TW201614670A - Data storage device and data accessing method thereof - Google Patents

Data storage device and data accessing method thereof

Info

Publication number
TW201614670A
TW201614670A TW103135459A TW103135459A TW201614670A TW 201614670 A TW201614670 A TW 201614670A TW 103135459 A TW103135459 A TW 103135459A TW 103135459 A TW103135459 A TW 103135459A TW 201614670 A TW201614670 A TW 201614670A
Authority
TW
Taiwan
Prior art keywords
data
pages
storage device
chips
area
Prior art date
Application number
TW103135459A
Other languages
English (en)
Other versions
TWI556254B (zh
Inventor
Ching-Ke Chen
Po-Sheng Chou
Yang-Chih Shen
Original Assignee
Silicon Motion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Motion Inc filed Critical Silicon Motion Inc
Priority to TW103135459A priority Critical patent/TWI556254B/zh
Priority to CN201410614783.2A priority patent/CN105513638B/zh
Priority to CN202010304166.8A priority patent/CN111538676B/zh
Priority to US14/711,472 priority patent/US9741451B2/en
Publication of TW201614670A publication Critical patent/TW201614670A/zh
Application granted granted Critical
Publication of TWI556254B publication Critical patent/TWI556254B/zh
Priority to US15/649,394 priority patent/US10283216B2/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52Protection of memory contents; Detection of errors in memory contents
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G06F11/108Parity data distribution in semiconductor storages, e.g. in SSD
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411Online error correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Detection And Correction Of Errors (AREA)
TW103135459A 2014-10-14 2014-10-14 資料儲存裝置及其資料存取方法 TWI556254B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW103135459A TWI556254B (zh) 2014-10-14 2014-10-14 資料儲存裝置及其資料存取方法
CN201410614783.2A CN105513638B (zh) 2014-10-14 2014-11-04 数据储存装置及其数据存取方法
CN202010304166.8A CN111538676B (zh) 2014-10-14 2014-11-04 数据储存装置及其数据存取方法
US14/711,472 US9741451B2 (en) 2014-10-14 2015-05-13 Data storage device and data maintenance method thereof
US15/649,394 US10283216B2 (en) 2014-10-14 2017-07-13 Data storage device and data maintenance method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103135459A TWI556254B (zh) 2014-10-14 2014-10-14 資料儲存裝置及其資料存取方法

Publications (2)

Publication Number Publication Date
TW201614670A true TW201614670A (en) 2016-04-16
TWI556254B TWI556254B (zh) 2016-11-01

Family

ID=55655524

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103135459A TWI556254B (zh) 2014-10-14 2014-10-14 資料儲存裝置及其資料存取方法

Country Status (3)

Country Link
US (2) US9741451B2 (zh)
CN (2) CN105513638B (zh)
TW (1) TWI556254B (zh)

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TWI556254B (zh) * 2014-10-14 2016-11-01 慧榮科技股份有限公司 資料儲存裝置及其資料存取方法
CN107391296B (zh) 2016-04-27 2020-11-06 慧荣科技股份有限公司 存取闪存模块的方法及相关的闪存控制器与记忆装置
CN107391026B (zh) 2016-04-27 2020-06-02 慧荣科技股份有限公司 闪存装置及闪存存储管理方法
US10289487B2 (en) 2016-04-27 2019-05-14 Silicon Motion Inc. Method for accessing flash memory module and associated flash memory controller and memory device
US10019314B2 (en) 2016-04-27 2018-07-10 Silicon Motion Inc. Flash memory apparatus and storage management method for flash memory
CN111679787B (zh) 2016-04-27 2023-07-18 慧荣科技股份有限公司 闪存装置、闪存控制器及闪存存储管理方法
TWI720246B (zh) * 2017-08-30 2021-03-01 慧榮科技股份有限公司 資料儲存裝置以及其操作方法
KR102524432B1 (ko) 2018-04-09 2023-04-24 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
TWI714248B (zh) * 2019-09-09 2020-12-21 新唐科技股份有限公司 記憶體控制器與資料保護方法
KR20210128224A (ko) * 2020-04-16 2021-10-26 에스케이하이닉스 주식회사 스토리지 장치 및 그것의 동작 방법

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Also Published As

Publication number Publication date
CN105513638B (zh) 2020-05-15
CN105513638A (zh) 2016-04-20
US20170309350A1 (en) 2017-10-26
US20160103734A1 (en) 2016-04-14
US10283216B2 (en) 2019-05-07
TWI556254B (zh) 2016-11-01
CN111538676B (zh) 2023-08-15
US9741451B2 (en) 2017-08-22
CN111538676A (zh) 2020-08-14

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