括有第一半導體元件201與第二半導體元件301的結構可被附接到環狀(ring)結構(未繪示於圖11)。環狀結構可是金屬環,用來在分離過程中與之後提供結構上的支撐與穩定性。在一實施例中,第三外連接件517、第一半導體元件201及第二半導體元件301透過例如是紫外光膠帶(ultraviolet tape,未繪示於圖11)附接於環形結構,但任何其他適當的黏著層或附接件均可被使用。
一旦第三外連接件517與包括有第一半導體元件201與第二半導體元件301的結構被附接到環狀結構,第一載具基板101可被分離於包括有第一半導體元件201與第二半導體元件301的結構,例如透過熱製程去改變黏著層103的黏性。在特定的實施例中,能量源如紫外光(UV)雷射、二氧化碳雷射或紅外光(IR)雷射被利用來照射且加熱黏著層103直到黏著層103至少失去部分黏性。一旦完成,第一載具基板101與黏著層103可物理性地分離且移除於包括有第三外連接件517、第一半導體元件201與第二半導體元件301的結構。
然而,利用環狀結構來支撐第三外連接件517只是其中一個實施方法。在其他的實施例中,第三外連接件517可透過第一膠體附接於第二載具基板。在一實施例中,第二載具基板相似於第一載具基板101,但也可不同。一旦附接,黏著層103可被照射且黏著層103與第一載具基板101可被物理性移除。
請繼續參閱圖11,其繪示聚合物層105的圖案化以外露貫孔111(連同第一種子層107)。在一實施例中,聚合物層105可利用如雷射鑽孔(laser drilling)製程來圖案化。在此方法中,如光熱轉換(light-to-heat conversion,LTHC)層或雷射切割保護(hogomax)層的保護層(分別未繪示於圖11)為聚合物層105上的第一沉積。一旦被保護,雷射直接朝向聚合物層105欲被移除的部分以暴露出重疊的這些貫孔111。在雷射鑽孔製程中,鑽孔能量可以在0.1毫焦耳至30毫焦耳之間,且鑽孔角度相較於聚合物層105的法線約在0度(垂直於聚合物層105)至85度之間。在一實施例中,進行圖案化以形成在貫孔111上的開口,其寬度大約介於100微米至300微米之間,如大約是200微米。
在另一實施例中,聚合物層105可以下列步驟被圖案化(未各別繪示於圖11),藉由先施加光阻至聚合物層105,接著於圖案化能量源(例如,圖案化光源)曝光光阻以誘發化學反應,從而誘發光阻曝光於圖案化光源的部位發生物理變化。顯影劑接著施加在被曝光的光阻,以視欲產生的圖案利用物理變化選擇性地移除光阻被曝光的部分或未被曝光的部分,且重疊於聚合物層105的曝光部分可透過例如是乾式蝕刻製程被移除。然而,可使用任何其他適當的方法來圖案化聚合物層105。
操作時,第三外連接件517可分離於環狀結構,先藉由例如使用第二紫外光膠帶的方式連接第一封裝700至第二環狀結構。一旦連接,紫外光膠帶可被紫外光照射,一旦紫外光膠帶喪失黏性,第三外連接件517可物理性地分離於環狀結構。
在結構上進行單體化(singulation)以形成第一整合型扇出堆疊式封裝(InFO-POP)結構。在一實施例中,單體化可透過雷射或鋸片(未繪示)切割介於貫孔111之間的包封體401與聚合物層105來完成,從而將一部分分離於其他部分以形成帶有第二半導體元件301的第一整合型扇出堆疊式封裝結構。然而,本領域的通常知識者可知道,利用鋸片去單體化第一整合型扇出堆疊式封裝結構只是其中一種實施例,並不以此為限。例如也可採用一道或多道蝕刻等其他方法來分離出第一整合型扇出堆疊式封裝結構。第一整合型扇出堆疊式結構可透過這些方法或任何其他適當的方法來單體化。
圖12繪示第一封裝700的連接。在一實施例中,第一封裝700可包括第三基板701、第三半導體元件703、第四半導體元件705(連接至第三半導體元件703)、多個第三接墊707、第二包封體709及多個第四外部連接711。在一實施例中,第三基板701可例如是包括內部內連接(internal interconnects,例如,包括穿過基板貫孔715)的封裝基板,以將第三半導體元件703與第四半導體元件705連接於貫孔111。
替換地,第三基板701可以是中介層(interposer),作為中間基板以連接第三半導體元件703與第四半導體元件705至貫孔111。在本實施例中,第三基板701可例如是矽基板、摻雜或不摻雜或是絕緣層上矽(silicon-on-insulator,SOI)基板的主動層。然而,第三基板701可也是玻璃基板、陶瓷基板、聚合物基板或可提供適當保護且/或內連線功能的任何其他基板。第三基板701可使用這些或其他任何適當的材料。
第三半導體元件703可是有預設目的的半導體元件如邏輯晶粒、中央處理器晶粒、記憶體晶粒(例如,DRAM晶粒)或其組合或類似物。在一實施例中,第三半導體元件703包括多個積體電路元件(未繪示),如電晶體、電容、電感、電阻、第一金屬化層及欲有特定功能的類似物。在一實施例中,第三半導體元件703被設計且製造為與第一半導體元件201結合或一起運作。
第四半導體元件705可相似於第三半導體元件703。例如,第四半導體元件705可是有預設目的的半導體元件(例如,DRAM晶粒)且包括有特定功能的多個積體電路元件。在一實施例中,第四半導體元件705被設計且製造為與第一半導體元件201且/或第三半導體元件703結合或一起運作。
第四半導體元件705可被連接於第三半導體元件703。在一實施例中,第四半導體元件705只有物理性連接於第三半導體元件703,如使用黏著的方式。在本實施例中,第四半導體元件705與第三半導體元件703可例如使用導線連接的方式電性連接至第三基板701,但任何適當的電連接方式均可被使用。
交替地,第四半導體元件705可被物理性且電性連接至第三半導體元件703。在本實施例中,第四半導體元件705可包括第四外部連接(未繪示於圖12)連接於第三半導體元件703上的第五外部連接(未繪示於圖12)以使第四半導體元件705內連接於第三半導體元件703。
第三接墊707可被形成在第三基板701上以在第三半導體元件703與例如是第四外部連接711之間形成電性連接。在一實施例中,第三接墊707可被形成在第三基板701上且電性連接於第三基板701內的電性佈線(如穿過基板貫孔715)。第三接墊707可包括鋁,但其他材料如銅也可被使用。第三接墊707可透過沉積被形成,如濺鍍以形成材料層(未繪示),且材料層的部分可接著透過適當的方法被移除(如微影罩幕與蝕刻)以形成第三接墊707。然而,第三接墊707可用其他適當的製程來形成。第三接墊707的厚度可大約介於0.5微米至4微米之間,如大約是1.45微米。
第二包封體709可被用來包封與保護第三半導體元件703、第四半導體元件705及第三基板701。在一實施例中,第二包封體709可以是模塑化合物且可透過模塑元件(未繪示於圖12)被配置。例如,第三基板701、第三半導體元件703及第四半導體元件705可被配置在模塑元件的空穴內,空穴可被嚴密地密封。第二包封體709可在空穴被嚴密地密封之前配置在空穴內或是可經注入孔注入空穴內。在一實施例中,第二包封體709可模塑化合物樹脂,如聚醯亞胺、聚苯硫醚(PPS)、聚醚醚酮(PEEK)、聚酯(PES)、耐熱水晶樹脂(heat resistant crystal resin)或其結合或類似物。
一旦第二包封體709被配置在空穴內,第二包封體709包封住環繞第三基板701、第三半導體元件703及第四半導體元件705的區域,第二包封體709可被固化以硬化第二包封體709而提供最佳化保護。精準的固化製程至少部分決定於第二包封體709所選用的材料,在一實施例中,第二包封體709選用模塑化合物,固化可透過如加熱第二包封體709到約100ºC至130ºC之間的溫度而發生,如大約125ºC且約60秒至3000秒,如大約是600秒。此外,引發劑且/或催化劑可被包括在第二包封體709內以更好地控制固化製程。
然而,如本領域的通常知識者所知,上面僅描述其中一種固化製程,並不侷限於此。在其他固化製程中,如照射或是甚至允許第二包封體709在絕熱溫度硬化也可被使用。任何適當的固化製程可被使用且被包括在本案的範疇之中。
在一實施例中,第四外部連接711可被形成以提供介於第三基板701與例如是貫孔111之間的外部連接。第四外部連接711可以是連接凸塊,如微凸塊或控制塌陷高度晶片連接(controlled collapse chip connection,C4)凸塊,且可包括如錫、或如銀或銅等其他適當的材料。在一實施例中,第四外部連接711為錫焊球,第四外部連接711可藉由先透過任何適當的方法(如蒸鍍、電鍍、印刷、焊料轉換、植球等)先形成厚度約為100微米的錫層,一旦錫層形成在結構上,透過回焊的方式塑形成所欲的凸塊狀而被形成。
一旦形成第四外部連接711,第四外部連接711對準且配置在貫孔111上,而完成連接。例如,在一實施例中,第四外部連接711是焊球,連接製程可包括迴焊製程,第四外部連接711的溫度藉以提升至第四外部連接711液化且能流動的溫度點,在第四外部連接711重新固化後,第一封裝700便連接至貫孔111。
在一實施例中,半導體元件的製造方法包括在介電層上方定位圖案化罩幕的步驟。介電層包括低溫固化聚醯亞胺。方法更包括在I-line步進對準曝光機內以I-line波長藉由圖案化罩幕來曝光介電層的第一表面,及顯影介電層以形成開口的步驟。
在另一實施例中,半導體元件的製造方法包括在種子層上形成介電層的步驟,在介電層上方定位圖案化罩幕,其中介電層包括低溫固化聚醯亞胺。方法更包括透過圖案化罩幕在I-line步進對準曝光機內的光曝光介電層的第一表面,顯影介電層以形成延伸至種子層的上表面的開口,及在開口內形成接觸多個貫孔的步驟。
在其他實施例中,半導體元件包括第一重佈線層及位於第一重佈線層上的第一重佈線鈍化層。第一重佈線鈍化層包括上表面與相對的下表面,上表面具有形成於其內的內縮(indentions)。內縮的角度大約介於2度至8度。第一重佈線鈍化層更包括外露局部第一重佈線層的開口。開口的上角落圓化(rounded)大約在0.3Π至0.5Π的弧度範圍內。
在一實施例中,低溫固化聚醯亞胺是負型材料。低溫固化聚醯亞胺包括N-甲基吡咯酮(N-methyl-2-pyrrolidone,NMP)、聚酰胺酸酯(polyamic acid ester)及乳酸乙酯(ethyl lactate,EL)。低溫固化聚醯亞胺包括四乙二醇二甲基丙烯酸酯(tetraethylene glycol dimathacrylate)。曝光介電層的第一表面而在介電層的上表面形成大約是2度至8度的角度。介電層的厚度約是8微米。使用步進對準曝光機且使用大約是0.1至0.18的數值孔徑(numerical aperture)的範圍來曝光介電層的第一表面。介電層的第一表面被I-line波長曝光大約150毫焦耳/平方公分至500毫焦耳/平方公分。形成具有平均目標厚度約為7微米的開口。開口的側壁的角度約為85度。開口的側壁的角度大於75度。開口的寬度小於或等於15微米。
以上概述了多個實施例的特徵,使本領域具有通常知識者可更佳了解本揭露的態樣。本領域具有通常知識者應理解,其可輕易地使用本揭露作為設計或修改其他製程與結構的依據,以實行本文所介紹的實施例的相同目的及/或達到相同優點。本領域具有通常知識者還應理解,這種等效的配置並不悖離本揭露的精神與範疇,且本領域具有通常知識者在不悖離本揭露的精神與範疇的情況下可對本文做出各種改變、置換以及變更。
101‧‧‧第一載具基板
103‧‧‧黏著層
105‧‧‧聚合物層
107‧‧‧第一種子層
109‧‧‧光阻
111‧‧‧貫孔
201‧‧‧第一半導體元件
203‧‧‧第一基板
205‧‧‧第一金屬化層
207‧‧‧第一接墊
209‧‧‧第一外連接件
211‧‧‧第一鈍化層
217‧‧‧晶粒貼合膜
301‧‧‧第二半導體元件
303‧‧‧第二基板
305‧‧‧第二金屬化層
307‧‧‧第二接墊
309‧‧‧第二外連接件
311‧‧‧第二鈍化層
401‧‧‧包封體
500‧‧‧重佈線結構
501‧‧‧第一重佈線鈍化層
502、504‧‧‧虛線框
503‧‧‧第一重佈線貫孔
505‧‧‧第一重佈線層
507‧‧‧第二重佈線鈍化層
509‧‧‧第二重佈線層
511‧‧‧第三重佈線鈍化層
513‧‧‧第三重佈線層
515‧‧‧第四重佈線鈍化層
517‧‧‧第三外連接件
519‧‧‧凸塊下金屬
521‧‧‧外連接件
523‧‧‧開口
601‧‧‧光微影系統
603‧‧‧光源
605‧‧‧光
607‧‧‧聚光透鏡
609‧‧‧光罩
611‧‧‧光罩台
613‧‧‧投影透鏡
615‧‧‧鈍化層
617‧‧‧封裝
619‧‧‧封裝台
700‧‧‧第一封裝
701‧‧‧第三基板
703‧‧‧第三半導體元件
705‧‧‧第四半導體元件
707‧‧‧第三接墊
709‧‧‧第二包封體
711‧‧‧第四外部連接
715‧‧‧穿過基板貫孔
103‧‧‧黏著層
105‧‧‧聚合物層
107‧‧‧第一種子層
109‧‧‧光阻
111‧‧‧貫孔
201‧‧‧第一半導體元件
203‧‧‧第一基板
205‧‧‧第一金屬化層
207‧‧‧第一接墊
209‧‧‧第一外連接件
211‧‧‧第一鈍化層
217‧‧‧晶粒貼合膜
301‧‧‧第二半導體元件
303‧‧‧第二基板
305‧‧‧第二金屬化層
307‧‧‧第二接墊
309‧‧‧第二外連接件
311‧‧‧第二鈍化層
401‧‧‧包封體
500‧‧‧重佈線結構
501‧‧‧第一重佈線鈍化層
502、504‧‧‧虛線框
503‧‧‧第一重佈線貫孔
505‧‧‧第一重佈線層
507‧‧‧第二重佈線鈍化層
509‧‧‧第二重佈線層
511‧‧‧第三重佈線鈍化層
513‧‧‧第三重佈線層
515‧‧‧第四重佈線鈍化層
517‧‧‧第三外連接件
519‧‧‧凸塊下金屬
521‧‧‧外連接件
523‧‧‧開口
601‧‧‧光微影系統
603‧‧‧光源
605‧‧‧光
607‧‧‧聚光透鏡
609‧‧‧光罩
611‧‧‧光罩台
613‧‧‧投影透鏡
615‧‧‧鈍化層
617‧‧‧封裝
619‧‧‧封裝台
700‧‧‧第一封裝
701‧‧‧第三基板
703‧‧‧第三半導體元件
705‧‧‧第四半導體元件
707‧‧‧第三接墊
709‧‧‧第二包封體
711‧‧‧第四外部連接
715‧‧‧穿過基板貫孔
圖1根據一些實施例繪示貫孔的形成。 圖2根據一些實施例繪示第一半導體元件。 圖3根據一些實施例繪示第一半導體元件及第二半導體元件的配置。 圖4根據一些實施例繪示貫孔、第一半導體元件及第二半導體元件的包封體。 圖5A至圖5B根據一些實施例繪示重佈線結構的形成。 圖6根據一些實施例繪示用來形成重佈線結構的光微影系統。 圖7A至圖7D根據一些實施例表示局部的重佈線結構的象形視圖(pictographic view)。 圖8A根據一些實施例繪示出貫孔的平均目標厚度(THK)相對於顯影時間的示意圖。 圖 8B根據一些實施例繪示出鈍化層的膜損(film loss)相對於顯影時間的示意圖。 圖9A至圖9B根據一些實施例繪示出在圖案化製程的不同階段中比較曝光於GHI-line波長對比I-line波長的鈍化層的平均目標厚度(THK)的實驗數據。 圖10根據一些實施例繪示出在圖案化製程中對曝光於GHI-line波長對比I-line波長的鈍化層,比較蝕刻後檢查(after etch inspection,AEI)的臨界尺寸與顯影後檢查(after development inspection,ADI)的臨界尺寸對比罩幕(mask)臨界尺寸的實驗數據。 圖11根據一些實施例繪示貫孔的曝光。 圖12根據一些實施例繪示封裝的連接。
501‧‧‧第一重佈線鈍化層
502、504‧‧‧虛線框
503‧‧‧第一重佈線貫孔
505‧‧‧第一重佈線層
507‧‧‧第二重佈線鈍化層
509‧‧‧第二重佈線層
511‧‧‧第三重佈線鈍化層
513‧‧‧第三重佈線層
515‧‧‧第四重佈線鈍化層
517‧‧‧第三外連接件
519‧‧‧凸塊下金屬
521‧‧‧外連接件
523‧‧‧開口
Claims (1)
- 一種半導體元件的製造方法,包括: 在介電層上方定位圖案化罩幕,其中所述介電層包括低溫固化聚醯亞胺; 在I-line步進對準曝光機(I-line stepper)內以I-line波長藉由所述圖案化罩幕來曝光所述介電層的第一表面;以及 顯影所述介電層以形成開口。
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TWI719547B (zh) * | 2018-10-31 | 2021-02-21 | 台灣積體電路製造股份有限公司 | 半導體元件及其形成方法 |
US11031289B2 (en) | 2018-10-31 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and methods of forming the same |
US11837502B2 (en) | 2018-10-31 | 2023-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and methods of forming the same |
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US10090194B2 (en) | 2018-10-02 |
TWI751996B (zh) | 2022-01-11 |
US20170271203A1 (en) | 2017-09-21 |
CN107203099A (zh) | 2017-09-26 |
CN107203099B (zh) | 2022-09-13 |
US11177165B2 (en) | 2021-11-16 |
US20190035680A1 (en) | 2019-01-31 |
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