TW201546901A - Plasma processing apparatus, method of manufacturing thin film transistor and storage medium - Google Patents

Abstract

Provided is a plasma processing apparatus capable of, in the process of manufacturing a thin film transistor, suppressing the occurrence of corrosion and at the same time patterning electrodes containing aluminum. A plasma processing apparatus (2) performs the plasma process on a substrate (F) formed with thin film transistors (4a, 4b); the processing vessel (21) in which the plasma process is performed is equipped with a carrier table (231) carrying the substrate (F). A vacuum evacuating unit (214) performs vacuum evacuation of the processing vessel (21), and hydrogen gas is supplied from the hydrogen gas supply unit (262) for plasma generation. A plasma generator (24) makes the gas into plasma for plasma generation and forms the patterned photoresist film on the upper side of the metal film containing aluminum, also, the substrate with the metal film etched is processed by the etching gas containing chlorine.

Description

Plasma processing device, manufacturing method of thin film transistor and memory medium

The present invention relates to a technique of performing plasma treatment on a metal film which is an electrode of a thin film transistor formed on a substrate.

For example, a thin film transistor (TFT: Thin Film Transistor) used in an FPD (Flat Panel Display) such as a liquid crystal display (LCD) is a gate electrode or a substrate on a glass substrate or the like. The gate insulating film, the semiconductor layer, and the like are patterned, and are formed by laminating them in order.

In the TFT, when a metal film containing aluminum or an alloy containing aluminum is used as a material for connecting a source electrode or a gate electrode of a semiconductor layer, there is a case where an etching gas containing chlorine is used. These electrodes or wirings (sometimes referred to collectively as electrodes) are patterned by "chlorine-based etching gas". However, in the photoresist used for patterning electrodes or patterning using a chlorine-based etching gas, chlorine remains, and in the process of transporting the substrate to the next stage, moisture and chlorine in the atmosphere are generated. The reaction is caused by the erosion (corrosion) of the electrode.

Here, in the cited document 1, the following technique is described After patterning the aluminum wiring of the semiconductor device on the semiconductor substrate using a chlorine-based etching gas, the photoresist pattern is ashed using an oxygen plasma containing moisture, whereby the photoresist pattern is attached to The chlorine on the surface of the aluminum wiring is removed together with gaseous hydrochloric acid (HCl).

In addition, in the cited document 1, it is described that "the process of ashing and removing the photoresist pattern by using a plasma containing oxygen (H) or hydrogen oxide of 1 oxygen (OH)" is removed. The point of chlorine attached to the photoresist pattern, but only an example of oxygen plasma to which moisture is added is described in the specification.

Further, in Citation 2, there is described a technique in which a source/drain electrode is formed by wet etching in a channel etching type TFT manufacturing process, and then an impurity semiconductor is performed by a chlorine-based etching gas. After the dry etching of the layer, the exposed surface of the amorphous germanium (a-Si) is treated with a water plasma, whereby a stable insulating layer is formed and the photoresist is removed. Further, it is also described that the point of chlorine which is a cause of erosion can be removed by exposure to water plasma.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 6-333924: Patent Application No. 1, Sections 0002 to 0004, 0027

[Patent Document 2] Japanese Laid-Open Patent Publication No. 2009-283919: Patent Application No. 4, No. 0062~0064, 0075

According to the technique described in the cited documents 1 and 2, the photoresist pattern is removed by the ashing treatment of the plasma, and the photoresist is not completely removed and the residue remains. Therefore, there is a case where a photoresist is removed as described above, which is less problematic in that a residue occurs and a stripping liquid which can remove the photoresist in a shorter time is used, in which case the ashing opportunity cannot be utilized. , for chlorine removal.

Further, in the method of adding water to the oxygen plasma or using the water plasma, it is difficult to sufficiently supply the active component for removing chlorine, and it is impossible to sufficiently remove the chlorine in terms of suppression of corrosion.

The present invention has been made in view of such circumstances, and an object thereof is to provide a plasma treatment capable of patterning an electrode including aluminum while suppressing the occurrence of erosion in a manufacturing process of a thin film transistor. A device, a method of manufacturing a thin film transistor, and a memory medium in which the method is stored.

The plasma processing apparatus of the present invention performs a plasma treatment on a substrate on which a thin film transistor is formed, and is characterized in that: a processing container is provided, and a mounting table on which a substrate is placed is provided, and the substrate is subjected to plasma treatment; a vacuum exhaust unit that evacuates the inside of the processing chamber; and a hydrogen supply unit that supplies hydrogen gas as a plasma generating gas to the processing chamber; a plasma generating unit for slurrying a plasma generating gas supplied into the processing container, wherein the substrate is formed with a patterned photoresist film on an upper layer side of a metal film containing aluminum. The metal film is etched by an etching gas containing chlorine.

The plasma processing apparatus may have the following features.

(a) An oxygen supply unit for supplying oxygen to the plasma generating gas is provided.

(b) The plasma treatment is carried out under a pressure range of 0.667 Pa or more and 13.3 Pa or less. Further, the mounting table is provided with a temperature adjusting unit that adjusts the substrate temperature to a temperature range of 25° C. or higher and 250° C. or lower in performing plasma processing.

(c) An etching gas supply unit that supplies an etching gas containing chlorine to the processing container in order to perform etching treatment of the metal film in the processing container before the plasma treatment The etching process of the metal film is performed by plasma-treating the etching gas supplied from the etching gas supply unit by the plasma generating unit. At this time, the etching treatment is performed under a pressure range of 0.667 Pa or more and 13.3 Pa or less. Further, the mounting table is provided with a temperature adjusting unit that adjusts the substrate temperature to a temperature range of 25° C. or higher and 120° C. or lower during the etching process.

(d) The plasma generating unit is provided with an antenna unit for generating an inductively coupled plasma.

According to the present invention, a metal film containing aluminum which is etched and treated using a chlorine-based etching gas is treated with a plasma of hydrogen gas, so that chlorine adhered to the metal film or the photoresist can be removed during the etching treatment. , thereby inhibiting the occurrence of erosion.

F‧‧‧Substrate

1‧‧‧Processing system

2, 2a ~ 2d ‧ ‧ plasma processing equipment

21‧‧‧ body container

214‧‧‧Vacuum exhaust mechanism

23‧‧‧Processing room

231‧‧‧mounting table

233‧‧‧heater

236‧‧‧DC power supply

24‧‧‧Antenna Department

25‧‧‧ sprinkler

261‧‧‧etching gas supply department

262‧‧‧ Hydrogen Supply Department

263‧‧‧Oxygen Supply Department

3‧‧‧Control Department

4a, 4b‧‧‧TFT

41‧‧‧ glass substrate

42‧‧‧gate electrode

43‧‧‧gate insulating film

44‧‧‧Semiconductor layer

45‧‧‧Electrode

45a‧‧‧Source electrode

45b‧‧‧汲electrode

46‧‧‧Photoresist film

47‧‧‧Interlayer insulating film

Fig. 1 is a longitudinal sectional side view showing an example of a TFT to which a processing (plasma treatment) according to an embodiment of the invention is applied.

Fig. 2 is a longitudinal sectional side view showing another example of a TFT to which the above-described processing is applied.

FIG. 3 is a view showing an example of a process of wiring the source/drain electrodes.

Fig. 4 is a plan view showing a processing system for performing etching processing and processing of the electrodes.

Fig. 5 is a longitudinal sectional side view showing a plasma processing apparatus provided in the above processing system.

Fig. 6 is a flow chart showing the flow of processing executed by the plasma processing apparatus.

Fig. 7 is a schematic view showing a state in the vicinity of an electrode after the etching treatment.

[Fig. 8] shows the state of the vicinity of the electrode after the processing Figure.

Fig. 9 is a plan view showing another configuration example of a processing system for performing etching processing and processing of the electrodes.

A configuration example of a substrate F to which plasma treatment according to an embodiment of the present invention is applied will be described with reference to Figs. 1 to 2 . 1 and 2 show an enlarged longitudinal section of the TFTs 4a and 4b formed on the surface of the glass substrate 41 as the substrate F.

Fig. 1 shows a TFT 4a of a gate-type configuration under the channel etching type. In the TFT 4a, a gate electrode 42 is formed on the glass substrate 41, and a gate insulating film 43 made of a SiN film or the like is provided thereon, and an a-Si or n-doped surface is laminated on the upper layer thereof. A semiconductor layer 44 of an oxide semiconductor. Next, a metal film is formed on the layer side of the semiconductor layer 44, and the metal film is etched to form a source electrode 45a and a drain electrode 45b.

After the source electrode 45a and the drain electrode 45b are formed, the TFT 4a forms a channel portion by etching the surface of the n+ doped semiconductor layer 44, and then, for example, SiN is formed to protect the surface. A passivation film (not shown) made of a film. Further, the source electrode 45a or the drain electrode 45b is connected to a transparent electrode (not shown) such as ITO (Indium Tin Oxide) via a contact hole formed on the surface of the passivation film, and the transparent electrode is connected to the driving circuit. Or drive the electrodes to make the FPD.

Further, Fig. 2 is a TFT 4b having a gate type structure. In the TFT 4b, a semiconductor layer 44 of LTPS (Low Temperature Poly-silicon) is provided on the glass substrate 41, and a gate electrode 42 is provided on the upper layer side via the gate insulating film 43, and then a SiN film or the like is formed. An interlayer insulating film 47 is formed. A contact film is formed in the interlayer insulating film 47 to form a metal film, and an etching process is performed to form a source electrode 45a and a drain electrode 45b.

The formation of the subsequent passivation film or the formation of the subsequent transparent electrode (none of which is shown) is the same as that of the case of the TFT 4a, and thus the description thereof will be omitted.

In the TFTs 4a and 4b which have been described above, the metal film for forming the source electrode 45a and the drain electrode 45b is formed by sequentially laminating a titanium film, an aluminum film, or a titanium film from the lower layer side. A metal film of Ti/Al/Ti structure. As shown in FIG. 1 and FIG. 2, the surface of the metal film is patterned by the photoresist film 46, using chlorine gas (Cl ₂ ) or acid boron chloride (BCl ₃ ), carbon tetrachloride (CCl ₄ ). The source electrode 45a and the drain electrode 45b are formed by etching the chlorine-based etching gas.

In this manner, when the electrode 45 (the source electrode 45a and the drain electrode 45b) is patterned using a chlorine-based etching gas, as shown in FIG. 7, chlorine is adhered to the photoresist film 46. Further, in the electrode 45 as the metal film to be etched, chlorine or aluminum chloride which is a compound of chlorine and aluminum is also adhered. In this way, when the TFTs 4a and 4b in a state in which chlorine is adhered to the atmosphere are transported for the subsequent peeling of the photoresist film 46, the film is adhered to the photoresist film. The chlorine of the 46 or the electrode 45 reacts with moisture in the atmosphere to form hydrochloric acid, which is a cause of corrosion of the electrode 45.

Therefore, conventionally, it is necessary to perform a water washing treatment for washing the substrate F on which the TFTs 4a and 4b are formed before the peeling of the photoresist film 46. Further, as a dry treatment for suppressing the occurrence of erosion, a method of plasma-removing oxygen or a gas in which carbon tetrafluoride (CF ₄ ) is added to oxygen to remove chlorine may be employed. However, when oxygen alone is used, the effect of suppressing erosion is small, and on the other hand, when carbon tetrafluoride is added, the problem of dust generated by the formation of aluminum oxide (AlO) or aluminum fluoride (AlF) becomes large, All are practical topics.

Therefore, in the embodiment of the present invention, the following plasma treatment (hereinafter referred to as "processing") is performed on the substrate F after the electrode 45 is formed by etching the metal film using a chlorine-based etching gas. Plasmad hydrogen is used to remove chlorine.

Hereinafter, the configuration of the processing system 1 for performing the processing and the etching process of the preceding stage, and the plasma processing apparatus 2 provided in the processing system 1 will be described with reference to FIGS. 4 and 5.

Before explaining the specific configuration of the processing system 1, referring to Fig. 3, an outline of the process for forming the electrode 45 will be described in advance.

As shown in FIG. 1 and FIG. 2, a metal film (P1) is formed by sequentially laminating a titanium film-aluminum film-titanium film on the surface of the substrate F on which the laminate on the lower layer side of the electrode 45 is formed by sputtering. Next, a photoresist is applied to the surface of the metal film to form a photoresist film (P2). After patterning the photoresist film (P3), the metal film is etched using a chlorine-based etching gas. (P4). Then, the processing using hydrogen gas is performed to remove chlorine (P5) adhering to the surface of the electrode 45 or the photoresist film 46, and then the photoresist stripping liquid is supplied to the surface of the substrate F to remove the photoresist film 46 (P6). .

In the formation process of the electrode 45 described above, in the processing system 1 described below, the etching process (P4) of the metal film surrounded by a broken line in FIG. 3 and the processing by hydrogen (P5) are performed. .

As shown in the plan view of Fig. 4, the processing system 1 is configured as a multi-chamber vacuum processing system that performs the etching process and the processing described above on the substrate F.

The processing system 1 includes carriers C1 and C2 that are placed on a carrier mounting portion (not shown), and accommodates a plurality of substrates F; and a first transport mechanism 11 that can be used in an atmospheric environment. The substrate F is transferred between the load lock chambers 12 in which the internal pressure environment is switched between the vacuum environments. The load lock chambers 12 are stacked, for example, in two stages. In each of the load lock chambers 12, a rack 122 that holds the substrate F or a positioner 121 that adjusts the position of the substrate F is provided.

In the subsequent stage of the load lock chamber 12, a second transfer mechanism 14 is provided, and for example, a vacuum transfer chamber 13 having a square shape in plan view is connected. In the vacuum transfer chamber 13, in addition to the side wall surface to which the lock chamber 12 is attached, the other three side wall surfaces are connected to the plasma processing apparatuses 2a to 2c of the present embodiment.

Moreover, the opening of the lock chamber 12, the load lock chamber 12, and the vacuum transfer chamber 13 are loaded on the first transfer mechanism 11 side, and the vacuum transfer is performed. The gate valve G1 to G3 are interposed between the chamber 13 and each of the plasma processing apparatuses 2a to 2c, and the gate valve is configured to hermetically seal the load lock chamber 12 or the vacuum transfer chamber 13, and to perform switching.

The plasma processing apparatuses 2a to 2c internally perform etching processing or subsequent processing on the substrate F.

The plasma processing apparatus includes a main body container 21 made of an electrically conductive material such as aluminum anodized on the inner wall surface, and formed into a rectangular tube shape, which is airtight and electrically grounded. For example, the main body container 21 has a size of 2.9 m on one side and a size of about 3.1 m on the other side, and can process, for example, a rectangular substrate F having a size of 2,200 mm on one side and about 2,500 mm on the other side.

The internal space of the main body container 21 is vertically partitioned by the dielectric wall 2, and the upper side thereof is formed as an antenna room in which the antenna portion 24 for generating inductively coupled plasma (ICP) is disposed. 241, the lower side is formed as a processing chamber 23 (internal space of the processing container) for performing the processing of the substrate F. The dielectric wall 22 is made of ceramic such as alumina (Al ₂ O ₃ ) or quartz.

On the lower surface side of the dielectric wall 22, a shower head 25 for supplying an etching gas or a processing gas (collectively referred to as "processing gas") to the processing chamber 23 is embedded. The shower head 25 is made of a metal as a conductive material, for example, aluminum whose surface is anodized, and is electrically grounded via a ground line (not shown).

On the lower surface of the head 25, a plurality of gas discharge holes 251 for discharging the processing gas to the lower side toward the processing chamber 23 are provided. On the other hand, in the central portion of the dielectric wall 22 in which the head 25 is fitted, the gas supply pipe 26 is connected so as to communicate with the space inside the head 25. The gas supply pipe 26 extends outward through the top of the main body container 21, and is branched in the middle thereof, and is connected to the etching gas supply unit 261, the hydrogen gas supply unit 262, and the oxygen supply unit 263, respectively.

The etching gas supply unit 261 supplies a chlorine-based etching gas used for etching the metal film. The hydrogen supply unit 262 supplies hydrogen gas as a plasma generating gas in order to process the substrate F after the etching process. The oxygen supply unit 263 supplies oxygen supplied to the plasma generating gas during the processing. Each of the gas supply units 261 to 263 is provided with a supply source of various processing gases, a flow rate adjusting unit, and the like. The processing gas supplied from the gas supply units 261 to 263 is supplied to the shower head 25 via the gas supply pipe 26, and then diffused in the space of the shower head 25, and is supplied to the processing chamber 23 through the respective gas discharge holes 251. .

The antenna portion 24 is disposed in the antenna chamber 241 on the upper side of the dielectric wall 22. The antenna unit 24 is constituted by an antenna line (which is made of, for example, copper), and forms a uniform induced electric field in the processing chamber 23. Therefore, a plurality of substrates F are disposed. The area which is horizontally disposed in the processing chamber 23) (as an example of the arrangement method of the antenna unit 24, see Japanese Patent Laid-Open Publication No. 2013-162035).

The antenna unit 24 is connected to the high-frequency power source 273 via the power supply unit 271 or the matching unit 272, and is supplied with, for example, a frequency from the high-frequency power source 273. It is a high frequency power of 13.56 MHz. Thereby, an induced electric field is generated in the processing chamber 23, and the processing gas supplied from the head 25 is plasmad by the induced electric field. The antenna unit 24, the power supply unit 271, the high-frequency power source 273, and the like correspond to the plasma generating unit of the present embodiment.

In the processing chamber 23, the mounting table 231 of the substrate F is provided so as to face the antenna portion 24 with the dielectric wall 22 interposed therebetween. The mounting table 231 is made of a conductive material such as aluminum whose surface is anodized. At the mounting table 231, a high-frequency power source 238 for applying bias current to sink the ions in the plasma to the substrate F is connected via the matching unit 237. The high-frequency power source 238 can apply, for example, high-frequency power having a frequency of 6 MHz to the mounting table. Further, the mounting table 231 is provided with a heater 233 which is configured by, for example, a resistance heating element and is connected to the DC power source 236, and can heat the mounting table 231 based on the temperature detection result of the temperature detecting unit (not shown). Substrate F. Further, in the mounting table 231, a refrigerant flow path (not shown) through which the refrigerant flows is formed, and an excessive temperature rise of the substrate F can be suppressed.

Further, in the processing chamber 23 that is in a vacuum environment, since the temperature of the substrate F is adjusted by the heater 233 or the refrigerant flow path, the back surface of the substrate F on the mounting table 231 is passed through a gas flow path (not shown). It is supplied with helium as a gas for heat transfer.

Further, the substrate F placed on the mounting table 231 is sucked and held by an electrostatic chuck (not shown).

The mounting table 231 is housed in the lid body 232 of the insulating system and supported by the hollow pillar 235. Pillar 235, through this The bottom surface of the body container 21 is connected to a lifting mechanism (not shown) to move the mounting table 231 in the vertical direction. A bellows 234 is provided between the lid body 232 accommodating the mounting table 231 and the bottom of the main body container 21, and the bellows is used to surround the pillar 235 and maintain the airtight state of the body container 21. Further, on the side wall of the processing chamber 23, a loading/unloading port 211 for loading and unloading the substrate F and a gate valve 212 (gate valve G3 of FIG. 4) for opening and closing are provided.

At the bottom of the processing chamber 23, a vacuum exhaust mechanism 214 such as a vacuum pump is connected via an exhaust pipe 213. By the vacuum evacuation mechanism 214, the inside of the processing chamber 23 can be exhausted, and during the execution of the etching process or the processing, the inside of the processing chamber 23 is adjusted to a predetermined vacuum environment. The exhaust pipe 213 connected to the vacuum exhaust mechanism 214 corresponds to the vacuum exhaust unit of the present embodiment.

As shown in FIGS. 4 and 5, the processing system 1 and the plasma processing apparatus 2 having the above-described configuration are connected to the control unit 3 that integrally controls the overall operation. The control unit 3 is composed of a computer including a CPU and a memory unit (not shown), and a program is recorded in the memory unit, and the program is incorporated in the processing system 1 or the plasma processing device 2, and In other words, the substrate F taken out from the carriers C1 and C2 is carried into the respective plasma processing apparatuses 2 (2a to 2c) via the load lock chamber 12 or the vacuum transfer chamber 13, and various processing gases are supplied in a predetermined order to perform etching of the metal film. The processing or subsequent processing is performed to return the processed substrate F to the step (command) group of the operations of the original carriers C1 and C2. The program is stored in, for example, a hard disk, a compact disc, a magneto-optical disc, a memory card, etc. Recall the media, and these are installed on the computer.

The operation of the processing system 1 and the plasma processing apparatus 2 having the above configuration will be described with reference to the flowchart of Fig. 6 .

Initially, the substrate F to be processed is taken out from the carriers C1 and C2, and transported to the load lock chamber 12 or the vacuum transfer chamber 13 (starting). Then, the gate valve 212 of the plasma processing apparatuses 2a to 2c for performing the processing of the substrate F is opened, the substrate F is carried into the processing chamber 23, the substrate F is placed and adsorbed and fixed on the mounting table 231, and the mounting table 231 is adjusted. Height position (step S101).

When the transfer arm of the second transfer mechanism 14 is retracted from the processing chamber 23 and the gate valve 212 is closed, the pressure in the processing chamber 23 is adjusted to the pressure at the time of the etching process (step S102). In this example, in the etching process, the pressure in the processing chamber 23 is adjusted to a range of 0.667 to 13.3 Pa (5 to 100 mTorr) which is lower than the pressure at the time of the conventional etching treatment, and preferably 0.667. A value in the range of 4.00 Pa (5 to 30 mTorr).

Further, the temperature of the substrate F is adjusted in parallel with the pressure adjustment, and is adjusted to a range of 25 to 120 ° C, preferably a value in the range of 25 to 80 ° C.

After the temperature of the substrate F in the processing chamber 23 is adjusted, the etching gas supply unit 261 has a range of, for example, 2000 to 6000 ml/min (0 ° C, 1 air pressure, the same applies hereinafter), preferably 3000 to 5000 ml. / The flow rate in the range is supplied to the chlorine-based etching gas. At this time, the inside of the processing chamber 23 is exhausted by the vacuum exhaust mechanism 214, and the inside of the processing chamber 23 is adjusted to a vacuum environment of a predetermined pressure. Further, high-frequency power is supplied from the high-frequency power source 273 to each antenna unit 24, and the ICP is generated. The etching process of the metal film is performed (step S103). At this time, on the mounting table 231, bias power is applied from the high-frequency power source 238, and ions in the plasma are sucked to perform anisotropic etching. In addition, when the anisotropic etching is not performed, the application of the bias power is not performed, and the setting of the high-frequency power source 238 on the mounting table 231 side is omitted.

After the etching process is performed only for the time set in advance as described above, the supply of the etching gas and the supply of the electric power to the antenna unit 24 are stopped. The electrode 45 formed by the etching treatment and the photoresist film 46 on the upper layer side are adhered with chlorine contained in the etching gas or chlorination caused by the reaction of chlorine and aluminum as described with reference to FIG. aluminum.

Therefore, the substrate F to which chlorine or aluminum is attached is processed by using the plasma-formed hydrogen gas.

Before starting the processing, the pressure in the processing chamber 23 after the etching treatment is adjusted to a range of 0.667 to 13.3 Pa (5 to 100 mTorr), preferably a value in the range of 0.667 to 4.00 Pa (5 to 30 mTorr). Step S104). Further, when compared with the etching treatment, the pressure at the time of processing is set to a number of high pressures. Further, the temperature of the substrate F is adjusted in parallel with the pressure adjustment, and is adjusted to a range of 25 to 250 ° C, preferably a value in the range of 80 to 250 ° C.

After the temperature of the substrate F in the processing chamber 23 is adjusted, the hydrogen supply unit 262 is supplied as a plasma gas at a flow rate in the range of, for example, 1000 to 5000 ml/min, preferably 2000 to 4000 ml/min. Hydrogen. Further, the oxygen supply unit 263 supplies oxygen at a flow rate in the range of, for example, 0 to 5000 ml/min, preferably 0 to 4000 ml/min. (hydrogen/oxygen supply ratio; 1/0 to 1/1). Then, high-frequency power is supplied from the high-frequency power source 273 to each of the antenna units 24, and ICP is generated to process the substrate F (step S105).

In this way, by setting the gas in which hydrogen and oxygen are mixed as the gas for plasma generation, the ratio of existence of hydrogen to oxygen can be freely adjusted as compared with the case of plasma-forming the gas containing moisture.

Further, at this time, the application of the bias power from the high-frequency power source 238 can also be stopped.

As shown in Fig. 8, by supplying hydrogen activated by the plasma, chlorine or aluminum chloride adhering to the photoresist film 46 or the electrode 45 reacts with hydrogen atoms to form hydrogen chloride from the photoresist film. 46 or electrode 45 is removed. Further, by adding oxygen to the plasma generating gas, a part of the surface of the photoresist film 46 is oxidized (burned) and removed, whereby it can be sucked further to the inner side than the surface of the resist film 46. The chlorine is exposed and reacts with hydrogen to remove it.

Here, it was experimentally confirmed that in the present processing using ICP, the processing chamber can be used in comparison with the conventional etching treatment (for example, 13.3 to 66.7 Pa (100 to 500 mTorr) in the case of ICP). The pressure environment within 23 is set to be a relatively low-pressure environment to achieve better chlorine removal. Although the reason for obtaining such a result is not clear, it is considered that the internal energy of the gas in the processing chamber 23 may be reduced or the application of the bias power may not be performed by lowering the pressure, as compared with, for example, RIE (Reactive Ion). Etching) can reduce the energy of hydrogen or oxygen colliding with the surface of the photoresist film 46.

That is, when hydrogen or oxygen collides with the photoresist film 46, the energy is higher. When it is large, chlorine which is affected by the collision enters the inside of the photoresist film 46, and prevents the chlorine from being efficiently removed. In view of this, it is assumed that chlorine or aluminum chloride may react with hydrogen, and that hydrogen is supplied with energy sufficient to be detached from the photoresist film 46 to effectively remove chlorine from the photoresist film 46.

After the processing is performed only for a predetermined time, the supply of hydrogen gas and oxygen and the supply of electric power to the antenna unit 24 are stopped.

Then, after the pressure in the processing chamber 23 is adjusted so that the substrate F is carried out to the vacuum transfer chamber 13, the gate valve 212 is opened, the transfer arm of the second transfer mechanism 14 is moved in, and the substrate F is carried out, thereby ending the plasma processing apparatus. The processing operation of the substrate F of 2 (step S106, end).

Then, the substrate F is transported in a path opposite to the time of loading, and the substrate F is stored in the original carriers C1 and C2. After the processing of the substrate F in the carriers C1 and C2 is completed, the carriers C1 and C2 are transported toward the apparatus for peeling off the photoresist (P6 of Fig. 3).

According to the plasma processing apparatus 2 of the present embodiment, the following effects are obtained. Since the electrode 45 containing aluminum etched using the chlorine-based etching gas is treated with a plasma of hydrogen gas, chlorine adhering to the electrode 45 or the photoresist film 46 can be removed during the etching process, thereby Suppress the occurrence of erosion.

Here, in the processing system 1 shown in FIG. 4, both the etching process and the processing of the metal film can be performed in each of the plasma processing apparatuses 2a to 2c. On the other hand, in the processing system 1a illustrated in FIG. 9, an etching processing special etching apparatus using a chlorine-based etching gas is separately provided. 20 and an example of a plasma processing apparatus 2d dedicated to processing. In this case, the productivity of the entire processing system 1a can be improved by increasing the number of apparatuses 20 and 2d in which the processing time is increased during the etching process or the processing.

Moreover, in the mounting table 231 of the plasma processing apparatus 2 shown in FIG. 5, the high frequency power supply for suction can also be connected. In this case, for example, during the etching process, high frequency power is supplied to the mounting table 231, and the plasma etching gas is sucked. Further, in the subsequent processing, when the high-frequency power is continuously supplied in the same manner as in the etching process, the chlorine removal effect can be improved by reducing the high-frequency power for suction or stopping the supply thereof. .

Further, the processing is not limited to the case where oxygen is added to hydrogen gas, and it may be carried out using only hydrogen gas. Further, in the processing gas (hydrogen gas or a gas in which oxygen is added to hydrogen gas), an inert gas such as argon may be added as needed.

In addition, the electrode 45 which is etched by the chlorine-based etching gas is not limited to the Ti/Al/Ti structure, and may be a single aluminum electrode 45 or an aluminum alloy such as AlNd.

2(2a~2c)‧‧‧ Plasma processing equipment

3‧‧‧Control Department

21‧‧‧ body container

22‧‧‧ dielectric wall

23‧‧‧Processing room

24‧‧‧Antenna Department

25‧‧‧ sprinkler

26‧‧‧ gas supply pipe

211‧‧‧ Move in and out

212‧‧‧ gate valve

213‧‧‧Exhaust pipe

214‧‧‧Vacuum exhaust mechanism

231‧‧‧mounting table

232‧‧‧ cover

233‧‧‧heater

234‧‧‧ Bellows

235‧‧‧ pillar

236‧‧‧DC power supply

237‧‧‧matcher

238‧‧‧High frequency power supply

241‧‧‧Antenna room

251‧‧‧ gas discharge hole

261‧‧‧etching gas supply department

262‧‧‧ Hydrogen Supply Department

263‧‧‧Oxygen Supply Department

271‧‧‧Power Supply Department

272‧‧‧matcher

273‧‧‧High frequency power supply

F‧‧‧Substrate

Claims (16)

A plasma processing apparatus which performs plasma processing on a substrate on which a thin film transistor is formed, and is characterized in that: a processing container is provided, and a mounting table on which a substrate is placed is provided, and the substrate is subjected to plasma treatment; a gas portion that evacuates the inside of the processing container; a hydrogen supply unit that supplies hydrogen gas as a plasma generating gas to the processing chamber; and a plasma generating unit that supplies the plasma to the processing container The substrate is plasma-formed, and the substrate is formed on the upper layer side of the metal film containing aluminum, and a patterned photoresist film is formed, and the metal film is etched by an etching gas containing chlorine. . A plasma processing apparatus according to the first aspect of the invention, further comprising: an oxygen supply unit for supplying oxygen to the plasma generating gas. The plasma processing apparatus according to claim 1 or 2, wherein the plasma treatment is performed under a pressure range of 0.667 Pa or more and 13.3 Pa or less. The plasma processing apparatus according to any one of claims 1 to 3, wherein the mounting table is provided with a temperature adjusting unit that adjusts the substrate temperature to 25 ° C during plasma processing. Above, below 250 °C Temperature range. The plasma processing apparatus according to any one of claims 1 to 4, further comprising: an etching gas supply unit that performs etching treatment of the metal film in the processing container before the plasma processing An etching gas containing chlorine is supplied into the processing chamber, and the etching gas supplied from the etching gas supply unit is plasmad by the plasma generating unit to perform etching treatment of the metal film. The plasma processing apparatus according to claim 5, wherein the etching treatment is performed under a pressure range of 0.667 Pa or more and 13.3 Pa or less. The plasma processing apparatus according to claim 5, wherein the mounting stage is provided with a temperature adjusting unit that adjusts the substrate temperature to 25° C. or higher and 120° C. or lower during the etching process. Temperature range. The plasma processing apparatus according to any one of claims 1 to 7, wherein the plasma generating unit is provided with an antenna unit for generating an inductively coupled plasma. A method for producing a thin film transistor, comprising: forming a patterned photoresist film on an upper layer side of a metal film containing aluminum, and arranging etching in the processing container by containing chlorine Gas coming a process of etching a substrate on which the metal film is etched; a process of evacuating the inside of the processing container, supplying hydrogen gas as a plasma generating gas to the processing container; and supplying electricity to the processing container The slurry is produced by plasma-oxidizing the gas to remove the chlorine attached to the substrate. The method for producing a thin film transistor according to claim 9, which comprises the step of adding oxygen to the gas for generating the plasma. The method for producing a thin film transistor according to claim 9 or 10, wherein the process of removing chlorine adhering to the substrate is performed under a pressure range of 0.667 Pa or more and 13.3 Pa or less. The method for producing a thin film transistor according to any one of claims 9 to 11, wherein the step of removing the chlorine adhering to the substrate is to adjust the temperature of the substrate to a temperature of 25 ° C or higher and 250 ° C or lower. The scope is carried out. The method for producing a thin film transistor according to any one of claims 9 to 12, wherein the project of arranging the substrate to be etched in the processing container includes: a metal film to be contained in aluminum a process in which a substrate having a patterned photoresist film is carried into the processing container on the upper layer side; vacuum evacuation is performed in a processing container into which the substrate is carried, and etching containing chlorine is supplied into the processing container Gas engineering; and The etching gas supplied into the processing container is plasma-treated to perform the etching process of the metal film. The method for producing a thin film transistor according to claim 13, wherein the etching treatment is performed under a pressure range of 0.667 Pa or more and 13.3 Pa or less. The method for producing a thin film transistor according to claim 13 or 14, wherein the etching treatment is performed under a temperature range in which the substrate temperature is adjusted to 25 ° C or more and 120 ° C or less. A memory medium storing a computer program used in a plasma processing apparatus for performing plasma processing on a substrate on which a thin film transistor is formed, the memory medium, characterized in that the program is programmed to execute a patent application scope The method for producing a thin film transistor according to any one of the items 9 to 15.