TWM478913U - Semiconductor structure - Google Patents

Abstract

A semiconductor structure includes a substrate and a semiconductor layer. The semiconductor layer is disposed on the substrate and has a base portion and a protrusion located on the base portion. The protrusion has an upper surface when viewed from the top, the upper surface has a plurality of side edges, and a beveled edge is disposed between at least two neighbored side edges.

Description

Semiconductor structure

The novel creation is related to a semiconductor structure, and in particular to a semiconductor structure that can increase structural reliability.

FIG. 1 is a schematic perspective view of a conventional light emitting diode semiconductor structure. Referring to FIG. 1 , in general, the LED semiconductor structure 10 a includes a substrate 11 and an epitaxial structure 12 disposed on the substrate 11 , wherein the epitaxial structure 12 includes a main light-emitting protrusion 22 and a base portion 24 . . The light-emitting diode semiconductor structure 10a transmits electric energy through an electrode (not shown) disposed on the epitaxial structure 12, and can emit light by using a photoelectric effect.

In the fabrication of the light-emitting diode semiconductor structure 10a, etching is a commonly used technique. However, since the adjacent sides of the protruding portions 22 which are mainly light-emitting in the general-purpose LED semiconductor structure 10a are designed at right angles, the boundary 13 of the right-side orthogonal angles is too sharp and easy to be etched. This causes the junction 13 to collapse. As a result, the reliability of the light-emitting structure of the light-emitting diode semiconductor structure 10a is reduced, thereby affecting the luminous efficiency.

The novel creation provides a semiconductor structure with better structural reliability.

The novel semiconductor structure is composed of a substrate and a semiconductor layer. The semiconductor layer is disposed on the substrate and has a base and a protrusion on the base. The projection has an upper surface when viewed from above, and the upper surface has a plurality of sides, wherein at least two adjacent sides have a beveled edge therebetween.

In an embodiment of the present invention, the two adjacent sides have a flat cut angle therebetween.

In an embodiment of the present invention, the protrusion has a plurality of side surfaces, and at least two adjacent side surfaces have a chamfered surface therebetween.

In an embodiment of the present invention, the semiconductor layer includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer, and the first type semiconductor layer is located between the substrate and the light emitting layer. A portion of the first type semiconductor layer defines a base, and another portion of the first type semiconductor layer, the light emitting layer, and the second type semiconductor layer define a protrusion.

In an embodiment of the present invention, the sidewall of the semiconductor layer, the sidewall of the substrate or the sidewall of the semiconductor layer and the sidewall of the substrate are a rough surface.

The novel semiconductor structure is composed of a substrate and a semiconductor layer. The semiconductor layer is disposed on the substrate and has a base and a base on the base Highlights. The projection has an upper surface when viewed from above, and the upper surface has a plurality of sides with a chamfer angle between at least two adjacent sides. The line connecting the two ends of the lead angle defines a closed area, and the line connecting the end points of the lead angle defines a triangle with the extending direction of the corresponding side. The area of the enclosed area is less than 0.8 times the area of the triangle.

In an embodiment of the novel creation, the lead angle is a round angle.

In an embodiment of the present invention, the upper surface of the upper surface has rounded corners therebetween.

In an embodiment of the present invention, the radius of curvature of the rounded corners is between 10 microns and 30 microns.

In an embodiment of the novel creation, the rounded corners include a protruding round angle or a recessive round angle.

In an embodiment of the present invention, the protrusion has a plurality of side surfaces, and at least two adjacent side surfaces have a circular cut surface therebetween.

In an embodiment of the novel creation, the arc of the lead angle includes a circular arc, an elliptical arc, a parabola or a hyperbola.

In an embodiment of the present invention, the semiconductor layer includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer, and the first type semiconductor layer is located between the substrate and the light emitting layer. A portion of the first type semiconductor layer defines a base, and another portion of the first type semiconductor layer, the light emitting layer, and the second type semiconductor layer define a protrusion unit.

In an embodiment of the present invention, the sidewall of the semiconductor layer, the sidewall of the substrate or the sidewall of the semiconductor layer and the sidewall of the substrate are a rough surface.

Based on the above, since the semiconductor layer created by the present invention has a flat cut angle or a guide angle design, it is possible to avoid the problem that the structure is cracked due to the right angle design of the adjacent side edges of the conventional protruding portion. In short, the novel semiconductor structure created by the present invention can have better structural reliability.

The above described features and advantages of the present invention will become more apparent and understood from the following description.

10a‧‧‧Light emitting diode semiconductor structure

11‧‧‧Substrate

12‧‧‧ Epitaxial structure

13‧‧‧ Junction

22‧‧‧Protruding

24‧‧‧ base

100a, 100b, 100c‧‧‧ semiconductor structure

110‧‧‧Substrate

110a‧‧‧ Sidewall

120a, 120b, 120c‧‧‧ semiconductor layer

122, 122c‧‧‧ base

124a, 124b, 124c‧‧‧ protruding parts

125a, 125b‧‧‧ side

125s1, 125s2‧‧‧ side surface

126a‧‧‧ lead angle

126a1, 126a2‧‧‧ endpoint

126b‧‧‧round cut

127a‧‧‧cut angle

127b‧‧‧ chamfered surface

128a, 128b‧‧‧ upper surface

129c, 129c1, 129c2‧‧‧ side wall

L1, L2‧‧‧ extension direction

L3‧‧‧ connection

S1‧‧‧ first type semiconductor layer

Part of the S11‧‧‧ first-type semiconductor

S12‧‧‧Another part of the first type of semiconductor

S2‧‧‧Second type semiconductor layer

E‧‧‧Lighting layer

A1‧‧‧closed area

A2‧‧‧ triangle

FIG. 1 is a schematic perspective view of a conventional light emitting diode semiconductor structure.

2A is a perspective view of a semiconductor structure according to an embodiment of the present invention.

2B is a top plan view of the semiconductor structure of FIG. 2A.

3A is a perspective view of a semiconductor structure according to another embodiment of the present invention.

3B is a top plan view of the semiconductor structure of FIG. 3A.

4 is a cross-sectional view showing a semiconductor structure of another embodiment of the present invention.

2A is a perspective view of a semiconductor structure according to an embodiment of the present invention. 2B is a top plan view of the semiconductor structure of FIG. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, in the embodiment, the semiconductor structure 100a includes a substrate 110 and a semiconductor layer 120a. The semiconductor layer 120a is disposed on the substrate 110 and has a base portion 122 and a protruding portion 124a on the base portion 122. The projection 124a has an upper surface 128a in plan view and the upper surface 128a has a plurality of sides 125a with a flattening angle 127a between at least two adjacent sides 125a.

More specifically, in the embodiment, the substrate 110 is, for example, a sapphire substrate, but is not limited thereto. The semiconductor layer 120a includes a first type semiconductor layer S1, a light emitting layer E, and a second type semiconductor layer S2. The first type semiconductor layer S1 is, for example, an N type semiconductor layer, and the second type semiconductor layer S2 is, for example, a P type semiconductor layer, which is not limited thereto. The light emitting layer E is located between the first type semiconductor layer S1 and the second type semiconductor layer S2, and the first type semiconductor layer S1 is disposed between the substrate 110 and the light emitting layer E. As shown in FIG. 1A, a portion S11 of the first type semiconductor layer S1 defines a base portion 122, and another portion S12 of the first type semiconductor layer S1, the light emitting layer E, and the second type semiconductor layer S2 define a protruding portion 124a. In particular, the orthographic projection area of the protrusion 124a on the substrate 110 is smaller than the orthographic area of the base 122 on the substrate 110.

The adjacent side edges 125a of the protruding portion 124a of the semiconductor layer 120a of the present embodiment have at least a flat cut angle 127a. In more detail, the protrusion 124a has a plurality of side surfaces 125s1 and between at least two adjacent side surfaces 125s1 There is a chamfered surface 127b. That is, the corner of the upper surface 128a of the projection 124a has a flat cut angle design such that the side surface 125s1 of the projection 124a has a chamfered surface 127b. Therefore, compared with the design that the adjacent side of the conventional protruding portion 22 is a right angle and the interface 13 is too sharp, the semiconductor layer 120a of the embodiment can utilize the design of the flattening angle 127a to make the intersection boundary more oblique. Since the cut surface 127b serves as a buffer, after the etching process, the collapse phenomenon does not occur due to excessive sharpness, thereby increasing the structural strength of the semiconductor layer 120a. As such, the semiconductor structure 100a of the present embodiment can have better structural reliability.

It should be noted that although in the embodiment, the design of the flat cutting angle 127a is provided between the adjacent side edges 125a, in other embodiments not shown, it may be only between the partial side edges 125a. Setting the flat cut angle 127a is still a technical solution that can be used in the creation of the novel, without departing from the scope of the novel creation.

3A is a perspective view of a semiconductor structure according to another embodiment of the present invention. 3B is a top plan view of the semiconductor structure of FIG. 3A. The same reference numerals are used to denote the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the detailed description is not repeated herein.

Referring to FIG. 3A and FIG. 3B, the main difference between the semiconductor structure 100b of the present embodiment and the semiconductor structure 100a of the foregoing embodiment is that the protruding portion 124b of the semiconductor layer 120b of the present embodiment has an upper surface 128b in plan view, and Upper surface 128b has a plurality of sides 125b with at least two adjacent sides 125b therebetween A lead angle 126a. In particular, the line L3 and the lead angle 126a of the two end points 126a1, 126a2 of the lead angle 126a define a closed area A1, and the line L3 of the end points 126a1, 126a2 of the lead angle 126a and the extension of the corresponding side edge 125b The directions L1, L2 define a triangle A2, and the area of the closed area A1 is smaller than 0.8 times the area of the triangle A2. In this embodiment, the lead angle 126a is embodied as a rounded corner and has a radius of curvature between 10 micrometers and 30 micrometers. Preferably, the radius of curvature is between 15 micrometers and 25 micrometers, and the light has a high light emission. effectiveness. Here, the protruding portion 124b of the present embodiment has a plurality of side surfaces 125s2, and at least two adjacent side surfaces 125s2 have a circular cut surface 126b formed by a rounded design.

As shown in FIG. 3A and FIG. 3B, the lead angle 126a of the present embodiment is embodied as a design of a convex round angle, and the arc of the lead angle 126a is a circular arc. However, in other embodiments not shown, the lead angle 126a may also be a recessed round angle or an elliptical angle design, and the arc of the lead angle 126a may also be an elliptical arc, a parabola or a hyperbola. . The design of the above-mentioned lead angle 126a still belongs to the technical solution that can be used in the creation of the novel, without departing from the scope of protection of the novel creation.

The adjacent side edges 125b of the protruding portion 124b of the semiconductor layer 120b of the present embodiment have a design of the lead angle 126a. Therefore, the adjacent sides of the conventional protruding portion 22 are at right angles to make the boundary 13 too sharp. The semiconductor layer 120b of the present embodiment can utilize the design of the lead angle 126a to make the intersection boundary more than a buffer cut surface, for example, the circular cut surface 126b. Therefore, after the etching process, there is no collapse phenomenon due to the side edge being too sharp. Thereby, the structural strength of the semiconductor layer 120b is increased. In this way, this reality The semiconductor structure 100b of the embodiment can have better structural reliability. Preferably, the area of the closed area A1 is less than 0.8 times the area of the triangle A2, and the optimal buffering effect is achieved without affecting the light extraction efficiency. More than 0.8 times will make the adjacent side junctions too close to the right angle design, so that the collapse phenomenon is easy to occur during etching.

4 is a cross-sectional view showing a semiconductor structure of another embodiment of the present invention. The same reference numerals are used to denote the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the detailed description is not repeated herein.

Referring to FIG. 4, the main difference between the semiconductor structure 100c of the present embodiment and the semiconductor structure 100a of the foregoing embodiment is that the sidewall 129c of the semiconductor layer 120c of the present embodiment is a rough surface. More specifically, by the etching technique, the sidewall 129c1 of the base portion 122c of the semiconductor layer 120c and the sidewall 129c2 of the protruding portion 124c are both rough surfaces, and the light extraction efficiency of the semiconductor layer 120c can be effectively improved. Optionally, the sidewall 110a of the substrate 110 may also be a rough surface to make the light-emitting efficiency of the semiconductor structure 100a better. Of course, in other embodiments not shown, only the sidewall of the substrate is a rough surface, and the sidewall of the semiconductor layer is not a rough surface, which is still a technical solution that can be used in the novel creation, without departing from the novel creation. The scope of protection.

In addition, in other embodiments not shown, the semiconductor layer 120b having the design of the lead angle 126a as mentioned in the foregoing embodiment may be selected, and those skilled in the art may refer to the description of the foregoing embodiment, according to the actual situation. Demand, and the above structure Pieces to achieve the desired technical effect.

In summary, the novel semiconductor layer has a flat cut angle or a lead angle design to avoid the conventional right angle design being too sharp and affecting the structure, thereby improving the structural strength of the semiconductor layer. In short, the novel semiconductor structure created by the present invention can have better structural reliability.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

100a‧‧‧Semiconductor structure

110‧‧‧Substrate

120a‧‧‧Semiconductor layer

122‧‧‧ base

124a‧‧‧Protruding

125a‧‧‧ side

127a‧‧‧cut angle

128a‧‧‧ upper surface

Claims (14)

A semiconductor structure comprising: a substrate; and a semiconductor layer disposed on the substrate and having a base and a protrusion on the base, the protrusion having an upper surface in a plan view, the upper surface having a plurality of The side edges, wherein at least two of the adjacent sides have a flat cut angle. The semiconductor structure of claim 1, wherein the two adjacent sides have a flat cut angle therebetween. The semiconductor structure of claim 1, wherein the protrusion has a plurality of side surfaces, and at least two adjacent side surfaces have a chamfered surface. The semiconductor structure of claim 1, wherein the semiconductor layer comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, wherein the light emitting layer is located in the first type semiconductor layer and the second Between the semiconductor layers, the first semiconductor layer is located between the substrate and the light emitting layer, and a portion of the first semiconductor layer defines the base, and another portion of the first semiconductor layer, the light The layer and the second type semiconductor layer define the protrusion. The semiconductor structure of claim 1, wherein the sidewall of the semiconductor layer, the sidewall of the substrate or the sidewall of the semiconductor layer and the sidewall of the substrate are a rough surface. A semiconductor structure comprising: a substrate; and a semiconductor layer disposed on the substrate and having a base and located at the base a protrusion on the portion, the protrusion having an upper surface in a plan view, and the upper surface has a plurality of sides, wherein at least two of the adjacent sides have a lead angle therebetween, and the lead angle A line connecting the two end points and the lead angle defines a closed area, and a line connecting the end points of the lead angle and a corresponding extending direction of the side edges defines a triangle, and an area of the closed area is smaller than the 0.8 times the area of the triangle. The semiconductor structure of claim 6, wherein the lead angle is a rounded corner. The semiconductor structure of claim 7, wherein the upper surface has the rounded corner between the two adjacent sides. The semiconductor structure of claim 7, wherein the radius of curvature of the fillet is between 10 microns and 30 microns. The semiconductor structure of claim 7, wherein the fillet comprises a convex fillet or a concave fillet. The semiconductor structure of claim 7, wherein the protrusion has a plurality of side surfaces, and at least two adjacent side surfaces have a circular cut surface therebetween. The semiconductor structure of claim 6, wherein the arc of the lead angle comprises a circular arc, an elliptical arc, a parabola or a hyperbola. The semiconductor structure of claim 6, wherein the semiconductor layer comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, wherein the light emitting layer is located in the first type semiconductor layer and the second Between the semiconductor layers, the first semiconductor layer is located between the substrate and the light emitting layer, and a portion of the first semiconductor layer defines the base, and another portion of the first semiconductor layer The light emitting layer and the second type semiconductor layer define the protrusion. The semiconductor structure of claim 6, wherein the sidewall of the semiconductor layer, the sidewall of the substrate or the sidewall of the semiconductor layer and the sidewall of the substrate are a rough surface.