TW201714321A - 三五族氮化物半導體元件 - Google Patents

三五族氮化物半導體元件 Download PDF

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TW201714321A
TW201714321A TW104133000A TW104133000A TW201714321A TW 201714321 A TW201714321 A TW 201714321A TW 104133000 A TW104133000 A TW 104133000A TW 104133000 A TW104133000 A TW 104133000A TW 201714321 A TW201714321 A TW 201714321A
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semiconductor device
nitride semiconductor
algan
epitaxial layer
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郭威宏
林素芳
林坤鋒
蔡佳龍
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財團法人工業技術研究院
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Abstract

一種三五族氮化物半導體元件，包括一AlGaN磊晶層與一金屬電極。所述AlGaN磊晶層為C面的n型或未摻雜層，且AlGaN磊晶層具有由半極性面（Semi-polar plane）構成的磊晶面。所述金屬電極則是直接形成在這個半極性面上。

Description

三五族氮化物半導體元件
本發明是有關於一種三五族氮化物結構，且特別是有關於一種三五族氮化物半導體元件。
在最近十年中，在AlGaN材料系統所發展出的深紫外線（DUV）發光二極體（LED）和光電偵測器，已發現可以用於生化檢測應用、消毒、殺菌或軍事用途等。對於這一系列的元件，必須使用到高鋁含量的AlX Ga1-X N（X＞0.4）磊晶層。但是隨著Al比例增加，會造成能隙變寬和晶體品質變差。同時，相對於GaN，n型AlGaN磊晶層摻雜效率較低，導致在高鋁含量的n-AlGaN歐姆電極的形成方面，面臨極大的困難。
目前對於高鋁含量的n型AlGaN歐姆接觸電極的研究，大部分集中於不同表面處理的方式與不同的金屬組成，例如在金屬沉積之前先在氮氣氣氛下退火；或者利用不同的金屬及不同厚度的組合來製作電極。
本發明提供一種三五族氮化物半導體元件，能降低金屬電極與半導體介面的位能障，進而形成歐姆接觸電極。
本發明另提供一種三五族氮化物半導體元件，能應用於具有n-AlGaN或u-AlGaN電極的元件，藉以解決電極接觸電阻過高所造成焦耳熱的問題，進而提升元件的效率。
本發明的一種三五族氮化物半導體元件，包括一AlGaN磊晶層與一金屬電極。所述AlGaN磊晶層為C面的n型或未摻雜層，且AlGaN磊晶層具有由半極性面（Semi-polar plane）構成的磊晶面。所述金屬電極則是直接形成在這個半極性面上。
本發明的另一種三五族氮化物半導體元件，包括一AlGaN磊晶層與一金屬電極。所述AlGaN磊晶層為C面的n型或未摻雜層，且AlGaN磊晶層具有半極性面與極性面（Polar plane）混合的磊晶面。所述金屬電極則是直接形成在這個半極性面與極性面混合的磊晶面上。
在本發明的一實施例中，上述AlGaN磊晶層中的鋁含量原子數百分比介於5%~90%之間。
在本發明的一實施例中，上述AlGaN磊晶層中的鋁含量原子數百分比介於60%~90 %之間。
在本發明的一實施例中，上述磊晶面是藉由奈米壓印與乾式蝕刻形成的。
在本發明的一實施例中，上述金屬電極包括鈦-鋁(Ti-Al base)或釩(V- base)。
在本發明的一實施例中，上述三五族氮化物半導體元件包括紫外光發光二極體（Deep ultraviolet LED）、紫外光光偵測二極體、氮化鎵高電子移動率電晶體（GaN HEMT）、或具有n-AlGaN或u-AlGaN電極的元件。
基於上述，本發明藉由在具有完全地或部分地半極性面的N-型氮化鋁鎵（N-AlGaN）上直接形成金屬電極，因此能降低金屬電極與半導體介面的位能障，進而形成歐姆接觸電極，以解決電極接觸電阻過高所造成焦耳熱的問題，並解此提升元件的效率。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
現在將參照繪示有實施例的圖式來更完整地描述發明概念的示範實施例。然而，這些圖式並不侷限且可能不會精確地反映任何所給定之實施例的結構或效能特徵，且這些圖式不應被解釋為界定或限制由這些示範實施例所涵蓋之數值的範圍或性質。舉例來說，為了清楚起見，膜層、區域及/或結構的相對厚度及位置可能縮小或放大。
圖1是依照本發明之第一實施例的一種三五族氮化物半導體元件之剖面示意圖。
請參照圖1，本實施例的三五族氮化物半導體元件包括形成在基板100與緩衝層102之上的AlGaN磊晶層104，這層AlGaN磊晶層104為C面的n型或未摻雜層，亦即AlGaN磊晶層104可為c-plane n-AlGaN層或C plane u-AlGaN層。特別是，AlGaN磊晶層104的磊晶面106是由半極性面（Semi-polar plane）108構成的。而在這個半極性面108上直接形成有金屬電極110，其中金屬電極110例如鈦-鋁(Ti-Al base)或釩(V-base)。至於基板100可為藍寶石基板或用於半導體元件的其他材質基板，較佳是使用c-plane藍寶石基板或Si(111)基板；緩衝層102則可為AlN層。
在第一實施例中，AlGaN磊晶層104中的鋁含量例如原子數百分比介於5%~90%之間。假若本實施例的三五族氮化物半導體元件是紫外光發光二極體（Deep ultraviolet LED）、紫外光光偵測二極體、氮化鎵高電子移動率電晶體（GaN HEMT）等元件，則AlGaN磊晶層104中的鋁含量較佳是原子數百分比介於60%~90%之間。但本發明並不限於此，所述三五族氮化物半導體元件只要是具有n-AlGaN或u-AlGaN磊晶層的元件即可。
由於半極性面108作為與金屬電極110的接觸面，所以能降低金屬與半導體界面的位能障，以穿隧的方式形成歐姆接觸電極。
圖2是依照本發明之第二實施例的一種三五族氮化物半導體元件之剖面示意圖。
請參照圖2，本實施例的三五族氮化物半導體元件包括形成在基板200與緩衝層202之上的AlGaN磊晶層204，這層AlGaN磊晶層204為C面的n型或未摻雜層。而且，AlGaN磊晶層204的磊晶面206包括半極性面208a與極性面（Polar plane）208b。而在這個半極性面208a與極性面208b混合的磊晶面206上直接形成有金屬電極210。
在第二實施例中，AlGaN磊晶層204中的鋁含量、金屬電極210的材料、基板200與緩衝層202的例子均可參照第一實施例。至於本實施例的三五族氮化物半導體元件可為紫外光發光二極體、紫外光光偵測二極體、氮化鎵高電子移動率電晶體、或具有n-AlGaN或u-AlGaN電極的元件。
由於金屬電極210與混合了半極性面208a與極性面208b的磊晶面206直接接觸，因此能降低AlGaN磊晶層的接觸電阻，尤其在降低高鋁含量n-AlGaN磊晶層上更為顯著，並因此形成歐姆接觸電極。
圖3是依照本發明之第三實施例的一種三五族氮化物半導體元件之剖面示意圖。
在圖3中，三五族氮化物半導體元件包括形成在基板300與緩衝層302之上的AlGaN磊晶層304和金屬電極310，其中AlGaN磊晶層304的磊晶面306與第二實施例相近，都有半極性面308a與極性面308b，差異在於極性面308b並非平面，而是略呈凹面向上的弧面形狀。第三實施例的其餘條件均可參照第一或第二實施例。
以下列舉實驗例來驗證本發明的功效，但本發明並不侷限於以下的內容。
實 驗 例
首先，在2吋c-plane藍寶石基板上利用有機金屬氣相沉積(MOCVD)成長2000 nm的AlN緩衝層，接著成長2000 nm摻雜矽的n型Al0.63 GaN 磊晶層，並由霍爾量測得知載子濃度為5E18/cm3 。
接著，藉由奈米壓印的方式於n型Al0.63 GaN 磊晶層表面形成多個奈米膠蝕刻面罩，其SEM上視圖如圖4所示。圖4中深色略呈圓形的即為奈米膠蝕刻面罩，其尺寸分布為間距(Pitch)450nm、填充率(fill factor)=1、厚度為100 nm。
然後，用這些奈米膠蝕刻面罩，以感應耦合電漿(Inductively Coupled Plasma，ICP)設備進行乾式蝕刻。條件為：蝕刻氣體Cl2 :8sccm/BCl3 :2sccm、線圈功率(Coil power):175W、平台功率(Plate power):100W、壓力:10mtorr。蝕刻深度約150 nm。在乾式蝕刻後奈米膠蝕刻面罩也會被去除。
乾式蝕刻後形成的Al0.63 GaN磊晶層如圖5的SEM剖面圖所示，具有規則性的半極性面，同時將原本具有極化的磊晶面消除。接著，以快速熱處理方式在氮氣氣氛下，800℃1分鐘的條件下，進行蝕刻後表面的修復。
之後，利用剥離(lift-off)的方式，於具有半極性面的Al0.63 GaN磊晶層上直接形成Ti:150 nm/Al:400nm的金屬電極，並以快速熱處理方式在氮氣氣氛下，600℃1分鐘的條件下，形成歐姆接觸電極。
圖6是實驗例的三五族氮化物半導體元件之剖面示意圖，其中600是2吋c-plane藍寶石基板、602是AlN緩衝層、604是摻雜矽的n型Al0.63 GaN 磊晶層、606是磊晶面、608是半極性面、610是金屬電極。至於612是沒有與金屬電極610接觸的區域，不需形成歐姆接觸電極，因此可為具有極化的磊晶面。
比較例 1
根據實驗例製作三五族氮化物半導體元件，但是在成長2000 nm摻雜矽的n型Al0.63 GaN磊晶層之後就直接形成Ti:150 nm/Al:400nm的金屬電極，而不對磊晶層進行處理。
比較例 2
根據實驗例製作三五族氮化物半導體元件，但是在成長2000 nm摻雜矽的n型Al0.63 GaN磊晶層之後，改以黃光製程的方式形成微米等級之點狀結構(Dot pattern)作為蝕刻面罩，其中點狀結構的尺寸分布為間距9μm、fill factor=4/5，點狀結構的厚度為1.5μm。然後，用這些點狀結構為蝕刻面罩，以ICP設備進行乾式蝕刻。條件為：蝕刻氣體Cl2 :8sccm/BCl3 :2sccm、線圈功率:175W、載台功率:100W、壓力3mtorr；蝕刻深度約150 nm。
乾式蝕刻後形成的是由極性面與非極性面混合的磊晶面。後續製程與實驗例一樣，故不再贅述。
檢測
分別對實驗例、比較例1和比較例2的三五族氮化物半導體元件進行電性量測，並顯示於圖7。
從圖7可知，比較例1和比較例2均非歐姆接觸，會造成接觸電阻值過大；而實驗例中由半極性面(608)構成的磊晶面(606)呈現歐姆接觸(Ohmic contact)，其接觸電阻率為Rc: 1.5E-3 (ohm- cm2 )。因此，本發明確實有助於歐姆接觸電極的製作。
綜上所述，本發明採用全面或部分半極性面（Semi-polar plane）的氮化鋁鎵（AlGaN）的磊晶面作為與金屬接觸的接觸面，能降低c-plane AlGaN的磊晶面與金屬界面的位能障，以穿隧的方式形成歐姆接觸電極。尤其是可有效降低高鋁含量之n型氮化鋁鎵磊晶層與金屬電極之間的位能障，因此本發明的元件適用於如深紫外光 LED、深紫外光偵測器、GaN HEMT等具有高鋁含量磊晶層的歐姆電極，以解決寬能隙材料元件的電極製作困難，並解決電阻過大與元件過熱等問題，進而改善元件特性。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100、200、300‧‧‧基板
102、202、302‧‧‧緩衝層
104、204、304‧‧‧AlGaN磊晶層
106、206、306、606‧‧‧磊晶面
108、208a、308a、608‧‧‧半極性面
110、210、310、610‧‧‧金屬電極
208b、308b‧‧‧極性面
600‧‧‧c-plane藍寶石基板
602‧‧‧AlN緩衝層
604‧‧‧n型Al0.63GaN磊晶層
612‧‧‧區域
圖1是依照本發明之第一實施例的一種三五族氮化物半導體元件之剖面示意圖。 圖2是依照本發明之第二實施例的一種三五族氮化物半導體元件之剖面示意圖。 圖3是依照本發明之第三實施例的一種三五族氮化物半導體元件之剖面示意圖。 圖4是AlGaN磊晶層表面及其上形成之奈米膠蝕刻面罩的SEM上視圖。 圖5是AlGaN磊晶層的半極性面之SEM剖面圖。 圖6是實驗例的三五族氮化物半導體元件之剖面示意圖。 圖7是實驗例、比較例1和比較例2的電流-電壓特性圖。
100‧‧‧基板
102‧‧‧緩衝層
104‧‧‧AlGaN磊晶層
106‧‧‧磊晶面
108‧‧‧半極性面
110‧‧‧金屬電極

Claims (12)

  1. 一種三五族氮化物半導體元件，包括： 一AlGaN磊晶層，具有由半極性面構成的磊晶面，其中該AlGaN磊晶層為C面的n型或未摻雜層；以及 一金屬電極，直接形成在該半極性面上。
  2. 如申請專利範圍第1項所述的三五族氮化物半導體元件，其中該AlGaN磊晶層中的鋁含量原子數百分比介於5%~90%之間。
  3. 如申請專利範圍第2項所述的三五族氮化物半導體元件，其中該AlGaN磊晶層中的鋁含量原子數百分比介於60%~90%之間。
  4. 如申請專利範圍第1項所述的三五族氮化物半導體元件，其中該半極性面是藉由奈米壓印與乾式蝕刻形成的。
  5. 如申請專利範圍第1項所述的三五族氮化物半導體元件，其中該金屬電極包括鈦-鋁(Ti-Al base)或釩(V- base)。
  6. 如申請專利範圍第1項所述的三五族氮化物半導體元件，其中該三五族氮化物半導體元件包括紫外光發光二極體、紫外光光偵測二極體、氮化鎵高電子移動率電晶體(GaN HEMT)、或具有n-AlGaN或u-AlGaN電極的元件。
  7. 一種三五族氮化物半導體元件，包括： 一AlGaN磊晶層，具有半極性面與極性面混合的磊晶面，其中該AlGaN磊晶層為C面的n型或未摻雜層；以及 一金屬電極，直接形成在該半極性面與極性面混合的磊晶面上。
  8. 如申請專利範圍第7項所述的三五族氮化物半導體元件，其中該AlGaN磊晶層中的鋁含量原子數百分比介於5%~90%之間。
  9. 如申請專利範圍第8項所述的三五族氮化物半導體元件，其中該AlGaN磊晶層中的鋁含量原子數百分比介於60%~90%之間。
  10. 如申請專利範圍第7項所述的三五族氮化物半導體元件，其中該磊晶面是藉由奈米壓印與乾式蝕刻形成的。
  11. 如申請專利範圍第7項所述的三五族氮化物半導體元件，其中該金屬電極包括鈦-鋁(Ti-Al base)或釩(V- base)。
  12. 如申請專利範圍第7項所述的三五族氮化物半導體元件，其中該三五族氮化物半導體元件包括紫外光發光二極體、紫外光光偵測二極體、氮化鎵高電子移動率電晶體(GaN HEMT)、或具有n-AlGaN或u-AlGaN電極的元件。
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