TW201612240A - Composition for producing a sacrifice layer and process for producing the composition, and a semiconductor device having air gap produced using the composition and a process for producing a semiconductor device using the composition - Google Patents

Composition for producing a sacrifice layer and process for producing the composition, and a semiconductor device having air gap produced using the composition and a process for producing a semiconductor device using the composition

Info

Publication number
TW201612240A
TW201612240A TW104124646A TW104124646A TW201612240A TW 201612240 A TW201612240 A TW 201612240A TW 104124646 A TW104124646 A TW 104124646A TW 104124646 A TW104124646 A TW 104124646A TW 201612240 A TW201612240 A TW 201612240A
Authority
TW
Taiwan
Prior art keywords
composition
producing
semiconductor device
air gap
sacrifice layer
Prior art date
Application number
TW104124646A
Other languages
English (en)
Inventor
Shigemasa Nakasugi
Kinuta Takafumi
Go Noya
Hiroshi Yanagita
Yusuke Hama
Original Assignee
Az Electronic Materials Luxembourg Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg Sarl filed Critical Az Electronic Materials Luxembourg Sarl
Publication of TW201612240A publication Critical patent/TW201612240A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/02—Polyamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/0206—Polyalkylene(poly)amines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/0233—Polyamines derived from (poly)oxazolines, (poly)oxazines or having pendant acyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/026—Wholly aromatic polyamines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW104124646A 2014-07-31 2015-07-30 Composition for producing a sacrifice layer and process for producing the composition, and a semiconductor device having air gap produced using the composition and a process for producing a semiconductor device using the composition TW201612240A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014156728 2014-07-31

Publications (1)

Publication Number Publication Date
TW201612240A true TW201612240A (en) 2016-04-01

Family

ID=55217576

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104124646A TW201612240A (en) 2014-07-31 2015-07-30 Composition for producing a sacrifice layer and process for producing the composition, and a semiconductor device having air gap produced using the composition and a process for producing a semiconductor device using the composition

Country Status (9)

Country Link
US (1) US20170218227A1 (zh)
EP (1) EP3176811A4 (zh)
JP (1) JPWO2016017678A1 (zh)
KR (1) KR20170040271A (zh)
CN (1) CN106575617A (zh)
IL (1) IL249779A0 (zh)
SG (1) SG11201610923RA (zh)
TW (1) TW201612240A (zh)
WO (1) WO2016017678A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI656917B (zh) * 2016-09-12 2019-04-21 日商斯庫林集團股份有限公司 犧牲膜形成方法、基板處理方法以及基板處理裝置
TWI754108B (zh) * 2017-10-26 2022-02-01 日商東京威力科創股份有限公司 半導體裝置之製造方法及基板處理裝置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3150668A4 (en) * 2014-05-29 2018-01-17 AZ Electronic Materials (Luxembourg) S.à.r.l. Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition
WO2018235877A1 (ja) * 2017-06-21 2018-12-27 Jsr株式会社 カバー膜形成方法
JP6977474B2 (ja) * 2017-10-23 2021-12-08 東京エレクトロン株式会社 半導体装置の製造方法

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US5461003A (en) 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
JP2763023B2 (ja) 1995-12-18 1998-06-11 日本電気株式会社 半導体装置の製造方法
CN1252810C (zh) 1997-01-21 2006-04-19 B·F·谷德里奇公司 用于超低电容互连的有空气隙的半导体装置的制造
KR100307490B1 (ko) 1999-08-31 2001-11-01 한신혁 반도체 장치의 기생 용량 감소 방법
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP3765289B2 (ja) 2002-05-27 2006-04-12 Ｊｓｒ株式会社 多層配線間の空洞形成方法
JP2004063749A (ja) 2002-07-29 2004-02-26 Asahi Kasei Corp エアアイソレーション構造を有する半導体装置
JP4090867B2 (ja) * 2002-12-24 2008-05-28 旭化成株式会社 半導体装置の製造法
JP2004319977A (ja) * 2003-03-28 2004-11-11 Fuji Photo Film Co Ltd 絶縁膜形成用材料及びそれを用いた絶縁膜
EP1632956A1 (en) * 2004-09-07 2006-03-08 Rohm and Haas Electronic Materials, L.L.C. Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films
JP5012186B2 (ja) * 2007-05-08 2012-08-29 日立化成工業株式会社 マイクロ流体システム用支持ユニットの製造方法
EP2615635B1 (en) * 2010-09-10 2016-05-25 Mitsui Chemicals, Inc. Semiconductor device production method and rinse
JP5636277B2 (ja) * 2010-12-27 2014-12-03 富士フイルム株式会社 多孔質絶縁膜及びその製造方法
US8927430B2 (en) * 2011-07-12 2015-01-06 International Business Machines Corporation Overburden removal for pore fill integration approach
JP2013103977A (ja) * 2011-11-11 2013-05-30 Mitsubishi Rayon Co Ltd 重合体または重合体溶液の製造方法、重合体、重合体溶液

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI656917B (zh) * 2016-09-12 2019-04-21 日商斯庫林集團股份有限公司 犧牲膜形成方法、基板處理方法以及基板處理裝置
US11036139B2 (en) 2016-09-12 2021-06-15 SCREEN Holdings Co., Ltd. Sacrificial film forming method, substrate treatment method, and substrate treatment device
TWI754108B (zh) * 2017-10-26 2022-02-01 日商東京威力科創股份有限公司 半導體裝置之製造方法及基板處理裝置

Also Published As

Publication number Publication date
CN106575617A (zh) 2017-04-19
WO2016017678A1 (ja) 2016-02-04
KR20170040271A (ko) 2017-04-12
US20170218227A1 (en) 2017-08-03
SG11201610923RA (en) 2017-02-27
JPWO2016017678A1 (ja) 2017-06-15
EP3176811A1 (en) 2017-06-07
EP3176811A4 (en) 2018-04-04
IL249779A0 (en) 2017-02-28

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