KR101938794B1 - Apparatus for plasma etching a metal layer and method of plasma-etching a metal layer - Google Patents

Apparatus for plasma etching a metal layer and method of plasma-etching a metal layer Download PDF

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KR101938794B1
KR101938794B1 KR1020160067528A KR20160067528A KR101938794B1 KR 101938794 B1 KR101938794 B1 KR 101938794B1 KR 1020160067528 A KR1020160067528 A KR 1020160067528A KR 20160067528 A KR20160067528 A KR 20160067528A KR 101938794 B1 KR101938794 B1 KR 101938794B1
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plasma
source module
etching
plasma etching
linear
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KR1020160067528A
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KR20170135507A (en
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홍문표
장진녕
김보성
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고려대학교 세종산학협력단
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Priority to KR1020160067528A priority Critical patent/KR101938794B1/en
Priority to PCT/KR2017/005652 priority patent/WO2017209496A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A plasma etching apparatus for a metal thin film includes a process chamber for providing a process space in which a plasma etching process is performed, a support disposed in the process space for supporting a target, a process chamber connected to the process chamber, A linear plasma source module disposed at an upper portion of the process chamber for converting a process gas supplied into the process space into plasma, and a linear plasma source module disposed above the linear plasma source module, Further comprising the step of evacuating the etch byproducts generated in the plasma etch process to the outside of the process chamber, wherein the etch byproduct generated during the etch process is vaporized, Plasma etching of thin films .

Description

TECHNICAL FIELD [0001] The present invention relates to a plasma etching apparatus for a metal thin film and a plasma etching method for a metal thin film,

The present invention relates to a plasma etching apparatus for a metal thin film and a plasma etching method for a metal thin film, and more particularly, to a plasma etching apparatus for a metal thin film capable of uniformly etching a metal thin film having a large area using an ECR plasma source, And an etching method.

In the display manufacturing process, in order to manufacture a high-resolution large-sized display with a UHD level or higher, in particular, an AMOLED panel in which multiple wiring is essential, a wiring of the Cu electrode is required so that the width of the electrode wiring is narrowed and accordingly high conductivity is secured. Further, in order to achieve a good profile in etching uniformity and more precise critical dimension (CD) control, it is required to control the etching process more strictly.

A metal wiring is formed by patterning a substrate made of large area glass or plastic and a metal film formed on the substrate. In this case, in order to perform patterning with a metal wiring having a width of 1 to 2 탆, a wet etching process requires a dry etching process using plasma.

However, a halogen gas such as Chlorine (Cl) which is used as a conventional metal dry etching gas, produces an etching product in the form of CuClx (x is 1 to 3) solid or liquid at room temperature after reaction with copper . Thus, the etch byproduct must be vaporized to remove the etch byproduct from the substrate.

In order to vaporize the etching by-product, the etching by-product is heated to a temperature of 200 ° C or higher even at a low pressure of 1.5 mTorr or lower. For this purpose, it is necessary to supply a separate thermal energy. However, the copper dry etching technology based on the supply of additional thermal energy, which has been studied so far, can not be applied to the mass production process of a large-area panel, and new process and equipment development is required.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma etching apparatus for a metal thin film capable of effectively forming metal wiring by patterning a metal thin film formed on a large area substrate.

An object of the present invention is to provide a plasma etching method of a metal thin film which can effectively form metal wiring by patterning a metal thin film formed on a large area substrate.

According to an aspect of the present invention, there is provided a plasma etching apparatus for a thin metal film, including: a process chamber for providing a process space in which a plasma etching process is performed; a support disposed in the process space for supporting a target object; A linear ECR plasma source module disposed above the process chamber for plasmaizing the process gas supplied into the process space and a linear ECR plasma source module disposed on the linear ECR plasma source module, And a radiation source module for irradiating the object with radiation to irradiate the object to vaporize etch byproducts generated during the plasma etching process.

In one embodiment of the present invention, the support portion and the linear ECR plasma source module are relatively linearly moved to perform a plasma etching process using a scanning method.

In one embodiment of the present invention, the linear ECR plasma source module can extend in the major axis direction and linearly move in the minor axis direction.

In one embodiment of the present invention, the radiation source module may include a light source for generating a laser or ultraviolet light, and a window for irradiating the radiation emitted from the light source toward the target object.

In one embodiment of the present invention, a pumping unit disposed adjacent to the linear ECR plasma source module and communicating with the process space and exhausting etch by-products generated in the plasma etching process may be further provided.

According to an aspect of the present invention, there is provided a method of plasma etching a thin metal film, the method comprising: providing an object on a support provided in a process chamber for providing a process space; Thereafter, a process gas is supplied into the process space, and the process gas supplied into the process chamber is exposed to the linear ECR plasma source module to generate plasma. A plasma etching process is performed in which the object is etched using the plasmaized process gas. In the step of etching the object, the object is exposed to radiation to vaporize the etch byproducts generated during the plasma etching process.

In one embodiment of the present invention, the support portion and the linear ECR plasma source module are relatively linearly moved to perform a plasma etching process using a scanning method.

In an embodiment of the present invention, the etch by-products generated in the plasma etching process and evolved may be exhausted to the outside of the process chamber.

The plasma etching apparatus according to embodiments of the present invention includes a linear ECR plasma source module and a radiation source module so that a separate heat source for vaporizing the etch byproduct can be omitted. Further, by controlling the energy of the emitted light generated by the radiation source module, the etching by-product can be easily vaporized from the object depending on the kind of the etching by-product.

Further, the linear ECR plasma source module may extend the length of the linear ECR plasma source module in the major axis direction (X direction). Accordingly, as the size of the substrate or the object is increased, the size of the linear ECR plasma source module in the major axis direction can be increased, so that it can be advantageous to cope with a substrate to be enlarged.

The linear ECR plasma source module and the support for supporting the object move relatively linearly so that the plasma etching apparatus can etch the object plural times in the scanning direction in the short axis direction.

1 is a cross-sectional view illustrating a plasma etching apparatus for a metal thin film according to an embodiment of the present invention.
FIG. 2 is a perspective view illustrating the linear ECR plasma source module of FIG. 1. FIG.
3 is a graph showing the possible vaporization rates of etch byproducts versus process pressure for the linear ECR plasma source module and the IPC plasma source module of FIG.
4 is a cross-sectional view illustrating a plasma etching apparatus for a metal thin film according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. In the accompanying drawings, the sizes and the quantities of objects are shown enlarged or reduced from the actual size for the sake of clarity of the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprise", "comprising", and the like are intended to specify that there is a feature, step, function, element, or combination of features disclosed in the specification, Quot; or " an " or < / RTI > combinations thereof.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Plasma etching system of metal thin film

1 is a cross-sectional view illustrating a plasma etching apparatus for a metal thin film according to an embodiment of the present invention. FIG. 2 is a perspective view illustrating the linear ECR plasma source module of FIG. 1. FIG. 3 is a graph showing the possible vaporization rates of etch byproducts versus process pressure for the linear ECR plasma source module and the IPC plasma source module of FIG.

1, a plasma etching apparatus 100 for a metal thin film according to an exemplary embodiment of the present invention includes a process chamber 110, a support 120, a gas supply unit 130, a linear ECR plasma source module 140, And a radiation source module 150. The plasma etching apparatus 100 may be applied to a process of forming a metal wiring by etching a target object such as a metal thin film formed of a metal such as copper formed on a substrate.

The process chamber 110 provides a processing space 115 in which a plasma etching process is performed. The process chamber 110 may be made of a ceramic material having excellent plasma resistance to plasma.

The support portion 120 is disposed in the processing space 115. For example, the support portion 120 may be disposed at a lower portion inside the processing space 115. The support 120 is provided to support a target object. In addition, the support 120 may be mechanically connected to a driving unit (not shown) so as to linearly move. The support portion 120 may be linearly moved by a driving method such as a belt drive, a chain drive, a cylinder drive, or the like.

The gas supply unit 130 is connected to the process chamber 110. For example, the gas supply 130 may be disposed adjacent to the linear ECR plasma source module 114 at the top of the process chamber 110. The gas supply unit 130 is provided to supply the process gas to the process space 115. The process gas may be, for example, an etch gas such as chlorine gas. That is, when the metal thin film is made of copper, the process gas can use chlorine gas as an etching gas.

The gas supply unit 130 includes a gas reservoir (not shown), a gas reservoir (not shown) connecting the gas reservoir and the process chambers (not shown), and a gas supply line (Not shown) for pumping the liquid to the inside of the chamber. A detailed description of the gas supply unit 130 will be omitted.

The linear ECR plasma source module 140 is disposed on one side of the process chamber 110, for example, on the upper side. The linear ECR plasma source module 140 is provided to plasmaize the process gas supplied into the process space 115. The linear ECR plasma source module 140 will be described later with reference to FIG.

The light source module 150 is disposed on top of the linear ECR plasma source module 140. For example, the light source module 150 may be disposed to cover the linear ECR plasma module module 140.

The radiation source module 150 is provided to irradiate the object with radiation to vaporize etch byproducts generated during the plasma etching process. That is, while the plasma etching process is being performed, the radiation source module 150 irradiates the radiation toward the target, thereby causing the etching by-products generated during the plasma etching process to be vaporized and volatilized. As a result, the etch byproduct remains on the object, so that occurrence of defects in the plasma etching process can be suppressed.

At this time, the energy required to volatilize etching by-products generated when a metal thin film made of copper is subjected to plasma etching is as follows.

CuCl (s) - > CuCl (g): 2: 2 eV

Cu 3 Cl 3 (s)? Cu 3 Cl 3 (g): 1: 6 eV

Thus, laser light or ultraviolet light can be used to form a source of radiation having an energy higher than 2.2 eV. As such, a separate heat source for vaporizing the etch byproduct may be omitted. Further, by controlling the energy of the emitted light generated by the radiation source module 150, the etch by-products can be easily vaporized from the object depending on the type of the etch byproduct.

Referring to FIGS. 1 and 2, the linear ECR plasma source module 140 is disposed at an upper portion of the process chamber 110. The linear ECR plasma source module 140 has an elliptical shape. The linear ECR plasma source module 140 may extend in the major axis direction (X direction). Accordingly, as the size of the substrate or the object increases, the size of the linear ECR plasma source module 140 in the major axis direction can be increased, thereby providing an advantage of being able to cope with a substrate to be enlarged.

The linear ECR plasma source modules 140 may be provided in plural in the minor axis direction (Y direction). This makes it possible to easily cope with the size of the substrate to be enlarged.

Further, the linear ECR plasma source module 140 may be linearly moved in the short axis direction. For example, the linear ECR plasma source module 140 is connected to a driving unit (not shown) so as to be linearly movable. The linear ECR plasma source module 140 may be linearly driven by a driving method such as a belt driving, a chain driving, a cylinder driving, or the like.

This allows the plasma etching apparatus 110 to etch the object plural times in a scanning manner in the short axis direction by fixing the supporting portion 120 and moving the linear ECR plasma source module 140 linearly. Alternatively, when the linear ECR plasma source module 140 is fixed while the supporting part 120 is linearly moved, the plasma etching apparatus 100 may etch the object plural times in the short axis direction in a scanning manner, can do.

As a result, the support portion 120 and the linear ECR plasma source module 140 move relatively linearly, so that the plasma etching apparatus 100 can etch the object plural times in the scanning direction in the short axis direction.

The linear ECR plasma source module 140 includes a magnet 141, a plasma chamber 143 having an electromagnetic wave incident window 142, a tuner 146, and a resonator 147.

The resonator 147 is formed in an elliptical shape having a long track shape in one direction. A plurality of slots (not shown) are formed on the inner surface of the resonator 147 at regular intervals along the extended longitudinal direction.

The tuner 146 is coupled to one side of the resonator 147. The tuner 146 transmits the electromagnetic wave generated from the electromagnetic wave oscillator to the resonator 147.

The magnet 141 is composed of a plurality of magnets. The magnet 141 is disposed between the respective slots along the inner circumferential surface of the resonator 147. Thus, the magnet 141 is arranged in a long track shape as a whole.

The magnet 141 confines the electrons so that the generated electrons are not separated from the inside of the plasma chamber 143.

The plasma chamber 143 is arranged along the inner circumference of the magnet 114 and is arranged in a long track shape as a whole. The plasma chamber 143 is formed in such a manner that the electromagnetic wave introduced through the slots of the resonator 147 An electromagnetic wave incident window 141 is provided so that the electromagnetic wave incident window 141 can be incident.

Referring again to FIG. 1, the light source module 150 includes a light source 151 and a window 155.

The light source 151 generates laser or ultraviolet light.

The window 155 is provided so as to be irradiated with the radiation light generated from the light source 151 toward the target object. The window 155 may be made of a transparent silicon material such as quartz. Thus, the emitted light can be directly irradiated onto the object through the window 155.

Referring to FIGS. 1 and 3, a plasma etching apparatus 100 according to an embodiment of the present invention includes a linear ECR plasma source module 140 and a radiation source module 150. Therefore, there is an advantage in that the volatilization temperature of the etching by-products can be lowered at a lower process pressure (several mTorr or less) as compared with the IPC plasma source module.

Figure 112016052538677-pat00001

Here, T B is vaporized under a certain pressure point (K), R is the gas constant, P is the vapor pressure, Po is the pressure at a known temperature (To) according to a particular pressure, Hvap the heat of vaporization in the pressure (Po), To is Indicates the vaporization point.

Further, when the plasma etching process is performed at a lower pressure, the phenomenon that vaporized etching by-products are reattached to the inner wall of the process chamber 110 can be suppressed.

In addition, the ECR plasma generation method can generate a high-density plasma at a lower pressure than that of a generally used capacitively coupled plasma (CCP) etching apparatus or an ICP etching apparatus, thereby increasing the etching rate.

4 is a cross-sectional view illustrating a plasma etching apparatus for a metal thin film according to an embodiment of the present invention.

Referring to FIG. 4, a plasma etching apparatus 200 for a metal thin film according to an embodiment of the present invention includes a process chamber 210, a support 220, a gas supply unit 230, a linear ECR plasma source module 240, A light source module 250 and a pumping unit 260. The plasma etching apparatus 200 further includes a pumping unit 260 in the plasma etching apparatus 100 described with reference to FIG.

The pumping unit (260) is arranged to communicate with the processing space adjacent to the linear ECR plasma source module. The pumping unit 260 may evacuate the vaporized etch byproducts out of the process chamber when the etch by-products generated in the plasma etch process are vaporized. This prevents the vaporized etch byproduct from diffusing throughout the process chamber, thereby preventing secondary contamination in the process chamber.

Plasma etching of metal thin films

According to the plasma etching method for a metal thin film according to an embodiment of the present invention, an object is provided on a support provided in a process chamber that provides a processing space. The object includes a metal thin film formed on the upper surface of the substrate.

Thereafter, a process gas is supplied into the process space. The process gas may include chlorine gas when the metal thin film is made of copper.

Subsequently, the process gas supplied into the process chamber is exposed to the linear ECR plasma source module to generate a plasma. In this case, the size of the linear ECR plasma resonator module in the major axis direction can be adjusted according to the size of the substrate.

Thereafter, a plasma etching process is performed to etch the object using the plasmaized process gas. During the plasma etching process for etching the object, the object is exposed to radiation to vaporize etch byproducts generated during the plasma etching process.

Here, the support portion and the linear ECR plasma source module are relatively linearly moved, and a plasma etching process can be performed by a scanning method.

In an embodiment of the present invention, when the etch by-products generated in the plasma etching process are vaporized, the vaporized etch by-products may be exhausted to the outside of the process chamber. This prevents the vaporized etch byproduct from diffusing throughout the process chamber, thereby preventing secondary contamination in the process chamber.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It is to be understood that various modifications and changes may be made without departing from the scope of the appended claims.

100, 200 ... plasma etching apparatus 110, 210 ... process chamber
120, 220 ... support parts 130, 230 ... gas supply part
140, 240 ... Linear ECR plasma source module 150, 250 ... Source light source module
260 ... pumping unit

Claims (8)

A process chamber for providing a process space in which a plasma etching process is performed;
A support disposed in the processing space and supporting the object;
A gas supply unit connected to the process chamber and supplying the etching process gas into the process space; And
And a linear plasma source module disposed above the process chamber for plasmaizing the etching process gas supplied into the process space,
The supporting portion and the linear plasma source module are relatively linearly moved to perform a plasma etching process using a scanning method
And a source light source module disposed above the linear plasma source module and capable of vaporizing etch byproducts generated by the reaction of the etching process gas and the object during the plasma etching process by irradiating the object with the radiation light, Further comprising a plasma etching apparatus for plasma etching the metal thin film. delete The plasma etching apparatus of claim 1, wherein the linear plasma source module is extendable in the major axis direction and is linearly movable in the minor axis direction. The plasma display apparatus according to claim 1, wherein the light source module comprises a light source for generating a laser or an ultraviolet light, and a window for irradiating the light emitted from the light source toward the target object. Device. The plasma etching apparatus according to claim 1, further comprising a pumping unit arranged to communicate with the process space adjacent to the linear plasma source module and exhausting etching by-products generated in the plasma etching process. . Providing an object on a support provided in a process chamber providing a processing space;
Supplying an etch process gas into the process space;
Exposing the etch process gas supplied into the process chamber to a linear plasma source module to produce a plasma; And
And performing a plasma etching process for etching the object using the plasma-enhanced etching process gas,
The plasma etching process is performed by a scanning method in which the supporting part and the linear plasma source module are relatively linearly moved
And vaporizing the etching byproducts generated by the reaction between the etching process gas and the object during the plasma etching process by exposing the object to the radiation during the step of etching the object. Plasma etching method. delete 7. The method of claim 6, further comprising the step of evacuating the etch by-products generated in the plasma etching process to the outside of the process chamber.
KR1020160067528A 2016-05-31 2016-05-31 Apparatus for plasma etching a metal layer and method of plasma-etching a metal layer KR101938794B1 (en)

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KR1020160067528A KR101938794B1 (en) 2016-05-31 2016-05-31 Apparatus for plasma etching a metal layer and method of plasma-etching a metal layer
PCT/KR2017/005652 WO2017209496A1 (en) 2016-05-31 2017-05-30 Device for plasma-etching metal thin film and method for plasma-etching metal thin film

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