TW201726962A - Film forming apparatus - Google Patents

Abstract

The present invention provides a film forming apparatus which can inhibit temperature increase of a substrate. This film forming apparatus includes: a film forming part 20 used to discharge the particles containing film-forming material toward the substrate S; a cooling part used to cool down the cooling part member 33; and an arrangement part 10 used to arrange the substrate S to be separated from the cooling part member 33 and facing the cooling part member 33.

Description

Film forming device

The technology disclosed in the present invention relates to a film forming apparatus which discharges particles including a film forming material onto a substrate to form a film on the substrate.

In an organic electroluminescent display of one of the flat displays, a plurality of pixels including an organic light emitting element and a thin film transistor are formed, and each pixel is connected to a wiring extending from the driving circuit. The various films and wirings constituting each pixel are formed by a film forming apparatus (a vapor deposition apparatus or a sputtering apparatus) (for example, Patent Document 1 and Patent Document 2).

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] JP-A-2008-274366

[Patent Document 2] JP-A-2012-174609

[Problems to be solved by the invention]

In the case where a film is formed by a sputtering apparatus, since the sputtering particles having high energy reach the substrate, the film is deposited on the substrate. Therefore, the substrate temperature rises due to the energy of the conflicting sputtered particles being transmitted to the substrate. Further, in the case where the film is formed by the vapor deposition device, since the material evaporated by heating reaches the substrate, the film is deposited on the substrate. Therefore, as with the sputtering apparatus, since the energy of the evaporated material is transmitted to the substrate, and the energy of the evaporation source itself is transmitted to the substrate, the substrate temperature rises. Such a substrate temperature rises, and the heat resistance of the substrate or the change of the film formation conditions are forced to be increased. Therefore, the film forming apparatus needs to cool the substrate.

The technology disclosed in the present invention provides a film forming apparatus capable of suppressing an increase in substrate temperature.

An aspect of the film forming apparatus of the present invention includes: a film forming portion that discharges particles including a film forming material onto a substrate; a cooling portion that cools the cooling member; and an arrangement portion that arranges the substrate from The aforementioned cooling member separates and faces the aforementioned cooling member.

In one aspect of the film forming apparatus of the technology disclosed in the present invention, since the cooling member cooled by the cooling portion faces the substrate, the condition in which the substrate temperature rises is suppressed. At this time, since the substrate and the cooling member do not contact each other, when the substrate is cooled, cracking or chipping of the substrate due to contact between the substrate and the cooling member is suppressed.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, a vacuum chamber is further provided to house the cooling member. Then, the cooling unit cools the cooling member at a temperature higher than a pressure in the vacuum chamber of the gas contained in the vacuum chamber.

In other aspects of the film forming apparatus of the presently disclosed technology, the temperature of the cooling member sets the gas vapor pressure at the temperature of the cooling member to a higher value than in the vacuum chamber. Therefore, it is difficult for the gas in the vacuum chamber to adhere to the cooling member. As a result, the adhesion of the gas in the vacuum chamber to the cooling member is suppressed, so that not only the gas state in the vacuum chamber but also the degree of cooling by the cooling member is hard to change.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the cooling unit sets the temperature of the cooling member to 100 K or more and less than 273 K.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the film formation object is easily cooled compared to the structure in which the temperature of the cooling member is set to 273 K or more.

In another aspect of the film forming apparatus of the present invention, the gas includes argon gas, and the cooling unit sets the temperature of the cooling member to be 100 K or more and 250 K or less.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, since the temperature of the cooling member is set to be 100 K or more and 250 K or less, the argon gas adsorbed to the cooling member is more reliably suppressed.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the cooling portion cools the cooling member by adiabatic expansion of the gas.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, for example, compared with a structure in which a cooling member is cooled by a liquid refrigerant such as cooling water, leakage of a refrigerant such as a refrigerant into a film forming apparatus is prevented, resulting in contamination of a film forming apparatus. The situation.

In another aspect of the film forming apparatus of the present technology, the black portion is a surface of the cooling member facing the substrate.

In another aspect of the film forming apparatus of the technology disclosed by the present invention, since the surface of the cooling member is black, the surface of the cooling member is, for example, a structure such as white having a lower emissivity than black, from the cooling member. Thermal reflection toward the substrate is suppressed. Therefore, the temperature rise of the substrate is more suppressed.

In another aspect of the film forming apparatus of the present invention, the cooling member is one of a plurality of cooling members cooled by the cooling unit, and the plurality of cooling members are disposed to face the aforementioned arrangement of the arrangement portion. Different parts of the substrate.

According to another aspect of the film forming apparatus of the technology disclosed by the present invention, the plurality of cooling members face different portions of the substrate, so that the structure facing a portion of the substrate in one of the substrates is in the plane of the substrate The variation in the degree of cooling of the substrate is suppressed. As a result, the deviation of the in-plane temperature of the substrate is suppressed.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the shifting portion further includes a position of the cooling device for the substrate.

In other aspects of the film forming apparatus of the technology disclosed in the present invention, the cooling range can be expanded in the substrate as compared with the structure in which the cooling member is fixed to the substrate.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the shifting portion changes a distance between the substrate and the cooling member.

According to another aspect of the film forming apparatus of the technology disclosed in the present invention, since the distance between the cooling member and the substrate is changed, the extent to which the substrate is cooled by the cooling member can be adjusted.

In another aspect of the film forming apparatus of the present technology, the shifting portion can move the cooling member to a different plurality of positions, and before and after the position of the cooling member is changed, the substrate and the cooling member are The distance between them is the same.

According to other aspects of the film forming apparatus of the technology disclosed in the present invention, even if the position of the cooling member for the substrate is changed, since the distance between the substrate and the cooling member is not changed, the degree of substrate cooling by the cooling member does not change. . Therefore, the variation in the degree of cooling of the substrate by the cooling member is suppressed as compared with the structure in which the distance between the substrate and the cooling member is changed.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the film forming portion discharges the film forming material to the substrate, and the substrate is exposed to the plasma.

In other aspects of the film forming apparatus of the technology disclosed in the present invention, even when the substrate is exposed to the plasma, the temperature rise of the substrate is suppressed.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the film forming portion discharges the forming material to the substrate by evaporating the film forming material.

According to another aspect of the film forming apparatus of the technology disclosed in the present invention, even if the forming material heated and evaporated is discharged to the substrate, the temperature rise of the substrate is suppressed.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, the gas supply unit further includes a gas supply unit that supplies the gas to the substrate side.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, in addition to cooling by the cooling unit, heat exchange between the gas and the substrate is performed. Therefore, under the premise that the driving state of the cooling unit is the same, the gas is used. The degree of heat exchange is difficult to make the substrate temperature higher.

In another aspect of the film forming apparatus of the present invention, the vacuum forming chamber further includes a vacuum chamber that accommodates the film forming portion and the cooling member, and the film forming portion and the cooling member are disposed at positions facing each other. The arranging unit arranges the substrate between the film forming portion and the cooling member.

According to another aspect of the film forming apparatus of the technology disclosed in the present invention, when the film forming portion forms a film on the substrate, the temperature of the substrate is increased.

In another aspect of the film forming apparatus of the present invention, the arrangement portion is configured to arrange one of the two arrangement portions of the substrate, and the film formation device further includes: a cooling member displacement portion that changes along the displacement direction In the position of the cooling member, the film formation portion and the two arrangement portions are arranged in this order along the displacement direction, and among the two arrangement portions, the arrangement portion close to the film formation portion is the first arrangement portion. The arrangement portion that is away from the film formation portion is a second arrangement portion, and the cooling member displacement portion is at a first position at a position between the first arrangement portion and the second arrangement portion in the displacement direction, and The position of the cooling member is changed between a second position in which the second arrangement portion is farther from the film formation portion, and the first arrangement portion is disposed in the state in which the substrate is placed. In one position, in the second arrangement portion, the cooling member is placed in the second position in a state in which the substrate is placed.

According to another aspect of the film forming apparatus of the technology disclosed in the present invention, the cooling member can cool both the substrate disposed in the first arrangement portion and the substrate disposed in the second arrangement portion.

In another aspect of the film forming apparatus of the present invention, the first vacuum chamber includes the film forming portion, and the second vacuum chamber houses the cooling member.

In another aspect of the film forming apparatus of the technology disclosed in the present invention, after forming a film on the film forming portion to form a film on the substrate before or in the film forming portion, the substrate temperature can be lowered.

10‧‧‧Configuration Department

11‧‧‧Substrate rotation axis

11D‧‧‧Substrate motor drive circuit

11M‧‧‧Substrate motor

12‧‧‧ substrate table

12a‧‧ pin hole

20‧‧‧ Film Formation

21‧‧‧ Targets

22‧‧‧ Backplane

23‧‧‧ Target power supply

24‧‧‧Sputter gas supply department

24D‧‧‧Supply drive circuit

30‧‧‧Cooling mechanism

31‧‧‧Cryogenic pump

31D‧‧‧ pump drive circuit

32‧‧‧Connecting parts

33‧‧‧cooling parts

33b‧‧‧Back

33f‧‧‧ surface

33h‧‧‧Cooling gas supply hole

34‧‧‧Cooling rotary axis

34D‧‧‧Cooling motor drive circuit

34M‧‧‧Cooling motor

35‧‧‧Cooling gas supply department

35a‧‧‧Cooling gas piping

35D‧‧‧Cooling gas supply drive circuit

41‧‧‧Cooling layer

42‧‧‧buffer layer

43‧‧‧Black layer

50, 70‧‧‧ Sputtering device

50a‧‧‧film formation channel

50b‧‧‧Recovery channel

50C, 70C‧‧‧ control device

51, 72‧‧‧ Move out of the room

52, 73‧‧‧Pre-treatment room

53, 74‧‧‧ first sputtering chamber

53a, 74a‧‧‧ vacuum tank

53b, 74c‧‧‧ film side wall

53c‧‧‧Exhaust side wall

53h‧‧‧cooling holes

54, 75‧‧‧Second sputtering chamber

55, 74g‧‧‧ gate valve

56‧‧‧Exhaust Department

56D‧‧‧Exhaust drive circuit

60D‧‧‧Motor drive circuit

60M‧‧·shift motor

61‧‧‧ telescopic bladder

62‧‧‧Shift track

63‧‧‧Shift shaft

70‧‧‧ Sputtering device

71‧‧‧Transport room

71R‧‧‧Transporting automaton

74b‧‧‧Transport side wall

74d‧‧‧上壁

76‧‧‧ Third Sputtering Room

81‧‧‧ lifting plate

82‧‧‧lifting pin

FM‧‧‧ forming materials

G‧‧‧Cooling gas

S‧‧‧Substrate

Sb‧‧‧Back

Sf‧‧‧ surface

T‧‧‧ bracket

The first drawing is a block diagram showing the structure of a film forming apparatus according to an embodiment of the present technology.

The second drawing is an enlarged cross-sectional view showing a part of a cross-sectional structure of a cooling member and a connecting member provided in the film forming apparatus of the embodiment.

The third drawing shows a block diagram in which the entire structure of the sputtering apparatus which is an example of the film forming apparatus is stored in the substrate of the film forming apparatus.

The fourth figure is a block diagram showing the internal structure of the first sputtering chamber provided in the sputtering apparatus.

The fifth figure is a block diagram showing the electrical structure of the sputtering apparatus.

The sixth diagram is a diagram showing the action of the moving state of the cooling member.

The seventh diagram is an action diagram showing the moving state of the cooling member.

The eighth diagram is a block diagram showing the overall configuration of a cluster type sputtering apparatus which is an example of a film forming apparatus.

The ninth diagram is a block diagram showing the internal structure of the first sputtering chamber provided in the sputtering apparatus.

The tenth diagram is a block diagram showing the electrical structure of the sputtering apparatus.

The eleventh diagram shows the action of the cooling member and the substrate stage in a moving state.

Fig. 12 is a graph showing the transition of the substrate temperature of the examples and the comparative examples.

The thirteenth diagram schematically shows a block diagram of a cooling portion of a film forming apparatus according to a modification.

Fig. 14 is a block diagram showing the electrical configuration of a sputtering apparatus according to a modification.

[Structure of film forming apparatus]

The structure of the film forming apparatus of one embodiment will be described with reference to the first and second drawings.

As shown in the first figure, the film forming apparatus includes an arranging unit 10 that arranges the plate-shaped substrate S in the film forming apparatus, and a film forming unit 20 that discharges the film forming material FM to the substrate S. Surface Sf. The substrate S particles are a rectangular glass substrate extending toward the front side of the paper. The width of the substrate S is 2200 mm along the surface of the paper, and is 2500 mm toward the front side of the paper. The substrate S is not limited to a glass substrate, and may be a ceramic substrate or a metal substrate. Further, the shape of the substrate S is not limited to a rectangular shape, and may be a disk shape or a sheet shape, and the size of the substrate S may be larger or smaller than the above-described size. Among the plurality of surfaces constituting the substrate S, the surface on which the film forming material is received is set as the surface Sf of the substrate S, and the surface on the opposite side of the substrate S and the surface Sf is set as the back surface Sb.

The arranging portion 10 arranges the substrate S to face the film forming portion 20 at a position away from the film forming portion 20 by the substrate S being in contact with one or more places. The film forming portion 20 may supply the forming material from a direction substantially parallel to the surface SF of the substrate S, or may supply the forming material from the vertical direction of the surface Sf. The film formation portion 20 may be configured such that the film formation material FM is deposited on the substrate S by sputtering of a target material, or the film formation material FM may be vapor-deposited on the substrate S by heating and evaporation of the material FM.

In the film forming apparatus, the cooling mechanism 30 that cools the substrate S faces the back surface Sb of the substrate S at a position away from the back surface Sb of the substrate S. The cooling mechanism 30 includes a cryopump 31 as a cooling unit, and a cooling member 33 having a rectangular plate shape extending forward of the paper surface and disposed at a position away from the back surface Sb of the substrate S, and a connecting member 32. The cryopump 31 is connected to the cooling member 33. One end of the connecting member 32 is connected to the cooling surface of the cryopump 31, and the other end of the connecting member 32 is connected to the back surface of the cooling portion 33. The material for forming the connecting member 32 has a high thermal conductivity suitable for transmitting the heat of the cooling member 33 to the cooling surface of the cryopump 31, and is made of a metal such as copper.

The cooling mechanism 30 cools the cooling member 33 via the connection member 32 with the cryopump 31 that is adiabatically expanded by the gas. That is, since the cooling surface of the cooling source (the cryopump 31) of the cooling member 33 is cooled by the adiabatic expansion of the gas, the cooling member 33 is cooled via the connecting member 32 of the solid structure. Therefore, for example, compared with the structure in which the liquid refrigerant such as cooling water cools the cooling member 33 by the cooling member 33, such a refrigerant may be suppressed by leaking a contamination film forming device in the film forming apparatus. Further, since the cooling member 33 is disposed apart from the back surface Sb of the substrate S, the contact between the substrate S and the cooling member 33 is damaged due to the structure in which the cooling member 33 is in contact with the back surface Sb of the substrate S, and cracks or nicks are suppressed. .

However, the cooling mechanism 30 may be configured to cool the cooling member 33 by passing the liquid refrigerant through the cooling member 33. The cooling mechanism 30 includes a refrigerant cooling unit that cools the refrigerant, and a circulation unit that circulates the refrigerant in the cooling mechanism 30. For the refrigerant, for example, a fluorine-based solution (that is, an HFC-based solution), an ethylene glycol solution, cooling water, or the like is used.

In the case where a fluorine-based solution is used, the temperature of the cooling member 33 is set to, for example, 253 K or more and 313 K or less, preferably 253 K or more and less than 273 K. For the fluorine-based solution, for example, Fluorinert (registered trademark) FC-3283 (manufactured by 3M Company) and Galden (registered trademark) HT135 (manufactured by Solvay Solexis Co., Ltd.) are used. In the case where an ethylene glycol solution is used, the temperature of the cooling member 33 is set to, for example, 253 K or more and 363 K or less, preferably 253 K or more and less than 273 K. Since the temperature of the cooling member 33 is set to less than 273 K, the substrate S is easily cooled as compared with a configuration in which the temperature of the cooling member 33 is set to 273 K or more by using, for example, water as a refrigerant.

As shown in the second figure, the cooling member 33 is formed by a multilayer structure in which the cooling layer 41, the buffer layer 42, and the black layer 43 are laminated in this order. The cooling layer 41 constitutes the back surface 33b of the cooling member 33, and the black layer 43 constitutes the cooling member 33. Surface 33f.

The material for forming the cooling layer 41 is preferably a material which easily conveys the temperature of the connecting member 32, and a metal such as copper is preferable. The buffer layer 42 is a layer that suppresses the peeling of the black layer 43 from the cooling layer 41. The thermal expansion coefficient of the material of the buffer layer 42 is preferably between the thermal expansion coefficient of the cooling layer 41 and the thermal expansion coefficient of the black layer 43. The material for forming the buffer layer 42 is preferably, for example, nickel. The black layer 43 is formed of a material having a high emissivity as compared with the other layers of the cooling member 33, and the emissivity of the material forming the black layer 43 is preferably 0.8 or more and 1 or less. Further, the entire black layer 43 may not be formed of a material having a high emissivity, and at least the surface 33f of the cooling member 33 may be formed of a material having a high emissivity. The material for forming the black layer 43 is preferably, for example, aluminum or carbon having an anodized film on the surface.

The surface 33f of the cooling member 33 facing the back surface Sb of the substrate S is the black layer 43, so that the surface of the cooling member 33 having a lower emissivity color can be directed from the surface 33f of the cooling member 33. The heat reflected by the back surface Sb of the substrate S becomes small. Therefore, the temperature rise of the substrate S can be further suppressed.

[Structure of Sputtering Device]

Referring to the third to seventh figures, a sputtering device as an example of a film forming apparatus will be described. structure.

As shown in the third figure, in the sputtering apparatus 50, the carry-in chamber 51, the pretreatment chamber 52, the first sputtering chamber 53, and the second sputtering chamber 54 are connected in a line between the vacuum chambers (each processing chamber). A gate valve 55 is installed.

In the carry-in/out chamber 51, the substrate S before film formation is carried in from the outside of the sputtering apparatus 50, and the formed substrate S is carried out to the outside of the sputtering apparatus 50. The pretreatment chamber 52 includes an exhaust portion 56 for exhausting the inside of the pretreatment chamber 52, and a cooling mechanism 30 for performing a specific pretreatment such as a heat treatment or a washing treatment on the substrate S before the film formation. Since the pretreatment chamber 52 is provided with the cooling mechanism 30, the substrate S can be cooled without performing the film formation process on the substrate S. The pretreatment chamber 52 may not include the cooling mechanism 30.

On one side surface of the first sputtering chamber 53, two exhaust portions 56 are mounted in parallel in the connection direction of the processing chamber, and a cooling mechanism 30 is mounted between the two exhaust portions 56 in the connecting direction. A film formation portion 20 having a target is mounted on the other side surface opposite to the one side surface. The first sputtering chamber 53 forms a specific film such as a copper film on the surface Sf of the substrate S. The second sputtering chamber 54 has the same structure as the first sputtering chamber 53, and the target forming material of the film forming portion 20 is different from that of the first sputtering chamber. The second sputtering chamber 54 forms a specific film such as a metal film or a metal compound film on the surface Sf of the substrate S on which the copper film is formed. A film other than the copper film may be formed in the first sputtering chamber 53, and a copper film may be formed in the second sputtering chamber 54 in the same manner as the first sputtering chamber 53.

In the sputtering apparatus 50, a film formation passage 50a and a recovery passage 50b extending in the connection direction are formed throughout the four processing chambers. Moreover, the film formation passage 50a is an example of the arrangement part 10 shown in the first figure. Further, the film formation passage 50a is an example of the first arrangement portion, and the recovery passage 50b is an example of the second arrangement portion. The film formation passage 50a is formed on the film formation portion 20 side of the bottom wall of the sputtering apparatus 50, and the recovery passage 50b is formed closer to the exhaust portion 56 side than the film formation passage 50a of the bottom wall of the sputtering apparatus 50. The film formation passage 50a and the recovery passage 50b are respectively constituted by, for example, a rail extending in the connecting direction, a plurality of rollers mounted with a certain interval for the rails, and a motor for rotating the drum. The film formation passage 50a supports and conveys the substrate S before or during film formation, and the recovery passage 50b supports and conveys the substrate S to be formed into a film. Further, in the second sputtering chamber 54, a channel changing portion that moves the substrate S disposed in the film formation path 50a to the recovery channel 50b is mounted.

When the sputtering apparatus 50 is carried into the substrate S, the film forming passage of the loading and unloading chamber 51 is carried out. The substrate S is placed 50a, and the substrate S is transferred from the carry-in/out chamber 51 along the film formation path 50a like the second sputtering chamber 54. Then, the sputtering apparatus 50 transports the substrate S from the film formation passage 50a to the recovery passage 50b by the passage changing portion in the second sputtering chamber 54. The sputtering apparatus 50 conveys the substrate S from the second sputtering chamber 54 to the loading/unloading chamber 51 along the recovery passage 50b.

The sputtering apparatus 50 may not include the pretreatment chamber 52, and may have two or more pretreatment chambers. Further, the sputtering apparatus 50 may have only one sputtering chamber, or may have three or more sputtering chambers.

[Structure of the first sputtering chamber]

The structure of the first sputtering chamber 53 will be described in more detail with reference to the fourth diagram. Further, the second sputtering chamber 54 is different from the first sputtering chamber 53 in that the target material forming material provided in the film forming portion 20 is the same.

As shown in the fourth figure, in the first sputtering chamber 53, the substrate S is formed in a state of standing substantially vertically. The film forming side wall 53b of the film forming portion 20 is mounted on the side wall of the vacuum chamber 53a of the first sputtering chamber 53, and a plurality of targets 21 are arranged side by side in the connecting direction, and the plurality of targets 21 are perpendicular to the connecting direction. The standing setting direction (the vertical paper direction in the fourth drawing) of (the left-right direction in the fourth drawing) extends. Each of the targets 21 is formed of, for example, a material containing copper as a main component. A backing plate 22 is fixed to each of the targets 21, and the backing plate 22 extends in the standing direction and is attached to the film forming side wall 53b. A target power source 23 that supplies electric power to the target 21 is connected to each of the back plates 22. A target power source 23 may be connected to each of the back plates 22, and a target power source 23 may be commonly connected to all of the back plates 22. A sputtering gas supply unit 24 is connected to the vacuum chamber 53a, and the sputtering gas supply unit 24 supplies a sputtering gas as a film forming gas. The sputtering gas is, for example, argon. The film formation unit 20 is composed of a target 21, a backing plate 22, a target power source 23, and a sputtering gas supply unit 24.

The exhaust side wall 53c facing the film formation side wall 53b has two exhaust portions 56 arranged in parallel in the connection direction. Each of the exhaust portions 56 is provided with, for example, a turbomolecular pump. A cooling mechanism 30 is disposed between the two exhaust portions 56 in the connecting direction on the film forming side wall 53b. The cryopump 31 of the cooling mechanism 30 is disposed outside the vacuum chamber 53a. The connecting member 32 is connected to the cooling member 33 disposed in the vacuum chamber 53a via a cooling hole 53h that penetrates the exhaust side wall 53c.

The bellows 61 is attached to the outer side surface of the exhaust side wall 53c, and the bellows 61 is formed in an annular shape surrounding the outer edge of the cooling hole 53h, and is attached to the end of the bellows 61 on the opposite side of the exhaust side wall 53c. Pump 31. The cooling hole 53h of the exhaust side wall 53c is closed by the cryopump 31 and the bellows 61. On the outer surface side of the exhaust side wall 53c, a shift rail 62 is attached, and the shift rail 62 extends in a shifting direction (upward and downward direction of the fourth drawing) perpendicular to both the connecting direction and the standing setting direction.

A displacement shaft 63 is attached to the cryopump 31, and the displacement shaft 63 has a rod shape extending from the cryopump 31 toward the displacement rail 62 in the connection direction. The front end portion of the shift shaft 63 is inserted into a groove formed in the displacement direction of the shift rail 62, and a shift motor is connected to the front end portion, and the shift motor changes the position of the shift shaft 63 along the shift rail 62. For example, since the shift motor is positively rotated, the cryopump 31 is close to the exhaust side wall 53c together with the shift shaft 63, and since the shift motor is reversely rotated, the shift shaft 63 is away from the exhaust side wall 53c. The displacement portion is constituted by the bellows 61, the shift rail 62, the shift shaft 63, and the shift motor. The displacement portion is an example of a cooling member displacement portion.

In the vacuum chamber 53a, the film formation passage 50a and the recovery passage 50b extending in the connection direction are arranged in parallel in the displacement direction from the film formation side wall 53b side. That is, the recovery passage 50b is formed at a position farther from the film formation portion 20 than the film formation passage 50a in the displacement direction. In the film formation path 50a, the surface Sf faces the film formation portion 20, and the back surface Sb faces the surface 33f of the cooling member 33, and the square plate shape of the bracket T attached to the square frame is disposed. Substrate S. The substrate S is, for example, a glass substrate. The support plate may be attached to the back surface Sb of the substrate S in the carrier T. The support plate may be formed in a rectangular plate shape or in a lattice shape. Moreover, it is preferable that the support T is not provided in the bracket T based on the improvement of the cooling effect of the board|substrate S by the cooling mechanism 30.

[Electrical structure of sputtering device]

The electrical structure of the sputtering apparatus 50 will be described with reference to the fifth diagram. In addition, only the structure regarding the driving of the first sputtering chamber 53 in the electrical configuration of the sputtering apparatus 50 will be described below.

As shown in FIG. 5, a control device 50C is mounted on the sputtering apparatus 50, and the control device 50C controls the driving of the sputtering apparatus 50. A plurality of target power sources 23, a sputtering gas supply unit 24, a cryopump 31, two exhaust portions 56, and a shift motor 60M are connected to the control device 50C.

The control device 50C outputs a supply start signal for starting power supply from each target power source 23, and a supply stop signal for stopping supply of power from each target power source 23 to Target power supply 23. Each of the target power sources 23 supplies and stops power in response to a control signal from the control device 50C.

The control device 50C outputs a supply start signal for starting the supply of the sputtering gas from the sputtering gas supply unit 24, and a supply stop signal for stopping the supply of the sputtering gas from the sputtering gas supply unit 24 to the supply unit drive circuit 24D. The supply unit drive circuit 24D generates a drive signal for driving the sputtering gas supply unit 24 in response to a control signal from the control unit 50C, and outputs the generated drive signal to the sputtering gas supply unit 24.

The control device 50C outputs a drive start signal for starting the driving of the cryopump 31, and a drive stop signal for stopping the drive of the cryopump 31 to the pump drive circuit 31D. The pump drive circuit 31D generates a drive signal for driving the cryopump 31 corresponding to the control signal from the control device 50C, and outputs the generated drive signal to the cryopump 31.

The control device 50C outputs a drive start signal for starting the driving of each exhaust unit 56, and a drive stop signal for stopping the driving of each exhaust unit 56 to the exhaust unit drive circuit 56D. The exhaust unit drive circuit 56D generates a drive signal for driving each of the exhaust units 56 in response to a control signal from the control unit 50C, and outputs the generated drive signal to the exhaust unit 56.

The control device 50C outputs a positive rotation start signal for starting the rotation of the shift motor 60M, a reverse rotation start signal for starting the reverse rotation of the shift motor 60M, and a rotation stop signal for stopping the rotation of the shift motor 60M to Motor drive circuit 60D. The motor drive circuit 60D generates a drive signal for driving the shift motor 60M corresponding to the control signal from the control device 50C, and outputs the generated drive signal to the shift motor 60M.

[The role of the sputtering device]

The action of the sputtering apparatus 50 will be described with reference to the sixth and seventh figures.

As shown in FIG. 6, when a copper film is formed on the surface of the substrate S, first, the control device 50C outputs a driving signal to each of the exhaust portions 56, and each of the exhaust portions 56 exhausts the inside of the vacuum chamber 53a. Then, the control device 50C outputs a drive start signal to the cryopump 31, and the argon vapor pressure at which the temperature of the cooling member 33 becomes the temperature of the cooling member 33 is higher than the argon pressure in the vacuum chamber 53a, preferably 100 K or more. Temperature below 250K.

Further, in the cooling mechanism 30, since the temperature of the cryopump 31 is set to a specific temperature, the connection member 32 connected to the cryopump 31 is cooled and connected to the connection member 32. The cooling member 33 is cooled. Thereby, the temperature of the cooling member 33 is a temperature of 100K or more and 250K or less. Here, when the cooling mechanism 30 cools the cooling member 33 by the cryopump 31, the set temperature of the cryopump 31 is substantially equal to the temperature of the connecting member 32, and the temperature of the connecting member 32 is substantially equal to the temperature of the cooling member 33. Therefore, for example, in the configuration of measuring the temperature of the connecting member 32, the temperature of the measured connecting member 32 can be regarded as the temperature of the cooling member 33.

Then, the substrate S before the film formation is carried from the pretreatment chamber 52 to the first sputtering chamber 53 in the film formation path 50a, and the substrate S is stationary at the position where the entire surface Sf of the substrate S faces the film formation portion 20. Next, the control device 50C outputs a positive rotation start signal to the shift motor 60M, and starts the positive rotation of the shift motor 60M. Thereby, the shift shaft 63 is displaced toward the exhaust side wall 53c, and the bellows 61 is contracted. Then, when the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S becomes, for example, 250 mm or 50 mm, the control device 50C outputs a rotation stop signal to the shift motor 60M, and stops the rotation of the shift motor 60M. Therefore, the position of the cooling member 33 in the displacement direction is held at the first position where the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S is 250 mm or 50 mm. The first position is a position between the film formation passage 50a and the recovery passage 50b in the displacement direction.

Moreover, the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S may be a length other than 250 mm or 50 mm, or may be changed between the film formation processes for the substrate S. The smaller the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S, the substrate S is easily cooled by the cooling mechanism 30, and the larger the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S, the substrate S is not easily cooled. The mechanism 30 is cooled. Therefore, according to the displacement portion, even if the temperature of the cryopump 31 does not change, the extent to which the substrate S is cooled by the cooling mechanism 30 can be adjusted by changing the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S.

Further, in the first sputtering chamber 53, the formation of the copper film is not performed on the stationary substrate S, and may be performed on the substrate S to be conveyed in the film formation path 50a. In this case, the cooling of the substrate S by the cooling mechanism 30 may be performed on the substrate S that is transported.

Next, the control device 50C outputs a supply start signal to the sputtering gas supply unit 24 and a supply start signal to the target power source 23. Thereby, the sputtering gas supply unit 24 starts the supply of argon gas in the vacuum chamber 53a, and the target power source 23 starts supplying electric power to the backing plate 22. Thereby, in the vacuum chamber 53a, plasma is generated from argon gas, and the positive ion collision target in the plasma is passed. The sputtered particles ejected by 21 are deposited on the surface Sf of the substrate S. As a result, a copper film is formed on the surface of the substrate S.

At this time, since the back surface Sb of the substrate S faces the cooling member 33 cooled by the cryopump 31, it is difficult to increase the temperature of the substrate S compared to the configuration in which the cooling member 33 is not provided.

For example, in order to reduce the wiring resistance of the organic electroluminescence display or the liquid crystal display, the material for forming the wiring is copper, and the wiring thickness is 1 μm or more. In this case, the film stress of the copper film is increased in addition to the stress generated by the heat of the substrate S or the thermal expansion coefficient of the substrate S and the thermal expansion coefficient of the copper film. Therefore, there is a case where the substrate S is easily deformed and the substrate S is broken. Alternatively, since the substrate S is bent due to the deformation of the substrate S, there is a case where it is inconvenient to form the element in the subsequent processing. The temperature of the substrate S is increased and can be suppressed by intermittently forming a copper film. However, in such a film formation, on the premise that a copper film having the same thickness as that of the substrate S is formed, the time taken for the formation of the copper film becomes longer as compared with the case where the copper film is continuously formed.

In this regard, since the first sputtering chamber 53 is provided with the cooling mechanism 30 for cooling the substrate S, it is possible to suppress a situation in which the time required for the formation of the copper film becomes long, and it is possible to suppress deformation of the substrate S due to an increase in the temperature of the substrate S. situation.

When the copper film is formed, the surface Sf of the substrate S is exposed to the plasma generated between the target 21 and the surface Sf of the substrate S, so that the substrate is not exposed to the structure of the plasma as compared with the surface Sf of the substrate S, the substrate The temperature of S is easy to rise. Therefore, the cooling effect of the substrate S by the cooling mechanism 30 becomes more remarkable.

Further, for example, a high refractive index layer (yttria layer) is formed by sputtering on the organic light-emitting layer constituting the organic electroluminescent display. The organic light-emitting layer which is a lower layer of the ruthenium oxide layer is preferably kept at a specific temperature or lower, for example, 100 ° C or lower, in order to suppress the film quality change of the organic light-emitting layer. In this regard, since the substrate S is cooled by the cooling mechanism 30 and the yttrium oxide layer is formed, the temperature rise of the substrate S and the organic light-emitting layer formed on the substrate S is suppressed, and as a result, the film quality change of the organic light-emitting layer is suppressed.

When the film is formed in the first sputtering chamber 53, the pressure in the vacuum chamber 53a is usually maintained at 1 × 10 ^-1 Pa or less. When the sputtering gas supplied into the vacuum chamber 53a is only argon gas, the argon gas pressure at the time of film formation is substantially equal to the pressure in the vacuum chamber 53a. The temperature of the cooling member 33 is set to be 100 K or more and 250 K or less. Since the argon vapor pressure at the temperature of the cooling member 33 exceeds a pressure of 1 × 10 4 Pa, the argon vapor pressure at the temperature of the cooling member 33 is applied to the vacuum chamber 53a. The argon pressure inside will be sufficiently increased. Therefore, the argon gas supplied into the vacuum chamber 53a is hardly adsorbed by the cooling member 33.

On the other hand, in the cooling member 33, since the gas in the vacuum chamber 53a is adsorbed a lot, the efficiency of cooling by the cooling member 33 is easily changed as the driving time of the cryopump 31 passes. The efficiency of cooling by the cooling member 33 is changed by the sputtering condition in the vacuum chamber 53a. Therefore, the temperature of the cooling member 33 is preferably set to a temperature at which the cooling efficiency of the cooling member 33 is hard to change. In this regard, when the temperature of the cooling member 33 is set to 100 K or more and 250 K or less, the vapor pressure of the argon gas in the cooling member 33 becomes higher than the argon gas pressure in the vacuum chamber 53a. Therefore, since the cooling efficiency of the cooling member 33 is hard to change, the sputtering condition change condition is suppressed. Moreover, the degree of treatment for discharging the gas adsorbed by the cooling member 33 can be reduced to the extent that the argon adsorption state of the cooling member 33 is suppressed.

Further, in the case of 100 K or more and 250 K or less, the vapor pressure of water is a pressure in a pressure range of 1 × 10 ^-11 Pa or more and 1 × 10 ^-1 Pa or less, so that the vapor pressure of water at the temperature of the cooling member 33 is more than vacuum. The water pressure in the groove 53a is smaller. As described above, the temperature of the cooling member 33 is 100 K or more and 250 K or less, and water in the vacuum chamber 53a can be adsorbed, and argon gas can be suppressed from being exhausted.

As shown in the seventh figure, when the substrate S after the film formation is transported to the carry-in/out chamber 51 through the recovery passage 50b, the control device 50C outputs a drive start signal to each of the exhaust portions 56, and each of the exhaust portions 56 will be a vacuum chamber. Exhaust in 53a. Moreover, the control device 50C also outputs a drive start signal to the cryopump 31, and the temperature of the cooling member 33 is set as the above temperature. Further, since the temperature of the cooling member 33 is lowered from the room temperature to the specific temperature, it takes a certain period of time. Therefore, in the case where the sputtering apparatus 50 continuously performs the film formation process on the plurality of substrates S, all of the plurality of substrates S are formed. The drive of the cryopump 31 is maintained until the end of the process.

Then, the control device 50C outputs a reverse rotation start signal to the shift motor 60M, and the shift motor 60M starts reverse rotation. Thereby, the shift shaft 63 is displaced from the exhaust side wall 53c in the away direction, and by the extension of the bellows 61, the cooling member 33 is closer to the exhaust side wall 53c than the recovery passage 50b, and the control device 50C outputs the shift The rotation stop signal of the bit motor 60M stops the rotation of the shift motor 60M. Thereby, the cooling member 33 is disposed in the specific recovery passage 50b. It is closer to the exhaust side wall 53c. That is, the cooling member 33 is disposed in the shifting direction at a second position farther from the film forming portion 20 than the recovery passage 50b.

Thereafter, the formed substrate S is transferred from the second sputtering chamber 54 to the first sputtering chamber 53 by the recovery passage 50b. When the substrate S after the film formation is transported by the recovery passage 50b, the cooling member 33 is located closer to the exhaust side wall 53c than the recovery passage 50b, so that the conveyance of the substrate S is not hindered by the cooling member 33.

Further, in the sputtering apparatus 50, since the pretreatment chamber 52 is provided with the cooling mechanism 30, the substrate S carried into the pretreatment chamber 52 from the first sputtering chamber 53 is stationary in the pretreatment chamber 52, so that it can be in the pretreatment chamber 52. The substrate S after film formation is cooled. Therefore, for example, the structure in which the substrate S after the film formation is cooled to a specific temperature and the outside of the sputtering apparatus 50 is carried out, the pretreatment chamber 52 is provided with a cooling mechanism, and the time required for cooling the substrate S can be shortened. Therefore, the processing time of each substrate S of the sputtering apparatus 50 can be shortened.

[Cluster type sputtering device]

An example of a film forming apparatus (cluster type sputtering apparatus) will be described with reference to eighth to eleventh drawings.

As shown in FIG. 8, the sputtering apparatus 70 includes a transfer chamber 71 in which the transfer robot 71R is mounted, and in the transfer chamber 71, each of the carry-in chambers 72, the pretreatment chamber 73, the first sputtering chamber 74, and the second sputtering chamber 75 And the third sputtering chamber 76 is connected to be connectable to the transfer chamber 71.

In the carry-in/out chamber 72, the substrate S before film formation is carried from the outside of the sputtering apparatus 70 to the transfer chamber 71, and the formed substrate S is carried out from the transfer chamber 71 to the outside of the sputtering apparatus 70. The pretreatment chamber 73 includes a cooling mechanism 30 for performing a specific pretreatment such as a heat treatment or a washing treatment on the pre-film formation substrate S carried in from the transfer chamber 71.

In the first sputtering chamber 74, a film forming portion 20 including a target and a cooling mechanism 30 for cooling the substrate S are mounted. The first sputtering chamber 74 forms a specific film, such as a copper film, on the surface Sf of the substrate S. The second sputtering chamber 75 has the same structure as the first sputtering chamber 74, and only the target forming material provided in the film forming portion 20 is different from the first sputtering chamber 74. The second sputtering chamber 75 forms a specific film such as a metal film or a metal compound film or the like on the surface Sf of the substrate S on which the copper film is formed. The third sputtering chamber 76 has the same structure as the first sputtering chamber 74, and only the target forming material provided in the film forming portion 20 is different from the first sputtering chamber 74. The third sputtering chamber 76 is formed on the surface Sf of the substrate S on which the copper film is formed. A specific film such as a metal film or a metal compound film or the like. In each of the first sputtering chamber 74, the second sputtering chamber 75, and the third sputtering chamber 76, a film composed of materials different from each other may be formed, in the second sputtering chamber 75 and the third sputtering chamber. 76. A copper film may be formed in the same manner as the first sputtering chamber 74.

The sputtering apparatus 70 may not include the pretreatment chamber 73, and may have two or more pretreatment chambers. Further, the sputtering apparatus 70 may have only one or two sputtering chambers, or may have four or more sputtering chambers.

[Structure of the first sputtering chamber]

The structure of the first sputtering chamber 74 will be described in more detail with reference to the ninth diagram. Further, in each of the second sputtering chamber 75 and the third sputtering chamber 76, the target material forming material provided in the film forming portion 20 is different from the first sputtering chamber 74, but other configurations are the same.

As shown in the ninth figure, a gate valve 74g is attached to one side surface (transport side side wall 74b) of the vacuum chamber 74a of the first sputtering chamber 74. The gate valve 74g is opened when the substrate S before the film formation is transferred from the transfer chamber 71 to the first sputtering chamber 74, and when the substrate S is transferred from the first sputtering chamber 74 to the transfer chamber 71, and the first splash is connected. The plating chamber 74 and the transfer chamber 71.

The film-forming side wall 74c facing the gate valve 74g of the vacuum chamber 74a is fixed with a target plate 21 extending in a quadrangular plate shape in a vertical paper surface direction in a back plate 22 extending in a square plate shape in the same direction as the vertical paper surface. The target 21 is formed of, for example, a material mainly composed of copper. A target power source 23 is connected to the back plate 22. In the vacuum chamber 74a, a sputtering gas supply unit 24 that supplies a film forming gas (sputtering gas) into the vacuum chamber 74a is connected, and the sputtering gas supply unit 24 supplies, for example, argon gas.

In the vacuum chamber 74a, a substrate rotating shaft 11 extending in a columnar shape perpendicular to the paper surface direction is disposed, and both end portions of the substrate rotating shaft 11 are supported by the wall portion of the vacuum chamber 74a in a rotatable state. Hereinafter, the direction in which the central axis of the substrate rotating shaft 11 extends is set to the direction of the rotating axis. For example, a motor (substrate motor) for connecting the substrate rotation shaft is connected to the substrate rotating shaft 11, and the substrate rotating shaft 11 is rotated in both directions by the positive rotation and the reverse rotation of the motor.

A substrate stage 12 extending in a quadrangular plate shape in the rotation axis direction is attached to the substrate rotating shaft 11, and a plurality of pin holes 12a are formed in the substrate stage 12 along each side of the substrate substrate 12. The substrate stage 12 is displaced between a position substantially parallel to the target 21 and a position substantially perpendicular to the target 21 by the rotation of the substrate rotating shaft 11. The substrate stage 12 is disposed in a position substantially parallel to the target 21, and the surface Sf of the substrate S on the substrate stage 12 faces the target 21.

Further, a lifting plate 81 extending in a quadrangular plate shape in the rotation axis direction is disposed below the substrate rotating shaft 11 in the vacuum chamber 74a, and a plurality of lifting pins are mounted on a surface of the lifting plate 81 facing the substrate table 12. 82. A plurality of lift pins 82 are mounted along each side constituting the lift plate 81.

Further, when the substrate S is carried into the first sputtering chamber 74 from the transfer chamber 71, the lift plate 81 rises toward the substrate stage 12, and the lift pins 82 pass through the different pin holes 12a. Thereby, the end of each lift pin 82 protrudes from the pin hole 12a. Then, the substrate S is carried by the transport robot 71R to the lift pins 82. In this state, since the lift plate 81 is lowered toward the substrate stage 12, the substrate S is placed on the substrate stage 12.

The cryopump 31 is attached to the outer surface of the wall portion (upper wall 74d) facing the lift plate 81 of the vacuum chamber 74a, and the cooling surface of the cryopump 31 is exposed in the vacuum chamber 74a. The connection member 32 is connected to the cooling surface of the cryopump 31 in the same manner as the cryopump 31 of the sputtering apparatus 50, and is extended in the direction of the rotation axis at the end portion of the connection member 32 where the cryopump 31 is not connected. A quadrangular plate-shaped cooling member 33. A cooling rotary shaft 34 that extends in a columnar shape in the direction of the rotation axis is attached to a side surface of the cooling member 33 that faces the target member 21. The cooling rotary shaft 34 has a central axis extending direction parallel to the extending direction of the substrate rotating shaft 11, and both end portions of the cooling rotary shaft 34 are cooled and supported by the vacuum chamber 74a in a rotatable state. Similarly to the substrate rotating shaft 11, the cooling rotary shaft 34 is connected to a motor (cooling motor) for cooling the rotating shaft, and the cooling rotary shaft 34 is rotated in both directions by the positive rotation and the reverse rotation of the motor. The cooling member 33 is disposed substantially parallel to the state of the target 21 and substantially perpendicular to the direction of the target 21 by the rotation of the cooling rotary shaft 34.

The material for forming the connecting member 32 is the same as the connecting member of the sputtering device 50, and is suitable for transmitting the heat of the cooling member 33 to the material of the cryopump 31, for example, a metal such as copper. Further, the connecting member 32 is bent between the upper wall 74d and the cooling member 33 in a direction perpendicular to the direction of the rotation axis to be stretched and contracted a plurality of times. The connecting member 32 is in the most contracted state when the cooling member 33 is substantially perpendicular to the target 21, that is, the distance between the upper wall 74d and the cooling member 33 is the minimum state. On the other hand, the connecting member 32 is in the most extended state when the cooling member 33 is substantially parallel to the target 21, that is, when the distance between the upper wall 74d and the cooling member 33 is the maximum state. Further, in the first sputtering chamber 74, an exhaust portion that exhausts the inside of the vacuum chamber 74a is attached, and the exhaust portion includes, for example, a turbo molecular pump.

[Electrical structure of sputtering device]

The electrical structure of the sputtering apparatus 70 will be described with reference to the tenth diagram. Further, in the following electrical configuration of the sputtering apparatus 70, only the driving structure regarding the first sputtering chamber 74 will be described.

As shown in the tenth diagram, in the sputtering apparatus 70, a control device 70C that controls the driving of the sputtering apparatus 70 is mounted. A target power source 23, a sputtering gas supply unit 24, a cryopump 31, a substrate motor 11M, and a cooling motor 34M are connected to the control device 70C.

Similarly to the above-described control device 50C, the control device 70C outputs a supply start signal for starting the supply of electric power from the target power source 23, and a supply stop signal for stopping the supply of electric power from the target power source 23 to the target power source 23. The target power source 23 supplies and stops power in response to a control signal from the control device 70C.

Similarly to the above-described control device 50C, the control device 70C starts the supply start signal for starting the supply of the sputtering gas from the sputtering gas supply unit 24, and the supply stop signal output for stopping the supply of the sputtering gas from the sputtering gas supply unit 24. To the supply unit drive circuit 24D. The supply unit drive circuit 24D generates a drive signal for driving the sputtering gas supply unit 24 in response to a control signal from the control unit 70C, and outputs the generated drive signal to the sputtering gas supply unit 24.

Similarly to the above-described control device 50C, the control device 70C outputs a drive start signal for starting the drive of the cryopump 31 and a drive stop signal for stopping the drive of the cryopump 31 to the pump drive circuit 31D. The pump drive circuit 31D generates a drive signal for driving the cryopump 31 corresponding to the control signal from the control device 70C, and outputs the generated drive signal to the cryopump 31.

The control device 70C uses a positive rotation start signal for starting the positive rotation of the substrate motor 11M, a reverse rotation start signal for starting the reverse rotation of the substrate motor 11M, and a rotation stop signal output for stopping the rotation of the substrate motor 11M to the substrate motor drive circuit. 11D. The substrate motor drive circuit 11D generates a drive signal for driving the substrate motor 11M in response to a control signal from the control device 70C, and outputs the generated drive signal to the substrate motor 11M.

The control device 70C outputs a positive rotation start signal for starting the cooling motor 34M to rotate, a reverse rotation start signal for starting the reverse rotation of the cooling motor 34M, and a rotation stop signal for stopping the rotation of the cooling motor 34M to the cooling motor drive. Circuit 34D. The cooling motor drive circuit 34D corresponds to the control signal from the control device 70C, generates a drive signal for driving the cooling motor 34M, and outputs the generated drive signal to the cooling motor 34M.

[The role of the sputtering device]

The action of the sputtering apparatus 70 will be described with reference to Fig. 11.

As shown in the eleventh diagram, when a copper film is formed on the surface of the substrate S, first, the control device 70C outputs a positive rotation start signal to the substrate motor 11M, and the substrate motor 11M starts normal rotation. Thereby, the substrate rotating shaft 11 rotates in the right rotation direction of the paper surface, for example, and the substrate stage 12 is disposed at a position where the surface Sf of the substrate S is substantially parallel to the target 21 . Next, the control device 70C outputs a rotation stop signal to the substrate motor 11M, and the substrate motor 11M stops rotating. Thereby, the substrate stage 12 remains substantially parallel to the target 21. Then, like the sputtering apparatus 50, the exhaust portion exhausts the inside of the vacuum chamber 74a, and by driving the cryopump 31, the temperature of the cooling member 33 is preferably a temperature of 100 K or more and 250 K or less.

Next, the control device 70C outputs a positive rotation start signal to the cooling motor 34M, and the cooling motor 34M starts the positive rotation. Thereby, the cooling rotary shaft 34 rotates in the left rotation direction of the paper surface, for example, and the cooling member 33 is substantially parallel to the substrate S, and is disposed at a position facing the back surface Sb of the substrate S. At this time, as the cooling member 33 moves, the connecting member 32 extends toward the target 21 side of the cryopump 31. Then, the control device 70C outputs a rotation stop signal to the cooling motor 34M, and the cooling motor 34M stops rotating. Thereby, the cooling member 33 is kept substantially parallel to the substrate S.

Next, like the sputtering apparatus 50, the sputtering gas supply unit 24 starts supplying argon gas into the vacuum chamber 74a, and the target power source 23 starts supplying electric power to the backing plate 22. Thereby, in the vacuum chamber 74a, plasma is generated from the argon gas, and the sputtering particles ejected from the positive ion collision target 21 in the plasma are deposited on the surface Sf of the substrate S. As a result, a copper film is formed on the surface of the substrate S.

At this time, since the back surface Sb of the substrate S faces the cooling member 33 cooled by the cryopump 31, the temperature of the substrate S is hard to be improved as compared with the configuration without the cooling member 33 as in the sputtering apparatus 50. As a result, the substrate The deformation of S is suppressed. Further, since the temperature of the cooling member 33 is set to 100 K or more and 250 K or less, the exhaust efficiency of the cryopump 31 is hard to change, and as a result, the change in sputtering conditions in the vacuum chamber 74a is suppressed.

When the formed substrate S is carried out from the first sputtering chamber 74, like the sputtering device 50, the driving of the exhaust portion and the driving of the cryopump 31 are maintained. Then, the control device 70C outputs a reverse rotation start signal to the cooling motor 34M, and the cooling motor 34M starts reverse rotation. With this, The cooling rotary shaft 34 rotates in the right rotation direction of the paper surface, for example, and the cooling member 33 is formed substantially perpendicular to the substrate S. At this time, as the cooling member 33 moves, the connecting member 32 contracts on the side of the cryopump 31 of the cooling member 33. Then, the control device 70C outputs a rotation stop signal to the cooling motor 34M, and the cooling motor 34M stops rotating. Thereby, the cooling member 33 is disposed at a position substantially perpendicular to the substrate stage 12.

Thereafter, the control device 70C outputs a reverse rotation start signal to the substrate motor 11M, and the substrate motor 11M starts reverse rotation. Thereby, the substrate rotating shaft 11 rotates in the left rotation direction of the paper surface, for example, and the substrate stage 12 is substantially perpendicular to the target 21. Then, the control device 70C outputs a rotation stop signal to the substrate motor 11M, and the substrate motor 11M stops rotating. Thereby, the substrate stage 12 is held at a position substantially perpendicular to the target 21. As described above, when the substrate stage 12 is displaced, the cooling member 33 is disposed at a position substantially perpendicular to the substrate S, so that the displacement of the substrate stage 12 is not hindered by the cooling member 33.

The embodiment and the comparative example will be described with reference to the twelfth diagram. Further, in the twelfth diagram, the embodiment is indicated by a solid line, and the comparative example is indicated by a two-dot chain line.

The glass substrate was formed by the sputtering apparatus 50 shown in the third figure, and the temperature of the glass substrate from the time when the power was supplied from the target power source 23 to the target 21 was measured to 500 seconds. The distance between the surface of the cooling member 33 and the back surface of the glass substrate was 50 mm between the targets being sputtered. In the embodiment, the glass substrate was cooled by the cooling member 33, and the glass substrate was not cooled by the cooling member 33 in the comparative example.

As shown in Fig. 12, the minimum substrate temperature in the examples was 16.5 ° C, the maximum value was 79 ° C, and the minimum value of the substrate temperature in the comparative example was 22.5 ° C, and the maximum value was 97.5 ° C. Then, the maximum value of the temperature difference ΔT between the substrate temperature of the Example at the same time and the substrate temperature of the comparative example was 19.5 °C. As described above, according to the cooling mechanism 30 mounted on the sputtering apparatus 50, the temperature rise of the glass substrate is suppressed.

Further, even in the cluster-type sputtering apparatus 70 shown in FIG. 8, the temperature rise of the glass substrate is suppressed similarly to the sputtering apparatus 50.

As described above, according to the above embodiment of the film forming apparatus, the effects listed below can be obtained.

(1) Cooling member 33 and substrate S cooled by adiabatic expansion of gas Faced with each other, the temperature increase condition of the substrate S is suppressed. At this time, since the substrate S and the cooling member 33 are not in contact with each other, when the substrate S is cooled, a situation in which cracks or notches are generated due to contact between the substrate S and the cooling member 33 is also suppressed.

(2) The temperature of the cooling member 33 is set to a value higher than the pressure in the vacuum chambers 53a and 74a by the gas vapor pressure at the temperature of the cooling member 33. Therefore, it is difficult for the gas in the vacuum chambers 53a and 74a to be adsorbed to the cooling member 33. As a result, since the adsorption of the gas in the vacuum chambers 53a and 74a to the cooling member 33 is suppressed, not only the state of the gas in the vacuum chambers 53a and 74a but also the degree of cooling by the cooling member 33 is hard to change.

(3) Since the temperature of the cooling member 33 is set to 100 K or more and 250 K or less, argon gas adsorption to the cooling member 33 is more reliably suppressed.

(4) Since the surface of the cooling member 33 is black, the surface of the cooling member 33 is a color having a lower emissivity than black, for example, such as white, and heat reflection from the cooling member 33 toward the substrate S is suppressed. Therefore, the temperature of the substrate S becomes higher, and the situation is further suppressed.

(5) The range of cooling can be expanded on the substrate S as compared with the structure in which the cooling member 33 is fixed to the substrate S.

(6) The extent to which the substrate S is cooled by the cooling member 33 can be adjusted by changing the distance between the cooling member 33 and the substrate S.

(7) Even if the substrate S is exposed to the plasma, the temperature rise of the substrate S is suppressed.

(8) Further, the vacuum chambers 53a and 74a that house the film forming unit 20 and the cooling member 33 are disposed at positions where the film forming unit 20 and the cooling member 33 face each other, and the arrangement portion is formed between the film forming unit 20 and the cooling member 33. The substrate S is disposed between. Therefore, when the film forming portion 20 forms a film on the substrate S, the temperature rise of the substrate S is suppressed.

(9) Since the cooling member 33 is also accommodated in the pretreatment chambers 52 and 73, the temperature of the substrate S can be lowered before the film formation portion 20 forms a film on the substrate S or after the film formation portion forms a film.

Further, the above embodiment may be implemented as appropriate by the following modifications.

‧ The cooling mechanism 30 does not extend the deposition process of the substrate S, and may be a cooling structure of the substrate S at least a part of the deposition process. Even this class The structure can suppress the temperature rise of the substrate S by cooling the substrate S.

The temperature of the cooling member 33 may be set such that the vapor pressure at the temperature of the cooling member 33 is equal to or lower than the argon pressure in the vacuum chambers 53a and 74a. Even in such a configuration, since the cooling of the substrate S by the cooling mechanism 30 can suppress the temperature rise of the substrate S.

‧ The temperature of the cooling member 33 may be set to a temperature lower than 100K, or may be set to a temperature higher than 250K. Further, although the temperature of the cooling member 33 is preferably set to an ambient temperature at which the sputtering apparatuses 50 and 70 are disposed, that is, a temperature lower than room temperature, the film forming process is generally used to increase the temperature of the substrate S. higher. Therefore, if the temperature of the cooling member 33 is set to be lower than the temperature of the substrate S when the temperature is raised by at least the film forming process, the substrate S is cooled by the cooling mechanism 30.

‧ Sputtering gas is not limited to argon, but may be helium, helium, neon or xenon of inert gas.

‧ In the film forming process, in addition to the sputtering gas, a metal compound film may be formed using a reaction gas such as oxygen or nitrogen.

‧ When the film corresponding to one surface of the substrate S of each of the sputtering chambers 53, 54, 74, and 75 is formed, the film formation material FM may be discharged a plurality of times during a specific rest period. In such a configuration, the cooling mechanism 30 may perform cooling of the substrate S from the formation of the film in each of the sputtering chambers 53, 54, 74, and 75, or may be performed when the formation material FM is discharged. The substrate S is cooled, and the structure of the substrate S is not cooled during the rest period.

‧ The surface of the cooling member 33 may not be black. That is, the surface of the cooling member 33 may have an emissivity that is smaller than 0.8.

The cooling member 33 may be black at least a part of the surface on which the substrate S faces. According to such a configuration, since a part of the surface is black, the substrate S is easily cooled as compared with a structure in which all of the surfaces are smaller in color than the black radiance.

‧ Although the cooling member 33 is configured to include the cooling layer 41, the buffer layer 42, and the black layer 43, the buffer layer 42 may be omitted, and both the buffer layer 42 and the black layer 43 may be omitted. Further, the cooling member 33 may have a structure including only the black layer 43.

The first sputtering chambers 53 and 74 may not include a displacement portion including a bellows 61, a shift rail 62, a shift shaft 63, and a shift motor 60M. In other words, for The surface position of the cooling member 33 of the back surface Sb of the substrate can also be fixed.

The distance between the surface of the cooling member 33 and the back surface Sb of the substrate S may also be changed during the film forming process for the substrate S. In this case, the memory unit included in the control device 50C stores a recipe for the film formation process, and the manner in which the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S is changed in advance may be determined in the recipe. For example, the cooling member 33 may be only a certain distance close to the substrate S at a specific time after starting the film forming process for the substrate S. Since the temperature of the substrate S is higher as the elapsed time from the film formation process is longer, the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S is gradually reduced, so that the temperature of the substrate S is easily kept constant.

Alternatively, the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S may be increased from the film forming process and may become larger each time a certain time elapses. Further, the distance between the surface of the cooling member 33 and the back surface Sb of the substrate S may be alternately reduced and increased. The distance between the surface of the film forming process cooling member 33 and the back surface Sb of the substrate S may be changed by the thickness of the material or film of the film formed on the substrate S.

‧ The shifting portion is not limited to the configuration including the bellows 61, the shift rail 62, the shift shaft 63, and the shift motor 60M, and the vacuum environment in the vacuum chambers 53a and 74a may be maintained, and the back surface Sb and the cooling of the substrate S may be changed. The mechanism 30, in particular, may have a structure that changes the distance between the surfaces of the cooling members 33.

In the sputtering apparatus 50, the displacement portion is configured to change only the distance between the back surface Sb of the substrate S and the surface of the cooling member 33. Not limited to this, the shifting portion may be configured to change a portion of the back surface Sb of the stationary substrate S facing the surface of the cooling member 33. At this time, it is preferable that the distance between the back surface Sb of the substrate S and the surface of the cooling member 33 is the same before and after the movement of the cooling member 33. In other words, the displacement portion may have a configuration in which the distance between the back surface Sb of the substrate S and the surface of the cooling member 33 is maintained, and the back surface Sb of the substrate S is scanned on the surface of the cooling member 33. At this time, for example, the cooling member 33 is scanned in the connection direction or the standing direction, or in a direction intersecting any of these directions. In other words, the displacement portion moves the cooling member 33 in parallel along the back surface Sb of the substrate S. Alternatively, the displacement portion may have a configuration in which the cooling member 33 is moved in parallel along the back surface Sb of the substrate S, and the distance between the back surface Sb of the substrate S and the surface of the cooling member 33 is changed. According to such a structure, it is colder than the back surface Sb of the substrate S However, the structure in which the surface of the member 33 faces does not change, and the entire substrate S becomes easy to be cooled.

Further, when the heat applied to the substrate S is substantially the same in the plane of the substrate S, even if the displacement portion changes the position of the cooling member 33 for the substrate S, the distance between the back surface Sb of the substrate S and the surface of the cooling member 33 is the same. The deviation of the degree of cooling in the in-plane of the substrate S is suppressed. As a result, in the plane of the substrate S, the deviation of the degree of cooling is suppressed.

On the other hand, when the heat applied to the substrate S is deviated in the plane of the substrate S, the portion of the displacement portion at the substrate S to which the high heat is applied is preferably the distance between the back surface Sb of the substrate S and the surface of the cooling member 33. Become smaller. According to such a configuration, the degree of cooling by the cooling member 33 in the portion of the substrate S that needs to be further cooled becomes large. Therefore, the temperature variation in the plane of the substrate S is suppressed as compared with the structure in which the distance between the back surface Sb of the substrate S and the surface of the cooling member 33 is kept constant.

Further, even in the sputtering apparatus 70, the displacement portion may be configured to change the distance between the back surface Sb of the substrate S and the surface of the cooling member 33, and the displacement portion may scan the substrate on the surface of the cooling member 33. The structure of the back Sb of S.

In addition, even if the cooling mechanism 30 is configured to cool the substrate S to be conveyed, the displacement portion changes the position of the cooling member 33 in the standing direction or the position of the cooling member 33 in the connection direction, so that the entire substrate S becomes easy. It is cooled. Further, the shifting portion may be configured to change the position of the cooling member 33 in the same direction as the substrate S transport direction when the substrate S is transported, or the cooling member 33 may be changed in a direction opposite to the substrate S transport direction. The structure of the location. Even in such a configuration, the displacement portion can change the position of the cooling member 33 in the transport direction while maintaining the distance between the back surface Sb of the substrate S and the surface of the cooling member 33, and the back surface Sb of the substrate S can be changed. The distance from the surface of the cooling member 33, and the position of the cooling member 33 is changed in the conveying direction.

‧ In the sputtering apparatus 50, the substrate S is not changed to the position of the cooling mechanism 30 by the shifting portion after being carried into the first sputtering chamber 53, and the substrate S may be carried in after the position of the cooling mechanism 30 is changed by the shifting portion. The first sputtering chamber 53.

The sputtering apparatus 50 transports the substrate S from the loading/unloading chamber 51 to the second sputtering chamber 54 along the film formation path 50a, and proceeds from the second sputtering chamber 54 to the loading and unloading chamber 51 along the recovery passage. 50b transports the substrate S. At this time, the sputtering apparatus 50 discharges the film forming material FM toward the substrate S disposed on the film formation path 50a.

Not limited to this, the sputtering apparatus 50 may perform the conveyance of the substrate S and the deposition of the material FM toward the substrate S as follows. In other words, when the sputtering apparatus 50 is carried into the substrate S, the substrate S is placed in the recovery passage 50b of the carry-in/out chamber 51, and the substrate S is transported from the carry-in/out chamber 51 to the second sputtering chamber 54 along the recovery passage 50b. At this time, the sputtering apparatus 50 may cool the substrate S passing through the pretreatment chamber 52, the first sputtering chamber 53, and the second sputtering chamber 54 by the cooling member 33 disposed at the second position, or may not be cooled.

Then, the sputtering apparatus 50 is transported from the recovery passage 50b to the film formation passage 50a by the passage changing portion in the second sputtering chamber 54. The sputtering apparatus 50 conveys the substrate S from the second sputtering chamber 54 to the carry-in/out chamber 51 along the film formation path 50a. At this time, the sputtering apparatus 50 discharges the film forming material FM toward the substrate S disposed on the film formation path 50a in the first sputtering chamber 53 and the second sputtering chamber 54. Further, the cooling mechanism cools the substrate S on which the film forming material FM is discharged by the cooling member 33 disposed at the first position.

Further, when the substrate S disposed in the recovery passage 50b is cooled by the sputtering apparatus 50, the distance between the cooling member 33 located at the second position and the substrate S is the same as that when the substrate S is disposed in the film formation path 50a, for example, Good for 50mm or 250mm.

Even with such a configuration, since the cooling mechanism 30 cools the substrate S from which the film forming material FM is discharged, the effect according to the above (1) can be obtained.

‧ The sputtering apparatus 50 discharges the film forming material FM toward the substrate S disposed on the film formation path 50a. Not limited to this, the sputtering apparatus 50 may discharge the film forming material FM toward the substrate S disposed on the recovery passage 50b.

‧ film forming devices, such as sputtering devices 50, 70, are not devices in which the surface of the substrate S is exposed to the plasma when the forming material is supplied to the substrate S, or may be a device that does not generate plasma, for example, as steaming The plating device is embodied.

For example, in an organic electroluminescence display, an organic light-emitting layer constituting a pixel is formed by a vapor deposition device. In this case, the organic light-emitting material is evaporated by heating by the vapor deposition source provided in the vapor deposition device, and the organic light-emitting layer is deposited on the surface of the substrate S because the evaporated organic light-emitting material is deposited on the surface of the substrate S. Since the organic luminescent material that is heated on the substrate S is stacked, the substrate S The temperature also rises to the evaporation temperature of the organic light-emitting material. As a result, when the organic light-emitting material formed on the substrate S evaporates again, the characteristics of the organic light-emitting material deteriorate.

In this regard, since the substrate S is cooled by the cooling mechanism 30 and the organic light-emitting layer is formed, it is possible to suppress the re-evaporation or deterioration of the organic light-emitting layer.

‧In the film forming apparatus, various films are also formed with respect to the substrate S on which the cover is attached. In this case, the film forming apparatus is provided with a pretreatment chamber for mounting a cover on the substrate S. The material for forming the cover is made of a metal, an alloy having a low thermal expansion coefficient such as invar or the like, a resin material, and a ceramic. The cover is, for example, a plurality of openings having wiring patterns corresponding to the substrate S.

Since the substrate S is cooled when the forming materials of the various films are discharged, the cover is also cooled, so the temperature of the cover is room temperature, for example, from 300 K to a temperature lower than room temperature. At this time, when the cover temperature is largely lowered, there is a case where the position of the cover for the substrate S is changed for thermal deformation of the cover. Therefore, the temperature of the cooling member 33 when the material FM is discharged is preferably set to 273 K or more and 300 K or less by suppressing the thermal deformation of the cover and changing the temperature of the substrate S to 100 ° C or less in which the shape of the substrate S does not change. temperature.

Moreover, when the substrate S is cooled, the carrier T supporting the substrate S or the member for mounting the substrate S on the carrier T, etc., and the member in contact with the substrate S are also cooled. Thereby, the member that is in contact with the substrate S may also be thermally deformed like the above-described cover. Under such conditions, a force that deforms the substrate S is applied to the substrate S due to thermal deformation of the member that is in contact with the substrate S. Therefore, the temperature of the cooling member 33 is preferably set to a temperature of 273 K or more and 300 K or less by suppressing thermal deformation of the substrate S and changing the temperature of the substrate S to 100 ° C or less in which the shape of the substrate S does not change.

Further, in a state where the film forming material is not discharged, when the film S after the film formation is cooled by the cooling member 33, the film stress is increased to such a degree that the film is peeled off from the substrate S. Therefore, based on the state in which the suppression film is peeled off from the substrate S, the temperature of the cooling member 33 is preferably set to a temperature of 273 K or more and 300 K or less.

‧ The cooling mechanism 30 of the film forming apparatus may include a cooling gas supply unit that supplies a gas (cooling gas) to the back surface Sb of the substrate S. The cooling mechanism 30 including the cooling gas supply unit will be described with reference to the thirteenth and fourteenth drawings.

As shown in the thirteenth diagram, the cooling mechanism 30 is in addition to the cryopump 31 and the connecting member 32. In addition to the cooling member 33, the cooling gas supply unit 35 is further provided. The cooling gas supply unit 35 is connected to the cooling gas pipe 35a, and the cooling gas pipe 35a is connected to the cooling gas supply hole 33h formed on the surface of the cooling member 33 by passing through the inside of the connecting member 32. The cooling gas supply hole 33h discharges the cooling gas G from the cooling gas supply unit 35 between the surface of the cooling member 33 and the back surface Sb of the substrate S. Since the cooling gas G is supplied to the back surface Sb of the substrate S, heat exchange is performed between the substrate S and the cooling gas G. Therefore, the temperature of the substrate S is less likely to be higher than the configuration in which the cooling gas G is not supplied.

The vapor pressure of the cooling gas G is preferably at a vapor pressure of the film forming gas, and in the case where the film forming gas is argon gas, the cooling gas is preferably helium gas or argon gas. Thereby, the cooling gas G is hard to be adsorbed by the cryopump 31.

As shown in Fig. 14, the film forming apparatus is embodied as the sputtering apparatus 50, and the cooling gas supply unit 35 is connected to the control unit 50C in a state where the cooling mechanism 30 is provided with the cooling gas supply unit 35. The control device 50C outputs a supply start signal for starting the supply of the cooling gas to the cooling gas supply unit 35, and a supply stop signal for stopping the supply of the cooling gas to the cooling gas supply unit drive circuit 35D. The cooling gas supply unit drive circuit 35D generates a drive signal for driving the cooling gas supply unit 35 in response to a control signal from the control unit 50C, and outputs the generated drive signal to the cooling gas supply unit 35. Moreover, the control device 50C adjusts the flow rate of the gas supplied from the cooling gas supply unit 35.

Here, the type of the cooling gas is the same as the temperature. The larger the flow rate of the cooling gas supplied to the back surface Sb of the substrate S, the more easily the substrate S is cooled, and the smaller the flow rate of the cooling gas, the more difficult the substrate S is to be cooled. Therefore, the control device 50C can adjust the temperature of the substrate S by adjusting the flow rate of the cooling gas.

‧ The cooling gas pipe 35a of the cooling gas supply unit 35 may be directly connected to the vacuum chamber, and the cooling gas may be supplied to the arrangement substrate S side of the cooling member 33 in the vacuum chamber without passing through the connection member 32 and the cooling member 33. .

The cooling mechanism 30 may include two or more cryopumps 31, a connecting member 32, and a cooling member 33. According to such a configuration, since the surfaces of the plurality of cooling members 33 face the back surface Sb of the substrate S, and the cooling efficiency of the cooling members 33 is the same, the number of the cooling members 33 is more, and the temperature of the substrate S is hard to become higher. Also, even for any low temperature The pump 31 is maintained, and the other cryopump 31 can be used to cool the substrate S and form a film on the surface of the substrate S.

In the cooling mechanism 30, the connecting member 32 has a plurality of end portions, and the cooling members 33 may be connected to the respective end portions of the connecting member 32 one by one. That is, the cooling mechanism 30 may include a plurality of cooling members 33. In this configuration, the plurality of cooling members 33 are preferably arranged to face a portion different from the back surface Sb of the substrate S. According to such a configuration, when the film forming material FM is discharged to the surface of the substrate S at the film forming portion 20, the back surface Sb of the substrate S is cooled at a plurality of places. Therefore, the degree of variation in the degree of cooling in the in-plane of the substrate S is suppressed as compared with the structure cooled at one portion of the back surface Sb of the substrate S. As a result, the in-plane temperature deviation of the substrate S is suppressed.

The first sputtering chambers 53 and 74 may be provided with a gate valve, and the cryopump 31 and the vacuum chambers 53a and 74a may be in a non-connected state and a communicating state. According to this configuration, the vacuum environment in the vacuum chambers 53a, 74a can be maintained, and the maintenance for discharging the liquid by the cryopump 31 can be performed.

In the first sputtering chamber 53, the cryopump 31 is mounted between the two exhaust portions 56 arranged in the connection direction on the exhaust side wall 53c, but the cryopump 31 may be mounted on the exhaust side wall 53c. Stand between the two exhaust parts juxtaposed in the direction of setting. Further, in the first sputtering chamber 53, only one exhaust portion 56 may be provided, and one exhaust portion 56 and one cryopump 31 may be mounted side by side in the connection direction on the exhaust side wall 53c, and one exhaust gas may be provided. The portion 56 and one cryopump 31 may be mounted side by side in the standing installation direction on the exhaust side wall 53c. Further, the exhaust portion 56 may be mounted on the film forming side wall 53b and the exhaust side wall 53c, and the cryopump 31 may be mounted on the exhaust side wall 53c, or the exhaust portion 56 may be mounted only on the film forming side. The side wall 53b has a structure in which the cryopump 31 is mounted on the exhaust side wall 53c.

The cooling mechanism 30 mounted on the sputtering apparatus 50 and the cluster type sputtering apparatus 70 is not limited to the cooling mechanism 30 including the cryopump 31, and the cooling mechanism 30 that cools the cooling member 33 by the liquid refrigerant may be used. Further, a cooling mechanism using a refrigerant may be mounted on the vapor deposition device. Even in such a structure, since the substrate S is cooled, the temperature rise of the substrate S is suppressed. Further, if the sputtering apparatuses 50 and 70 are film forming apparatuses including a plurality of processing chambers, the cooling mechanisms 30 mounted in the plurality of processing chambers may be different from each other. For example, a cooling mechanism 30 including the cryopump 31 may be mounted in a processing chamber having a relatively large amount of heat applied to the substrate S, and a liquid state may be mounted in a processing chamber having a relatively small amount of heat applied to the substrate. The structure of the cooling mechanism 30 of the refrigerant.

Moreover, even in such a cooling mechanism 30, the temperature of the cooling member 33 is preferably set to a temperature at which the vapor pressure of the temperature of the cooling member 33 is higher than the gas pressure contained in the vacuum chamber. According to such a configuration, the condition in which the liquid generated from the gas contained in the vacuum chamber adheres to the surface of the cooling member 33 is suppressed.

‧ The transport direction of the substrate S may not be perpendicular to the direction in which the cooling member 33 is displaced, and may be a direction intersecting the shifting direction. Further, the transport direction of the substrate S may not coincide with the above-described connection direction, or may be a direction intersecting with the connection direction.

The film formed by each of the sputtering chambers 53, 54, 74, 75, and 76 is not limited to a metal film or a metal compound film, and may be, for example, a semiconductor film or a semiconductor compound film. In short, the film formed by each of the sputtering chambers 53, 54, 74, 75, and 76 may be a film which can be formed by sputtering.

10‧‧‧Configuration Department

20‧‧‧ Film Formation

30‧‧‧Cooling mechanism

31‧‧‧Cryogenic pump

32‧‧‧Connecting parts

33‧‧‧cooling parts

S‧‧‧Substrate

Sb‧‧‧Back

Sf‧‧‧ surface

FM‧‧‧ forming materials

Claims (14)

A film forming apparatus comprising: a film forming portion that discharges particles including a film forming material onto a substrate; a cooling member that cools the substrate; a cooling portion that cools the cooling member; and an arrangement portion that arranges the substrate to be The cooling member separates and faces the cooling member; and the connecting member connects the cooling portion and the cooling member; wherein the substrate and the cooling member do not contact each other; and the cooling portion thermally sets the temperature of the cooling member by adiabatic expansion of the gas The cooling member is not more than 273K above 100K; the cooling member is formed by a multi-layer structure in which a cooling layer connected to the connecting member, a buffer layer, and a layer facing the surface of the substrate constituting the surface of the cooling member are laminated, and the buffer layer is thermally expanded. The coefficient is between the thermal expansion coefficient of the cooling layer and the thermal expansion coefficient of the layer constituting the surface of the cooling member, and the radiance of the layer constituting the surface of the cooling member is higher than that of the cooling layer and the buffer layer. The film forming apparatus according to the first aspect of the invention, further comprising: a vacuum chamber for accommodating the cooling member; wherein the cooling portion is a vapor pressure of a temperature of the cooling member of a gas contained in the vacuum chamber, and the vacuum chamber is higher than the vacuum chamber The aforementioned cooling member is cooled at a higher pressure inside. The film forming apparatus according to claim 2, wherein the gas contains argon gas; and the cooling unit sets a temperature of the cooling member to be 100 K or more and 250 K or less. The film forming apparatus according to claim 1, wherein the aforementioned surface of the cooling member comprises a black portion. The film forming apparatus according to claim 1, wherein the cooling member is one of a plurality of cooling members cooled by the cooling unit; and the plurality of cooling members are disposed to face the substrate disposed in the arrangement portion Different parts. The film forming apparatus according to claim 1, further comprising: a shifting portion, changing the front The position of the aforementioned cooling device of the substrate. The film forming apparatus according to claim 6, wherein the shifting portion changes a distance between the substrate and the cooling member. The film forming apparatus according to claim 6, wherein the shifting portion moves the cooling member to a different plurality of positions; before and after the position of the cooling member is changed, between the substrate and the cooling member The distance is the same. The film forming apparatus according to claim 1, wherein the film forming portion discharges the film forming material onto the substrate, and the substrate is exposed to the plasma. The film forming apparatus according to claim 1, wherein the film forming portion discharges the forming material onto the substrate by evaporating the film forming material. The film forming apparatus according to the first aspect of the invention, further comprising: a gas supply unit that supplies gas to the substrate side on the cooling member. The film forming apparatus according to the first aspect of the invention, further comprising: a vacuum chamber that accommodates the film forming portion and the cooling member; wherein the film forming portion and the cooling member are disposed at positions facing each other; The portion is disposed between the film forming portion and the cooling member. The film forming apparatus according to the first aspect of the invention, wherein the arrangement portion is one of two arrangement portions of the substrate; the film formation device further includes: a cooling member displacement portion that changes the aforementioned direction along the displacement direction a position of the cooling member; the film forming portion and the two arrangement portions are arranged in this order along the displacement direction; and among the two arrangement portions, the arrangement portion close to the film formation portion is a first arrangement portion, away from The arrangement portion of the film formation portion is a second arrangement portion, and the cooling member displacement portion is at a first position of a position between the first arrangement portion and the second arrangement portion in the displacement direction, and is shifted by The position of the cooling member is changed between a second position in which the second arrangement portion is farther from the film formation portion; and the first arrangement portion is disposed in the first state in a state where the substrate is disposed. In the second positioning portion, the cooling member is placed in the second position in a state in which the substrate is placed. The film forming apparatus according to any one of claims 1 to 13, comprising: a first vacuum chamber that accommodates the film forming portion; and a second vacuum chamber that houses the cooling member.