TW201542361A - 異向性導電膜及其製造方法 - Google Patents

異向性導電膜及其製造方法 Download PDF

Info

Publication number
TW201542361A
TW201542361A TW104103696A TW104103696A TW201542361A TW 201542361 A TW201542361 A TW 201542361A TW 104103696 A TW104103696 A TW 104103696A TW 104103696 A TW104103696 A TW 104103696A TW 201542361 A TW201542361 A TW 201542361A
Authority
TW
Taiwan
Prior art keywords
layer
conductive particles
anisotropic conductive
connecting layer
resin layer
Prior art date
Application number
TW104103696A
Other languages
English (en)
Other versions
TWI651195B (zh
Inventor
Reiji Tsukao
Yasushi Akutsu
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of TW201542361A publication Critical patent/TW201542361A/zh
Application granted granted Critical
Publication of TWI651195B publication Critical patent/TWI651195B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D171/00—Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C09D171/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C09D171/12—Polyphenylene oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H01L2224/2712—Applying permanent coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/275—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/27515—Curing and solidification, e.g. of a photosensitive layer material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29083—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/381—Pitch distance

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)

Abstract

具有以單層排列之導電粒子的多層構造之異向性導電膜，其具有第1連接層及形成於第1連接層單面之第2連接層。第1連接層為光聚合樹脂層，第2連接層為熱或光陽離子、陰離子或者自由基聚合性樹脂層。於第1連接層之第2連接層側表面以單層排列有異向性導電連接用之導電粒子，且第1連接層含有絕緣性填料。

Description

異向性導電膜及其製造方法
本發明係關於一種異向性導電膜及其製造方法。
異向性導電膜被廣泛用於IC(integrated circuit，積體電路)晶片等電子零件之構裝，近年來，就應用在高密度構裝之觀點而言，且為了導通可靠性或絕緣性之提高、構裝導電粒子捕捉率之提高、製造成本之降低等目的，提出有使異向性導電連接用之導電粒子以單層排列於絕緣性接著層而成的2層構造之異向性導電膜(專利文獻1)。
該2層構造之異向性導電膜係藉由如下方式製造：使導電粒子以單層且緊密填充之方式排列於轉印層後，對轉印層進行雙軸延伸處理，藉此形成導電粒子以特定間隔均等地排列之轉印層，此後，將該轉印層上之導電粒子轉印至含有熱硬化性樹脂及聚合起始劑之絕緣性樹脂層，進而於轉印後之導電粒子上層壓含有熱硬化性樹脂但不含聚合起始劑之另外絕緣性樹脂層(專利文獻1)。
專利文獻1：日本專利第4789738號說明書
然而，專利文獻1之2層構造之異向性導電膜由於使用不含聚合起始劑之絕緣性樹脂層，故而儘管使導電粒子以單層且以特定間隔均等地排列，亦因異向性導電連接時之加熱而於不含聚合起始劑之絕緣性樹 脂層易產生相對較大之樹脂流，導電粒子亦容易順著該樹脂流而流動，因此，產生構裝導電粒子捕捉率之降低、導通可靠性等問題。
本發明之目的在於解決以上習知之技術問題，於具有以單層排列之導電粒子的多層構造之異向性導電膜中，實現良好之導通可靠性及良好之構裝導電粒子捕捉率。
本發明人等發現，使光聚合性樹脂層含有絕緣填料，並使光導電粒子以單層排列於該光聚合性樹脂層後，藉由照射紫外線可使導電粒子固定化或者暫時固定化，進而於經固定化或者暫時固定化之導電粒子上積層熱或光陽離子、陰離子或者自由基聚合性樹脂層，藉此獲得異向性導電膜，該異向性導電膜為可達成上述本發明之目的之構成，以至完成本發明。
即，本發明提供一種異向性導電膜，其具有第1連接層及形成於第1連接層單面之第2連接層，其特徵在於：第1連接層為光聚合樹脂層，第2連接層為熱或光陽離子、陰離子或者自由基聚合性樹脂層，於第1連接層之第2連接層側表面以單層排列有異向性導電連接用之導電粒子，第1連接層含有絕緣填料。
再者，第2連接層較佳為使用有藉由加熱而使聚合反應開始之熱聚合起始劑的熱聚合性樹脂層，但亦可為使用有藉由光而使聚合反應開始之光聚合起始劑的光聚合性樹脂層。亦可為併用有熱聚合起始劑與光聚合起始劑之熱-光聚合性樹脂層。此處，第2連接層於製造上有時被限 定於使用熱聚合起始劑之熱聚合性樹脂層。
本發明之異向性導電膜亦可為了防止應力緩和等之接合體之翹曲，而於第1連接層之另一面具有與第2連接層大致相同構成之第3連接層。即，亦可於第1連接層之另一面具有由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層。
再者，第3連接層較佳為使用有藉由加熱而使聚合反應開始之熱聚合起始劑的熱聚合性樹脂層，但亦可為使用有藉由光而使聚合反應開始之光聚合起始劑的光聚合性樹脂層。亦可為併用有熱聚合起始劑及光聚合起始劑之熱-光聚合性樹脂層。此處，第3連接層於製造上有時被限定於使用熱聚合起始劑之熱聚合性樹脂層。
又，本發明提供一種製造方法，其係上述異向性導電膜之製造方法，具有以一階段之光聚合反應形成第1連接層之以下之步驟(A)~(C)，或具有以二階段之光聚合反應形成第1連接層之後述之步驟(AA)~(DD)。
(以一階段之光聚合反應形成第1連接層之情形)
步驟(A)使導電粒子以單層排列於含有絕緣填料之光聚合性樹脂層之步驟；步驟(B)對排列有導電粒子之光聚合性樹脂層照射紫外線，藉此使之進行光聚合反應，而形成表面固定有導電粒子之第1連接層之步驟；及步驟(C)於第1連接層之導電粒子側表面形成由熱或光陽離子、陰離子或者自 由基聚合性樹脂層所構成之第2連接層之步驟。
(以二階段之光聚合反應形成第1連接層之情形)
步驟(AA)使導電粒子以單層排列於含有絕緣填料之光聚合性樹脂層之步驟；步驟(BB)對排列有導電粒子之光聚合性樹脂層照射紫外線，藉此使之進行光聚合反應，而形成表面暫時固定有導電粒子之暫時第1連接層之步驟；步驟(CC)於暫時第1連接層之導電粒子側表面形成由熱陽離子、陰離子或者自由基聚合性樹脂層所構成之第2連接層之步驟；及步驟(DD)自與第2連接層相反之側對暫時第1連接層照射紫外線，藉此使之進行光聚合反應，而使暫時第1連接層正式硬化而形成第1連接層之步驟。
將步驟(CC)中第2連接層形成時所使用之起始劑限定於熱聚合起始劑之原因在於：為了不對作為異向性導電膜之產品壽命、連接及連接構造體之穩定性產生不良影響。即，於對第1連接層分二階段照射紫外線之情形時，有時由於其步驟上之制約而第2連接層不得不限定於熱聚合硬化性者。再者，於連續進行二階段照射之情形時，可以與一階段大致相同之步驟形成，因此，可期待同等之作用效果。
又，本發明提供一種製造方法，其係於第1連接層之另一面具有與第2連接層相同構成之第3連接層的異向性導電膜之製造方法，且除了以上之步驟(A)~(C)外於步驟(C)後亦具有以下之步驟(Z)， 或者，除了以上之步驟(AA)~(DD)外於步驟(DD)後具有以下之步驟(Z)。
步驟(Z)
於第1連接層之導電粒子側之相反面，形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層的步驟。
進而，本發明提供一種製造方法，其係於第1連接層之另一面具有與第2連接層大致相同構成之第3連接層的異向性導電膜之製造方法，且除了以上之步驟(A)~(C)外於步驟(A)之前亦具有以下之步驟(a)，或者除了以上之步驟(AA)~(DD)外於步驟(AA)之前具有以下之步驟(a)。
步驟(a)
於含有絕緣填料之光聚合性樹脂層之單面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層之步驟。
再者，於具有該步驟(a)之製造方法的步驟(A)或步驟(AA)中，使導電粒子以單層排列於光聚合性樹脂層之另一面即可。
於利用上述步驟設置第3連接層之情形時，出於上述之理由，故而聚合起始劑較佳為限定於利用熱反應者。然而，若藉由設置第1連接層後不對產品壽命或連接產生不良影響之方法，來設置含有光聚合起始劑之第2及第3連接層，則製造「含有光聚合起始劑之依據本發明之主旨」的異向性導電膜時並無特別限制。
再者，本發明之第2連接層或第3連接層之任一者作為黏著層而發揮功能的態樣亦包含於本發明。
另外，本發明提供一種利用上述異向性導電膜將第1電子零件異向性導電連接於第2電子零件而成之連接構造體。
本發明之異向性導電膜具有第1連接層，其由使含有絕緣填料之光聚合性樹脂層進行光聚合而獲得之光聚合樹脂層所構成；及第2連接層，其形成於第1連接層單面且由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成，進而，於第1連接層之第2連接層側表面以單層排列有異向性導電連接用之導電粒子。而且，第1連接層中摻合有絕緣填料。因此，可將導電粒子牢牢地固定於第1連接層。想當然，可實現良好之導通可靠性及良好之構裝導電粒子捕捉率。再者，關於第1連接層中存在於導電粒子之下方(背側)之光聚合性樹脂層，由於導電粒子之存在，可使紫外線之照射量相對較低，而使硬化率降低。因此，可實現良好之壓入性。
於該接合為利用熱者之情形時，為與通常之異向性導電膜之連接方法相同之方法。於為利用光者之情形時，使利用連接工具之壓入進行直至反應結束即可。即便於該情形時，連接工具等為了促進樹脂流動或粒子之壓入而受到加熱之情形亦較多。又，於併用熱與光之情形時，亦與上述同樣地進行即可。
於利用光反應之異向性導電連接之情形時，自透光部側照射光。此雖有受配線阻礙之虞，但本發明於配線經狹小化(即，窄間距化)者之異向性導電連接中亦表現出效果，因此，即便設為包括含有可耐連接之光反應化合物之態樣，亦並無特別矛盾。
1、100‧‧‧異向性導電膜
2‧‧‧第1連接層
2X、2Y‧‧‧第1連接層部分
3‧‧‧第2連接層
4‧‧‧導電粒子
5‧‧‧第3連接層
30、40‧‧‧剝離膜
20‧‧‧暫時第1連接層
31‧‧‧光聚合性樹脂層
50‧‧‧暫時異向性導電膜
圖1係本發明之異向性導電膜之剖面圖。
圖2係本發明之異向性導電膜之製造步驟(A)之說明圖。
圖3A係本發明之異向性導電膜之製造步驟(B)之說明圖。
圖3B係本發明之異向性導電膜之製造步驟(B)之說明圖。
圖4A係本發明之異向性導電膜之製造步驟(C)之說明圖。
圖4B係本發明之異向性導電膜之製造步驟(C)之說明圖。
圖5係本發明之異向性導電膜之剖面圖。
圖6係本發明之異向性導電膜之製造步驟(AA)之說明圖。
圖7A係本發明之異向性導電膜之製造步驟(BB)之說明圖。
圖7B係本發明之異向性導電膜之製造步驟(BB)之說明圖。
圖8A係本發明之異向性導電膜之製造步驟(CC)之說明圖。
圖8B係本發明之異向性導電膜之製造步驟(CC)之說明圖。
圖9A係本發明之異向性導電膜之製造步驟(DD)之說明圖。
圖9B係本發明之異向性導電膜之製造步驟(DD)之說明圖。
《異向性導電膜》
以下，對本發明之異向性導電膜之較佳一例進行詳細說明。
如圖1所示般，本發明之異向性導電膜1具有如下構造：於由使含有絕緣填料之光聚合性樹脂層進行光聚合而獲得之光聚合樹脂層所構成之第1連接層2之單面，形成有由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第2連接層3。而且，於第1連接層2之第2連接層3側之表面2a，為了異向性導電連接而以單層排列有、較佳為均等地排列有 導電粒子4。此處，所謂均等，意指導電粒子沿平面方向排列之狀態。其規則性可按一定間隔設置。又，第1連接層2中摻合有絕緣填料。
<第1連接層2>
構成本發明之異向性導電膜1之第1連接層2係使含有絕緣填料之光聚合性樹脂層進行光聚合而獲得之光聚合樹脂層，因此可將導電粒子固定。又，由於進行聚合，故而即便於異向性導電連接時被加熱，樹脂亦難以流動，因此可大為抑制短路之發生，因此，可提高導通可靠性，且亦可提高構裝導電粒子捕捉率。尤佳之第1連接層2係使含有丙烯酸酯化合物、光自由基聚合起始劑及絕緣填料之光自由基聚合性樹脂層進行光自由基聚合而成之光自由基聚合樹脂層。以下，對第1連接層2為光自由基聚合樹脂層之情形進行說明。
(絕緣填料)
絕緣填料，係特別為了提高第1連接層2之導通可靠性而使用。上述絕緣填料之平均粒徑較佳為5nm以上且500nm以下，更佳為7nm以上且300nm以下。若為該範圍，則可提高導通可靠性，且亦可提高構裝導電粒子捕捉率。又，關於絕緣填料，為了促進第1連接層2整體之充分光硬化，較佳為具有光散射性。此處，所謂光散射性，係指使外光擴散至層內之特性。作為上述絕緣填料之具體例，可列舉：二氧化矽微粒子、金紅石型二氧化鈦等。
絕緣填料於第1連接層2中之含量較佳為0.5~20質量%、更佳為2~7質量%。若為該範圍，則可不妨礙導電粒子之壓入而提高導通可靠性且亦提高構裝導電粒子捕捉率。
(丙烯酸酯化合物)
作為形成丙烯酸酯單位之丙烯酸酯化合物，可使用以往公知之光自由基聚合性丙烯酸酯。例如，可使用：單官能(甲基)丙烯酸酯(此處，(甲基)丙烯酸酯包括丙烯酸酯與甲基丙烯酸酯)、二官能以上之多官能(甲基)丙烯酸酯。於本發明中，為了使接著劑成為熱硬化性，較佳為丙烯酸系單體之至少一部分使用多官能(甲基)丙烯酸酯。。
關於第1連接層2中丙烯酸酯化合物之含量，若過少，則有難以賦予與第2連接層3之黏度差之傾向，若過多，則有硬化收縮較大而作業性降低之傾向，因此，較佳為2~70質量%，更佳為10~50質量%。
(光自由基聚合起始劑)
作為光自由基聚合起始劑，可自公知之光自由基聚合起始劑中適當選擇而使用。例如，可列舉苯乙酮系光聚合起始劑、苯偶醯縮酮系光聚合起始劑、磷系光聚合起始劑等。
關於光自由基聚合起始劑之使用量，相對於丙烯酸酯化合物100質量份，若過少則光自由基聚合不充分進行，若過多則成為剛性降低之原因，因此較佳為0.1~25質量份，更佳為0.5~15質量份。
(導電粒子)
作為導電粒子，可自以往公知之異向性導電膜所使用者中適當選擇而使用。例如，可列舉：鎳、鈷、銀、銅、金、鈀等金屬粒子、金屬被覆樹脂粒子等。亦可併用2種以上。
作為導電粒子之平均粒徑，若過小則無法吸收配線之高度不均而有電阻變高之傾向，若過大亦有成為短路之原因之傾向，因此，較佳 為1~10μm，更佳為2~6μm。
關於上述導電粒子於第1連接層2中之粒子量，若過少，則構裝導電粒子捕捉數降低而異向性導電連接變難，若過多，則有短路之虞，因此，較佳為每1平方毫米為50~50000個，更佳為200~30000個。
第1連接層2中，視需要可併用苯氧基樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺酯樹脂(urethane resin)、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等膜形成樹脂。第2連接層3及第3連接層5中可同樣地併用。
關於第1連接層2之層厚，若過薄，則有構裝導電粒子捕捉率降低之傾向，若過厚，則有導通電阻變高之傾向，因此，較佳為1.0~6.0μm，更佳為2.0~5.0μm。
亦可使第1連接層2中進而含有環氧化合物及熱或光陽離子或者陰離子聚合起始劑。於該情形時，如後述般，較佳為第2連接層3亦設為含有環氧化合物與熱或光陽離子或者陰離子聚合起始劑之熱或光陽離子或者陰離子聚合性樹脂層。藉此，可提高層間剝離強度。關於環氧化合物及熱或光陽離子或者陰離子聚合起始劑，於第2連接層3處進行說明。
於第1連接層2中，如圖1所示般，較佳為導電粒子4沒入第2連接層3(換言之，導電粒子4露出於第1連接層2之表面)。其原因在於：若導電粒子4完全埋沒於第1連接層2中，則有電阻導通變高之虞。關於沒入之程度，若過小則有構裝導電粒子捕捉率降低之傾向，若過大則有導通電阻變高之傾向，因此，較佳為導電粒子之平均粒徑之10~90%、更佳為20~80%。
又，於對光自由基聚合性樹脂層照射紫外線而形成第1連接層2之情形時，可自未配置導電粒子一側之面與配置有導電粒子一側之面中任一面進行照射。於自配置有導電粒子一側進行照射之情形時，於第1連接層2中，可使位於導電粒子4與第1連接層2之最外表面2b之間的區域之第1連接層部分2X之硬化率，較位於相互鄰接之導電粒子4間的區域之第1連接層部分2Y之硬化率低。於該情形時，於異向性導電連接之熱壓接時，第1連接層部分2X易被排除，而可期待導通可靠性提高之效果。此處，硬化率為被定義為乙烯基之減少比率的數值，第1連接層部分2X之硬化率較佳為40~80%，第1連接層部分2Y之硬化率較佳為70~100%。
又，當絕緣填料為具有良好之光散射性或者光擴散性者時，有第1連接層部分2X之硬化率較不含上述絕緣填料之情形提高之傾向，但第1連接層部分2X與第1連接層部分2Y之間之硬化率差較佳為未達10%。
再者，第1連接層部分2X與2Y之間之硬化率差可實質上消失。其原因在於：於製造中，促進導電粒子之固定化，可確保穩定之品質。且其原因在於：於製作產品而進行通常之長條化時，於捲繞開始及捲繞結束時，使施加於排列之導電粒子之壓力均勻化，防止排列散亂。
再者，第1連接層2形成時之光自由基聚合可以一階段(即，一次光照射)進行，亦可以二階段(即，二次光照射)進行。於該情形時，第二階段之光照射較佳為於在第1連接層2之單面形成有第2連接層3後於含氧環境(大氣中)下自第1連接層2之另一面側進行。藉此，可期待自由基聚合反應受氧阻礙而未硬化成分之表面濃度提高而可提高黏著性之效果。又，因以二階段進行硬化，故而聚合反應亦複雜化，因此，亦可期待 可精確控制樹脂或粒子之流動性。
上述二階段之光自由基聚合中，第1連接層之區域2X於第一階段中之硬化率較佳為10~50%，於第二階段中之硬化率較佳為40~80%，第1連接層之區域2Y於第一階段中之硬化率較佳為30~90%，於第二階段中之硬化率較佳為70~100%。
於上述二階段光自由基聚合中，於絕緣填料為具有良好之光擴散性者之情形時，有第1連接層部分2X之硬化率較不含上述絕緣填料之情形提高之傾向，但第1連接層部分2X與第1連接層部分2Y之間之硬化率差較佳為未達10%。
又，當第1連接層2形成時之光自由基聚合反應以二階段進行時，作為自由基聚合起始劑，亦可僅使用1種，但使用使自由基反應開始之波長頻帶不同之2種光自由基聚合起始劑時，黏著性提高，因此較佳。例如，較佳為將利用源自LED光源之波長365nm之光使自由基反應開始之IRGACURE 369(BASF JAPAN(股))、與利用源自高壓水銀燈光源之光使自由基反應開始之IRGACURE 2959(BASF JAPAN(股))併用。藉由如上述般使用2種不同之硬化劑，而樹脂之結合複雜化，因此，可更精密地控制連接時樹脂之熱流動之舉動。其原因在於：於異向性導電連接之壓入時，粒子易受在厚度方向施加之力，但在面方向之流動受到抑制，因此更容易表現本發明之效果。
又，第1連接層2利用流變計測定時之最低熔融黏度高於第2連接層3之最低熔融黏度，具體而言，[第1連接層2之最低熔融黏度(mPa‧s)]/[第2連接層3之最低熔融黏度(mPa‧s)]之數值較佳為1~1000，更 佳為4~400。再者，關於各者之較佳最低熔融黏度，前者為100~100000mPa‧S，更佳為500~50000mPa‧s。後者較佳為0.1~10000mPa‧s，更佳為0.5~1000mPa‧s。
第1連接層2之形成可藉由如下方式形成：藉由膜轉印法、模具轉印法、噴墨法、靜電附著法等方法使導電粒子附著於含有光自由基聚合性丙烯酸酯及光自由基聚合起始劑之光自由基聚合性樹脂層，並自導電粒子側、其相反側、或者兩側照射紫外線。尤其是，僅自導電粒子側照射紫外線時，就可將第1連接層之區域2X之硬化率抑制得相對較低方面而言，較佳。
<第2連接層3>
第2連接層3係由熱或光陽離子、陰離子或者自由基聚合性樹脂層構成，較佳為由含有環氧化合物及熱或光陽離子或者陰離子聚合起始劑之熱或光陽離子或者陰離子聚合性樹脂層、或含有丙烯酸酯化合物及熱或光自由基聚合起始劑之熱或光自由基聚合性樹脂層構成。此處，由熱聚合性樹脂層形成第2連接層3時，並不因形成第1連接層2時之紫外線照射而發生第2連接層3之聚合反應，因此，就生產之簡便性及品質穩定性方面而言，較理想。
於第2連接層3為熱或光陽離子或者陰離子聚合性樹脂層之情形時，進而可含有丙烯酸酯化合物及熱或光自由基聚合起始劑。藉此，可提高與第1連接層2之層間剝離強度。
(環氧化合物)
於第2連接層3為含有環氧化合物及熱或光陽離子或者陰離子聚合起 始劑之熱或光陽離子或者陰離子聚合性樹脂層時，作為環氧化合物，較佳可列舉分子內具有2個以上環氧基之化合物或者樹脂。該等可為液狀，亦可為固體狀。
(熱陽離子聚合起始劑)
作為熱陽離子聚合起始劑，可採用公知者作為環氧化合物之熱陽離子聚合起始劑，例如，藉由熱而產生可使陽離子聚合性化合物發生陽離子聚合之酸者，可使用公知之錪鹽、鋶鹽、鏻鹽、二茂鐵類等，可較佳地使用對溫度顯示良好潛伏性之芳香族鋶鹽。
關於熱陽離子聚合起始劑之摻合量，過少則有硬化不良之傾向，過多則有產品壽命降低之傾向，因此，相對於環氧化合物100質量份較佳為2~60質量份、更佳為5~40質量份。
(熱陰離子聚合起始劑)
作為熱陰離子聚合起始劑，可採用公知者作為環氧化合物之熱陰離子聚合起始劑，例如，藉由熱而產生可使陰離子聚合性化合物發生陰離子聚合之鹼者，可使用公知之脂肪族胺系化合物、芳香族胺系化合物、二級或三級胺系化含物、咪唑系化合物、聚硫醇系化合物、三氟化硼-胺錯合物、雙氰胺、有機醯肼等，可較佳地使用對溫度顯示良好潛伏性之膠囊化咪唑系化合物。
關於熱陰離子聚合起始劑之摻合量，過少則有硬化不良之傾向，過多則有產品壽命降低之傾向，因此，相對於環氧化合物100質量份較佳為2~60質量份、更佳為5~40質量份。
(光陽離子聚合起始劑及光陰離子聚合起始劑)
作為環氧化合物用之光陽離子聚合起始劑或光陰離子聚合起始劑，可適當使用公知者。
(丙烯酸酯化合物)
當第2連接層3為含有丙烯酸酯化合物及熱或光自由基聚合起始劑之熱或光自由基聚合性樹脂層時，作為丙烯酸酯化合物，可自關於第1連接層2所說明者中適當選擇而使用。
(熱自由基聚合起始劑)
又，作為熱自由基聚合起始劑，例如，可列舉有機過氧化物或偶氮系化合物等，但可較佳地使用不產生成為氣泡之原因之氮的有機過氧化物。
關於熱自由基聚合起始劑之使用量，若過少則硬化不良，若過多則產品壽命降低，因此，相對於丙烯酸酯化合物100質量份較佳為2~60質量份、更佳為5~40質量份。
(光自由基聚合起始劑)
作為丙烯酸酯化合物用之光自由基聚合起始劑，可使用公知之光自由基聚合起始劑。
關於光自由基聚合起始劑之使用量，若過少則硬化不良，若過多則產品壽命降低，因此，相對於丙烯酸酯化合物100質量份較佳為2~60質量份、更佳為5~40質量份。
(第3連接層5)
以上，已對圖1之2層構造之異向性導電膜進行說明，但亦可如圖5所示般於第1連接層2之另一面形成有第3連接層5。藉此，獲得可更精確地控制層整體之流動性之效果。此處，作為第3連接層5，可設為與前述之 第2連接層3相同之構成。即，第3連接層5與第2連接層3同樣地為由熱或光陽離子、陰離子或者自由基聚合性樹脂層構成。關於上述第3連接層5，可於在第1連接層之單面形成第2連接層後形成於第1連接層之另一面，亦可於第2連接層形成前，於第1連接層或者其前驅物即光聚合性樹脂層之另一面(不形成第2連接層之面)預先形成第3連接層。
《異向性導電膜之製造方法》
本發明之異向性導電膜之製造方法中，可列舉進行一階段光聚合反應之製造方法、及進行二階段光聚合反應之製造方法。
<進行一階段光聚合反應之製造方法>
對以一階段進行光聚合而製造圖1(圖4B)之異向性導電膜之一例進行說明。該製造例具有以下之步驟(A)~(C)。
(步驟(A))
如圖2所示般，使導電粒子4以單層排列於視需要形成於剝離膜30上之含有絕緣填料之光聚合性樹脂層31。作為導電粒子4之排列方法，並無特別限制，可採用日本專利第4789738號之實施例1之對未延伸聚丙烯膜利用雙軸延伸操作之方法，或日本特開2010-33793號公報之使用模具之方法等。再者，作為排列之程度，考慮到連接對象之尺寸、導通可靠性、絕緣性、構裝導電粒子捕捉率等，較佳為二維地相互隔開1~100μm左右地排列。
(步驟(B))
繼而，如圖3A所示般，對排列有導電粒子4之光聚合性樹脂層31照射紫外線(UV)，藉此使之進行光聚合反應，而形成表面固定有導電粒子4 之第1連接層2。於該情形時，可自導電粒子側照射紫外線(UV)，亦可自相反側照射紫外線，但於自導電粒子側照射紫外線(UV)之情形時，如圖3B所示般，可使位於導電粒子4與第1連接層2之最外表面之間的區域之第1連接層之部分2X之硬化率，較位於相互鄰接之導電粒子4間的區域之第1連接層部分2Y之硬化率低。藉由如此，粒子背側之硬化性確實變低而使接合時之壓入變得容易，且亦可同時具備防止粒子流動之效果。
(步驟(C))
繼而，如圖4A所示般，於第1連接層2之導電粒子4側表面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第2連接層3。作為具體之一例，將藉由常用方法而形成於剝離膜40之第2連接層3載置於第1連接層2之導電粒子4側表面，以不發生過大之熱聚合之程度進行熱壓接。然後，可藉由去除剝離膜30及40而獲得圖4B之異向性導電膜。
再者，圖5之異向性導電膜100可藉由在步驟(C)之後實施以下之步驟(Z)而獲得。
(步驟(Z))
於第1連接層之導電粒子側之相反面，較佳為與第2連接層同樣地形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層。藉此，可獲得圖5之異向性導電膜。
又，圖5之異向性導電膜100亦可不進行步驟(Z)而藉由在步驟(A)之前實施以下之步驟(a)而獲得。
(步驟(a))
該步驟係於含有絕緣填料之光聚合性樹脂層之單面形成由熱或光陽離 子、陰離子或者自由基聚合性樹脂層所構成之第3連接層的步驟。藉由繼該步驟(a)後實施步驟(A)、(B)及(C)，可獲得圖5之異向性導電膜100。其中，於步驟(A)中，使導電粒子以單層排列於光聚合性樹脂層之另一面。
<進行二階段光聚合反應之製造方法>
繼而，對以二階段進行光聚合而製造圖1(圖4B)之異向性導電膜之一例進行說明。該製造例具有以下之步驟(AA)~(DD)。
(步驟(AA))
如圖6所示般，使導電粒子4以單層排列於視需要形成於剝離膜30上之含有絕緣填料之光聚合性樹脂層31。作為導電粒子4之排列方法，並無特別限制，可採用日本專利第4789738號之實施例1之對未延伸聚丙烯膜利用雙軸延伸操作之方法，或日本特開2010-33793號公報之使用模具之方法等。再者，作為排列之程度，考慮到連接對象之尺寸、導通可靠性、絕緣性、構裝導電粒子捕捉率等，較佳為二維地相互隔開1~100μm左右地排列。
(步驟(BB))
繼而，如圖7A所示般，對排列有導電粒子4之光聚合性樹脂層31照射紫外線(UV)，藉此使之進行光聚合反應，而形成表面暫時固定有導電粒子4之暫時第1連接層20。於該情形時，可自導電粒子側照射紫外線(UV)，亦可自相反側照射紫外線，但於自導電粒子側照射紫外線(UV)之情形時，如圖7B所示般，可使位於導電粒子4與暫時第1連接層20之最外表面之間的區域之暫時第1連接層部分2X之硬化率，較位於相互鄰接之導電粒子 4間的區域之暫時第1連接層部分2Y之硬化率低。
(步驟(CC))
繼而，如圖8A所示般，於暫時第1連接層20之導電粒子4側表面形成由熱陽離子、陰離子或者自由基聚合性樹脂層所構成之第2連接層3。作為具體之一例，將藉由常用方法而形成於剝離膜40之第2連接層3載置於第1連接層2之導電粒子4側表面，以不發生過大之熱聚合之程度進行熱壓接。然後，可藉由去除剝離膜30及40而獲得圖8B之暫時異向性導電膜50。
(步驟(DD))
繼而，如圖9A所示般，自與第2連接層3相反側對暫時第1連接層20照射紫外線，藉此使之進行光自由基聚合反應，使暫時第1連接層20正式硬化而形成第1連接層2。藉此，可獲得圖9B之異向性導電膜1。該步驟中之紫外線照射較佳為自垂直於暫時第1連接層20之方向進行。又，於為了使第1連接層部分2X與2Y間之硬化率差不消失之情形時，較佳為介隔遮罩(mask)進行照射，或根據照射部位而於照射光量設置差異。
再者，於以2階段進行光自由基聚合之情形時，圖5之異向性導電膜100可藉由在步驟(DD)之後實施以下之步驟(Z)而獲得。
(步驟(Z))
於第1連接層之導電粒子側之相反面，較佳為與第2連接層同樣地形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層。藉此，可獲得圖5之異向性導電膜。
又，圖5之異向性導電膜100亦可不進行步驟(Z)而藉由 在步驟(AA)之前實施以下之步驟(a)而獲得。
(步驟(a))
該步驟係於含有絕緣填料之光聚合性樹脂層之單面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層之步驟。藉由繼該步驟(a)之後實施步驟(AA)~(DD)，可獲得圖5之異向性導電膜100。其中，於步驟(AA)中，於光聚合性樹脂層之另一面使導電粒子以單層排列。於該情形時，作為用於第2連接層形成時之聚合起始劑，較佳為應用熱聚合起始劑。為光聚合起始劑之情形時，有步驟上會對作為異向性導電膜之產品壽命、連接及連接構造體之穩定性造成不良影響之虞。
《連接構造體》
以上述方式所獲得之異向性導電膜可較佳地應用於將IC晶片、IC模組等第1電子零件與撓性基板、玻璃基板等第2電子零件進行異向性導電連接之時。以上述方式獲得之連接構造體亦為本發明之一部分。再者，將異向性導電膜之第1連接層側配置於撓性基板等第2電子零件側，並將第2連接層側配置於IC晶片等第1電子零件側時，於提高導通可靠性方面較佳。
實施例
以下，利用實施例具體地說明本發明。
實施例1~10、比較例1
依據日本專利第4789738號之實施例1之操作進行導電粒子之排列，並且依照表1所示之組成(質量份)製成使第1連接層與第2連接層積層而成之2層構造之異向性導電膜。
(第1連接層)
具體而言，首先，利用乙酸乙酯或甲苯將丙烯酸酯化合物、光自由基聚合起始劑及絕緣填料等以固形物成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為5μm之方式塗佈於厚度50μm之聚對苯二甲酸乙二酯膜，並於80℃之烘箱中乾燥5分鐘，藉此形成第1連接層之前驅層即光自由基聚合性樹脂層。
繼而，對所獲得之光自由基聚合性樹脂層，使平均粒徑4μm之導電粒子(鍍Ni/Au樹脂粒子、AUL704、積水化學工業(股))相互分隔4μm並以單層排列。進而，自該導電粒子側對光自由基聚合性樹脂層以累計光量4000mJ/cm2照射波長365nm之紫外線，藉此形成表面固定有導電粒子之第1連接層。再者，於實施例6~10之情形時，以累計光量200mJ/cm2照射紫外線。
(第2連接層)
利用乙酸乙酯或甲苯將熱硬化性樹脂及潛伏性硬化劑等以固形物成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為12μm之方式塗佈於厚度50μm之聚對苯二甲酸乙二酯膜，並於80℃之烘箱中乾燥5分鐘，藉此形成第2連接層。
(異向性導電膜)
將以上述方式所獲得之第1連接層與第2連接層以導電粒子處於內側之方式進行層壓，藉此獲得異向性導電膜。
再者，對於實施例6~10之異向性導電膜，自其等之第1連接層側進而以累計光量2000mJ/cm2照射波長365nm之紫外線。
(連接構造樣本體)
使用所獲得之異向性導電膜，以180℃、80MPa、5秒之條件將0.5×1.8×20.0mm大小之IC晶片(凸塊尺寸30×85μm、凸塊高度15μm、凸塊間距50μm)構裝於0.5×50×30mm大小之康寧公司製造之玻璃配線基板(1737F)，而獲得連接構造樣本體。
(試驗評價)
關於所獲得之連接構造樣本體，如以下說明般，對異向性導電膜之「構裝導電粒子捕捉率」、「初期導通電阻」、及「導通可靠性」進行試驗評價。將所獲得之結果示於表1。
「構裝導電粒子捕捉率」
依據以下之算式求出“加熱、加壓後(實際構裝後)之連接構造樣本體之凸塊上實際捕捉到之粒子量”相對於“加熱、加壓前存在於連接構造樣本體之凸塊上之理論粒子量”的比率。
構裝導電粒子捕捉率(%)={[加熱加壓後之凸塊上之導電粒子數]/[加熱加壓前之凸塊上之導電粒子數]}×100
「初期導通電阻」
使用數位萬用錶(Agilent Technologies(股))測定連接構造樣本體之導通電阻值。實際使用上較理想為2Ω以下。
「導通可靠性」
將連接構造樣本體於85℃、85%RH之高溫高濕環境下放置500小時後，使用數位萬用錶(Agilent Technologies(股))測定其導通電阻。實際使用上若為4Ω以下，則判斷為導通可靠性良好。
如根據表1可知般，關於實施例1~10之異向性導電膜，構裝導電粒子捕捉率、初期導通電阻、導通可靠性之各評價項目均顯示實際使用上較佳之結果，與第1連接層中未摻合絕緣填料之比較例1之異向性導電膜相比，構裝導電粒子捕捉率及導通可靠性受到了改善。
[產業上之可利用性]
本發明之異向性導電膜具有由光聚合樹脂層所構成之第1連接層、與熱或光陽離子、陰離子或者自由基聚合性樹脂層積層而成之2層構造，進而於第1連接層之第2連接層側表面以單層排列有異向性導電連接用之導電粒子。而且，於第1連接層中摻合有絕緣填料。因此，顯示良好之導通可靠性、構裝導電粒子捕捉率。因此，可用於IC晶片等電子零件對配線基板之異向性導電連接。上述電子零件之配線正朝狹小化發展，本發明於對上述技術進步做貢獻之情形時，尤其表現該效果。
1‧‧‧異向性導電膜
2‧‧‧第1連接層
2a‧‧‧第1連接層之第2連接層側之表面
2b‧‧‧第1連接層之最外表面
2X、2Y‧‧‧第1連接層部分
3‧‧‧第2連接層
4‧‧‧導電粒子

Claims (19)

  1. 一種異向性導電膜，其具有第1連接層及形成於第1連接層單面之第2連接層，其特徵在於：第1連接層為光聚合樹脂層，第2連接層為熱或光陽離子、陰離子或者自由基聚合性樹脂層，於第1連接層之第2連接層側表面以單層排列有異向性導電連接用之導電粒子，第1連接層含有絕緣性填料。
  2. 如申請專利範圍第1項之異向性導電膜，其中，絕緣性填料之平均粒徑為5nm以上且500nm以下。
  3. 如申請專利範圍第1或2項之異向性導電膜，其中，絕緣性填料具有光散射性。
  4. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，第1連接層係使含有丙烯酸酯化合物及光自由基聚合起始劑之光自由基聚合性樹脂層進行光自由基聚合而成之光自由基聚合樹脂層。
  5. 如申請專利範圍第1至4項中任一項之異向性導電膜，其中，第1連接層進而含有環氧化合物，及熱或光陽離子或者陰離子聚合起始劑。
  6. 如申請專利範圍第1至5項中任一項之異向性導電膜，其中，第2連接層係熱或光陽離子或者陰離子聚合性樹脂層，或熱或光自由基聚合性樹脂層，又，上述熱或光陽離子或者陰離子聚合性樹脂層含有環氧化合物及熱或光陽離子或者陰離子聚合起始劑，上述熱或光自由基聚合性樹脂層含有丙烯酸酯化合物及熱或光自由基聚合起始劑。
  7. 如申請專利範圍第6項之異向性導電膜，其中，第2連接層係含有環氧化合物及熱或光陽離子或者陰離子聚合起始劑之熱或光陽離子或者陰離子聚合性樹脂層，進而含有丙烯酸酯化合物及熱或光自由基聚合起始劑。
  8. 如申請專利範圍第1至7項中任一項之異向性導電膜，其中，導電粒子沒入第2連接層中。
  9. 如申請專利範圍第1至8項中任一項之異向性導電膜，其中，於第1連接層中，位於導電粒子與第1連接層之最外表面之間的區域之第1連接層部分之硬化率，較位於相互鄰接之導電粒子間的區域之第1連接層部分之硬化率低。
  10. 如申請專利範圍第1至9項中任一項之異向性導電膜，其中，第1連接層之最低熔融黏度高於第2連接層之最低熔融黏度。
  11. 一種申請專利範圍第1項之異向性導電膜之製造方法，其具有以下之步驟(A)~(C)：步驟(A)使導電粒子以單層排列於含有絕緣填料之光聚合性樹脂層之步驟；步驟(B)對排列有導電粒子之光聚合性樹脂層照射紫外線，藉此使之進行光聚合反應，而形成表面固定有導電粒子之第1連接層之步驟；及步驟(C)於第1連接層之導電粒子側表面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第2連接層之步驟。
  12. 如申請專利範圍第11項之製造方法，其中，自光聚合性樹脂層之排列有導電粒子之側進行步驟(B)之紫外線照射。
  13. 一種申請專利範圍第1項之異向性導電膜之製造方法，其具有以下之步驟(AA)~(DD)：步驟(AA)使導電粒子以單層排列於含有絕緣填料之光聚合性樹脂層之步驟；步驟(BB)對排列有導電粒子之光聚合性樹脂層照射紫外線，藉此使之進行光聚合反應，而形成表面暫時固定有導電粒子之暫時第1連接層之步驟；步驟(CC)於暫時第1連接層之導電粒子側表面形成由熱陽離子、陰離子或者自由基聚合性樹脂層所構成之第2連接層之步驟；及步驟(DD)自與第2連接層相反之側對暫時第1連接層照射紫外線，藉此使之進行光聚合反應，使暫時第1連接層正式硬化而形成第1連接層之步驟。
  14. 如申請專利範圍第13項之製造方法，其中，自光聚合性樹脂層之排列有導電粒子之側進行步驟(BB)之紫外線照射。
  15. 如申請專利範圍第11項之製造方法，其中，於步驟(C)之後具有以下之步驟(Z)：步驟(Z)於第1連接層之導電粒子側之相反面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層之步驟。
  16. 如申請專利範圍第11項之製造方法，其中，於步驟(A)之前具有以下之步驟(a)：步驟(a)於含有絕緣填料之光聚合性樹脂層之單面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層之步驟，於步驟(A)中，使導電粒子以單層排列於光聚合性樹脂層之另一面。
  17. 如申請專利範圍第13項之製造方法，其中，於步驟(DD)之後具有以下之步驟(Z)：步驟(Z)於第1連接層之導電粒子側之相反面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層之步驟。
  18. 如申請專利範圍第13項之製造方法，其中，於步驟(AA)之前具有以下之步驟(a)：步驟(a)於含有絕緣填料之光聚合性樹脂層之單面形成由熱或光陽離子、陰離子或者自由基聚合性樹脂層所構成之第3連接層之步驟，於步驟(AA)中，使導電粒子以單層排列於光聚合性樹脂層之另一面。
  19. 一種連接構造體，其係利用申請專利範圍第1至10項中任一項之異向性導電膜將第1電子零件異向性導電連接於第2電子零件而成。
TW104103696A 2014-02-04 2015-02-04 異向性導電膜及其製造方法 TWI651195B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014019867A JP6260313B2 (ja) 2014-02-04 2014-02-04 異方性導電フィルム及びその製造方法
JPJP2014-019867 2014-02-04

Publications (2)

Publication Number Publication Date
TW201542361A true TW201542361A (zh) 2015-11-16
TWI651195B TWI651195B (zh) 2019-02-21

Family

ID=53777900

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104103696A TWI651195B (zh) 2014-02-04 2015-02-04 異向性導電膜及其製造方法

Country Status (6)

Country Link
US (1) US10849236B2 (zh)
JP (1) JP6260313B2 (zh)
KR (1) KR102450709B1 (zh)
CN (1) CN105940559B (zh)
TW (1) TWI651195B (zh)
WO (1) WO2015119095A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017141863A1 (ja) * 2016-02-15 2017-08-24 デクセリアルズ株式会社 異方性導電フィルム、その製造方法及び接続構造体
JP7210846B2 (ja) * 2017-09-11 2023-01-24 株式会社レゾナック 回路接続用接着剤フィルム及びその製造方法、回路接続構造体の製造方法、並びに、接着剤フィルム収容セット

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001052778A (ja) * 1999-08-06 2001-02-23 Hitachi Chem Co Ltd 異方導電性接着フィルムおよびその製造方法
JP4838828B2 (ja) * 2001-04-27 2011-12-14 旭化成株式会社 異方性を有する導電性接着シートおよびその製造方法
GB0225913D0 (en) * 2002-11-06 2002-12-11 3M Innovative Properties Co Abrasive articles
TWI388876B (zh) * 2003-12-26 2013-03-11 Fujifilm Corp 抗反射膜、偏光板，其製造方法，液晶顯示元件，液晶顯示裝置，及影像顯示裝置
KR100722493B1 (ko) * 2005-09-02 2007-05-28 제일모직주식회사 절연 전도성 미립자 및 이를 이용한 이방 전도성 접착필름
JP4789738B2 (ja) 2006-07-28 2011-10-12 旭化成イーマテリアルズ株式会社 異方導電性フィルム
JP4962706B2 (ja) * 2006-09-29 2012-06-27 日本化学工業株式会社 導電性粒子およびその製造方法
JP5093482B2 (ja) * 2007-06-26 2012-12-12 ソニーケミカル＆インフォメーションデバイス株式会社 異方性導電材料、接続構造体及びその製造方法
JP4880533B2 (ja) * 2007-07-03 2012-02-22 ソニーケミカル＆インフォメーションデバイス株式会社 異方性導電膜及びその製造方法、並びに接合体
JP2010033793A (ja) * 2008-07-28 2010-02-12 Tokai Rubber Ind Ltd 粒子転写膜の製造方法
JP4897778B2 (ja) * 2008-11-20 2012-03-14 ソニーケミカル＆インフォメーションデバイス株式会社 接続フィルム、並びに、接合体及びその製造方法
JP2010199087A (ja) * 2010-05-11 2010-09-09 Sony Chemical & Information Device Corp 異方性導電膜及びその製造方法、並びに、接合体及びその製造方法
JP2012173448A (ja) * 2011-02-21 2012-09-10 Seiko Epson Corp 画像形成装置、画像形成方法
JP2013049466A (ja) * 2011-08-31 2013-03-14 Sanyu Kikaku:Kk 収納用トレー
JP2013058412A (ja) * 2011-09-08 2013-03-28 Sekisui Chem Co Ltd 絶縁材料、積層体、接続構造体、積層体の製造方法及び接続構造体の製造方法
JP2013105636A (ja) * 2011-11-14 2013-05-30 Dexerials Corp 異方性導電フィルム、接続方法、及び接合体
JP2013149466A (ja) 2012-01-19 2013-08-01 Sekisui Chem Co Ltd 異方性導電材料、接続構造体及び接続構造体の製造方法

Also Published As

Publication number Publication date
US20160345442A1 (en) 2016-11-24
CN105940559A (zh) 2016-09-14
KR20160117456A (ko) 2016-10-10
WO2015119095A1 (ja) 2015-08-13
JP2015149132A (ja) 2015-08-20
JP6260313B2 (ja) 2018-01-17
CN105940559B (zh) 2020-07-10
US10849236B2 (en) 2020-11-24
KR102450709B1 (ko) 2022-10-06
TWI651195B (zh) 2019-02-21

Similar Documents

Publication Publication Date Title
TW201422745A (zh) 異向性導電膜及其製造方法
TWI777304B (zh) 異向性導電膜、連接構造體及其製造方法
JP2017022017A (ja) 異方性導電フィルム及び接続構造体
TW201543506A (zh) 異向性導電膜及其製造方法
JP6428325B2 (ja) 異方性導電フィルム及びその製造方法
TWI648156B (zh) 異向性導電膜及其製造方法
TW201542361A (zh) 異向性導電膜及其製造方法
TWI723561B (zh) 異向性導電膜及其製造方法
JP6409281B2 (ja) 異方性導電フィルム及びその製造方法
TW201606036A (zh) 異向性導電膜及其製造方法
JP6260312B2 (ja) 異方性導電フィルム及びその製造方法
JP6233069B2 (ja) 異方性導電フィルム及びその製造方法
JP6217422B2 (ja) 異方性導電フィルム及びその製造方法