TW201546916A - Ultraviolet light emitting device - Google Patents

Ultraviolet light emitting device Download PDF

Info

Publication number
TW201546916A
TW201546916A TW104107135A TW104107135A TW201546916A TW 201546916 A TW201546916 A TW 201546916A TW 104107135 A TW104107135 A TW 104107135A TW 104107135 A TW104107135 A TW 104107135A TW 201546916 A TW201546916 A TW 201546916A
Authority
TW
Taiwan
Prior art keywords
ultraviolet light
range
light output
light
emitting device
Prior art date
Application number
TW104107135A
Other languages
Chinese (zh)
Inventor
Akihiko Murai
Shintaro Hayashi
Original Assignee
Panasonic Ip Man Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Ip Man Co Ltd filed Critical Panasonic Ip Man Co Ltd
Publication of TW201546916A publication Critical patent/TW201546916A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2632Circuits therefor for testing diodes
    • G01R31/2635Testing light-emitting diodes, laser diodes or photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

The UV-emitting device production method comprises: measuring a drive voltage and a light output for each of a plurality of UV-emitting elements so as to classify the elements into a classification matrix comprising a plurality of classification regions resulting from a classification performed according to a plurality of drive voltage ranges and a plurality of light output ranges; selecting a plurality of UV-emitting elements only from among the UV-emitting elements belonging to a first classification region of the classification matrix and from among the UV-emitting elements belonging to a second classification region of the classification matrix; and mounting the selected elements onto a mounting substrate. The first classification region is defined by a predetermined drive voltage range among the plurality of drive voltage ranges, and a light output range, which has a low light output among two light output ranges symmetrically positioned in reference to a central light output range among the plurality of light output ranges. The second classification region is defined by the predetermined drive voltage range and the light output range which has a high light output among the two light output ranges.

Description

紫外線發光裝置Ultraviolet light emitting device

本發明,係關於一種紫外線發光裝置,更詳細而言,係關於一種包含複數紫外線發光元件的紫外線發光裝置。The present invention relates to an ultraviolet light-emitting device, and more particularly to an ultraviolet light-emitting device comprising a plurality of ultraviolet light-emitting elements.

自以往,作為發光裝置,有人提案一種LED發光裝置,包含串聯連接有複數LED晶片的串聯電路(日本專利申請案公開編號2011-228602(以下稱「文獻1」)。文獻1中記載,作為LED晶片,使用GaN類藍色發光二極體。In the related art, an LED light-emitting device has been proposed as a light-emitting device, and includes a series circuit in which a plurality of LED chips are connected in series (Japanese Patent Application Laid-Open No. 2011-228602 (hereinafter referred to as "Document 1"). For the wafer, a GaN-based blue light-emitting diode is used.

又,作為一種發光裝置的紫外線發光裝置的領域中,業界期待光輸出的高輸出化及使用壽命增長。Further, in the field of an ultraviolet light-emitting device which is a light-emitting device, the industry expects an increase in output of light output and an increase in service life.

鑒於上述事由,本發明的目的在於提供一種紫外線發光裝置,可實現光輸出的高輸出化及使用壽命增長。In view of the above, an object of the present invention is to provide an ultraviolet light-emitting device which can achieve high output of light output and an increase in service life.

本發明的紫外線發光裝置,包含複數紫外線發光元件,與安裝有該複數紫外線發光元件的安裝基板。本發明的紫外線發光裝置中,該複數紫外線發光元件並聯連接。該複數紫外線發光元件,僅包含:具有「按照複數驅動電壓範圍與複數光輸出範圍分類為複數分類區域的分類矩陣中,該複數分類區域內第1分類區域的特性」的紫外線發光元件,與具有該複數分類區域內第2分類區域的特性的紫外線發光元件。該第1分類區域,由下列者限定:該複數驅動電壓範圍中之既定的一個驅動電壓範圍;與該複數光輸出範圍之中心的光輸出範圍為基準,位在對稱位置的兩個光輸出範圍中,光輸出較低的光輸出範圍。該第2分類區域,由下列者限定:該既定的一個驅動電壓範圍;與該兩個光輸出範圍中,光輸出較高的光輸出範圍。The ultraviolet light-emitting device of the present invention includes a plurality of ultraviolet light-emitting elements and a mounting substrate on which the plurality of ultraviolet light-emitting elements are mounted. In the ultraviolet light-emitting device of the present invention, the plurality of ultraviolet light-emitting elements are connected in parallel. The plurality of ultraviolet light-emitting elements include only ultraviolet light-emitting elements having "characteristics of the first classification region in the plurality of classification regions in which the complex driving voltage range and the complex light output range are classified into a plurality of classification regions" and having An ultraviolet light-emitting element having characteristics of the second classification region in the plurality of classification regions. The first classification area is defined by a predetermined one of the plurality of driving voltage ranges; the light output range of the center of the complex light output range is a reference, and two light output ranges of the symmetrical position Medium, light output has a lower light output range. The second classification region is defined by: the predetermined one driving voltage range; and the light output range in which the light output is higher in the two light output ranges.

本發明的紫外線發光裝置,包含複數紫外線發光元件,與安裝有該複數紫外線發光元件的安裝基板。本發明的紫外線發光裝置中,該複數紫外線發光元件並聯連接。該複數紫外線發光元件,僅包含:具有「按照複數驅動電壓範圍與複數光輸出範圍分類為複數分類區域的分類矩陣中,該複數分類區域內一個分類區域的特性」的紫外線發光元件。該一個分類區域,由下列者限定:該複數驅動電壓範圍中之既定的驅動電壓範圍;與該複數光輸出範圍之中心的光輸出範圍。The ultraviolet light-emitting device of the present invention includes a plurality of ultraviolet light-emitting elements and a mounting substrate on which the plurality of ultraviolet light-emitting elements are mounted. In the ultraviolet light-emitting device of the present invention, the plurality of ultraviolet light-emitting elements are connected in parallel. The plurality of ultraviolet light-emitting elements include only ultraviolet light-emitting elements having "a characteristic of one classification region in the plurality of classification regions in a classification matrix in which the complex driving voltage range and the complex light output range are classified into a plurality of classification regions". The one classification region is defined by a predetermined driving voltage range in the complex driving voltage range and a light output range at the center of the complex optical output range.

依本發明的紫外線發光裝置,可實現光輸出的高輸出化及使用壽命增長。According to the ultraviolet light-emitting device of the present invention, high output of the light output and an increase in the service life can be achieved.

於以下,根據圖1至圖4說明關於本實施形態的紫外線發光裝置1。且表1,顯示分類矩陣的一例。又,關於分類矩陣各要素於後詳述。 Hereinafter, the ultraviolet light-emitting device 1 of the present embodiment will be described with reference to Figs. 1 to 4 . And Table 1 shows an example of a classification matrix. Further, each element of the classification matrix will be described in detail later.

如圖1之例所示,紫外線發光裝置1,包含:複數紫外線發光元件2;與安裝有複數紫外線發光元件2的安裝基板3。紫外線發光裝置1中,並聯連接複數紫外線發光元件2。如表1之例所示,作為可選擇者(一例),複數紫外線發光元件2,僅包含:紫外線發光元件2,具有「按照複數驅動電壓範圍與複數光輸出範圍分類為複數分類區域X1Y1~X3Y10的分類矩陣中,複數分類區域X1Y1~X3Y10內第1分類區域X1Y5特性」;及紫外線發光元件2,具有「複數分類區域X1Y1~X3Y10內第2分類區域X3Y5特性。第1分類區域X1Y5,由下列者限定:複數驅動電壓範圍中之既定的一個驅動電壓範圍;與複數光輸出範圍之中心的光輸出範圍為基準,位在對稱位置的兩個光輸出範圍中,光輸出較低的光輸出範圍。第2分類區域X3Y5,由下列者限定:複數驅動電壓範圍中之既定的一個驅動電壓範圍;與兩個光輸出範圍中,光輸出較高的光輸出範圍。藉此,紫外線發光裝置1中,複數紫外線發光元件2,僅包含:第1分類區域X1Y5的紫外線發光元件2;與第2分類區域X3Y5的紫外線發光元件2,故可抑制流往各紫外線發光元件2的電流的差異。藉此,依紫外線發光裝置1,可實現光輸出的高輸出化及使用壽命增長。As shown in the example of Fig. 1, the ultraviolet light-emitting device 1 includes a plurality of ultraviolet light-emitting elements 2 and a mounting substrate 3 on which a plurality of ultraviolet light-emitting elements 2 are mounted. In the ultraviolet light-emitting device 1, a plurality of ultraviolet light-emitting elements 2 are connected in parallel. As shown in the example of Table 1, as a selectable person (an example), the plurality of ultraviolet light-emitting elements 2 include only the ultraviolet light-emitting element 2, and have "various classification regions X1Y1 to X3Y10 according to the complex driving voltage range and the complex light output range. In the classification matrix, the first classification region X1Y5 characteristic in the complex classification regions X1Y1 to X3Y10; and the ultraviolet light-emitting device 2 have the second classification region X3Y5 characteristic in the plural classification regions X1Y1 to X3Y10. The first classification region X1Y5 is composed of the following Qualified: a predetermined driving voltage range in the complex driving voltage range; the light output range at the center of the complex optical output range is the reference, the light output range is lower in the two light output ranges in the symmetrical position, and the light output is lower The second classification area X3Y5 is defined by a predetermined one of the plurality of driving voltage ranges and a light output range of the two light output ranges, whereby the ultraviolet light emitting device 1 is used. The plurality of ultraviolet light-emitting elements 2 include only the ultraviolet light-emitting element 2 of the first classification area X1Y5 and the purple of the second classification area X3Y5 Since the external light-emitting element 2 can suppress the difference in current flowing to each of the ultraviolet light-emitting elements 2, the ultraviolet light-emitting device 1 can achieve high output of light output and an increase in service life.

紫外線發光裝置1,亦可包含安裝有安裝基板3的配線基板4。此時,安裝基板3,構成:用來中繼複數紫外線發光元件2與配線基板4的中介片。所謂「中繼複數紫外線發光元件2與配線基板4」,包含電性連接複數紫外線發光元件2與配線基板4的概念。The ultraviolet light emitting device 1 may include a wiring substrate 4 on which the mounting substrate 3 is mounted. At this time, the substrate 3 is mounted to form an interposer for relaying the plurality of ultraviolet light-emitting elements 2 and the wiring substrate 4. The "relay of the plurality of ultraviolet light-emitting elements 2 and the wiring board 4" includes the concept of electrically connecting the plurality of ultraviolet light-emitting elements 2 and the wiring board 4.

以下,詳細說明關於紫外線發光裝置1各構成要素。Hereinafter, each component of the ultraviolet light-emitting device 1 will be described in detail.

紫外線發光元件2,由紫外線LED晶片(以下,亦稱「UV-LED」。)構成。The ultraviolet light-emitting element 2 is composed of an ultraviolet LED chip (hereinafter also referred to as "UV-LED").

如圖2之例所示,UV-LED2,包含基板20,於基板的第1面側(圖2之例中係上表面側),自接近第1面的一側起依序形成:緩衝層21、第1導電型半導體層22、發光層23、第2導電型半導體層24。圖2雖顯示多層構造,但UV-LED2具有例如平台式構造。藉由將多層構造的一部分,自多層構造的表面側(第2導電型半導體層24的一側)蝕刻至第1導電型半導體層22的途中,以形成平台式構造。多層構造的表面,以第2導電型半導體層24的表面構成。UV-LED2中,在第1導電型半導體層22露出的表面上,形成第1電極25,在第2導電型半導體層24的表面上,形成第2電極26。UV-LED2中,第1導電型半導體層22的導電型(第1導電型)係n型,第2導電型半導體層24的導電型(第2導電型)係p型。藉此,UV-LED2中,第1電極25構成負電極,第2電極26構成正電極。UV-LED2,藉由於第1電極25與第2電極26之間通電放射紫外線。又,UV-LED2中,第1導電型係p型,第2導電型係n型時,第1電極25構成正電極,第2電極26構成負電極。As shown in the example of FIG. 2, the UV-LED 2 includes the substrate 20 on the first surface side of the substrate (the upper surface side in the example of FIG. 2), and is sequentially formed from the side close to the first surface: a buffer layer 21. The first conductive semiconductor layer 22, the light-emitting layer 23, and the second conductive semiconductor layer 24. Although FIG. 2 shows a multilayer construction, the UV-LED 2 has, for example, a platform configuration. A part of the multilayer structure is etched from the surface side of the multilayer structure (the side of the second conductive type semiconductor layer 24) to the middle of the first conductive type semiconductor layer 22 to form a land structure. The surface of the multilayer structure is constituted by the surface of the second conductive semiconductor layer 24. In the UV-LED 2, the first electrode 25 is formed on the surface on which the first conductive semiconductor layer 22 is exposed, and the second electrode 26 is formed on the surface of the second conductive semiconductor layer 24. In the UV-LED 2, the conductivity type (first conductivity type) of the first conductivity type semiconductor layer 22 is n type, and the conductivity type (second conductivity type) of the second conductivity type semiconductor layer 24 is p type. Thereby, in the UV-LED 2, the first electrode 25 constitutes a negative electrode, and the second electrode 26 constitutes a positive electrode. The UV-LED 2 emits ultraviolet rays by being electrically connected between the first electrode 25 and the second electrode 26. Further, in the UV-LED 2, the first conductivity type is a p-type, and when the second conductivity type is an n-type, the first electrode 25 constitutes a positive electrode, and the second electrode 26 constitutes a negative electrode.

UV-LED2中,第1電極25及第2電極26,設於此UV-LED2的厚度方向之一面側。藉此,紫外線發光元件2,可覆晶安裝於安裝基板3。亦即,各紫外線發光元件2,搭載於安裝基板3,俾將其本身(2)的第1電極25及第2電極26的一側連接於安裝基板3。UV-LED2中,基板20,以由發光層23發出的紫外線可透射的材料形成,基板20的第2面(圖2之例中係下表面),構成光取出面。UV-LED2中,由發光層23發出的紫外線自基板20的第2面放射。UV-LED2中,包含第1導電型半導體層22、發光層23、第2導電型半導體層24的多層構造,以MOVPE法形成。第1電極25及第2電極26,分別包含歐姆電極與接墊電極。In the UV-LED 2, the first electrode 25 and the second electrode 26 are provided on one side of the thickness direction of the UV-LED 2. Thereby, the ultraviolet light emitting element 2 can be flip-chip mounted on the mounting substrate 3. In other words, each of the ultraviolet light-emitting elements 2 is mounted on the mounting substrate 3, and one side of the first electrode 25 and the second electrode 26 of the self (2) is connected to the mounting substrate 3. In the UV-LED 2, the substrate 20 is formed of a material that is transparent to ultraviolet light emitted from the light-emitting layer 23, and the second surface of the substrate 20 (the lower surface in the example of FIG. 2) constitutes a light extraction surface. In the UV-LED 2, ultraviolet rays emitted from the light-emitting layer 23 are radiated from the second surface of the substrate 20. The UV-LED 2 includes a multilayer structure of the first conductive semiconductor layer 22, the light-emitting layer 23, and the second conductive semiconductor layer 24, and is formed by the MOVPE method. The first electrode 25 and the second electrode 26 respectively include an ohmic electrode and a pad electrode.

更詳細而言,UV-LED2,如下構成。More specifically, the UV-LED 2 is constructed as follows.

基板20,以藍寶石基板構成。且緩衝層21,以AlN層構成。第1導電型半導體層22,以n型AlGaN層構成。發光層23,具有多重量子井構造。多重量子井構造,包含第1AlGaN層所構成的阻障層,與第2AlGaN層所構成的井層。第2AlGaN層,其帶隙大於第1AlGaN層。第2導電型半導體層24,包含p型AlGaN層,與p型GaN層。p型GaN層,作為「用來獲得與第2電極26良好的歐姆接觸的p型接觸層」設置。The substrate 20 is composed of a sapphire substrate. Further, the buffer layer 21 is composed of an AlN layer. The first conductive semiconductor layer 22 is formed of an n-type AlGaN layer. The luminescent layer 23 has a multiple quantum well structure. The multiple quantum well structure includes a barrier layer composed of a first AlGaN layer and a well layer composed of a second AlGaN layer. The second AlGaN layer has a larger band gap than the first AlGaN layer. The second conductive semiconductor layer 24 includes a p-type AlGaN layer and a p-type GaN layer. The p-type GaN layer is provided as "a p-type contact layer for obtaining good ohmic contact with the second electrode 26".

UV-LED2的發光峰波長,位在260nm~280nm的範圍。藉此,UV-LED2,於UV-C的波長區具有發光峰波長。UV-C的波長區,按照例如國際照明委員會(CIE)中依紫外線波長的分類,為100nm~280nm。The luminescence peak wavelength of the UV-LED 2 is in the range of 260 nm to 280 nm. Thereby, the UV-LED 2 has an emission peak wavelength in the wavelength region of the UV-C. The wavelength region of UV-C is, for example, 100 nm to 280 nm in accordance with the classification of ultraviolet wavelengths in the International Commission on Illumination (CIE).

UV-LED2的晶片尺寸,雖設定為400μm□(μm sq.),亦即400μm×400μm,但不限於此。晶片尺寸,可於例如約200μm□(200μm×200μm)~1mm□(1mm×1mm)的範圍適當設定。且UV-LED2的外周形狀,不限於正方形,亦可為例如長方形等。The wafer size of the UV-LED 2 is set to 400 μm □ (μm sq.), that is, 400 μm × 400 μm, but is not limited thereto. The wafer size can be appropriately set, for example, in the range of about 200 μm □ (200 μm × 200 μm) to 1 mm □ (1 mm × 1 mm). Further, the outer peripheral shape of the UV-LED 2 is not limited to a square shape, and may be, for example, a rectangular shape or the like.

如上述,紫外線發光裝置1並聯連接有複數紫外線發光元件2。更詳細而言,紫外線發光裝置1並聯連接有6個紫外線發光元件2。As described above, the ultraviolet light-emitting device 1 is connected in parallel with the plurality of ultraviolet light-emitting elements 2. More specifically, the ultraviolet light-emitting device 1 is connected in parallel with six ultraviolet light-emitting elements 2.

紫外線發光裝置1,藉由將複數紫外線發光元件2安裝於安裝基板3,使複數紫外線發光元件2並聯連接。所謂「將紫外線發光元件2安裝於安裝基板3」,係包含「將紫外線發光元件2搭載於安裝基板3而機械性連接並電性連接」的概念。In the ultraviolet light-emitting device 1, the plurality of ultraviolet light-emitting elements 2 are mounted on the mounting substrate 3, and the plurality of ultraviolet light-emitting elements 2 are connected in parallel. The term "mounting the ultraviolet light-emitting element 2 to the mounting substrate 3" includes the concept of "mounting the ultraviolet light-emitting element 2 on the mounting substrate 3 to be mechanically and electrically connected".

紫外線發光裝置1中,安裝基板3,宜以矽基板形成。藉此,紫外線發光裝置1中,相較於安裝基板3以樹脂類基板形成的情形,可提升散熱性,可實現光輸出的高輸出化。In the ultraviolet light-emitting device 1, the mounting substrate 3 is preferably formed of a germanium substrate. As a result, in the ultraviolet light-emitting device 1, when the mounting substrate 3 is formed of a resin substrate, heat dissipation can be improved, and high output of light output can be achieved.

安裝基板3,在以矽基板形成時,如圖3之例所示,可包含:矽基板30、電氣絕緣膜31、第1導體部32、第2導體部33、第1端子部34、第2端子部35。When the mounting substrate 3 is formed of a germanium substrate, as shown in FIG. 3, the mounting substrate 3 may include a germanium substrate 30, an electrical insulating film 31, a first conductor portion 32, a second conductor portion 33, a first terminal portion 34, and a first portion. 2 terminal portion 35.

電氣絕緣膜31,在矽基板30的表面(圖3之例中係上表面)上形成。電氣絕緣膜31,可以例如矽氧化膜構成。第1導體部32、第2導體部33、第1端子部34及第2端子部35,在電氣絕緣膜31的表面上形成。The electrical insulating film 31 is formed on the surface of the ruthenium substrate 30 (the upper surface in the example of Fig. 3). The electrical insulating film 31 can be formed, for example, of a tantalum oxide film. The first conductor portion 32, the second conductor portion 33, the first terminal portion 34, and the second terminal portion 35 are formed on the surface of the electric insulating film 31.

第1導體部32,係電性連接紫外線發光元件2的第1電極25的導體部。第2導體部33,係電性連接紫外線發光元件2的第2電極26的導體部。The first conductor portion 32 electrically connects the conductor portion of the first electrode 25 of the ultraviolet light-emitting element 2. The second conductor portion 33 is electrically connected to the conductor portion of the second electrode 26 of the ultraviolet light-emitting element 2.

更詳細而言,紫外線發光裝置1中,紫外線發光元件2的第1電極25與安裝基板3的第1導體部32以第1接合部36接合,且紫外線發光元件2的第2電極26與安裝基板3的第2導體部33以第2接合部37接合。第1接合部36及第2接合部37,以具有導電性的凸塊構成。作為凸塊的材料,雖採用Au,但不限於此,例如亦可採用Al、Cu等。第1接合部36及第2接合部37,不限於具有導電性的凸塊,例如亦可以焊料等形成。More specifically, in the ultraviolet light-emitting device 1 , the first electrode 25 of the ultraviolet light-emitting element 2 and the first conductor portion 32 of the mounting substrate 3 are joined by the first bonding portion 36 , and the second electrode 26 of the ultraviolet light-emitting element 2 is mounted. The second conductor portion 33 of the substrate 3 is joined by the second joint portion 37. The first joint portion 36 and the second joint portion 37 are formed of conductive bumps. As the material of the bump, although Au is used, it is not limited thereto, and for example, Al, Cu, or the like may be used. The first bonding portion 36 and the second bonding portion 37 are not limited to the conductive bumps, and may be formed, for example, by solder or the like.

紫外線發光裝置1中,第1接合部36及第2接合部37係導電性凸塊時,第2接合部37的數量宜多於第1接合部36的數量(參照圖3的虛線之37)。藉此,紫外線發光裝置1可提升散熱性。In the ultraviolet light-emitting device 1, when the first bonding portion 36 and the second bonding portion 37 are conductive bumps, the number of the second bonding portions 37 is preferably larger than the number of the first bonding portions 36 (refer to 37 of the broken line in FIG. 3). . Thereby, the ultraviolet light-emitting device 1 can improve heat dissipation.

安裝基板3,更包含:構成「並聯連接複數紫外線發光元件2的並聯電路之一對輸入端的一方」之第1端子部34;與構成一對輸入端的另一方之第2端子部35。圖3之例中,第1端子部34,藉由第1導體部32,電性連接複數紫外線發光元件2的第1電極25,另一方面,第2端子部35,藉由第2導體部33,電性連接複數紫外線發光元件2的第2電極26。藉此,紫外線發光裝置1,於第1端子部34與第2端子部35之間供電,藉此,對所有紫外線發光元件2供電。The mounting substrate 3 further includes a first terminal portion 34 constituting "one of the parallel circuits of the parallel connection of the plurality of ultraviolet light-emitting elements 2 and one of the input terminals", and a second terminal portion 35 constituting the other of the pair of input terminals. In the example of FIG. 3, the first terminal portion 34 is electrically connected to the first electrode 25 of the plurality of ultraviolet light-emitting elements 2 by the first conductor portion 32, and the second terminal portion 35 is provided by the second conductor portion. 33. The second electrode 26 of the plurality of ultraviolet light-emitting elements 2 is electrically connected. Thereby, the ultraviolet light-emitting device 1 supplies power between the first terminal portion 34 and the second terminal portion 35, thereby supplying power to all of the ultraviolet light-emitting elements 2.

第1導體部32、第2導體部33、第1端子部34及第2端子部35,宜包含:Au層,及介在於Au層與電氣絕緣膜31之間,相較於Au層,與電氣絕緣膜31的密接性良好的層(以下,稱「密接層」)。作為密接層的材料,雖例如採用Ti,但不限於此,例如可採用Cr、Nb、Zr、TiN、TaN等。The first conductor portion 32, the second conductor portion 33, the first terminal portion 34, and the second terminal portion 35 preferably include an Au layer and a layer between the Au layer and the electrical insulating film 31, compared to the Au layer. A layer having good adhesion between the electrical insulating film 31 (hereinafter referred to as "adhesive layer"). As the material of the adhesion layer, for example, Ti is used, but it is not limited thereto, and for example, Cr, Nb, Zr, TiN, TaN or the like can be used.

安裝基板3的外周形狀,雖為正方形,但不限於此。安裝基板3的外周形狀亦可為例如長方形,亦可為矩形以外的多角形狀,圓形等。所謂「矩形」,意指所有的角係直角的四角形,包含長方形與正方形兩者。The outer peripheral shape of the mounting substrate 3 is a square shape, but is not limited thereto. The outer peripheral shape of the mounting substrate 3 may be, for example, a rectangular shape, a polygonal shape other than a rectangular shape, a circular shape, or the like. By "rectangular" is meant a quadrangle of all horns at right angles, including both rectangles and squares.

又,安裝基板3不限於以矽基板形成,例如亦可以陶瓷基板構成。Further, the mounting substrate 3 is not limited to being formed of a germanium substrate, and may be formed of, for example, a ceramic substrate.

配線基板4宜係金屬基底印刷配線板。藉此,紫外線發光裝置1可更提升散熱性。The wiring board 4 is preferably a metal base printed wiring board. Thereby, the ultraviolet light-emitting device 1 can further improve heat dissipation.

如圖4之例所示,金屬基底印刷配線板,包含:金屬板40、於金屬板40的表面以既定圖案形成的電氣絕緣層41、形成於電氣絕緣層41的表面之第1配線部42、形成於電氣絕緣層41的表面之第2配線部43。圖4中,省略複數紫外線發光元件2的圖示。紫外線發光裝置1,包含:接合安裝基板3與金屬板40的第3接合部10;電性連接第1端子部34與第1配線部42的第1金屬線11;電性連接第2端子部35與第2配線部43的第2金屬線12。第3接合部10,以金屬與樹脂的混合材料形成。第3接合部10,宜以選自於金屬與樹脂的混合材料、焊料、共晶合金的群組之一種材料形成。藉此,紫外線發光裝置1,可將自複數紫外線發光元件2傳至安裝基板3的熱,藉由第3接合部10及配線基板4高效率地散熱。金屬與樹脂的混合材料所構成的第3接合部10,可以例如導電膠形成。作為導電膠,例如可採用銀膠、金膠、銅膠等。作為焊料,宜係例如AuSn、SnAgCu等無鉛焊料。作為共晶合金,可採用例如AuSn等。此情形下,於製造時,需於金屬板40的表面中之接合表面,預先進行「形成Au或Ag所構成的金屬層」之前處理。藉此,紫外線發光裝置1,可於製造時,以共晶接合法接合安裝基板3與金屬板40。As shown in the example of FIG. 4, the metal base printed wiring board includes a metal plate 40, an electrical insulating layer 41 formed on a surface of the metal plate 40 in a predetermined pattern, and a first wiring portion 42 formed on the surface of the electrical insulating layer 41. The second wiring portion 43 formed on the surface of the electrical insulating layer 41. In Fig. 4, the illustration of the plurality of ultraviolet light-emitting elements 2 is omitted. The ultraviolet light-emitting device 1 includes a third bonding portion 10 that bonds the mounting substrate 3 and the metal plate 40, a first metal wire 11 that electrically connects the first terminal portion 34 and the first wiring portion 42, and a second terminal portion that is electrically connected. 35 and the second metal wire 12 of the second wiring portion 43. The third joint portion 10 is formed of a mixed material of metal and resin. The third joint portion 10 is preferably formed of a material selected from the group consisting of a mixed material of a metal and a resin, a solder, and a eutectic alloy. Thereby, the ultraviolet light-emitting device 1 can transfer heat from the plurality of ultraviolet light-emitting elements 2 to the mounting substrate 3, and the third bonding portion 10 and the wiring substrate 4 can efficiently dissipate heat. The third joint portion 10 composed of a mixture of a metal and a resin can be formed, for example, of a conductive paste. As the conductive paste, for example, silver paste, gold paste, copper paste or the like can be used. As the solder, a lead-free solder such as AuSn or SnAgCu is preferable. As the eutectic alloy, for example, AuSn or the like can be used. In this case, at the time of manufacture, it is necessary to perform the treatment before the "forming a metal layer made of Au or Ag" on the bonding surface in the surface of the metal plate 40. Thereby, the ultraviolet light-emitting device 1 can bond the mounting substrate 3 and the metal plate 40 by eutectic bonding at the time of manufacture.

金屬板40,宜以各種金屬中,熱傳導率高的金屬形成。金屬板40,雖以鋁基板構成,但不限於此,例如亦可採用銅基板等。The metal plate 40 is preferably formed of a metal having a high thermal conductivity among various metals. The metal plate 40 is formed of an aluminum substrate, but is not limited thereto. For example, a copper substrate or the like may be used.

電氣絕緣層41,雖可以例如絕緣性樹脂形成,但不限於此,亦可以無機氧化物等形成。The electrically insulating layer 41 may be formed of, for example, an insulating resin, but is not limited thereto, and may be formed of an inorganic oxide or the like.

作為第1配線部42及第2配線部43的材料,可採用例如Cu等。第1配線部42及第2配線部43不限於單層構造,亦可為多層構造。As a material of the first wiring portion 42 and the second wiring portion 43, for example, Cu or the like can be used. The first wiring portion 42 and the second wiring portion 43 are not limited to a single layer structure, and may have a multilayer structure.

作為第1金屬線11及第2金屬線12,可採用例如金線、銀線、銅線、鋁線等。As the first metal wire 11 and the second metal wire 12, for example, a gold wire, a silver wire, a copper wire, an aluminum wire or the like can be used.

又,相較於藍色LED晶片,紫外線LED晶片(UV-LED)的驅動電壓較高。因此,紫外線發光裝置1中,例如用於除菌、殺菌等用途時,並聯連接複數紫外線發光元件2,俾可以約12V的電源等驅動。然而,相較於藍色LED晶片,紫外線LED晶片其每一晶片的驅動電壓的差異較大。藍色LED晶片的驅動電壓,例如約為3.2V~3.3V。相對於此,紫外線LED晶片的驅動電壓約為8V~10V。紫外線LED晶片的驅動電壓,不僅有製造時之晶圓的面內差異,亦有晶圓間的差異、批次間的差異等。因此,以一定電流驅動「自驅動電壓包含於8V~10V的範圍之紫外線LED晶片的母體所任意選擇的複數紫外線LED晶片的並聯電路」時,各紫外線LED晶片的電流的差異有時會變大。此種情況下,流往部分紫外線LED晶片的電流變得過大、發生光分布不均、或減短壽命的情況是有的。另一方面,相較於藍色LED,紫外線LED其主波長位置的差異相對較小。且於藍色LED會造成問題的數nm之主波長位置的差,於殺菌或樹脂硬化等紫外線LED的用途中,多半不會造成問題。因此,習知的藍色LED主要以「輸出與主波長位置(=色調)」的觀點進行分類。例如,於文獻(WO2014061513)等可看到以色調進行分類的方法。Moreover, the driving voltage of the ultraviolet LED chip (UV-LED) is higher than that of the blue LED chip. Therefore, in the ultraviolet light-emitting device 1, for example, for use in sterilization, sterilization, or the like, the plurality of ultraviolet light-emitting elements 2 are connected in parallel, and the crucible can be driven by a power source of about 12V or the like. However, compared to the blue LED chip, the ultraviolet LED chip has a large difference in driving voltage per wafer. The driving voltage of the blue LED chip is, for example, about 3.2V to 3.3V. On the other hand, the driving voltage of the ultraviolet LED chip is about 8V to 10V. The driving voltage of the ultraviolet LED chip not only has the in-plane variation of the wafer at the time of manufacture, but also the difference between the wafers, the difference between the batches, and the like. Therefore, when a "parallel circuit of a plurality of ultraviolet LED chips arbitrarily selected from a matrix of an ultraviolet LED chip having a self-driving voltage of 8 V to 10 V is driven" with a constant current, the difference in current of each of the ultraviolet LED chips sometimes becomes large. . In this case, there is a case where the current flowing to a part of the ultraviolet LED chip becomes too large, light distribution is uneven, or life is shortened. On the other hand, the difference in the dominant wavelength position of the ultraviolet LED is relatively small compared to the blue LED. Moreover, the difference in the main wavelength position of several nm which causes a problem in the blue LED does not cause a problem in the use of an ultraviolet LED such as sterilization or resin hardening. Therefore, the conventional blue LED is mainly classified by the viewpoint of "output and main wavelength position (=tone)". For example, a method of classifying by hue can be seen in the literature (WO2014061513) or the like.

相對於此,本申請案發明人等,想出了較習知的分類方法更符合紫外線LED的特性之上述分類矩陣。分類矩陣,係將紫外線LED晶片以「作為電特性的驅動電壓與作為光學特性的光輸出」進行分類的矩陣。所謂「分類」,意指挑選為具有類似的驅動電壓及類似的光輸出之群組。所謂「分類區域」,意指分類矩陣的最小範圍。On the other hand, the inventors of the present application have conceived the above-described classification matrix which is more in conformity with the characteristics of the ultraviolet LED than the conventional classification method. The classification matrix is a matrix in which an ultraviolet LED chip is classified by "a driving voltage as an electrical characteristic and a light output as an optical characteristic". By "classification" is meant a group selected to have similar drive voltages and similar light outputs. The so-called "classification area" means the minimum range of the classification matrix.

分類矩陣的行,將光輸出的大小以光輸出範圍分為三組。分類矩陣中,作為三個光輸出範圍,包含第1、第2及第3光輸出範圍。第1光輸出範圍(OOR1),係1.7mW以上、未達2.0mW的範圍。換言之,第1光輸出範圍的下限(1.7mW),相對於第1光輸出範圍的上限(2.0mW),具有-15%的光輸出差。第2光輸出範圍(OOR2),係高於OOR1,2.0mW以上、未達2.3mW的範圍。換言之,第2光輸出範圍的上限(2.3mW),相對於第2光輸出範圍的下限(2.0mW),具有+15%的光輸出差。第3光輸出範圍(OOR3),係高於OOR2,2.3mW以上、未達2.7mW的範圍。換言之,第3光輸出範圍的上限(2.7mW),相對於第3光輸出範圍的下限(2.3mW),具有約+18%的光輸出差。另一例中,第3光輸出範圍(OOR3),係2.3mW以上、未達2.645mW的範圍。此時,第3光輸出範圍的上限(2.645mW),相對於第3光輸出範圍的下限(2.3mW),具有+15%的光輸出差。The rows of the classification matrix divide the size of the light output into three groups in terms of the light output range. The classification matrix includes the first, second, and third light output ranges as three light output ranges. The first light output range (OOR1) is in the range of 1.7 mW or more and less than 2.0 mW. In other words, the lower limit (1.7 mW) of the first light output range has a light output difference of -15% with respect to the upper limit (2.0 mW) of the first light output range. The second light output range (OOR2) is higher than OOR1, 2.0 mW or more, and less than 2.3 mW. In other words, the upper limit (2.3 mW) of the second light output range has a light output difference of +15% with respect to the lower limit (2.0 mW) of the second light output range. The third light output range (OOR3) is higher than OOR2, 2.3 mW or more, and less than 2.7 mW. In other words, the upper limit (2.7 mW) of the third light output range has a light output difference of about +18% with respect to the lower limit (2.3 mW) of the third light output range. In another example, the third light output range (OOR3) is in the range of 2.3 mW or more and less than 2.645 mW. At this time, the upper limit of the third light output range (2.645 mW) has a light output difference of +15% with respect to the lower limit (2.3 mW) of the third light output range.

分類矩陣的列,將驅動電壓的大小以驅動電壓範圍分為十組。分類矩陣中,作為十個驅動電壓範圍,包含第1、第2、第3、第4、第5、第6、第7、第8、第9及第10驅動電壓範圍。第1驅動電壓範圍(DVR1),係8.0V以上、未達8.2V的範圍。第2驅動電壓範圍(DVR2),係高於DVR1,8.2V以上、未達8.4V的範圍。第3驅動電壓範圍(DVR3),係高於DVR2,8.4V以上、未達8.6V的範圍。第4驅動電壓範圍(DVR4),係高於DVR3,8.6V以上、未達8.8V的範圍。第5驅動電壓範圍(DVR5),係高於DVR4,8.8V以上、未達9.0V的範圍。第6驅動電壓範圍(DVR6),係高於DVR5,9.0V以上、未達9.2V的範圍。第7驅動電壓範圍(DVR7),係高於DVR6,9.2V以上、未達9.4V的範圍。第8驅動電壓範圍(DVR8),係高於DVR7,9.4V以上、未達9.6V的範圍。第9驅動電壓範圍(DVR9),係高於DVR8,9.6V以上、未達9.8V的範圍。第10驅動電壓範圍(DVR10),係高於DVR9,9.8V以上、未達10.0V的範圍。The column of the classification matrix divides the magnitude of the driving voltage into ten groups in the driving voltage range. The classification matrix includes the first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, and tenth driving voltage ranges as ten driving voltage ranges. The first driving voltage range (DVR1) is in the range of 8.0 V or more and less than 8.2 V. The second driving voltage range (DVR2) is higher than DVR1, 8.2V or more, and less than 8.4V. The third driving voltage range (DVR3) is higher than DVR2, 8.4V or more, and less than 8.6V. The fourth driving voltage range (DVR4) is higher than DVR3, 8.6V or more, and less than 8.8V. The fifth driving voltage range (DVR5) is higher than DVR4, 8.8V or more, and less than 9.0V. The sixth driving voltage range (DVR6) is higher than DVR5, 9.0V or higher, and less than 9.2V. The 7th drive voltage range (DVR7) is higher than DVR6, 9.2V or more, and less than 9.4V. The 8th drive voltage range (DVR8) is higher than DVR7, 9.4V or higher, and less than 9.6V. The ninth driving voltage range (DVR9) is higher than DVR8, 9.6V or more, and less than 9.8V. The 10th driving voltage range (DVR10) is higher than DVR9, 9.8V or more, and less than 10.0V.

由上述說明可知,分類矩陣,係3行10列的矩陣,包含30個分類區域X1Y1~X3Y10。在此,關於符號,附有「X」的數字表示行編號,詳細而言,1~3,分別對應第1~第3光輸出範圍。附有「Y」的數字表示列編號,詳細而言,1~10,分別對應第1~第10驅動電壓範圍。As can be seen from the above description, the classification matrix is a matrix of three rows and ten columns, and includes 30 classification regions X1Y1 to X3Y10. Here, the symbol with "X" indicates the line number, and in detail, 1 to 3 correspond to the first to third light output ranges, respectively. The number with "Y" indicates the column number. Specifically, 1 to 10 correspond to the first to tenth driving voltage ranges.

紫外線LED晶片的光輸出,係利用積分球及光譜儀測定的值。更詳細而言,光輸出的值,係在藍寶石板上置放紫外線LED晶片2(紫外線發光元件候選),令兩根探針逐一接觸第1電極25與第2電極26,流入20mA的定電流達30msec時,以積分球收集其光輸出,以光纖取出,以光譜儀測定的值。The light output of the ultraviolet LED chip is a value measured by an integrating sphere and a spectrometer. More specifically, the value of the light output is such that the ultraviolet LED chip 2 (the ultraviolet light emitting element candidate) is placed on the sapphire plate, and the two probes are brought into contact with the first electrode 25 and the second electrode 26 one by one, and a constant current of 20 mA is supplied. At 30 msec, the light output is collected by an integrating sphere and taken out by an optical fiber to determine the value by a spectrometer.

紫外線發光元件2的驅動電壓,係流入20mA的定電流達5msec時的順向壓降(Vf)。The driving voltage of the ultraviolet light-emitting element 2 is a forward voltage drop (Vf) when a constant current of 20 mA reaches 5 msec.

複數驅動電壓範圍中之既定的驅動電壓範圍,係8.8V以上、未達9.0V的範圍(第5驅動電壓範圍)。且複數光輸出範圍之中心的光輸出範圍,係2.0mW以上、未達2.3mW的範圍(第2光輸出範圍)。The predetermined driving voltage range in the complex driving voltage range is 8.8 V or more and less than 9.0 V (the fifth driving voltage range). The light output range at the center of the complex light output range is 2.0 mW or more and less than 2.3 mW (second light output range).

紫外線發光裝置1中複數紫外線發光元件2,僅以分類矩陣中第1分類區域X1Y5的紫外線發光元件2,與第2分類區域X3Y5的紫外線發光元件2構成。In the ultraviolet light-emitting device 1, the plurality of ultraviolet light-emitting elements 2 are composed only of the ultraviolet light-emitting elements 2 of the first classification region X1Y5 in the classification matrix and the ultraviolet light-emitting elements 2 of the second classification region X3Y5.

第1分類區域X1Y5,以下列者限定:複數驅動電壓範圍中之既定的一個驅動電壓範圍;及複數光輸出範圍之中心的光輸出範圍為基準,位在對稱位置的兩個光輸出範圍(1.7mW以上、未達2.0mW的範圍及2.3mW以上、未達2.7mW的範圍)中,光輸出較低的光輸出範圍(1.7mW以上、未達2.0mW的範圍)。表1之例中,第1分類區域X1Y5,以第5驅動電壓範圍及第1光輸出範圍限定。The first classification area X1Y5 is defined by a predetermined driving voltage range in the complex driving voltage range; and a light output range at the center of the complex optical output range as a reference, and two light output ranges in a symmetrical position (1.7) In the range of mW or more, less than 2.0 mW, and 2.3 mW or more and less than 2.7 mW, the light output range of light output is low (1.7 mW or more and less than 2.0 mW). In the example of Table 1, the first classification area X1Y5 is limited by the fifth driving voltage range and the first light output range.

第2分類區域X3Y5,以下列者限定:複數驅動電壓範圍中之上述既定的一個驅動電壓範圍;及複數光輸出範圍之中心的光輸出範圍為基準,位在對稱位置的兩個光輸出範圍(1.7mW以上、未達2.0mW的範圍及2.3mW以上、未達2.7mW的範圍)中,光輸出較高的光輸出範圍(2.3mW以上、未達2.7mW的範圍)。表1之例中,第2分類區域X3Y5,以第5驅動電壓範圍及第3光輸出範圍限定。The second classification area X3Y5 is defined by the above-mentioned predetermined driving voltage range in the complex driving voltage range; and the light output range of the center of the complex optical output range is the reference, and the two light output ranges located at the symmetrical position ( In the range of 1.7 mW or more, less than 2.0 mW, and 2.3 mW or more and less than 2.7 mW, the light output range of light output is high (2.3 mW or more and less than 2.7 mW). In the example of Table 1, the second classification area X3Y5 is limited by the fifth driving voltage range and the third light output range.

如此,根據分類矩陣獲得的紫外線發光裝置1,可抑制流往各紫外線發光元件2的電流的差異。藉此,紫外線發光裝置1,可實現良率的提升,同時實現光輸出的高輸出化及使用壽命增長。藉此,紫外線發光裝置1可實現低成本化,同時實現光輸出的高輸出化及使用壽命增長。As described above, the ultraviolet light-emitting device 1 obtained by the classification matrix can suppress the difference in current flowing to each of the ultraviolet light-emitting elements 2. Thereby, the ultraviolet light-emitting device 1 can achieve an improvement in yield while achieving high output of light output and an increase in service life. Thereby, the ultraviolet light-emitting device 1 can achieve cost reduction while achieving high output of the light output and an increase in the service life.

紫外線發光裝置1,宜例如在一假想圓5的圓周上等間隔地排列複數紫外線發光元件2。藉此,紫外線發光裝置1可抑制光分布不均。In the ultraviolet light-emitting device 1, it is preferable to arrange the plurality of ultraviolet light-emitting elements 2 at equal intervals, for example, on the circumference of an imaginary circle 5. Thereby, the ultraviolet light-emitting device 1 can suppress uneven light distribution.

紫外線發光裝置1中,複數紫外線發光元件2宜為6個紫外線發光元件2。藉此,紫外線發光裝置1,作為複數紫外線發光元件2各光輸出的合計,可獲得12mW以上的光輸出。In the ultraviolet light-emitting device 1, the plurality of ultraviolet light-emitting elements 2 are preferably six ultraviolet light-emitting elements 2. Thereby, the ultraviolet light-emitting device 1 can obtain a light output of 12 mW or more as a total of the respective light outputs of the plurality of ultraviolet light-emitting elements 2.

紫外線發光裝置1中,複數紫外線發光元件2內,具有第1分類區域X1Y5特性的紫外線發光元件2,與具有第2分類區域X3Y5特性的紫外線發光元件2,宜在假想圓5的圓周上交互排列。藉此,紫外線發光裝置1,可抑制複數紫外線發光元件2之溫度的差異,實現光輸出的高輸出化。In the ultraviolet light-emitting device 1, the ultraviolet light-emitting elements 2 having the characteristics of the first classification region X1Y5 in the plurality of ultraviolet light-emitting elements 2 and the ultraviolet light-emitting elements 2 having the characteristics of the second classification region X3Y5 are preferably arranged on the circumference of the virtual circle 5. . Thereby, the ultraviolet light-emitting device 1 can suppress the difference in temperature between the plurality of ultraviolet light-emitting elements 2, and achieve high output of light output.

紫外線發光裝置1中,總光輸出宜至少為10mW。藉此,可更有效地進行除菌、殺菌等。本說明書中,所謂「總光輸出」,意指紫外線發光裝置1,具有例如用來控制紫外線的光分布的透鏡時,通過透鏡出射的紫外線輸出。作為透鏡的材料,採用例如變形點在600℃以下的玻璃。藉此,紫外線發光裝置1中,透鏡可係以成形的方式形成的非球面透鏡。因此,紫外線發光裝置1中,透鏡係非球面透鏡,藉此,相較於其係半球狀的透鏡時,可實現透鏡的薄型化,且可實現光取出效率的提升。且製造紫外線發光裝置1時,可以成形的方式形成透鏡,故相較於以研磨的方式形成時,可提升透鏡的生產力。In the ultraviolet light-emitting device 1, the total light output should be at least 10 mW. Thereby, sterilization, sterilization, and the like can be performed more effectively. In the present specification, the term "total light output" means that the ultraviolet light-emitting device 1 has, for example, a lens for controlling the distribution of light of ultraviolet rays, and outputs ultraviolet light emitted through the lens. As the material of the lens, for example, glass having a deformation point of 600 ° C or less is used. Thereby, in the ultraviolet light-emitting device 1, the lens can be an aspherical lens formed in a formed manner. Therefore, in the ultraviolet light-emitting device 1, the lens is an aspherical lens, whereby the lens can be made thinner and the light extraction efficiency can be improved compared to the case of the hemispherical lens. Further, when the ultraviolet light-emitting device 1 is manufactured, the lens can be formed in a formed manner, so that the productivity of the lens can be improved as compared with the case of being formed by polishing.

作為透鏡的材料之玻璃中,相對於紫外線發光元件2放射的紫外線的透射率宜在70%以上,80%以上尤佳。因此,作為透鏡的材料之玻璃中,採用:滿足變形點在600℃以下,且相對於紫外線發光元件2的發光峰波長之紫外線的透射率為80%條件之硼矽酸玻璃。作為此種硼矽酸玻璃,可採用例如SCHOTT公司製8337B。In the glass which is a material of the lens, the transmittance of ultraviolet rays emitted to the ultraviolet light-emitting element 2 is preferably 70% or more, and more preferably 80% or more. Therefore, among the glasses which are materials of the lens, boron silicate glass which satisfies the condition that the deformation point is 600 ° C or lower and the transmittance of ultraviolet rays with respect to the luminescence peak wavelength of the ultraviolet light-emitting element 2 is 80% is used. As such a borosilicate glass, for example, 8337B manufactured by SCHOTT Co., Ltd. can be used.

紫外線發光裝置1之製造方法中,包含:挑選程序,分別測定紫外線LED晶片2的驅動電壓與光輸出,並分類為分類矩陣;及安裝程序,僅自屬於分類矩陣的第1分類區域(X1Y5)的紫外線發光元件2,與屬於第2分類區域(X3Y5)的紫外線發光元件2,選擇複數紫外線發光元件2,並安裝於安裝基板3。藉此,依紫外線發光裝置1之製造方法,可提供紫外線發光裝置1,其可實現良率的提升,同時實現光輸出的高輸出化及使用壽命增長。The manufacturing method of the ultraviolet light-emitting device 1 includes a selection process for measuring the driving voltage and light output of the ultraviolet LED chip 2, and classifying them into a classification matrix; and an installation program, which belongs only to the first classification area (X1Y5) of the classification matrix. The ultraviolet light-emitting element 2 is selected from the ultraviolet light-emitting element 2 belonging to the second classification region (X3Y5), and the plurality of ultraviolet light-emitting elements 2 are selected and mounted on the mounting substrate 3. Thereby, according to the manufacturing method of the ultraviolet light-emitting device 1, the ultraviolet light-emitting device 1 can be provided, which can achieve an improvement in yield while achieving high output of light output and an increase in service life.

挑選程序中,宜於測定驅動電壓前進行ESD(Electro Static Discharge,靜電放電)耐受性的檢查,僅就未被ESD破壞的紫外線LED晶片測定驅動電壓。且挑選程序中,宜在測定驅動電壓後,測定逆偏壓漏電流,僅就逆偏壓漏電流在限定值以下的紫外線LED晶片將其分類於分類矩陣。又,ESD耐受性的檢查中,例如可根據將相當於ESD突波的高電壓脈衝於第1電極25與第2電極26之間施加時的電流電壓波形,判斷ESD破壞之有無。In the selection procedure, it is preferable to perform ESD (Electro Static Discharge) resistance inspection before measuring the driving voltage, and to measure the driving voltage only on the ultraviolet LED wafer which is not destroyed by ESD. In the selection process, it is preferable to measure the reverse bias current after measuring the driving voltage, and classify the ultraviolet light into the classification matrix only for the ultraviolet LED chip whose reverse bias current is below the limit value. In the ESD tolerance test, for example, the presence or absence of ESD destruction can be determined based on the current-voltage waveform when a high voltage pulse corresponding to the ESD surge is applied between the first electrode 25 and the second electrode 26.

基本構成與圖1相同的變形例(可選擇者)的紫外線發光裝置1,與實施形態的紫外線發光裝置1相同,包含:複數紫外線發光元件2;與安裝有複數紫外線發光元件2的安裝基板3,並聯連接複數紫外線發光元件2。變形例的紫外線發光裝置1中的複數紫外線發光元件2,僅包含:具有「按照複數驅動電壓範圍與複數光輸出範圍分類為複數分類區域的分類矩陣中,複數分類區域內一個分類區域X2Y2特性」的紫外線發光元件2。一個分類區域X2Y2,由下列者限定:複數驅動電壓範圍中之既定的驅動電壓範圍(8.2V以上、未達8.4V的範圍);與複數光輸出範圍之中心的光輸出範圍(2.0mW以上、未達2.3mW的範圍)。如此,變形例的紫外線發光裝置1,可抑制流往複數紫外線發光元件2的電流的差異。藉此,依紫外線發光裝置1可實現光輸出的高輸出化及使用壽命增長。The ultraviolet light-emitting device 1 having basically the same modification (optional) as that of FIG. 1 is the same as the ultraviolet light-emitting device 1 of the embodiment, and includes a plurality of ultraviolet light-emitting elements 2 and a mounting substrate 3 on which the plurality of ultraviolet light-emitting elements 2 are mounted. The plurality of ultraviolet light-emitting elements 2 are connected in parallel. The plurality of ultraviolet light-emitting elements 2 in the ultraviolet light-emitting device 1 according to the modification include only "a classification region X2Y2 characteristic in the complex classification region in the classification matrix classified into a complex classification region according to the complex driving voltage range and the complex optical output range". Ultraviolet light-emitting element 2. A classification area X2Y2 is defined by a predetermined driving voltage range (8.2 V or more and less than 8.4 V) in a complex driving voltage range; and a light output range (2.0 mW or more in the center of a complex optical output range, Not up to 2.3mW). As described above, in the ultraviolet light-emitting device 1 of the modified example, it is possible to suppress the difference in the current flowing through the ultraviolet light-emitting element 2. Thereby, according to the ultraviolet light-emitting device 1, high output of the light output and an increase in the service life can be achieved.

依上述紫外線發光裝置1之製造方法,可分別製造實施形態的紫外線發光裝置1及變形例的紫外線發光裝置1,故可因良率提升實現低成本化。According to the manufacturing method of the ultraviolet light-emitting device 1, the ultraviolet light-emitting device 1 of the embodiment and the ultraviolet light-emitting device 1 of the modified example can be manufactured separately, so that the cost can be improved by the improvement of the yield.

於上述實施形態等說明的圖,係示意圖,各構成要素的大小或比例,未必反映實際的尺寸比。且記載於實施形態的材料、數值等,僅係較佳例,未企圖限定之。The drawings described in the above embodiments and the like are schematic views, and the size or ratio of each component does not necessarily reflect the actual size ratio. The materials, numerical values, and the like described in the embodiments are merely preferred examples and are not intended to be limited.

雖已說明關於應係上述最佳形態及/或其他實施例者,但亦可進行各種改變,本說明書所揭示之主題亦可以各種形態及實施例實施,又,此等者亦可適用於多數的應用,其最佳的數種已記載於本說明書。藉由以下的申請專利範圍,請求包含於本發明之真正的範圍內之任意及所有的修正及變形。Although the above-described best mode and/or other embodiments are described, various changes can be made, and the subject matter disclosed in the present specification can also be implemented in various forms and embodiments, and these can also be applied to most The application of the best of these has been described in this specification. Any and all modifications and variations are intended to be included within the true scope of the invention.

例如,依本發明之一實施形態的紫外線發光裝置,包含:複數紫外線發光元件2;與安裝有複數紫外線發光元件2的安裝基板3。複數紫外線發光元件2,相互並聯連接。 (a)複數紫外線發光元件2,分別具有:具有0.2V電壓差的驅動電壓範圍內的驅動電壓;與光輸出範圍內的光輸出,該光輸出範圍的上限,相對於該光輸出範圍的下限,具有+15%的光輸出差,或是, (b)複數紫外線發光元件2的一部分,僅包含複數第1紫外線發光元件2,另一方面,複數紫外線發光元件2的剩下部分,僅包含複數第2紫外線發光元件2,交互配置複數第1紫外線發光元件2與複數第2紫外線發光元件2。在此,複數第1紫外線發光元件2及複數第2紫外線發光元件2,分別具有具有0.2V電壓差的驅動電壓範圍內的驅動電壓。複數第1紫外線發光元件2,分別具有第1光輸出範圍,其低於第2光輸出範圍。第1光輸出範圍的下限,相對於第1光輸出範圍的上限,具有-15%的光輸出差。第2光輸出範圍的上限,相對於第2光輸出範圍的下限,具有+15%的光輸出差。複數第2紫外線發光元件2,分別具有高於第2光輸出範圍的第3光輸出範圍內的光輸出。第3光輸出範圍的上限,相對於第3光輸出範圍的下限,具有+15至18%的範圍內的光輸出差。For example, an ultraviolet light-emitting device according to an embodiment of the present invention includes a plurality of ultraviolet light-emitting elements 2 and a mounting substrate 3 on which a plurality of ultraviolet light-emitting elements 2 are mounted. The plurality of ultraviolet light-emitting elements 2 are connected in parallel to each other. (a) The plurality of ultraviolet light-emitting elements 2 each having a drive voltage in a drive voltage range having a voltage difference of 0.2 V; and an optical output in a light output range, an upper limit of the light output range, with respect to a lower limit of the light output range Having a light output difference of +15%, or (b) a part of the plurality of ultraviolet light-emitting elements 2, including only the plurality of first ultraviolet light-emitting elements 2, and the remaining portions of the plurality of ultraviolet light-emitting elements 2 include only plural In the second ultraviolet light-emitting element 2, the plurality of first ultraviolet light-emitting elements 2 and the plurality of second ultraviolet light-emitting elements 2 are alternately arranged. Here, each of the plurality of first ultraviolet light-emitting elements 2 and the plurality of second ultraviolet light-emitting elements 2 has a drive voltage in a drive voltage range having a voltage difference of 0.2 V. Each of the plurality of first ultraviolet light-emitting elements 2 has a first light output range, which is lower than the second light output range. The lower limit of the first light output range has a light output difference of -15% with respect to the upper limit of the first light output range. The upper limit of the second light output range has a light output difference of +15% with respect to the lower limit of the second light output range. Each of the plurality of second ultraviolet light-emitting elements 2 has a light output in a third light output range higher than the second light output range. The upper limit of the third light output range has a light output difference in the range of +15 to 18% with respect to the lower limit of the third light output range.

上述(a)的驅動電壓範圍,係例如8.2V以上、未達8.4V的範圍,上述(a)的光輸出範圍,係例如2.0mW以上、未達2.3mW的範圍。上述(b)的驅動電壓範圍,係例如8.8V以上、未達9.0V的範圍。上述(b)的第2光輸出範圍,係例如2.0mW以上、未達2.3mW的範圍。第1光輸出範圍,係例如1.7mW以上、未達2.0mW的範圍,第3光輸出範圍,係2.3mW以上、未達2.7mW的範圍。The driving voltage range of the above (a) is, for example, 8.2 V or more and less than 8.4 V, and the light output range of the above (a) is, for example, 2.0 mW or more and less than 2.3 mW. The driving voltage range of the above (b) is, for example, 8.8 V or more and less than 9.0 V. The second light output range of the above (b) is, for example, 2.0 mW or more and less than 2.3 mW. The first light output range is, for example, 1.7 mW or more and less than 2.0 mW, and the third light output range is 2.3 mW or more and less than 2.7 mW.

特別是,(b)的情形下,可抑制異常光分布的發生。圖5顯示將具有各種驅動電壓的6個紫外線發光元件並聯連接的電路之模擬結果。圖5中,紫外線發光元件之相對於驅動電壓的電流實測值,以圓、三角及菱形等記號表示,虛線,係以此等實測值為基礎製作的模擬用近似曲線。詳細而言,圖5,包含具有低Vf(8.3V)的LED的特性曲線及具有高Vf(9V)的特性曲線等。自此模擬可知,將10V附近的驅動電壓(動作電壓)的紫外線發光元件並聯連接時,於驅動電壓若有0.2V的差,於電流值即會產生30%以上的差。如此,發生30%的光輸出差的話,如圖6所示,於光分布特性即可觀察到異常。因此,需抑制異常光分布。上述(b)的紫外線發光裝置中,即便使用光輸出所屬的範圍相互不同的複數第1紫外線發光元件2與複數第2紫外線發光元件2,亦可藉由交互配置複數第1紫外線發光元件2與複數第2紫外線發光元件2,而抑制如圖6所示的異常光分布。複數第1紫外線發光元件2的數量,亦可與複數第2紫外線發光元件2的數量不同。惟,考慮到光輸出×晶片中心位置的向量,宜配置第1及第2紫外線發光元件,俾其重心位置不變動。且光輸出與電流值呈比例,故為抑制光輸出差,各DVR1~DVR10(電壓範圍),宜在0.2V以內。圖6中,“001X”,顯示圖1所示的一個(第1)紫外線發光元件(圖1中係例如右端),係具有低於對應的光輸出範圍的光輸出之異常品時的光分布特性。又,“002X”~“004X”,顯示正常品的光分布特性。In particular, in the case of (b), the occurrence of an abnormal light distribution can be suppressed. Fig. 5 shows simulation results of a circuit in which six ultraviolet light-emitting elements having various driving voltages are connected in parallel. In Fig. 5, the measured values of the current of the ultraviolet light-emitting element with respect to the driving voltage are indicated by symbols such as circles, triangles, and diamonds, and the broken lines are approximate curves for simulation based on the measured values. In detail, FIG. 5 includes a characteristic curve of an LED having a low Vf (8.3 V), a characteristic curve having a high Vf (9 V), and the like. As can be seen from the simulation, when the ultraviolet light-emitting elements of the driving voltage (operating voltage) in the vicinity of 10 V are connected in parallel, if the driving voltage has a difference of 0.2 V, a difference of 30% or more occurs in the current value. Thus, when a light output difference of 30% occurs, as shown in FIG. 6, an abnormality can be observed in the light distribution characteristics. Therefore, it is necessary to suppress the abnormal light distribution. In the ultraviolet light-emitting device of the above (b), even if the plurality of first ultraviolet light-emitting elements 2 and the plurality of second ultraviolet light-emitting elements 2 having different light output ranges are used, the plurality of first ultraviolet light-emitting elements 2 and the plurality of first ultraviolet light-emitting elements 2 can be alternately arranged. The second ultraviolet light-emitting element 2 is plural, and the abnormal light distribution as shown in FIG. 6 is suppressed. The number of the plurality of first ultraviolet light-emitting elements 2 may be different from the number of the second ultraviolet light-emitting elements 2. However, in consideration of the light output x the vector of the center position of the wafer, it is preferable to arrange the first and second ultraviolet light-emitting elements so that the position of the center of gravity does not change. Moreover, the light output is proportional to the current value, so to suppress the light output difference, each DVR1 to DVR10 (voltage range) should be within 0.2V. In Fig. 6, "001X" shows one (first) ultraviolet light-emitting element (for example, the right end in Fig. 1) shown in Fig. 1, and is a light distribution when an abnormal product having a light output lower than the corresponding light output range is displayed. characteristic. Further, "002X" to "004X" display the light distribution characteristics of a normal product.

1‧‧‧紫外線發光裝置
2‧‧‧紫外線發光元件
3‧‧‧安裝基板
4‧‧‧配線基板
5‧‧‧假想圓
1‧‧‧UV illuminating device
2‧‧‧UV light-emitting elements
3‧‧‧Installation substrate
4‧‧‧Wiring substrate
5‧‧‧ imaginary circle

圖式雖依本發明揭示一或複數實施例,但不因此限定本發明,其只不過是例子。圖式中,同樣的符號係指相同或類似的要素。 圖1係實施形態的紫外線發光裝置的概略俯視圖。 圖2例示依實施形態的各紫外線發光元件的剖面。 圖3顯示依實施形態的紫外線發光元件與安裝基板的連接例。 圖4顯示依實施形態,安裝基板搭載於配線基板的搭載例。 圖5係用來說明實施形態的效果圖。 圖6係顯示於圖1的複數紫外線發光元件中,包含具有不合分類矩陣的特性的紫外線發光元件時的光分布特性圖。The drawings illustrate one or more embodiments, but are not intended to limit the invention, and are merely illustrative. In the drawings, the same symbols refer to the same or similar elements. Fig. 1 is a schematic plan view of an ultraviolet light-emitting device of an embodiment. Fig. 2 is a cross-sectional view showing each of the ultraviolet light-emitting elements according to the embodiment. Fig. 3 shows an example of connection between the ultraviolet light-emitting element and the mounting substrate according to the embodiment. FIG. 4 shows an example of mounting in which the mounting substrate is mounted on the wiring substrate according to the embodiment. Fig. 5 is a view for explaining an effect of the embodiment. Fig. 6 is a view showing a light distribution characteristic diagram when the ultraviolet light-emitting element having the characteristics of the classification matrix is included in the plurality of ultraviolet light-emitting elements of Fig. 1.

1‧‧‧紫外線發光裝置 1‧‧‧UV illuminating device

2‧‧‧紫外線發光元件 2‧‧‧UV light-emitting elements

3‧‧‧安裝基板 3‧‧‧Installation substrate

4‧‧‧配線基板 4‧‧‧Wiring substrate

5‧‧‧假想圓 5‧‧‧ imaginary circle

Claims (10)

一種紫外線發光裝置的製造方法, 該紫外線發光裝置,包含:複數紫外線發光元件;及安裝基板,該複數紫外線發光元件並聯連接而安裝於其上, 該紫外線發光裝置的製造方法包含以下程序: 挑選程序,分別測定該複數紫外線發光元件的驅動電壓與光輸出,而分類於「按照複數驅動電壓範圍與複數光輸出範圍分類為複數分類區域的分類矩陣」;及 安裝程序,僅自屬於該分類矩陣的第1分類區域的紫外線發光元件,與屬於該分類矩陣的第2分類區域的紫外線發光元件,選擇複數紫外線發光元件,而安裝於該安裝基板;且 該第1分類區域,由下列者限定: 該複數驅動電壓範圍中之既定的一個驅動電壓範圍;與該複數光輸出範圍之中心的光輸出範圍為基準,位在對稱位置的兩個光輸出範圍中,光輸出較低的光輸出範圍; 該第2分類區域,由下列者限定: 該既定的一個驅動電壓範圍;與該兩個光輸出範圍中,光輸出較高的光輸出範圍。A method of manufacturing an ultraviolet light-emitting device comprising: a plurality of ultraviolet light-emitting elements; and a mounting substrate, wherein the plurality of ultraviolet light-emitting elements are connected in parallel and mounted thereon, the method of manufacturing the ultraviolet light-emitting device comprising the following program: Measuring the driving voltage and the light output of the plurality of ultraviolet light-emitting elements, respectively, and classifying them into a "classification matrix classified into a plurality of classification regions according to a complex driving voltage range and a complex optical output range"; and an installation program belonging only to the classification matrix The ultraviolet light-emitting element of the first classification region and the ultraviolet light-emitting element of the second classification region belonging to the classification matrix are selected from the plurality of ultraviolet light-emitting elements and mounted on the mounting substrate; and the first classification region is limited by the following: a predetermined driving voltage range in the complex driving voltage range; a light output range at the center of the complex optical output range as a reference, a light output range in which the light output is lower in the two light output ranges in the symmetrical position; The second classification area is limited by the following: A predetermined driving voltage range; range with the two light output, the light output of high light output range. 如申請專利範圍第1項之紫外線發光裝置的製造方法,其中 該安裝基板,以矽基板形成。A method of manufacturing an ultraviolet light-emitting device according to claim 1, wherein the mounting substrate is formed of a germanium substrate. 如申請專利範圍第1或2項之紫外線發光裝置的製造方法,其中 在一假想圓的圓周上等間隔地排列該複數紫外線發光元件。A method of producing an ultraviolet light-emitting device according to claim 1 or 2, wherein the plurality of ultraviolet light-emitting elements are arranged at equal intervals on a circumference of an imaginary circle. 如申請專利範圍第3項之紫外線發光裝置的製造方法,其中 該複數紫外線發光元件的數目為6個。A method of producing an ultraviolet light-emitting device according to claim 3, wherein the number of the plurality of ultraviolet light-emitting elements is six. 如申請專利範圍第4項之紫外線發光裝置的製造方法,其中 該複數紫外線發光元件中,具有該第1分類區域的特性的紫外線發光元件,與具有該第2分類區域的特性的紫外線發光元件,在該假想圓的圓周上交互排列。The method for producing an ultraviolet light-emitting device according to the fourth aspect of the invention, wherein the ultraviolet light-emitting device having the characteristics of the first classification region and the ultraviolet light-emitting device having the characteristics of the second classification region; Interleaved on the circumference of the imaginary circle. 如申請專利範圍第1至5項中任一項之紫外線發光裝置的製造方法,其中 總光輸出至少為10mW。The method of producing an ultraviolet light-emitting device according to any one of claims 1 to 5, wherein the total light output is at least 10 mW. 如申請專利範圍第1至6項中任一項之紫外線發光裝置的製造方法,其中該紫外線發光裝置更包含:配線基板,係金屬基底印刷配線板,其上安裝有該安裝基板。The method of manufacturing an ultraviolet light-emitting device according to any one of claims 1 to 6, wherein the ultraviolet light-emitting device further comprises: a wiring substrate; a metal base printed wiring board on which the mounting substrate is mounted. 一種紫外線發光裝置的製造方法, 該紫外線發光裝置,包含:複數紫外線發光元件;及安裝基板,該複數紫外線發光元件並聯連接而安裝於其上, 該紫外線發光裝置的製造方法包含以下程序: 挑選程序,分別測定該複數紫外線發光元件的驅動電壓與光輸出,而分類於「按照複數驅動電壓範圍與複數光輸出範圍分類為複數分類區域的分類矩陣」;及 安裝程序,僅自屬於該分類矩陣的一個分類區域的紫外線發光元件選擇複數紫外線發光元件,將其安裝於該安裝基板;且 該一個分類區域,由下列者限定: 該複數驅動電壓範圍中之既定的驅動電壓範圍;與該複數光輸出範圍之中心的光輸出範圍。A method of manufacturing an ultraviolet light-emitting device comprising: a plurality of ultraviolet light-emitting elements; and a mounting substrate, wherein the plurality of ultraviolet light-emitting elements are connected in parallel and mounted thereon, the method of manufacturing the ultraviolet light-emitting device comprising the following program: Measuring the driving voltage and the light output of the plurality of ultraviolet light-emitting elements, respectively, and classifying them into a "classification matrix classified into a plurality of classification regions according to a complex driving voltage range and a complex optical output range"; and an installation program belonging only to the classification matrix The ultraviolet light-emitting element of one sorting region selects a plurality of ultraviolet light-emitting elements and mounts the plurality of ultraviolet light-emitting elements on the mounting substrate; and the one sorting region is defined by: a predetermined driving voltage range in the complex driving voltage range; and the complex light output The range of light output at the center of the range. 如申請專利範圍第1或8項之紫外線發光裝置的製造方法,其中 該分類矩陣中該複數驅動電壓範圍,係相互不同的複數範圍,該複數範圍,分別係0.2V的範圍, 該分類矩陣中該複數光輸出範圍,係第1光輸出範圍、高於該第1光輸出範圍的第2光輸出範圍、及高於該第2光輸出範圍的第3光輸出範圍, 該第1光輸出範圍的下限,相對於該第1光輸出範圍的上限,具有-15%的光輸出差, 該第2光輸出範圍的上限,相對於該第2光輸出範圍的下限,具有+15%的光輸出差, 該第3光輸出範圍的上限,相對於該第3光輸出範圍的下限,具有+15至18%的範圍內的光輸出差。The method for manufacturing an ultraviolet light-emitting device according to claim 1 or 8, wherein the complex driving voltage range in the classification matrix is a complex range different from each other, and the complex range is a range of 0.2 V, respectively, in the classification matrix. The plurality of light output ranges are a first light output range, a second light output range higher than the first light output range, and a third light output range higher than the second light output range, the first light output range The lower limit has a light output difference of -15% with respect to the upper limit of the first light output range, and the upper limit of the second light output range has a light output difference of +15% with respect to the lower limit of the second light output range. The upper limit of the third light output range has a light output difference in the range of +15 to 18% with respect to the lower limit of the third light output range. 如申請專利範圍第1或8項之紫外線發光裝置的製造方法,其中 該分類矩陣中該複數驅動電壓範圍,包含:8.0V以上、未達8.2V的範圍、8.2V以上、未達8.4V的範圍、8.4V以上、未達8.6V的範圍、8.6V以上、未達8.8V的範圍、8.8V以上、未達9.0V的範圍、9.0V以上、未達9.2V的範圍、9.2V以上、未達9.4V的範圍、9.4V以上、未達9.6V的範圍、9.6V以上、未達9.8V的範圍、9.8V以上、未達10.0V的範圍, 該分類矩陣中該複數光輸出範圍,包含:1.7mW以上、未達2.0mW的範圍、2.0mW以上、未達2.3mW的範圍、2.3mW以上、未達2.7mW或2.645mW的範圍。The method for manufacturing an ultraviolet light-emitting device according to claim 1 or 8, wherein the complex driving voltage range in the classification matrix comprises: 8.0 V or more, less than 8.2 V, 8.2 V or more, and less than 8.4 V. The range is 8.4V or more, less than 8.6V, 8.6V or more, less than 8.8V, 8.8V or more, less than 9.0V, 9.0V or more, less than 9.2V, and 9.2V or more. Not exceeding the range of 9.4V, 9.4V or more, less than 9.6V, 9.6V or more, less than 9.8V, 9.8V or more, and less than 10.0V, the complex optical output range in the classification matrix, The range includes: 1.7 mW or more, less than 2.0 mW, 2.0 mW or more, less than 2.3 mW, 2.3 mW or more, and less than 2.7 mW or 2.645 mW.
TW104107135A 2014-03-06 2015-03-06 Ultraviolet light emitting device TW201546916A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014044202 2014-03-06

Publications (1)

Publication Number Publication Date
TW201546916A true TW201546916A (en) 2015-12-16

Family

ID=54054963

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104107135A TW201546916A (en) 2014-03-06 2015-03-06 Ultraviolet light emitting device

Country Status (3)

Country Link
JP (1) JP6183762B2 (en)
TW (1) TW201546916A (en)
WO (1) WO2015133150A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169123B2 (en) 1997-01-22 2007-01-30 Advanced Medical Optics, Inc. Control of pulse duty cycle based upon footswitch displacement
US7316664B2 (en) 2002-10-21 2008-01-08 Advanced Medical Optics, Inc. Modulated pulsed ultrasonic power delivery system and method
EP2604235A1 (en) 2003-03-12 2013-06-19 Abbott Medical Optics Inc. System and method for pulsed ultrasonic power delivery employing cavitation effects
US10555388B2 (en) * 2015-12-23 2020-02-04 Koninklijke Philips N.V. Load arrangement and electrical power arrangement for powering a load
JP6692646B2 (en) * 2016-01-19 2020-05-13 スタンレー電気株式会社 Semiconductor light emitting device and quality control method for wafer including the device structure
US11877953B2 (en) 2019-12-26 2024-01-23 Johnson & Johnson Surgical Vision, Inc. Phacoemulsification apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192797A (en) * 2007-02-05 2008-08-21 Sony Corp Light source module, manufacturing method therefor, light source device and liquid crystal display
JP5351624B2 (en) * 2009-06-10 2013-11-27 パナソニック株式会社 LED module
JP2012227397A (en) * 2011-04-20 2012-11-15 Sharp Corp Light source manufacturing method and light source
JP5963524B2 (en) * 2012-04-27 2016-08-03 三菱電機株式会社 LED selection device, LED selection program, and LED selection method

Also Published As

Publication number Publication date
JP6183762B2 (en) 2017-08-23
JPWO2015133150A1 (en) 2017-04-06
WO2015133150A1 (en) 2015-09-11

Similar Documents

Publication Publication Date Title
JP6183762B2 (en) Method for manufacturing ultraviolet light emitting device
JP4160881B2 (en) Semiconductor light emitting device, light emitting module, lighting device, and method for manufacturing semiconductor light emitting device
TWI387136B (en) Semiconductor and method for forming the same and flip-chip light emitting diode package structure
US9012932B2 (en) White LED assembly with LED string and intermediate node substrate terminals
TWI533474B (en) Optoelectronic device
US10629570B2 (en) Light emitting module
TWI459602B (en) Led package
JP2013033905A (en) Light emitting device package and lighting system including the same
WO2012042962A1 (en) Light-emitting apparatus and method of manufacturing light-emitting apparatus
TW201635599A (en) Light-emitting device
CN107017322A (en) Luminescence component
EP3125311B1 (en) Light emitting element and light emitting device having the same
JP3476611B2 (en) Multicolor light emitting device and display device using the same
KR101248553B1 (en) Light emitting device
JP2005064412A (en) Block hybrid light emitting device and illumination light source using the same
TWI797140B (en) Light emitting device with extendable and flexible carrier
TWI632695B (en) Lighting elements
TW201013976A (en) Light emitting diode chip
TW201304198A (en) Light-emitting diode package structure
TW201628214A (en) LED die
CN112420906B (en) Light emitting device, method of manufacturing the same, and display module
JP2017022163A (en) Light-emitting device and manufacturing method of the same
TW201434179A (en) Light-emitting device and method for bonding light-emitting diode thereof
JP2023093689A (en) Method for manufacturing light-emitting device
JP2012169403A (en) Unidirectional anti-fuse element and light-emitting diode unit using it