TW201540144A - Surface treatment copper foil, copper-clad lamination board, printed wiring board, electronic machine, circuit formation substrate and manufacturing method of semiconductor package and printed wiring board - Google Patents

Surface treatment copper foil, copper-clad lamination board, printed wiring board, electronic machine, circuit formation substrate and manufacturing method of semiconductor package and printed wiring board Download PDF

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TW201540144A
TW201540144A TW104108452A TW104108452A TW201540144A TW 201540144 A TW201540144 A TW 201540144A TW 104108452 A TW104108452 A TW 104108452A TW 104108452 A TW104108452 A TW 104108452A TW 201540144 A TW201540144 A TW 201540144A
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copper foil
group
release layer
resin substrate
treated copper
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TWI610599B (en
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Masafumi Ishii
Terumasa Moriyama
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Jx Nippon Mining & Metals Corp
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The present invention provides a surface treatment copper foil characterized in that when a resin substrate adheres onto a copper foil and then the copper foil is to be removed from the resin substrate, the copper foil can be removed at an excellent cost without performing an etching process and without damaging the contour of the surface of the copper foil transfer-printed on the surface of the resin substrate surface. The surface treatment copper foil of the present invention comprises: a copper foil having an uneven surface on which there is no coarse particle while an Rz measured according to JIS B0601(year of 1994) is 0.1-5.0 <mu>m, or a copper foil having coarse particles; and a mold release layer disposed on the surface of the copper foil having an uneven surface or on the surface of the copper foil having coarse particles, so as to peel off the resin substrate from the side of the mold release layer when the resin substrate adheres to the copper foil.

Description

表面處理銅箔、覆銅積層板、印刷配線板、電子機器、半導體封裝用電路形成基板、半導體封裝及印刷配線板之製造方法 Surface-treated copper foil, copper-clad laminate, printed wiring board, electronic device, circuit-formed substrate for semiconductor package, semiconductor package, and printed wiring board manufacturing method

本發明涉及一種表面處理銅箔、覆銅積層板、印刷配線板、電子機器、半導體封裝用電路形成基板、半導體封裝及印刷配線板之製造方法。 The present invention relates to a surface-treated copper foil, a copper-clad laminate, a printed wiring board, an electronic device, a circuit-formed substrate for semiconductor packaging, a semiconductor package, and a method of manufacturing a printed wiring board.

關於印刷配線基板及半導體封裝基板的電路形成法,減成法為主流,但隨著近年來進一步的微細配線化,M-SAP(Modified Semi-Additive Process)、或使用銅箔的表面輪廓的半加成法等新穎的工法興起。 In the circuit formation method of the printed wiring board and the semiconductor package substrate, the subtractive method is the mainstream. However, with the further fine wiring in recent years, M-SAP (Modified Semi-Additive Process) or half of the surface profile of the copper foil is used. New methods of construction such as the addition of the law have arisen.

這些新穎的電路形成法中,作為後者的使用銅箔的表面輪廓的半加成法的一例,可列舉如下。即,首先,將積層在樹脂基材的銅箔進行整面蝕刻,利用雷射等對轉印有銅箔表面輪廓的蝕刻基材面進行開孔,設置用以使開孔部導通的無電解鍍銅層,利用乾膜被覆無電解鍍銅表面,藉由UV曝光及顯影而將電路形成部的乾膜去除,對未被乾膜覆蓋的無電解鍍銅面實施電鍍銅,將乾膜進行剝離,最後利用含有硫酸、雙氧水的蝕刻液等對無電解鍍銅層進行蝕刻(快速蝕刻、迅速蝕刻),由此形成微細電路。此外,在本製程例中,用以無電解鍍銅的觸媒處理、用以使銅表面潔淨化的酸洗處理等各種各樣,其記載省略(日本專利文獻1、日本專利文獻2)。 Among these novel circuit formation methods, an example of a semi-additive method using the surface profile of the copper foil as the latter is as follows. In other words, first, the copper foil laminated on the resin substrate is etched over the entire surface, and the surface of the etched substrate on which the surface contour of the copper foil is transferred is opened by laser or the like, and electrolessness for conducting the opening portion is provided. The copper plating layer is coated with an electroless copper plating surface by a dry film, and the dry film of the circuit forming portion is removed by UV exposure and development, and the electroless copper plating surface not covered by the dry film is subjected to electroplating copper to carry out the dry film. After the peeling, the electroless copper plating layer is finally etched (rapid etching, rapid etching) using an etching solution containing sulfuric acid or hydrogen peroxide, thereby forming a fine circuit. In addition, in the present process example, the catalyst treatment for electroless copper plating, the pickling treatment for cleaning the surface of the copper, and the like are various, and the description thereof is omitted (Japanese Patent Document 1 and Japanese Patent Application No. 2).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[日本專利文獻1]日本特開2006-196863號公報 [Japanese Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-196863

[日本專利文獻2]日本特開2007-242975號公報 [Japanese Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-242975

在使用銅箔表面的輪廓的半加成法中,通常對積層在樹脂的銅箔進行蝕刻。然而,就蝕刻而言,所使用的藥液、排水處理等花費成本,進而對環境的負荷也較大。進而,在利用蝕刻將銅箔去除的情況下,雖也取決於基材種類及蝕刻條件,但也有損傷銅箔表面的輪廓之虞。因此,利用蝕刻的銅箔去除欠佳。 In the semi-additive method using the outline of the surface of the copper foil, the copper foil laminated on the resin is usually etched. However, in terms of etching, the chemical liquid used, the drainage treatment, and the like are costly, and the load on the environment is also large. Further, in the case where the copper foil is removed by etching, depending on the type of the substrate and the etching conditions, the contour of the surface of the copper foil may be damaged. Therefore, the use of the etched copper foil is poorly removed.

本發明人等進行努力研究,結果發現,對於具有表面凹凸或粗化粒子的銅箔而言,在該銅箔設置脫模層而使將銅箔貼合於樹脂基材時的樹脂基材可物理剝離,由此在將銅箔自樹脂基材進行去除的步驟中,無需進行蝕刻,不會損傷轉印在樹脂基材的表面的銅箔表面的輪廓,可以良好的成本將銅箔去除。 As a result of intensive studies, the present inventors have found that a copper foil having surface irregularities or roughened particles can be provided with a release layer on the copper foil to bond the copper foil to the resin substrate. Physical peeling eliminates the need to perform etching in the step of removing the copper foil from the resin substrate, and does not damage the contour of the surface of the copper foil transferred onto the surface of the resin substrate, and the copper foil can be removed at a good cost.

基於以上見解而完成的本發明在一個態樣是一種表面處理銅箔,其具備:銅箔,其是不具有粗化粒子,且依據JIS B0601(1994年)所測得之Rz為0.1~5.0μm的具有表面凹凸之銅箔;與脫模層,其是設置在上述銅箔之具有表面凹凸的面之脫模層,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離。 The present invention based on the above findings is, in one aspect, a surface-treated copper foil comprising: a copper foil which does not have roughened particles, and has an Rz of 0.1 to 5.0 as measured according to JIS B0601 (1994). a copper foil having a surface unevenness of μm; and a release layer which is a release layer provided on a surface of the copper foil having surface unevenness, and is bonded to the copper foil from the release layer side to the resin substrate The above resin substrate can be peeled off.

本發明在另一個態樣是一種表面處理銅箔,其具備:銅箔, 其具有粗化粒子;與脫模層,其設置在上述銅箔的粗化粒子面,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離。 In another aspect, the invention is a surface treated copper foil comprising: copper foil, It has roughened particles, and the release layer is provided on the roughened particle surface of the copper foil, and the resin substrate when the resin substrate is bonded to the copper foil from the release layer side is peelable.

在本發明的表面處理銅箔的一個實施形態中,從上述脫模層 側向上述銅箔貼合樹脂基材時,上述樹脂基材進行剝離時的剝離強度為200gf/cm以下。 In one embodiment of the surface treated copper foil of the present invention, the release layer is When the resin substrate is bonded to the copper foil in the lateral direction, the peel strength at the time of peeling off the resin substrate is 200 gf/cm or less.

在本發明的表面處理銅箔的又一個實施形態中,上述脫模層 是將下式所示之矽烷化合物、其水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, In still another embodiment of the surface-treated copper foil of the present invention, the release layer is formed by using a decane compound represented by the following formula, a hydrolyzed product thereof, or a condensate of the hydrolyzed product, either alone or in combination.

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基)。 (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; And any one of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms are substituted. Any of these hydrocarbon groups which are halogen atoms).

在本發明的表面處理銅箔的又一個實施形態中,上述脫模層是使用分子內具有2個以下之巰基的化合物而成。 In still another embodiment of the surface-treated copper foil of the present invention, the release layer is a compound having two or less sulfhydryl groups in the molecule.

在本發明的表面處理銅箔的又一個實施形態中,上述脫模層是將下式所示的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、該等水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, (R1)m-M-(R2)n In still another embodiment of the surface-treated copper foil of the present invention, the release layer is an aluminate compound, a titanate compound, a zirconate compound, or a hydrolyzate produced by the following formula, and the hydrolysis is formed. The condensate of the substance is used alone or in combination of a plurality of types, (R 1 ) m -M-(R 2 ) n

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基,此外,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4)。 (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; Any one of the hydrocarbon groups, M is any one of Al, Ti, and Zr, n is 0 or 1 or 2, m is an integer of 1 or more and a valence of M or less, and at least one of R 1 is an alkoxy group. m+n is the valence of M, that is, 3 in the case of Al and 4 in the case of Ti and Zr.

在本發明的表面處理銅箔的又一個實施形態中,在上述銅箔與上述脫模層之間設置有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的一種以上的層。 In still another embodiment of the surface-treated copper foil of the present invention, the heat-resistant layer, the rust-preventing layer, the chromate-treated layer, and the decane coupling treatment layer are provided between the copper foil and the release layer. More than one layer in the group.

在本發明的表面處理銅箔的又一個實施形態中,在上述表面處理銅箔的表面設置有樹脂層。 In still another embodiment of the surface-treated copper foil of the present invention, a resin layer is provided on a surface of the surface-treated copper foil.

在本發明的表面處理銅箔的又一個實施形態中,上述樹脂層為接合用樹脂、底漆或半硬化狀態的樹脂。 In still another embodiment of the surface-treated copper foil of the present invention, the resin layer is a resin for bonding, a primer, or a resin in a semi-hardened state.

在本發明的表面處理銅箔的又一個實施形態中,上述表面處理銅箔的厚度為9~70μm。 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated copper foil has a thickness of 9 to 70 μm.

另外,在本發明的表面處理銅箔的又一個實施形態中,本發明的表面處理銅箔可用於印刷配線板之製造方法,該製造方法具備下述步驟:從上述脫模層側將樹脂基材貼合在上述表面處理銅箔的步驟;獲得藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離而在剝離面轉印有上述銅箔的表面輪廓的樹脂基材的步驟;及在轉印有上述表面輪廓的樹脂基材的上述剝離面側形成電路的步驟。 Further, in still another embodiment of the surface-treated copper foil of the present invention, the surface-treated copper foil of the present invention can be used in a method for producing a printed wiring board, which has the following steps: a resin base from the side of the release layer a step of bonding the surface-treated copper foil to the surface, and obtaining a resin base on which the surface profile of the copper foil is transferred on the release surface by peeling the surface-treated copper foil from the resin substrate without etching. And a step of forming a circuit on the side of the peeling surface of the resin substrate to which the surface profile is transferred.

另外,在本發明的表面處理銅箔的又一個實施形態中,本發明的表面處理銅箔具備:銅箔,其是不具有粗化粒子,且依據JIS B0601(1994年)所測得之Rz為0.1~5.0μm的具有表面凹凸之銅箔;與脫模層,其是設置在上述銅箔之具有表面凹凸的面之脫模層,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離;或者具備:銅箔,其具有粗化粒子;與脫模層,其是設置在上述銅箔之粗化粒子面的脫模層,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離;且滿足以下(A)~(I)中的任一項以上。 Further, in still another embodiment of the surface-treated copper foil of the present invention, the surface-treated copper foil of the present invention comprises: a copper foil which does not have roughened particles, and which is Rz measured according to JIS B0601 (1994). a copper foil having surface irregularities of 0.1 to 5.0 μm; and a release layer which is a release layer provided on a surface of the copper foil having surface irregularities, and which is bonded to the copper foil from the side of the release layer The resin substrate may be peeled off when the resin substrate is used, or may have a copper foil having roughened particles, and a release layer which is a release layer provided on the roughened particle surface of the copper foil, and The resin base material when the resin layer is bonded to the copper foil on the side of the release layer is peelable; and any one of the following (A) to (I) is satisfied.

(A)從上述脫模層側向上述銅箔貼合樹脂基材時,將上述樹脂基材進行剝離時的剝離強度為200gf/cm以下;(B)上述脫模層是將下式所示之矽烷化合物、其水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, (A) When the resin substrate is bonded to the copper foil from the release layer side, the peel strength when the resin substrate is peeled off is 200 gf/cm or less; (B) the release layer is represented by the following formula The decane compound, the hydrolyzate thereof, and the condensate of the hydrolyzate are used singly or in combination of two or more.

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基);(C)上述脫模層是使用分子內具有2個以下之巰基的化合物而成; (D)上述脫模層是將下式所示的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、該等水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成,(R1)m-M-(R2)n (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; And any one of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms are substituted. (C) the above-mentioned release layer is a compound having two or less mercapto groups in the molecule; (D) the above release layer is an aluminate represented by the following formula The compound, the titanate compound, the zirconate compound, the hydrolyzate, and the condensate of the hydrolyzate are used singly or in combination of two or more, (R 1 ) m -M-(R 2 ) n

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基,此外,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4);(E)在上述銅箔與上述脫模層之間設置有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的一種以上的層;(F)在上述表面處理銅箔的表面設置有樹脂層;(G)在上述(F)中,上述樹脂層為接合用樹脂、底漆或半硬化狀態的樹脂;(H)上述表面處理銅箔的厚度為9~70μm;(I)可用於印刷配線板之製造方法,該製造方法具備下述步驟:從上述脫模層側將樹脂基材貼合在上述表面處理銅箔的步驟;獲得藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離而在剝離面轉印有上述銅箔的表面輪廓之樹脂基材的步驟;及在轉印有上述表面輪廓之樹脂基材的上述剝離面側形成電路的步驟。 (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; Any one of the hydrocarbon groups, M is any one of Al, Ti, and Zr, n is 0 or 1 or 2, m is an integer of 1 or more and a valence of M or less, and at least one of R 1 is an alkoxy group. m+n is a valence of M, that is, 3 in the case of Al, and 4 in the case of Ti and Zr; (E) is provided between the copper foil and the above-mentioned release layer. One or more layers of the heat-resistant layer, the rust-preventive layer, the chromate-treated layer, and the decane coupling treatment layer; (F) a resin layer is provided on the surface of the surface-treated copper foil; (G) is as described above ( In F), the resin layer is a resin for bonding, a primer or a resin in a semi-hardened state; (H) the surface-treated copper foil has a thickness of 9 to 70 μm; (I) a method for producing a printed wiring board, the manufacturing method The method comprises the steps of: bonding a resin substrate to the surface-treated copper foil from the side of the release layer; obtaining the surface-treated copper foil by not etching a step of peeling the resin substrate from the resin substrate, transferring a resin substrate having a surface profile of the copper foil on the release surface, and forming a circuit on the peeling surface side of the resin substrate having the surface profile transferred thereto .

本發明在另一個態樣係一種覆銅積層板,其具備:本發明的表面處理銅箔、與設置在上述表面處理銅箔之脫模層側的樹脂基材。 In another aspect, the present invention provides a copper clad laminate comprising: a surface-treated copper foil of the present invention; and a resin substrate provided on a side of the release layer of the surface-treated copper foil.

本發明的覆銅積層板的上述樹脂基材為預浸體,或含有熱硬化性樹脂。 The resin substrate of the copper-clad laminate of the present invention is a prepreg or a thermosetting resin.

本發明在又一個態樣是一種印刷配線板,其使用本發明之表面處理銅箔。 Still another aspect of the invention is a printed wiring board using the surface treated copper foil of the present invention.

本發明在又一個態樣是一種印刷配線板,其係使用本發明之表面處理銅箔而製造。 In still another aspect of the invention, a printed wiring board is manufactured using the surface treated copper foil of the present invention.

本發明在又一個態樣是一種半導體封裝,其具備本發明之印刷配線板。 Still another aspect of the invention is a semiconductor package comprising the printed wiring board of the invention.

本發明在又一個態樣是一種電子機器,其使用本發明之印刷配線板或半導體封裝。 Yet another aspect of the invention is an electronic machine using the printed wiring board or semiconductor package of the present invention.

本發明在又一個態樣是一種印刷配線板之製造方法,其具備:從上述脫模層側將樹脂基材貼合在本發明的表面處理銅箔的步驟;藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離,而獲得在剝離面轉印有上述銅箔的表面輪廓的樹脂基材的步驟;及在轉印有上述表面輪廓的樹脂基材的上述剝離面側形成電路的步驟。 According to still another aspect of the invention, there is provided a method of producing a printed wiring board comprising: a step of bonding a resin substrate to the surface-treated copper foil of the present invention from the side of the release layer; and the surface-treated copper foil a step of removing the resin substrate from which the surface profile of the copper foil is transferred on the release surface without peeling off from the resin substrate; and the peeling of the resin substrate on which the surface profile is transferred The step of forming a circuit on the face side.

另外,本發明在又一個態樣是一種樹脂基材,其是從上述脫模層側將樹脂基材貼合在本發明的表面處理銅箔後,藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離而在剝離面轉印有上述銅箔之表面輪廓的樹脂基材。 Further, in still another aspect of the invention, a resin substrate is obtained by laminating a resin substrate from the side of the release layer to the surface-treated copper foil of the present invention, and the surface-treated copper foil is not subjected to In the case of etching, the resin substrate is peeled off from the resin substrate and the surface profile of the copper foil is transferred onto the release surface.

本發明提供一種向銅箔貼合樹脂基材後,將銅箔自樹脂基材去除時,無需進行蝕刻,不會損傷轉印在樹脂基材的表面的銅箔表面的輪 廓,可以良好的成本將銅箔去除的表面處理銅箔。 The present invention provides a wheel which does not need to be etched and which does not damage the surface of the copper foil transferred onto the surface of the resin substrate when the copper foil is bonded to the resin substrate after the resin substrate is bonded to the copper foil. The surface treated copper foil can be removed from the copper foil at a good cost.

圖1是表示使用銅箔的輪廓的半加成法的概略例。 Fig. 1 is a schematic view showing a semi-additive method using a contour of a copper foil.

本發明的表面處理銅箔具備:銅箔,其是不具有粗化粒子,且依據JIS B0601(1994年)所測得之Rz為0.1~5.0μm的具有表面凹凸之銅箔;與脫模層,其是設置在銅箔之具有表面凹凸的面之脫模層,且使從脫模層側向銅箔貼合樹脂基材時之樹脂基材可剝離。此外,脫模層也可設置在銅箔的兩面。另外,關於貼合,也可進行壓接而進行貼合。 The surface-treated copper foil of the present invention comprises: a copper foil which is a copper foil having surface irregularities which does not have roughened particles and has an Rz of 0.1 to 5.0 μm as measured according to JIS B0601 (1994); and a release layer This is a release layer provided on the surface of the copper foil having the surface unevenness, and the resin substrate can be peeled off when the resin substrate is bonded to the copper foil from the release layer side. Further, the release layer may be provided on both sides of the copper foil. Further, the bonding may be performed by pressure bonding and bonding.

本發明的表面處理銅箔在另一個態樣具備:銅箔,其具有粗化粒子;與脫模層,其設置在上述銅箔的粗化面,且使從脫模層側向銅箔貼合樹脂基材時的樹脂基材可剝離。此外,脫模層也可設置在銅箔的兩面。 In another aspect, the surface-treated copper foil of the present invention comprises: a copper foil having roughened particles; and a release layer provided on the roughened surface of the copper foil, and pasting the copper foil from the side of the release layer The resin substrate at the time of the resin substrate can be peeled off. Further, the release layer may be provided on both sides of the copper foil.

銅箔(也稱為生箔)也可由電解銅箔或壓延銅箔中的任一種形成。銅箔的厚度沒有特別限定,例如可設為5~105μm。另外,就自樹脂基材的剝離變容易的方面而言,表面處理銅箔的厚度較佳為9~70μm,更佳為12~35μm,進而更佳為18~35μm。 The copper foil (also referred to as a green foil) may also be formed of any one of an electrolytic copper foil or a rolled copper foil. The thickness of the copper foil is not particularly limited and may be, for example, 5 to 105 μm. Further, the thickness of the surface-treated copper foil is preferably from 9 to 70 μm, more preferably from 12 to 35 μm, even more preferably from 18 to 35 μm, from the viewpoint that the peeling of the resin substrate is facilitated.

作為銅箔(生箔)的製造方法,沒有特別限定,例如在製造普通電解生箔的情況下,可將電解條件設為下述。 The method for producing the copper foil (raw foil) is not particularly limited. For example, in the case of producing a conventional electrolytic green foil, the electrolytic conditions can be set as follows.

普通電解生箔的電解條件:Cu:80~120g/L Electrolytic conditions for ordinary electrolytic foil: Cu: 80~120g/L

H2SO4:80~120g/L H 2 SO 4 : 80~120g/L

氯化物離子(Cl):30~100ppm Chloride ion (Cl): 30~100ppm

均化劑(膠):0.1~10ppm Leveling agent (glue): 0.1~10ppm

電解液溫度:50~65℃ Electrolyte temperature: 50~65°C

電解時間:10~300秒(根據所析出的銅厚、電流密度進行調整) Electrolysis time: 10~300 seconds (adjusted according to the copper thickness and current density)

電流密度:50~150A/dm2 Current density: 50~150A/dm 2

電解液線速:1.5~5m/sec Electrolyte line speed: 1.5~5m/sec

另外,在製作兩面平坦之電解生箔的情況下,可將電解條件設為下述。 Further, in the case of producing an electrolytic green foil having a flat surface on both sides, the electrolysis conditions can be set as follows.

兩面平坦電解生箔的電解條件 Electrolytic conditions for flat electrolyzed foil on both sides

銅:80~120g/L Copper: 80~120g/L

硫酸:80~120g/L Sulfuric acid: 80~120g/L

氯:30~100ppm Chlorine: 30~100ppm

均化劑1(雙(3-磺丙基)二硫化物):10~30ppm Homogenizer 1 (bis(3-sulfopropyl) disulfide): 10~30ppm

均化劑2(胺化合物):10~30ppm Leveling agent 2 (amine compound): 10~30ppm

電解液溫度:50~65℃ Electrolyte temperature: 50~65°C

電解時間:0.5~10分鐘(根據所析出的銅厚、電流密度進行調整) Electrolysis time: 0.5 to 10 minutes (adjusted according to the copper thickness and current density)

電流密度:70~100A/dm2 Current density: 70~100A/dm 2

電解液線速:1.5~5m/sec Electrolyte line speed: 1.5~5m/sec

上述胺化合物可使用以下的化學式的胺化合物。 As the above amine compound, an amine compound of the following chemical formula can be used.

(上述化學式中,R1及R2為選自由羥烷基、醚基、芳基、芳香族取代烷基、不飽和烴基、烷基所組成之群中者)。 (In the above chemical formula, R 1 and R 2 are those selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group).

本發明中自銅箔將樹脂基材進行「剝離」,意指藉由剝離等而自銅箔將樹脂基材物理剝離而並非藉由利用蝕刻等的化學處理而自樹脂基材將銅箔去除。將樹脂基材如上述般與本發明的表面處理銅箔貼合後進行剝離時,樹脂基材與表面處理銅箔在脫模層分離,但此時也可在樹脂基材的剝離面殘留剝離層、下述的銅箔的粗化粒子、耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層等的一部分,但較佳為不存在殘留物。 In the present invention, the "removal" of the resin substrate from the copper foil means that the resin substrate is physically peeled off from the copper foil by peeling or the like, and the copper foil is not removed from the resin substrate by chemical treatment such as etching. . When the resin substrate is bonded to the surface-treated copper foil of the present invention as described above and then peeled off, the resin substrate and the surface-treated copper foil are separated from the release layer. However, in this case, the release surface of the resin substrate may be peeled off. A layer, a roughened particle of the following copper foil, a heat-resistant layer, a rust preventive layer, a chromate-treated layer, a decane coupling treatment layer, or the like, but preferably no residue.

關於本發明的表面處理銅箔,在自脫模層側向銅箔貼合樹脂基材時,將樹脂基材剝離時的剝離強度較佳為200gf/cm以下。如果如此進行控制,則樹脂基材的物理剝離變容易,而更良好地將銅箔表面的輪廓轉印至樹脂基材。該剝離強度更佳為150gf/cm以下,進而更佳為100gf/cm以下,進而更佳為50gf/cm以下,典型而言為1~200gf/cm,更典型而言為1~150gf/cm。 In the surface-treated copper foil of the present invention, when the resin substrate is bonded to the copper foil from the side of the release layer, the peel strength at the time of peeling off the resin substrate is preferably 200 gf/cm or less. By controlling in this way, physical peeling of the resin substrate becomes easy, and the contour of the surface of the copper foil is more favorably transferred to the resin substrate. The peel strength is more preferably 150 gf/cm or less, still more preferably 100 gf/cm or less, still more preferably 50 gf/cm or less, and typically 1 to 200 gf/cm, and more typically 1 to 150 gf/cm.

關於本發明的表面處理銅箔,在一個態樣,銅箔的表面被設為不具有粗化粒子,且依據JIS B0601(1994年)所測得之Rz為0.1~5.0μm 的具有凹凸的表面,或者具有粗化粒子的表面。根據此種構成,將表面處理銅箔貼合於樹脂基材後將銅箔進行剝離時,儘管在樹脂基材表面轉印有銅箔表面的輪廓,但可以低剝離容易地進行剝離。另外,將銅箔表面的輪廓牢固地轉印至樹脂基材表面,進而由此可充分確保在半加成步驟中的無電解‧電鍍銅的密接性。 Regarding the surface-treated copper foil of the present invention, in one aspect, the surface of the copper foil is set to have no roughened particles, and the Rz measured according to JIS B0601 (1994) is 0.1 to 5.0 μm. a surface having irregularities or a surface having roughened particles. According to this configuration, when the surface-treated copper foil is bonded to the resin substrate and the copper foil is peeled off, the surface of the copper foil is transferred onto the surface of the resin substrate, but the peeling can be easily performed with low peeling. Further, the contour of the surface of the copper foil is firmly transferred to the surface of the resin substrate, whereby the adhesion of the electroless ‧ electroplated copper in the semi-additive step can be sufficiently ensured.

作為形成在銅箔表面的粗化粒子層,可使用由包含選自硫酸烷基酯鹽、鎢離子、砷離子的物質中的至少1種以上的硫酸‧硫酸銅所組成的電解浴而形成,且由球狀粒子或微細粒子所組成。粗化粒子層的表面粗糙度可藉由適當調整電解處理條件而進行控制。另外,如果在銅箔由電解銅箔構成的情況下,則也可將該電解銅箔的無光澤面設為銅箔的粗化面。電解銅箔的無光澤面的表面粗糙度可藉由適當調整電解處理條件而進行控制。 The roughened particle layer formed on the surface of the copper foil can be formed by using an electrolytic bath composed of at least one of sulfuric acid and copper sulfate containing at least one selected from the group consisting of an alkyl sulfate salt, a tungsten ion, and an arsenic ion. It is composed of spherical particles or fine particles. The surface roughness of the roughened particle layer can be controlled by appropriately adjusting the electrolytic treatment conditions. Further, when the copper foil is made of an electrolytic copper foil, the matte side of the electrolytic copper foil may be a roughened surface of the copper foil. The surface roughness of the matte side of the electrolytic copper foil can be controlled by appropriately adjusting the electrolytic treatment conditions.

該粗化粒子層可使用由包含選自硫酸烷基酯鹽、鎢離子、砷離子的物質中的至少1種以上的硫酸‧硫酸銅所組成的電解浴而進行製造。具體的處理條件的例如下所述。 The roughened particle layer can be produced by using an electrolytic bath composed of at least one of sulfuric acid and copper sulfate containing at least one selected from the group consisting of an alkyl sulfate salt, a tungsten ion, and an arsenic ion. Specific processing conditions are as follows, for example.

(液組成1) (liquid composition 1)

CuSO4‧5H2O 39.3~118g/L CuSO 4 ‧5H 2 O 39.3~118g/L

Cu 10~30g/L Cu 10~30g/L

H2SO4 10~150g/L H 2 SO 4 10~150g/L

Na2WO4‧2H2O 0~90mg/L Na 2 WO 4 ‧2H 2 O 0~90mg/L

W 0~50mg/L W 0~50mg/L

十二烷基硫酸鈉添加量0~50pp Sodium lauryl sulfate added 0~50pp

H3AsO3(60%水溶液)0~6315mg/L H 3 AsO 3 (60% aqueous solution) 0~6315mg/L

As 0~2000mg/L As 0~2000mg/L

(電鍍條件1) (plating condition 1)

溫度30~70℃ Temperature 30~70°C

(電流條件1) (current condition 1)

電流密度25~110A/dm2 Current density 25~110A/dm 2

鍍敷時間0.5~20秒 Plating time 0.5~20 seconds

(液組成2) (liquid composition 2)

CuSO4‧5H2O 78~314g/L CuSO 4 ‧5H 2 O 78~314g/L

Cu 20~80g/L Cu 20~80g/L

H2SO4 50~200g/L H 2 SO 4 50~200g/L

(電鍍條件2) (plating condition 2)

溫度30~70℃ Temperature 30~70°C

(電流條件2) (current condition 2)

電流密度5~50A/dm2 Current density 5~50A/dm 2

鍍敷時間1~60秒 Plating time 1~60 seconds

另外,粗化粒子層也可以下述方式形成。首先,形成Cu-Co-Ni三元系合金層。Co及Ni含量為1~4品質%Co及0.5~1.5品質%Ni。將該三元系合金鍍敷的處理條件示於以下。 Further, the roughened particle layer can also be formed in the following manner. First, a Cu-Co-Ni ternary alloy layer is formed. The Co and Ni contents are 1 to 4% by mass Co and 0.5 to 1.5% by mass of Ni. The processing conditions of the ternary alloy plating are shown below.

(液組成) (liquid composition)

Cu 10~20g/L Cu 10~20g/L

Co 1~10g/L Co 1~10g/L

Ni 1~10g/L Ni 1~10g/L

pH值1~4 pH 1~4

(電鍍條件) (plating conditions)

溫度40~50℃ Temperature 40~50°C

電流密度20~30A/dm2 Current density 20~30A/dm 2

處理時間1~5秒 Processing time 1~5 seconds

上述粗化處理後,在其上進行2次鍍敷而形成鍍鈷層或由鈷及鎳所組成的鍍敷層。鍍鈷或鈷及鎳鍍敷的條件如下所述。 After the above-described roughening treatment, plating is performed twice to form a cobalt plating layer or a plating layer composed of cobalt and nickel. The conditions for cobalt plating or cobalt and nickel plating are as follows.

‧鍍鈷 ‧Cobalt plating

(液組成) (liquid composition)

鍍鈷Co 1~30g/L Cobalt-coated Co 1~30g/L

pH值1.0~3.5 pH 1.0~3.5

(電鍍條件) (plating conditions)

溫度30~80℃ Temperature 30~80°C

電流密度1~10A/dm2 Current density 1~10A/dm 2

處理時間0.5~4秒 Processing time 0.5~4 seconds

‧鈷-鎳鍍敷 ‧Cobalt-nickel plating

(液組成) (liquid composition)

Co 1~30g/L、Ni 1~30g/L Co 1~30g/L, Ni 1~30g/L

pH值1.0~3.5 pH 1.0~3.5

(電鍍條件) (plating conditions)

溫度30~80℃ Temperature 30~80°C

電流密度1~10A/dm2 Current density 1~10A/dm 2

處理時間0.5~4秒 Processing time 0.5~4 seconds

另外,粗化粒子層也可藉由球狀粗化而形成。在以下表示其處理條件的例。 Further, the roughened particle layer may be formed by spherical roughening. An example of the processing conditions thereof is shown below.

(液組成) (liquid composition)

Cu 20~30g/L(以硫酸銅5水合物進行添加,以下相同) Cu 20~30g/L (added as copper sulfate 5 hydrate, the same applies below)

H2SO4 80~120g/L H 2 SO 4 80~120g/L

砷1.0~2.0g/L Arsenic 1.0~2.0g/L

(電鍍條件) (plating conditions)

溫度35~40℃ Temperature 35~40°C

電流密度70A/dm2(浴的極限電流密度以上) Current density 70A/dm 2 (above the limit current density of the bath)

處理時間0.5~20秒 Processing time 0.5~20 seconds

針對以上述條件實施了粗化鍍敷的表面,為了防止粗化粒子的脫落,而利用由硫酸‧硫酸銅所組成的銅電解浴進行鍍敷。將鍍敷條件的例示於以下。 The surface on which the roughening plating was carried out under the above conditions was plated by a copper electrolytic bath composed of sulfuric acid and copper sulfate in order to prevent the coarse particles from falling off. Examples of plating conditions are shown below.

(液組成) (liquid composition)

Cu 40~50g/L Cu 40~50g/L

H2SO4 80~120g/L H 2 SO 4 80~120g/L

(電鍍條件) (plating conditions)

溫度43~47℃ Temperature 43~47°C

電流密度29A/dm2[未達浴的極限電流密度] Current density 29A/dm 2 [Unlimited bath current limit]

處理時間0.5~20秒 Processing time 0.5~20 seconds

銅箔的不具有粗化粒子,且依據JIS B0601(1994年)所測得之Rz為0.1~5.0μm的具有凹凸的表面、或具有粗化粒子的表面較佳為表面粗糙度Rz為0.1~5.0μm。如果表面粗糙度Rz未達0.1μm,則有產生如下問題之虞,即無法充分確保在半加成步驟中的無電解鍍銅的密接性,而在微細配線形成後配線剝離,如果表面粗糙度Rz超過5.0μm,則有產生在半加成步驟中的微細配線形成能力降低的問題之虞。表面粗糙度Rz更佳為0.2~4.0μm,進而更佳為0.3~3.5μm,進而更佳為0.4~3.0μm。 The surface of the copper foil which does not have roughened particles and which has an unevenness with an Rz of 0.1 to 5.0 μm measured according to JIS B0601 (1994) or a surface having roughened particles preferably has a surface roughness Rz of 0.1~ 5.0 μm. When the surface roughness Rz is less than 0.1 μm, there is a problem in that the adhesion of the electroless copper plating in the semi-additive step cannot be sufficiently ensured, and the wiring is peeled off after the formation of the fine wiring, if the surface roughness is obtained. When Rz exceeds 5.0 μm, there is a problem that the fine wiring forming ability in the semi-addition step is lowered. The surface roughness Rz is more preferably 0.2 to 4.0 μm, still more preferably 0.3 to 3.5 μm, still more preferably 0.4 to 3.0 μm.

繼而,對本發明中可使用的脫模層進行說明。 Next, the release layer which can be used in the present invention will be described.

(1)矽烷化合物 (1) decane compound

將具有下式所示的結構的矽烷化合物、或其水解生成物、或該水解生成物的縮合物(以下,簡稱為矽烷化合物)單獨使用或混合多種使用而形成脫模層,由此在將表面處理銅箔與樹脂基材貼合時,密接性適當降低,而可將剝離強度調節為上述範圍。 A decane compound having a structure represented by the following formula, or a hydrolyzate thereof, or a condensate of the hydrolyzate (hereinafter, simply referred to as a decane compound) may be used alone or in combination to form a release layer, thereby When the surface-treated copper foil is bonded to the resin substrate, the adhesion is appropriately lowered, and the peel strength can be adjusted to the above range.

式: formula:

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基 及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的上述任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的上述任一種烴基)。 (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or the above one or more hydrogen atoms are substituted with a halogen atom; Any of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom, or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted Any of the above hydrocarbon groups of a halogen atom).

該矽烷化合物必須具有至少1個烷氧基。在烷氧基不存在而 僅由選自由烷基、環烷基及芳基所組成之群中的烴基、或者一個以上之氫原子被取代為鹵素原子的上述任一種烴基構成取代基的情況下,有樹脂基材與銅箔的密接性過於降低的傾向。另外,該矽烷化合物必須具有至少1個選自由烷基、環烷基及芳基所組成之群中的烴基、或者一個以上之氫原子被取代為鹵素原子的上述任一種烴基。其原因在於:在該烴基不存在的情況下,有樹脂基材與銅箔的密接性上升的傾向。此外,烷氧基也包括一個以上之氫原子被取代為鹵素原子的烷氧基。 The decane compound must have at least one alkoxy group. In the absence of alkoxy groups In the case where only a hydrocarbon group selected from a group consisting of an alkyl group, a cycloalkyl group, and an aryl group or a hydrocarbon group in which one or more hydrogen atoms are substituted with a halogen atom constitutes a substituent, there are a resin substrate and copper. The adhesion of the foil tends to be too low. Further, the decane compound must have at least one hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or any one of the above hydrocarbon groups in which one or more hydrogen atoms are substituted with a halogen atom. This is because when the hydrocarbon group is not present, the adhesion between the resin substrate and the copper foil tends to increase. Further, the alkoxy group also includes an alkoxy group in which one or more hydrogen atoms are substituted with a halogen atom.

在將樹脂基材與銅箔的剝離強度調節為上述範圍上,該矽烷 化合物較佳為具有3個烷氧基、1個上述烴基(包括一個以上之氫原子被取代為鹵素原子的烴基)。如果將其以上式表示,則R3及R4兩者為烷氧基。 The decane compound preferably has three alkoxy groups and one of the above hydrocarbon groups (including one or more hydrogen atoms substituted with a halogen atom). If it is represented by the above formula, both of R 3 and R 4 are alkoxy groups.

作為烷氧基,沒有限定,可列舉:甲氧基、乙氧基、正或異 丙氧基、正、異或三級丁氧基、正、異或新戊氧基、正己氧基、環己氧基、正庚氧基、及正辛氧基等直鏈狀、支鏈狀、或環狀的碳數1~20、較佳為碳 數1~10、更佳為碳數1~5的烷氧基。 The alkoxy group is not limited, and examples thereof include a methoxy group, an ethoxy group, and a positive or an equivalent. Linear or branched chain such as propoxy, n-, i- or ter-butoxy, n-, iso- or neopentyloxy, n-hexyloxy, cyclohexyloxy, n-heptyloxy, and n-octyloxy Or ring carbon number 1 to 20, preferably carbon The number is 1 to 10, more preferably an alkoxy group having 1 to 5 carbon atoms.

作為鹵素原子,可列舉:氟原子、氯原子、溴原子及碘原子。 Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

作為烷基,沒有限定,可列舉:甲基、乙基、正或異丙基、正、異或三級丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀的碳數1~20、較佳為碳數1~10、更佳為碳數1~5的烷基。 The alkyl group is not limited, and examples thereof include a methyl group, an ethyl group, a normal or isopropyl group, a normal, an iso or a tertiary butyl group, a normal, an iso- or neopentyl group, a n-hexyl group, an n-octyl group, a n-decyl group, and the like. The linear or branched carbon number is 1 to 20, preferably 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 5 carbon atoms.

作為環烷基,沒有限定,可列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7的環烷基。 The cycloalkyl group is not limited, and examples thereof include a ring having a carbon number of 3 to 10, preferably a carbon number of 5 to 7 such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group or a cyclooctyl group. alkyl.

作為芳基,可列舉:苯基、經烷基取代的苯基(例如:甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14的芳基。 Examples of the aryl group include a phenyl group, an alkyl group-substituted phenyl group (for example, tolyl group, xylyl group), a 1- or 2-naphthyl group, and a fluorenyl group having 6 to 20 carbon atoms, preferably 6 to 6 14 aryl groups.

這些烴基可一個以上之氫原子被取代為鹵素原子,例如可經氟原子、氯原子、或溴原子取代。 These hydrocarbon groups may be substituted with one or more hydrogen atoms into a halogen atom, for example, may be substituted by a fluorine atom, a chlorine atom, or a bromine atom.

作為較佳的矽烷化合物的例,可列舉:甲基三甲氧基矽烷、乙基三甲氧基矽烷、正或異丙基三甲氧基矽烷、正、異或三級丁基三甲氧基矽烷、正、異或新戊基三甲氧基矽烷、己基三甲氧基矽烷、辛基三甲氧基矽烷、癸基三甲氧基矽烷、苯基三甲氧基矽烷;烷基取代苯基三甲氧基矽烷(例如,對(甲基)苯基三甲氧基矽烷)、甲基三乙氧基矽烷、乙基三乙氧基矽烷、正或異丙基三乙氧基矽烷、正、異或三級丁基三乙氧基矽烷、戊基三乙氧基矽烷、己基三乙氧基矽烷、辛基三乙氧基矽烷、癸基三乙氧基矽烷、苯基三乙氧基矽烷、烷基取代苯基三乙氧基矽烷(例如,對(甲基)苯基三乙氧基矽烷)、(3,3,3-三氟丙基)三甲氧基矽烷、及十三氟辛基三乙氧基矽烷、甲基三氯矽烷、二甲基二氯矽烷、三甲基氯矽烷、苯基三氯矽烷、三甲基氟矽烷、二甲基二溴矽烷、二苯基二溴矽烷、該等水解生 成物、及該等水解生成物的縮合物等。這些之中,就獲取的容易性的觀點而言,較佳為丙基三甲氧基矽烷、甲基三乙氧基矽烷、己基三甲氧基矽烷、苯基三乙氧基矽烷、癸基三甲氧基矽烷。 As an example of a preferable decane compound, methyl trimethoxy decane, ethyl trimethoxy decane, n- or isopropyl trimethoxy decane, n-, iso- or tri-butyl butyl trimethoxy decane, , iso- or neopentyltrimethoxydecane, hexyltrimethoxydecane, octyltrimethoxydecane, decyltrimethoxydecane, phenyltrimethoxydecane;alkyl-substituted phenyltrimethoxynonane (for example, P-(methyl)phenyltrimethoxydecane), methyltriethoxydecane, ethyltriethoxydecane, n- or isopropyltriethoxydecane, n-, iso- or tert-butyl butyl triethyl Oxy decane, pentyl triethoxy decane, hexyl triethoxy decane, octyl triethoxy decane, decyl triethoxy decane, phenyl triethoxy decane, alkyl substituted phenyl triethyl Oxydecane (for example, p-(methyl)phenyltriethoxydecane), (3,3,3-trifluoropropyl)trimethoxynonane, and tridecafluorooctyltriethoxydecane, A Trichloromethane, dimethyl dichlorodecane, trimethylchlorodecane, phenyl trichlorodecane, trimethylfluorodecane, dimethyl dibromodecane, diphenyl Bromodecane, such hydrolyzed A product, a condensate of the hydrolyzed product, and the like. Among these, from the viewpoint of easiness of availability, propyltrimethoxydecane, methyltriethoxydecane, hexyltrimethoxydecane, phenyltriethoxydecane, decyltrimethoxy is preferred. Base decane.

在脫模層的形成步驟中,矽烷化合物可以水溶液的形態使 用。為了提高對水的溶解性,還可添加甲醇或乙醇等醇。醇的添加在特別是使用疏水性較高的矽烷化合物時有效。矽烷化合物的水溶液是藉由進行攪拌而促進烷氧基的水解,如果攪拌時間較長,則促進水解生成物的縮合。 通常而言,使用經過充分的攪拌時間而進行水解及縮合的矽烷化合物時,有樹脂基材與銅箔的剝離強度降低的傾向。因此,可藉由攪拌時間的調整而調整剝離強度。雖然沒有限定,但作為使矽烷化合物溶解于水後的攪拌時間,例如可設為1~100小時,典型而言,可設為1~30小時。當然,也有不攪拌而使用的方法。 In the step of forming the release layer, the decane compound may be in the form of an aqueous solution. use. In order to improve the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of an alcohol is effective especially when a highly hydrophobic decane compound is used. The aqueous solution of the decane compound accelerates the hydrolysis of the alkoxy group by stirring, and if the stirring time is long, the condensation of the hydrolyzate is promoted. In general, when a decane compound which undergoes hydrolysis and condensation after a sufficient stirring time is used, the peel strength of the resin substrate and the copper foil tends to decrease. Therefore, the peel strength can be adjusted by the adjustment of the stirring time. Although not limited, the stirring time after dissolving the decane compound in water can be, for example, 1 to 100 hours, and typically 1 to 30 hours. Of course, there are also methods that are used without stirring.

矽烷化合物的水溶液中的矽烷化合物的濃度較高時,有金屬 箔與板狀載體的剝離強度降低的傾向,可藉由矽烷化合物的濃度調整而調整剝離強度。雖然沒有限定,但矽烷化合物的水溶液中的濃度可設為0.01~10.0體積%,典型而言,可設為0.1~5.0體積%。 When the concentration of the decane compound in the aqueous solution of the decane compound is high, there is a metal The peeling strength of the foil and the plate-shaped carrier tends to decrease, and the peel strength can be adjusted by adjusting the concentration of the decane compound. Although not limited, the concentration in the aqueous solution of the decane compound can be set to 0.01 to 10.0% by volume, and typically 0.1 to 5.0% by volume.

矽烷化合物的水溶液的pH值沒有特別限制,無論是酸性側 還是鹼性側都可應用。例如可以3.0~10.0的範圍的pH值進行使用。就無需特別調整pH值的觀點而言,較佳為設為作為中性附近的5.0~9.0的範圍的pH值,更佳為設為7.0~9.0的範圍的pH值。 The pH of the aqueous solution of the decane compound is not particularly limited, regardless of the acidic side. It is also applicable on the alkaline side. For example, it can be used at a pH in the range of 3.0 to 10.0. From the viewpoint of not particularly adjusting the pH value, it is preferably a pH value in the range of 5.0 to 9.0 in the vicinity of neutrality, and more preferably a pH value in the range of 7.0 to 9.0.

(2)分子內具有2個以下之巰基的化合物 (2) Compounds having 2 or less sulfhydryl groups in the molecule

脫模層是使用分子內具有2個以上的巰基的化合物而構成,藉由隔著該脫模層將樹脂基材與銅箔進行貼合,從而密接性適當降低,而可調節剝離強度。 The release layer is formed by using a compound having two or more mercapto groups in the molecule, and the resin substrate and the copper foil are bonded together via the release layer, whereby the adhesion is appropriately lowered, and the peel strength can be adjusted.

其中,在使分子內具有3個以上的巰基的化合物或其鹽介於樹脂基材與銅箔之間而進行貼合的情況下,並不符合降低剝離強度的目的。可認為其原因在於:如果分子內巰基過量存在,則由於巰基彼此、或巰基與板狀載體、或巰基與金屬箔的化學反應而過量產生硫鍵、雙硫鍵或多硫鍵,從而在樹脂基材與銅箔之間形成牢固的三維交聯結構,由此剝離強度上升。 上述事例被揭示在日本特開2000-196207號公報中。 In the case where a compound having three or more mercapto groups in the molecule or a salt thereof is bonded between the resin substrate and the copper foil, the purpose of lowering the peel strength is not satisfied. It can be considered that the reason is that if the thiol group in the molecule is excessively present, the sulfur bond, the disulfide bond or the polysulfide bond is excessively generated due to the chemical reaction of the sulfhydryl group with each other, or the sulfhydryl group and the plate-like carrier, or the sulfhydryl group and the metal foil, thereby A strong three-dimensional crosslinked structure is formed between the substrate and the copper foil, whereby the peel strength is increased. The above examples are disclosed in Japanese Laid-Open Patent Publication No. 2000-196207.

作為該分子內具有2個以下之巰基的化合物,可列舉:硫 醇、二硫醇、硫羧酸或其鹽、二硫羧酸或其鹽、硫磺酸或其鹽、及二硫磺酸或其鹽,可使用選自這些中的至少1種。 Examples of the compound having two or less mercapto groups in the molecule include sulfur. An alcohol, a dithiol, a sulfuric acid or a salt thereof, a dithiocarboxylic acid or a salt thereof, a sulfuric acid or a salt thereof, and a disulfuric acid or a salt thereof can be used, and at least one selected from the group consisting of these may be used.

硫醇是分子內具有一個巰基的化合物,例如由R-SH表 示。此處,R表示可包含羥基或胺基的脂肪族系或芳香族系烴基或雜環基。 A thiol is a compound having a thiol group in the molecule, for example, by the R-SH Show. Here, R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may contain a hydroxyl group or an amine group.

二硫醇是分子內具有兩個巰基的化合物,例如由R(SH)2 表示。R表示可包含羥基或胺基的脂肪族系或芳香族系烴基或雜環基。另外,兩個巰基可分別鍵結於相同的碳,也可鍵結於互不相同的碳或氮。 A dithiol is a compound having two mercapto groups in the molecule, for example, represented by R(SH) 2 . R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may contain a hydroxyl group or an amine group. In addition, the two sulfhydryl groups may be bonded to the same carbon, respectively, or may be bonded to carbon or nitrogen which are different from each other.

硫羧酸是有機羧酸的羥基被取代為巰基的化合物,例如由R -CO-SH表示。R表示可包含羥基或胺基的脂肪族系或芳香族系烴基或雜環基。另外,硫羧酸也可以鹽的形態使用。此外,也可使用具有兩個硫羧酸基的化合物。 A sulfuric acid is a compound in which a hydroxyl group of an organic carboxylic acid is substituted with a mercapto group, for example, by R. -CO-SH indicates. R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may contain a hydroxyl group or an amine group. Further, the thiocarboxylic acid may be used in the form of a salt. Further, a compound having two thiocarboxylic acid groups can also be used.

二硫羧酸是有機羧酸的羧基中的2個氧原子被取代為硫原 子的化合物,例如由R-(CS)-SH表示。R表示可包含羥基或胺基的脂肪族系或芳香族系烴基或雜環基。另外,二硫羧酸也可以鹽的形態使用。此外,也可使用具有兩個二硫羧酸基的化合物。 Disulfidecarboxylic acid is one in which two oxygen atoms in the carboxyl group of an organic carboxylic acid are substituted into a sulfurogen The compound of the sub, for example, is represented by R-(CS)-SH. R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may contain a hydroxyl group or an amine group. Further, the dithiocarboxylic acid may be used in the form of a salt. Further, a compound having two dithiocarboxylic acid groups can also be used.

硫磺酸是有機磺酸的羥基被取代為巰基的化合物,例如由R(SO2)-SH表示。R表示可包含羥基或胺基的脂肪族系或芳香族系烴基或雜環基。另外,硫磺酸也可以鹽的形態使用。 Sulfuric acid is a compound in which a hydroxyl group of an organic sulfonic acid is substituted with a mercapto group, and is represented, for example, by R(SO 2 )-SH. R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may contain a hydroxyl group or an amine group. Further, sulfuric acid may be used in the form of a salt.

二硫磺酸是有機二磺酸的兩個羥基分別被取代為巰基的化合物,例如由R-((SO2)-SH)2表示。R表示可包含羥基或胺基的脂肪族系或芳香族系烴基或雜環基。另外,兩個硫磺酸基可分別鍵結於相同的碳,也可鍵結於互不相同的碳。另外,二硫磺酸也可以鹽的形態使用。 The disulfuric acid is a compound in which two hydroxyl groups of the organic disulfonic acid are substituted with a mercapto group, respectively, and is represented, for example, by R-((SO 2 )-SH) 2 . R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may contain a hydroxyl group or an amine group. In addition, the two sulfonic acid groups may be bonded to the same carbon, respectively, or may be bonded to carbons different from each other. Further, disulfuric acid can also be used in the form of a salt.

此處,關於作為R合適的脂肪族系烴基,可列舉烷基、環烷基,這些烴基也可包含羥基與胺基中的任一種或者兩者。 Here, examples of the aliphatic hydrocarbon group which is suitable as R include an alkyl group and a cycloalkyl group, and these hydrocarbon groups may contain either or both of a hydroxyl group and an amine group.

另外,作為烷基,沒有限定,可列舉:甲基、乙基、正或異丙基、正、異或三級丁基基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀的碳數1~20、較佳為碳數1~10、更佳為碳數1~5的烷基。 Further, the alkyl group is not limited, and examples thereof include a methyl group, an ethyl group, a normal or an isopropyl group, a normal, an iso or a tertiary butyl group, a normal, an iso- or neopentyl group, a n-hexyl group, an n-octyl group, and a positive group. A linear or branched carbon number of 1 to 20 such as a mercapto group is preferably an alkyl group having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms.

另外,作為環烷基,沒有限定,可列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7的環烷基。 Further, the cycloalkyl group is not limited, and examples thereof include a carbon number of 3 to 10, preferably a carbon number of 5 to 7 such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group or a cyclooctyl group. Cycloalkyl.

另外,關於作為R合適的芳香族烴基,可列舉:苯基、經烷基取代的苯基(例如:甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14的芳基,這些烴基也可包含羥基與胺基中的任一種或 者兩者。 Further, examples of the aromatic hydrocarbon group which is suitable as R include a phenyl group, an alkyl group-substituted phenyl group (for example, a tolyl group, a xylyl group), a 1- or 2-naphthyl group, and a fluorenyl group. 20, preferably 6 to 14 aryl groups, these hydrocarbon groups may also contain any one of a hydroxyl group and an amine group or Both.

另外,關於作為R合適的雜環基,可列舉:咪唑、三氮唑、 四氮唑、苯並咪唑、苯並三氮唑、噻唑、苯並噻唑,也可包含羥基與胺基中的任一種或者兩者。 Further, examples of the heterocyclic group which is suitable as R include imidazole and triazole. Tetrazolium, benzimidazole, benzotriazole, thiazole, benzothiazole may also contain either or both of a hydroxyl group and an amine group.

作為分子內具有2個以下之巰基的化合物的較佳例,可列 舉:3-巰基-1,2丙二醇、2-巰基乙醇、1,2-乙二硫醇、6-巰基-1-己醇、1-辛硫醇、1-十二烷硫醇、10-羥基-1-十二烷硫醇、10-羧基-1-十二烷硫醇、10-胺基-1-十二烷硫醇、1-十二烷硫醇磺酸鈉、苯硫酚、硫代苯甲酸、4-胺基-苯硫酚、對甲苯硫醇、2,4-二甲基苯硫酚、3-巰基-1,2,4三氮唑、2-巰基-苯並噻唑。這些中,就水溶性與廢棄物處理上的觀點而言,較佳為3-巰基-1,2丙二醇。 Preferred examples of the compound having two or less mercapto groups in the molecule can be listed. Take: 3-mercapto-1,2 propanediol, 2-mercaptoethanol, 1,2-ethanedithiol, 6-mercapto-1-hexanol, 1-octylmercaptan, 1-dodecanethiol, 10- Hydroxy-1-dodecanethiol, 10-carboxy-1-dodecanethiol, 10-amino-1-dodecanethiol, sodium 1-dodecanethiolsulfonate, thiophenol, Thiobenzoic acid, 4-amino-thiophenol, p-toluene mercaptan, 2,4-dimethylthiophenol, 3-mercapto-1,2,4 triazole, 2-mercapto-benzothiazole . Among these, from the viewpoint of water solubility and waste treatment, 3-mercapto-1,2-propanediol is preferred.

在脫模層的形成步驟中,分子內具有2個以下之巰基的化合 物可以水溶液的形態使用。為了提高對水的溶解性,還可添加甲醇或乙醇等醇。醇的添加在特別是使用疏水性較高的分子內具有2個以下之巰基的化合物時有效。 In the step of forming the release layer, a compound having two or less sulfhydryl groups in the molecule The substance can be used in the form of an aqueous solution. In order to improve the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of an alcohol is effective especially when a compound having two or less mercapto groups in a molecule having high hydrophobicity is used.

分子內具有2個以下之巰基的化合物的水溶液中的濃度較 高時,有樹脂基材與銅箔的剝離強度降低的傾向,可藉由分子內具有2個以下之巰基的化合物的濃度調整而調整剝離強度。雖然沒有限定,但分子內具有2個以下之巰基的化合物的水溶液中的濃度可設為0.01~10.0重量%,典型而言,可設為0.1~5.0重量%。 The concentration in the aqueous solution of the compound having 2 or less thiol groups in the molecule When the height is high, the peeling strength of the resin substrate and the copper foil tends to decrease, and the peel strength can be adjusted by adjusting the concentration of the compound having two or less sulfhydryl groups in the molecule. Although not limited, the concentration in the aqueous solution of the compound having two or less thiol groups in the molecule may be 0.01 to 10.0% by weight, and typically 0.1 to 5.0% by weight.

分子內具有2個以下之巰基的化合物的水溶液的pH值沒有 特別限制,無論是酸性側還是鹼性側都可應用。例如可以3.0~10.0的範圍 的pH值使用。就無需特別調整pH值的觀點而言,較佳為設為作為中性附近的5.0~9.0的範圍的pH值,更佳為設為7.0~9.0的範圍的pH值。 The pH of the aqueous solution of the compound having 2 or less thiol groups in the molecule is not It is particularly limited, and it can be applied on both the acidic side and the alkaline side. For example, it can range from 3.0 to 10.0. The pH is used. From the viewpoint of not particularly adjusting the pH value, it is preferably a pH value in the range of 5.0 to 9.0 in the vicinity of neutrality, and more preferably a pH value in the range of 7.0 to 9.0.

(3)金屬烷氧化物 (3) Metal alkoxide

也可將具有下式所示的結構的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、或其水解生成物、或該水解生成物的縮合物(以下,簡稱為金屬烷氧化物)單獨使用或組合多種使用而構成脫模層。藉由隔著該脫模層將樹脂基材與銅箔進行貼合,從而密接性適當降低,而可調節剝離強度。 An aluminate compound, a titanate compound, a zirconate compound, or a hydrolyzate thereof, or a condensate of the hydrolyzate (hereinafter, simply referred to as a metal alkoxide) having a structure represented by the following formula may also be used. The release layer is formed by using it alone or in combination of a plurality of uses. By bonding the resin substrate and the copper foil through the release layer, the adhesion is appropriately lowered, and the peel strength can be adjusted.

(R1)m-M-(R2)n (R 1 ) m -M-(R 2 ) n

式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基。再者,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4。 In the formula, R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or any one or more hydrogen atoms are substituted with a halogen atom. The hydrocarbon group, M is any one of Al, Ti, and Zr, n is 0 or 1 or 2, m is an integer of 1 or more and a valence of M or less, and at least one of R 1 is an alkoxy group. Further, m+n is a valence of M, that is, 3 in the case of Al and 4 in the case of Ti and Zr.

該金屬烷氧化物必須具有至少1個烷氧基。在烷氧基不存在而僅由選自由烷基、環烷基及芳基所組成之群中的烴基、或者一個以上之氫原子被取代為鹵素原子的上述任一種烴基構成取代基的情況下,有樹脂基材與銅箔的密接性過於降低的傾向。另外,該金屬烷氧化物必須具有0~2個選自由烷基、環烷基及芳基所組成之群中的烴基、或者一個以上之氫原子被取代為鹵素原子的上述任一種烴基。其原因在於:在具有3個以上 該烴基的情況下,有樹脂基材與銅箔的密接性過於降低的傾向。此外,烷氧基也包括一個以上之氫原子被取代為鹵素原子的烷氧基。在將樹脂基材與銅箔的剝離強度調節為上述範圍中,該金屬烷氧化物較佳為具有兩個以上烷氧基、一個或兩個上述烴基(包含一個以上之氫原子被取代為鹵素原子的烴基)。 The metal alkoxide must have at least one alkoxy group. In the case where the alkoxy group is not present and only the hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or any one of the above-described hydrocarbon groups in which one or more hydrogen atoms is substituted with a halogen atom constitutes a substituent There is a tendency that the adhesion between the resin substrate and the copper foil is too low. Further, the metal alkoxide must have 0 to 2 hydrocarbon groups selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or any one of the above hydrocarbon groups in which one or more hydrogen atoms are substituted with a halogen atom. The reason is: there are more than 3 In the case of the hydrocarbon group, the adhesion between the resin substrate and the copper foil tends to be excessively lowered. Further, the alkoxy group also includes an alkoxy group in which one or more hydrogen atoms are substituted with a halogen atom. In adjusting the peeling strength of the resin substrate and the copper foil to the above range, the metal alkoxide preferably has two or more alkoxy groups, one or two of the above hydrocarbon groups (including one or more hydrogen atoms substituted with a halogen) Hydrocarbon group of an atom).

另外,作為烷基,沒有限定,可列舉:甲基、乙基、正或異 丙基、正、異或三級丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀的碳數1~20、較佳為碳數1~10、更佳為碳數1~5的烷基。 Further, the alkyl group is not limited, and examples thereof include a methyl group, an ethyl group, a positive or a different one. a linear or branched carbon number of 1 to 20, preferably a carbon number, such as a propyl group, a normal or an iso- or a tri-butyl group, a normal or an iso- or neopentyl group, a n-hexyl group, an n-octyl group or a n-decyl group. 1 to 10, more preferably an alkyl group having 1 to 5 carbon atoms.

外,作為環烷基,沒有限定,可列舉:環丙基、環丁基、環 戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7的環烷基。 Further, the cycloalkyl group is not limited, and examples thereof include a cyclopropyl group, a cyclobutyl group, and a ring. The pentyl group, the cyclohexyl group, the cycloheptyl group, and the cyclooctyl group have a carbon number of 3 to 10, preferably a cycloalkyl group having 5 to 7 carbon atoms.

另外,關於作為R2合適的芳香族烴基,可列舉:苯基、經 烷基取代的苯基(例如:甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14的芳基,這些烴基也可包含羥基與胺基中的任一種或兩者。這些烴基也可一個以上之氫原子被取代為鹵素原子,例如可經氟原子、氯原子、或溴原子取代。 Further, examples of the aromatic hydrocarbon group which is suitable as R 2 include a phenyl group, an alkyl group-substituted phenyl group (for example, a tolyl group, a xylyl group), a 1- or 2-naphthyl group, and a fluorenyl group. ~20, preferably 6 to 14 aryl groups, these hydrocarbon groups may also contain either or both of a hydroxyl group and an amine group. These hydrocarbon groups may have one or more hydrogen atoms substituted with a halogen atom, for example, a fluorine atom, a chlorine atom, or a bromine atom.

作為較佳為的鋁酸酯化合物的例,可列舉:三甲氧基鋁、甲 基二甲氧基鋁、乙基二甲氧基鋁、正或異丙基二甲氧基鋁、正、異或三級丁基二甲氧基鋁、正、異或新戊基二甲氧基鋁、己基二甲氧基鋁、辛基二甲氧基鋁、癸基二甲氧基鋁、苯基二甲氧基鋁;烷基取代苯基二甲氧基鋁(例如,對(甲基)苯基二甲氧基鋁)、二甲基甲氧基鋁、三乙氧基鋁、甲基二乙氧基鋁、乙基二乙氧基鋁、正或異丙基二乙氧基鋁、正、異或三級丁基二乙氧基鋁、戊基二乙氧基鋁、己基二乙氧基鋁、辛基二乙氧基鋁、 癸基二乙氧基鋁、苯基二乙氧基鋁、烷基取代苯基二乙氧基鋁(例如,對(甲基)苯基二乙氧基鋁)、二甲基乙氧基鋁、三異丙氧基鋁、甲基二異丙氧基鋁、乙基二異丙氧基鋁、正或異丙基二乙氧基鋁、正、異或三級丁基二異丙氧基鋁、戊基二異丙氧基鋁、己基二異丙氧基鋁、辛基二異丙氧基鋁、癸基二異丙氧基鋁、苯基二異丙氧基鋁、烷基取代苯基二異丙氧基鋁(例如,對(甲基)苯基二異丙氧基鋁)、二甲基異丙氧基鋁、(3,3,3-三氟丙基)二甲氧基鋁、及十三氟辛基二乙氧基鋁、甲基二氯鋁、二甲基氯鋁、二甲基氯鋁、苯基二氯鋁、二甲基氟鋁、二甲基溴鋁、二苯基溴鋁、該等水解生成物、及該等水解生成物的縮合物等。這些中,就獲取的容易性的觀點而言,較佳為三甲氧基鋁、三乙氧基鋁、三異丙氧基鋁。 As an example of a preferred aluminate compound, trimethoxy aluminum and A are mentioned. Alkali dimethoxy aluminum, ethyl dimethoxy aluminum, n- or isopropyl dimethoxy aluminum, n-, iso- or tert-butyl butyl dimethoxy aluminum, n-, iso- or neopentyl dimethoxy Aluminium, hexyldimethoxyaluminum, octyldimethoxyaluminum, decyldimethoxyaluminum, phenyldimethoxyaluminum; alkyl-substituted phenyldimethoxyaluminum (for example, pair (A Phenyldimethoxyaluminum), dimethylmethoxyaluminum, triethoxyaluminum, methyldiethoxyaluminum,ethyldiethoxyaluminum, n- or isopropyldiethoxy Aluminum, n-, iso- or tert-butyl butyl diethoxy aluminum, pentyl diethoxy aluminum, hexyl diethoxy aluminum, octyl diethoxy aluminum, Mercapto-diethoxyaluminum, phenyldiethoxyaluminum, alkyl-substituted phenyldiethoxyaluminum (for example, p-(methyl)phenyldiethoxyaluminum), dimethylethoxyaluminum , aluminum triisopropoxide, aluminum aluminum diisopropoxide, aluminum aluminum diisopropoxide, normal or isopropyl diethoxy aluminum, n-, iso- or tert-butyl diisopropoxy Aluminum, pentyl aluminum diisopropoxide, aluminum hexyl diisopropoxide, aluminum octyl diisopropoxide, aluminum decyl diisopropoxide, aluminum phenyl diisopropoxide, alkyl substituted benzene Aluminium diisopropoxide (for example, p-(methyl)phenyl diisopropoxy aluminum), dimethyl isopropoxide aluminum, (3,3,3-trifluoropropyl)dimethoxy Aluminum, and tridecafluorooctyldiethoxyaluminum, methyldichloroaluminum, dimethylchloroaluminum, dimethylchloroaluminum, phenyldichloroaluminum, dimethylfluoroaluminum, dimethylbromoaluminum, Diphenyl bromide, a hydrolyzate, and a condensate of the hydrolyzate. Among these, from the viewpoint of easiness of acquisition, trimethoxy aluminum, triethoxy aluminum, and aluminum triisopropoxide are preferred.

作為較佳的鈦酸酯化合物的例,可列舉:四甲氧基鈦、甲基 三甲氧基鈦、乙基三甲氧基鈦、正或異丙基三甲氧基鈦、正、異或三級丁基三甲氧基鈦、正、異或新戊基三甲氧基鈦、己基三甲氧基鈦、辛基三甲氧基鈦、癸基三甲氧基鈦、苯基三甲氧基鈦;烷基取代苯基三甲氧基鈦(例如,對(甲基)苯基三甲氧基鈦)、二甲基二甲氧基鈦、四乙氧基鈦、甲基三乙氧基鈦、乙基三乙氧基鈦、正或異丙基三乙氧基鈦、正、異或三級丁基三乙氧基鈦、戊基三乙氧基鈦、己基三乙氧基鈦、辛基三乙氧基鈦、癸基三乙氧基鈦、苯基三乙氧基鈦、烷基取代苯基三乙氧基鈦(例如,對(甲基)苯基三乙氧基鈦)、二甲基二乙氧基鈦、四異丙氧基鈦、甲基三異丙氧基鈦、乙基三異丙氧基鈦、正或異丙基三乙氧基鈦、正、異或三級丁基三異丙氧基鈦、戊基三異丙氧基鈦、己基三異丙氧基鈦、辛基三異丙氧基鈦、癸基三異丙氧基鈦、苯基三異丙氧基鈦、烷基取代苯基三異丙氧基鈦(例 如,對(甲基)苯基三異丙氧基鈦)、二甲基二異丙氧基鈦、(3,3,3-三氟丙基)三甲氧基鈦、及十三氟辛基三乙氧基鈦、甲基三氯鈦、二甲基二氯鈦、三甲基氯鈦、苯基三氯鈦、二甲基二氟鈦、二甲基二溴鈦、二苯基二溴鈦、該等水解生成物、及該等水解生成物的縮合物等。這些中,就獲取的容易性的觀點而言,較佳為四甲氧基鈦、四乙氧基鈦、四異丙氧基鈦。 As an example of a preferable titanate compound, titanium tetramethoxide and methyl group are mentioned. Trimethoxytitanium, ethyltrimethoxytitanium, n- or isopropyltrimethoxytitanium, n-, iso- or tri-tert-butyltrimethoxytitanium, n-, iso- or neopentyltrimethoxytitanium, hexyltrimethoxy Titanium, octyltrimethoxytitanium, decyltrimethoxytitanium, phenyltrimethoxytitanium; alkyl-substituted phenyltrimethoxytitanium (for example, p-(methyl)phenyltrimethoxytitanium), Methyl dimethoxytitanium, tetraethoxytitanium, methyltriethoxytitanium, ethyltriethoxytitanium, n- or isopropyltriethoxytitanium, n-, iso- or tert-butyl butyl Ethoxy titanium, pentyl triethoxy titanium, hexyl triethoxy titanium, octyl triethoxy titanium, decyl triethoxy titanium, phenyl triethoxy titanium, alkyl substituted phenyl three Titanium ethoxide (for example, p-(meth)phenyltriethoxytitanium), dimethyldiethoxytitanium, tetraisopropoxytitanium, methyltriisopropoxytitanium, ethyltriiso Titanium propoxide, titanium or n-propyltriethoxytitanium, n-, iso- or tert-butyl butyl triisopropoxide, titanium pentyl triisopropoxide, titanium hexyl triisopropoxide, octyl Titanium triisopropoxide, titanium decyl triisopropoxide, phenyl triiso Titanium group, an alkyl-substituted phenyl titanium triisopropoxide (Example For example, p-(methyl)phenyltriisopropoxytitanium), dimethyldiisopropoxytitanium, (3,3,3-trifluoropropyl)trimethoxytitanium, and tridecafluorooctyl Triethoxytitanium, methyltrichlorotitanium, dimethyldichlorotitanium, trimethylchlorotitanium, phenyltrichlorotitanium, dimethyldifluorotitanium, dimethyldibromotitanium, diphenyldibromo Titanium, the hydrolyzed product, and a condensate of the hydrolyzed product. Among these, from the viewpoint of easiness of acquisition, titanium tetramethoxide, titanium tetraethoxide, and titanium tetraisopropoxide are preferable.

作為較佳為鋯酸酯化合物的例,可列舉:四甲氧基鋯、甲基 三甲氧基鋯、乙基三甲氧基鋯、正或異丙基三甲氧基鋯、正、異或三級丁基三甲氧基鋯、正、異或新戊基三甲氧基鋯、己基三甲氧基鋯、辛基三甲氧基鋯、癸基三甲氧基鋯、苯基三甲氧基鋯;烷基取代苯基三甲氧基鋯(例如,對(甲基)苯基三甲氧基鋯)、二甲基二甲氧基鋯、四乙氧基鋯、甲基三乙氧基鋯、乙基三乙氧基鋯、正或異丙基三乙氧基鋯、正、異或三級丁基三乙氧基鋯、戊基三乙氧基鋯、己基三乙氧基鋯、辛基三乙氧基鋯、癸基三乙氧基鋯、苯基三乙氧基鋯、烷基取代苯基三乙氧基鋯(例如,對(甲基)苯基三乙氧基鋯)、二甲基二乙氧基鋯、四異丙氧基鋯、甲基三異丙氧基鋯、乙基三異丙氧基鋯、正或異丙基三乙氧基鋯、正、異或三級丁基三異丙氧基鋯、戊基三異丙氧基鋯、己基三異丙氧基鋯、辛基三異丙氧基鋯、癸基三異丙氧基鋯、苯基三異丙氧基鋯、烷基取代苯基三異丙氧基鋯(例如,對(甲基)苯基三異丙氧基鈦)、二甲基二異丙氧基鋯、(3,3,3-三氟丙基)三甲氧基鋯、及十三氟辛基三乙氧基鋯、甲基三氯鋯、二甲基二氯鋯、三甲基氯鋯、苯基三氯鋯、二甲基二氟鋯、二甲基二溴鋯、二苯基二溴鋯、該等水解生成物、及該等水解生成物的縮合物等。這些中,就獲取的容易性的觀點而言,較佳為四甲氧基鋯、四乙氧基鋯、四異丙氧基鋯。 As an example of a preferable zirconate compound, tetramethoxy zirconium and a methyl group are mentioned. Trimethoxy zirconium, ethyltrimethoxy zirconium, n- or isopropyltrimethoxy zirconium, n-, iso- or tri-butyl butyl trimethoxy zirconium, n-, iso- or neopentyl trimethoxy zirconium, hexyl trimethoxy Zirconium, octyltrimethoxyzirconium, decyltrimethoxyzirconium, phenyltrimethoxyzirconium; alkyl substituted phenyltrimethoxyzirconium (for example, p-(methyl)phenyltrimethoxyzirconium), Methyldimethoxyzirconium, tetraethoxyzirconium, methyltriethoxyzirconium, ethyltriethoxyzirconium, n- or isopropyltriethoxyzirconium, n-, iso- or tert-butyl butyl Zirconium ethoxide, zirconium pentyl triethoxy zirconium, zirconium triethoxy zirconium, octyl triethoxy zirconium, decyl triethoxy zirconium, phenyl triethoxy zirconium, alkyl substituted phenyl tri Zirconium ethoxide (for example, p-(methyl)phenyltriethoxy zirconium), dimethyldiethoxyzirconium, tetraisopropoxyzirconium, methyltriisopropoxyzirconium, ethyltriiso Zirconium propoxide, zirconium n- or isopropyltriethoxylate, zirconium, n- or tri-butyl butyl triisopropoxide, zirconium pentyl triisopropoxide, zirconium hexyl triisopropoxide, octyl Zirconium triisopropoxide, zirconium decyl triisopropoxide, phenyl triiso Zirconyloxy, alkyl substituted phenyl triisopropoxy zirconium (for example, p-(methyl)phenyl triisopropoxytitanium), zirconium dimethyl diisopropoxide, (3,3,3- Trifluoropropyl)trimethoxyzirconium, and trifluorooctyltriethoxyzirconium, methyltrichlorozirconium, dimethyldichlorozirconium, trimethylchlorozirconium, phenyltrichlorozirconium, dimethyl Difluorozirconium, zirconium dimethyldibromide, zirconium diphenyldibromide, a hydrolyzate, and a condensate of the hydrolyzate. Among these, from the viewpoint of easiness of acquisition, tetramethoxy zirconium, tetraethoxy zirconium, and tetraisopropoxy zirconium are preferable.

在脫模層的形成步驟中,金屬烷氧化物可以水溶液的形態使 用。為了提高對水的溶解性,還可添加甲醇或乙醇等醇。醇的添加在特別是使用疏水性較高的金屬烷氧化物時有效。 In the step of forming the release layer, the metal alkoxide may be in the form of an aqueous solution. use. In order to improve the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of an alcohol is effective especially when a highly hydrophobic metal alkoxide is used.

金屬烷氧化物的水溶液中的濃度較高時,有樹脂基材與銅箔 的剝離強度降低的傾向,可藉由金屬烷氧化物的濃度調整而調整剝離強度。雖然沒有限定,但金屬烷氧化物的水溶液中的濃度可設為0.001~1.0mol/L,典型而言,可設為0.005~0.2mol/L。 When the concentration of the metal alkoxide in the aqueous solution is high, there is a resin substrate and a copper foil The tendency of the peel strength to decrease is adjusted by adjusting the concentration of the metal alkoxide. Although not limited, the concentration in the aqueous solution of the metal alkoxide may be 0.001 to 1.0 mol/L, and typically 0.005 to 0.2 mol/L.

金屬烷氧化物的水溶液的pH值沒有特別限制,無論是酸性 側還是鹼性側都可應用。例如可以3.0~10.0的範圍的pH值使用。就無需特別調整pH值的觀點而言,較佳為設為作為中性附近的5.0~9.0的範圍的pH值,更佳為設為7.0~9.0的範圍的pH值。 The pH of the aqueous solution of the metal alkoxide is not particularly limited, and is acidic. The side or the alkaline side can be applied. For example, it can be used at a pH in the range of 3.0 to 10.0. From the viewpoint of not particularly adjusting the pH value, it is preferably a pH value in the range of 5.0 to 9.0 in the vicinity of neutrality, and more preferably a pH value in the range of 7.0 to 9.0.

關於本發明的表面處理銅箔,還可在銅箔與脫模層之間設置 選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的1種以上的層。此處所謂鉻酸鹽處理層,是指經包含鉻酸酐、鉻酸、重鉻酸、鉻酸鹽或重鉻酸鹽的液處理過的層。鉻酸鹽處理層還可包含鈷、鐵、鎳、鉬、鋅、鉭、銅、鋁、磷、鎢、錫、砷及鈦等元素(也可為金屬、合金、氧化物、氮化物、硫化物等任意形態)。作為鉻酸鹽處理層的具體例,可列舉:經鉻酸酐或重鉻酸鉀水溶液處理的鉻酸鹽處理層、或經包含鉻酸酐或重鉻酸鉀及鋅的處理液處理的鉻酸鹽處理層等。 The surface-treated copper foil of the present invention can also be disposed between the copper foil and the release layer. One or more layers selected from the group consisting of a heat resistant layer, a rust preventive layer, a chromate treatment layer, and a decane coupling treatment layer are selected. The chromate treatment layer herein refers to a layer treated with a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate or dichromate. The chromate treatment layer may also contain elements such as cobalt, iron, nickel, molybdenum, zinc, bismuth, copper, aluminum, phosphorus, tungsten, tin, arsenic, and titanium (also may be metals, alloys, oxides, nitrides, sulfides). Any form of matter). Specific examples of the chromate-treated layer include a chromate-treated layer treated with an aqueous solution of chromic anhydride or potassium dichromate, or a chromate treated with a treatment liquid containing chromic anhydride or potassium dichromate and zinc. Processing layers, etc.

另外,作為耐熱層、防銹層,可使用公知的耐熱層、防銹層。 例如耐熱層及/或防銹層可為包含選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭的群中的1種以上的元 素的層,也可為由選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭的群中的1種以上的元素所組成的金屬層或合金層。另外,耐熱層及/或防銹層也可包含含有選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭的群中的1種以上的元素的氧化物、氮化物、矽化物。另外,耐熱層及/或防銹層也可為包含鎳-鋅合金的層。另外,耐熱層及/或防銹層也可為鎳-鋅合金層。上述鎳-鋅合金層除去不可避免的雜質,還可含有50wt%~99wt%的鎳、50wt%~1wt%的鋅。上述鎳-鋅合金層的鋅及鎳的合計附著量可為5~1000mg/m2、較佳為10~500mg/m2、較佳為20~100mg/m2。另外,上述包含鎳-鋅合金的層或上述鎳-鋅合金層的鎳的附著量與鋅的附著量的比(=鎳的附著量/鋅的附著量)較佳為1.5~10。另外,上述包含鎳-鋅合金的層或上述鎳-鋅合金層的鎳的附著量較佳為0.5mg/m2~500mg/m2,更佳為1mg/m2~50mg/m2Further, as the heat-resistant layer and the rust-preventive layer, a known heat-resistant layer or rust-preventing layer can be used. For example, the heat resistant layer and/or the rustproof layer may be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron, The layer of one or more elements in the group of cerium may also be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum. A metal layer or an alloy layer composed of one or more elements of a group of elements, iron, and lanthanum. In addition, the heat-resistant layer and/or the rust-preventing layer may also contain a component selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum. Oxides, nitrides, and tellurides of one or more elements in the group of iron and antimony. Further, the heat-resistant layer and/or the rust-preventive layer may be a layer containing a nickel-zinc alloy. Further, the heat resistant layer and/or the rustproof layer may be a nickel-zinc alloy layer. The nickel-zinc alloy layer may contain 50% by weight to 99% by weight of nickel and 50% by weight to 1% by weight of zinc, in addition to unavoidable impurities. The total adhesion amount of zinc and nickel in the nickel-zinc alloy layer may be 5 to 1000 mg/m 2 , preferably 10 to 500 mg/m 2 , preferably 20 to 100 mg/m 2 . Further, the ratio of the adhesion amount of nickel to the nickel-zinc alloy layer or the nickel-zinc alloy layer to the amount of adhesion of zinc (=the amount of adhesion of nickel/the amount of adhesion of zinc) is preferably 1.5 to 10. Further, the amount of nickel contained in the layer containing the nickel-zinc alloy or the nickel-zinc alloy layer is preferably 0.5 mg/m 2 to 500 mg/m 2 , more preferably 1 mg/m 2 to 50 mg/m 2 .

例如耐熱層及/或防銹層也可為依序積層有附著量為1mg /m2~100mg/m2、較佳為5mg/m2~50mg/m2的鎳或鎳合金層、與附著量為1mg/m2~80mg/m2、較佳為5mg/m2~40mg/m2的錫層的耐熱層及/或防銹層,上述鎳合金層也可由鎳-鉬、鎳-鋅、鎳-鉬-鈷中的任一種構成。另外,關於耐熱層及/或防銹層,鎳或鎳合金與錫的合計附著量較佳為2mg/m2~150mg/m2,更佳為10mg/m2~70mg/m2。另外,耐熱層及/或防銹層較佳為[鎳或鎳合金中的鎳附著量]/[錫附著量]=0.25~10,更佳為0.33~3。 For example, the heat-resistant layer and/or the rust-preventing layer may be a nickel or nickel alloy layer having a deposition amount of 1 mg / m 2 to 100 mg / m 2 , preferably 5 mg / m 2 to 50 mg / m 2 , and attached thereto. The heat resistant layer and/or the rustproof layer of the tin layer of 1 mg/m 2 to 80 mg/m 2 , preferably 5 mg/m 2 to 40 mg/m 2 , the nickel alloy layer may also be nickel-molybdenum or nickel-zinc Any of nickel-molybdenum-cobalt. Further, the heat-resistant layer and/or the rust-preventive layer preferably have a total adhesion amount of nickel or a nickel alloy to tin of 2 mg/m 2 to 150 mg/m 2 , more preferably 10 mg/m 2 to 70 mg/m 2 . Further, the heat-resistant layer and/or the rust-preventive layer are preferably [the amount of nickel deposited in the nickel or nickel alloy] / [the amount of tin adhesion] = 0.25 to 10, more preferably 0.33 to 3.

此外,矽烷偶合處理所使用的矽烷偶合劑可使用公知的矽烷 偶合劑,例如可使用胺基系矽烷偶合劑或環氧系矽烷偶合劑、巰基系矽烷偶合劑。另外,矽烷偶合劑也可使用乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、4-環氧丙基丁基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、咪唑矽烷、三嗪矽烷、γ-巰基丙基三甲氧基矽烷等。 Further, a known decane coupling agent can be used as the decane coupling agent used in the decane coupling treatment, and for example, an amine decane coupling agent, an epoxy decane coupling agent, or a decyl decane coupling agent can be used. Further, the decane coupling agent may also be a vinyl trimethoxy decane, a vinyl phenyl trimethoxy decane, a γ-methyl propylene methoxy propyl trimethoxy decane, or a γ-glycidoxy propyl trimethoxy group. Baseline, 4-epoxypropylbutyltrimethoxydecane, γ-aminopropyltriethoxydecane, N- β- (aminoethyl)-γ-aminopropyltrimethoxydecane, N-3-(4-(3-Aminopropyloxy)butoxy)propyl-3-aminopropyltrimethoxydecane, imidazolium, triazine decane, γ-mercaptopropyltrimethoxydecane Wait.

上述矽烷偶合處理層也可使用環氧系矽烷、胺基系矽烷、甲 基丙烯醯氧基系矽烷、巰基系矽烷等矽烷偶合劑等而形成。此外,此種矽烷偶合劑也可混合2種以上而使用。其中,較佳為使用胺基系矽烷偶合劑或環氧系矽烷偶合劑所形成的矽烷偶合處理層。 The above decane coupling treatment layer may also be an epoxy decane, an amine decane, or a It is formed by a decane coupling agent such as a propylene oxy oxane or a decyl decane. Further, such a decane coupling agent may be used in combination of two or more kinds. Among them, a decane coupling treatment layer formed using an amino decane coupling agent or an epoxy decane coupling agent is preferred.

此處所謂胺基系矽烷偶合劑,也可為選自由N-(2-胺基 乙基)-3-胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、胺基丙基三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、N-(3-丙烯醯氧基-2-羥基丙基)-3-胺基丙基三乙氧基矽烷、4-胺基丁基三乙氧基矽烷、(胺基乙基胺基甲基)苯乙基三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三(2-乙基己氧基)矽烷、6-(胺基己基胺基丙基)三甲氧基矽烷、胺基苯基三甲氧基矽烷、3-(1-胺基丙氧基)-3,3-二甲基-1-丙烯基三甲氧基矽烷、3-胺基丙基三(甲氧基乙氧基乙氧基)矽烷、3-胺基丙基三乙氧基矽烷、 3-胺基丙基三甲氧基矽烷、ω-胺基十一烷基三甲氧基矽烷、3-(2-N-苄基胺基乙基胺基丙基)三甲氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、(N,N-二乙基-3-胺基丙基)三甲氧基矽烷、(N,N-二甲基-3-胺基丙基)三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷所組成之群中的胺基系矽烷偶合劑。 The amino-based decane coupling agent herein may also be selected from N-(2-amino group). Ethyl)-3-aminopropyltrimethoxydecane, 3-(N-styrylmethyl-2-aminoethylamino)propyltrimethoxydecane, 3-aminopropyltriethyl Oxydecane, bis(2-hydroxyethyl)-3-aminopropyltriethoxydecane, aminopropyltrimethoxydecane, N-methylaminopropyltrimethoxydecane, N-benzene Aminopropyltrimethoxydecane, N-(3-propenyloxy-2-hydroxypropyl)-3-aminopropyltriethoxydecane, 4-aminobutyltriethoxydecane , (Aminoethylaminomethyl) phenethyltrimethoxydecane, N-(2-aminoethyl-3-aminopropyl)trimethoxynonane, N-(2-aminoethyl) 3-aminopropyl)tris(2-ethylhexyloxy)decane, 6-(aminohexylaminopropyl)trimethoxynonane, aminophenyltrimethoxydecane, 3-(1- Aminopropyloxy)-3,3-dimethyl-1-propenyltrimethoxydecane, 3-aminopropyltris(methoxyethoxyethoxy)decane, 3-aminopropyl Triethoxy decane, 3-aminopropyltrimethoxydecane, ω-aminoundecyltrimethoxydecane, 3-(2-N-benzylaminoethylaminopropyl)trimethoxynonane, double (2 -hydroxyethyl)-3-aminopropyltriethoxydecane, (N,N-diethyl-3-aminopropyl)trimethoxydecane, (N,N-dimethyl-3- Aminopropyl)trimethoxydecane, N-methylaminopropyltrimethoxydecane, N-phenylaminopropyltrimethoxydecane, 3-(N-styrylmethyl-2-amine Ethylethylamino)propyltrimethoxydecane, γ-aminopropyltriethoxydecane, N-β-(aminoethyl)-γ-aminopropyltrimethoxydecane, N-3 An amine-based decane coupling agent in the group consisting of -(4-(3-aminopropoxy)butoxy)propyl-3-aminopropyltrimethoxydecane.

矽烷偶合處理層較理想為以矽原子換算計,在0.05mg/m2 ~200mg/m2、較佳為0.15mg/m2~20mg/m2、較佳為0.3mg/m2~2.0mg/m2的範圍內進行設置。在為上述範圍的情況下,可使樹脂基材與銅箔的密接性更為提高。 The decane coupling treatment layer is preferably 0.05 mg/m 2 to 200 mg/m 2 , preferably 0.15 mg/m 2 to 20 mg/m 2 , preferably 0.3 mg/m 2 to 2.0 mg in terms of ruthenium atom. Set within the range of /m 2 . In the case of the above range, the adhesion between the resin substrate and the copper foil can be further improved.

另外,可對銅層、粗化粒子層、耐熱層、防銹層、矽烷偶合 處理層或鉻酸鹽處理層的表面進行國際公開編號WO2008/053878、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、國際公開編號WO2006/134868、日本專利第5046927號、國際公開編號WO2007/105635、日本專利第5180815號、日本特開2013-19056號所記載的表面處理。 In addition, the copper layer, the roughened particle layer, the heat resistant layer, the rustproof layer, and the decane coupling The surface of the treatment layer or the chromate treatment layer is disclosed in International Publication No. WO2008/053878, Japanese Patent Laid-Open No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, International Publication No. WO2006/ The surface treatment described in Japanese Patent No. 5046927, International Publication No. WO2007/105635, Japanese Patent No. 5180815, and Japanese Patent Laid-Open No. 2013-19056.

也可在本發明的表面處理銅箔的表面設置樹脂層。樹脂層通常可設置在脫模層上。 A resin layer may also be provided on the surface of the surface-treated copper foil of the present invention. The resin layer can usually be disposed on the release layer.

上述樹脂層可為接合用樹脂,即接合劑,也可為底漆,也可為接合用的半硬化狀態(B階段狀態)的絕緣樹脂層。所謂半硬化狀態(B 階段狀態)包含如下狀態:即便用手指接觸其表面也無粘著感,而可重疊該絕緣樹脂層進行保管,進而如果受到加熱處理,則產生硬化反應。 The resin layer may be a bonding resin, that is, a bonding agent, a primer, or an insulating resin layer in a semi-hardened state (B-stage state) for bonding. Semi-hardened state (B The stage state includes a state in which there is no stickiness even when the surface is touched by a finger, and the insulating resin layer can be stacked for storage, and if subjected to heat treatment, a hardening reaction occurs.

另外,上述樹脂層可含有熱硬化性樹脂,也可為熱塑性樹 脂。另外,上述樹脂層也可含有熱塑性樹脂。上述樹脂層可含有公知的樹脂、樹脂硬化劑、化合物、硬化促進劑、介電質、反應觸媒、交聯劑、聚合物、預浸體、骨架材等。另外,上述樹脂層例如也可使用國際公開編號WO2008/004399、國際公開編號WO2008/053878、國際公開編號WO2009/084533、日本特開平11-5828號、日本特開平11-140281號、日本專利第3184485號、國際公開編號WO97/02728、日本專利第3676375號、日本特開2000-43188號、日本專利第3612594號、日本特開2002-179772號、日本特開2002-359444號、日本特開2003-304068號、日本專利第3992225號、日本特開2003-249739號、日本專利第4136509號、日本特開2004-82687號、日本專利第4025177號、日本特開2004-349654號、日本專利第4286060號、日本特開2005-262506號、日本專利第4570070號、日本專利特開2005-53218號、日本專利第3949676號、日本專利第4178415號、國際公開編號WO2004/005588、日本特開2006-257153號、日本特開2007-326923號、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、日本特開2009-67029號、國際公開編號WO2006/134868、日本專利第5046927號、日本特開2009-173017號、國際公開編號WO2007/105635、日本專利第5180815號、國際公開編號WO2008/114858、國際公開編號WO2009/008471、日本特開2011-14727號、國際公開編號WO2009/001850、國際公開編號WO2009 /145179、國際公開編號WO2011/068157、日本特開2013-19056號所記載的物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電質、反應觸媒、交聯劑、聚合物、預浸體、骨架材等)及/或樹脂層的形成方法、形成裝置而形成。 Further, the above resin layer may contain a thermosetting resin or a thermoplastic tree. fat. Further, the above resin layer may contain a thermoplastic resin. The resin layer may contain a known resin, a resin curing agent, a compound, a curing accelerator, a dielectric, a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton, and the like. In addition, as the above-mentioned resin layer, for example, International Publication No. WO2008/004399, International Publication No. WO2008/053878, International Publication No. WO2009/084533, Japanese Patent Laid-Open No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei. No., International Publication No. WO97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open No. 2002-359444, Japanese Patent Laid-Open No. 2003- No. 304068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003-249739, Japanese Patent No. 4136509, Japanese Patent Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Laid-Open No. 2004-349654, and Japanese Patent No. 4286060 Japanese Patent Laid-Open No. 2005-262506, Japanese Patent No. 4570070, Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004/005588, Japanese Patent Publication No. 2006-257153 Japanese Patent Laid-Open No. 2007-326923, Japanese Patent Laid-Open No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, and Japanese Patent Laid-Open No. 2009-67029, International Publication No. WO2006/134868, Japanese Patent No. 5046927, Japanese Patent Laid-Open No. 2009-173017, International Publication No. WO2007/105635, Japanese Patent No. 5180815, International Publication No. WO2008/114858, International Publication No. WO2009 /008471, Japan Special Open 2011-14727, International Public Number WO2009/001850, International Public Number WO2009 /145179, International Publication No. WO2011/068157, Japanese Patent Laid-Open Publication No. 2013-19056 (resin, resin curing agent, compound, hardening accelerator, dielectric, reaction catalyst, crosslinking agent, polymer, pre- It is formed by a method of forming a blister, a skeleton, or the like and/or a resin layer, and a forming apparatus.

可在本發明的表面處理銅箔的脫模層側設置樹脂基材而製 作覆銅積層板。該覆銅積層板也可由紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布‧紙複合基材環氧樹脂、玻璃布‧玻璃無紡布複合基材環氧樹脂及玻璃布基材環氧樹脂等形成樹脂基材。樹脂基材可為預浸體,也可含有熱硬化性樹脂。另外,可藉由在該覆銅積層板的表面處理銅箔形成電路而製作印刷配線板。進而,可藉由在印刷配線板搭載電子零件類而製作印刷電路板。在本發明中,「印刷配線板」也包括如上述般搭載有電子零件類的印刷配線板及印刷電路板及印刷基板。另外,可使用上述印刷配線板而製作電子機器,也可使用上述搭載有電子零件類的印刷電路板而製作電子機器,也可使用上述搭載有電子零件類的印刷基板而製作電子機器。另外,上述「印刷電路板」也包括半導體封裝用電路形成基板。進而可在半導體封裝用電路形成基板搭載電子零件類而製作半導體封裝。進而也可使用上述半導體封裝而製作電子機器。 A resin substrate can be provided on the release layer side of the surface-treated copper foil of the present invention. Used as a copper clad laminate. The copper clad laminate can also be a paper substrate phenol resin, a paper substrate epoxy resin, a synthetic fiber cloth substrate epoxy resin, a glass cloth ‧ paper composite substrate epoxy resin, a glass cloth ‧ glass non-woven composite substrate The epoxy resin and the glass cloth substrate epoxy resin form a resin substrate. The resin substrate may be a prepreg or a thermosetting resin. Further, a printed wiring board can be produced by forming a circuit by processing a copper foil on the surface of the copper clad laminate. Further, a printed circuit board can be produced by mounting electronic components on a printed wiring board. In the present invention, the "printed wiring board" also includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components are mounted as described above. In addition, an electronic device can be produced by using the printed wiring board described above, and an electronic device can be produced by using the printed circuit board on which the electronic component is mounted, or an electronic device can be manufactured by using the printed circuit board on which the electronic component is mounted. Further, the above-mentioned "printed circuit board" also includes a circuit-formed substrate for semiconductor packaging. Further, an electronic component can be mounted on a circuit-formed substrate for semiconductor packaging to fabricate a semiconductor package. Further, an electronic device can be produced by using the above semiconductor package.

可使用本發明的銅箔,利用半加成法而形成微細電路。圖1 表示使用銅箔的輪廓的半加成法的概略例。在該半加成法中使用有銅箔的表面輪廓。具體而言,首先,使本發明的表面處理銅箔自脫模層側積層於樹脂基材而製作銅箔積層體。繼而,將銅箔積層體的銅箔(表面處理銅箔)在不進行蝕刻的情況下進行剝離。繼而,利用稀硫酸等對轉印有銅箔表面 輪廓的樹脂基材的表面進行清洗後,實施無電解鍍銅。然後,利用乾膜等被覆樹脂基材的不形成電路的部分,對未被乾膜覆蓋的無電解鍍銅層的表面實施電(電解)鍍銅。其後,將乾膜去除後,將形成在不形成電路的部分的無電解鍍銅層去除,由此形成微細電路。本發明中所形成的微細電路與轉印有本發明的銅箔表面輪廓的樹脂基材的剝離面密接,因此其密接力(剝離強度)變良好。 The copper foil of the present invention can be used to form a fine circuit by a semi-additive method. figure 1 A schematic example of a semi-additive method using a profile of a copper foil. A surface profile of the copper foil is used in the semi-additive process. Specifically, first, the surface-treated copper foil of the present invention is laminated on the resin substrate from the release layer side to prepare a copper foil laminate. Then, the copper foil (surface-treated copper foil) of the copper foil laminate was peeled off without etching. Then, the surface of the copper foil is transferred by using dilute sulfuric acid or the like. After the surface of the contoured resin substrate is cleaned, electroless copper plating is performed. Then, the surface of the resin substrate which is not formed with a circuit such as a dry film is coated with electric (electrolytic) copper plating on the surface of the electroless copper plating layer which is not covered with the dry film. Thereafter, after the dry film is removed, the electroless copper plating layer formed in the portion where the circuit is not formed is removed, thereby forming a fine circuit. Since the fine circuit formed in the present invention is in close contact with the peeling surface of the resin substrate on which the surface profile of the copper foil of the present invention is transferred, the adhesion (peeling strength) is improved.

另外,半加成法的另一個實施形態如下所述。 Further, another embodiment of the semi-additive method is as follows.

所謂半加成法是指在樹脂基材或銅箔上進行較薄的無電解鍍敷,形成圖案後,使用電鍍及蝕刻而形成導體圖案的方法。因此,在使用半加成法的本發明的印刷配線板之製造方法的一個實施形態中,包括如下步驟:準備本發明的表面處理銅箔與樹脂基材的步驟;在上述表面處理銅箔自脫模層側積層樹脂基材的步驟;將上述表面處理銅箔與樹脂基材積層後,將上述表面處理銅箔剝離的步驟;在將上述表面處理銅箔剝離而產生的樹脂基材的剝離面設置通孔或/及盲孔的步驟;針對包含上述通孔或/及盲孔的區域進行除膠渣處理的步驟;針對上述樹脂基材及包含上述通孔或/及盲孔的區域,利用稀硫酸等對樹脂基材表面進行清洗並設置無電解鍍層(例如無電解鍍銅層)的步驟;在上述無電解鍍層上設置抗鍍敷劑的步驟;對上述抗鍍敷劑進行曝光,其後將供形成電路的區域的抗鍍敷劑去除的步驟; 在去除了上述抗鍍敷劑的形成有上述電路的區域設置電解鍍層(例如電解鍍銅層)的步驟;將上述抗鍍敷劑去除的步驟;及及藉由快速蝕刻等,將存在於上述供形成電路的區域以外的區域的無電解鍍層去除的步驟。 The semi-additive method is a method in which a thin electroless plating is performed on a resin substrate or a copper foil, and a pattern is formed, and a conductor pattern is formed by plating and etching. Therefore, in one embodiment of the method for producing a printed wiring board of the present invention using the semi-additive method, the method comprising the steps of: preparing the surface-treated copper foil of the present invention and a resin substrate; and treating the copper foil from the surface a step of laminating the resin substrate on the release layer side; a step of peeling off the surface-treated copper foil after laminating the surface-treated copper foil and the resin substrate; and peeling off the resin substrate by peeling off the surface-treated copper foil a step of providing a through hole or/and a blind hole; performing a desmear treatment step on the region including the through hole or/and the blind hole; and the resin substrate and the region including the through hole or/and the blind hole, a step of cleaning the surface of the resin substrate with dilute sulfuric acid or the like and providing an electroless plating layer (for example, an electroless copper plating layer); and providing a plating resist on the electroless plating layer; and exposing the anti-plating agent, a step of removing the plating resist for the region in which the circuit is formed; a step of providing an electrolytic plating layer (for example, an electrolytic copper plating layer) in a region where the above-mentioned circuit is formed by removing the plating resist; a step of removing the plating resist; and a rapid etching or the like A step of removing electroless plating from a region other than the region in which the circuit is formed.

在使用半加成法的本發明的印刷配線板之製造方法的另一個實施形態中,包括如下步驟:準備本發明的表面處理銅箔與樹脂基材的步驟;在上述表面處理銅箔自脫模層側積層樹脂基材的步驟;將上述表面處理銅箔與樹脂基材積層後,將上述表面處理銅箔剝離的步驟;針對將上述表面處理銅箔剝離而產生的樹脂基材的剝離面,利用稀硫酸等對樹脂基材表面進行清洗並設置無電解鍍層(例如無電解鍍銅層)的步驟;在上述無電解鍍層上設置抗鍍敷劑的步驟;對上述抗鍍敷劑進行曝光,其後將供形成電路的區域的抗鍍敷劑去除的步驟;在去除了上述抗鍍敷劑的形成有上述電路的區域設置電解鍍層(例如電解鍍銅層)的步驟;將上述抗鍍敷劑去除的步驟;及及藉由快速蝕刻等,將存在於上述供形成電路的區域以外的區域的無電解鍍層去除的步驟。 In another embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method, the method comprises the steps of: preparing a surface-treated copper foil of the present invention and a resin substrate; and self-depositing the surface-treated copper foil a step of laminating the resin substrate on the mold layer side; a step of peeling off the surface-treated copper foil after laminating the surface-treated copper foil and the resin substrate; and a peeling surface of the resin substrate produced by peeling off the surface-treated copper foil a step of cleaning the surface of the resin substrate with dilute sulfuric acid or the like and providing an electroless plating layer (for example, an electroless copper plating layer); and providing a plating resist on the electroless plating layer; and exposing the anti-plating agent a step of removing the plating resist for the region in which the circuit is formed; a step of providing an electrolytic plating layer (for example, an electrolytic copper plating layer) in a region where the above-mentioned circuit is formed by removing the plating resist; a step of removing the dressing; and a step of removing the electroless plating layer existing in the region other than the region for forming the circuit by rapid etching or the like.

如此,可在剝離表面處理銅箔後的樹脂基材的剝離面形成電 路,而製作印刷電路形成基板、半導體封裝用電路形成基板。進而可使用上述電路形成基板而製作印刷配線板、半導體封裝。進而可使用上述印刷配線板、半導體封裝而製作電子機器。 Thus, the peeling surface of the resin substrate after the surface-treated copper foil is peeled off can form electricity. In the road, a printed circuit forming substrate and a circuit forming substrate for semiconductor packaging are produced. Further, a printed wiring board or a semiconductor package can be produced by forming a substrate using the above-described circuit. Further, an electronic device can be produced by using the above printed wiring board or semiconductor package.

另一方面,在使用全加成法的本發明的印刷配線板之製造方法的另一個實施形態中,包括如下步驟:準備本發明的表面處理銅箔與樹脂基材的步驟;在上述表面處理銅箔自脫模層側積層樹脂基材的步驟;將上述表面處理銅箔與樹脂基材積層後,將上述表面處理銅箔剝離的步驟;針對將上述表面處理銅箔剝離而產生的樹脂基材的剝離面,利用稀硫酸等對樹脂基材表面進行清洗的步驟;在上述經清洗的樹脂基材表面設置抗鍍敷劑的步驟;對上述抗鍍敷劑進行曝光,其後將供形成電路的區域的抗鍍敷劑去除的步驟;在去除了上述抗鍍敷劑的形成有上述電路的區域設置無電解鍍層(例如無電解鍍銅層,也可為加厚的無電解鍍層)的步驟;及將上述抗鍍敷劑去除的步驟。 On the other hand, in another embodiment of the method for producing a printed wiring board of the present invention using the full additive method, the method comprising the steps of: preparing the surface-treated copper foil of the present invention and a resin substrate; and performing the above surface treatment a step of laminating a resin substrate from the release layer side of the copper foil; a step of peeling off the surface-treated copper foil after laminating the surface-treated copper foil and the resin substrate; and a resin base generated by peeling off the surface-treated copper foil a peeling surface of the material, a step of washing the surface of the resin substrate with dilute sulfuric acid or the like; a step of providing a plating resist on the surface of the cleaned resin substrate; exposing the plating resist to the surface, and thereafter forming a step of removing the plating resist in the region of the circuit; and providing an electroless plating layer (for example, an electroless copper plating layer or a thick electroless plating layer) in a region where the above-mentioned circuit is formed by removing the plating resist a step; and a step of removing the above-mentioned anti-plating agent.

此外,在半加成法及全加成法中,有存在如下效果的情況,即藉由將上述樹脂基材表面進行清洗而變得容易設置無電解鍍層。特別是在脫模層殘留在樹脂基材表面的情況下,有存在如下效果的情況,即藉由上述清洗而將脫模層的一部分或全部自樹脂基材表面去除,因此藉由上述 樹脂基材表面的清洗而變得更容易設置無電解鍍層。該清洗可使用利用公知的清洗方法(所使用的液的種類、溫度、液的塗布方法等)的清洗。另外,較佳為使用可將本發明的脫模層的一部分或全部去除的清洗方法。 Further, in the semi-additive method and the full-addition method, there is a case where it is easy to provide an electroless plating layer by washing the surface of the resin substrate. In particular, when the release layer remains on the surface of the resin substrate, there is a case where a part or all of the release layer is removed from the surface of the resin substrate by the above cleaning, and thus The surface of the resin substrate is cleaned to make it easier to provide an electroless plating layer. This cleaning can be carried out by washing using a known cleaning method (the type of liquid to be used, the temperature, the method of applying the liquid, etc.). Further, it is preferred to use a cleaning method which can remove a part or all of the release layer of the present invention.

如此,可藉由全加成法而在剝離表面處理銅箔後的樹脂基材 的剝離面形成電路,而製作印刷電路形成基板、半導體封裝用電路形成基板。進而可使用上述電路形成基板而製作印刷配線板、半導體封裝。進而可使用上述印刷配線板、半導體封裝而製作電子機器。 Thus, the resin substrate after the copper foil is peeled off by the full addition method The peeling surface forms a circuit to form a printed circuit forming substrate and a circuit forming substrate for semiconductor packaging. Further, a printed wiring board or a semiconductor package can be produced by forming a substrate using the above-described circuit. Further, an electronic device can be produced by using the above printed wiring board or semiconductor package.

此外,利用具備XPS(X射線光電子能譜裝置)、EPMA(電 子探針微量分析器)、EDX(能量分散型X射線分析)的掃描式電子顯微鏡等機器,對銅箔或表面處理銅箔的表面進行測定,如果檢測出Si,則可推測在銅箔或表面處理銅箔的表面存在矽烷化合物。另外,在表面處理銅箔與樹脂基板的剝離強度(剝離強度)為200gf/cm以下的情況下,可推測使用有可用于本案發明的脫模層上述矽烷化合物。 In addition, the use of XPS (X-ray photoelectron spectroscopy device), EPMA (electric A device such as a sub-probe microanalyzer or an EDX (energy dispersive X-ray analysis) scanning electron microscope measures the surface of a copper foil or a surface-treated copper foil. If Si is detected, it is presumed that it is in copper foil or A decane compound is present on the surface of the surface treated copper foil. When the peel strength (peel strength) of the surface-treated copper foil and the resin substrate is 200 gf/cm or less, it is presumed that the above-described decane compound which can be used in the release layer of the present invention is used.

另外,利用具備XPS(X射線光電子能譜裝置)、EPMA(電 子探針微量分析器)、EDX(能量分散型X射線分析)的掃描式電子顯微鏡等機器,對銅箔或表面處理銅箔的表面進行測定,在檢測到S的同時,表面處理銅箔與樹脂基板的剝離強度(剝離強度)為200gf/cm以下的情況下,可推測在銅箔或表面處理銅箔的表面存在可用于本案發明的脫模層的上述分子內具有2個以下之巰基的化合物。 In addition, it is equipped with XPS (X-ray photoelectron spectroscopy device), EPMA (electricity) A device such as a sub-probe microanalyzer) or an EDX (energy dispersive X-ray analysis) scanning electron microscope measures the surface of a copper foil or a surface-treated copper foil, and simultaneously detects the surface of the copper foil and detects the S When the peeling strength (peeling strength) of the resin substrate is 200 gf/cm or less, it is presumed that the surface of the copper foil or the surface-treated copper foil has two or less sulfhydryl groups in the molecule which can be used in the release layer of the present invention. Compound.

另外,利用具備XPS(X射線光電子能譜裝置)、EPMA(電子探針微量分析器)、EDX(能量分散型X射線分析)的掃描式電子顯微鏡等機器,對銅箔或表面處理銅箔的表面進行測定,在檢測到Al、Ti、Zr的同時,表 面處理銅箔與樹脂基板的剝離強度(剝離強度)為200gf/cm以下的情況下,可推測在銅箔或表面處理銅箔的表面存在可用于本案發明的脫模層的上述金屬烷氧化物。 In addition, a copper foil or a surface-treated copper foil is used in a device such as a scanning electron microscope including an XPS (X-ray photoelectron spectroscopy device), an EPMA (electron probe micro analyzer), and an EDX (energy dispersive X-ray analysis). The surface is measured, and when Al, Ti, and Zr are detected, the surface is When the peel strength (peel strength) of the surface-treated copper foil and the resin substrate is 200 gf/cm or less, it is presumed that the metal alkoxide which can be used for the release layer of the present invention is present on the surface of the copper foil or the surface-treated copper foil. .

[實施例] [Examples]

于以下表示實驗例作為本發明的實施例及比較例,這些實施例是為了更良好地理解本發明及其優點而提供,而並非意圖限定發明。 The following is a description of the embodiments of the present invention and the comparative examples, which are intended to provide a better understanding of the invention and its advantages, and are not intended to limit the invention.

‧生箔(表面處理前的銅箔)的製造 ‧Production of raw foil (copper foil before surface treatment)

於以下的各電解條件下,製作表1所記載的厚度的普通電解生箔及兩面平坦電解生箔。 Under the following respective electrolysis conditions, a common electrolytic green foil having a thickness described in Table 1 and a double-sided flat electrolytic green foil were produced.

(1)普通電解生箔 (1) Ordinary electrolytic foil

Cu 120g/L Cu 120g/L

H2SO4 100g/L H 2 SO 4 100g/L

氯化物離子(Cl-)70ppm Chloride ion (Cl - ) 70ppm

均化劑(膠)3ppm Leveling agent (glue) 3ppm

電解液溫度60℃ Electrolyte temperature 60 ° C

電流密度70A/dm2 Current density 70A/dm 2

電解液線速2m/sec Electrolyte line speed 2m/sec

(2)兩面平坦電解生箔 (2) Two-sided flat electrolytic foil

兩面平坦電解生箔的電解條件 Electrolytic conditions for flat electrolyzed foil on both sides

Cu 120g/L Cu 120g/L

H2SO4 100g/L H 2 SO 4 100g/L

氯化物離子(Cl-)70ppm Chloride ion (Cl - ) 70ppm

均化劑1(雙(3磺丙基)二硫化物)20ppm Leveling agent 1 (bis(3 sulfopropyl) disulfide) 20 ppm

均化劑2(胺化合物)20ppm Leveling agent 2 (amine compound) 20ppm

電解液溫度60℃ Electrolyte temperature 60 ° C

電流密度70A/dm2 Current density 70A/dm 2

電解液線速2m/sec Electrolyte line speed 2m/sec

上述胺化合物可使用以下的化學式的胺化合物。 As the above amine compound, an amine compound of the following chemical formula can be used.

(上述化學式中,R1及R2為選自由羥烷基、醚基、芳基、芳香族取代 烷基、不飽和烴基、烷基所組成之群中的基團)。 (In the above chemical formula, R 1 and R 2 are a group selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group).

‧表面處理 ‧Surface treatment

繼而,作為表面處理,可在以下所示的各條件下,對生箔的M面(無光澤面)進行粗化處理、障壁處理(耐熱處理)、防銹處理、矽烷偶合處理、樹脂層形成處理中的任一種處理,或者將各處理組合進行。繼而,在以下所示的條件下,在銅箔的上述處理側表面形成有脫模層。此外,在沒有特 別提及的情況下,各處理以上述記載的順序進行。 Then, as the surface treatment, the M surface (matte surface) of the green foil can be subjected to roughening treatment, barrier processing (heat treatment), rust prevention treatment, decane coupling treatment, and resin layer formation under the respective conditions described below. Any one of the processes is processed, or each process is combined. Then, a release layer was formed on the surface of the above-mentioned processing side of the copper foil under the conditions shown below. In addition, there is no special In the case of not mentioning, each process is performed in the order described above.

(1)粗化處理 (1) roughening treatment

[球狀粗化(通常)] [spherical roughening (usually)]

使用由Cu、H2SO4、As所構成的以下所記載的銅粗化鍍浴而形成球狀粗化粒子。 The spherical roughening particles are formed using the copper roughening plating bath described below composed of Cu, H 2 SO 4 , and As.

(液組成1) (liquid composition 1)

CuSO4‧5H2O 98g/L CuSO 4 ‧5H 2 O 98g/L

Cu 25g/L Cu 25g/L

H2SO4 100g/L H 2 SO 4 100g/L

砷1.5g/L Arsenic 1.5g/L

(電鍍溫度1)38℃ (plating temperature 1) 38 ° C

(電流條件1)電流密度70A/dm2(浴的極限電流密度以上) (current condition 1) current density 70A/dm 2 (above the limit current density of the bath)

繼而,為了粗化粒子的脫落防止與剝離強度提高,而利用由硫酸‧硫酸銅所組成的銅電解浴進行鍍敷。將鍍敷條件記載於以下。 Then, in order to prevent the peeling of the roughened particles and the peeling strength from being improved, plating was performed using a copper electrolytic bath composed of sulfuric acid and copper sulfate. The plating conditions are described below.

(液組成2) (liquid composition 2)

CuSO4‧5H2O 176g/L CuSO 4 ‧5H 2 O 176g/L

Cu 45g/L Cu 45g/L

H2SO4 100g/L H 2 SO 4 100g/L

(電鍍溫度2)45℃ (plating temperature 2) 45 ° C

(電流條件2)電流密度:29A/dm2(未達浴的極限電流密度) (Current condition 2) Current density: 29 A/dm 2 (unlimited current density of the bath)

[微細粗化(Type1)] [Micro-roughening (Type1)]

首先,在以下的條件下進行粗化處理。粗化粒子形成時的相對極限電流密度比設為2.50。 First, the roughening treatment is performed under the following conditions. The relative limit current density ratio at the time of formation of the roughened particles was set to 2.50.

(液組成1) (liquid composition 1)

CuSO4‧5H2O 58.9g/L CuSO 4 ‧5H 2 O 58.9g/L

Cu 15g/L Cu 15g/L

H2SO4 100g/L H 2 SO 4 100g/L

Na2WO4‧2H2O 5.4mg/L Na 2 WO 4 ‧2H 2 O 5.4mg/L

十二烷基硫酸鈉添加量10ppm Sodium lauryl sulfate added 10ppm

(電鍍溫度1)40℃ (plating temperature 1) 40 ° C

(電流條件1)電流密度54A/dm2 (current condition 1) current density 54A/dm 2

繼而,於下述所示的條件下進行正常鍍敷。 Then, normal plating was performed under the conditions shown below.

(液組成2) (liquid composition 2)

CuSO4‧5H2O 176g/L CuSO 4 ‧5H 2 O 176g/L

Cu 45g/L Cu 45g/L

H2SO4 100g/L H 2 SO 4 100g/L

(電鍍溫度2)45℃ (plating temperature 2) 45 ° C

(電流條件2)電流密度41A/dm2 (current condition 2) current density 41A/dm 2

[微細粗化(Type2)] [Micro-roughening (Type2)]

首先,以下述的液組成1及電鍍條件1形成Cu-Co-Ni三元系合金層後,以下述的液組成2及電鍍條件2,在該三元系合金層上形成鍍鈷層。 First, after forming a Cu-Co-Ni ternary alloy layer by the following liquid composition 1 and plating condition 1, a cobalt plating layer is formed on the ternary alloy layer by the following liquid composition 2 and plating condition 2.

(液組成1) (liquid composition 1)

Cu 10~20g/L Cu 10~20g/L

Co 1~10g/L Co 1~10g/L

Ni 1~10g/L Ni 1~10g/L

pH值1~4 pH 1~4

(電鍍溫度1)40~50℃ (plating temperature 1) 40~50°C

(電流條件1)電流密度25A/dm2 (current condition 1) current density 25A/dm 2

(液組成2) (liquid composition 2)

Co 1~30g/L Co 1~30g/L

Ni 1~30g/L Ni 1~30g/L

pH值1.0~3.5 pH 1.0~3.5

(電鍍溫度2)30~80℃ (plating temperature 2) 30~80°C

(電流條件2)電流密度5A/dm2 (current condition 2) current density 5A/dm 2

(2)障壁處理(耐熱處理) (2) Barrier treatment (heat treatment)

針對實施例9、11、12,在下述條件下進行障壁(耐熱)處理而形成鍍黃銅層。 With respect to Examples 9, 11, and 12, a barrier (heat-resistant) treatment was performed under the following conditions to form a brass-plated layer.

(液組成) (liquid composition)

Cu 70g/L Cu 70g/L

Zn 5g/L Zn 5g/L

NaOH 70g/L NaOH 70g/L

NaCN 20g/L NaCN 20g/L

(電鍍條件) (plating conditions)

溫度70℃ Temperature 70 ° C

電流密度8A/dm2(多級處理) Current density 8A/dm 2 (multi-stage processing)

(3)防銹處理 (3) Anti-rust treatment

針對實施例10、11、12,在下述條件下進行防銹處理(鋅鉻酸鹽處理)而形成防銹處理層。 With respect to Examples 10, 11, and 12, rust-preventing treatment (zinc chromate treatment) was carried out under the following conditions to form a rust-preventing treatment layer.

(液組成) (liquid composition)

CrO3 2.5g/L CrO 3 2.5g/L

Zn 0.7g/L Zn 0.7g/L

Na2SO4 10g/L Na 2 SO 4 10g/L

pH值4.8 pH 4.8

(鋅鉻酸鹽條件) (zinc chromate conditions)

溫度54℃ Temperature 54 ° C

電流密度0.7As/dm2 Current density 0.7As/dm 2

(4)矽烷偶合處理 (4) decane coupling treatment

針對實施例11、12,在下述條件下進行矽烷偶合劑塗布處理而形成矽烷偶合層。 With respect to Examples 11 and 12, a decane coupling agent coating treatment was carried out under the following conditions to form a decane coupling layer.

(液組成) (liquid composition)

烷氧基矽烷含量0.4% Alkoxydecane content 0.4%

pH值7.5 pH 7.5

塗布方法噴霧溶液 Coating method spray solution

(5)脫模層的形成 (5) Formation of release layer

[脫模層A] [Release layer A]

使用噴塗機,在銅箔的處理表面塗布矽烷化合物(正丙基三甲氧基矽烷:4wt%)的水溶液後,在100℃的空氣中將銅箔表面乾燥5分鐘而形成脫模層A。使矽烷化合物溶解于水中後直至進行塗布前的攪拌時間為30小時,水溶液中的醇濃度為0vol%,水溶液的pH值設為3.8~4.2。 Using a spray coater, an aqueous solution of a decane compound (n-propyltrimethoxydecane: 4% by weight) was applied to the treated surface of the copper foil, and then the surface of the copper foil was dried in air at 100 ° C for 5 minutes to form a release layer A. After the decane compound was dissolved in water until the stirring time before coating was 30 hours, the alcohol concentration in the aqueous solution was 0 vol%, and the pH of the aqueous solution was 3.8 to 4.2.

[脫模層B] [release layer B]

使用1-十二烷硫醇磺酸鈉作為分子內具有2個以下之巰基的化合物,使用噴塗機,在銅箔的處理面塗布1-十二烷硫醇磺酸鈉的水溶液(1-十二烷硫醇磺酸鈉濃度:3wt%)後,在100℃的空氣中乾燥5分鐘而製作脫模層B。水溶液的pH值設為5~9。 Using sodium 1-dodecyl mercaptan sulfonate as a compound having 2 or less sulfhydryl groups in the molecule, an aqueous solution of sodium 1-dodecanethiol sulfonate (1-10) was coated on the treated surface of the copper foil using a spray coater. After the sodium dialkyl mercaptan sulfonate concentration: 3 wt%), it was dried in air at 100 ° C for 5 minutes to prepare a release layer B. The pH of the aqueous solution is set to 5-9.

[脫模層C] [release layer C]

使用作為鋁酸酯化合物的三異丙氧基鋁作為金屬烷氧化物,使用噴塗機,在銅箔的處理面塗布三異丙氧基鋁的水溶液(三異丙氧基鋁濃度:0.04mol/L)後,在100℃的空氣中乾燥5分鐘而製作脫模層C。使鋁酸酯化合物溶解于水中後直至進行塗布前的攪拌時間為2小時,水溶液中的醇濃度為0vol%,水溶液的pH值設為5~9。 Using aluminum triisopropoxide as an aluminate compound as a metal alkoxide, an aqueous solution of aluminum triisopropoxide was applied to the treated surface of the copper foil using a spray coater (concentration of aluminum triisopropoxide: 0.04 mol/ After L), it was dried in air at 100 ° C for 5 minutes to prepare a release layer C. After the aluminate compound was dissolved in water until the stirring time before coating was 2 hours, the alcohol concentration in the aqueous solution was 0 vol%, and the pH of the aqueous solution was 5 to 9.

[脫模層D] [release layer D]

使用作為鈦酸酯化合物的正癸基-三異丙氧基鈦作為金屬烷氧化物,使用噴塗機,在銅箔的處理面塗布正癸基-三異丙氧基鈦的水溶液(正癸基-三異丙氧基鈦濃度:0.01mol/L)後,在100℃的空氣中乾燥5分鐘而製作脫模層D。使鈦酸酯化合物溶解于水中後直至進行塗布前的攪拌時間為24小時,關於水溶液中的醇濃度,將甲醇設為20vol%,水溶液的pH值設為5~9。 Using n-decyl-triisopropoxytitanium as a titanate compound as a metal alkoxide, an aqueous solution of n-decyl-triisopropoxytitanium was coated on the treated surface of the copper foil using a spray coater (n-decyl group) After the concentration of titanium triisopropoxide: 0.01 mol/L, it was dried in air at 100 ° C for 5 minutes to prepare a release layer D. After the titanate compound was dissolved in water until the stirring time before the coating was 24 hours, the methanol concentration in the aqueous solution was 20 vol%, and the pH of the aqueous solution was 5 to 9.

[脫模層E] [release layer E]

使用作為鋯酸酯化合物的正丙基-三正丁氧基鋯作為金屬烷氧化物,使用噴塗機,在銅箔的處理面塗布正丙基-三正丁氧基鋯的水溶液(正丙基-三正丁氧基鋯濃度:0.04mol/L)後,在100℃的空氣中乾燥5分鐘而製造脫模層E。使鈦酸酯化合物溶解于水中後直至進行塗布前的攪拌時間為12小時,水溶液中的醇濃度設為0vol%,水溶液的pH值設為5~9。 Using n-propyl-tri-n-butoxyzirconium as a zirconate compound as a metal alkoxide, an aqueous solution of n-propyl-tri-n-butoxyzirconium (n-propyl group) was applied to the treated surface of the copper foil using a spray coater. After the concentration of tri-n-butoxyzirconium: 0.04 mol/L, it was dried in air at 100 ° C for 5 minutes to produce a release layer E. After the titanate compound was dissolved in water until the stirring time before coating was 12 hours, the alcohol concentration in the aqueous solution was set to 0 vol%, and the pH of the aqueous solution was set to 5 to 9.

關於實施例19~54及比較例6~7的脫模層,在利用矽烷化 合物的情況下,下述表未作記載的脫模層形成條件與脫模層A相同。另外,在利用巰基化合物的情況下,下述表未作記載的脫模層形成條件與脫模層B相同。另外,在利用金屬烷氧化物的情況下,下述表未作記載的脫模層形成條件與脫模層C相同。 The release layers of Examples 19 to 54 and Comparative Examples 6 to 7 were subjected to decaneization. In the case of the compound, the release layer forming conditions not described in the following tables are the same as those of the release layer A. Further, in the case of using a mercapto compound, the release layer formation conditions not described in the following Table are the same as those of the release layer B. Further, in the case of using a metal alkoxide, the release layer forming conditions not described in the following table are the same as those of the release layer C.

(6)樹脂層形成處理 (6) Resin layer formation treatment

關於實施例12,在障壁處理、防銹處理、矽烷偶合劑塗布、脫模層形 成之後,進而在下述條件下進行樹脂層的形成。 Regarding Example 12, in the barrier treatment, the rustproof treatment, the decane coupling agent coating, and the release layer shape After the formation, the formation of the resin layer was further carried out under the following conditions.

(樹脂合成例) (Resin Synthesis Example)

在附帶不銹鋼製的錨型攪拌棒、氮氣導入管及終止栓的分離器上,向安裝有帶有球形冷凝管的回流冷卻器的2升的三口燒瓶添加3,4,3',4'-聯苯四羧酸二酐117.68g(400mmol)、1,3-雙(3-胺基苯氧基)苯87.7g(300mmol)、γ-戊內酯4.0g(40mmol)、吡啶4.8g(60mmol)、N-甲基-2-吡咯烷酮(以下記載為NMP)300g、甲苯20g,於180℃加熱1小時後冷卻至室溫附近,之後添加3,4,3',4'-聯苯四羧酸二酐29.42g(100mmol)、2,2-雙{4-(4-胺基苯氧基)苯基}丙烷82.12g(200mmol)、NMP 200g、甲苯40g,於室溫下混合1小時後,於180℃加熱3小時,獲得固形物成分38%的嵌段共聚合聚醯亞胺。關於該嵌段共聚合聚醯亞胺,下述所示的通式(1):通式(2)=3:2,數均分子量:70000,重量平均分子量:150000。 Add 3,4,3',4'- to a 2-liter three-necked flask equipped with a reflux condenser with a spherical condenser on a separator with a stainless steel anchor stir bar, nitrogen inlet pipe and end plug. Benzene tetracarboxylic dianhydride 117.68 g (400 mmol), 1,3-bis(3-aminophenoxy)benzene 87.7 g (300 mmol), γ-valerolactone 4.0 g (40 mmol), pyridine 4.8 g (60 mmol) ), 300 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) and 20 g of toluene were heated at 180 ° C for 1 hour, and then cooled to near room temperature, after which 3,4,3',4'-biphenyltetracarboxylate was added. Acid dianhydride 29.42 g (100 mmol), 2,2-bis{4-(4-aminophenoxy)phenyl}propane 82.12 g (200 mmol), NMP 200 g, toluene 40 g, mixed at room temperature for 1 hour After heating at 180 ° C for 3 hours, a block copolymerized polyimine of 38% of a solid content was obtained. The block copolymerized polyimine has the following general formula (1): general formula (2) = 3:2, number average molecular weight: 70,000, and weight average molecular weight: 150,000.

利用NMP進一步稀釋合成例中所獲得的嵌段共聚合聚醯亞 胺溶液,而製成固形物成分10%的嵌段共聚合聚醯亞胺溶液。使固形物成 分重量比率35的雙(4-馬來醯亞胺苯基)甲烷(BMI-H,KI Chemical Industry)、固形物成分重量比率65的嵌段共聚合聚醯亞胺(即,樹脂溶液所包含的雙(4-馬來醯亞胺苯基)甲烷固形物成分重量:樹脂溶液所包含的嵌段共聚合聚醯亞胺固形物成分重量=35:65)於60℃溶解混合于該嵌段共聚合聚醯亞胺溶液中而製成樹脂溶液。其後,向實施例12的脫模層形成面塗布上述樹脂溶液,於氮氣環境下,於120℃進行3分鐘乾燥處理,於160℃進行3分鐘乾燥處理後,最後於300℃進行2分鐘加熱處理,而製作具備樹脂層的銅箔。此外,樹脂層的厚度設為2μm。 Further diluting the block copolymerized polyfluorene obtained in the synthesis example by using NMP The amine solution was made into a block copolymerized polyimine solution having a solid content of 10%. Solid matter A block copolymerized polyimine of bis(4-maleimidophenyl)methane (BMI-H, KI Chemical Industry) at a weight ratio of 35, and a solid component weight ratio of 65 (i.e., contained in a resin solution) Bis(4-maleimide phenyl)methane solids component weight: block copolymer copolymerized polyimine solid content component of resin solution = 35:65) dissolved at 60 ° C mixed in the block The resin solution was prepared by copolymerizing a polyimine solution. Thereafter, the resin solution was applied to the release layer forming surface of Example 12, dried in a nitrogen atmosphere at 120 ° C for 3 minutes, dried at 160 ° C for 3 minutes, and finally heated at 300 ° C for 2 minutes. The copper foil having a resin layer was produced by the treatment. Further, the thickness of the resin layer was set to 2 μm.

‧銅箔(生箔)及表面處理銅箔的表面粗糙度Rz的評價 ‧ Evaluation of surface roughness Rz of copper foil (raw foil) and surface treated copper foil

使用小阪研究所股份有限公司製造的接觸粗糙度計SP-11,依據JIS B0601(1994年),對表面處理銅箔的處理表面的十點平均粗糙度Rz進行測定。變更測定位置進行10次測定,求出10次測定中的值。另外,以相同方式,也對表面處理前的銅箔(生箔)的表面粗糙度Rz進行測定。 The ten-point average roughness Rz of the treated surface of the surface-treated copper foil was measured in accordance with JIS B0601 (1994) using a contact roughness meter SP-11 manufactured by Kosaka Research Institute Co., Ltd. The measurement position was changed 10 times, and the value in 10 measurements was obtained. Further, in the same manner, the surface roughness Rz of the copper foil (raw foil) before the surface treatment was also measured.

‧覆銅積層板的製造 ‧Manufacturing of copper clad laminates

在各表面處理銅箔的處理側表面貼合以下的樹脂基材1~3中的任一種樹脂基材。 One of the following resin base materials 1 to 3 is bonded to the surface of the treated side of each surface-treated copper foil.

基材1:三菱瓦斯化學(股)製造GHPL-830 MBT Substrate 1: Mitsubishi Gas Chemical Co., Ltd. manufactures GHPL-830 MBT

基材2:日立化成工業(股)製造679-FG Substrate 2: Hitachi Chemical Industry Co., Ltd. manufactures 679-FG

基材3:住友電木(股)製造EI-6785TS-F Substrate 3: Sumitomo Bakelite Co., Ltd. manufactures EI-6785TS-F

積層加壓的溫度、壓力、時間是使用各基材廠商的推薦條件。 The temperature, pressure, and time of the build-up pressure are recommended by the manufacturer of each substrate.

‧剝離強度(剝離強度)的評價 ‧ Evaluation of peel strength (peel strength)

針對覆銅積層板,依據IPC-TM-650,利用拉伸試驗機自動立體測圖儀100,對自銅箔將樹脂基材進行剝離時的常態剝離強度進行測定。 The copper-clad laminate was measured by the tensile tester autostereograph 100 according to IPC-TM-650, and the normal peel strength when peeling the resin substrate from the copper foil was measured.

‧樹脂的破裂方式的評價 ‧Evaluation of the rupture mode of the resin

利用電子顯微鏡,對上述剝離後的樹脂基材的剝離面進行觀察,對樹脂的破裂方式(凝集、界面、凝集與界面混合存在)進行觀察。關於樹脂的破裂方式,「界面」表示在銅箔與樹脂的界面產生剝離,「凝集」表示剝離強度過強而樹脂破裂,「混合存在」表示上述「界面」與「凝集」混合存在。 The peeling surface of the resin substrate after peeling was observed with an electron microscope, and the cracking method (aggregation, interface, aggregation, and interfacial mixing) of the resin was observed. Regarding the cracking method of the resin, the "interface" indicates that peeling occurs at the interface between the copper foil and the resin, "aggregation" indicates that the peel strength is too strong, and the resin is broken, and "mixed presence" indicates that the "interface" and "aggregation" are mixed.

‧配線形成性 ‧Wiring formation

針對利用依據圖1的半加成法,對樹脂基材實施無電解鍍銅、電解鍍銅,而將銅層厚度設為12μm的附帶鍍銅層的積層板,利用蝕刻對鍍銅層進行加工,而形成L(線)/S(空間)=30μm/30μm電路。此時,利用100~500倍的光學顯微鏡對形成在樹脂基板上的配線進行觀察,將沒有電路缺損的情況設為OK(○),將存在電路缺損的情況設為NG(×)。 With respect to the semi-additive method according to FIG. 1 , the resin substrate is subjected to electroless copper plating or electrolytic copper plating, and a copper plate having a copper layer thickness of 12 μm is laminated, and the copper plating layer is processed by etching. And form L (line) / S (space) = 30 μm / 30 μm circuit. At this time, the wiring formed on the resin substrate was observed with an optical microscope of 100 to 500 times, and the case where no circuit defect was present was set to OK (○), and the case where the circuit defect was present was set to NG (×).

將各試驗條件及評價結果示於表1~4。 The test conditions and evaluation results are shown in Tables 1 to 4.

如表1~4所示,關於實施例1~54,設置有特定的脫模層,而抑制剝離強度,樹脂的破裂方式僅界面。因此,可謂在與樹脂基材貼合後,可進行物理剝離。 As shown in Tables 1 to 4, in Examples 1 to 54, a specific release layer was provided, and the peel strength was suppressed, and the cracking mode of the resin was only the interface. Therefore, it can be said that physical peeling can be performed after bonding to a resin base material.

另一方面,關於比較例1~7,未設置有脫模層,或者因用作要形成脫模層的化合物不合適而無法形成脫模層,而剝離強度較大,樹脂的破裂方式為凝集、與凝集與界面的混合存在中的任一種。因此,可謂在與樹脂基材貼合後,無法進行物理剝離。 On the other hand, in Comparative Examples 1 to 7, the release layer was not provided, or the release layer was not formed because the compound to be used for forming the release layer was not suitable, and the peel strength was large, and the cracking mode of the resin was agglomeration. Any of a mixture of agglutination and interface. Therefore, it can be said that physical peeling cannot be performed after bonding to a resin base material.

Claims (30)

一種表面處理銅箔,其具備:銅箔,其係不具有粗化粒子且依據JIS B0601(1994年)所測得之Rz為0.1~5.0μm的具有表面凹凸之銅箔;與脫模層,其係設置在上述銅箔之具有表面凹凸的面之脫模層,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離。 A surface-treated copper foil comprising: a copper foil which has no roughened particles and has a surface roughness of 0.1 to 5.0 μm according to JIS B0601 (1994); and a release layer, The release layer is provided on the surface of the copper foil having the surface unevenness, and the resin substrate when the resin substrate is bonded to the copper foil from the release layer side is peelable. 如申請專利範圍第1項之表面處理銅箔,其中,從上述脫模層側向上述銅箔貼合樹脂基材時,上述樹脂基材進行剝離時的剝離強度為200gf/cm以下。 The surface-treated copper foil according to the first aspect of the invention, wherein the resin substrate is bonded to the copper foil from the side of the release layer, and the peel strength at the time of peeling off the resin substrate is 200 gf/cm or less. 如申請專利範圍第1項之表面處理銅箔,其中,上述脫模層是將下式所示之矽烷化合物、其水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, (式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基)。 The surface-treated copper foil according to the first aspect of the invention, wherein the mold release layer is obtained by using a decane compound represented by the following formula, a hydrolyzed product thereof, or a condensate of the hydrolyzed product, alone or in combination. (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; And any one of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms are substituted. Any of these hydrocarbon groups which are halogen atoms). 如申請專利範圍第1項之表面處理銅箔,其中,上述脫模層是使用分子內具有2個以下之巰基的化合物而成。 The surface-treated copper foil according to the first aspect of the invention, wherein the release layer is a compound having two or less sulfhydryl groups in the molecule. 如申請專利範圍第1項之表面處理銅箔,其中,上述脫模層是將下式所示的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、該等水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成,(R1)m-M-(R2)n(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基,此外,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4)。 The surface-treated copper foil according to the first aspect of the invention, wherein the release layer is an aluminate compound, a titanate compound, a zirconate compound, or a hydrolyzed product represented by the following formula, which is hydrolyzed. The condensate of the substance is used singly or in combination of two or more, (R 1 ) m -M-(R 2 ) n (wherein R 1 is an alkoxy group or a halogen atom, and R 2 is selected from an alkyl group or a cycloalkane. a hydrocarbon group in the group consisting of a group and an aryl group, or any one of the hydrocarbon groups in which one or more hydrogen atoms are substituted with a halogen atom, and M is any one of Al, Ti, and Zr, and n is 0 or 1 or 2 m is an integer of 1 or more and a valence of M or less, and at least one of R 1 is an alkoxy group, and m+n is a valence of M, that is, 3 in the case of Al, and Ti. In the case of Zr, it is 4). 一種表面處理銅箔,其具備:銅箔,其具有粗化粒子;與脫模層,其是設置在上述銅箔之粗化粒子面的脫模層,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離。 A surface-treated copper foil comprising: a copper foil having roughened particles; and a release layer which is a release layer provided on a surface of the roughened particles of the copper foil, and is provided from the side of the release layer to the side The resin substrate described above when the copper foil is bonded to the resin substrate can be peeled off. 如申請專利範圍第6項之表面處理銅箔,其中,從上述脫模層側向上述銅箔貼合樹脂基材時,上述樹脂基材進行剝離時的剝離強度為200gf/cm以下。 The surface-treated copper foil according to the sixth aspect of the invention, wherein, when the resin substrate is bonded to the copper foil from the side of the release layer, the peel strength at the time of peeling off the resin substrate is 200 gf/cm or less. 如申請專利範圍第6項之表面處理銅箔,其中,上述脫模層是將下式所示之矽烷化合物、其水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, (式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基)。 The surface-treated copper foil according to the sixth aspect of the invention, wherein the mold release layer is obtained by using a decane compound represented by the following formula, a hydrolyzed product thereof, or a condensate of the hydrolyzed product, alone or in combination. (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; And any one of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms are substituted. Any of these hydrocarbon groups which are halogen atoms). 如申請專利範圍第2或7項之表面處理銅箔,其中,上述脫模層是將下式所示之矽烷化合物、其水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, (式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基)。 The surface-treated copper foil according to the second or seventh aspect of the invention, wherein the mold release layer is a decane compound represented by the following formula, a hydrolyzed product thereof, or a condensate of the hydrolyzed product, used alone or in combination. to make, (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; And any one of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms are substituted. Any of these hydrocarbon groups which are halogen atoms). 如申請專利範圍第6項之表面處理銅箔,其中,上述脫模層是使用分子內具有2個以下之巰基的化合物而成。 The surface-treated copper foil according to claim 6, wherein the release layer is a compound having two or less sulfhydryl groups in the molecule. 如申請專利範圍第2或7項之表面處理銅箔,其中,上述脫模層是 使用分子內具有2個以下之巰基的化合物而成。 The surface treated copper foil of claim 2 or 7, wherein the release layer is A compound having two or less sulfhydryl groups in the molecule is used. 如申請專利範圍第6項之表面處理銅箔,其中,上述脫模層是將下式所示的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、該等水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成,(R1)m-M-(R2)n(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基,此外,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4)。 The surface-treated copper foil according to the sixth aspect of the invention, wherein the release layer is an aluminate compound, a titanate compound, a zirconate compound, or a hydrolyzate produced by the following formula, and the hydrolysis is formed. The condensate of the substance is used singly or in combination of two or more, (R 1 ) m -M-(R 2 ) n (wherein R 1 is an alkoxy group or a halogen atom, and R 2 is selected from an alkyl group or a cycloalkane. a hydrocarbon group in the group consisting of a group and an aryl group, or any one of the hydrocarbon groups in which one or more hydrogen atoms are substituted with a halogen atom, and M is any one of Al, Ti, and Zr, and n is 0 or 1 or 2 m is an integer of 1 or more and a valence of M or less, and at least one of R 1 is an alkoxy group, and m+n is a valence of M, that is, 3 in the case of Al, and Ti. In the case of Zr, it is 4). 如申請專利範圍第2或7項之表面處理銅箔,其中,上述脫模層是將下式所示的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、該等水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成,(R1)m-M-(R2)n(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基,此外,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4)。 The surface-treated copper foil according to claim 2, wherein the release layer is an aluminate compound, a titanate compound, a zirconate compound, or the like, which is represented by the following formula, The condensate of the hydrolyzate is used singly or in combination of two or more, (R 1 ) m -M-(R 2 ) n (wherein R 1 is an alkoxy group or a halogen atom, and R 2 is selected from an alkyl group, a hydrocarbon group in a group consisting of a cycloalkyl group and an aryl group, or any one of the hydrocarbon groups in which one or more hydrogen atoms are substituted with a halogen atom, and M is any one of Al, Ti, and Zr, and n is 0 or 1 Or 2, m is an integer of 1 or more and a valence of M or less, and at least one of R 1 is an alkoxy group, and m+n is a valence of M, that is, 3 in the case of Al, In the case of Ti and Zr, it is 4). 如申請專利範圍第1至8、10、12項中任一項之表面處理銅箔,其中,在上述銅箔與上述脫模層之間設置有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的一種以上的層。 The surface-treated copper foil according to any one of the preceding claims, wherein the copper foil and the release layer are provided with a heat-resistant layer, a rustproof layer, and a chromate. One or more layers of the group consisting of the treatment layer and the decane coupling treatment layer. 如申請專利範圍第1至8、10、12項中任一項之表面處理銅箔,其中,在上述表面處理銅箔的表面設置有樹脂層。 The surface-treated copper foil according to any one of claims 1 to 8, 10, and 12, wherein a surface of the surface-treated copper foil is provided with a resin layer. 如申請專利範圍第14項之表面處理銅箔,其中,在上述表面處理銅箔的表面設置有樹脂層。 The surface-treated copper foil according to claim 14, wherein a surface of the surface-treated copper foil is provided with a resin layer. 如申請專利範圍第15項之表面處理銅箔,其中,上述樹脂層為接合用樹脂、底漆或半硬化狀態的樹脂。 The surface-treated copper foil according to claim 15, wherein the resin layer is a resin for bonding, a primer or a resin in a semi-hardened state. 如申請專利範圍第1至8、10、12項中任一項之表面處理銅箔,其中,上述表面處理銅箔的厚度為9~70μm。 The surface-treated copper foil according to any one of claims 1 to 8, 10, and 12, wherein the surface-treated copper foil has a thickness of 9 to 70 μm. 如申請專利範圍第1至8、10、12項中任一項之表面處理銅箔,其可用於印刷配線板之製造方法,該製造方法具備下述步驟:從上述脫模層側將樹脂基材貼合在上述表面處理銅箔的步驟;藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離,而獲得在剝離面轉印有上述銅箔之表面輪廓的樹脂基材的步驟;及在轉印有上述表面輪廓之樹脂基材的上述剝離面側形成電路的步驟。 The surface-treated copper foil according to any one of claims 1 to 8, 10, and 12, which is applicable to a method for producing a printed wiring board, the method comprising the steps of: resin-based from the side of the release layer a step of bonding the material to the surface-treated copper foil; and peeling off the surface-treated copper foil from the resin substrate without etching, thereby obtaining a resin having a surface profile of the copper foil transferred on the peeling surface a step of forming a substrate; and a step of forming a circuit on the side of the peeling surface of the resin substrate to which the surface profile is transferred. 一種表面處理銅箔,其係具備:銅箔,其係不具有粗化粒子且依據JIS B0601(1994年)所測得之Rz為0.1~5.0μm的具有表面凹凸的銅箔;與脫模層,其係設置在上述銅箔之具有表面凹凸的面的脫模層,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離;的表面處理銅箔,並且滿足以下(A)~(I)中的任一項以上,(A)從上述脫模層側向上述銅箔貼合樹脂基材時,上述樹脂基材進行剝離時的剝離強度為200gf/cm以下; (B)上述脫模層是將下式所示之矽烷化合物、其水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, (式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基);(C)上述脫模層是使用分子內具有2個以下之巰基的化合物而成;(D)上述脫模層是將下式所示的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、該等水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成,(R1)m-M-(R2)n(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基,此外,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4);(E)在上述銅箔與上述脫模層之間設置有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的一種以上的層; (F)在上述表面處理銅箔的表面設置有樹脂層;(G)在上述(F)中,上述樹脂層為接合用樹脂、底漆或半硬化狀態的樹脂;(H)上述表面處理銅箔的厚度為9~70μm;(I)可用於印刷配線板之製造方法,該製造方法具備下述步驟:從上述脫模層側將樹脂基材貼合在上述表面處理銅箔的步驟;藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離,而獲得在剝離面轉印有上述銅箔的表面輪廓之樹脂基材的步驟;及在轉印有上述表面輪廓之樹脂基材的上述剝離面側形成電路的步驟。 A surface-treated copper foil comprising: a copper foil having a roughened particle and having a surface roughness of 0.1 to 5.0 μm according to JIS B0601 (1994); and a release layer The surface-treated copper foil which is provided on the surface of the copper foil having the surface unevenness and the release layer, and the resin substrate when the resin substrate is bonded to the copper foil from the release layer side is peelable; When the resin substrate is bonded to the copper foil from the mold release layer side to the above-mentioned (A) to (I), the peel strength at the time of peeling off the resin substrate is 200 gf. (B) The above-mentioned release layer is obtained by using a decane compound represented by the following formula, a hydrolyzate thereof, or a condensate of the hydrolyzate, either alone or in combination. (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; And any one of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms are substituted. (C) the above-mentioned release layer is a compound having two or less sulfhydryl groups in the molecule; (D) the above release layer is an aluminate represented by the following formula The compound, the titanate compound, the zirconate compound, the hydrolyzate, and the condensate of the hydrolyzate are used singly or in combination of two or more, (R 1 ) m -M-(R 2 ) n (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or any one of which one or more hydrogen atoms are substituted with a halogen atom. a hydrocarbon group, M is any one of Al, Ti, and Zr, n is 0 or 1 or 2, and m is an integer of 1 or more and a valence of M or less, R 1 is at least one alkoxy group, in addition, m + n is the valence of M, i.e., in the case of Al is 3, in the case of Ti, Zr is is 4); (E) In the above copper foil One or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate-treated layer, and a decane coupling treatment layer are disposed between the release layer; (F) a surface of the surface-treated copper foil (G) In the above (F), the resin layer is a resin for bonding, a primer or a resin in a semi-cured state; (H) the surface-treated copper foil has a thickness of 9 to 70 μm; (I) A method for producing a printed wiring board, the method comprising the steps of: bonding a resin substrate to the surface-treated copper foil from the side of the release layer; and etching the surface-treated copper foil without etching In the case of peeling off from the resin substrate, a step of transferring a resin substrate having a surface profile of the copper foil on the peeling surface; and forming a circuit on the peeling surface side of the resin substrate to which the surface profile is transferred is obtained A step of. 一種表面處理銅箔,其係具備:銅箔,其具有粗化粒子;與脫模層,其係設置在上述銅箔的粗化粒子面的脫模層,且使從上述脫模層側向上述銅箔貼合樹脂基材時的上述樹脂基材可剝離;的表面處理銅箔,並且滿足以下(A)~(I)中的任一項以上,(A)從上述脫模層側向上述銅箔貼合樹脂基材時,將上述樹脂基材進行剝離時的剝離強度為200gf/cm以下;(B)上述脫模層是將下式所示之矽烷化合物、其水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成, (式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組 成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,R3及R4分別獨立為鹵素原子、或烷氧基、或選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的上述任一種烴基);(C)上述脫模層是使用分子內具有2個以下之巰基的化合物而成;(D)上述脫模層是將下式所示的鋁酸酯化合物、鈦酸酯化合物、鋯酸酯化合物、該等水解生成物、該水解生成物的縮合物單獨使用或組合多種使用而成,(R1)m-M-(R2)n(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中的烴基,或者為一個以上之氫原子被取代為鹵素原子的該等任一種烴基,M為Al、Ti、Zr中的任一種,n為0或1或2,m為1以上且M之價數以下的整數,R1的至少1個為烷氧基,此外,m+n為M的價數,即在為Al的情況下為3,在為Ti、Zr的情況下為4);(E)在上述銅箔與上述脫模層之間設置有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的一種以上的層;(F)在上述表面處理銅箔的表面設置有樹脂層;(G)在上述(F)中,上述樹脂層為接合用樹脂、底漆或半硬化狀態的樹脂;(H)上述表面處理銅箔的厚度為9~70μm;(I)可用於印刷配線板之製造方法,該製造方法具備下述步驟:從上述 脫模層側將樹脂基材貼合在上述表面處理銅箔的步驟;藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離,而獲得在剝離面轉印有上述銅箔之表面輪廓的樹脂基材的步驟;及在轉印有上述表面輪廓之樹脂基材的上述剝離面側形成電路的步驟。 A surface-treated copper foil comprising: a copper foil having roughened particles; and a release layer provided on a release layer of the roughened particle surface of the copper foil, and laterally from the release layer When the copper foil is bonded to the resin substrate, the resin substrate is peelable; the surface-treated copper foil satisfies any one of the following (A) to (I), and (A) laterally from the release layer When the copper foil is bonded to the resin substrate, the peeling strength when the resin substrate is peeled off is 200 gf/cm or less; and (B) the release layer is a decane compound represented by the following formula, and a hydrolyzed product thereof. The condensate of the hydrolysis product is used singly or in combination of two or more. (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; And any one of the hydrocarbon groups, wherein R 3 and R 4 are each independently a halogen atom or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms are substituted. (C) the above-mentioned release layer is a compound having two or less sulfhydryl groups in the molecule; (D) the above release layer is an aluminate compound represented by the following formula And a titanate compound, a zirconate compound, the hydrolyzate, and a condensate of the hydrolyzate are used singly or in combination of two or more, (R 1 ) m -M-(R 2 ) n (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or any one of the hydrocarbon groups in which one or more hydrogen atoms are substituted with a halogen atom M is any one of Al, Ti, and Zr, n is 0 or 1 or 2, and m is an integer of 1 or more and a valence of M or less, R 1 is at least one alkoxy group, in addition, m + n is the valence of M, i.e., in the case of Al is 3, in the case of Ti, Zr is is 4); (E) In the above copper foil Between the above-mentioned release layer, one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventive layer, a chromate-treated layer, and a decane coupling treatment layer; (F) a surface of the surface-treated copper foil (G) In the above (F), the resin layer is a resin for bonding, a primer or a resin in a semi-cured state; (H) the surface-treated copper foil has a thickness of 9 to 70 μm; (I) A method for producing a printed wiring board, the method comprising the steps of: bonding a resin substrate to the surface-treated copper foil from the side of the release layer; and etching the surface-treated copper foil without etching In the case of peeling from the resin substrate, a step of transferring a resin substrate having a surface profile of the copper foil on the release surface; and forming a circuit on the peeling surface side of the resin substrate having the surface profile transferred thereto A step of. 一種覆銅積層板,其具備:申請專利範圍第1至21項中任一項之表面處理銅箔、與設置在上述表面處理銅箔之脫模層側的樹脂基材。 A copper-clad laminate comprising: a surface-treated copper foil according to any one of claims 1 to 21; and a resin substrate provided on a side of the release layer of the surface-treated copper foil. 如申請專利範圍第22項之覆銅積層板,其中,上述樹脂基材為預浸體,或含有熱硬化性樹脂。 The copper clad laminate according to claim 22, wherein the resin substrate is a prepreg or a thermosetting resin. 一種印刷配線板,其使用申請專利範圍第1至21項中任一項之表面處理銅箔。 A printed wiring board using the surface-treated copper foil according to any one of claims 1 to 21. 一種印刷配線板,其係使用申請專利範圍第1至21項中任一項之表面處理銅箔而製造。 A printed wiring board manufactured by using the surface-treated copper foil according to any one of claims 1 to 21. 一種半導體封裝,其具備申請專利範圍第24或25項之印刷配線板。 A semiconductor package comprising the printed wiring board of claim 24 or 25. 一種電子機器,其使用申請專利範圍第24項之印刷配線板或申請專利範圍第26項之半導體封裝。 An electronic machine using the printed wiring board of claim 24 or the semiconductor package of claim 26 of the patent application. 一種印刷配線板之製造方法,其具備下述步驟:從上述脫模層側將樹脂基材貼合在申請專利範圍第1至21項中任一項之表面處理銅箔的步驟;藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離,而獲得在剝離面轉印有上述銅箔之表面輪廓的樹脂基材的步驟;及在轉印有上述表面輪廓之樹脂基材的上述剝離面側形成電路的步驟。 A method of producing a printed wiring board, comprising the steps of: bonding a resin substrate to the surface-treated copper foil according to any one of claims 1 to 21 from the side of the release layer; a step of peeling the surface-treated copper foil from the resin substrate without etching to obtain a resin substrate having a surface profile of the copper foil transferred on the peeling surface; and a resin having the surface profile transferred thereon The step of forming a circuit on the peeling surface side of the substrate. 一種印刷配線板,其係藉由申請專利範圍第28項之方法而製造。 A printed wiring board manufactured by the method of claim 28 of the patent application. 一種樹脂基材,其係從上述脫模層側將樹脂基材貼合在申請專利範圍第1至21項中任一項之表面處理銅箔後,藉由將上述表面處理銅箔在不進行蝕刻的情況下從上述樹脂基材剝離,而在剝離面轉印有上述銅箔之表面輪廓的樹脂基材。 A resin substrate obtained by laminating a resin substrate from the side of the release layer to the surface-treated copper foil according to any one of claims 1 to 21, by not subjecting the surface-treated copper foil to In the case of etching, the resin substrate is peeled off from the resin substrate, and the surface profile of the copper foil is transferred onto the release surface.
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CN104943255A (en) 2015-09-30
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JP5826322B2 (en) 2015-12-02
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CN110099518A (en) 2019-08-06
KR20170118001A (en) 2017-10-24

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