200939906 六、發明說明： 【發明所屬之技術領域】 杰當ί發'月^關於一種對處理腔室内供給規定之處理氣體形 水’亚猎經電漿化之處理氣體來對配置於處理腔室内 基板進行處理的電漿處理裝置。 【先前技術】 先前，作為上述電漿處理裝置，已知有例如日本專利 2003-124202號公報中所揭+ 土 . ’ ❹ 理腔室；配置於處處理裝置中包括：處 保躲靜電讀上的錢冷卻之第1冷卻ί 至/♦理二二=供給處理氣體之氣趙供給機構；用於使供給 _形成電m之電襞生成機構；對電漿生 高頻電源;以與處理肢室内表面隔開規 ==置於處理腔室内之遮罩;以及冷卻遮罩之第2 帖元 〇 干k入罝伽·電流之直流電源構成，蕻由首户 流Γ至料帖71件中，使該料帖元件之2 役下降’糟此冷卻遮罩。 腔室=二類理裝置中’由氣體供給機構供給至處理 生成由利用高頻電源施加有高頻電磨之電漿 行而對由靜電吸盤吸附、保持之基板進 埶旦而4 Τ 土反將叉到所生成之電漿的熱量、或因電漿之 Ϊ里加熱’但藉由第1冷卻機構而使基板得以冷 猎由第2冷卻機構而使遮罩得以冷卻，從而可防止基板 200939906 /皿度上升藉此’可防止形成於基板上之耐熱性較弱之膜（例 如光阻膜）等受到損傷。 /人，進彳了電輯理時，遮罩之内表面附著有例如因碳氟 化5物《#((:吻氣體）之電航而生成之聚合物等各種生 成物該附著物會縣粒子㈣著於作為處理對象之基板上， 故而，需要定期清洗遮罩來除去附著物。 e 上述生成物之附著量會根據遮罩之溫 ，乎不會附著，而溫度較低時則附著量較多。^ ㈣㈣之魏化合物氣體㈣域定流量 Τ右遮罩内表面上附著之聚合物較多，則 而沈積之聚合物會減少，^L ^保覆膜 相反，右遮罩内表面上附著之聚合物 b，則基板上作為賴朗沈積之聚合物會增多。而且 ’難糾μ高效地進行基板處 量而後之固定時間内’會因所生成之電漿熱 使遮罩>皿度上升，故而，遮罩溫度並非固定，因此，聚合 物之沈積量亦不©定，故無法穩定地實施電漿處理。 故而，亦實施如下處理，例如於電漿處理裝置中設置對遮 理門：ΐ熱^^熱為’以代替上述第2冷卻機構，且於電_ 該加翻預先_罩進行加熱，使其溫度提前 [專利文獻1]日本專利特開2003-124202號公報 【發明内容】 [發明所欲解決之問題] =而’上士述遮罩之清洗侧如錢規定之清洗液或純水來 丁、’此k，使遮罩浸潰於清洗液或純水中。因此，對於遮 200939906 罩上安裳有站耳帖元件或加執 理裝置而言，清洗時必須卸下，上°。^零件之上述先前之電漿處 存在以下問題：零件零件，故非常麻煩。而且， 轉時間縮短。 而化費較長之維護時間，或裝置之運 允本發明係馨於以上情況研製而成者， _ _處理㈣進一種 [解決問題之技術手段] 1之電水處理裝置。 括· 上且 1 目的之本發明係—種電漿處理裝置，1包 狀部，該環狀部之内I間且其—部分具有環 供給至上述處理腔室内之處理氣體形成:使 對上述電漿生賴_加高縣壓；祕機構， 室之=部外周面進行加熱；該電漿處理=之^處於理腔 上述加熱機構包括： 、 板體’由具有彈性之板狀部件構成，且配 述環狀部之外周面隔開間隔； ’、 支撐體’配餘上述板體之與上述環狀部術目反之一側， 且於上述板體側具有固著該板體之邊緣部的固著面； 發熱體，設於上述板體上；及 ， 加麗流體供給機構，供給加壓流體；且 〜上述板體之邊緣部，以使上述板體與上述支撐體之間 氣密空間的方式而固著於上述固著面上；及 上述加壓流體供給機構，對上述氣密空間内供給加壓流 體’使上述板體隆起抵接於上述環狀部側。 根據本發明，若由加壓流體供給機構對板體與支撐體之間 200939906 的氣密空間内供給加壓流體，則板體會產生彈性變形而向處理 腔室之環狀部侧隆起。藉此，板體或者發熱體將與環狀部抵 接’環狀部藉由發熱體被直接加熱、或者經由板體被間接加 熱’從而使環狀部、亦即處理腔室上升至規定溫度。再者，上 述板體與環狀部之間的間隔設定為板體隆起時能盘環壯姑 接。而且，上述加熱可僅於電漿處理開始前實施，亦可自電漿 處理開始前實施且於電漿處理開始後亦繼續實施，且亦可自電 漿處理開始後實施，處理腔室之加熱控制態樣並益 而且，由氣體供給機構供給至處理腔室内之處藉 由利用電壓施加機構施加高頻電壓之電漿生成機構而形成電 衆，且藉由經電漿化之處理氣體，來對適時搬入至處理腔室内 之基板（例如石夕基板或玻璃基板等）進行處理（例如钱刻處理、 灰化處理以及細處理等）。再者，會目電料理岐處理腔 室之内表面上附著各種生成物。 繼而，當對處理腔室之環狀部等進行清洗0夺， 體供給機餅幼作，難錢會随㈣來之剔 ς 板體或者發熱«於麟環㈣，故而，易 内之處理腔室進行賴。 ⑴抑狀#在 如此般，根據本發明之電漿處理裝置，由於 而使設有發熱體之板體隆起，並使板體或 時無須騎任何料，因此行清洗 可防止該電聚處理裝置之運間進行清洗作業’或 班而且於利職體之彈性變形而使板體 於裱狀部，_，無論觀部外 u抵接 或者發蝴轉狀部料〜⑺綠如何，均可使板體 ，、衣狀“者’從而可高效地對環狀部進行加熱。 7 200939906 述環狀部之成為環狀，且以包圍上 上述支稽體内側，且以隔開間隔的方式配置於 撐體之内周面。/成“n方式而©著於該支 著環室之環狀部高效進行加熱。而且，可隨 體與環狀部㈣，㈣提高雜叙純效y驗體或者發熱 行力可不輯獅室之環狀料周面進 而疋對％狀部内周面進行加熱。 此般村㈣树紐轉性續脂構成。如 彈性變# ^由供給至氣密空間内之加壓流體而產生 ’而且’能防止因發熱體發熱而使板體受到損傷。 察時呈=上!=部可於平面觀察時呈圓形，亦可於平面觀 乂亚…、特別限制。而且，上述發熱體可泸入 脂材表面或背面。而且，構成上述板體之樹 ίίί==:而作為其具體例，可列舉例如氟橡膠、或石; [發明之效果] _=室=明之電漿處理裝置’可簡單地於短時 【實施方式】 以下，參照隨附圖式對本發明之具體實施形態進行說明。 ，圖1為表示本發明一實施形態之蝕刻裝置之概略構成的 200939906 剖面圖 圖頭Α·Α方向上之剖面圖。 如圖1及圖2所示，本例中作為電裝處 1中包括以下等構件：處理腔室u，具有:复之蝕刻裝置 自由升降地配設於處理腔室11内， 〇工間’基台15 ’ 基w 18，使基…象切 腔室η内之壓力賴；氣體供給裝置23，對處置理= 吏處理 供給處理氣體；線圈（電漿生成機構）26，配:至11内 Ο Ο ，頻電源28 ’對基台15施加高頻電壓;員】壓，J 處理腔室η進行加熱；控制裝置（未圖示），料，30 ’對 排氣裝置20、氣體供給裝置23、線圈用高頻電源2降7乳=、 向頻電源28以及加熱裝置30之動作進行控制❶ 基口用 上述處雜室U脑具有相互㈣之邮 盗12以及上部容器13構成，上部容 二备 ，下部容器12以及上部容器13之侧 =圓形之環狀部件12a、13a構成。下部容器^之側壁二 兮。Η牛12a)上形成有肋搬人或搬出魏^之開 2衣 ”⑽由播板14進行開閉。再者，上部容器13藉二 成？％狀部件lh下端之凸緣部nb與安裝於下部容器g ' 之環狀固定部件12c卡合而固定。 ° 、上述基台15由上下配置之上部件16以及下部件17 ^上部件16上載置树基板κ，下部件η中連接有上述 降氣紅18。 ☆。上述排氣裝置2〇由排氣泵21、及連接排氣泵21與下部 各器12之排氣管22構成，且藉由排氣泵21並經由排氣管22 而排出下部容器12内之氣體，使處理腔室u内部減壓至規定 9 200939906 壓力。 认_上述氣體供給裝置23由處理氣體供給部24及處理氣體供 給=25麟成’ 1 續理纽供給部％供給作為處理氣體之钱 ，風體（/物SF6氣體）以及㈤侧層形成氣體（例如C4F8 β處理^^供給管25連接處理氣體供給部24與上部 谷器I3之頂壁部’且，自處理氣體供 Μ、經 給管25對卜立κ六- 、土礼泡丨’、 。各裔13内供給蝕刻氣體以及耐蝕刻層形成氣200939906 VI. Description of the invention: [Technical field of invention] Jadang 发 ' 月 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于A plasma processing apparatus for processing a substrate. [Prior Art] Conventionally, as the above-described plasma processing apparatus, for example, the invention has been disclosed in Japanese Patent No. 2003-124202, and the processing chamber includes: The first cooling of the money cooling ί to / ♦ 二 二 二 = supply of gas to the processing gas supply mechanism; for the supply _ to form the electric 襞 generating mechanism; for the plasma to generate high frequency power; The indoor surface is separated by the gauge == the mask placed in the processing chamber; and the second element of the cooling mask is made up of the DC power supply of the sag and current, and the first household flows to the 71 pieces. , so that the 2 element of the material is lowered, which is a cooling mask. In the chamber=second-class device, 'supply from the gas supply mechanism to the process generates a plasma row that is applied with a high-frequency electric grinder by a high-frequency power source, and the substrate that is adsorbed and held by the electrostatic chuck is immersed in the substrate. The heat is transferred to the generated plasma or heated in the plasma. However, the substrate is cooled by the first cooling mechanism, and the mask is cooled by the second cooling mechanism, thereby preventing the substrate 200939906. The increase in the degree of the dish prevents damage to the film (for example, a photoresist film) which is weak in heat resistance formed on the substrate. / Person, when entering the electrical assembly, various materials such as a polymer generated by the fluorocarbon 5 "((: kiss gas) electric current) are attached to the inner surface of the mask. Since the particles (4) are placed on the substrate to be processed, it is necessary to periodically clean the mask to remove the deposits. e The adhesion amount of the above-mentioned product is not adhered according to the temperature of the mask, and the adhesion amount is low when the temperature is low. More. ^ (4) (4) Wei compound gas (4) domain constant flow Τ There are more polymers attached to the inner surface of the right mask, then the deposited polymer will decrease, and the coating will be reversed on the inner surface of the right mask. When the polymer b is attached, the polymer deposited on the substrate as a lyon is increased. Moreover, it is difficult to correct the amount of the substrate and then the substrate is fixed, and the mask is heated by the generated plasma heat. Since the degree of the mask is not fixed, the deposition amount of the polymer is not fixed, so that the plasma treatment cannot be stably performed. Therefore, the following treatment is also performed, for example, the masking is provided in the plasma processing apparatus. Door: hot ^^ heat is 'in lieu of In the second cooling mechanism, the heating is performed in advance, and the temperature is advanced in advance. [Patent Document 1] Japanese Patent Laid-Open No. 2003-124202 [Summary of the Invention] [Problems to be Solved by the Invention] 'The cleaning side of the sergeant's mask is as clean as the cleaning liquid or pure water, 'this k, so that the mask is immersed in the cleaning liquid or pure water. Therefore, for the 200939906 cover, Anshang has a standing ear. For the component or the handling device, it must be removed during cleaning. The above-mentioned previous plasma of the part has the following problems: the parts are very troublesome. Moreover, the turning time is shortened. The maintenance time, or the operation of the device, the invention is developed in the above situation, _ _ processing (four) into a [solution to the technical means] 1 electric water treatment device. a plasma processing apparatus, a bag-shaped portion, and a portion of the annular portion having a process gas formed by a ring supplied to the processing chamber: forming a plasma pressure on the plasma The secret mechanism, the room = the outer surface of the part is heated; The slurry treatment=in the cavity is as follows: The plate body 'is composed of a plate member having elasticity, and the outer peripheral surface of the annular portion is spaced apart; ', the support body is reserved for the plate body a side opposite to the side of the annular portion, and having a fixing surface for fixing an edge portion of the plate body on the side of the plate body; a heating element provided on the plate body; and a flow supply mechanism of the Garlic supply a pressurized fluid; and an edge portion of the plate body is fixed to the fixing surface so as to have an airtight space between the plate body and the support body; and the pressurized fluid supply mechanism is for the gas The pressurized fluid is supplied into the dense space to cause the plate body to swell against the annular portion side. According to the present invention, when the pressurized fluid supply mechanism supplies pressure to the airtight space between the plate body and the support body 200939906 In the case of the fluid, the plate body is elastically deformed to bulge toward the annular portion side of the processing chamber. Thereby, the plate body or the heat generating body abuts against the annular portion. The annular portion is directly heated by the heating element or indirectly heated via the plate body, thereby raising the annular portion, that is, the processing chamber to a predetermined temperature. . Further, the interval between the plate body and the annular portion is set such that the disk ring can be sturdy when the plate body is raised. Moreover, the heating may be performed only before the start of the plasma treatment, or may be performed before the start of the plasma treatment and continue after the start of the plasma treatment, and may also be performed after the start of the plasma treatment, and the heating of the processing chamber The control aspect is also beneficial, and the gas supply mechanism supplies the plasma generating mechanism to the plasma generating mechanism by applying a high-frequency voltage to the plasma generating mechanism, and the plasma is processed by the plasma. The substrate (for example, a stone substrate, a glass substrate, or the like) that is carried into the processing chamber at a proper time is processed (for example, a money etching process, an ashing process, a fine process, etc.). Further, various products are attached to the inner surface of the processing chamber. Then, when cleaning the annular portion of the processing chamber, etc., the body is supplied with the cake, and the money will follow the (4) to pick up the plate or the heat «Yu Linhuan (4), therefore, the processing chamber of the interior Room to go. (1) Inhibition # In this manner, according to the plasma processing apparatus of the present invention, since the plate body provided with the heat generating body is swelled and the plate body does not need to ride any material, the cleaning can prevent the electropolymerization processing device. In the transportation room, the cleaning operation is performed or the class is elastically deformed to facilitate the deformation of the body to make the plate body in the beak, _, regardless of the view of the u, or the butterfly to turn the material ~ (7) green, can make The plate body and the garment-like "body" can efficiently heat the annular portion. 7 200939906 The annular portion is formed in a ring shape and is disposed on the inner side of the above-mentioned branch body at intervals The inner peripheral surface of the support is heated in an "annular manner" by the annular portion of the support ring chamber. Moreover, the body and the ring portion (4), (4) can improve the purity of the hybrid y test body or the heat generation force can not be used to the inner surface of the ring portion of the lion chamber to heat the inner peripheral surface of the % portion. This kind of village (four) tree-turned remnant fat composition. If the elastic change #^ is generated by the pressurized fluid supplied into the airtight space, 'and' can prevent the plate body from being damaged by the heat generated by the heat generating body. When the inspection is performed, the upper part can be rounded in the plane view, or it can be viewed from the plane view. Further, the above-mentioned heat generating body can be inserted into the surface or the back surface of the fat material. Further, the tree constituting the above-mentioned board body is ί : 而 而 而 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 氟 室 室 室 室 室 室 室 室 室 室 明 明 明 明 明 明 明 明 明 明 明MODE FOR CARRYING OUT THE INVENTION Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a cross-sectional view showing a schematic configuration of an etching apparatus according to an embodiment of the present invention, in the direction of the head Α·Α. As shown in FIG. 1 and FIG. 2, in the present embodiment, the electrical component 1 includes the following components: the processing chamber u has a plurality of etching devices disposed in the processing chamber 11 freely and erectably, and the labor chamber' The base 15 'base w 18 is such that the base is like the pressure in the chamber η; the gas supply device 23 supplies the processing gas to the treatment processing; the coil (plasma generating mechanism) 26, with: 11 Ο Ο, the frequency power supply 28' applies a high-frequency voltage to the base 15; the member presses, the J processing chamber η is heated; the control device (not shown), the material, 30' to the exhaust device 20, the gas supply device 23 The high-frequency power supply 2 for the coil is lowered by 7 milk, and the operation of the frequency power source 28 and the heating device 30 is controlled. The base port is composed of the mail thief 12 and the upper container 13 of the (4) compartment. The lower container 12 and the side of the upper container 13 are formed by round annular members 12a and 13a. The side wall of the lower container ^ is 二. The yak 12a) is formed with ribs to move or unload the Wei 2 open garment 2" (10) is opened and closed by the broadcast plate 14. Further, the upper container 13 is attached to the flange portion nb of the lower end of the %-shaped member lh and attached thereto. The annular fixing member 12c of the lower container g' is engaged and fixed. °, the base 15 is placed on the upper and lower members 16 and the lower member 17 and the upper member 16 is placed on the tree substrate κ, and the lower member η is connected to the lower portion η. Air red 18. ☆ The exhaust device 2 is composed of an exhaust pump 21 and an exhaust pipe 22 connecting the exhaust pump 21 and the lower unit 12, and is exhausted by the exhaust pump 21 and via the exhaust pipe 22. The gas in the lower container 12 is discharged, and the inside of the processing chamber u is depressurized to a predetermined pressure of 9 200939906. The gas supply device 23 is supplied by the processing gas supply unit 24 and the processing gas supply = 25 lincheng' 1 continuation of the new supply unit % is supplied as the processing gas, the wind body (/SF SF6 gas), and (5) the side layer forming gas (for example, the C4F8 β treatment supply pipe 25 is connected to the processing gas supply unit 24 and the top wall portion of the upper barn I3), The self-treatment gas is supplied to the sputum, and the pipe is supplied to the tube 25 to the blister -6-, and the earth ritual bubble 丨. Each of the 13 people supplies etching gas and an etching resistant layer to form gas
上述線圈26形成為旋满狀，配設於上部容器13之頂板上 線^高㈣源27麟® %施加高觀壓，藉此使 。谷盗 内形成磁場，並利用由該磁場而感應產生之電 供給至上部容11 13内之鮮i氣體以及_刻層形成氣 ^ 。上述基台用高頻電源28對基台15施加高頻電 ^ ’藉此使基台15與所生成之電漿之間產生電位差（偏壓電The coil 26 is formed in a spiral shape, and is disposed on the top plate of the upper container 13 by a line high (four) source 27 Lin® % to apply a high pressure, thereby making it. A magnetic field is formed in the valley thief, and the electricity induced by the magnetic field is supplied to the fresh gas in the upper portion 11 13 and the etched layer forming gas ^. The above-mentioned base station applies a high frequency electric power to the base 15 by the high frequency power supply 28, thereby generating a potential difference (bias voltage) between the base 15 and the generated plasma.
上述加熱駭30係對上部容器13之側壁（環狀部件 之外周面進行加熱者，包括：環狀板體^以及支擇體义、八 上了方向以雙重構造配置於環狀部件13a之外側；發熱體’ ^ 圖不）’嵌入至板體31内；發熱體用電源（未圖示），、$ 流入至發熱體（未圖示）中；壓縮空氣供給裝置33， 川 Μ與支撐體32之間供給壓縮空氣；以及，溫度檢測感測 圖示），檢測環狀部件之溫度。 、^ 上述板體31由具有耐熱性以及彈性之樹脂（例如& 膠、矽橡膠等耐熱橡膠）構成，以内周面與環狀部件13a氟橡 周面隔開間隔的方式配置於支撐體32内側，且以使板體外 支撐體32之間形成氣雄、空間S之方式（參照圖3及圖* )'、 10 200939906 • m1以及下部固著於該切體32之内周面上。再 及㈣、可不由上述耐熱橡膠構成，而由具有耐埶性以 樹ΐ材料構^脂、合成翻旨、天然橡膠以及合成橡膠等各種 成。而且’板體31與環狀部件13&之_ 疋成板體31隆起後能抵接於環狀部件仏。 叹 上述支禮體32且右白冰田& | -，且下端安裝於上;固有=^^^ ❿ 成。上述>皿度檢測感測器（未圖示）由例如嵌人 =内之熱電偶構成’將經檢測之溫度發送至控職置（糊 及連接給裝置33由供給壓縮空氣之壓縮機34、 及連接壓細機34與支樓體32之供給孔3The heating crucible 30 is a side wall of the upper container 13 (the outer surface of the annular member is heated, and includes an annular plate body and a support body, and is disposed in a double structure on the outer side of the annular member 13a. The heating element '^ Fig.' is not embedded in the plate body 31; the heating element is supplied with a power source (not shown), and flows into the heating element (not shown); the compressed air supply device 33, the Chuanxiong and the support body The compressed air is supplied between 32; and the temperature detection sensing is shown), and the temperature of the annular member is detected. The plate body 31 is made of a heat-resistant and elastic resin (for example, a heat-resistant rubber such as a rubber or a rubber), and is disposed on the support body 32 with an inner circumferential surface spaced apart from the annular rubber member 13a. The inner side is fixed to the inner circumferential surface of the cutting body 32 so that the air-bearing body and the space S are formed between the outer-plate support bodies 32 (see FIGS. 3 and FIG. 4), 10 200939906, m1, and the lower portion. Further, (4), it may be composed of the above-mentioned heat-resistant rubber, and may be made of various materials such as a sap resistance, a tree ΐ material, a synthetic material, a natural rubber, and a synthetic rubber. Further, the plate body 31 and the annular member 13&> are formed so that the plate body 31 can be abutted against the annular member. Sigh the above-mentioned ritual body 32 and right white ice field & | -, and the lower end is installed on the upper; inherent = ^ ^ ^ ❿ into. The above > degree detecting sensor (not shown) is constituted by, for example, a thermocouple embedded in the 'input = the temperature sent to the control position (the paste and the connection device 33 are supplied to the compressor 34 for supplying compressed air) And the supply hole 3 connecting the press 34 and the branch body 32
35自壓縮機34經讀社氣供給管35以及供tr32a 而將壓縮空氣供給至氣密空間s内。 WO ，據該加熱裝置30，若藉由發熱體用電源（未圖示）使 f =發熱體（未圖示），則發熱體（未圖示 而^右自壓縮空氣供給裝置33對 : 的氣密_内供給壓縮空氣，_ 3及圖4所示= 31會產生彈性變形而向環狀部件m侧隆起。藉此，板^ ===?ra_= 得環狀部件73a之加熱停ΐ來之形狀’脫離環狀部件⑶，使 氣體置』升降氣缸18、_置2。、 圈用冋頻電源27、基台用高頻電源28以 200939906 及加熱裝置30之動作進行控制。具體而言，反覆交替執彳_ 刻步驟與耐_層形成步驟，該侧步财藉由線圈用高^ 〇 ，27以及基台用高頻電源28分別對線圈26以及基台15 ^ : 高頻電壓’自處理氣體供給部％中對處理腔室η 0供給= 氣體，並由排氣泵21對處理腔室u内施加規定壓力，該二 刻層形成步驟巾藉由線關高頻電源2?對線圈26施加 壓，自處理氣體供給部24對處理腔室u内供給耐飯刻= 氣體’並由排氣泵21對處理腔室U 0施加規定壓力。”戍 而且，控制裝置（未圖示）於處理腔室u進行加熱萨 ^由發熱體用電源（未圖示）使電流流人至發熱體（未圖= =，並且自壓縮空氣供給裝置33對氣密空間s内供給外 乳，使板體31抵接於環狀部件13a之外周面而對其進行加< 此時’根據溫度檢測感測器（未圖示）獲得之檢測溫度[、。 =體用電源（未圖示）流至發熱體（未圖示）的電流值= 從而對發熱體（未圖示）之發熱量 : 部件Ba (處理腔室U)處於規定之溫度範圍内。使碌 根據以上述方式構成之本例之侧裝置i，例如，藉 ❹ 3 對處理腔室11加熱而使其升溫至規^溫度之i，^ 覆父替實施上述_步驟與耐_層形成步驟。 夂 盘功Γΐ ί驟係使⑽氣體形成電漿，並藉由電漿中之自由基 生#Γ學反應’或者電漿中之離子#由偏壓電位而ΐ ::15一侧移動且與石夕基板Μ生碰撞，而使石夕基受至= 1將蚀耐侧層形成步驟係使耐㈣層形成氣體形成 =面之自域所生紅衫物沈積树基板κ 乂 (藉由蝕刻而形成之槽或孔的側壁以及底面等），從而 12 200939906 -刻。 腔室11的電5處理’則包含環狀部件13a之處理 液或純水對處理腔室言成，:故而須定期使用清洗 11，但加埶穿W3f)*dl：+月冼此打，必須分解處理腔室 自處理腔室=:;r置= 腔室11内，故而無須 腔室11。 ，、、、裝置30之作業，故可易於維護處理 歲入發埶體之烟裝置1 ’由於藉由壓縮空氣而使 狀部件13a，隆起’使街趙31抵接於環 狀部件1¼ #進行产夺二熱’故而’當對處理腔室11之環 能夠易於短咖u裝卸加熱裝置3G之零件，因此 轉時間_。3 Π洗作業，或者防止該侧裝置1之運 狀部侔由於利用板體31之彈性變形而使板體31抵接於環 產生之^眩故而’此夠吸收伴隨環狀料13a^溫度變化而 使板體31與環狀部件13a密著，故可高效地 而進仃加熱。而且，因板體31形成為環狀，故 率^衣，α卩件13a之整個周面進行加熱，因此可提高加熱效 而，Γ且’因板體31纟具有耐熱性以及彈性之樹脂構成，故 味給至氣密空間S内之麼縮空氣使該板體31產 變形，而且，能防止因發熱體（未圖示）發熱使板體 文到損傷。 以上，就本發明之一實施形態進行了說明，但本發明苛採 用之具體態樣並不限於此。 於上述不例中，板體31内嵌入著發熱體（未圖示），但益 13 200939906 不限於此，亦可如圖5及圖6 _ 之多個圓弧狀加熱板36勒附於不，將後人有發熱體（未圖示） 36形成為圓弧狀，以圓狐^體31之内周面。上述加熱板 外周面相對峙的方式，以固内定^隔開間隔與環狀部件以之 方向上。即#如此，甚隔配置於環狀部件13a之圓周 31吝 = '氧赉空間S内供給壓縮空氣，使板體 孤而向環狀部件以侧隆起，則加熱板％之圓 弧内周面會抵接於環狀部件丨 ^ ^ B進行加熱（參照圖7/圖=卜=從^對環狀部件 , Bli . ^ )另一方面，右停止供給壓縮 ❹ ::貝J板體31曰恢復至原來之形狀，加熱板 部件Ua，使環狀部件仏之加熱停止。 哪… 再者，加熱板36亦可並不點附於板體31之内周面，而是 Ά附於板體31之外周面而配置於翁 板36嗖；^胪31 ^岡而 在空間§内。然而，加熱 比設於外周面能夠更直接地抵接 於也P件13a，故而能高效地進行加熱。而且，加埶板％ 亦可為平板狀而非·狀，鱗，較好的是設置更多的加熱板 36 ° * ❹ 士而且，構成上述上部部们3之環狀部件仏於平面觀察 %呈圓形’但於平峨察時呈矩形做之情科，加轨裝置 =如下方式構成。亦即’加練置中主要包鮮述 ^ : 4個板體，配置成分別與環狀部件…之*個侧面（外 3，開間隔；支撐體，由以包圍板體之方式而配置的 =框狀部件構成，且讀板體之間形錢密空間之方式 體之逢緣部固著於框内周面；發熱體’板 壓縮空氣供給裝置，對各氣密空間内供仏壓-±以及， 察時呈矩形形狀’亦與平面觀察時平面觀 丁王_形形狀相同，均能對環 14 200939906 狀部件13a之外周面加熱。 而且’上述加熱裝置3〇亦可絮忐 裝置40。再者，此時上述上部容器13田及圖10所示之加熱 面向下方突出而上表A為其頂壁部中央下表 分之側壁由平面觀3 = 之形狀’該向下方凹陷部 述處理氣體供給管25中上部容1=卩件l3e構成。而且’上 連接至上部容器部呈現分支並分別 ❹ ❹ 且多個線叫並列設』於而上^ 件熱裝置4〇係以能夠對上部容器13之侧壁（環狀部 沪上4方白熱之方式而構成’包括：環狀板體4卜 /σ上下方向配置於環狀部件13c之 方向配置於該板體41之内側务 未牙^^ “内;發熱體用電源(未圖示)’使體電匕圖二 =1½空氣供給裝置43，對板體41與支稽輛π之 氣；以及溫度檢未圖示），檢測環狀部件二 41由具有耐触以及雜彻旨獅，以外周 二衣、° 13C之内周面隔開間隔之方式配置於支撐軸42 貝以使該板體41與支禮轴42之間形成氣密空間S的方 式，=使該板體41之上部以及下部固著於該支撐軸42之外周 ^ ’照圖10)。上述支樓轴42之上端形成有凸緣部仏，該 m2自上侧插入至環狀部件仏内而使該凸緣部仏與 上部容器13之頂板卡合。而且，支撐軸42上形成有於上表面 以及下部外周面開口之供給孔42b。 # .上述壓縮空氣供給裝置43包括··壓縮機糾，供給壓縮空 氣，及壓縮空氣供給管45，連接_機44與支撐車由42之供 15 200939906 給孔42b ’而且’自壓縮機私經由壓縮空氣供給管幻及供給 - 孔42b對氣锆空間s内供給壓縮空氣。 . 該加熱裂置40中’若藉由發熱體用電源（未圖示）使電: 流流入^發熱體（未圖示）中，則發熱體（未圖示）會發熱，： 而且，若自壓縮空氣供給裝置43對板體41與支撐軸似之間 的氣密空間s内供給壓縮空氣’則如圖1〇所示，板體41會產 生?性變形而向雜部件13e侧_。藉此，板體41將二接 於環狀部件13c之内周面，使得環狀部件…藉由發熱體（未 ，示）並纟二由板體41被加熱。另一方面，若停止供給壓縮空 則板體41會恢復至原來之形狀，脫離環狀部件13。，使 ❹ 環狀部件13c之加熱停止。因此，當以上述方式構成加熱裝置 40時，便此對環狀部件13c之内周面加熱。而且，與上述加 熱裝置30相同，均能簡單地於短時間内對處理腔室π進行維 護。 、 、而且’上述示例中’列舉蝕刻處理，作為電漿處理之一例， =並不限於此’灰化處理及成膜處理等中亦可使用本發明之電 漿處理裝置。而且，作為電漿處理對象之基板，並不限於矽基 ，K，亦可為玻璃基板等任一基板。而且，亦可不對上述上ς ❹ 容器13加熱，而對上述下部容器12加熱。而且，上述板體 31、41及支撐體32亦並不限於環狀。 【圖式簡單說明】 圖1為表示本發明一實施形態之蝕刻裝置之概略構成的 剖面圖。 圖2為圖1中箭頭Α_Α方向上的剖面圖。 圖3為表示氣密空間内供給有壓縮空氣時之狀態的剖面 16 200939906 .-圖。 . 圖4為表示氣密空間内供給有壓縮空氣時之狀態的剖面 圖。 * 圖5為表示本發明其他實施形態之蝕刻裝置之概略構成 的剖面圖。 圖6為圖2中箭頭B-B方向上的剖面圖。 圖7為表示氣密空間内供給有壓縮空氣時之狀態的剖面 圖。 @ 圖8為表示氣密空間内供給有壓縮空氣時之狀態的剖面 圖。 圖9為表示本發明其他實施形態之蝕刻裝置之概略構成 的剖面圖。 圖10為表示氣密空間内供給有壓縮空氣時之狀態的剖面 圖。 【主要元件符號說明】 I 蝕刻裝置（電漿處理裝置）The compressed air is supplied from the compressor 34 to the airtight space s via the co-gas supply pipe 35 and the tr32a. According to the heating device 30, if a heating element (not shown) is used to supply f = a heating element (not shown), the heating element (not shown) is controlled by the compressed air supply device 33: The airtight_internal supply of compressed air, _3 and Fig. 4 = 31 will elastically deform and bulge toward the annular member m side. Thereby, the plate ^ ===?ra_= the heating of the annular member 73a is stopped. The shape is 'disengaged from the ring member (3), and the gas is placed on the lift cylinder 18, _2, the ring power supply 27, and the base high frequency power supply 28 are controlled by the operation of the 200939906 and the heating device 30. In other words, the alternating step _ engraving step and the _ layer forming step, the side step by the coil using high ^ 〇, 27 and the base station with the high frequency power supply 28 respectively to the coil 26 and the base 15 ^ : high frequency voltage 'The gas is supplied to the processing chamber η 0 from the processing gas supply unit %, and a predetermined pressure is applied to the processing chamber u by the exhaust pump 21, which is used to turn off the high-frequency power source 2 by the line. Pressure is applied to the coil 26, and the process gas supply unit 24 supplies the rice processing chamber to the inside of the processing chamber u with a gas resistance = gas pair The processing chamber U 0 is applied with a predetermined pressure.” 戍 Further, a control device (not shown) heats the processing chamber u, and the current is supplied to the heating element by a power source (not shown) of the heating element (not shown). =, and the external air is supplied from the compressed air supply device 33 to the inside of the airtight space s, and the plate body 31 is brought into contact with the outer peripheral surface of the annular member 13a to be added thereto. At this time, the sensor is detected according to the temperature ( Not shown) The detected temperature [, = = current value of the body power supply (not shown) flowing to the heating element (not shown) = the amount of heat generated by the heating element (not shown): Part Ba (Processing The chamber U) is in a predetermined temperature range. The side device i of the present example configured as described above is heated, for example, by heating the processing chamber 11 to a temperature of i, ^ The parent performs the above-mentioned steps and the formation of the resistance layer. The process of forming the plasma is made by (10) gas, and by the radical reaction in the plasma, or the ion in the plasma. The bias potential is ΐ:15 side moves and collides with the Shixi substrate, and the Shi Xiji receives ~1 The side layer forming step is such that the formation of the gas is formed by the formation of the gas layer (the surface layer and the bottom surface of the groove or the hole formed by etching). The electric 5 treatment of the chamber 11 includes the treatment liquid or pure water of the annular member 13a, and the cleaning chamber 11 is used. Therefore, the cleaning 11 must be used regularly, but the twisting is performed by W3f) * dl: + It is necessary to decompose the processing chamber from the processing chamber =:; r to be placed in the chamber 11, so that the operation of the chamber 11, the device 30 is not required, so that it is easy to maintain and handle the smoke device 1 ' By the compressed air, the member 13a is raised, so that the street Zhao 31 abuts against the annular member 11⁄4 # to generate the heat, so that the ring to the processing chamber 11 can be easily loaded and unloaded by the heating device 3G. Parts, so turn time _. 3 rinsing operation, or preventing the movement of the side device 1 due to the elastic deformation of the plate body 31, causing the plate body 31 to abut against the ring to cause glare [this is sufficient to absorb the temperature change accompanying the ring material 13a^ Further, since the plate body 31 is adhered to the annular member 13a, heating can be efficiently performed. Further, since the plate body 31 is formed in a ring shape, the entire peripheral surface of the α-clamp 13a is heated, so that the heating effect can be improved, and the resin body having heat resistance and elasticity due to the plate body 31 is formed. Therefore, the air supplied to the airtight space S causes the plate body 31 to be deformed, and the heat generated by the heat generating body (not shown) can be prevented from being damaged. Although an embodiment of the present invention has been described above, the specific aspect of the present invention is not limited thereto. In the above-mentioned example, a heating element (not shown) is embedded in the plate body 31, but the benefit 13 200939906 is not limited thereto, and a plurality of arc-shaped heating plates 36 as shown in FIGS. 5 and 6 may be attached to The latter has a heating element (not shown) 36 formed in an arc shape, and the inner peripheral surface of the round fox body 31 is formed. The outer circumferential surface of the heating plate is opposed to the crucible so as to be spaced apart from the annular member in the direction of the inner portion. That is, in this case, the compressed air is supplied to the circumference 31 吝 = 'the oxygen space S of the annular member 13a, and the plate body is swelled to the side of the annular member, and the inner peripheral surface of the arc of the heating plate % is It will abut on the ring member 丨^^ B for heating (refer to Fig. 7/Fig. = Bu = from ^ to the ring member, Bli. ^). On the other hand, the right stop supply compression ❹ :: Bay J plate 31曰Returning to the original shape, the plate member Ua is heated to stop the heating of the annular member. Further, the heating plate 36 may be attached to the outer peripheral surface of the plate body 31 without being attached to the inner peripheral surface of the plate body 31, and may be disposed on the outer surface of the plate body 31. §Inside. However, the heating can be more directly contacted with the P member 13a than the outer peripheral surface, so that the heating can be performed efficiently. Further, the twisting plate % may be in the form of a flat plate instead of a shape, and it is preferable to provide more heating plates 36 ° * 而且 and the annular members constituting the upper portion 3 are viewed in a plane view % It is a round shape, but it is a rectangular shape when it is flat. The railing device is constructed as follows. That is to say, the main package of the "additional training" is: ^ 4 plates, which are arranged to be respectively with the side of the ring member... (outside 3, open spacing; support body, configured by means of surrounding the plate body) = frame-shaped member, and the shape of the dense space between the reading plates is fixed to the inner peripheral surface of the frame; the heating body 'plate compressed air supply device supplies pressure to each airtight space - ± and, when viewed in a rectangular shape, are also the same as the plan view of the Dingwang _ shape in plan view, and can heat the outer peripheral surface of the ring 14 200939906-shaped member 13a. Moreover, the above-mentioned heating device 3 can also be used for the flocculation device 40. Furthermore, at this time, the upper container 13 and the heating surface shown in FIG. 10 are protruded downward, and the upper surface A is the side wall of the top surface of the top wall portion, and the side wall is defined by the plane view 3 = The upper portion of the processing gas supply pipe 25 is composed of the upper portion 1 = the element l3e, and the upper portion is connected to the upper container portion and the branches are respectively arranged and the plurality of wires are juxtaposed, and the upper device is configured to be capable of The side wall of the upper container 13 (the annular portion of the Shanghai side is white and white The formation includes: the annular plate body 4b/σ is disposed in the direction of the annular member 13c in the direction of the annular member 13c, and is disposed in the inner side of the plate body 41; the heating element power source (not shown) Electric 匕 Figure 2 = 11⁄2 air supply device 43, for the plate body 41 and the qi of the vehicle π; and the temperature check is not shown), the detection of the ring member two 41 by the touch-resistant and miscellaneous lion, outside the Tuesday clothing The inner circumferential surface of the 13C is disposed at a distance from the support shaft 42 so as to form an airtight space S between the plate body 41 and the support shaft 42. The upper portion and the lower portion of the plate body 41 are fixed. The outer periphery of the support shaft 42 is shown in Fig. 10. The upper end of the support shaft 42 is formed with a flange portion 仏, and the m2 is inserted into the annular member 自 from the upper side to make the flange portion and the upper portion The top plate of the container 13 is engaged with each other. Further, the support shaft 42 is formed with a supply hole 42b which is open on the upper surface and the lower outer peripheral surface. #. The compressed air supply device 43 includes a compressor correction, supply of compressed air, and compression. The air supply pipe 45, the connection machine 44 and the support vehicle are supplied by 42 15 200939906 to the hole 42b 'and 'self-pressure The machine supplies compressed air to the zirconia space s via the compressed air supply pipe phantom and supply-hole 42b. The heat-dissipating body 40 is powered by a power source (not shown) for the heating element: In the body (not shown), the heating element (not shown) generates heat, and if compressed air is supplied from the compressed air supply device 43 to the airtight space s between the plate body 41 and the support shaft, As shown in Fig. 1A, the plate body 41 is deformed to the side of the miscellaneous member 13e. Thereby, the plate body 41 is connected to the inner peripheral surface of the annular member 13c so that the annular member ... is heated. The body (not shown) is heated by the plate body 41. On the other hand, when the supply of the compressed space is stopped, the plate body 41 returns to its original shape and is separated from the annular member 13. The heating of the 环状 ring member 13c is stopped. Therefore, when the heating device 40 is constructed as described above, the inner peripheral surface of the annular member 13c is heated. Further, similarly to the above-described heating device 30, the processing chamber π can be easily maintained in a short time. Further, in the above-mentioned example, the etching treatment is exemplified, and as an example of the plasma treatment, the plasma processing apparatus of the present invention can be used without being limited to the "ashing treatment" and the film formation treatment. Further, the substrate to be subjected to the plasma treatment is not limited to the base, K, and may be any substrate such as a glass substrate. Further, the lower container 12 may be heated without heating the upper crucible container 13. Further, the plates 31, 41 and the support 32 are not limited to the ring shape. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a schematic configuration of an etching apparatus according to an embodiment of the present invention. Figure 2 is a cross-sectional view taken in the direction of arrow Α_Α in Figure 1. Fig. 3 is a cross-sectional view showing a state in which compressed air is supplied to the airtight space. Fig. 4 is a cross-sectional view showing a state in which compressed air is supplied into an airtight space. Fig. 5 is a cross-sectional view showing a schematic configuration of an etching apparatus according to another embodiment of the present invention. Figure 6 is a cross-sectional view taken along the line B-B of Figure 2; Fig. 7 is a cross-sectional view showing a state in which compressed air is supplied into an airtight space. @ Figure 8 is a cross-sectional view showing a state in which compressed air is supplied to the airtight space. Fig. 9 is a cross-sectional view showing a schematic configuration of an etching apparatus according to another embodiment of the present invention. Fig. 10 is a cross-sectional view showing a state in which compressed air is supplied into an airtight space. [Main component symbol description] I Etching device (plasma processing device)
II 處理腔室 12 下部容器 13 上部容器 15 基台 20 排氣裝置 23 氣體供給裝置 26 線圈 27 線圈用南頻電源 28 基台用而頻電源 17 200939906 30 加熱裝置 31 板體 32 支撐體 33 壓縮空氣供給裝置 K z夕基板 S 氣密空間II Processing chamber 12 Lower container 13 Upper container 15 Base 20 Exhaust device 23 Gas supply device 26 Coil 27 Coaxial power supply for coil 28 Base frequency and power supply 17 200939906 30 Heating device 31 Plate 32 Support 33 Compressed air Supply device K z 基板 substrate S airtight space
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