TW201625078A - Laminate structure - Google Patents

Laminate structure Download PDF

Info

Publication number
TW201625078A
TW201625078A TW104133692A TW104133692A TW201625078A TW 201625078 A TW201625078 A TW 201625078A TW 104133692 A TW104133692 A TW 104133692A TW 104133692 A TW104133692 A TW 104133692A TW 201625078 A TW201625078 A TW 201625078A
Authority
TW
Taiwan
Prior art keywords
layer
adhesive layer
resin composition
printed wiring
flexible printed
Prior art date
Application number
TW104133692A
Other languages
Chinese (zh)
Other versions
TWI685281B (en
Inventor
Hidekazu Miyabe
Naoyuki Koike
Makoto Hayashi
Yutaka Yokoyama
Original Assignee
Taiyo Ink Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Ink Mfg Co Ltd filed Critical Taiyo Ink Mfg Co Ltd
Publication of TW201625078A publication Critical patent/TW201625078A/en
Application granted granted Critical
Publication of TWI685281B publication Critical patent/TWI685281B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

Provided is a structure that satisfies the required performance of an insulating film for a flexible printed wiring board and is suitable for a collective formation process of a bending portion and mounting portion. Further provided is a flexible printed wiring board that has a cured product of the structure as a protective film, e.g. a coverlay or solder resist. Provided are: a laminate structure that has an adhesive layer (A) comprising an alkali-developable resin composition and a protective layer (B) comprising a photosensitive resin composition and being formed upon the adhesive layer (A), wherein the ratio of the film thickness of the adhesive layer (A) to the protective layer (B) is A/B=0.5-50, and the ratio of the development speed (a) of the adhesive layer (A) to the development speed (b) of the protective layer (B) is a/b=1.1-100; and a dry film and flexible printed wiring board using said laminate structure.

Description

積層構造體 Laminated structure

本發明係關於積層構造體,特別是關於有用於可撓性印刷配線板之絶緣膜的積層構造體,以及使用其之乾膜及可撓性印刷配線板。 The present invention relates to a laminated structure, and more particularly to a laminated structure having an insulating film for a flexible printed wiring board, and a dry film and a flexible printed wiring board using the same.

近年來,由於智慧手機及平板終端的普及而導致電子機器的小型薄型化,使得電路基板的小尺寸化已成為必要。因此,可彎折收納之可撓性印刷配線板的用途增大,且對於該可撓性印刷配線板追求比以往更高之可靠性。 In recent years, the popularity of smart phones and tablet terminals has led to a reduction in size and size of electronic devices, which has made it necessary to reduce the size of circuit boards. Therefore, the use of the flexible printed wiring board that can be bent and accommodated is increased, and the reliability of the flexible printed wiring board is higher than ever.

相對於此,目前作為確保可撓性印刷配線板之絕緣可靠性的絕緣膜,廣泛採用了混裝流程,其折彎部分(彎曲部)係使用以耐熱性及彎曲性等機械特性優異之聚醯亞胺作為基底的覆蓋膜(例如參照專利文獻1,2);實裝部分(非彎曲部)係使用電器絕緣性等優異並能夠細微加工的感光性樹脂組成物。 On the other hand, in the insulating film for ensuring the insulation reliability of the flexible printed wiring board, a mixing process is widely used, and the bent portion (bending portion) is made of a polymer having excellent mechanical properties such as heat resistance and flexibility. A bismuth imine is used as a coating film for a substrate (for example, refer to Patent Documents 1 and 2); and a mounting portion (non-bending portion) is a photosensitive resin composition which is excellent in electrical insulating properties and can be finely processed.

亦即,由於以耐熱性及彎曲性等機械特性優異的聚醯亞胺作為基底之覆蓋膜需要透過模具沖孔來加 工,故對細微佈線較不適合。因此,對於需要細微佈線之晶片實裝部分,對其部分地併用可光微影加工之鹼顯影型感光性樹脂組成物(阻焊劑)是有必要的。 In other words, a cover film having a polyimine which is excellent in mechanical properties such as heat resistance and flexibility as a base needs to be punched through a die. It is not suitable for fine wiring. Therefore, it is necessary for the wafer-mounting portion which requires fine wiring to partially use an alkali-developable photosensitive resin composition (solder resist) which can be photolithographically processed.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1:日本特開昭62-263692號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 62-263692

專利文獻2:日本特開昭63-110224號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. SHO 63-110224

如此,在可撓性印刷配線板的製造步驟中無法採用貼合覆蓋膜之步驟與形成阻焊劑之步驟的混裝流程,故成本性及作業性不佳便成為問題。 As described above, in the manufacturing process of the flexible printed wiring board, the mixing process of the step of bonding the cover film and the step of forming the solder resist cannot be employed, so that cost and workability are disadvantageous.

針對於此,雖然已探討過將作為阻焊劑之絕緣膜或覆蓋膜之絕緣膜應用於可撓性印刷配線板的阻焊劑及覆蓋膜兩者之事,但可完全滿足兩者性能要求的材料卻仍未達到實用化。特別是對於可撓性印刷配線板,係追求實現了同時兼備下述特性的素材:對於作為阻焊劑之絕緣膜所要求的鹼顯影性,以及對於作為覆蓋膜之絕緣膜所要求的耐熱性及彎曲性等機械特性。 In view of this, although the insulating film or the insulating film as a solder resist is applied to both the solder resist and the cover film of the flexible printed wiring board, materials which can fully satisfy the performance requirements of both can be considered. However, it has not yet reached practical use. In particular, in the case of a flexible printed wiring board, it is desired to achieve material having the following characteristics: alkali developability required for an insulating film as a solder resist, and heat resistance required for an insulating film as a cover film. Mechanical properties such as bendability.

此處本發明之目的係提供可滿足作為可撓性印刷配線板絕緣膜要求的性能,且即使在彎折部分與實裝部分之一次形成流程中亦適用的構造體。此外,提供具有 以其硬化物作為保護膜(例如,覆蓋膜或阻焊劑)的可撓性印刷配線板。 The object of the present invention is to provide a structure which can satisfy the performance required as a flexible printed wiring board insulating film and which is applicable even in a single forming process of a bent portion and a mounted portion. In addition, provided with A flexible printed wiring board having a cured product thereof as a protective film (for example, a cover film or a solder resist).

為解決前述課題,本發明之特徵係具有由鹼顯影性樹脂組成物而成的接著層(A),以及形成於該接著層(A)上之由感光性樹脂組成物而成的保護層(B),且前述接著層(A)與前述保護層(B)的膜厚的比例:A/B=0.5~50;前述接著層(A)之顯影速度(a)與前述保護層(B)之顯影速度(b)的比例:a/b=1.1~100。 In order to solve the above problems, the present invention is characterized in that the adhesive layer (A) comprising an alkali-developable resin composition and a protective layer composed of a photosensitive resin composition formed on the adhesive layer (A) B), and the ratio of the film thickness of the adhesion layer (A) to the protective layer (B): A/B = 0.5 to 50; the development speed (a) of the adhesion layer (A) and the protective layer (B) The ratio of the developing speed (b): a/b = 1.1 to 100.

對於本發明之積層構造體,較佳者係不論前述接著層(A)及前述保護層(B),均可透過光照射使其圖型化。又,本發明之積層構造體可適用於可撓性印刷配線板之彎曲部及非彎曲部中的至少任一者;具體而言,用於可撓性印刷配線板之覆蓋膜、阻焊劑及層間絕緣材料中的至少任一用途是可行的。 In the laminated structure of the present invention, it is preferable that the laminate layer (A) and the protective layer (B) are patterned by light irradiation. Further, the laminated structure of the present invention can be applied to at least one of a bent portion and a non-curved portion of a flexible printed wiring board; specifically, a cover film for a flexible printed wiring board, a solder resist, and At least any of the use of the interlayer insulating material is feasible.

又,本發明中乾膜之特徵,係前述本發明之積層構造體至少有單面被薄膜支撐或保護。 Further, the dry film of the present invention is characterized in that the laminated structure of the present invention has at least one side supported or protected by a film.

此外,本發明中可撓性印刷配線板之特徵,係在可撓性印刷配線基板上直接形成前述本發明之積層構造體層,或者在前述本發明之乾膜上形成積層構造體層;再透過光照射使其圖型化,再以顯影液一次地形成圖型來得到絕緣膜。再者,本發明中所謂之「圖型」係指圖型形狀的硬化物,即是絕緣膜。 Further, in the flexible printed wiring board of the present invention, the laminated structure layer of the present invention is directly formed on the flexible printed wiring board, or the laminated structure layer is formed on the dry film of the present invention; The pattern is formed by irradiation, and the pattern is formed once with the developer to obtain an insulating film. In addition, the "pattern" in the present invention means a cured product of a pattern shape, that is, an insulating film.

根據本發明,能夠實現可滿足作為可撓性印刷配線板絕緣膜要求的性能,且亦適用於彎折部分與實裝部分之一次形成流程的積層構造體,以及使用該構造體的乾膜及可撓性印刷配線板。 According to the present invention, it is possible to realize a laminated structure that satisfies the performance required as a flexible printed wiring board insulating film, and is also applicable to a primary forming process of a bent portion and a mounted portion, and a dry film using the same Flexible printed wiring board.

1‧‧‧可撓性印刷配線基材 1‧‧‧Flexible printed wiring substrate

2‧‧‧銅電路 2‧‧‧Bronze circuit

3‧‧‧接著層 3‧‧‧Next layer

4‧‧‧保護層 4‧‧‧Protective layer

5‧‧‧遮罩 5‧‧‧ mask

[圖1]模示性顯示本發明的可撓性印刷配線板之製造方法範例的步驟圖。 Fig. 1 is a flow chart showing an exemplary example of a method of manufacturing a flexible printed wiring board of the present invention.

以下將本發明之實施方式參照圖示並詳細說明。 Embodiments of the present invention will be described below in detail with reference to the drawings.

(積層構造體) (layered structure)

本發明之積層構造體係具有由鹼顯影性樹脂組成物而成的接著層(A),與在該接著層(A)上所形成之由感光性樹脂組成物而成的保護層(B),且前述接著層(A)與前述保護層(B)的膜厚的比例為A/B=0.5~50,前述接著層(A)之顯影速度(a)與前述保護層(B)之顯影速度(b)的比例為a/b=1.1~100。 The laminated structure system of the present invention has an adhesive layer (B) composed of an alkali-developable resin composition and a protective layer (B) composed of a photosensitive resin formed on the adhesive layer (A). And the ratio of the film thickness of the adhesive layer (A) and the protective layer (B) is A/B = 0.5 to 50, and the developing speed (a) of the bonding layer (A) and the developing speed of the protective layer (B) The ratio of (b) is a/b=1.1~100.

為了使用鹼顯影液進行圖型化,樹脂組成物 必須具有鹼溶解性。在積層構造體的情形中,若於保護層使用耐熱性優異之樹脂組成物,則因難以給該耐熱性優良之樹脂組成物賦予溶解性,故其顯影速度遲緩,結果造成了難以圖型化的問題。 In order to pattern using an alkali developer, the resin composition Must have alkali solubility. In the case of the laminated structure, when a resin composition having excellent heat resistance is used for the protective layer, it is difficult to impart solubility to the resin composition excellent in heat resistance, so that the development speed is slow, and as a result, it is difficult to pattern. The problem.

本發明者們為解決此課題,故著眼於保護層與接著層的膜厚及顯影速度並深入探討,結果發現藉由讓保護層與接著層之膜厚的比例以及保護層與接著層之顯影速度的比例分別落於前述範圍內便可解決前述課題,並使本發明臻至完成。 In order to solve this problem, the inventors of the present invention have intensively examined the film thickness and development speed of the protective layer and the adhesive layer, and as a result, found that the ratio of the thickness of the protective layer to the adhesive layer and the development of the protective layer and the adhesive layer are obtained. The above-mentioned problems can be solved by the ratio of the speeds falling within the above ranges, and the present invention is completed.

即,發現到將使用了顯影速度較慢的樹脂組成物之保護層,層合在使用了比該保護層之樹脂組成物顯影速度更快的樹脂組成物之接著層上方,並使兩者的膜厚的比例及顯影速度的比例分別落於前述範圍內後,即使保護層之顯影速度遲緩且難以透過鹼顯影進行圖型化,另外即使出現殘渣,但因為接著層之顯影速度快速,結果能夠將兩者完全沖洗掉,使積層構造整體的顯影速度落於實現範圍內。 That is, it was found that a protective layer of a resin composition using a slow development speed was laminated on the adhesive layer using a resin composition which was developed faster than the resin composition of the protective layer, and both were After the ratio of the film thickness ratio and the development speed falls within the above range, even if the development speed of the protective layer is slow and it is difficult to pattern by alkali development, even if the residue appears, the development speed of the adhesive layer is fast, and the result is The two are completely washed away, so that the development speed of the laminated structure as a whole falls within the realization range.

為了讓鹼顯影性與耐熱性及彎曲性等機械特性更良好地兼備,前述膜厚的比例為A/B=0.5~50,較佳為A/B=1.0~30、更佳為A/B=2.0~10,又前述顯影速度的比例為a/b=1.1~100、較佳為a/b=2.0~50、更佳為a/b=3.0~30。 In order to achieve better alkali developability, mechanical properties such as heat resistance and flexibility, the ratio of the film thickness is A/B = 0.5 to 50, preferably A/B = 1.0 to 30, and more preferably A/B. =2.0~10, and the ratio of the development speed is a/b=1.1~100, preferably a/b=2.0~50, more preferably a/b=3.0~30.

膜厚的比例在A/B=50以下時,由於積層構造體的層厚中具有耐熱性之保護層(B)所佔的比例較大,其 顯影性良好且能得到充分的耐熱性。又,在A/B=0.5以上時,由於顯影性良好之接著層(A)比例較大,其耐熱性良好且能夠透過鹼顯影進行圖型化。 When the ratio of the film thickness is A/B=50 or less, the proportion of the protective layer (B) having heat resistance among the layer thicknesses of the laminated structure is large, and The developability is good and sufficient heat resistance can be obtained. In addition, when A/B = 0.5 or more, since the ratio of the adhesive layer (A) which is excellent in developability is large, it is excellent in heat resistance and can be patterned by alkali development.

顯影速度的比例在a/b=1.1以上時,由於相對於顯影困難的保護層(B)接著層(A)之顯影速度相對較快,使其能夠透過鹼顯影進行圖型化。又,在a/b=100以下時,由於對接著層(A)之鹼水溶液的溶解性是適當的,且圖型形狀安定,使得鍍敷耐性等諸特性亦良好。 When the ratio of the developing speed is a/b = 1.1 or more, the development speed of the protective layer (B) and the layer (A) which are difficult to develop is relatively fast, so that it can be patterned by alkali development. In addition, when a/b = 100 or less, the solubility in the aqueous alkali solution of the adhesive layer (A) is appropriate, and the shape of the pattern is stabilized, so that the properties such as plating resistance are also good.

積層構造體在顯影時,為了保護層及接著層之各層溶解於鹼水溶液中所需的時間定為顯影時間〔秒〕,各層的膜厚定為膜厚〔μm〕時,顯影速度係以下述式表示。 In the development of the laminated structure, the time required for the respective layers of the protective layer and the subsequent layer to be dissolved in the aqueous alkali solution is set as the development time [second], and when the film thickness of each layer is set to the film thickness [μm], the development speed is as follows. Expression.

顯影速度〔μm/秒〕=膜厚〔μm〕/顯影時間〔秒〕 Development speed [μm/sec] = film thickness [μm] / development time [seconds]

(保護層(B)) (protection layer (B))

保護層(B)之感光性樹脂組成物的成分並無特別限制,例如可使用以往當作阻焊劑組成物使用之含有:含羧基樹脂或含羧基感光性樹脂、具有乙烯性不飽和鍵的化合物、光聚合起始劑及熱反應性化合物的光硬化性熱硬化性樹脂組成物,以及含有:含羧基樹脂、光鹼產生劑及熱反應性化合物的感光性熱硬化性樹脂組成物。 The component of the photosensitive resin composition of the protective layer (B) is not particularly limited. For example, a compound containing a carboxyl group-containing resin or a carboxyl group-containing photosensitive resin and having an ethylenically unsaturated bond, which is conventionally used as a solder resist composition, can be used. A photocurable thermosetting resin composition of a photopolymerization initiator and a thermally reactive compound, and a photosensitive thermosetting resin composition containing a carboxyl group-containing resin, a photobase generator, and a heat-reactive compound.

其中保護層(B)又以由耐熱性、強靭性優異的含有具有醯亞胺環或醯亞胺前驅體骨架之鹼溶解性樹脂的樹脂組成物所構成者為佳。 Among them, the protective layer (B) is preferably a resin composition containing an alkali-soluble resin having a skeleton of a quinone ring or a ruthenium imine precursor, which is excellent in heat resistance and toughness.

本發明中所謂的具有醯亞胺環或醯亞胺前驅體骨架之鹼溶解性樹脂,係指具有羧基及酸酐基等之鹼溶解性基,與醯亞胺環或醯亞胺前驅體骨架者。關於向該鹼溶解性樹脂導入醯亞胺環或醯亞胺前驅體骨架,可使用周知慣用的手法。例如可舉出讓羧酸酐成分與胺成分及異氰酸酯成分中任一者或兩者發生反應所得之樹脂。醯亞胺化可進行熱醯亞胺化亦可進行化學醯亞胺化,或併用此等來製造亦可。 The alkali-soluble resin having a quinone imine ring or a quinone imine precursor skeleton in the present invention means an alkali-soluble group having a carboxyl group and an acid anhydride group, and a bismuth imine ring or a quinone imine precursor skeleton. . A conventionally known method can be used to introduce a quinone imine ring or a quinone imine precursor skeleton into the alkali-soluble resin. For example, a resin obtained by reacting a carboxylic anhydride component with any one or both of an amine component and an isocyanate component can be mentioned. The ruthenium imidization can be carried out by thermal imidization, chemical imidation, or the like.

此處,作為羧酸酐成分雖然可舉出四羧酸酐及三羧酸酐等,但並不限定於此等酸酐,只要是具有與胺基或異氰酸酯基反應之酸酐基及羧基的化合物,便可含有其衍生物來使用。又,此等羧酸酐成分可以單獨或組合使用。 Here, the carboxylic anhydride component may, for example, be a tetracarboxylic acid anhydride or a tricarboxylic acid anhydride, but is not limited to such an acid anhydride, and may be a compound having an acid anhydride group and a carboxyl group which react with an amine group or an isocyanate group. Its derivatives are used. Further, these carboxylic anhydride components may be used singly or in combination.

作為四羧酸酐,係可舉出焦蜜石酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、3,3’,4,4’-聯苯四羧酸二酐、4,4’-氧基二酞酸二酐、1,2,3,4-苯四羧酸二酐、3,3”,4,4”-三聯苯基四羧酸二酐、3,3''',4,4'''-四聯苯基四羧酸二酐、3,3'''',4,4''''-五聯苯基四羧酸二酐、亞甲基-4,4’-二酞酸二酐、1,1-亞乙烯基-4,4’-二酞酸二酐、2,2-亞丙基-4,4’-二酞酸二酐、1,2-伸乙基-4,4’-二酞酸二酐、1,3-三亞甲基-4,4’-二酞酸二酐、1,4-四亞甲基-4,4’-二酞酸二酐、1,5-五亞甲基-4,4’-二酞酸二酐、硫基-4,4’-二酞酸二酐、磺醯基-4,4’-二酞酸二酐、1,3-雙(3,4-二羧基苯基)-1,1,3,3-四甲基矽氧烷二酐、1,3-雙(3,4-二羧基苯基)苯二酐、1,4- 雙(3,4-二羧基苯基)苯二酐、1,3-雙(3,4-二羧基苯氧基)苯二酐、1,4-雙(3,4-二羧基苯氧基)苯二酐、1,3-雙〔2-(3,4-二羧基苯基)-2-丙基〕苯二酐、1,4-雙〔2-(3,4-二羧基苯基)-2-丙基〕苯二酐、雙〔3-(3,4-二羧基苯氧基)苯基〕甲烷二酐、2,3,6,7-萘四羧酸二酐、1,2,5,6-萘四羧酸二酐、3,4,9,10-苝四羧酸二酐、2,3,6,7-蒽四羧酸二酐、1,2,7,8-菲四羧酸二酐、1,2,3,4-丁烷四羧酸二酐、1,2,3,4-環丁烷四羧酸二酐、環戊烷四羧酸二酐、環己烷-1,2,3,4-四羧酸二酐、環己烷-1,2,4,5-四羧酸二酐、3,3’,4,4’-聯環己基四羧酸二酐、羰基-4,4’-雙(環己烷-1,2-二羧酸)二酐、亞甲基-4,4’-雙(環己烷-1,2-二羧酸)二酐、1,2-伸乙基-4,4’-雙(環己烷-1,2-二羧酸)二酐、1,1-亞乙烯基-4,4’-雙(環己烷-1,2-二羧酸)二酐、2,2-亞丙基-4,4’-雙(環己烷-1,2-二羧酸)二酐、乙二醇雙偏苯三酸酯二酐、1,2-(伸乙基)雙(偏苯三酸酐)、1,3-(三亞甲基)雙(偏苯三酸酐)、1,4-(四亞甲基)雙(偏苯三酸酐)、1,5-(五亞甲基)雙(偏苯三酸酐)、1,6-(六亞甲基)雙(偏苯三酸酐)、1,7-(七亞甲基)雙(偏苯三酸酐)、1,8-(八亞甲基)雙(偏苯三酸酐)、1,9-(九亞甲基)雙(偏苯三酸酐)、1,10-(十亞甲基)雙(偏苯三酸酐)、1,12-(十二亞甲基)雙(偏苯三酸酐)、1,16-(六十亞甲基)雙(偏苯三酸酐)、1,18-(十八亞甲基)雙(偏苯三酸酐)等。 Examples of the tetracarboxylic anhydride include pyromellitic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, and 3,3',4,4'-biphenyltetracarboxylate. Acid dianhydride, 4,4'-oxydiphthalic acid dianhydride, 1,2,3,4-benzenetetracarboxylic dianhydride, 3,3",4,4"-triphenyltetracarboxylic dianhydride , 3,3''',4,4'''-tetraphenylene tetracarboxylic dianhydride, 3,3''',4,4''''-pentaphenyltetracarboxylic dianhydride , methylene-4,4'-diphthalic acid dianhydride, 1,1-vinylidene-4,4'-diphthalic acid dianhydride, 2,2-propylene-4,4'-di Acid dianhydride, 1,2-extended ethyl-4,4'-dicarboxylic acid dianhydride, 1,3-trimethylene-4,4'-dicarboxylic acid dianhydride, 1,4-tetramethylene -4,4'-diphthalic acid dianhydride, 1,5-pentamethylene-4,4'-diphthalic acid dianhydride, thio-4,4'-diphthalic acid dianhydride, sulfonyl- 4,4'-diphthalic acid dianhydride, 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethylphosphorane dianhydride, 1,3-double ( 3,4-dicarboxyphenyl)phthalic anhydride, 1,4- Bis(3,4-dicarboxyphenyl)phthalic anhydride, 1,3-bis(3,4-dicarboxyphenoxy)phthalic anhydride, 1,4-bis(3,4-dicarboxyphenoxy) Benzene phthalic anhydride, 1,3-bis[2-(3,4-dicarboxyphenyl)-2-propyl]benzene dianhydride, 1,4-bis[2-(3,4-dicarboxyphenyl) -2-propyl]benzene phthalic anhydride, bis[3-(3,4-dicarboxyphenoxy)phenyl]methane dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1, 2,5,6-naphthalenetetracarboxylic dianhydride, 3,4,9,10-decanetetracarboxylic dianhydride, 2,3,6,7-nonanetetracarboxylic dianhydride, 1,2,7,8 - phenanthrenetetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, cyclopentane tetracarboxylic dianhydride, Cyclohexane-1,2,3,4-tetracarboxylic dianhydride, cyclohexane-1,2,4,5-tetracarboxylic dianhydride, 3,3',4,4'-bicyclohexyl Carboxylic dianhydride, carbonyl-4,4'-bis(cyclohexane-1,2-dicarboxylic acid) dianhydride, methylene-4,4'-bis(cyclohexane-1,2-dicarboxylate Acid) dianhydride, 1,2-extended ethyl-4,4'-bis(cyclohexane-1,2-dicarboxylic acid) dianhydride, 1,1-vinylidene-4,4'-double ( Cyclohexane-1,2-dicarboxylic acid) dianhydride, 2,2-propylene-4,4'-bis(cyclohexane-1,2-dicarboxylic acid) dianhydride, ethylene glycol double bias Pyrogallate dianhydride, 1,2-(extended ethyl) bis(trimellitic anhydride) ), 1,3-(trimethylene)bis(trimellitic anhydride), 1,4-(tetramethylene)bis(trimellitic anhydride), 1,5-(pentamethylene)bis(trimellitic anhydride), 1,6- (hexamethylene) bis(trimellitic anhydride), 1,7-(heptylene)bis(trimellitic anhydride), 1,8-(octamethylene)bis(trimellitic anhydride), 1,9-(nonamethylene Bis(trimellitic anhydride), 1,10-(decamethylene)bis(trimellitic anhydride), 1,12-(dodecyl)bis(trimellitic anhydride), 1,16-(hexamethylene) bis ( Trimellitic anhydride), 1,18-(octamethylidene)bis (trimellitic anhydride), and the like.

作為三羧酸酐,係可舉出例如苯三甲酸酐及氫化苯三甲酸酐等。 Examples of the tricarboxylic acid anhydride include benzenetricarboxylic anhydride and hydrogenated trimellitic anhydride.

作為胺成分雖可使用脂肪族二胺、芳香族二 胺等之二胺及脂肪族聚醚胺等之多元胺,但並不限定於此等胺類。又,此等胺成分亦可單獨或組合使用。 As the amine component, an aliphatic diamine or an aromatic two can be used. A polyamine such as a diamine such as an amine or an aliphatic polyether amine, but is not limited to such an amine. Further, these amine components may be used singly or in combination.

作為二胺,係可舉出例如p-伸苯基二胺(PPD)、1,3-苯二胺、2,4-甲苯二胺、2,5-甲苯二胺、2,6-甲苯二胺等之單苯核二胺,4,4’-二胺基二苯醚、3,3’-二胺基二苯醚、3,4’-二胺基二苯醚等之二胺基二苯醚類,4,4’-二胺基二苯基甲烷、3,3’-二甲基-4,4’-二胺基聯苯、2,2’-二甲基-4,4’-二胺基聯苯、3,3’-二胺基二苯醚、3,4’-二胺基二苯醚、4,4’-二胺基二苯醚、3,3’-二胺基二苯基硫化物、3,4’-二胺基二苯基硫化物等之二苯核二胺,1,3-雙(3-胺基苯基硫化物)苯、1,3-雙(4-胺基苯基硫化物)苯、1,4-雙(4-胺基苯基硫化物)苯等之三苯核二胺,3,3’-雙(3-胺基苯氧基)聯苯、3,3’-雙(4-胺基苯氧基)聯苯、4,4’-雙(3-胺基苯氧基)聯苯、2,2-雙〔3-(3-胺基苯氧基)苯基〕丙烷、2,2-雙〔3-(4-胺基苯氧基)苯基〕丙烷、2,2-雙〔4-(3-胺基苯氧基)苯基〕丙烷、2,2-雙〔4-(4-胺基苯氧基)苯基〕丙烷等之四苯核二胺等之芳香族二胺;1,2-二胺基乙烷、1,3-二胺基丙烷、1,4-二胺基丁烷、1,5-二胺基戊烷、1,6-二胺基已烷等之脂肪族二胺。作為脂肪族聚醚胺係可舉出乙二醇(及/或)丙二醇系之多元胺等。又,亦可使用如同下述之具有羧基的胺類。 Examples of the diamine include p-phenylenediamine (PPD), 1,3-phenylenediamine, 2,4-toluenediamine, 2,5-toluenediamine, and 2,6-toluene. a monophenylphosphine diamine such as an amine, a diamine group such as 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether or 3,4'-diaminodiphenyl ether Phenyl ethers, 4,4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4' -diaminobiphenyl, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diamine Diphenyl nuclear diamine such as diphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 1,3-bis(3-aminophenyl sulfide) benzene, 1,3-double (4-aminophenyl sulfide) benzene, 1,4-bis(4-aminophenyl sulfide) benzene, etc., triphenyl nucleodiamine, 3,3'-bis(3-aminophenoxy) Biphenyl, 3,3'-bis(4-aminophenoxy)biphenyl, 4,4'-bis(3-aminophenoxy)biphenyl, 2,2-bis[3-(3) -aminophenoxy)phenyl]propane, 2,2-bis[3-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(3-aminophenoxy) Phenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane An aromatic diamine such as tetraphenyl nuclear diamine; 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diamine An aliphatic diamine such as pentane or 1,6-diaminohexane. Examples of the aliphatic polyether amines include ethylene glycol (and/or) propylene glycol-based polyamines. Further, an amine having a carboxyl group as described below can also be used.

作為具有羧基之胺,係可舉出3,5-二胺基苯甲酸、2,5-二胺基苯甲酸、3,4-二胺基苯甲酸等之二胺基苯甲酸類、3,5-雙(3-胺基苯氧基)苯甲酸、3,5-雙(4-胺基 苯氧基)苯甲酸等之胺基苯氧基苯甲酸類、3,3’-二胺基-4,4’-二羧基聯苯等之羧基聯苯化合物類、3,3’-二胺基-4,4’-二羧基二苯基甲烷、3,3’-二羧基-4,4’-二胺基二苯基甲烷、2,2-雙〔4-胺基-3-羧基苯基〕丙烷等之羧基二苯基烷烴類、3,3’-二胺基-4,4’-二羧基二苯醚、4,4’-二胺基-3,3’-二羧基二苯醚等之羧基二苯醚化合物、3,3’-二胺基-4,4’-二羧基二苯基碸、4,4’-二胺基-3,3’-二羧基二苯基碸等之二苯基碸化合物等。 Examples of the amine having a carboxyl group include diaminobenzoic acid such as 3,5-diaminobenzoic acid, 2,5-diaminobenzoic acid or 3,4-diaminobenzoic acid, and 3, 5-bis(3-aminophenoxy)benzoic acid, 3,5-bis(4-amino group Aminophenoxybenzoic acid such as phenoxy)benzoic acid, carboxylbiphenyl compound such as 3,3'-diamino-4,4'-dicarboxybiphenyl, and 3,3'-diamine 4-,4'-dicarboxydiphenylmethane, 3,3'-dicarboxy-4,4'-diaminodiphenylmethane, 2,2-bis[4-amino-3-carboxybenzene a carboxydiphenylalkane such as propane, 3,3'-diamino-4,4'-dicarboxydiphenyl ether, 4,4'-diamino-3,3'-dicarboxydiphenyl a carboxydiphenyl ether compound such as ether, 3,3'-diamino-4,4'-dicarboxydiphenylanthracene, 4,4'-diamino-3,3'-dicarboxydiphenylanthracene A diphenyl hydrazine compound or the like.

作為異氰酸酯成分,雖然可使用芳香族二異氰酸酯及其異構物或多聚體,脂肪族二異氰酸酯類、脂環式二異氰酸酯類及其異構物等之二異氰酸酯或其他泛用的二異氰酸酯類,但並不限定於此等異氰酸酯。又,此等異氰酸酯成分亦可單獨或組合使用。 As the isocyanate component, an aromatic diisocyanate and an isomer or a polymer thereof, a diisocyanate such as an aliphatic diisocyanate, an alicyclic diisocyanate or an isomer thereof, or other general-purpose diisocyanate can be used. However, it is not limited to such an isocyanate. Further, these isocyanate components may be used singly or in combination.

作為二異氰酸酯,係可舉出例如4,4’-二苯基甲烷二異氰酸酯、甲苯二異氰酸酯、萘二異氰酸酯、伸茬基二異氰酸酯、聯苯二異氰酸酯、二苯基碸二異氰酸酯、二苯基醚二異氰酸酯等之芳香族二異氰酸酯及其異構物、多聚體、六亞甲基二異氰酸酯、異佛酮二異氰酸酯、二環己基甲烷二異氰酸酯等之脂肪族二異氰酸酯類,或氫化之芳香族二異氰酸酯的脂環式二異氰酸酯類及異構物,或其他汎用的二異氰酸酯類。 Examples of the diisocyanate include 4,4'-diphenylmethane diisocyanate, toluene diisocyanate, naphthalene diisocyanate, decyl diisocyanate, biphenyl diisocyanate, diphenyl sulfonium diisocyanate, and diphenyl group. An aromatic diisocyanate such as an ether diisocyanate and an aliphatic diisocyanate such as an isomer, a polymer, a hexamethylene diisocyanate, an isophorone diisocyanate or a dicyclohexylmethane diisocyanate, or a hydrogenated aromatic Alicyclic diisocyanates and isomers of diisocyanates, or other general purpose diisocyanates.

如以上說明之具有醯亞胺環或醯亞胺前驅體骨架的鹼溶解性樹脂亦可含有醯胺鍵。其為異氰酸酯與羧酸反應所得之醯胺鍵亦可,或由其他反應所得亦可。再 者,具有由其他加成及縮合而成之鍵結亦可。 The alkali-soluble resin having a quinone ring or a quinone imine precursor skeleton as described above may also contain a guanamine bond. It may also be a guanamine bond obtained by reacting an isocyanate with a carboxylic acid, or may be obtained by other reactions. again It may have a bond formed by other additions and condensations.

又,關於向該鹼溶解性樹脂之醯亞胺環或醯亞胺前驅體骨架的導入,係使用周知慣用的:具有羧基及酸酐基中任一者或兩者的鹼溶解性聚合物、寡聚物或單體亦可;例如,將此等周知慣用之鹼溶解性樹脂類單獨地或與上述羧酸酐成分組合,並與上述胺/異氰酸酯類反應而得之樹脂亦可。 Further, in the introduction of the quinone imine ring or the quinone imine precursor skeleton of the alkali-soluble resin, an alkali-soluble polymer having a carboxyl group or an acid anhydride group or both, and an oligosaccharide are conventionally used. The polymer or the monomer may be, for example, a resin obtained by reacting the above-mentioned alkali-soluble resin alone or in combination with the above-mentioned carboxylic anhydride component and reacting with the above amine/isocyanate.

關於此類具有鹼溶解性基與醯亞胺環或醯亞胺前驅體骨架之鹼溶解性樹脂的合成係可使用周知慣用的有機溶劑。作為該有機溶劑只要是不會與原料之羧酸酐類、胺類、異氰酸酯類反應,且可溶解此等原料的溶劑就沒有問題,其構造並無特別限制。其中因為原料之溶解性較高,故以N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、二甲基亞碸、γ-丁內酯等之非質子性溶劑為佳。 As the synthesis of such an alkali-soluble resin having an alkali-soluble group and a quinone imine ring or a quinone imine precursor skeleton, a well-known organic solvent can be used. The organic solvent is not particularly limited as long as it does not react with a carboxylic acid anhydride, an amine or an isocyanate of a raw material, and can dissolve such a raw material. The structure is not particularly limited. Among them, because of the high solubility of the raw materials, N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl alum, An aprotic solvent such as γ-butyrolactone is preferred.

如以上說明之具有羧基或酸酐基等之鹼溶解性基與醯亞胺環或醯亞胺前驅體骨架的鹼溶解性樹脂,為了對應光微影步驟,故其酸價以20~200mgKOH/g為佳,又以60~150mgKOH/g更佳。該酸價在20mgKOH/g以上時,對鹼的溶解性增加,並使顯影性良好,再者由於與光照射後之熱硬化成分的交聯度較高,故可得到充分的顯影對比。又,該酸價在200mgKOH/g以下時,在後述之光照射後之PEB(POST EXPOSURE BAKE)步驟中可抑制所謂的熱霧,且可增加流程餘裕。 The alkali-soluble resin having an alkali-soluble group such as a carboxyl group or an acid anhydride group and a quinone imine ring or a quinone imine precursor skeleton as described above has an acid value of 20 to 200 mgKOH/g in order to correspond to the photolithography step. Preferably, it is preferably 60 to 150 mgKOH/g. When the acid value is 20 mgKOH/g or more, the solubility in alkali is increased, and the developability is improved. Further, since the degree of crosslinking with the heat-curing component after light irradiation is high, sufficient development contrast can be obtained. Moreover, when the acid value is 200 mgKOH/g or less, so-called hot mist can be suppressed in the PEB (POST EXPOSURE BAKE) step after light irradiation described later, and the process margin can be increased.

又,該鹼溶解性樹脂的分子量在考慮顯影性及硬化塗膜特性後,以質量平均分子量1,000~100,000為佳,又以2,000~50,000更佳。該分子量在1,000以上時,在曝光、PEB後可獲得充分的耐顯影性及硬化物性。又,分子量在100,000以下時其鹼溶解性增加,且顯影性提升。 Further, the molecular weight of the alkali-soluble resin is preferably from 1,000 to 100,000 by mass average molecular weight, and more preferably from 2,000 to 50,000, in consideration of developability and film properties. When the molecular weight is 1,000 or more, sufficient development resistance and cured physical properties can be obtained after exposure and PEB. Further, when the molecular weight is 100,000 or less, the alkali solubility is increased, and the developability is improved.

含有具有醯亞胺環或醯亞胺前驅體骨架之鹼溶解性樹脂的樹脂組成物,在使用光鹼產生劑時,通常鹼溶解性樹脂之外,含有光鹼產生劑及熱反應性化合物;在使用光聚合起始劑時,鹼可溶性樹脂之外,含有光聚合起始劑及具有乙烯性不飽和鍵的化合物。又,作為樹脂成分,亦可併用含羧基之胺甲酸酯樹脂、含羧基之酚醛清漆樹脂等。 a resin composition containing an alkali-soluble resin having a quinone ring or a quinone imine precursor skeleton, and a photobase generator, in addition to an alkali-soluble resin, a photobase generator and a heat-reactive compound; When a photopolymerization initiator is used, a photopolymerization initiator and a compound having an ethylenically unsaturated bond are contained in addition to the alkali-soluble resin. Further, as the resin component, a carboxyl group-containing urethane resin or a carboxyl group-containing novolac resin may be used in combination.

光鹼產生劑係一種化合物,其透過紫外線及可見光等之光照射而分子構造產生變化,或者藉由分子裂解,生成一種以上之可作為後述之熱反應性化合物的聚合反應觸媒功能的鹼性物質。作為鹼性物質係可舉出例如二級胺、三級胺。 A photobase generator is a compound which undergoes light irradiation by ultraviolet light, visible light or the like to change its molecular structure, or molecularly cleaves to form more than one basicity of a polymerization catalyst function which can be used as a thermally reactive compound to be described later. substance. Examples of the basic substance include a secondary amine and a tertiary amine.

作為光鹼產生劑,係可舉出例如α-胺基苯乙酮化合物、肟酯化合物、或具有醯氧基亞胺基、N-甲醯基化芳香族胺基、N-醯基化芳香族胺基、硝苄基胺甲酸酯基及烷氧基苄基胺甲酸酯基等之取代基的化合物等,其中又以肟酯化合物、α-胺基苯乙酮化合物為佳。作為α-胺基苯乙酮化合物,特別是以具有2個以上氮原子者為佳。 Examples of the photobase generator include an α-aminoacetophenone compound, an oxime ester compound, or an anthracene imino group, an N-methylated aromatic amine group, and an N-methylated aromatic group. A compound such as a substituent of a group such as a group of aminino group, a benzylidene urethane group or an alkoxybenzyl amide group, and the like, and an oxime ester compound or an α-aminoacetophenone compound is preferred. The α-aminoacetophenone compound is particularly preferably one having two or more nitrogen atoms.

α-胺基苯乙酮化合物係分子中具有安息香醚鍵,在受到光照射後發生分子內部的裂解,生成發揮硬化觸媒作用的鹼性物質(胺)。作為α-胺基苯乙酮化合物的具體實例,可使用(4-嗎啉基苯甲醯基)-1-苄基-1-二甲基胺基丙烷(IRGACURE 369、商品名、BASF JAPAN公司製)、4-(甲基硫基苯甲醯基)-1-甲基-1-嗎啉基乙烷(IRGACURE 907、商品名、BASF JAPAN公司製)或2-(二甲基胺基)-2-〔(4-甲基苯基)甲基〕-1-〔4-(4-嗎啉基)苯基〕-1-丁酮(IRGACURE 379、商品名、BASF JAPAN公司製)等之市售化合物或其溶液。 The α-aminoacetophenone compound has a benzoin ether bond in the molecule, and undergoes cleavage inside the molecule after being irradiated with light to form a basic substance (amine) which acts as a sclering catalyst. As a specific example of the α-aminoacetophenone compound, (4-morpholinylbenzylidene)-1-benzyl-1-dimethylaminopropane (IRGACURE 369, trade name, BASF JAPAN) can be used. , 4-(methylthiobenzimidyl)-1-methyl-1-morpholinylethane (IRGACURE 907, trade name, manufactured by BASF JAPAN) or 2-(dimethylamino) -2-[(4-Methylphenyl)methyl]-1-[4-(4-morpholinyl)phenyl]-1-butanone (IRGACURE 379, trade name, manufactured by BASF JAPAN Co., Ltd.) Commercially available compounds or solutions thereof.

作為肟酯化合物,只要是可經由光照射生成鹼性物質的化合物任何皆可使用。作為該肟酯化合物,係可舉出市售品之BASF JAPAN公司製的CGI-325、IRGACURE-OXE01、IRGACURE-OXE02,ADEKA公司製N-1919、NCI-831等。又,日本專利第4344400號公報中所記載的,分子內具有2個肟酯基之化合物亦可適合使用。 As the oxime ester compound, any compound which can form a basic substance via light irradiation can be used. Examples of the oxime ester compound include CGI-325, IRGACURE-OXE01, IRGACURE-OXE02 manufactured by BASF JAPAN Co., Ltd., N-1919, NCI-831 manufactured by ADEKA Co., Ltd., and the like. Further, as described in Japanese Patent No. 4344400, a compound having two oxime ester groups in the molecule can also be suitably used.

此種光鹼產生劑,可單獨使用一種,亦可兩種以上組合使用。樹脂組成物中光鹼產生劑的調配量,較佳為相對於100質量份之熱反應性化合物為0.1~40質量份,更佳為0.1~30質量份。在0.1質量份以上時,可得到良好的光照射部/未照射部分之耐顯影性對比。又,在40質量份以下時其硬化物特性提升。 These photobase generators may be used alone or in combination of two or more. The amount of the photobase generator in the resin composition is preferably 0.1 to 40 parts by mass, more preferably 0.1 to 30 parts by mass, per 100 parts by mass of the thermally reactive compound. When the amount is 0.1 part by mass or more, a good contrast of the development resistance of the light-irradiated portion/unirradiated portion can be obtained. Moreover, when it is 40 mass parts or less, the hardening property improves.

熱反應性化合物係具有可因熱產生硬化反應 之官能基的樹脂,可舉出環氧樹脂、多官能氧雜環丁烷化合物等。 Thermally reactive compounds have a hardening reaction due to heat Examples of the functional group-containing resin include an epoxy resin and a polyfunctional oxetane compound.

上述之環氧樹脂係具有環氧基之樹脂,可使用任何周知的環氧樹脂。具體而言,可舉出分子中具有二個環氧基之二官能性環氧樹脂,以及分子中具有大量環氧基之多官能環氧樹脂等。此外,亦可是加氫過之二官能環氧化合物。 The above epoxy resin is an epoxy group-containing resin, and any well-known epoxy resin can be used. Specific examples thereof include a difunctional epoxy resin having two epoxy groups in the molecule, and a polyfunctional epoxy resin having a large amount of epoxy groups in the molecule. Further, it may be a hydrogenated difunctional epoxy compound.

作為上述環氧樹脂,係可舉出雙酚A型環氧樹脂、溴化環氧樹脂、酚醛清漆型環氧樹脂、雙酚F型環氧樹脂、氫化雙酚A型環氧樹脂、環氧丙基胺型環氧樹脂、乙內醯脲型環氧樹脂、脂環式環氧樹脂、三羥基苯基甲烷型環氧樹脂、聯二甲苯酚型或聯苯酚型環氧樹脂或該等混合物;雙酚S型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、四苯酚基乙烷型環氧樹脂、雜環類環氧樹脂、二環氧丙基酞酸酯樹脂、四環氧丙基二甲苯酚乙烷樹脂、含有萘基的環氧樹脂、具有二環戊二烯骨架的環氧樹脂、甲基丙烯酸環氧丙酯共聚系環氧樹脂、環己基馬來醯亞胺及甲基丙烯酸環氧丙酯之共聚環氧樹脂、CTBN改質環氧樹脂等。 Examples of the epoxy resin include bisphenol A epoxy resin, brominated epoxy resin, novolac epoxy resin, bisphenol F epoxy resin, hydrogenated bisphenol A epoxy resin, and epoxy resin. Propylamine type epoxy resin, intramethylene urea type epoxy resin, alicyclic epoxy resin, trihydroxyphenylmethane type epoxy resin, bixylenol type or biphenol type epoxy resin or the like Bisphenol S type epoxy resin, bisphenol A novolak type epoxy resin, tetraphenol ethane type epoxy resin, heterocyclic epoxy resin, diepoxypropyl phthalate resin, tetraglycol A xylenol ethane resin, an epoxy resin containing a naphthyl group, an epoxy resin having a dicyclopentadiene skeleton, a glycidyl methacrylate copolymer epoxy resin, a cyclohexyl maleimide and a Copolymer epoxy resin based on glycidyl acrylate, CTBN modified epoxy resin, and the like.

此等環氧樹脂係可單獨一種使用,亦可兩種以上併用。 These epoxy resins may be used alone or in combination of two or more.

作為上述熱反應性化合物之調配量,其與鹼溶解性樹脂之當量比(羧基等之鹼溶解性基:環氧基等之熱反應性基)較佳者為1:0.1~1:10。藉由如此配合比的 範圍,可成為使顯影良好且容易形成微細圖型者。上述當量比係以1:0.2~1:5更佳。 The amount of the thermally reactive compound to be added is preferably from 1:0.1 to 1:10 in terms of the equivalent ratio of the alkali-soluble resin (the alkali-soluble group such as a carboxyl group to a thermally reactive group such as an epoxy group). With such a ratio The range can be such that the development is good and the fine pattern is easily formed. The above equivalent ratio is preferably from 1:0.2 to 1:5.

作為光聚合起始劑係可使用周知的光聚合起始劑,例如可舉出α-胺基苯乙酮系光聚合起始劑、醯基膦氧化物系光聚合起始劑、安息香化合物、苯乙酮化合物、蔥醌化合物、噻吨酮化合物、縮酮化合物、二苯甲酮化合物、三級胺化合物及氧葱酮化合物等。 A known photopolymerization initiator can be used as the photopolymerization initiator, and examples thereof include an α-aminoacetophenone photopolymerization initiator, a mercaptophosphine oxide photopolymerization initiator, and a benzoin compound. An acetophenone compound, an onion compound, a thioxanthone compound, a ketal compound, a benzophenone compound, a tertiary amine compound, and a oxonone compound.

又,作為具有乙烯性不飽和鍵之化合物係可使用周知的化合物,2-羥基乙基丙烯酸酯、2-羥基丙基丙烯酸酯等之羥基烷基丙烯酸酯類;乙二醇、甲氧基四乙二醇、聚乙二醇、丙二醇等之甘醇之單或二丙烯酸酯類;己二醇、三羥甲基丙烷、季戊四醇、二季戊四醇、三-羥基乙基異三聚氰酸酯等之多元醇或此等之環氧乙烷加成物或環氧丙烷加成物等之多元丙烯酸酯類;苯氧基丙烯酸酯、雙酚A二丙烯酸酯、及此等之酚類的環氧乙烷加成物或環氧丙烷加成物等之丙烯酸酯類等。 Further, as the compound having an ethylenically unsaturated bond, a well-known compound, a hydroxyalkyl acrylate such as 2-hydroxyethyl acrylate or 2-hydroxypropyl acrylate; ethylene glycol or methoxy group can be used. a mono- or diacrylate of glycol such as ethylene glycol, polyethylene glycol or propylene glycol; hexanediol, trimethylolpropane, pentaerythritol, dipentaerythritol, tris-hydroxyethyl isocyanurate, etc. a polyhydric alcohol or a polyacrylate of such an ethylene oxide adduct or a propylene oxide adduct; a phenoxy acrylate, a bisphenol A diacrylate, and the phenolic epoxy B An acrylate or the like such as an alkane adduct or a propylene oxide adduct.

(接著層(A)) (Next layer (A))

作為構成接著層(A)之鹼顯影性樹脂組成物,只要是包含下述樹脂之組成物即可,光硬化性樹脂組成物及熱硬化性樹脂組成物均可使用:含有酚性羥基、硫醇基及羧基中一種以上之官能基,且可以鹼溶液顯影之樹脂。較佳者可舉出包含:具有2個以上酚性羥基之化合物、含羧基樹脂、具有酚性羥基及羧基之化合物、具有2個以上硫醇基 之化合物的樹脂組成物,可使用周知慣用之物。 The alkali-developable resin composition constituting the adhesive layer (A) may be any composition containing the following resin, and both the photocurable resin composition and the thermosetting resin composition may be used: phenolic hydroxyl group, sulfur A resin which is one or more functional groups of an alcohol group and a carboxyl group and which can be developed in an alkali solution. Preferred examples include a compound having two or more phenolic hydroxyl groups, a carboxyl group-containing resin, a compound having a phenolic hydroxyl group and a carboxyl group, and having two or more thiol groups. As the resin composition of the compound, a conventionally known one can be used.

具體而言,可舉出例如以往作為阻焊劑組成物使用之光硬化性熱硬化性樹脂組成物,其包含:含羧基樹脂或含羧基感光性樹脂、具有乙烯性不飽和鍵之化合物、光聚合起始劑、及熱反應性化合物。又,亦可使用包含:含羧基之胺甲酸酯樹脂、具有羧基之樹脂、光鹼產生劑及熱硬化成分的樹脂組成物。該樹脂組成物係以由光鹼產生劑生成的鹼作為觸媒,藉由曝光後的加熱使具有羧基之胺甲酸酯樹脂及熱硬化成分進行加成反應,未曝光部分可藉由以鹼溶液去除進行顯影。 Specifically, for example, a photocurable thermosetting resin composition which is conventionally used as a solder resist composition, which comprises a carboxyl group-containing resin or a carboxyl group-containing photosensitive resin, a compound having an ethylenically unsaturated bond, and photopolymerization Starting agent, and heat reactive compound. Further, a resin composition comprising a carboxyl group-containing urethane resin, a carboxyl group-containing resin, a photobase generator, and a thermosetting component can also be used. In the resin composition, a base formed by a photobase generator is used as a catalyst, and a urethane resin having a carboxyl group and a thermosetting component are subjected to an addition reaction by heating after exposure, and the unexposed portion can be made by using a base. The solution was removed for development.

作為構成了用於接著層(A)之樹脂組成物的各種材料,除了可使用周知慣用之物以外,用於上述保護層(B)者亦同樣地可以使用。 As the various materials constituting the resin composition for the adhesive layer (A), those used for the protective layer (B) can be similarly used, except that a conventionally known one can be used.

關於用於上述接著層(A)及保護層(B)之樹脂組成物,能以提升所得之硬化物的可撓性及指觸乾燥性為目的來調配周知慣用的高分子樹脂。作為此種高分子樹脂,係可舉出纖維素系、聚酯系、苯氧基樹脂系聚合物、聚乙烯縮醛系、聚乙烯丁醛系、聚醯胺系、聚醯胺醯亞胺系黏合劑聚合物、嵌段共聚物、彈性體等。該高分子樹脂可使用單獨一種,亦可併用兩種以上。 The resin composition used for the above-mentioned adhesive layer (A) and the protective layer (B) can be blended with a conventional polymer resin for the purpose of improving the flexibility and dryness of the cured product. Examples of such a polymer resin include cellulose-based, polyester-based, phenoxy resin-based polymers, polyvinyl acetal-based, polyvinyl butyral-based, polyamid-based, and polyamidimide. Adhesive polymers, block copolymers, elastomers, and the like. These polymer resins may be used alone or in combination of two or more.

又,為了抑制硬化物的硬化收縮並提升密合性、硬度等特性,在接著層(A)及保護層(B)所使用之樹脂組成物中可調配無機填充劑。作為此種無機填充劑可舉出例如硫酸鋇、無定型二氧化矽、熔融二氧化矽、球狀二氧 化矽、滑石、黏土、碳酸鎂、碳酸鈣、氧化鋁、氫氧化鋁、氮化矽、氮化鋁、氮化硼、新堡矽藻土等。 Further, in order to suppress the curing shrinkage of the cured product and to improve the properties such as adhesion and hardness, an inorganic filler may be blended in the resin composition used for the adhesive layer (A) and the protective layer (B). Examples of such an inorganic filler include barium sulfate, amorphous ceria, molten ceria, and spherical dioxygen. Plutonium, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, tantalum nitride, aluminum nitride, boron nitride, Newcastle diatomaceous earth, and the like.

為了樹脂組成物的調製,以及塗佈於基材和載體膜時的黏度調整,在接著層(A)及保護層(B)所使用之樹脂組成物中可使用有機溶劑。作為此種有機溶劑係可舉出酮類、芳香族烴類、甘醇醚類、甘醇醚乙酸酯類、酯類、醇類、脂肪族烴、石油系溶劑等。此種有機溶劑可使用單獨一種,或以兩種以上之混合物使用亦可。 For the preparation of the resin composition and the viscosity adjustment when applied to the substrate and the carrier film, an organic solvent can be used for the resin composition used in the adhesive layer (A) and the protective layer (B). Examples of such an organic solvent include ketones, aromatic hydrocarbons, glycol ethers, glycol ether acetates, esters, alcohols, aliphatic hydrocarbons, and petroleum solvents. These organic solvents may be used singly or in combination of two or more.

在接著層(A)及保護層(B)所使用之樹脂組成物中,應其所需可再調配著色劑、巰基化合物、密合促進劑、抗氧化劑、紫外線吸收劑等成分,這些可使用在電子材料領域中周知慣用之物。又,可適當地調配微細二氧化矽、水滑石、有機膨土、蒙脫石等周知慣用的增黏劑、聚矽氧系、氟系、高分子系等之消泡劑及均染劑、矽烷耦合劑、防鏽劑等周知慣用的添加劑類。 In the resin composition used in the adhesive layer (A) and the protective layer (B), a colorant, a mercapto compound, an adhesion promoter, an antioxidant, an ultraviolet absorber, and the like may be further blended as needed. A well-known object in the field of electronic materials. In addition, a conventionally known tackifier such as fine cerium oxide, hydrotalcite, organic bentonite, or montmorillonite, a defoaming agent such as a polyfluorene-based system, a fluorine-based polymer, or a polymer, and a leveling agent may be appropriately formulated. A well-known additive such as a decane coupling agent or a rust inhibitor.

本發明之積層構造體中,從對銅電路之追蹤性的觀點來看,接著層(A)以較保護層(B)更厚者為佳。 In the laminated structure of the present invention, the adhesion layer (A) is preferably thicker than the protective layer (B) from the viewpoint of traceability to the copper circuit.

本發明之積層構造體係可使用於可撓性印刷配線板之彎曲部分及非彎曲部分中的至少任一者,理想的是可用於兩者,藉此可讓具備充分對彎折耐久性之可撓性印刷配線板同時改善成本及作業性。具體而言,本發明之積層構造體係可用作可撓性印刷配線板之覆蓋膜、阻焊劑及層間絕緣材料中的至少任一用途。 The laminated structure system of the present invention can be used for at least one of a curved portion and a non-curved portion of the flexible printed wiring board, and is preferably used for both, thereby providing sufficient durability for bending. The flexible printed wiring board improves both cost and workability. Specifically, the laminated structure system of the present invention can be used as at least one of a cover film, a solder resist, and an interlayer insulating material of a flexible printed wiring board.

(可撓性印刷配線板的製造方法) (Method of Manufacturing Flexible Printed Wiring Board)

在本發明中,係在可撓性印刷配線基材上直接或透過乾膜來形成上述積層構造體層,再透過光照射使之圖型化,然後藉由顯影液一次地形成圖型來形成絕緣膜,可獲得可撓性印刷配線板。雖然以往在阻焊劑層單層之彎曲性等特性不佳,若按照本發明製成由接著層(A)與保護層(B)而成之積層構造體,並且保護層與接著層之膜厚的比例及保護層與接著層之顯影速度的比例分別落於前述範圍內,可使鹼顯影性與耐熱性及彎曲性等機械特性良好地兼備。 In the present invention, the laminated structure layer is formed directly or through a dry film on a flexible printed wiring substrate, and then patterned by light irradiation, and then patterned by forming a pattern once by a developer. A film can be used to obtain a flexible printed wiring board. Although the characteristics such as the bendability of the single layer of the solder resist layer are not good in the past, the laminated structure formed by the adhesive layer (A) and the protective layer (B) is formed according to the present invention, and the film thickness of the protective layer and the adhesive layer is formed. The ratio of the ratio of the protective layer and the development speed of the adhesive layer falls within the above range, and the alkali developability and the mechanical properties such as heat resistance and flexibility can be satisfactorily combined.

以下,關於由本發明之積層構造體製造本發明之可撓性印刷配線板的方法之一例中,接著層(A)及保護層(B)兩者使用了含有光鹼產生劑及熱反應性化合物之樹脂組成物之情形,基於圖1所示之步驟圖來說明。此外,在使用以往作為阻焊劑組成物所使用的含有含羧基樹脂或含羧基感光性樹脂、具有乙烯性不飽和鍵之化合物、光聚合起始劑、及熱反應性化合物之光硬化性熱硬化性樹脂組成物之情形中,可採取與阻焊劑相同的步驟。 In the following, in an example of the method for producing the flexible printed wiring board of the present invention from the laminated structure of the present invention, both the layer (A) and the protective layer (B) contain a photobase generator and a thermally reactive compound. The case of the resin composition is explained based on the step diagram shown in FIG. In addition, photocuring thermosetting using a carboxyl group-containing resin or a carboxyl group-containing photosensitive resin, a compound having an ethylenically unsaturated bond, a photopolymerization initiator, and a heat-reactive compound, which are conventionally used as a solder resist composition, is used. In the case of the resin composition, the same steps as the solder resist can be employed.

〔積層步驟〕 [Lamination step]

積層步驟係在基材上形成本發明之積層構造體的步驟。圖1中的積層步驟係顯示在已形成銅電路2之可撓性印刷配線基材1上,形成由接著層3及保護層4而成之積層構造體的狀態,前述接著層3係由鹼顯影型樹脂組成物所構成。 The lamination step is a step of forming the laminated structure of the present invention on a substrate. The lamination step in FIG. 1 is a state in which a laminated structure formed by the adhesive layer 3 and the protective layer 4 is formed on the flexible printed wiring substrate 1 on which the copper circuit 2 has been formed, and the adhesive layer 3 is made of a base. A composition of a developing resin composition.

此處構成積層構造體之各層,例如,可藉由將構成接著層3及保護層4之樹脂組成物依序塗佈、乾燥於基材上,以直接形成接著層3及保護層4的方法;或者將構成接著層3及保護層4之樹脂組成物各自以乾膜的型態依序層合於基材上的方法來形成。又,亦可藉由已成為二層構造之乾膜形態的積層構造體層合於基材上的方法來形成。此種情形下使積層構造體的至少單面以薄膜支撐或保護。作為使用的薄膜係可使用能夠從積層構造體剝離的塑膠薄膜。關於薄膜的厚度雖無特別限制,但一般而言在10~150μm的範圍適當地選擇。從塗膜強度的觀點來看,各層間之介面亦可是融合的。 Here, each layer constituting the laminated structure, for example, a method in which the resin composition constituting the adhesive layer 3 and the protective layer 4 is sequentially applied and dried on a substrate to directly form the adhesive layer 3 and the protective layer 4 Or the resin composition constituting the adhesive layer 3 and the protective layer 4 is formed by sequentially laminating the resin composition on the substrate in a dry film form. Further, it may be formed by a method in which a laminated structure having a dry film form of a two-layer structure is laminated on a substrate. In this case, at least one side of the laminated structure is supported or protected by a film. As the film to be used, a plastic film which can be peeled off from the laminated structure can be used. Although the thickness of the film is not particularly limited, it is generally selected in the range of 10 to 150 μm. From the viewpoint of film strength, the interfaces between the layers may also be fused.

樹脂組成物對基材之塗佈方法係以刮刀塗佈機、唇式塗佈機、逗點式塗佈機、薄膜塗佈機等周知的方法即可。又,乾燥方法係使用熱風循環式乾燥爐、IR爐、加熱板、對流烘箱等具備以蒸氣為加熱方式之熱源者,並使其逆流接觸乾燥機內之熱風的方法,以及用噴嘴噴射支撐體的方法等周知的方法即可。 The method of applying the resin composition to the substrate may be a well-known method such as a knife coater, a lip coater, a comma coater, or a film coater. Further, the drying method is a method using a hot air circulating drying oven, an IR furnace, a heating plate, a convection oven, or the like, which has a heat source such as a steam heating method, and a reverse flow of the hot air in the dryer, and a nozzle sprayed support. The method can be a well-known method.

此處,基材係已預先形成電路之可撓性印刷配線基材。又,為了獲得預期效果以外的其他效果,在接著層3及保護層4之間亦可設置附加層。 Here, the substrate is a flexible printed wiring substrate in which a circuit has been formed in advance. Further, in order to obtain effects other than the intended effect, an additional layer may be provided between the adhesive layer 3 and the protective layer 4.

〔光照射步驟〕 [Light irradiation step]

光照射步驟係對負型之圖型形狀以光照射讓樹脂組成物中所含之光鹼產生劑活性化,使光照射部硬化的步驟。 在此光照射步驟中,藉由在保護層4上配置遮罩5,並對負型之圖型形狀進行光照射,使樹脂組成物所含之光鹼產生劑活性化,使光照射部硬化。 The light irradiation step is a step of activating the photobase generating agent contained in the resin composition by light irradiation to the negative pattern shape, and curing the light irradiation portion. In the light irradiation step, the mask 5 is placed on the protective layer 4, and the negative pattern is irradiated with light to activate the photobase generator contained in the resin composition to harden the light irradiation portion. .

在此步驟中,由於在光照射部生成之鹼而使得光鹼產生劑不安定化,並產生來自光鹼產生劑之鹼性物質(以下有時簡稱為「鹼」)。此產生之鹼會讓光鹼產生劑不安定化,進而鹼再產生。藉由以此方式生成鹼並化學性增殖至各層深處,被認為是可充分地硬化至各層深處。在其後之熱硬化時,由於此鹼在用作鹼顯影性樹脂與熱反應性化合物之加成反應觸媒的同時,亦進行加成反應,故在光照射部中的各層均充分地熱硬化至深層。由於此情況之樹脂組成物的硬化係例如藉由熱反應之環氧的開環反應,相較於以光反應進行的情形更能抑制應變或硬化收縮。 In this step, the photobase generator is not stabilized by the alkali generated in the light-irradiating portion, and an alkaline substance derived from a photobase generator (hereinafter sometimes simply referred to as "base") is generated. The resulting base causes the photobase generator to become unstable and the base to be regenerated. By generating a base in this manner and chemically proliferating to the depth of each layer, it is considered that it can be sufficiently hardened to the depth of each layer. In the subsequent thermal hardening, since the alkali is used as an addition reaction catalyst for the alkali-developable resin and the thermally reactive compound, an addition reaction is also performed, so that each layer in the light-irradiating portion is sufficiently thermally hardened. To the deeper level. Since the hardening of the resin composition in this case is, for example, a ring-opening reaction of an epoxy by thermal reaction, strain or hardening shrinkage can be suppressed more than in the case of photoreaction.

作為在光照射中使用的光照射機,係可使用直接描繪裝置(例如,藉由來自電腦之CAD資料,直接以雷射描繪圖像的雷射直接成像裝置)、搭載了金屬鹵素燈之光照射機、搭載了(超)高壓水銀燈之光照射機、搭載了水銀短弧燈之光照射機、或使用了(超)高壓水銀燈等之紫外線燈的直接描繪裝置。圖型形狀之光照射用遮罩係負型遮罩。 As a light irradiation machine used for light irradiation, a direct drawing device (for example, a laser direct imaging device that directly draws an image by laser from CAD data of a computer) and a light of a metal halide lamp can be used. An irradiation machine, a light irradiation machine equipped with a (super) high-pressure mercury lamp, a light irradiation machine equipped with a mercury short-arc lamp, or a direct drawing device using an ultraviolet lamp such as a (ultra) high-pressure mercury lamp. The mask-shaped light-illuminating mask is a negative mask.

作為活性能量射線係使用最大波長在350~410nm範圍內的雷射光或散射光為佳。藉由讓最大波長落於此範圍中,可效率良好地使光鹼產生劑活性化。只要是使用此範圍的雷射光,雷射的種類不論是氣體雷射或固 體雷射均可。又,雖然其光照射量係依膜厚等而異,但一般為100~1500mJ/cm2,較佳為300~1500mJ/cm2的範圍內。 As the active energy ray system, it is preferred to use laser light or scattered light having a maximum wavelength in the range of 350 to 410 nm. By allowing the maximum wavelength to fall within this range, the photobase generator can be efficiently activated. As long as the laser light of this range is used, the type of laser can be either a gas laser or a solid laser. Further, while the light irradiation amount different lines depending on the film thickness and the like, but is generally 100 ~ 1500mJ / cm 2, preferably in the range of 300 ~ 1500mJ / cm 2 in.

〔加熱步驟〕 [heating step]

加熱步驟係指透過加熱讓光照射部硬化,並可藉由在光照射步驟中所產生之鹼使硬化直至深處。該加熱步驟係藉由在光照射步驟後加熱接著層3及保護層4,使光照射部硬化之步驟,係稱為所謂「PEB(POST EXPOSURE BAKE)步驟」的步驟。據此,藉由光照射步驟中產生之鹼使各層充分地硬化至深處,可得到硬化特性優異的圖型層。 The heating step means that the light-irradiating portion is hardened by heating, and can be hardened to a depth by the alkali generated in the light-irradiating step. This heating step is a step of curing the light irradiation portion by heating the adhesive layer 3 and the protective layer 4 after the light irradiation step, and is referred to as a "PEB (POST EXPOSURE BAKE) step". According to this, each layer is sufficiently hardened to a deep point by the alkali generated in the light irradiation step, whereby a pattern layer having excellent curing properties can be obtained.

例如,加熱步驟係以低於未受照射之樹脂組成物的發熱開始溫度或發熱峰值溫度,且高於已受光照射之樹脂組成物的發熱開始溫度或發熱峰值溫度的溫度來加熱為佳。藉由如此加熱可選擇性地僅硬化光照射部。 For example, the heating step is preferably performed at a temperature lower than a heat generation start temperature or a heat generation peak temperature of the unexposed resin composition, and higher than a heat generation start temperature or a heat generation peak temperature of the resin composition which has been irradiated with light. By heating in this way, only the light irradiation portion can be selectively hardened.

此時之加熱溫度係以樹脂組成物中的光照射部熱硬化,但未照射部分不熱硬化的溫度為佳。加熱溫度係例如80~140℃,藉由加熱溫度定為80℃以上,可使光照射部充分地硬化。另一方面,藉由加熱溫度定為140℃以下,可選擇性地僅硬化光照射部。加熱時間係例如10~100分鐘。加熱方法與上述乾燥方法相同。再者,由於未照射部分中沒有從光鹼產生劑產生鹼,故熱硬化被抑制。 The heating temperature at this time is thermally hardened by the light-irradiating portion in the resin composition, but the temperature at which the unirradiated portion is not thermally cured is preferable. The heating temperature is, for example, 80 to 140 ° C, and the heating temperature is set to 80 ° C or higher, whereby the light-irradiating portion can be sufficiently cured. On the other hand, by setting the heating temperature to 140 ° C or lower, only the light irradiation portion can be selectively cured. The heating time is, for example, 10 to 100 minutes. The heating method is the same as the above drying method. Further, since no alkali is generated from the photobase generating agent in the unirradiated portion, thermal hardening is suppressed.

〔顯影步驟〕 [development step]

顯影步驟係藉由鹼顯影去除未照射部分,以形成負型之圖型層者。圖1中的顯影步驟,係顯示藉由以鹼性水溶液使接著層3及保護層4顯影,去除未照射部分並形成負型之圖型層的步驟。作為顯影方法係可使用浸漬法、沐浴法、噴霧法、刷塗法等周知的方法。又,作為顯影液係可使用氫氧化鉀、氫氧化鈉、碳酸鈉、碳酸鉀、磷酸鈉、矽酸鈉、氨、乙醇胺等之胺類、氫氧化四甲基銨水溶液(TMAH)等之鹼水溶液或此等之混合液。 The developing step is to remove the unirradiated portion by alkali development to form a negative pattern layer. The developing step in Fig. 1 shows a step of removing the unirradiated portion and forming a negative pattern layer by developing the adhesive layer 3 and the protective layer 4 with an aqueous alkaline solution. As the developing method, a well-known method such as a dipping method, a bathing method, a spraying method, or a brushing method can be used. Further, as the developer, an alkali such as potassium hydroxide, sodium hydroxide, sodium carbonate, potassium carbonate, sodium phosphate, sodium citrate, ammonia or ethanolamine, or a base such as tetramethylammonium hydroxide aqueous solution (TMAH) can be used. An aqueous solution or a mixture of these.

〔第二光照射步驟〕 [Second light irradiation step]

在顯影步驟之後,係以包含第二光照射步驟為佳。此第二光照射步驟係為了使光照射步驟之圖型層內尚未活性化之殘留光鹼產生劑產生活性化並使鹼產生,應其所需而照射紫外線的步驟。第二光照射步驟中的紫外線波長及光照射量(曝光量)可與上述光照射步驟相同,亦可相異。光照射量(曝光量)係例如150~2000mJ/cm2Preferably, after the developing step, the step of including the second light irradiation is preferred. This second light irradiation step is a step of irradiating ultraviolet rays as needed in order to activate the residual photobase generator which has not been activated in the pattern layer of the light irradiation step and to generate a base. The ultraviolet light wavelength and the light irradiation amount (exposure amount) in the second light irradiation step may be the same as or different from the light irradiation step described above. Light irradiation amount (exposure amount) based, for example, 150 ~ 2000mJ / cm 2.

〔熱硬化步驟〕 [thermal hardening step]

在顯影步驟之後,係以再包含熱硬化(後硬化)之熱硬化步驟為佳。此熱硬化步驟係為了使圖型層充分地熱硬化,而應其所需進行熱硬化(後硬化)的步驟。在顯影步驟後第二光照射步驟及熱硬化步驟皆進行的情形中,熱硬化步驟係於第二光照射步驟之後進行為佳。 After the developing step, a thermal hardening step further including thermal hardening (post hardening) is preferred. This heat hardening step is a step of thermally hardening (post-hardening) required for the pattern layer to be sufficiently thermally hardened. In the case where both the second light irradiation step and the heat hardening step are performed after the development step, it is preferred that the heat hardening step is performed after the second light irradiation step.

此熱硬化步驟,係藉由因光照射步驟或者光照射步驟及第二光照射步驟而由光鹼產生劑產生之鹼來使圖型層充分地熱硬化。熱硬化步驟的時間點由於未照射部分已經去除,故熱硬化步驟可用未照射之樹脂組成物的硬化反應開始溫度以上的溫度進行,藉此可使圖型層充分地熱硬化。加熱溫度係例如150℃以上。 In the thermal hardening step, the pattern layer is sufficiently thermally cured by the alkali generated by the photobase generator by the light irradiation step or the light irradiation step and the second light irradiation step. Since the unheated portion has been removed at the time point of the heat hardening step, the heat hardening step can be performed at a temperature higher than the hardening reaction starting temperature of the unirradiated resin composition, whereby the patterned layer can be sufficiently thermally hardened. The heating temperature is, for example, 150 ° C or higher.

實施例 Example

以下使用實施例更詳細地說明本發明。 The invention will be described in more detail below using examples.

(合成例1) (Synthesis Example 1)

<具有醯亞胺環之鹼溶解性樹脂的合成> <Synthesis of alkali-soluble resin having a quinone ring>

在安裝了攪拌機、氮導入管、分餾環及冷卻環之可分離式三口燒瓶中,添加3,5-二胺基苯甲酸12.5g、2,2’-雙〔4-(4-胺基苯氧基)苯基〕丙烷8.2g、NMP 30g、γ-丁內酯30g、4,4’-氧基二酞酸酐27.9g、苯三甲酸酐3.8g,並在氮氣環境下以室溫、100rpm攪拌4小時。接著添加甲苯20g,並以矽浴溫度180℃、150rpm餾去甲苯及水並同時攪拌4小時,得到含醯亞胺環之鹼溶解性樹脂溶液。其後,以使固形分成為30質量%之方式添加γ-丁內酯。所得樹脂溶液係固形分酸價86mgKOH/g、Mw10000。 In a separable three-necked flask equipped with a stirrer, a nitrogen introduction tube, a fractionation ring and a cooling ring, 12.5 g of 3,5-diaminobenzoic acid and 2,2'-bis[4-(4-aminobenzene) were added. 8.2 g of oxy)phenyl]propane, 30 g of NMP, 30 g of γ-butyrolactone, 27.9 g of 4,4′-oxydiphthalic anhydride, 3.8 g of benzenetricarboxylic anhydride, and stirred at room temperature and 100 rpm under a nitrogen atmosphere. 4 hours. Then, 20 g of toluene was added, and toluene and water were distilled off at a bath temperature of 180 ° C and 150 rpm while stirring for 4 hours to obtain an alkali-soluble resin solution containing a quinone ring. Thereafter, γ-butyrolactone was added so that the solid content became 30% by mass. The obtained resin solution had a solid content of 86 mg KOH/g and Mw 10000.

(合成例2) (Synthesis Example 2)

<含羧基之胺甲酸酯樹脂的合成> <Synthesis of carboxyl group-containing urethane resin>

在具備攪拌裝置、溫度計及冷凝器之反應容器中放入由1,5-戊二醇及1,6-已二醇所衍生之聚碳酸酯二醇(旭化成化學(股)製、T5650J、數平均分子量800)2400g(3莫耳)、二羥甲基丙酸603g(4.5莫耳),以及作為單羥基化合物之2-羥基乙基丙烯酸酯238g(2.6莫耳)。接著放入作為聚異氰酸酯之異佛酮二異氰酸酯1887g(8.5莫耳),攪拌並同時加熱至60℃後停止,然後在反應容器內溫度開始下降之時再度加熱,並以80℃持續攪拌,再以紅外線吸收譜確認異氰酸酯基之吸收譜(2280cm-1)已消失後結束反應。其後以使固形分成為50質量%之方式添加卡必醇乙酸酯,所得之含羧基之胺甲酸酯樹脂之固形分酸價為50mg KOH/g。 A polycarbonate diol derived from 1,5-pentanediol and 1,6-hexanediol is placed in a reaction vessel equipped with a stirring device, a thermometer, and a condenser (Asahi Kasei Chemical Co., Ltd., T5650J, number The average molecular weight was 800) 2400 g (3 moles), dimethylglycolic acid 603 g (4.5 moles), and 238 g (2.6 moles) of 2-hydroxyethyl acrylate as a monohydroxy compound. Next, 1887 g (8.5 mol) of isophorone diisocyanate as a polyisocyanate was placed, stirred and heated to 60 ° C, and then stopped, and then heated again at the temperature in the reaction vessel, and continuously stirred at 80 ° C. It was confirmed by infrared absorption spectrum that the absorption spectrum (2280 cm -1 ) of the isocyanate group had disappeared and the reaction was terminated. Thereafter, carbitol acetate was added so that the solid content became 50% by mass, and the obtained carboxyl group-containing urethane resin had a solid content of 50 mg KOH/g.

<構成各層之樹脂組成物的調製> <Preparation of resin composition constituting each layer>

遵從下述表1及表2中記載之調配法,分別調配實施例及比較例中所記載的材料,並以攪拌機預先混合後,再以三輥輾磨機捏合,調製出構成接著層及保護層之樹脂組成物。表中之值只要無特別說明,即為質量份。 The materials described in the examples and the comparative examples were prepared according to the blending methods described in the following Tables 1 and 2, and pre-mixed with a stirrer, and then kneaded by a three-roll honing machine to prepare an adhesive layer and protect the laminate. The resin composition of the layer. The values in the table are parts by mass unless otherwise specified.

<接著層(A)之形成> <Formation of layer (A)>

準備已形成銅厚18μm之電路的可撓性印刷配線基材,並使用MEC公司製的CB-801Y進行前處理。其後在已進行前處理之可撓性印刷配線基材上,以使乾燥後之膜厚成為下述表1及表2所示的膜厚之方式塗佈各接著層用 之樹脂組成物。其後用熱風循環式乾燥爐以80℃/30分鐘進行乾燥,形成由樹脂組成物而成之接著層(A)。另外,關於比較例1並未形成接著層。 A flexible printed wiring substrate having a circuit having a copper thickness of 18 μm was prepared and pretreated by using CB-801Y manufactured by MEC Corporation. Then, on the flexible printed wiring substrate which has been subjected to the pretreatment, each of the adhesive layers is applied so that the film thickness after drying becomes the film thickness shown in the following Tables 1 and 2. The resin composition. Thereafter, it was dried at 80 ° C / 30 minutes in a hot air circulating drying oven to form an adhesive layer (A) composed of a resin composition. Further, in Comparative Example 1, no adhesion layer was formed.

<保護層(B)之形成> <Formation of protective layer (B)>

在上述接著層(A)上,以使乾燥後之膜厚成為下述表1及表2所示的膜厚之方式塗佈各保護層用之樹脂組成物。其後用熱風循環式乾燥爐以80℃/30分鐘進行乾燥,形成由樹脂組成物而成之保護層(B)。 In the above-mentioned adhesive layer (A), the resin composition for each protective layer was applied so that the film thickness after drying became the film thickness shown by the following Table 1 and Table 2. Thereafter, it was dried at 80 ° C / 30 minutes in a hot air circulating drying oven to form a protective layer (B) composed of a resin composition.

接著層(A)及保護層(B)的合計膜厚全為20μm。 Next, the total film thickness of the layer (A) and the protective layer (B) was 20 μm.

<膜厚之測定> <Measurement of film thickness>

膜厚係使用三豐公司製測微計MDC-25MX進行測定。 The film thickness was measured using a micrometer MDC-25MX manufactured by Mitutoyo Corporation.

<顯影速度之測定> <Measurement of development speed>

在已形成銅厚18μm之電路的可撓性印刷配線基材上塗佈各樹脂組成物,並用熱風循環式乾燥爐以80℃/30分鐘進行乾燥。其後將基材浸漬於30℃‧1質量%之碳酸鈉水溶液中,測定到塗膜溶解為止的時間。到塗膜溶解為止的時間定為顯影時間〔秒〕、膜厚定為膜厚〔μm〕時,顯影速度以下述式表示。 Each resin composition was applied onto a flexible printed wiring substrate on which a circuit having a copper thickness of 18 μm was formed, and dried in a hot air circulating drying oven at 80 ° C / 30 minutes. Thereafter, the substrate was immersed in an aqueous solution of sodium carbonate at 30 ° C in an amount of ‧1% by mass, and the time until the coating film was dissolved was measured. When the time until the coating film is dissolved is set to the development time [second] and the film thickness is set to the film thickness [μm], the development speed is expressed by the following formula.

顯影速度〔μm/秒〕=膜厚〔μm〕/顯影時間〔秒〕。 Development speed [μm/sec] = film thickness [μm] / development time [sec].

<鹼顯影性、焊料耐熱性及鍍金耐性> <Alkali developability, solder heat resistance, and gold plating resistance>

對於具備以上述所得之積層構造體的基材,藉由ORC公司製的HMW 680GW(金屬鹵化物燈、散射光)以曝光量500mJ/cm2對負型之圖型形狀進行光照射。接著進行以90℃加熱處理60分鐘。其後,將基材浸漬在30℃‧1質量%之碳酸鈉水溶液中進行顯影3分鐘,評估可否進行鹼顯影性。評估係以目視進行,且用以下的基準來評估。 The base material having the laminated structure obtained as described above was irradiated with a negative pattern shape by an HMW 680GW (metal halide lamp, scattered light) manufactured by ORC Co., Ltd. at an exposure amount of 500 mJ/cm 2 . Heating treatment at 90 ° C for 60 minutes was then carried out. Thereafter, the substrate was immersed in an aqueous solution of sodium carbonate at 30 ° C in an amount of ‧1% by mass for 3 minutes, and the alkali developability was evaluated. The evaluation was performed visually and evaluated using the following criteria.

○:可無殘渣顯影 ○: No residue development

×:有顯影殘渣 ×: There is development residue

接著,使用熱風循環式乾燥爐進行150℃/60分鐘熱處理,得到圖型形狀之硬化塗膜。對於所得之硬化塗膜,在此評估基材上塗佈松香系助焊劑,並在預先設定260℃的焊料槽內浸漬20秒(10秒×2次),再以異丙醇洗淨助焊劑之後,用玻璃紙黏膠帶進行剝離試驗,並針對膨脹、剝離、變色等用以下基準進行評估。 Subsequently, heat treatment was performed at 150 ° C for 60 minutes using a hot air circulating drying oven to obtain a cured coating film having a pattern shape. For the obtained hardened coating film, a rosin-based flux was applied to the evaluation substrate, and immersed in a solder bath set at 260 ° C for 20 seconds (10 seconds × 2 times), and the flux was washed with isopropyl alcohol. Thereafter, the peeling test was carried out using a cellophane adhesive tape, and the following criteria were evaluated for swelling, peeling, discoloration, and the like.

○:完全未發現變化者 ○: No change found at all

×:發生膨脹、剝離者 ×: The person who has expanded or peeled off

又,對於所得之硬化塗膜使用市售品之無電解鎳鍍鍍敷浴及無電解金鍍敷浴,以80~90℃、鎳5μm、金0.05μm的條件進行鍍敷。對於鍍敷過的評估基材以目視評估有無鍍敷滲透。 Moreover, the obtained hardened coating film was plated with an electroless nickel plating bath and an electroless gold plating bath of a commercial product at 80 to 90 ° C, nickel 5 μm, and gold 0.05 μm. The plated evaluation substrate was visually evaluated for the presence or absence of plating penetration.

○:無滲透者 ○: no penetration

×:基材與塗膜之間確認到有滲透者 ×: An infiltrant was confirmed between the substrate and the coating film.

所得之結果表示於下述之表1及表2中。 The results obtained are shown in Tables 1 and 2 below.

※5:二環戊二烯型環氧樹脂(DIC(股)製)※6:雙酚A型環氧樹脂(分子量400)(三菱化學(股)製)※7:肟型光鹼產生劑(BASF JAPAN公司製)※8:2-(二甲基胺基)-2-〔(4-甲基苯基)甲基〕-1-〔4-(4-嗎啉基)苯基〕-1-丁酮(BASF JAPAN公司製)※9:雙酚F型酸改質環氧丙烯酸酯(日本化藥(股)製)※10:硫酸鋇(堺化學(股)製) *5: Dicyclopentadiene type epoxy resin (made by DIC) ※6: Bisphenol A type epoxy resin (molecular weight: 400) (Mitsubishi Chemical Co., Ltd.) ※7: 肟-type photobase generator (manufactured by BASF JAPAN Co., Ltd.) *8: 2-(Dimethylamino)-2-[(4-methylphenyl)methyl]-1-[4-(4-morpholinyl)phenyl]- 1-Butyl ketone (manufactured by BASF JAPAN Co., Ltd.) *9: bisphenol F-type acid-modified epoxy acrylate (manufactured by Nippon Kayaku Co., Ltd.) *10: Barium sulfate (manufactured by Nippon Chemical Co., Ltd.)

從上述表1及表2所示之評估結果可明白,確認了實施例之可撓性印刷配線板顯示出良好的顯影性及耐熱性。相對於此,瞭解因為比較例1僅由具有醯亞胺環之樹脂組成物的保護層所構成,故雖其耐熱性良好,但顯影性不佳,使用一般的碳酸鈉顯影是不可能的。又,在比較例2中由於接著層薄,且接著層與保護層之膜厚的比例 脫離本發明之範圍,故雖其耐熱性良好,但結果還是顯影性變差。再者,在比較例3中由於接著層與保護層之膜厚的比例依然脫離本發明之範圍,故雖其顯影性良好,但結果耐熱性變差。在比較例4中,關於膜厚的比例雖然位於本發明之範圍內,但由於接著層與保護層的顯影速度相同,兩者之顯影速度的比例超出本發明之範圍,故結果還是顯影性變差。在比較例5中由於顯影速度的比例脫離本發明之範圍,故雖其顯影性良好,但結果耐熱性變差。 As is clear from the evaluation results shown in Tables 1 and 2 above, it was confirmed that the flexible printed wiring board of the example exhibited good developability and heat resistance. On the other hand, it is understood that Comparative Example 1 is composed only of a protective layer having a resin composition of a quinone ring, and therefore has good heat resistance, but developability is not good, and development using a general sodium carbonate is impossible. Further, in Comparative Example 2, since the adhesion layer was thin, and the ratio of the thickness of the adhesion layer to the protective layer was Although it is out of the range of the present invention, although the heat resistance is good, the developability is deteriorated as a result. Further, in Comparative Example 3, since the ratio of the film thickness of the adhesive layer to the protective layer was still out of the range of the present invention, the developability was good, but the heat resistance was deteriorated. In Comparative Example 4, although the ratio of the film thickness is within the range of the present invention, since the developing speed of the adhesive layer and the protective layer is the same, the ratio of the developing speed of both is out of the range of the present invention, so that the developing property is changed. difference. In Comparative Example 5, since the ratio of the developing speed was out of the range of the present invention, the developability was good, but the heat resistance was deteriorated.

1‧‧‧可撓性印刷配線基材 1‧‧‧Flexible printed wiring substrate

2‧‧‧銅電路 2‧‧‧Bronze circuit

3‧‧‧接著層 3‧‧‧Next layer

4‧‧‧保護層 4‧‧‧Protective layer

5‧‧‧遮罩 5‧‧‧ mask

Claims (6)

一種積層構造體,其特徵為具有由鹼顯影性樹脂組成物而成之接著層(A)與在該接著層(A)上所形成之由感光性樹脂組成物而成之保護層(B),前述接著層(A)與前述保護層(B)之膜厚的比例為A/B=0.5~50,前述接著層(A)之顯影速度(a)與前述保護層(B)之顯影速度(b)的比例為a/b=1.1~100。 A laminated structure characterized by having an adhesive layer (A) composed of an alkali-developable resin composition and a photosensitive resin composition formed on the adhesive layer (A) The ratio of the film thickness of the adhesive layer (A) to the protective layer (B) is A/B = 0.5 to 50, and the development speed (a) of the adhesive layer (A) and the development speed of the protective layer (B) The ratio of (b) is a/b=1.1~100. 如請求項1之積層構造體,其中前述接著層(A)與前述保護層(B)皆可藉由光照射而圖型化。 The laminate structure of claim 1, wherein the adhesive layer (A) and the protective layer (B) are patterned by light irradiation. 如請求項1之積層構造體,其係用於可撓性印刷配線板之彎曲部及非彎曲部之中至少任一者。 The laminated structure according to claim 1 is used for at least one of a bent portion and a non-bent portion of the flexible printed wiring board. 如請求項1之積層構造體,其係用於可撓性印刷配線板之覆蓋層、阻焊劑及層間絕緣材料之中至少任一種的用途。 The laminated structure according to claim 1, which is used for at least one of a coating layer of a flexible printed wiring board, a solder resist, and an interlayer insulating material. 一種乾膜,其特徵為如請求項1~4中任一項之積層構造體之至少單面以薄膜支撐或保護而成。 A dry film characterized in that at least one side of the laminated structure according to any one of claims 1 to 4 is supported or protected by a film. 一種可撓性印刷配線板,其特徵為具備由下述而成之絕緣膜:於可撓性印刷配線基板上直接形成如請求項1~4中任一項之積層構造體之層、或以如請求項5之乾膜形成積層構造體之層後,藉由光照射進行圖型化,再以顯影液使圖型一次地形成而成之絕緣膜。 A flexible printed wiring board comprising: an insulating film formed by directly forming a layer of the laminated structure according to any one of claims 1 to 4 on a flexible printed wiring board, or After forming a layer of the laminated structure by the dry film of the claim 5, the pattern is formed by light irradiation, and the insulating film is formed by patterning the developing solution once.
TW104133692A 2014-10-14 2015-10-14 Laminated structure TWI685281B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014210308 2014-10-14
JP2014-210308 2014-10-14

Publications (2)

Publication Number Publication Date
TW201625078A true TW201625078A (en) 2016-07-01
TWI685281B TWI685281B (en) 2020-02-11

Family

ID=55746680

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104133692A TWI685281B (en) 2014-10-14 2015-10-14 Laminated structure

Country Status (5)

Country Link
JP (1) JP6374521B2 (en)
KR (1) KR101959648B1 (en)
CN (1) CN106796400B (en)
TW (1) TWI685281B (en)
WO (1) WO2016060137A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102173182B1 (en) * 2018-11-06 2020-11-02 (주)이녹스첨단소재 flexible photo imageable coverlay film and manufacturing method thereof
CN110519936A (en) * 2019-08-01 2019-11-29 中国电子科技集团公司第二十九研究所 A kind of the high-precision ultrathin welding resistance film layer and its process for making on ltcc substrate surface
CN112074099A (en) * 2020-09-04 2020-12-11 恒赫鼎富(苏州)电子有限公司 Preparation method of flexible circuit board insulating layer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263692A (en) 1986-05-12 1987-11-16 ニツポン高度紙工業株式会社 Heat-resistant printed wiring board and manufacture of the same
JPS63110224A (en) 1986-10-27 1988-05-14 Dainippon Printing Co Ltd Flexible overlay film
EP1025991B1 (en) * 1999-02-02 2003-07-23 Agfa-Gevaert A method for making positive working printing plates
JP2005092037A (en) * 2003-09-19 2005-04-07 Fuji Photo Film Co Ltd Ir photosensitive planographic printing original plate
TW200728908A (en) * 2006-01-25 2007-08-01 Kaneka Corp Photosensitive dry film resist, printed wiring board using same, and method for producing printed wiring board
KR101324645B1 (en) * 2006-05-08 2013-11-01 주식회사 동진쎄미켐 Photoresist composition
KR20070108713A (en) * 2006-05-08 2007-11-13 주식회사 동진쎄미켐 Photoresist composition
JP4752754B2 (en) * 2006-12-20 2011-08-17 Jsr株式会社 Two-layer laminated film and pattern forming method using the same
JP4899986B2 (en) * 2007-03-28 2012-03-21 Jsr株式会社 Two-layer laminated film and pattern forming method using the same
JP5427632B2 (en) * 2010-02-08 2014-02-26 太陽ホールディングス株式会社 Laminated structure and photosensitive dry film used therefor
JP5615415B2 (en) * 2012-09-28 2014-10-29 太陽インキ製造株式会社 Curable resin composition, composition for forming solder resist, dry film and printed wiring board, laminated structure and method for producing the same
JP6147995B2 (en) * 2012-11-26 2017-06-14 東京応化工業株式会社 Forming method of plating model
CN105164585B (en) * 2013-04-18 2020-02-21 太阳油墨制造株式会社 Laminated structure, flexible printed circuit board, and method for manufacturing same
JP6549848B2 (en) * 2014-01-17 2019-07-24 太陽インキ製造株式会社 Laminated structure

Also Published As

Publication number Publication date
JPWO2016060137A1 (en) 2017-06-08
KR20170069260A (en) 2017-06-20
CN106796400A (en) 2017-05-31
JP6374521B2 (en) 2018-08-15
CN106796400B (en) 2020-11-03
KR101959648B1 (en) 2019-03-18
WO2016060137A1 (en) 2016-04-21
TWI685281B (en) 2020-02-11

Similar Documents

Publication Publication Date Title
TWI614571B (en) Laminated structure, flexible printed wiring board and method of manufacturing same
CN106796402B (en) Laminated structure, dry film, and flexible printed circuit board
TWI637665B (en) Photosensitive thermosetting resin composition and flexible printed circuit board
TWI658324B (en) Photosensitive thermosetting resin composition and flexible printed circuit board
JP6549848B2 (en) Laminated structure
TW201527429A (en) Photosensitive heat-curable resin composition and flexible printed wiring board
TWI685281B (en) Laminated structure
JP6372988B2 (en) Photosensitive thermosetting resin composition and flexible printed wiring board
TW201843050A (en) Curable resin composition, laminate structure, cured product thereof, and electronic component capable of satisfying required performance of both solder resist and coverlay, and ensuring excellent heat resistance and low rebound properties
JP6050180B2 (en) Laminated structure and flexible printed wiring board
CN106796395B (en) Dry film and flexible printed circuit board
JP6050181B2 (en) Method for manufacturing flexible printed wiring board and flexible printed wiring board
TWI614572B (en) Photosensitive thermosetting resin composition for flexible printed wiring board, dry film, and flexible printed wiring board
CN116847983A (en) Laminated structure and flexible printed circuit board