TW201701409A - Manufacturing apparatus and manufacturing method - Google Patents

Manufacturing apparatus and manufacturing method Download PDF

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TW201701409A
TW201701409A TW105104553A TW105104553A TW201701409A TW 201701409 A TW201701409 A TW 201701409A TW 105104553 A TW105104553 A TW 105104553A TW 105104553 A TW105104553 A TW 105104553A TW 201701409 A TW201701409 A TW 201701409A
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cut
cutting
substrate
qfn
thickness
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TWI618193B (en
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岡本純
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Towa股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

A QFN substrate is cut at three stages along a plurality of cutting lines set in a grid pattern in the QFN substrate. First, on the cutting lines along the longer direction of the QFN substrate, a portion substantially corresponding to a thickness of a tie bar of a lead frame is cut, thereby forming cut trenches. Next, on the cutting lines along the shorter direction of the QFN substrate, the lead frame and a sealing resin are collectively cut. Next, on the cut trenches along the longer direction of the QFN substrate, a portion corresponding to a remaining thickness of the sealing resin is cut. Since only the portion of the sealing resin is cut on the cut trenches, the processing load when the QFN substrate is finally divided into QFN products can be reduced. Therefore, it is possible to prevent the QFN product from being displaced or scattered from a prescribed position of a cutting jig.

Description

製造裝置及製造方法 Manufacturing device and manufacturing method

本發明有關於一種將被切斷物切斷以製造單片化的複數製品的製造裝置以及製造方法。 The present invention relates to a manufacturing apparatus and a manufacturing method for cutting a cut object to produce a singulated plurality of products.

將印刷基板或引線框等所構成的基板假想的劃分為格子狀的複數區域,於個別的區域裝著晶片狀的元件(例如是半導體晶片)後,將基板整體以樹脂密封者稱為密封完畢基板。藉由使用旋轉刃等的切斷機構將密封完畢基板切斷,於個別的區域單位單片化者成為製品。 A substrate formed of a printed circuit board or a lead frame is virtually divided into a plurality of lattice-shaped regions, and a wafer-shaped device (for example, a semiconductor wafer) is mounted in an individual region, and then the entire substrate is sealed by a resin. Substrate. The sealed substrate is cut by a cutting mechanism such as a rotary blade, and the individual is singulated into individual products.

習知以來,使用製造裝置並藉由旋轉刃等的切斷機構將密封完畢基板的規定區域切斷。首先,於裝設於切斷用台的切斷用治具之上載置並吸著密封完畢基板。其次,將密封完畢基板定位(位置對合)。藉由定位,設定劃分複數區域之假想的切斷線的位置。其次,使吸著有密封完畢基板的切斷用台與切斷機構相對移動。於將切削水噴射至密封完畢基板的切斷部位的同時,藉由切斷機構將密封完畢基板沿設定於密封完畢基板的切斷線切斷。藉由切斷密封完畢基板以製造單片化的製品。 Conventionally, a predetermined region of the sealed substrate has been cut by a cutting mechanism such as a rotary blade using a manufacturing apparatus. First, the sealed substrate is placed on the cutting jig mounted on the cutting table and sucked. Next, the sealed substrate is positioned (positionally aligned). By positioning, the position of the imaginary cut line dividing the plural area is set. Next, the cutting table that sucks the sealed substrate and the cutting mechanism are relatively moved. The cutting water is sprayed onto the cut portion of the sealed substrate, and the sealed substrate is cut along the cutting line set on the sealed substrate by the cutting mechanism. The singulated article is manufactured by cutting the sealed substrate.

伴隨著半導體的細微化的進展,所製造的製品具有逐漸變小的傾向。一邊具有2mm以下尺寸的製品增加。製 品變小的話,切斷用治具的吸著孔的直徑亦變小,吸著製品的吸著力變小。吸著製品的吸著力變小的話,例如是藉由旋轉刃所致的加工負荷、切削水等外力,產生單片化的製品從切斷治具的規定位置偏離並飛散的現象。如發生此些現象的話,於製品產生破裂或裂痕等,使得製品的品質顯著降低。此外,使得製品的產率大幅的惡化。因此,在製品小的情形,切斷用台的移動速度比通常的速度遲(例如是通常的速度的1/10的程度)等,使加工負荷變小以進行切斷。 Along with the progress of the miniaturization of semiconductors, the manufactured articles tend to become smaller. Products having a size of 2 mm or less on one side are added. system When the product is small, the diameter of the suction hole for cutting the jig is also small, and the suction force of the absorbing product is small. When the absorbing power of the absorbing article is small, for example, a machining load such as a rotary blade or an external force such as cutting water causes a phenomenon in which the singulated product deviates from the predetermined position of the cutting jig and scatters. If such a phenomenon occurs, cracks or cracks or the like occur in the product, so that the quality of the product is remarkably lowered. In addition, the yield of the product is greatly deteriorated. Therefore, when the product is small, the moving speed of the cutting table is later than the normal speed (for example, about 1/10 of the normal speed), and the machining load is reduced to perform cutting.

近年來,行動電話、個人電腦等的電子機器進展至小型化、多功能化,並強烈要求能夠高密度封裝的封裝技術。作為高密度封裝技術的其中之一,使用銅、42合金(Fe-Ni)等的金屬所構成的引線框所製造的稱呼為四方扁平無鉛封裝(Quad Flat Non-leaded Package,QFN)的製品(半導體裝置)受到注目。引線框的規定區域(晶粒墊)搭載的複數的半導體晶片一併以樹脂密封,並沿著切斷線切斷,藉此製造QFN。以下,將用於製造QFN的引線框所搭載複數的半導體晶片一併以樹脂密封之密封完畢基板稱為QFN基板,將藉由使QFN基板單片化所製造的製品稱為QFN製品。 In recent years, electronic devices such as mobile phones and personal computers have been miniaturized and multi-functional, and packaging technologies capable of high-density packaging are strongly demanded. As one of the high-density packaging technologies, a product called a Quad Flat Non-leaded Package (QFN) manufactured using a lead frame made of a metal such as copper or a 42 alloy (Fe-Ni) is used. Semiconductor devices are attracting attention. A plurality of semiconductor wafers mounted on a predetermined region (die pad) of the lead frame are collectively sealed with a resin and cut along the cutting line to manufacture QFN. Hereinafter, a sealed semiconductor substrate in which a plurality of semiconductor wafers for mounting a QFN is mounted with a resin is collectively referred to as a QFN substrate, and a product produced by singulating a QFN substrate is referred to as a QFN product.

QFN基板的切斷部,由引線框所包含的細長部分(連接桿,Tie Bar)與經樹脂密封的密封樹脂之多層結構體所構成。在藉由旋轉刃一併切斷金屬與密封樹脂之際,由於將由不同材質所構成的包含金屬與密封樹脂的多層結構體一併切斷而加工負荷變大。特別是,作為引線框的材料之延性材料(具有即使超過彈性限界的應力物體亦不會破壞而延伸的性質之材料)而使用銅 的情形,容易發生旋轉刃的堵塞。此外,加工負荷更為變大。加工負荷變大的話,單片化的製品變得容易從切斷治具的規定位置偏離並飛散。於將QFN基板單片化的情形,必須以比將通常的密封完畢基板的情形更遲的切斷用台的移動速度來進行切斷。因此,具有製造QFN製品之際的生產性降低的問題。 The cut portion of the QFN substrate is composed of a slender portion (a connecting rod, Tie Bar) included in the lead frame and a multilayer structure of a resin-sealed sealing resin. When the metal and the sealing resin are collectively cut by the rotary blade, the processing load is increased by cutting the multilayer structure including the metal and the sealing resin which are composed of different materials. In particular, copper is used as a ductile material of a material of a lead frame (a material having a property of not extending even if a stress object exceeding an elastic limit does not break) In the case, it is prone to blockage of the rotating blade. In addition, the processing load is even larger. When the processing load is increased, the singulated product is easily deviated from the predetermined position of the cutting jig and scattered. In the case of singulating the QFN substrate, it is necessary to cut the cutting speed of the cutting table at a later time than the case of the normal sealed substrate. Therefore, there is a problem that productivity is lowered at the time of manufacturing a QFN product.

在製造QFN等的半導體裝置之際,作為謀求半導體裝置的生產性提升的半導體裝置單元,提案有「(略),將個別的半導體元件搭載於引線框所設置的複數的半導體元件搭載部,(略),藉由密封樹脂密封各半導體元件,(略)沿著前述密封樹脂所構成的各半導體裝置的外周切斷,藉此可得到複數的半導體裝置之半導體裝置單元中,(略)沿著得到複數的半導體裝置之際切斷的切斷部位,於上述密封樹脂的上面形成有凹部」之半導體裝置單元(例如是請參照日本專利公開2002-343817號公報的段落[0012]、第1圖、第2圖)。 In the case of manufacturing a semiconductor device such as a QFN, a semiconductor device unit for improving the productivity of a semiconductor device has been proposed. (Slightly, an individual semiconductor element is mounted on a plurality of semiconductor element mounting portions provided in a lead frame. In a case where the semiconductor elements are sealed by a sealing resin, the semiconductor devices of the plurality of semiconductor devices are obtained (slightly) along the outer periphery of each semiconductor device formed of the sealing resin. A semiconductor device unit in which a recessed portion is formed on the upper surface of the sealing resin when a plurality of semiconductor devices are cut (see, for example, paragraph [0012] and FIG. 1 of Japanese Patent Laid-Open Publication No. 2001-343817 , Figure 2).

如依此先前技術,由於在密封樹脂的上面形成有凹部,於模具部件的內部形成有凸部(請參照日本專利公開2002-343817號公報的段落[0034]、第5圖)。因此,具有用於形成密封樹脂的模具部件(成形模具)的製造成本增加的問題。此外,日本專利公開2002-343817號公報所揭示的半導體裝置單元(QFN單元)10,藉由在切斷之際使用黏著薄片並切斷(例如是請參照日本專利公開2002-343817號公報的段落[0030]、第4圖)。因此,具有在藉由切斷(單片化)製造製品之際的運轉成本增加的問題。 According to the prior art, a concave portion is formed on the upper surface of the sealing resin, and a convex portion is formed inside the mold member (refer to paragraph [0034] and Fig. 5 of Japanese Patent Laid-Open Publication No. 2002-343817). Therefore, there is a problem that the manufacturing cost of the mold member (forming mold) for forming the sealing resin is increased. In addition, the semiconductor device unit (QFN unit) 10 disclosed in Japanese Patent Laid-Open Publication No. 2002-43-31717 is cut by using an adhesive sheet at the time of cutting (for example, refer to paragraphs of Japanese Patent Publication No. 2002-343817) [0030] Figure 4). Therefore, there is a problem that the running cost increases when the product is manufactured by cutting (single piece).

本發明的目的在於提供一種製造裝置以及製造方法,能夠抑制製造製品之際的生產性的降低、成形模具的製造成本的增加、製造製品之際的運轉成本增加的至少其中之一,並將被切斷物單片化以製造製品。 An object of the present invention is to provide a manufacturing apparatus and a manufacturing method capable of suppressing at least one of reduction in productivity when manufacturing a product, an increase in manufacturing cost of a molding die, and an increase in running cost when manufacturing a product, and will be The cut pieces are singulated to produce an article.

為了解決上述課題,本發明的製造裝置使用於將具有沿著第1方向的複數的第1切斷線、沿著與第1方向相交的第2方向的複數的第2切斷線以及藉由第1切斷線與第2切斷線而個別包圍的複數區域之被切斷物切斷,藉此製造與複數區域個別對應的複數製品之際,該製造裝置包括載置被切斷物的台、切斷被切斷物的旋轉刃,使台與旋轉刃以相對的移動速度而相對移動的移動機構,至少控制旋轉刃的旋轉以及移動機構所致的移動之控制部,控制部以使製造裝置進行下述動作的方式控制製造裝置。 In order to solve the above problems, the manufacturing apparatus of the present invention is used for a plurality of first cutting lines having a plurality of directions along a first direction, and a second cutting line of a plurality of second directions intersecting with a first direction. When the object to be cut in the plurality of regions surrounded by the first cutting line and the second cutting line is cut, and the plurality of products corresponding to the plurality of regions are separately manufactured, the manufacturing apparatus includes the object to be cut. a table that cuts a rotating blade of the object to be cut, and a moving mechanism that relatively moves the table and the rotating blade at a relative moving speed, at least controls a rotation of the rotating blade and a movement of the moving mechanism, and the control unit The manufacturing apparatus controls the manufacturing apparatus in such a manner as to perform the following operations.

(1)於複數的第1切斷線中,旋轉刃藉由第1移動速度切斷被切斷物之第1動作。 (1) In the plurality of first cutting lines, the rotary blade cuts the first operation of the object to be cut by the first moving speed.

(2)於複數的第2切斷線中,旋轉刃藉由第2移動速度切削被切斷物的全厚中的一部份厚度,以形成切削溝之第2動作。 (2) In the plurality of second cutting lines, the rotating blade cuts a part of the thickness of the cut object by the second moving speed to form the second operation of the cutting groove.

(3)於切削溝中,旋轉刃藉由第3移動速度切斷被切斷物的全厚中的殘餘厚度之第3動作。 (3) The third operation of cutting the residual thickness in the full thickness of the object to be cut by the third moving speed in the cutting groove.

本發明的製造裝置,於上述的製造裝置中,被切斷物包含基板、以及於基板的複數區域中所個別設置的功能元件。 In the manufacturing apparatus of the present invention, in the above-described manufacturing apparatus, the object to be cut includes a substrate and functional elements individually provided in a plurality of regions of the substrate.

本發明的製造裝置,於上述的製造裝置中,被切斷物包含基板、於基板的複數區域中所個別設置的功能元件、以及保護功能元件的密封樹脂。 In the manufacturing apparatus of the present invention, in the above-described manufacturing apparatus, the object to be cut includes a substrate, a functional element individually provided in a plurality of regions of the substrate, and a sealing resin for protecting the functional element.

本發明的製造裝置,於上述的製造裝置中,基板為引線框,旋轉刃的厚度大於引線框所含的連接桿的寬度。 In the manufacturing apparatus of the present invention, in the above manufacturing apparatus, the substrate is a lead frame, and the thickness of the rotating blade is larger than the width of the connecting rod included in the lead frame.

本發明的製造裝置,於上述的製造裝置中,複數製品為QFN。 In the manufacturing apparatus of the present invention, in the above-described manufacturing apparatus, the plurality of products are QFN.

本發明的製造裝置,於上述的製造裝置中,第3移動速度與第2移動速度相同或遲於第2移動速度。 In the manufacturing apparatus of the present invention, in the above-described manufacturing apparatus, the third moving speed is the same as or shorter than the second moving speed.

為了解決上述課題,本發明的製造方法將具有沿著第1方向的複數的第1切斷線、沿著與第1方向相交的第2方向的複數的第2切斷線以及藉由第1切斷線與第2切斷線而個別包圍的複數區域之被切斷物切斷,藉此製造與複數區域個別對應的複數製品,包含下述步驟:準備包括載置被切斷物的台、切斷被切斷物的旋轉刃,使台與旋轉刃以相對的移動速度而相對移動的移動機構之製造裝置的步驟;於複數的第1切斷線中,旋轉刃藉由第1移動速度切斷被切斷物之第1步驟;於複數的第2切斷線中,旋轉刃藉由第2移動速度切削被切斷物的全厚中的一部份厚度,以形成切削溝之第2步驟;於切削溝中,旋轉刃藉由第3移動速度切斷被切斷物的全厚中的殘餘厚度之第3步驟。 In order to solve the above problems, the manufacturing method of the present invention has a plurality of first cutting lines along the first direction, a second cutting line along a plurality of second directions intersecting the first direction, and the first cutting line The cut product of the plurality of regions surrounded by the cutting line and the second cutting line is cut, thereby manufacturing a plurality of products corresponding to the plurality of regions, and includes the steps of preparing a table including the object to be cut a step of manufacturing a moving mechanism that cuts a rotating blade of the object to be cut and relatively moves the table and the rotating blade at a relative moving speed; and in the plurality of first cutting lines, the rotating blade is moved by the first The first step of cutting the object to be cut at a speed; in the plurality of second cutting lines, the rotating blade cuts a part of the thickness of the cut object by the second moving speed to form a cutting groove The second step is a third step of cutting the residual thickness in the full thickness of the object to be cut by the third moving speed in the cutting groove.

本發明的製造方法,於上述的製造方法中,被切斷物包含基板、以及於基板的複數區域中所個別設置的功能元件。 In the manufacturing method of the present invention, in the above-described manufacturing method, the object to be cut includes a substrate and functional elements individually provided in a plurality of regions of the substrate.

本發明的製造方法,於上述的製造方法中,被切斷物包含基板、於基板的複數區域中所個別設置的功能元件、以及保護功能元件的密封樹脂。 In the above-described manufacturing method, the object to be cut includes a substrate, a functional element individually provided in a plurality of regions of the substrate, and a sealing resin for protecting the functional element.

本發明的製造方法,於上述的製造方法中,基板 為引線框,旋轉刃的厚度大於引線框所含的連接桿的寬度。 The manufacturing method of the present invention, in the above manufacturing method, the substrate For the lead frame, the thickness of the rotating blade is greater than the width of the connecting rod included in the lead frame.

本發明的製造方法,於上述的製造方法中,複數製品為QFN。 In the production method of the present invention, in the above production method, the plurality of products are QFN.

本發明的製造方法,於上述的製造方法中,第3移動速度與第2移動速度相同或遲於第2移動速度。 In the manufacturing method of the present invention, in the above manufacturing method, the third moving speed is the same as or shorter than the second moving speed.

如依本發明,控制部控制於複數的第1切斷線中,旋轉刃切斷被切斷物之第1動作;於複數的第2切斷線中,旋轉刃切削被切斷物的全厚中的一部份厚度,以形成切削溝之第2動作;以及於切削溝中,旋轉刃切斷被切斷物的全厚中的殘餘厚度之第3動作。藉此,在將多層結構體所構成的被切斷物單片化以製造製品之際能夠使加工負荷變小。因此能夠防止製品從台的規定位置偏離並飛散。依此,第1,能夠抑制製造製品時的生產性的降低。第2,由於不需在成形模具的內面形成凸部,能夠抑制成形模具的製造成本的增加。第3,由於不需使用黏著薄片,能夠抑制製造製品之際的運轉成本的增加。 According to the invention, the control unit controls the first cutting line of the plurality of cutting lines, and the first operation of cutting the object to be cut by the rotary blade; and the cutting edge of the plurality of cutting lines The thickness of a portion of the thickness is the second operation for forming the cutting groove; and the third operation for cutting the residual thickness of the entire thickness of the object to be cut in the cutting groove. Thereby, the processing load can be reduced when the object to be cut formed of the multilayered structure is singulated to manufacture a product. Therefore, it is possible to prevent the product from deviating from the predetermined position of the stage and scattering. According to this, first, it is possible to suppress a decrease in productivity when manufacturing a product. Secondly, since it is not necessary to form a convex portion on the inner surface of the molding die, an increase in the manufacturing cost of the molding die can be suppressed. Thirdly, since it is not necessary to use an adhesive sheet, it is possible to suppress an increase in running cost when manufacturing a product.

此發明的上述以及其他目的、特徵、局面以及優點,可由附加圖式相關並理解的此發明所關連的下述的詳細說明而理解。 The above and other objects, features, aspects and advantages of the present invention will become apparent from the accompanying Detailed Description.

1‧‧‧QFN基板(被切斷物) 1‧‧‧QFN substrate (cut object)

2‧‧‧引線框(基板) 2‧‧‧ lead frame (substrate)

3‧‧‧半導體晶片(功能元件) 3‧‧‧Semiconductor wafer (functional element)

4‧‧‧晶粒墊 4‧‧‧ die pad

4a‧‧‧晶粒墊的下面 4a‧‧‧ below the die pad

5‧‧‧引線 5‧‧‧Lead

5a‧‧‧引線的下面 5a‧‧‧ below the lead

5b‧‧‧引線的側面 5b‧‧‧ side of the lead

6‧‧‧連接桿 6‧‧‧ Connecting rod

7‧‧‧結合引線 7‧‧‧Combined lead

8‧‧‧密封樹脂 8‧‧‧ Sealing resin

9‧‧‧切斷線(第1切斷線、第2切斷線) 9‧‧‧ cutting line (first cutting line, second cutting line)

10‧‧‧切斷線(第2切斷線、第1切斷線) 10‧‧‧ cutting line (second cutting line, first cutting line)

11‧‧‧區域 11‧‧‧Area

12‧‧‧旋轉刃 12‧‧‧Rotary blade

13‧‧‧QFN製品(製品) 13‧‧‧QFN products (products)

14‧‧‧切斷用台(台) 14‧‧‧Severance desk (set)

15‧‧‧切斷用治具 15‧‧‧Cut cutting tool

16‧‧‧金屬刀 16‧‧‧metal knife

17‧‧‧樹脂薄片 17‧‧‧Resin sheet

18‧‧‧突起部 18‧‧‧Protruding

19‧‧‧吸著孔 19‧‧‧Sucking holes

20‧‧‧空間 20‧‧‧ space

21、22‧‧‧切斷溝 21, 22‧‧‧ cut the ditch

23‧‧‧切削溝 23‧‧‧Cutting trench

24、26‧‧‧切斷痕跡 24, 26‧‧‧ cut marks

25‧‧‧中間體 25‧‧‧Intermediate

27‧‧‧製造裝置 27‧‧‧Manufacture of equipment

28‧‧‧基板供給機構 28‧‧‧Substrate supply mechanism

29‧‧‧移動機構 29‧‧‧Mobile agencies

30‧‧‧旋轉機構 30‧‧‧Rotating mechanism

31‧‧‧心軸 31‧‧‧ mandrel

32‧‧‧檢查用台 32‧‧‧Checking desk

33‧‧‧切斷完畢的QFN基板 33‧‧‧Cuted QFN substrate

34‧‧‧拖盤 34‧‧‧Tray

A‧‧‧基板供給模組 A‧‧‧Substrate supply module

B‧‧‧基板切斷模組 B‧‧‧Substrate cutting module

C‧‧‧檢查模組 C‧‧‧Check module

CTL‧‧‧控制部 CTL‧‧‧Control Department

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

θ‧‧‧角度 θ ‧‧‧ angle

第1A圖所示為藉由本發明的1個實施型態的製造裝置切斷的QFN基板的平面圖,第1B圖為A-A線剖面圖。 Fig. 1A is a plan view showing a QFN substrate cut by a manufacturing apparatus according to an embodiment of the present invention, and Fig. 1B is a cross-sectional view taken along line A-A.

第2A圖所示為第1A圖、第1B圖所示的QFN基板切斷前的狀態的平面圖,第2B圖為表示QFN基板單片化後的狀態的平面圖。 2A is a plan view showing a state before the QFN substrate shown in FIGS. 1A and 1B is cut, and FIG. 2B is a plan view showing a state after the QFN substrate is singulated.

第3A圖所示為第1A圖、第1B圖所示的QFN基板單片化的QFN製品的下面圖,第3B圖為斜視圖。 Fig. 3A is a bottom view showing a QFN product in which the QFN substrate shown in Figs. 1A and 1B is diced, and Fig. 3B is a perspective view.

第4A圖所示為本發明的1個實施型態的製造裝置中所使用的切斷用治具的平面圖,第4B圖為B-B線剖面圖。 Fig. 4A is a plan view showing a cutting jig used in a manufacturing apparatus of one embodiment of the present invention, and Fig. 4B is a cross-sectional view taken along line B-B.

第5A圖所示為使用本發明的1個實施型態的製造裝置沿著QFN基板的長邊方向切削QFN基板的全厚的一部分之狀態的平面圖,第5B圖為C-C線剖面圖。 Fig. 5A is a plan view showing a state in which a part of the full thickness of the QFN substrate is cut along the longitudinal direction of the QFN substrate by using the manufacturing apparatus of one embodiment of the present invention, and Fig. 5B is a cross-sectional view taken along line C-C.

第6A圖所示為使用本發明的1個實施型態的製造裝置沿著QFN基板的短邊方向切斷相當於QFN基板的全厚的部分之狀態的平面圖,第6B圖為D-D線剖面圖。 6A is a plan view showing a state in which a full thickness portion corresponding to the QFN substrate is cut along the short side direction of the QFN substrate by using the manufacturing apparatus of one embodiment of the present invention, and FIG. 6B is a DD line sectional view. .

第7A圖所示為使用本發明的1個實施型態的製造裝置沿著QFN基板的長邊方向切斷QFN基板的全厚中的殘餘部分之狀態的平面圖,第7B圖為E-E線剖面圖。 Fig. 7A is a plan view showing a state in which the remaining portion of the full thickness of the QFN substrate is cut along the longitudinal direction of the QFN substrate by using the manufacturing apparatus of one embodiment of the present invention, and Fig. 7B is a sectional view taken along line EE. .

第8圖所示為本發明的1個實施型態的製造裝置的概要之平面圖。 Fig. 8 is a plan view showing an outline of a manufacturing apparatus of one embodiment of the present invention.

如第7A圖、第7B圖所示,沿著於QFN基板1設定為格子狀的複數的切斷線,將QFN基板分3階段切斷。首先,於沿著QFN基板1的長邊方向的切斷線9中,切削與引線框2的連接桿6的厚度大略相當的部分以形成切削溝23(半切割)。其次,於沿著QFN基板1的短邊方向的切斷線10中,將相當於QFN基板的厚度的全部(全厚度)之部分,換句話說為將引線框2與密封樹脂8一併切斷(全切割)。其次,於沿著QFN基板1的長邊方向之切削溝23中,將殘餘的相當於 密封樹脂8的厚度的部分切斷。藉由於切削溝23中僅將密封樹脂8的部分切斷,最終在將QFN基板1單片化為QFN製品13之際的加工負荷能夠變小。因此,能夠防止QFN製品13從切斷治具15的規定位置偏離並飛散。 As shown in FIGS. 7A and 7B, the QFN substrate is cut in three stages along a plurality of cutting lines which are set in a lattice shape on the QFN substrate 1. First, in the cutting line 9 along the longitudinal direction of the QFN substrate 1, a portion corresponding to the thickness of the connecting rod 6 of the lead frame 2 is cut to form a cutting groove 23 (half-cut). Next, in the cutting line 10 along the short-side direction of the QFN substrate 1, a portion corresponding to all (full thickness) of the thickness of the QFN substrate, in other words, the lead frame 2 and the sealing resin 8 are cut together. Broken (full cut). Next, in the cutting groove 23 along the longitudinal direction of the QFN substrate 1, the residual equivalent is A portion of the thickness of the sealing resin 8 is cut. By cutting only the portion of the sealing resin 8 in the cutting groove 23, the processing load at the time of singulating the QFN substrate 1 into the QFN article 13 can be reduced. Therefore, it is possible to prevent the QFN product 13 from being deviated from the predetermined position of the cutting jig 15 and scattering.

【實施例1】 [Example 1]

本發明的製造裝置的實施例1,參照第1A圖~第7B圖並進行說明。於本申請文件的任一的圖式,為了容易理解而適當的省略或是誇張而模式的描繪。對於相同的構成要件,賦予相同的符號並適當的省略其說明。 The first embodiment of the manufacturing apparatus of the present invention will be described with reference to Figs. 1A to 7B. The drawings in any of the present documents are appropriately omitted or exaggerated and depicted in the drawings for the sake of easy understanding. The same components are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

如第1A圖、第1B圖所示,QFN基板1具有引線框2。於引線框2格子狀的排列有個別搭載半導體晶片(功能元件)3的半導體晶片搭載部(晶粒墊)4。引線框2以銅(Cu)、42合金(Fe-Ni)等的金屬構成,於表面施加有無鉛的焊料鍍敷處理(未圖示)。於各晶粒墊4的周圍配置有多數的引線5。於第1A圖、第1B圖中,連接於半導體晶片3的電極(未圖示)的引線5,於晶粒墊4的周圍的各邊個別配置有4個。配置於各晶粒墊4的周圍的多數的引線5,個別連接於引線框2中排列為格子狀的金屬框之連接桿6。 As shown in FIGS. 1A and 1B, the QFN substrate 1 has a lead frame 2. In the lead frame 2, a semiconductor wafer mounting portion (die pad) 4 on which a semiconductor wafer (functional element) 3 is mounted is arranged in a lattice pattern. The lead frame 2 is made of a metal such as copper (Cu) or 42 alloy (Fe-Ni), and a lead-free solder plating treatment (not shown) is applied to the surface. A plurality of leads 5 are disposed around each of the die pads 4. In FIGS. 1A and 1B, the leads 5 connected to the electrodes (not shown) of the semiconductor wafer 3 are individually arranged on each side of the die pad 4 in four. A plurality of lead wires 5 disposed around the respective die pad 4 are individually connected to the connecting rods 6 of the metal frame arranged in a lattice shape in the lead frame 2.

於第1A圖中,表示沿著長邊方向(於圖中為上下方向)4個、短邊方向(於圖中為左右方向)3個,排列有合計12個的晶粒墊4之引線框2。例如是,如為一邊為2mm以下的小的QFN製品,於1枚的QFN基板1搭載4,000~6,000個程度的半導體晶片3。 In the first drawing, three lead frames in the longitudinal direction (in the vertical direction in the drawing) and three in the short-side direction (the horizontal direction in the drawing) are shown, and a total of twelve die pads 4 are arranged. 2. For example, in the case of a small QFN product having a side of 2 mm or less, 4,000 to 6,000 semiconductor wafers 3 are mounted on one QFN substrate 1.

如第1B圖所示,於各晶粒墊4個別搭載半導體晶 片3。設置於各半導體晶片3的電極(未圖示),藉由金線或銅線所構成的接合引線7與配置於晶粒墊4周圍的引線5電連接。搭載於引線框2的晶粒墊4的所有半導體晶片3以及結合引線7,藉由密封樹脂8一併樹脂密封。QFN基板1為具有引線框2與密封樹脂8的多層結構體。QFN基板1為最終會被切斷並單片化之被切斷物。 As shown in FIG. 1B, semiconductor crystals are individually mounted on each of the die pads 4. Slice 3. The electrodes (not shown) provided in the respective semiconductor wafers 3 are electrically connected to the leads 5 disposed around the die pad 4 by bonding wires 7 made of gold wires or copper wires. All the semiconductor wafers 3 and the bonding leads 7 mounted on the die pad 4 of the lead frame 2 are collectively resin-sealed by the sealing resin 8. The QFN substrate 1 is a multilayer structure having a lead frame 2 and a sealing resin 8. The QFN substrate 1 is a cut object that is finally cut and singulated.

如第1A圖所示,於QFN基板1中,於沿著長邊方向排列的連接桿6的中心線上,沿著長邊方向設定複數的切斷線9。相同的,於沿著短邊方向排列的連接桿6的中心線上,沿著短邊方向設定複數的切斷線10。複數的切斷線9與複數的切斷線10,為QFN基板1中假想設定的格子狀切斷線。 As shown in FIG. 1A, in the QFN substrate 1, a plurality of cutting lines 9 are set along the longitudinal direction of the connecting rod 6 arranged along the longitudinal direction. Similarly, a plurality of cutting lines 10 are set along the short-side direction on the center line of the connecting rod 6 arranged in the short-side direction. The plurality of cutting lines 9 and the plurality of cutting lines 10 are lattice-shaped cutting lines that are imaginarily set in the QFN substrate 1.

如第1B圖所示,切斷線9以及切斷線10的QFN基板1的切斷部的結構,為在金屬構成的連接桿6上形成有密封樹脂8的多層結構體(2層結構體)。因此,藉由將連接桿6與密封樹脂8所積層的多層結構體切斷,將QFN基板1單片化。藉由切斷線9與切斷線10所包圍的複數區域11,對應個別單片化的QFN製品。 As shown in FIG. 1B, the cut line of the cutting line 9 and the QFN substrate 1 of the cutting line 10 is a multilayer structure in which the sealing resin 8 is formed on the connecting rod 6 made of metal (two-layer structure) ). Therefore, the QFN substrate 1 is singulated by cutting the multilayer structure in which the connecting rod 6 and the sealing resin 8 are laminated. The plurality of QFN products are individually singulated by the plurality of regions 11 surrounded by the cutting line 9 and the cutting line 10.

如第2A圖所示,沿著QFN基板1的複數的切斷線9以及複數的切斷線10,例如是使用具有旋轉刃12的切斷機構(未圖示)切斷QFN基板1。於此情形,使用比連接桿6的寬度更厚的旋轉刃12切斷QFN基板1。由於旋轉刃12的厚度大於連接桿6的寬度,藉由旋轉刃12將連接桿6經由全寬度切斷。因此,於切斷結束之後,連接桿6被完全去除。於第2A圖中,例如是引線框2的連接桿6的寬度形成為0.2mm, 使用厚度為0.3mm的旋轉刃12切斷QFN基板1。 As shown in FIG. 2A, the QFN substrate 1 is cut by, for example, a cutting mechanism (not shown) having a rotary blade 12 along a plurality of cutting lines 9 and a plurality of cutting lines 10 of the QFN substrate 1. In this case, the QFN substrate 1 is cut using the rotary blade 12 which is thicker than the width of the connecting rod 6. Since the thickness of the rotary blade 12 is larger than the width of the connecting rod 6, the connecting rod 6 is cut by the full width by the rotary blade 12. Therefore, after the end of the cutting, the connecting rod 6 is completely removed. In FIG. 2A, for example, the width of the connecting rod 6 of the lead frame 2 is formed to be 0.2 mm. The QFN substrate 1 was cut using a rotary blade 12 having a thickness of 0.3 mm.

如第2B圖所示,藉由將QFN基板1切斷並單片化,以製造QFN製品13。藉由將連接桿6完全去除,於連接桿6連接的個別的引線5從連接桿6被切離。因此,單片化的QFN製品13的各引線5成為從連接桿6個別被分離而電獨立之端子。電獨立之端子的引線5,經由結合引線7連接於半導體晶片3的電極(未圖示)。QFN製品13從平面觀察的情形為在製品的外部不具有電連接用引線之無引線型的製品。由於製品的外部不具有引線,可縮小製品的封裝面積。尚且,於第2A圖、第2B圖中,為了顯示QFN基板1以及QFN製品13的內部的狀態,省略密封樹脂8的圖示。 As shown in FIG. 2B, the QFN substrate 13 is manufactured by cutting and singulating the QFN substrate 1. By completely removing the connecting rod 6, the individual leads 5 connected to the connecting rod 6 are cut away from the connecting rod 6. Therefore, the lead wires 5 of the singulated QFN product 13 are terminals which are individually separated from the connecting rod 6 and are electrically independent. The lead 5 of the electrically independent terminal is connected to an electrode (not shown) of the semiconductor wafer 3 via the bonding wire 7. The case where the QFN product 13 is viewed from the plane is a leadless type product which does not have a lead for electrical connection on the outside of the product. Since the exterior of the article does not have leads, the package area of the article can be reduced. In addition, in FIGS. 2A and 2B, in order to show the state of the inside of the QFN substrate 1 and the QFN article 13, the illustration of the sealing resin 8 is omitted.

第3A圖、第3B圖個別表示從下面觀察單片化的QFN製品13的狀態。於QFN製品13下面的4邊個別排列有電獨立之端子的引線5。於第3A圖、第3B圖中,於各邊個別排列有4個的引線5。於單片化的QFN製品13中,晶粒墊4的下面4a以及各引線5的下面5a(請參照第1A圖、第1B圖)維持施加有鍍敷處理的當初的狀態。但是,藉由旋轉刃12切斷的各引線5的側面5b,成為藉由切斷而露出未鍍敷處理之原本金屬的狀態。因此,鍍敷處理的引線5的下面5a作為QFN製品13的電極使用。QFN製品13的各引線5的下面5a,例如是經由焊料連接於印刷基板(PCB:Print Circuit Board)而使用QFN製品13。 3A and 3B individually show the state of the singulated QFN article 13 as viewed from below. Leads 5 of electrically independent terminals are individually arranged on the four sides below the QFN article 13. In the 3A and 3B drawings, four lead wires 5 are individually arranged on each side. In the singulated QFN product 13, the lower surface 4a of the die pad 4 and the lower surface 5a of each lead 5 (see FIG. 1A and FIG. 1B) are maintained in the initial state in which the plating process is applied. However, the side surface 5b of each lead 5 cut by the rotary blade 12 is in a state in which the original metal which is not plated is exposed by cutting. Therefore, the lower surface 5a of the plated lead 5 is used as an electrode of the QFN article 13. The lower surface 5a of each lead 5 of the QFN product 13 is connected to a printed circuit board (PCB: Print Circuit Board) via solder, for example, and the QFN product 13 is used.

如第4A圖、第4B圖所示,切斷用台14是於製造裝置中用於切斷並單片化QFN基板1的台。於切斷用台14裝設對應於製品的切斷用治具15。切斷用治具15包括金屬刀16 以及固定於金屬刀16上的樹脂薄片17。樹脂薄片17要求具有用於緩和機械的衝擊之適度的柔軟性。樹脂薄片17例如是較佳由矽酮系樹脂、氟系樹脂等而形成。為了降低製造裝置的運用成本,切斷用台14相對於複數製品而共通化,僅切斷用治具15對應製品的尺寸、數目而替換。 As shown in FIGS. 4A and 4B, the cutting table 14 is a table for cutting and singulating the QFN substrate 1 in a manufacturing apparatus. The cutting jig 15 corresponding to the product is attached to the cutting table 14. The cutting fixture 15 includes a metal knife 16 And a resin sheet 17 fixed to the metal blade 16. The resin sheet 17 is required to have moderate flexibility for mitigating the impact of the machine. The resin sheet 17 is preferably formed of, for example, an anthrone-based resin or a fluorine-based resin. In order to reduce the operating cost of the manufacturing apparatus, the cutting table 14 is common to the plurality of products, and only the size and number of the products corresponding to the jig 15 are replaced.

於切斷用治具15的樹脂薄片17,設置有個別吸附並保持QFN基板1的複數區域11之複數的台地狀的突起部18。於第4A圖中表示長邊方向6個、短邊方向3個,合計18個的突起部18。於切斷用治具15個別設置有從複數的突起部18的表面貫通樹脂薄片17與金屬刀16的複數的吸著孔19。複數的吸著孔19個別與切斷用台14所設置空間20連接。切斷用台14的空間20連接於設置於外部的吸引機構(未圖示)。QFN基板1的複數區域11藉由個別對應的吸著孔19而吸著於切斷用治具15。 The resin sheet 17 of the cutting jig 15 is provided with a plurality of terrace-like projections 18 that individually adsorb and hold the plurality of regions 11 of the QFN substrate 1. In Fig. 4A, six projections 18 having a total length of six in the longitudinal direction and three in the short side direction are shown. In the cutting jig 15 , a plurality of suction holes 19 penetrating the resin sheet 17 and the metal blade 16 from the surface of the plurality of projections 18 are provided. The plurality of suction holes 19 are individually connected to the space 20 provided in the cutting table 14. The space 20 of the cutting table 14 is connected to an external suction mechanism (not shown). The plurality of regions 11 of the QFN substrate 1 are attracted to the cutting jig 15 by the respective corresponding suction holes 19.

如第4A圖所示,例如是,以對應沿著第1A圖、第1B圖所示的QFN基板1的長邊方向之切斷線9的方式,沿著長邊方向設置複數的切斷溝21。相同的,以對應沿著短邊方向之切斷線10的方式,沿著短邊方向設置複數的切斷溝22。複數的切斷溝21沿著樹脂薄片17(切斷用治具15)的長邊方向,複數的切斷溝22沿著樹脂薄片17(切斷用治具15)的短邊方向而個別形成。複數的切斷溝21以及複數切斷溝22的深度(從突起部18的上面至各溝的內底面為止的距離)設定為0.5mm~1.0mm程度。 As shown in FIG. 4A, for example, a plurality of cutting grooves are provided along the longitudinal direction so as to correspond to the cutting line 9 along the longitudinal direction of the QFN substrate 1 shown in FIGS. 1A and 1B. twenty one. Similarly, a plurality of cutting grooves 22 are provided along the short side direction so as to correspond to the cutting line 10 along the short side direction. In the longitudinal direction of the resin sheet 17 (cutting jig 15), the plurality of cutting grooves 21 are formed separately along the short side direction of the resin sheet 17 (cutting jig 15). . The depth of the plurality of cutting grooves 21 and the plurality of cutting grooves 22 (the distance from the upper surface of the protruding portion 18 to the inner bottom surface of each groove) is set to about 0.5 mm to 1.0 mm.

請參照第5A圖~第7B圖,說明切斷並單片化QFN 基板1的步驟。首先,如第5A圖、第5B圖所示,將QFN基板1的引線框2側的面朝上,以將QFN基板1載置於切斷用台14上。於此狀態中,製造裝置的切斷用台14的短邊方向沿著X方向、長邊方向沿著Y方向配置。 Please refer to Figure 5A ~ Figure 7B for the cutting and singulation of QFN The step of the substrate 1. First, as shown in FIGS. 5A and 5B, the surface of the QFN substrate 1 on the lead frame 2 side faces upward to mount the QFN substrate 1 on the cutting table 14. In this state, the short-side direction of the cutting table 14 of the manufacturing apparatus is arranged along the X direction and the longitudinal direction in the Y direction.

於QFN基板1載置於切斷用台14的狀態中,Q FN基板1的各區域11個別被載置於固定在切斷用台14上的切斷用治具15的突起部18上。因此,沿著QFN基板1的長邊方向的複數的切斷線9,配置於沿著切斷用治具15的長邊方向形成的複數的切斷溝21上。相同的,沿著QFN基板1的短邊方向的複數的切斷線10,配置於沿著切斷用治具15的短邊方向形成的複數的切斷溝22(請參照第4A圖)上。於切斷用台14的規定位置載置QFN基板1的狀態,藉由設置於切斷用治具15的各吸著孔19而個別吸著QFN基板1的各區域11。藉由切斷用治具15個別吸著各區域11,將QFN基板1固定於切斷用台14。 In a state in which the QFN substrate 1 is placed on the cutting table 14, the respective regions 11 of the QFN substrate 1 are individually placed on the protruding portion 18 of the cutting jig 15 fixed to the cutting table 14. Therefore, a plurality of cutting lines 9 along the longitudinal direction of the QFN substrate 1 are disposed on a plurality of cutting grooves 21 formed along the longitudinal direction of the cutting jig 15 . Similarly, a plurality of cutting lines 10 along the short side direction of the QFN substrate 1 are disposed on a plurality of cutting grooves 22 (see FIG. 4A) formed along the short side direction of the cutting jig 15 (see FIG. 4A). . In a state in which the QFN substrate 1 is placed at a predetermined position of the cutting table 14, the respective regions 11 of the QFN substrate 1 are individually sucked by the respective suction holes 19 provided in the cutting jig 15 . The respective regions 11 are individually sucked by the cutting jig 15 to fix the QFN substrate 1 to the cutting table 14.

其次,使切斷用台14與切斷機構(未圖示)相對移動。所謂的「相對的移動」的詞語包含下述3種態樣。此些態樣為切斷用台14固定並使切斷機構移動的態樣,切斷機構固定並使切斷用台14移動的態樣,以及使切斷用台14以及切斷機構兩者移動的態樣。於實施例1中表示切斷機構固定並使切斷用台14移動的態樣。具體而言,表示使用裝設於切斷機構的旋轉刃12將QFN基板1切斷的態樣。 Next, the cutting table 14 is moved relative to the cutting mechanism (not shown). The so-called "relative movement" words include the following three aspects. In such a manner, the cutting table 14 is fixed and the cutting mechanism is moved, the cutting mechanism is fixed, and the cutting table 14 is moved, and both the cutting table 14 and the cutting mechanism are provided. The way of moving. In the first embodiment, the cutting mechanism is fixed and the cutting table 14 is moved. Specifically, the state in which the QFN substrate 1 is cut by the rotary blade 12 attached to the cutting mechanism is shown.

如第5A圖、第5B圖所示,於製造裝置中,切斷用台14可於圖的Y方向移動,而且可於θ方向旋轉。切斷機 構(未圖示)可於X方向以及Z方向移動,旋轉刃12與移動機構共同於X方向以及Z方向移動。於本實施例中,使用比連接桿6的寬度厚的旋轉刃12(請參照第2A圖、第2B圖)。 As shown in FIGS. 5A and 5B, in the manufacturing apparatus, the cutting table 14 is movable in the Y direction of the drawing and is rotatable in the θ direction. The cutting mechanism (not shown) is movable in the X direction and the Z direction, and the rotary blade 12 moves in the X direction and the Z direction together with the moving mechanism. In the present embodiment, the rotary blade 12 having a larger width than the connecting rod 6 is used (refer to FIGS. 2A and 2B).

其次,如第5B圖所示,於QFN基板1的外側,使裝設於切斷機構的旋轉刃12下降。以使旋轉刃12的下端到達至QFN基板1所具有的引線框2的下面,具體而言,為使旋轉刃12下降至比沿著QFN基板1的長邊方向配置的連接桿6(第1A圖、第1B圖)的下面更深的位置。較佳是以旋轉刃12的下端比引線框2的下面更深0.1mm~0.2mm程度的方式,使旋轉刃12下降。旋轉刃12對合於沿著QFN基板1的長邊方向的切斷線9的位置,例如是以30,000~40,000rpm程度高速旋轉。其次,使用移動機構(未圖示)使切斷用台14向+Y方向移動。例如是以與切斷面積大的通常製品之際的條件相同的移動速度(例如是200mm/秒)進行移動。藉由高速旋轉的旋轉刃12,沿著沿QFN基板1的長邊方向的切斷線9,切削引線框2所形成的部分(與引線框2的厚度大略相當的部分)。換句話說,沿著切斷線9僅實質的將引線框2切斷。 Next, as shown in FIG. 5B, the rotary blade 12 attached to the cutting mechanism is lowered outside the QFN substrate 1. The lower end of the rotary blade 12 is reached to the lower surface of the lead frame 2 of the QFN substrate 1, and specifically, the rotary blade 12 is lowered to the connecting rod 6 disposed along the longitudinal direction of the QFN substrate 1 (1A). Figure, Figure 1B) The deeper position below. Preferably, the rotary blade 12 is lowered such that the lower end of the rotary blade 12 is deeper than the lower surface of the lead frame 2 by 0.1 mm to 0.2 mm. The rotary blade 12 is rotated at a high speed of, for example, 30,000 to 40,000 rpm at a position along the cutting line 9 along the longitudinal direction of the QFN substrate 1. Next, the cutting table 14 is moved in the +Y direction by using a moving mechanism (not shown). For example, the movement is performed at the same moving speed (for example, 200 mm/sec) as the condition of the normal product having a large cutting area. The portion formed by the lead frame 2 (portion substantially corresponding to the thickness of the lead frame 2) is cut along the cutting line 9 along the longitudinal direction of the QFN substrate 1 by the rotating blade 12 that rotates at a high speed. In other words, only the lead frame 2 is cut substantially along the cutting line 9.

由於旋轉刃12的下端下降至比引線框2的下面更深的位置,引線框2的形成有連接桿6(請參照第1A圖、第1B圖)的部分(與引線框2的厚度大略相當的部分),橫跨連接桿6的全寬度而切削。沿著沿QFN基板1的長邊方向的切斷線9,密封樹脂8的一部分被切削,密封樹脂8的大部分未被切削而殘留。以此狀態,切削溝23(第5A圖所示的粗的虛線的部分),沿著QFN基板1的長邊方向而形成。沿著QFN 基板1的長邊方向所設定的所有的切斷線9,切削引線框2所形成的部分(與引線框2的厚度大略相當的部分)。於第5A圖中,從圖的左側的切斷線9依序切削。 Since the lower end of the rotary blade 12 is lowered to a position deeper than the lower surface of the lead frame 2, the lead frame 2 is formed with a connecting rod 6 (see FIGS. 1A and 1B) (which is roughly equivalent to the thickness of the lead frame 2). Part), cutting across the full width of the connecting rod 6. A part of the sealing resin 8 is cut along the cutting line 9 along the longitudinal direction of the QFN substrate 1, and most of the sealing resin 8 remains without being cut. In this state, the cutting groove 23 (the portion of the thick broken line shown in FIG. 5A) is formed along the longitudinal direction of the QFN substrate 1. Along QFN All of the cutting lines 9 set in the longitudinal direction of the substrate 1 are cut by a portion (a portion corresponding to the thickness of the lead frame 2) formed by the lead frame 2. In Fig. 5A, the cutting line 9 on the left side of the drawing is sequentially cut.

與切斷密封樹脂8之際的加工負荷相比,切斷延性材料所構成引線框2之際的加工負荷,由於旋轉刃12容易堵塞而變大。因此,於QFN基板1中,將加工負荷大的引線框2的形成有連接桿6(請參照第1A圖、第1B圖)的部分(與引線框2的厚度大略相當的部分)首先切斷。 The processing load when the lead frame 2 formed of the ductile material is cut is cut as compared with the processing load when the sealing resin 8 is cut, and the rotating blade 12 is easily clogged and becomes large. Therefore, in the QFN substrate 1, the portion of the lead frame 2 having a large processing load, in which the connecting rod 6 (see FIG. 1A and FIG. 1B) is formed (the portion corresponding to the thickness of the lead frame 2) is first cut off. .

其次,如同第6A圖所示,使用旋轉機構(未圖示)使切斷用台14旋轉90度。於此狀態,沿著QFN基板1的短邊方向的切斷線10沿著Y方向而配置。於QFN基板1的長邊方向,沿著長邊方向的切斷線9形成有切削溝23(圖示的粗的虛線)。 Next, as shown in Fig. 6A, the cutting table 14 is rotated by 90 degrees using a rotating mechanism (not shown). In this state, the cutting line 10 along the short side direction of the QFN substrate 1 is arranged along the Y direction. In the longitudinal direction of the QFN substrate 1, a cutting groove 23 (a thick broken line as shown) is formed along the cutting line 9 in the longitudinal direction.

其次,如第6B圖所示,於QFN基板1的外側,以使旋轉刃12的下端,到達至比QFN基板1所具有的密封樹脂8的下面更深的位置,而使旋轉刃12下降。較佳是以使旋轉刃12的下端比密封樹脂8深0.1mm~0.2mm程度的方式,使旋轉刃12下降。其次,使旋轉刃12對合於沿著QFN基板1的切斷線10的位置而高速旋轉。其次,使用移動機構(未圖示)使切斷用台14朝向+Y方向,使其以通常的移動速度之200mm/秒移動。藉由高速旋轉的旋轉刃12,沿著於QFN基板1的短邊方向所設定的切斷線10,將引線框2以及密封樹脂8所形成的部分(相當於QFN基板1的全厚的部分)一併切斷。 Next, as shown in FIG. 6B, on the outer side of the QFN substrate 1, the lower end of the rotary blade 12 reaches a position deeper than the lower surface of the sealing resin 8 of the QFN substrate 1, and the rotary blade 12 is lowered. It is preferable to lower the rotary blade 12 such that the lower end of the rotary blade 12 is deeper than the sealing resin 8 by 0.1 mm to 0.2 mm. Next, the rotary blade 12 is rotated at a high speed in accordance with the position along the cutting line 10 of the QFN substrate 1. Next, the cutting table 14 is moved in the +Y direction by a moving mechanism (not shown) to move at a normal moving speed of 200 mm/sec. The portion formed by the lead frame 2 and the sealing resin 8 (corresponding to the full thickness portion of the QFN substrate 1) is formed along the cutting line 10 set in the short-side direction of the QFN substrate 1 by the rotating blade 12 that rotates at a high speed. ) cut off together.

由於旋轉刃12的下端下降至比密封樹脂8的下面更深的位置,引線框2的連接桿6(請參照第1A圖、第1B圖) 以及密封樹脂8所形成的部分,橫跨連接桿6的全寬度而切斷。於此狀態,狹縫狀的切斷痕跡24(第6A圖所示的粗的實線的部分),沿著QFN基板1的短邊方向形成。藉由沿著QFN基板1的短邊方向切斷相當於QFN基板1的全厚的部分,形成中間體25(圖中的網點所示的部分)。於中間體25,於短邊方向排列的3個區域11連接。中間體25藉由2條的切斷線10所對應的切斷痕跡24而分離。沿著QFN基板1的短邊方向所設定的全部的切斷線10,將引線框2以及密封樹脂8所形成的部分一併切斷。於第6A圖中,從圖的左側的切斷線10依序切斷。於此過程中,QFN基板1的兩端(第6A圖的左端以及右端)的不要部分,切離並去除。 The lower end of the rotary blade 12 is lowered to a position deeper than the lower surface of the sealing resin 8, and the connecting rod 6 of the lead frame 2 (please refer to FIG. 1A and FIG. 1B). The portion formed by the sealing resin 8 is cut across the entire width of the connecting rod 6. In this state, the slit-shaped cut marks 24 (portions of the thick solid lines shown in FIG. 6A) are formed along the short-side direction of the QFN substrate 1. The intermediate portion 25 (portion shown by the halftone dot in the figure) is formed by cutting a portion corresponding to the full thickness of the QFN substrate 1 in the short-side direction of the QFN substrate 1. In the intermediate body 25, three regions 11 arranged in the short side direction are connected. The intermediate body 25 is separated by the cutting marks 24 corresponding to the two cutting lines 10 . The portions formed by the lead frame 2 and the sealing resin 8 are collectively cut along all the cutting lines 10 set in the short-side direction of the QFN substrate 1. In Fig. 6A, the cutting line 10 on the left side of the drawing is sequentially cut. In this process, unnecessary portions of both ends (left end and right end of FIG. 6A) of the QFN substrate 1 are cut away and removed.

沿著QFN基板1的短邊方向,將引線框2與密封樹脂8所積層的多層結構體之QFN基板1一併切斷。由於引線框為延性材料而在切斷之際旋轉刃12容易堵塞,加工負荷變大。因此,與單獨切斷引線框2或密封樹脂8的情形相比,由於將引線框2與密封樹脂8一併切斷而加工負荷變得更大。因此,於此狀態,藉由排列於短邊方向的3個區域11所具有的個別的吸著孔19(請參照第4A圖、第4B圖),中間體25穩定的吸著於切斷用治具15。因此,使切斷用台14以通常的速度移動並將QFN基板1沿短邊方向切斷的情形,中間體25不會從切斷用治具15的規定位置偏移並飛散。於實際的QFN基板1中,由於在短邊方向排列有40個~60個程度的區域11,中間體25穩定的吸附於切斷用治具15。 The lead frame 2 is cut together with the QFN substrate 1 of the multilayer structure in which the sealing resin 8 is laminated along the short side direction of the QFN substrate 1. Since the lead frame is a ductile material, the rotary blade 12 is easily clogged at the time of cutting, and the processing load is increased. Therefore, the processing load becomes larger as the lead frame 2 and the sealing resin 8 are collectively cut as compared with the case where the lead frame 2 or the sealing resin 8 is separately cut. Therefore, in this state, the intermediate body 25 is stably sucked and cut by the individual suction holes 19 (see FIGS. 4A and 4B) which are arranged in the three regions 11 in the short-side direction. Fixture 15. Therefore, when the cutting table 14 is moved at a normal speed and the QFN substrate 1 is cut in the short-side direction, the intermediate body 25 is not displaced from the predetermined position of the cutting jig 15 and is scattered. In the actual QFN substrate 1, the intermediate portion 25 is stably adsorbed to the cutting jig 15 by arranging the regions 11 of about 40 to 60 in the short-side direction.

其次,如第7A圖所示,使用旋轉機構(未圖示) 使切斷用台14旋轉90度。於此狀態,沿著QFN基板1的長邊方向形成的切削溝23,沿著Y方向配置。沿著QFN基板1的短邊方向形成的切斷痕跡24,沿著X方向配置。藉由沿著QFN基板1的短邊方向而將相當於QFN基板1的全厚的部分個別切斷的切斷痕跡24,6個的中間體25個別互相分離。 Next, as shown in Fig. 7A, a rotating mechanism (not shown) is used. The cutting table 14 is rotated by 90 degrees. In this state, the cutting grooves 23 formed along the longitudinal direction of the QFN substrate 1 are arranged along the Y direction. The cutting marks 24 formed along the short side direction of the QFN substrate 1 are arranged along the X direction. The six intermediate bodies 25 are individually separated from each other by cutting the cut marks 24 corresponding to the entire thickness of the QFN substrate 1 in the short-side direction of the QFN substrate 1.

其次,如第7B圖所示,於中間體25的集合體的外側,以使旋轉刃12的下端下降至比QFN基板1所具有的密封樹脂8的下面更深的位置的方式,使旋轉刃12下降。較佳是使旋轉刃12的下端比密封樹脂8的下面更深0.1mm~0.2mm程度的方式,使旋轉刃12下降。其次,使旋轉刃12對合沿著QFN基板1的長邊方向形成的切削溝23(第7A圖所示的粗的虛線)的位置。其次,使切斷用台14朝向+Y方向,以通常的移動速度之的200mm/秒移動。藉由高速旋轉的旋轉刃12,沿著沿QFN基板1的長邊方向形成的切削溝23,將密封樹脂8所形成的殘餘的部分(大略相當於密封樹脂8的厚度的部分)切斷。 Next, as shown in FIG. 7B, the rotary blade 12 is formed on the outer side of the assembly of the intermediate body 25 such that the lower end of the rotary blade 12 is lowered to a position deeper than the lower surface of the sealing resin 8 of the QFN substrate 1. decline. It is preferable that the lower end of the rotary blade 12 is made deeper than the lower surface of the sealing resin 8 by about 0.1 mm to 0.2 mm to lower the rotary blade 12. Next, the rotary blade 12 is aligned with the position of the cutting groove 23 (the thick broken line shown in FIG. 7A) formed along the longitudinal direction of the QFN substrate 1. Next, the cutting table 14 is moved in the +Y direction at 200 mm/sec of the normal moving speed. The remaining portion (portion substantially corresponding to the thickness of the sealing resin 8) formed by the sealing resin 8 is cut along the cutting groove 23 formed along the longitudinal direction of the QFN substrate 1 by the rotating blade 12 that rotates at a high speed.

由於旋轉刃12的下端下降至比密封樹脂8的下面深的位置,沿著切削溝23而將密封樹脂8所形成的殘餘的部分全部切斷。於此狀態,將相當於QFN基板1的全厚的部分切斷的切斷痕跡26(第7A圖所示的粗的實線的部分),沿著QFN基板1的長邊方向形成。沿著沿QFN基板1的長邊方向形成的全部切削溝23,將密封樹脂8所形成的殘餘部分切斷。於第7A圖中,從圖的左側的切削溝23依序切斷。於此過程中,QFN基板1的兩端(於第7A圖為左端以及右端)的不要部分,切離並去除。 Since the lower end of the rotary blade 12 is lowered to a position deeper than the lower surface of the sealing resin 8, the remaining portions formed by the sealing resin 8 are cut along the cutting groove 23. In this state, the cut mark 26 (the portion of the thick solid line shown in FIG. 7A) which is cut in the full thickness portion of the QFN substrate 1 is formed along the longitudinal direction of the QFN substrate 1. The remaining portion formed by the sealing resin 8 is cut along all the cutting grooves 23 formed along the longitudinal direction of the QFN substrate 1. In Fig. 7A, the cutting grooves 23 on the left side of the drawing are sequentially cut. In this process, the unnecessary portions of the both ends of the QFN substrate 1 (left end and right end in FIG. 7A) are cut away and removed.

藉由沿著沿QFN基板1的長邊方向形成的切削溝23將密封樹脂8的殘餘部分切斷,將QFN基板1沿著長邊方向完全切斷。依此,如第7A圖所示,個別製造藉由沿著短邊方向形成的切斷痕跡24與沿著長邊方向形成的切斷痕跡26而單片化的QFN製品13。 The remaining portion of the sealing resin 8 is cut along the cutting groove 23 formed along the longitudinal direction of the QFN substrate 1, and the QFN substrate 1 is completely cut along the longitudinal direction. As a result, as shown in FIG. 7A, the QFN article 13 which is singulated by the cutting marks 24 formed along the short side direction and the cutting marks 26 formed along the longitudinal direction is individually manufactured.

如第7B圖所示,所製造的QFN製品13,藉由個別對應的吸著孔19而吸附於切斷用治具15。最後於切斷中間體25而單片化之際的加工負荷大的情形,具有QFN製品13從切斷用治具15的規定位置偏離並飛散的情形。於本實施例,沿著沿QFN基板1的長邊方向形成的切削溝23,將密封樹脂8所形成的殘餘部分於最後切斷,以將QFN製品13單片化。因此,在將QFN製品13單片化之際,由於實質上僅對相當於密封樹脂8的厚度的部分切斷,可使加工負荷變小。由於能夠使最終單片化之際的加工負荷變小,即使是以通常的速度移動切斷用台14以將QFN基板1單片化為QFN製品13的情形,能夠防止QFN製品13從切斷用治具15的規定位置偏離並飛散。 As shown in Fig. 7B, the manufactured QFN product 13 is adsorbed to the cutting jig 15 by the respective corresponding suction holes 19. In the case where the processing load at the time of singulation of the intermediate body 25 is large, the QFN product 13 is displaced from the predetermined position of the cutting jig 15 and scattered. In the present embodiment, the remaining portion formed by the sealing resin 8 is cut along the cutting groove 23 formed along the longitudinal direction of the QFN substrate 1 to singulate the QFN article 13. Therefore, when the QFN product 13 is singulated, since the portion corresponding to the thickness of the sealing resin 8 is substantially cut, the processing load can be reduced. Since the processing load at the time of final singulation can be reduced, even if the cutting table 14 is moved at a normal speed to singulate the QFN substrate 1 into the QFN product 13, the QFN product 13 can be prevented from being cut. The specified position of the jig 15 is deviated and scattered.

於本實施例中,於將QFN基板1單片化為QFN製品13的情形,沿著設定於QFN基板1的複數的切斷線,將QFN基板1分3階段切斷。首先,沿著沿QFN基板1的長邊方向設定的切斷線9,切削引線框2所形成的部分。於此步驟中,使切斷用台14以通常的速度之200mm/秒移動,僅將相當於引線框2的厚度的部分切削。依此,沿著QFN基板1的長邊方向,將相當於QFN基板1的全厚中的一部分厚度之部分切削。其次,沿著QFN基板1的短邊方向,將引線框2與密封樹脂8所 積層的多層結構體一併切斷。於此步驟,使切斷用台14以通常的速度之200mm/秒移動,沿著QFN基板1的短邊方向將相當於QFN基板1的全厚的部分切斷。其次,沿著沿QFN基板1的長邊方向形成的切削溝23,將密封樹脂8所形成的殘餘部分切斷。於此步驟,使切斷用台14以通常的速度之200mm/秒移動,將QFN基板1沿著長邊方向完全切斷。藉由將QFN基板1分為3階段切斷,將QFN基板1單片化為QFN製品13。 In the present embodiment, in the case where the QFN substrate 1 is singulated into the QFN article 13, the QFN substrate is cut in three stages in three stages along a plurality of cutting lines set on the QFN substrate 1. First, the portion formed by the lead frame 2 is cut along the cutting line 9 set along the longitudinal direction of the QFN substrate 1. In this step, the cutting table 14 is moved at a normal speed of 200 mm/sec, and only a portion corresponding to the thickness of the lead frame 2 is cut. Accordingly, a portion corresponding to a part of the thickness of the full thickness of the QFN substrate 1 is cut along the longitudinal direction of the QFN substrate 1. Next, along the short side direction of the QFN substrate 1, the lead frame 2 and the sealing resin 8 are The laminated multilayer structure is cut off together. In this step, the cutting table 14 is moved at a normal speed of 200 mm/sec, and a portion corresponding to the full thickness of the QFN substrate 1 is cut along the short-side direction of the QFN substrate 1. Next, the remaining portion formed by the sealing resin 8 is cut along the cutting groove 23 formed along the longitudinal direction of the QFN substrate 1. In this step, the cutting table 14 is moved at a normal speed of 200 mm/sec, and the QFN substrate 1 is completely cut along the longitudinal direction. The QFN substrate 1 is singulated into a QFN article 13 by dividing the QFN substrate 1 into three stages.

如依本實施例,最後沿著沿QFN基板1的長邊方向形成的切削溝23,僅將密封樹脂8所形成的殘餘部分切斷。藉此將QFN基板1單片化為QFN製品13。由於最後僅將密封樹脂8形成的殘餘部分切斷,能夠使在單片化為QFN製品13之際的加工負荷變小。因此,即使以與切斷面積大的通常製品之際的條件相同的移動速度使切斷用台14移動並單片化為QFN製品13的情形,能夠防止QFN製品13從切斷用治具15的規定位置偏離並飛散。即使是製造舉有一邊為2mm以下的小尺寸之QFN製品的情形,亦能夠防止從切斷用治具15的規定位置偏離並飛散。因此,能夠提升QFN製品的品質與產率。 According to the present embodiment, finally, only the residual portion formed by the sealing resin 8 is cut along the cutting groove 23 formed along the longitudinal direction of the QFN substrate 1. Thereby, the QFN substrate 1 is singulated into the QFN article 13. Since only the remaining portion formed by the sealing resin 8 is cut at the end, the processing load at the time of singulation into the QFN product 13 can be reduced. Therefore, even if the cutting table 14 is moved and singulated into the QFN product 13 at the same moving speed as the normal product having a large cutting area, the QFN product 13 can be prevented from being cut from the jig 15 The specified position deviates and scatters. Even in the case of manufacturing a small-sized QFN product having a side of 2 mm or less, it is possible to prevent the positional deviation from the predetermined position of the cutting jig 15 from being scattered. Therefore, the quality and productivity of the QFN product can be improved.

如依本實施例,與將面積大的通常製品單片化的情形相同,能夠使切斷用台14以與通常的移動速度相同之200mm/秒移動,將QFN基板1切斷並單片化。即使是以與通常的移動速度相同之移動速度使切斷用台14移動並切斷QFN基板1的情形,能夠防止QFN製品13從切斷用治具15的規定位置偏離並飛散。因此,不必要採用習知的方法之在最後切斷並單片化之際的切斷用台14的移動速度遲至1/10並單片化 的方法。因此,於習知的2階段切斷的情形相比,藉由如同本實施例的分為3階段切斷QFN基板1,能夠實質的提升切斷用台14的移動速度。因此,能夠提升製造裝置的生產性,並能夠降低製造裝置的運用成本。 According to the present embodiment, as in the case of singulation of a normal product having a large area, the cutting table 14 can be moved at 200 mm/sec. at the same normal moving speed, and the QFN substrate 1 can be cut and singulated. . Even when the cutting table 14 is moved and the QFN substrate 1 is cut at the same moving speed as the normal moving speed, the QFN product 13 can be prevented from being displaced from the predetermined position of the cutting jig 15 and scattered. Therefore, it is not necessary to adopt a conventional method, and the moving speed of the cutting table 14 at the time of final cutting and singulation is as late as 1/10 and singulated Methods. Therefore, compared with the case of the conventional two-stage cutting, the moving speed of the cutting table 14 can be substantially increased by cutting the QFN substrate 1 in three stages as in the present embodiment. Therefore, the productivity of the manufacturing apparatus can be improved, and the operating cost of the manufacturing apparatus can be reduced.

所謂「與通常的移動速度相同的移動速度」,是表示實質上相同的移動速度。即使是與通常的製造裝置的移動速度相比較而製造裝置的移動速度略為遲速的情形,此製造裝置與通常的製造裝置相比較能夠實現同程度的UPH(Unit Per Hour)的話,亦可被認為「與通常的移動速度相同的移動速度」。 The "moving speed that is the same as the normal moving speed" means substantially the same moving speed. Even if the moving speed of the manufacturing apparatus is slightly delayed compared with the moving speed of the conventional manufacturing apparatus, the manufacturing apparatus can achieve the same level of UPH (Unit Per Hour) as compared with the conventional manufacturing apparatus. It is considered to be "the same moving speed as the normal moving speed".

特別是,近年來伴隨著QFN基板1的大型化以及QFN製品13的小型化之進展,於切斷1枚的QFN製品1而製造多數的QFN製品13的情形之旋轉刃12的行走距離變長。如依本發明,於切斷1枚的QFN基板1之際旋轉刃12的行走距離長的情形,不需使最後切斷並單片化之際的切斷用台14的移動速度成為通常的移動速度的1/10的程度。依此所致的能夠使製造裝置的生產性提升此點,與習知技術相較本發明產生了顯著的效果。 In particular, in recent years, with the increase in the size of the QFN substrate 1 and the miniaturization of the QFN product 13, the traveling distance of the rotary blade 12 is long when a large number of QFN products 13 are cut by cutting one QFN product 1 . According to the present invention, when the traveling distance of the rotary blade 12 is long when one QFN substrate 1 is cut, the moving speed of the cutting table 14 at the time of final cutting and singulation is not required. The degree of movement speed is 1/10. According to this, the productivity of the manufacturing apparatus can be improved, and the present invention produces a remarkable effect as compared with the prior art.

此外,於引線空2的連接桿6中,旋轉刃12僅切削相當於引線框2的厚度的部分。於此情形,與旋轉刃12將QFN基板的全厚一併切斷的情形相比較,QFN基板1與旋轉刃12個別所受的加工負荷降低。依此,防止製品的上緣附近的引線5的側面5b被拉偏至旋轉刃12的旋轉方向並變形此種不佳情形(特別是引線框2的材質為銅的情形容易發生)。 Further, in the connecting rod 6 of the lead wire 2, the rotary blade 12 cuts only the portion corresponding to the thickness of the lead frame 2. In this case, the processing load individually received by the QFN substrate 1 and the rotary blade 12 is reduced as compared with the case where the rotating blade 12 cuts the full thickness of the QFN substrate. Accordingly, it is not preferable to prevent the side surface 5b of the lead 5 near the upper edge of the product from being pulled to the rotational direction of the rotary blade 12 and deforming (in particular, the case where the lead frame 2 is made of copper is likely to occur).

尚且,如依本實施例,與將通常的製品單片化的 情形相同,使切斷用台14的移動速度與通常的移動速度相同之200mm/秒,進行其次的步驟以將QFN基板1單片化。此些為切削相當於QFN基板1的全厚中一部分的厚度之部分的步驟,切斷相當於QFN基板1的全厚之部分的步驟,以及切削相當於全厚中的殘餘厚度之部分的步驟。不限於此,於切斷相當於QFN基板1的全厚之部分的情形,亦能夠以比通常的速度遲的移動速度使切斷用台14移動並切斷QFN基板1。於被切斷物具有更加一層的難切削性的情形,例如是亦可以使移動速度為通常的移動速度的2/5~1/2程度。 Still, as in this embodiment, it is singulated with a conventional product. In the same manner, the moving speed of the cutting table 14 is set to 200 mm/sec which is the same as the normal moving speed, and the next step is performed to singulate the QFN substrate 1. These steps are a step of cutting a portion corresponding to a thickness of a part of the full thickness of the QFN substrate 1, a step of cutting a portion corresponding to the full thickness of the QFN substrate 1, and a step of cutting a portion corresponding to the residual thickness in the full thickness. . In addition, in the case where the portion corresponding to the full thickness of the QFN substrate 1 is cut, the cutting table 14 can be moved and the QFN substrate 1 can be cut at a moving speed that is later than the normal speed. In the case where the object to be cut has a more difficult machinability, for example, the moving speed may be about 2/5 to 1/2 of the normal moving speed.

【實施例2】 [Example 2]

本發明的製造裝置的實施例2,參照第8圖進行說明。如第8圖所示,製造裝置27是將被切斷物(多層結構體)單片化為複數製品的裝置。製造裝置27包括基板供給模組A、基板切斷模組B以及檢查模組C而個別作為構成要件。各構成要件(各模組A~C),個別相對於其他構成要素可裝卸且可交換。 The second embodiment of the manufacturing apparatus of the present invention will be described with reference to Fig. 8. As shown in Fig. 8, the manufacturing apparatus 27 is a device for singulating a cut object (multilayer structure) into a plurality of products. The manufacturing apparatus 27 includes a substrate supply module A, a substrate cutting module B, and an inspection module C as individual constituent elements. Each component (each module A to C) is detachable and exchangeable with respect to other components.

於基板供給模組A設置基板供給機構28。相當於被切斷物的QFN基板1從基板供給機構28搬出,藉由移送機構(未圖示)移送至基板切斷模組B。於基板供給模組A,設置有設定製造裝置27的動作、切斷條件並控制的控制部CTL。 The substrate supply mechanism 28 is provided in the substrate supply module A. The QFN substrate 1 corresponding to the object to be cut is carried out from the substrate supply mechanism 28, and transferred to the substrate cutting module B by a transfer mechanism (not shown). The board supply module A is provided with a control unit CTL that sets the operation and cutting conditions of the manufacturing apparatus 27 and controls them.

第8圖所示的製造裝置27,為單切割台方式的製造裝置。因此,於基板切斷模組B設置1個的切斷用台14。切斷用台14藉由移動機構29可於圖的Y方向移動,而且藉由旋轉機構30可於θ方向旋轉。於切斷用台14裝設有切斷用治具15(請參照第4A圖、第4B圖),於切斷用治具15上載置 並吸著QFN基板1。 The manufacturing apparatus 27 shown in Fig. 8 is a manufacturing apparatus of a single cutting table type. Therefore, one cutting table 14 is provided in the substrate cutting module B. The cutting table 14 is movable in the Y direction of the drawing by the moving mechanism 29, and is rotatable in the θ direction by the rotating mechanism 30. The cutting jig 15 is attached to the cutting table 14 (see FIGS. 4A and 4B), and is placed on the cutting jig 15 And sucking the QFN substrate 1.

於基板切斷模組B,設置切斷機構與心軸31。製造裝置27為設置1個心軸31的單心軸構成的製造裝置。心軸31可獨立的於X方向與Z方向移動。於心軸31裝設有旋轉刃12。於心軸31設置有用以抑制因高速旋轉的旋轉刃12所產生摩擦熱而噴射切削水之切削水用噴嘴(未圖示)。藉由切斷用台14與心軸31相對移動以將QFN基板1切斷。旋轉刃12藉由於包含Y方向以及Z方向的面內旋轉,以將QFN基板1切斷。 The cutting mechanism and the mandrel 31 are provided in the substrate cutting module B. The manufacturing apparatus 27 is a manufacturing apparatus which consists of a single spindle which provided one spindle 31. The mandrel 31 is independently movable in the X direction and the Z direction. A rotating blade 12 is mounted on the mandrel 31. A cutting water nozzle (not shown) for jetting cutting water to suppress frictional heat generated by the rotating blade 12 that rotates at a high speed is provided in the mandrel 31. The QFN substrate 1 is cut by the relative movement of the cutting table 14 and the mandrel 31. The rotary blade 12 cuts the QFN substrate 1 by including in-plane rotation in the Y direction and the Z direction.

於基板切斷模組中B,首先,沿著沿QFN基板1的長邊方向的切斷線切削QFN基板1的全厚中一部份的厚度。其次,藉由旋轉機構30將QFN基板1旋轉90度,沿著沿QFN基板1的短邊方向的切斷線切斷相當於QFN基板1的全厚的厚度之部分。其次,藉由旋轉機構30將QFN基板1旋轉90度,沿著沿QFN基板1的長邊方向的切削溝切斷相當於QFN基板1的全厚中殘餘的厚度之部分。藉由分3階段切斷QFN基板1,製造QFN製品13(請參照第5A圖~第7B圖)。 In the substrate cutting module B, first, the thickness of a part of the full thickness of the QFN substrate 1 is cut along the cutting line along the longitudinal direction of the QFN substrate 1. Then, the QFN substrate 1 is rotated by 90 degrees by the rotating mechanism 30, and a portion corresponding to the full thickness of the QFN substrate 1 is cut along a cutting line along the short side direction of the QFN substrate 1. Then, the QFN substrate 1 is rotated by 90 degrees by the rotating mechanism 30, and a portion corresponding to the thickness of the entire thickness of the QFN substrate 1 is cut along the cutting groove along the longitudinal direction of the QFN substrate 1. The QFN product 13 is manufactured by cutting the QFN substrate 1 in three stages (refer to Figs. 5A to 7B).

於檢查模組C設置有檢查用台32。於檢查用台32載置有切斷QFN基板1而單片化的複數的QFN製品13所成的集合體,亦即是,載置有已切斷的QFN基板33。複數的QFN製品13藉由檢查用照相機(未圖示)進行檢查,以選別良品與不良品。將良品收容於拖盤34。 An inspection table 32 is provided in the inspection module C. An assembly of a plurality of QFN products 13 that are singulated by cutting the QFN substrate 1 is placed on the inspection table 32, that is, the cut QFN substrate 33 is placed. The plurality of QFN products 13 are inspected by an inspection camera (not shown) to select good products and defective products. The good product is contained in the tray 34.

尚且,於本實施例中,進行製造裝置27的動作、QFN基板1的搬送、QFN基板1的切斷、QFN製品13的檢查等之全部的動作、控制的控制部CTL設置於基板供給模組A。 但不限定於此,亦可將控制部CTL設置在其他模組內。 In the present embodiment, the control unit CTL that performs all operations and control of the operation of the manufacturing apparatus 27, the transport of the QFN substrate 1, the cutting of the QFN substrate 1, and the inspection of the QFN product 13 is provided in the substrate supply module. A. However, the present invention is not limited thereto, and the control unit CTL may be provided in another module.

於本實施例中,是以單切斷台方式且單心軸構成的製造裝置27說明。但不限定於此,於單切斷台方式且雙心軸構成的製造裝置或是單切斷台方式且雙心軸構成的製造裝置中,亦可適用本發明。 In the present embodiment, a manufacturing apparatus 27 having a single cutting mechanism and a single spindle is described. However, the present invention is not limited thereto, and the present invention can also be applied to a manufacturing apparatus including a single cutting table system and a double mandrel or a manufacturing apparatus having a single cutting table type and a double mandrel.

於各實施例中,首先,沿著沿QFN基板1的長邊方向的切斷線切削QFN基板1的全厚中一部份的厚度,其次,沿著沿QFN基板1的短邊方向的切斷線切斷相當於QFN基板1的全厚的厚度之部分,最後,沿著沿QFN基板1的長邊方向的切削溝切斷相當於QFN基板1的全厚中殘餘的厚度之部分。但不限定於此,於變形例中,首先,沿著沿QFN基板1的短邊方向的切斷線切削QFN基板1的全厚中一部份的厚度,其次,沿著沿QFN基板1的長邊方向的切斷線切斷相當於QFN基板1的全厚的厚度之部分,最後,沿著沿QFN基板1的短邊方向的切削溝切斷相當於QFN基板1的全厚中殘餘的厚度之部分。 In each of the embodiments, first, the thickness of a part of the full thickness of the QFN substrate 1 is cut along the cutting line along the longitudinal direction of the QFN substrate 1, and secondly, along the short side direction of the QFN substrate 1. The wire breakage corresponds to the thickness of the full thickness of the QFN substrate 1, and finally, the portion corresponding to the thickness of the entire thickness of the QFN substrate 1 is cut along the cutting groove along the longitudinal direction of the QFN substrate 1. However, the present invention is not limited thereto. First, in the modified example, the thickness of a part of the full thickness of the QFN substrate 1 is cut along the cutting line along the short side direction of the QFN substrate 1, and secondly, along the QFN substrate 1. The cutting line in the longitudinal direction cuts the portion corresponding to the full thickness of the QFN substrate 1, and finally cuts along the cutting groove along the short side direction of the QFN substrate 1 corresponding to the total thickness of the QFN substrate 1. Part of the thickness.

於各實施例中,表示將具有包括長邊方向與短邊方向之矩形的形狀的QFN基板1作為被切斷物而切斷之情形。但不限定於此,將具有正方形的形狀之QFN基板切斷的情形亦適用於本發明。 In each of the embodiments, the QFN substrate 1 having a rectangular shape including a long side direction and a short side direction is cut as a cut object. However, the present invention is not limited thereto, and the case of cutting a QFN substrate having a square shape is also applicable to the present invention.

於各實施例中,表示將於引線框2上形成有密封樹脂8的QFN基板1作為被切斷物而切斷的情形。但不限定於此,亦可使用玻璃環氧積層板、印刷配線板、陶瓷基板、金屬基底基板、膜基底基板等作為被切斷物的基板,而於其上形成密封樹脂的密封完畢基板亦適用於本發明。 In each of the examples, the QFN substrate 1 on which the sealing resin 8 is formed on the lead frame 2 is cut as a cut object. However, the glass epoxy laminate, the printed wiring board, the ceramic substrate, the metal base substrate, the film base substrate, or the like may be used as the substrate to be cut, and the sealed substrate on which the sealing resin is formed may be used. Suitable for use in the present invention.

作為功能元件包含積體電路(Integrated Circuit)、電晶體、二極體等的半導體元件,以及此外的感測器、過濾器、致動器、振動器等。在1個區域亦可以搭載複數個功能元件。 The functional element includes a semiconductor element such as an integrated circuit, a transistor, a diode, and the like, and further sensors, filters, actuators, vibrators, and the like. A plurality of functional elements can also be mounted in one area.

於各實施例中,將使用裝設於切斷用台14的切斷用治具15(請參照第4A圖、第4B圖)固定被切斷物之構成適用於本發明。但不限定於此,亦可以將使用黏著帶固定被切斷物的構成適用於本發明。 In each of the embodiments, the configuration in which the object to be cut is fixed by using the cutting jig 15 (see FIGS. 4A and 4B) attached to the cutting table 14 is applied to the present invention. However, the present invention is not limited thereto, and a configuration in which an object to be cut is fixed by using an adhesive tape may be applied to the present invention.

進而,於將矽半導體或化合物半導體的晶圓維持晶圓的狀態一併樹脂密封之晶圓等級封裝此種實質具有圓形狀之被切斷物切斷的情形中,亦可適用於至此為止說明的內容。本發明的被切斷物,亦可為藉由2種以上的材料構成的多層結構體。 Further, in the case where the wafer of the germanium semiconductor or the compound semiconductor is maintained in the state of the wafer and the wafer-level package of the resin is sealed, the substantially cut object having a circular shape is cut, and it is also applicable to the description so far. Content. The object to be cut of the present invention may be a multilayer structure composed of two or more materials.

本發明的製造裝置,於切斷QFN基板1等的多層結構體製造QFN製品13等的製品之際,如同下述動作。此動作為於最終的製造QFN製品13等的步驟(最終步驟)中,於此最終步驟之前所形成的切削溝23中以旋轉刃12將QFN基板1切斷的動作。基於此點,製造裝置亦能夠以下述順序動作的方式而控制。第1,沿著沿QFN基板1的短邊方向的複數的切斷線10,切斷相當於QFN基板1的全厚的厚度之部分。 In the manufacturing apparatus of the present invention, when a product such as the QFN product 13 is produced by cutting a multilayer structure such as the QFN substrate 1, the following operation is performed. This operation is an operation of cutting the QFN substrate 1 by the rotary blade 12 in the cutting groove 23 formed before the final step in the final step (final step) of manufacturing the QFN product 13 or the like. Based on this, the manufacturing apparatus can also be controlled in the following order. First, a portion corresponding to the full thickness of the QFN substrate 1 is cut along a plurality of cutting lines 10 along the short side direction of the QFN substrate 1.

第2,沿著沿QFN基板1的長邊方向的複數的切斷線9切削QFN基板1的全厚中一部份的厚度,藉此形成切削溝23。第3,沿著沿QFN基板1的長邊方向的複數的切斷線9所形成的切削溝23,切斷QFN基板1的全厚中殘餘的厚度之部分。 Second, the thickness of a part of the full thickness of the QFN substrate 1 is cut along a plurality of cutting lines 9 along the longitudinal direction of the QFN substrate 1, thereby forming the cutting grooves 23. Third, the portion of the thickness of the entire thickness of the QFN substrate 1 is cut along the cutting groove 23 formed by the plurality of cutting lines 9 along the longitudinal direction of the QFN substrate 1.

如依本發明,於最終步驟之前所形成的切削溝23中,以旋轉刃12將QFN基板1等的多層結構體切斷,最終製造QFN製品13等。如能滿足此點,於將QFN基板1載置於台切斷用台14之際,亦可以將引線框2側的面朝下而載置。 According to the present invention, in the cutting groove 23 formed before the final step, the multilayer structure of the QFN substrate 1 or the like is cut by the rotary blade 12, and finally the QFN product 13 or the like is finally produced. If this is the case, when the QFN substrate 1 is placed on the stage cutting table 14, the surface of the lead frame 2 side may be placed downward.

本發明的要點在於藉由切斷被切斷物以製造單片化的複數個製品之際,採用下述的構成。此構成為,於最終的製造複數個製品的步驟(最終步驟)中,於此最終步驟之前所形成的切削溝中以旋轉刃將被切斷物切斷。換句話說,本發明的要點,在於藉由切斷被切斷物以製造單片化的複數個製品之際,於最終步驟中切斷被切斷物的全厚中殘餘一部份的厚度。 The gist of the present invention is that the following configuration is employed when the object to be cut is cut to produce a plurality of products which are singulated. In this configuration, in the final step (final step) of manufacturing a plurality of products, the cut object is cut by a rotary blade in the cutting groove formed before the final step. In other words, the gist of the present invention is to cut the thickness of the remaining portion of the full thickness of the object to be cut in the final step by cutting the object to be cut to manufacture a plurality of singulated articles. .

如滿足本發明的要點,被切斷物可為多層結構體,亦可為實質的單層結構體。作為實質的單層結構體的例子,可舉出於主面形成作為電子電路、致動器等功能的功能元件,由Si、SiC、SiN、GaN、鑽石、藍寶石等的材料構成的基板(晶圓)。其他的作為單層結構體的例子,可舉出陶瓷、玻璃系材料。由於此些材料為硬脆性材料,在材料切斷之際容易發生破裂(chipping)、裂痕(crack)等的不良情形。 As the gist of the present invention is satisfied, the object to be cut may be a multilayer structure or a substantially single layer structure. As an example of a substantial single-layer structure, a functional element which functions as an electronic circuit or an actuator, and a substrate made of a material such as Si, SiC, SiN, GaN, diamond, or sapphire (crystal) may be used. circle). Other examples of the single-layer structure include ceramics and glass-based materials. Since these materials are hard and brittle materials, it is prone to occurrence of chipping, cracking, and the like when the material is cut.

如依本發明,在切斷實質的單層結構體以完成最終的製品的情形,能夠降低加工負荷。依此,第1,能夠防止製品從切斷治具的規定位置偏離並飛散。因此,在製造製品之際能夠提升良品率。第2,能夠防止製品的破裂、裂痕等的不良情形的發生。因此,在製造製品之際能夠提升製品的品質。 According to the present invention, the processing load can be reduced in the case where the substantial single-layer structure is cut to complete the final product. According to this, first, it is possible to prevent the product from being deviated from the predetermined position of the cutting jig and scattering. Therefore, the yield can be improved at the time of manufacturing the product. Secondly, it is possible to prevent the occurrence of defects such as cracks and cracks in the product. Therefore, the quality of the product can be improved at the time of manufacturing the product.

在被切斷物為多層結構體的情形以及為實質的單層結構體的情形之其中之一中,本發明的製造裝置進行下述3 個動作。 In one of the case where the object to be cut is a multilayer structure and the case of a substantially single layer structure, the manufacturing apparatus of the present invention performs the following 3 Actions.

(1)於沿著第1方向的複數的切斷線中,旋轉刃切斷相當於被切斷物的全厚的部分。 (1) In the plurality of cutting lines along the first direction, the rotary blade cuts a portion corresponding to the full thickness of the object to be cut.

(2)於沿著與第1方向相交的第2方向之複數的切斷線中,旋轉刃切削被切斷物的全厚中的一部份厚度,藉此形成切削溝。 (2) In the plurality of cutting lines along the second direction intersecting the first direction, the rotating blade cuts a part of the thickness of the entire thickness of the object to be cut, thereby forming a cutting groove.

(3)於沿著第2方向形成的切削溝中,旋轉刃切斷被切斷物的全厚中的殘餘厚度的部分。 (3) In the cutting groove formed along the second direction, the rotary blade cuts a portion of the total thickness of the object to be cut.

上述的(1)~(3)的動作所進行的順序,可為動作(1)、動作(2)、動作(3)的順序,亦可為動作(2)、動作(1)、動作(3)的順序。 The order of the above operations (1) to (3) may be the order of the actions (1), (2), and (3), or the actions (2), (1), and actions (1). 3) The order.

於上述動作(2)中,旋轉刃切削被切斷物的全厚中上側的一部份厚度。於上述動作(3)中,旋轉刃切斷被切斷物的全厚中下側之殘餘厚度(從全厚於動作(2)中經切削移除一部分厚度之殘餘厚度)。因此,於動作(2)以及動作(3)的其中任一的情形中,與旋轉刃將被切端物的全厚一併切斷的情形相比較,旋轉刃與被切斷物所受的加工負荷降低。依此,於動作(2)中,能夠防止製品的上緣附近的破裂、裂痕等的不良情形的發生。於動作(3)中,能夠防止製品從切斷治具的規定位置偏離並飛散。 In the above operation (2), the rotary blade cuts a part of the thickness of the upper side of the full thickness of the object to be cut. In the above operation (3), the rotary blade cuts the residual thickness of the middle and lower sides of the full thickness of the object to be cut (the residual thickness of a part of the thickness is removed by cutting from the full thickness in the operation (2)). Therefore, in any of the operations (2) and (3), the rotary blade and the object to be cut are processed in comparison with the case where the rotary blade is cut by the full thickness of the cut end. The load is reduced. Accordingly, in the operation (2), it is possible to prevent occurrence of defects such as cracks and cracks in the vicinity of the upper edge of the product. In the operation (3), it is possible to prevent the product from being deviated from the predetermined position of the cutting jig and scattering.

在被切斷物具有更為大的硬度的情形或是被切斷物具有更為大的脆性的情形,換句話說,被切斷物具有更大的難切削性的情形中,本發明的製造裝置進行下述4個動作。 In the case where the object to be cut has a greater hardness or the case where the object to be cut has greater brittleness, in other words, in the case where the object to be cut has greater difficulty in cutting, the present invention The manufacturing apparatus performs the following four operations.

(1)於沿著第1方向的複數的切斷線中,旋轉刃切削被切斷物的全厚中的一部份厚度,藉此形成切削溝。 (1) In a plurality of cutting lines along the first direction, the rotary blade cuts a part of the thickness of the entire thickness of the object to be cut, thereby forming a cutting groove.

(2)於沿著第1方向形成的切削溝中,旋轉刃切斷被切斷物的全厚中的殘餘厚度的部分。 (2) In the cutting groove formed along the first direction, the rotary blade cuts off a portion of the total thickness of the object to be cut.

(3)於沿著與第1方向相交的第2方向之複數的切斷線中,旋轉刃切削被切斷物的全厚中的一部份厚度,藉此形成切削溝。 (3) In the plurality of cutting lines along the second direction intersecting the first direction, the rotary blade cuts a part of the thickness of the entire thickness of the object to be cut, thereby forming a cutting groove.

(4)於沿著第2方向形成的切削溝中,旋轉刃切斷被切斷物的全厚中的殘餘厚度的部分。 (4) In the cutting groove formed along the second direction, the rotary blade cuts a portion of the remaining thickness of the entire thickness of the object to be cut.

上述的4個動作適用於被切斷物為多層結構體的情形以及為實質的單層結構體的情形之其中之一。上述的(1)~(4)的動作所進行的順序只要都滿足其次的2個順序即可。第1,於動作(1)之後進行動作(2)。第2,於動作(3)之後進行動作(4)。由藉由旋轉機構30之切斷用台14的旋轉次數(請參照第5A圖~第8圖)最少的考量,動作的順序較佳是動作(1)、動作(2)、動作(3)、動作(4)的順序,或是動作(3)、動作(4)、動作(1)、動作(2)的順序。藉由適切的進行上述4個動作,能夠防止製品的上緣附近的破裂、裂痕等的發生,以及防止製品從切斷治具的規定位置偏離並飛散等的發生。 The above four actions are applied to one of the case where the object to be cut is a multilayer structure and the case of a substantially single layer structure. The order of the above operations (1) to (4) may be performed in accordance with the second order. First, the action (2) is performed after the action (1). Second, the action (4) is performed after the action (3). The order of operation is preferably the action (1), the action (2), and the action (3) by the minimum number of rotations of the cutting table 14 by the rotation mechanism 30 (refer to FIGS. 5A to 8). The order of the action (4), or the order of the action (3), the action (4), the action (1), and the action (2). By performing the above four operations as appropriate, it is possible to prevent the occurrence of cracks, cracks, and the like in the vicinity of the upper edge of the product, and to prevent the occurrence of scattering or scattering of the product from the predetermined position of the cutting jig.

綜合而言,於被切斷物具有大的難切斷性的情形,本發明的切斷裝置進行下述的動作。於沿著第1方向的複數的切斷線中,旋轉刃藉由N階段的切削以切斷被切斷物(N為N≧1的整數)。於沿著第2方向的複數的切斷線中,旋轉刃藉由M階段的切削以切斷被切斷物(M為M≧2的整數)。在被切斷物的難切削性因切削的方向而異的情形,可以使沿著具有大的難切削性之方向切斷的階段數,大於沿著具有小的難切削性之方向切斷的階段數。 In general, in the case where the object to be cut has a large difficulty in cutting property, the cutting device of the present invention performs the following operation. In the plurality of cutting lines along the first direction, the rotating blade cuts the object to be cut by N-stage cutting (N is an integer of N≧1). In the plurality of cutting lines along the second direction, the rotating blade cuts the object to be cut by M-stage cutting (M is an integer of M≧2). When the difficult-to-cut property of the object to be cut differs depending on the direction of cutting, the number of stages cut in a direction having a large hard-working property can be made larger than a direction cut along a direction having a small hard-to-cut property. The number of stages.

雖然對於本發明的實施型態進行說明,應認為本次所揭示的實施型態的全部內容為例示而不造成任何限制。本發明的範圍如申請專利範圍所示,並意欲包含與所請求的範圍均等的意義以及範圍內的全部的變更。 While the embodiments of the present invention have been described, the entire contents of the embodiments disclosed herein are considered to be illustrative and not restrictive. The scope of the present invention is intended to be embraced by the scope of the claims

1‧‧‧QFN基板(被切斷物) 1‧‧‧QFN substrate (cut object)

12‧‧‧旋轉刃 12‧‧‧Rotary blade

13‧‧‧QFN製品(製品) 13‧‧‧QFN products (products)

14‧‧‧切斷用台(台) 14‧‧‧Severance desk (set)

27‧‧‧製造裝置 27‧‧‧Manufacture of equipment

28‧‧‧基板供給機構 28‧‧‧Substrate supply mechanism

29‧‧‧移動機構 29‧‧‧Mobile agencies

30‧‧‧旋轉機構 30‧‧‧Rotating mechanism

31‧‧‧心軸 31‧‧‧ mandrel

32‧‧‧檢查用台 32‧‧‧Checking desk

33‧‧‧切斷完畢的QFN基板 33‧‧‧Cuted QFN substrate

34‧‧‧拖盤 34‧‧‧Tray

A‧‧‧基板供給模組 A‧‧‧Substrate supply module

B‧‧‧基板切斷模組 B‧‧‧Substrate cutting module

C‧‧‧檢查模組 C‧‧‧Check module

CTL‧‧‧控制部 CTL‧‧‧Control Department

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

θ‧‧‧角度 θ ‧‧‧ angle

Claims (12)

一種製造裝置,使用於將具有沿著第1方向的複數的第1切斷線、沿著與第1方向相交的第2方向的複數的第2切斷線以及藉由前述第1切斷線與前述第2切斷線而個別包圍的複數區域之被切斷物切斷,藉此製造與前述複數區域個別對應的複數製品之際,該製造裝置包括:載置前述被切斷物的台;切斷前述被切斷物的旋轉刃;使前述台與前述旋轉刃以相對的移動速度而相對移動的移動機構;以及至少控制前述旋轉刃的旋轉以及前述移動機構所致的移動之控制部,前述控制部以使前述製造裝置進行下述動作的方式控制前述製造裝置:(1)於前述複數的第1切斷線中,前述旋轉刃藉由第1移動速度切斷前述被切斷物之第1動作;(2)於前述複數的第2切斷線中,前述旋轉刃藉由第2移動速度切削前述被切斷物的全厚中的一部份厚度,以形成切削溝之第2動作;以及(3)於前述切削溝中,前述旋轉刃藉由第3移動速度切斷前述被切斷物的全厚中的殘餘厚度之第3動作。 A manufacturing apparatus for use a first cutting line having a plurality of first directions along a first direction, a second cutting line along a second direction intersecting with a first direction, and a first cutting line by the first cutting line When the object to be cut in the plurality of regions which are individually surrounded by the second cutting line is cut, and the plurality of products corresponding to the plurality of regions are individually manufactured, the manufacturing apparatus includes a table on which the object to be cut is placed a cutting blade that cuts the object to be cut, a moving mechanism that relatively moves the table and the rotating blade at a relative moving speed, and a control unit that controls at least the rotation of the rotating blade and the movement caused by the moving mechanism The control unit controls the manufacturing apparatus such that the manufacturing apparatus performs the following operation: (1) in the plurality of first cutting lines, the rotating blade cuts the object to be cut by the first moving speed (1) In the plurality of second cutting lines, the rotating blade cuts a part of a thickness of the entire thickness of the object to be cut by a second moving speed to form a cutting groove 2 actions; and (3) the aforementioned cut In the groove, the third operation of cutting the remaining thickness of the full thickness of the object to be cut by the third moving speed is performed. 如申請專利範圍第1項所述的製造裝置,其中前述被切斷物包含基板、以及於前述基板的前述複數區域中所個別設置的功能元件。 The manufacturing apparatus according to claim 1, wherein the object to be cut includes a substrate and functional elements individually provided in the plurality of regions of the substrate. 如申請專利範圍第1項所述的製造裝置,其中前述被切斷物包含基板、於前述基板的前述複數區域中所個別設置的功能元件、以及保護前述功能元件的密封樹脂。 The manufacturing apparatus according to claim 1, wherein the object to be cut includes a substrate, a functional element individually provided in the plurality of regions of the substrate, and a sealing resin that protects the functional element. 如申請專利範圍第3項所述的製造裝置,其中前述基板為引線框,前述旋轉刃的厚度大於前述引線框所含的連接桿的寬度。 The manufacturing apparatus according to claim 3, wherein the substrate is a lead frame, and a thickness of the rotating blade is larger than a width of a connecting rod included in the lead frame. 如申請專利範圍第4項所述的製造裝置,其中前述複數製品為四方扁平無鉛封裝(Quad Flat Non-leaded Package,QFN)。 The manufacturing apparatus according to claim 4, wherein the plurality of products are Quad Flat Non-leaded Package (QFN). 如申請專利範圍第1項所述的製造裝置,其中前述第3移動速度與前述第2移動速度相同或遲於前述第2移動速度。 The manufacturing apparatus according to claim 1, wherein the third moving speed is the same as or shorter than the second moving speed. 一種製造方法,將具有沿著第1方向的複數的第1切斷線、沿著與第1方向相交的第2方向的複數的第2切斷線以及藉由前述第1切斷線與前述第2切斷線而個別包圍的複數區域之被切斷物切斷,藉此製造與前述複數區域個別對應的複數製品,包含下述步驟:準備具有載置前述被切斷物的台、切斷前述被切斷物的旋轉刃,使前述台與前述旋轉刃以相對的移動速度而相對移動的移動機構之製造裝置的步驟;於前述複數的第1切斷線中,前述旋轉刃藉由第1移動速度切斷前述被切斷物之第1步驟;於前述複數的第2切斷線中,前述旋轉刃藉由第2移動速度切削被前述切斷物的全厚中的一部份厚度,以形成切削溝之第2步驟;以及 於前述切削溝中,前述旋轉刃藉由第3移動速度切斷前述被切斷物的全厚中的殘餘厚度之第3步驟。 A manufacturing method of a plurality of first cutting lines along a first direction, a second cutting line along a second direction intersecting with a first direction, and the first cutting line and the aforementioned The object to be cut in the plurality of regions surrounded by the second cutting line is cut, thereby producing a plurality of products corresponding to the plurality of regions, and includes the steps of preparing a table having the object to be cut and cutting a step of manufacturing a moving mechanism that breaks a rotating blade of the object to be cut and relatively moves the table and the rotating blade at a relative moving speed; and in the plurality of first cutting lines, the rotating blade is a first step of cutting the object to be cut by the first moving speed; and in the plurality of second cutting lines, the rotating blade cuts a part of the full thickness of the cut object by the second moving speed Thickness to form a second step of the cutting groove; In the cutting groove, the third step of cutting the remaining thickness of the entire thickness of the object to be cut by the third moving speed is the third step. 如申請專利範圍第7項所述的製造方法,其中前述被切斷物包含基板、以及於前述基板的前述複數區域中所個別設置的功能元件。 The manufacturing method according to claim 7, wherein the object to be cut includes a substrate and functional elements individually provided in the plurality of regions of the substrate. 如申請專利範圍第7項所述的製造方法,其中前述被切斷物包含基板、於前述基板的前述複數區域中所個別設置的功能元件、以及保護前述功能元件的密封樹脂。 The manufacturing method according to claim 7, wherein the object to be cut includes a substrate, a functional element individually provided in the plurality of regions of the substrate, and a sealing resin that protects the functional element. 如申請專利範圍第9項所述的製造方法,其中前述基板為引線框,前述旋轉刃的厚度大於前述引線框所含的連接桿的寬度。 The manufacturing method according to claim 9, wherein the substrate is a lead frame, and a thickness of the rotating blade is larger than a width of a connecting rod included in the lead frame. 如申請專利範圍第10項所述的製造方法,其中前述複數製品為四方扁平無鉛封裝(Quad Flat Non-leaded Package,QFN)。 The manufacturing method according to claim 10, wherein the plurality of products are Quad Flat Non-leaded Package (QFN). 如申請專利範圍第7項所述的製造方法,其中前述第3移動速度與前述第2移動速度相同或遲於前述第2移動速度。 The manufacturing method according to claim 7, wherein the third moving speed is the same as or shorter than the second moving speed.
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