JP2006245459A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that the cut waste of a gate part metal, provided on a substrate scatters on a solder ball surface and causes a short-circuit defect between the solder balls of a semiconductor device, in a cutting process of making the substrate provided with a plurality of semiconductor chip loading regions into the individual pieces of a semiconductor device single body. <P>SOLUTION: By a rotary blade 10, a circuit board 1 and a sealing resin 2 resin-sealed by a batch formation method are cut altogether for each semiconductor chip loading region. At cutting, a suction nozzle 15 connected to a vacuum pump is provided near a cutting part by the rotary blade 10, the cut waste of the gate part metal generated at the time of cutting is sucked and removed; and the short-circuit defect between the solder balls of the semiconductor device due to the cut waste of the gate part metal is prevented. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  In manufacturing a resin-encapsulated semiconductor device such as BGA (Ball Grid Array) or LGA (Land Grid Array), the present invention collectively encapsulates a plurality of semiconductor chip mounting regions on a substrate, and encapsulates the resin. The present invention relates to a method for manufacturing a resin-encapsulated semiconductor device in which a continuous body of stopped semiconductor devices is singulated.

  In recent years, in order to cope with downsizing of portable electronic devices and the like, high-density mounting of semiconductor components such as resin-encapsulated semiconductor devices is required, and accordingly, downsizing and thinning of semiconductor devices are progressing. In order to meet such demands, recently, a resin-sealed semiconductor device having a QFN (Quad Flat NonLeaded) structure in which leads are exposed on the back surface of the semiconductor device as a small and thin resin-sealed semiconductor device has been put on the market. It has been thrown. As a manufacturing method thereof, a manufacturing method called “collective molding method” has been developed in which a plurality of semiconductor chip mounting regions of a lead frame having a plurality of semiconductor chip mounting regions are continuously resin-sealed. This method has been developed not only for lead frame types but also for resin-encapsulated semiconductor devices using circuit boards.

  FIG. 11 to FIG. 13 are diagrams showing respective steps of a conventional method for manufacturing a resin-encapsulated semiconductor device by a “batch molding method” using a circuit board. FIG. 11A is a diagram of a circuit board having a plurality of semiconductor chip mounting regions as viewed from the side opposite to the semiconductor chip mounting surface, and FIG. 11B is a diagram of the circuit board as viewed from the semiconductor chip mounting surface side. FIG.

  As shown in FIG. 11A, the circuit board 1 is provided with an inner layer wiring (not shown) for each semiconductor chip mounting region, and an external electrode 12 for electrical connection with the outside is formed. . A defect mark 3 for recording a defective semiconductor chip mounting area in the circuit board 1 is formed at the end of the circuit board 1.

  Next, as shown in FIG. 11B, an adhesive such as a silver paste is applied to each semiconductor chip mounting region of the circuit board 1, and after mounting the semiconductor chip 8, it is bonded with the adhesive. The semiconductor chip mounting surface of the circuit board 1 is later sealed with a sealing resin. However, the sealing resin for the gate portion is an unnecessary portion that is not used in a product, and thus needs to be peeled off. Therefore, nickel / gold plating is applied on the copper pattern of the gate portion of the circuit board 1 to form the gate metal 7, and the sealing resin is peeled off by utilizing the low adhesion between the sealing resin and the gold plating. ing.

  Next, as shown in FIG. 11C, the electrode of the semiconductor chip 8 and the electrode of the circuit board 1 are electrically connected by a thin metal wire 9.

  Next, as shown in FIG. 12A, the surface on which the plurality of semiconductor chips of the circuit board 1 are mounted is collectively sealed with a sealing resin 2 by a transfer molding method.

  Next, as shown in FIG. 12B, the solder balls 5 are mounted on the external electrodes 12 formed on the surface of the circuit board 1 opposite to the semiconductor chip mounting surface.

  Next, as shown in FIG. 12C, the circuit board 1 is attached on the dicing tape 13 made of UV curable resin or the like stretched on the ring 14 with the solder ball 5 mounting surface as the upper surface.

  Next, as shown in FIG. 13A, the circuit board 1 and the sealing resin 2 are collectively cut for each semiconductor chip mounting region by the rotating blade 10.

  Next, as shown in FIG. 13B, the circuit board 1 is divided into individual semiconductor devices 4 to manufacture a resin-encapsulated semiconductor device.

As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
JP 2004-214233 A

  However, in the conventional method of manufacturing a semiconductor device, in the step of cutting the circuit board, the gate part metal provided on the substrate for cutting off the sealing resin after resin sealing is also cut. There was a problem in that cutting scraps were generated, and the cutting scraps of the gate part metal were scattered on the solder ball surface, causing a short circuit between the solder balls of the semiconductor device.

  In order to solve the above-described problems, a manufacturing method of a semiconductor device according to the present invention includes a plurality of semiconductor chip mounting regions and a sealing resin that is outside the plurality of semiconductor chip mounting regions on a surface on which the plurality of semiconductor chips are mounted. A step of preparing a substrate made of a gate portion serving as a distribution route of the gate portion and a gate portion metal formed on the gate portion, a step of mounting the semiconductor chip in the semiconductor chip mounting region, and an electrode of the semiconductor chip And electrically connecting the electrodes of the substrate, a resin sealing step of sealing the plurality of semiconductor chips with a continuous integral resin, and the continuous integral resin and the substrate. Cut into individual semiconductor devices by cutting into each mounting area, and sucking the metal scraps generated at the time of cutting by a suction nozzle connected to a vacuum pump. Consisting of a degree.

  By such a manufacturing method, the gate part metal cutting waste generated by cutting is sucked and removed, and the gate part metal cutting waste is prevented from being scattered on the solder ball surface, and between the solder balls of the semiconductor device. Can prevent short circuit.

  A plurality of semiconductor chip mounting regions; a gate portion that is outside the plurality of semiconductor chip mounting regions on a surface on which the plurality of semiconductor chips are mounted; and serves as a distribution path for a sealing resin; and is formed on the gate portion. Preparing a substrate made of the gate metal, mounting the semiconductor chip in the semiconductor chip mounting region, electrically connecting the electrode of the semiconductor chip and the electrode of the substrate, A resin sealing step of sealing a plurality of semiconductor chips and a cutting region of the gate metal cut in the step of dividing into a single semiconductor device with a continuous integral resin; and the continuous integral resin and the And a step of cutting the substrate into each semiconductor chip mounting region and dividing the substrate into individual semiconductor devices.

  By such a manufacturing method, the gate metal is covered with the sealing resin, thereby suppressing the generation of cutting waste of the gate metal and the solder of the semiconductor device due to the scattering of the metal cutting scrap on the solder ball surface. Short circuit between balls can be prevented.

  A plurality of semiconductor chip mounting regions; a gate portion that is outside the plurality of semiconductor chip mounting regions on a surface on which the plurality of semiconductor chips are mounted; A step of preparing a substrate made of gate portion metal formed by arranging metal pieces, a step of mounting the semiconductor chip in the semiconductor chip mounting region, and an electrode of the semiconductor chip and an electrode of the substrate are electrically connected Connecting the plurality of semiconductor chips with a continuous integral resin, and cutting the continuous integral resin and the substrate into each semiconductor chip mounting region to form a semiconductor And a step of dividing the device into individual pieces.

  According to such a manufacturing method, the cutting scraps of the gate metal are shorter than the distance between the solder balls, and a short circuit between the solder balls of the semiconductor device due to the scattering of the cutting scraps on the solder ball surface can be prevented.

  The method for manufacturing a semiconductor device according to the present invention exhibits an effect of preventing the semiconductor device from being short-circuited by a gate metal scrap formed on the gate for resin injection.

  First, a first embodiment of a method for manufacturing a semiconductor device of the present invention will be described with reference to the drawings.

  1 to 3 are diagrams showing each step of the method of manufacturing the semiconductor device according to the present embodiment. FIG. 1A is a view of the circuit board as viewed from the side opposite to the semiconductor chip mounting surface, and FIG. 1B is a view of the circuit board as viewed from the semiconductor chip mounting surface side.

  As shown in FIG. 1A, the circuit board 1 is formed with a plurality of semiconductor chip mounting regions, and an inner layer wiring (not shown) is applied to each semiconductor chip mounting region to make electrical connection with the outside. The external electrode 12 is formed. The external electrodes 12 are formed such that the distance between the centers of adjacent external electrodes 12 is 0.3 to 1.0 [mm]. In the present embodiment, a defect mark 3 for indicating a defective semiconductor chip mounting area included in a plurality of semiconductor chip mounting areas in the circuit board 1 is formed at the end of the circuit board 1.

  Next, as shown in FIG. 1B, an adhesive (not shown) such as a silver paste in which silver particles are mixed in a liquid resin is applied to each semiconductor chip mounting region of the semiconductor chip mounting surface of the circuit board 1, The semiconductor chip 8 is mounted so that the surface opposite to the electrode formation surface of the semiconductor chip 8 faces the circuit board 1, and then bonded with an adhesive. The adhesive used at this time may be a conductive material such as silver paste or an insulating material such as polyimide. Since the semiconductor chip mounting surface of the circuit board 1 is later sealed with a sealing resin, a gate portion for resin injection is formed along one side of the periphery of the semiconductor chip mounting surface. In the gate portion, a gate portion metal 7 is formed so that unnecessary resin that is not used in a product can be easily peeled off after resin sealing.

  This gate part metal is arranged along one side of the periphery of the semiconductor chip mounting surface where the gate for resin injection is arranged in the region between the end of the circuit board and the resin sealing area, and has a thickness. Is 5 to 20 [μm]. Thereby, the gate used as the distribution route of sealing resin at the sealing process can be arranged without being restricted by the position on the circuit board. Since the gate metal has a structure in which nickel / gold plating is formed on a copper pattern on the circuit board, the adhesion between the sealing resin and the gold plating is lowered, and the sealing resin is easily peeled off. Has an effect.

  Next, as shown in FIG. 1C, the electrode of the semiconductor chip 8 and the electrode of the circuit board 1 are electrically connected by a thin metal wire 9. In this semiconductor chip mounting process and the connection process between the semiconductor chip electrode and the circuit board electrode, the semiconductor chip is mounted so that the electrode formation surface of the semiconductor chip and the circuit board face each other, and the flip-flop is performed without using a metal thin wire. You may electrically connect by a chip construction method. Furthermore, a plurality of semiconductor chips can be mounted in one semiconductor chip mounting area. When mounting a plurality of semiconductor chips, the semiconductor chip can be mounted at various positions in the semiconductor chip mounting area. May be stacked in multiple stages and mounted in the semiconductor chip mounting region. When stacking and mounting semiconductor chips in multiple stages, the lowermost semiconductor chip is electrically connected to the circuit board by a thin metal wire or flip chip method, and the other semiconductor chip is another semiconductor chip and a fine metal wire or flip chip method. Or may be electrically connected to the circuit board by a thin metal wire.

  Next, as shown in FIG. 2A, the surface on which the plurality of semiconductor chips of the circuit board 1 are mounted is collectively sealed with a sealing resin 2 by a transfer molding method. The thickness of the sealing resin 2 at this time is 0.2 to 1.0 [mm].

  Next, as shown in FIG. 2B, a solder ball having a diameter of 0.2 to 0.6 [mm] is formed on the external electrode 12 formed on the surface opposite to the semiconductor chip mounting surface of the circuit board 1. 5 is installed.

  Next, as shown in FIG.2 (c), the circuit board 1 consists of UV hardening type resin etc. which were affixed on the ring 14, and the thickness is 0.17-0.23 [mm] on the dicing tape 13; Affixing with the solder ball 5 mounting surface as the upper surface. The ring used at this time may have various shapes such as a polygon and an ellipse in addition to a circular one. Moreover, you may affix a some circuit board about the dicing tape in one ring. The order of the solder ball mounting process and the attaching process to the dicing tape may be reversed.

  Next, as shown in FIG. 3A, the circuit board 1 and the sealing resin 2 are collectively cut for each semiconductor chip mounting region by the rotating blade 10. At the time of the cutting, as shown in FIG. 3B, a suction nozzle 15 connected to a vacuum pump is provided near the cutting portion by the rotating blade 10, and the metal cutting waste generated at the time of cutting is sucked. And remove.

  The rotating blade used here has a thickness of 0.2 to 0.3 [mm] and a diameter of 54 to 56 [mm], and diamond is a bond material such as resin, metal or electroforming. Use a combination of the two. The suction nozzle used at this time is desirably in the vicinity of the cutting portion by the rotating blade, and is preferably moved as the rotating blade moves. Further, the suction nozzle may suck only when the rotating blade cuts the gate portion metal, or may suck the whole time during the cutting process. The diameter of the suction nozzle is 0.2 to 0.3 [mm], which is the same as the dicing lane width, that is, the thickness of the rotating blade, and the suction nozzle is made of metal, vinyl or glass. The suction nozzle is connected to a vacuum pump and has sufficient pressure to reliably suck the cutting waste. In the present embodiment, the suction pressure is 1.5 to 10 [kPa].

  Here, the circuit board is attached to the dicing tape, and the semiconductor device is separated into pieces by tape type package dicing in which cutting with a rotating blade is performed. However, the jig that holds the circuit board directly with a jig and performs cutting with the rotating blade is used. System package dicing may be used.

  Next, as shown in FIG. 3C, the circuit board 1 is divided into individual semiconductor devices 4 to manufacture a resin-encapsulated semiconductor device.

  A feature of the method for manufacturing a semiconductor device according to the present embodiment is that the metal scrap generated by cutting is sucked and removed by a suction nozzle. Therefore, it is possible to prevent the metal scrap from the gate portion generated by cutting from being scattered on the solder ball surface and to prevent a short circuit between the solder balls of the semiconductor device.

  Next, a second embodiment of the semiconductor device manufacturing method of the present invention will be described with reference to the drawings.

  4 to 6 are diagrams showing each step of the method of manufacturing the semiconductor device according to the present embodiment. 4A is a view of the circuit board as viewed from the side opposite to the semiconductor chip mounting surface, and FIG. 4B is a view of the circuit board as viewed from the semiconductor chip mounting surface side.

  As shown in FIG. 4A, the circuit board 1 is formed with a plurality of semiconductor chip mounting regions, and an inner layer wiring (not shown) is applied to each semiconductor chip mounting region to make electrical connection with the outside. The external electrode 12 is formed. The external electrodes 12 are formed such that the distance between the centers of adjacent external electrodes 12 is 0.3 to 1.0 [mm]. In the present embodiment, a defect mark 3 for indicating a defective semiconductor chip mounting area included in a plurality of semiconductor chip mounting areas in the circuit board 1 is formed at the end of the circuit board 1.

  Next, as shown in FIG. 4 (b), an adhesive (not shown) such as a silver paste in which silver particles are mixed in a liquid resin is applied to each semiconductor chip mounting region of the semiconductor chip mounting surface of the circuit board 1, The semiconductor chip 8 is mounted so that the surface opposite to the electrode formation surface of the semiconductor chip 8 faces the circuit board 1, and then bonded with an adhesive. The adhesive used at this time may be a conductive material such as silver paste or an insulating material such as polyimide. Since the semiconductor chip mounting surface of the circuit board 1 is later sealed with a sealing resin, a gate portion for resin injection is formed along one side of the periphery of the semiconductor chip mounting surface. In the gate portion, a gate portion metal 7 is formed so that unnecessary resin that is not used in a product can be easily peeled off after resin sealing.

  This gate part metal is arranged along one side of the periphery of the semiconductor chip mounting surface where the gate for resin injection is arranged in the region between the end of the circuit board and the resin sealing area, and has a thickness. Is 5 to 20 [μm]. Thereby, the gate used as the distribution route of sealing resin at the sealing process can be arranged without being restricted by the position on the circuit board. Since the gate metal has a structure in which nickel / gold plating is formed on a copper pattern on the circuit board, the adhesion between the sealing resin and the gold plating is lowered, and the sealing resin is easily peeled off. Has an effect.

  Next, as shown in FIG. 4C, the electrode of the semiconductor chip 8 and the electrode of the circuit board 1 are electrically connected by a thin metal wire 9. In this semiconductor chip mounting process and the connection process between the semiconductor chip electrode and the circuit board electrode, the semiconductor chip is mounted so that the electrode formation surface of the semiconductor chip and the circuit board face each other, and the flip-flop is performed without using a metal thin wire. You may electrically connect by a chip construction method. Furthermore, a plurality of semiconductor chips can be mounted in one semiconductor chip mounting area. When mounting a plurality of semiconductor chips, the semiconductor chip can be mounted at various positions in the semiconductor chip mounting area. May be stacked in multiple stages and mounted in the semiconductor chip mounting region. When stacking and mounting semiconductor chips in multiple stages, the lowermost semiconductor chip is electrically connected to the circuit board by a thin metal wire or flip chip method, and the other semiconductor chip is another semiconductor chip and a fine metal wire or flip chip method. Or may be electrically connected to the circuit board by a thin metal wire.

  Next, as shown in FIG. 5A, the surface of the circuit board 1 on which a plurality of semiconductor chips are mounted is collectively sealed with a sealing resin 2 by a transfer molding method, and further changed into individual semiconductor devices later. The dicing lane 6, which is a cutting area between the circuit board 1 and the gate metal 7 cut in the cutting step, is also sealed with the sealing resin 2. The thickness of the sealing resin 2 at this time is 0.2 to 1.0 [mm].

  At this time, the plurality of semiconductor chip mounting regions and the dicing lane 6 may be simultaneously resin-sealed, or the dicing lane 6 may be resin-sealed after the plurality of semiconductor chip mounting regions are resin-sealed. As described above, when the resin sealing of the dicing lane is performed after the resin sealing of the plurality of semiconductor chip mounting regions, the resin sealing of the dicing lane is a resin sealing method such as printing sealing and coating in addition to the transfer molding method. May be used.

  Further, as shown in FIG. 5B, the entire semiconductor chip mounting surface of the circuit board 1 may be sealed with the sealing resin 2 so as to include the dicing lane 6.

  Next, as shown in FIG. 5C, solder balls 5 having a diameter of 0.2 to 0.6 [mm] are formed on the external electrodes 12 formed on the surface opposite to the semiconductor chip mounting surface of the circuit board 1. Mount.

  Next, as shown to Fig.6 (a), the circuit board 1 consists of UV curable resin etc. which were affixed on the ring 14, and on the dicing tape 13 whose thickness is 0.17-0.23 [mm], Affixing with the solder ball 5 mounting surface as the upper surface. The ring used at this time may have various shapes such as a polygon and an ellipse in addition to a circular one. Moreover, you may affix a some circuit board about the dicing tape in one ring. The order of the solder ball mounting process and the attaching process to the dicing tape may be reversed.

  Next, as shown in FIG. 6B, the circuit board 1 and the sealing resin 2 are collectively cut for each semiconductor chip mounting region by the rotating blade 10. At the time of the cutting, a suction nozzle connected to a vacuum pump may be provided near the cutting portion by the rotating blade, and the gate metal scrap generated at the time of cutting may be sucked and removed (not shown). .

  The rotating blade used here has a thickness of 0.2 to 0.3 [mm] and a diameter of 54 to 56 [mm], and diamond is a bond material such as resin, metal or electroforming. Use a combination of the two. The suction nozzle used at this time is desirably in the vicinity of the cutting portion by the rotating blade, and is preferably moved as the rotating blade moves. Further, the suction nozzle may suck only when the rotating blade cuts the gate portion metal, or may suck the whole time during the cutting process. The diameter of the suction nozzle is 0.2 to 0.3 [mm], which is the same as the dicing lane width, that is, the thickness of the rotating blade, and the suction nozzle is made of metal, vinyl or glass. The suction nozzle is connected to a vacuum pump and has a pressure sufficient to reliably suck cutting waste.

  Here, the circuit board is attached to the dicing tape, and the semiconductor device is separated into pieces by tape type package dicing in which cutting with a rotating blade is performed. However, the jig that directly holds the circuit board with a jig and performs cutting with the rotating blade. System package dicing may be used.

  Next, as shown in FIG. 6C, the circuit board 1 is divided into individual semiconductor devices 4 to manufacture a resin-encapsulated semiconductor device.

  A feature of the manufacturing method of the semiconductor device according to the present embodiment is that the cutting region of the gate metal is also resin-sealed. Therefore, by covering the gate part metal with the sealing resin, the generation of the scrap metal of the gate part metal is suppressed, and the short circuit between the solder balls of the semiconductor device due to the scattering of the gate part metal cutting waste onto the solder ball surface is prevented. be able to.

  Next, a third embodiment of the method for manufacturing a semiconductor device of the present invention will be described with reference to the drawings.

  7 to 10 are views showing each step of the method of manufacturing the semiconductor device of the present embodiment. 7A is a view of the circuit board as viewed from the side opposite to the semiconductor chip mounting surface, and FIG. 7B is a view of the circuit board as viewed from the semiconductor chip mounting surface side.

  As shown in FIG. 7A, the circuit board 1 is formed with a plurality of semiconductor chip mounting regions, and an inner layer wiring (not shown) is applied to each semiconductor chip mounting region to make electrical connection with the outside. The external electrode 12 is formed. The external electrodes 12 are formed such that the distance between the centers of adjacent external electrodes 12 is 0.3 to 1.0 [mm]. In the present embodiment, a defect mark 3 for indicating a defective semiconductor chip mounting area included in a plurality of semiconductor chip mounting areas in the circuit board 1 is formed at the end of the circuit board 1.

  Next, as shown in FIG. 7B, an adhesive (not shown) such as a silver paste in which silver particles are mixed in a liquid resin is applied to each semiconductor chip mounting region of the semiconductor chip mounting surface of the circuit board 1, The semiconductor chip 8 is mounted so that the surface opposite to the electrode formation surface of the semiconductor chip 8 faces the circuit board 1, and then bonded with an adhesive. The adhesive used at this time may be a conductive material such as silver paste or an insulating material such as polyimide. Since the semiconductor chip mounting surface of the circuit board 1 is later sealed with a sealing resin, a gate portion for resin injection is formed along one side of the periphery of the semiconductor chip mounting surface. In the gate portion, a gate portion metal 7 is formed so that unnecessary resin that is not used in a product can be easily peeled off after resin sealing.

  This gate part metal is arranged along one side of the periphery of the semiconductor chip mounting surface where the gate for resin injection is arranged in the region between the end of the circuit board and the resin sealing area, and has a thickness. Is 5 to 20 [μm]. Thereby, the gate used as the distribution route of sealing resin at the sealing process can be arranged without being restricted by the position on the circuit board.

  Next, the gate metal will be described in detail.

  FIG. 7C is an enlarged view of the gate portion metal 7 of the circuit board 1. The gate metal 7 is formed by arranging a plurality of metal pieces 11 that are finer than the distance between the ends of the solder balls. Regarding the size of this metal piece, for example, if the diameter of a solder ball is 0.3 [mm] and the distance between centers of adjacent solder balls is 0.5 [mm], The distance between the end portions is 0.2 [mm], and if the length of the metal scrap of the gate portion is less than 0.2 [mm], no short-circuit occurs due to one cutting scrap. Therefore, the metal piece in this embodiment has one side of less than 0.2 [mm], preferably about 0.1 [mm]. The fine metal pieces may be in contact with each other as long as they are independently formed. As shown in FIG. 7C, the rectangular metal pieces 11 are formed in a lattice pattern on the gate portion of the circuit board 1. In the case where the gate portion metal 7 is formed by arranging the cylindrical metal piece 11 on the gate portion of the circuit board 1 to form the gate portion metal 7 as shown in FIG. It does not matter if you are.

  Since the gate metal has a structure in which nickel / gold plating is formed on a copper pattern on the circuit board, the adhesion between the sealing resin and the gold plating is lowered, and the sealing resin is easily peeled off. Has an effect.

  Further, the present embodiment is not limited to the gate portion metal, but can be applied to other metal patterns on the circuit board, for example, various recognition marks, and the same effect can be obtained.

  Next, as shown in FIG. 8B, the electrode of the semiconductor chip 8 and the electrode of the circuit board 1 are electrically connected by a thin metal wire 9. In this semiconductor chip mounting process and the connection process between the semiconductor chip electrode and the circuit board electrode, the semiconductor chip is mounted so that the electrode formation surface of the semiconductor chip and the circuit board face each other, and the flip-flop is performed without using a metal thin wire. You may electrically connect by a chip construction method. Furthermore, a plurality of semiconductor chips can be mounted in one semiconductor chip mounting area. When mounting a plurality of semiconductor chips, the semiconductor chip can be mounted at various positions in the semiconductor chip mounting area. May be stacked in multiple stages and mounted in the semiconductor chip mounting region. When stacking and mounting semiconductor chips in multiple stages, the lowermost semiconductor chip is electrically connected to the circuit board by a thin metal wire or flip chip method, and the other semiconductor chip is another semiconductor chip and a fine metal wire or flip chip method. Or may be electrically connected to the circuit board by a thin metal wire.

  Next, as shown in FIG. 8C, the surface of the circuit board 1 on which the plurality of semiconductor chips are mounted is collectively sealed with a sealing resin 2 by a transfer molding method. The thickness of the sealing resin 2 at this time is 0.2 to 1.0 [mm].

  At this time, a dicing lane that is a cutting region between the circuit board 1 and the gate metal 7 that is cut in a cutting process for separating the semiconductor device into individual pieces may be sealed with a sealing resin. The plurality of semiconductor chip mounting regions and the dicing lane may be simultaneously resin-sealed, or the dicing lanes may be resin-sealed after the plurality of semiconductor chip mounting regions are resin-sealed. As described above, when the resin sealing of the dicing lane is performed after the resin sealing of the plurality of semiconductor chip mounting regions, the resin sealing of the dicing lane is a resin sealing method such as printing sealing and coating in addition to the transfer molding method. May be used. Further, the entire semiconductor chip mounting surface of the circuit board may be resin-sealed so as to include the dicing lane (not shown).

  Next, as shown in FIG. 9A, a solder ball having a diameter of 0.2 to 0.6 [mm] is formed on the external electrode 12 formed on the surface opposite to the semiconductor chip mounting surface of the circuit board 1. 5 is installed.

  Next, as shown in FIG.9 (b), the circuit board 1 consists of UV hardening type resin etc. which were affixed on the ring 14, and the thickness is 0.17 to 0.23 [mm] on the dicing tape 13; Affixing with the solder ball 5 mounting surface as the upper surface. The ring used at this time may have various shapes such as a polygon and an ellipse in addition to a circular one. Moreover, you may affix a some circuit board about the dicing tape in one ring. The order of the solder ball mounting process and the attaching process to the dicing tape may be reversed.

  Next, as shown in FIG. 9C, the circuit board 1 and the sealing resin 2 are collectively cut for each semiconductor chip mounting region by the rotating blade 10. At the time of the cutting, a suction nozzle 15 connected to a vacuum pump may be provided near the cutting portion by the rotary blade 10, and the gate metal scrap generated at the time of cutting may be sucked and removed (not shown). )

  The rotating blade used here has a thickness of 0.2 to 0.3 [mm] and a diameter of 54 to 56 [mm], and diamond is a bond material such as resin, metal or electroforming. Use a combination of the two. The suction nozzle used at this time is desirably in the vicinity of the cutting portion by the rotating blade, and is preferably moved as the rotating blade moves. Further, the suction nozzle may suck only when the rotating blade cuts the gate portion metal, or may suck the whole time during the cutting process. The diameter of the suction nozzle is 0.2 to 0.3 [mm], which is the same as the dicing lane width, that is, the thickness of the rotating blade, and the suction nozzle is made of metal, vinyl or glass. The suction nozzle is connected to a vacuum pump and has sufficient pressure to reliably suck the cutting waste. In the present embodiment, the suction pressure is 1.5 to 10 [kPa].

  Here, the circuit board is attached to the dicing tape, and the semiconductor device is separated into pieces by tape type package dicing in which cutting with a rotating blade is performed. However, the jig that holds the circuit board directly with a jig and performs cutting with the rotating blade is used. System package dicing may be used.

  Next, as shown in FIG. 10, the circuit board 1 is divided into individual semiconductor devices 4 to manufacture a resin-encapsulated semiconductor device.

  A feature of the manufacturing method of the semiconductor device of the present embodiment is that the gate part metal on the gate part is formed by a plurality of metal pieces. Therefore, the cutting scraps of the gate portion metal are shorter than the distance between the solder balls, and a short circuit between the solder balls of the semiconductor device due to the scattering of the cutting scraps onto the solder ball surface can be prevented.

  The method for manufacturing a semiconductor device of the present invention is useful for improving the productivity of a resin-encapsulated semiconductor device, reducing short-circuit defects, and improving reliability.

The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor device of one Embodiment of this invention. The figure which shows the manufacturing method of the conventional semiconductor device The figure which shows the manufacturing method of the conventional semiconductor device The figure which shows the manufacturing method of the conventional semiconductor device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Circuit board 2 Sealing resin 3 Defect mark 4 Semiconductor device 5 Solder ball 6 Dicing lane 7 Gate part metal 8 Semiconductor chip 9 Metal thin wire 10 Rotating blade 11 Metal piece 12 External electrode 13 Dicing tape 14 Ring 15 Suction nozzle

Claims (6)

A plurality of semiconductor chip mounting regions, a gate portion that is outside the plurality of semiconductor chip mounting regions on a surface on which the plurality of semiconductor chips are mounted, and serves as a flow path for sealing resin, and a gate formed on the gate portion A step of preparing a substrate made of a partial metal;
Mounting the semiconductor chip in the semiconductor chip mounting region;
Electrically connecting the electrode of the semiconductor chip and the electrode of the substrate;
A resin sealing step of sealing the plurality of semiconductor chips with a continuous integral resin;
The continuous integral resin and the substrate are cut into the semiconductor chip mounting regions to singulate into individual semiconductor devices, and the gate metal scrap generated at the time of cutting is connected to a vacuum pump. A method of manufacturing a semiconductor device, comprising the step of sucking with a nozzle. A plurality of semiconductor chip mounting regions, a gate portion that is outside the plurality of semiconductor chip mounting regions on a surface on which the plurality of semiconductor chips are mounted, and serves as a flow path for sealing resin, and a gate formed on the gate portion A step of preparing a substrate made of a partial metal;
Mounting the semiconductor chip in the semiconductor chip mounting region;
Electrically connecting the electrode of the semiconductor chip and the electrode of the substrate;
A resin sealing step of sealing the plurality of semiconductor chips and a cutting region of the gate metal cut in the step of dividing into a single semiconductor device with a continuous integral resin;
A method of manufacturing a semiconductor device comprising the step of cutting the continuous integral resin and the substrate into individual semiconductor devices by cutting each of the semiconductor chip mounting regions. 3. The manufacturing method of a semiconductor device according to claim 2, wherein, in the step of dividing the semiconductor device into individual pieces, the cutting metal scrap generated at the time of cutting is sucked by a suction nozzle connected to a vacuum pump. Method. A plurality of semiconductor chip mounting regions; a gate portion that is outside the plurality of semiconductor chip mounting regions on a surface on which the plurality of semiconductor chips are mounted; and serves as a distribution path for a sealing resin; and a plurality of metal pieces on the gate portion Preparing a substrate made of a gate part metal formed by arranging,
Mounting the semiconductor chip in the semiconductor chip mounting region;
Electrically connecting the electrode of the semiconductor chip and the electrode of the substrate;
A resin sealing step of sealing the plurality of semiconductor chips with a continuous integral resin;
A method of manufacturing a semiconductor device comprising the step of cutting the continuous integral resin and the substrate into individual semiconductor devices by cutting each of the semiconductor chip mounting regions. 5. The manufacturing of a semiconductor device according to claim 4, wherein, in the step of dividing the semiconductor device into individual pieces, the metal scrap generated during cutting is sucked by a suction nozzle connected to a vacuum pump. Method. 5. The method of manufacturing a semiconductor device according to claim 4, wherein, in the resin sealing step, the gate metal cutting region in the step of dividing the semiconductor device into individual pieces is also resin-sealed.

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