TWI660658B - Method for manufacturing release foil-attached metal foil, metal foil, laminate, printed wiring board, semiconductor package, electronic device, and printed wiring board - Google Patents

Method for manufacturing release foil-attached metal foil, metal foil, laminate, printed wiring board, semiconductor package, electronic device, and printed wiring board Download PDF

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TWI660658B
TWI660658B TW106145729A TW106145729A TWI660658B TW I660658 B TWI660658 B TW I660658B TW 106145729 A TW106145729 A TW 106145729A TW 106145729 A TW106145729 A TW 106145729A TW I660658 B TWI660658 B TW I660658B
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metal foil
release layer
layer
group
resin
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TW106145729A
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TW201832628A (en
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森山晃正
石井雅史
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日商Jx金屬股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
    • B32B3/26Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

本發明藉由控制金屬箔表面的凹凸狀態、以及提供“在金屬箔設置脫模層而能實現將該金屬箔貼合在樹脂基材時的樹脂基材的物理剝離的金屬箔”,而低成本地製造具有微細電路的印刷配線板。本發明涉及一種附脫模層金屬箔,其具備:具有第一面及第二面且第一面的均方根高度Sq為0.01μm以上且1μm以下的金屬箔、以及設置在金屬箔的第二面的脫模層。 The present invention controls the uneven state of the surface of the metal foil and provides "a metal foil capable of physically peeling the resin substrate when the metal foil is bonded to the resin substrate by providing a release layer on the metal foil", and has a low Cost-effectively manufacture a printed wiring board having fine circuits. The present invention relates to a metal foil with a release layer, comprising: a metal foil having a first surface and a second surface, and a root mean square height Sq of the first surface of 0.01 μm or more and 1 μm or less; Two-sided release layer.

Description

附脫模層金屬箔、金屬箔、積層體、印刷配線板、半導體封裝、電子機器及印刷配線板的製造方法    Method for manufacturing release foil-attached metal foil, metal foil, laminate, printed wiring board, semiconductor package, electronic device, and printed wiring board   

本發明涉及一種附脫模層金屬箔、金屬箔、積層體、印刷配線板、半導體封裝、電子機器及印刷配線板的製造方法。 The invention relates to a method for manufacturing a metal foil with a release layer, a metal foil, a laminate, a printed wiring board, a semiconductor package, an electronic device, and a printed wiring board.

印刷配線基板以及半導體封裝基板的電路形成方法中,減成方法為主流,但由於近年來配線的進一步微細化,M-SAP(Modified Semi-Additive Process)、或使用金屬箔的表面輪廓的半加成方法等新方法開始盛行。 In the circuit formation method of printed wiring substrates and semiconductor package substrates, the subtraction method is the mainstream. However, due to the further miniaturization of wiring in recent years, M-SAP (Modified Semi-Additive Process) or a semi-additive surface profile using metal foil New methods such as success methods are beginning to prevail.

這些新穎的電路形成方法中,作為後者的使用金屬箔的表面輪廓的半加成方法的一例,可以列舉如下方法。即,首先,對積層在樹脂基材的金屬箔的整個面進行蝕刻,利用雷射等對轉印有金屬箔表面輪廓的蝕刻基材面進行開孔,並施加用來導通開孔部的無電解鍍銅層,利用乾膜覆蓋無電解鍍銅表面,藉由UV曝光及顯影將電路形成部的乾膜去除,對未被乾膜覆蓋的無電解鍍銅面實施電解鍍銅並將乾膜剝離,最後利用含有硫酸、雙氧水的蝕刻液等對無電解鍍銅層進行蝕刻(急速蝕刻、快速蝕刻),由此形成微細電路(專利文獻1、專利文獻2)。 Among these novel circuit formation methods, as an example of the latter semi-additive method using a surface profile of a metal foil, the following method can be cited. That is, first, the entire surface of the metal foil laminated on the resin substrate is etched, and the surface of the etched substrate on which the surface contour of the metal foil is transferred is opened with a laser or the like. The electrolytic copper plating layer covers the surface of the electroless copper plating with a dry film, removes the dry film of the circuit forming portion by UV exposure and development, performs electrolytic copper plating on the non-electrolytic copper plating surface not covered by the dry film, and dries the dry film. After peeling off, the electroless copper plating layer is etched (rapid etching, rapid etching) with an etching solution containing sulfuric acid, hydrogen peroxide, or the like, thereby forming a fine circuit (Patent Document 1, Patent Document 2).

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2006-196863號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2006-196863

[專利文獻2]日本特開2007-242975號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2007-242975

然而,在低成本地製造具有微細電路的印刷配線板方面,現有的使用金屬箔的表面輪廓的半加成方法尚有研究的餘地。 However, in terms of manufacturing printed wiring boards with fine circuits at low cost, there is still room for research on the existing semi-additive method using a surface profile of metal foil.

本發明人等努力進行研究,結果金屬箔的面的凹凸狀態得到控制。另外,在與上述凹凸狀態得到控制的面為相反側的金屬箔之面設置脫模層,而能實現將上述金屬箔貼合在樹脂基材時的樹脂基材的物理剝離。而且發現,藉由按以下方式使用上述金屬箔,能夠低成本地製造具有微細電路的印刷配線板。即,在將上述金屬箔的具有脫模層的面側貼合在樹脂基材之後,在上述凹凸狀態得到控制的金屬箔之面形成電路。然後,以將電路埋入的方式在形成有電路的金屬箔的面積層樹脂。隨後將金屬箔從樹脂基材剝離,去除金屬箔而露出上述電路,由此,發現能夠通低成本地製造具有微細電路的印刷配線板。 As a result of diligent research, the present inventors have controlled the uneven state of the surface of the metal foil. In addition, a release layer is provided on the surface of the metal foil on the opposite side to the surface whose unevenness is controlled, so that physical peeling of the resin substrate when the metal foil is bonded to the resin substrate can be achieved. Furthermore, it was found that by using the above-mentioned metal foil, a printed wiring board having a fine circuit can be manufactured at low cost. That is, after the surface side of the metal foil having a release layer is bonded to a resin substrate, a circuit is formed on the surface of the metal foil whose uneven state is controlled. Then, a resin is embedded in the area of the metal foil on which the circuit is formed so as to embed the circuit. Subsequently, the metal foil was peeled from the resin substrate, and the metal foil was removed to expose the above-mentioned circuit. As a result, it was found that a printed wiring board having a fine circuit can be manufactured at a low cost.

以上述見解為基礎而完成的本發明的一方面為一種附脫模層金屬箔,其具備:具有第一面及第二面且上述第一面的均方根高度Sq為0.01μm以上且1μm以下的金屬箔、以及設置在上述金屬箔的第二面的脫模層。 One aspect of the present invention completed based on the above findings is a metal foil with a release layer, which includes a first surface and a second surface, and a root mean square height Sq of the first surface is 0.01 μm or more and 1 μm The following metal foil and a release layer provided on the second surface of the metal foil.

在本發明的附脫模層金屬箔的一實施方式中,上述金屬箔的上述第二面之均方根高度Sq為0.25μm以上且1.6μm以下。 In one embodiment of the metal foil with a release layer of the present invention, the root mean square height Sq of the second surface of the metal foil is 0.25 μm or more and 1.6 μm or less.

本發明的附脫模層金屬箔在另一實施方式中具有上述金屬箔的 第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下的表面凹凸。 In another embodiment, the metal foil with a release layer of the present invention has a surface having a ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of irregularities of 0.03 or more and 0.40 or less. Bump.

在本發明的附脫模層金屬箔的又一實施方式中,上述金屬箔的厚度為1μm以上且105μm以下。 In another embodiment of the metal foil with a mold release layer of this invention, the thickness of the said metal foil is 1 micrometer or more and 105 micrometers or less.

在本發明的附脫模層金屬箔的又一實施方式中,上述金屬箔為銅箔。 In another embodiment of the metal foil with a mold release layer of this invention, the said metal foil is a copper foil.

在本發明的附脫模層金屬箔的又一實施方式中,在上述金屬箔的第一面、及/或上述金屬箔與上述脫模層之間設置有選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層。 In still another embodiment of the metal foil with a release layer according to the present invention, a first member selected from a roughening treatment layer and a heat-resistant layer is provided between the first surface of the metal foil and / or the metal foil and the release layer. One or more of the group consisting of a rust-proof layer, a chromate-treated layer, and a silane coupling-treated layer.

在本發明的附脫模層金屬箔的又一實施方式中,於設置在上述金屬箔的第一面的上述選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層設置有樹脂層。 In another embodiment of the metal foil with a release layer of the present invention, the above-mentioned provided on the first surface of the metal foil is selected from the group consisting of a roughened layer, a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane. One or more layers in the group consisting of the coupling treatment layers are provided with a resin layer.

在本發明的附脫模層金屬箔的又一實施方式中,上述樹脂層為接著用樹脂、底漆或半硬化狀態的樹脂。 In still another embodiment of the metal foil with a release layer according to the present invention, the resin layer is a resin, a primer, or a semi-cured resin.

在本發明的附脫模層金屬箔的又一實施方式中,上述脫模層包含至少1種或2種以上的下述化合物,上述化合物選自由下述化學式所表示的鋁酸鹽化合物、鈦酸鹽化合物、鋯酸鹽化合物、鋁酸鹽化合物的水解產物、鈦酸鹽化合物的水解產物、鋯酸鹽化合物的水解產物、鋁酸鹽化合物的水解產物的縮合物、鈦酸鹽化合物的水解產物的縮合物以及鋯酸鹽化合物的水解產物的縮合物所組成的群中,(R1)m-M-(R2)n In another embodiment of the metal foil with a release layer of the present invention, the release layer includes at least one or two or more of the following compounds selected from the group consisting of an aluminate compound and titanium represented by the following chemical formula: Salt compounds, zirconate compounds, hydrolysates of aluminate compounds, hydrolysates of titanate compounds, hydrolysates of zirconate compounds, condensation products of hydrolysates of aluminate compounds, hydrolysis of titanate compounds In the group consisting of the condensate of the product and the condensate of the hydrolyzate of the zirconate compound, (R 1 ) m -M- (R 2 ) n

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成 的群中的烴基、或上述烴基的一個以上的氫原子被鹵素原子所取代的烴基,M為Al、Ti、Zr中的任一個,n為0、1或2,m為1以上且M的價數以下的整數,R1中的至少一個為烷氧基;m+n為M的價數;M的價數在Al的情況下為3,在Ti、Zr的情況下為4)。 (In the formula, R 1 is an alkoxy group or a halogen atom, and R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms of the above hydrocarbon group are replaced by a halogen atom. Hydrocarbon group, M is any one of Al, Ti, Zr, n is 0, 1, or 2, m is an integer of 1 or more and M or less, and at least one of R 1 is an alkoxy group; m + n Is the valence of M; the valence of M is 3 in the case of Al and 4) in the case of Ti and Zr.

在本發明的附脫模層金屬箔的又一實施方式中,上述脫模層包含至少1種或2種以上的下述化合物,上述化合物選自由下述化學式所表示的矽烷化合物、上述矽烷化合物的水解產物以及上述水解產物的縮合物所組成的群中, In another embodiment of the metal foil with a release layer of the present invention, the release layer includes at least one or two or more of the following compounds selected from the group consisting of a silane compound represented by the following chemical formula, and the silane compound In the group consisting of

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成的群中的烴基、或上述烴基的一個以上的氫原子被鹵素原子所取代的烴基,R3及R4分別獨立地為鹵素原子、烷氧基、選自由烷基、環烷基及芳基所組成的群中的上述烴基或上述烴基的一個以上的氫原子被鹵素原子所取代的烴基)。 (In the formula, R 1 is an alkoxy group or a halogen atom, and R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms of the above hydrocarbon group are replaced by a halogen atom. R 3 and R 4 are each independently a halogen atom, an alkoxy group, one or more of the above-mentioned hydrocarbon group or one or more hydrogen atoms of the above-mentioned hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group are halogen atoms. Substituted hydrocarbyl).

在本發明的附脫模層金屬箔的又一實施方式中,上述脫模層是使用分子內具有2個以下的巰基的化合物而成。 In another embodiment of the metal foil with a mold release layer of this invention, the said mold release layer is a compound using the compound which has two or less mercapto groups in a molecule | numerator.

在本發明的附脫模層金屬箔的又一實施方式中,在上述脫模層表面設置有樹脂層。 In another embodiment of the metal foil with a mold release layer of this invention, the resin layer is provided in the surface of the said mold release layer.

在本發明的附脫模層金屬箔的又一實施方式中,上述樹脂層為接著用樹脂、底漆或半硬化狀態的樹脂。 In still another embodiment of the metal foil with a release layer according to the present invention, the resin layer is a resin, a primer, or a semi-cured resin.

本發明的另一方面為一種金屬箔,其具有第一面及第二面,且上述第一面的均方根高度Sq為0.01μm以上且1μm以下。 Another aspect of the present invention is a metal foil having a first surface and a second surface, and the root mean square height Sq of the first surface is 0.01 μm or more and 1 μm or less.

在本發明的金屬箔的一實施方式中,上述第二面的均方根高度Sq為0.25μm以上且1.6μm以下。 In one embodiment of the metal foil of the present invention, the root mean square height Sq of the second surface is 0.25 μm or more and 1.6 μm or less.

本發明的金屬箔的另一實施方式中,具有上述金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下的表面凹凸。 In another embodiment of the metal foil of the present invention, the ratio (Sq / Rsm) of the root-mean-square height Sq of the second surface of the metal foil to the average interval Rsm of irregularities is 0.03 or more and 0.40 or less.

在本發明的金屬箔的又一實施方式中,上述金屬箔的厚度為1μm以上且105μm以下。 In another embodiment of the metal foil of this invention, the thickness of the said metal foil is 1 micrometer or more and 105 micrometers or less.

在本發明的金屬箔的又一實施方式中,上述金屬箔為銅箔。 In another embodiment of the metal foil of this invention, the said metal foil is a copper foil.

在本發明的金屬箔的又一實施方式中,在上述金屬箔的第一面、及/或上述金屬箔的第二面設置有選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層。 In still another embodiment of the metal foil of the present invention, the first surface of the metal foil and / or the second surface of the metal foil is provided with a member selected from a roughened layer, a heat-resistant layer, a rust-proof layer, and chromic acid. One or more layers in the group consisting of a salt-treated layer and a silane coupling-treated layer.

在本發明的金屬箔的又一實施方式中,於設置在上述金屬箔的第一面的上述選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層設置有樹脂層。 In still another embodiment of the metal foil of the present invention, the above-mentioned provided on the first surface of the metal foil is selected from the group consisting of a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer. One or more layers in the composed group are provided with a resin layer.

本發明的又一方面為一種積層體,其具備本發明的附脫模層金屬箔或本發明的金屬箔、及設置在上述附脫模層金屬箔或上述金屬箔的樹脂基材。 Still another aspect of the present invention is a laminated body including the metal foil with a release layer of the present invention or the metal foil of the present invention, and a resin substrate provided on the metal foil with the release layer or the metal foil.

在本發明的積層體的一實施方式中,上述樹脂基材為預浸料、或者、包含熱硬化性樹脂。 In one Embodiment of the laminated body of this invention, the said resin base material is a prepreg, or contains a thermosetting resin.

本發明的又一方面為一種印刷配線板,其具備本發明的附脫模層金屬箔或本發明的金屬箔。 Another aspect of this invention is a printed wiring board provided with the metal foil with a mold release layer of this invention, or the metal foil of this invention.

本發明的又一方面為一種半導體封裝,其具備本發明的印刷配線板。 Another aspect of the present invention is a semiconductor package including the printed wiring board of the present invention.

本發明的又一方面為一種電子機器,其具備本發明的印刷配線 板或本發明的半導體封裝。 Another aspect of the present invention is an electronic device including the printed wiring board of the present invention or the semiconductor package of the present invention.

本發明的又一方面為一種印刷配線板的製造方法,包括以下步驟:在本發明的附脫模層金屬箔或本發明的金屬箔貼合絕緣基板;藉由將上述附脫模層金屬箔或上述金屬箔在不被蝕刻的情況下從上述絕緣基板剝離,而獲得在剝離面轉印有上述附脫模層金屬箔或上述金屬箔的表面輪廓的絕緣基板;及在上述轉印有表面輪廓的絕緣基板的上述剝離面側形成電路。 Another aspect of the present invention is a method for manufacturing a printed wiring board, comprising the steps of: bonding an insulating substrate to the metal foil with a release layer of the present invention or the metal foil of the present invention; Or the metal foil is peeled from the insulating substrate without being etched, and an insulating substrate having the surface profile of the metal foil with a release layer or the metal foil transferred to a peeling surface is obtained; and the surface is transferred to the surface A circuit is formed on the peeling surface side of the contoured insulating substrate.

在本發明的印刷配線板的製造方法的一實施方式中,在上述轉印有表面輪廓的絕緣基板的上述剝離面側形成的電路為鍍敷圖案或印刷圖案。 In one embodiment of the method for manufacturing a printed wiring board according to the present invention, the circuit formed on the peeling surface side of the insulating substrate to which the surface contour is transferred is a plating pattern or a printed pattern.

本發明的又一方面為一種印刷配線板的製造方法,包括以下步驟:在本發明的附脫模層金屬箔或本發明的金屬箔貼合絕緣基板;藉由將上述附脫模層金屬箔或上述金屬箔在不被蝕刻的情況下從上述絕緣基板剝離,而獲得在剝離面轉印有上述附脫模層金屬箔或上述金屬箔的表面輪廓的絕緣基板;及在上述轉印有表面輪廓的絕緣基板的上述剝離面側設置增層。 Another aspect of the present invention is a method for manufacturing a printed wiring board, comprising the steps of: bonding an insulating substrate to the metal foil with a release layer of the present invention or the metal foil of the present invention; Or the metal foil is peeled from the insulating substrate without being etched, and an insulating substrate having the surface profile of the metal foil with a release layer or the metal foil transferred to a peeling surface is obtained; and the surface is transferred to the surface A build-up layer is provided on the peeling surface side of the contoured insulating substrate.

在本發明的印刷配線板的製造方法的一實施方式中,構成上述增層的樹脂包含液晶聚合物、氟樹脂、低介電常數聚醯亞胺、聚苯醚、環烯烴聚合物或聚四氟乙烯。 In one embodiment of the method for manufacturing a printed wiring board of the present invention, the resin constituting the build-up layer includes a liquid crystal polymer, a fluororesin, a low dielectric constant polyfluorene imide, a polyphenylene ether, a cycloolefin polymer, or polytetramethylene. Fluoroethylene.

本發明的又一方面為一種印刷配線板的製造方法,包括以下步驟:在本發明的附脫模層金屬箔或本發明的金屬箔,從上述脫模層側或上述金屬箔的第二面側貼合絕緣基板1;在積層有上述絕緣基板1的上述附脫模層金屬箔或上述金屬箔的第一面側形成電路;藉由利用絕緣基板2覆蓋上述電路而將上述電路埋入上述絕緣基板2;從上述附脫模層金屬箔或上述金屬箔將上述絕緣基板1剝離而露出上述附脫模層金屬箔或上述金屬箔;及將上述露出的附脫模層金屬箔或上述金屬箔去除。 Another aspect of the present invention is a method for manufacturing a printed wiring board, comprising the steps of: in the metal foil with a release layer of the present invention or the metal foil of the present invention, from the release layer side or the second surface of the metal foil An insulating substrate 1 is bonded to the side; a circuit is formed on the first surface side of the metal foil with the release layer or the metal foil laminated with the insulating substrate 1; the circuit is buried in the circuit by covering the circuit with the insulating substrate 2 Insulating substrate 2; peeling off the insulating substrate 1 from the release-layer-attached metal foil or the metal foil to expose the release-layer-attached metal foil or the metal foil; and exposing the exposed release-layer-attached metal foil or the metal Remove the foil.

本發明的又一方面為一種印刷配線板的製造方法,包括以下步 驟:在本發明的附脫模層金屬箔或本發明的金屬箔,從上述脫模層側或上述金屬箔的第二面側貼合絕緣基板1;在積層有上述絕緣基板1的附脫模層金屬箔或上述金屬箔的第一面側積層乾膜;將上述乾膜圖案化之後,形成電路; 將上述乾膜剝離而露出上述電路;藉由利用絕緣基板2覆蓋上述露出的電路而將上述電路埋入上述絕緣基板2;從上述附脫模層金屬箔或上述金屬箔將上述絕緣基板1剝離而露出上述附脫模層金屬箔或上述金屬箔;及將上述露出的附脫模層金屬箔或上述金屬箔去除。 Another aspect of the present invention is a method for manufacturing a printed wiring board, comprising the steps of: in the metal foil with a release layer of the present invention or the metal foil of the present invention, from the release layer side or the second surface of the metal foil Laminate the insulating substrate 1 on the side; laminate the dry film on the first side of the metal foil with the release layer of the insulating substrate 1 or the first surface of the metal foil; pattern the dry film to form a circuit; peel the dry film The circuit is exposed; the circuit is buried in the insulating substrate 2 by covering the exposed circuit with the insulating substrate 2; the insulating substrate 1 is peeled from the metal foil with a release layer or the metal foil to expose the adhesion The mold layer metal foil or the metal foil; and removing the exposed metal foil with the release layer or the metal foil.

藉由控制金屬箔表面的凹凸狀態、以及提供“在金屬箔設置脫模層而能實現將上述金屬箔貼合在樹脂基材時的樹脂基材的物理剝離的金屬箔”,能夠低成本地製造具有微細電路的印刷配線板。 By controlling the unevenness of the surface of the metal foil, and by providing "a metal foil that can physically peel off the resin substrate when the metal foil is bonded to the resin substrate by providing a release layer on the metal foil", it is possible to reduce the cost. Manufacture of printed wiring boards with fine circuits.

圖1A~C是使用本發明的附脫模層銅箔的印刷配線板的製造方法的具體例中,電路鍍敷、阻劑去除為止的步驟中的配線板剖面的示意圖。 1A to 1C are schematic diagrams of a cross section of a wiring board in a specific example of a method for manufacturing a printed wiring board using a copper foil with a release layer according to the present invention, in steps from circuit plating and resist removal.

圖2D~F是使用本發明的附脫模層銅箔的印刷配線板的製造方法的具體例中,從樹脂以及第2層附脫模層銅箔積層到雷射開孔為止的步驟中的配線板剖面的示意圖。 FIGS. 2D to F are steps in a specific example of a method for manufacturing a printed wiring board using a copper foil with a release layer according to the present invention, from the step of laminating a resin and a second copper foil with a release layer to a laser opening; Schematic diagram of cross section of wiring board.

圖3G~I是使用本發明的附脫模層銅箔的印刷配線板的製造方法的具體例中,從填孔形成到第1層脫模層剝離為止的步驟中的配線板剖面的示意圖。 3G to I are schematic diagrams of a cross-section of a wiring board in a specific example of a method for manufacturing a printed wiring board using a copper foil with a release layer according to the present invention, in a step from filling a hole to peeling of a first release layer.

圖4J~K是使用本發明的附脫模層銅箔的印刷配線板的製造方法的具體例中,從急速蝕刻到凸塊-銅柱形成為止的步驟中的配線板剖面的示意圖。 4J to K are schematic diagrams of cross-sections of a wiring board in a specific example of a method for manufacturing a printed wiring board using the release layer copper foil with the present invention, from rapid etching to formation of bumps and copper pillars.

圖5是表示使用銅箔輪廓的半加成方法的示意圖。 FIG. 5 is a schematic diagram showing a semi-additive method using a copper foil profile.

(金屬箔) (Metal foil)

本發明的金屬箔為具有第一面及第二面且上述第一面側的表面的均方根高度Sq為0.01μm以上且1μm以下的金屬箔。藉由這樣控制第一面的均方根高度Sq來控制金屬箔表面的凹凸狀態。而且,藉由按以下方式使用上述金屬箔,能夠低成本地製造具有微細電路的印刷配線板。即,在與上述凹凸狀態得到控制的面為相反側的金屬箔的面設置脫模層,能實現將上述金屬箔貼合在樹脂基材時的樹脂基材的物理剝離。接下來,在將上述金屬箔的具有脫模層的面側貼合在樹脂基材之後,在上述表面凹凸狀態得到控制的金屬箔之面形成電路。然後,以將電路埋入的方式在形成有電路的金屬箔表面積層樹脂。隨後,將金屬箔從樹脂基材剝離,去除金屬箔而露出上述電路,由此,能夠製造印刷配線板。當利用上述方法製造印刷配線板時,能夠在不藉由無電解鍍敷將無電解鍍敷層設置在樹脂基板上的情況下形成電路。因此,能降低印刷配線板的製造成本。而且,藉由將上述電路埋入樹脂中而使電路得到保護。因此,在藉由蝕刻等將金屬箔去除時,電路不容易因蝕刻等而被浸蝕。因此,能夠形成微細電路。 The metal foil of this invention is a metal foil which has a 1st surface and a 2nd surface, and the root-mean-square height Sq of the surface of the said 1st surface side is 0.01 micrometer or more and 1 micrometer or less. By controlling the root mean square height Sq of the first surface in this way, the uneven state of the surface of the metal foil is controlled. In addition, by using the metal foil described below, a printed wiring board having a fine circuit can be manufactured at low cost. That is, a mold release layer is provided on the surface of the metal foil on the opposite side to the surface whose unevenness is controlled, so that the resin substrate can be physically peeled when the metal foil is bonded to the resin substrate. Next, a circuit is formed on the surface of the metal foil whose surface unevenness is controlled after the surface side of the metal foil having a release layer is bonded to a resin substrate. Then, a resin is layered on the metal foil surface area on which the circuit is formed so as to embed the circuit. Subsequently, the metal foil is peeled from the resin base material, and the metal foil is removed to expose the above-mentioned circuit, whereby a printed wiring board can be manufactured. When a printed wiring board is manufactured by the above method, a circuit can be formed without providing an electroless plating layer on a resin substrate by electroless plating. Therefore, the manufacturing cost of a printed wiring board can be reduced. Furthermore, the circuit is protected by burying the circuit in a resin. Therefore, when the metal foil is removed by etching or the like, the circuit is not easily etched by the etching or the like. Therefore, a fine circuit can be formed.

另外,在金屬箔表面設置有粗化處理層、耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層、脫模層等表面處理層時,本說明書中所謂「金屬箔的第一面」以及「金屬箔的第二面」是指設置上述表面處理層後的表面(最外層的表面)。另外,在本說明書中,「第一面」也稱為「一面」,「第二面」也稱為「另一面」。 In addition, when a surface treatment layer such as a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a chromate treatment layer, a silane coupling treatment layer, and a release layer is provided on the surface of a metal foil, the so-called "first The "surface" and the "second surface of the metal foil" refer to the surface (the surface of the outermost layer) after the surface treatment layer is provided. In the present specification, the "first side" is also referred to as "one side", and the "second side" is also referred to as "the other side".

本發明的金屬箔因為第一面的均方根高度Sq為0.01μm以上,所以與上述電路或埋入有電路的樹脂的密合性良好。結果減少了電路或埋入有電 路的樹脂從金屬箔剝離或脫落的情況。而且,本發明的金屬箔因為第一面的均方根高度Sq為1μm以下,所以電路形成性良好。 Since the root-mean-square height Sq of the first surface of the metal foil of the present invention is 0.01 μm or more, the metal foil has good adhesion to the above-mentioned circuit or a resin embedded in the circuit. As a result, peeling or peeling of the circuit or the resin embedded in the circuit from the metal foil is reduced. In addition, the metal foil of the present invention has good circuit formability because the root mean square height Sq of the first surface is 1 μm or less.

當在金屬箔的第一面均方根高度Sq小於0.01μm時,有時金屬箔的面的凹凸偏差過小。因此,有金屬箔與上述電路或埋入有電路的樹脂的密合性變差的情況。結果有電路或埋入有電路的樹脂從金屬箔剝離或脫落的情況。此外,當在金屬箔的第一面均方根高度Sq超過1μm時,有時金屬箔的面的凹凸偏差過大。結果有如下情況:在金屬箔的面的凸部較大的部分,去除金屬箔時必須進行更長時間的蝕刻等。結果有如下情況:蝕刻等導致的電路的浸蝕增大,配線形成性變差。金屬箔的第一面的均方根高度Sq較佳為0.95μm以下,較佳為0.93μm以下,較佳為0.90μm以下,較佳為0.85μm以下,較佳為0.80μm以下,較佳為0.75μm以下,較佳為0.70μm以下,較佳為0.68μm以下,較佳為0.67μm以下,較佳為0.65μm以下,較佳為0.60μm以下,較佳為0.55μm以下,較佳為0.50μm以下,較佳為0.45μm以下,較佳為0.40μm以下,較佳為0.35μm以下,較佳為0.32μm以下,較佳為0.30μm以下,較佳為0.25μm以下,較佳為0.24μm以下,較佳為0.22μm以下,較佳為0.20μm以下,較佳為0.19μm以下,較佳為0.18μm以下,較佳為0.17μm以下,更佳為0.15μm以下。金屬箔的第一面的均方根高度Sq較佳為0.015μm以上,較佳為0.02μm以上,較佳為0.025μm以上,較佳為0.03μm以上,較佳為0.035μm以上,較佳為0.04μm以上,較佳為0.045μm以上,更佳為0.05μm以上。 When the root-mean-square height Sq of the first surface of the metal foil is less than 0.01 μm, the unevenness of the unevenness of the surface of the metal foil may be too small. Therefore, the adhesion of the metal foil to the circuit or the resin in which the circuit is embedded may be deteriorated. As a result, the circuit or the resin embedded in the circuit may be peeled off or peeled off from the metal foil. When the root-mean-square height Sq of the first surface of the metal foil exceeds 1 μm, the unevenness of the surface of the metal foil may be excessively large. As a result, in a portion where the convex portion on the surface of the metal foil is large, it is necessary to perform etching or the like for a longer time when removing the metal foil. As a result, there is a case where the erosion of the circuit due to etching or the like increases, and the wiring formability is deteriorated. The root-mean-square height Sq of the first surface of the metal foil is preferably 0.95 μm or less, preferably 0.93 μm or less, preferably 0.90 μm or less, preferably 0.85 μm or less, more preferably 0.80 μm or less, and more preferably 0.75 μm or less, preferably 0.70 μm or less, preferably 0.68 μm or less, preferably 0.67 μm or less, preferably 0.65 μm or less, preferably 0.60 μm or less, preferably 0.55 μm or less, preferably 0.50 μm or less, preferably 0.45 μm or less, preferably 0.40 μm or less, preferably 0.35 μm or less, preferably 0.32 μm or less, preferably 0.30 μm or less, preferably 0.25 μm or less, preferably 0.24 μm Hereinafter, it is preferably 0.22 μm or less, preferably 0.20 μm or less, preferably 0.19 μm or less, more preferably 0.18 μm or less, more preferably 0.17 μm or less, and even more preferably 0.15 μm or less. The root-mean-square height Sq of the first surface of the metal foil is preferably 0.015 μm or more, preferably 0.02 μm or more, preferably 0.025 μm or more, preferably 0.03 μm or more, preferably 0.035 μm or more, and more preferably 0.04 μm or more, preferably 0.045 μm or more, and more preferably 0.05 μm or more.

金屬箔的第二面的均方根高度Sq較佳為0.25μm以上且1.6μm以下。因為金屬箔的第二面的均方根高度Sq為0.25~1.6μm,所以能夠保持將金屬箔與樹脂基材貼合後的剝離性良好,並且電路、樹脂或增層等積層部件因轉印到剝離金屬箔後的樹脂基材表面的凹凸形狀而無空隙(或空隙極小)地跟隨上述樹脂基材表面,密合性良好地將電路、樹脂或增層等積層部件設置在樹脂 基材表面。 The root mean square height Sq of the second surface of the metal foil is preferably 0.25 μm or more and 1.6 μm or less. Since the root-mean-square height Sq of the second surface of the metal foil is 0.25 to 1.6 μm, the peelability after the metal foil is bonded to the resin substrate can be maintained, and multilayer components such as circuits, resins, or buildups are transferred due to transfer. The concave-convex shape on the surface of the resin substrate after peeling the metal foil follows the surface of the resin substrate without voids (or extremely small voids), and the laminated components such as circuits, resins, or buildups are provided on the surface of the resin substrate with good adhesion. .

如果金屬箔的第二面的均方根高度Sq小於0.25μm,則會有產生如下問題的擔憂,即,將金屬箔與樹脂基材貼合後剝離金屬箔而獲得的樹脂基材表面的凹凸較小,與不同樹脂的密合性變得不充分,如果超過1.6μm,會有產生如下問題的擔憂,即,將金屬箔與樹脂基材貼合後剝離金屬箔時的剝離性變差,而且剝離金屬箔後的樹脂基材表面的凹凸形狀過深,電路、樹脂或增層等積層部件未追隨上述凹凸形狀。均方根高度Sq較佳為0.30~1.4μm,更佳為0.4~1.0μm,更佳為0.4~0.96μm。 If the root-mean-square height Sq of the second surface of the metal foil is less than 0.25 μm, there is a concern that the surface roughness of the resin substrate obtained by bonding the metal foil to the resin substrate and peeling off the metal foil may cause a problem. If it is small, the adhesiveness with different resins becomes insufficient, and if it exceeds 1.6 μm, there is a concern that the peelability when the metal foil is peeled off after the metal foil is bonded to the resin substrate may be deteriorated. In addition, the uneven shape on the surface of the resin substrate after the metal foil is peeled off is too deep, and the laminated component such as a circuit, a resin, or a buildup does not follow the above uneven shape. The root-mean-square height Sq is preferably 0.30 to 1.4 μm, more preferably 0.4 to 1.0 μm, and even more preferably 0.4 to 0.96 μm.

金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)較佳為0.03以上且0.40以下。因為金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下,所以能夠保持將金屬箔與樹脂基材貼合後的剝離性良好,並且電路、樹脂或增層等積層部件因轉印到剝離金屬箔後的樹脂基材表面的凹凸形狀而無空隙(或空隙極小)地進行跟隨,密合性良好地將電路、樹脂或增層等積層部件設置在樹脂基材表面。 The ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness is preferably 0.03 or more and 0.40 or less. Since the ratio (Sq / Rsm) of the root-mean-square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness is 0.03 or more and 0.40 or less, the peelability after bonding the metal foil to the resin substrate is good. And the laminated components such as circuits, resins, or buildups follow the uneven shape of the surface of the resin substrate after the metal foil is peeled off, and follow without voids (or very small voids), and the circuit, resin or Laminated members such as layers are provided on the surface of the resin substrate.

如果金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)小於0.03,則會產生如下問題:將金屬箔與樹脂基材貼合後剝離金屬箔而獲得的樹脂基材表面的凹凸較小,樹脂基材與電路、樹脂或增層等積層部件的密合性變得不充分,如果超過0.40,則會產生如下問題:將金屬箔與樹脂基材貼合後剝離金屬箔時的剝離性變差,而且剝離金屬箔後的樹脂基材表面的凹凸形狀過深,電路、樹脂或增層等積層部件未追隨上述凹凸形狀。金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)較佳為0.05以上,更佳為0.10以上。金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)較佳為0.25以下,較佳為0.24以下,更佳為0.20以下。 If the ratio (Sq / Rsm) of the root-mean-square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness is less than 0.03, a problem arises that the metal foil is peeled off after the metal foil is bonded to the resin substrate to obtain The unevenness of the surface of the resin substrate is small, and the adhesion between the resin substrate and the laminated components such as the circuit, resin, or buildup becomes insufficient. If it exceeds 0.40, the following problem may occur: the metal foil and the resin substrate are stuck. The peelability when the metal foil is peeled after the bonding is deteriorated, and the uneven shape on the surface of the resin substrate after the metal foil is peeled off is too deep, and the laminated member such as a circuit, resin, or buildup does not follow the uneven shape. The ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness is preferably 0.05 or more, and more preferably 0.10 or more. The ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of irregularities is preferably 0.25 or less, more preferably 0.24 or less, and even more preferably 0.20 or less.

(附脫模層金屬箔) (With release layer metal foil)

本發明的附脫模層金屬箔具備金屬箔及脫模層,上述金屬箔具有第一面及第二面,且上述第一面的均方根高度Sq為0.01μm以上且1μm以下,上述脫模層為設置在上述金屬箔的第二面側的脫模層,且使將樹脂基材貼合在上述金屬箔時的上述樹脂基材能夠從上述脫模層側剝離。藉由這樣控制第一面的均方根高度Sq來控制金屬箔表面的凹凸狀態。而且,在與上述凹凸狀態得到控制的面為相反側的金屬箔的面設置脫模層而能實現將上述金屬箔貼合在樹脂基材時的樹脂基材的物理剝離。而且,藉由按以下方式使用上述金屬箔,能夠低成本地製造具有微細電路的印刷配線板。即,在將上述金屬箔的具有脫模層的面側貼合在樹脂基材之後,在上述表面凹凸狀態得到控制的金屬箔之面形成電路。然後,以將電路埋入的方式在形成有電路的金屬箔表面積層樹脂。隨後,將金屬箔從樹脂基材剝離,去除金屬箔而露出上述電路,由此,能夠製造印刷配線板。當利用上述方法製造印刷配線板時,能夠在不藉由無電解鍍敷將無電解鍍敷層設置在樹脂基板上的情況下形成電路。因此,能降低印刷配線板的製造成本。而且,藉由將上述電路埋入樹脂中而使電路得到保護。因此,在藉由蝕刻等將金屬箔去除時,電路不容易因蝕刻等而被浸蝕。因此,能夠形成微細電路。 The metal foil with a release layer of the present invention includes a metal foil and a release layer, the metal foil has a first surface and a second surface, and a root mean square height Sq of the first surface is 0.01 μm or more and 1 μm or less. The mold layer is a release layer provided on the second surface side of the metal foil, and the resin substrate can be peeled from the release layer side when a resin substrate is bonded to the metal foil. By controlling the root mean square height Sq of the first surface in this way, the uneven state of the surface of the metal foil is controlled. In addition, a release layer is provided on the surface of the metal foil on the opposite side to the surface whose unevenness is controlled, so that the resin substrate can be physically peeled when the metal foil is bonded to the resin substrate. In addition, by using the metal foil described below, a printed wiring board having a fine circuit can be manufactured at low cost. That is, after the surface side of the metal foil having a release layer is bonded to a resin substrate, a circuit is formed on the surface of the metal foil whose surface unevenness state is controlled. Then, a resin is layered on the metal foil surface area on which the circuit is formed so as to embed the circuit. Subsequently, the metal foil is peeled from the resin base material, and the metal foil is removed to expose the above-mentioned circuit, whereby a printed wiring board can be manufactured. When a printed wiring board is manufactured by the above method, a circuit can be formed without providing an electroless plating layer on a resin substrate by electroless plating. Therefore, the manufacturing cost of a printed wiring board can be reduced. Furthermore, the circuit is protected by burying the circuit in a resin. Therefore, when the metal foil is removed by etching or the like, the circuit is not easily etched by the etching or the like. Therefore, a fine circuit can be formed.

附脫模層金屬箔的金屬箔因未形成脫模層的一側的面即第一面的均方根高度Sq為0.01μm以上,所以與上述電路或埋入有電路的樹脂的密合性良好。結果減少了電路或埋入有電路的樹脂從金屬箔剝離或脫落的情況。而且,金屬箔因未形成脫模層的一側的面即第一面的均方根高度Sq為1μm以下,所以電路形成性良好。 Since the metal foil with the release layer metal foil has a root-mean-square height Sq of the first surface that is the side on which the release layer is not formed is 0.01 μm or more, the adhesion to the above-mentioned circuit or the resin embedded in the circuit is excellent. good. As a result, the occurrence of peeling or peeling of the circuit or the resin embedded in the circuit from the metal foil is reduced. In addition, since the metal foil has a root-mean-square height Sq of the first surface that is the side on which the release layer is not formed is 1 μm or less, the circuit formability is good.

如果在金屬箔的未形成脫模層的一側的面即第一面均方根高度Sq小於0.01μm,則會有金屬箔的面的凹凸偏差過小的情況。當金屬箔的面的凹 凸偏差過小時,有助於金屬箔與電路的密合性、或金屬箔與電路或埋入有電路的樹脂的密合性的高凸部或深凹部有時會減少,因此,金屬箔與上述電路或埋入有電路的樹脂的密合性有時會變差。結果有電路或埋入有電路的樹脂從金屬箔剝離或脫落的情況。此外,如果在金屬箔的未形成脫模層的一側的面即第一面均方根高度Sq超過1μm,則會有金屬箔的面的凹凸偏差過大的情況。結果有如下情況:在金屬箔的面之凸部較大的部分,去除金屬箔時必須進行更長時間的蝕刻等。結果有如下情況:蝕刻等導致的電路的浸蝕增大,配線形成性變差。未形成脫模層的一側的面即第一面的均方根高度Sq較佳為0.95μm以下,較佳為0.93μm以下,較佳為0.90μm以下,較佳為0.85μm以下,較佳為0.80μm以下,較佳為0.75μm以下,較佳為0.70μm以下,較佳為0.68μm以下,較佳為0.67μm以下,較佳為0.65μm以下,較佳為0.60μm以下,較佳為0.55μm以下,較佳為0.50μm以下,較佳為0.45μm以下,較佳為0.40μm以下,較佳為0.35μm以下,較佳為0.32μm以下,較佳為0.30μm以下,較佳為0.25μm以下,較佳為0.24μm以下,較佳為0.22μm以下,較佳為0.20μm以下,較佳為0.19μm以下,較佳為0.18μm以下,較佳為0.17μm以下,更佳為0.15μm以下。未形成脫模層的一側的面即第一面的均方根高度Sq較佳為0.015μm以上,較佳為0.02μm以上,較佳為0.025μm以上,較佳為0.03μm以上,較佳為0.035μm以上,較佳為0.04μm以上,較佳為0.045μm以上,更佳為0.05μm以上。 If the first surface root-mean-square height Sq of the surface of the metal foil on which the release layer is not formed is less than 0.01 μm, the unevenness of the surface of the metal foil may be too small. When the unevenness of the surface of the metal foil is too small, high convex portions or deep concave portions that contribute to the adhesion between the metal foil and the circuit or the adhesion between the metal foil and the circuit or the resin in which the circuit is embedded may decrease. Therefore, the adhesion of the metal foil to the above-mentioned circuit or the resin in which the circuit is embedded may be deteriorated. As a result, the circuit or the resin embedded in the circuit may be peeled off or peeled off from the metal foil. In addition, if the first surface root-mean-square height Sq on the side of the metal foil on which the release layer is not formed exceeds 1 μm, the unevenness of the surface of the metal foil may be excessively large. As a result, in a part where the convex portion on the surface of the metal foil is large, it is necessary to perform etching for a longer time when removing the metal foil. As a result, there is a case where the erosion of the circuit due to etching or the like increases, and the wiring formability is deteriorated. The root-mean-square height Sq of the surface on the side where the mold release layer is not formed, that is, the first surface, is preferably 0.95 μm or less, preferably 0.93 μm or less, preferably 0.90 μm or less, preferably 0.85 μm or less, and more preferably 0.80 μm or less, preferably 0.75 μm or less, preferably 0.70 μm or less, preferably 0.68 μm or less, preferably 0.67 μm or less, preferably 0.65 μm or less, preferably 0.60 μm or less, preferably 0.55 μm or less, preferably 0.50 μm or less, preferably 0.45 μm or less, preferably 0.40 μm or less, preferably 0.35 μm or less, preferably 0.32 μm or less, preferably 0.30 μm or less, preferably 0.25 μm or less, preferably 0.24 μm or less, preferably 0.22 μm or less, preferably 0.20 μm or less, preferably 0.19 μm or less, preferably 0.18 μm or less, preferably 0.17 μm or less, more preferably 0.15 μm the following. The root-mean-square height Sq of the surface on the side where the mold release layer is not formed, that is, the first surface, is preferably 0.015 μm or more, preferably 0.02 μm or more, preferably 0.025 μm or more, preferably 0.03 μm or more, and more preferably It is 0.035 μm or more, preferably 0.04 μm or more, preferably 0.045 μm or more, and more preferably 0.05 μm or more.

金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq較佳為0.25μm以上且1.6μm以下。因為金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq為0.25~1.6μm,所以能夠保持將金屬箔與樹脂基材貼合後的剝離性良好,並且電路、樹脂或增層等積層部件因轉印到剝離金屬箔後的樹脂基材表面的凹凸形狀而無空隙(或空隙極小)地跟隨上述樹脂基材表面,密合性良好地將電路、樹脂或增層等積層部件設置在樹脂基材表面。 The root mean square height Sq of the second surface of the metal foil on which the release layer is formed is preferably 0.25 μm or more and 1.6 μm or less. Since the root-mean-square height Sq of the second surface of the metal foil on which the release layer is formed is 0.25 to 1.6 μm, the peelability after bonding the metal foil to the resin substrate is maintained, and the circuit is maintained. Laminated components such as resin, buildup, etc. follow the surface of the resin substrate without voids (or very small voids) due to the uneven shape on the surface of the resin substrate after the metal foil is peeled off. The circuit, resin or Laminated members such as build-up are provided on the surface of the resin substrate.

如果金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq小於0.25μm,則會有產生如下問題的擔憂,即,將金屬箔與樹脂基材貼合後剝離金屬箔而獲得的樹脂基材表面的凹凸較小,與不同樹脂的密合性變得不充分,如果超過1.6μm,則會有產生如下問題的擔憂,即,將金屬箔與樹脂基材貼合後剝離金屬箔時的剝離性變差,而且剝離金屬箔後的樹脂基材表面的凹凸形狀過深,電路、樹脂或增層等積層部件未追隨上述凹凸形狀。均方根高度Sq較佳為0.30~1.4μm,更佳為0.4~1.0μm,更佳為0.4~0.96μm。 If the root-mean-square height Sq of the second surface of the metal foil on which the release layer is formed is less than 0.25 μm, there is a concern that the metal foil and the resin substrate are peeled after being bonded together. The unevenness of the surface of the resin substrate obtained by the metal foil is small, and the adhesiveness with different resins becomes insufficient. If it exceeds 1.6 μm, there is a concern that the metal foil and the resin substrate are stuck together. The peelability when the metal foil is peeled after the bonding is deteriorated, and the uneven shape on the surface of the resin substrate after the metal foil is peeled off is too deep, and the laminated member such as a circuit, resin, or buildup does not follow the uneven shape. The root-mean-square height Sq is preferably 0.30 to 1.4 μm, more preferably 0.4 to 1.0 μm, and even more preferably 0.4 to 0.96 μm.

金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)較佳為0.03以上且0.40以下。因為金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下,所以能夠保持將金屬箔與樹脂基材貼合後的剝離性良好,並且電路、樹脂或增層等積層部件因轉印到剝離金屬箔後的樹脂基材表面的凹凸形狀而無空隙(或空隙極小)地進行跟隨,密合性良好地將電路、樹脂或增層等積層部件設置在樹脂基材表面。 The ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil on which the release layer is formed to the average interval Rsm of the unevenness on the second surface (Sq / Rsm) is preferably 0.03 or more and 0.40 or less. Since the ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil on the side on which the release layer is formed to the average interval Rsm of the unevenness is 0.03 or more and 0.40 or less, the metal foil can be maintained. The peelability after bonding to the resin substrate is good, and laminated components such as circuits, resins, or buildups follow the uneven shape of the resin substrate surface after the metal foil is peeled off, and follow without voids (or very small voids). Laminated components such as circuits, resins, and buildups are provided on the surface of a resin substrate with good adhesion.

如果金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)小於0.03,則會產生如下問題:將金屬箔與樹脂基材貼合後剝離金屬箔而獲得的樹脂基材表面的凹凸較小,樹脂基材與電路、樹脂或增層等積層部件的密合性變得不充分,如果超過0.40,則會產生如下問題:將金屬箔與樹脂基材貼合後剝離金屬箔時的剝離性變差,而且剝離金屬箔後的樹脂基材表面的凹凸形狀過深,電路、樹脂或增層等積層部件未追隨上述凹凸形狀。金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)較佳為0.05以上,更佳為0.10以上。金屬箔的形成有脫模層的一側的面即第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)較佳為0.25以下,較佳為0.24以下,更佳為0.20以 下。 If the ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil on which the release layer is formed, that is, the second surface, to the average interval Rsm of irregularities (Sq / Rsm) is less than 0.03, the following problem arises: The unevenness of the surface of the resin substrate obtained by peeling the metal foil after bonding the resin substrate is small, and the adhesion between the resin substrate and the laminated components such as the circuit, resin, or buildup becomes insufficient. If it exceeds 0.40, it will cause The following problems: the peelability when the metal foil is peeled off after the metal foil is bonded to the resin substrate, and the uneven shape on the surface of the resin substrate after the metal foil is peeled is too deep, and the laminated components such as circuits, resins, or buildups are not followed The above uneven shape. The ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil on which the release layer is formed to the average interval Rsm of the unevenness of the second surface (Sq / Rsm) is preferably 0.05 or more, and more preferably 0.10 or more. The ratio (Sq / Rsm) of the root-mean-square height Sq of the second surface of the metal foil on which the release layer is formed to the average interval Rsm of the unevenness of the second surface is preferably 0.25 or less, more preferably 0.24 or less, and more preferably It is 0.20 or less.

金屬箔(也稱為生箔)並無特別限定,可以使用銅箔、鋁箔、鎳箔、銅合金箔、鎳合金箔、鋁合金箔、不銹鋼箔、鐵箔、鐵合金箔、鋅箔、鋅合金箔、鈷箔、鈷合金箔等。此外,可以使用眾所周知的金屬箔作為金屬箔。 The metal foil (also called green foil) is not particularly limited, and copper foil, aluminum foil, nickel foil, copper alloy foil, nickel alloy foil, aluminum alloy foil, stainless steel foil, iron foil, iron alloy foil, zinc foil, and zinc alloy can be used. Foil, cobalt foil, cobalt alloy foil, etc. In addition, a well-known metal foil can be used as the metal foil.

金屬箔(生箔)的厚度並無特別限定,例如,能設為1~105μm、或3~105μm、或5~105μm。另外,就容易從樹脂基材剝離的方面而言,金屬箔的厚度較佳為9~70μm,更佳為12~35μm,進而較佳為18~35μm。另外,就容易藉由蝕刻等將金屬箔(生箔)去除的觀點而言,較佳為金屬箔厚度較薄。例如,金屬箔的厚度較佳為105μm以下,較佳為70μm以下,較佳為35μm以下,較佳為18μm以下,更佳為12μm以下。另外,就容易進行金屬箔(生箔)的處理的觀點而言,較佳為金屬箔厚度較厚。例如,金屬箔的厚度較佳為1μm以上,較佳為3μm以上。 The thickness of the metal foil (green foil) is not particularly limited. For example, it can be 1 to 105 μm, or 3 to 105 μm, or 5 to 105 μm. In addition, in terms of easy peeling from the resin substrate, the thickness of the metal foil is preferably 9 to 70 μm, more preferably 12 to 35 μm, and still more preferably 18 to 35 μm. In addition, from the viewpoint that the metal foil (green foil) can be easily removed by etching or the like, the thickness of the metal foil is preferably thin. For example, the thickness of the metal foil is preferably 105 μm or less, preferably 70 μm or less, preferably 35 μm or less, more preferably 18 μm or less, and even more preferably 12 μm or less. In addition, from the viewpoint of facilitating the processing of metal foil (green foil), it is preferable that the thickness of the metal foil is thick. For example, the thickness of the metal foil is preferably 1 μm or more, and more preferably 3 μm or more.

以下,對作為金屬箔(生箔)的示例的銅箔進行說明。金屬箔(生箔)的製造方法並無特別限定,例如可以利用下述電解條件製作電解銅箔。此外,以下的方法也能夠應用於銅箔以外的金屬箔(電解金屬箔、壓延金屬箔)。 Hereinafter, a copper foil as an example of a metal foil (green foil) will be described. The manufacturing method of a metal foil (green foil) is not specifically limited, For example, an electrolytic copper foil can be manufactured using the following electrolytic conditions. The following method can also be applied to metal foils other than copper foil (electrolytic metal foil and rolled metal foil).

<電解銅箔的製造方法> <Manufacturing method of electrolytic copper foil>

本發明的電解銅箔是從硫酸銅鍍浴中將銅電解析出至鈦或不銹鋼轉筒上而進行製造。電解條件並無特別限定,例如可以利用下述條件製作電解銅箔。 The electrolytic copper foil of the present invention is produced by electrolyzing copper from a copper sulfate plating bath onto a titanium or stainless steel drum. The electrolytic conditions are not particularly limited, and for example, an electrolytic copper foil can be produced under the following conditions.

電解液組成: Electrolyte composition:

Cu:30~190g/L Cu: 30 ~ 190g / L

H2SO4:100~400g/L H 2 SO 4 : 100 ~ 400g / L

氯化物離子(Cl-):60~200品質ppm Chloride ion (Cl -): 60 ~ 200 ppm Quality

動物膠:1~10ppm Animal glue: 1 ~ 10ppm

(視需要使用雙(3-磺丙基)二硫化物(SPS):10~100ppm) (Use bis (3-sulfopropyl) disulfide (SPS) as needed: 10 ~ 100ppm)

電解液溫度:25~80℃ Electrolyte temperature: 25 ~ 80 ℃

電解時間:10~300秒鐘(根據所析出的銅厚、電流密度進行調整) Electrolysis time: 10 ~ 300 seconds (adjusted according to the copper thickness and current density)

電流密度:50~150A/dm2 Current density: 50 ~ 150A / dm 2

電解液線速度:1.5~5m/sec Linear speed of electrolyte: 1.5 ~ 5m / sec

另外,在本說明書中,電解液、鍍敷液、矽烷偶合處理液、形成脫模層的處理所使用的液體等液體或用於表面處理的處理液的其餘部分只要未特別說明則均為水。 In addition, in this specification, liquids such as an electrolytic solution, a plating solution, a silane coupling treatment liquid, a liquid used for forming a mold release layer, or the rest of the treatment liquid used for surface treatment are water unless otherwise specified. .

此時所使用的電解轉筒的轉筒表面的均方根高度Sq為1.0μm以下,較佳為0.70μm以下。關於表面具有上述均方根高度Sq的電解轉筒,首先利用號數為P150~P2500的研磨帶對鈦或不銹鋼轉筒的表面進行研磨。此時,一面將研磨帶沿轉筒的寬度方向捲繞指定寬度並使研磨帶以指定速度朝轉筒的寬度方向移動,一面使轉筒旋轉,由此進行研磨。上述研磨時的轉筒表面的旋轉速度設為120~195m/分鐘。轉筒表面的旋轉速度是由以下數學式表示。 The root mean square height Sq of the drum surface of the electrolytic drum used at this time is 1.0 μm or less, and preferably 0.70 μm or less. Regarding the electrolytic drum having the above-mentioned root-mean-square height Sq on the surface, first the surface of the titanium or stainless steel drum is polished by using a polishing belt numbered from P150 to P2500. At this time, the grinding is performed while the grinding belt is wound around a specified width in the width direction of the drum, and the grinding belt is moved in the width direction of the drum at a specified speed, while the drum is rotated to perform grinding. The rotation speed of the drum surface during the above-mentioned polishing is set to 120 to 195 m / min. The rotation speed of the drum surface is expressed by the following mathematical formula.

轉筒表面的旋轉速度(m/分鐘)=電解轉筒每一分鐘的轉數(次/分鐘)×電解轉筒每一次旋轉的周長(m/次) Rotation speed on the surface of the drum (m / min) = revolutions per minute of the electrolytic drum (times / minute) × circumference of each revolution of the electrolytic drum (m / times)

電解轉筒每一次旋轉的周長(m/次)=電解轉筒的直徑(m)×圓周率π/1(次) Circumference length (m / times) of each rotation of electrolytic drum = diameter (m) of electrolytic drum × pi / 1 (times)

另外,研磨時間設為研磨帶的1次行程內通過轉筒表面的(寬度方向的位置的)1點的時間與行程次數的乘積。此外,上述1次行程內通過轉筒表面的1點的時間設為將研磨帶的寬度除以研磨帶在轉筒的寬度方向的移動速度所得的值。而且,所謂研磨帶的1次行程是指利用研磨帶從轉筒的軸(寬度)方向(電解銅箔的寬度方向)的一個端部至另一端部,對轉筒圓周方向的 表面進行1次研磨。即,研磨時間是由以下數學式表示。 In addition, the polishing time is the product of the time that passes one point (position in the width direction) on the surface of the drum in one stroke of the polishing belt and the number of strokes. In addition, the time to pass one point on the surface of the drum in the above-mentioned one stroke is a value obtained by dividing the width of the polishing belt by the moving speed of the polishing belt in the width direction of the drum. In addition, the so-called single stroke of the polishing tape means that the surface of the drum in the circumferential direction is performed once from one end to the other end of the shaft (width) direction (the width direction of the electrolytic copper foil) of the drum using the polishing tape. Grinding. That is, the polishing time is expressed by the following mathematical formula.

研磨時間(分鐘)=每一行程的研磨帶的寬度(cm/次)/研磨帶的移動速度(cm/分鐘)×行程次數(次) Grinding time (minutes) = width of the grinding belt (cm / time) per stroke / moving speed of the grinding belt (cm / minute) × number of strokes (times)

本發明中研磨時間為3~25分鐘,另外,本發明中在研磨時利用水潤濕轉筒表面的情況下,研磨時間設為6~25分鐘。作為上述研磨時間的運算例,例如在研磨帶寬度為10cm且將移動速度設為20cm/分鐘時,轉筒表面的1點的1次行程的研磨時間為0.5分鐘。藉由將上述時間乘以總行程次數算出上述研磨時間(例如0.5分鐘×10次行程=5分鐘)。藉由增大研磨帶的號數、及/或提高轉筒表面的旋轉速度、及/或延長研磨時間、及/或在研磨時利用水潤濕轉筒表面,能減小轉筒表面的均方根高度Sq。而且,藉由減小研磨帶的號數、及/或降低轉筒表面的旋轉速度、及/或縮短研磨時間、及/或在研磨時使轉筒表面乾燥,能增大轉筒表面的均方根高度Sq。另外,藉由延長研磨時間能減小均方根高度Sq。而且,藉由縮短研磨時間能增大均方根高度Sq。此外,上述研磨帶的號數是指用於研磨帶的研磨材料的粒度。而且,上述研磨材料的粒度是依據FEPA(Federation of European Producers of Abrasives)-standard 43-1:2006、43-2:2006。 In the present invention, the grinding time is 3 to 25 minutes. In addition, in the present invention, when the surface of the drum is wetted with water during grinding, the grinding time is set to 6 to 25 minutes. As an example of the calculation of the polishing time, for example, when the polishing belt width is 10 cm and the moving speed is 20 cm / minute, the polishing time per one stroke of one point on the surface of the drum is 0.5 minute. The polishing time is calculated by multiplying the above time by the total number of strokes (for example, 0.5 minutes × 10 strokes = 5 minutes). By increasing the number of grinding belts, and / or increasing the rotation speed of the drum surface, and / or extending the grinding time, and / or wetting the drum surface with water during grinding, the uniformity of the drum surface can be reduced. Square root height Sq. In addition, by reducing the number of polishing belts, and / or reducing the rotation speed of the drum surface, and / or shortening the grinding time, and / or drying the drum surface during grinding, the uniformity of the drum surface can be increased. Square root height Sq. In addition, the root-mean-square height Sq can be reduced by extending the polishing time. Furthermore, the root-mean-square height Sq can be increased by shortening the polishing time. In addition, the number of the said polishing tape means the particle size of the polishing material used for a polishing tape. The particle size of the above-mentioned abrasive material is based on FEPA (Federation of European Producers of Abrasives) -standard 43-1: 2006, 43-2: 2006.

而且,藉由在研磨時利用水潤濕轉筒表面能減小均方根高度Sq。而且,藉由在研磨時使轉筒表面乾燥能增大均方根高度Sq。 Moreover, the root mean square height Sq can be reduced by wetting the surface of the drum with water during grinding. Moreover, the root-mean-square height Sq can be increased by drying the surface of the drum during grinding.

另外,電解轉筒表面的均方根高度Sq能按以下方式進行測定。 The root mean square height Sq of the surface of the electrolytic drum can be measured as follows.

‧藉由使樹脂膜(聚氯乙烯)浸漬在溶劑(丙酮)中而使樹脂膜膨潤。 ‧ Swell the resin film by immersing the resin film (polyvinyl chloride) in a solvent (acetone).

‧使上述膨潤的樹脂膜接觸電解轉筒表面,在丙酮從樹脂膜揮發後將樹脂膜剝離,並收集電解轉筒表面的複製品。 ‧ The above swollen resin film was brought into contact with the surface of the electrolytic drum, and the resin film was peeled off after acetone was volatilized from the resin film, and a replica of the surface of the electrolytic drum was collected.

‧利用雷射顯微鏡對上述複製品進行測定,並測定均方根高度Sq的值。 • The above replica was measured with a laser microscope, and the root mean square height Sq was measured.

然後,將所獲得的複製品的均方根高度Sq的值設為電解轉筒表面的均方根高度Sq。 Then, the value of the root-mean-square height Sq of the obtained replica is set to the root-mean-square height Sq of the surface of the electrolytic drum.

而且,均方根高度Sq、Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)都能藉由上述電解條件進行調整。如果在上述範圍內提高電解時間(銅厚)及/或電流密度,則Sq、以及Sq/Rsm增大。另一方面,如果在上述範圍內提高氯化物離子濃度、動物膠濃度、SPS濃度及/或電解液線速度,則會有Sq以及Sq/Rsm減小的傾向。只要根據所要求的剝離性的程度、所要求的與積層部件的密合性來調節這些電解條件即可。 In addition, the ratios (Sq / Rsm) of the root mean square heights Sq, Sq and the average interval Rsm of irregularities can be adjusted by the above-mentioned electrolytic conditions. When the electrolysis time (copper thickness) and / or the current density are increased within the above range, Sq and Sq / Rsm increase. On the other hand, if the chloride ion concentration, animal gum concentration, SPS concentration, and / or electrolyte linear velocity are increased within the above range, Sq and Sq / Rsm tend to decrease. These electrolytic conditions need only be adjusted in accordance with the required degree of peelability and the required adhesion to the laminated member.

而且,也可以對金屬箔的第一面、及/或第二面進行拋光研磨等機械研磨、或蝕刻等化學研磨來調整上述Sq(這裡所說的研磨也包含增加表面的凹凸程度)。 Furthermore, the first surface and / or the second surface of the metal foil may be mechanically polished, such as polishing, or chemically polished, such as etching, to adjust the Sq (the polishing referred to herein also includes increasing the degree of unevenness on the surface).

<壓延銅箔的製造方法> <Manufacturing method of rolled copper foil>

金屬箔(生箔)可以為壓延銅箔(壓延金屬箔)。上述壓延銅箔(壓延金屬箔)能藉由控制最終冷軋時的油膜當量、及控制最終冷軋的壓延輥的Sq、以及控制最終冷軋的加工度,而將金屬箔的未形成脫模層的預定側的面即第一面、及/或供脫模層形成的預定側的面即第二面的均方根高度Sq設為1.6μm以下、1.0μm以下、0.70μm以下、及/或0.01μm以上、0.25μm以上。藉由增大最終冷軋時的油膜當量、及/或增大最終冷軋的壓延輥的Sq的值、及/或減小最終冷軋的加工度,能增大金屬箔的未形成脫模層的預定側的面即第一面、及/或供脫模層形成的預定側的面即第二面的均方根高度Sq的值。藉由減小最終冷軋時的油膜當量、及/或減小最終冷軋的壓延輥的Sq的值、及/或加大最終冷軋的加工度,能減小金屬箔的未形成脫模層的預定側的面即第一面、及/或供脫模層形成的預定側的面即第二面的均方根高度Sq的值。 The metal foil (green foil) may be a rolled copper foil (rolled metal foil). The above-mentioned rolled copper foil (rolled metal foil) can release the unformed metal foil by controlling the oil film equivalent at the time of the final cold rolling, the Sq of the calender roll at the final cold rolling, and the process degree of the final cold rolling. The root-mean-square height Sq of the first side surface of the layer on the predetermined side and / or the second side surface of the predetermined side on which the release layer is formed is 1.6 μm or less, 1.0 μm or less, 0.70 μm or less, and / Or 0.01 μm or more and 0.25 μm or more. By increasing the oil film equivalent at the time of the final cold rolling, and / or increasing the value of the Sq of the calender roll of the final cold rolling, and / or decreasing the degree of processing of the final cold rolling, the unformed release of the metal foil can be increased. The value of the root-mean-square height Sq of the surface on the predetermined side of the layer, that is, the first surface, and / or the surface on the predetermined side, on which the release layer is formed, is the second surface. By reducing the oil film equivalent at the time of final cold rolling, and / or reducing the value of Sq of the final cold rolling calender roll, and / or increasing the processing degree of the final cold rolling, it is possible to reduce the unmolded release of the metal foil. The value of the root-mean-square height Sq of the surface on the predetermined side of the layer, that is, the first surface, and / or the surface on the predetermined side, on which the release layer is formed, is the second surface.

而且,也可以在最終冷軋後對金屬箔的未形成脫模層的預定側的面即第一 面、及/或供脫模層形成的預定側的面即第二面進行拋光研磨等機械研磨、或蝕刻等化學研磨而調整上述Sq(這裡所說的研磨也包含增加表面的凹凸程度)。 In addition, after the final cold rolling, a machine such as polishing and polishing may be performed on the first side of the metal foil on which a predetermined side of the release layer is not formed, and / or the second side of the predetermined side on which the release layer is formed. The above-mentioned Sq is adjusted by chemical polishing such as polishing or etching (the polishing referred to herein also includes increasing the degree of unevenness of the surface).

接下來,對能用於本發明的脫模層進行說明。 Next, the mold release layer which can be used for this invention is demonstrated.

(1)矽烷化合物 (1) Silane compounds

藉由形成脫模層,而在將金屬箔與樹脂基材進行貼合時,適度地降低密合性,能將剝離強度調節至上述範圍,上述脫模層包含至少1種或2種以上的選自由下式所表示的矽烷化合物、矽烷化合物的水解產物及水解產物的縮合物(以下,僅記述為矽烷化合物)所組成的群中的化合物。 By forming the release layer, when the metal foil and the resin substrate are bonded, the adhesiveness is moderately reduced, and the peel strength can be adjusted to the above range. The release layer includes at least one kind or two or more kinds. A compound selected from the group consisting of a silane compound represented by the following formula, a hydrolysate of a silane compound, and a condensate of the hydrolysate (hereinafter, simply referred to as a silane compound).

式: formula:

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成的群中的烴基、或烴基的一個以上的氫原子被鹵素原子所取代的烴基,R3及R4分別獨立地為鹵素原子、烷氧基、選自由烷基、環烷基及芳基所組成的群中的烴基、或烴基的一個以上的氫原子被鹵素原子所取代的烴基)。 (In the formula, R 1 is an alkoxy group or a halogen atom, and R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms of the hydrocarbon group are replaced by a halogen atom. A hydrocarbon group, R 3 and R 4 are each independently a halogen atom, an alkoxy group, a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms of the hydrocarbon group are replaced by a halogen atom Hydrocarbon group).

上述矽烷化合物必須具有至少一個烷氧基。當不存在烷氧基而僅為選自由烷基、環烷基及芳基所組成的群中的烴基、或者由一個以上的氫原子被鹵素原子所取代的這些任一烴基構成取代基時,有過度降低樹脂基材與金屬箔的密合性的傾向。而且,上述矽烷化合物必須具有至少一個選自由烷基、環烷基及芳基所組成的群中的烴基、或一個以上的氫原子被鹵素原子所取代的這些任一烴基。原因在於:當不存在上述烴基時,有樹脂基材與金屬箔的密合 性上升的傾向。此外,烷氧基也包含一個以上的氫原子被鹵素原子所取代的烷氧基。 The silane compound must have at least one alkoxy group. When an alkoxy group is absent and only a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or a substituent composed of any of these hydrocarbon groups in which one or more hydrogen atoms are replaced by a halogen atom, There is a tendency that the adhesion between the resin substrate and the metal foil is excessively reduced. The silane compound must have at least one hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or any one of these hydrocarbon groups in which one or more hydrogen atoms are replaced by a halogen atom. The reason is that when the above-mentioned hydrocarbon group is not present, the adhesion between the resin substrate and the metal foil tends to increase. The alkoxy group also includes an alkoxy group in which one or more hydrogen atoms are replaced with a halogen atom.

在將樹脂基材與金屬箔的剝離強度調節至上述範圍的方面,上述矽烷化合物較佳為具有三個烷氧基、一個上述烴基(包含一個以上的氫原子被鹵素原子所取代的烴基)。如果用上式來說明,則R3及R4兩者均為烷氧基。 In terms of adjusting the peel strength of the resin substrate and the metal foil to the above range, the silane compound preferably has three alkoxy groups and one of the above-mentioned hydrocarbon groups (including a hydrocarbon group in which one or more hydrogen atoms are replaced by halogen atoms). When the above formula is used, both R 3 and R 4 are alkoxy groups.

作為烷氧基沒有限定,可以列舉:甲氧基、乙氧基、正或異丙氧基、正、異或第三丁氧基、正、異或新戊氧基、正己氧基、環己氧基、正庚氧基、以及正辛氧基等直鏈狀、支鏈狀、或環狀的碳數1~20、較佳為碳數1~10、更佳為碳數1~5的烷氧基。 The alkoxy group is not limited, and examples thereof include a methoxy group, an ethoxy group, an n- or isopropoxy group, an n-, iso- or third butoxy group, an n-, iso- or neopentyloxy group, an n-hexyloxy group, and cyclohexyl group. Straight-chain, branched, or cyclic carbons such as oxy, n-heptyloxy, and n-octyloxy have 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms Alkoxy.

作為鹵素原子,可以列舉:氟原子、氯原子、溴原子以及碘原子。 Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

作為烷基沒有限定,可以列舉:甲基、乙基、正或異丙基、正、異或第三丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀的碳數1~20、較佳為碳數1~10、更佳為碳數1~5的烷基。 The alkyl group is not limited, and examples include methyl, ethyl, n- or iso-propyl, n-, iso- or third butyl, n-, iso- or neopentyl, n-hexyl, n-octyl, and n-decyl. The chain or branched chain has 1 to 20 carbons, preferably 1 to 10 carbons, and more preferably 1 to 5 carbons.

作為環烷基沒有限定,可以列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7的環烷基。 The cycloalkyl group is not limited, and examples thereof include cycloalkanes having 3 to 10 carbon atoms such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl, and preferably 5 to 7 carbons. base.

作為芳基,可以列舉:苯基、經烷基取代的苯基(例:甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14的芳基。 Examples of the aryl group include a phenyl group, an alkyl-substituted phenyl group (example: tolyl group, xylyl group), 1- or 2-naphthyl group, and anthracenyl group having 6 to 20 carbon atoms, preferably 6 to 20 14 aryl.

這些烴基的一個以上的氫原子可以被鹵素原子所取代,例如能利用氟原子、氯原子、或溴原子進行取代。 One or more hydrogen atoms of these hydrocarbon groups may be substituted with a halogen atom, and for example, they may be substituted with a fluorine atom, a chlorine atom, or a bromine atom.

作為較佳的矽烷化合物的示例,可以列舉:甲基三甲氧基矽烷、乙基三甲氧基矽烷、正或異丙基三甲氧基矽烷、正、異或第三丁基三甲氧基矽烷、正、異或新戊基三甲氧基矽烷、己基三甲氧基矽烷、辛基三甲氧基矽烷、癸基三甲氧基矽烷、苯基三甲氧基矽烷;經烷基取代的苯基三甲氧基矽烷(例如對(甲基)苯基三甲氧基矽烷)、甲基三乙氧基矽烷、乙基三乙氧基矽 烷、正或異丙基三乙氧基矽烷、正、異或第三丁基三乙氧基矽烷、戊基三乙氧基矽烷、己基三乙氧基矽烷、辛基三乙氧基矽烷、癸基三乙氧基矽烷、苯基三乙氧基矽烷、經烷基取代的苯基三乙氧基矽烷(例如對(甲基)苯基三乙氧基矽烷)、(3,3,3-三氟丙基)三甲氧基矽烷、以及十三氟辛基三乙氧基矽烷、甲基三氯矽烷、二甲基二氯矽烷、三甲基氯矽烷、苯基三氯矽烷、三甲基氟矽烷、二甲基二溴矽烷、二苯基二溴矽烷、這些化合物的水解產物、以及這些化合物的水解產物的縮合物等。這些化合物中,就容易獲取的觀點而言,較佳為丙基三甲氧基矽烷、甲基三乙氧基矽烷、己基三甲氧基矽烷、苯基三乙氧基矽烷、癸基三甲氧基矽烷。 As an example of a preferable silane compound, methyl trimethoxysilane, ethyltrimethoxysilane, n- or isopropyltrimethoxysilane, n-, iso- or tributyltrimethoxysilane, n- , Isoor neopentyltrimethoxysilane, hexyltrimethoxysilane, octyltrimethoxysilane, decyltrimethoxysilane, phenyltrimethoxysilane; alkyl substituted phenyltrimethoxysilane ( E.g. p- (meth) phenyltrimethoxysilane), methyltriethoxysilane, ethyltriethoxysilane, n- or isopropyltriethoxysilane, n-, iso- or tributyltrisilane Ethoxysilane, pentyltriethoxysilane, hexyltriethoxysilane, octyltriethoxysilane, decyltriethoxysilane, phenyltriethoxysilane, alkyl-substituted benzene Triethoxysilane (e.g. p- (meth) phenyltriethoxysilane), (3,3,3-trifluoropropyl) trimethoxysilane, and tridecyloctyltriethoxysilane , Methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, phenyltrichlorosilane, trimethylfluorosilane, dimethyldibromosilane , Dibromo diphenyl Silane, hydrolysis products of these compounds, hydrolysates and condensates of these compounds, and the like. Among these compounds, from the viewpoint of easy availability, propyltrimethoxysilane, methyltriethoxysilane, hexyltrimethoxysilane, phenyltriethoxysilane, and decyltrimethoxysilane are preferred. .

在脫模層的形成步驟中,矽烷化合物能以水溶液的形態加以使用。為了提高在水中的溶解性,也可以添加甲醇或乙醇等醇。醇的添加在使用疏水性高的矽烷化合物時特別有效。矽烷化合物的水溶液是藉由進行攪拌來促進烷氧基的水解,當攪拌時間長時,水解產物的縮合得到促進。一般來說,使用經過充分的攪拌時間來進行水解及縮合的矽烷化合物時,有樹脂基材與金屬箔的剝離強度降低的傾向。因此,能夠藉由調整攪拌時間來調整剝離強度。使矽烷化合物溶解於水後的攪拌時間沒有限定,例如能設為1~100小時,典型來說能設為1~30小時。當然,也有不攪拌地使用矽烷化合物的方法。 In the step of forming the release layer, the silane compound can be used in the form of an aqueous solution. To increase the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of alcohol is particularly effective when a highly hydrophobic silane compound is used. The aqueous solution of the silane compound promotes the hydrolysis of the alkoxy group by stirring. When the stirring time is long, the condensation of the hydrolysate is promoted. In general, when a silane compound that undergoes hydrolysis and condensation after a sufficient stirring time is used, the peel strength of the resin substrate and the metal foil tends to decrease. Therefore, the peeling strength can be adjusted by adjusting the stirring time. The stirring time after dissolving the silane compound in water is not limited. For example, the stirring time can be 1 to 100 hours, and typically 1 to 30 hours. Of course, there is also a method of using a silane compound without stirring.

當矽烷化合物的水溶液中的矽烷化合物濃度高時,有金屬箔與板狀載體的剝離強度降低的傾向,能夠藉由調整矽烷化合物的濃度來調整剝離強度。矽烷化合物在水溶液中的濃度沒有限定,能設為0.01~10.0體積%,典型來說能設為0.1~5.0體積%。 When the concentration of the silane compound in the aqueous solution of the silane compound is high, the peel strength of the metal foil and the plate-shaped carrier tends to decrease, and the peel strength can be adjusted by adjusting the concentration of the silane compound. The concentration of the silane compound in the aqueous solution is not limited, but can be set to 0.01 to 10.0 vol%, typically 0.1 to 5.0 vol%.

矽烷化合物的水溶液的pH值沒有特別限制,在酸性側或鹼性側都能加以利用。例如能以3.0~10.0的範圍之pH值加以使用。就無需特意進行pH值調整的觀點而言,較佳設為中性附近即5.0~9.0的範圍的pH值,更佳設為 7.0~9.0的範圍的pH值。 The pH of the aqueous solution of the silane compound is not particularly limited, and it can be used on either the acidic side or the alkaline side. For example, it can be used at a pH in the range of 3.0 to 10.0. From the viewpoint of not requiring special pH adjustment, it is preferably set to a pH in the range of 5.0 to 9.0 near neutrality, and more preferably set to a pH in the range of 7.0 to 9.0.

(2)分子內具有2個以下的巰基的化合物 (2) Compounds having two or less mercapto groups in the molecule

脫模層是使用分子內具有2個以上的巰基的化合物構成,藉由經由上述脫模層將樹脂基材與金屬箔進行貼合,也會適度降密合性低,能調節剝離強度。 The release layer is composed of a compound having two or more mercapto groups in the molecule. By bonding the resin substrate and the metal foil through the release layer, the adhesiveness is also reduced moderately, and the peel strength can be adjusted.

但是,當使分子內具有3個以上的巰基的化合物或上述化合物的鹽介於樹脂基材與金屬箔之間而進行貼合時,並不適於降低剝離強度的目的。原因在於認為有如下情況:如果分子內存在過剩的巰基,則會因巰基彼此、或巰基與板狀載體、或巰基與金屬箔的化學反應而過剩地產生硫化物鍵、二硫化物鍵或多硫化物鍵,在樹脂基材與金屬箔之間形成牢固的三維交聯結構,由此導致剝離強度上升。在日本特開2000-196207號公報中公開了這種事例。 However, when a compound having three or more thiol groups in the molecule or a salt of the compound is bonded between the resin substrate and the metal foil, it is not suitable for the purpose of reducing the peel strength. The reason is that if there is an excess of sulfhydryl groups in the molecule, sulfide bonds, disulfide bonds, or polysulfide bonds may be excessively generated due to the chemical reaction between the thiol groups, or the thiol group and the plate-shaped support, or the thiol group and the metal foil. The sulfide bond forms a strong three-dimensional cross-linked structure between the resin substrate and the metal foil, thereby increasing the peel strength. Such an example is disclosed in Japanese Patent Laid-Open No. 2000-196207.

作為該分子內具有2個以下的巰基的化合物,可以列舉:硫醇、二硫醇、硫代羧酸或其鹽、二硫代羧酸或其鹽、硫代磺酸或其鹽、以及二硫代磺酸或其鹽,可以使用選自這些化合物中的至少一種化合物。 Examples of the compound having two or less mercapto groups in the molecule include a thiol, a dithiol, a thiocarboxylic acid or a salt thereof, a dithiocarboxylic acid or a salt thereof, a thiosulfonic acid or a salt thereof, and As the thiosulfonic acid or a salt thereof, at least one compound selected from these compounds can be used.

硫醇在分子內具有一個巰基,例如以R-SH表示。此處,R表示可以含有羥基或胺基的脂肪族系或芳香族系烴基或雜環基。 The thiol has a mercapto group in the molecule, and is represented by R-SH, for example. Here, R represents an aliphatic or aromatic hydrocarbon group or heterocyclic group which may contain a hydroxyl group or an amine group.

二硫醇在分子內具有兩個巰基,例如以R(SH)2表示。R表示可以含有羥基或胺基的脂肪族系或芳香族系烴基或雜環基。又,兩個巰基可以分別鍵結於相同的碳,也可以鍵結於相互不同的碳或氮。 Dithiol has two mercapto groups in the molecule, and is represented by R (SH) 2 , for example. R represents an aliphatic or aromatic hydrocarbon or heterocyclic group which may contain a hydroxyl group or an amine group. The two mercapto groups may be respectively bonded to the same carbon, or may be bonded to different carbons or nitrogen.

硫代羧酸是有機羧酸的羥基被巰基所取代的化合物,例如以R-CO-SH表示。R表示可以含有羥基或胺基的脂肪族系或芳香族系烴基或雜環基。又,硫代羧酸還能夠以鹽的形態加以使用。此外,還能夠使用具有兩個硫代羧酸基的化合物。 A thiocarboxylic acid is a compound in which a hydroxy group of an organic carboxylic acid is replaced with a mercapto group, and is represented by R-CO-SH, for example. R represents an aliphatic or aromatic hydrocarbon or heterocyclic group which may contain a hydroxyl group or an amine group. The thiocarboxylic acid can also be used in the form of a salt. In addition, a compound having two thiocarboxylic acid groups can also be used.

二硫代羧酸是有機羧酸的羧基中的2個氧原子被硫原子所取代的化合物,例如以R-(CS)-SH表示。R表示可以含有羥基或胺基的脂肪族系或 芳香族系烴基或雜環基。又,二硫代羧酸還能夠以鹽的形態加以使用。此外,還能夠使用具有兩個二硫代羧酸基的化合物。 A dithiocarboxylic acid is a compound in which two oxygen atoms in a carboxyl group of an organic carboxylic acid are replaced with a sulfur atom, and is represented by R- (CS) -SH, for example. R represents an aliphatic or aromatic hydrocarbon or heterocyclic group which may contain a hydroxyl group or an amine group. The dithiocarboxylic acid can also be used in the form of a salt. In addition, a compound having two dithiocarboxylic acid groups can also be used.

硫代磺酸是有機磺酸的羥基被巰基所取代的化合物,例如以R(SO2)-SH表示。R表示可以含有羥基或胺基的脂肪族系或芳香族系烴基或雜環基。又,硫代磺酸還能夠以鹽的形態加以使用。 Thiosulfonic acid is a compound in which a hydroxy group of an organic sulfonic acid is replaced with a mercapto group, and is represented by R (SO 2 ) -SH, for example. R represents an aliphatic or aromatic hydrocarbon or heterocyclic group which may contain a hydroxyl group or an amine group. The thiosulfonic acid can also be used in the form of a salt.

二硫代磺酸是有機二磺酸的兩個羥基分別被巰基所取代的化合物,例如以R-((SO2)-SH)2表示。R表示可以含有羥基或胺基的脂肪族系或芳香族系烴基或雜環基。而且,兩個硫代磺酸基可以分別鍵結於相同的碳,也可以鍵結於相互不同的碳。又,二硫代磺酸還能夠以鹽的形態加以使用。 Dithiosulfonic acid is a compound in which two hydroxyl groups of an organic disulfonic acid are respectively replaced with a mercapto group, and is represented by R-((SO 2 ) -SH) 2, for example. R represents an aliphatic or aromatic hydrocarbon or heterocyclic group which may contain a hydroxyl group or an amine group. Moreover, two thiosulfonic acid groups may be respectively bonded to the same carbon, or may be bonded to mutually different carbons. The dithiosulfonic acid can also be used in the form of a salt.

此處,作為適合作為R的脂肪族系烴基,可以列舉烷基、環烷基,這些烴基可以含有羥基及胺基中的任一個或兩個。 Here, examples of the aliphatic hydrocarbon group suitable as R include an alkyl group and a cycloalkyl group, and these hydrocarbon groups may contain either or both of a hydroxyl group and an amine group.

另外,作為烷基沒有限定,可以列舉:甲基、乙基、正或異丙基、正、異或第三丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀的碳數1~20、較佳為碳數1~10、更佳為碳數1~5的烷基。 The alkyl group is not limited, and examples thereof include methyl, ethyl, n- or iso-propyl, n-, iso- or third butyl, n-, iso-or neopentyl, n-hexyl, n-octyl, and n-decyl. The linear or branched chain is an alkyl group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.

另外,作為環烷基沒有限定,可以列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7的環烷基。 In addition, the cycloalkyl group is not limited, and examples include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, and the like having 3 to 10 carbon atoms, and preferably 5 to 7 carbon atoms. Cycloalkyl.

另外,作為適合作為R的芳香族烴基,可以列舉:苯基、經烷基取代的苯基(例如,甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14的芳基,這些烴基亦可含有羥基及胺基中的任一個或兩個。 Examples of the aromatic hydrocarbon group suitable for R include a phenyl group, an alkyl-substituted phenyl group (for example, tolyl group, xylyl group), 1- or 2-naphthyl group, and anthracenyl group. 20. The aryl group is preferably 6 to 14. These hydrocarbon groups may also contain any one or both of a hydroxyl group and an amine group.

另外,作為適合作為R的雜環基,可以列舉:咪唑、三唑、四唑、苯并咪唑、苯并三唑、噻唑、苯并噻唑,亦可含有羥基及胺基中的任一個或兩個。 In addition, examples of the heterocyclic group suitable as R include imidazole, triazole, tetrazole, benzimidazole, benzotriazole, thiazole, and benzothiazole, and they may contain either one or both of a hydroxyl group and an amino group. Each.

作為分子內具有2個以下的巰基的化合物的較佳例,可以列舉:3-巰基-1,2丙二醇、2-巰基乙醇、1,2-乙二硫醇、6-巰基-1-己醇、1- 辛硫醇、1-十二硫醇、10-羥基-1-十二硫醇、10-羧基-1-十二硫醇、10-胺基-1-十二硫醇、1-十二硫醇磺酸鈉、苯硫酚、硫代苯甲酸、4-胺基-苯硫酚、對甲苯硫醇、2,4-二甲基苯硫醇、3-巰基-1,2,4三唑、2-巰基-苯并噻唑。這些化合物中,就水溶性及廢棄物處理方面的觀點而言,較佳為3-巰基-1,2丙二醇。 Preferred examples of the compound having two or less mercapto groups in the molecule include 3-mercapto-1,2 propylene glycol, 2-mercaptoethanol, 1,2-ethanedithiol, and 6-mercapto-1-hexanol. , 1-octyl mercaptan, 1-dodecyl mercaptan, 10-hydroxy-1-dodecyl mercaptan, 10-carboxy-1-dodecyl mercaptan, 10-amino-1-dodecyl mercaptan, 1- Sodium dodecyl mercaptan sulfonate, thiophenol, thiobenzoic acid, 4-amino-thiophenol, p-toluenethiol, 2,4-dimethylbenzenethiol, 3-mercapto-1,2, 4 triazole, 2-mercapto-benzothiazole. Among these compounds, 3-mercapto-1,2 propylene glycol is preferred from the viewpoint of water solubility and waste disposal.

在脫模層的形成步驟中,分子內具有2個以下的巰基的化合物能以水溶液的形態加以使用。為了提高在水中的溶解性,也可以添加甲醇或乙醇等醇。醇的添加在使用“疏水性高的在分子內具有2個以下的巰基的化合物”時特別有效。 In the step of forming the release layer, a compound having two or less mercapto groups in the molecule can be used in the form of an aqueous solution. To increase the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of an alcohol is particularly effective when a "compound having a high hydrophobicity and having two or less mercapto groups in the molecule" is used.

當分子內具有2個以下的巰基的化合物在水溶液中的濃度高時,有樹脂基材與金屬箔的剝離強度降低的傾向,能夠藉由調整分子內具有2個以下的巰基的化合物的濃度來調整剝離強度。分子內具有2個以下的巰基的化合物在水溶液中的濃度沒有限定,能設為0.01~10.0重量%,典型來說能設為0.1~5.0重量%。 When the concentration of the compound having two or less mercapto groups in the aqueous solution is high, the peel strength of the resin substrate and the metal foil tends to decrease. The concentration of the compound having two or less mercapto groups in the molecule can be adjusted by Adjust the peel strength. The concentration of the compound having two or less mercapto groups in the molecule in the aqueous solution is not limited, but can be set to 0.01 to 10.0% by weight, typically 0.1 to 5.0% by weight.

分子內具有2個以下的巰基的化合物的水溶液的pH值沒有特別限制,在酸性側或鹼性側都能加以利用。例如能以3.0~10.0的範圍的pH值加以使用。就無需特意進行pH值調整的觀點而言,較佳設為中性附近即5.0~9.0的範圍的pH值,更佳設為7.0~9.0的範圍的pH值。 The pH value of the aqueous solution of a compound having two or less mercapto groups in the molecule is not particularly limited, and it can be used on either the acidic side or the basic side. For example, it can be used at pH values in the range of 3.0 to 10.0. From the viewpoint of not requiring special pH adjustment, it is preferably set to a pH in the range of 5.0 to 9.0 near neutrality, and more preferably set to a pH in the range of 7.0 to 9.0.

(3)金屬烷氧化物 (3) metal alkoxide

可以將脫模層設為如下構成:包含至少1種或2種以上的選自由具有下式所表示的結構的鋁酸鹽化合物、鈦酸鹽化合物、鋯酸鹽化合物、鋁酸鹽化合物的水解產物、鈦酸鹽化合物的水解產物、鋯酸鹽化合物的水解產物、鋁酸鹽化合物的水解產物的縮合物、鈦酸鹽化合物的水解產物的縮合物以及鋯酸鹽化合物的水解產物的縮合物所組成的群中的化合物的構成、或者單獨或多種地進行混 合而成的構成。以下,該水解產物的縮合物也被簡稱為金屬烷氧化物。藉由介隔該脫模層將樹脂基材與金屬箔進行貼合,密合性會適度地降低,能調節剝離強度。 The release layer may be composed of at least one type or two or more types selected from the group consisting of hydrolysis of aluminate compounds, titanate compounds, zirconate compounds, and aluminate compounds having a structure represented by the following formula: Products, hydrolysis products of titanate compounds, hydrolysis products of zirconate compounds, condensation products of hydrolysis products of aluminate compounds, condensation products of hydrolysis products of titanate compounds, and condensation products of hydrolysis products of zirconate compounds The structure of the compound in the formed group, or a structure obtained by mixing one or more kinds. Hereinafter, the condensate of this hydrolysate is also simply referred to as a metal alkoxide. By bonding the resin substrate and the metal foil with the release layer interposed therebetween, the adhesiveness is moderately reduced, and the peeling strength can be adjusted.

(R1)m-M-(R2)n (R 1 ) m -M- (R 2 ) n

式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成的群中的烴基、或上述烴基的一個以上的氫原子被鹵素原子所取代的烴基,M為Al、Ti、Zr中的任一個,n為0、1或2,m為1以上且M的價數以下的整數,R1中的至少一個為烷氧基;m+n為M的價數;M的價數在Al的情況下為3,在Ti、Zr的情況下為4。 In the formula, R 1 is an alkoxy group or a halogen atom, and R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms of the hydrocarbon group are replaced by a halogen atom. Hydrocarbon group, M is any one of Al, Ti, Zr, n is 0, 1, or 2, m is an integer of 1 or more and M or less, and at least one of R 1 is an alkoxy group; m + n is The valence of M; the valence of M is 3 in the case of Al, and 4 in the case of Ti and Zr.

該金屬烷氧化物必須具有至少一個烷氧基。當不存在烷氧基而僅為選自由烷基、環烷基及芳基所組成的群中的烴基、或者由一個以上的氫原子被鹵素原子所取代的這些任一烴基構成取代基時,有樹脂基材與金屬箔的密合性過度降低的傾向。又,該金屬烷氧化物必須具有0~2個選自由烷基、環烷基及芳基所組成的群中的烴基、或一個以上的氫原子被鹵素原子所取代的這些任一烴基。原因在於:當具有3個以上的該烴基時,有樹脂基材與金屬箔的密合性過度降低的傾向。另外,烷氧基也包含一個以上的氫原子被鹵素原子所取代的烷氧基。在將樹脂基材與金屬箔的剝離強度調節至上述範圍的方面,該金屬烷氧化物較佳為具有兩個以上的烷氧基、一個或兩個上述烴基(包含一個以上的氫原子被鹵素原子所取代的烴基)。 The metal alkoxide must have at least one alkoxy group. When an alkoxy group is absent and only a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or a substituent composed of any of these hydrocarbon groups in which one or more hydrogen atoms are replaced by a halogen atom, There is a tendency that the adhesion between the resin substrate and the metal foil is excessively reduced. The metal alkoxide must have 0 to 2 hydrocarbon groups selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or any of these hydrocarbon groups in which one or more hydrogen atoms are replaced by a halogen atom. The reason is that when there are three or more such hydrocarbon groups, the adhesiveness between the resin substrate and the metal foil tends to be excessively reduced. The alkoxy group also includes an alkoxy group in which one or more hydrogen atoms are replaced with a halogen atom. In terms of adjusting the peel strength of the resin substrate and the metal foil to the above range, the metal alkoxide preferably has two or more alkoxy groups and one or two of the above-mentioned hydrocarbon groups (including one or more hydrogen atoms by halogens). Atom-substituted hydrocarbyl).

另外,作為烷基沒有限定,可以列舉:甲基、乙基、正或異丙基、正、異或第三丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀的碳數1~20、較佳為碳數1~10、更佳為碳數1~5的烷基。 The alkyl group is not limited, and examples thereof include methyl, ethyl, n- or iso-propyl, n-, iso- or third butyl, n-, iso-or neopentyl, n-hexyl, n-octyl, and n-decyl. The linear or branched chain is an alkyl group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.

另外,作為環烷基沒有限定,可以列舉:環丙基、環丁基、環 戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7的環烷基。 In addition, the cycloalkyl group is not limited, and examples include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, and the like having 3 to 10 carbon atoms, and preferably 5 to 7 carbon atoms. Cycloalkyl.

另外,作為適合作為R2的芳香族烴基,可以列舉:苯基、經烷基取代的苯基(例如,甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14的芳基,這些烴基可以含有羥基及胺基中的任一個或兩個。這些烴基的一個以上的氫原子可以被鹵素原子所取代,例如可以被氟原子、氯原子、或溴原子所取代。 Examples of the aromatic hydrocarbon group suitable as R 2 include a phenyl group, an alkyl-substituted phenyl group (for example, tolyl, xylyl), 1- or 2-naphthyl, and anthracenyl. Aryl groups of -20, preferably 6-14, these hydrocarbon groups may contain either or both of a hydroxyl group and an amine group. One or more hydrogen atoms of these hydrocarbon groups may be substituted with a halogen atom, and may be substituted with, for example, a fluorine atom, a chlorine atom, or a bromine atom.

作為較佳的鋁酸鹽化合物的示例,可以列舉:三甲氧基鋁、甲基二甲氧基鋁、乙基二甲氧基鋁、正或異丙基二甲氧基鋁、正、異或第三丁基二甲氧基鋁、正、異或新戊基二甲氧基鋁、己基二甲氧基鋁、辛基二甲氧基鋁、癸基二甲氧基鋁、苯基二甲氧基鋁;經烷基取代的苯基二甲氧基鋁(例如,對(甲基)苯基二甲氧基鋁)、二甲基甲氧基鋁、三乙氧基鋁、甲基二乙氧基鋁、乙基二乙氧基鋁、正或異丙基二乙氧基鋁、正、異或第三丁基二乙氧基鋁、戊基二乙氧基鋁、己基二乙氧基鋁、辛基二乙氧基鋁、癸基二乙氧基鋁、苯基二乙氧基鋁、經烷基取代的苯基二乙氧基鋁(例如,對(甲基)苯基二乙氧基鋁)、二甲基乙氧基鋁、三異丙氧基鋁、甲基二異丙氧基鋁、乙基二異丙氧基鋁、正或異丙基二乙氧基鋁、正、異或第三丁基二異丙氧基鋁、戊基二異丙氧基鋁、己基二異丙氧基鋁、辛基二異丙氧基鋁、癸基二異丙氧基鋁、苯基二異丙氧基鋁、經烷基取代的苯基二異丙氧基鋁(例如,對(甲基)苯基二異丙氧基鋁)、二甲基異丙氧基鋁、(3,3,3-三氟丙基)二甲氧基鋁、以及十三氟辛基二乙氧基鋁、甲基二氯化鋁、二甲基氯化鋁、二甲基氯化鋁、苯基二氯化鋁、二甲基氟化鋁、二甲基溴化鋁、二苯基溴化鋁、這些化合物的水解產物、以及這些化合物的水解產物的縮合物等。這些化合物中,就容易獲取的觀點而言,較佳為三甲氧基鋁、三乙氧基鋁、三異丙氧基鋁。 As examples of preferred aluminate compounds, trimethoxyaluminum, methyldimethoxyaluminum, ethyldimethoxyaluminum, n- or isopropyldimethoxyaluminum, n-, iso-or Third butyldimethoxyaluminum, n-, iso-or neopentyldimethoxyaluminum, hexyldimethoxyaluminum, octyldimethoxyaluminum, decyldimethoxyaluminum, phenyldimethyl Aluminum oxide; alkyl-substituted phenyldimethoxyaluminum (e.g., p- (methyl) phenyldimethoxyaluminum), dimethylaluminum, triethoxyaluminum, methyldioxy Aluminum ethoxylate, ethyl diethoxy aluminum, n- or isopropyl diethoxy aluminum, n-, iso- or third butyl diethoxy aluminum, pentyl diethoxy aluminum, hexyl diethoxy Aluminum, octyl diethoxy aluminum, decyl diethoxy aluminum, phenyl diethoxy aluminum, alkyl substituted phenyl diethoxy aluminum (e.g., p- (methyl) phenyl dieth Ethoxy aluminum), dimethyl ethoxy aluminum, triisopropoxy aluminum, methyl diisopropoxy aluminum, ethyl diisopropoxy aluminum, n- or isopropyl diethoxy aluminum, N-, i- or third butyl aluminum diisopropoxide, aluminum pentyl diisopropoxide, Aluminum diisopropoxy aluminum, octyl diisopropoxy aluminum, decyl diisopropoxy aluminum, phenyl diisopropoxy aluminum, alkyl substituted phenyl diisopropoxy aluminum (e.g., P- (methyl) phenyldiisopropoxyaluminum), dimethylisopropoxyaluminum, (3,3,3-trifluoropropyl) dimethoxyaluminum, and tridecylfluorooctyldiethyl Aluminium oxide, methyl aluminum dichloride, dimethyl aluminum chloride, dimethyl aluminum chloride, phenyl aluminum dichloride, dimethyl aluminum fluoride, dimethyl aluminum bromide, diphenyl bromide Aluminum compounds, hydrolysates of these compounds, and condensates of the hydrolysates of these compounds. Among these compounds, trimethoxyaluminum, triethoxyaluminum, and triisopropoxyaluminum are preferred from the viewpoint of easy availability.

作為較佳的鈦酸鹽化合物的示例,可以列舉:四甲氧基鈦、甲 基三甲氧基鈦、乙基三甲氧基鈦、正或異丙基三甲氧基鈦、正、異或第三丁基三甲氧基鈦、正、異或新戊基三甲氧基鈦、己基三甲氧基鈦、辛基三甲氧基鈦、癸基三甲氧基鈦、苯基三甲氧基鈦;經烷基取代的苯基三甲氧基鈦(例如,對(甲基)苯基三甲氧基鈦)、二甲基二甲氧基鈦、四乙氧基鈦、甲基三乙氧基鈦、乙基三乙氧基鈦、正或異丙基三乙氧基鈦、正、異或第三丁基三乙氧基鈦、戊基三乙氧基鈦、己基三乙氧基鈦、辛基三乙氧基鈦、癸基三乙氧基鈦、苯基三乙氧基鈦、經烷基取代的苯基三乙氧基鈦(例如,對(甲基)苯基三乙氧基鈦)、二甲基二乙氧基鈦、四異丙氧基鈦、甲基三異丙氧基鈦、乙基三異丙氧基鈦、正或異丙基三乙氧基鈦、正、異或第三丁基三異丙氧基鈦、戊基三異丙氧基鈦、己基三異丙氧基鈦、辛基三異丙氧基鈦、癸基三異丙氧基鈦、苯基三異丙氧基鈦、經烷基取代的苯基三異丙氧基鈦(例如,對(甲基)苯基三異丙氧基鈦)、二甲基二異丙氧基鈦、(3,3,3-三氟丙基)三甲氧基鈦、以及十三氟辛基三乙氧基鈦、甲基三氯化鈦、二甲基二氯化鈦、三甲基氯化鈦、苯基三氯化鈦、二甲基二氟化鈦、二甲基二溴化鈦、二苯基二溴化鈦、這些化合物的水解產物、以及這些化合物的水解產物的縮合物等。這些化合物中,就容易獲取的觀點而言,較佳為四甲氧基鈦、四乙氧基鈦、四異丙氧基鈦。 As examples of preferred titanate compounds, tetramethoxytitanium, methyltrimethoxytitanium, ethyltrimethoxytitanium, n- or isopropyltrimethoxytitanium, n-, iso-or third Butyltrimethoxytitanium, n-, iso-or neopentyltrimethoxytitanium, hexyltrimethoxytitanium, octyltrimethoxytitanium, decyltrimethoxytitanium, phenyltrimethoxytitanium; alkyl substituted Phenyltrimethoxytitanium (e.g., p- (meth) phenyltrimethoxytitanium), dimethyldimethoxytitanium, tetraethoxytitanium, methyltriethoxytitanium, ethyltriethyl Titanium oxytitanium, n- or iso-propyl triethoxy titanium, n-, iso- or tri-butyl triethoxy titanium, pentyl triethoxy titanium, hexyl triethoxy titanium, octyl triethoxy Titanium, decyltriethoxytitanium, phenyltriethoxytitanium, alkyl-substituted phenyltriethoxytitanium (e.g., p- (meth) phenyltriethoxytitanium), dimethyl Titanium diethoxy, titanium tetraisopropoxide, titanium methyl triisopropoxide, titanium ethyl triisopropoxide, titanium n- or isopropyl triethoxy, n-, iso- or third butyl Titanium triisopropoxide, pentyl titanium triisopropoxide Hexyltriisopropoxytitanium, octyltriisopropoxytitanium, decyltriisopropoxytitanium, phenyltriisopropoxytitanium, alkyl substituted phenyltriisopropoxytitanium (e.g. , P- (meth) phenyltriisopropoxytitanium), dimethyldiisopropoxytitanium, (3,3,3-trifluoropropyl) trimethoxytitanium, and tridecylfluorooctyltris Titanium ethoxylate, methyl titanium trichloride, dimethyl titanium dichloride, trimethyl titanium chloride, phenyl titanium trichloride, dimethyl titanium difluoride, dimethyl titanium dibromide, Diphenyl titanium dibromide, hydrolysis products of these compounds, and condensates of the hydrolysis products of these compounds, and the like. Among these compounds, tetramethoxytitanium, tetraethoxytitanium, and tetraisopropoxytitanium are preferred from the viewpoint of easy availability.

作為較佳的鋯酸鹽化合物的示例,可以列舉:四甲氧基鋯、甲基三甲氧基鋯、乙基三甲氧基鋯、正或異丙基三甲氧基鋯、正、異或第三丁基三甲氧基鋯、正、異或新戊基三甲氧基鋯、己基三甲氧基鋯、辛基三甲氧基鋯、癸基三甲氧基鋯、苯基三甲氧基鋯;經烷基取代的苯基三甲氧基鋯(例如,對(甲基)苯基三甲氧基鋯)、二甲基二甲氧基鋯、四乙氧基鋯、甲基三乙氧基鋯、乙基三乙氧基鋯、正或異丙基三乙氧基鋯、正、異或第三丁基三乙氧基鋯、戊基三乙氧基鋯、己基三乙氧基鋯、辛基三乙氧基鋯、癸基三乙氧基鋯、苯基三乙氧基鋯、經烷基取代的苯基三乙氧基鋯(例如,對(甲基)苯基三 乙氧基鋯)、二甲基二乙氧基鋯、四異丙氧基鋯、甲基三異丙氧基鋯、乙基三異丙氧基鋯、正或異丙基三乙氧基鋯、正、異或第三丁基三異丙氧基鋯、戊基三異丙氧基鋯、己基三異丙氧基鋯、辛基三異丙氧基鋯、癸基三異丙氧基鋯、苯基三異丙氧基鋯、經烷基取代的苯基三異丙氧基鋯(例如,對(甲基)苯基三異丙氧基鈦)、二甲基二異丙氧基鋯、(3,3,3-三氟丙基)三甲氧基鋯、以及十三氟辛基三乙氧基鋯、甲基三氯化鋯、二甲基二氯化鋯、三甲基氯化鋯、苯基三氯化鋯、二甲基二氟化鋯、二甲基二溴化鋯、二苯基二溴化鋯、這些化合物的水解產物、以及這些化合物的水解產物的縮合物等。這些化合物中,就容易獲取的觀點而言,較佳為四甲氧基鋯、四乙氧基鋯、四異丙氧基鋯。 As examples of preferred zirconate compounds, tetramethoxyzirconium, methyltrimethoxyzirconium, ethyltrimethoxyzirconium, n- or isopropyltrimethoxyzirconium, n-, iso-, or third Butyltrimethoxyzirconium, n-, iso- or neopentyltrimethoxyzirconium, hexyltrimethoxyzirconium, octyltrimethoxyzirconium, decyltrimethoxyzirconium, phenyltrimethoxyzirconium; alkyl substituted Phenyltrimethoxyzirconium (e.g., p- (methyl) phenyltrimethoxyzirconium), dimethyldimethoxyzirconium, tetraethoxyzirconium, methyltriethoxyzirconium, ethyltriethyl Zirconyloxy, n- or isopropyltriethoxyzirconium, n-, iso-or tributylzirconate, pentyltriethoxyzirconium, hexyltriethoxyzirconium, octyltriethoxy Zirconium, decyltriethoxyzirconium, phenyltriethoxyzirconium, alkyl-substituted phenyltriethoxyzirconium (e.g., p- (meth) phenyltriethoxyzirconium), dimethyl Zirconium diethoxy, zirconium tetraisopropoxide, zirconium methyl triisopropoxide, zirconium ethyl triisopropoxide, zirconium or isopropyl triethoxylate, n-, iso- or third butyl Zirconium triisopropoxide, zirconyl pentyl triisopropoxide Hexyl triisopropoxy zirconium, octyl triisopropoxy zirconium, decyl triisopropoxy zirconium, phenyl triisopropoxy zirconium, alkyl substituted phenyl triisopropoxy zirconium (e.g. , (P- (meth) phenyltriisopropoxytitanium), dimethyldiisopropoxyzirconium, (3,3,3-trifluoropropyl) trimethoxyzirconium, and tridecylfluorooctyltrioxane Zirconyl ethoxylate, methyl zirconium trichloride, dimethyl zirconium dichloride, trimethyl zirconium chloride, phenyl zirconium trichloride, dimethyl zirconium difluoride, dimethyl zirconium dibromide, Diphenyl zirconium dibromide, hydrolysis products of these compounds, and condensates of the hydrolysis products of these compounds, and the like. Among these compounds, tetramethoxyzirconium, tetraethoxyzirconium, and tetraisopropoxyzirconium are preferred from the viewpoint of easy availability.

在脫模層的形成步驟中,金屬烷氧化物能以水溶液的形態加以使用。為了提高在水中的溶解性,也可以添加甲醇或乙醇等醇類。醇類的添加在使用疏水性高的金屬烷氧化物時特別有效。 In the step of forming the release layer, the metal alkoxide can be used in the form of an aqueous solution. To increase the solubility in water, alcohols such as methanol or ethanol may be added. The addition of alcohols is particularly effective when a highly hydrophobic metal alkoxide is used.

當金屬烷氧化物在水溶液中的濃度較高時,有樹脂基材與金屬箔的剝離強度降低的傾向,能夠藉由調整金屬烷氧化物濃度來調整剝離強度。金屬烷氧化物在水溶液中的濃度沒有限定,能設為0.001~1.0mol/L,典型來說能設為0.005~0.2mol/L。 When the concentration of the metal alkoxide in the aqueous solution is high, the peel strength of the resin substrate and the metal foil tends to decrease, and the peel strength can be adjusted by adjusting the metal alkoxide concentration. The concentration of the metal alkoxide in the aqueous solution is not limited, and can be set to 0.001 to 1.0 mol / L, and typically can be set to 0.005 to 0.2 mol / L.

金屬烷氧化物的水溶液的pH值沒有特別限制,在酸性側或鹼性側都能加以利用。例如能以3.0~10.0的範圍的pH值加以使用。就無需特意進行pH值調整的觀點而言,較佳設為中性附近即5.0~9.0的範圍的pH值,更佳設為7.0~9.0的範圍的pH值。 The pH of the metal alkoxide aqueous solution is not particularly limited, and it can be used on either the acidic side or the alkaline side. For example, it can be used at pH values in the range of 3.0 to 10.0. From the viewpoint of not requiring special pH adjustment, it is preferably set to a pH in the range of 5.0 to 9.0 near neutrality, and more preferably set to a pH in the range of 7.0 to 9.0.

(4)其它 (4) Other

可以將矽系脫模劑、具有脫模性的樹脂被膜等眾所周知的具有脫模性的物質用於脫模層。 A well-known release material such as a silicon-based release agent, a resin film having a release property, and the like can be used for the release layer.

金屬箔也可以在金屬箔的第一面、及/或金屬箔的第二面、及 /或金屬箔與上述脫模層之間設置選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中的1種以上的層。這裡所謂鉻酸鹽處理層是指利用包含鉻酸酐、鉻酸、二鉻酸、鉻酸鹽或二鉻酸鹽的液體進行處理的層。鉻酸鹽處理層還可以含有鈷、鐵、鎳、鉬、鋅、鉭、銅、鋁、磷、鎢、錫、砷以及鈦等元素(也可以為金屬、合金、氧化物、氮化物、硫化物等任何形態)。作為鉻酸鹽處理層的具體例,可以列舉利用鉻酸酐或二鉻酸鉀水溶液進行過處理的鉻酸鹽處理層、或利用含有鉻酸酐或二鉻酸鉀以及鋅的處理液進行處理的鉻酸鹽處理層等。 The metal foil may be provided between the first surface of the metal foil and / or the second surface of the metal foil, and / or the metal foil and the release layer, and is selected from a roughened layer, a heat-resistant layer, a rust-proof layer, and chromium. One or more layers in the group consisting of a salt treatment layer and a silane coupling treatment layer. The chromate treatment layer herein refers to a layer treated with a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate, or dichromate. The chromate treatment layer may also contain elements such as cobalt, iron, nickel, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic, and titanium (may also be metals, alloys, oxides, nitrides, sulfurized And other forms). Specific examples of the chromate treatment layer include a chromate treatment layer treated with an aqueous solution of chromic anhydride or potassium dichromate, or chromium treated with a treatment solution containing chromic anhydride or potassium dichromate and zinc. Acid treatment layer, etc.

粗化處理層例如能藉由以下處理而形成。 The roughened layer can be formed by, for example, the following processes.

[球狀粗化] [Spherical roughening]

使用由Cu、H2SO4、As構成之下文記載的銅粗化鍍浴形成球狀粗化粒子。 Spherical roughened particles were formed using a copper roughening plating bath described below consisting of Cu, H 2 SO 4 , and As.

‧液體組成1 ‧Liquid composition 1

CuSO4‧5H2O 78~196g/L CuSO 4 ‧5H 2 O 78 ~ 196g / L

Cu 20~50g/L Cu 20 ~ 50g / L

H2SO4 50~200g/L H 2 SO 4 50 ~ 200g / L

砷0.7~3.0g/L Arsenic 0.7 ~ 3.0g / L

(電性鍍敷溫度1)30~76℃ (Electric plating temperature 1) 30 ~ 76 ℃

(電流條件1)電流密度35~105A/dm2(鍍浴的極限電流密度以上) (Current condition 1) Current density 35 ~ 105A / dm 2 (above the limiting current density of the plating bath)

(鍍敷時間1)1~240秒鐘 (Plating time 1) 1 ~ 240 seconds

然後,利用由硫酸-硫酸銅構成的銅電解浴進行覆蓋鍍敷以防止粗化粒子的脫落及提高剝離強度。將覆蓋鍍敷條件記載在下文中。 Then, a copper electrolytic bath made of sulfuric acid-copper sulfate was used for covering plating to prevent the coarse particles from falling off and to increase the peeling strength. The covering plating conditions are described below.

‧液體組成2 ‧Liquid composition 2

CuSO4‧5H2O 88~352g/L CuSO 4 ‧5H 2 O 88 ~ 352g / L

Cu 22~90g/L Cu 22 ~ 90g / L

H2SO4 50~200g/L H 2 SO 4 50 ~ 200g / L

(電性鍍敷溫度2)25~80℃ (Electrical plating temperature 2) 25 ~ 80 ℃

(電流條件2)電流密度:15~32A/dm2(小於鍍浴的極限電流密度) (Current condition 2) Current density: 15 ~ 32A / dm 2 (less than the limiting current density of the plating bath)

(鍍敷時間1)1~240秒鐘 (Plating time 1) 1 ~ 240 seconds

而且,能使用眾所周知的耐熱層、防銹層作為耐熱層、防銹層。例如,耐熱層及/或防銹層可以為包含選自由鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭所組成的群中的1種以上的元素的層,也可以為由選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭的群中的1種以上的元素構成的金屬層或合金層。又,耐熱層及/或防銹層也可以包括氧化物、氮化物、矽化物,這些氧化物、氮化物、矽化物包含選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭的群中的1種以上的元素。又,耐熱層及/或防銹層可以為包含鎳-鋅合金的層。又,耐熱層及/或防銹層也可以為鎳-鋅合金層。除了無法避免的雜質以外,上述鎳-鋅合金層可以含有50wt%~99wt%的鎳、50wt%~1wt%的鋅。上述鎳-鋅合金層的鋅以及鎳的合計附著量可以為5~1000mg/m2,較佳為10~500mg/m2,較佳為20~100mg/m2。而且,上述包含鎳-鋅合金的層或上述鎳-鋅合金層的鎳附著量與鋅附著量的比(=鎳附著量/鋅附著量)較佳為1.5~10。而且,上述包含鎳-鋅合金的層或上述鎳-鋅合金層的鎳附著量較佳為0.5mg/m2~500mg/m2,更佳為1mg/m2~50mg/m2Moreover, a well-known heat-resistant layer and a rust-proof layer can be used as a heat-resistant layer and a rust-proof layer. For example, the heat-resistant layer and / or the rust-proof layer may be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron And a layer of one or more elements in the group consisting of tantalum and tantalum may be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, A metal layer or an alloy layer composed of one or more elements of a group of silver, platinum group elements, iron, and tantalum. The heat-resistant layer and / or the rust-preventive layer may include oxides, nitrides, and silicides. These oxides, nitrides, and silicides are selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, One or more elements from the group of arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron, and tantalum. The heat-resistant layer and / or the rust preventive layer may be a layer containing a nickel-zinc alloy. The heat-resistant layer and / or the rust preventive layer may be a nickel-zinc alloy layer. In addition to unavoidable impurities, the above nickel-zinc alloy layer may contain 50 wt% to 99 wt% nickel and 50 wt% to 1 wt% zinc. The total adhesion amount of zinc and nickel in the nickel-zinc alloy layer may be 5 to 1000 mg / m 2 , preferably 10 to 500 mg / m 2 , and preferably 20 to 100 mg / m 2 . Furthermore, the ratio of the nickel adhesion amount to the zinc adhesion amount (= nickel adhesion amount / zinc adhesion amount) of the nickel-zinc alloy-containing layer or the nickel-zinc alloy layer is preferably 1.5 to 10. The nickel adhesion amount of the nickel-zinc alloy layer or the nickel-zinc alloy layer is preferably 0.5 mg / m 2 to 500 mg / m 2 , and more preferably 1 mg / m 2 to 50 mg / m 2 .

例如耐熱層及/或防銹層可以為依次積層附著量為1mg/m2~100mg/m2、較佳為5mg/m2~50mg/m2的鎳或鎳合金層、及附著量為1mg/m2~80mg/m2、較佳為5mg/m2~40mg/m2的錫層而成的耐熱層及/或防銹層,上述鎳合金層可以由鎳-鉬、鎳-鋅、鎳-鉬-鈷中的任一種所構 成。又,耐熱層及/或防銹層中鎳或鎳合金及錫的合計附著量較佳為2mg/m2~150mg/m2,更佳為10mg/m2~70mg/m2。又,耐熱層及/或防銹層較佳為〔鎳或鎳合金中的鎳附著量〕/〔錫附著量〕=0.25~10,更佳為0.33~3。 For example, the heat-resistant layer and / or the rust-proof layer may be a nickel or nickel alloy layer with an adhesion amount of 1 mg / m 2 to 100 mg / m 2 , preferably 5 mg / m 2 to 50 mg / m 2 , and an adhesion amount of 1 mg. / m 2 to 80 mg / m 2 , preferably 5 mg / m 2 to 40 mg / m 2 of a tin layer made of a heat-resistant layer and / or a rust-proof layer. The nickel alloy layer may be made of nickel-molybdenum, nickel-zinc, It is composed of any one of nickel-molybdenum-cobalt. The total adhesion amount of nickel or nickel alloy and tin in the heat-resistant layer and / or the rust-proof layer is preferably 2 mg / m 2 to 150 mg / m 2 , and more preferably 10 mg / m 2 to 70 mg / m 2 . In addition, the heat-resistant layer and / or the rust-preventive layer is preferably [the nickel adhesion amount in nickel or a nickel alloy] / [tin adhesion amount] = 0.25 to 10, and more preferably 0.33 to 3.

另外,矽烷偶合處理所使用的矽烷偶合劑可以使用眾所周知的矽烷偶合劑,例如可以使用胺基系矽烷偶合劑、環氧系矽烷偶合劑、或巰基系矽烷偶合劑。而且,矽烷偶合劑也可以使用乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、4-縮水甘油基丁基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、咪唑矽烷、三矽烷、γ-巰基丙基三甲氧基矽烷等。 In addition, as the silane coupling agent used for the silane coupling treatment, a well-known silane coupling agent can be used, and for example, an amine-based silane coupling agent, an epoxy-based silane coupling agent, or a mercapto-based silane coupling agent can be used. Furthermore, as the silane coupling agent, vinyltrimethoxysilane, vinylphenyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, and γ-glycidyloxypropyltrimethoxy may also be used. Silane, 4-glycidylbutyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-3- (4- (3-Aminopropoxy) butoxy) propyl-3-aminopropyltrimethoxysilane, imidazolane, tris Silane, γ-mercaptopropyltrimethoxysilane and the like.

上述矽烷偶合處理層可以使用環氧系矽烷、胺基系矽烷、甲基丙烯醯氧基系矽烷、巰基系矽烷等矽烷偶合劑等形成。另外,這種矽烷偶合劑可以將2種以上混合而使用。其中,較佳為使用胺基系矽烷偶合劑或環氧系矽烷偶合劑形成的矽烷偶合處理層。 The silane coupling treatment layer can be formed using a silane coupling agent such as epoxy-based silane, amine-based silane, methacryloxy-based silane, or mercapto-based silane. In addition, such a silane coupling agent may be used by mixing two or more kinds. Among these, a silane coupling treatment layer formed using an amine-based silane coupling agent or an epoxy-based silane coupling agent is preferred.

這裡所說的胺基系矽烷偶合劑可以為選自由N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、胺基丙基三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、N-(3-丙烯醯氧基-2-羥基丙基)-3-胺基丙基三乙氧基矽烷、4-胺基丁基三乙氧基矽烷、(胺基乙基胺基甲基)苯乙基三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三(2-乙基己氧基)矽烷、6-(胺基己基胺基丙基)三甲氧基矽烷、胺基苯基三甲氧基矽烷、3-(1-胺基丙氧基)-3,3-二甲基-1-丙烯基三 甲氧基矽烷、3-胺基丙基三(甲氧基乙氧基乙氧基)矽烷、3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、ω-胺基十一烷基三甲氧基矽烷、3-(2-N-苄基胺基乙基胺基丙基)三甲氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、(N,N-二乙基-3-胺基丙基)三甲氧基矽烷、(N,N-二甲基-3-胺基丙基)三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷所組成的群中的胺基系矽烷偶合劑。 The amine-based silane coupling agent mentioned here may be selected from the group consisting of N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, and 3- (N-styrylmethyl-2-amine. Ethylethylamino) propyltrimethoxysilane, 3-aminopropyltriethoxysilane, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, aminopropyl Trimethoxysilane, N-methylaminopropyltrimethoxysilane, N-phenylaminopropyltrimethoxysilane, N- (3-propenyloxy-2-hydroxypropyl) -3- Aminopropyltriethoxysilane, 4-aminobutyltriethoxysilane, (aminoethylaminomethyl) phenethyltrimethoxysilane, N- (2-aminoethyl- 3-aminopropyl) trimethoxysilane, N- (2-aminoethyl-3-aminopropyl) tri (2-ethylhexyloxy) silane, 6- (aminohexylaminopropyl) ) Trimethoxysilane, aminophenyltrimethoxysilane, 3- (1-aminopropyloxy) -3,3-dimethyl-1-propenyltrimethoxysilane, 3-aminopropyl Tris (methoxyethoxyethoxy) silane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, ω-aminoundecyltrimethoxysilane , 3- (2-N-benzyl Aminoethylaminopropyl) trimethoxysilane, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, (N, N-diethyl-3-aminopropyl) ) Trimethoxysilane, (N, N-dimethyl-3-aminopropyl) trimethoxysilane, N-methylaminopropyltrimethoxysilane, N-phenylaminopropyltrimethoxy Silane, 3- (N-styrylmethyl-2-aminoethylamino) propyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β (aminoethyl ) group consisting of γ-aminopropyltrimethoxysilane, N-3- (4- (3-aminopropyloxy) butoxy) propyl-3-aminopropyltrimethoxysilane Amine-based silane coupling agent.

矽烷偶合處理層比較理想的是以矽原子換算在0.05mg/m2~200mg/m2、較佳為0.15mg/m2~20mg/m2、較佳為0.3mg/m2~2.0mg/m2的範圍進行設置。在上述範圍的情況下,能進一步提高樹脂基材與金屬箔的密合性。 The silane coupling treatment layer is preferably 0.05 mg / m 2 to 200 mg / m 2 in terms of silicon atom conversion, preferably 0.15 mg / m 2 to 20 mg / m 2 , and preferably 0.3 mg / m 2 to 2.0 mg / m 2 is set. When it is the said range, the adhesiveness of a resin base material and a metal foil can be improved more.

而且,能對金屬箔、粗化粒子層、耐熱層、防銹層、矽烷偶合處理層、鉻酸鹽處理層或脫模層的表面進行國際公開編號WO2008/053878、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、國際公開編號WO2006/134868、日本專利第5046927號、國際公開編號WO2007/105635、日本專利第5180815號、日本特開2013-19056號中記載的表面處理。這樣一來,本發明的金屬箔還包含表面處理金屬箔。 In addition, the surface of metal foil, roughened particle layer, heat-resistant layer, rust-proof layer, silane coupling treatment layer, chromate treatment layer or release layer can be subjected to International Publication No. WO2008 / 053878, Japanese Patent Application Laid-Open No. 2008-111169 , Japanese Patent No. 5024930, International Publication No. WO2006 / 028207, Japanese Patent No. 4828427, International Publication No. WO2006 / 134868, Japanese Patent No. 5046927, International Publication No. WO2007 / 105635, Japanese Patent No. 5180815, Japanese Patent Laid-Open No. 2013 Surface treatment described in -19056. In this way, the metal foil of the present invention includes a surface-treated metal foil.

也可以在設置在金屬箔的第一面的選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中的一種以上的層的面上設置有樹脂層。 The first surface of the metal foil may be provided on one or more layers selected from the group consisting of a roughened layer, a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane coupling-treated layer. There is a resin layer.

設置在上述金屬箔的第一面的樹脂層可以為接著用樹脂、即接 著劑,亦可為底漆,亦可為接著用的半硬化狀態(B階段狀態)的絕緣樹脂層。所謂半硬化狀態(B階段狀態)包含如下狀態:即使利用手指接觸絕緣樹脂層的表面也不會有黏著感,能將上述絕緣樹脂層重疊地進行保管,如果進一步受到加熱處理,便會產生硬化反應。上述金屬箔之表面的樹脂層較佳為在與脫模層進行接觸時表現出適度的剝離強度(例如2gf/cm~200gf/cm)的樹脂層。又,較佳為使用跟隨金屬箔的表面凹凸而難以混入會導致隆起的空隙或氣泡的樹脂。例如,在金屬箔表面設置該樹脂層時,較佳為使用:樹脂黏度為10000mPa‧s(25℃)以下、更佳為樹脂黏度為5000mPa‧s(25℃)以下等低黏度樹脂,來設置樹脂層。藉由在積層在金屬箔的絕緣基板與金屬箔之間設置上述樹脂層,即使在使用難以跟隨金屬箔的表面凹凸的絕緣基板時,由於樹脂層會跟隨金屬箔表面,所以能夠使金屬箔與絕緣基板之間不容易產生空隙或氣泡,因此有效。 The resin layer provided on the first surface of the metal foil may be an adhesive resin, that is, an adhesive, a primer, or a semi-hardened (B-stage state) insulating resin layer for adhesive use. The so-called semi-hardened state (B-stage state) includes states in which even if the surface of the insulating resin layer is touched with a finger, there is no stickiness. The above-mentioned insulating resin layer can be stacked and stored. If further heat treatment is performed, hardening occurs. reaction. The resin layer on the surface of the metal foil is preferably a resin layer that exhibits a moderate peel strength (for example, 2 gf / cm to 200 gf / cm) when it comes into contact with the release layer. Furthermore, it is preferable to use a resin that follows the unevenness of the surface of the metal foil and is difficult to mix in voids or air bubbles that cause bulging. For example, when the resin layer is provided on the surface of a metal foil, it is preferable to use a resin having a low viscosity such as a resin viscosity of 10,000 mPa · s (25 ° C) or less, and more preferably a resin viscosity of 5000 mPa · s (25 ° C) or less Resin layer. By providing the above-mentioned resin layer between the insulating substrate and the metal foil of the metal foil, the resin layer can follow the surface of the metal foil even when an insulating substrate that is difficult to follow the surface irregularities of the metal foil is used. This is effective because it is difficult to generate voids or bubbles between the insulating substrates.

又,設置在上述金屬箔的第一面的樹脂層可以包含熱硬化性樹脂,也可以為熱塑性樹脂。又,上述金屬箔表面的樹脂層可以包含熱塑性樹脂。上述金屬箔表面的樹脂層亦可包含眾所周知的樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應催化劑、交聯劑、聚合物、預浸料、骨架材料等。而且,上述金屬箔表面的樹脂層例如可以使用國際公開編號WO2008/004399、國際公開編號WO2008/053878、國際公開編號WO2009/084533、日本特開平11-5828號、日本特開平11-140281號、日本專利第3184485號、國際公開編號WO97/02728、日本專利第3676375號、日本特開2000-43188號、日本專利第3612594號、日本特開2002-179772號、日本特開2002-359444號、日本特開2003-304068號、日本專利第3992225號、日本特開2003-249739號、日本專利第4136509號、日本特開2004-82687號、日本專利第4025177號、日本特開2004-349654號、日本專利第4286060號、日本特開2005 -262506號、日本專利第4570070號、日本特開2005-53218號、日本專利第3949676號、日本專利第4178415號、國際公開編號WO2004/005588、日本特開2006-257153號、日本特開2007-326923號、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、日本特開2009-67029號、國際公開編號WO2006/134868、日本專利第5046927號、日本特開2009-173017號、國際公開編號WO2007/105635、日本專利第5180815號、國際公開編號WO2008/114858、國際公開編號WO2009/008471、日本專利特開2011-14727號、國際公開編號WO2009/001850、國際公開編號WO2009/145179、國際公開編號WO2011/068157、日本特開2013-19056號中記載的物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應催化劑、交聯劑、聚合物、預浸料、骨架材料等)及/或樹脂層的形成方法、形成裝置形成。 The resin layer provided on the first surface of the metal foil may include a thermosetting resin or a thermoplastic resin. The resin layer on the surface of the metal foil may include a thermoplastic resin. The resin layer on the surface of the metal foil may include a well-known resin, a resin hardener, a compound, a hardening accelerator, a dielectric, a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton material, and the like. Further, as the resin layer on the surface of the metal foil, for example, International Publication No. WO2008 / 004399, International Publication No. WO2008 / 053878, International Publication No. WO2009 / 084533, Japanese Patent Application Laid-Open No. 11-5828, Japanese Patent Application Laid-Open No. 11-140281, and Japan Patent No. 3184485, International Publication No. WO97 / 02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open No. 2002-359444, Japanese Patent No. No. 2003-304068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003-249739, Japanese Patent No. 4136509, Japanese Patent Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Laid-Open No. 2004-349654, Japanese Patent No. 4286060, Japanese Patent Laid-Open No. 2005-262506, Japanese Patent No. 4570070, Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004 / 005588, Japanese Patent Laid-Open 2006- 257153, Japanese Patent Laid-Open No. 2007-326923, Japanese Patent Laid-Open No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006 / 028207, Japanese Patent No. 4828427 Japanese Patent Laid-Open No. 2009-67029, International Publication No. WO2006 / 134868, Japanese Patent No. 5046927, Japanese Patent Laid-Open No. 2009-173017, International Publication No. WO2007 / 105635, Japanese Patent No. 5180815, International Publication No. WO2008 / 114858, International The substances described in Publication No. WO2009 / 008471, Japanese Patent Laid-Open No. 2011-14727, International Publication No. WO2009 / 001850, International Publication No. WO2009 / 145179, International Publication No. WO2011 / 068157, and Japanese Patent Laid-Open No. 2013-19056 (resins, Resin hardeners, compounds, hardening accelerators, dielectrics, reaction catalysts, cross-linking agents, polymers, prepregs, framework materials, etc.) and / or a method for forming a resin layer and a forming apparatus.

(積層體、半導體封裝、電子機器) (Laminates, Semiconductor Packaging, Electronic Equipment)

能使附脫模層金屬箔及設置在附脫模層金屬箔的樹脂基材積層而製作積層體。該積層體可以利用紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂以及玻璃布基材環氧樹脂等形成樹脂基材。樹脂基材可以為預浸料,也可以包含熱硬化性樹脂。而且,藉由在該積層體的金屬箔形成電路,能製作印刷配線板。進而,藉由在印刷配線板搭載電子零件類,能製作印刷電路板。在本發明中,「印刷配線板」包含像這樣搭載有電子零件類的印刷配線板、印刷電路板以及印刷基板。而且,可以使用該印刷配線板製作電子機器,可以使用該搭載有電子零件類的印刷電路板製作電子機器,也可以使用上述搭載有電子零件類的印刷基板製作電子機器。而且,上述「印刷電路板」還包含半導體封裝用電路形成基板。進而,能在半導體封裝用電路形成基板搭載電子零件類而製作半 導體封裝。進而,可以使用該半導體封裝製作電子機器。 A metal foil with a release layer and a resin substrate provided on the metal foil with a release layer can be laminated to produce a laminate. The laminated body can use paper substrate phenol resin, paper substrate epoxy resin, synthetic fiber cloth substrate epoxy resin, glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven fabric composite substrate epoxy resin, and The glass cloth substrate epoxy resin and the like form a resin substrate. The resin substrate may be a prepreg or may include a thermosetting resin. Furthermore, by forming a circuit on the metal foil of this laminated body, a printed wiring board can be produced. Furthermore, by mounting electronic components on a printed wiring board, a printed wiring board can be manufactured. In the present invention, the "printed wiring board" includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components and the like are mounted. Furthermore, an electronic device may be manufactured using the printed wiring board, an electronic device may be manufactured using the printed circuit board on which electronic components are mounted, or an electronic device may be manufactured using the printed circuit board on which the electronic components are mounted. The "printed circuit board" also includes a circuit-forming substrate for a semiconductor package. Furthermore, a semiconductor package can be produced by mounting electronic components on a circuit forming substrate for a semiconductor package. Furthermore, an electronic device can be manufactured using this semiconductor package.

(印刷配線板的製造方法) (Manufacturing method of printed wiring board)

本發明的印刷配線板的製造方法的一方面具備以下步驟:在本發明的附脫模層金屬箔貼合絕緣基板;藉由將附脫模層金屬箔在不被蝕刻的情況下從絕緣基板剝離而獲得在剝離面轉印有附脫模層金屬箔之表面輪廓的絕緣基板;及在轉印有表面輪廓的絕緣基板的剝離面側形成電路。藉由這種構成,實現了將金屬箔貼合在樹脂基材時的樹脂基材的物理剝離,在將金屬箔從樹脂基材去除的步驟中,能夠在不損壞從金屬箔表面轉印到樹脂基材表面的表面輪廓的情況下,低成本地將金屬箔去除。在該製造方法中,亦可利用鍍敷圖案形成電路。在此情況下,能在形成鍍敷圖案後,利用該鍍敷圖案形成所期望的電路而製作印刷配線板。而且,也可以利用印刷圖案形成電路。在此情況下,例如能在使用油墨中含有導電膏等的噴墨形成印刷圖案後,利用該印刷圖案形成所期望的印刷電路而製作印刷配線板。 An aspect of the method for manufacturing a printed wiring board of the present invention includes the steps of: bonding an insulating substrate to the metal foil with a release layer of the present invention; and removing the metal foil with a release layer from the insulating substrate without being etched. Peeling to obtain an insulating substrate on which the surface profile of the metal foil with a release layer is transferred on the peeling surface; and forming a circuit on the peeling surface side of the insulating substrate to which the surface profile is transferred. With this configuration, the physical peeling of the resin base material when the metal foil is bonded to the resin base material is realized, and in the step of removing the metal foil from the resin base material, it is possible to transfer from the surface of the metal foil to the surface without damage. In the case of the surface profile of the surface of the resin substrate, the metal foil is removed at low cost. In this manufacturing method, a circuit may be formed using a plating pattern. In this case, after forming a plating pattern, a desired circuit can be formed using this plating pattern, and a printed wiring board can be manufactured. Furthermore, a circuit may be formed using a printed pattern. In this case, for example, after a printed pattern is formed using inkjet containing a conductive paste or the like in the ink, a desired printed circuit can be formed using the printed pattern to produce a printed wiring board.

本說明書中所謂「表面輪廓」是指表面的凹凸形狀。 The "surface profile" as used in this specification means the uneven | corrugated shape of a surface.

本發明的印刷配線板的製造方法的又一方面具備以下步驟:在本發明的附脫模層金屬箔貼合絕緣基板;藉由將附脫模層金屬箔在不被蝕刻的情況下從絕緣基板剝離而獲得在剝離面轉印有附脫模層金屬箔之表面輪廓的絕緣基板;及在轉印有表面輪廓的絕緣基板的剝離面側設置增層。藉由這種構成,實現了將金屬箔貼合在樹脂基材時的樹脂基材的物理剝離,在將金屬箔從樹脂基材去除的步驟中,能夠在不損壞轉印到樹脂基材表面的金屬箔表面的輪廓的情況下,低成本地將金屬箔去除。而且,根據轉印到樹脂基材的指定的凹凸表面,樹脂基材的樹脂成分與增層的樹脂成分可以不同也可以相同,能夠密合性良好地將兩者貼合。 Another aspect of the method for manufacturing a printed wiring board of the present invention includes the steps of: bonding an insulating substrate to the metal foil with a release layer of the present invention; and removing the metal foil with a release layer from the insulation without being etched. The substrate is peeled off to obtain an insulating substrate having a surface profile of a metal foil with a release layer transferred on the peeling surface; and an additional layer is provided on the peeling surface side of the insulating substrate having the surface profile transferred. With this configuration, the physical peeling of the resin base material when the metal foil is bonded to the resin base material is realized, and the step of removing the metal foil from the resin base material can be transferred to the surface of the resin base material without damage. In the case of a contour of the surface of the metal foil, the metal foil is removed at low cost. In addition, the resin component of the resin substrate and the resin component of the build-up layer may be different or the same depending on the predetermined uneven surface transferred to the resin substrate, and the two can be adhered with good adhesion.

這裡所謂「增層」是指具有導電層、配線圖案或電路、及樹脂 等絕緣體的層。該樹脂等絕緣體的形狀可以為層狀。而且,上述導電層、配線圖案或電路及樹脂等絕緣體無論怎樣設置均可。 The "build-up layer" herein refers to a layer having a conductive layer, a wiring pattern or a circuit, and an insulator such as a resin. The shape of the insulator such as a resin may be a layer. The conductive layers, wiring patterns, and insulators such as circuits and resins may be provided in any way.

增層能藉由在剝離面轉印有金屬箔的表面輪廓的樹脂基材的剝離面側設置導電層、配線圖案或電路及樹脂等絕緣體而製作。作為導電層、配線圖案或電路的形成方法,能使用半加成法、全加成法、減成法、部分加成法等眾所周知的方法。 The build-up layer can be produced by providing a conductive layer, a wiring pattern, an insulator such as a circuit, and a resin on the peeling surface side of the resin substrate on which the surface contour of the metal foil is transferred on the peeling surface. As a method for forming a conductive layer, a wiring pattern, or a circuit, a well-known method such as a semi-additive method, a full-additive method, a subtractive method, or a partial addition method can be used.

增層可以具有多層,也可以具有多個導電層、配線圖案或電路及樹脂(層)。 The build-up layer may have a plurality of layers, or may have a plurality of conductive layers, wiring patterns or circuits, and a resin (layer).

多個導電層、配線圖案或電路可以藉由樹脂等絕緣體而電性絕緣。可以藉由利用雷射及/或鑽孔器在樹脂等絕緣體形成通孔及/或盲孔後,在該通孔及/或盲孔形成鍍銅等導通鍍敷,而將電性絕緣的多個導電層、配線圖案或電路電性連接。 The plurality of conductive layers, wiring patterns, or circuits may be electrically insulated by an insulator such as a resin. By forming a through hole and / or a blind hole in an insulator such as a resin by using a laser and / or a drill, a conductive plating such as copper plating can be formed in the through hole and / or the blind hole, so as to electrically insulate a large amount of electricity. Each conductive layer, wiring pattern or circuit is electrically connected.

構成這種增層的樹脂等絕緣體能使用本說明書中記載的樹脂、樹脂層、樹脂基材,能使用眾所周知的樹脂、樹脂層、樹脂基材、絕緣體、預浸料、使樹脂含浸在玻璃布而成的基材等。樹脂可以包含無機物及/或有機物。又,構成增層的樹脂可以利用LCP(液晶聚合物)、氟樹脂、低介電常數聚醯亞胺、聚苯醚、環烯烴聚合物或聚四氟乙烯等具有低相對介電常數的材料形成。近年來,隨著高頻產品的增多,下述之舉動增多,即,將LCP(液晶聚合物)、氟樹脂、低介電常數聚醯亞胺、聚苯醚、環烯烴聚合物或聚四氟乙烯(特富龍:注冊商標)等具有低相對介電常數的材料摻入印刷基板的結構的舉動。此時,由於這些材料具有熱塑性,所以在熱壓加工時無法避免形狀變化,如果使用由LCP(液晶聚合物)、氟樹脂、低介電常數聚醯亞胺、聚苯醚、環烯烴聚合物或聚四氟乙烯單體構成基板,則產生生產成品率不會提高此一在基本的量產上之問題。如果使用上述本發明的製造方法,即使針對這種問題,也 能藉由使用環氧樹脂之類的熱硬化性樹脂作為樹脂基板並與之貼合,而提供高頻特性優異且能防止加熱時的形狀變形的印刷配線板。 The resin, resin layer, and resin substrate described in this specification can be used as an insulator such as a resin constituting such a layer, and a well-known resin, resin layer, resin substrate, insulator, prepreg can be used, and the resin can be impregnated into glass cloth. And the like. The resin may include an inorganic substance and / or an organic substance. In addition, as the resin constituting the build-up layer, materials having a low relative dielectric constant such as LCP (liquid crystal polymer), fluororesin, low dielectric constant polyimide, polyphenylene ether, cycloolefin polymer, or polytetrafluoroethylene can be used. form. In recent years, with the increase of high-frequency products, the following actions have increased, that is, LCP (liquid crystal polymer), fluororesin, low dielectric constant polyimide, polyphenylene ether, cycloolefin polymer or polytetramethylene A structure in which a material having a low relative dielectric constant such as vinyl fluoride (Teflon: registered trademark) is incorporated in a printed circuit board. At this time, since these materials are thermoplastic, shape changes cannot be avoided during hot pressing. If LCP (liquid crystal polymer), fluororesin, low dielectric constant polyfluorene imide, polyphenylene ether, and cycloolefin polymer are used, Or the polytetrafluoroethylene monomer constitutes the substrate, and there is a problem that the production yield does not increase this in the basic mass production. If the above-mentioned manufacturing method of the present invention is used, it is possible to provide excellent high-frequency characteristics and prevent heating by using a thermosetting resin such as epoxy resin as a resin substrate and bonding it to such a problem. Deformed printed wiring board.

本發明的印刷配線板的製造方法的又一方面是包含以下步驟的印刷配線板的製造方法:在本發明的附脫模層金屬箔或本發明的金屬箔,從上述脫模層側或上述金屬箔的第二面側貼合絕緣基板1;在積層有上述絕緣基板1的上述附脫模層金屬箔或上述金屬箔的第一面側形成電路;藉由利用絕緣基板2覆蓋上述電路而將上述電路埋入上述絕緣基板2;從上述附脫模層金屬箔或上述金屬箔將上述絕緣基板1剝離而露出上述附脫模層金屬箔或上述金屬箔;及將上述露出的附脫模層金屬箔或上述金屬箔去除。 Another aspect of the method for manufacturing a printed wiring board of the present invention is a method of manufacturing a printed wiring board including the steps of: from the release layer side metal foil of the present invention or the metal foil of the present invention, An insulating substrate 1 is bonded to the second surface side of the metal foil; a circuit is formed on the first surface side of the metal foil with the release layer or the metal foil laminated on the insulating substrate 1; and the circuit is covered by the insulating substrate 2 Burying the circuit in the insulating substrate 2; peeling the insulating substrate 1 from the metal foil with the release layer or the metal foil to expose the metal foil with the release layer or the metal foil; and releasing the exposed mold with the release The metal foil or the above-mentioned metal foil is removed.

而且,本發明的印刷配線板的製造方法的又一方面包含以下步驟:在本發明的附脫模層金屬箔或本發明的金屬箔,從上述脫模層側或上述金屬箔的第二面側貼合絕緣基板1;在積層有上述絕緣基板1的附脫模層金屬箔或上述金屬箔的第一面側積層乾膜;將上述乾膜圖案化後,形成電路;將上述乾膜剝離而露出上述電路;藉由利用絕緣基板2覆蓋上述露出的電路而將上述電路埋入上述絕緣基板2;從上述附脫模層金屬箔或上述金屬箔將上述絕緣基板1剝離而露出上述附脫模層金屬箔或上述金屬箔;及將上述露出的附脫模層金屬箔或上述金屬箔去除。 Furthermore, another aspect of the method for manufacturing a printed wiring board of the present invention includes the step of: in the metal foil with a release layer of the present invention or the metal foil of the present invention, from the release layer side or the second surface of the metal foil. Laminate the insulating substrate 1 on the side; laminate a dry film on the first side of the metal foil with a release layer or the metal foil on which the insulating substrate 1 is laminated; pattern the dry film to form a circuit; peel the dry film The circuit is exposed; the circuit is buried in the insulating substrate 2 by covering the exposed circuit with the insulating substrate 2; the insulating substrate 1 is peeled from the metal foil with a release layer or the metal foil to expose the adhesion The mold layer metal foil or the metal foil; and removing the exposed metal foil with the release layer or the metal foil.

藉由使用“像這樣在表面凹凸狀態得到控制的金屬箔設置脫模層而能實現將上述金屬箔貼合在樹脂基材時的樹脂基材的物理剝離的金屬箔”,能夠低成本地製造具有微細電路的印刷配線板。又,能實現將該金屬箔貼合在樹脂基材時的樹脂基材的物理剝離,在將金屬箔從樹脂基材去除的步驟中,能夠在不損壞轉印到樹脂基材表面的金屬箔的表面輪廓的情況下,低成本地將金屬箔去除。 It is possible to manufacture the metal foil at a low cost by providing "a metal foil in which a release layer is provided on a metal foil whose surface unevenness is controlled as described above, and the resin substrate can be physically separated when the metal foil is bonded to the resin substrate". A printed wiring board having a fine circuit. In addition, physical peeling of the resin base material when the metal foil is bonded to the resin base material can be achieved, and in the step of removing the metal foil from the resin base material, the metal foil transferred to the surface of the resin base material can be prevented from being damaged. In the case of a surface profile, the metal foil is removed at low cost.

這裡,使用圖式對使用了本發明的附脫模層金屬箔的印刷配線 板的製造方法的具體例進行詳細說明。 Here, a specific example of a method for manufacturing a printed wiring board using the release-layer-attached metal foil of the present invention will be described in detail using drawings.

首先,如圖1-A所示,準備附脫模層金屬箔(第1層),該附脫模層金屬箔(第1層)是從脫模層側積層在樹脂基板。 First, as shown in FIG. 1-A, a metal foil with a release layer (first layer) is prepared. The metal foil with a release layer (first layer) is laminated on a resin substrate from the mold release layer side.

然後,如圖1-B所示,在金屬箔上塗布阻劑並進行曝光、顯影,將阻劑蝕刻成指定形狀。 Then, as shown in FIG. 1-B, a resist is coated on the metal foil, and exposure and development are performed to etch the resist into a predetermined shape.

然後,如圖1-C所示,藉由在形成電路用鍍敷後將阻劑去除,而形成指定形狀的電路鍍敷。 Then, as shown in FIG. 1-C, the circuit is plated in a predetermined shape by removing the resist after the circuit plating is formed.

然後,如圖2-D所示,以覆蓋電路鍍敷的方式(以埋藏電路鍍敷的方式)在金屬箔上設置埋入樹脂而積層樹脂層,接下來從第1層金屬箔側接著另一附脫模層金屬箔(第2層)。 Then, as shown in Fig. 2-D, a buried resin is laminated on the metal foil so as to cover the circuit plating (by the buried circuit plating), and then the resin layer is laminated, and then from the first metal foil side, another A metal foil with a release layer (second layer).

然後,如圖2-E所示,從第2層附脫模層金屬箔剝離樹脂基板。 Then, as shown in FIG. 2-E, the resin substrate is peeled from the second layer metal foil with a release layer.

然後,如圖2-F所示,在樹脂層的指定位置進行雷射開孔,露出電路鍍敷而形成盲孔。 Then, as shown in FIG. 2-F, laser drilling is performed at a specified position of the resin layer to expose the circuit plating and form a blind hole.

然後,如圖3-G所示,在盲孔埋入銅而形成填孔。 Then, as shown in Fig. 3-G, copper is buried in the blind hole to form a filled hole.

然後,如圖3-H所示,在填孔上以上述圖1-B以及圖1-C的方式形成電路鍍敷。 Then, as shown in FIG. 3-H, a circuit plating is formed on the filled hole in the manner of FIG. 1-B and FIG. 1-C described above.

然後,如圖3-I所示,從第1層附脫模層金屬箔剝離樹脂基板。 Then, as shown in FIG. 3-I, the resin substrate was peeled from the 1st metal foil with a release layer.

然後,如圖4-J所示,藉由急速蝕刻將兩表面的金屬箔去除,露出樹脂層內的電路鍍敷的表面。 Then, as shown in FIG. 4-J, the metal foils on both surfaces are removed by rapid etching to expose the surface of the circuit plating in the resin layer.

然後,如圖4-K所示,在樹脂層內的電路鍍敷上形成凸塊,並在該焊料上形成銅柱。以這種方式製作使用了本發明的附脫模層金屬箔的印刷配線板。 Then, as shown in FIG. 4-K, bumps are formed on the circuit plating in the resin layer, and copper pillars are formed on the solder. In this way, a printed wiring board using the metal foil with a release layer of the present invention was produced.

另外,在上述印刷配線板的製造方法中,也能夠將「金屬箔」替換成樹脂基板,將「樹脂基板」替換成金屬箔地在附脫模層金屬箔的樹脂基板側表面形成電路,從而利用樹脂將電路埋入,製造印刷配線板。 In addition, in the method for manufacturing a printed wiring board described above, a circuit can be formed on the resin substrate side surface of the metal foil with a release layer by replacing the "metal foil" with a resin substrate and the "resin substrate" with a metal foil. The circuit is embedded with resin to manufacture a printed wiring board.

上述另一附脫模層金屬箔(第2層)可以使用本發明的附脫模層金屬箔,可以使用現有的附脫模層金屬箔,還可以使用通常的銅箔。而且,可以在圖3-H所示的第2層電路上再形成1層或多層電路,可以利用半加成法、減成法、部分加成法或改良型半加成法中的任一種方法形成這些電路。 As the other metal foil with a release layer (second layer), the metal foil with a release layer of the present invention can be used, and the conventional metal foil with a mold release layer can be used, and a common copper foil can also be used. Furthermore, one or more layers of circuits can be formed on the second layer circuit shown in Fig. 3-H. Any of the semi-additive method, the subtractive method, the partial additive method, or the modified semi-additive method can be used. Method to form these circuits.

根據如上述的印刷配線板的製造方法,成為電路鍍敷被埋入樹脂層中的構成,所以在例如藉由如圖4-J所示的急速蝕刻將金屬箔去除時,電路鍍敷受到樹脂層的保護,保持了電路鍍敷的形狀,由此容易形成微細電路。而且,因為電路鍍敷受到樹脂層的保護,所以耐遷移性提高,良好地抑制了電路配線的導通。因此,容易形成微細電路。而且,像圖4-J以及圖4-K所示那樣藉由急速蝕刻將金屬箔去除時,電路鍍敷的露出面成為從樹脂層凹陷的形狀,所以容易在上述電路鍍敷上形成凸塊,並進而在上述凸塊上形成銅柱,製造效率提高。 According to the method for manufacturing a printed wiring board as described above, the circuit plating is embedded in the resin layer. Therefore, when the metal foil is removed by rapid etching as shown in Fig. 4-J, the circuit plating is subjected to resin. The protection of the layer maintains the shape of the circuit plating, thereby easily forming a fine circuit. In addition, since the circuit plating is protected by the resin layer, the migration resistance is improved, and the conduction of the circuit wiring is well suppressed. Therefore, it is easy to form a fine circuit. Furthermore, when the metal foil is removed by rapid etching as shown in FIGS. 4-J and 4-K, the exposed surface of the circuit plating becomes a shape recessed from the resin layer, so it is easy to form bumps on the circuit plating. And further forming a copper pillar on the bump, the manufacturing efficiency is improved.

另外,埋入樹脂(resin)可以使用眾所周知的樹脂、預浸料。例如,可以使用BT(雙馬來醯亞胺三)樹脂或含浸BT樹脂的玻璃布即預浸料、味之素精細化學股份有限公司製造的ABF膜或ABF。而且,上述埋入樹脂(resin)可以使用本說明書中記載的樹脂層及/或樹脂及/或預浸料。 As the resin, a well-known resin or prepreg can be used. For example, BT (bismaleimide ) Resin or glass cloth impregnated with BT resin is prepreg, ABF film or ABF manufactured by Ajinomoto Fine Chemical Co., Ltd. As the resin, the resin layer and / or resin and / or prepreg described in this specification can be used.

而且,上述第一層所使用的附脫模層金屬箔可以在上述附脫模層金屬箔的表面具有基板或樹脂層。藉由具有上述基板或樹脂層,有如下優點:第一層所使用的附脫模層金屬箔受到支撐,不容易產生皺褶,所以生產性提高。另外,只要具有支撐上述第一層所使用的附脫模層金屬箔的效果,上述基板或樹脂層能使用任何基板或樹脂層。例如能使用本申請的說明書中記載的載體、預浸料、樹脂層或眾所周知的載體、預浸料、樹脂層、金屬板、金屬箔、無機化合物板、無機化合物箔、有機化合物板、有機化合物箔作為上述基板或樹脂層。 In addition, the metal foil with a release layer used for the first layer may have a substrate or a resin layer on a surface of the metal foil with a release layer. By having the above-mentioned substrate or resin layer, there is an advantage that the metal foil with a release layer used in the first layer is supported, and wrinkles are not easily generated, so productivity is improved. In addition, any substrate or resin layer can be used for the substrate or resin layer as long as it has the effect of supporting the metal foil with a release layer used in the first layer. For example, the carrier, prepreg, resin layer, or a well-known carrier, prepreg, resin layer, metal plate, metal foil, inorganic compound plate, inorganic compound foil, organic compound plate, or organic compound described in the description of the present application can be used. The foil serves as the substrate or resin layer.

此外,將使用金屬箔的表面輪廓的半加成法的示意圖示於圖5。該半加成法中使用了金屬箔的表面輪廓。具體來說,首先,從脫模層側將本發明的附脫模層金屬箔積層在樹脂基材而製作積層體。然後,利用蝕刻將積層體的金屬箔去除或剝離。然後,利用稀硫酸等將轉印有金屬箔表面輪廓的樹脂基材的表面洗淨後,實施無電解鍍銅。接下來,利用乾膜等覆蓋樹脂基材的未形成電路的部分,並對未覆蓋乾膜的無電解鍍銅層表面實施電性(電解)鍍銅。然後,在將乾膜去除後,將形成在未形成電路的部分的無電解鍍銅層去除,由此形成微細電路。本發明中所形成的微細電路與轉印有本發明的金屬箔表面輪廓的樹脂基材的剝離面密合,所以其密合力(剝離強度)良好。 A schematic diagram of the semi-additive method using the surface profile of the metal foil is shown in FIG. 5. In this semi-additive method, a surface profile of a metal foil is used. Specifically, first, the metal foil with a release layer of the present invention is laminated on a resin substrate from the release layer side to produce a laminate. Then, the metal foil of the laminated body is removed or peeled by etching. Then, the surface of the resin substrate to which the surface contour of the metal foil is transferred is washed with dilute sulfuric acid or the like, and then electroless copper plating is performed. Next, a portion of the resin substrate on which the circuit is not formed is covered with a dry film or the like, and the surface of the electroless copper plating layer not covered with the dry film is subjected to electrical (electrolytic) copper plating. Then, after the dry film is removed, the electroless copper plating layer formed on the portion where the circuit is not formed is removed, thereby forming a fine circuit. The fine circuit formed in the present invention is in close contact with the peeling surface of the resin substrate to which the surface contour of the metal foil of the present invention is transferred, so that its adhesion (peeling strength) is good.

此外,半加成法的另一實施方式如下上述。 In addition, another embodiment of the semi-additive method is as described above.

所謂半加成法是指如下方法:在樹脂基材或金屬箔上進行較薄的無電解鍍敷而形成圖案後,使用電性鍍敷以及蝕刻形成導體圖案。因此,在使用半加成法的本發明的印刷配線板的製造方法的一實施方式中包含以下步驟:準備本發明的金屬箔或本發明的附脫模層金屬箔及樹脂基材;從表面輪廓得到控制的一側或脫模層側將樹脂基材積層在上述金屬箔或上述附脫模層金屬箔;將上述金屬箔與樹脂基材積層後,利用蝕刻將上述金屬箔去除或剝離;在去除或剝離上述金屬箔而產生的樹脂基材的露出面或剝離面設置通孔或/以及盲孔;對包含上述通孔或/以及盲孔的區域進行除膠渣處理;對於上述樹脂基材以及包含上述通孔或/以及盲孔的區域,利用稀硫酸等將樹脂基材表面洗淨並設置無電解鍍敷層(例如無電解鍍銅層);在上述無電解鍍敷層上設置鍍敷阻劑;對上述鍍敷阻劑進行曝光,然後將形成有電路的區域的鍍敷阻劑去除; 在去除了上述鍍敷阻劑的形成有上述電路的區域設置電解鍍敷層(例如電解鍍銅層);將上述鍍敷阻劑去除;藉由急速蝕刻等將位於形成有上述電路的區域以外的區域的無電解鍍敷層去除。 The so-called semi-additive method refers to a method of forming a conductor pattern by using thin electroless plating on a resin substrate or metal foil to form a pattern, and then using electrical plating and etching. Therefore, one embodiment of the method for manufacturing a printed wiring board of the present invention using the semi-additive method includes the following steps: preparing the metal foil of the present invention or the metal foil with a release layer of the present invention and a resin substrate; and from the surface Laminate the resin substrate on the metal foil or the metal foil with release layer on the side whose profile is controlled or on the release layer side; after laminating the metal foil and the resin substrate, remove or peel the metal foil by etching; Through holes or / and blind holes are provided on the exposed or peeled surface of the resin substrate resulting from the removal or peeling of the metal foil; the area containing the through holes or / and the blind holes is subjected to slag removal treatment; Materials and areas containing the above-mentioned through holes or / and blind holes, the surface of the resin substrate is washed with dilute sulfuric acid, etc., and an electroless plating layer (such as an electroless copper plating layer) is provided; Plating resist; exposing the above plating resist, and then removing the plating resist in the area where the circuit is formed; providing electrolytic plating in the area where the above circuit is formed, from which the plating resist is removed (E.g., an electrolytic copper plating layer); and removing the plating resist; electroless plating region other than the region by etching or the like located rapidly formed with the cladding layer removal circuit.

使用半加成法的本發明的印刷配線板的製造方法的另一實施方式中包含以下步驟:準備本發明的金屬箔或本發明的附脫模層金屬箔及樹脂基材;從表面輪廓得到控制的一側或脫模層側將樹脂基材積層在上述金屬箔或上述附脫模層金屬箔;將上述金屬箔與樹脂基材積層後,利用蝕刻將上述金屬箔去除或剝離;對於去除或剝離上述金屬箔而產生的樹脂基材的露出面或剝離面,利用稀硫酸等將樹脂基材表面洗淨並設置無電解鍍敷層(例如無電解鍍銅層);在上述無電解鍍敷層上設置鍍敷阻劑;對上述鍍敷阻劑進行曝光,然後將形成有電路的區域的鍍敷阻劑去除;在去除了上述鍍敷阻劑的形成有上述電路的區域設置電解鍍敷層(例如電解鍍銅層);將上述鍍敷阻劑去除;藉由急速蝕刻等將位於形成有上述電路的區域以外的區域的無電解鍍敷層去除。 Another embodiment of the method for manufacturing a printed wiring board of the present invention using the semi-additive method includes the following steps: preparing the metal foil of the present invention or the metal foil with a release layer of the present invention and a resin substrate; obtained from a surface profile Laminate the resin substrate on the controlled side or the release layer side on the metal foil or the metal foil with release layer; after laminating the metal foil and the resin substrate, remove or peel the metal foil by etching; for removal Or the exposed or peeled surface of the resin substrate produced by peeling the metal foil, the surface of the resin substrate is washed with dilute sulfuric acid, etc., and an electroless plating layer (for example, an electroless copper plating layer) is provided; A plating resist is provided on the cladding layer; the plating resist is exposed, and then the plating resist in the area where the circuit is formed is removed; an electrolytic plating is provided in the area where the circuit is formed where the plating resist is removed A cladding layer (such as an electrolytic copper plating layer); removing the above-mentioned plating resist; and removing the electroless plating layer located in a region other than the region where the circuit is formed by rapid etching or the like.

這樣一來,能在剝離了金屬箔後的樹脂基材的剝離面形成電路,從而製作印刷電路形成基板、半導體封裝用電路形成基板。進而,能使用上述電路形成基板製作印刷配線板、半導體封裝。進而,能使用上述印刷配線板、半導體封裝製作電子機器。 In this way, a circuit can be formed on the peeling surface of the resin base material after the metal foil is peeled off, so that a printed circuit forming substrate and a semiconductor package circuit forming substrate can be produced. Furthermore, a printed wiring board or a semiconductor package can be produced using the circuit formation substrate. Furthermore, an electronic device can be manufactured using the printed wiring board and the semiconductor package.

另一方面,使用全加成法的本發明的印刷配線板的製造方法的另一實施方式中包含以下步驟:從表面輪廓得到控制的一側或脫模層側將樹脂基材積層在上述金屬箔或上述附脫模層金屬箔;將上述金屬箔與樹脂基材積層後,利用蝕刻將上述金屬箔去除或剝離;對於去除或剝離上述金屬箔而產生的樹脂基材的露出面或剝離面,利用稀硫酸等將樹脂基材表面洗淨;在上述洗淨的樹脂基材表面設置鍍敷阻劑;對上述鍍敷阻劑進行曝光,然後將形成有電路的區域的鍍敷阻劑去除;在去除了上述鍍敷阻劑的形成有上述電路的區域設置無電解鍍敷層(例如可以為無電解鍍銅層、具有厚度的無電解鍍敷層);將上述鍍敷阻劑去除。 On the other hand, in another embodiment of the method for manufacturing a printed wiring board of the present invention using the full-addition method, the following steps are included: a resin substrate is laminated on the metal from the side whose surface profile is controlled or the release layer side Foil or the metal foil with release layer; after laminating the metal foil and the resin substrate, the metal foil is removed or peeled by etching; the exposed or peeled surface of the resin substrate produced by removing or peeling the metal foil , Washing the surface of the resin substrate with dilute sulfuric acid, etc .; setting a plating resist on the surface of the washed resin substrate; exposing the plating resist, and then removing the plating resist in the area where the circuit is formed ; Providing an electroless plating layer (for example, an electroless copper plating layer and an electroless plating layer having a thickness) in an area where the circuit is formed, from which the plating resist is removed; and removing the plating resist.

另外,半加成法以及全加成法有時具有如下效果:藉由將上述樹脂基材表面洗淨,容易設置無電解鍍敷層。尤其是當脫模層殘留在樹脂基材表面時,有時具有如下效果:藉由該洗淨將脫模層的一部分或全部從樹脂基材表面去除,所以藉由上述樹脂基材表面的洗淨,更加容易設置無電解鍍敷層。該洗淨能使用利用眾所周知的洗淨方法(所使用的液體的種類、溫度、液體的塗布方法等)進行的洗淨。又,較佳為使用能將本發明的脫模層的一部分或全部去除的洗淨方法。 In addition, the semi-additive method and the full-additive method may have the effect of easily providing an electroless plating layer by cleaning the surface of the resin substrate. In particular, when the mold release layer remains on the surface of the resin substrate, it may have the effect that part or all of the mold release layer is removed from the surface of the resin substrate by the cleaning. It is easier to set the electroless plating layer. This washing | cleaning can use the washing | cleaning by a well-known washing | cleaning method (the kind and temperature of the liquid used, the coating method of a liquid, etc.). Moreover, it is preferable to use the washing | cleaning method which can remove a part or all of the mold release layer of this invention.

這樣一來,能利用半加成方法或全加成方法在去除或剝離金屬箔後的樹脂基材的露出面或剝離面形成電路,從而製作印刷電路形成基板、半導體封裝用電路形成基板。進而,能使用該電路形成基板製作印刷配線板、半導體封裝。進而,能使用上述印刷配線板、半導體封裝製作電子機器。 In this way, a semi-additive method or a full-additive method can be used to form a circuit on the exposed or peeled surface of the resin base material after the metal foil is removed or peeled, thereby producing a printed circuit forming substrate and a semiconductor package circuit forming substrate. Furthermore, a printed wiring board and a semiconductor package can be produced using this circuit formation substrate. Furthermore, an electronic device can be manufactured using the printed wiring board and the semiconductor package.

[實施例] [Example]

以下揭示本發明的實施例以及作為比較例的實驗例,但提供這些實施例的目的在於更好地理解本發明及其優點,並不意圖限定發明。 Examples of the present invention and experimental examples as comparative examples are disclosed below, but these examples are provided for better understanding of the present invention and its advantages, and are not intended to limit the invention.

‧生箔(表面處理前的銅箔)的製造 ‧Manufacture of green foil (copper foil before surface treatment)

(實施例1~16、19、比較例1~3) (Examples 1 to 16, 19, and Comparative Examples 1 to 3)

準備鈦制旋轉轉筒(電解轉筒)。然後,根據表1所記載的電解轉筒表面控制條件進行研磨,製作表面具有指定的均方根高度Sq的電解轉筒。具體來說,利用表1所記載的號數之研磨帶對上述電解轉筒的表面進行研磨。此時,一面將研磨帶在轉筒的寬度方向上捲繞指定寬度並使研磨帶朝轉筒的寬度方向移動,一面使轉筒旋轉,由此進行研磨。將上述研磨時的轉筒表面的旋轉速度示於表1。另外,研磨時間設為根據研磨帶的寬度及研磨帶的移動速度在1次行程內通過轉筒表面的1點的時間與行程次數的乘積。這裡所謂研磨帶的1次行程是指利用研磨帶從軸方向(電解銅箔的寬度方向)的一個端部至另一端部,對旋轉轉筒的圓周方向的表面進行1次研磨。 A titanium rotating drum (electrolytic drum) was prepared. Then, it grinds according to the control conditions of the surface of the electrolytic drum described in Table 1, and manufactures the electrolytic drum which has a predetermined root mean square height Sq on the surface. Specifically, the surface of the electrolytic drum was polished using the number of polishing tapes described in Table 1. At this time, the grinding is performed while the grinding belt is wound around a specified width in the width direction of the drum and the grinding belt is moved in the width direction of the drum, while the drum is rotated to perform grinding. Table 1 shows the rotation speed of the drum surface during the above polishing. In addition, the polishing time is the product of the time that passes one point on the surface of the drum in one stroke and the number of strokes according to the width of the polishing belt and the moving speed of the polishing belt. Here, the single stroke of the polishing tape means that the surface of the rotating drum in the circumferential direction is polished once from the one end to the other end in the axial direction (the width direction of the electrolytic copper foil) of the polishing tape.

即,研磨時間是由以下數學式表示。 That is, the polishing time is expressed by the following mathematical formula.

研磨時間(分鐘)=每一行程的研磨帶的寬度(cm/次)/研磨帶的移動速度(cm/分鐘)×行程次數(次) Grinding time (minutes) = width of the grinding belt (cm / time) per stroke / moving speed of the grinding belt (cm / minute) × number of strokes (times)

對於實施例2、5、8、14~16、比較例3,在研磨電解轉筒的表面時,利用水將轉筒表面潤濕。 For Examples 2, 5, 8, 14 to 16, and Comparative Example 3, when the surface of the electrolytic drum was polished, the surface of the drum was wet with water.

然後,在電解槽中配置上述電解轉筒,並在轉筒周圍隔開指定的極間距離地配置電極。然後,在實施例1~10、12、14~16、比較例2、3中,在電解槽利用下述條件進行電解,使電解轉筒旋轉並且使銅析出至該電解轉筒的表面。將此時的電流密度及電解液線速度記載於表1。 Then, the electrolytic drum is placed in the electrolytic cell, and electrodes are arranged around the drum at a predetermined distance between the electrodes. Then, in Examples 1 to 10, 12, 14 to 16, and Comparative Examples 2 and 3, electrolysis was performed in the electrolytic cell under the following conditions, the electrolytic drum was rotated, and copper was deposited on the surface of the electrolytic drum. Table 1 shows the current density and the linear velocity of the electrolyte at this time.

(電解液組成) (Electrolyte composition)

Cu 120g/L Cu 120g / L

H2SO4 100g/L H 2 SO 4 100g / L

氯化物離子(Cl-)70ppm 70ppm - chloride ion (Cl)

魚膠6ppm 6mg

電解液溫度60℃ Electrolyte temperature 60 ℃

在實施例11、19、比較例1中,向上述電解液以追加之方式添加80ppm的添加劑雙(3-磺丙基)二硫化物(SPS)。 In Examples 11, 19, and Comparative Example 1, 80 ppm of an additive bis (3-sulfopropyl) disulfide (SPS) was added to the electrolyte solution in an additional manner.

實施例13中使用的電解液組成除將氯化物離子濃度設為2ppm以下且不使用魚膠而是添加動物膠2ppm以外,與實施例1~10、12、14~16、比較例2、3相同。 The composition of the electrolytic solution used in Example 13 was the same as that of Examples 1 to 10, 12, 14 to 16, and Comparative Examples 2, 3, except that the chloride ion concentration was set to 2 ppm or less, and 2 g of animal gum was added instead of fish gelatine. the same.

然後,剝下析出至正旋轉的電解轉筒表面的銅,連續製造表1所記載之厚度的電解銅箔。 Then, the copper deposited on the surface of the electrolytic drum rotating forward was peeled off, and an electrolytic copper foil having a thickness described in Table 1 was continuously produced.

(實施例17) (Example 17)

對精銅鑄錠反復進行壓延及退火而製成0.2mm的厚度。然後,進行最終冷軋,將銅箔的厚度製成80μm。最終冷軋的加工度設為60%。而且,設為:壓延加工度=(壓延前的板厚-壓延後的板厚)/壓延前的板厚×100%;油膜當量設為20000。 The refined copper ingot was repeatedly rolled and annealed to a thickness of 0.2 mm. Then, final cold rolling was performed to make the thickness of the copper foil 80 μm. The final cold rolling workability was 60%. In addition, it is set as: rolling degree = (plate thickness before rolling-plate thickness after rolling) / plate thickness before rolling × 100%; and an oil film equivalent is set to 20,000.

油膜當量由以下數學式表示。 The oil film equivalent is expressed by the following mathematical formula.

油膜當量={(壓延油黏度[cSt])×(通板速度[mpm]+輥周速度[mpm])}/{(輥的咬入角[rad])×(材料的降伏應力[kg/mm2])} Oil film equivalent = {(rolled oil viscosity [cSt]) × (through plate speed [mpm] + roller speed [mpm])} / {(roller bite angle [rad]) × (material drop stress [kg / mm 2 ])}

壓延油黏度[cSt]為40℃下的動態黏度。 The rolling oil viscosity [cSt] is the dynamic viscosity at 40 ° C.

而且,最終冷軋中使用的壓延輥是使用表面為Sq=0.20μm的輥。關於壓延輥的表面調整,藉由在對壓延輥進行研削時使研削時間比通常情況更長,能減小Sq的值。而且,藉由縮短研削時間,能增大Sq的值。 The calender roll used in the final cold rolling was a roll having a surface Sq = 0.20 μm. Regarding the surface adjustment of the calender roll, it is possible to reduce the value of Sq by making the grinding time longer than usual when grinding the calender roll. Further, by shortening the grinding time, the value of Sq can be increased.

(實施例18) (Example 18)

對Zn 25mass%、其餘部分為Cu以及無法避免的雜質的銅合金(黃銅)鑄錠反復進行壓延及退火而製成0.2mm的厚度。然後在以下條件下進行最終冷軋,將銅箔的厚度製成80μm。最終冷軋的加工度設為60%。壓延加工度=(壓延前的板厚-壓延後的板厚)/壓延前的板厚×100% A copper alloy (brass) ingot with 25 mass% of Zn, Cu remaining and unavoidable impurities was repeatedly rolled and annealed to a thickness of 0.2 mm. Then, final cold rolling was performed under the following conditions to make the thickness of the copper foil 80 μm. The final cold rolling workability was 60%. Calendering degree = (sheet thickness before rolling-sheet thickness after rolling) / sheet thickness before rolling × 100%

油膜當量設為20000。 The oil film equivalent is set to 20000.

油膜當量由下式表示。 The oil film equivalent is expressed by the following formula.

油膜當量={(壓延油黏度[cSt])×(通板速度[mpm]+輥周速度[mpm])}/{(輥的咬入角[rad])×(材料的降伏應力[kg/mm2])} Oil film equivalent = {(rolled oil viscosity [cSt]) × (through plate speed [mpm] + roller speed [mpm])} / {(roller bite angle [rad]) × (material drop stress [kg / mm 2 ])}

壓延油黏度[cSt]為40℃下的動態黏度。 The rolling oil viscosity [cSt] is the dynamic viscosity at 40 ° C.

而且,最終冷軋中使用的壓延輥是使用表面為Sq=0.20μm的輥。關於壓延輥的表面調整,藉由在對壓延輥進行研削時使研削時間比通常情況更長,能減小Sq的值。而且,藉由縮短研削時間,能增大Sq的值。 The calender roll used in the final cold rolling was a roll having a surface Sq = 0.20 μm. Regarding the surface adjustment of the calender roll, the value of Sq can be reduced by making the grinding time longer than usual when grinding the calender roll. Further, by shortening the grinding time, the value of Sq can be increased.

‧表面處理 ‧Surface treatment

然後,作為表面處理,當為電解銅箔時是對生箔的M面(析出面、無光澤面)進行如下述之處理,當為壓延銅箔時則對生箔的任一個面進行如下述之處理,即,在下文所示的各條件下進行粗化處理、耐熱處理、防銹處理、矽烷偶合處理、樹脂層形成處理中的任一種處理、或者組合地進行各處理。接下來,在下文所示的條件下在銅箔的該處理側表面形成脫模層。另外,當未特別說明時,各處理是按上述記載順序進行。而且,表1中各處理欄中記載為「無」時表示未實施這些處理。另外,實施例5、7、8、10對S面(轉筒側的面、光滑面、光澤面)也進行了與M面相同的上述處理。另外,在形成有脫模層的實施例以及比較例中,將銅箔的與形成有脫模層的一側為相反側的面設為第一面,將銅箔的形成有脫模層的一側的面設為第二面。而且,在未形成脫模層的實施例以及比較例中,將電解銅箔的S面側的面設為第一面,將電解銅箔的M面側 的面設為第二面。 Then, as the surface treatment, in the case of electrolytic copper foil, the M surface (precipitated surface, matte surface) of the green foil is treated as described below, and in the case of rolled copper foil, any surface of the green foil is treated as described below. That is, each of the roughening treatment, heat-resistant treatment, rust prevention treatment, silane coupling treatment, and resin layer forming treatment is performed under each condition shown below, or each treatment is performed in combination. Next, a release layer was formed on the treated side surface of the copper foil under the conditions shown below. In addition, unless otherwise specified, each process is performed in the order described above. In addition, when "None" is described in each processing column in Table 1, it means that these processings were not performed. In addition, Examples 5, 7, 8, and 10 also performed the same treatment as that of the M surface on the S surface (the surface on the drum side, the smooth surface, and the glossy surface). In the examples and comparative examples in which the mold release layer was formed, the surface of the copper foil opposite to the side on which the mold release layer was formed was set as the first surface, and the copper foil with the mold release layer formed was the first surface. One surface is set as a second surface. In the examples and comparative examples in which the release layer was not formed, the surface on the S surface side of the electrolytic copper foil was set as the first surface, and the surface on the M surface side of the electrolytic copper foil was set as the second surface.

(1)粗化處理 (1) Roughening

[球狀粗化] [Spherical roughening]

使用由Cu、H2SO4、As構成的下文記載的銅粗化鍍浴形成球狀粗化粒子。 Spherical roughened particles were formed using a copper roughening plating bath described below composed of Cu, H 2 SO 4 , and As.

‧液體組成1 ‧Liquid composition 1

CuSO4‧5H2O 78~118g/L CuSO 4 ‧5H 2 O 78 ~ 118g / L

Cu 20~30g/L Cu 20 ~ 30g / L

H2SO4 12g/L H 2 SO 4 12g / L

砷1.0~3.0g/L Arsenic 1.0 ~ 3.0g / L

(電性鍍敷溫度1)25~33℃ (Electric plating temperature 1) 25 ~ 33 ℃

(電流條件1)電流密度78A/dm2(鍍浴的極限電流密度以上) (Current condition 1) Current density 78A / dm 2 (above the limiting current density of the plating bath)

(鍍敷時間1)1~45秒鐘 (Plating time 1) 1 ~ 45 seconds

接下來,利用由硫酸-硫酸銅構成的銅電解浴進行覆蓋鍍敷以防止粗化粒子的脫落及提高剝離強度。將覆蓋鍍敷條件記載在下文中。 Next, a copper electrolysis bath made of sulfuric acid-copper sulfate was used for covering plating to prevent the coarse particles from falling off and to improve the peeling strength. The covering plating conditions are described below.

‧液體組成2 ‧Liquid composition 2

CuSO4‧5H2O 156g/L CuSO 4 ‧5H 2 O 156g / L

Cu 40g/L Cu 40g / L

H2SO4 120g/L H 2 SO 4 120g / L

(電性鍍敷溫度2)40℃ (Electrical plating temperature 2) 40 ° C

(電流條件2)電流密度:20A/dm2(小於鍍浴的極限電流密度) (Current condition 2) Current density: 20A / dm 2 (less than the limiting current density of the plating bath)

(鍍敷時間2)1~60秒鐘 (Plating time 2) 1 ~ 60 seconds

(2)耐熱處理(阻隔處理) (2) Heat-resistant treatment (barrier treatment)

(液體組成) (Liquid composition)

Ni 13g/L Ni 13g / L

Zn 5g/L Zn 5g / L

pH值2 pH 2

(電性鍍敷條件) (Electroless plating conditions)

溫度40℃ Temperature 40 ℃

電流密度8A/dm2 Current density 8A / dm 2

(3)防銹處理 (3) Anti-rust treatment

(液體組成) (Liquid composition)

CrO3 2.5g/L CrO 3 2.5g / L

Zn 0.7g/L Zn 0.7g / L

Na2SO4 10g/L Na 2 SO 4 10g / L

pH值4.8 pH 4.8

(鉻酸鋅條件) (Zinc Chromate Condition)

溫度54℃ Temperature 54 ℃

電流密度0.7As/dm2 Current density 0.7As / dm 2

(4)矽烷偶合處理 (4) Silane coupling treatment

(液體組成) (Liquid composition)

四乙氧基矽烷含量0.4% Tetraethoxysilane content 0.4%

pH值7.5 pH 7.5

塗布方法溶液的噴霧 Spraying of coating method solution

(5)脫模層的形成 (5) Formation of a release layer

[脫模層A] [Release layer A]

使用噴霧塗布機將矽烷化合物(正丙基三甲氧基矽烷:4wt%)的水溶液塗布至銅箔的處理表面後,在100℃的空氣中使銅箔表面乾燥5分鐘而形成脫模層A。將“使矽烷化合物溶解在水中至進行塗布前”的攪拌時間設為30小時,將 水溶液中的醇濃度設為10vol%,將水溶液的pH值設為3.8~4.2。 An aqueous solution of a silane compound (n-propyltrimethoxysilane: 4 wt%) was applied to the treated surface of the copper foil using a spray coater, and then the surface of the copper foil was dried in air at 100 ° C. for 5 minutes to form a release layer A. The stirring time of "dissolving the silane compound in water before coating" was set to 30 hours, the alcohol concentration in the aqueous solution was set to 10 vol%, and the pH of the aqueous solution was set to 3.8 to 4.2.

[脫模層B] [Release layer B]

使用1-十二硫醇磺酸鈉作為分子內具有2個以下的巰基的化合物,使用噴霧塗布機將1-十二硫醇磺酸鈉的水溶液(1-十二硫醇磺酸鈉濃度:3wt%)塗布至銅箔的處理面後,在100℃的空氣中乾燥5分鐘而製作脫模層B。水溶液的pH值設為5~9。 Using sodium 1-dodecanethiol sulfonate as a compound having 2 or less mercapto groups in the molecule, an aqueous solution of sodium 1-dodecylthiol sulfonate (sodium 1-dodecylthiol sulfonate concentration: 3 wt%) was applied to the treated surface of the copper foil, and then dried in air at 100 ° C. for 5 minutes to produce a release layer B. The pH of the aqueous solution is set to 5-9.

[脫模層C] [Release layer C]

使用鋁酸鹽化合物的三異丙氧基鋁作為金屬烷氧化物,使用噴霧塗布機將三異丙氧基鋁的水溶液(三異丙氧基鋁濃度:0.04mol/L)塗布至銅箔的處理面後,在100℃的空氣中乾燥5分鐘而製作脫模層C。將“使鋁酸鹽化合物溶解在水中至進行塗布前”的攪拌時間設為2小時,將水溶液中的醇濃度設為0vol%,將水溶液的pH值設為5~9。 Using aluminum triisopropoxide of an aluminate compound as a metal alkoxide, an aqueous solution of aluminum triisopropoxide (triisopropoxy aluminum concentration: 0.04 mol / L) was applied to a copper foil using a spray coater. After the surface was treated, it was dried in air at 100 ° C for 5 minutes to prepare a release layer C. The stirring time of "dissolving the aluminate compound in water to before coating" was set to 2 hours, the alcohol concentration in the aqueous solution was set to 0 vol%, and the pH of the aqueous solution was set to 5 to 9.

[脫模層D] [Release layer D]

使用鈦酸鹽化合物的正癸基-三異丙氧基鈦作為金屬烷氧化物,使用噴霧塗布機將正癸基-三異丙氧基鈦的水溶液(正癸基-三異丙氧基鈦濃度:0.01mol/L)塗布至銅箔的處理面後,在100℃的空氣中乾燥5分鐘而製作脫模層D。將“使鈦酸鹽化合物溶解在水中至進行塗布前”的攪拌時間設為24小時,水溶液中的醇濃度是將甲醇設為20vol%,將水溶液的pH值設為5~9。 Using a n-decyl-triisopropoxytitanium titanate compound as the metal alkoxide, an aqueous solution of n-decyl-triisopropoxytitanium (n-decyl-triisopropoxytitanium) was spray-coated using a spray coater. (Concentration: 0.01 mol / L) After being applied to the treated surface of the copper foil, it was dried in air at 100 ° C. for 5 minutes to prepare a release layer D. The stirring time of "dissolving the titanate compound in water to before coating" was set to 24 hours, the alcohol concentration in the aqueous solution was set to 20 vol% in methanol, and the pH of the aqueous solution was set to 5 to 9.

[脫模層E] [Release layer E]

使用鋯酸鹽化合物的正丙基-三正丁氧基鋯作為金屬烷氧化物,使用噴霧塗布機將正丙基-三正丁氧基鋯的水溶液(正丙基-三正丁氧基鋯濃度:0.04mol/L)塗布至銅箔的處理面後,在100℃的空氣中乾燥5分鐘而製作脫模層E。將“使鈦酸鹽化合物溶解在水中至進行塗布前”的攪拌時間設為12小時,將水溶液中的醇濃度設為0vol%,將水溶液的pH值設為5~9。 Using an n-propyl-tri-n-butoxy zirconium of a zirconate compound as the metal alkoxide, an aqueous solution of n-propyl-tri-n-butoxy zirconium (n-propyl-tri-n-butoxy zirconium) was spray-coated using a spray coater. (Concentration: 0.04 mol / L) After being applied to the treated surface of the copper foil, it was dried in air at 100 ° C. for 5 minutes to produce a release layer E. The stirring time of "dissolving the titanate compound in water to before coating" was set to 12 hours, the alcohol concentration in the aqueous solution was set to 0 vol%, and the pH of the aqueous solution was set to 5 to 9.

(6)樹脂層形成處理 (6) Resin layer forming process

對於實施例1,在形成脫模層後,進而在下述條件下形成樹脂層。 In Example 1, after the release layer was formed, a resin layer was further formed under the following conditions.

(樹脂合成例) (Resin Synthesis Example)

向2升的三口燒瓶添加3,4,3',4'-聯苯四羧酸二酐117.68g(400mmol)、1,3-雙(3-胺基苯氧基)苯87.7g(300mmol)、γ-戊內酯4.0g(40mmol)、吡啶4.8g(60mmol)、N-甲基-2-吡咯烷酮(以下記為NMP)300g、甲苯20g,在180℃下加熱1小時後冷卻至室溫附近,然後添加3,4,3',4'-聯苯四羧酸二酐29.42g(100mmol)、2,2-雙{4-(4-胺基苯氧基)苯基}丙烷82.12g(200mmol)、NMP200g、甲苯40g並在室溫下混合1小時,然後在180℃下加熱3小時而獲得固體成分38%的嵌段共聚聚醯亞胺,上述三口燒瓶在附帶不銹鋼制錨型攪拌棒、氮氣導入管及停止旋塞的分離器上安裝了具有球形冷卻管的回流冷卻器。此嵌段共聚聚醯亞胺中,下文所示的通式(1):通式(2)=3:2,數量平均分子量為70000,重量平均分子量為150000。 To a 2-liter three-necked flask was added 117.68 g (400 mmol) of 3,4,3 ', 4'-biphenyltetracarboxylic dianhydride and 87.7 g (300 mmol) of 1,3-bis (3-aminophenoxy) benzene. , 4.0 g (40 mmol) of γ-valerolactone, 4.8 g (60 mmol) of pyridine, 300 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP), and 20 g of toluene, heated at 180 ° C for 1 hour, and then cooled to room temperature Nearby, then add 29.42 g (100 mmol) of 3,4,3 ', 4'-biphenyltetracarboxylic dianhydride, 82.12 g of 2,2-bis {4- (4-aminophenoxy) phenyl} propane (200 mmol), 200 g of NMP, 40 g of toluene, mixed at room temperature for 1 hour, and then heated at 180 ° C. for 3 hours to obtain a block copolymer polyimide having a solid content of 38%. The three-necked flask was stirred with an anchor made of stainless steel. A reflux cooler with a spherical cooling tube is installed on the separator of the rod, the nitrogen introduction tube and the stopcock. In this block copolymerized polyfluorene imine, the general formula (1) shown below: the general formula (2) = 3: 2, the number average molecular weight is 70,000, and the weight average molecular weight is 150,000.

利用NMP進一步稀釋合成例中所獲得的嵌段共聚聚醯亞胺溶液,製成固體成分10%的嵌段共聚聚醯亞胺溶液。向此嵌段共聚聚醯亞胺溶液添加雙(4-馬來醯亞胺苯基)甲烷(BMI-H,KI化成)而製成固體成分重量比率35、嵌段共聚聚醯亞胺的固體成分重量比率65(即,樹脂溶液所包含的雙(4-馬來醯亞胺苯基)甲烷固體成分重量:樹脂溶液所含的嵌段共聚聚醯亞胺固體成 分重量=35:65),並在60℃下溶解混合20分鐘而製成樹脂溶液。然後,在脫模層形成面塗敷上述樹脂溶液,在氮氣氛圍下以120℃進行3分鐘乾燥處理並以160℃進行3分鐘乾燥處理後,最後以300℃進行2分鐘加熱處理,從而製作具備樹脂層的銅箔。此外,樹脂層的厚度設為2μm。 The block copolymerized polyimide solution obtained in the synthesis example was further diluted with NMP to prepare a block copolymerized polyimide solution having a solid content of 10%. To this block copolymerized polyfluorene imide solution was added bis (4-maleimide phenylphenyl) methane (BMI-H, KI chemical conversion) to prepare a solid having a solid content weight ratio of 35 and the block copolymerized polyfluorene imide. A component weight ratio of 65 (that is, a bis (4-maleimidephenyl) methane solid component weight included in the resin solution: a block copolymerized polyimide solid component weight included in the resin solution = 35:65), Then, it was dissolved and mixed at 60 ° C for 20 minutes to prepare a resin solution. Then, the resin solution was coated on the release layer forming surface, and dried at 120 ° C for 3 minutes under a nitrogen atmosphere, and then dried at 160 ° C for 3 minutes, and finally heated at 300 ° C for 2 minutes. Copper foil for resin layer. The thickness of the resin layer was set to 2 μm.

(7)各種評價 (7) Various evaluations

‧金屬箔的兩表面的均方根高度Sq、以及均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)的評價 ‧Evaluation of the root mean square height Sq of both surfaces of the metal foil, and the ratio (Sq / Rsm) of the root mean square height Sq to the average interval Rsm of irregularities

各金屬箔的表面(進行了粗化處理等表面處理時為表面處理後的經表面處理的一側的表面,形成有脫模層時為設置脫模層後的設置有脫模層的一側的表面)的均方根高度Sq、以及均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)是使用Olympus股份有限公司製造的雷射顯微鏡LEXT OLS4100進行測定。另外,Rsm是根據JIS B 0601 2001標準模式進行測定,Sq是根據ISO25178標準模式進行測定。另外,Rsm、Sq都是將“在任意的10個部分進行測定所得的Rsm、Sq值的平均值”設為Rsm以及Sq的值。Rsm的測定長度設為258μm,Sq的測定面積設為長度258μm×寬度258μm。接下來,基於所獲得的值算出均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)。另外,測定時的溫度設為23~25℃。 The surface of each metal foil (the surface on the surface-treated side when surface-treated, such as roughening treatment, is the surface after the surface treatment, and when the mold-release layer is formed, it is the side on which the mold-release layer is provided. The surface root mean square height Sq and the ratio (Sq / Rsm) of the root mean square height Sq to the average interval Rsm of irregularities were measured using a laser microscope LEXT OLS4100 manufactured by Olympus Co., Ltd. In addition, Rsm is measured according to JIS B 0601 2001 standard mode, and Sq is measured according to ISO25178 standard mode. In addition, Rsm and Sq both set "the average value of Rsm and Sq values measured in arbitrary 10 portions" as the values of Rsm and Sq. The measurement length of Rsm is 258 μm, and the measurement area of Sq is 258 μm in length × 258 μm in width. Next, based on the obtained value, the ratio (Sq / Rsm) of the root mean square height Sq to the average interval Rsm of unevenness is calculated. The temperature at the time of measurement was 23 to 25 ° C.

‧金屬箔上的電路形成性 ‧Circuitability on metal foil

在附脫模層金屬箔的脫模層側的面(第二面)、或金屬箔的第二面積層樹脂基材而製造積層體1。然後,在附脫模層金屬箔的與樹脂基材積層的一側為相反側的面(第一面)、或金屬箔的與樹脂基材積層的一側相反側的面(第一面)塗布阻劑並進行曝光、顯影,將阻劑蝕刻成線狀。然後,形成厚度12μm的電路用Cu鍍敷後,將阻劑去除,由此分別形成20條線與間隙(L/S)為12μm/12μm且長度1mm的線狀電路(配線)。然後,在附脫模層金屬箔的形成 有電路的一側的面、或金屬箔的形成有電路的一側的面,以將電路埋入的方式藉由熱壓接而積層雙馬來醯亞胺三樹脂預浸料。然後,將積層在上述附脫模層金屬箔的脫模層側的面(第二面)、或金屬箔的第二面的樹脂基材剝離後,藉由利用氯化鐵進行蝕刻而將露出的附脫模層金屬箔、或金屬箔去除。另外,上述蝕刻要進行到上述電路以及電路周圍的雙馬來醯亞胺三樹脂預浸料完全露出的程度。接下來,對從電路上表面觀察到的電路寬度的最大值與最小值的差(μm)進行測定,對5個部位進行測定並設為平均值。如果最大值與最小值的差為2μm以下,則判斷具有良好的電路線性,設為「◎◎」。而且,上述最大值與最小值的差超過2μm且為3μm以下時,設為「◎」。而且,上述最大值與最小值的差超過3μm且為4μm以下時,設為「○○」。而且,上述最大值與最小值的差超過4μm且為5μm以下時,設為「○」。而且,上述最大值與最小值的差超過5μm時,設為「×」。 The laminated body 1 is manufactured on the surface (second surface) on the side of the release layer of the metal foil with a release layer or the second area layer of the metal foil. Then, the side of the metal foil with the release layer laminated to the resin substrate is the surface opposite to the side (first side), or the surface of the metal foil opposite to the resin substrate laminated side (the first side). The resist is applied, exposed and developed, and the resist is etched into a line shape. Then, a Cu-plated circuit with a thickness of 12 μm was formed, and then the resist was removed, thereby forming linear circuits (wirings) with 20 lines and gaps (L / S) of 12 μm / 12 μm and a length of 1 mm. Then, on the side of the metal foil with the release layer on the side where the circuit is formed, or the side of the metal foil on which the circuit is formed, the double-malay is laminated by thermocompression bonding to embed the circuit. Imine three Resin prepreg. Then, the resin substrate laminated on the release layer-side surface (second surface) of the metal foil with release layer or the second surface of the metal foil is peeled off, and then exposed by etching with ferric chloride. Remove the metal foil with release layer, or metal foil. In addition, the above etching is performed to the above circuit and the bismaleimide three around the circuit. The extent to which the resin prepreg is completely exposed. Next, the difference (μm) between the maximum value and the minimum value of the circuit width as viewed from the upper surface of the circuit was measured, and five locations were measured and set as the average value. If the difference between the maximum value and the minimum value is 2 μm or less, it is determined that the circuit has good circuit linearity, and is set to “◎◎”. When the difference between the maximum value and the minimum value exceeds 2 μm and is 3 μm or less, “◎” is set. When the difference between the maximum value and the minimum value exceeds 3 μm and is 4 μm or less, “○○” is set. When the difference between the maximum value and the minimum value exceeds 4 μm and is 5 μm or less, “○” is set. When the difference between the maximum value and the minimum value exceeds 5 μm, it is set to “×”.

‧金屬箔上的電路剝離; ‧Circuit peeling on metal foil;

在附脫模層金屬箔的脫模層側的面(第二面)、或金屬箔的第二面積層樹脂基材而製造積層體1。然後,在附脫模層金屬箔的與樹脂基材積層的一側為相反側的面(第一面)、或金屬箔的與樹脂基材積層的一側為相反側的面(第一面)塗布阻劑並進行曝光、顯影,將阻劑蝕刻成線狀。然後,形成厚度12μm的電路用Cu鍍敷後,將阻劑去除,由此分別形成20條線與間隙(L/S)為12μm/12μm且長度1mm的線狀電路(配線)。此時,在將阻劑去除時,對電路從附脫模層金屬箔的面、以及金屬箔的面剝離的次數進行計數。當10次阻劑去除中電路從附脫模層金屬箔的面、以及金屬箔的面剝離的次數為0次時設為「◎◎」,10次中為1次時設為「◎」,10次中為2~3次時設為「○」,10次中為4次以上時設為「×」。 The laminated body 1 is manufactured on the surface (second surface) on the side of the release layer of the metal foil with a release layer or the second area layer of the metal foil. Then, the side of the metal foil with the release layer laminated to the resin substrate is the side opposite to the side (first side), or the side of the metal foil laminated to the resin substrate is the side opposite to the side (first side) ) The resist is applied, exposed and developed, and the resist is etched into a line shape. Then, a Cu-plated circuit with a thickness of 12 μm was formed, and then the resist was removed, thereby forming linear circuits (wirings) with 20 lines and gaps (L / S) of 12 μm / 12 μm and a length of 1 mm. At this time, when the resist is removed, the number of times the circuit is peeled off from the surface of the metal foil with the release layer and the surface of the metal foil is counted. When the number of peelings of the circuit from the surface of the metal foil with the release layer and the surface of the metal foil during the 10 times of resist removal is 0, it is set to "◎◎", and when it is 1 out of 10 times, it is set to "◎", Set "○" when 2 to 3 times out of 10 times and "×" when 4 or more times out of 10 times.

‧積層體2的製造 ‧Manufacturing of laminated body 2

在各金屬箔的脫模層側的面(第二面)、或金屬箔的第二面分別貼合以下樹脂基材1~3。 The following resin substrates 1 to 3 are bonded to the surface (second surface) on the release layer side of each metal foil, or the second surface of the metal foil, respectively.

基材1:Mitsubishi Gas Chemical股份有限公司製造的GHPL-830 MBT Substrate 1: GHPL-830 MBT manufactured by Mitsubishi Gas Chemical Co., Ltd.

基材2:日立化成工業股份有限公司製造的679-FG Substrate 2: 679-FG manufactured by Hitachi Chemical Industries, Ltd.

基材3:Sumitomo Bakelite股份有限公司製造的EI-6785TS-F Substrate 3: EI-6785TS-F manufactured by Sumitomo Bakelite Co., Ltd.

積層加壓的溫度、壓力、時間是使用各基材製造商的推薦條件。 The temperature, pressure, and time for lamination pressurization are recommended by the manufacturer of each substrate.

‧剝離強度的評價 ‧Evaluation of peel strength

對於積層體2,依據IPC-TM-650對利用拉伸試驗機Autograph100將樹脂基材從銅箔剝離時的常規剝離強度進行測定,並根據以下基準對金屬箔的剝離性進行評價。將結果記載在表1的「剝離強度」一欄。上述剝離強度較佳為2~200gf/cm。 With respect to the laminated body 2, the conventional peel strength when the resin substrate was peeled from the copper foil using the tensile tester Autograph 100 was measured according to IPC-TM-650, and the peelability of the metal foil was evaluated according to the following criteria. The results are described in the "Peeling Strength" column in Table 1. The peeling strength is preferably 2 to 200 gf / cm.

○:2~200gf/cm的範圍。 ○: A range of 2 to 200 gf / cm.

×:小於2gf/cm或超過200gf/cm。 ×: Less than 2 gf / cm or more than 200 gf / cm.

‧樹脂的破壞模式的評價 ‧Evaluation of resin failure mode

利用電子顯微鏡觀察上述剝離後的樹脂基材的剝離面,並對樹脂的破壞模式(凝聚、介面、凝聚與介面的混合存在)進行觀察。關於樹脂的破壞模式,「介面」表示在銅箔與樹脂的介面進行剝離,「凝聚」表示剝離強度過強,樹脂遭到破壞,「混合存在」表示上述「介面」與「凝聚」混合存在。樹脂的破壞模式較佳為「介面」。 The peeling surface of the resin substrate after peeling was observed with an electron microscope, and a failure mode of the resin (aggregation, interface, a mixture of aggregation and interface) was observed. Regarding the failure mode of the resin, "Interface" means peeling at the interface between the copper foil and the resin, "Cohesion" means that the peeling strength is too strong and the resin is broken, and "Mixed presence" means that the "Interface" and "Cohesion" are mixed. The failure mode of the resin is preferably an "interface".

‧電路剝離、基板隆起的評價 ‧Evaluation of circuit peeling and substrate bulge

在上述剝離後的樹脂基材1~3的剝離面,使用鍍敷液〔液體組成為Cu:50g/L、H2SO4:50g/L、Cl:60ppm)形成銅鍍敷圖案(線/間隙=40μm/40μm)(例1)。另外,在例1中,與上述半加成法同樣地在形成上述銅鍍敷圖案前,對上述剝離後的樹脂基材1~3的剝離面實施洗淨以及無電解鍍銅。然 後,將乾膜積層在無電解鍍銅層。接下來,進行曝光顯影而將乾膜蝕刻成線狀,並將形成銅鍍敷圖案的預定部位的乾膜去除。然後,在未被乾膜覆蓋的無電解鍍銅層上藉由電性鍍敷而形成上述銅鍍敷圖案。接下來,在形成銅鍍敷圖案後,將乾膜以及未形成銅鍍敷圖案的部分的無電解鍍銅層去除。而且,在上述剝離後的樹脂基材的剝離面,使用含有導電膏的油墨藉由噴墨而形成印刷圖案(線/間隙=40μm/40μm)(例2)。而且,在上述剝離後的樹脂基材的剝離面,層疊由液晶聚合物構成的樹脂層(假定構成增層的樹脂)(例3)。 On the peeling surfaces of the resin substrates 1 to 3 after the peeling, a copper plating pattern (line / line) was formed using a plating solution (a liquid composition of Cu: 50 g / L, H 2 SO 4 : 50 g / L, and Cl: 60 ppm). Gap = 40 μm / 40 μm) (Example 1). In addition, in Example 1, the peeling surfaces of the resin substrates 1 to 3 after the peeling were cleaned and electroless copper plating was performed before the copper plating pattern was formed, as in the semi-additive method. Then, the dry film was laminated on an electroless copper plating layer. Next, exposure and development are performed to etch the dry film into a linear shape, and the dry film at a predetermined portion where the copper plating pattern is formed is removed. Then, the above-mentioned copper plating pattern is formed on the electroless copper plating layer not covered by the dry film by electroplating. Next, after the copper plating pattern is formed, the dry film and the electroless copper plating layer in a portion where the copper plating pattern is not formed are removed. Further, a printed pattern (line / gap = 40 μm / 40 μm) was formed by ink jetting using an ink containing a conductive paste on the peeling surface of the resin substrate after the peeling (Example 2). Then, a resin layer (assuming a resin constituting a build-up layer) made of a liquid crystal polymer was laminated on the release surface of the resin substrate after the peeling (Example 3).

然後,分別藉由可靠性試驗(250℃±10℃×1小時的加熱試驗)確認是否產生電路剝離或基板隆起。另外,評價樣品的大小設為250mm×250mm,每個樣品編號對3個樣品進行測定。 Then, it was confirmed by a reliability test (250 ° C. ± 10 ° C. × 1 hour heating test) whether circuit peeling or substrate bulging occurred. The size of the evaluation sample was 250 mm × 250 mm, and three samples were measured for each sample number.

將未產生電路剝離以及基板隆起的樣品評價為「◎」。將產生少量電路剝離或基板隆起(1個樣品中有3處以下)但只要篩選所使用的部位便能作為產品使用的樣品評價為「○」。而且,將產生多處電路剝離或基板隆起(1個樣品中有超過3處)而無法作為產品使用的樣品評價為「×」。 A sample in which no circuit peeling and substrate bulging occurred was evaluated as "「 ". A small amount of circuit peeling or substrate bulging (three or less in one sample) was evaluated as "○" for a sample that could be used as a product as long as it was screened. In addition, a sample having multiple circuit peeling or substrate bumps (more than three in one sample) that could not be used as a product was evaluated as “×”.

將各試驗條件以及評價結果示於表1。 The test conditions and evaluation results are shown in Table 1.

(評價結果) (Evaluation results)

實施例1~19是第一面的均方根高度Sq為0.01~1μm的金屬箔的例子,金屬箔上的電路形成性良好,能良好地抑制金屬箔上的電路剝離。而且,實施例1~18是在第二面側設置有脫模層的例子、或金屬箔的第二面的Sq、及/或Sq/Rsm被控制在指定範圍的例子,將金屬箔從樹脂基材物理剝離時的剝離性良好,能良好地抑制電路剝離、基板隆起的產生。實施例19是在第二面側設置有脫模層的例子,將金屬箔從樹脂基材物理剝離時的剝離性良好。 Examples 1 to 19 are examples of metal foils having a root-mean-square height Sq of 0.01 to 1 μm on the first surface. Circuit formation on the metal foil is good, and circuit peeling on the metal foil can be suppressed well. In addition, Examples 1 to 18 are examples in which a release layer is provided on the second surface side, or Sq and / or Sq / Rsm of the second surface of the metal foil are controlled within a specified range, and the metal foil is removed from the resin The substrate has good releasability during physical peeling, and can effectively suppress the occurrence of circuit peeling and substrate bulge. Example 19 is an example in which a release layer was provided on the second surface side, and the peelability was good when the metal foil was physically peeled from the resin substrate.

比較例1、2中,第一面的均方根高度Sq超過1μm,金屬箔上的電路形成性欠佳。比較例3中,第一面的均方根高度Sq小於0.01μm,無法充分抑制金屬箔上的電路剝離。 In Comparative Examples 1 and 2, the root-mean-square height Sq of the first surface exceeded 1 μm, and the circuit formability on the metal foil was poor. In Comparative Example 3, the root mean square height Sq of the first surface was less than 0.01 μm, and the peeling of the circuit on the metal foil could not be sufficiently suppressed.

Claims (35)

一種附脫模層金屬箔,其具備:金屬箔,其具有第一面及第二面且上述第一面的均方根高度Sq為0.01μm以上且1μm以下,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值;以及脫模層,其設置在上述金屬箔的第二面。A metal foil with a release layer includes: a metal foil having a first surface and a second surface, and the root mean square height Sq of the first surface is 0.01 μm or more and 1 μm or less, and the root mean square height Sq is The measurement area was an average value of Sq obtained by measuring 258 μm × width 258 μm in 10 arbitrary portions, and a release layer provided on the second surface of the metal foil. 如申請專利範圍第1項之附脫模層金屬箔,其中,上述金屬箔的上述第二面的均方根高度Sq為0.25μm以上且1.6μm以下,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值。For example, the metal foil with a release layer according to item 1 of the patent application scope, wherein the root mean square height Sq of the second surface of the metal foil is 0.25 μm or more and 1.6 μm or less, and the root mean square height Sq is a measurement area. An average value of Sq obtained by measuring in a length of 258 μm × width of 258 μm in 10 arbitrary portions was set. 如申請專利範圍第1項之附脫模層金屬箔,其具有上述金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下的表面凹凸,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值。For example, the metal foil with a release layer in item 1 of the patent application scope has a ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness of 0.03 or more and 0.40 or less. The surface unevenness, and the root mean square height Sq is an average value of Sq obtained by measuring the measurement area at a length of 258 μm × width of 258 μm in arbitrary 10 portions. 如申請專利範圍第2項之附脫模層金屬箔,其具有上述金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下的表面凹凸,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值。For example, the metal foil with a release layer in item 2 of the patent application scope has a ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness of 0.03 or more and 0.40 or less. The surface unevenness, and the root mean square height Sq is an average value of Sq obtained by measuring the measurement area at a length of 258 μm × width of 258 μm in arbitrary 10 portions. 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其滿足以下(5-1)及(5-2)中的任一項或兩項,(5-1)上述第一面的均方根高度Sq滿足以下(5-1-1)及(5-1-2)中的任一項或兩項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:(5-1-1)上述第一面的均方根高度Sq滿足以下任一項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:.為0.020μm以上;.為0.025μm以上;(5-1-2)上述第一面的均方根高度Sq滿足以下任一項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:.為0.90μm以下;.為0.32μm以下;.為0.25μm以下;(5-2)上述金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)滿足以下任一項或兩項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:.為0.05以上;.為0.24以下。For example, the metal foil with a release layer according to any one of the items 1 to 4 of the patent application scope satisfies any one or two of the following (5-1) and (5-2), (5-1) above The root-mean-square height Sq of the first surface satisfies any one or both of the following (5-1-1) and (5-1-2). The root-mean-square height Sq is a measurement area having a length of 258 μm × The average value of Sq obtained by measuring at a width of 258 μm in arbitrary 10 parts: (5-1-1) The root mean square height Sq of the first surface satisfies any one of the following, and the root mean square height Sq is determined by measuring The area is set to an average value of Sq obtained by measuring 258 μm × width 258 μm in arbitrary 10 parts:. 0.020μm or more; It is 0.025 μm or more; (5-1-2) The root-mean-square height Sq of the first surface satisfies any of the following, and the root-mean-square height Sq is a length of 258 μm × width 258 μm of the measurement area at an arbitrary 10 The average value of Sq measured in each part:. 0.90 μm or less; 0.32 μm or less; 0.25 μm or less; (5-2) The ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness satisfies any one or both of the following, the root mean square height Sq is the average value of Sq obtained by setting the measurement area to a length of 258 μm × width of 258 μm and measuring in any 10 parts:. More than 0.05; It is 0.24 or less. 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其中,上述金屬箔的厚度為1μm以上且105μm以下。For example, the metal foil with a release layer according to any one of claims 1 to 4, wherein the thickness of the metal foil is 1 μm or more and 105 μm or less. 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其中,上述金屬箔為銅箔。For example, the metal foil with a release layer according to any one of claims 1 to 4 of the patent application scope, wherein the metal foil is a copper foil. 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其中,在上述金屬箔的第一面、及/或上述金屬箔與上述脫模層之間設置選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層。For example, the metal foil with a release layer according to any one of claims 1 to 4, wherein a first surface of the metal foil and / or between the metal foil and the mold release layer is selected from roughening One or more layers in the group consisting of a treatment layer, a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer. 如申請專利範圍第8項之附脫模層金屬箔,其中,於設置在上述金屬箔的第一面的上述選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層設置有樹脂層。For example, the metal foil with a release layer according to item 8 of the patent application scope, wherein the above-mentioned provided on the first surface of the metal foil is selected from a roughened layer, a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane One or more layers in the group consisting of the coupling treatment layers are provided with a resin layer. 如申請專利範圍第9項之附脫模層金屬箔,其中,上述樹脂層為接著用樹脂、底漆或半硬化狀態的樹脂。For example, the metal foil with a release layer according to item 9 of the application, wherein the resin layer is a resin, a primer, or a semi-hardened resin. 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其中,上述脫模層包含至少1種或2種以上的下述化合物,上述化合物選自由下述化學式所表示的鋁酸鹽化合物、鈦酸鹽化合物、鋯酸鹽化合物、鋁酸鹽化合物的水解產物、鈦酸鹽化合物的水解產物、鋯酸鹽化合物的水解產物、鋁酸鹽化合物的水解產物的縮合物、鈦酸鹽化合物的水解產物的縮合物以及鋯酸鹽化合物的水解產物的縮合物所組成的群中,(R1)m-M-(R2)n(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成的群中的烴基、或上述烴基的一個以上的氫原子被鹵素原子所取代的烴基,M為Al、Ti、Zr中的任一個,n為0、1或2,m為1以上且M的價數以下的整數,R1中的至少一個為烷氧基;m+n為M的價數;M的價數在Al的情況下為3,在Ti、Zr的情況下為4)。For example, the metal foil with a release layer according to any one of claims 1 to 4, wherein the release layer includes at least one or two or more of the following compounds selected from the group consisting of the following chemical formulas Aluminate compounds, titanate compounds, zirconate compounds, hydrolysates of aluminate compounds, hydrolysates of titanate compounds, hydrolysates of zirconate compounds, condensation products of hydrolysates of aluminate compounds, In a group consisting of a condensate of a hydrolyzate of a titanate compound and a condensate of a zirconate compound, (R 1 ) m -M- (R 2 ) n (wherein R 1 is an alkoxy group) Or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or a hydrocarbon group in which one or more hydrogen atoms of the above hydrocarbon group are replaced by a halogen atom, and M is Al, Ti, Zr In any of these, n is 0, 1, or 2, m is an integer from 1 to M and the valence of M is at least one, and at least one of R 1 is an alkoxy group; m + n is the valence of M; the valence of M In the case of Al, it is 3, and in the case of Ti and Zr, 4). 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其中,上述脫模層包含至少1種或2種以上的下述化合物,上述化合物選自由下述化學式所表示的矽烷化合物、上述矽烷化合物的水解產物以及上述水解產物的縮合物所組成的群中,(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成的群中的烴基、或上述烴基的一個以上的氫原子被鹵素原子所取代的烴基,R3及R4分別獨立地為鹵素原子、烷氧基、選自由烷基、環烷基及芳基所組成的群中的上述烴基或上述烴基的一個以上的氫原子被鹵素原子所取代的烴基)。For example, the metal foil with a release layer according to any one of claims 1 to 4, wherein the release layer includes at least one or two or more of the following compounds selected from the group consisting of the following chemical formulas In the group consisting of a silane compound, a hydrolysis product of the above-mentioned silane compound, and a condensation product of the above-mentioned hydrolysis product, (In the formula, R 1 is an alkoxy group or a halogen atom, and R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms of the above hydrocarbon group are replaced by a halogen atom. R 3 and R 4 are each independently a halogen atom, an alkoxy group, one or more of the above-mentioned hydrocarbon group or one or more hydrogen atoms of the above-mentioned hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group are halogen atoms. Substituted hydrocarbyl). 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其中,上述脫模層是使用分子內具有2個以下巰基的化合物而成。For example, the metal foil with a release layer according to any one of claims 1 to 4 of the application, wherein the release layer is formed by using a compound having two or less mercapto groups in the molecule. 如申請專利範圍第1至4項中任一項之附脫模層金屬箔,其中,在上述脫模層表面設置有樹脂層。For example, the metal foil with a release layer according to any one of claims 1 to 4, wherein a resin layer is provided on the surface of the release layer. 如申請專利範圍第14項之附脫模層金屬箔,其中,上述樹脂層為接著用樹脂、底漆或半硬化狀態的樹脂。For example, the metal foil with a release layer according to item 14 of the application, wherein the resin layer is a resin, a primer, or a semi-hardened resin. 一種金屬箔,其具有第一面及第二面,且上述第一面的均方根高度Sq為0.01μm以上且1μm以下,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值。A metal foil having a first surface and a second surface, and the root mean square height Sq of the first surface is 0.01 μm or more and 1 μm or less, and the root mean square height Sq is a measurement area having a length of 258 μm × width 258 μm And the average value of Sq obtained by measurement in arbitrary 10 parts was measured. 如申請專利範圍第16項之金屬箔,其中,上述第二面的均方根高度Sq為0.25μm以上且1.6μm以下,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值。For example, the metal foil of the 16th area of the patent application, wherein the root mean square height Sq of the second surface is 0.25 μm or more and 1.6 μm or less, and the root mean square height Sq is a measurement area having a length of 258 μm × width 258 μm and The average value of Sq obtained by measurement was measured in 10 arbitrary portions. 如申請專利範圍第16項之金屬箔,其具有上述金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下的表面凹凸,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值。For example, the metal foil of the 16th area of the application for a patent has a surface asperity having a ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of asperities of 0.03 to 0.40. The root-mean-square height Sq is an average value of Sq obtained by measuring the measurement area at a length of 258 μm × width of 258 μm in 10 arbitrary portions. 如申請專利範圍第17項之金屬箔,其具有上述金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)為0.03以上且0.40以下的表面凹凸,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值。For example, the metal foil of claim 17 has a surface asperity having a ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of asperities of 0.03 to 0.40. The root-mean-square height Sq is an average value of Sq obtained by measuring the measurement area at a length of 258 μm × width of 258 μm in 10 arbitrary portions. 如申請專利範圍第16至19項中任一項之金屬箔,其滿足以下(20-1)及(20-2)中的任一項或兩項,(20-1)上述第一面的均方根高度Sq滿足以下(20-1-1)及(20-1-2)中的任一項或兩項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:(20-1-1)上述第一面的均方根高度Sq滿足以下任一項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:.為0.020μm以上;.為0.025μm以上;(20-1-2)上述第一面的均方根高度Sq滿足以下任一項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:.為0.90μm以下;.為0.32μm以下;.為0.25μm以下;(20-2)上述金屬箔的第二面的均方根高度Sq與凹凸的平均間隔Rsm的比(Sq/Rsm)滿足以下任一項或兩項,上述均方根高度Sq為將測定區域設為長度258μm×寬度258μm且在任意的10個部分進行測定所得的Sq的平均值:.為0.05以上;.為0.24以下。If the metal foil of any one of the 16th to 19th of the scope of patent application, it satisfies any one or two of the following (20-1) and (20-2), (20-1) The root-mean-square height Sq satisfies any one or both of the following (20-1-1) and (20-1-2). The above-mentioned root-mean-square height Sq is a measurement area having a length of 258 μm × width of 258 μm and The average value of Sq measured by arbitrary 10 parts: (20-1-1) The root-mean-square height Sq of the first surface satisfies any of the following, and the root-mean-square height Sq is the length of the measurement area. 258 μm × width 258 μm and the average value of Sq measured in arbitrary 10 parts:. 0.020μm or more; (20-1-2) The root-mean-square height Sq of the first surface satisfies any of the following, and the root-mean-square height Sq is a measurement area having a length of 258 μm × width of 258 μm and an arbitrary value of 10 The average value of Sq measured in each part:. 0.90 μm or less; 0.32 μm or less; 0.25 μm or less; (20-2) The ratio (Sq / Rsm) of the root mean square height Sq of the second surface of the metal foil to the average interval Rsm of the unevenness satisfies any one or both of the following, the root mean square height Sq is the average value of Sq obtained by setting the measurement area to a length of 258 μm × width of 258 μm and measuring in any 10 parts:. More than 0.05; It is 0.24 or less. 如申請專利範圍第16至19項中任一項之金屬箔,其中,上述金屬箔的厚度為1μm以上且105μm以下。For example, the metal foil according to any one of claims 16 to 19, wherein the thickness of the metal foil is 1 μm or more and 105 μm or less. 如申請專利範圍第16至19項中任一項之金屬箔,其中,上述金屬箔為銅箔。For example, the metal foil according to any one of claims 16 to 19, wherein the metal foil is a copper foil. 如申請專利範圍第16至19項中任一項之金屬箔,其中,在上述金屬箔的第一面、及/或上述金屬箔的第二面設置選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層。For example, the metal foil according to any one of claims 16 to 19, wherein the first surface of the metal foil and / or the second surface of the metal foil is selected from a roughened layer, a heat-resistant layer, One or more layers in the group consisting of a rust layer, a chromate-treated layer, and a silane coupling-treated layer. 如申請專利範圍第23項之金屬箔,其中,於設置在上述金屬箔的第一面的上述選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層以及矽烷偶合處理層所組成的群中一種以上的層設置有樹脂層。For example, the metal foil of the 23rd scope of the patent application, wherein the above-mentioned provided on the first surface of the metal foil is selected from the group consisting of a roughened layer, a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane coupling-treated layer. One or more layers in the composed group are provided with a resin layer. 一種積層體,其具備申請專利範圍第1至15項中任一項之附脫模層金屬箔或申請專利範圍第16至24項中任一項之金屬箔、及設置在上述附脫模層金屬箔或上述金屬箔的樹脂基材。A laminated body comprising a metal foil with a release layer according to any one of the patent applications 1 to 15 or a metal foil with any of the patent applications 16 to 24 and the above-mentioned release layer A metal foil or a resin substrate for the metal foil. 如申請專利範圍第25項之積層體,其中,上述樹脂基材為預浸料、或者、包含熱硬化性樹脂。For example, the laminated body according to item 25 of the application, wherein the resin substrate is a prepreg or contains a thermosetting resin. 一種印刷配線板,其具備申請專利範圍第1至15項中任一項之上述附脫模層金屬箔或申請專利範圍第16至24項中任一項之金屬箔。A printed wiring board comprising the above-mentioned metal foil with a release layer according to any one of claims 1 to 15 or a metal foil according to any of claims 16 to 24. 一種半導體封裝,其具備申請專利範圍第27項之印刷配線板。A semiconductor package includes a printed wiring board with a scope of application for item 27. 一種電子機器,其具備申請專利範圍第27項之印刷配線板或申請專利範圍第28項之半導體封裝。An electronic device includes a printed wiring board with a patent scope of 27 or a semiconductor package with a patent scope of 28. 一種印刷配線板的製造方法,其包含以下步驟:在申請專利範圍第1至15項中任一項之附脫模層金屬箔或申請專利範圍第16至24項中任一項之金屬箔貼合絕緣基板;藉由將上述附脫模層金屬箔或上述金屬箔在不被蝕刻的情況下從上述絕緣基板剝離,而獲得在剝離面轉印有上述附脫模層金屬箔或上述金屬箔之表面輪廓的絕緣基板;及在上述轉印有表面輪廓的絕緣基板的上述剝離面側形成電路。A method for manufacturing a printed wiring board, which comprises the following steps: a metal foil with a release layer in any one of the scope of patent applications 1 to 15 or a metal foil sticker in any of the scope of patent applications 16 to 24 Insulating substrate; the metal foil with release layer or the metal foil is peeled from the insulating substrate without being etched to obtain the metal foil with release layer or the metal foil transferred on the peeling surface An insulating substrate having a surface profile; and forming a circuit on the peeling surface side of the insulating substrate to which the surface profile is transferred. 如申請專利範圍第30項之印刷配線板的製造方法,其中,形成在上述轉印有表面輪廓的絕緣基板的上述剝離面側的電路為鍍敷圖案或印刷圖案。According to the method for manufacturing a printed wiring board according to claim 30, the circuit formed on the peeling surface side of the insulating substrate to which the surface contour is transferred is a plating pattern or a printed pattern. 一種印刷配線板的製造方法,其包含以下步驟:在申請專利範圍第1至15項中任一項之附脫模層金屬箔或申請專利範圍第16至24項中任一項之金屬箔貼合絕緣基板;藉由將上述附脫模層金屬箔或上述金屬箔在不被蝕刻的情況下從上述絕緣基板剝離,而獲得在剝離面轉印有上述附脫模層金屬箔或上述金屬箔之表面輪廓的絕緣基板;及在上述轉印有表面輪廓的絕緣基板的上述剝離面側設置增層。A method for manufacturing a printed wiring board, which comprises the following steps: a metal foil with a release layer in any one of the scope of patent applications 1 to 15 or a metal foil sticker in any of the scope of patent applications 16 to 24 Insulating substrate; the metal foil with release layer or the metal foil is peeled from the insulating substrate without being etched to obtain the metal foil with release layer or the metal foil transferred on the peeling surface An insulating substrate having a surface contour; and an additional layer is provided on the peeling surface side of the insulating substrate to which the surface contour is transferred. 如申請專利範圍第32項之印刷配線板的製造方法,其中,構成上述增層的樹脂包含液晶聚合物、氟樹脂、低介電常數聚醯亞胺、聚苯醚、環烯烴聚合物或聚四氟乙烯。For example, the manufacturing method of a printed wiring board according to item 32 of the application, wherein the resin constituting the build-up layer includes a liquid crystal polymer, a fluororesin, a low dielectric constant polyfluorene imide, a polyphenylene ether, a cycloolefin polymer, or a Tetrafluoroethylene. 一種印刷配線板的製造方法,其包含以下步驟:在申請專利範圍第1至15項中任一項之附脫模層金屬箔或申請專利範圍第16至24項中任一項之金屬箔,從上述脫模層側或上述金屬箔的第二面側貼合絕緣基板1;在積層有上述絕緣基板1的上述附脫模層金屬箔或上述金屬箔的第一面側形成電路;藉由利用絕緣基板2覆蓋上述電路而將上述電路埋入上述絕緣基板2;從上述附脫模層金屬箔或上述金屬箔將上述絕緣基板1剝離而露出上述附脫模層金屬箔或上述金屬箔;及將上述露出的附脫模層金屬箔或上述金屬箔去除。A method for manufacturing a printed wiring board, comprising the following steps: a metal foil with a release layer in any one of the scope of patent applications 1 to 15 or a metal foil in any of the scope of patent applications 16 to 24, The insulating substrate 1 is bonded from the release layer side or the second surface side of the metal foil; the circuit is formed on the first surface side of the metal foil with the release layer or the metal foil laminated with the insulating substrate 1; Covering the circuit with the insulating substrate 2 and burying the circuit in the insulating substrate 2; peeling the insulating substrate 1 from the metal foil with the release layer or the metal foil to expose the metal foil with the release layer or the metal foil; And removing the exposed metal foil with a release layer or the metal foil. 一種印刷配線板的製造方法,其包含以下步驟:在申請專利範圍第1至15項中任一項之附脫模層金屬箔或申請專利範圍第16至24項中任一項之金屬箔,從上述脫模層側或上述金屬箔的第二面側貼合絕緣基板1;在積層有上述絕緣基板1的附脫模層金屬箔或上述金屬箔的第一面側積層乾膜;在將上述乾膜圖案化後,形成電路;將上述乾膜剝離而露出上述電路;藉由利用絕緣基板2覆蓋上述露出的電路而將上述電路埋入在上述絕緣基板2;從上述附脫模層金屬箔或上述金屬箔將上述絕緣基板1剝離而露出上述附脫模層金屬箔或上述金屬箔;及將上述露出的附脫模層金屬箔或上述金屬箔去除。A method for manufacturing a printed wiring board, comprising the following steps: a metal foil with a release layer in any one of the scope of patent applications 1 to 15 or a metal foil in any of the scope of patent applications 16 to 24, The insulating substrate 1 is bonded from the release layer side or the second surface side of the metal foil; a dry film is laminated on the first surface side of the metal foil with a release layer laminated on the insulating substrate 1 or the metal foil; After the dry film is patterned, a circuit is formed; the dry film is peeled to expose the circuit; the circuit is buried in the insulating substrate 2 by covering the exposed circuit with an insulating substrate 2; The foil or the metal foil peels the insulating substrate 1 to expose the metal foil or the metal foil with a release layer; and removes the metal foil or the metal foil with the release layer that is exposed.
TW106145729A 2017-02-02 2017-12-26 Method for manufacturing release foil-attached metal foil, metal foil, laminate, printed wiring board, semiconductor package, electronic device, and printed wiring board TWI660658B (en)

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