TW201712879A - Semi-volatile embedded memory with between-fin floating-gate device and method - Google Patents

Semi-volatile embedded memory with between-fin floating-gate device and method

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Publication number
TW201712879A
TW201712879A TW105115991A TW105115991A TW201712879A TW 201712879 A TW201712879 A TW 201712879A TW 105115991 A TW105115991 A TW 105115991A TW 105115991 A TW105115991 A TW 105115991A TW 201712879 A TW201712879 A TW 201712879A
Authority
TW
Taiwan
Prior art keywords
fin
semi
floating
embedded memory
fin structures
Prior art date
Application number
TW105115991A
Other languages
English (en)
Inventor
Uygar E Avci
Daniel H Morris
Ian A Young
Stephen M Ramey
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW201712879A publication Critical patent/TW201712879A/zh

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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
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    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • G—PHYSICS
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    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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    • H01L27/0203—Particular design considerations for integrated circuits
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • General Engineering & Computer Science (AREA)
  • Non-Volatile Memory (AREA)
TW105115991A 2015-06-26 2016-05-23 Semi-volatile embedded memory with between-fin floating-gate device and method TW201712879A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2015/038079 WO2016209280A1 (en) 2015-06-26 2015-06-26 Semi-volatile embedded memory with between-fin floating-gate device and method

Publications (1)

Publication Number Publication Date
TW201712879A true TW201712879A (en) 2017-04-01

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TW105115991A TW201712879A (en) 2015-06-26 2016-05-23 Semi-volatile embedded memory with between-fin floating-gate device and method

Country Status (6)

Country Link
US (1) US10355005B2 (zh)
EP (1) EP3314664A4 (zh)
KR (1) KR102395485B1 (zh)
CN (1) CN107750396B (zh)
TW (1) TW201712879A (zh)
WO (1) WO2016209280A1 (zh)

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US11114451B1 (en) 2020-02-27 2021-09-07 Silicon Storage Technology, Inc. Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices
CN111968978B (zh) * 2020-08-27 2024-03-12 上海华力集成电路制造有限公司 一种双通道静态随机存储器

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CN107750396B (zh) 2022-02-11
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