JP2000183218A - Manufacture of ic package - Google Patents

Manufacture of ic package

Info

Publication number
JP2000183218A
JP2000183218A JP10354040A JP35404098A JP2000183218A JP 2000183218 A JP2000183218 A JP 2000183218A JP 10354040 A JP10354040 A JP 10354040A JP 35404098 A JP35404098 A JP 35404098A JP 2000183218 A JP2000183218 A JP 2000183218A
Authority
JP
Japan
Prior art keywords
package
blade
dicing
dicing blade
resin package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10354040A
Other languages
Japanese (ja)
Inventor
Shuichi Sawamoto
修一 澤本
Toshimitsu Maki
俊光 巻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd
Original Assignee
Mitsumi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Priority to JP10354040A priority Critical patent/JP2000183218A/en
Publication of JP2000183218A publication Critical patent/JP2000183218A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Dicing (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an IC package for improving quality and productivity in a dicing process after the molding of a resin package. SOLUTION: Plural IC chips 20 are loaded on the surface of a printed board 50, and the plural IC chips 20 are sealed by a resin package 40. Then, the resin package 40 and a pattern 52 on the surface of the print board are cut by a first dicing blade 61 (a first process), and then a main body 51 of the print board 50 is cut by a second dicing blade 62 (a second process).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ICパッケージの
製造方法、特にパッケージの切断方法に関する。
The present invention relates to a method for manufacturing an IC package, and more particularly to a method for cutting a package.

【0002】[0002]

【従来の技術】近年、携帯電話等の小型機器への適用か
ら生ずるICパッケージの小型化および薄型化の要望に
応えて、CSP(チップ・スケール・パッケージ)やB
GA(ボール・グリッド・アレイ)方式のICパッケー
ジが検討されている。
2. Description of the Related Art In recent years, in response to the demand for smaller and thinner IC packages resulting from application to small devices such as mobile phones, CSP (chip scale package) and B
A GA (ball grid array) type IC package is being studied.

【0003】図2は、CSP型ICパッケージの一例を
示す断面図である。この図において、10は平坦なリー
ドフレームであり、その中央にはICチップ20をダイ
ボンディングするアイランド部11が形成されている。
リードフレーム10の周辺には、ICチップ20の上部
電極との間をボンディングワイヤ30で接続するリード
部12が形成されている。ICチップ20の周囲は樹脂
パッケージ40によって封止される。
FIG. 2 is a sectional view showing an example of a CSP type IC package. In this figure, reference numeral 10 denotes a flat lead frame, and an island portion 11 for die-bonding the IC chip 20 is formed at the center thereof.
At the periphery of the lead frame 10, a lead portion 12 for connecting with an upper electrode of the IC chip 20 by a bonding wire 30 is formed. The periphery of the IC chip 20 is sealed with a resin package 40.

【0004】図3(a)および(b)は、BGA型IC
パッケージの一例を示す平面図および断面図である。本
例では、ICチップ20の搭載にプリント基板50を使
用する。このプリント基板50は、緩衝材(インターポ
ーザー)となるポリイミド製の基板本体51の表面側
に、ICチップ20を搭載するアイランド部および必要
な導体部を印刷した導体パターン52を形成してある。
ICチップ20の上部電極21と導体パターン52との
間はボンディングワイヤ30で接続される。ICチップ
20の周囲は樹脂パッケージ40で封止される。
FIGS. 3A and 3B show a BGA type IC.
It is a top view and a sectional view showing an example of a package. In this example, the printed circuit board 50 is used for mounting the IC chip 20. The printed circuit board 50 has a conductor pattern 52 on which an island portion on which the IC chip 20 is mounted and a necessary conductor portion are printed on the front side of a polyimide substrate body 51 serving as a buffer material (interposer).
The upper electrode 21 of the IC chip 20 and the conductor pattern 52 are connected by a bonding wire 30. The periphery of the IC chip 20 is sealed with a resin package 40.

【0005】基板本体51の裏面側には外部端子となる
パターン53を印刷形成してある。表面側のパターン5
2と裏面側のパターン53とはスルーホール54で接続
される。裏面側のパターン53の表面には、外部端子と
なる半田ボール55が熱溶着されている。
A pattern 53 serving as an external terminal is printed and formed on the back side of the substrate body 51. Pattern 5 on the front side
2 and the pattern 53 on the back side are connected by a through hole 54. A solder ball 55 serving as an external terminal is heat-welded to the surface of the pattern 53 on the back side.

【0006】複数のICチップは共通の樹脂パッケージ
に封止された後、切断されて個々のICパッケージに分
離される。この切断は一般に金属またはボンド材+ダイ
アモンド製のダイシングブレードを用いるダイサーで行
われる。
[0006] After a plurality of IC chips are sealed in a common resin package, they are cut and separated into individual IC packages. This cutting is generally performed by a dicer using a dicing blade made of metal or a bond material + diamond.

【0007】図4(a)の断面図は、2つのICチップ
20A,20Bを共通の樹脂パッケージ40で封止した
切断前の状態を模式的に示してある。この状態で、IC
チップ20A,20Bの中間をダイシングブレード60
で切断すると、2つの個別ICパッケージ40A,40
Bに分割できる。
FIG. 4A is a cross-sectional view schematically showing a state before two IC chips 20A and 20B are sealed with a common resin package 40 before cutting. In this state, the IC
A dicing blade 60 is provided between the chips 20A and 20B.
And cut the two individual IC packages 40A, 40A
B.

【0008】[0008]

【発明が解決しようとする課題】従来のダイシング方法
では、1回のダイシングで樹脂パッケージ40とプリン
ト基板50の双方を同時に切断するため、効率はよい
が、ブレード60により基板本体51の切断面に生ずる
荒れ、並びに基板本体51と表面パターン52の接合界
面へのストレス付与という問題を残す。
In the conventional dicing method, both the resin package 40 and the printed board 50 are cut simultaneously by one dicing, so that the efficiency is high. There remains a problem of the resulting roughness and the application of stress to the bonding interface between the substrate body 51 and the surface pattern 52.

【0009】また、配線を電解メッキで作成している場
合には、特性検査は切断後に行われるため、個別のIC
パッケージを1個毎に検査する必要があり、効率が悪
い。分割された複数のICパッケージを一括検査しよう
とすれば、複数のICパッケージ40A,40Bをテー
プで固定する必要があるが、これだけでは位置精度にば
らつきが生じてコンタクト方法が複雑になる。
When the wiring is formed by electrolytic plating, the characteristic inspection is performed after cutting, so that individual IC
It is necessary to inspect each package individually, which is inefficient. In order to inspect a plurality of divided IC packages at once, it is necessary to fix the plurality of IC packages 40A and 40B with tape, but this alone causes variation in positional accuracy and complicates the contact method.

【0010】本発明は、樹脂パッケージのモールド後の
ダイシング工程で品質および生産性を向上させることの
できるICパッケージの製造方法を提供することを目的
としている。
An object of the present invention is to provide a method of manufacturing an IC package capable of improving quality and productivity in a dicing process after molding of a resin package.

【0011】[0011]

【課題を解決するための手段】本発明の上記目的は、プ
リント基板の表面上に複数のICチップを搭載する工程
と、前記複数のICチップを共通の樹脂パッケージで封
止する工程と、前記樹脂パッケージおよび前記プリント
基板表面のパターンをダイシングブレードで切断する第
1の工程と、前記プリント基板の本体をダイシングブレ
ードで切断する第2の工程とを備えるICパッケージの
製造方法で達成できる。
The object of the present invention is to provide a method for mounting a plurality of IC chips on a surface of a printed circuit board, sealing the plurality of IC chips with a common resin package, This can be achieved by an IC package manufacturing method including a first step of cutting a resin package and a pattern on the surface of the printed board with a dicing blade, and a second step of cutting the main body of the printed board with a dicing blade.

【0012】本発明の実施の形態では、前記第2の工程
は、前記第1の工程と同じ種類のダイシングブレードで
行われるか、あるいは前記第1の工程のダイシングブレ
ードとは異なる種類のダイシングブレードで行われる。
後者の場合、前記第2の工程は、例えば前記第1の工程
のダイシングブレードより幅狭の異なるダイシングブレ
ードで行われる。更に、前記第1の工程と前記第2の工
程の間に、特性検査工程を更に備えることができる。
In an embodiment of the present invention, the second step is performed with a dicing blade of the same type as the first step, or a dicing blade of a different type from the dicing blade of the first step. Done in
In the latter case, the second step is performed, for example, by using a different dicing blade narrower than the dicing blade in the first step. Further, a characteristic inspection step may be further provided between the first step and the second step.

【0013】[0013]

【発明の実施の形態】以下、図面に示した実施形態を参
照して、本発明を詳細に説明する。図1(a)〜(d)
は、本発明の一実施形態に係るICパッケージの製造方
法を示す工程図である。図1(a)は、プリント基板5
0の表面上に複数のICチップ20A,20Bを搭載す
る工程と、前記複数のICチップ20A,20Bを共通
の樹脂パッケージ40で封止する工程とを経た状態を示
している。プリント基板50の構成は、図4と同様であ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments shown in the drawings. FIG. 1 (a) to (d)
FIG. 4 is a process chart showing a method for manufacturing an IC package according to an embodiment of the present invention. FIG. 1A shows a printed circuit board 5.
2 shows a state after a step of mounting a plurality of IC chips 20A and 20B on the surface of the “0” and a step of sealing the plurality of IC chips 20A and 20B with a common resin package 40. The configuration of the printed circuit board 50 is the same as that of FIG.

【0014】図1(b)は、樹脂パッケージ40および
プリント基板50表面のパターン52を第1のダイシン
グブレード61で切断する第1の工程を示している。こ
の第1の工程では、樹脂パッケージ40は完全に切断さ
れて、個別の樹脂パッケージ40A,40Bとなる。同
時に、プリント基板50は、その表面パターン52だけ
が切断され、基板本体51は連結したままの状態を保
つ。
FIG. 1B shows a first step of cutting the pattern 52 on the surface of the resin package 40 and the printed board 50 with a first dicing blade 61. In the first step, the resin package 40 is completely cut into individual resin packages 40A and 40B. At the same time, only the surface pattern 52 of the printed board 50 is cut, and the board body 51 remains connected.

【0015】この後、第1のブレード61を引き上げる
と、図1(c)に示すように、樹脂パッケージ40A,
40B間に溝41が残る。この状態では、基板本体51
が連続しているので、複数のICパッケージ40A,4
0Bを配列し直すことなく、これらに対する特性検査を
実施できる。
Thereafter, when the first blade 61 is pulled up, as shown in FIG. 1C, the resin packages 40A,
The groove 41 remains between 40B. In this state, the board body 51
Are continuous, so that a plurality of IC packages 40A, 4A
Characteristic inspection can be performed on these without re-arranging the OBs.

【0016】上記の特性検査実施後に、図1(d)に示
すように、基板本体51を第2のダイシングブレード6
2で完全に切断して、個別のICパッケージ40A,4
0Bを分離する(第2の工程)。この第2の工程で使用
される第2のブレード62は、第1のブレード61と同
じ種類のものでも良いが、異なる種類の第2のブレード
62を使用すると、ダイシング面の粗さをダイシングす
る材料に合わせて細かくすることができる。
After performing the above-described characteristic inspection, as shown in FIG.
2 to completely separate the individual IC packages 40A, 40A, 4
OB is separated (second step). The second blade 62 used in the second step may be of the same type as the first blade 61, but if a different type of second blade 62 is used, dicing of the dicing surface is performed. It can be made fine according to the material.

【0017】第2のブレード62の種類は、ブレードの
材質だけではなく、第1のブレード61で形成された溝
41の幅より狭い幅を持つものとする事ができる。この
実施形態で示す第1の工程と第2の工程は、逆にするこ
ともできる。即ち、第1の工程で基板本体51を切断
し、第2の工程で表面パターン52と樹脂パッケージ4
0を切断する、という順序である。
The type of the second blade 62 is not limited to the material of the blade, but may have a width smaller than the width of the groove 41 formed by the first blade 61. The first step and the second step shown in this embodiment can be reversed. That is, the substrate body 51 is cut in the first step, and the surface pattern 52 and the resin package 4 are cut in the second step.
0 is cut off.

【0018】上述した本発明のICパッケージ製造方法
には、次の利点がある。(1)材料毎にブレードを選定
できるので、ダイシング面の粗さを細かくすることが可
能である。(2)ブレードへの負荷が少ないため、薄い
刃の使用が可能になる。この結果、高密度実装が可能に
なるので、低コスト化を図ることができる。(3)ブレ
ードへの負荷が少ないため、ブレードの寿命が長くな
る。(4)不要な配線部を第1の工程で切断して除去す
る事により、板状でのマルチ測定が可能となり、テスト
効率が向上する。
The above-described IC package manufacturing method of the present invention has the following advantages. (1) Since a blade can be selected for each material, the roughness of the dicing surface can be reduced. (2) Since the load on the blade is small, a thin blade can be used. As a result, high-density mounting becomes possible, and cost reduction can be achieved. (3) Since the load on the blade is small, the life of the blade is prolonged. (4) By cutting and removing unnecessary wiring portions in the first step, multi-measurement in a plate shape becomes possible, and test efficiency is improved.

【0019】[0019]

【発明の効果】以上述べたように本発明によれば、樹脂
パッケージのモールド後のダイシング工程で品質および
生産性を向上させることのできるICパッケージの製造
方法を実現できる。
As described above, according to the present invention, it is possible to realize a method of manufacturing an IC package capable of improving quality and productivity in a dicing step after molding of a resin package.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の一実施形態に係るICパッケージの
製造方法を示す工程図である。
FIG. 1 is a process chart showing a method for manufacturing an IC package according to an embodiment of the present invention.

【図2】 CSP型ICパッケージの一例を示す断面図
である。
FIG. 2 is a cross-sectional view illustrating an example of a CSP type IC package.

【図3】 BGA型ICパッケージの一例を示す平面図
および断面図である。
FIG. 3 is a plan view and a cross-sectional view illustrating an example of a BGA type IC package.

【図4】 従来のICパッケージの切断方法を示す断面
図である。
FIG. 4 is a cross-sectional view showing a conventional IC package cutting method.

【符号の説明】[Explanation of symbols]

20 ICチップ 30 ボンディングワイヤ 40 樹脂パッケージ 50 プリント基板 51 基板本体 52 表面パターン 53 裏面パターン 54 スルーホール 61 第1のダイシングブレード 62 第2のダイシングブレード Reference Signs List 20 IC chip 30 Bonding wire 40 Resin package 50 Printed circuit board 51 Substrate main body 52 Surface pattern 53 Back pattern 54 Through hole 61 First dicing blade 62 Second dicing blade

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 プリント基板の表面上に複数のICチッ
プを搭載する工程と、 前記複数のICチップを共通の樹脂パッケージで封止す
る工程と、 前記樹脂パッケージおよび前記プリント基板表面のパタ
ーンをダイシングブレードで切断する第1の工程と、 前記プリント基板の本体をダイシングブレードで切断す
る第2の工程とを備えることを特徴とするICパッケー
ジの製造方法。
A step of mounting a plurality of IC chips on a surface of a printed circuit board; a step of sealing the plurality of IC chips with a common resin package; and dicing the pattern of the resin package and the surface of the printed circuit board. A method for manufacturing an IC package, comprising: a first step of cutting with a blade; and a second step of cutting the main body of the printed circuit board with a dicing blade.
【請求項2】 前記第2の工程は、前記第1の工程と同
じ種類のダイシングブレードで行われることを特徴とす
る請求項1のICパッケージの製造方法。
2. The method according to claim 1, wherein the second step is performed using a dicing blade of the same type as the first step.
【請求項3】 前記第2の工程は、前記第1の工程のダ
イシングブレードとは異なる種類のダイシングブレード
で行われることを特徴とする請求項1のICパッケージ
の製造方法。
3. The IC package manufacturing method according to claim 1, wherein the second step is performed by using a dicing blade of a different type from the dicing blade in the first step.
【請求項4】 前記第2の工程は、前記第1の工程のダ
イシングブレードより幅狭の異なるダイシングブレード
で行われることを特徴とする請求項3のICパッケージ
の製造方法。
4. The IC package manufacturing method according to claim 3, wherein said second step is performed with a dicing blade having a width smaller than that of said dicing blade in said first step.
【請求項5】 前記第1の工程と前記第2の工程の間
に、特性検査工程を更に備えることを特徴とする請求項
1〜4のいずれかのICパッケージの製造方法。
5. The method for manufacturing an IC package according to claim 1, further comprising a characteristic inspection step between said first step and said second step.
JP10354040A 1998-12-14 1998-12-14 Manufacture of ic package Withdrawn JP2000183218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10354040A JP2000183218A (en) 1998-12-14 1998-12-14 Manufacture of ic package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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US7781089B2 (en) 2005-05-11 2010-08-24 Ricoh Company, Ltd. Protection circuit module for a secondary battery and a battery package using same
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US7781089B2 (en) 2005-05-11 2010-08-24 Ricoh Company, Ltd. Protection circuit module for a secondary battery and a battery package using same
JP2008108872A (en) * 2006-10-25 2008-05-08 Denso Corp Mold package and its manufacturing method
US8790939B2 (en) 2008-02-22 2014-07-29 Osram Opto Semiconductors Gmbh Method for producing a plurality of radiation-emitting components and radiation-emitting component
JP2011512683A (en) * 2008-02-22 2011-04-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Method of making a plurality of beam emitting components and beam emitting components
KR101525638B1 (en) * 2008-02-22 2015-06-03 오스람 옵토 세미컨덕터스 게엠베하 Method for producing a plurality of radiation emitting components and radiation emitting component
JP2014108491A (en) * 2012-12-03 2014-06-12 Towa Corp Cutting apparatus and method for manufacturing electronic component
CN103855058A (en) * 2012-12-03 2014-06-11 东和株式会社 Apparatus and method for manufacturing electronic component
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US9543205B2 (en) 2014-10-22 2017-01-10 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
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