TW201724321A - Plasma confinement ring, plasma processing apparatus and substrate processing method which can improve the global uniformity of plasma treatment - Google Patents
Plasma confinement ring, plasma processing apparatus and substrate processing method which can improve the global uniformity of plasma treatment Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 title claims description 60
- 238000009832 plasma treatment Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 4
- 230000000452 restraining effect Effects 0.000 claims abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 25
- 239000000919 ceramic Substances 0.000 claims description 6
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
Description
本發明係關於半導體加工領域，尤其是關於可提高電漿處理全域均勻性的電漿約束環、電漿處理裝置與處理方法。The present invention relates to the field of semiconductor processing, and more particularly to a plasma confinement ring, a plasma processing apparatus, and a processing method that can improve the uniformity of plasma processing.
目前，隨著超大型積體電路的元件特徵尺寸不斷地等比例縮小，整合度不斷地提高，對各步製程的控制及其製程結果的精確度提出了更高的要求。以蝕刻製程為例，需要基板（晶圓）各區域的蝕刻速率趨於相同，否則將導致晶片成品率不高。因而，有必要持續提高基板各區域加工的均勻性。At present, as the component size of the ultra-large integrated circuit is continuously scaled down, the degree of integration is continuously improved, and higher requirements are imposed on the control of each step process and the accuracy of the process results. Taking the etching process as an example, the etching rate of each region of the substrate (wafer) tends to be the same, otherwise the wafer yield is not high. Therefore, it is necessary to continuously improve the uniformity of processing in each region of the substrate.
本發明提供一種用於電漿處理裝置的電漿約束環，其包括呈環形的壁體，所述壁體所環繞的空間用於約束電漿於其內，所述壁體包括：呈環形的內壁，由導體或半導體材料製成；呈環形的外壁，由電絕緣材料製成。The present invention provides a plasma confinement ring for a plasma processing apparatus comprising a wall having an annular shape, a space surrounded by the wall for restraining a plasma therein, the wall body comprising: a ring shape The inner wall, made of a conductor or a semiconductor material; has an annular outer wall made of an electrically insulating material.
較佳地，所述內壁的材料包括矽或碳化矽。Preferably, the material of the inner wall comprises tantalum or tantalum carbide.
較佳地，所述內壁的表面鍍有石墨。Preferably, the surface of the inner wall is plated with graphite.
較佳地，所述外壁的材料包括石英或陶瓷。Preferably, the material of the outer wall comprises quartz or ceramic.
較佳地，所述內壁接地。Preferably, the inner wall is grounded.
本發明還提供一種電漿處理裝置，包括：由多個壁圍成的反應腔；設置在反應腔內的基座，用於固定基板；設置在反應腔內的氣體噴淋頭，用於引入氣體至反應腔內，所述氣體噴淋頭與所述基座之間為電漿處理區域；如前面所述的電漿約束環，所述電漿約束環設置在所述反應腔內，所述電漿處理區域被所述電漿約束環所環繞。The present invention also provides a plasma processing apparatus comprising: a reaction chamber surrounded by a plurality of walls; a susceptor disposed in the reaction chamber for fixing the substrate; and a gas shower head disposed in the reaction chamber for introduction a gas into the reaction chamber, wherein the gas shower head and the susceptor are plasma processing regions; as described above, the plasma confinement ring is disposed in the reaction chamber, The plasma treatment zone is surrounded by the plasma confinement ring.
較佳地，所述電漿約束環呈空心圓柱形。Preferably, the plasma confinement ring has a hollow cylindrical shape.
較佳地，所述電漿約束環與所述反應腔的側壁之間存在間隙。Preferably, there is a gap between the plasma confinement ring and the sidewall of the reaction chamber.
較佳地，更包括升舉裝置，用於上下移動所述電漿約束環。Preferably, a lifting device is further included for moving the plasma confinement ring up and down.
較佳地，所述升舉裝置包括與電漿約束環接觸的頂針，所述電漿約束環藉由所述頂針實現接地。Preferably, the lifting device comprises a thimble in contact with a plasma confinement ring, the plasma confinement ring being grounded by the thimble.
本發明另提供一種基板處理方法，包括：將基板自基板進出通道移入反應腔；移動電漿約束環並將其停留在工作位置，位於工作位置的電漿約束環遮擋所述基板進出通道，並限定電漿處理區域，所述電漿約束環包括由導體或半導體材料製成的、呈環形的內壁，以及由絕緣材料製成的、呈環形的外壁；通入反應氣體至反應腔，並將其解離為電漿，所述電漿在所述電漿處理區域對基板進行處理，在基板處理過程中，所述電漿約束環的內壁接地。The present invention further provides a substrate processing method, comprising: moving a substrate from a substrate inlet and outlet channel into a reaction chamber; moving a plasma confinement ring and holding it in a working position; and a plasma confinement ring at a working position blocking the substrate in and out of the channel, and Defining a plasma processing zone, the plasma confinement ring comprising an annular inner wall made of a conductor or a semiconductor material, and an annular outer wall made of an insulating material; a reactive gas is introduced into the reaction chamber, and Dissociating it into a plasma, the plasma processing the substrate in the plasma processing region, the inner wall of the plasma confinement ring being grounded during substrate processing.
較佳地，更包括：移動電漿約束環並將其停留在傳送位置，位於傳送位置的電漿約束環曝露所述基板進出通道，以移出處理完畢的基板或移入待處理的基板至反應腔。Preferably, the method further comprises: moving the plasma confinement ring and staying at the transfer position, and the plasma confinement ring at the transfer position exposing the substrate access passage to remove the processed substrate or moving into the substrate to be processed to the reaction chamber .
較佳地，所述反應腔包括頂壁、底壁與側壁，所述電漿約束環沿所述側壁在豎直方向上移動以在工作位置和傳送位置之間切換。Preferably, the reaction chamber includes a top wall, a bottom wall and a side wall, and the plasma confinement ring moves in the vertical direction along the side wall to switch between the working position and the transfer position.
較佳地，所述電漿約束環與所述反應腔的側壁之間存在間隙。Preferably, there is a gap between the plasma confinement ring and the sidewall of the reaction chamber.
較佳地，所述內壁的材料包括矽或碳化矽。Preferably, the material of the inner wall comprises tantalum or tantalum carbide.
較佳地，所述外壁的材料包括石英或陶瓷。Preferably, the material of the outer wall comprises quartz or ceramic.
為使本發明的內容更加清楚易懂，以下結合說明書圖式，對本發明的內容作進一步說明。當然本發明並不局限於該具體實施例，本領域內的技術人員所熟知的一般替換也涵蓋在本發明的保護範圍內。In order to make the content of the present invention clearer and easier to understand, the contents of the present invention will be further described below in conjunction with the drawings. Of course, the invention is not limited to the specific embodiment, and general replacements well known to those skilled in the art are also encompassed within the scope of the invention.
第1圖所示為一種電容耦合式電漿蝕刻裝置。蝕刻裝置包括氣密的反應腔2。圍成反應腔2的各壁被接地。反應腔2內設置有用於固定基板W的基座3、用於引入蝕刻氣體至反應腔2內的氣體噴淋頭4，氣體噴淋頭4與基座3之間為電漿處理區域PS。通常氣體噴淋頭4可作為上電極，基座3可作為下電極。高頻射頻功率9施加在基座3上，用於將電漿處理區域PS內的蝕刻氣體解離為電漿與自由基。到達基板W上表面的電漿與自由基可將基板W蝕刻成預定的圖案。蝕刻所產生的蝕刻副產物與未來得及參與反應的蝕刻氣體會被泵（未圖示）抽出反應腔2。Figure 1 shows a capacitively coupled plasma etching apparatus. The etching device includes a gas-tight reaction chamber 2. The walls surrounding the reaction chamber 2 are grounded. The reaction chamber 2 is provided with a susceptor 3 for fixing the substrate W, a gas shower head 4 for introducing an etching gas into the reaction chamber 2, and a plasma processing region PS between the gas shower head 4 and the susceptor 3. Usually, the gas shower head 4 can function as an upper electrode and the susceptor 3 can function as a lower electrode. A high frequency RF power 9 is applied to the susceptor 3 for dissociating the etching gas in the plasma processing region PS into plasma and radicals. The plasma and radicals reaching the upper surface of the substrate W can etch the substrate W into a predetermined pattern. The etching by-products generated by the etching and the etching gas which is expected to participate in the reaction in the future are pumped out of the reaction chamber 2 by a pump (not shown).
反應腔2內還可設置有電漿約束環6，電漿約束環6用於將生成的電漿約束在其內部，也用於將反應腔2的側壁22電絕緣。這使得電漿約束環6的製作材料通常被局限於絕緣材料，如石英或陶瓷。若電漿約束環6為導電或半導電材料，則會有電弧放電等方面的隱憂。A plasma confinement ring 6 may also be disposed within the reaction chamber 2 for confining the generated plasma within the interior thereof, as well as for electrically isolating the sidewalls 22 of the reaction chamber 2. This makes the material of the plasma confinement ring 6 generally limited to insulating materials such as quartz or ceramic. If the plasma confinement ring 6 is a conductive or semi-conductive material, there is a concern about arc discharge and the like.
第2圖是第1圖的俯視圖，其顯示了反應腔2與基座3的相對位置。為方便基板W進出反應腔2，反應腔2的側壁22上開設有狹槽，作為基板W進出通道26。由於基板W進出通道26的存在，會導致基板W進出通道26所在處的側壁22的射頻接地狀態不同於側壁22的其它位置，這會進一步導致電漿在側壁22周圍分佈不均。不僅如此，由於電漿約束環6’為絕緣材質，射頻路徑為自基座3至氣體噴淋頭4，如第3圖所示。這會使得電漿被主要約束在正對基座3與氣體噴淋頭4的區域，電漿的這種分佈會造成基板W邊緣區域的蝕刻速率明顯小於基板W中央區域。Fig. 2 is a plan view of Fig. 1 showing the relative position of the reaction chamber 2 and the susceptor 3. In order to facilitate the entry and exit of the substrate W into the reaction chamber 2, a slit is formed in the side wall 22 of the reaction chamber 2 as the substrate W to enter and exit the channel 26. Due to the presence of the substrate W in and out of the channel 26, the RF grounding state of the sidewall 22 where the substrate W enters and exits the channel 26 is different from the other locations of the sidewall 22, which further causes the plasma to be unevenly distributed around the sidewall 22. Moreover, since the plasma confinement ring 6' is an insulating material, the radio frequency path is from the susceptor 3 to the gas shower head 4, as shown in Fig. 3. This causes the plasma to be mainly confined to the area facing the susceptor 3 and the gas showerhead 4, and this distribution of the plasma causes the etch rate of the edge region of the substrate W to be significantly smaller than the central region of the substrate W.
第4圖是依據本發明一個實施例的電漿處理裝置的結構示意圖，其用於提高電漿在各區域分佈的均勻性。電漿處理裝置可為電漿蝕刻裝置，比如，電容耦合式電漿蝕刻裝置。Fig. 4 is a schematic view showing the structure of a plasma processing apparatus according to an embodiment of the present invention for improving the uniformity of distribution of plasma in various regions. The plasma processing device can be a plasma etching device, such as a capacitively coupled plasma etching device.
如第4圖所示，電漿處理裝置包括由底壁（未圖示）、側壁22與頂壁（未圖示）圍成的反應腔2。圍成反應腔2的各壁被接地。反應腔2內設置有用於固定基板W的基座3（基座3設置在反應腔2底壁的上方）、用於引入蝕刻氣體至反應腔2內的氣體噴淋頭4（氣體噴淋頭4設置在反應腔2頂壁的下表面，或可將氣體噴淋頭4看作反應腔2頂壁的一部分），氣體噴淋頭4與基座3之間為電漿處理區域PS。通常氣體噴淋頭4可作為上電極，基座3可作為下電極。高頻射頻功率9施加在基座3上，用於將電漿處理區域PS內的蝕刻氣體解離為電漿與自由基。到達基板W上表面的電漿與自由基可將基板W蝕刻成預定的圖案。蝕刻所產生的蝕刻副產物與未來得及參與反應的蝕刻氣體會被泵（未圖示）抽出反應腔2。基座3的週邊還可設置有出氣裝置H，被泵抽出的氣體會優先藉由出氣裝置H。出氣裝置H包括若干細長的通孔，組成通孔的側壁22上帶有與反應腔2內電漿電性相反的電荷，使得將被氣體攜帶的電漿在藉由通孔時被中和，從而可避免電漿進入下游的排氣管路。As shown in Fig. 4, the plasma processing apparatus includes a reaction chamber 2 surrounded by a bottom wall (not shown), a side wall 22, and a top wall (not shown). The walls surrounding the reaction chamber 2 are grounded. The reaction chamber 2 is provided with a susceptor 3 for fixing the substrate W (the susceptor 3 is disposed above the bottom wall of the reaction chamber 2), and a gas shower head 4 for introducing an etching gas into the reaction chamber 2 (gas shower head) 4 is disposed on the lower surface of the top wall of the reaction chamber 2, or the gas shower head 4 can be regarded as a part of the top wall of the reaction chamber 2), and the plasma treatment area PS is between the gas shower head 4 and the susceptor 3. Usually, the gas shower head 4 can function as an upper electrode and the susceptor 3 can function as a lower electrode. A high frequency RF power 9 is applied to the susceptor 3 for dissociating the etching gas in the plasma processing region PS into plasma and radicals. The plasma and radicals reaching the upper surface of the substrate W can etch the substrate W into a predetermined pattern. The etching by-products generated by the etching and the etching gas which is expected to participate in the reaction in the future are pumped out of the reaction chamber 2 by a pump (not shown). An air outlet device H may be disposed around the base 3, and the pumped gas will preferentially pass through the air outlet device H. The air outlet device H includes a plurality of elongated through holes, and the side walls 22 constituting the through holes have electric charges electrically opposite to the plasma in the reaction chamber 2, so that the plasma to be carried by the gas is neutralized by the through holes. Thereby, the plasma can be prevented from entering the downstream exhaust line.
為改善電漿分佈的均勻性，電漿處理裝置還包括一種新型的電漿約束環6。如第4與5圖（第5圖是電漿約束環6的俯視圖）所示，電漿約束環6包括呈環形的壁體，壁體所環繞的空間用於約束電漿於其內，壁體包括由導體或半導體材料製成的呈環形的內壁61、由電絕緣材料製成的呈環形的外壁63。在利用電漿進行處理（比如蝕刻）的過程中，導電或半導電的內壁61可被接地。In order to improve the uniformity of the plasma distribution, the plasma processing apparatus also includes a novel plasma confinement ring 6. As shown in Figures 4 and 5 (figure 5 is a plan view of the plasma confinement ring 6), the plasma confinement ring 6 includes a ring-shaped wall body, the space surrounded by the wall body is used to constrain the plasma therein, the wall The body comprises an annular inner wall 61 made of a conductor or a semiconductor material, and an annular outer wall 63 made of an electrically insulating material. The conductive or semiconductive inner wall 61 can be grounded during processing (such as etching) using plasma.
接地的內壁61加強了基板W邊緣區域的射頻耦合，使得基板W中心區域和邊緣區域的電漿分佈變得更均勻。不僅如此，由於反應腔2的側壁22被內壁61電隔離於電漿處理區域PS，使得由基板W進出通道26（如第2圖所示）所帶來的反應腔2側壁22的不對稱性對電漿分佈的影響也顯著降低，幾乎不再對處理製程起負面作用。外環63則起到電絕緣反應腔2側壁22的作用，避免側壁22與電漿約束環6之間的間隙G內產生電漿或電弧放電現象。The grounded inner wall 61 reinforces the radio frequency coupling of the edge regions of the substrate W such that the plasma distribution of the central and edge regions of the substrate W becomes more uniform. Moreover, since the side wall 22 of the reaction chamber 2 is electrically isolated from the plasma processing region PS by the inner wall 61, the asymmetry of the side wall 22 of the reaction chamber 2 caused by the substrate W entering and exiting the channel 26 (as shown in Fig. 2) The effect of sex on the plasma distribution is also significantly reduced, and it almost no longer has a negative effect on the processing process. The outer ring 63 functions to electrically insulate the side wall 22 of the reaction chamber 2 to avoid plasma or arc discharge in the gap G between the side wall 22 and the plasma confinement ring 6.
在本實施例中，電漿約束環6整體呈空心圓柱形。但在其它實施例中，電漿約束環6可為其它空心形狀，如，上下端寬、中間窄的環形，或其它不規則的環形。In the present embodiment, the plasma confinement ring 6 has a hollow cylindrical shape as a whole. However, in other embodiments, the plasma confinement ring 6 can be other hollow shapes, such as a wide upper and lower end, a narrow inner ring, or other irregular annular shape.
用於製備內壁61的材料可包括矽或碳化矽等。作為內壁61的矽或碳化矽的內表面可進一步鍍一層石墨（graphite），以減少顆粒雜質的產生。用於製備外壁63的材料可包括石英或陶瓷等。The material for preparing the inner wall 61 may include tantalum or tantalum carbide or the like. The inner surface of the crucible or tantalum carbide as the inner wall 61 may be further plated with a graphite to reduce the generation of particulate impurities. The material used to prepare the outer wall 63 may include quartz or ceramic or the like.
說明一點，這裡所說的內壁61、外壁63，並不表示內壁61是電漿約束環6的最內層結構、外壁63是電漿約束環6的最外層結構。這裡所說的內與外僅在強調內壁61與外壁63之間的相對關係，即，內壁61比外壁63更靠內（即更靠近反應腔2內的電漿處理區域PS），外壁63比內壁61更靠外（即更靠近反應腔2的側壁22）。It should be noted that the inner wall 61 and the outer wall 63 referred to herein do not mean that the inner wall 61 is the innermost layer structure of the plasma confinement ring 6, and the outer wall 63 is the outermost layer structure of the plasma confinement ring 6. Here, the inside and the outside only emphasize the relative relationship between the inner wall 61 and the outer wall 63, that is, the inner wall 61 is located further inside than the outer wall 63 (i.e., closer to the plasma processing region PS in the reaction chamber 2), the outer wall 63 is more outward than the inner wall 61 (i.e., closer to the side wall 22 of the reaction chamber 2).
電漿約束環6可以是可上下移動的結構，即，電漿約束環6至少具有兩個狀態/位置：工作位置與傳送位置。位於工作位置的電漿約束環6遮擋基板W進出通道26，並環繞電漿處理區域PS。位於傳送位置的電漿約束環6曝露基板W進出通道26，以移出處理完畢的基板W或移入待處理的基板W至反應腔2。The plasma confinement ring 6 can be a structure that can be moved up and down, that is, the plasma confinement ring 6 has at least two states/positions: a working position and a transfer position. The plasma confinement ring 6 at the working position blocks the substrate W in and out of the channel 26 and surrounds the plasma processing region PS. The plasma confinement ring 6 at the transfer position exposes the substrate W into and out of the channel 26 to remove the processed substrate W or move into the substrate W to be processed to the reaction chamber 2.
對應的，電漿處理裝置還可包括用於上下移動電漿約束環6的升舉裝置（未圖示）。具體的，升舉裝置可包括與電漿約束環6接觸的頂針76，電漿約束環6可藉由頂針76實現接地。Correspondingly, the plasma processing apparatus may further include a lifting device (not shown) for moving the plasma confinement ring 6 up and down. Specifically, the lifting device may include a thimble 76 that is in contact with the plasma confinement ring 6, and the plasma confinement ring 6 may be grounded by the ejector pin 76.
第6圖是依據本發明一個實施例的基板W處理方法的流程示意圖。如第6圖所示，基板W處理方法包括：Figure 6 is a flow chart showing a method of processing a substrate W according to an embodiment of the present invention. As shown in FIG. 6, the substrate W processing method includes:
將基板W自基板W進出通道26移入反應腔2；Transfer the substrate W from the substrate W into and out of the channel 26 into the reaction chamber 2;
移動電漿約束環6並將其停留在工作位置，位於工作位置的電漿約束環6遮擋基板W進出通道26，並限定一電漿處理區域PS，電漿約束環6包括由導體或半導體材料製成的、呈環形的內壁61，以及由絕緣材料製成的、呈環形的外壁63；Moving the plasma confinement ring 6 and holding it in the working position, the plasma confinement ring 6 at the working position blocks the substrate W into and out of the channel 26 and defines a plasma processing zone PS comprising a conductor or semiconductor material a finished annular inner wall 61 and an annular outer wall 63 made of an insulating material;
通入反應氣體至反應腔2，並將其解離為電漿，電漿在電漿處理區域PS對基板W進行處理，在基板W處理過程中，電漿約束環6的內壁61接地。The reaction gas is introduced into the reaction chamber 2, and is dissociated into a plasma. The plasma processes the substrate W in the plasma processing region PS. During the processing of the substrate W, the inner wall 61 of the plasma confinement ring 6 is grounded.
在一片或一批基板W處理完成後，可移動電漿約束環6並將其停留在傳送位置，位於傳送位置的電漿約束環6曝露基板W進出通道26，以移出處理完畢的基板W或移入待處理的基板W至反應腔2。After the processing of one or a batch of substrates W is completed, the plasma confinement ring 6 can be moved and stayed at the transfer position, and the plasma confinement ring 6 at the transfer position exposes the substrate W into and out of the channel 26 to remove the processed substrate W or The substrate W to be processed is transferred to the reaction chamber 2.
雖然本發明已以較佳實施例揭示如上，然諸多實施例僅為了便於說明而舉例而已，並非用以限定本發明，本領域的技術人員在不脫離本發明精神和範圍的前提下可作若干的更動與潤飾，本發明所主張的保護範圍應以權利要求書為準。The present invention has been described in terms of the preferred embodiments thereof, and the present invention is intended to be illustrative only and not to limit the scope of the invention, and may be made by those skilled in the art without departing from the spirit and scope of the invention. The scope of protection claimed by the present invention is subject to the claims.
2‧‧‧反應腔
3‧‧‧基座
4‧‧‧氣體噴淋頭
6、6’‧‧‧電漿約束環
9‧‧‧高頻射頻功率
22‧‧‧側壁
26‧‧‧進出通道
61‧‧‧內壁
63‧‧‧外壁
76‧‧‧頂針
G‧‧‧間隙
H‧‧‧出氣裝置
W‧‧‧基板
PS‧‧‧電漿處理區域2‧‧‧Reaction chamber
3‧‧‧Base
4‧‧‧ gas sprinkler
6, 6'‧‧‧ plasma confinement ring
9‧‧‧High frequency RF power
22‧‧‧ side wall
26‧‧‧ access channel
61‧‧‧ inner wall
63‧‧‧ outer wall
76‧‧‧ thimble
G‧‧‧ gap
H‧‧‧Exhaust device
W‧‧‧Substrate
PS‧‧‧plasma processing area
第1至3圖是一種電容耦合式電漿蝕刻裝置的示意圖。Figures 1 to 3 are schematic views of a capacitively coupled plasma etching apparatus.
第4與5圖是依據本發明一個實施例的電漿處理裝置的結構示意圖。4 and 5 are schematic views showing the structure of a plasma processing apparatus according to an embodiment of the present invention.
第6圖是依據本發明一個實施例的基板處理方法的流程示意圖。Figure 6 is a flow chart showing a substrate processing method in accordance with one embodiment of the present invention.
2‧‧‧反應腔 2‧‧‧Reaction chamber
3‧‧‧基座 3‧‧‧Base
4‧‧‧氣體噴淋頭 4‧‧‧ gas sprinkler
6‧‧‧電漿約束環 6‧‧‧ plasma confinement ring
9‧‧‧高頻射頻功率 9‧‧‧High frequency RF power
22‧‧‧側壁 22‧‧‧ side wall
61‧‧‧內壁 61‧‧‧ inner wall
63‧‧‧外壁 63‧‧‧ outer wall
G‧‧‧間隙 G‧‧‧ gap
H‧‧‧出氣裝置 H‧‧‧Exhaust device
W‧‧‧基板 W‧‧‧Substrate
PS‧‧‧電漿處理區域 PS‧‧‧plasma processing area
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