TW201630149A - 電子電力模組及其製造方法 - Google Patents

電子電力模組及其製造方法 Download PDF

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TW201630149A
TW201630149A TW104137974A TW104137974A TW201630149A TW 201630149 A TW201630149 A TW 201630149A TW 104137974 A TW104137974 A TW 104137974A TW 104137974 A TW104137974 A TW 104137974A TW 201630149 A TW201630149 A TW 201630149A
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power module
base
electronic power
isolated
electronic
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TW104137974A
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理查J. 伯諾
幸一郎 吉本
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力特福斯股份有限公司
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Abstract

本發明揭露一種電子電力模組。所述模組包含底座以及安裝至所述底座的多個在內部經隔離的分離電子器件,以使得將多個在內部經隔離的分離電子器件的電導線定向遠離所述底座。可將電導線耦接至印刷電路板。所揭露的其他特徵包含熱介面材料及特殊應用散熱體。組合件可經由射出模製而被包覆模製,或使用封裝劑而被罐封。實例電子器件包含閘流體、二極體以及電晶體。

Description

使用分離半導體構件之半導體電力模組
本文中所描述的實施例大體上是有關於一種電子器件,其由提供經增加熱彈性的若干分離半導體構件形成。
使用直接銅接合(direct bonded copper; DBC)基板建構一些電子模組。DBC基板可由陶瓷絕緣體形成,其中銅直接接合至陶瓷絕緣體的一側。儘管DBC基板提供半導體晶粒的經增加熱彈性,但其大幅度增加在組裝之前測試構件的難度。另外,用於DBC基板構件的組裝成本相對於非DBC構件較高。此外,將形成於DBC基板上的兩個構件按比例縮放是困難的。更具體言之,當構件被安裝至DBC基板時,將一個器件上可能包含的構件的數目按比例縮放是困難的。另外,可限制可用的電路拓撲的數目。本發明是針對這些擔憂。
以下內容為經簡化概述,以便提供對本文中所描述的一些實施例的基本理解。此概述不是廣泛綜述,且其不意欲識別關鍵/重要元件、或描繪其範疇。其唯一目的在於以簡化形式呈現一些概念以作為隨後呈現的更詳細描述的序言。
各種實施例大體上是針對一種電子器件,其由提供優於習知技術的經增加熱彈性的若干分離半導體構件形成。可將根據本發明的各種實施例的電子器件按比例縮放以提供多種不同構件及/或電路拓撲,同時仍維持優於習知技術的熱彈性。
在一個實施例中,分離電子器件被安裝於底座上,其中較佳地將電導線定向遠離底座。通常將電子器件理解為指用於電子系統中以影響電子或電場的物理實體。底座可包括導熱材料(諸如銅),以允許遠離在內部經隔離的分離電子器件而進行熱傳遞。
在一個實施例中,使用機械扣件(諸如,螺釘、彈簧夾頭以及其類似者)將器件安裝於底座上。在一個實施例中,每一器件具有以90度角形成至底座以提供通孔印刷電路板(printed circuit board; PCB)裝置的電導線。可將組合件焊接成提供所要求的特定拓撲的PCB。可將一或多個特殊應用散熱體安裝至底座上。整個組合件可藉由射出模製而被包覆模製,或使用封裝劑而被罐封。
現將參考附圖在下文中更加充分地描述本發明。然而應瞭解,前述技術方案可以許多不同形式體現,且不應被解釋為限於本文所闡述的實施例。反而是,提供這些實施例以使得本發明將透徹且完整,且將向一般熟習此項技術者充分傳達所主張標的物的範疇。在圖式中,相同編號通篇指相同元件。
1 至圖 2 說明由若干分離電子器件120-a形成的電子器件100。詳言之, 1 說明器件100的仰視圖,而 2 說明器件100的側視圖。應瞭解,如本文中所使用的“a ”可指任何正整數。此外,儘管 1 至圖 2 說明分離電子器件120-1至120-6,但實例並不限於此情形中。更具體言之,器件100可包含任何數目個分離電子器件120。
更具體言之,轉向 1 ,電子器件100包含分離電子器件120-1、120-2、120-3、120-4、120-5以及120-6。一般而言,分離電子器件120-a 可為多種類型的電子器件中的任一者,諸如電阻器、電容器、閘流體、二極體、電晶體、天線、機電器件、壓電器件或其類似者。此外,分離電子器件120-a 可為多種分離電路中的任一者,諸如放大器、振盪器、轉換器或其類似者。
在一些實例中,分離電子器件在內部與彼此隔離。更具體言之,每一分離電子器件120-a 與其他器件120-a 電隔離。在一些實例中,分離電子器件120-a 可具有操作以在內部隔離器件的殼體。殼體可由金屬、塑膠、玻璃、陶瓷或另一種絕緣材料製成。
內部隔離的一些優勢包含:保護免受碰撞以及腐蝕、穩定固定觸針或導線(其用以將器件連接至外部電路)以及消散產生於器件中的熱。此外,使用器件100中的在內部經隔離的分離電子器件120-a 的優勢為:可在組裝以及/或完全形成器件100之前測試每一分離電子器件120-a
器件100更包含底座140。將每一分離電子器件120-a 貼附至底座140。 1 至圖 2 展示藉由螺釘130-a 而被貼附至底座的分離電子器件120-a 。詳言之,分離電子器件120-1至120-6展示為使用螺釘130-1至130-6而被分別貼附。然而,實例並不限於此情形中。具體言之,可藉由多種技術中的任一者(諸如鉚接、捲曲、熔接、焊接、硬焊、包帶、膠結)或使用黏著劑(例如,熱環氧樹脂或其類似者)將分離電子器件120-a 貼附至底座140。
一般而言,底座140可包括多種導熱材料中的任一者。舉例而言,底座140可為銅、銀、金、鋁、鐵、鋼、黃銅、青銅、汞、石墨或包含此等或其他導熱材料中的一或多者的合金。
應瞭解,分離電子器件120-a 可包含任何數目個電導線110-ab ,其中導線的數目視每一個別分離電子器件120-a 的性質而定。然而,為方便以及清晰起見,分離電子器件120-a 展示為具有三個電導線110-ab 。詳言之,分離電子器件120-1包含電導線110-11、110-12以及110-13。分離電子器件120-2包含電導線110-21、110-22以及110-23。分離電子器件120-3包含電導線110-31、110-32以及110-33。分離電子器件120-4包含電導線110-41、電導線110-42以及電導線110-43。分離電子器件120-5包含電導線110-51、110-52以及110-53。分離電子器件120-6包含電導線110-61、110-62以及110-63。每一分離電子器件120可為諸如閘流體、二極體、電晶體或另一類型的電子器件的電子器件。每一分離電子器件120在內部被隔離,意謂其具有可由金屬、塑膠、玻璃、陶瓷或其他材料製成的殼體。每一分離電子器件120可包含蝕刻於矽晶圓中的個別分離構件。
在分離電子器件120-a 與底座140之間展示熱介面材料150。熱介面材料150可為具有類似於滑脂(grease)的屬性的黏稠流體物質,其藉由填充歸因於分離電子器件120-a以及底座140的表面中的缺陷而存在的氣隙來提高底座140以及分離電子器件120-a 的熱導率,藉此允許更多熱消散。在一個實例中,熱介面材料150可包括懸浮於矽酮熱化合物中的金屬氧化物粒子以及氮化物粒子。在其他實例中,熱介面材料150可包括水、熱滑脂、氧化鋁、氧化鋅、鋼、氟化鈉鋁、銅、銀、金剛石、氧化鈹、氮化鋁、氧化鋅、二氧化矽、鎵或其他材料。
3 自側視圖說明電子器件300。 3 展示藉由螺釘130-1以及130-2而被分別貼附至底座140的分離電子器件120-1以及120-2。然而,實例並不限於此情形中。具體言之,可藉由多種技術中的任一者(諸如鉚接、捲曲、熔接、焊接、硬焊、包帶、膠結)或使用黏著劑(例如,熱環氧樹脂或其類似者)將分離電子器件120-a 貼附至底座140。
應瞭解,分離電子器件120-a 可包含任何數目個電導線110-ab,其中導線的數目視每一個別分離電子器件120-a 的性質而定。然而,為方便以及清晰起見,分離電子器件120-a 展示為具有電導線110-1以及110-2。在此實例中,將電導線110-1以及110-2定向遠離底座140。
在正常操作期間,分離電子器件120-a 可產生大量熱。若在分離電子器件120-a 的操作期間產生的熱不被去除,則可使分離電子器件120-a 或靠近分離電子器件120-a 的其他器件過熱,從而導致對分離電子器件120-a 的損壞、對靠近分離電子器件120-a 的器件的損壞,或導致效能退化。在此實例中,已將特殊應用散熱體310安裝至底座140上以輔助熱消散。可需要將散熱體310的熱消散要求與其他因素進行平衡。若散熱體具有顯著不同於底座140或其他經附接構件的熱膨脹係數,則散熱體310可能開裂、損壞或與散熱體310附接至的電子構件分離。此外,用以製造散熱體的許多材料相對較重。若分離電子器件120-a 或組合件的其他部分受到振動或碰撞,則散熱體310的重量可能開裂、損壞或導致散熱體310與底座140分離。因此,可為有利的做法是:當選擇散熱體時,最佳化熱消散、重量、成本、可加工性以及其他特徵。相應地,散熱體310可為器件300的應用所特有的。
在一些實例的情況下,可採取措施以便保護免受衝擊以及振動,且保護電子構件免受濕氣以及腐蝕性試劑。詳言之,可藉由封裝劑320而罐封組合件。封裝劑320可為提供抗衝擊以及振動性、且輔助除去濕氣以及腐蝕性試劑的固態或凝膠狀化合物。封裝劑320可包括諸如聚胺脂或矽酮的化合物。
4 自側視圖說明器件400。分離電子器件120-1以及120-2展示為藉由螺釘130-1以及130-2而被分別貼附至底座140。然而,實例並不限於此情形中。具體言之,可藉由多種技術中的任一者(諸如鉚接、捲曲、熔接、焊接、硬焊、包帶、膠結)或使用黏著劑(例如,熱環氧樹脂或其類似者)將分離電子器件120-a 貼附至底座140。
應瞭解,分離電子器件120-a 可包含任何數目個電導線110-ab ,其中導線的數目視每一個別分離電子器件120-a 的性質而定。然而,為方便以及清晰起見,分離電子器件120-a 展示為具有電導線110-1以及110-2。已將特殊應用散熱體310安裝至底座140上。可採取措施以便保護免受衝擊以及振動,且保護電子構件免受濕氣以及腐蝕性試劑的影響。在此實例中,組合件已經由射出模製而被包覆模製。在此程序中,材料已被置放至經加熱桶中、被混合以及被加壓至由散熱體310形成的空腔中,在所述空腔中,材料冷卻並硬化至組態420。實例材料包含金屬、玻璃、彈性體以及舔劑(confection),以及熱塑性以及熱固性聚合物。
5 自側視圖說明器件500。分離電子器件120-1以及120-2展示為藉由螺釘130-1以及130-2而被分別貼附至底座140。然而,實例並不限於此情形中。具體言之,可藉由多種技術中的任一者(諸如鉚接、捲曲、熔接、焊接、硬焊、包帶、膠結)或使用黏著劑(例如,熱環氧樹脂或其類似者)將分離電子器件120-a 貼附至底座140。
應瞭解,分離電子器件120-a 可包含任何數目個電導線110-ab ,其中導線的數目視每一個別分離電子器件120-a 的性質而定。然而,為方便以及清晰起見,分離電子器件120-a 展示為具有電導線110-1以及110-2。機械地支撐以及電連接電子器件120-a 可能是需要的。在此實例中,已將電導線110-a 焊接至具有電導線520-a 的印刷電路板510上,以使得印刷電路板510機械地支撐以及電連接分離電子器件120-a 。印刷電路板510可包含由經層合至不導電基板上的導電薄片蝕刻的導電軌道、襯墊以及其他特徵。使用印刷電路板510相較於電連接分離電子器件120的其他方法可較不昂貴且更快,這是因為用於組裝的程序可為自動化的。使用印刷電路板510可存在額外益處,例如可減少佈線錯誤。電連接分離電子器件120的替代方式是可能的,包含使用終端條進行手動線包覆以及點對點建構。
6 自側視圖說明器件600。分離電子器件120-1以及120-2展示為藉由螺釘130-1以及130-2而被分別貼附至底座140。然而,實例並不限於此情形中。具體言之,可藉由多種技術中的任一者(諸如鉚接、捲曲、熔接、焊接、硬焊、包帶、膠結)或使用黏著劑(例如,熱環氧樹脂(thermal epoxy)或其類似者)將分離電子器件120-a 貼附至底座140。
應瞭解,分離電子器件120-a 可包含任何數目個電導線110-ab ,其中導線的數目視每一個別分離電子器件120-a 的性質而定。然而,為方便以及清晰起見,分離電子器件120-a 展示為具有電導線110-1以及110-2。已將電導線110-1以及110-2焊接至具有電導線520-1以及520-2的印刷電路板510上。已將特殊應用散熱體310安裝至底座140上。接著已藉由封裝劑320而罐封組合件。
7 自側視圖說明器件700。 7 展示藉由螺釘130-1以及130-2而被分別貼附至底座140的分離電子器件120-1以及120-2。然而,實例並不限於此情形中。具體言之,可藉由多種技術中的任一者(諸如鉚接、捲曲、熔接、焊接、硬焊、包帶、膠結)或使用黏著劑(例如,熱環氧樹脂或其類似者)將分離電子器件120-a 貼附至底座140。
應瞭解,分離電子器件120-a 可包含任何數目個電導線110-ab ,其中導線的數目視每一個別分離電子器件120-a 的性質而定。然而,為方便以及清晰起見,分離電子器件120-a 展示為具有電導線110-1以及110-2。在此實例中,將電導線110-1以及110-2定向遠離底座140。已將電導線110-1以及110-2焊接至具有電導線520-1以及520-2的印刷電路板510上。已將特殊應用散熱體310安裝至底座140上。組合件已經由射出模製而被包覆模製。在此程序中,材料已被置放至經加熱桶中、被混合以及被加壓至由散熱體310形成的空腔中,在所述空腔中,材料冷卻以及硬化至組態420。實例材料包含金屬、玻璃、彈性體以及舔劑,以及熱塑性以及熱固性聚合物。
應理解,本文中所描述的目前較佳實施例的各種改變以及修改將對熟習此項技術者而言顯而易見。這些改變以及修改可在不脫離本發明的精神以及範疇的情況下且在不減少其伴隨優勢的情況下進行。因此,預期這些改變以及修改由所附申請專利範圍涵蓋。
100、300、400、500、600、700‧‧‧器件
110-1、110-11、110-12、110-13、110-2、110-21、110-22、110-23、110-31、110-32、110-33、110-41、110-42、110-43、110-51、110-52、110-53、110-61、110-62、110-63、520-1、520-2‧‧‧電導線
120-1、120-2、120-3、120-4、120-5、120-6‧‧‧分離電子器件
130-1、130-2、130-3、130-4、130-5、130-6‧‧‧螺釘
140‧‧‧底座
150‧‧‧熱介面材料
310‧‧‧散熱體
320‧‧‧封裝劑
420‧‧‧組態
510‧‧‧印刷電路板
1 為說明根據本發明的至少一個實施例而被配置的電子器件的仰視圖的方塊圖。 2 為說明圖1的電子器件的側視圖的方塊圖。 3 為說明根據本發明的至少一個實施例而被配置的藉由封裝劑而被罐封的電子器件的方塊圖。 4 為說明根據本發明的至少一個實施例而被配置的藉由絕緣體而被包覆模製的電子器件的方塊圖。 5 為說明根據本發明的至少一個實施例而被配置的可操作地連接至PCB的電子器件的方塊圖。 6 為說明根據本發明的至少一個實施例而被配置的可操作地連接至PCB且藉由封裝劑而被罐封的電子器件的方塊圖。 7 為說明根據本發明的至少一個實施例而被配置的可操作地連接至PCB且藉由絕緣體而被包覆模製的電子器件的方塊圖。
100‧‧‧器件
110-11、110-12、110-13、110-21、110-22、110-23、110-31、110-32、110-33、110-41、110-42、110-43、110-51、110-52、110-53、110-61、110-62、110-63‧‧‧電導線
120-1、120-2、120-3、120-4、120-5、120-6‧‧‧分離電子器件
130-1、130-2、130-3、130-4、130-5、130-6‧‧‧螺釘
140‧‧‧底座

Claims (20)

  1. 一種電子電力模組,其包括: 底座;以及 多個在內部經隔離的分離電子器件,其被安裝至所述底座; 其中多個在內部經隔離的所述分離電子器件中的每一者包含經定向遠離所述底座的電導線。
  2. 如申請專利範圍第1項所述的電子電力模組,更包括: 熱介面材料,其安置於多個在內部經隔離的所述分離電子器件與所述底座之間。
  3. 如申請專利範圍第2項所述的電子電力模組,其中所述熱介面材料包括氧化鈹、氮化鋁、氧化鋅或二氧化矽。
  4. 如申請專利範圍第1項所述的電子電力模組,其中所述底座包括銅。
  5. 如申請專利範圍第1項所述的電子電力模組,其中所述電導線耦接至印刷電路板(PCB)。
  6. 如申請專利範圍第5項所述的電子電力模組,其中所述電導線藉由焊接而被耦接至所述印刷電路板(PCB)。
  7. 如申請專利範圍第1項所述的電子電力模組,其中所述底座耦接至至少一個散熱體。
  8. 如申請專利範圍第1項所述的電子電力模組,其中多個在內部經隔離的所述分離電子器件以及所述底座經由射出模製而被包覆模製。
  9. 如申請專利範圍第1項所述的電子電力模組,其中多個在內部經隔離的所述分離電子器件以及所述底座使用封裝劑而被罐封。
  10. 如申請專利範圍第1項所述的電子電力模組,其中每一所述分離電子器件為閘流體、二極體或電晶體。
  11. 一種用於製造電子電力模組的方法,包括: 將多個在內部經隔離的分離電子器件安裝至底座,其中多個在內部經隔離的所述分離電子器件中的每一者包含電導線,以使得將所述導線定向遠離所述底座。
  12. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,更包括: 將熱介面材料安置於多個在內部經隔離的所述分離電子器件與所述底座之間。
  13. 如申請專利範圍第12項所述的用於製造電子電力模組的方法,其中所述熱介面材料包括氧化鈹、氮化鋁、氧化鋅或二氧化矽。
  14. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,其中所述底座包括銅。
  15. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,更包括: 將所述電導線耦接至印刷電路板。
  16. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,更包括: 將所述電導線焊接至印刷電路板。
  17. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,更包括: 將所述底座耦接至至少一個散熱體。
  18. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,其更包括: 經由射出模製而對多個在內部經隔離的所述分離電子器件以及所述底座進行包覆模製。
  19. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,更包括: 使用封裝劑而對多個在內部經隔離的所述分離電子器件以及所述底座進行罐封。
  20. 如申請專利範圍第11項所述的用於製造電子電力模組的方法,其中每一所述分離電子器件為閘流體、二極體或電晶體。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722179B (zh) * 2016-04-28 2021-03-21 日商電化股份有限公司 陶瓷電路基板及其製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11232948B2 (en) * 2016-04-01 2022-01-25 Intel Corporation Layered substrate for microelectronic devices
US10763193B2 (en) * 2018-10-30 2020-09-01 Hamilton Sundstrand Corporation Power control modules
DE102018133434B4 (de) * 2018-12-21 2021-03-25 Rogers Germany Gmbh Verfahren zum Verkapseln mindestens eines Trägersubstrats
DE102018133456A1 (de) * 2018-12-21 2020-06-25 Rogers Germany Gmbh Verfahren zum Verkapseln mindestens eines Trägersubstrats, Elektronikmodul und Werkzeug zum Verkapseln eines Trägersubstrats

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083368A (en) * 1990-02-14 1992-01-28 Motorola Inc. Method of forming modular power device assembly
US5757621A (en) * 1996-06-06 1998-05-26 Lucent Technologies Inc. Heat sink assembly employing spring-loaded standoffs
US6921973B2 (en) * 2003-01-21 2005-07-26 Delphi Technologies, Inc. Electronic module having compliant spacer
US7892883B2 (en) * 2008-05-30 2011-02-22 Intel Corporation Clipless integrated heat spreader process and materials
WO2011083737A1 (ja) * 2010-01-05 2011-07-14 富士電機システムズ株式会社 半導体装置用ユニットおよび半導体装置
US20110278706A1 (en) * 2010-05-11 2011-11-17 iQXPRZ Power Inc. Power Electronic Device Package
US9004705B2 (en) * 2011-04-13 2015-04-14 Intematix Corporation LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722179B (zh) * 2016-04-28 2021-03-21 日商電化股份有限公司 陶瓷電路基板及其製造方法

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