JPWO2015133150A1 - Method for manufacturing ultraviolet light emitting device - Google Patents

Method for manufacturing ultraviolet light emitting device Download PDF

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JPWO2015133150A1
JPWO2015133150A1 JP2016506148A JP2016506148A JPWO2015133150A1 JP WO2015133150 A1 JPWO2015133150 A1 JP WO2015133150A1 JP 2016506148 A JP2016506148 A JP 2016506148A JP 2016506148 A JP2016506148 A JP 2016506148A JP WO2015133150 A1 JPWO2015133150 A1 JP WO2015133150A1
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light emitting
ultraviolet light
light output
range
emitting elements
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JP6183762B2 (en
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村井 章彦
章彦 村井
真太郎 林
真太郎 林
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Panasonic Intellectual Property Management Co Ltd
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Abstract

紫外線発光装置の製造方法は、複数個の紫外線発光素子の駆動電圧と光出力とをそれぞれ測定して、複数の駆動電圧範囲と複数の光出力範囲とに従って複数の分類領域に分類した分類マトリックスに分類すること、分類マトリックスの第1の分類領域に属する紫外線発光素子と、分類マトリックスの第2の分類領域に属する紫外線発光素子と、のみから複数個の紫外線発光素子を選択して、実装基板に実装することを含む。第1の分類領域は、複数の駆動電圧範囲における所定の1つの駆動電圧範囲と、複数の光出力範囲における中心の光出力範囲を基準として対称の位置にある2つの光出力範囲のうち光出力の低い光出力範囲と、で規定されている。第2の分類領域は、所定の1つの駆動電圧範囲と、2つの光出力範囲のうち光出力の高い光出力範囲と、で規定されている。The manufacturing method of the ultraviolet light emitting device measures the driving voltage and light output of a plurality of ultraviolet light emitting elements, respectively, and classifies the classification matrix into a plurality of classification regions according to a plurality of driving voltage ranges and a plurality of light output ranges. A plurality of ultraviolet light emitting elements are selected from only the ultraviolet light emitting elements belonging to the first classification area of the classification matrix and the ultraviolet light emitting elements belonging to the second classification area of the classification matrix, and the mounting substrate is selected. Including implementation. The first classification region is a light output of two light output ranges that are symmetrical with respect to a predetermined drive voltage range in the plurality of drive voltage ranges and a central light output range in the plurality of light output ranges. And a low light output range. The second classification region is defined by a predetermined one drive voltage range and a light output range having a high light output out of the two light output ranges.

Description

本発明は、紫外線発光装置に関し、より詳細には複数個の紫外線発光素子を備えた紫外線発光装置に関する。  The present invention relates to an ultraviolet light emitting device, and more particularly to an ultraviolet light emitting device including a plurality of ultraviolet light emitting elements.

従来、発光装置としては、複数のLEDチップが直列接続された直列回路を有するLED発光装置が提案されている(日本国特許出願公開番号2011−228602(以下「文献1」という)。文献1には、LEDチップとして、GaN系青色発光ダイオードが記載されている。  Conventionally, as a light emitting device, an LED light emitting device having a series circuit in which a plurality of LED chips are connected in series has been proposed (Japanese Patent Application Publication No. 2011-228602 (hereinafter referred to as “Reference 1”). Describes a GaN-based blue light emitting diode as an LED chip.

ところで、発光装置の一種である紫外線発光装置の分野においては、光出力の高出力化及び長寿命化が望まれている。  By the way, in the field of ultraviolet light emitting devices, which are a kind of light emitting device, it is desired to increase the output of light and extend the life.

本発明は上記事由に鑑みて為されたものであり、その目的は、光出力の高出力化及び長寿命化を図ることが可能な紫外線発光装置を提供することにある。  The present invention has been made in view of the above-described reasons, and an object of the present invention is to provide an ultraviolet light-emitting device capable of achieving high output and long life of light output.

本発明の紫外線発光装置は、複数個の紫外線発光素子と、前記複数個の紫外線発光素子が実装された実装基板と、を備える。本発明の紫外線発光装置は、前記複数個の紫外線発光素子が並列接続されている。前記複数個の紫外線発光素子は、複数の駆動電圧範囲と複数の光出力範囲とに従って複数の分類領域に分類した分類マトリックスにおいて、前記複数の分類領域のうち第1の分類領域の特性を有する紫外線発光素子と、前記複数の分類領域のうち第2の分類領域の特性を有する紫外線発光素子と、のみを含む。前記第1の分類領域は、前記複数の駆動電圧範囲における所定の1つの駆動電圧範囲と、前記複数の光出力範囲における中心の光出力範囲を基準として対称の位置にある2つの光出力範囲のうち光出力の低い光出力範囲と、で規定されている。前記第2の分類領域は、前記所定の1つの駆動電圧範囲と、前記2つの光出力範囲のうち光出力の高い光出力範囲と、で規定されている。  An ultraviolet light emitting device of the present invention includes a plurality of ultraviolet light emitting elements and a mounting substrate on which the plurality of ultraviolet light emitting elements are mounted. In the ultraviolet light emitting device of the present invention, the plurality of ultraviolet light emitting elements are connected in parallel. The plurality of ultraviolet light emitting elements are classified into a plurality of classification regions according to a plurality of driving voltage ranges and a plurality of light output ranges, and ultraviolet rays having characteristics of a first classification region among the plurality of classification regions. Only the light emitting element and the ultraviolet light emitting element having the characteristics of the second classification region among the plurality of classification regions are included. The first classification region includes two light output ranges that are symmetrical with respect to a predetermined drive voltage range in the plurality of drive voltage ranges and a central light output range in the plurality of light output ranges. Of these, the light output range is low. The second classification region is defined by the predetermined one drive voltage range and a light output range having a high light output out of the two light output ranges.

本発明の紫外線発光装置は、複数個の紫外線発光素子と、前記複数個の紫外線発光素子が実装された実装基板と、を備える。本発明の紫外線発光装置は、前記複数個の紫外線発光素子が並列接続されている。前記複数個の紫外線発光素子は、複数の駆動電圧範囲と複数の光出力範囲とに従って複数の分類領域に分類した分類マトリックスにおいて、前記複数の分類領域のうち1つの分類領域の特性を有する紫外線発光素子のみを含む。前記1つの分類領域は、前記複数の駆動電圧範囲における所定の駆動電圧範囲と、前記複数の光出力範囲における中心の光出力範囲とで、規定されている。  An ultraviolet light emitting device of the present invention includes a plurality of ultraviolet light emitting elements and a mounting substrate on which the plurality of ultraviolet light emitting elements are mounted. In the ultraviolet light emitting device of the present invention, the plurality of ultraviolet light emitting elements are connected in parallel. The plurality of ultraviolet light emitting elements may emit ultraviolet light having characteristics of one of the plurality of classification regions in a classification matrix classified into a plurality of classification regions according to a plurality of driving voltage ranges and a plurality of light output ranges. Includes only elements. The one classification region is defined by a predetermined drive voltage range in the plurality of drive voltage ranges and a central light output range in the plurality of light output ranges.

本発明の紫外線発光装置においては、光出力の高出力化及び長寿命化を図ることが可能となる。  In the ultraviolet light emitting device of the present invention, it is possible to increase the optical output and extend the life.

図面は本教示に従って一又は複数の実施例を示すが、限定するものではなく例に過ぎない。図面において、同様の符号は同じか類似の要素を指す。
図1は、実施形態の紫外線発光装置の概略平面図である。 図2は、実施形態における各紫外線発光素子の断面を例示する。 図3は、実施形態における紫外線発光素子と実装基板との接続例を示す。 図4は、実施形態における、配線基板への実装基板の搭載例を示す。 図5は、実施形態の効果を説明するための図である。 図6は、図1の複数個の紫外線発光素子に、分類マトリックスから外れる特性を持つ紫外線発光素子が含まれる場合の配光特性を示す図である。
The drawings illustrate one or more embodiments in accordance with the present teachings, but are by way of example and not limitation. In the drawings, like numerals refer to the same or similar elements.
FIG. 1 is a schematic plan view of the ultraviolet light emitting device of the embodiment. FIG. 2 illustrates a cross section of each ultraviolet light emitting element in the embodiment. FIG. 3 shows a connection example between the ultraviolet light emitting element and the mounting substrate in the embodiment. FIG. 4 shows an example of mounting the mounting board on the wiring board in the embodiment. FIG. 5 is a diagram for explaining the effect of the embodiment. FIG. 6 is a diagram showing light distribution characteristics when a plurality of ultraviolet light emitting elements in FIG. 1 includes ultraviolet light emitting elements having characteristics that deviate from the classification matrix.

以下では、本実施形態の紫外線発光装置1について、図1から4に基づいて説明する。また、表1に、分類マトリックスの一例を示す。なお、分類マトリックスの各要素については後述する。  Below, the ultraviolet light-emitting device 1 of this embodiment is demonstrated based on FIGS. Table 1 shows an example of the classification matrix. Each element of the classification matrix will be described later.

Figure 2015133150
Figure 2015133150

図1の例に示すように、紫外線発光装置1は、複数個の紫外線発光素子2と、複数個の紫外線発光素子2が実装された実装基板3と、を備える。紫外線発光装置1は、複数個の紫外線発光素子2が並列接続されている。表1の例に示すように、オプション(一例)として、複数個の紫外線発光素子2は、複数の駆動電圧範囲と複数の光出力範囲とに従って複数の分類領域X1Y1〜X3Y10に分類した分類マトリックスにおいて、複数の分類領域X1Y1〜X3Y10のうち第1の分類領域X1Y5の特性を有する紫外線発光素子2と、複数の分類領域X1Y1〜X3Y10のうち第2の分類領域X3Y5の特性を有する紫外線発光素子2と、のみを含む。第1の分類領域X1Y5は、複数の駆動電圧範囲における所定の1つの駆動電圧範囲と、複数の光出力範囲における中心の光出力範囲を基準として対称の位置にある2つの光出力範囲のうち光出力の低い光出力範囲と、で規定されている。第2の分類領域X3Y5は、複数の駆動電圧範囲における所定の1つの駆動電圧範囲と、2つの光出力範囲のうち光出力の高い光出力範囲と、で規定されている。よって、紫外線発光装置1は、複数個の紫外線発光素子2が、第1の分類領域X1Y5の紫外線発光素子2と、第2の分類領域X3Y5の紫外線発光素子2と、のみを含んでいるので、各紫外線発光素子2に流れる電流のばらつきを抑制することが可能となる。これにより、紫外線発光装置1においては、光出力の高出力化及び長寿命化を図ることが可能となる。  As shown in the example of FIG. 1, the ultraviolet light emitting device 1 includes a plurality of ultraviolet light emitting elements 2 and a mounting substrate 3 on which the plurality of ultraviolet light emitting elements 2 are mounted. In the ultraviolet light emitting device 1, a plurality of ultraviolet light emitting elements 2 are connected in parallel. As shown in the example of Table 1, as an option (one example), a plurality of ultraviolet light emitting elements 2 are classified into a plurality of classification regions X1Y1 to X3Y10 according to a plurality of driving voltage ranges and a plurality of light output ranges. The ultraviolet light emitting element 2 having the characteristics of the first classification area X1Y5 among the plurality of classification areas X1Y1 to X3Y10, and the ultraviolet light emitting element 2 having the characteristics of the second classification area X3Y5 among the plurality of classification areas X1Y1 to X3Y10, , Including only. The first classification region X1Y5 includes a predetermined one drive voltage range in a plurality of drive voltage ranges and a light out of two light output ranges that are symmetric with respect to a central light output range in the plurality of light output ranges. The light output range is low. The second classification region X3Y5 is defined by a predetermined one drive voltage range in a plurality of drive voltage ranges and a light output range having a high light output out of the two light output ranges. Therefore, in the ultraviolet light emitting device 1, the plurality of ultraviolet light emitting elements 2 includes only the ultraviolet light emitting elements 2 in the first classification region X1Y5 and the ultraviolet light emitting elements 2 in the second classification region X3Y5. It is possible to suppress variation in the current flowing through each ultraviolet light emitting element 2. Thereby, in the ultraviolet light-emitting device 1, it becomes possible to achieve high output of light output and long life.

紫外線発光装置1は、実装基板3が実装される配線基板4を備えていてもよい。この場合、実装基板3は、複数個の紫外線発光素子2と配線基板4とを中継するためのインタポーザを構成する。「複数個の紫外線発光素子2と配線基板4とを中継する」とは、複数個の紫外線発光素子2と配線基板4とを電気的に接続する概念を含む。  The ultraviolet light emitting device 1 may include a wiring board 4 on which the mounting board 3 is mounted. In this case, the mounting substrate 3 constitutes an interposer for relaying the plurality of ultraviolet light emitting elements 2 and the wiring substrate 4. “Relaying the plurality of ultraviolet light emitting elements 2 and the wiring board 4” includes a concept of electrically connecting the plurality of ultraviolet light emitting elements 2 and the wiring board 4.

紫外線発光装置1の各構成要素については、以下に、詳細に説明する。  Each component of the ultraviolet light emitting device 1 will be described in detail below.

紫外線発光素子2は、紫外線LEDチップ(以下、「UV−LED」ともいう。)により構成されている。  The ultraviolet light emitting element 2 is composed of an ultraviolet LED chip (hereinafter also referred to as “UV-LED”).

図2の例に示すように、UV−LED2は、基板20を備え、基板の第1面側(図2の例では上面側)において、第1面に近い側から順に、バッファ層21、第1導電型半導体層22、発光層23、第2導電型半導体層24が形成されている。図2は多層構造を示すが、UV−LED2は、例えばメサ構造を有している。メサ構造は、多層構造の一部を、多層構造の表面側(第2導電型半導体層24の側)から第1導電型半導体層22の途中までエッチングすることで形成されている。多層構造の表面は、第2導電型半導体層24の表面により構成されている。UV−LED2は、第1導電型半導体層22の露出した表面上に、第1電極25が形成され、第2導電型半導体層24の表面上に、第2電極26が形成されている。UV−LED2は、第1導電型半導体層22の導電型(第1導電型)がn型であり、第2導電型半導体層24の導電型(第2導電型)がp型である。よって、UV−LED2は、第1電極25が負電極を構成し、第2電極26が正電極を構成する。UV−LED2は、第1電極25と第2電極26との間に通電されることにより紫外線を放射する。なお、UV−LED2は、第1導電型がp型であり、第2導電型がn型である場合、第1電極25が正電極を構成し、第2電極26が負電極を構成する。  As shown in the example of FIG. 2, the UV-LED 2 includes a substrate 20, and on the first surface side (upper surface side in the example of FIG. 2), the buffer layer 21, A first conductivity type semiconductor layer 22, a light emitting layer 23, and a second conductivity type semiconductor layer 24 are formed. Although FIG. 2 shows a multilayer structure, the UV-LED 2 has, for example, a mesa structure. The mesa structure is formed by etching a part of the multilayer structure from the surface side of the multilayer structure (second conductive semiconductor layer 24 side) to the middle of the first conductive semiconductor layer 22. The surface of the multilayer structure is constituted by the surface of the second conductivity type semiconductor layer 24. In the UV-LED 2, the first electrode 25 is formed on the exposed surface of the first conductive type semiconductor layer 22, and the second electrode 26 is formed on the surface of the second conductive type semiconductor layer 24. In the UV-LED 2, the conductivity type (first conductivity type) of the first conductivity type semiconductor layer 22 is n-type, and the conductivity type (second conductivity type) of the second conductivity type semiconductor layer 24 is p-type. Therefore, in the UV-LED 2, the first electrode 25 forms a negative electrode, and the second electrode 26 forms a positive electrode. The UV-LED 2 emits ultraviolet rays when energized between the first electrode 25 and the second electrode 26. In the UV-LED 2, when the first conductivity type is p-type and the second conductivity type is n-type, the first electrode 25 constitutes a positive electrode and the second electrode 26 constitutes a negative electrode.

UV−LED2は、第1電極25及び第2電極26が、このUV−LED2の厚さ方向の一面側に設けられている。これにより、紫外線発光素子2は、実装基板3にフリップチップ実装することができる。すなわち、各紫外線発光素子2は、それ自身(2)の第1電極25および第2電極26の側を実装基板3に接続するように、実装基板3に搭載される。UV−LED2は、基板20が、発光層23で発光した紫外線を透過する材料により形成されており、基板20の第2面(図2の例では下面)が、光取り出し面を構成している。UV−LED2は、発光層23で発光した紫外線が基板20の第2面から放射される。UV−LED2は、第1導電型半導体層22と発光層23と第2導電型半導体層24とを含む多層構造が、MOVPE法により形成されている。第1電極25及び第2電極26の各々は、オーミック電極と、パッド電極と、を含む。  In the UV-LED 2, the first electrode 25 and the second electrode 26 are provided on one surface side of the UV-LED 2 in the thickness direction. Thereby, the ultraviolet light emitting element 2 can be flip-chip mounted on the mounting substrate 3. That is, each ultraviolet light-emitting element 2 is mounted on the mounting substrate 3 so that the first electrode 25 and the second electrode 26 side of itself (2) are connected to the mounting substrate 3. In the UV-LED 2, the substrate 20 is formed of a material that transmits ultraviolet light emitted from the light emitting layer 23, and the second surface (the lower surface in the example of FIG. 2) of the substrate 20 constitutes a light extraction surface. . In the UV-LED 2, ultraviolet light emitted from the light emitting layer 23 is emitted from the second surface of the substrate 20. In the UV-LED 2, a multilayer structure including the first conductive semiconductor layer 22, the light emitting layer 23, and the second conductive semiconductor layer 24 is formed by the MOVPE method. Each of the first electrode 25 and the second electrode 26 includes an ohmic electrode and a pad electrode.

UV−LED2は、より詳細には次のように構成されている。  More specifically, the UV-LED 2 is configured as follows.

基板20は、サファイア基板により構成されている。また、バッファ層21は、AlN層により構成されている。第1導電型半導体層22は、n型AlGaN層により構成されている。発光層23は、多重量子井戸構造を備える。多重量子井戸構造は、第1のAlGaN層からなる障壁層と、第2のAlGaN層からなる井戸層と、を備える。第2のAlGaN層は、第1のAlGaN層よりもバンドギャップが大きい。第2導電型半導体層24は、p型AlGaN層と、p型GaN層と、を備える。p型GaN層は、第2電極26と良好なオーミック接触を得るためのp型コンタクト層として設けてある。  The substrate 20 is composed of a sapphire substrate. The buffer layer 21 is composed of an AlN layer. The first conductivity type semiconductor layer 22 is composed of an n-type AlGaN layer. The light emitting layer 23 has a multiple quantum well structure. The multiple quantum well structure includes a barrier layer made of a first AlGaN layer and a well layer made of a second AlGaN layer. The second AlGaN layer has a larger band gap than the first AlGaN layer. The second conductivity type semiconductor layer 24 includes a p-type AlGaN layer and a p-type GaN layer. The p-type GaN layer is provided as a p-type contact layer for obtaining good ohmic contact with the second electrode 26.

UV−LED2の発光ピーク波長は、260nm〜280nmの範囲にある。よって、UV−LED2は、UV−Cの波長域に発光ピーク波長を有する。UV−Cの波長域は、例えば国際照明委員会(CIE)における紫外線の波長による分類によれば、100nm〜280nmである。  The emission peak wavelength of the UV-LED 2 is in the range of 260 nm to 280 nm. Therefore, the UV-LED 2 has an emission peak wavelength in the UV-C wavelength region. The wavelength range of UV-C is, for example, 100 nm to 280 nm according to the classification by the wavelength of ultraviolet rays in the International Commission on Illumination (CIE).

UV−LED2のチップサイズは、400μm□(μm sq.)、つまり400μm×400μmに設定してあるが、これに限らない。チップサイズは、例えば、200μm□(200μm×200μm)〜1mm□(1mm×1mm)程度の範囲で適宜設定することができる。また、UV−LED2の外周形状は、正方形状に限らず、例えば、長方形状等でもよい。  The chip size of the UV-LED 2 is set to 400 μm □ (μm sq.), That is, 400 μm × 400 μm, but is not limited thereto. The chip size can be appropriately set within a range of, for example, about 200 μm □ (200 μm × 200 μm) to 1 mm □ (1 mm × 1 mm). Further, the outer peripheral shape of the UV-LED 2 is not limited to a square shape, and may be, for example, a rectangular shape.

紫外線発光装置1は、上述のように、複数個の紫外線発光素子2が並列接続されている。より詳細には、紫外線発光装置1は、6個の紫外線発光素子2が並列接続されている。  As described above, the ultraviolet light emitting device 1 has a plurality of ultraviolet light emitting elements 2 connected in parallel. More specifically, the ultraviolet light emitting device 1 has six ultraviolet light emitting elements 2 connected in parallel.

紫外線発光装置1は、複数個の紫外線発光素子2を実装基板3に実装することにより、複数個の紫外線発光素子2が並列接続されている。「紫外線発光素子2を実装基板3に実装する」とは、紫外線発光素子2を実装基板3に搭載して機械的に接続することと、電気的に接続すること、を含む概念である。  In the ultraviolet light emitting device 1, a plurality of ultraviolet light emitting elements 2 are connected in parallel by mounting a plurality of ultraviolet light emitting elements 2 on a mounting substrate 3. “Mounting the ultraviolet light-emitting element 2 on the mounting substrate 3” is a concept including mounting the ultraviolet light-emitting element 2 on the mounting substrate 3 and mechanically connecting it and electrically connecting it.

紫外線発光装置1は、実装基板3が、シリコン基板から形成されているのが好ましい。これにより、紫外線発光装置1は、実装基板3が樹脂系基板から形成されている場合に比べて、放熱性を向上させることが可能となり、光出力の高出力化を図ることが可能となる。  In the ultraviolet light emitting device 1, the mounting substrate 3 is preferably formed of a silicon substrate. As a result, the ultraviolet light emitting device 1 can improve heat dissipation as compared with the case where the mounting substrate 3 is formed of a resin-based substrate, and can increase the light output.

実装基板3は、シリコン基板から形成されている場合、図3の例に示すように、シリコン基板30と、電気絶縁膜31と、第1導体部32と、第2導体部33と、第1端子部34と、第2端子部35と、を備えた構成とすることができる。  When the mounting substrate 3 is formed of a silicon substrate, as shown in the example of FIG. 3, the silicon substrate 30, the electrical insulating film 31, the first conductor portion 32, the second conductor portion 33, It can be set as the structure provided with the terminal part 34 and the 2nd terminal part 35. FIG.

電気絶縁膜31は、シリコン基板30の表面(図3の例では上面)上に形成されている。電気絶縁膜31は、例えば、シリコン酸化膜により構成することができる。第1導体部32、第2導体部33、第1端子部34及び第2端子部35は、電気絶縁膜31の表面上に形成されている。  The electrical insulating film 31 is formed on the surface (upper surface in the example of FIG. 3) of the silicon substrate 30. The electrical insulating film 31 can be composed of, for example, a silicon oxide film. The first conductor portion 32, the second conductor portion 33, the first terminal portion 34, and the second terminal portion 35 are formed on the surface of the electrical insulating film 31.

第1導体部32は、紫外線発光素子2の第1電極25が電気的に接続される導体部である。第2導体部33は、紫外線発光素子2の第2電極26が電気的に接続される導体部である。  The first conductor portion 32 is a conductor portion to which the first electrode 25 of the ultraviolet light emitting element 2 is electrically connected. The second conductor portion 33 is a conductor portion to which the second electrode 26 of the ultraviolet light emitting element 2 is electrically connected.

より詳しくは、紫外線発光装置1は、紫外線発光素子2の第1電極25と実装基板3の第1導体部32とが第1接合部36を介して接合され、且つ、紫外線発光素子2の第2電極26と実装基板3の第2導体部33とが第2接合部37を介して接合されている。第1接合部36及び第2接合部37は、導電性を有するバンプにより構成されている。バンプの材料としては、Auを採用しているが、これに限らず、例えば、Al、Cu等を採用することもできる。第1接合部36及び第2接合部37は、導電性を有するバンプに限らず、例えば、半田等により形成してもよい。  More specifically, in the ultraviolet light emitting device 1, the first electrode 25 of the ultraviolet light emitting element 2 and the first conductor portion 32 of the mounting substrate 3 are joined via the first joining portion 36, and the first light emitting element 2 of the ultraviolet light emitting element 2 is joined. The two electrodes 26 and the second conductor portion 33 of the mounting substrate 3 are joined via the second joint portion 37. The 1st junction part 36 and the 2nd junction part 37 are comprised by the bump which has electroconductivity. As the material of the bump, Au is adopted, but not limited thereto, for example, Al, Cu or the like can be adopted. The 1st junction part 36 and the 2nd junction part 37 may be formed not only with the bump which has electroconductivity but with solder etc., for example.

紫外線発光装置1は、第1接合部36及び第2接合部37が導電性のバンプの場合、第2接合部37の数が第1接合部36の数よりも多いのが好ましい(図3の破線の37参照)。これにより、紫外線発光装置1は、放熱性を向上させることが可能となる。  In the ultraviolet light emitting device 1, when the first joint portion 36 and the second joint portion 37 are conductive bumps, the number of the second joint portions 37 is preferably larger than the number of the first joint portions 36 (see FIG. 3). (See broken line 37). Thereby, the ultraviolet light-emitting device 1 can improve heat dissipation.

実装基板3は、複数個の紫外線発光素子2を並列接続した並列回路の一対の入力端の一方を構成する第1端子部34と、一対の入力端の他方を構成する第2端子部35と、を更に備える。図3の例では、第1端子部34は、第1導体部32を介して、複数個の紫外線発光素子2の第1電極25に電気的に接続されている一方、第2端子部35は、第2導体部33を介して、複数個の紫外線発光素子2の第2電極26に電気的に接続されている。よって、紫外線発光装置1は、第1端子部34と第2端子部35との間に給電されることにより、全ての紫外線発光素子2に対して給電される。  The mounting substrate 3 includes a first terminal portion 34 constituting one of a pair of input ends of a parallel circuit in which a plurality of ultraviolet light emitting elements 2 are connected in parallel, and a second terminal portion 35 constituting the other of the pair of input ends. Are further provided. In the example of FIG. 3, the first terminal portion 34 is electrically connected to the first electrodes 25 of the plurality of ultraviolet light emitting elements 2 through the first conductor portion 32, while the second terminal portion 35 is In addition, the second conductor portions 33 are electrically connected to the second electrodes 26 of the plurality of ultraviolet light emitting elements 2. Therefore, the ultraviolet light emitting device 1 is fed to all the ultraviolet light emitting elements 2 by being fed between the first terminal portion 34 and the second terminal portion 35.

第1導体部32、第2導体部33、第1端子部34及び第2端子部35は、Au層と、Au層と電気絶縁膜31との間に介在しAu層に比べて電気絶縁膜31との密着性の良い層(以下、「密着層」という。)と、を備えるのが好ましい。密着層の材料としては、例えば、Tiを採用しているが、これに限らず、例えば、Cr、Nb、Zr、TiN、TaN等を採用することができる。  The first conductor portion 32, the second conductor portion 33, the first terminal portion 34, and the second terminal portion 35 are interposed between the Au layer, the Au layer, and the electrical insulating film 31. 31 (hereinafter referred to as “adhesion layer”). For example, Ti is employed as the material of the adhesion layer, but is not limited thereto, and for example, Cr, Nb, Zr, TiN, TaN, or the like can be employed.

実装基板3の外周形状は、正方形状であるが、これに限らない。実装基板3の外周形状は、例えば、長方形状でもよいし、矩形以外の多角形状、円形状等でもよい。「矩形」とは、全ての角が直角の四角形を意味し、長方形と、正方形と、の両方を含む。  The outer peripheral shape of the mounting substrate 3 is a square shape, but is not limited thereto. The outer peripheral shape of the mounting substrate 3 may be, for example, a rectangular shape, a polygonal shape other than a rectangular shape, a circular shape, or the like. “Rectangle” means a quadrangle in which all corners are right angles, and includes both a rectangle and a square.

なお、実装基板3は、シリコン基板から形成されたものに限らず、例えば、セラミック基板により構成してもよい。  Note that the mounting substrate 3 is not limited to being formed of a silicon substrate, and may be formed of, for example, a ceramic substrate.

配線基板4は、金属ベースプリント配線板であるのが好ましい。これにより、紫外線発光装置1は、放熱性を更に向上させることが可能となる。  The wiring board 4 is preferably a metal-based printed wiring board. Thereby, the ultraviolet light emitting device 1 can further improve the heat dissipation.

図4の例に示すように、金属ベースプリント配線板は、金属板40と、金属板40の表面に所定のパターンで形成された電気絶縁層41と、電気絶縁層41の表面に形成された第1配線部42と、電気絶縁層41の表面に形成された第2配線部43と、を備える。図4では、複数個の紫外線発光素子2の図示は省略されている。紫外線発光装置1は、実装基板3と金属板40とを接合している第3接合部10と、第1端子部34と第1配線部42とを電気的に接続している第1ワイヤ11と、第2端子部35と第2配線部43とを電気的に接続している第2ワイヤ12と、を備える。第3接合部10は、金属と樹脂との混合材料により形成されている。第3接合部10は、金属と樹脂との混合材料、半田、共晶合金の群から選択される1つの材料により形成されているのが好ましい。これにより、紫外線発光装置1は、複数個の紫外線発光素子2から実装基板3へ伝熱された熱を、第3接合部10及び配線基板4を介して効率良く放熱させることが可能となる。金属と樹脂との混合材料からなる第3接合部10は、例えば、導電ペーストから形成することができる。導電ペーストとしては、例えば、銀ペースト、金ペースト、銅ペースト等を採用することができる。半田としては、例えば、AuSn、SnAgCu等の鉛フリー半田が好ましい。共晶合金としては、例えば、AuSn等を採用することができる。この場合は、製造時において、金属板40の表面における接合表面に、予めAu又はAgからなる金属層を形成する前処理が必要である。これにより、紫外線発光装置1は、製造時に、実装基板3と金属板40とを、共晶接合法により接合することが可能となる。  As shown in the example of FIG. 4, the metal base printed wiring board is formed on the surface of the metal plate 40, the electric insulating layer 41 formed in a predetermined pattern on the surface of the metal plate 40, and the surface of the electric insulating layer 41. A first wiring part 42 and a second wiring part 43 formed on the surface of the electrical insulating layer 41 are provided. In FIG. 4, the plurality of ultraviolet light emitting elements 2 are not shown. The ultraviolet light emitting device 1 includes a first wire 11 that electrically connects the third joint portion 10 that joins the mounting substrate 3 and the metal plate 40, and the first terminal portion 34 and the first wiring portion 42. And a second wire 12 that electrically connects the second terminal portion 35 and the second wiring portion 43. The 3rd junction part 10 is formed with the mixed material of a metal and resin. The third joint 10 is preferably formed of one material selected from the group consisting of a mixed material of metal and resin, solder, and a eutectic alloy. As a result, the ultraviolet light emitting device 1 can efficiently dissipate the heat transferred from the plurality of ultraviolet light emitting elements 2 to the mounting substrate 3 through the third joint portion 10 and the wiring substrate 4. The 3rd junction part 10 which consists of a mixed material of a metal and resin can be formed from a conductive paste, for example. As the conductive paste, for example, a silver paste, a gold paste, a copper paste, or the like can be employed. As the solder, for example, lead-free solder such as AuSn or SnAgCu is preferable. As the eutectic alloy, for example, AuSn or the like can be adopted. In this case, a pretreatment for forming a metal layer made of Au or Ag in advance on the bonding surface of the surface of the metal plate 40 is necessary at the time of manufacture. Thereby, the ultraviolet light emitting device 1 can join the mounting substrate 3 and the metal plate 40 by a eutectic bonding method at the time of manufacture.

金属板40は、各種の金属のなかで、熱伝導率の高い金属により形成されているのが好ましい。金属板40は、アルミニウム基板により構成されているが、これに限らず、例えば、銅基板等を採用してもよい。  The metal plate 40 is preferably formed of a metal having a high thermal conductivity among various metals. Although the metal plate 40 is comprised by the aluminum substrate, it may not be restricted to this, For example, you may employ | adopt a copper substrate.

電気絶縁層41は、例えば、絶縁性樹脂により形成することができるが、これに限らず、無機酸化物等により形成してもよい。  The electrical insulating layer 41 can be formed of, for example, an insulating resin, but is not limited thereto, and may be formed of an inorganic oxide or the like.

第1配線部42及び第2配線部43の材料としては、例えば、Cu等を採用することができる。第1配線部42及び第2配線部43は、単層構造に限らず、多層構造でもよい。  As a material of the first wiring part 42 and the second wiring part 43, for example, Cu or the like can be adopted. The first wiring part 42 and the second wiring part 43 are not limited to a single layer structure, and may have a multilayer structure.

第1ワイヤ11及び第2ワイヤ12としては、例えば、金ワイヤ、銀ワイヤ、銅ワイヤ、アルミニウムワイヤ等を採用することができる。  As the 1st wire 11 and the 2nd wire 12, a gold wire, a silver wire, a copper wire, an aluminum wire etc. are employable, for example.

ところで、紫外線LEDチップ(UV−LED)は、青色LEDチップに比べて駆動電圧が高い。このため、紫外線発光装置1では、例えば、除菌、殺菌等の用途で用いる場合に12V程度の電源等で駆動できるように、複数個の紫外線発光素子2を並列接続してある。しかしながら、紫外線LEDチップは、青色LEDチップに比べて、チップごとの駆動電圧のばらつきが大きい。青色LEDチップの駆動電圧は、例えば、3.2V〜3.3V程度である。これに対して、紫外線LEDチップの駆動電圧は、8V〜10V程度である。紫外線LEDチップの駆動電圧は、製造時のウェハの面内ばらつきだけでなく、ウェハ間のばらつき、ロット間のばらつき等もある。このため、駆動電圧が8V〜10Vの範囲に含まれる紫外線LEDチップの母集団から任意に選んだ複数個の紫外線LEDチップの並列回路を一定電流で駆動した場合には、各紫外線LEDチップごとの電流のばらつきが大きくなることがあった。このような場合には、一部の紫外線LEDチップに流れる電流が大きくなり過ぎ、配光むらが生じたり、寿命が短くなってしまうことがあった。一方、青色LEDに比べ紫外線LEDは主波長位置のばらつきが比較的小さい。また、青色LEDで問題になる数nm程度の主波長位置の差は、殺菌や樹脂硬化などの紫外線LEDの用途では問題にならないことが多い。ゆえに、従来の青色LEDは主に出力と主波長位置(=色調)の観点で分類されていた。たとえば、文献(WO2014061513)などに色調で分類する方法を見ることができる。  By the way, the ultraviolet LED chip (UV-LED) has a higher driving voltage than the blue LED chip. For this reason, in the ultraviolet light emitting device 1, a plurality of ultraviolet light emitting elements 2 are connected in parallel so that the ultraviolet light emitting device 1 can be driven by a power source of about 12 V when used for applications such as sterilization and sterilization. However, the ultraviolet LED chip has a larger variation in driving voltage from chip to chip than the blue LED chip. The driving voltage of the blue LED chip is, for example, about 3.2V to 3.3V. On the other hand, the driving voltage of the ultraviolet LED chip is about 8V to 10V. The driving voltage of the ultraviolet LED chip includes not only in-plane variations of wafers during manufacturing, but also variations between wafers and lots. For this reason, when a parallel circuit of a plurality of UV LED chips arbitrarily selected from a population of UV LED chips included in the range of 8V to 10V is driven with a constant current, each UV LED chip In some cases, the variation in current increased. In such a case, the current flowing through some of the ultraviolet LED chips becomes too large, causing uneven light distribution and shortening the life. On the other hand, the ultraviolet LED has a relatively small variation in the main wavelength position compared to the blue LED. In addition, the difference in the dominant wavelength position of about several nanometers, which is a problem with blue LEDs, is often not a problem for ultraviolet LED applications such as sterilization and resin curing. Therefore, conventional blue LEDs have been classified mainly in terms of output and dominant wavelength position (= color tone). For example, a method of classifying by color tone can be seen in literature (WO20140651313).

これに対して、本願発明者らは、従来の分類方法よりも紫外線LEDの特性に合った上述の分類マトリックスを考えた。分類マトリックスは、紫外線LEDチップを、電気的特性である駆動電圧と、光学的特性である光出力と、で分類するマトリックスである。「分類する」とは、類似の駆動電圧及び類似の光出力を有するグループに選別することを意味する。「分類領域」とは、分類マトリックスの最小範囲を意味する。  In contrast, the inventors of the present application have considered the above-described classification matrix that matches the characteristics of the ultraviolet LED rather than the conventional classification method. The classification matrix is a matrix that classifies ultraviolet LED chips by drive voltage that is electrical characteristics and light output that is optical characteristics. “Classify” means sorting into groups having similar drive voltages and similar light outputs. “Classification region” means the minimum range of a classification matrix.

分類マトリックスの行は、光出力の大きさを光出力範囲で3個の区分に分けている。分類マトリックスは、3個の光出力範囲として、第1、第2および第3光出力範囲を含む。第1光出力範囲(OOR1)は、1.7mW以上2.0mW未満の範囲である。換言すると、第1光出力範囲の下限(1.7mW)は第1光出力範囲の上限(2.0mW)に対して−15%の光出力差を有する。第2光出力範囲(OOR2)は、OOR1よりも高い、2.0mW以上2.3mW未満の範囲である。換言すると、第2光出力範囲の上限(2.3mW)は、第2光出力範囲の下限(2.0mW)に対して+15%の光出力差を持つ。第3光出力範囲(OOR3)は、OOR2よりも高い、2.3mW以上2.7mW未満の範囲である。換言すると、第3光出力範囲の上限(2.7mW)は、第3光出力範囲の下限(2.3mW)に対して約+18%の光出力差を有する。別例において、第3光出力範囲(OOR3)は、2.3mW以上2.645mW未満の範囲である。この場合、第3光出力範囲の上限(2.645mW)は、第3光出力範囲の下限(2.3mW)に対して+15%の光出力差を有する。  The rows of the classification matrix divide the magnitude of the light output into three sections in the light output range. The classification matrix includes first, second, and third light output ranges as three light output ranges. The first light output range (OOR1) is a range of 1.7 mW or more and less than 2.0 mW. In other words, the lower limit (1.7 mW) of the first light output range has a light output difference of −15% with respect to the upper limit (2.0 mW) of the first light output range. The second light output range (OOR2) is a range higher than OOR1 and not less than 2.0 mW and less than 2.3 mW. In other words, the upper limit (2.3 mW) of the second light output range has a light output difference of + 15% with respect to the lower limit (2.0 mW) of the second light output range. The third light output range (OOR3) is a range higher than OOR2 but not less than 2.3 mW and less than 2.7 mW. In other words, the upper limit (2.7 mW) of the third light output range has a light output difference of about + 18% with respect to the lower limit (2.3 mW) of the third light output range. In another example, the third light output range (OOR3) is a range of 2.3 mW or more and less than 2.645 mW. In this case, the upper limit (2.645 mW) of the third light output range has a light output difference of + 15% with respect to the lower limit (2.3 mW) of the third light output range.

分類マトリックスの列は、駆動電圧の大きさを駆動電圧範囲で10個の区分に分けている。分類マトリックスは、10個の駆動電圧範囲として、第1、第2、第3、第4、第5、第6、第7、第8、第9および第10駆動電圧範囲を含む。第1駆動電圧範囲(DVR1)は、8.0V以上8.2V未満の範囲である。第2駆動電圧範囲(DVR2)は、DVR1よりも高い、8.2V以上8.4V未満の範囲である。第3駆動電圧範囲(DVR3)は、DVR2よりも高い、8.4V以上8.6V未満の範囲である。第4駆動電圧範囲(DVR4)は、DVR3よりも高い、8.6V以上8.8V未満の範囲である。第5駆動電圧範囲(DVR5)は、DVR4よりも高い、8.8V以上9.0V未満の範囲である。第6駆動電圧範囲(DVR6)は、DVR5よりも高い、9.0V以上9.2V未満の範囲である。第7駆動電圧範囲(DVR7)は、DVR6よりも高い、9.2V以上9.4V未満の範囲である。第8駆動電圧範囲(DVR8)は、DVR7よりも高い、9.4V以上9.6V未満の範囲である。第9駆動電圧範囲(DVR9)は、DVR8よりも高い、9.6V以上9.8V未満の範囲である。第10駆動電圧範囲(DVR10)は、DVR9よりも高い、9.8V以上10.0V未満の範囲である。  The column of the classification matrix divides the magnitude of the drive voltage into 10 sections in the drive voltage range. The classification matrix includes first, second, third, fourth, fifth, sixth, seventh, eighth, ninth and tenth driving voltage ranges as ten driving voltage ranges. The first drive voltage range (DVR1) is a range of 8.0 V or more and less than 8.2 V. The second drive voltage range (DVR2) is a range higher than DVR1 and not lower than 8.2V and lower than 8.4V. The third drive voltage range (DVR3) is a range higher than DVR2 and not lower than 8.4V and lower than 8.6V. The fourth drive voltage range (DVR4) is a range higher than DVR3 and not lower than 8.6V and lower than 8.8V. The fifth drive voltage range (DVR5) is a range higher than DVR4 and not lower than 8.8V and lower than 9.0V. The sixth drive voltage range (DVR6) is a range higher than 9.0V and lower than 9.2V higher than DVR5. The seventh drive voltage range (DVR7) is a range higher than DVR6 and not lower than 9.2V and lower than 9.4V. The eighth drive voltage range (DVR8) is a range higher than DVR7 and not lower than 9.4V and lower than 9.6V. The ninth drive voltage range (DVR9) is a range higher than DVR8 and not lower than 9.6V and lower than 9.8V. The tenth drive voltage range (DVR10) is a range higher than DVR9 and not lower than 9.8V and lower than 10.0V.

上述の説明から分かるように、分類マトリックスは、3行10列のマトリックスであり、30個の分類領域X1Y1〜X3Y10を含む。ここで、符号に関して、「X」に付した数字は行番号を示し、詳しくは、1〜3は、それぞれ、第1〜第3光出力範囲に対応する。「Y」に付した数字は列番号を示し、詳しくは、1〜10は、それぞれ、第1〜第10駆動電圧範囲に対応する。  As can be seen from the above description, the classification matrix is a matrix of 3 rows and 10 columns, and includes 30 classification regions X1Y1 to X3Y10. Here, regarding the reference numerals, numbers attached to “X” indicate row numbers, and specifically, 1 to 3 correspond to the first to third light output ranges, respectively. Numbers attached to “Y” indicate column numbers. Specifically, 1 to 10 correspond to the first to tenth drive voltage ranges, respectively.

紫外線LEDチップの光出力は、積分球及び分光器を利用して測定した値である。より詳細には、光出力の値は、サファイアプレート上に紫外線LEDチップ2(紫外線発光素子候補)を置いて、2本のプローブ針を第1電極25と第2電極26とに1本ずつ接触させ、20mAの定電流を30msecだけ流したときの光出力を積分球で集光して、光ファイバで取り出し、分光器で測定した値である。  The light output of the ultraviolet LED chip is a value measured using an integrating sphere and a spectroscope. More specifically, the light output value is determined by placing the ultraviolet LED chip 2 (candidate ultraviolet light emitting element) on the sapphire plate and bringing the two probe needles into contact with the first electrode 25 and the second electrode 26 one by one. The light output when a constant current of 20 mA is applied for 30 msec is collected by an integrating sphere, taken out with an optical fiber, and measured with a spectroscope.

紫外線発光素子2の駆動電圧は、20mAの定電流を5msecだけ流したときの順方向電圧降下(Vf)である。  The driving voltage of the ultraviolet light emitting element 2 is a forward voltage drop (Vf) when a constant current of 20 mA is supplied for 5 msec.

複数の駆動電圧範囲における所定の駆動電圧範囲は、8.8V以上9.0V未満の範囲(第5駆動電圧範囲)とした。また、複数の光出力範囲における中心の光出力範囲は、2.0mW以上2.3mW未満の範囲(第2光出力範囲)である。  The predetermined drive voltage range in the plurality of drive voltage ranges is a range of 8.8 V or more and less than 9.0 V (fifth drive voltage range). The central light output range in the plurality of light output ranges is a range (second light output range) of 2.0 mW or more and less than 2.3 mW.

紫外線発光装置1における複数個の紫外線発光素子2は、分類マトリックスにおける第1の分類領域X1Y5の紫外線発光素子2と、第2の分類領域X3Y5の紫外線発光素子2と、のみから構成してある。  The plurality of ultraviolet light emitting elements 2 in the ultraviolet light emitting device 1 is composed of only the ultraviolet light emitting elements 2 in the first classification region X1Y5 and the ultraviolet light emitting elements 2 in the second classification region X3Y5 in the classification matrix.

第1の分類領域X1Y5は、複数の駆動電圧範囲における所定の1つの駆動電圧範囲と、複数の光出力範囲における中心の光出力範囲を基準として対称の位置にある2つの光出力範囲(1.7mW以上2.0mW未満の範囲および2.3mW以上2.7mW未満の範囲)のうち、光出力の低い光出力範囲(1.7mW以上2.0mW未満の範囲)と、で規定されている。表1の例では、第1の分類領域X1Y5は、第5駆動電圧範囲および第1光出力範囲で規定されている。  The first classification region X1Y5 includes two light output ranges (1...) That are symmetric with respect to a predetermined one drive voltage range in the plurality of drive voltage ranges and a central light output range in the plurality of light output ranges. Among the ranges of 7 mW or more and less than 2.0 mW and 2.3 mW or more and less than 2.7 mW), the light output range has a low light output (range of 1.7 mW or more and less than 2.0 mW). In the example of Table 1, the first classification region X1Y5 is defined by the fifth drive voltage range and the first light output range.

第2の分類領域X3Y5は、複数の駆動電圧範囲における上記所定の1つの駆動電圧範囲と、複数の光出力範囲における中心の光出力範囲を基準として対称の位置にある2つの光出力範囲(1.7mW以上2.0mW未満の範囲および2.3mW以上2.7mW未満の範囲)のうち、光出力の高い光出力範囲(2.3mW以上2.7mW未満の範囲)と、で規定されている。表1の例では、第2の分類領域X3Y5は、第5駆動電圧範囲および第3光出力範囲で規定されている。  The second classification region X3Y5 includes two light output ranges (1) which are symmetrical with respect to the predetermined one drive voltage range in the plurality of drive voltage ranges and the central light output range in the plurality of light output ranges. 2.7 mW or more and less than 2.0 mW and 2.3 mW or more and less than 2.7 mW), and a high light output range (range of 2.3 mW or more and less than 2.7 mW). . In the example of Table 1, the second classification region X3Y5 is defined by the fifth drive voltage range and the third light output range.

このように、分類マトリックスに基づいて得られた紫外線発光装置1は、各紫外線発光素子2に流れる電流のばらつきを抑制することが可能となった。これにより、紫外線発光装置1は、歩留りの向上を図りつつ、光出力の高出力化及び長寿命化を図ることが可能となる。よって、紫外線発光装置1は、低コスト化を図りつつ、光出力の高出力化及び長寿命化を図ることが可能となる。  As described above, the ultraviolet light emitting device 1 obtained based on the classification matrix can suppress variation in the current flowing through each ultraviolet light emitting element 2. Thereby, the ultraviolet light emitting device 1 can achieve high output and long life of the light output while improving the yield. Therefore, the ultraviolet light emitting device 1 can achieve high output and long life of light output while reducing costs.

紫外線発光装置1は、例えば、1つの仮想円5の円周上において複数個の紫外線発光素子2が等間隔で並んでいるのが好ましい。これにより、紫外線発光装置1は、配光むらを抑制することが可能となる。  In the ultraviolet light emitting device 1, for example, it is preferable that a plurality of ultraviolet light emitting elements 2 are arranged at equal intervals on the circumference of one virtual circle 5. Thereby, the ultraviolet light emitting device 1 can suppress uneven light distribution.

紫外線発光装置1において、複数個の紫外線発光素子2は、6個の紫外線発光素子2であるのが好ましい。これにより、紫外線発光装置1は、複数個の紫外線発光素子2それぞれの光出力の合計として12mW以上の光出力を得ることが可能となる。  In the ultraviolet light emitting device 1, the plurality of ultraviolet light emitting elements 2 are preferably six ultraviolet light emitting elements 2. Thereby, the ultraviolet light emitting device 1 can obtain a light output of 12 mW or more as a total of the light outputs of the plurality of ultraviolet light emitting elements 2.

紫外線発光装置1において、複数個の紫外線発光素子2は、第1の分類領域X1Y5の特性を有する紫外線発光素子2と第2の分類領域X3Y5の特性を有する紫外線発光素子2とが、仮想円5の円周上で交互に並んでいるのが好ましい。これにより、紫外線発光装置1は、複数個の紫外線発光素子2の温度のばらつきを抑制することが可能となり、光出力の高出力化を図ることが可能となる。  In the ultraviolet light emitting device 1, the plurality of ultraviolet light emitting elements 2 includes an ultraviolet light emitting element 2 having the characteristics of the first classification region X 1 Y 5 and an ultraviolet light emitting element 2 having the characteristics of the second classification region X 3 Y 5. It is preferable that they are arranged alternately on the circumference. As a result, the ultraviolet light emitting device 1 can suppress variations in temperature of the plurality of ultraviolet light emitting elements 2, and can increase the light output.

紫外線発光装置1は、トータル光出力が少なくとも10mWであるのが好ましい。これにより、より効果的に除菌、殺菌等を行うことが可能となる。本明細書において、「トータル光出力」とは、紫外線発光装置1が、例えば、紫外線の配光を制御するためのレンズを備えている場合、レンズを通して出射される紫外線の出力を意味する。レンズの材料としては、例えば、屈伏点が600℃以下のガラスを採用している。これにより、紫外線発光装置1は、レンズを、成形により形成された非球面レンズとすることが可能となる。よって、紫外線発光装置1は、レンズが非球面レンズであることにより、半球状のレンズである場合に比べて、レンズの薄型化を図ることが可能となり、また、光取り出し効率の向上を図ることが可能となる。また、紫外線発光装置1の製造にあたっては、レンズを成形により形成することができるので、研削により形成する場合に比べて、レンズの生産性を向上させることが可能となる。  The ultraviolet light emitting device 1 preferably has a total light output of at least 10 mW. Thereby, it becomes possible to perform sterilization, sterilization, etc. more effectively. In this specification, “total light output” means the output of ultraviolet rays emitted through a lens when the ultraviolet light emitting device 1 includes, for example, a lens for controlling the distribution of ultraviolet rays. As a material for the lens, for example, glass having a yield point of 600 ° C. or less is employed. Thereby, the ultraviolet light emitting device 1 can make the lens an aspherical lens formed by molding. Therefore, the ultraviolet light emitting device 1 can reduce the thickness of the lens as compared with the case of a hemispherical lens by using an aspheric lens, and can improve the light extraction efficiency. Is possible. Further, in manufacturing the ultraviolet light emitting device 1, since the lens can be formed by molding, the productivity of the lens can be improved as compared with the case where it is formed by grinding.

レンズの材料であるガラスとしては、紫外線発光素子2が放射する紫外線に対する透過率が70%以上であるのが好ましく、80%以上であるのがより好ましい。このため、レンズの材料であるガラスとしては、屈伏点が600℃以下で且つ紫外線発光素子2の発光ピーク波長の紫外線に対する透過率が80%であるという条件を満たす硼珪酸ガラスを採用している。この種の硼珪酸ガラスとしては、例えば、SCHOTT社製の8337Bを採用することができる。  The glass as the lens material preferably has a transmittance of 70% or more, more preferably 80% or more, for the ultraviolet rays emitted from the ultraviolet light emitting element 2. For this reason, borosilicate glass that satisfies the condition that the yield point wavelength of the ultraviolet light emitting element 2 is 80% and the transmittance of the ultraviolet light emitting element 2 is 80% is employed as the lens material. . As this type of borosilicate glass, for example, 8337B manufactured by SCHOTT can be used.

紫外線発光装置1の製造方法では、紫外線LEDチップ2の駆動電圧と光出力とをそれぞれ測定して分類マトリックスに分類する選別工程と、分類マトリックスの第1の分類領域(X1Y5)に属する紫外線発光素子2と、第2の分類領域(X3Y5)に属する紫外線発光素子2と、のみから複数個の紫外線発光素子2を選択して、実装基板3に実装する実装工程と、を備える。よって、紫外線発光装置1の製造方法では、歩留りの向上を図りつつ、光出力の高出力化及び長寿命化を図ることが可能な紫外線発光装置1を提供することが可能となる。  In the method for manufacturing the ultraviolet light emitting device 1, the driving step and the light output of the ultraviolet LED chip 2 are respectively measured and classified into a classification matrix, and the ultraviolet light emitting elements belonging to the first classification region (X1Y5) of the classification matrix 2 and the ultraviolet light emitting element 2 belonging to the second classification region (X3Y5), and a mounting step of selecting a plurality of ultraviolet light emitting elements 2 only from the mounting area 3 and mounting them on the mounting substrate 3. Therefore, in the method for manufacturing the ultraviolet light emitting device 1, it is possible to provide the ultraviolet light emitting device 1 capable of increasing the light output and extending the life while improving the yield.

選別工程では、駆動電圧を測定する前にESD(Electro Static Discharge)耐性の検査を行い、ESD破壊されなかった紫外線LEDチップのみについて駆動電圧の測定を行うのが好ましい。また、選別工程では、駆動電圧を測定した後に、逆バイアスリーク電流の測定を行い逆バイアスリーク電流が規定値以下の紫外線LEDチップについてのみ分類マトリックスへの分類を行うのが好ましい。なお、ESD耐性の検査では、例えば、ESDサージに相当する高電圧パルスを第1電極25と第2電極26との間に印加したときの電流電圧波形に基づいてESD破壊の有無を判断することができる。  In the sorting step, it is preferable to perform an ESD (Electro Static Discharge) resistance test before measuring the driving voltage, and to measure the driving voltage only for the ultraviolet LED chips that are not ESD-destructed. In the selection step, it is preferable to measure the reverse bias leakage current after measuring the driving voltage and classify only the ultraviolet LED chips having the reverse bias leakage current equal to or less than the specified value into the classification matrix. In the ESD resistance test, for example, the presence or absence of ESD breakdown is determined based on the current voltage waveform when a high voltage pulse corresponding to an ESD surge is applied between the first electrode 25 and the second electrode 26. Can do.

基本構成が図1と同じである変形例(オプション)の紫外線発光装置1は、実施形態の紫外線発光装置1と同様、複数個の紫外線発光素子2と、複数個の紫外線発光素子2が実装された実装基板3と、を備え、複数個の紫外線発光素子2が並列接続されている。変形例の紫外線発光装置1における複数個の紫外線発光素子2は、複数の駆動電圧範囲と複数の光出力範囲とに従って複数の分類領域に分類した分類マトリックスにおいて、複数の分類領域のうち1つの分類領域X2Y2の特性を有する紫外線発光素子2のみを含む。1つの分類領域X2Y2は、複数の駆動電圧範囲における所定の駆動電圧範囲(8.2V以上8.4V未満の範囲)と、複数の光出力範囲における中心の光出力範囲(2.0mW以上2.3mW未満の範囲)とで、規定されている。このように、変形例の紫外線発光装置1は、複数個の紫外線発光素子2に流れる電流のばらつきを抑制することが可能となった。これにより、紫外線発光装置1においては、光出力の高出力化及び長寿命化を図ることが可能となる。  As in the ultraviolet light emitting device 1 of the embodiment, the ultraviolet light emitting device 1 of the modified example (optional) whose basic configuration is the same as FIG. 1 is mounted with a plurality of ultraviolet light emitting elements 2 and a plurality of ultraviolet light emitting elements 2. And a plurality of ultraviolet light emitting elements 2 are connected in parallel. The plurality of ultraviolet light emitting elements 2 in the modified ultraviolet light emitting device 1 are classified into one of a plurality of classification regions in a classification matrix classified into a plurality of classification regions according to a plurality of driving voltage ranges and a plurality of light output ranges. Only the ultraviolet light emitting element 2 having the characteristics of the region X2Y2 is included. One classification region X2Y2 includes a predetermined drive voltage range (a range of 8.2 V or more and less than 8.4 V) in a plurality of drive voltage ranges and a central light output range (2.0 mW or more and 2. Range of less than 3 mW). As described above, the ultraviolet light emitting device 1 of the modified example can suppress variations in the current flowing through the plurality of ultraviolet light emitting elements 2. Thereby, in the ultraviolet light-emitting device 1, it becomes possible to achieve high output of light output and long life.

上述の紫外線発光装置1の製造方法によれば、実施形態の紫外線発光装置1及び変形例の紫外線発光装置1それぞれを製造することができるので、歩留りの向上による低コスト化を図ることが可能となる。  According to the method for manufacturing the ultraviolet light emitting device 1 described above, since the ultraviolet light emitting device 1 of the embodiment and the ultraviolet light emitting device 1 of the modification can be manufactured, respectively, it is possible to reduce the cost by improving the yield. Become.

上述の実施形態等において説明した図は、模式的な図であり、各構成要素の大きさや比が、必ずしも実際の寸法比を反映しているとは限らない。また、実施形態に記載した材料、数値等は、好ましい例を挙げただけであり、それに限定する主旨ではない。  The drawings described in the above-described embodiments and the like are schematic diagrams, and the size and ratio of each component do not necessarily reflect the actual dimensional ratio. In addition, the materials, numerical values, and the like described in the embodiments are merely preferred examples and are not intended to be limited thereto.

上記の最良の形態および/または他の実施例であると考えられるものについて説明したが、種々の改変がなされてもよく、本明細書で開示される主題は種々の形態および実施例で実施されてもよく、そしてそれらは多数のアプリケーションに適用されてもよいものであり、その最適の幾つかが本明細書に記載されている。以下の特許請求の範囲によって、本教示の真の範囲内に入る任意およびすべての修正および変形を請求するものである。  Although the foregoing best mode and / or other examples are considered, various modifications may be made and the subject matter disclosed herein may be implemented in various forms and examples. And they may be applied to a number of applications, some of which are best described herein. The following claims claim any and all modifications and variations that fall within the true scope of the present teachings.

例えば、本発明の一実施形態による紫外線発光装置は、複数個の紫外線発光素子2と、複数個の紫外線発光素子2が実装された実装基板3とを備える。複数個の紫外線発光素子2は、互いに並列接続される。
(a)複数個の紫外線発光素子2の各々は、0.2Vの電圧差を持つ駆動電圧範囲内の駆動電圧と、光出力範囲内の光出力とを有し、その光出力範囲の上限は、その光出力範囲の下限に対して+15%の光出力差を持つか、あるいは、
(b)複数個の紫外線発光素子2の一部は、複数個の第1紫外線発光素子2のみを含む一方、複数個の紫外線発光素子2の残部は、複数個の第2紫外線発光素子2のみを含み、複数個の第1紫外線発光素子2と複数個の第2紫外線発光素子2は交互に配置される。ここで、複数個の第1紫外線発光素子2および複数個の第2紫外線発光素子2の各々は、0.2Vの電圧差を持つ駆動電圧範囲内の駆動電圧を有する。複数個の第1紫外線発光素子2の各々は、第1光出力範囲を有し、これは第2光出力範囲より低い。第1光出力範囲の下限は第1光出力範囲の上限に対して−15%の光出力差を有する。第2光出力範囲の上限は、第2光出力範囲の下限に対して+15%の光出力差を持つ。複数個の第2紫外線発光素子2の各々は、第2光出力範囲よりも高い第3光出力範囲内の光出力を有する。第3光出力範囲の上限は、第3光出力範囲の下限に対して+15から18%の範囲内の光出力差を有する。
For example, an ultraviolet light emitting device according to an embodiment of the present invention includes a plurality of ultraviolet light emitting elements 2 and a mounting substrate 3 on which the plurality of ultraviolet light emitting elements 2 are mounted. The plurality of ultraviolet light emitting elements 2 are connected in parallel to each other.
(A) Each of the plurality of ultraviolet light emitting elements 2 has a drive voltage within a drive voltage range having a voltage difference of 0.2 V and a light output within a light output range, and the upper limit of the light output range is Have a light output difference of + 15% with respect to the lower limit of the light output range, or
(B) Some of the plurality of ultraviolet light emitting elements 2 include only the plurality of first ultraviolet light emitting elements 2, while the remainder of the plurality of ultraviolet light emitting elements 2 includes only the plurality of second ultraviolet light emitting elements 2. The plurality of first ultraviolet light emitting elements 2 and the plurality of second ultraviolet light emitting elements 2 are alternately arranged. Here, each of the plurality of first ultraviolet light emitting elements 2 and the plurality of second ultraviolet light emitting elements 2 has a driving voltage within a driving voltage range having a voltage difference of 0.2V. Each of the plurality of first ultraviolet light emitting elements 2 has a first light output range, which is lower than the second light output range. The lower limit of the first light output range has a light output difference of −15% with respect to the upper limit of the first light output range. The upper limit of the second light output range has a light output difference of + 15% with respect to the lower limit of the second light output range. Each of the plurality of second ultraviolet light emitting elements 2 has a light output within a third light output range that is higher than the second light output range. The upper limit of the third light output range has a light output difference within a range of +15 to 18% with respect to the lower limit of the third light output range.

上記(a)の駆動電圧範囲は、例えば、8.2V以上8.4V未満の範囲であり、上記(a)の光出力範囲は、例えば、2.0mW以上2.3mW未満の範囲である。上記(b)の駆動電圧範囲は、例えば、8.8V以上9.0V未満の範囲である。上記(b)の第2光出力範囲は、例えば、2.0mW以上2.3mW未満の範囲である。第1光出力範囲は、例えば1.7mW以上2.0mW未満の範囲であり、第3光出力範囲は、2.3mW以上2.7mW未満の範囲である。  The drive voltage range of (a) is, for example, a range of 8.2 V or more and less than 8.4 V, and the light output range of (a) is, for example, a range of 2.0 mW or more and less than 2.3 mW. The drive voltage range of (b) is, for example, a range of 8.8 V or more and less than 9.0 V. The second light output range (b) is, for example, a range of 2.0 mW or more and less than 2.3 mW. The first light output range is, for example, a range from 1.7 mW to less than 2.0 mW, and the third light output range is a range from 2.3 mW to less than 2.7 mW.

特に、(b)の場合、異常配光の発生を抑制することができる。図5は、様々な駆動電圧を持つ6個の紫外線発光素子を並列に接続した電気回路のシミュレーション結果を示す。図5において、紫外線発光素子の駆動電圧に対する電流の実測値は、円、三角および菱形などの印によって示されており、点線は、それら実測値をもとに作ったシミュレーション用の近似曲線である。詳しくは、図5は、低いVf(8.3V)を持つLEDの特性曲線および高いVf(9V)を持つ特性曲線などを含んでいる。このシミュレーションから、10V近辺の駆動電圧(動作電圧)の紫外線発光素子を並列に接続したとき、駆動電圧に0.2Vの差があると、電流値に30%以上の差が生じることが分かった。このように、30%の光出力差が生じると、図6に示すように、配光特性に異常が見られる。このため、異常配光を抑制することが必要となる。上述の(b)の紫外線発光装置では、互いに光出力の属する範囲が異なる複数個の第1紫外線発光素子2と複数個の第2紫外線発光素子2とを使用しても、複数個の第1紫外線発光素子2と複数個の第2紫外線発光素子2とを交互に配置することにより、図6に示すような異常配光を抑制することができた。複数個の第1紫外線発光素子2の数は、複数個の第2紫外線発光素子2の数と異なってもよい。ただし、光出力×チップ中心位置のベクトルを考慮し、第1および第2紫外線発光素子を、その重心位置が変動しないように配置することが望ましい。また、光出力は電流値に比例するので、光出力差を抑えるためには、DVR1〜DVR10の各々(電圧範囲)を、0.2V以内にすることが望ましい。図6において、“001X”は、図1に示す1個(第1)の紫外線発光素子(図1において例えば右端)が、対応する光出力範囲よりも低い光出力を持つ異常品である場合の配光特性を示す。なお、“002X”〜“004X”は、正常品の配光特性を示す。  In particular, in the case of (b), the occurrence of abnormal light distribution can be suppressed. FIG. 5 shows a simulation result of an electric circuit in which six ultraviolet light emitting elements having various driving voltages are connected in parallel. In FIG. 5, the actual measured value of the current with respect to the driving voltage of the ultraviolet light emitting element is indicated by a mark such as a circle, a triangle, or a diamond, and the dotted line is an approximate curve for simulation made based on the actually measured value. . Specifically, FIG. 5 includes a characteristic curve of an LED having a low Vf (8.3 V), a characteristic curve having a high Vf (9 V), and the like. From this simulation, it was found that when the ultraviolet light emitting elements having a driving voltage (operating voltage) of around 10V are connected in parallel, a difference of 0.2V in the driving voltage causes a difference of 30% or more in the current value. . As described above, when a light output difference of 30% occurs, an abnormality is observed in the light distribution characteristics as shown in FIG. For this reason, it is necessary to suppress abnormal light distribution. In the ultraviolet light emitting device of (b) described above, even if a plurality of first ultraviolet light emitting elements 2 and a plurality of second ultraviolet light emitting elements 2 having different light output ranges are used, a plurality of first ultraviolet light emitting elements 2 are used. By arranging the ultraviolet light emitting elements 2 and the plurality of second ultraviolet light emitting elements 2 alternately, the abnormal light distribution as shown in FIG. 6 could be suppressed. The number of the plurality of first ultraviolet light emitting elements 2 may be different from the number of the plurality of second ultraviolet light emitting elements 2. However, in consideration of the vector of light output × chip center position, it is desirable to arrange the first and second ultraviolet light emitting elements so that the position of the center of gravity does not fluctuate. Further, since the optical output is proportional to the current value, it is desirable that each of the DVR1 to DVR10 (voltage range) be within 0.2V in order to suppress the optical output difference. In FIG. 6, “001X” is the case where one (first) ultraviolet light emitting element shown in FIG. 1 (for example, the right end in FIG. 1) is an abnormal product having a light output lower than the corresponding light output range. The light distribution characteristics are shown. “002X” to “004X” indicate light distribution characteristics of normal products.

Claims (10)

複数個の紫外線発光素子と、前記複数個の紫外線発光素子が並列接続されて実装された実装基板と、を備える紫外線発光装置の製造方法であって、
前記複数個の紫外線発光素子の駆動電圧と光出力とをそれぞれ測定して、複数の駆動電圧範囲と複数の光出力範囲とに従って複数の分類領域に分類した分類マトリックスに分類する選別工程と、
前記分類マトリックスの第1の分類領域に属する紫外線発光素子と、前記分類マトリックスの第2の分類領域に属する紫外線発光素子と、のみから複数個の紫外線発光素子を選択して、前記実装基板に実装する実装工程と
を含み、
前記第1の分類領域は、前記複数の駆動電圧範囲における所定の1つの駆動電圧範囲と、前記複数の光出力範囲における中心の光出力範囲を基準として対称の位置にある2つの光出力範囲のうち光出力の低い光出力範囲と、で規定され、
前記第2の分類領域は、前記所定の1つの駆動電圧範囲と、前記2つの光出力範囲のうち光出力の高い光出力範囲と、で規定されている、
ことを特徴とする紫外線発光装置の製造方法。
A method of manufacturing an ultraviolet light emitting device comprising: a plurality of ultraviolet light emitting elements; and a mounting substrate on which the plurality of ultraviolet light emitting elements are mounted in parallel.
A selection step of measuring drive voltages and light outputs of the plurality of ultraviolet light emitting elements, respectively, and classifying into a plurality of classification regions according to a plurality of drive voltage ranges and a plurality of light output ranges,
A plurality of ultraviolet light emitting elements are selected only from the ultraviolet light emitting elements belonging to the first classification area of the classification matrix and the ultraviolet light emitting elements belonging to the second classification area of the classification matrix, and mounted on the mounting substrate. Including a mounting process,
The first classification region includes two light output ranges that are symmetrical with respect to a predetermined drive voltage range in the plurality of drive voltage ranges and a central light output range in the plurality of light output ranges. Of which, it is defined by the light output range with low light output,
The second classification region is defined by the predetermined one drive voltage range and a light output range having a high light output among the two light output ranges.
A method for manufacturing an ultraviolet light emitting device.
前記実装基板は、シリコン基板から形成されている、
ことを特徴とする請求項1記載の紫外線発光装置の製造方法。
The mounting substrate is formed from a silicon substrate,
The method for manufacturing an ultraviolet light emitting device according to claim 1.
1つの仮想円の円周上において前記複数個の紫外線発光素子が等間隔で並んでいる、
ことを特徴とする請求項1又は2記載の紫外線発光装置の製造方法。
The plurality of ultraviolet light emitting elements are arranged at equal intervals on the circumference of one virtual circle,
3. The method for producing an ultraviolet light emitting device according to claim 1, wherein the ultraviolet light emitting device is produced.
前記複数個の紫外線発光素子は、6個の紫外線発光素子である、
ことを特徴とする請求項3記載の紫外線発光装置の製造方法。
The plurality of ultraviolet light emitting elements are six ultraviolet light emitting elements.
The method of manufacturing an ultraviolet light emitting device according to claim 3.
前記複数個の紫外線発光素子は、前記第1の分類領域の特性を有する紫外線発光素子と前記第2の分類領域の特性を有する紫外線発光素子とが、前記仮想円の円周上で交互に並んでいる、
ことを特徴とする請求項4記載の紫外線発光装置の製造方法。
In the plurality of ultraviolet light emitting elements, ultraviolet light emitting elements having the characteristics of the first classification region and ultraviolet light emitting elements having the characteristics of the second classification region are alternately arranged on the circumference of the virtual circle. Out
The method for manufacturing an ultraviolet light emitting device according to claim 4.
トータル光出力が少なくとも10mWである、
ことを特徴とする請求項1乃至5のいずれか一項に記載の紫外線発光装置の製造方法。
The total light output is at least 10 mW,
The method for manufacturing an ultraviolet light emitting device according to any one of claims 1 to 5.
前記実装基板が実装された配線基板を更に備え、
前記配線基板は、金属ベースプリント配線板である、
ことを特徴とする請求項1乃至6のいずれか一項に記載の紫外線発光装置の製造方法。
It further comprises a wiring board on which the mounting board is mounted,
The wiring board is a metal-based printed wiring board,
The method for manufacturing an ultraviolet light emitting device according to any one of claims 1 to 6.
複数個の紫外線発光素子と、前記複数個の紫外線発光素子が並列接続されて実装された実装基板と、を備える紫外線発光装置の製造方法であって、
前記複数個の紫外線発光素子の駆動電圧と光出力とをそれぞれ測定して、複数の駆動電圧範囲と複数の光出力範囲とに従って複数の分類領域に分類した分類マトリックスに分類する選別工程と、
前記分類マトリックスの1つの分類領域に属する紫外線発光素子のみから複数個の紫外線発光素子を選択して、前記実装基板に実装する実装工程と
を含み、
前記1つの分類領域は、前記複数の駆動電圧範囲における所定の駆動電圧範囲と、前記複数の光出力範囲における中心の光出力範囲とで、規定されている、
ことを特徴とする紫外線発光装置の製造方法。
A method of manufacturing an ultraviolet light emitting device comprising: a plurality of ultraviolet light emitting elements; and a mounting substrate on which the plurality of ultraviolet light emitting elements are mounted in parallel.
A selection step of measuring drive voltages and light outputs of the plurality of ultraviolet light emitting elements, respectively, and classifying into a plurality of classification regions according to a plurality of drive voltage ranges and a plurality of light output ranges,
A mounting step of selecting a plurality of ultraviolet light emitting elements from only the ultraviolet light emitting elements belonging to one classification region of the classification matrix and mounting on the mounting substrate,
The one classification region is defined by a predetermined drive voltage range in the plurality of drive voltage ranges and a central light output range in the plurality of light output ranges.
A method for manufacturing an ultraviolet light emitting device.
前記分類マトリックスにおける前記複数の駆動電圧範囲は、互いに異なる複数の範囲であり、その複数の範囲の各々は0.2Vの範囲であり、
前記分類マトリックスにおける前記複数の光出力範囲は、第1光出力範囲、前記第1光出力範囲より高い第2光出力範囲、および前記第2光出力範囲より高い第3光出力範囲であり、
前記第1光出力範囲の下限は、前記第1光出力範囲の上限に対して−15%の光出力差を有し、
前記第2光出力範囲の上限は、前記第2光出力範囲の下限に対して+15%の光出力差を有し、
前記第3光出力範囲の上限は、前記第3光出力範囲の下限に対して+15から18%の範囲内の光出力差を有する。
ことを特徴とする請求項1又は8記載の紫外線発光装置の製造方法。
The plurality of driving voltage ranges in the classification matrix are a plurality of different ranges, and each of the plurality of ranges is a range of 0.2V.
The plurality of light output ranges in the classification matrix are a first light output range, a second light output range higher than the first light output range, and a third light output range higher than the second light output range;
The lower limit of the first light output range has a light output difference of −15% with respect to the upper limit of the first light output range;
The upper limit of the second light output range has a light output difference of + 15% with respect to the lower limit of the second light output range;
The upper limit of the third light output range has a light output difference within a range of +15 to 18% with respect to the lower limit of the third light output range.
The method for producing an ultraviolet light emitting device according to claim 1 or 8.
前記分類マトリックスにおける前記複数の駆動電圧範囲は、8.0V以上8.2V未満の範囲と、8.2V以上8.4V未満の範囲と、8.4V以上8.6V未満の範囲と、8.6V以上8.8V未満の範囲と、8.8V以上9.0V未満の範囲と、9.0V以上9.2V未満の範囲と、9.2V以上9.4V未満の範囲と、9.4V以上9.6V未満の範囲と、9.6V以上9.8V未満の範囲と、9.8V以上10.0V未満の範囲とを含み、
前記分類マトリックスにおける前記複数の光出力範囲は、1.7mW以上2.0mW未満の範囲と、2.0mW以上2.3mW未満の範囲と、2.3mW以上2.7mWまたは2.645mW未満の範囲とを含む
ことを特徴とする請求項1又は8記載の紫外線発光装置の製造方法。
The plurality of driving voltage ranges in the classification matrix include a range of 8.0 V or more and less than 8.2 V, a range of 8.2 V or more and less than 8.4 V, a range of 8.4 V or more and less than 8.6 V, and 8. 6 V or more and less than 8.8 V, 8.8 V or more and less than 9.0 V, 9.0 V or more and less than 9.2 V, 9.2 V or more and less than 9.4 V, and 9.4 V or more Including a range of 9.6 V or less, a range of 9.6 V or more and less than 9.8 V, and a range of 9.8 V or more and less than 10.0 V,
The plurality of light output ranges in the classification matrix are a range from 1.7 mW to less than 2.0 mW, a range from 2.0 mW to less than 2.3 mW, and a range from 2.3 mW to 2.7 mW or less than 2.645 mW. The method for manufacturing an ultraviolet light emitting device according to claim 1, wherein:
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US7169123B2 (en) 1997-01-22 2007-01-30 Advanced Medical Optics, Inc. Control of pulse duty cycle based upon footswitch displacement
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192797A (en) * 2007-02-05 2008-08-21 Sony Corp Light source module, manufacturing method therefor, light source device and liquid crystal display
JP2010287685A (en) * 2009-06-10 2010-12-24 Panasonic Electric Works Co Ltd Led module
JP2012227397A (en) * 2011-04-20 2012-11-15 Sharp Corp Light source manufacturing method and light source
JP2013232458A (en) * 2012-04-27 2013-11-14 Mitsubishi Electric Corp Led selection device, led selection program, and led selection method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192797A (en) * 2007-02-05 2008-08-21 Sony Corp Light source module, manufacturing method therefor, light source device and liquid crystal display
JP2010287685A (en) * 2009-06-10 2010-12-24 Panasonic Electric Works Co Ltd Led module
JP2012227397A (en) * 2011-04-20 2012-11-15 Sharp Corp Light source manufacturing method and light source
JP2013232458A (en) * 2012-04-27 2013-11-14 Mitsubishi Electric Corp Led selection device, led selection program, and led selection method

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