CN112802729B - Isolating ring with temperature maintaining device - Google Patents
Isolating ring with temperature maintaining device Download PDFInfo
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- CN112802729B CN112802729B CN201911106901.8A CN201911106901A CN112802729B CN 112802729 B CN112802729 B CN 112802729B CN 201911106901 A CN201911106901 A CN 201911106901A CN 112802729 B CN112802729 B CN 112802729B
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- ring
- isolating ring
- isolating
- spacer ring
- plasma
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 85
- 238000006243 chemical reaction Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229920000642 polymer Polymers 0.000 claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 16
- 239000007921 spray Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 33
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000009413 insulation Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000005350 fused silica glass Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000004927 fusion Effects 0.000 claims description 3
- 239000011325 microbead Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000012720 thermal barrier coating Substances 0.000 claims description 2
- 230000000452 restraining effect Effects 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 14
- 238000002955 isolation Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000002401 inhibitory effect Effects 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a spacer ring with a temperature maintaining device, which is arranged in a plasma processing device, wherein the plasma processing device comprises a reaction cavity surrounded by a plurality of walls, a gas spray head for introducing gas into the reaction cavity is arranged at the upper part of the reaction cavity, a base for bearing a substrate is arranged at the lower part of the reaction cavity, plasma for processing the substrate is formed between the gas spray head and the base, the spacer ring surrounds the gas spray head and limits the plasma in the wall body arranged on the spacer ring, the spacer ring comprises an inner spacer ring close to the plasma and an outer spacer ring surrounding the inner spacer ring, a temperature maintaining device is arranged between the inner spacer ring and the outer spacer ring and used for maintaining the temperature of the inner spacer ring so as to prevent the polymer from depositing on the surface of the inner spacer ring, and the spacer ring with the temperature maintaining device can continuously maintain high temperature so as to effectively inhibit the generation of the polymer.
Description
Technical Field
The invention relates to the technical field of plasma etching, in particular to an isolation ring with a temperature maintaining device for inhibiting polymer deposition.
Background
In a plasma etching apparatus, an isolation ring is used to achieve isolation between the plasma and the side wall of the reaction chamber. During the plasma etching process, the temperature of the isolating ring can be raised due to the thermal power formed by the energy carried by the plasma, but the isolating ring is arranged in a whole in the prior art, so that the part of the isolating ring close to the plasma is difficult to be raised to the temperature required for inhibiting polymer deposition, the polymer is often deposited on the surface of the isolating ring when the plasma is used, and the pollution problem of the substrate can be caused by dropping particles of the deposited polymer onto the substrate, so that the quality of the substrate and the uniformity of the substrate treatment cannot be ensured.
Accordingly, there is a need for a solution that can achieve continuous maintenance of high temperature of the spacer ring while effectively suppressing the generation of polymer.
Disclosure of Invention
In view of the above, the present invention provides a spacer with a temperature maintaining device, which effectively solves the problems existing in the prior art, so that the portion of the spacer, which is close to the plasma, is rapidly heated to a temperature required for effectively inhibiting the generation of polymer.
In order to achieve the above object, the present invention provides a spacer ring with a temperature maintaining device, which is disposed in a plasma processing device, the plasma processing device includes a reaction chamber surrounded by a plurality of walls, a gas shower head for introducing gas into the reaction chamber is disposed at an upper portion of the reaction chamber, a base for carrying a substrate is disposed at a lower portion of the reaction chamber, a plasma for processing the substrate is formed between the gas shower head and the base, the spacer ring surrounds the gas shower head and limits the plasma in the wall provided in the spacer ring, the spacer ring includes an inner spacer ring adjacent to the plasma and an outer spacer ring surrounding the inner spacer ring, and a temperature maintaining device is disposed between the inner spacer ring and the outer spacer ring for maintaining a temperature of the inner spacer ring to prevent the polymer from depositing on a surface of the inner spacer ring.
Optionally, the temperature maintaining device is a thermal insulating coating, and the thermal insulating coating is arranged between the inner isolating ring and the outer isolating ring.
Optionally, the thermal barrier coating is applied to at least one of the opposed surfaces of the inner and outer spacer rings.
Optionally, at least one of the opposite surfaces of the inner and outer spacer rings is concavely provided with a groove, and the thermal insulation coating is coated in the groove.
Optionally, the thickness of the thermal insulation coating is 0.5mm to 1mm, and the depth of the groove is greater than 0.5mm.
Optionally, the thermal insulation coating is mainly formed by nano hollow ceramic microbeads.
Optionally, the temperature maintaining device is an internal vacuum or an annular channel internally filled with a heating gas or a heating liquid.
Optionally, the annular channel is formed in an inner region of the spacer ring, and at least one of the surfaces of the inner spacer ring opposite to the outer spacer ring is hollowed out to form the annular channel.
Optionally, the annular channel is vacuum sealed during the process of forming the annular channel.
Optionally, the isolating ring is connected and arranged in the reaction cavity by a lifting device with a pipeline inside, a through hole for communicating the annular channel with the pipeline is arranged on the isolating ring, and the pipeline is used for vacuumizing the annular channel.
Optionally, the isolating ring is connected and arranged in the reaction cavity by a lifting device with a pipeline inside, a through hole for communicating the annular channel with the pipeline is arranged on the isolating ring, and the pipeline is used for circularly filling the heating gas or the heating liquid into the annular channel.
Optionally, the annular channel is filled with high-pressure hot nitrogen.
Optionally, the isolating ring is provided with a filling port and a drawing port which are communicated to the annular channel, and the filling port and the drawing port are used for filling or drawing the heating gas or the heating liquid into or out of the annular channel through a pipeline which is communicated to the reaction cavity.
Optionally, the outer spacer ring is made of fused silica material.
Optionally, the inner spacer ring is made of fused silica material, monocrystalline silicon material or silicon carbide material.
Optionally, the volume of the outer isolating ring accounts for 65% -92% of the whole volume of the isolating ring, and the volume of the inner isolating ring accounts for 8% -35% of the whole volume of the isolating ring.
Optionally, the heat capacity of the outer isolating ring accounts for 65% -92% of the whole heat capacity of the isolating ring, and the heat capacity of the inner isolating ring accounts for 8% -35% of the whole heat capacity of the isolating ring.
Optionally, the mass of the outer isolating ring accounts for 65% -92% of the total mass of the isolating ring, and the mass of the inner isolating ring accounts for 8% -35% of the total mass of the isolating ring.
Optionally, the inner spacer ring and the outer spacer ring are formed as a whole by fusion welding or bolting.
The present invention also provides a plasma processing apparatus comprising:
a reaction chamber surrounded by a plurality of walls;
the gas spray head is arranged in the reaction cavity and is used for introducing gas into the reaction cavity;
the base is arranged in the reaction cavity and used for bearing a substrate, and plasma for processing the substrate is formed between the gas spray head and the base;
a spacer ring surrounding the gas showerhead and confining a plasma, the spacer ring having any of the features described above.
Compared with the prior art, the technical scheme provided by the application has at least the following advantages: the isolating ring is divided into an inner isolating ring and an outer isolating ring, a temperature maintaining device for effectively maintaining the inner isolating ring at a high temperature is arranged between the inner isolating ring and the outer isolating ring, the temperature maintaining device is used for inhibiting the temperature of the inner isolating ring from being transmitted outwards or continuously heating the inner isolating ring, and the temperature of the inner isolating ring is raised and maintained to a temperature required by effectively inhibiting the generation of polymers in a short time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing a structure of a plasma etching apparatus with a temperature maintaining device according to a first embodiment;
FIG. 2 discloses a schematic diagram of an isolation ring with a temperature maintenance device according to a first embodiment;
FIG. 3 discloses a schematic diagram of an isolator ring with a temperature maintenance device according to a second embodiment;
FIG. 4 is a schematic diagram showing a third embodiment of a plasma etching apparatus with a temperature maintaining device for an isolation ring;
Fig. 5 discloses a schematic diagram of an isolation ring with a temperature maintenance device according to a third embodiment.
Fig. 6 discloses a schematic diagram of an isolation ring with a temperature maintenance device according to a fourth embodiment.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 shows a schematic structural diagram of a plasma processing apparatus, specifically, a Capacitively Coupled Plasma (CCP) etching device, which is a device for generating plasma in a reaction chamber by a radio frequency power source applied to a polar plate through capacitive coupling and for etching. Which includes a vacuum reaction chamber 100, the vacuum reaction chamber 100 including a generally cylindrical reaction chamber side wall 100a and a top wall 100b made of a metal material. The upper part of the reaction chamber 100 is provided with a gas shower head 110 and a base 111 which is positioned at the lower part of the reaction chamber 100 opposite to the gas shower head 110, the gas shower head 110 is connected with a gas supply device and is used for introducing reaction gas into the vacuum reaction chamber 100 and simultaneously used as an upper electrode of the vacuum reaction chamber 100, the base 111 is used for bearing a substrate w to be processed and simultaneously used as a lower electrode of the vacuum reaction chamber 100, and a plasma reaction area is formed between the upper electrode and the lower electrode. At least one high-frequency radio-frequency power supply is applied to one of the upper electrode or the lower electrode, and a radio-frequency electric field is generated between the upper electrode and the lower electrode and used for dissociating the reaction gas into plasma, and the plasma acts on the substrate w to be processed to realize etching processing of the substrate w.
The reaction chamber 100 further includes a mounting substrate 112 disposed above the gas shower head 110, and the gas shower head 110 is fixedly connected to the reaction chamber top wall 100b through the mounting substrate 112. A spacer 113 surrounds the gas shower head 110 for confining the plasma in the wall of the spacer 113 to prevent the plasma from diffusing and corroding the walls of the chamber 100. The spacer 113 is lifted and lowered in the reaction chamber 100 by a lifting device 119. The electrostatic chuck 114 is disposed on the base 111, and a dc electrode is disposed inside the electrostatic chuck 114, and a dc attraction is generated between the back surface of the substrate w and the carrying surface of the electrostatic chuck 114 by the dc electrode to fix the substrate w. A focus ring 115 and an edge ring 116 are disposed around the susceptor 111, and the focus ring 115 and the edge ring 116 are used to adjust an electric field or temperature distribution around the substrate w, thereby improving uniformity of processing of the substrate w. The plasma confinement ring 117 is arranged around the edge ring 116, the exhaust channel is arranged on the plasma confinement ring 117, and the reaction area between the upper electrode and the lower electrode is confined while the reaction gas is exhausted by reasonably arranging the depth-to-width ratio of the exhaust channel, so that the plasma is prevented from leaking to the non-reaction area and the damage to the components in the non-reaction area is avoided. A ground ring 118 is provided below the plasma confinement ring 117 to provide an electric field shield to prevent plasma leakage. And a high-frequency radio frequency power supply is applied to the upper electrode or the lower electrode through a high-frequency radio frequency matching network and is used for controlling the plasma concentration in the reaction cavity. And a bias radio frequency power supply is applied to the base and used for controlling the direction of the plasma.
In the plasma etching process, the temperature of the isolating ring is increased under the bombardment effect of plasma, when the temperature of the inner surface of the isolating ring is increased to 120 ℃ or above, polymer deposition on the surface of the isolating ring can be avoided, but due to the fact that the volume and the mass of the isolating ring of the traditional integrated design are large, heat generated after the inner surface of the isolating ring is bombarded by the plasma is outwards diffused, the part of the isolating ring, which is close to the plasma, is difficult to be heated to the temperature required for inhibiting polymer deposition, the polymer is deposited on the surface of the isolating ring by the plasma, and the pollution problem of the substrate is caused by the fact that particles of the deposited polymer fall onto the substrate, and the quality of the substrate and the uniformity of substrate treatment cannot be ensured.
In order to solve the problem of polymer deposition on the surface of the isolating ring, the application provides an isolating ring with a temperature maintaining device, which comprises an inner isolating ring close to plasma and an outer isolating ring surrounding the inner isolating ring, wherein the volumes of the inner isolating ring and the outer isolating ring can be the same or different. The inner isolating ring is made of fused quartz material, monocrystalline silicon material or silicon carbide material, and the volume, mass and heat capacity of the inner isolating ring respectively account for 8% -35% of the whole isolating ring. The outer isolating ring is made of fused quartz material, and the volume, mass and heat capacity of the outer isolating ring respectively account for 65% -92% of the whole isolating ring. A temperature maintaining device is arranged between the inner isolating ring and the outer isolating ring and is used for maintaining the temperature of the inner isolating ring at a higher temperature so as to prevent polymer from depositing on the surface of the inner isolating ring. The inner isolating ring and the outer isolating ring are formed into a whole in a fusion welding mode, or a nut is arranged in the inner isolating ring, a screw is arranged on the outer isolating ring, and the screw is connected to the nut in a bolt mode.
Referring to fig. 1 and 2, a first embodiment for avoiding polymer deposition is shown. At least one of the surfaces of the inner spacer ring 113a and the outer spacer ring 113b of the spacer ring 113 provided in this embodiment is coated with a thermal insulation coating 113c. The main component of the thermal insulation coating 113c is nano hollow ceramic microbeads, the thickness of which is about 0.5mm-1mm. The heat insulation coating 113c has the characteristics of low heat conductivity, high efficiency heat insulation, high temperature resistance, insulation pressure resistance and the like, the heat insulation and heat preservation inhibition efficiency can reach more than 90%, and the inner isolation ring 113a can be prevented from transmitting the temperature to the outer isolation ring 113b. In this embodiment, the heat capacity of the inner isolation ring 113a is only 8% -35% of the whole heat capacity of the isolation ring 113, and compared with the conventional one-piece isolation ring, the thermal power generated by the same plasma energy is applied to the inner isolation ring 113a with the whole heat capacity of 8% -35%, so that the temperature rising rate of the inner isolation ring 113a is accelerated, and the temperature on the inner isolation ring 113a is not transferred to the outer isolation ring 113b due to the heat insulation protection of the heat insulation coating 113c, and the inner isolation ring 113a can be heated to a higher temperature. The deposition of the polymer can be effectively suppressed when the inner spacer 113a of the spacer 113 is heated to 120 degrees celsius and above. Compared with the conventional one-piece spacer ring, the temperature of the inner spacer ring 113a can be raised to 120 ℃ within about 10-19 minutes, and the conventional one-piece spacer ring requires thirty minutes or more to heat to 60 ℃ due to the large mass and large heat capacity, and is not easily heated to 120 ℃ to cause polymer deposition on the surface of the spacer ring.
Referring to fig. 3, a second embodiment for avoiding polymer deposition is shown, which is different from the first embodiment in that: in the spacer 123 provided in this embodiment, at least one of the surfaces of the inner spacer 123a and the outer spacer 123b opposite to each other is concavely provided with a groove D, and a thermal insulation coating 123c is coated in the groove D to seal the groove D. The depth of the groove D in this embodiment is set to 0.5mm to 1mm, and the thickness of the thermal insulation coating 123c is set to 0.5mm to 1mm. The same technical effects as in the first embodiment can be achieved by coating the heat insulating coating 123c on the groove D provided in the spacer ring 123. Of course, in the present embodiment, the depth of the groove may be set to be greater than the thickness of the thermal insulation coating, that is, the depth of the groove is greater than 0.5mm and not limited to 1mm, so that the thermal insulation coating does not completely seal the groove, and an unsealed space is formed on the surface of the thermal insulation coating, which can achieve the same technical effect as required by the present application.
Referring to fig. 4 and 5, a third embodiment for avoiding polymer deposition is shown, which is different from the first embodiment and the second embodiment in that: in the present embodiment, an annular channel 133c and a through hole 133d connected to the annular channel 133c are formed in an inner region of the spacer ring 133, the annular channel 133c is formed on at least one of opposite surfaces of the inner spacer ring 133a and the outer spacer ring 133b, the through hole 133d is connected to the annular channel 133c in a vertical direction and a lifting device 139 having a pipe provided therein is connected to the lifting device 139 and the charging circulation device outside the reaction chamber 100. The charging circulation device may evacuate the annular channel 133c through a lifting device 139 provided with a pipe and a through hole 133 d. The filling circulation device may circulate and fill the heating gas or the heating liquid in the annular passage 133c through the elevating device 139 provided with a pipe and the through hole 133 d. When the annular channel 133c is evacuated, the annular channel 133c greatly reduces the heat transfer from the inner spacer ring 133a to the outer spacer ring 133b, and when the thermal power from the same plasma energy is applied to the spacer ring 133, the temperature of the inner spacer ring 133a is rapidly increased to 120 degrees celsius and above, thereby achieving the effect of suppressing the generation of polymer. When the annular channel 133c is filled with a heating gas or a heating liquid, such as high-pressure hot nitrogen, the isolation ring 133 is heated to 120 degrees celsius or more rapidly under the dual heating effect of the plasma energy and the high-temperature hot nitrogen, thereby suppressing the generation of polymer. Of course, in this embodiment, the annular channel 133c may be vacuumized and sealed during the process of forming the isolation ring 133 with the annular channel 133c, so that the same effect can be achieved without communicating with the charging circulation device through the lifting device with the pipe for vacuuming during the subsequent plasma etching process.
Referring to fig. 6, a fourth embodiment for avoiding polymer deposition is shown, which is different from the third embodiment in that: the annular passage 143c is formed in the spacer 143 in accordance with embodiment 3, but in addition, the spacer 143 is provided with a filling port 143d and a drawing port 143e, the filling port 143d and the drawing port 143e are respectively connected to the annular passage 143c, and the filling port 143d and the drawing port 143e are vacuumized in the annular passage 143c by a pipe separately provided in the reaction chamber 100, or the annular passage 143c is filled with a heating gas or a heating liquid involved in heating, which can achieve the effects in accordance with other embodiments.
It should be noted that the shape of the annular channel, the positions of the filling port and the pumping port are not limited to the shapes shown in fig. 4 to 6, and any channel dug inside the isolating ring for achieving the effect of the present application is included in the present application.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (20)
1. An isolating ring with a temperature maintaining device is arranged in a plasma processing device, the plasma processing device comprises a reaction cavity surrounded by a plurality of walls, a gas spray head for introducing gas into the reaction cavity is arranged at the upper part of the reaction cavity, a base for bearing a substrate is arranged at the lower part of the reaction cavity, plasma for processing the substrate is formed between the gas spray head and the base, a plasma confinement ring is arranged around the base,
A grounding ring is arranged below the plasma confinement ring and used for providing electric field shielding to avoid plasma leakage; the isolating ring surrounds the gas spraying head and limits the plasma in a wall body arranged on the isolating ring, the inner side of the isolating ring is provided with a downward inclined guide surface so that the gas flows downwards through the plasma restraining ring, the isolating ring comprises an inner isolating ring close to the plasma and an outer isolating ring surrounding the inner isolating ring, a temperature maintaining device is arranged between the inner isolating ring and the outer isolating ring, heat of the inner isolating ring is reduced to be transmitted to the outer isolating ring, and the temperature of the inner isolating ring is maintained so as to prevent polymers from being deposited on the surface of the inner isolating ring.
2. The spacer ring of claim 1, wherein: the temperature maintaining device is a heat insulating coating, and the heat insulating coating is arranged between the inner isolating ring and the outer isolating ring.
3. The spacer ring of claim 2, wherein: the thermal barrier coating is applied to at least one of the opposed surfaces of the inner and outer spacer rings.
4. The spacer ring of claim 2, wherein: at least one of the opposite surfaces of the inner isolating ring and the outer isolating ring is concavely provided with a groove, and the heat-insulating coating is coated in the groove.
5. The spacer ring of claim 4, wherein: the thickness of the thermal insulation coating is 0.5mm to 1mm, and the depth of the groove is greater than 0.5mm.
6. The spacer ring of claim 2, wherein: the thermal insulation coating is mainly formed by nano hollow ceramic microbeads.
7. The spacer ring of claim 1, wherein: the temperature maintaining device is an annular channel internally vacuum or internally filled with heating gas or heating liquid.
8. The spacer ring of claim 7, wherein: the annular channel is formed in the inner area of the isolating ring, and at least one of the surfaces of the inner isolating ring opposite to the outer isolating ring is dug to form the annular channel.
9. The spacer ring of claim 8, wherein: the annular channel is vacuumized and sealed in the process of forming the annular channel.
10. The spacer ring of claim 8, wherein: the isolating ring is connected and arranged in the reaction cavity by a lifting device with a pipeline inside, a through hole for communicating the annular channel with the pipeline is formed in the isolating ring, and the pipeline is used for vacuumizing the annular channel.
11. The spacer ring of claim 7, wherein: the isolating ring is connected and arranged in the reaction cavity by a lifting device with a pipeline inside, a through hole for communicating the annular channel with the pipeline is arranged on the isolating ring, and the pipeline is used for circularly filling the annular channel with the heating gas or the heating liquid.
12. The spacer ring of claim 7, wherein: the annular channel is filled with high-pressure hot nitrogen.
13. The spacer ring of claim 7, wherein: the isolating ring is provided with a filling port and a drawing port which are communicated with the annular channel, and the filling port and the drawing port are used for filling or drawing the heating gas or the heating liquid into or out of the annular channel through a pipeline which is communicated with the reaction cavity.
14. The spacer ring of claim 1, wherein: the outer spacer ring is made of fused silica material.
15. The spacer ring of claim 1, wherein: the inner spacer ring is made of fused silica material, monocrystalline silicon material or silicon carbide material.
16. The spacer ring of claim 1, wherein: the volume of the outer isolating ring accounts for 65% -92% of the whole volume of the isolating ring, and the volume of the inner isolating ring accounts for 8% -35% of the whole volume of the isolating ring.
17. The spacer ring of claim 1, wherein: the heat capacity of the outer isolating ring accounts for 65% -92% of the whole heat capacity of the isolating ring, and the heat capacity of the inner isolating ring accounts for 8% -35% of the whole heat capacity of the isolating ring.
18. The spacer ring of claim 1, wherein: the mass of the outer isolating ring accounts for 65-92% of the total mass of the isolating ring, and the mass of the inner isolating ring accounts for 8-35% of the total mass of the isolating ring.
19. The spacer ring of claim 1, wherein: the inner isolating ring and the outer isolating ring are formed into a whole through fusion welding or bolting.
20. A plasma processing apparatus, comprising:
a reaction chamber surrounded by a plurality of walls;
the gas spray head is arranged in the reaction cavity and is used for introducing gas into the reaction cavity;
the base is arranged in the reaction cavity and used for bearing a substrate, and plasma for processing the substrate is formed between the gas spray head and the base;
A spacer ring surrounding the gas showerhead and confining a plasma, the spacer ring having the features of any one of claims 1 to 19.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911106901.8A CN112802729B (en) | 2019-11-13 | 2019-11-13 | Isolating ring with temperature maintaining device |
| TW109134407A TWI800756B (en) | 2019-11-13 | 2020-10-05 | Isolation ring with temperature maintenance device and plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911106901.8A CN112802729B (en) | 2019-11-13 | 2019-11-13 | Isolating ring with temperature maintaining device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112802729A CN112802729A (en) | 2021-05-14 |
| CN112802729B true CN112802729B (en) | 2024-05-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911106901.8A Active CN112802729B (en) | 2019-11-13 | 2019-11-13 | Isolating ring with temperature maintaining device |
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| KR20060005560A (en) * | 2004-07-13 | 2006-01-18 | 삼성전자주식회사 | Apparatus for fabricating semiconductor device using plasma |
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| CN102027574B (en) * | 2008-02-08 | 2014-09-10 | 朗姆研究公司 | A protective coating for a plasma processing chamber part and a method of use |
| CN104299874B (en) * | 2013-07-17 | 2017-10-20 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus |
| JP6890085B2 (en) * | 2017-11-30 | 2021-06-18 | 東京エレクトロン株式会社 | Board processing equipment |
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| CN102867726A (en) * | 2005-03-18 | 2013-01-09 | 兰姆研究公司 | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| TW200939906A (en) * | 2008-03-14 | 2009-09-16 | Sumitomo Precision Prod Co | Plasma processor |
| CN104051210A (en) * | 2013-03-12 | 2014-09-17 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus capable of reducing gate effect |
| CN106898534A (en) * | 2015-12-21 | 2017-06-27 | 中微半导体设备(上海)有限公司 | Plasma confinement ring, plasma processing apparatus and processing method for substrate |
| CN109961999A (en) * | 2017-12-22 | 2019-07-02 | 中微半导体设备(上海)股份有限公司 | A kind of gas spray and the method for preventing accumulation of polymer |
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| TWI800756B (en) | 2023-05-01 |
| CN112802729A (en) | 2021-05-14 |
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