CN102347416A - Light emitting diode - Google Patents
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- CN102347416A CN102347416A CN2010102422989A CN201010242298A CN102347416A CN 102347416 A CN102347416 A CN 102347416A CN 2010102422989 A CN2010102422989 A CN 2010102422989A CN 201010242298 A CN201010242298 A CN 201010242298A CN 102347416 A CN102347416 A CN 102347416A
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Abstract
The invention discloses a high luminescence efficiency light emitting diode (LED) which comprises a transparent growth substrate, a semiconductor epitaxial layer, a transparent light-emitting layer and an electrode, wherein the semiconductor epitaxial layer comprises an N-type restriction layer, an active layer, a P-type restriction layer, the N-type restriction layer is formed at a main surface of the growth substrate, the active layer is formed on the N-type restriction layer, and the P-type restriction layer is formed on the active layer. The light emitting diode is characterized in that: (1) the transparent light-emitting layer is formed at side surfaces of the transparent growth substrate and the semiconductor epitaxial layer; (2) a side surface of the light-emitting layer is formed with a microstructure, light-emitting efficiency is raised, and a top view shape of the microstructure is a triangle, rectangular, arc-shaped, or irregular shape; (3) a refractive index of the light-emitting layer is between refractive indexes of air and the transparent growth substrate and the semiconductor epitaxial layer.
Description
Technical field
The present invention discloses the higher transversary light-emitting diode of luminous efficiency (LED light-emitting diode), belongs to the photoelectron technology field.
Background technology
Semiconductor lighting gets into general illumination just fast, and one of present main target is to improve luminous efficiency.One of weak point of traditional transversary light-emitting diode (LED light-emitting diode) is that a part of light is reflected back to chip internal at the side of transparent growth substrates and semiconductor epitaxial layers, be absorbed through repeatedly reflecting, so luminous efficiency is lower.Need the higher light-emitting diode of luminous efficiency (LED light-emitting diode).
The open higher LED light-emitting diode of luminous efficiency of the present invention.
Summary of the invention
The higher light-emitting diode of luminous efficiency disclosed by the invention comprises: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, Semiconductor epitaxial layers comprises; N-class limitations layer, active layer (active layer), P-class limitations layer: N-class limitations layer is formed on the first type surface of growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.It is characterized in that: (1) goes out the side that photosphere is formed on growth substrates and semiconductor epitaxial layers; Perhaps; Go out the side that photosphere is formed on first type surface and the growth substrates and the semiconductor epitaxial layers of semiconductor epitaxial layers, the part that goes out photosphere that is formed on the first type surface of semiconductor epitaxial layers is called the first type surface of photosphere; (2) side surface that goes out photosphere forms micro-structural, improves light extraction efficiency, and the top view shape that goes out the micro-structural of photosphere side surface is triangle or rectangle or circular arc or irregularly shaped; (3) first type surface that goes out photosphere forms micro-structural, improves light extraction efficiency, and the micro-structural that goes out the photosphere first type surface is that taper shape or pyramid are cylindrical or irregularly shaped; (4) refractive index that goes out photosphere is between air and transparent growth substrates and semiconductor epitaxial layers.
One embodiment comprises of the light-emitting diode that luminous efficiency disclosed by the invention is higher: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, semiconductor epitaxial layers comprises that N-class limitations layer, active layer, P-class limitations layer: N-class limitations layer is formed on the first type surface of growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.It is characterized in that: (1) goes out the side that photosphere is formed on growth substrates and semiconductor epitaxial layers; Perhaps; Go out the side that photosphere is formed on first type surface and the growth substrates and the semiconductor epitaxial layers of semiconductor epitaxial layers, the part that goes out photosphere that is formed on the first type surface of semiconductor epitaxial layers is called the first type surface of photosphere; (2) surface of the side of transparent growth substrates forms micro-structural, and the top view figure of the micro-structural of the side of transparent growth substrates is triangle or rectangle or circular arc or irregularly shaped; (3) side surface that goes out photosphere forms micro-structural, and the top view figure that goes out the micro-structural of photosphere side surface is triangle or rectangle or circular arc or irregularly shaped; (4) first type surface that goes out photosphere forms micro-structural, and the micro-structural that goes out the photosphere first type surface is that taper shape or pyramid are cylindrical or irregularly shaped; (4) refractive index that goes out photosphere is between air and transparent growth substrates and semiconductor epitaxial layers.
One embodiment comprises of the light-emitting diode that luminous efficiency disclosed by the invention is higher: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, semiconductor epitaxial layers comprises that N-class limitations layer, active layer, P-class limitations layer: N-class limitations layer is formed on the first type surface of growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.It is characterized in that: (1) goes out photosphere and is formed on the transparent growth substrates and the side of semiconductor epitaxial layers; Perhaps; Go out the side that photosphere is formed on first type surface and the growth substrates and the semiconductor epitaxial layers of semiconductor epitaxial layers, the part that goes out photosphere that is formed on the first type surface of semiconductor epitaxial layers is called the first type surface of photosphere; (2) surface of the side of semiconductor epitaxial layers forms micro-structural, and the top view figure of the micro-structural of the side of semiconductor epitaxial layers is triangle or rectangle or circular arc or irregularly shaped; (3) side surface that goes out photosphere forms micro-structural, and the top view figure that goes out the micro-structural of photosphere side surface is triangle or rectangle or circular arc or irregularly shaped; (4) first type surface that goes out photosphere forms micro-structural, and the micro-structural that goes out the photosphere first type surface is that taper shape or pyramid are cylindrical or irregularly shaped; (5) refractive index that goes out photosphere is between air and transparent growth substrates and epitaxial loayer.
The object of the invention is following with each item effect that can reach:
(1) the higher transversary light-emitting diode of luminous efficiency provided by the invention, the luminous flux (lumen (lm)/chip) that makes each chip send increases.
(2) the higher transversary light-emitting diode of luminous efficiency provided by the invention has reduced lumen (lm) cost (unit/lm), make LED can get into general lighting soon.
(3) the higher transversary light-emitting diode of luminous efficiency provided by the invention under the condition of identical chip production capacity, has improved lumen (lm) production capacity, wherein, and lumen (lm) production capacity=chip production capacity x lumen (lm)/chip.Saved huge equipment investment.
(4) the higher transversary light-emitting diode of luminous efficiency provided by the invention under the condition of identical lumen (lm) production capacity, has been saved the raw material of epitaxial growth and chip technology.
(5) the higher transversary light-emitting diode of luminous efficiency provided by the invention, manufacturing process are suitable for producing in batches.
The present invention and its characteristic and benefit will better be showed in the detailed description below.
Description of drawings
Fig. 1 a shows the top view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 1 b shows the sectional view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 2 a shows the top view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 2 b shows the sectional view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 3 a shows the top view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 3 b shows the sectional view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 4 a shows the top view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 4 b shows the sectional view of an embodiment of transversary light-emitting diode of the present invention.
Fig. 5 shows the top view of an embodiment of micro-structural of the side surface that photosphere of transversary light-emitting diode of the present invention.
Fig. 6 shows the top view of an embodiment of micro-structural of the side surface that photosphere of transversary light-emitting diode of the present invention.
Fig. 7 shows the top view of an embodiment of micro-structural of the side surface that photosphere of transversary light-emitting diode of the present invention.
Specific embodiment
Though specific embodiment of the present invention will be described below, following description just illustrates principle of the present invention, rather than limits the invention to the description of following specific embodiment.
Attention: following all embodiment that are applicable to transversary light-emitting diode of the present invention (LED light-emitting diode):
(1) ratio of each several part is not represented the ratio of actual products among the figure.
(2) material of epitaxial loayer is from one group of material, to select, and this group material comprises, gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base material promptly, glow/Huang, green glow, blue light, the semiconductor epitaxial layers that waits.Wherein, gallium nitride-based material comprises: the binary system of gallium, aluminium, indium, nitrogen, ternary system, quaternary material.The binary system of gallium, aluminium, indium, nitrogen, ternary system, quaternary material comprise, GaN, GaInN, AlGaInN, etc.The gallium phosphide sill comprises: the binary system of gallium, aluminium, indium, phosphorus, ternary system, quaternary material.The binary system of gallium, aluminium, indium, phosphorus, ternary system, quaternary material comprise, GaP, GaInP, AlGaInP, InP, etc.Gallium nitrogen phosphorus sill comprises: the ternary system of gallium, aluminium, indium, nitrogen, phosphorus, quaternary system and five yuan of based materials.The binary system of gallium, aluminium, indium, nitrogen, phosphorus, ternary system, quaternary system and five yuan of based materials comprise, GaNP, AlGaNP, GaInNP, AlGaInNP, etc.The Zinc oxide-base material comprises, ZnO, etc.The crystrallographic plane of gallium nitride-based epitaxial layer is from one group of crystrallographic plane, to select, and this group crystrallographic plane comprises: c-plane, a-plane, m-plane.
(3) material that goes out photosphere is transparent insulating material.Transparent insulating material comprises, silica (SiO2) or silicon nitride (SiN) or silicon-on-glass (SOG), etc.
(4) embodiment: transversary LED light-emitting diode comprises: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, semiconductor epitaxial layers comprises that N-class limitations layer, active layer, P-class limitations layer: N-class limitations layer is formed on the growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.Go out photosphere and be formed on the transparent growth substrates and the side of epitaxial loayer, the side surface that goes out photosphere has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.The surface of the side of transparent growth substrates has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.
(5) embodiment: transversary LED light-emitting diode comprises: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, semiconductor epitaxial layers comprises that N-class limitations layer, active layer, P-class limitations layer: N-class limitations layer is formed on the growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.Go out photosphere and be formed on the transparent growth substrates and the side of epitaxial loayer, the side surface that goes out photosphere has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.The surface of the side of semiconductor epitaxial layers has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.
(6) embodiment: transversary LED light-emitting diode comprises: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, semiconductor epitaxial layers comprises that N-class limitations layer, active layer, P-class limitations layer: N-class limitations layer is formed on the growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.Go out photosphere and be formed on the transparent growth substrates and the side of semiconductor epitaxial layers, the side surface that goes out photosphere has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.
(7) embodiment: transversary LED light-emitting diode comprises: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, semiconductor epitaxial layers comprises that N-class limitations layer, active layer, P-class limitations layer: N-class limitations layer is formed on the growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.Go out photosphere and be formed on the transparent growth substrates and the side of semiconductor epitaxial layers, the side surface that goes out photosphere has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.The surface of the transparent growth substrates and the side of semiconductor epitaxial layers all has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.
(8) embodiment: transversary LED light-emitting diode comprises: transparent growth substrates, semiconductor epitaxial layers, go out photosphere, electrode.Wherein, semiconductor epitaxial layers comprises that N-class limitations layer, active layer, P-class limitations layer: N-class limitations layer is formed on the first type surface of growth substrates, and active layer is formed on the N-class limitations layer, and P-class limitations layer is formed on the active layer; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.Go out the side that photosphere is formed on first type surface and the growth substrates and the semiconductor epitaxial layers of semiconductor epitaxial layers, the part that goes out photosphere that is formed on the first type surface of semiconductor epitaxial layers is called the first type surface of photosphere.The side surface that goes out photosphere has micro-structural, and the top view of micro-structural is shaped as, triangle, or rectangle, or circular arc, or irregularly shaped.The first type surface that goes out photosphere forms micro-structural, and the micro-structural that goes out on the photosphere first type surface is that taper shape or pyramid are cylindrical or irregularly shaped.
(9) electrode of transversary LED light-emitting diode of the present invention can be other setting; Electrode is respectively formed on N-class limitations layer and the P-class limitations layer.
(10) surface of the epitaxial loayer of transversary LED light-emitting diode of the present invention forms transparency electrode.The material of transparency electrode comprises ITO, ZnO, etc.The first type surface of transparency electrode forms micro-structural.
(11) surface of the transparency electrode of transversary LED light-emitting diode of the present invention forms passivation layer.The material of passivation layer comprises SiO2, SiN, SOG, etc.The first type surface of passivation layer forms micro-structural.
Fig. 1 a and Fig. 1 b show top view and the A-A sectional view of an embodiment of transversary LED light-emitting diode of the present invention respectively.Transversary LED light-emitting diode 100 comprises transparent growth substrates 101, semiconductor epitaxial layers 102, transparent goes out photosphere 103, electrode 110.Wherein, semiconductor epitaxial layers 102 is formed on the first type surface of transparent growth substrates 101.Two electrodes 110 are respectively formed on the N-and P-class limitations layer of semiconductor epitaxial layers 102.Form the transparent photosphere 103 that goes out on the side of transparent growth substrates 101 and semiconductor epitaxial layers 102, form micro-structural 104 on the transparent side surface that goes out photosphere 103.The top view of the micro-structural 104 that forms on the side surface that goes out photosphere of the transversary LED light-emitting diode 100 among Fig. 1 a is shaped as triangle.Notice that the top view shape that the micro-structural 104 that forms on the photosphere side surface can be other shapes, comprise, rectangle, or circular arc, or irregularly shaped.
Fig. 2 a and Fig. 2 b show top view and the A-A sectional view of an embodiment of transversary LED light-emitting diode of the present invention respectively.Transversary LED light-emitting diode 200 comprises transparent growth substrates 201, semiconductor epitaxial layers 202, transparent goes out photosphere 203, electrode 210.Wherein, semiconductor epitaxial layers 202 is formed on the first type surface of transparent growth substrates 201.Two electrodes 210 are respectively formed on the N-and P-class limitations layer of semiconductor epitaxial layers 202.Form the transparent photosphere 203 that goes out on the side of transparent growth substrates 201 and semiconductor epitaxial layers 202, form micro-structural 204 on the transparent side surface that goes out photosphere.Figure
the horizontal structure of the LED light-emitting diode light-emitting layer 200 is formed on the side surface 204 of the micro-structure of a top triangular shape.Notice that the top view shape that the micro-structural 204 that forms on the photosphere side surface can be other shapes, comprise, rectangle, or circular arc, or irregularly shaped.The difference of the embodiment that shows with Fig. 1 a and Fig. 1 b is: go out photosphere 203 and also be formed on the first type surface of semiconductor epitaxial layers 202 simultaneously, go out the first type surface that the part of photosphere 203 on the first type surface of semiconductor epitaxial layers 202 is called photosphere 203.Go out to form micro-structural 205 on the first type surface of photosphere 203, the shape of the micro-structural 205 among Fig. 2 a is cones.The shape that goes out the micro-structural 205 on the first type surface of photosphere 203 is that taper shape or pyramid are cylindrical or irregularly shaped.
Fig. 3 a and Fig. 3 b show top view and the A-A sectional view of an embodiment of transversary LED light-emitting diode of the present invention respectively.Transversary LED light-emitting diode 300 comprises transparent growth substrates 301, semiconductor epitaxial layers 302, transparent goes out photosphere 303, electrode 310.Wherein, semiconductor epitaxial layers 302 is formed on the first type surface of transparent growth substrates 301.Two electrodes 310 are respectively formed on the N-and P-class limitations layer of semiconductor epitaxial layers 302.Form the transparent photosphere 303 that goes out on the side of transparent growth substrates 301 and semiconductor epitaxial layers 302, form micro-structural 304 on the transparent side surface that goes out photosphere 303.The top view of the micro-structural 304 that forms on the surface that goes out photosphere 303 of the transversary LED light-emitting diode 300 among Fig. 3 a is shaped as triangle.Notice that the top view shape that the micro-structural 304 that forms on the photosphere side surface can be other shapes, comprise, rectangle, or circular arc, or irregularly shaped.
The side of transparent growth substrates 301 forms micro-structural 305.The top view of the micro-structural 305 that forms on the side of the transparent growth substrates 301 of the transversary LED light-emitting diode 300 among Fig. 3 a is shaped as triangle.Notice that the top view shape of the micro-structural 305 that forms on the side of transparent growth substrates 301 can be other shapes, comprise, rectangle, or circular arc, or irregularly shaped.
Fig. 4 a and Fig. 4 b show top view and the A-A sectional view of an embodiment of transversary LED light-emitting diode of the present invention respectively.Transversary LED light-emitting diode 400 comprises transparent growth substrates 401, semiconductor epitaxial layers 402, transparent goes out photosphere 403, electrode 410.Wherein, semiconductor epitaxial layers 402 is formed on the first type surface of transparent growth substrates 401.Two electrodes 410 are respectively formed on the N-and P-class limitations layer of semiconductor epitaxial layers 402.Form the transparent photosphere 403 that goes out on the side of transparent growth substrates 401 and semiconductor epitaxial layers 402, form micro-structural 404 on the transparent side surface that goes out photosphere 403.The top view of the micro-structural 404 that forms on the surface that goes out photosphere 403 of the transversary LED light-emitting diode 400 among Fig. 4 a is shaped as triangle.Notice that the top view shape that the micro-structural 404 that forms on the photosphere side surface can be other shapes, comprise, rectangle, or circular arc, or irregularly shaped.。
The side of semiconductor epitaxial layers 402 forms micro-structural 406.The top view of the micro-structural 406 that forms on the side of the semiconductor epitaxial layers 402 of the transversary LED light-emitting diode 400 among Fig. 4 a is shaped as triangle.Notice that the top view shape of the micro-structural 406 that forms on the side of semiconductor epitaxial layers 402 can be other shapes, comprise, rectangle, or circular arc, or irregularly shaped.
Fig. 5 shows the top view of an embodiment of micro-structural of the side surface that photosphere of transversary LED light-emitting diode of the present invention.The top view of the micro-structural 507 of the side surface that goes out photosphere of transversary LED light-emitting diode 500 is shaped as rectangle.
Fig. 6 shows the top view of an embodiment of micro-structural of the side surface that photosphere of transversary LED light-emitting diode of the present invention.The top view of the micro-structural 608 of the side surface that goes out photosphere 603 of transversary LED light-emitting diode 600 is shaped as circular arc.
Fig. 7 shows the top view of an embodiment of micro-structural of the side surface that photosphere of transversary LED light-emitting diode of the present invention.The top view of the micro-structural 709 on the surface that goes out photosphere 703 of transversary LED light-emitting diode 700 is shaped as irregularly shaped.
The shape of the first type surface of growth substrates is polygon or circle.The shape of the first type surface of semiconductor epitaxial layers is polygon or circle.The shape that goes out the profile of photosphere is polygon or circle.The shape of the first type surface of growth substrates is identical or inequality with the first type surface of semiconductor epitaxial layers.The shape of the first type surface of growth substrates is identical or inequality with the shape of the profile that goes out photosphere.The shape of the first type surface of semiconductor epitaxial layers is identical or inequality with the shape of the profile that goes out photosphere.
Top concrete description does not limit the scope of the invention, and only provides some specific illustrations of the present invention.Therefore covering scope of the present invention should be determined by claim and their legal equivalents, rather than by above-mentioned specific detailed description and embodiment decision.
Claims (14)
1. light-emitting diode comprises: transparent growth substrates, semiconductor epitaxial layers, transparent go out photosphere, electrode; Wherein, described semiconductor epitaxial layers comprises, N-class limitations layer, active layer, P-class limitations layer; Wherein, described N-class limitations layer is formed on the first type surface of described transparent growth substrates, and described active layer is formed on the described N-class limitations layer, and described P-class limitations layer is formed on the described active layer; Described electrode is respectively formed on described N-class limitations layer and the described P-class limitations layer; It is characterized in that: describedly go out the side that photosphere is formed on described growth substrates and described semiconductor epitaxial layers; The described side surface that goes out photosphere forms micro-structural.
2. according to the light-emitting diode of claim 1, it is characterized in that, describedly go out photosphere and be formed on the first type surface of described semiconductor epitaxial layers.
3. according to the light-emitting diode of claim 2, it is characterized in that described on the described first type surface that is formed on described semiconductor epitaxial layers goes out on the first type surface of photosphere to form micro-structural.
4. according to the light-emitting diode of claim 3, it is characterized in that the shape of the micro-structural on the described first type surface that goes out photosphere is that taper shape or pyramid are cylindrical or irregularly shaped.
5. according to the light-emitting diode of claim 1, it is characterized in that the described top view shape that goes out the micro-structural of photosphere side surface is triangle or rectangle or circular arc or irregularly shaped.
6. according to the light-emitting diode of claim 1, it is characterized in that the side of described semiconductor epitaxial layers forms micro-structural.
7. according to the light-emitting diode of claim 6, it is characterized in that the top view shape of the micro-structural of the side of described semiconductor epitaxial layers is triangle or rectangle or circular arc or irregularly shaped.
8. according to the light-emitting diode of claim 1, it is characterized in that the side of described growth substrates forms micro-structural.
9. light-emitting diode according to Claim 8 is characterized in that, the top view shape of the micro-structural of the side of described growth substrates is triangle or rectangle or circular arc or irregularly shaped.
10. according to the light-emitting diode of claim 1, it is characterized in that the described material that goes out photosphere is transparent insulating material.
11. the light-emitting diode according to claim 10 is characterized in that, described transparent insulating material is silica or silicon nitride or silicon-on-glass.
12. the light-emitting diode according to claim 1 is characterized in that, the described contour shape that goes out photosphere is circle or polygon.
13. the light-emitting diode according to claim 1 is characterized in that, the shape of described semiconductor epitaxial layers is circle or polygon.
14. the light-emitting diode according to claim 1 is characterized in that, the shape of described growth substrates is circle or polygon.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810802A (en) * | 2014-12-27 | 2016-07-27 | 展晶科技(深圳)有限公司 | Light emitting diode package structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000349341A (en) * | 1999-03-31 | 2000-12-15 | Sharp Corp | Light emitting diode and manufacture of the same and method for mounting light emitting diode on electric wiring board |
| CN101651181A (en) * | 2008-08-11 | 2010-02-17 | 台湾积体电路制造股份有限公司 | light-emitting diode |
| CN201829525U (en) * | 2010-08-02 | 2011-05-11 | 亚威朗光电(中国)有限公司 | Light-emitting diode |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000349341A (en) * | 1999-03-31 | 2000-12-15 | Sharp Corp | Light emitting diode and manufacture of the same and method for mounting light emitting diode on electric wiring board |
| CN101651181A (en) * | 2008-08-11 | 2010-02-17 | 台湾积体电路制造股份有限公司 | light-emitting diode |
| CN201829525U (en) * | 2010-08-02 | 2011-05-11 | 亚威朗光电(中国)有限公司 | Light-emitting diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810802A (en) * | 2014-12-27 | 2016-07-27 | 展晶科技(深圳)有限公司 | Light emitting diode package structure |
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Application publication date: 20120208 |