KR101066979B1 - Apparatus to Sputter - Google Patents

Abstract

A sputter apparatus is disclosed. The sputtering apparatus of the present invention includes a load lock chamber into which a substrate, which is a workpiece, is inserted; And a process chamber connected to the load lock chamber so that the substrate can be transported, and wherein a deposition process for the substrate is performed, the process chamber comprising: a chamber body provided with a heater for heating the substrate in a lower region; A substrate transfer unit having a pair of substrate transfer portions provided opposite to both inner walls of the chamber body so as to transfer the substrates while supporting both sides of the substrate; And a sag prevention unit provided in the chamber body to be spaced apart from the substrate transfer part and supporting at least one region of the substrate to prevent sagging of the substrate. According to the present invention, it is possible to solve the problem of deformation of the shaft due to heat during transfer of the substrate in the process chamber, thereby reducing the deflection phenomenon of the substrate.

Sputter, Deposition, Substrate, Thin Film Solar Cell, Process Chamber

Description

Sputter Device {Apparatus to Sputter}

The present invention relates to a sputter apparatus, and more particularly, to a sputter apparatus that can improve the reliability of the deposition process on the substrate by preventing the substrate from sagging during the transfer process and the deposition process on the substrate.

Solar cells are cells that convert light energy into electrical energy using the properties of semiconductors. Such solar cells are classified into monocrystalline silicon solar cells, polycrystalline silicon solar cells, thin-film solar cells, and the like according to their types.

The thin film solar cell is manufactured in the form of a thin film, and its efficiency is lower than that of a single crystal silicon solar cell, but the manufacturing cost is low, the large area is possible, and the surface is irregular, or it is easy to use in the difficult place. In addition, depending on the type of substrate to be deposited may be transported or stored in a roll like a floor.

Such thin film solar cells are manufactured into products through a number of processes similar to semiconductor processes.

Among many processes, there is a deposition process for depositing a deposition film on the surface of a substrate for manufacturing a thin film solar cell (hereinafter referred to as a substrate). A deposition technique applied to such a deposition process collides thin film particles directly onto the substrate. And sputtering deposition techniques of adsorption and physical vapor deposition, and chemical vapor deposition of chemical vapor deposition, which induces a radical chemical reaction on the substrate and deposits and adsorbs the resulting thin film particles onto the substrate. CVD, Chemical Vapor Deposition) technology.

Here, among these deposition techniques, a deposition technique using sputtering is implemented through a sputter apparatus. The sputtering apparatus includes a load lock chamber into which a substrate is introduced, a process chamber through which a deposition process proceeds, and an unload lock chamber to take out a substrate on which the deposition process is completed, for productivity improvement and convenience of a deposition process. The chambers are in-line.

1 is a view schematically showing a configuration of a process chamber of a sputtering apparatus according to an exemplary embodiment, and FIG. 2 is a plan view of FIG. 1.

As shown in these drawings, the process chamber 10 of the sputtering apparatus according to one conventional embodiment includes a chamber body 11 through which a sputtering process is performed, and a substrate placed at a deposition position in the chamber body 11. A substrate 20 disposed between the target 20 as a sputter source for providing a deposition material toward G), the heater 30 for heating the substrate G to a predetermined temperature, and the target 20 and the heater 30. And a substrate transfer unit 40 having a plurality of substrate transfer portions 41 for transferring G).

The plurality of substrate transfer parts 41 are coupled to each of the plurality of shafts 42 and the plurality of shafts 42, which are arranged side by side along the transfer direction of the substrate G and are rotatable in place, respectively. The substrate G comprises a plurality of rollers 43 on which the substrate G is substantially in contact with and supported.

By the configuration of the substrate transfer unit 40, the substrate G may be introduced into the process chamber 10 from the load lock chamber (not shown), and then transferred to the deposition position where the deposition process will proceed. After completion, the substrate G may be transferred from the process chamber 10 to an unload lock chamber (not shown).

However, in the sputtering apparatus according to the conventional embodiment, when the substrate G is repeatedly loaded and transferred to the substrate transfer unit 40, the shaft 42 may be bent and deformed by the weight of the substrate G. In addition, the shaft 42 of the substrate transfer part 41 may be thermally deformed by the heat dissipated from the heater 30, and the substrate G may be transferred or the substrate G by the deformed shaft 42. In the case of the deposition process for), the transfer operation and the deposition process for the substrate G may not proceed properly due to the sagging of the substrate G.

In addition, in the deposition process for the substrate G, the deposition material provided from the target 20 falls on the substrate transfer unit 40 and the heater 30 as well as the substrate G, so that the substrate transfer unit 40 and the heater ( It may cause a defect in the operation of 30), and thus there is a fear that the reliability of the deposition process is lowered.

Therefore, there is an urgent need to develop a sputtering device having a new structure that prevents sagging of the substrate when the deposition process is performed on the substrate or when the substrate is transferred so that the transfer operation of the substrate and the deposition process on the substrate can be performed reliably.

SUMMARY OF THE INVENTION An object of the present invention is to provide a sputtering apparatus capable of reducing the deflection phenomenon of a substrate by solving a problem of deformation of a shaft due to heat during transfer of the substrate in a process chamber.

The above object is, according to the present invention, a load lock chamber into which the substrate is a workpiece; And a process chamber connected to the load lock chamber so that the substrate can be transported, and a deposition process for the substrate is performed, wherein the process chamber includes a chamber body in which a heater for heating the substrate is provided in a lower region. ; A substrate transfer unit having a pair of substrate transfer portions provided opposite to both inner side walls of the chamber body to transfer the substrate while contacting and supporting both sides of the substrate; And a sag prevention unit provided in the chamber body to be spaced apart from the substrate transfer part, and including a plurality of sag prevention parts supporting at least one region of the substrate to prevent sagging of the substrate. Is achieved by

Here, the plurality of sag prevention portion may be regularly spaced apart from each other on the lower wall of the chamber body.

The deflection prevention unit, a unit housing standing up on the lower wall of the chamber body; And a sag prevention rotary ball coupled to the upper end of the unit housing so as to be relatively rotatable and supporting the substrate.

The upper end of the unit housing is provided with a recessed groove recessed in the inner direction from the upper surface, the deflection preventing rotation ball may be partially inserted into the recessed groove.

A plurality of rolling balls may be regularly arranged on the inner surface of the recessed groove so that the sag-preventing rotating ball may be relatively rotated in place.

The heater plate may further include a radiating plate disposed to be spaced apart from the heater in parallel with the plate surface direction of the heater to uniformly transfer heat emitted from the heater to the substrate.

The deflection prevention part may be provided with a radiation plate mounting jaw for installing the radiation plate is penetrated.

The heater may be a block type heater including a plurality of unit heaters through which the deflection prevention unit penetrates, and the plurality of unit heaters may be assembled to each other in a plate direction of the substrate.

The substrate transfer unit may include: a transfer shaft coupled to the inner wall of the chamber body so as to be relatively rotatable with respect to the inner wall of the chamber body; And a roller coupled to an end of the transfer shaft so as to rotate together with the transfer shaft to support the substrate.

The roller may be a ceramic roller made of a ceramic material.

And an unload lock chamber connected to the process chamber so as to face the load lock chamber, wherein the substrate on which the sputtering process is completed is taken out from the process chamber and stored therein, wherein the substrate is a thin film solar cell. It may be a substrate for manufacturing.

The load lock chamber is provided with a load lock substrate transfer unit inlined with the substrate transfer unit of the process chamber, and the unload lock chamber is provided with an unload lock substrate transfer unit inlined with the substrate transfer unit of the process chamber. Can be.

According to the present invention, it is possible to solve the problem of deformation of the shaft due to heat during transfer of the substrate in the process chamber, thereby reducing the deflection of the substrate than before.

In addition, heat may be uniformly transferred from the heater to the substrate by providing the radiating plate on the heater.

In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the practice of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.

However, hereinafter, the substrate for manufacturing a thin film solar cell will be described as an example of the deposition target of the deposition process, but the deposition target of the present invention is not limited to a substrate for manufacturing a thin film solar cell, and a liquid crystal display (LCD) substrate Various substrates can be applied, including.

3 is a view for explaining a schematic configuration of a sputter apparatus according to an embodiment of the present invention, as shown in this, the sputter apparatus 1 according to an embodiment of the present invention, the substrate (G) A process chamber 100 in which a sputtering process, that is, a physical deposition process, and a load lock coupled to the process chamber 100 and introducing an external substrate G into the process chamber 100 The chamber 200 includes an unload lock chamber 300 coupled to the process chamber 100 so as to face the load lock chamber 200 and taking out the substrate G on which the deposition process is completed, to the outside. do.

The loadlock chamber 200 may include a process chamber (200) so that the deposition process of the substrate G may proceed reliably before the substrate is introduced into the process chamber 100 where the deposition process for the substrate G actually proceeds. It has a high vacuum state similar to 100). Thus, although not shown, the load lock chamber 200 is equipped with a vacuum pump (not shown) to suck the gas in the load lock chamber 200 to make the inside of the load lock chamber 200 in a high vacuum state.

In addition, a preheat heater 210 for preheating the substrate G is mounted in the load lock chamber 200. In order for the actual deposition process to proceed, the substrate G needs to be heated to a predetermined temperature in the process chamber 100. The preheat heater 210 may heat the substrate G to some extent in the load lock chamber 200 in advance. The time for heating the substrate G to a predetermined temperature in the process chamber 100 may be shortened, and thus the deposition process for the substrate G may be performed faster than before.

On the other hand, the unloadlock chamber 300 is a chamber for storing the substrate G for a predetermined time before taking out the substrate G on which the deposition process is completed, for a predetermined time. G) It is responsible for taking out after storing.

To this end, the unload lock chamber 300 is equipped with a cooler 310 for cooling the substrate G heated by a deposition process to a predetermined temperature. This is because the substrate G may be broken by a sudden temperature change when the substrate G is taken out immediately after the deposition process is completed, and thus the substrate G may be broken by the cooler 310 in the unload lock chamber 300. This is to prevent the substrate G from being damaged by lowering the temperature of G) and taking it out.

In addition, each of the load lock chamber 200 and the unload lock chamber 300, as shown in Figure 3, the substrate (at substantially the same height as the substrate transfer unit 140 of the process chamber 100 to be described later ( A load lock substrate transfer unit 240 and an unload lock substrate transfer unit 340 for transferring G) are provided. Therefore, a separate hand robot is not required to transfer the substrate G between the chambers 100, 200, and 300, which not only reduces the size of the equipment but also makes the equipment in-line. Implemented there is an effect that the transfer operation and deposition process of the substrate (G) can be performed more quickly.

The load lock substrate transfer unit 240 and the unload lock substrate transfer unit 340 may be provided in a roller type. However, the configurations of the load lock substrate transfer unit 240 and the unload lock substrate transfer unit 340 are not limited to the roller type structure, and other types of substrate transfer units other than the roller type may be applied.

4 is a schematic plan view of the process chamber shown in FIG. 3, FIG. 5 is a schematic front view of the process chamber of FIG. 4, FIG. 6 is a schematic side view of FIG. 4, and FIG. 7 is a substrate shown in FIG. 4. It is a schematic partially enlarged perspective view for demonstrating the structure of a conveyance part, and FIG. 8 is a schematic diagram for demonstrating the structure of the sag prevention part shown in FIG.

As shown in these drawings, the process chamber 100 of the sputtering apparatus 1 according to an embodiment of the present invention includes a chamber body 110 and a chamber body 110 in a high vacuum state. A target 120 as a sputter source coupled to an upper region of an inner space of the inner space of the substrate and providing a deposition material to the substrate G as a deposition target, and a lower region of the inner space of the chamber body 110. And a plurality of substrates coupled to heaters 130 for heating the substrate G and both inner walls of the chamber body 110 to partially support both sides of the substrate G to transfer the substrate G. A plurality of deflections that prevent the deflection of the substrate G by partially supporting the rear surface of the substrate G by standing on the bottom surface of the chamber body 110 and the substrate transfer unit 140 having the transfer part 141. Deflection prevention unit 150 having a prevention unit 151 and the upper portion of the heater 130 It includes a radiating plate 160 to improve the uniformity of heat dissipated to the substrate (G) from the provided heaters 130.

The chamber body 110 provides a space in a high vacuum state for performing a deposition process on the substrate G. In the internal space of the chamber body 110, the following configuration, for example, the target 120, the heater 130, the substrate transfer unit 140, the sag prevention unit 150 and the radiation plate 160 is provided Although not shown, a gas inlet (not shown) for introducing an inert gas for a deposition process is provided.

In addition, the chamber body 110 is connected to a vacuum pump (not shown) in order to maintain the internal environment in a high vacuum state, and has a structure closed with the outside.

The target 120 is coupled to the upper region of the interior space of the chamber body 110, as shown in FIGS. 5 and 6, to provide the deposition material toward the substrate G.

When the deposition material is generated from the target 120, the inert gas such as argon (Ar) is introduced into the chamber body 110 through a gas inlet, and a negative voltage is applied to the target 120. The electrons emitted from 120 collide with the argon gas so that argon is ionized. The ionized argon is accelerated toward the target 120 by the potential difference and collides with the surface of the target 120. At this time, a neutral target 120 atoms, that is, a deposition material is generated to form a thin film on the substrate G. . That is, the deposition process for the substrate G is performed.

Meanwhile, the heater 130 plays a role of heating the substrate G so that the deposition material provided from the target 120 can be deposited on the substrate G well. The heater 130 has a size similar to the size of the substrate G to apply heat to the front surface of the substrate G, but the block type heater 130 to partially heat the substrate G. Is prepared.

In other words, the heater 130 according to the present embodiment is a block heater 130 in which a plurality of unit heaters 130a are assembled in a plate direction, as shown in FIGS. 4 to 6. Accordingly, the entire surface of the substrate G may be locally heated instead of heated.

On the other hand, the substrate transfer unit 140, as shown in Figures 4 to 6, includes a pair of substrate transfer unit 141 which is provided opposite to each other inner wall facing the inner space of the chamber body 110. do. The pair of substrate transfer parts 141 are provided in plural but are spaced apart along the transfer direction of the substrate G.

In the substrate transfer unit 140 according to the present embodiment, the shaft 41 of the substrate transfer unit 40 (see FIGS. 1 and 2) of the sputtering apparatus according to the conventional embodiment described above may have the weight of the substrate G or the heater ( Unlike the deformation caused by the heat dissipated from 30) to cause the deflection of the substrate G, the deflection prevention unit to be described later has a structure that is not deformed by the weight of the substrate G or the heat dissipated from the heater 130. The deflection phenomenon of the substrate G may be prevented from occurring along with the 150, and the transfer operation of the substrate G may be smoothly performed.

As illustrated in FIGS. 4 and 6, the plurality of substrate transfer parts 141 are spaced apart at regular intervals along the transfer direction of the substrate G from the inner side wall of the chamber body 110. As shown in FIG. 7, the substrate transfer part 141 includes a transfer shaft 142 coupled to the inner wall of the chamber body 110 so as to be relatively rotatable with respect to the inner wall of the chamber body 110. The roller 143 is coupled to an end of the shaft 142 and rotates together with the transfer shaft 142, and the two sides of the substrate G are transported in contact with each other.

Although not illustrated, the transfer shafts 142 of the pair of substrate transfer units 141 of the present embodiment are integrally driven by one driver (not shown). Therefore, when the substrate G is drawn from the load lock chamber 200 into the process chamber 100 or when the substrate G is taken out from the process chamber 100 into the unload lock chamber 300, As a result, the transfer shafts 142 may rotate to transfer the substrate G to a desired area.

However, the scope of the present invention is not limited thereto, and each feed shaft 142 may be driven by being connected to each driving unit. When each feed shaft 142 is driven by being connected to each drive unit, the transfer operation of the substrate G may be performed by the other feed shafts 142 even if some of the feed shafts 142 are not operated. It can be, there is an advantage that can continue the transfer operation of the substrate (G).

The roller 143 is provided with a ceramic roller 143 made of a ceramic material that not only does not damage the substrate G even when it is in contact with the substrate G, but also has durability in high vacuum and high heat conditions. However, this does not correspond to the present embodiment, it is obvious that the roller can be made of a material other than the ceramic material.

In the meantime, when the plurality of pairs of substrate transfer units 141 transfer the substrate G while supporting both sides of the substrate G, the center of the substrate G is caused by the weight of the substrate G. The region may be drooped downward. In order to prevent this, the deflection prevention unit 150 having a plurality of deflection prevention portions 151 is provided on the lower wall of the chamber body 110.

As illustrated in FIG. 4, the plurality of sag prevention parts 151 of the present exemplary embodiment are spaced apart in two rows along the transfer direction of the substrate G. As illustrated in FIG. Each sag prevention portion 151 has a substantially identical structure, and the position of the upper end thereof is substantially the position of the upper end of the roller 143 of the substrate transfer parts 141, as shown in FIGS. 5 and 6. By having the same position, it is possible to prevent the central portion of the substrate G from sagging downward, and also to allow the transfer operation of the substrate G to proceed smoothly.

As illustrated in detail in FIG. 8, each of the plurality of sag prevention parts 151 may be rotated relative to the upper end of the unit housing 154 and the upper end of the unit housing 154. And a sag prevention rotating ball 155 coupled to and substantially supporting the substrate G.

First, the unit housing 154 penetrates and is disposed through the unit heater 130a of the heater 130. In the unit housing 154, the radiating plate mounting jaw 152 flat in the conveying direction of the substrate G is provided at the center portion so that the radiating plate 160 to be described later is installed, and the upper portion is recessed from the upper surface. The groove 153 is provided.

The sag prevention rotary ball 155 is inserted into the recessed groove 153 of the unit housing 154. However, in order to prevent the sag-preventing rotating ball 155 from being detached from the recessed groove 153 arbitrarily, the recessed groove 153 is formed to be recessed to a depth into which at least half of the sag-preventing rotating ball 155 is inserted and recessed. The upper end of the groove 153 is provided with a rotation ball separation prevention projection 158 protruding inward.

On the other hand, the sag-preventing rotating ball 155 serves to prevent sagging of the substrate G by supporting the central portion of the substrate G, but also serves to smoothly transfer the substrate G. To serve.

To this end, a plurality of rolling balls 156 are regularly arranged between the anti-sag rotating ball 155 and the recessed groove 153 so that the anti-sag rotating ball 155 rotates in place.

Due to this structure, the sag-preventing rotating ball 155 supporting the central portion of the substrate G when the substrate G is transferred by the substrate transfer portions 141 is the transfer shaft 142 of the substrate transfer portions 141. Relative rotation in the direction substantially the same as the rotational direction of), thereby allowing the transfer operation of the substrate G to proceed easily without interference.

As described above, the plurality of pairs of substrate transfer parts 141 together with the plurality of deflection prevention parts 151 not only prevent the deflection of the substrate G, but also smoothly transfer the substrate G to the substrate G. The deposition process of the sputtering apparatus 1 on can be carried out reliably.

On the other hand, in order to proceed with the deposition process for the substrate (G), the substrate (G) has to be heated to a predetermined temperature, for this purpose, a heater 130 for dissipating heat is disposed on the lower wall of the chamber body (110) I've done it. However, in the deposition process on the substrate G, the deposition material generated from the target 120 may drop not only on the substrate G but also on the heater 130 disposed below the substrate G, thereby reducing the operating performance of the heater 130. There is.

Therefore, the sputtering apparatus 1 of this embodiment further includes the radiation plate 160 in order to prevent such a problem. The radiation plate 160 is manufactured to have a size similar to that of the heater 130 so as to cover the heater 130, and as shown in detail in FIG. 8, the radiation plate 160 penetrates the deflection preventing unit 151 described above and the unit housing. It is installed on the radiation plate mounting jaw 152 provided in the central region of the (154).

The radiation plate 160 not only prevents the deposition material falling from the target 120 from contacting the heater 130, but also increases the uniformity of heat applied when heat is applied to the substrate G from the heater 130. The heating operation on the substrate G can be carried out reliably.

Hereinafter, the vapor deposition process of the sputter apparatus 1 which has such a structure is demonstrated.

First, after opening the entrance door 220 of the load lock chamber 200 (see FIG. 3), the substrate G is loaded using the hand robot (not shown) and the load lock substrate transfer unit 240 of the load lock chamber. Load on top of. Then, the substrate G is positioned in the central region of the load lock substrate transfer unit 240 by driving the load lock substrate transfer unit 240. At this time, the space in the load lock chamber 200 is maintained in a high vacuum state by a vacuum pump (not shown), and the substrate G before the substrate G is introduced into the process chamber 100 by the preheating heater 130. Can be preheated to a predetermined temperature.

Subsequently, after opening the compartment door 180a between the load lock chamber 200 and the process chamber 100, the load lock substrate transfer unit 240 and the substrate transfer unit of the process chamber 100 of the load lock chamber 200 are opened. Simultaneously driving the 140 to transfer the substrate G in the load lock chamber 200 into the process chamber 100. Here, the deflection prevention unit 151 disposed between the substrate transfer units 141 of the substrate transfer unit 140 supports the substrate G and transfers the substrate G to a position where the deposition process is to be performed.

Subsequently, when argon (Ar) gas is introduced through a gas inlet (not shown) and a negative voltage is applied to the target 120, electrons emitted from the target 120 collide with the argon gas so that argon is ionized. The ionized argon is accelerated toward the target 120 by the potential difference and collides with the surface of the target 120. At this time, a neutral target 120 atoms, that is, a deposition material is generated, and the substrate transfer unit 140 and A thin film is formed on the substrate G loaded on the sag prevention unit 150. At this time, the heater 130 in the process chamber 100 allows the deposition process for the substrate G to proceed well by heating the substrate G, and the radiating plate 160 is a heat applied from the heater 130. Not only can it be uniformly delivered to the substrate G, but also serves to prevent the deposition material falling from the target 120 falls on the heater 130.

When the deposition process for the substrate G is completed, the partition door 180b between the process chamber 100 and the unload lock chamber 300 (see FIG. 3) is opened and the substrate transfer unit 140 of the process chamber 100 is opened. And simultaneously driving the unload lock substrate transfer unit 340 of the unload lock chamber 300 to transfer the substrate G in the process chamber 100 to the unload lock chamber 300. Thereafter, the temperature of the substrate G is lowered to a predetermined temperature by the cooler 310 mounted in the unload lock chamber 300, and then the substrate G is removed through the takeout door 320 of the unload lock chamber 300. Take out.

As described above, according to the present embodiment, the substrate transfer unit 140 and the deflection prevention unit 150 prevent the deflection of the substrate G during the transfer operation of the substrate G or during the deposition process with respect to the substrate G. In this case, the transfer operation of the substrate G and the deposition process for the substrate G may be reliably performed.

In addition, by applying the uniform heat from the heater 130 to the substrate G, which is the workpiece, from the heater 130, the deposition process may not only proceed reliably over the entire surface of the substrate G, but also the target 120. It is also possible to prevent the deposition material falling from the dropping to the heater 130 can be prevented from damaging the heater 130 by the deposition material.

In the above-described embodiment, the plurality of deflection prevention portions are arranged in two rows along the transfer direction of the substrate between the substrate transfer units, but the plurality of deflection prevention portions may support the center portion of the back surface of the substrate so as to support the transfer direction of the substrate. Of course, it may be arranged in a single row along.

In addition, in the above-described embodiment, the heater is a block-type heater in which a plurality of unit heaters are combined, but the heater may be a heater manufactured integrally, not an assembly of the plurality of unit heaters.

As described above, the present invention is not limited to the described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the present invention, which will be apparent to those skilled in the art. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

1 is a view schematically showing a configuration of a process chamber of a sputtering apparatus according to a conventional embodiment.

2 is a plan view of Fig.

3 is a view for explaining a schematic configuration of a sputtering apparatus according to an embodiment of the present invention.

4 is a schematic plan view of the process chamber shown in FIG. 3.

5 is a schematic front view of the process chamber of FIG. 4.

6 is a schematic side view of FIG. 4.

FIG. 7 is a schematic partially enlarged perspective view for describing a configuration of the substrate transfer unit illustrated in FIG. 4.

FIG. 8 is a schematic diagram for describing a configuration of the deflection prevention unit illustrated in FIG. 4.

* Explanation of symbols for the main parts of the drawings

1: sputter device 100: process chamber

110: chamber body 120: target

130: heater 141: substrate transfer unit

141: feed shaft 143: roller

151: sag prevention unit 151: unit housing

152: mounting plate mounting jaw 153: recessed groove

155: sag prevention rotating ball 156: rolling ball

160: spin plate 200: load lock chamber

300: unload lock chamber G: substrate

Claims (12)

A load lock chamber into which a substrate, which is a work object, is inserted; And A process chamber connected to the load lock chamber so that the substrate is transportable, and a deposition process on the substrate is performed; The process chamber, A chamber body provided with a heater for heating the substrate in a lower region; A substrate transfer unit having a pair of substrate transfer portions provided opposite to both inner side walls of the chamber body to transfer the substrate while contacting and supporting both sides of the substrate; And And a sag prevention unit provided in the chamber body to be spaced apart from the substrate transfer part and supporting at least one region of the substrate to prevent sagging of the substrate. The method of claim 1, And the plurality of deflection prevention parts are regularly spaced apart from each other on the lower wall of the chamber body. The method of claim 2, The sag prevention part, A unit housing standing up on a lower wall of the chamber body; And And a sag prevention rotary ball coupled to the upper end of the unit housing so as to be relatively rotatable and supporting the substrate. The method of claim 3, The upper end of the unit housing is provided with a recessed recess formed in the inner direction from the upper surface, The deflection prevention ball is a sputtering device, characterized in that part inserted into the recessed groove. 5. The method of claim 4, A sputtering device, characterized in that a plurality of rolling balls are regularly arranged on the inner surface of the recessed groove so that the sag-preventing rotating ball can be relatively rotated in place. The method of claim 1, And a radiating plate disposed to be spaced apart from the heater in parallel with the plate surface direction of the heater in the upper portion of the heater to uniformly transfer heat emitted from the heater to the substrate. The method of claim 6, Sputtering device characterized in that the deflection prevention portion is provided with a radiation plate mounting jaw for the radiation plate is installed through. The method of claim 1, The heater is a block type heater (Block Type Heater) having a plurality of unit heaters through which the deflection prevention portion penetrates, wherein the plurality of unit heaters are sputter apparatus, characterized in that the mutual assembly in the direction of the plate surface of the substrate. The method of claim 1, The substrate transfer unit, A feed shaft coupled to the inner wall of the chamber body so as to be relatively rotatable with respect to the inner wall of the chamber body; And And a roller coupled to an end of the transfer shaft so as to rotate together with the transfer shaft to support the substrate. 10. The method of claim 9, The roller is a sputtering device, characterized in that the ceramic roller is made of a ceramic material (Ceramic) material. The method of claim 1, And an unload lock chamber connected to the process chamber so as to face the load lock chamber, wherein the substrate on which the deposition process is completed is taken out from the process chamber and stored. The substrate is a sputter device, characterized in that the substrate for manufacturing a thin film solar cell (Thin Film Solar Cell). The method of claim 11, The load lock chamber is provided with a load lock substrate transfer unit inline with the substrate transfer unit of the process chamber, The unload lock chamber is provided with an unload lock substrate transfer unit inlined with the substrate transfer unit of the process chamber.

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