TW201624770A - Light emitting diode packaging structure - Google Patents
Light emitting diode packaging structure Download PDFInfo
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Abstract
Description
本發明涉及一種發光裝置,特別涉及一種發光二極體封裝結構。The present invention relates to a light emitting device, and more particularly to a light emitting diode package structure.
LED作為一種高效光源,具有環保、省電、壽命長等諸多特點已經被廣泛應用到各種領域。As a high-efficiency light source, LED has been widely used in various fields due to its environmental protection, power saving and long life.
習知的LED封裝體將LED晶片結構固定在封裝基板上,然後在LED周緣形成反射杯並在反射杯內填充封裝材料及螢光粉來調節LED出光光效。LED晶片產生的光線經封裝材料和螢光粉後自反射杯頂部出射。然而大多數LED封裝體僅有一面出光,其餘面的光線均被封裝材料吸收及基板的阻擋而降低了LED封裝體的光取出效率。The conventional LED package fixes the LED wafer structure on the package substrate, and then forms a reflective cup at the periphery of the LED and fills the reflective cup with the encapsulating material and the phosphor powder to adjust the LED light-emitting effect. The light generated by the LED wafer is emitted from the top of the reflective cup through the encapsulating material and the phosphor powder. However, most of the LED packages emit light only on one side, and the remaining light is absorbed by the package material and blocked by the substrate, which reduces the light extraction efficiency of the LED package.
有鑑於此,有必要提供一種光取出效率高的發光二極體封裝結構。In view of the above, it is necessary to provide a light emitting diode package structure with high light extraction efficiency.
一種發光二極體封裝結構,包括基板、設置在基板一側表面的發光二極體、一第一電極和一第二電極,所述基板包括一上表面、與上表面相對的下表面,以及與上表面邊緣和下表面邊緣連接的第一側面和第二側面,所述發光二極體設置在基板的上表面,所述基板的下表面設置有微結構用於提高基板的出光量。A light emitting diode package structure includes a substrate, a light emitting diode disposed on one surface of the substrate, a first electrode and a second electrode, the substrate including an upper surface, a lower surface opposite to the upper surface, and The first side surface and the second side surface connected to the upper surface edge and the lower surface edge are disposed on the upper surface of the substrate, and the lower surface of the substrate is provided with a microstructure for increasing the amount of light emitted from the substrate.
發光二極體底部出射的光線進入基板,入射至下表面102的光線藉由形成在下表面上的微結構後出射,所述微結構對光線的多次反射、折射作用從而增加了光線自基板的下表面出光率,增加了基板下表面的出光量,同時增加了發光二極體封裝結構的出光效率。The light emitted from the bottom of the light-emitting diode enters the substrate, and the light incident on the lower surface 102 is emitted by the microstructure formed on the lower surface, and the microstructure has multiple reflections and refractions on the light, thereby increasing the light from the substrate. The light output rate of the lower surface increases the amount of light emitted from the lower surface of the substrate, and at the same time increases the light-emitting efficiency of the light-emitting diode package structure.
圖1係本發明第一實施例的發光二極體封裝結構的立體圖。1 is a perspective view of a light emitting diode package structure according to a first embodiment of the present invention.
圖2係圖1所述發光二極體封裝結構的沿II-II方向的剖視圖。2 is a cross-sectional view of the light emitting diode package structure of FIG. 1 taken along line II-II.
圖3係本發明第二實施例所述發光二極體封裝結構的剖視圖。3 is a cross-sectional view showing a light emitting diode package structure according to a second embodiment of the present invention.
圖4係本發明第三實施例所述發光二極體封裝結構的剖視圖。4 is a cross-sectional view showing a light emitting diode package structure according to a third embodiment of the present invention.
圖5係本發明第四實施例所述發光二極體封裝結構的剖視圖。FIG. 5 is a cross-sectional view showing a light emitting diode package structure according to a fourth embodiment of the present invention.
第一實施例First embodiment
如圖1所示,本發明第一實施例所示的發光二極體封裝結構100包括一基板10,設置在基板10一側表面的發光二極體(LED)20,以及一第一電極21和第二電極22。As shown in FIG. 1 , a light emitting diode package structure 100 according to a first embodiment of the present invention includes a substrate 10 , a light emitting diode ( LED ) 20 disposed on a surface of one side of the substrate 10 , and a first electrode 21 . And the second electrode 22.
所述基板10為可透光的透明長方體材料,由如玻璃,藍寶石等材料製成。在本實施例中所述基板採用如下尺寸:長:30毫米;寬:0.8毫米;高0.4毫米。The substrate 10 is a light transmissive transparent cuboid material made of a material such as glass or sapphire. In the present embodiment, the substrate is of the following dimensions: length: 30 mm; width: 0.8 mm; height 0.4 mm.
所述基板10包括一上表面101、一與上表面101相對的下表面102、與上表面101邊緣、下表面102邊緣連接的的第一側面103和第二側面104。所述第一側面103和第二側面104相對且平行。The substrate 10 includes an upper surface 101, a lower surface 102 opposite the upper surface 101, a first side 103 and a second side 104 joined to the edge of the upper surface 101 and the edge of the lower surface 102. The first side 103 and the second side 104 are opposite and parallel.
請同時參圖2,所述基板10的下表面102上形成有微結構110。所述的微結構110自下表面102垂直向外凸伸的而成。在本實施例中,所述微結構110包括自基板10的下表面102垂直向外凸伸的多個間隔的凸起112。相鄰的凸起112之間形成間隙111。在本實施例中,所述凸起112的縱截面大致呈正方形,且這些凸起112的頂面平行共面,所述凸起112均勻的分佈於所述基板10的下表面102,可以理解的,所述凸起112的橫截面為類似球狀、半球狀、梯形等其他形狀,且所述凸起隨機的分佈於基板10的下表面102。Referring to FIG. 2 simultaneously, the microstructure 110 is formed on the lower surface 102 of the substrate 10. The microstructures 110 are formed by projecting perpendicularly outward from the lower surface 102. In the present embodiment, the microstructures 110 include a plurality of spaced apart protrusions 112 that project perpendicularly outward from the lower surface 102 of the substrate 10. A gap 111 is formed between adjacent protrusions 112. In this embodiment, the longitudinal section of the protrusion 112 is substantially square, and the top surfaces of the protrusions 112 are parallel and coplanar, and the protrusions 112 are evenly distributed on the lower surface 102 of the substrate 10. The protrusions 112 have other shapes such as a spherical shape, a hemispherical shape, a trapezoidal shape, and the like, and the protrusions are randomly distributed on the lower surface 102 of the substrate 10.
在本實施例中,形成所述微結構110的方式為幹蝕刻、濕蝕刻、雷射加工、研磨、噴砂等方式。In this embodiment, the manner of forming the microstructures 110 is dry etching, wet etching, laser processing, grinding, sand blasting, and the like.
所述第一電極21和第二電極22分別固定在基板10的上表面101的兩端部且與發光二極體20間隔。The first electrode 21 and the second electrode 22 are respectively fixed to both end portions of the upper surface 101 of the substrate 10 and spaced apart from the light emitting diode 20 .
所述發光二極體20固定在基板10的上表面101上且位於第一電極21與第二電極22之間。當所述發光二極體20為單個時,所述多個發光二極體20的N電極和P電極直接與基板10的第一電極21和第二電極22電連接。當所述發光二極體20的數量為多個時候,所述發光二極體20之間藉由串列連接後其引出的兩端分別與第一電極21和第二電極22電連接。The light emitting diode 20 is fixed on the upper surface 101 of the substrate 10 and located between the first electrode 21 and the second electrode 22. When the light emitting diodes 20 are single, the N electrodes and the P electrodes of the plurality of light emitting diodes 20 are directly electrically connected to the first electrode 21 and the second electrode 22 of the substrate 10. When the number of the light emitting diodes 20 is plural, the two ends of the light emitting diodes 20 are electrically connected to the first electrode 21 and the second electrode 22 by being connected in series.
在本實施例中,所述發光二極體20發出的光線部分直接自基板10的上表面101之上射出,另外一部分光線穿過基板10的下表面102的光線經微結構110進行多次反射、折射後出射。所述微結構110對光線進行多次反射、折射作用而增加光線自基板10的下表面102出光量。減少了基板10對光線的阻擋、吸收以及下表面102對光線的全反射,從而增加了發光二極體封裝結構100的出光效率。In this embodiment, the light emitted by the LED 20 is directly emitted from the upper surface 101 of the substrate 10, and another portion of the light passing through the lower surface 102 of the substrate 10 is reflected by the microstructure 110 multiple times. After refraction, it is emitted. The microstructures 110 reflect and refract light multiple times to increase the amount of light emitted from the lower surface 102 of the substrate 10. The light blocking and absorption of the substrate 10 and the total reflection of the light by the lower surface 102 are reduced, thereby increasing the light extraction efficiency of the LED package structure 100.
第二實施例Second embodiment
如圖3所示,本發明第二實施例所述發光二極體封裝結構100a與第一實施例所述發光二極體封裝結構100相似,其不同點在於:所述基板10的第一側面103和第二側面104上均形成有微結構110。As shown in FIG. 3, the LED package structure 100a of the second embodiment of the present invention is similar to the LED package structure 100 of the first embodiment, and the difference is that the first side of the substrate 10 is A microstructure 110 is formed on both the 103 and the second side 104.
在本實施例中,自所述發光二極體20底部出射的光線進入基板10後,所述下表面102、第一側面103和第二側面104上微結構110的反射和折射作用後增加了自第一側面103、第二側面104的出光量,使得基板10多面出光,提高了發光二極體封裝結構100a的出光量和實用性。In this embodiment, after the light emitted from the bottom of the light-emitting diode 20 enters the substrate 10, the reflection and refraction of the microstructures 110 on the lower surface 102, the first side 103, and the second side 104 are increased. The amount of light emitted from the first side surface 103 and the second side surface 104 causes the substrate 10 to emit light on multiple sides, thereby improving the light output amount and practicality of the light emitting diode package structure 100a.
第三實施例Third embodiment
如圖4所示,本發明第三實施例所述發光二極體封裝結構100b與第二實施例所述發光二極體封裝結構100a相似,其不同點在於:所述微結構110a包括自基板10的下表面102朝向上表面101內凹形成的多個間隔設置的凹槽113,相鄰的凹槽113之間形成阻擋部114。所述凹陷113的橫截面大致呈U形。As shown in FIG. 4, the LED package structure 100b according to the third embodiment of the present invention is similar to the LED package structure 100a of the second embodiment, except that the microstructure 110a includes a self-substrate. The lower surface 102 of the 10 is formed with a plurality of spaced-apart grooves 113 recessed toward the upper surface 101, and a barrier portion 114 is formed between the adjacent grooves 113. The recess 113 has a substantially U-shaped cross section.
第四實施例Fourth embodiment
如圖5所示,本發明第四實施例所述發光二極體封裝結構100c與第二實施例所述發光二極體封裝結構100a或第三實施例所述發光二極體封裝結構100b相似,其不同之處在於:所述發光二極體封裝結構100c還包括一螢光粉層30,所述螢光粉層30形成在基板10的上表面101上覆蓋所述發光二極體20,以及形成於基板10的下表面102、第一側面103和第二側面104上包覆所述微結構110(110a)。在本實施例中,所述螢光粉層30包括黃色螢光粉,所述發光二極體20包括藍光晶片。As shown in FIG. 5, the LED package structure 100c according to the fourth embodiment of the present invention is similar to the LED package structure 100a of the second embodiment or the LED package structure 100b of the third embodiment. The difference is that the LED package 100c further includes a phosphor layer 30, and the phosphor layer 30 is formed on the upper surface 101 of the substrate 10 to cover the LEDs 20, And forming the microstructures 110 (110a) on the lower surface 102, the first side 103, and the second side 104 of the substrate 10. In the embodiment, the phosphor powder layer 30 includes yellow phosphor powder, and the light emitting diode 20 includes a blue light wafer.
可以理解的,在其他實施例中,所述螢光粉層30可以根據需要僅僅設置在基板10的上表面101上而包裹所述發光二極體20,也可以僅僅設置在基板10的下表面102或者第一側面和第二側面104而包裹所述微結構110(110a)。It can be understood that, in other embodiments, the phosphor layer 30 may be disposed on the upper surface 101 of the substrate 10 to wrap the LEDs 20 as needed, or may be disposed only on the lower surface of the substrate 10. The microstructures 110 (110a) are wrapped by 102 or a first side and a second side 104.
本實施例中,所述發光二極體20產生的藍光出射後激發所述螢光粉層30而產生黃光,所述激發產生的黃光與未激發的藍光混合而產生白光出射。所述螢光粉層30進一步調節發光二極體封裝結構100的出光顏色,藉由改變所述螢光層30的形狀可進一步改善發光二極體20的出光均勻度和色溫。In this embodiment, the blue light generated by the light-emitting diode 20 emits the phosphor powder layer 30 to generate yellow light, and the yellow light generated by the excitation is mixed with the unexcited blue light to generate white light. The phosphor layer 30 further adjusts the color of the light emitted by the LED package structure 100. By changing the shape of the phosphor layer 30, the uniformity and color temperature of the light emitting diode 20 can be further improved.
100、100a、100b、100c‧‧‧發光二極體封裝結構100, 100a, 100b, 100c‧‧‧Light emitting diode package structure
10‧‧‧基板10‧‧‧Substrate
101‧‧‧上表面101‧‧‧ upper surface
102‧‧‧下表面102‧‧‧lower surface
103‧‧‧第一側面103‧‧‧ first side
104‧‧‧第二側面104‧‧‧ second side
20‧‧‧發光二極體20‧‧‧Lighting diode
21‧‧‧第一電極21‧‧‧First electrode
22‧‧‧第二電極22‧‧‧second electrode
30‧‧‧螢光粉層30‧‧‧Fluorescent powder layer
110、110a‧‧‧微結構110, 110a‧‧‧Microstructure
112‧‧‧凸起112‧‧‧ bumps
111‧‧‧間隙111‧‧‧ gap
113‧‧‧凹槽113‧‧‧ Groove
114‧‧‧阻擋部114‧‧‧Block
無no
100‧‧‧發光二極體封裝結構 100‧‧‧Light emitting diode package structure
10‧‧‧基板 10‧‧‧Substrate
101‧‧‧上表面 101‧‧‧ upper surface
102‧‧‧下表面 102‧‧‧lower surface
103‧‧‧第一側面 103‧‧‧ first side
104‧‧‧第二側面 104‧‧‧ second side
20‧‧‧發光二極體 20‧‧‧Lighting diode
22‧‧‧第二電極 22‧‧‧second electrode
110‧‧‧微結構 110‧‧‧Microstructure
112‧‧‧凸起 112‧‧‧ bumps
111‧‧‧間隙 111‧‧‧ gap
Claims (10)
The light emitting diode package structure according to claim 9, wherein the phosphor powder layer covers the light emitting diode.
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CN201410825198.7A CN105810802A (en) | 2014-12-27 | 2014-12-27 | Light emitting diode package structure |
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JP2006294907A (en) * | 2005-04-12 | 2006-10-26 | Showa Denko Kk | Nitride gallium based compound semiconductor luminous element |
TW200951359A (en) * | 2008-06-06 | 2009-12-16 | Taiwan Solutions Systems Corp | LED lamp module and its fabricating method |
CN102347416A (en) * | 2010-08-02 | 2012-02-08 | 亚威朗光电(中国)有限公司 | Light emitting diode |
WO2013001781A1 (en) * | 2011-06-27 | 2013-01-03 | パナソニック株式会社 | Nitride-based semiconductor light-emitting element |
CN103456758A (en) * | 2012-05-30 | 2013-12-18 | 展晶科技(深圳)有限公司 | Light-emitting diode module and manufacturing method thereof |
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TWI504019B (en) * | 2013-06-11 | 2015-10-11 | Easy Epi Photoelectronics Inc | Method of fabricating light emitting diode chip |
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