TWI570802B - Electrolytic etching device - Google Patents
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- TWI570802B TWI570802B TW103143954A TW103143954A TWI570802B TW I570802 B TWI570802 B TW I570802B TW 103143954 A TW103143954 A TW 103143954A TW 103143954 A TW103143954 A TW 103143954A TW I570802 B TWI570802 B TW I570802B
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Description
本發明涉及半導體加工設備，特別涉及一種電漿體蝕刻裝置。 The present invention relates to a semiconductor processing apparatus, and more particularly to a plasma etching apparatus.
隨著積體電路集成度的提高和元件線寬的減小，電漿體蝕刻(Plasma Etching)工藝得到了極為廣泛的應用。電漿體蝕刻工藝是通過在電漿體蝕刻裝置的反應腔室內配置電極，以蝕刻氣體作為反應氣體提供給反應腔室內，利用在電極上施加射頻而在反應腔室內形成反應氣體的電漿體，通過由該電漿體生成的原子團、離子等完成蝕刻的乾式蝕刻工藝。 As the integration of integrated circuits increases and the line width of components decreases, the Plasma Etching process is widely used. The plasma etching process is performed by disposing an electrode in a reaction chamber of a plasma etching apparatus, supplying an etching gas as a reaction gas to a reaction chamber, and forming a plasma of a reaction gas in the reaction chamber by applying radio frequency to the electrode. A dry etching process in which etching is performed by atomic groups, ions, and the like generated from the plasma.
近年來，利用電漿體蝕刻工藝形成高深寬比結構，如TSV矽通孔技術，正越來越受到廣泛的重視和研究。高深寬比結構的形成，典型地是利用圖形蝕刻製程在晶圓表面形成圖形化的光阻作為光罩層，然後以合適的反應氣體產生電漿體並將其用到未被光罩層保護的蝕刻區域，從而蝕刻出深溝槽。通常來說，在蝕刻出深溝槽之後，還可能會執行不需要光罩層的無圖形蝕刻(blanket etching)製程以對所形成的深溝槽進行減薄最終形成所希望的深度的高深寬比結構。然而，在無圖形蝕刻製程中，由於晶圓的邊緣區域與中間區域蝕刻速率不同，邊緣區域的蝕刻速率偏快，這將造成整個晶圓範圍內各高深寬比結構蝕刻深度、頂部特徵尺寸和底部特徵尺寸的不一致，進而影響產品良率。 而若在不同腔室中分別進行高深寬比結構的圖形蝕刻和無圖形蝕刻，又會造成工藝效率的降低和成本的增加。 In recent years, the use of plasma etching processes to form high aspect ratio structures, such as TSV 矽 through hole technology, is receiving more and more attention and research. The formation of a high aspect ratio structure, typically using a pattern etch process to form a patterned photoresist on the surface of the wafer as a mask layer, then generating a plasma with a suitable reactive gas and applying it to the unmasked layer The etched area is thus etched out of the deep trench. Generally, after etching a deep trench, it is also possible to perform a blanket etching process that does not require a mask layer to thin the formed deep trench to form a high aspect ratio structure of a desired depth. . However, in the patternless etching process, since the etch rate of the edge region and the intermediate region of the wafer is different, the etch rate of the edge region is faster, which causes the etch depth of the high aspect ratio structure, the top feature size, and the entire wafer range. Inconsistent feature sizes at the bottom, which in turn affect product yield. If the high-aspect ratio structure pattern etching and pattern-free etching are performed in different chambers, the process efficiency is reduced and the cost is increased.
為解決上述問題，習知技術中在晶圓周圍設置一遮蔽環，以減小邊緣區域電漿體的轟擊，從而改善無圖形蝕刻時的蝕刻均勻性。如圖1所示，電漿體蝕刻裝置包括反應腔室10，其中引入有蝕刻氣體作為反應氣體；反應腔室10的頂部設置有反應氣體噴淋頭11，其中包含上電極15；反應腔室10底部設置有用於夾持待處理基片W的靜電夾盤12，其中設置有與上電極15相對的下電極16。射頻源RF施加在下電極16上，在上電極15和下電極16之間形成射頻電場，對蝕刻氣體電離生成電漿體。聚焦環13設於基片W的周圍，其頂面與基片W的頂面平齊，用於收斂基片W表面的電漿體。遮蔽環14環繞聚焦環外周設置，用於掩蔽或遮蔽基片周緣處的一部分電漿體以使基片邊緣部分電漿體的密度減小，從而降低晶圓邊緣處的蝕刻速率。 In order to solve the above problem, in the prior art, a shadow ring is disposed around the wafer to reduce the bombardment of the plasma in the edge region, thereby improving the etching uniformity in the case of no pattern etching. As shown in FIG. 1, the plasma etching apparatus includes a reaction chamber 10 into which an etching gas is introduced as a reaction gas; a top portion of the reaction chamber 10 is provided with a reaction gas shower head 11 including an upper electrode 15; a reaction chamber The bottom of the 10 is provided with an electrostatic chuck 12 for holding the substrate W to be processed, in which a lower electrode 16 opposed to the upper electrode 15 is disposed. The RF source RF is applied to the lower electrode 16, and a radio frequency electric field is formed between the upper electrode 15 and the lower electrode 16, and the etching gas is ionized to form a plasma. The focus ring 13 is provided around the substrate W, and its top surface is flush with the top surface of the substrate W for concentrating the plasma on the surface of the substrate W. A shadow ring 14 is disposed around the periphery of the focus ring for masking or shielding a portion of the plasma at the periphery of the substrate to reduce the density of the plasma at the edge portion of the substrate, thereby reducing the etch rate at the edge of the wafer.
然而，採用遮蔽環雖然能夠提高無圖形蝕刻製程中整個基片範圍內的蝕刻均勻性，但遮蔽環也同時影響了邊緣區域的電漿體密度，又會導致圖形蝕刻製程中深溝槽剖面形貌控制不佳。 However, the use of the shadow ring can improve the etching uniformity over the entire substrate in the pattern-free etching process, but the shadow ring also affects the plasma density in the edge region, which in turn leads to the deep trench profile in the pattern etching process. Poor control.
因此，需要提出一種電漿體蝕刻裝置能夠同時改善高深寬比結構形貌控制以及無圖形蝕刻的均勻性。 Therefore, it is desirable to provide a plasma etching apparatus capable of simultaneously improving the high aspect ratio structure topography control and the uniformity of patternless etching.
本發明的主要目的在於克服習知技術的缺陷，提供一種能夠原位執行圖形蝕刻和無圖形蝕刻製程且不影響各蝕刻製程的蝕刻均一性和蝕刻形貌的電漿體蝕刻裝置。 SUMMARY OF THE INVENTION A primary object of the present invention is to overcome the deficiencies of the prior art and to provide a plasma etching apparatus capable of performing pattern etching and patternless etching processes in situ without affecting the etching uniformity and etching morphology of each etching process.
為達成上述目的，本發明提供一種電漿體蝕刻裝置，用於原位執行深溝槽圖形蝕刻製程和無圖形蝕刻製程，其包括反應腔室，其具有用於夾持待處理基片的靜電夾盤以及可移動的環狀遮蔽部件，環狀遮蔽部件設於所述基片外周側並位於所述基片的上方；驅動單元，用於驅動所述環狀遮蔽部件在垂直方向上移動；以及控制單元，與所述驅動單元相連，其在待進行所述深溝槽圖形蝕刻製程時控制所述驅動單元驅動所述環狀遮蔽部件定位於遠離所述基片的第一位置，在待進行所述無圖形蝕刻製程時控制所述驅動單元驅動所述環狀遮蔽部件定位於鄰近所述基片的第二位置。 To achieve the above object, the present invention provides a plasma etching apparatus for performing a deep trench pattern etching process and a patternless etching process in situ, including a reaction chamber having an electrostatic chuck for holding a substrate to be processed a disk and a movable annular shielding member, the annular shielding member is disposed on an outer peripheral side of the substrate and above the substrate; and a driving unit for driving the annular shielding member to move in a vertical direction; a control unit connected to the driving unit, configured to control the driving unit to drive the annular shielding member to be positioned at a first position away from the substrate when the deep trench pattern etching process is to be performed The drive unit is controlled to drive the annular shield member to be positioned adjacent to the second position of the substrate during the patternless etching process.
優選的，所述反應腔室還包括環繞所述基片的聚焦環，所述聚焦環位於環狀遮蔽部件下方。 Preferably, the reaction chamber further includes a focus ring surrounding the substrate, the focus ring being located below the annular shield member.
優選的，所述反應腔室還包括環繞所述聚焦環的覆蓋環，所述覆蓋環位於所述環狀遮蔽部件下方且其上表面與所述聚焦環的上表面平齊。 Preferably, the reaction chamber further includes a cover ring surrounding the focus ring, the cover ring being located below the annular shield member and an upper surface thereof being flush with an upper surface of the focus ring.
優選的，所述環狀遮蔽部件為遮蔽環或氣體導向環。 Preferably, the annular shielding member is a shielding ring or a gas guiding ring.
優選的，所述遮蔽環的內周面為自上向下徑向向外延伸的錐形面。 Preferably, the inner circumferential surface of the shielding ring is a tapered surface extending radially outward from the top to the bottom.
優選的，所述氣體導向環的截面形狀為矩形。 Preferably, the gas guiding ring has a rectangular shape in cross section.
優選的，所述環狀遮蔽部件定位於所述第二位置時，其下表面與所述基片上表面的距離為1~2mm。 Preferably, when the annular shielding member is positioned in the second position, a distance between a lower surface thereof and an upper surface of the substrate is 1 to 2 mm.
優選的，所述遮蔽環定位於所述第一位置時，其下表面與所述基片上表面的距離為15~30mm；所述氣體導向環定位於所述第一位置時，其下表面與所述基片上表面的距離為30~60mm。 Preferably, when the shielding ring is positioned in the first position, a distance between a lower surface thereof and an upper surface of the substrate is 15 to 30 mm; when the gas guiding ring is positioned at the first position, a lower surface thereof is The distance between the upper surface of the substrate is 30 to 60 mm.
優選的，所述環狀遮蔽部件在水準方向上自所述基片的邊緣徑向向內延伸-5mm~5mm。 Preferably, the annular shielding member extends radially inward from the edge of the substrate by -5 mm to 5 mm in the horizontal direction.
優選的，所述聚焦環和所述覆蓋環的上表面突出於所述基片的上表面1~2mm。 Preferably, the focus ring and the upper surface of the cover ring protrude from the upper surface of the substrate by 1 to 2 mm.
優選的，所述環狀遮蔽部件定位於所述第二位置時，其下表面貼合於所述聚焦環和所述覆蓋環的上表面。 Preferably, when the annular shielding member is positioned in the second position, a lower surface thereof is attached to the upper surface of the focus ring and the cover ring.
優選的，所述遮蔽環的材料選自石英或陶瓷，所述氣體導向環的材料選自鋁。 Preferably, the material of the shielding ring is selected from quartz or ceramic, and the material of the gas guiding ring is selected from aluminum.
本發明還提供了一種應用上述電漿體蝕刻裝置的蝕刻方法，所述蝕刻方法包括原位執行深溝槽圖形蝕刻製程和無圖形蝕刻製程，其包括以下步驟：將所述環狀遮蔽部件定位至所述第一位置；進行所述深溝槽圖形蝕刻製程；將所述環狀遮蔽部件定位至所述第二位置；以及進行所述無圖形蝕刻製程。 The present invention also provides an etching method using the above-described plasma etching apparatus, the etching method comprising performing a deep trench pattern etching process and a patternless etching process in situ, comprising the steps of: positioning the annular shielding member to The first position; performing the deep trench pattern etching process; positioning the annular shielding member to the second position; and performing the patternless etching process.
相較于習知技術，本發明的電漿體蝕刻裝置利用在深溝槽圖形蝕刻製程和無圖形蝕刻製程中將可升降的環狀遮蔽部件分別定位於反應腔室內的不同位置，可實現兩種蝕刻製程的原位執行，同時每一種蝕刻製程中的蝕刻速率的均一性及蝕刻形貌均得以保持，提高了工藝效率和產品良率。 Compared with the prior art, the plasma etching apparatus of the present invention utilizes the positioning of the liftable annular shielding members in different positions in the reaction chamber in the deep trench pattern etching process and the patternless etching process, thereby realizing two kinds of positions. The in-situ execution of the etch process while maintaining uniformity and etch profile of the etch rate in each etch process improves process efficiency and product yield.
10‧‧‧反應腔室 10‧‧‧Reaction chamber
11‧‧‧反應氣體噴淋頭 11‧‧‧Reactive gas sprinkler
12‧‧‧靜電夾盤 12‧‧‧Electrical chuck
13‧‧‧聚焦環 13‧‧‧ Focus ring
14‧‧‧遮蔽環 14‧‧‧ shadow ring
15‧‧‧上電極 15‧‧‧Upper electrode
16‧‧‧下電極 16‧‧‧ lower electrode
20‧‧‧反應腔室 20‧‧‧Reaction chamber
21‧‧‧反應氣體噴淋頭 21‧‧‧Reactive gas sprinkler
22‧‧‧靜電夾盤 22‧‧‧Electrical chuck
23‧‧‧環狀遮蔽部件 23‧‧‧Circular shielding parts
24‧‧‧支撐杆 24‧‧‧Support rod
25‧‧‧驅動單元 25‧‧‧Drive unit
26‧‧‧控制單元 26‧‧‧Control unit
27‧‧‧聚焦環 27‧‧‧ Focus ring
28‧‧‧覆蓋環 28‧‧‧ Coverage ring
RF‧‧‧射頻源 RF‧‧‧RF source
W‧‧‧基片 W‧‧‧ substrates
圖1為習知技術中電漿體蝕刻裝置的結構示意圖；圖2a為本發明一實施例的電漿體蝕刻裝置進行無圖形蝕刻時的結構示意圖； 圖2b為本發明一實施例的電漿體蝕刻裝置進行高深寬比結構蝕刻時的結構示意圖；圖3為本發明另一實施例的電漿體蝕刻裝置的結構示意圖。 1 is a schematic structural view of a plasma etching apparatus in a prior art; FIG. 2a is a schematic structural view of a plasma etching apparatus according to an embodiment of the present invention; 2b is a schematic structural view of a plasma etching apparatus according to an embodiment of the present invention, in which a high aspect ratio structure is etched; FIG. 3 is a schematic structural view of a plasma etching apparatus according to another embodiment of the present invention.
為使本發明的內容更加清楚易懂，以下結合說明書附圖，對本發明的內容作進一步說明。當然本發明並不局限於該具體實施例，本領域內的技術人員所熟知的一般替換也涵蓋在本發明的保護範圍內。 In order to make the content of the present invention clearer and easier to understand, the contents of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the invention is not limited to the specific embodiment, and general replacements well known to those skilled in the art are also encompassed within the scope of the invention.
圖2和圖3顯示了本發明的電漿處理裝置的不同實施方式，本發明的電漿體蝕刻裝置內可原位(in-situ)執行用於形成高深寬比結構的深溝槽圖形蝕刻製程和無圖形蝕刻製程，應該理解，電漿體蝕刻裝置僅僅是示例性的，其可以包括更少或更多的組成元件，或該組成元件的安排可能與圖中所示相同或不同。 2 and 3 show different embodiments of the plasma processing apparatus of the present invention, in which the deep trench pattern etching process for forming a high aspect ratio structure can be performed in-situ in the plasma etching apparatus of the present invention. And without a pattern etch process, it should be understood that the plasma etch device is merely exemplary, it may include fewer or more constituent elements, or the arrangement of the constituent elements may be the same or different than shown in the figures.
實施例1 Example 1
請參見圖2a和圖2b，其所示為本實施例電漿體蝕刻裝置的結構示意圖。電漿體蝕刻裝置包括反應腔室20，反應腔室20的頂部設置有反應氣體噴淋頭21，反應氣體噴淋頭21包含上電極，反應腔室20底部設置有用於夾持待處理基片W的靜電夾盤22，靜電夾盤22中設置有與上電極相對的下電極。射頻源RF施加在下電極上，以形成射頻電場對蝕刻氣體電離生成電漿體。在基片外周側設有可升降的環狀遮蔽部件23。如圖所示，環狀遮蔽部件23通過支撐杆24以非接觸的方式定位於基片W的表面上方。支撐杆24較佳為沿環狀遮蔽部件23的周向均勻分佈為三個，其一端與環狀遮蔽部件23固定連接，另一端連接驅動單元25。本實施例中，驅動單元25設於反應腔室20的底部，其可包含電機、氣缸等設備，用於 使支撐杆24與環狀遮蔽部件23在垂直方向升降以使環狀遮蔽部件23接近或遠離基片W。位於反應腔室外部的控制單元26與驅動單元25相連，其根據反應腔室內所進行的蝕刻製程發出相應控制訊號至驅動單元25以進行環狀遮蔽部件23的升降操作。具體來說，當反應腔室20內待進行深溝槽圖形蝕刻製程時，控制單元26發出第一控制訊號使驅動單元25驅動連杆帶動環狀遮蔽部件23定位至遠離基片W的第一位置，然後進行深溝槽圖形蝕刻。由於環狀遮蔽部件23遠離基片表面，在圖形蝕刻時基片W表面附近的電漿體密度不易受到環狀遮蔽部件23的影響，基片W邊緣區域所蝕刻出的深溝槽的剖面形貌得以保證。而當反應腔室20內待進行無圖形蝕刻製程以調整所形成的深溝槽的深度時，控制單元26發出第二控制訊號使驅動單元25驅動連杆帶動環狀遮蔽部件23定位至接近基片W的第二位置，然後再執行無圖形蝕刻。由於環狀遮蔽部件23鄰近基片表面，阻止部分電漿體接觸基片周緣，從而降低基片邊緣處的蝕刻速率，保證了整個基片表面的蝕刻均一性，進而改善了各高深寬比結構的蝕刻深度、頂部特徵尺寸和底部特徵尺寸的均一性。 Referring to FIG. 2a and FIG. 2b, a schematic structural view of the plasma etching apparatus of the present embodiment is shown. The plasma etching apparatus includes a reaction chamber 20, a reaction gas shower head 21 is disposed at the top of the reaction chamber 20, the reaction gas shower head 21 includes an upper electrode, and a bottom portion of the reaction chamber 20 is provided for holding the substrate to be processed. The electrostatic chuck 22 of W is provided with a lower electrode opposed to the upper electrode in the electrostatic chuck 22. An RF source RF is applied to the lower electrode to form a radio frequency electric field that ionizes the etching gas to form a plasma. An annular shielding member 23 that can be raised and lowered is provided on the outer peripheral side of the substrate. As shown, the annular shielding member 23 is positioned in a non-contact manner over the surface of the substrate W by the support bars 24. The support bars 24 are preferably evenly distributed in the circumferential direction of the annular shielding member 23, three ends of which are fixedly connected to the annular shielding member 23, and the other end is connected to the driving unit 25. In this embodiment, the driving unit 25 is disposed at the bottom of the reaction chamber 20, and may include equipment such as a motor and a cylinder for The support rod 24 and the annular shielding member 23 are raised and lowered in the vertical direction to bring the annular shielding member 23 toward or away from the substrate W. The control unit 26 located outside the reaction chamber is connected to the driving unit 25, and sends a corresponding control signal to the driving unit 25 according to an etching process performed in the reaction chamber to perform the lifting operation of the annular shielding member 23. Specifically, when the deep trench pattern etching process is to be performed in the reaction chamber 20, the control unit 26 issues a first control signal to cause the driving unit 25 to drive the link to drive the annular shielding member 23 to a first position away from the substrate W. Then perform a deep trench pattern etch. Since the annular shielding member 23 is away from the surface of the substrate, the density of the plasma near the surface of the substrate W during pattern etching is not easily affected by the annular shielding member 23, and the cross-sectional morphology of the deep trench etched from the edge region of the substrate W is observed. Guaranteed. When the pattern-free etching process is to be performed in the reaction chamber 20 to adjust the depth of the formed deep trench, the control unit 26 issues a second control signal to cause the driving unit 25 to drive the link to drive the annular shielding member 23 to be positioned close to the substrate. The second position of W is then performed without pattern etching. Since the annular shielding member 23 is adjacent to the surface of the substrate, a part of the plasma is prevented from contacting the periphery of the substrate, thereby reducing the etching rate at the edge of the substrate, ensuring the etching uniformity of the entire substrate surface, thereby improving the high aspect ratio structure. Uniformity of etch depth, top feature size, and bottom feature size.
在本實施例中，環狀遮蔽部件23為例如陶瓷或石英等絕緣材料製成的遮蔽環(shadow ring)，當進行無圖形蝕刻遮蔽環23由驅動單元25下降至第二位置時，其下表面位於基片頂部上方1~2mm，當進行圖形蝕刻遮蔽環23由驅動單元25上升至第一位置時，其下表面位於基片頂部上方15~30mm。遮蔽環23的內周面為自上向下徑向向外延伸的錐形面，由此在頂端形成一突出部。該突出部在水準方向上與基片邊緣的距離為±5mm範圍之內。當處於無圖形蝕刻製程時，這種傾斜突出部的設計適當削弱了到達被遮蔽環23遮蔽區域的電漿體，使得基片W中心區域和邊緣區域的蝕刻速度相當。 In the present embodiment, the annular shielding member 23 is a shadow ring made of an insulating material such as ceramic or quartz, and when the pattern-free etching mask ring 23 is lowered from the driving unit 25 to the second position, The surface is located 1~2 mm above the top of the substrate. When the pattern etching mask ring 23 is raised from the driving unit 25 to the first position, the lower surface is 15 to 30 mm above the top of the substrate. The inner circumferential surface of the shadow ring 23 is a tapered surface extending radially outward from the upper side, thereby forming a projection at the top end. The protrusion is within a range of ±5 mm from the edge of the substrate in the level direction. When in a pattern-free etching process, the design of such a slanted protrusion appropriately attenuates the plasma reaching the shielded area of the shielded ring 23 such that the etch rate of the central and edge regions of the substrate W is comparable.
請繼續參考圖2a和圖2b，在本實施例中，反應腔室內還包括聚焦環27和覆蓋環28。聚焦環27和覆蓋環28均位於遮蔽環23下方。聚焦環27和覆蓋環28的上表面平齊，稍突出於待處理基片W的頂面，一般為1~2mm。因此，當遮蔽環23處於第二位置時能夠直接貼合於聚焦環27和覆蓋環28的上表面。其中，聚焦環27設於待處理基片W的外周側，其用以在基片W周圍提供一個相對封閉的環境，約束電漿體以改善基片表面電漿體的均一性。覆蓋環28圍繞聚焦環27設置。由於靜電夾盤的頂部表面始終是被聚焦環27和覆蓋環28所覆蓋，在蝕刻過程特別是遮蔽環23升起的深溝槽圖形蝕刻製程中，可減小靜電夾盤頂部表面對電漿體或該電漿體的反應性物質的暴露程度，保護靜電夾盤免受損耗。聚焦環27和覆蓋環28均可採用陶瓷或石英等絕緣材料形成。此外，由於遮蔽環23貼合於聚焦環27和覆蓋環28的上表面時也即是處於第二位置，定位更加方便可靠。 With continued reference to FIGS. 2a and 2b, in the present embodiment, the reaction chamber further includes a focus ring 27 and a cover ring 28. Both the focus ring 27 and the cover ring 28 are located below the shadow ring 23. The upper surface of the focus ring 27 and the cover ring 28 are flush and slightly protrude from the top surface of the substrate W to be processed, and is generally 1 to 2 mm. Therefore, when the shadow ring 23 is in the second position, it can be directly attached to the upper surfaces of the focus ring 27 and the cover ring 28. Wherein, the focus ring 27 is disposed on the outer peripheral side of the substrate W to be processed, which serves to provide a relatively closed environment around the substrate W, and constrains the plasma to improve the uniformity of the plasma on the surface of the substrate. The cover ring 28 is disposed around the focus ring 27. Since the top surface of the electrostatic chuck is always covered by the focus ring 27 and the cover ring 28, the top surface of the electrostatic chuck can be reduced to the plasma during the etching process, particularly the deep trench pattern etching process in which the shadow ring 23 rises. Or the exposure level of the reactive substance of the plasma protects the electrostatic chuck from loss. Both the focus ring 27 and the cover ring 28 may be formed of an insulating material such as ceramic or quartz. In addition, since the shielding ring 23 is attached to the upper surface of the focus ring 27 and the cover ring 28, that is, in the second position, the positioning is more convenient and reliable.
實施例2 Example 2
圖3是本發明所提供的電漿體蝕刻裝置另一實施例的結構示意圖，其特點為可移動的環狀遮蔽部件23為氣體導向環。氣體導向環23通過支撐杆24非接觸地設於基片W的表面上方。支撐杆24較佳為沿氣體導向環23的周向均勻分佈為三個，其一端與氣體導向環23固定連接，另一端連接驅動單元25。驅動單元25接收來自控制單元26的訊號驅動支撐杆帶動氣體導向環23在垂直方向上移動。電漿體蝕刻裝置內的其他部件，如靜電夾盤22、氣體噴淋頭21、控制單元26和驅動單元25等都可參照前述實施例設置。 3 is a schematic structural view of another embodiment of the plasma etching apparatus provided by the present invention, characterized in that the movable annular shielding member 23 is a gas guiding ring. The gas guiding ring 23 is provided non-contactly above the surface of the substrate W by the support rod 24. The support rods 24 are preferably evenly distributed in the circumferential direction of the gas guiding ring 23, three ends of which are fixedly connected to the gas guiding ring 23, and the other end is connected to the driving unit 25. The drive unit 25 receives the signal-driven support rod from the control unit 26 to drive the gas guide ring 23 to move in the vertical direction. Other components within the plasma etching apparatus, such as electrostatic chuck 22, gas shower head 21, control unit 26, and drive unit 25, etc., may be provided with reference to the foregoing embodiments.
氣體導向環23本身可引導反應腔室20內的反應氣體改善氣流分佈，此外本實施例中氣體導向環還可對應深溝槽圖形蝕刻和無圖形蝕刻的不同 蝕刻製程在垂直方向移動。當將進行深溝槽圖形蝕刻製程時，控制單元26發出第一控制訊號至驅動單元25，驅動單元25驅動氣體導向環23定位至第一位置，氣體導向環23的下表面位於基片頂部上方30mm~60mm。當將進行無圖形蝕刻製程時，控制單元26發出第二控制訊號至驅動單元25，驅動單元25驅動氣體導向環23定位至第二位置，氣體導向環下表面位於基片頂部上方1~2mm。氣體導向環23的截面形狀可為矩形，材料例如是鋁。氣體導向環在水準方向上自基片的邊緣徑向向內延伸-5mm~5mm。 The gas guiding ring 23 itself can guide the reaction gas in the reaction chamber 20 to improve the gas flow distribution. In addition, the gas guiding ring in this embodiment can also correspond to the difference between the deep groove pattern etching and the patternless etching. The etching process moves in the vertical direction. When the deep trench pattern etching process is to be performed, the control unit 26 sends a first control signal to the driving unit 25, and the driving unit 25 drives the gas guiding ring 23 to be positioned to the first position, and the lower surface of the gas guiding ring 23 is located 30 mm above the top of the substrate. ~60mm. When the patternless etching process is to be performed, the control unit 26 sends a second control signal to the driving unit 25, and the driving unit 25 drives the gas guiding ring 23 to be positioned to the second position, and the lower surface of the gas guiding ring is located 1 to 2 mm above the top of the substrate. The cross-sectional shape of the gas guiding ring 23 may be a rectangle, and the material is, for example, aluminum. The gas guiding ring extends radially inward from the edge of the substrate by -5 mm to 5 mm in the horizontal direction.
本實施例中，電漿體蝕刻裝置的反應腔室20內也可包括聚焦環27和覆蓋環28。聚焦環27和覆蓋環28均位於氣體導向環23下方並且當氣體導向環23下降至第二位置時仍可直接貼合於聚焦環27和覆蓋環28的表面上。聚焦環27和覆蓋環28的上表面平齊，稍突出於待處理基片W的頂面1~2mm。聚焦環27和覆蓋環28的設置均可參照前述實施例。 In this embodiment, the focus chamber 27 and the cover ring 28 may also be included in the reaction chamber 20 of the plasma etching apparatus. Both the focus ring 27 and the cover ring 28 are located below the gas guide ring 23 and can still directly conform to the surfaces of the focus ring 27 and the cover ring 28 when the gas guide ring 23 is lowered to the second position. The upper surface of the focus ring 27 and the cover ring 28 are flush, slightly protruding from the top surface of the substrate W to be processed by 1 to 2 mm. The arrangement of the focus ring 27 and the cover ring 28 can be referred to the foregoing embodiment.
需要說明的是，對於本發明的電漿體蝕刻裝置，環狀遮蔽部件可以根據無圖形蝕刻製程中基片蝕刻均一性的要求而採用各種形狀，尺寸參數，或由不同材料構成。 It should be noted that, for the plasma etching apparatus of the present invention, the annular shielding member can adopt various shapes, dimensional parameters, or different materials according to the requirements of substrate etching uniformity in the patternless etching process.
本發明的電漿體蝕刻裝置原位執行深溝槽圖形蝕刻和無圖形蝕刻製程可以具體包括： The in-situ implementation of the deep trench pattern etching and the patternless etching process of the plasma etching apparatus of the present invention may specifically include:
步驟41、將環狀遮蔽部件定位至第一位置；該步驟中，控制單元發出第一控制訊號至驅動單元，使得驅動單元驅動環狀遮蔽部件上升至第一位置遠離基片表面。 Step 41: Positioning the annular shielding member to the first position; in this step, the control unit sends a first control signal to the driving unit, so that the driving unit drives the annular shielding member to rise to the first position away from the surface of the substrate.
步驟42、進行深溝槽圖形蝕刻製程； 該步驟中，以圖形化的光致抗蝕劑為蝕刻硬光罩，以常規電漿體蝕刻工藝形成深溝槽結構。 Step 42: performing a deep trench pattern etching process; In this step, a patterned photoresist is used as an etched hard mask to form a deep trench structure in a conventional plasma etching process.
步驟43、將環狀遮蔽部件定位至第二位置；該步驟中，控制單元發出第二控制訊號至驅動單元，使得驅動單元驅動環狀遮蔽部件下降至第二位置而鄰近基片表面。 Step 43: Positioning the annular shielding member to the second position; in this step, the control unit sends a second control signal to the driving unit, so that the driving unit drives the annular shielding member to descend to the second position adjacent to the surface of the substrate.
步驟44、進行無圖形蝕刻製程。 Step 44: Perform a patternless etching process.
該步驟中，不採用硬光罩遮蔽，進行電漿體蝕刻，使深溝槽結構的深度達到所期望的深度。 In this step, the hard reticle shielding is used, and plasma etching is performed to make the depth of the deep trench structure reach a desired depth.
綜上所述，本發明的電漿體蝕刻裝置，利用在深溝槽圖形蝕刻製程和無圖形蝕刻製程中將可升降的環狀遮蔽部件定位於反應腔室內的不同位置，可實現兩種蝕刻製程的原位執行，同時每一種蝕刻製程中的蝕刻速率的均一性及蝕刻形貌均得以保持，提高了工藝效率和產品良率。 In summary, the plasma etching apparatus of the present invention can realize two etching processes by positioning the liftable annular shielding member at different positions in the reaction chamber in the deep trench pattern etching process and the patternless etching process. The in-situ execution, while the uniformity of the etch rate and the etched morphology in each etching process are maintained, improving process efficiency and product yield.
雖然本發明已以較佳實施例揭示如上，然所述諸多實施例僅為了便於說明而舉例而已，並非用以限定本發明，本領域中具有通常知識者在不脫離本發明精神和範圍的前提下可作若干的更動與潤飾，本發明所主張的保護範圍應以申請專利範圍所述為准。 The present invention has been described in the above preferred embodiments, and the present invention is not intended to limit the scope of the present invention, and is not intended to limit the scope of the invention. A number of changes and refinements may be made, and the scope of protection claimed by the present invention shall be as described in the scope of the patent application.
20‧‧‧反應腔室 20‧‧‧Reaction chamber
21‧‧‧反應氣體噴淋頭 21‧‧‧Reactive gas sprinkler
22‧‧‧靜電夾盤 22‧‧‧Electrical chuck
23‧‧‧環狀遮蔽部件 23‧‧‧Circular shielding parts
24‧‧‧支撐杆 24‧‧‧Support rod
25‧‧‧驅動單元 25‧‧‧Drive unit
26‧‧‧控制單元 26‧‧‧Control unit
27‧‧‧聚焦環 27‧‧‧ Focus ring
28‧‧‧覆蓋環 28‧‧‧ Coverage ring
RF‧‧‧射頻源 RF‧‧‧RF source
W‧‧‧基片 W‧‧‧ substrates
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| CN113921365B (en) * | 2021-09-29 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and edge protection mechanism thereof |
| CN118363258B (en) * | 2024-06-20 | 2024-09-20 | 深圳市龙图光罩股份有限公司 | Mask etching method, device, equipment and storage medium |
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| US8993422B2 (en) * | 2012-11-09 | 2015-03-31 | Infineon Technologies Ag | Process tools and methods of forming devices using process tools |
| US9410236B2 (en) * | 2012-11-29 | 2016-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sputtering apparatus and method |
| CN103730318B (en) * | 2013-11-15 | 2016-04-06 | 中微半导体设备(上海)有限公司 | A kind of method of crystal round fringes guard ring and minimizing crystal round fringes particle |
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| TW200935506A (en) * | 2007-11-16 | 2009-08-16 | Panasonic Corp | Plasma dicing apparatus and semiconductor chip manufacturing method |
| TW201130395A (en) * | 2009-05-27 | 2011-09-01 | Tokyo Electron Ltd | Circular ring-shaped member for plasma process and plasma processing apparatus |
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| CN105336561A (en) | 2016-02-17 |
| CN105336561B (en) | 2017-07-21 |
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