CN105336561B - Plasma etching apparatus - Google Patents
Plasma etching apparatus Download PDFInfo
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- CN105336561B CN105336561B CN201410345048.6A CN201410345048A CN105336561B CN 105336561 B CN105336561 B CN 105336561B CN 201410345048 A CN201410345048 A CN 201410345048A CN 105336561 B CN105336561 B CN 105336561B
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Abstract
Deep trench pattern etching processing procedure and plasma etching apparatus without pattern etching processing procedure in situ can be performed the invention discloses a kind of, including reaction chamber, it has the electrostatic chuck and the moveable ring-type curtain-shaped cover member located at substrate peripheral side and above substrate of clamping substrate；For driving the driver element and control unit that ring-type curtain-shaped cover member moves in vertical direction.In pending deep trench pattern etching processing procedure, control unit control driver element driving ring-type curtain-shaped cover member is located remotely from the first position of substrate, and in the pending processing procedure without pattern etching, control unit control driver element driving ring-type curtain-shaped cover member is positioned generally proximate the second place of substrate.The present invention can be effectively improved the pattern control of high aspect ratio structure pattern etching and the uniformity without pattern etching.
Description
Technical field
The present invention relates to semiconductor processing equipment, more particularly to a kind of plasma etching apparatus.
Background technology
With the raising and the reduction of element line width of integrated circuit integrated level, plasma etching (Plasma Etching)
Technique has obtained extremely wide application.Plasma etch process is by the reaction chamber of plasma etching apparatus
Electrode is configured, is supplied to using etching gas as reacting gas in reaction chamber, is being reacted using radio frequency is applied on electrode
The plasma of reacting gas is formed in chamber, the dry of etching is completed by atomic group, ion for being generated by the plasma etc.
Method etching technics.
In recent years, using plasma etch process formation high aspect ratio structure, such as TSV silicon holes technology, just increasingly
Widely paid attention to and studied.The formation of high aspect ratio structure, typically using pattern etching processing procedure in crystal column surface shape
Into patterned photoresist as mask layer, plasma is then produced with suitable reacting gas and used not by mask
The etching area of layer protection, so as to etch deep trench.As a rule, after deep trench is etched, it is also possible to can perform not
Need being ultimately formed without pattern etching (blanket etching) processing procedure to the deep trench formed be thinned for mask layer
The high aspect ratio structure of desired depth.However, in without pattern etching processing procedure, fringe region and middle area due to wafer
Domain etch rate is different, and the etch rate of fringe region is fast, and this will cause each high aspect ratio structure in the range of whole wafer to carve
The inconsistent of depth, top characteristic size and bottom characteristic size is lost, and then influences product yield.And if dividing in different chamber
Not carry out high aspect ratio structure pattern etching and without pattern etching, the reduction of process efficiency and the increase of cost can be caused again.
To solve the above problems, a shield ring is set in wafer periphery in the prior art, to reduce fringe region plasma
The bombardment of body, so that etching homogeneity when improving no pattern etching.As shown in figure 1, plasma etching apparatus includes reaction
Chamber 10, wherein introducing has etching gas as reacting gas；The top of reaction chamber 10 is provided with reacting gas spray head 11,
Wherein include Top electrode 15；The bottom of reaction chamber 10 is provided with the electrostatic chuck 12 for clamping pending substrate W, is provided with
There is the bottom electrode 16 relative with Top electrode 15.Radio frequency source RF is applied on bottom electrode 16, between Top electrode 15 and bottom electrode 16
Rf electric field is formed, to etching gas ionization generation plasma.Focusing ring 13 is around substrate W, its top surface and substrate W
Either flush, the plasma for restraining substrate W surface.Shield ring 14 is set around focusing ring periphery, for sheltering or
A part of plasma of substrate peripheral region is covered so that the density of substrate edge part plasma reduces, so as to reduce wafer
The etch rate of 30 edges.
Although however, the etching that can be improved using shield ring in no pattern etching processing procedure in the range of whole substrate is uniform
Property, but shield ring also have impact on the plasma density of fringe region simultaneously, and deep trench in pattern etching processing procedure can be caused to cut open again
Face pattern control is not good.
It is, therefore, desirable to provide a kind of plasma etching apparatus can improve simultaneously high aspect ratio structure pattern control and
Uniformity without pattern etching.
The content of the invention
It is a primary object of the present invention to overcome the defect of prior art there is provided one kind in situ can perform pattern etching and
The etching homogeneity of each etching processing procedure and the plasma etching apparatus of etch topography are not influenceed without pattern etching processing procedure and.
To reach above-mentioned purpose, the present invention provides a kind of plasma etching apparatus, and deep trench figure is performed for original position
Etch processing procedure and without pattern etching processing procedure, it includes reaction chamber, its have for clamp the electrostatic chuck of pending substrate with
And moveable ring-type curtain-shaped cover member, ring-type curtain-shaped cover member is located at the substrate peripheral side and positioned at the top of the substrate；Drive
Moving cell, for driving the ring-type curtain-shaped cover member to move in vertical direction；And control unit, with the driver element phase
Even, it controls the driver element to drive the ring-type curtain-shaped cover member positioning in the pending deep trench pattern etching processing procedure
In the first position away from the substrate, control the driver element driving described in the pending processing procedure without pattern etching
Ring-type curtain-shaped cover member is positioned generally proximate the second place of the substrate.
It is preferred that, the reaction chamber also includes the focusing ring around the substrate, and the focusing ring covers positioned at ring-type
Below part.
It is preferred that, the reaction chamber also includes the cover ring around the focusing ring, and the cover ring is located at the ring
Below shape curtain-shaped cover member and its upper surface is concordant with the upper surface of the focusing ring.
It is preferred that, the ring-type curtain-shaped cover member is shield ring or gas guide ring.
It is preferred that, the inner peripheral surface of the shield ring is the taper surface extended radially outwardly from up to down.
It is preferred that, the cross sectional shape of the gas guide ring is rectangle.
It is preferred that, when the ring-type curtain-shaped cover member is positioned at the second place, its lower surface and the substrate upper surface
Distance be 1~2mm.
It is preferred that, when the shield ring is positioned at the first position, the distance of its lower surface and the substrate upper surface
For 15~30mm；When the gas guide ring is positioned at the first position, the distance of its lower surface and the substrate upper surface
For 30~60mm.
It is preferred that, the ring-type curtain-shaped cover member in the horizontal direction from the edge of the substrate extend radially inwardly -5mm~
5mm。
It is preferred that, the upper surface of the focusing ring and the cover ring protrudes from 1~2mm of upper surface of the substrate.
It is preferred that, when the ring-type curtain-shaped cover member is positioned at the second place, its lower surface fits in the focusing ring
With the upper surface of the cover ring.
It is preferred that, the material of the shield ring is selected from quartz or ceramics, and the material of the gas guide ring is selected from aluminium.
Present invention also offers a kind of lithographic method of the above-mentioned plasma etching apparatus of application, the lithographic method includes
Original position performs deep trench pattern etching processing procedure and without pattern etching processing procedure, and it comprises the following steps：By the ring-type curtain-shaped cover member
Position to the first position；Carry out the deep trench pattern etching processing procedure；The ring-type curtain-shaped cover member is positioned to described
Two positions；And carry out described without pattern etching processing procedure.
Compared to prior art, plasma etching apparatus of the invention is utilized in deep trench pattern etching processing procedure and without figure
Liftable ring-type curtain-shaped cover member is respectively positioned in the diverse location in reaction chamber in shape etching processing procedure, two kinds of quarters can be achieved
The execution in situ of processing procedure is lost, while the homogeneity and etch topography of the etch rate in each etching processing procedure are maintained,
Improve process efficiency and product yield.
Brief description of the drawings
Fig. 1 is the structural representation of plasma etching apparatus in the prior art；
Fig. 2 a carry out structural representation during without pattern etching for the plasma etching apparatus of one embodiment of the invention；
Structure when Fig. 2 b carry out high aspect ratio structure etching for the plasma etching apparatus of one embodiment of the invention is shown
It is intended to；
Fig. 3 is the structural representation of the plasma etching apparatus of another embodiment of the present invention；
Fig. 4 is the schematic flow sheet of the lithographic method of application one embodiment of the invention plasma etching apparatus.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Fig. 2 and Fig. 3 show the different embodiments of the plasma treatment appts of the present invention, and plasma of the invention is carved
In erosion device can in situ (in-situ) perform the deep trench pattern etching processing procedure for forming high aspect ratio structure and carved without figure
Lose processing procedure, it should be appreciated that what plasma etching apparatus was merely exemplary, it can include less or more composition member
Part, or the arrangement of the element may be to that indicated in the drawings identical or different.
Embodiment 1
Fig. 2 a and Fig. 2 b are referred to, it show the structural representation of the present embodiment plasma etching apparatus.Plasma
Body etching device includes reaction chamber 20, and the top of reaction chamber 20 is provided with reacting gas spray head 21, reacting gas spray
First 21 include Top electrode, and the bottom of reaction chamber 20 is provided with the electrostatic chuck 22 for clamping pending substrate W, electrostatic chuck 22
In be provided with the bottom electrode relative with Top electrode.Radio frequency source RF applies on the bottom electrode, to form rf electric field to etching gas
Ionization generation plasma.Liftable ring-type curtain-shaped cover member 23 is provided with substrate peripheral side.As illustrated, ring-type curtain-shaped cover member
23 are positioned at substrate W surface by support bar 24 in a non-contact manner.Support bar 24 is preferably along ring-type shielding portion
The circumference of part 23 is uniformly distributed as three, and its one end is fixedly connected with ring-type curtain-shaped cover member 23, other end connection driver element 25.
In the present embodiment, driver element 25 is located at the bottom of reaction chamber 20, and it can be comprising equipment such as motor, cylinders, for making support
Bar 24 and ring-type curtain-shaped cover member 23 are lifted in vertical direction so that ring-type curtain-shaped cover member 23 is close to or away from substrate W.Positioned at reaction
The control unit 26 of exterior thereto is connected with driver element 25, and it sends accordingly according to the etching processing procedure carried out in reaction chamber
Control signal is to driver element 25 to carry out the descending operation of ring-type curtain-shaped cover member 23.Specifically, treated when in reaction chamber 20
When carrying out deep trench pattern etching processing procedure, control unit 26, which sends the first control signal, makes the drive link of driver element 25 band rotating ring
Shape curtain-shaped cover member 23 is positioned to the first position away from substrate W, then carries out deep trench pattern etching.Due to ring-type curtain-shaped cover member
23 away from substrate surface, and the plasma density in pattern etching near substrate W surface is not easily susceptible to ring-type curtain-shaped cover member 23
Influence, the section pattern for the deep trench that substrate W fringe regions are etched ensured.And when pending in reaction chamber 20
Without pattern etching processing procedure during depth to adjust formed deep trench, control unit 26, which sends the second control signal, makes driving list
First 25 drive links drive ring-type curtain-shaped cover member 23 to position to the second place close to substrate W, and no pattern etching is then performed again.
Due to the adjacent substrate surface of ring-type curtain-shaped cover member 23, blocking portion point Plasma contact substrate periphery, so as to reduce substrate edge
The etch rate at place, it is ensured that the etching homogeneity of whole substrate surface, and then it is deep to improve the etching of each high aspect ratio structure
The homogeneity of degree, top characteristic size and bottom characteristic size.
In the present embodiment, ring-type curtain-shaped cover member 23 is the shield ring that the insulating materials such as ceramics or quartz is made
(shadow ring), when carrying out dropping to the second place by driver element 25 without pattern etching shield ring 23, its lower surface position
1~2mm above the substrate, when carrying out pattern etching shield ring 23 and rising to first position by driver element 25, under it
Surface is located at 15~30mm above substrate.The inner peripheral surface of shield ring 23 is the taper surface extended radially outwardly from up to down,
Thus a protuberance is formed on top.The distance of the protuberance in the horizontal direction with substrate edge is within the scope of ± 5mm.When
During in without pattern etching processing procedure, the design of this sloped shoulders is appropriate weaken reach the shielded shaded areas of ring 23 etc.
Gas ions so that the etching speed of substrate W central areas and fringe region is suitable.
Please continue to refer to Fig. 2 a and Fig. 2 b, in the present embodiment, focusing ring 27 and cover ring 28 are also included in reaction chamber.
Focusing ring 27 and cover ring 28 are respectively positioned on the lower section of shield ring 23.Focusing ring 27 is concordant with the upper surface of cover ring 28, slightly beyond
Pending substrate W top surface, generally 1~2mm.Therefore, it can be mounted directly on when shield ring 23 is in the second place poly-
The upper surface of burnt ring 27 and cover ring 28.Wherein, focusing ring 27 is located at pending substrate W outer circumferential side, and it is used in substrate W weeks
The environment that a relative closure is provided is enclosed, constrains plasma to improve the homogeneity of substrate surface plasma.Cover ring 28
Set around focusing ring 27.By the top surface of electrostatic chuck is to be focused ring 27 and cover ring 28 is covered all the time, in erosion
Quarter process particularly shield ring 23 rise deep trench pattern etching processing procedure in, electrostatic chuck top surface article on plasma can be reduced
The degree of exposure of the reactive materials of body or the plasma, protects electrostatic chuck from loss.Focusing ring 27 and cover ring 28
It can be formed using insulating materials such as ceramics or quartz.Further, since shield ring 23 fits in focusing ring 27 and cover ring 28
It that is to say in the second place, position more convenient and reliable during upper surface.
Embodiment 2
Fig. 3 is the structural representation of another embodiment of plasma etching apparatus provided by the present invention, and its feature is can
Mobile ring-type curtain-shaped cover member 23 is gas guide ring.Gas guide ring 23 is by support bar 24 non-contactly located at substrate W's
Surface.Support bar 24 is preferably uniformly distributed as three along the circumference of gas guide ring 23, its one end and gas guide ring
23 are fixedly connected, other end connection driver element 25.Driver element 25 receives the signal driving support bar from control unit 26
Gas guide ring 23 is driven to move in vertical direction.Miscellaneous part in plasma etching apparatus, such as electrostatic chuck 22, gas
Body spray head 21, control unit 26 and driver element 25 etc. all can refer to previous embodiment setting.
Reacting gas in the bootable reaction chamber 20 of gas guide ring 23 itself improves air flow method, in addition the present embodiment
Middle gas guide ring can also correspond to deep trench pattern etching and the different etching processing procedure without pattern etching is moved in vertical direction.When
When will carry out deep trench pattern etching processing procedure, control unit 26 sends the first control signal to driver element 25, driver element 25
Driving gas guide ring 23 is positioned to first position, the lower surface of gas guide ring 23 be located at 30mm above substrate~
60mm.When that will carry out without pattern etching processing procedure, control unit 26 sends the second control signal to driver element 25, driver element
25 driving gas guide rings 23 are positioned to the second place, and gas guide ring lower surface is located at 1~2mm above substrate.Gas
The cross sectional shape of guide ring 23 can be rectangle, and material is, for example, aluminium.Gas guide ring is in the horizontal direction from the edge footpath of substrate
To-the 5mm that extends internally~5mm.
In the present embodiment, focusing ring 27 and cover ring 28 are may also comprise in the reaction chamber 20 of plasma etching apparatus.
Focusing ring 27 and cover ring 28 be respectively positioned on the lower section of gas guide ring 23 and when gas guide ring 23 drops to the second place still
On the surface that focusing ring 27 and cover ring 28 can be mounted directly on.Focusing ring 27 is concordant with the upper surface of cover ring 28, slightly protrudes
In pending substrate W 1~2mm of top surface.The setting of focusing ring 27 and cover ring 28 can refer to previous embodiment.
It should be noted that for the plasma etching apparatus of the present invention, ring-type curtain-shaped cover member can be according to without figure
Etch the requirement of substrate etching homogeneity in processing procedure and use variously-shaped, dimensional parameters, or be made up of different materials.
Referring next to Fig. 4, it show performs deep trench figure using the plasma etching apparatus original position of the present invention
Shape is etched and the schematic flow sheet without pattern etching processing procedure, and it can be specifically included：
Step 41, ring-type curtain-shaped cover member positioned to first position；
In the step, control unit sends the first control signal to driver element so that driver element driving ring-type masking
Part rises to first position away from substrate surface.
Step 42, progress deep trench pattern etching processing procedure；
In the step, using patterned photoresist as hard mask is etched, formed with conventional plasma etch technique
Deep groove structure.
Step 43, ring-type curtain-shaped cover member positioned to the second place；
In the step, control unit sends the second control signal to driver element so that driver element driving ring-type masking
Part drops to the second place and adjacent substrate surface.
Step 44, progress are without pattern etching processing procedure.
In the step, hard masking film is not used, is carried out plasma etching, the depth of deep groove structure is reached institute's phase
The depth of prestige.
In summary, plasma etching apparatus of the invention, is carved using in deep trench pattern etching processing procedure and without figure
The diverse location that liftable ring-type curtain-shaped cover member is positioned in reaction chamber in erosion processing procedure, can be achieved two kinds and etches processing procedure
Original position is performed, while the homogeneity and etch topography of the etch rate in each etching processing procedure are maintained, improves work
Skill efficiency and product yield.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (11)
1. a kind of plasma etching apparatus, deep trench pattern etching processing procedure is performed and without pattern etching processing procedure for original position, its
It is characterised by, the plasma etching apparatus includes：
Reaction chamber, it has：
Electrostatic chuck for clamping pending substrate；
Moveable ring-type curtain-shaped cover member, located at the substrate peripheral side and positioned at the top of the substrate；
Driver element, for driving the ring-type curtain-shaped cover member to move in vertical direction；And
Control unit, is connected with the driver element, and it controls the drive in the pending deep trench pattern etching processing procedure
The moving cell driving ring-type curtain-shaped cover member is located remotely from the first position of the substrate, pending described without pattern etching
The second place for controlling the driver element to drive the ring-type curtain-shaped cover member to be positioned generally proximate the substrate during processing procedure；
Wherein described ring-type curtain-shaped cover member is shield ring or gas guide ring；
When the ring-type curtain-shaped cover member is that shield ring, the shield ring are positioned at the first position, its lower surface with it is described
The distance of substrate upper surface is 15~30mm；When the ring-type curtain-shaped cover member is gas guide ring, gas guide ring positioning
When the first position, the distance of its lower surface and the substrate upper surface is 30~60mm.
2. plasma etching apparatus according to claim 1, it is characterised in that the reaction chamber is also included around institute
The focusing ring of substrate is stated, the focusing ring is located at below ring-type curtain-shaped cover member.
3. plasma etching apparatus according to claim 2, it is characterised in that the reaction chamber is also included around institute
State the cover ring of focusing ring, the cover ring is located at the upper of below the ring-type curtain-shaped cover member and its upper surface and the focusing ring
Flush.
4. plasma etching apparatus according to claim 1, it is characterised in that the inner peripheral surface of the shield ring is from upper
The taper surface extended radially outwardly downwards.
5. plasma etching apparatus according to claim 1, it is characterised in that the cross sectional shape of the gas guide ring
For rectangle.
6. plasma etching apparatus according to claim 1, it is characterised in that the ring-type curtain-shaped cover member is positioned at institute
When stating the second place, the distance of its lower surface and the substrate upper surface is 1~2mm.
7. plasma etching apparatus according to claim 6, it is characterised in that the ring-type curtain-shaped cover member is in level side
Upwards -5mm~5mm is extended radially inwardly from the edge of the substrate.
8. plasma etching apparatus according to claim 3, it is characterised in that the focusing ring and the cover ring
Upper surface protrudes from 1~2mm of upper surface of the substrate.
9. plasma etching apparatus according to claim 8, it is characterised in that the ring-type curtain-shaped cover member is positioned at institute
When stating the second place, its lower surface fits in the upper surface of the focusing ring and the cover ring.
10. plasma etching apparatus according to claim 1, it is characterised in that the material of the shield ring is selected from stone
English or ceramics, the material of the gas guide ring are selected from aluminium.
11. a kind of lithographic method of plasma etching apparatus of application as described in any one of claim 1 to 10, the etching
Method includes execution deep trench pattern etching processing procedure in situ and without pattern etching processing procedure, and it comprises the following steps：
The ring-type curtain-shaped cover member is positioned to the first position；
Carry out the deep trench pattern etching processing procedure；
The ring-type curtain-shaped cover member is positioned to the second place；And
Carry out described without pattern etching processing procedure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345048.6A CN105336561B (en) | 2014-07-18 | 2014-07-18 | Plasma etching apparatus |
| TW103143954A TWI570802B (en) | 2014-07-18 | 2014-12-16 | Electrolytic etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345048.6A CN105336561B (en) | 2014-07-18 | 2014-07-18 | Plasma etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105336561A CN105336561A (en) | 2016-02-17 |
| CN105336561B true CN105336561B (en) | 2017-07-21 |
Family
ID=55287014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410345048.6A Active CN105336561B (en) | 2014-07-18 | 2014-07-18 | Plasma etching apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105336561B (en) |
| TW (1) | TWI570802B (en) |
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| US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
| US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
| WO2017131927A1 (en) | 2016-01-26 | 2017-08-03 | Applied Materials, Inc. | Wafer edge ring lifting solution |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
| US11011353B2 (en) | 2016-03-29 | 2021-05-18 | Lam Research Corporation | Systems and methods for performing edge ring characterization |
| US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| US10186446B2 (en) * | 2016-09-30 | 2019-01-22 | Axcelis Technology, Inc. | Adjustable circumference electrostatic clamp |
| US9911636B1 (en) | 2016-09-30 | 2018-03-06 | Axcelis Technologies, Inc. | Multiple diameter in-vacuum wafer handling |
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US10600623B2 (en) | 2018-05-28 | 2020-03-24 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| WO2020214327A1 (en) | 2019-04-19 | 2020-10-22 | Applied Materials, Inc. | Ring removal from processing chamber |
| CN110211860B (en) * | 2019-06-26 | 2021-07-13 | 南京中电熊猫液晶显示科技有限公司 | Dry etching equipment |
| KR102077975B1 (en) * | 2019-10-15 | 2020-02-14 | 주식회사 기가레인 | Plasma treatment device with improved plasma treatment verticality |
| CN113972124B (en) * | 2020-07-23 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Grounding assembly, plasma processing device and working method thereof |
| CN113921365B (en) * | 2021-09-29 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and edge protection mechanism thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI570802B (en) | 2017-02-11 |
| CN105336561A (en) | 2016-02-17 |
| TW201604954A (en) | 2016-02-01 |
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