TWI625229B - Metal foil, metal foil with release layer, laminate, printed wiring board, semiconductor package, electronic device, and printed wiring board manufacturing method - Google Patents

Metal foil, metal foil with release layer, laminate, printed wiring board, semiconductor package, electronic device, and printed wiring board manufacturing method Download PDF

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TWI625229B
TWI625229B TW105130810A TW105130810A TWI625229B TW I625229 B TWI625229 B TW I625229B TW 105130810 A TW105130810 A TW 105130810A TW 105130810 A TW105130810 A TW 105130810A TW I625229 B TWI625229 B TW I625229B
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metal foil
layer
group
resin
release layer
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TW105130810A
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TW201718257A (en
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Masafumi Ishii
Terumasa Moriyama
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Jx Nippon Mining & Metals Corp
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00Coating not provided for in groups C23C2/00 - C23C24/00
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

本發明提供一種金屬箔,其係藉由於金屬箔設置脫模層而使將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,從而於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以較佳之成本將金屬箔去除,又,可將樹脂成分不同之樹脂彼此以良好之密接性貼合。本發明之金屬箔具有如下之表面輪廓:於對至少一表面放大至倍率3000倍來進行SEM攝影而獲得之照片上描繪直線而對落在直線上之金屬粒子之個數進行計數時,將每10μm長度之直線之粒子數(粒子密度=個/10μm)設為X,將金屬箔表面之粗糙度Rz設為Y,此時下述式(1)滿足2~9。 The present invention provides a metal foil which is physically peeled off when the metal foil is bonded to a resin substrate by providing a release layer of the metal foil, thereby removing the metal foil from the resin substrate. In the step, the metal foil can be removed at a preferred cost without damaging the contour of the surface of the metal foil transferred onto the surface of the resin substrate, and the resins having different resin components can be bonded to each other with good adhesion. . The metal foil of the present invention has a surface profile: when a line is drawn on a photograph obtained by SEM imaging by at least one surface magnified to 3000 times magnification, and the number of metal particles falling on a straight line is counted, The number of particles in a straight line having a length of 10 μm (particle density = one/10 μm) is X, and the roughness Rz of the surface of the metal foil is Y, and the following formula (1) satisfies 2 to 9.

Description

金屬箔、附脫模層之金屬箔、積層體、印刷配線板、半導體封裝、電子機器及印刷配線板之製造方法 Metal foil, metal foil with release layer, laminate, printed wiring board, semiconductor package, electronic device, and printed wiring board manufacturing method

本發明係關於一種金屬箔、附脫模層之金屬箔、積層體、印刷配線板、半導體封裝、電子機器及印刷配線板之製造方法。 The present invention relates to a metal foil, a metal foil with a release layer, a laminate, a printed wiring board, a semiconductor package, an electronic device, and a method of manufacturing a printed wiring board.

印刷配線基板及半導體封裝基板之電路形成工藝方法之主流係減成法,但因近年來進一步之微細配線化,而M-SAP(Modified Semi-Additive Process)、或使用金屬箔之表面輪廓之半加成法等新工藝方法興起。 The mainstream method of forming a circuit for forming a printed wiring board and a semiconductor package substrate is a subtractive method. However, due to further fine wiring in recent years, M-SAP (Modified Semi-Additive Process) or half of the surface outline of a metal foil is used. New process methods such as addition methods have arisen.

該等新電路形成工藝方法中,作為後者之使用金屬箔之表面輪廓之半加成法之一例,列舉如下方法。即,首先,對積層於樹脂基材之金屬箔之整個面進行蝕刻,利用雷射等對轉印有金屬箔表面輪廓之蝕刻基材面進行開孔,施加用以使開孔部導通之無電解鍍銅層,利用乾膜覆蓋無電解鍍銅表面,藉由UV曝光及顯影將電路形成部之乾膜去除,對未被乾膜覆蓋之無電解鍍銅面實施電解鍍銅,將乾膜剝離,最後利用含有硫酸、過氧化氫水之蝕刻液等對無電解鍍銅層進行蝕刻(閃蝕、快速蝕刻),藉此形成微細之電路(專利文獻1、專利文獻2)。 In the new circuit forming process, as an example of the semi-additive method of the surface profile of the metal foil used in the latter, the following method is exemplified. In other words, first, the entire surface of the metal foil laminated on the resin substrate is etched, and the surface of the etched substrate on which the surface contour of the metal foil is transferred is opened by laser or the like, and the opening for conducting the opening is applied. Electrolytic copper plating layer, covering the surface of the electroless copper plating with a dry film, removing the dry film of the circuit forming portion by UV exposure and development, performing electrolytic copper plating on the electroless copper plating surface not covered by the dry film, and drying the film After the peeling, the electroless copper plating layer is etched (flashing, rapid etching) by an etching solution containing sulfuric acid or hydrogen peroxide water, thereby forming a fine circuit (Patent Document 1 and Patent Document 2).

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2006-196863號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-196863

[專利文獻2]日本特開2007-242975號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-242975

然而,習知之使用金屬箔表面之輪廓之半加成法中,關於在不損傷金屬箔表面之輪廓之情況下良好地轉印至樹脂基材之表面之方面、以及以較佳之成本將該金屬箔去除之方面上仍存在研究之餘地。 However, in the semi-additive method using the contour of the surface of the metal foil, the metal is favorably transferred to the surface of the resin substrate without damaging the contour of the surface of the metal foil, and the metal is preferably used at a preferable cost. There is still room for research in terms of foil removal.

又,近年來,對製造將樹脂與樹脂貼合而成之積層體之技術進行了研究、開發。此時,存在樹脂成分不同之情形時無法獲得充分之密接性之情形,必須使單側之樹脂具有凹凸而謀求錨固效應所帶來之密接性提高。於硬化之樹脂表面留下凹凸之方法存在物理加工、化學加工等,但根據樹脂之物理性質或化學性質,存在該等方法不合適之情形。進而,於在該樹脂面積層相同或不同之樹脂之情形時,若該樹脂面之凹凸不合適,則積層後會於該等兩種樹脂間殘留氣泡(空氣蓄積),從而產生外觀不良及兩種樹脂間之密接不良。因此,對於良好地抑制接著之樹脂間之氣泡之產生,並且將樹脂成分不同之樹脂彼此以良好之密接性貼合之技術,亦期待進一步之開發。 In addition, in recent years, research and development of a technique for producing a laminate in which a resin and a resin are bonded together have been studied. In this case, when the resin components are different, sufficient adhesion cannot be obtained, and it is necessary to make the resin on one side have irregularities and to improve the adhesion due to the anchoring effect. There are physical processing, chemical processing, and the like for leaving the unevenness on the surface of the cured resin, but depending on the physical properties or chemical properties of the resin, such methods are not suitable. Further, in the case where the resin area layer is the same or different resin, if the unevenness of the resin surface is not appropriate, bubbles (air accumulation) may remain between the two resins after lamination, resulting in poor appearance and two Poor adhesion between the resins. Therefore, further development is expected in a technique for suppressing the generation of bubbles between the subsequent resins and bonding the resins having different resin components to each other with good adhesion.

本發明人等努力進行研究,結果發現:藉由於具有表面凹凸之金屬箔設置脫模層而使將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,從而於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以較佳之成本將金屬箔去除。進而發現:藉由將與樹脂之密接性良好且具有特定之表面凹凸之金屬箔與樹脂貼合併使其硬化,其後將金屬箔去除,而使凹凸轉印至樹脂表面,藉此,可將樹脂成分不同之樹脂彼此以良好之密接性貼合。 As a result of intensive studies, the present inventors have found that the resin substrate can be physically peeled off when the metal foil is bonded to the resin substrate by providing a release layer on the metal foil having surface irregularities, thereby forming the metal foil. In the step of removing the resin substrate, the metal foil can be removed at a preferable cost without damaging the contour of the surface of the metal foil transferred to the surface of the resin substrate. Further, it has been found that the metal foil having good adhesion to the resin and having specific surface irregularities is bonded to the resin to be cured, and then the metal foil is removed to transfer the unevenness to the surface of the resin. The resins having different resin components are bonded to each other with good adhesion.

基於以上見解而完成之本發明於一態樣中係一種金屬箔,其具有如下之表面輪廓:於對至少一表面放大至倍率3000倍來進行SEM攝影而獲得之照片上描繪直線而對落在上述直線上之金屬粒子之個數進行計數時,將上述直線每10μm長度之粒子數(粒子密度=個/10μm)設為X,將上述金屬箔表面之粗糙度Rz設為Y,此時下述式(1)滿足2~9。 The present invention, which is completed based on the above findings, is a metal foil having a surface profile which is drawn on a photograph obtained by SEM photographing at least one surface to a magnification of 3000 times. When the number of the metal particles on the straight line is counted, the number of particles (particle density = one/10 μm) per 10 μm of the straight line is X, and the roughness Rz of the surface of the metal foil is Y. The formula (1) satisfies 2 to 9.

本發明於另一態樣中係一種金屬箔,其具有如下之表面輪廓:於對至少一表面放大至倍率10000倍來進行SEM攝影而獲得之照片上對可確認之金屬粒子數進行計數時,將每10μm2之粒子數(粒子密度=個/10μm2)設為Z,將上述金屬箔表面之粗糙度Rz設為Y,此時下述式(2)滿足2~16。 In another aspect, the present invention is a metal foil having a surface profile: when the number of identifiable metal particles is counted on a photograph obtained by SEM imaging at least 10,000 times magnification of at least one surface, The number of particles per 10 μm 2 (particle density = /10 μm 2 ) is Z, and the roughness Rz of the surface of the metal foil is Y, and the following formula (2) satisfies 2 to 16.

本發明之金屬箔於一實施形態中,厚度為9~70μm。 In one embodiment, the metal foil of the present invention has a thickness of 9 to 70 μm.

本發明之金屬箔於另一實施形態中,上述金屬箔為銅箔。 In another embodiment of the metal foil of the present invention, the metal foil is a copper foil.

本發明之金屬箔於又一實施形態中,於上述金屬箔之具有表 面輪廓之面設置有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一種以上之層。 In still another embodiment of the metal foil of the present invention, the metal foil has a surface The surface of the surface profile is provided with one or more layers selected from the group consisting of a heat resistant layer, a rust preventive layer, a chromate treated layer, and a decane coupling treatment layer.

本發明之金屬箔於又一實施形態中,於上述選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一種以上之層之表面設置有樹脂層。 In still another embodiment, the metal foil of the present invention is provided with a resin layer on a surface of one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate-treated layer, and a decane coupling treatment layer.

本發明之金屬箔於又一實施形態中,上述樹脂層係接著用樹脂、底塗劑或半硬化狀態之樹脂。 In still another embodiment of the metal foil of the present invention, the resin layer is followed by a resin, a primer, or a resin in a semi-hardened state.

本發明於另一態樣中係一種附脫模層之金屬箔,其具備:本發明之金屬箔;及脫模層,其設置於上述金屬箔之具有表面輪廓之面側,且使自上述脫模層側向上述金屬箔貼合有樹脂基材時之上述樹脂基材可剝離。 In another aspect, the present invention provides a metal foil with a release layer, comprising: a metal foil of the present invention; and a release layer disposed on a surface side of the metal foil having a surface profile, and When the resin layer is bonded to the metal foil on the side of the mold release layer, the resin substrate can be peeled off.

本發明之附脫模層之金屬箔於一實施形態中,上述脫模層係單獨使用或組合使用數種下式所表示之鋁酸鹽化合物、鈦酸鹽化合物、鋯酸鹽化合物、該等之水解生成物、該水解生成物之縮合物而成,(R1)m-M-(R2)n In one embodiment of the metal foil with a release layer of the present invention, the release layer is used alone or in combination of several kinds of aluminate compounds, titanate compounds, zirconates, and the like represented by the following formulas. a hydrolyzate and a condensate of the hydrolyzate, (R 1 ) m -M-(R 2 ) n

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基,M為Al、Ti、Zr中之任一者,n為0、1或2,m為1以上且M之價數以下之整數,至少一個R1為烷氧基;再者,m+n為M之價數,即,於Al之情形時為3,於Ti、Zr之情形時為4)。 (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; Any of the hydrocarbon groups, M is any one of Al, Ti, Zr, n is 0, 1 or 2, m is an integer of 1 or more and a valence of M or less, and at least one R 1 is an alkoxy group; Furthermore, m+n is the valence of M, that is, 3 in the case of Al and 4 in the case of Ti and Zr.

本發明之附脫模層之金屬箔於又一實施形態中,上述脫模層係單獨使用或組合使用數種下式所表示之矽烷化合物、其水解生成物、該水解生成物之縮合物而成, In still another embodiment of the metal foil with a release layer of the present invention, the release layer is used singly or in combination of a plurality of decane compounds represented by the following formula, a hydrolyzed product thereof, and a condensate of the hydrolysis product. to make,

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基,R3及R4分別獨立地為鹵素原子、或烷氧基、或者選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基)。 (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; Any of the hydrocarbon groups in the group, R 3 and R 4 are each independently a halogen atom, or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms Any one of these groups substituted with a halogen atom).

本發明之附脫模層之金屬箔於又一實施形態中,上述脫模層係使用分子內具有2個以下之巰基之化合物而成。 In still another embodiment of the metal foil with a release layer of the present invention, the release layer is formed by using a compound having two or less sulfhydryl groups in the molecule.

本發明之附脫模層之金屬箔於又一實施形態中,於上述脫模層表面設置有樹脂層。 In still another embodiment of the metal foil with a release layer of the present invention, a resin layer is provided on the surface of the release layer.

本發明於又一態樣中係一種積層體,其具備本發明之金屬箔、及樹脂基材。 In still another aspect, the present invention provides a laminate comprising the metal foil of the present invention and a resin substrate.

本發明之積層體於一實施形態中,上述樹脂基材為預浸料,或者包含熱硬化性樹脂。 In one embodiment of the laminate of the present invention, the resin substrate is a prepreg or a thermosetting resin.

本發明於又一態樣中係一種印刷配線板,其具備本發明之金 屬箔或本發明之附脫模層之金屬箔。 In another aspect, the invention is a printed wiring board having the gold of the invention It is a foil or a metal foil with a release layer of the present invention.

本發明於又一態樣中係一種半導體封裝,其具備本發明之印刷配線板。 In another aspect, the present invention is a semiconductor package comprising the printed wiring board of the present invention.

本發明於又一態樣中係一種電子機器,其具備本發明之印刷配線板或本發明之半導體封裝。 In another aspect, the invention is an electronic device comprising the printed wiring board of the invention or the semiconductor package of the invention.

本發明於又一態樣中係一種印刷配線板之製造方法,其具備下述步驟:於本發明之金屬箔或本發明之附脫模層之金屬箔貼合樹脂基材之步驟;藉由不進行蝕刻而將上述金屬箔或上述附脫模層之金屬箔自上述樹脂基材剝離,而獲得於剝離面轉印有上述金屬箔或上述附脫模層之金屬箔之表面輪廓之樹脂基材之步驟;及於上述轉印有表面輪廓之樹脂基材之上述剝離面側形成電路之步驟。 In another aspect, the present invention provides a method of manufacturing a printed wiring board, comprising the steps of: laminating a resin substrate with a metal foil of the present invention or a metal foil with a release layer of the present invention; The metal foil or the metal foil with the release layer is peeled off from the resin substrate without etching, and a resin base obtained by transferring the surface profile of the metal foil or the metal foil with the release layer to the release surface is obtained. And a step of forming a circuit on the peeling surface side of the resin substrate on which the surface profile is transferred.

本發明之印刷配線板之製造方法於一實施形態中,形成於上述轉印有表面輪廓之樹脂基材之上述剝離面側之電路係鍍覆圖案或印刷圖案。 In one embodiment, the method for producing a printed wiring board according to the present invention is a circuit-plated pattern or a printed pattern formed on the peeling surface side of the resin substrate on which the surface profile is transferred.

本發明於又一態樣中係一種印刷配線板之製造方法,其具備下述步驟:於本發明之金屬箔或本發明之附脫模層之金屬箔貼合樹脂基材之步驟;藉由不進行蝕刻而將上述金屬箔或上述附脫模層之金屬箔自上述樹脂基材剝離,而獲得於剝離面轉印有上述金屬箔或上述附脫模層之金屬箔之表面輪廓之樹脂基材之步驟;及於上述轉印有表面輪廓之樹脂基材之上述剝離面側設置增層之步驟。 In another aspect, the present invention provides a method of manufacturing a printed wiring board, comprising the steps of: laminating a resin substrate with a metal foil of the present invention or a metal foil with a release layer of the present invention; The metal foil or the metal foil with the release layer is peeled off from the resin substrate without etching, and a resin base obtained by transferring the surface profile of the metal foil or the metal foil with the release layer to the release surface is obtained. And a step of providing a layer on the side of the peeling surface of the resin substrate on which the surface profile is transferred.

本發明之印刷配線板之製造方法於又一實施形態中,構成上述增層之樹脂含有液晶聚合物或聚四氟乙烯。 In still another embodiment of the method for producing a printed wiring board according to the present invention, the resin constituting the layered layer contains a liquid crystal polymer or polytetrafluoroethylene.

藉由於金屬箔設置脫模層而使將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,從而於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以較佳之成本將金屬箔去除。又,可將樹脂成分不同之樹脂彼此以良好之密接性貼合。 The resin substrate can be physically peeled off by attaching the metal foil to the resin substrate by providing the release layer of the metal foil, so that the step of removing the metal foil from the resin substrate can be performed without damaging the transfer. The metal foil is removed at a preferred cost in the case of the contour of the surface of the metal foil on the surface of the resin substrate. Further, the resins having different resin components can be bonded to each other with good adhesion.

圖1表示使用銅箔之輪廓之半加成法之概略例。 Fig. 1 shows a schematic example of a semi-additive method using a contour of a copper foil.

(金屬箔、附脫模層之金屬箔) (metal foil, metal foil with release layer)

本發明之金屬箔於一態樣中係一種金屬箔,其具有如下之表面輪廓:於對至少一表面、即一表面或兩表面放大至倍率3000倍來進行SEM攝影而獲得之照片上描繪直線而對落在上述直線上之金屬粒子之個數進行計數時,將上述直線每10μm長度之粒子數(粒子密度=個/10μm)設為X,將上述金屬箔表面之粗糙度Rz設為Y,此時下述式(1)滿足2~9。 In one aspect, the metal foil of the present invention is a metal foil having a surface profile: a line drawn on a photograph obtained by SEM imaging at least one surface, that is, one surface or both surfaces is enlarged to a magnification of 3000 times. When the number of metal particles falling on the straight line is counted, the number of particles (particle density = one/10 μm) per 10 μm of the straight line is X, and the roughness Rz of the surface of the metal foil is Y. At this time, the following formula (1) satisfies 2 to 9.

又,本發明之附脫模層之金屬箔具備:上述金屬箔;及脫模層,其設置於上述金屬箔之具有表面輪廓之面側,且使自上述脫模層側向上述金屬箔貼合有樹脂基材時之上述樹脂基材可剝離。 Further, the metal foil with a release layer of the present invention includes: the metal foil; and a release layer provided on a surface side of the metal foil having a surface contour, and the metal foil is attached to the metal foil from the side of the release layer The above resin substrate may be peeled off when the resin substrate is combined.

如此,藉由於金屬箔設置或不設置脫模層而使將該金屬箔貼合於樹脂 基材時之樹脂基材可物理性剝離,從而於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以較佳之成本將金屬箔去除。 Thus, the metal foil is attached to the resin by the metal foil with or without the release layer. The resin substrate at the time of the substrate can be physically peeled off, so that the step of removing the metal foil from the resin substrate can be preferably performed without damaging the contour of the surface of the metal foil transferred to the surface of the resin substrate. The cost is to remove the metal foil.

再者,於本說明書中,所謂「表面」及「金屬箔之表面」,於在金屬箔表面設置有粗化處理層、耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層、脫模層等表面處理層之情形時,係指設置該表面處理層後之表面(最外層之表面)。 In the present specification, the "surface" and the "surface of the metal foil" are provided with a roughened layer, a heat-resistant layer, a rustproof layer, a chromate-treated layer, a decane coupling treatment layer, and a surface of the metal foil. In the case of a surface treatment layer such as a release layer, it means a surface (the outermost surface) after the surface treatment layer is provided.

由於具有於對金屬箔表面放大至倍率3000倍來進行SEM攝影而獲得之照片上描繪直線而對落在上述直線上之金屬粒子之個數進行計數時,將上述直線每10μm長度之粒子數(粒子密度=個/10μm)設為X,將上述金屬箔表面之粗糙度Rz設為Y時,式(1)滿足2~9的表面輪廓,故而具有下述效果:使將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,從而於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以較佳之成本將金屬箔去除,進而,無空隙(或空隙極少)地追隨將該金屬箔剝離後之樹脂基材表面,從而可將電路或樹脂或增層等積層構件以良好之密接性設置於樹脂基材表面。 When the number of metal particles falling on the straight line is counted by drawing a straight line on a photograph obtained by SEM photographing the surface of the metal foil to a magnification of 3000 times, the number of particles per 10 μm in length of the straight line is When the particle density is set to X and the roughness Rz of the surface of the metal foil is Y, the formula (1) satisfies the surface profile of 2 to 9, and therefore has the effect of bonding the metal foil. The resin substrate at the time of the resin substrate can be physically peeled off, so that the step of removing the metal foil from the resin substrate can be performed without damaging the contour of the surface of the metal foil transferred to the surface of the resin substrate. The metal foil is removed at a preferred cost, and the surface of the resin substrate after peeling off the metal foil is carried out without voids (or very few voids), so that a laminated member such as a circuit or a resin or a build-up layer can be provided with good adhesion. Resin substrate surface.

若式(1)未達2,則於將金屬箔與樹脂基材貼合後剝離金屬箔而獲得之樹脂基材表面之凹凸較小,會產生與不同之樹脂之密接性變得不充分之問題,若超過9,則會產生如下問題:將該金屬箔貼合於樹脂基材時之樹脂基材之物理性剝離變難,從而於將金屬箔自樹脂基材去除之步驟中會損傷轉印至樹脂基材之表面之金屬箔表面之輪廓,此外,將金屬箔 剝離後之樹脂基材表面之凹凸形狀過深導致電路或樹脂或增層等積層構件不追隨其凹凸形狀。式(1)較佳為4~8,更佳為5~6。 When the formula (1) is less than 2, when the metal foil is bonded to the resin substrate and the metal foil is peeled off, the surface of the resin substrate obtained has a small unevenness, and the adhesion to the resin is insufficient. When the problem exceeds 9, the problem arises that the physical peeling of the resin substrate when the metal foil is bonded to the resin substrate is difficult, and the metal foil is damaged in the step of removing the metal foil from the resin substrate. The outline of the surface of the metal foil printed on the surface of the resin substrate, in addition, the metal foil The uneven shape of the surface of the resin substrate after peeling is too deep, so that the laminated member such as a circuit or a resin or a build-up layer does not follow the uneven shape. The formula (1) is preferably 4 to 8, more preferably 5 to 6.

又,本發明之金屬箔於另一態樣中係一種金屬箔,其具有如下之表面輪廓:於對至少一表面、即一表面或兩表面放大至倍率10000倍地進行SEM攝影而獲得之照片上對可確認之金屬粒子數進行計數時,將每10μm2之粒子數(粒子密度=個/10μm2)設為Z,將上述金屬箔表面之粗糙度Rz設為Y,此時下述式(2)滿足2~16。 Further, in another aspect, the metal foil of the present invention is a metal foil having a surface profile obtained by performing SEM photography on at least one surface, that is, one surface or both surfaces, to a magnification of 10,000 times. When counting the number of metal particles that can be confirmed, the number of particles per 10 μm 2 (particle density = 10 μm 2 ) is Z, and the roughness Rz of the surface of the metal foil is Y. (2) Meet 2~16.

又,本發明之附脫模層之金屬箔具備:上述金屬箔;及脫模層,其設置於上述金屬箔之具有表面輪廓之面側,且使自上述脫模層側向上述金屬箔貼合有樹脂基材時之上述樹脂基材可剝離。 Further, the metal foil with a release layer of the present invention includes: the metal foil; and a release layer provided on a surface side of the metal foil having a surface contour, and the metal foil is attached to the metal foil from the side of the release layer The above resin substrate may be peeled off when the resin substrate is combined.

再者,於對上述金屬粒子數進行計數時,於不存在粒子形狀者之情形時,設為1個/10μm2。如此,藉由於金屬箔設置或不設置脫模層而使將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,從而於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以較佳之成本將金屬箔去除。 In addition, when counting the number of the metal particles, when there is no particle shape, it is one/10 μm 2 . In this manner, the resin substrate can be physically peeled off when the metal foil is attached to the resin substrate by the metal foil or without the release layer, so that the step of removing the metal foil from the resin substrate can be performed. The metal foil is removed at a preferred cost without damaging the contour of the surface of the metal foil transferred to the surface of the resin substrate.

由於具有於對金屬箔表面放大至倍率10000倍地進行SEM攝影而獲得之照片上對可確認之金屬粒子數進行計數時,將每10μm2之粒子數(粒子密度=個/10μm2)設為Z,將上述金屬箔表面之粗糙度Rz設為Y時,式(2)滿足2~16的表面輪廓,故而具有使將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,從而於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以 較佳之成本將金屬箔去除之效果,進而,無空隙(或空隙極少)地追隨將該金屬箔剝離後之樹脂基材表面,從而可將電路或樹脂或增層等積層構件以良好之密接性設置於樹脂基材表面。 When the number of metal particles that can be confirmed is counted on a photograph obtained by SEM imaging by magnifying the surface of the metal foil to a magnification of 10,000 times, the number of particles per 10 μm 2 (particle density = one/10 μm 2 ) is set. When the roughness Rz of the surface of the metal foil is Y, the formula (2) satisfies the surface profile of 2 to 16, so that the resin substrate can be physically peeled off when the metal foil is bonded to the resin substrate. Therefore, in the step of removing the metal foil from the resin substrate, the effect of removing the metal foil at a preferred cost without damaging the contour of the surface of the metal foil transferred to the surface of the resin substrate, and thus, The surface of the resin substrate after peeling the metal foil is closely followed by the voids (or the voids), so that a laminated member such as a circuit or a resin or a build-up layer can be provided on the surface of the resin substrate with good adhesion.

若式(2)未達2,則於將金屬箔與樹脂基材貼合後剝離金屬箔而獲得之樹脂基材表面之凹凸較小,會產生與不同之樹脂之密接性變得不充分之問題,若超過16,則會產生如下問題:將該金屬箔貼合於樹脂基材時之樹脂基材之物理性剝離變難,從而於將金屬箔自樹脂基材去除之步驟中會損傷轉印至樹脂基材之表面之金屬箔表面之輪廓,此外,將金屬箔剝離後之樹脂基材表面之凹凸形狀過深導致電路或樹脂或增層等積層構件不追隨其凹凸形狀。式(2)較佳為6~12,更佳為8~12。 When the formula (2) is less than 2, when the metal foil is bonded to the resin substrate and the metal foil is peeled off, the unevenness of the surface of the resin substrate is small, and the adhesion to the resin is insufficient. When the problem exceeds 16, the problem arises that the physical peeling of the resin substrate when the metal foil is bonded to the resin substrate is difficult, and the metal foil is damaged in the step of removing the metal foil from the resin substrate. The outline of the surface of the metal foil printed on the surface of the resin substrate, and the uneven shape of the surface of the resin substrate after peeling off the metal foil is too deep, so that the laminated member such as a circuit or a resin or a build-up layer does not follow the uneven shape. The formula (2) is preferably 6 to 12, more preferably 8 to 12.

再者,於本說明書中,所謂「金屬粒子」,可為粗化粒子,亦可為金屬箔之析出面側(無光澤面側)之凸部(例如山狀之凸部)。 In the present specification, the "metal particles" may be roughened particles or may be a convex portion (for example, a mountain-shaped convex portion) on the deposition surface side (matte side) of the metal foil.

再者,脫模層亦可設置於金屬箔之兩面。又,金屬箔與樹脂基材之貼合或積層、及電路或樹脂或增層等積層構件向樹脂基材之積層亦可藉由壓接而進行。 Furthermore, the release layer may also be provided on both sides of the metal foil. Further, lamination or lamination of the metal foil and the resin substrate, and lamination of the laminated member such as a circuit or a resin or a buildup layer to the resin substrate may be performed by pressure bonding.

金屬箔(亦稱作生箔)並無特別限定,可使用銅箔、鋁箔、鎳箔、銅合金箔、鎳合金箔、鋁合金箔、不鏽鋼箔、鐵箔、鐵合金箔等。 The metal foil (also referred to as a green foil) is not particularly limited, and a copper foil, an aluminum foil, a nickel foil, a copper alloy foil, a nickel alloy foil, an aluminum alloy foil, a stainless steel foil, an iron foil, an iron alloy foil, or the like can be used.

金屬箔(生箔)之厚度並無特別限定,例如可設為5~105μm。又,就自樹脂基材之剝離變得容易之方面而言,表面處理銅箔之厚度較佳為9~70μm,更佳為12~35μm,進而更佳為18~35μm。 The thickness of the metal foil (raw foil) is not particularly limited, and can be, for example, 5 to 105 μm. Further, the thickness of the surface-treated copper foil is preferably from 9 to 70 μm, more preferably from 12 to 35 μm, still more preferably from 18 to 35 μm, in terms of easy peeling from the resin substrate.

以下,作為金屬箔(生箔)之例,對銅箔進行說明。作為銅箔(生箔)之製造方法,並無特別限定,例如可以下述之電解條件製作電 解銅箔。 Hereinafter, the copper foil will be described as an example of a metal foil (raw foil). The method for producing the copper foil (raw foil) is not particularly limited, and for example, electricity can be produced by the following electrolysis conditions. Solve copper foil.

電解生箔之電解條件: Electrolytic conditions for electrolytic foil:

電解液組成: Electrolyte composition:

Cu:30~190g/L Cu: 30~190g/L

H2SO4:100~400g/L H 2 SO 4 : 100~400g/L

氯化物離子(Cl-):10~200質量ppm Chloride ion (Cl - ): 10 to 200 ppm by mass

動物膠:1~10ppm Animal glue: 1~10ppm

(視需要之雙(3-磺丙基)二硫醚(SPS):10~100ppm) (Optional bis(3-sulfopropyl) disulfide (SPS): 10~100ppm)

電解液溫度:25~80℃ Electrolyte temperature: 25~80°C

電解時間:10~300秒(根據析出之銅厚、電流密度進行調整) Electrolysis time: 10~300 seconds (adjusted according to copper thickness and current density)

電流密度:50~150A/dm2 Current density: 50~150A/dm 2

電解液線速度:1.5~5m/sec Electrolyte line speed: 1.5~5m/sec

再者,於本說明書中,電解液、鍍覆液、矽烷偶合處理液、形成脫模層之處理中所使用之液體等液體或用於表面處理之處理液之剩餘部分只要未特別記載,則為水。 In addition, in the present specification, the remaining portions of the liquid such as the liquid used in the treatment of forming the release layer by the electrolytic solution, the plating solution, the decane coupling treatment liquid, or the treatment liquid for surface treatment are not particularly described. For water.

由每10μm長度之粒子數(粒子密度=個/10μm)=X、表面之粗糙度Rz=Y所構成之式(1)之√X×Y、及由每10μm2之粒子數(粒子密度=個/10μm2)=Z、表面之粗糙度Rz=Y所構成之式(2)之√Z×Y可藉由上述電解條件進行調整。例如,於相同之箔厚下,若使電解液線速度於上述範圍內增大,則可於不改變X或Z之情況下使Y減小,即,使√X×Y或√Z×Y減小。又,若使氯化物離子濃度於上述範圍內降低並使電流密度於上述範圍內降低,則可於不改變Y之情況下使X或Z減小,即, 使√X×Y或√Z×Y減小。又,若藉由電解時間之調整而僅使箔厚變厚,則可使X或Z減小並使Y增大。又,若使動物膠濃度於上述範圍內增大,則可於不改變X或Z之情況下使Y增大,即,使√X×Y或√Z×Y增大。又,若使動物膠濃度於上述範圍內增大,同時提高電流密度,則可使X、Y、Z均減小,即,使√X×Y或√Z×Y顯著減小。如此,只要根據所要求之剝離性之程度、所要求之與積層構件之密接性而調整各參數即可。 The number of particles per 10 μm length (particle density = one/10 μm) = X, the roughness of the surface Rz = Y, X × Y of the formula (1), and the number of particles per 10 μm 2 (particle density = The √Z×Y of the formula (2) composed of the roughness of the surface λμm 2 )=Z and the surface roughness Rz=Y can be adjusted by the above electrolysis conditions. For example, under the same foil thickness, if the linear velocity of the electrolyte is increased within the above range, Y can be reduced without changing X or Z, that is, √X×Y or √Z×Y Reduced. Further, if the chloride ion concentration is lowered within the above range and the current density is lowered within the above range, X or Z can be made to be reduced without changing Y, that is, √X×Y or √Z× Y decreases. Further, if only the foil thickness is increased by the adjustment of the electrolysis time, X or Z can be decreased and Y can be increased. Further, if the animal gum concentration is increased within the above range, Y can be increased without changing X or Z, that is, √X×Y or √Z×Y can be increased. Further, if the animal gum concentration is increased within the above range and the current density is increased, X, Y, and Z are all reduced, that is, √X×Y or √Z×Y is remarkably reduced. Thus, the parameters may be adjusted in accordance with the degree of peelability required and the required adhesion to the laminated member.

於本發明中,將金屬箔自樹脂基材去除,意指藉由利用蝕刻等之化學處理將金屬箔自樹脂基材去除、或藉由剝離等物理性地將樹脂基材自金屬箔剝離。於如上所述般將樹脂基材於與本發明之金屬箔貼合後去除時,樹脂基材與金屬箔於脫模層分離。此時,於樹脂基材之剝離面亦可殘留有剝離層、下述金屬箔之粗化粒子、耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層等之一部分,但較佳為不存在殘留物。 In the present invention, the removal of the metal foil from the resin substrate means that the metal foil is removed from the resin substrate by chemical treatment such as etching, or the resin substrate is physically peeled off from the metal foil by peeling or the like. When the resin substrate is removed after bonding to the metal foil of the present invention as described above, the resin substrate and the metal foil are separated from the release layer. In this case, a part of the peeling layer, the roughened particles of the following metal foil, the heat-resistant layer, the rust-preventing layer, the chromate-treated layer, and the decane coupling treatment layer may remain on the peeling surface of the resin substrate, but it is preferably In the absence of residue.

關於本發明之附脫模層之金屬箔,較佳為於自脫模層側向金屬箔貼合有樹脂基材時將樹脂基材剝離時之剝離強度為200gf/cm以下。若以此方式進行控制,則樹脂基材之物理性剝離變得容易,金屬箔表面之輪廓被更良好地轉印至樹脂基材。該剝離強度更佳為150gf/cm以下,進而更佳為100gf/cm以下,進而更佳為50gf/cm以下,典型而言為1~200gf/cm,更典型而言為1~150gf/cm。 In the metal foil with a release layer of the present invention, it is preferable that the peeling strength when the resin substrate is peeled off when the resin substrate is bonded to the metal foil from the side of the release layer is 200 gf/cm or less. When the control is carried out in this manner, the physical peeling of the resin substrate becomes easy, and the contour of the surface of the metal foil is more favorably transferred to the resin substrate. The peel strength is more preferably 150 gf/cm or less, still more preferably 100 gf/cm or less, still more preferably 50 gf/cm or less, and typically 1 to 200 gf/cm, and more typically 1 to 150 gf/cm.

繼而,對本發明中可使用之脫模層進行說明。 Next, the release layer which can be used in the present invention will be described.

(1)矽烷化合物 (1) decane compound

藉由單獨使用具有下式所表示之結構之矽烷化合物、或其水解生成物、或該水解生成物之縮合物(以下,簡記為矽烷化合物)或混合使用數 種而形成脫模層,從而於將金屬箔與樹脂基材貼合時,密接性會適度地降低,可將剝離強度調節為上述範圍。 By using a decane compound having a structure represented by the following formula, or a hydrolyzate thereof, or a condensate of the hydrolyzate (hereinafter, abbreviated as a decane compound) or a mixed use number When the metal foil and the resin substrate are bonded together, the adhesion is moderately lowered, and the peel strength can be adjusted to the above range.

式: formula:

(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基,R3及R4分別獨立地為鹵素原子、或烷氧基、或者選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基) (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; Any of the hydrocarbon groups in the group, R 3 and R 4 are each independently a halogen atom, or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms Any one of the groups substituted with a halogen atom)

該矽烷化合物必須具有至少一個烷氧基。於不存在烷氧基而僅由選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基構成取代基之情形時,存在樹脂基材與金屬箔之密接性過度降低之傾向。又,該矽烷化合物必須具有至少一個之選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基。其原因在於:於不存在該烴基之情形時,存在樹脂基材與金屬箔之密接性上升之傾向。再者,烷氧基中亦包含一個以上之氫原子被取代為鹵素原子之烷氧基。 The decane compound must have at least one alkoxy group. Substituting a hydrocarbon group in a group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or a hydrocarbon group in which one or more hydrogen atoms are substituted with a halogen atom, in the absence of an alkoxy group In the case of a base, there is a tendency that the adhesion between the resin substrate and the metal foil is excessively lowered. Further, the decane compound must have at least one hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or any one of the groups in which one or more hydrogen atoms are substituted with a halogen atom. This is because when the hydrocarbon group is not present, the adhesion between the resin substrate and the metal foil tends to increase. Further, the alkoxy group also contains an alkoxy group in which one or more hydrogen atoms are substituted with a halogen atom.

於將樹脂基材與金屬箔之剝離強度調節為上述範圍之方面而言,該矽烷化合物較佳為具有三個烷氧基、一個上述烴基(包含一個以 上之氫原子被取代為鹵素原子之烴基)。若以上式言此,則係指R3及R4兩者為烷氧基。 In order to adjust the peeling strength of the resin substrate and the metal foil to the above range, the decane compound preferably has three alkoxy groups and one of the above hydrocarbon groups (hydrocarbon groups containing one or more hydrogen atoms substituted with a halogen atom) ). In the above formula, it is meant that both R 3 and R 4 are alkoxy groups.

作為烷氧基,並無限定,可列舉:甲氧基、乙氧基、正或異丙氧基、正、異或第三丁氧基、正、異或新戊氧基、正己氧基、環己氧基、正庚氧基、及正辛氧基等直鏈狀、支鏈狀、或環狀之碳數1~20、較佳為碳數1~10、更佳為碳數1~5之烷氧基。 The alkoxy group is not limited, and examples thereof include a methoxy group, an ethoxy group, a normal or isopropoxy group, a n-, iso- or tert-butoxy group, a n-, iso- or neopentyloxy group, and a n-hexyloxy group. The linear, branched or cyclic carbon number such as cyclohexyloxy, n-heptyloxy and n-octyloxy is 1 to 20, preferably 1 to 10, more preferably 1 to carbon. 5 alkoxy groups.

作為鹵素原子,可列舉:氟原子、氯原子、溴原子及碘原子。 Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

作為烷基,並無限定,可列舉:甲基、乙基、正或異丙基、正、異或第三丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀之碳數1~20、較佳為碳數1~10、更佳為碳數1~5之烷基。 The alkyl group is not limited and may, for example, be a methyl group, an ethyl group, a normal or an isopropyl group, a normal or an isobutyl group, a n-, iso- or neopentyl group, a n-hexyl group, an n-octyl group or a n-decyl group. The linear or branched carbon number is from 1 to 20, preferably from 1 to 10 carbon atoms, more preferably from 1 to 5 carbon atoms.

作為環烷基,並無限定,可列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7之環烷基。 The cycloalkyl group is not limited, and examples thereof include a carbon number of 3 to 10, preferably a carbon number of 5 to 7 such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group or a cyclooctyl group. Cycloalkyl.

作為芳基,可列舉苯基、經烷基取代之苯基(例:甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14之芳基。 Examples of the aryl group include a phenyl group, an alkyl group-substituted phenyl group (for example, tolyl group, xylyl group), a 1- or 2-naphthyl group, and a fluorenyl group having 6 to 20 carbon atoms, preferably 6 to 14 carbon atoms. The aryl group.

該等烴基之一個以上之氫原子亦可被取代為鹵素原子,例如可被取代為氟原子、氯原子、或溴原子。 One or more hydrogen atoms of the hydrocarbon groups may be substituted with a halogen atom, and for example, may be substituted with a fluorine atom, a chlorine atom, or a bromine atom.

作為較佳之矽烷化合物之例,可列舉:甲基三甲氧基矽烷、乙基三甲氧基矽烷、正或異丙基三甲氧基矽烷、正、異或第三丁基三甲氧基矽烷、正、異或新戊基三甲氧基矽烷、己基三甲氧基矽烷、辛基三甲氧基矽烷、癸基三甲氧基矽烷、苯基三甲氧基矽烷;烷基取代苯基三甲氧基矽烷(例如對(甲基)苯基三甲氧基矽烷)、甲基三乙氧基矽烷、乙基三乙氧基矽烷、正或異丙基三乙氧基矽烷、正、異或第三丁基三乙氧基矽烷、 戊基三乙氧基矽烷、己基三乙氧基矽烷、辛基三乙氧基矽烷、癸基三乙氧基矽烷、苯基三乙氧基矽烷、烷基取代苯基三乙氧基矽烷(例如對(甲基)苯基三乙氧基矽烷)、(3,3,3-三氟丙基)三甲氧基矽烷、及十三氟辛基三乙氧基矽烷、甲基三氯矽烷、二甲基二氯矽烷、三甲基氯矽烷、苯基三氯矽烷、三甲基氟矽烷、二甲基二溴矽烷、二苯基二溴矽烷、該等之水解生成物、及該等之水解生成物之縮合物等。該等中,就獲取之容易性之觀點而言,較佳為丙基三甲氧基矽烷、甲基三乙氧基矽烷、己基三甲氧基矽烷、苯基三乙氧基矽烷、癸基三甲氧基矽烷。 Preferred examples of the decane compound include methyltrimethoxydecane, ethyltrimethoxydecane, n- or isopropyltrimethoxynonane, n-, iso- or tert-butyltrimethoxydecane, and Iso- or neopentyltrimethoxydecane, hexyltrimethoxydecane, octyltrimethoxydecane, decyltrimethoxydecane, phenyltrimethoxydecane;alkyl-substituted phenyltrimethoxynonane (for example, Methyl)phenyltrimethoxydecane), methyltriethoxydecane, ethyltriethoxydecane, n- or isopropyltriethoxydecane, n-, iso- or tert-butyltriethoxy Decane, Butyl triethoxy decane, hexyl triethoxy decane, octyl triethoxy decane, decyl triethoxy decane, phenyl triethoxy decane, alkyl substituted phenyl triethoxy decane ( For example, p-(methyl)phenyltriethoxydecane), (3,3,3-trifluoropropyl)trimethoxynonane, and tridecafluorooctyltriethoxydecane, methyltrichlorodecane, Dimethyldichlorodecane, trimethylchlorodecane, phenyltrichlorodecane, trimethylfluorodecane, dimethyldibromodecane, diphenyldibromodecane, hydrolyzed products thereof, and the like A condensate of a hydrolyzed product or the like. Among these, from the viewpoint of easiness of obtaining, propyltrimethoxydecane, methyltriethoxydecane, hexyltrimethoxydecane, phenyltriethoxydecane, decyltrimethoxy is preferred. Base decane.

於脫模層之形成步驟中,矽烷化合物可以水溶液之形態進行使用。為了提高對水之溶解性,亦可添加甲醇或乙醇等醇。醇之添加於使用疏水性較高之矽烷化合物時尤其有效。矽烷化合物之水溶液藉由進行攪拌而促進烷氧基之水解,若攪拌時間較長,則會促進水解生成物之縮合。通常,於使用經過充分之攪拌時間而使水解及縮合充分進行之矽烷化合物時,存在樹脂基材與金屬箔之剝離強度降低之傾向。因此,可藉由攪拌時間之調整而調整剝離強度。作為使矽烷化合物溶解於水中後之攪拌時間並無限定,例如可設為1~100小時,典型而言可設為1~30小時。當然,亦存在不進行攪拌而使用之方法。 In the step of forming the release layer, the decane compound can be used in the form of an aqueous solution. In order to improve the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of an alcohol is particularly effective when a highly hydrophobic decane compound is used. The aqueous solution of the decane compound promotes hydrolysis of the alkoxy group by stirring, and if the stirring time is long, the condensation of the hydrolyzate is promoted. In general, when a decane compound which is sufficiently subjected to hydrolysis and condensation after a sufficient stirring time is used, the peel strength of the resin substrate and the metal foil tends to decrease. Therefore, the peel strength can be adjusted by adjusting the stirring time. The stirring time after dissolving the decane compound in water is not limited, and may be, for example, 1 to 100 hours, and typically 1 to 30 hours. Of course, there is also a method of using without stirring.

於矽烷化合物在水溶液中之矽烷化合物之濃度較高時,存在金屬箔與板狀載體之剝離強度降低之傾向,可藉由矽烷化合物之濃度調整來調整剝離強度。矽烷化合物於水溶液中之濃度並無限定,可設為0.01~10.0體積%,典型而言可設為0.1~5.0體積%。 When the concentration of the decane compound in the aqueous solution is high, the peel strength of the metal foil and the plate-shaped carrier tends to decrease, and the peel strength can be adjusted by adjusting the concentration of the decane compound. The concentration of the decane compound in the aqueous solution is not limited, and may be 0.01 to 10.0% by volume, and typically 0.1 to 5.0% by volume.

矽烷化合物之水溶液之pH並無特別限制,於酸性側或鹼性 側均可利用。例如可以3.0~10.0之範圍之pH進行使用。就無需進行特別之pH調整之觀點而言,較佳為設為中性附近之5.0~9.0之範圍之pH,更佳為設為7.0~9.0之範圍之pH。 The pH of the aqueous solution of the decane compound is not particularly limited, and is acidic or alkaline. Both sides can be used. For example, it can be used at a pH in the range of 3.0 to 10.0. From the viewpoint of not requiring special pH adjustment, it is preferably a pH in the range of 5.0 to 9.0 in the vicinity of neutrality, and more preferably a pH in the range of 7.0 to 9.0.

(2)分子內具有2個以下之巰基之化合物 (2) Compounds having two or less sulfhydryl groups in the molecule

脫模層係使用分子內具有2個以下之巰基之化合物而構成,即便藉由介隔該脫模層將樹脂基材與金屬箔貼合,而密接性亦會適度地降低,可調節剝離強度。 The release layer is composed of a compound having two or less sulfhydryl groups in the molecule, and even if the resin substrate is bonded to the metal foil by interposing the release layer, the adhesion is appropriately lowered, and the peel strength can be adjusted.

但是,於使分子內具有3個以上之巰基之化合物或其鹽介存於樹脂基材與金屬箔之間而將其等貼合之情形時,不符合降低剝離強度之目的。認為其原因在於:若分子內存在過量之巰基,則存在藉由巰基彼此、或巰基與板狀載體、或巰基與金屬箔之化學反應而過量地生成硫鍵、雙硫鍵或多硫鍵,於樹脂基材與金屬箔之間形成牢固之三維交聯結構,藉此剝離強度上升之情形。此種事例揭示於日本特開2000-196207號公報中。 However, when a compound having three or more mercapto groups in the molecule or a salt thereof is interposed between the resin substrate and the metal foil and bonded thereto, the peel strength is not satisfied. The reason is considered to be that if there are excessive sulfhydryl groups in the molecule, there are excessively generated sulfur bonds, disulfide bonds or polysulfide bonds by chemical reaction of sulfhydryl groups with each other, or sulfhydryl groups and plate-shaped carriers, or sulfhydryl groups and metal foils. A strong three-dimensional crosslinked structure is formed between the resin substrate and the metal foil, whereby the peel strength is increased. Such an example is disclosed in Japanese Laid-Open Patent Publication No. 2000-196207.

作為該分子內具有2個以下之巰基之化合物,可列舉:硫醇、二硫醇、硫羧酸或其鹽、二硫羧酸或其鹽、硫磺酸或其鹽、及二硫磺酸或其鹽,可使用選自該等中之至少一種。 Examples of the compound having two or less mercapto groups in the molecule include a mercaptan, a dithiol, a sulfuric acid or a salt thereof, a dithiocarboxylic acid or a salt thereof, sulfuric acid or a salt thereof, and disulfuric acid or As the salt, at least one selected from the group consisting of these can be used.

硫醇係分子內具有一個巰基者,例如由R-SH表示。此處,R表示亦可包含羥基或胺基之脂肪族系或芳香族系烴基或者雜環基。 A thiol group having a fluorenyl group in the molecule is represented, for example, by R-SH. Here, R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may further contain a hydroxyl group or an amine group.

二硫醇係分子內具有兩個巰基者,例如由R(SH)2表示。R表示亦可包含羥基或胺基之脂肪族系或芳香族系烴基或者雜環基。又,兩個巰基可分別鍵結於相同之碳,亦可鍵結於互相不同之碳或氮。 The dithiol type has two indenyl groups in the molecule, and is represented, for example, by R(SH) 2 . R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may further contain a hydroxyl group or an amine group. Further, the two sulfhydryl groups may be bonded to the same carbon, respectively, or may be bonded to carbon or nitrogen which are different from each other.

硫羧酸係有機羧酸之羥基被取代為巰基者,例如由R-CO -SH表示。R表示亦可包含羥基或胺基之脂肪族系或芳香族系烴基或者雜環基。又,硫羧酸亦可以鹽之形態進行使用。再者,亦可使用具有兩個硫羧酸基之化合物。 The hydroxy group of the carboxylic acid-based organic carboxylic acid is substituted with a fluorenyl group, for example, by R-CO -SH said. R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may further contain a hydroxyl group or an amine group. Further, the sulfuric acid can also be used in the form of a salt. Further, a compound having two thiocarboxylic acid groups can also be used.

二硫羧酸係有機羧酸之羧基中之2個氧原子被取代為硫原子者,例如由R-(CS)-SH表示。R表示亦可包含羥基或胺基之脂肪族系或芳香族系烴基或者雜環基。又,二硫羧酸亦可以鹽之形態進行使用。再者,亦可使用具有兩個二硫羧酸基之化合物。 The two oxygen atoms in the carboxyl group of the dithiocarboxylic acid-based organic carboxylic acid are substituted with a sulfur atom, and are represented, for example, by R-(CS)-SH. R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may further contain a hydroxyl group or an amine group. Further, the dithiocarboxylic acid can also be used in the form of a salt. Further, a compound having two dithiocarboxylic acid groups can also be used.

硫磺酸係有機磺酸之羥基被取代為巰基者,例如由R(SO2)-SH表示。R表示亦可包含羥基或胺基之脂肪族系或芳香族系烴基或者雜環基。又,硫磺酸亦可以鹽之形態進行使用。 The hydroxyl group of the sulfuric acid-based organic sulfonic acid is substituted with a fluorenyl group, and is represented, for example, by R(SO 2 )-SH. R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may further contain a hydroxyl group or an amine group. Further, sulfuric acid can also be used in the form of a salt.

二硫磺酸係有機二磺酸之兩個羥基分別被取代為巰基者,例如由R-((SO2)-SH)2表示。R表示亦可包含羥基或胺基之脂肪族系或芳香族系烴基或者雜環基。又,兩個硫磺酸基可分別鍵結於相同之碳,亦可鍵結於互相不同之碳。又,二硫磺酸亦可以鹽之形態進行使用。 The two hydroxyl groups of the disulfonic acid-based organic disulfonic acid are each substituted with a fluorenyl group, for example, represented by R-((SO 2 )-SH) 2 . R represents an aliphatic or aromatic hydrocarbon group or a heterocyclic group which may further contain a hydroxyl group or an amine group. Further, the two sulfonic acid groups may be bonded to the same carbon, respectively, or may be bonded to carbons different from each other. Further, disulfuric acid can also be used in the form of a salt.

此處,作為有關R之較佳之脂肪族系烴基,可列舉:烷基、環烷基,該等烴基可包含羥基與胺基之任一者或兩者。 Here, as the preferred aliphatic hydrocarbon group for R, an alkyl group or a cycloalkyl group may be mentioned, and the hydrocarbon group may include either or both of a hydroxyl group and an amine group.

又,作為烷基,並無限定,可列舉:甲基、乙基、正或異丙基、正、異或第三丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀之碳數1~20、較佳為碳數1~10、更佳為碳數1~5之烷基。 Further, the alkyl group is not limited, and examples thereof include a methyl group, an ethyl group, a normal or an isopropyl group, a normal or an isobutyl group, a normal or an iso-pentyl group, a n-hexyl group, a n-octyl group, and a positive group. The linear or branched carbon number such as a mercapto group is 1 to 20, preferably a carbon number of 1 to 10, more preferably an alkyl group having 1 to 5 carbon atoms.

又,作為環烷基,並無限定,可列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7之環烷基。 Further, the cycloalkyl group is not limited, and examples thereof include a carbon number of 3 to 10, preferably a carbon number of 5 to 10, such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group or a cyclooctyl group. 7 cycloalkyl.

又,作為有關R之較佳之芳香族烴基,可列舉:苯基、經 烷基取代之苯基(例:甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14之芳基,該等烴基可包含羥基與胺基之任一者或兩者。 Further, as a preferred aromatic hydrocarbon group for R, a phenyl group, a An alkyl-substituted phenyl group (for example, tolyl, xylyl), 1- or 2-naphthyl, an anthracenyl group or the like having 6 to 20 carbon atoms, preferably 6 to 14 aryl groups, and the hydrocarbon groups may contain a hydroxyl group. Either or both of the amine groups.

又,作為有關R之較佳之雜環基,可列舉:咪唑、三唑、四唑、苯并咪唑、苯并三唑、噻唑、苯并噻唑,可包含羥基與胺基之任一者或兩者。 Further, as a preferred heterocyclic group for R, there may be mentioned imidazole, triazole, tetrazole, benzimidazole, benzotriazole, thiazole, benzothiazole, and may contain either or both of a hydroxyl group and an amine group. By.

作為分子內具有2個以下之巰基之化合物之較佳之例,可列舉:3-巰基-1,2-丙二醇、2-巰基乙醇、1,2-乙二硫醇、6-巰基-1-己醇、1-辛硫醇、1-十二烷硫醇、10-羥基-1-十二烷硫醇、10-羧基-1-十二烷硫醇、10-胺基-1-十二烷硫醇、1-十二烷硫醇磺酸鈉、苯硫酚、硫代苯甲酸、4-胺基苯硫酚、對甲苯硫醇、2,4-二甲基苯硫醇、3-巰基-1,2,4-三唑、2-巰基苯并噻唑。該等中,就水溶性與廢棄物處理上之觀點而言,較佳為3-巰基-1,2-丙二醇。 Preferred examples of the compound having two or less mercapto groups in the molecule include 3-mercapto-1,2-propanediol, 2-mercaptoethanol, 1,2-ethanedithiol, and 6-mercapto-1-hexa Alcohol, 1-octyl mercaptan, 1-dodecanethiol, 10-hydroxy-1-dodecanethiol, 10-carboxy-1-dodecanethiol, 10-amino-1-dodecane Mercaptan, sodium 1-dodecyl mercaptan sulfonate, thiophenol, thiobenzoic acid, 4-amino thiophenol, p-toluene thiol, 2,4-dimethyl benzene thiol, 3-mercapto -1,2,4-triazole, 2-mercaptobenzothiazole. Among these, from the viewpoint of water solubility and waste treatment, 3-mercapto-1,2-propanediol is preferred.

於脫模層之形成步驟中,分子內具有2個以下之巰基之化合物可以水溶液之形態進行使用。為了提高對水之溶解性,亦可添加甲醇或乙醇等醇。醇之添加於使用疏水性較高之分子內具有2個以下之巰基之化合物時尤其有效。 In the step of forming the release layer, a compound having two or less mercapto groups in the molecule can be used in the form of an aqueous solution. In order to improve the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of an alcohol is particularly effective when a compound having two or less mercapto groups in a molecule having high hydrophobicity is used.

分子內具有2個以下之巰基之化合物於水溶液中之濃度較高時,存在樹脂基材與金屬箔之剝離強度降低之傾向,可藉由調整分子內具有2個以下之巰基之化合物之濃度而調整剝離強度。分子內具有2個以下之巰基之化合物之水溶液中之濃度並無限定,可設為0.01~10.0重量%,典型而言可設為0.1~5.0重量%。 When the concentration of the compound having two or less sulfhydryl groups in the molecule is high in the aqueous solution, the peel strength of the resin substrate and the metal foil tends to decrease, and the concentration of the compound having two or less sulfhydryl groups in the molecule can be adjusted. Adjust the peel strength. The concentration in the aqueous solution of the compound having two or less sulfhydryl groups in the molecule is not limited, and may be 0.01 to 10.0% by weight, and typically 0.1 to 5.0% by weight.

分子內具有2個以下之巰基之化合物之水溶液之pH並無特 別限制,於酸性側或鹼性側均可利用。例如可以3.0~10.0之範圍之pH進行使用。就無需進行特別之pH調整之觀點而言,較佳為設為中性附近之5.0~9.0之範圍之pH,更佳為設為7.0~9.0之範圍之pH。 The pH of the aqueous solution of the compound having 2 or less sulfhydryl groups in the molecule is not particularly It is not limited and can be used on the acidic side or the alkaline side. For example, it can be used at a pH in the range of 3.0 to 10.0. From the viewpoint of not requiring special pH adjustment, it is preferably a pH in the range of 5.0 to 9.0 in the vicinity of neutrality, and more preferably a pH in the range of 7.0 to 9.0.

(3)金屬烷氧化物 (3) Metal alkoxide

可單獨使用或混合使用數種具有下式所表示之結構之鋁酸鹽化合物、鈦酸鹽化合物、鋯酸鹽化合物、或其水解生成物、或該水解生成物之縮合物(以下,簡記為金屬烷氧化物)而構成脫模層。藉由介隔該脫模層將樹脂基材與金屬箔貼合,而使密接性適度地降低,可調節剝離強度。 The aluminate compound, the titanate compound, the zirconate compound, or the hydrolyzate thereof, or the condensate of the hydrolyzate may be used alone or in combination (hereinafter, abbreviated as The metal alkoxide) constitutes a release layer. The resin substrate and the metal foil are bonded to each other by interposing the release layer, whereby the adhesion is appropriately lowered, and the peel strength can be adjusted.

(R1)m-M-(R2)n (R 1 ) m -M-(R 2 ) n

式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基,M為Al、Ti、Zr中之任一者,n為0、1或2,m為1以上且M之價數以下之整數,至少一個R1為烷氧基。再者,m+n為M之價數,即,於Al之情形時為3,於Ti、Zr之情形時為4。 Wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or a group in which one or more hydrogen atoms are substituted with a halogen atom Any one of the hydrocarbon groups, M is any one of Al, Ti, and Zr, n is 0, 1 or 2, m is an integer of 1 or more and a valence of M or less, and at least one R 1 is an alkoxy group. Furthermore, m+n is the valence of M, that is, 3 in the case of Al and 4 in the case of Ti and Zr.

該金屬烷氧化物必須具有至少一個烷氧基。於不存在烷氧基而僅由選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基構成取代基之情形時,存在樹脂基材與金屬箔之密接性過度降低之傾向。又,該金屬烷氧化物必須具有0~2個選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基。其原因在於:於具有3 個以上之該烴基之情形時,存在樹脂基材與金屬箔之密接性過度降低之傾向。再者,烷氧基中亦包含一個以上之氫原子被取代為鹵素原子之烷氧基。於將樹脂基材與金屬箔之剝離強度調節為上述範圍之方面而言,該金屬烷氧化物較佳為具有兩個以上之烷氧基、一個或兩個上述烴基(包含一個以上之氫原子被取代為鹵素原子之烴基)。 The metal alkoxide must have at least one alkoxy group. Substituting a hydrocarbon group in a group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or a hydrocarbon group in which one or more hydrogen atoms are substituted with a halogen atom, in the absence of an alkoxy group In the case of a base, there is a tendency that the adhesion between the resin substrate and the metal foil is excessively lowered. Further, the metal alkoxide must have any one of 0 to 2 hydrocarbon groups selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms substituted with a halogen atom. a hydrocarbon group. The reason is: with 3 In the case of the above hydrocarbon group, the adhesion between the resin substrate and the metal foil tends to be excessively lowered. Further, the alkoxy group also contains an alkoxy group in which one or more hydrogen atoms are substituted with a halogen atom. The metal alkoxide preferably has two or more alkoxy groups, one or two of the above hydrocarbon groups (containing one or more hydrogen atoms) in terms of adjusting the peeling strength of the resin substrate and the metal foil to the above range. A hydrocarbon group substituted with a halogen atom).

又,作為烷基,並無限定,可列舉:甲基、乙基、正或異丙基、正、異或第三丁基、正、異或新戊基、正己基、正辛基、正癸基等直鏈狀或支鏈狀之碳數1~20、較佳為碳數1~10、更佳為碳數1~5之烷基。 Further, the alkyl group is not limited, and examples thereof include a methyl group, an ethyl group, a normal or an isopropyl group, a normal or an isobutyl group, a normal or an iso-pentyl group, a n-hexyl group, a n-octyl group, and a positive group. The linear or branched carbon number such as a mercapto group is 1 to 20, preferably a carbon number of 1 to 10, more preferably an alkyl group having 1 to 5 carbon atoms.

又,作為環烷基,並無限定,可列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基等碳數3~10、較佳為碳數5~7之環烷基。 Further, the cycloalkyl group is not limited, and examples thereof include a carbon number of 3 to 10, preferably a carbon number of 5 to 10, such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group or a cyclooctyl group. 7 cycloalkyl.

又,作為有關R2之較佳之芳香族烴基,可列舉:苯基、經烷基取代之苯基(例:甲苯基、二甲苯基)、1-或2-萘基、蒽基等碳數6~20、較佳為6~14之芳基,該等烴基可包含羥基與胺基之任一者或兩者。該等烴基之一個以上之氫原子亦可被取代為鹵素原子,例如可被取代為氟原子、氯原子、或溴原子。 Further, examples of the preferred aromatic hydrocarbon group for R 2 include a phenyl group, an alkyl group-substituted phenyl group (for example, a tolyl group, a xylyl group), a 1- or 2-naphthyl group, and a fluorenyl group. 6 to 20, preferably 6 to 14 aryl groups, which may comprise either or both of a hydroxyl group and an amine group. One or more hydrogen atoms of the hydrocarbon groups may be substituted with a halogen atom, and for example, may be substituted with a fluorine atom, a chlorine atom, or a bromine atom.

作為較佳之鋁酸鹽化合物之例,可列舉:三甲氧基鋁、甲基二甲氧基鋁、乙基二甲氧基鋁、正或異丙基二甲氧基鋁、正、異或第三丁基二甲氧基鋁、正、異或新戊基二甲氧基鋁、己基二甲氧基鋁、辛基二甲氧基鋁、癸基二甲氧基鋁、苯基二甲氧基鋁;烷基取代苯基二甲氧基鋁(例如對(甲基)苯基二甲氧基鋁)、二甲基甲氧基鋁、三乙氧基鋁、甲基二乙氧基鋁、乙基二乙氧基鋁、正或異丙基二乙氧基鋁、正、異或第三丁基二乙氧基鋁、戊基二乙氧基鋁、己基二乙氧基鋁、辛基二乙氧基鋁、癸基二 乙氧基鋁、苯基二乙氧基鋁、烷基取代苯基二乙氧基鋁(例如對(甲基)苯基二乙氧基鋁)、二甲基乙氧基鋁、三異丙氧基鋁、甲基二異丙氧基鋁、乙基二異丙氧基鋁、正或異丙基二乙氧基鋁、正、異或第三丁基二異丙氧基鋁、戊基二異丙氧基鋁、己基二異丙氧基鋁、辛基二異丙氧基鋁、癸基二異丙氧基鋁、苯基二異丙氧基鋁、烷基取代苯基二異丙氧基鋁(例如對(甲基)苯基二異丙氧基鋁)、二甲基異丙氧基鋁、(3,3,3-三氟丙基)二甲氧基鋁、及十三氟辛基二乙氧基鋁、甲基二氯鋁、二甲基氯鋁、二甲基氯鋁、苯基二氯鋁、二甲基氟鋁、二甲基溴鋁、二苯基溴鋁、該等之水解生成物、及該等之水解生成物之縮合物等。該等中,就獲取之容易性之觀點而言,較佳為三甲氧基鋁、三乙氧基鋁、三異丙氧基鋁。 Examples of preferred aluminate compounds include trimethoxy aluminum, methyl dimethoxy aluminum, ethyl dimethoxy aluminum, n- or isopropyl dimethoxy aluminum, ortho, x or Tributyldimethoxyaluminum, n-, iso- or neopentyldimethoxyaluminum, hexyldimethoxyaluminum, octyldimethoxyaluminum, decyldimethoxyaluminum, phenyldimethoxy Aluminium-substituted phenyldimethoxyaluminum (for example, p-(methyl)phenyldimethoxyaluminum), dimethylmethoxyaluminum, triethoxyaluminum, methyldiethoxyaluminum , ethyldiethoxyaluminum, n- or isopropyldiethoxyaluminum, n-, iso- or tert-butyldiethoxyaluminum, pentyldiethoxyaluminum, hexyldiethoxyaluminum, octyl Diethoxy aluminum, sulfhydryl Aluminum ethoxylate, phenyldiethoxyaluminum, alkyl substituted phenyldiethoxyaluminum (for example, p-(methyl)phenyldiethoxyaluminum), dimethylethoxyaluminum, triisopropyl Aluminium oxy, methyl diisopropoxy aluminum, ethyl aluminum diisopropoxide, n- or isopropyl diethoxy aluminum, n-, iso- or tert-butyl diisopropoxy aluminum, pentyl Aluminum diisopropoxide, aluminum hexyl diisopropoxide, aluminum octyl diisopropoxide, aluminum decyl diisopropoxide, aluminum phenyl diisopropoxide, alkyl substituted phenyl diisopropyl Aluminium oxide (for example, p-(methyl)phenyl diisopropoxy aluminum), dimethyl isopropoxide aluminum, (3,3,3-trifluoropropyl)dimethoxy aluminum, and thirteen Fluorooctyldiethoxyaluminum, methyldichloroaluminum, dimethylchloroaluminum, dimethylchloroaluminum, phenyldichloroaluminum, dimethylfluoroaluminum, dimethylbromoaluminum, diphenylbromoaluminum And the hydrolyzed product, the condensate of the hydrolyzed product, and the like. Among these, from the viewpoint of easiness of acquisition, trimethoxy aluminum, triethoxy aluminum, and aluminum triisopropoxide are preferred.

作為較佳之鈦酸鹽化合物之例,可列舉:四甲氧基鈦、甲基三甲氧基鈦、乙基三甲氧基鈦、正或異丙基三甲氧基鈦、正、異或第三丁基三甲氧基鈦、正、異或新戊基三甲氧基鈦、己基三甲氧基鈦、辛基三甲氧基鈦、癸基三甲氧基鈦、苯基三甲氧基鈦;烷基取代苯基三甲氧基鈦(例如對(甲基)苯基三甲氧基鈦)、二甲基二甲氧基鈦、四乙氧基鈦、甲基三乙氧基鈦、乙基三乙氧基鈦、正或異丙基三乙氧基鈦、正、異或第三丁基三乙氧基鈦、戊基三乙氧基鈦、己基三乙氧基鈦、辛基三乙氧基鈦、癸基三乙氧基鈦、苯基三乙氧基鈦、烷基取代苯基三乙氧基鈦(例如對(甲基)苯基三乙氧基鈦)、二甲基二乙氧基鈦、四異丙氧基鈦、甲基三異丙氧基鈦、乙基三異丙氧基鈦、正或異丙基三乙氧基鈦、正、異或第三丁基三異丙氧基鈦、戊基三異丙氧基鈦、己基三異丙氧基鈦、辛基三異丙氧基鈦、癸基三異丙氧基鈦、苯基三異丙氧基鈦、烷基取代苯基三異丙氧基鈦(例如對 (甲基)苯基三異丙氧基鈦)、二甲基二異丙氧基鈦、(3,3,3-三氟丙基)三甲氧基鈦、及十三氟辛基三乙氧基鈦、甲基三氯鈦、二甲基二氯鈦、三甲基氯鈦、苯基三氯鈦、二甲基二氟鈦、二甲基二溴鈦、二苯基二溴鈦、該等之水解生成物、及該等之水解生成物之縮合物等。該等中,就獲取之容易性之觀點而言,較佳為四甲氧基鈦、四乙氧基鈦、四異丙氧基鈦。 Examples of preferred titanate compounds include tetramethoxytitanium, methyltrimethoxytitanium, ethyltrimethoxytitanium, n- or isopropyltrimethoxytitanium, n-, iso- or tert-butyl Titanium trimethoxy, n-, iso- or neopentyltrimethoxytitanium, hexyltrimethoxytitanium, octyltrimethoxytitanium, decyltrimethoxytitanium, phenyltrimethoxytitanium; alkyl substituted phenyl Trimethoxytitanium (for example, p-(meth)phenyltrimethoxytitanium), dimethyldimethoxytitanium, tetraethoxytitanium, methyltriethoxytitanium, ethyltriethoxytitanium, Ortho- or isopropyl triethoxytitanium, n-, iso- or tert-butyltriethoxytitanium, pentyltriethoxytitanium, hexyltriethoxytitanium, octyltriethoxytitanium, fluorenyl Triethoxytitanium, phenyltriethoxytitanium, alkyl substituted phenyltriethoxytitanium (for example, p-(meth)phenyltriethoxytitanium), dimethyldiethoxytitanium, tetra Titanium isopropoxide, titanium methyl triisopropoxide, titanium triisopropoxide, titanium or n-butyl triethoxyoxide, n-, iso- or tert-butyl triisopropoxide titanium, Pentyl triisopropoxy titanium, hexyl triisopropoxy , Titanium triisopropoxide octyl, decyl titanium triisopropoxide, phenyl titanium triisopropoxide, alkyl substituted phenyl titanium triisopropoxide (e.g. (methyl)phenyltriisopropoxytitanium), dimethyldiisopropoxytitanium, (3,3,3-trifluoropropyl)trimethoxytitanium, and tridecafluorooctyltriethoxy Titanium, methyltrichlorotitanium, dimethyldichlorotitanium, trimethylchlorotitanium, phenyltrichlorotitanium, dimethyldifluorotitanium, dimethyldibromotitanium, diphenyldibromotitanium, The hydrolyzed product, the condensate of the hydrolyzed product, and the like. Among these, from the viewpoint of easiness of acquisition, tetramethoxytitanium, tetraethoxytitanium, and tetraisopropoxytitanium are preferable.

作為較佳之鋯酸鹽化合物之例,可列舉:四甲氧基鋯、甲基三甲氧基鋯、乙基三甲氧基鋯、正或異丙基三甲氧基鋯、正、異或第三丁基三甲氧基鋯、正、異或新戊基三甲氧基鋯、己基三甲氧基鋯、辛基三甲氧基鋯、癸基三甲氧基鋯、苯基三甲氧基鋯;烷基取代苯基三甲氧基鋯(例如對(甲基)苯基三甲氧基鋯)、二甲基二甲氧基鋯、四乙氧基鋯、甲基三乙氧基鋯、乙基三乙氧基鋯、正或異丙基三乙氧基鋯、正、異或第三丁基三乙氧基鋯、戊基三乙氧基鋯、己基三乙氧基鋯、辛基三乙氧基鋯、癸基三乙氧基鋯、苯基三乙氧基鋯、烷基取代苯基三乙氧基鋯(例如對(甲基)苯基三乙氧基鋯)、二甲基二乙氧基鋯、四異丙氧基鋯、甲基三異丙氧基鋯、乙基三異丙氧基鋯、正或異丙基三乙氧基鋯、正、異或第三丁基三異丙氧基鋯、戊基三異丙氧基鋯、己基三異丙氧基鋯、辛基三異丙氧基鋯、癸基三異丙氧基鋯、苯基三異丙氧基鋯、烷基取代苯基三異丙氧基鋯(例如對(甲基)苯基三異丙氧基鈦)、二甲基二異丙氧基鋯、(3,3,3-三氟丙基)三甲氧基鋯、及十三氟辛基三乙氧基鋯、甲基三氯鋯、二甲基二氯鋯、三甲基氯鋯、苯基三氯鋯、二甲基二氟鋯、二甲基二溴鋯、二苯基二溴鋯、該等之水解生成物、及該等之水解生成物之縮合物等。該等中,就獲取之容易性之觀點而言,較佳為四甲氧基鋯、四乙氧基鋯、四異丙氧基鋯。 As a preferable example of the zirconate compound, tetramethoxy zirconium, methyltrimethoxyzirconium, ethyltrimethoxyzirconium, n- or isopropyltrimethoxyzirconium, ortho, iso- or tert-butyl can be mentioned. Trimethyl zirconium, n-, iso- or neopentyltrimethoxy zirconium, hexyltrimethoxy zirconium, octyltrimethoxyzirconium, decyltrimethoxyzirconium, phenyltrimethoxyzirconium; alkyl substituted phenyl Trimethoxy zirconium (for example, p-(methyl)phenyltrimethoxyzirconium), dimethyldimethoxyzirconium, tetraethoxyzirconium, methyltriethoxyzirconium, ethyltriethoxyzirconium, N- or isopropyltriethoxy zirconium, n-, iso- or tert-butyltriethoxy zirconium, pentyltriethoxyzirconium, hexyltriethoxyzirconium, octyltriethoxyzirconium, fluorenyl Triethoxy zirconium, phenyltriethoxy zirconium, alkyl substituted phenyl triethoxy zirconium (for example, p-(methyl)phenyltriethoxy zirconium), dimethyldiethoxyzirconium, tetra Zirconium isopropoxide, zirconium methyl triisopropoxide, zirconium ethyl triisopropoxide, zirconium n- or isopropyl triethoxy, n-, iso- or tert-butyl triisopropoxy zirconium, Pentyl triisopropoxy zirconium, hexyl triisopropoxy , octyl triisopropoxy zirconium, decyl triisopropoxy zirconium, phenyl triisopropoxy zirconium, alkyl substituted phenyl triisopropoxy zirconium (for example, p-(methyl)phenyl triiso Titanium propoxide, zirconium dimethyl diisopropoxide, zirconium (3,3,3-trifluoropropyl)trimethoxy, and trifluorooctyltriethoxyzirconium, methyltrichlorozirconium , dimethyl zirconium chloride, trimethyl zirconium chloride, phenyl trichlorozirconium, dimethyl difluoro zirconium, dimethyl dibromo zirconium, diphenyl dibromo zirconium, hydrolyzed products thereof, and A condensate or the like of the hydrolysis product. Among these, from the viewpoint of easiness of acquisition, tetramethoxy zirconium, tetraethoxy zirconium, and tetraisopropoxy zirconium are preferable.

於脫模層之形成步驟中,金屬烷氧化物可以水溶液之形態進行使用。為了提高對水之溶解性,亦可添加甲醇或乙醇等醇。醇之添加於使用疏水性較高之金屬烷氧化物時尤其有效。 In the step of forming the release layer, the metal alkoxide may be used in the form of an aqueous solution. In order to improve the solubility in water, an alcohol such as methanol or ethanol may be added. The addition of an alcohol is particularly effective when a metal alkoxide having a higher hydrophobicity is used.

金屬烷氧化物於水溶液中之濃度較高時,存在樹脂基材與金屬箔之剝離強度降低之傾向,可藉由調整金屬烷氧化物濃度而調整剝離強度。金屬烷氧化物之水溶液中之濃度並無限定,可設為0.001~1.0mol/L,典型而言可設為0.005~0.2mol/L。 When the concentration of the metal alkoxide in the aqueous solution is high, the peel strength of the resin substrate and the metal foil tends to decrease, and the peel strength can be adjusted by adjusting the metal alkoxide concentration. The concentration in the aqueous solution of the metal alkoxide is not limited, and may be 0.001 to 1.0 mol/L, and typically 0.005 to 0.2 mol/L.

金屬烷氧化物之水溶液之pH並無特別限制,於酸性側或鹼性側均可利用。例如可以3.0~10.0之範圍之pH進行使用。就無需進行特別之pH調整之觀點而言,較佳為設為中性附近之5.0~9.0之範圍之pH,更佳為設為7.0~9.0之範圍之pH。 The pH of the aqueous solution of the metal alkoxide is not particularly limited and can be utilized on the acidic side or the alkaline side. For example, it can be used at a pH in the range of 3.0 to 10.0. From the viewpoint of not requiring special pH adjustment, it is preferably a pH in the range of 5.0 to 9.0 in the vicinity of neutrality, and more preferably a pH in the range of 7.0 to 9.0.

(4)其他 (4) Others

可將矽系脫模劑、具有脫模性之樹脂被膜等公知之具有脫模性之物質用於脫模層。 A known release material such as a oxime release agent or a resin film having releasability can be used for the release layer.

關於本發明之金屬箔,亦可於金屬箔之具有表面輪廓之面設置有選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之1種以上之層。此處,所謂鉻酸鹽處理層,係指經包含鉻酸酐、鉻酸、重鉻酸、鉻酸鹽或重鉻酸鹽之液體處理後之層。鉻酸鹽處理層亦可包含鈷、鐵、鎳、鉬、鋅、鉭、銅、鋁、磷、鎢、錫、砷及鈦等元素(可為金屬、合金、氧化物、氮化物、硫化物等任意形態)。作為鉻酸鹽處理層之具體例,可列舉經鉻酸酐或重鉻酸鉀水溶液處理之鉻酸鹽處理層、或經包含鉻酸酐或重鉻酸鉀及鋅之處理液處理之鉻酸鹽處理層等。 The metal foil of the present invention may be provided in a group consisting of a roughened layer, a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a decane coupling treatment layer on the surface of the metal foil having a surface profile. More than one layer. Here, the chromate-treated layer refers to a layer treated with a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate or dichromate. The chromate treatment layer may also contain elements such as cobalt, iron, nickel, molybdenum, zinc, bismuth, copper, aluminum, phosphorus, tungsten, tin, arsenic and titanium (may be metals, alloys, oxides, nitrides, sulfides). Any form). Specific examples of the chromate-treated layer include a chromate treatment layer treated with an aqueous solution of chromic anhydride or potassium dichromate, or a chromate treatment treated with a treatment liquid containing chromic anhydride or potassium dichromate and zinc. Layers, etc.

粗化處理層例如可藉由以下之處理而形成。 The roughening treatment layer can be formed, for example, by the following treatment.

[球狀粗化] [spherical roughening]

使用由Cu、H2SO4、As所構成之以下所記載之銅粗化鍍浴形成球狀粗化粒子。 The spherical roughening particles are formed using a copper roughening plating bath described below composed of Cu, H 2 SO 4 , and As.

‧液組成1 ‧ liquid composition 1

CuSO4.5H2O 78~196g/L CuSO 4 . 5H 2 O 78~196g/L

Cu 20~50g/L Cu 20~50g/L

H2SO4 50~200g/L H 2 SO 4 50~200g/L

砷0.7~3.0g/L Arsenic 0.7~3.0g/L

(電解鍍覆溫度1)30~76℃ (electrolytic plating temperature 1) 30~76°C

(電流條件1)電流密度35~105A/dm2(浴之極限電流密度以上) (current condition 1) current density 35~105A/dm 2 (above the limit current density of the bath)

(鍍覆時間1)1~240秒 (plating time 1) 1~240 seconds

繼而,為了防止粗化粒子之脫落及提高剝離強度,利用由硫酸、硫酸銅所構成之銅電解浴進行被覆鍍覆。將被覆鍍覆條件記載於下文。 Then, in order to prevent the peeling of the roughened particles and to improve the peeling strength, the coating was performed by a copper electrolytic bath composed of sulfuric acid or copper sulfate. The coating plating conditions are described below.

‧液組成2 ‧ liquid composition 2

CuSO4.5H2O 88~352g/L CuSO 4 . 5H 2 O 88~352g/L

Cu 22~90g/L Cu 22~90g/L

H2SO4 50~200g/L H 2 SO 4 50~200g/L

(電解鍍覆溫度2)25~80℃ (electrolytic plating temperature 2) 25~80°C

(電流條件2)電流密度:15~32A/dm2(未達浴之極限電流密度) (Current condition 2) Current density: 15~32A/dm 2 (Unlimited bath current limit)

(鍍覆時間1)1~240秒 (plating time 1) 1~240 seconds

[微細粗化] [fine coarsening]

首先,以下述條件進行粗化處理。粗化(處理)粒子形成時之電流密度與極限電流密度之比、即相對於極限電流密度的比(=粗化(處理)粒子形成時之電流密度/極限電流密度)係設為2.10~2.90。 First, the roughening treatment was carried out under the following conditions. The ratio of the current density to the limiting current density at the time of roughening (treatment) particle formation, that is, the ratio with respect to the limiting current density (=current density/limit current density at the time of roughening (processed particle formation)) is set to 2.10 to 2.90. .

‧液組成1 ‧ liquid composition 1

CuSO4‧5H2O 29.5~118g/L CuSO 4 ‧5H 2 O 29.5~118g/L

Cu 7.5~30g/L Cu 7.5~30g/L

H2SO4 50~200g/L H 2 SO 4 50~200g/L

Na2WO4‧2H2O 2.7~10.8mg/L Na 2 WO 4 ‧2H 2 O 2.7~10.8mg/L

十二烷基硫酸鈉添加量5~20ppm Sodium lauryl sulfate added 5~20ppm

(電解鍍覆溫度1)20~70℃ (electrolytic plating temperature 1) 20~70°C

(電流條件1)電流密度34~74A/dm2 (current condition 1) current density 34~74A/dm 2

(鍍覆時間1)1~180秒 (plating time 1) 1~180 seconds

繼而,以下文所示之條件進行正常鍍覆。 Then, normal plating is performed under the conditions shown below.

‧液組成2 ‧ liquid composition 2

CuSO4‧5H2O 88~352g/L CuSO 4 ‧5H 2 O 88~352g/L

Cu 40~90g/L Cu 40~90g/L

H2SO4 50~200g/L H 2 SO 4 50~200g/L

(電解鍍覆溫度2)30~65℃ (electrolytic plating temperature 2) 30~65°C

(電流條件2)電流密度21~45A/dm2 (current condition 2) current density 21~45A/dm 2

(鍍覆時間2)1~180秒 (plating time 2) 1~180 seconds

由每10μm長度之粒子數(粒子密度=個/10μm)=X、表面之粗糙度Rz=Y所構成之√X×Y、及由每10μm2之粒子數(粒子密度 =個/10μm2)=Z、表面之粗糙度Rz=Y所構成之√Z×Y亦可藉由上述粗化處理條件而進行調整。例如,於使用相同之電解生箔時,若使上述粗化處理之液組成1之鍍覆時間增加,則可不於改變Y之情況下使X或Z增大,即,使√X×Y或√Z×Y增大。 The number of particles per 10 μm length (particle density = one/10 μm) = X, the roughness of the surface Rz = Y, X × Y, and the number of particles per 10 μm 2 (particle density = one/10 μm 2 ) =Z, the roughness of the surface Rz=Y, √Z×Y can also be adjusted by the above roughening treatment conditions. For example, when the same electrolytic green foil is used, if the plating time of the liquid composition 1 of the roughening treatment is increased, X or Z can be increased without changing Y, that is, √X×Y or √Z×Y increases.

又,作為耐熱層、防銹層,可使用公知之耐熱層、防銹層。例如,耐熱層及/或防銹層可為包含選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭之群中之1種以上之元素之層,亦可為由選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭之群中之1種以上之元素所構成之金屬層或合金層。又,耐熱層及/或防銹層亦可包含含有選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭之群中之1種以上之元素之氧化物、氮化物、矽化物。又,耐熱層及/或防銹層亦可為包含鎳-鋅合金之層。又,耐熱層及/或防銹層亦可為鎳-鋅合金層。上述鎳-鋅合金層亦可為除了無法避免之雜質以外,含有50wt%~99wt%之鎳、50wt%~1wt%之鋅者。上述鎳-鋅合金層之鋅及鎳之合計附著量可為5~1000mg/m2,較佳為10~500mg/m2,較佳為20~100mg/m2。又,上述包含鎳-鋅合金之層或上述鎳-鋅合金層之鎳之附著量與鋅之附著量之比(=鎳之附著量/鋅之附著量)較佳為1.5~10。又,上述包含鎳-鋅合金之層或上述鎳-鋅合金層之鎳之附著量較佳為0.5mg/m2~500mg/m2,更佳為1mg/m2~50mg/m2Further, as the heat-resistant layer and the rust-preventive layer, a known heat-resistant layer or rust-preventing layer can be used. For example, the heat resistant layer and/or the rustproof layer may be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron. a layer of one or more elements of the group of bismuth, or may be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, A metal layer or an alloy layer composed of one or more elements selected from the group consisting of platinum group elements, iron, and lanthanum. Moreover, the heat-resistant layer and/or the rust-preventing layer may further comprise a component selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum. Oxides, nitrides, and tellurides of one or more elements of the group of iron and antimony. Further, the heat-resistant layer and/or the rust-preventive layer may be a layer containing a nickel-zinc alloy. Further, the heat-resistant layer and/or the rust-preventive layer may be a nickel-zinc alloy layer. The above nickel-zinc alloy layer may also contain 50% by weight to 99% by weight of nickel and 50% by weight to 1% by weight of zinc in addition to unavoidable impurities. The total amount of zinc and nickel attached to the nickel-zinc alloy layer may be 5 to 1000 mg/m 2 , preferably 10 to 500 mg/m 2 , preferably 20 to 100 mg/m 2 . Further, the ratio of the adhesion amount of nickel to the nickel-zinc alloy layer or the nickel-zinc alloy layer to the adhesion amount of zinc (=the adhesion amount of nickel/the adhesion amount of zinc) is preferably 1.5 to 10. Further, the adhesion amount of the nickel-containing zinc alloy layer or the nickel-zinc alloy layer is preferably 0.5 mg/m 2 to 500 mg/m 2 , more preferably 1 mg/m 2 to 50 mg/m 2 .

例如,耐熱層及/或防銹層亦可為依次積層附著量為1mg/m2~100mg/m2、較佳為5mg/m2~50mg/m2之鎳或鎳合金層、與附著 量為1mg/m2~80mg/m2、較佳為5mg/m2~40mg/m2之錫層而成者,上述鎳合金層亦可由鎳-鉬、鎳-鋅、鎳-鉬-鈷中之任一種構成。又,耐熱層及/或防銹層中,鎳或鎳合金與錫之合計附著量較佳為2mg/m2~150mg/m2,更佳為10mg/m2~70mg/m2。又,耐熱層及/或防銹層中,[鎳或鎳合金中之鎳附著量]/[錫附著量]較佳為0.25~10,更佳為0.33~3。 For example, the heat-resistant layer and/or the rust-preventing layer may be a nickel or nickel alloy layer in which the deposition amount is 1 mg/m 2 to 100 mg/m 2 , preferably 5 mg/m 2 to 50 mg/m 2 , and the adhesion amount. The nickel alloy layer may also be composed of nickel-molybdenum, nickel-zinc, nickel-molybdenum-cobalt, which is a tin layer of 1 mg/m 2 to 80 mg/m 2 , preferably 5 mg/m 2 to 40 mg/m 2 . Any of the components. Further, in the heat-resistant layer and/or the rust-preventive layer, the total adhesion amount of nickel or a nickel alloy to tin is preferably 2 mg/m 2 to 150 mg/m 2 , more preferably 10 mg/m 2 to 70 mg/m 2 . Further, in the heat-resistant layer and/or the rust-preventive layer, [the amount of nickel deposited in the nickel or nickel alloy] / [the amount of tin adhesion] is preferably 0.25 to 10, more preferably 0.33 to 3.

再者,於矽烷偶合處理中所使用之矽烷偶合劑可使用公知之矽烷偶合劑,例如可使用胺基系矽烷偶合劑或環氧系矽烷偶合劑、巰基系矽烷偶合劑。又,對於矽烷偶合劑,亦可使用乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、4-縮水甘油基丁基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、咪唑矽烷、三矽烷、γ-巰基丙基三甲氧基矽烷等。 Further, a known decane coupling agent can be used as the decane coupling agent used in the decane coupling treatment, and for example, an amine decane coupling agent, an epoxy decane coupling agent, or a decyl decane coupling agent can be used. Further, as the decane coupling agent, vinyl trimethoxy decane, vinyl phenyl trimethoxy decane, γ-methyl propylene methoxy propyl trimethoxy decane, γ-glycidoxy propyl trimethyl group can also be used. Oxydecane, 4-glycidylbutyltrimethoxydecane, γ-aminopropyltriethoxydecane, N-β(aminoethyl)γ-aminopropyltrimethoxydecane, N- 3-(4-(3-Aminopropyloxy)butoxy)propyl-3-aminopropyltrimethoxydecane, imidazolium, three Decane, γ-mercaptopropyltrimethoxydecane, and the like.

上述矽烷偶合處理層亦可使用環氧系矽烷、胺基系矽烷、甲基丙烯醯氧基系矽烷、巰基系矽烷等矽烷偶合劑等而形成。再者,此種矽烷偶合劑亦可混合2種以上而使用。其中,較佳為使用胺基系矽烷偶合劑或環氧系矽烷偶合劑而形成者。 The decane coupling treatment layer may be formed using a decane coupling agent such as epoxy decane, amino decane, methacryloxy decane or decyl decane. Further, such a decane coupling agent may be used in combination of two or more kinds. Among them, it is preferred to use an amine decane coupling agent or an epoxy decane coupling agent.

所謂此處所言之胺基系矽烷偶合劑,亦可為選自由N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、胺基丙基三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、N-(3-丙烯 醯氧基-2-羥基丙基)-3-胺基丙基三乙氧基矽烷、4-胺基丁基三乙氧基矽烷、(胺基乙基胺基甲基)苯乙基三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三(2-乙基己氧基)矽烷、6-(胺基己基胺基丙基)三甲氧基矽烷、胺基苯基三甲氧基矽烷、3-(1-胺基丙氧基)-3,3-二甲基-1-丙烯基三甲氧基矽烷、3-胺基丙基三(甲氧基乙氧基乙氧基)矽烷、3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、ω-胺基十一烷基三甲氧基矽烷、3-(2-N-苄基胺基乙基胺基丙基)三甲氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、(N,N-二乙基-3-胺基丙基)三甲氧基矽烷、(N,N-二甲基-3-胺基丙基)三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷所組成之群中之矽烷偶合劑。 The amine decane coupling agent referred to herein may also be selected from the group consisting of N-(2-aminoethyl)-3-aminopropyltrimethoxydecane, 3-(N-styrylmethyl- 2-Aminoethylamino)propyltrimethoxydecane, 3-aminopropyltriethoxydecane, bis(2-hydroxyethyl)-3-aminopropyltriethoxydecane, amine Propyltrimethoxydecane, N-methylaminopropyltrimethoxydecane, N-phenylaminopropyltrimethoxydecane, N-(3-propene 醯oxy-2-hydroxypropyl)-3-aminopropyltriethoxydecane, 4-aminobutyltriethoxydecane, (aminoethylaminomethyl)phenethyltrimethoxy Baseline, N-(2-aminoethyl-3-aminopropyl)trimethoxynonane, N-(2-aminoethyl-3-aminopropyl)tris(2-ethylhexyloxy) Base) decane, 6-(aminohexylaminopropyl)trimethoxynonane, aminophenyltrimethoxydecane, 3-(1-aminopropoxy)-3,3-dimethyl-1 - propenyltrimethoxydecane, 3-aminopropyltris(methoxyethoxyethoxy)decane, 3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxydecane , ω-aminoundecyltrimethoxydecane, 3-(2-N-benzylaminoethylaminopropyl)trimethoxydecane, bis(2-hydroxyethyl)-3-amino Propyltriethoxydecane, (N,N-diethyl-3-aminopropyl)trimethoxynonane, (N,N-dimethyl-3-aminopropyl)trimethoxynonane, N-methylaminopropyltrimethoxydecane, N-phenylaminopropyltrimethoxydecane, 3-(N-styrylmethyl-2-aminoethylamino)propyltrimethoxy Baseline, γ-aminopropyltriethoxydecane, N-β (基-aminopropyltrimethoxydecane, N-3-(4-(3-aminopropoxy)butoxy)propyl-3-aminopropyltrimethoxydecane a decane coupling agent in the group.

矽烷偶合處理層較理想為以矽原子換算計以0.05mg/m2~200mg/m2、較佳為0.15mg/m2~20mg/m2、較佳為0.3mg/m2~2.0mg/m2之範圍設置。於上述範圍之情形時,可進一步提高樹脂基材與金屬箔之密接性。 The decane coupling treatment layer is preferably 0.05 mg/m 2 to 200 mg/m 2 , preferably 0.15 mg/m 2 to 20 mg/m 2 , preferably 0.3 mg/m 2 to 2.0 mg/in terms of ruthenium atom. The range of m 2 is set. In the case of the above range, the adhesion between the resin substrate and the metal foil can be further improved.

又,可對金屬箔、粗化粒子層、耐熱層、防銹層、矽烷偶合處理層、鉻酸鹽處理層或脫模層之表面,進行國際公開編號WO2008/053878、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、國際公開編號WO2006/134868、 日本專利第5046927號、國際公開編號WO2007/105635、日本專利第5180815號、日本特開2013-19056號中所記載之表面處理。 Further, the surface of the metal foil, the roughened particle layer, the heat-resistant layer, the rustproof layer, the decane coupling treatment layer, the chromate treatment layer or the release layer can be subjected to International Publication No. WO2008/053878, and JP-A-2008-111169 No. Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, International Publication No. WO2006/134868, The surface treatment described in Japanese Patent No. 5,046,927, International Publication No. WO2007/105635, Japanese Patent No. 5180815, and Japanese Patent Laid-Open No. 2013-19056.

於本發明之金屬箔之具有表面輪廓之面側、或本發明之附脫模層之金屬箔之脫模層側,亦可設置樹脂層。 A resin layer may be provided on the side of the metal foil of the present invention having a surface profile or on the side of the release layer of the metal foil of the release layer of the present invention.

上述樹脂層可為接著用樹脂、即接著劑,亦可為底塗劑,亦可為半硬化狀態(B階段狀態)之接著用絕緣樹脂層。所謂半硬化狀態(B階段狀態),包括如下狀態:即便用手指觸碰其表面,亦無黏著感,可將該絕緣樹脂層重疊來保管,進而,若受到加熱處理,則會產生硬化反應。上述金屬箔之表面之樹脂層較佳為於與脫模層接觸時表現出適度之剝離強度(例如2gf/cm~200gf/cm)之樹脂層。又,較佳為使用追隨金屬箔之表面之凹凸而難以產生有可能導致鼓起之空隙或氣泡之混入的樹脂。例如,於在金屬箔表面設置該樹脂層時,較佳為使用樹脂黏度為10000mPa‧s(25℃)以下、更佳為樹脂黏度為5000mPa‧s(25℃)以下等黏度較低之樹脂而設置樹脂層。藉由於積層於金屬箔之絕緣基板與金屬箔之間設置上述樹脂層,而即便於使用難以追隨金屬箔之表面之凹凸之絕緣基板之情形時,樹脂層亦追隨金屬箔表面,因此,可使金屬箔與絕緣基板之間難以產生空隙或氣泡,故而有效。 The resin layer may be a resin, that is, an adhesive, or a primer, or an insulating resin layer may be used in a semi-hardened state (B-stage state). The semi-hardened state (B-stage state) includes a state in which there is no adhesive feeling even when the surface is touched with a finger, and the insulating resin layer can be stacked and stored, and further, if subjected to heat treatment, a curing reaction occurs. The resin layer on the surface of the metal foil is preferably a resin layer which exhibits a moderate peel strength (for example, 2 gf/cm to 200 gf/cm) when it comes into contact with the release layer. Moreover, it is preferable to use the unevenness of the surface of the metal foil, and it is difficult to produce a resin which may cause a bulging void or a bubble. For example, when the resin layer is provided on the surface of the metal foil, it is preferable to use a resin having a resin viscosity of 10000 mPa ‧ (25 ° C) or less, more preferably a resin viscosity of 5000 mPa ‧ s (25 ° C) or less Set the resin layer. By providing the resin layer between the insulating substrate laminated on the metal foil and the metal foil, the resin layer can follow the surface of the metal foil even when an insulating substrate which is difficult to follow the unevenness of the surface of the metal foil is used. It is effective in that it is difficult to generate voids or bubbles between the metal foil and the insulating substrate.

又,上述金屬箔之表面之樹脂層可含有熱硬化性樹脂,亦可為熱塑性樹脂。又,上述金屬箔之表面之樹脂層亦可含有熱塑性樹脂。上述金屬箔之表面之樹脂層可包含公知之樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應觸媒、交聯劑、聚合物、預浸料、骨架材料等。又,上述金屬箔之表面之樹脂層亦可使用例如國際公開編號WO2008/004399、 國際公開編號WO2008/053878、國際公開編號WO2009/084533、日本特開平11-5828號、日本特開平11-140281號、日本專利第3184485號、國際公開編號WO97/02728、日本專利第3676375號、日本特開2000-43188號、日本專利第3612594號、日本特開2002-179772號、日本特開2002-359444號、日本特開2003-304068號、日本專利第3992225號、日本特開2003-249739號、日本專利第4136509號、日本特開2004-82687號、日本專利第4025177號、日本特開2004-349654號、日本專利第4286060號、日本特開2005-262506號、日本專利第4570070號、日本特開2005-53218號、日本專利第3949676號、日本專利第4178415號、國際公開編號WO2004/005588、日本特開2006-257153號、日本特開2007-326923號、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、日本特開2009-67029號、國際公開編號WO2006/134868、日本專利第5046927號、日本特開2009-173017號、國際公開編號WO2007/105635、日本專利第5180815號、國際公開編號WO2008/114858、國際公開編號WO2009/008471、日本特開2011-14727號、國際公開編號WO2009/001850、國際公開編號WO2009/145179、國際公開編號WO2011/068157、日本特開2013-19056號中所記載之物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應觸媒、交聯劑、聚合物、預浸料、骨架材料等)及/或樹脂層之形成方法、形成裝置而形成。 Further, the resin layer on the surface of the metal foil may contain a thermosetting resin or a thermoplastic resin. Further, the resin layer on the surface of the metal foil may contain a thermoplastic resin. The resin layer on the surface of the metal foil may include a known resin, a resin hardener, a compound, a hardening accelerator, a dielectric, a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton material, and the like. Further, the resin layer on the surface of the metal foil may also be, for example, International Publication No. WO2008/004399. International Publication No. WO2008/053878, International Publication No. WO2009/084533, Japanese Laid-Open Patent Publication No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei. JP-A-2000-43188, Japanese Patent No. 3,612,594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open No. 2002-359444, Japanese Patent Laid-Open No. 2003-304068, Japanese Patent No. 3992225, and Japanese Patent Laid-Open No. 2003-249739 Japanese Patent No. 4136509, Japanese Patent Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Laid-Open No. 2004-349654, Japanese Patent No. 4286060, Japanese Patent Laid-Open No. 2005-262506, Japanese Patent No. 4570070, Japan Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004/005588, Japanese Patent Laid-Open No. Hei. No. 2006-257153, Japanese Patent Laid-Open No. 2007-326923, No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, Japanese Patent Laid-Open No. 2009-67029, International Publication No. WO2006/134868, Japanese Patent No. 5046927, Japanese JP-A-2009-173017, International Publication No. WO2007/105635, Japanese Patent No. 5180815, International Publication No. WO2008/114858, International Publication No. WO2009/008471, Japanese Patent Publication No. 2011-14727, International Publication No. WO2009/001850, International A substance (resin, a resin curing agent, a compound, a curing accelerator, a dielectric, a reaction catalyst, a crosslinking agent, or the like) disclosed in WO2009/145179, International Publication No. WO2011/068157, and JP-A-2013-19056 It is formed by a method of forming a polymer, a prepreg, a skeleton material, and the like, and/or a resin layer, and a forming apparatus.

(積層體、半導體封裝、電子機器) (layered body, semiconductor package, electronic equipment)

可於本發明之金屬箔之具有表面輪廓之面側、或本發明之附脫模層之金屬箔之脫模層側設置樹脂基材而製作積層體。該積層體可利用紙基材酚 樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂等形成樹脂基材。樹脂基材可為預浸料,亦可含有熱硬化性樹脂。又,可藉由於該積層體之金屬箔形成電路而製作印刷配線板。進而,可藉由於印刷配線板搭載電子零件類而製作印刷電路板。於本發明中,「印刷配線板」中亦包含以此種方式搭載有電子零件類之印刷配線板、印刷電路板及印刷基板。又,可使用該印刷配線板製作電子機器,亦可使用搭載有該電子零件類之印刷電路板製作電子機器,亦可使用搭載有該電子零件類之印刷基板製作電子機器。又,上述「印刷電路板」中,亦包含半導體封裝用電路形成基板。進而,可於半導體封裝用電路形成基板搭載電子零件類而製作半導體封裝。進而,亦可使用該半導體封裝製作電子機器。 A resin substrate may be provided on the surface side of the metal foil of the present invention having the surface profile or the release layer side of the metal foil of the release layer of the present invention to produce a laminate. The laminate can utilize the paper substrate phenol Resin, paper substrate epoxy resin, synthetic fiber cloth substrate epoxy resin, glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin Resin substrate. The resin substrate may be a prepreg or a thermosetting resin. Further, a printed wiring board can be produced by forming a circuit of the metal foil of the laminated body. Further, a printed circuit board can be produced by mounting electronic components on a printed wiring board. In the present invention, the "printed wiring board" also includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components are mounted in this manner. Moreover, an electronic device can be produced using the printed wiring board, and an electronic device can be produced using a printed circuit board on which the electronic component is mounted, or an electronic device can be manufactured using the printed circuit board on which the electronic component is mounted. Further, the above-mentioned "printed circuit board" also includes a circuit-formed substrate for semiconductor packaging. Further, an electronic component can be mounted on a circuit-formed substrate for semiconductor packaging to fabricate a semiconductor package. Further, an electronic device can be fabricated using the semiconductor package.

(印刷配線板之製造方法) (Manufacturing method of printed wiring board)

本發明之印刷配線板之製造方法於一態樣中具備:自本發明之金屬箔之具有表面輪廓之面側、或本發明之附脫模層之金屬箔之脫模層側貼合樹脂基材之步驟;藉由不進行蝕刻而將上述金屬箔或上述附脫模層之金屬箔自上述樹脂基材剝離,而獲得於剝離面轉印有上述金屬箔或上述附脫模層之金屬箔之表面輪廓之樹脂基材之步驟;及於上述轉印有表面輪廓之樹脂基材之上述剝離面側形成電路之步驟。藉由此種構成,於金屬箔設置或不設脫模層,將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,於將金屬箔自樹脂基材去除之步驟中,可於不損傷自金屬箔表面轉印至樹脂基材之表面的表面輪廓之情況下以較佳之成本將金屬箔去除。該製造方法中,亦可利用鍍覆圖案形成電路。於此情形時,可於形成鍍覆圖案後,利 用該鍍覆圖案形成所需之電路而製作印刷配線板。又,亦可利用印刷圖案形成電路。於此情形時,例如可於使用油墨中包含導電膏等之噴墨形成印刷圖案後,利用該印刷圖案形成所需之印刷電路而製作印刷配線板。 The method for producing a printed wiring board of the present invention comprises, in one aspect, a resin-based side from the surface side of the metal foil of the present invention having a surface profile or the release layer side of the metal foil of the release layer of the present invention. a step of removing the metal foil of the metal foil or the release layer from the resin substrate without etching, thereby obtaining a metal foil having the metal foil or the release layer attached to the release surface a step of forming a resin substrate on the surface profile; and a step of forming a circuit on the side of the peeling surface of the resin substrate on which the surface profile is transferred. According to this configuration, the resin substrate can be physically peeled off when the metal foil is bonded to the resin substrate with or without the release layer, and in the step of removing the metal foil from the resin substrate, The metal foil can be removed at a preferred cost without damaging the surface profile transferred from the surface of the metal foil to the surface of the resin substrate. In this manufacturing method, a circuit can be formed using a plating pattern. In this case, after forming a plating pattern, A printed wiring board is produced by forming a desired circuit using the plating pattern. Further, the circuit can be formed using a printed pattern. In this case, for example, after a printed pattern is formed by using an inkjet containing a conductive paste or the like in the ink, a printed circuit board is formed by forming a desired printed circuit using the printed pattern.

於本說明書中,所謂「表面輪廓」,係指表面之凹凸形狀。 In the present specification, the term "surface profile" means the uneven shape of the surface.

進而,本發明之印刷配線板之製造方法於又一態樣中具備:自本發明之金屬箔之具有表面輪廓之面側、或本發明之附脫模層之金屬箔之脫模層側貼合樹脂基材之步驟;藉由不進行蝕刻而將上述金屬箔或上述附脫模層之金屬箔自上述樹脂基材剝離,而獲得於剝離面轉印有上述金屬箔或上述附脫模層之金屬箔之表面輪廓之樹脂基材之步驟;及於上述轉印有表面輪廓之樹脂基材之上述剝離面側設置增層之步驟。藉由此種構成,於金屬箔設置或不設置脫模層,將該金屬箔貼合於樹脂基材時之樹脂基材可物理性剝離,於將金屬箔自樹脂基材去除之步驟中,可於不損傷轉印至樹脂基材之表面之金屬箔表面之輪廓之情況下以較佳之成本將金屬箔去除。又,藉由轉印至樹脂基材之特定之凹凸表面,無論樹脂基材之樹脂成分與增層之樹脂成分相同抑或不同,均可將兩者以良好之密接性貼合。 Further, the method for producing a printed wiring board according to the present invention is further provided in the aspect of the present invention, comprising: a side surface having a surface profile of the metal foil of the present invention, or a release layer side of a metal foil with a release layer of the present invention a step of forming a resin substrate by peeling the metal foil or the metal foil with the release layer from the resin substrate without etching, thereby obtaining the metal foil or the release layer on the release surface a step of forming a resin substrate on the surface of the metal foil; and a step of providing a layer on the side of the peeling surface of the resin substrate on which the surface profile is transferred. According to this configuration, the metal substrate is provided with or without the release layer, and the resin substrate is physically peeled off when the metal foil is bonded to the resin substrate, and the step of removing the metal foil from the resin substrate is performed. The metal foil can be removed at a preferred cost without damaging the contour of the surface of the metal foil transferred to the surface of the resin substrate. Further, by transferring to the specific uneven surface of the resin substrate, both of the resin components of the resin substrate and the resin component of the build-up layer can be bonded to each other with good adhesion.

此處,所謂「增層」,係指具有導電層、配線圖案或電路、及樹脂等絕緣體之層。該樹脂等絕緣體之形狀亦可為層狀。又,上述導電層、配線圖案或電路、及樹脂等絕緣體可以任何方式設置。 Here, the term "additional layer" means a layer having a conductive layer, a wiring pattern or a circuit, and an insulator such as a resin. The shape of the insulator such as the resin may be a layer. Further, the conductive layer, the wiring pattern or the circuit, and an insulator such as a resin may be provided in any manner.

增層可藉由於在剝離面轉印有上述金屬箔之表面輪廓之樹脂基材之剝離面側設置導電層、配線圖案或電路、及樹脂等絕緣體而製作。作為導電層、配線圖案或電路之形成方法,可使用半加成法、全加成法、減成法、部分加成法等公知之方法。 The build-up layer can be produced by providing a conductive layer, a wiring pattern, a circuit, and an insulator such as a resin on the peeling surface side of the resin substrate on which the surface profile of the metal foil is transferred on the peeling surface. As a method of forming the conductive layer, the wiring pattern, or the circuit, a known method such as a semi-additive method, a full addition method, a subtractive method, or a partial addition method can be used.

增層亦可具有數層,亦可具有複數之導電層、配線圖案或電路、及樹脂(層)等絕緣體。 The buildup layer may have several layers, and may have a plurality of conductive layers, wiring patterns or circuits, and insulators such as a resin (layer).

複數之導電層、配線圖案或電路亦可藉由樹脂等絕緣體而電性絕緣。亦可於藉由雷射及/或鑽孔器於樹脂等絕緣體上形成通孔及/或盲孔後,於該通孔及/或盲孔形成鍍銅等導通鍍覆,藉此,使電性絕緣之複數之導電層、配線圖案或電路電性連接。 The plurality of conductive layers, wiring patterns or circuits may be electrically insulated by an insulator such as a resin. After forming a through hole and/or a blind hole in an insulator such as a resin by a laser and/or a drill, a through plating such as copper plating may be formed on the through hole and/or the blind hole, thereby making electricity The plurality of conductive layers, wiring patterns or circuits are electrically connected.

再者,亦可將本發明之金屬箔或本發明之附脫模層之金屬箔自本發明之金屬箔之具有表面輪廓之面側、或本發明之附脫模層之金屬箔之脫模層側貼合於樹脂基材之兩面,其後,將金屬箔或附脫模層之金屬箔去除,將金屬箔之表面輪廓轉印至樹脂基材之兩面,並於該樹脂基材之兩面設置電路、配線圖案或增層,藉此製造印刷配線板。 Further, the metal foil of the present invention or the metal foil of the release layer of the present invention may be released from the surface side of the metal foil of the present invention having the surface profile or the metal foil of the release layer of the present invention. The layer side is bonded to both sides of the resin substrate, and thereafter, the metal foil or the metal foil with the release layer is removed, and the surface profile of the metal foil is transferred to both sides of the resin substrate, and on both sides of the resin substrate A circuit, a wiring pattern, or a build-up layer is provided, thereby manufacturing a printed wiring board.

構成此種增層之樹脂等絕緣體可使用本說明書中所記載之樹脂、樹脂層、樹脂基材,可使用公知之樹脂、樹脂層、樹脂基材、絕緣體、預浸料、使玻璃布含浸樹脂而成之基材等。樹脂亦可包含無機物及/或有機物。又,構成增層之樹脂亦可由LCP(液晶聚合物)或聚四氟乙烯等具有低相對介電常數之材料形成。近年來,隨著高頻製品之擴大,將LCP(液晶聚合物)或聚四氟乙烯(Teflon:註冊商標)等具有低相對介電常數之材料引入印刷基板之構造中之動向活躍。此時,由於該等材料為熱塑性,故而於熱壓加工時無法避免形狀變化,利用LCP(液晶聚合物)或聚四氟乙烯單獨成分之基板構成中,存在生產良率未得到提高之基本量產上之課題。上述本發明之製造方法中,對於此種問題,藉由使用環氧樹脂般之熱硬化性樹脂作為樹脂基板,並與此貼合,亦可提供一種高頻特性優異、且 可防止加熱時之形狀變形之印刷配線板。 The resin, the resin layer, and the resin substrate described in the present specification can be used as the insulator such as the resin constituting the layered layer, and a known resin, a resin layer, a resin substrate, an insulator, a prepreg, and a glass cloth impregnated resin can be used. The substrate is formed. The resin may also contain inorganic and/or organic materials. Further, the resin constituting the buildup layer may be formed of a material having a low relative dielectric constant such as LCP (liquid crystal polymer) or polytetrafluoroethylene. In recent years, with the expansion of high-frequency products, the trend of introducing a material having a low relative dielectric constant such as LCP (liquid crystal polymer) or polytetrafluoroethylene (Teflon: registered trademark) into a structure of a printed substrate has become active. At this time, since these materials are thermoplastic, shape change cannot be avoided during hot press processing, and in the substrate configuration using LCP (liquid crystal polymer) or a single component of polytetrafluoroethylene, there is a substantial amount in which the production yield is not improved. The subject of production. In the above-described production method of the present invention, by using a thermosetting resin such as an epoxy resin as a resin substrate, and bonding therewith, it is possible to provide an excellent high-frequency characteristic. A printed wiring board that prevents deformation of the shape during heating.

使用本發明之金屬箔並藉由半加成法,可形成微細電路。圖1中表示使用金屬箔(例如銅箔)之表面輪廓之半加成法之概略例。該半加成法中,使用金屬箔之表面輪廓。具體而言,首先,使本發明之附脫模層之金屬箔自脫模層側積層於樹脂基材而製作積層體。繼而,藉由蝕刻將積層體之金屬箔去除或剝離。繼而,利用稀硫酸等將轉印有金屬箔表面輪廓之樹脂基材之表面洗淨後,實施無電解鍍銅。繼而,利用乾膜等覆蓋樹脂基材之不形成電路之部分,對未被乾膜覆蓋之無電解鍍銅層之表面實施電(電解)鍍銅。其後,將乾膜去除後,將在不形成電路之部分所形成之無電解鍍銅層去除,藉此形成微細之電路。本發明中所形成之微細電路與轉印有本發明之金屬箔表面輪廓之樹脂基材之剝離面密接,故而其密接力(剝離強度)良好。 A fine circuit can be formed by using the metal foil of the present invention and by a semi-additive method. Fig. 1 shows a schematic example of a semi-additive method using a surface profile of a metal foil (e.g., copper foil). In the semi-additive method, the surface profile of the metal foil is used. Specifically, first, the metal foil with the release layer of the present invention is laminated on the resin substrate from the side of the release layer to form a laminate. Then, the metal foil of the laminate is removed or peeled off by etching. Then, the surface of the resin substrate on which the surface profile of the metal foil is transferred is washed with dilute sulfuric acid or the like, and then electroless copper plating is performed. Then, the surface of the resin substrate which does not form a circuit is covered with a dry film or the like, and the surface of the electroless copper plating layer which is not covered with the dry film is subjected to electric (electrolytic) copper plating. Thereafter, after the dry film is removed, the electroless copper plating layer formed in the portion where the circuit is not formed is removed, thereby forming a fine circuit. The fine circuit formed in the present invention is in close contact with the peeling surface of the resin substrate on which the surface profile of the metal foil of the present invention is transferred, so that the adhesion (peeling strength) is good.

又,半加成法之另一實施形態為如下所述。 Further, another embodiment of the semi-additive method is as follows.

所謂半加成法,係指如下方法:於樹脂基材或金屬箔上進行較薄之無電解鍍覆,形成圖案後,利用電解鍍覆及蝕刻形成導體圖案。因此,於使用半加成法之本發明之印刷配線板之製造方法之一實施形態中,包括:準備本發明之金屬箔或本發明之附脫模層之金屬箔、及樹脂基材之步驟;於上述金屬箔或上述附脫模層之金屬箔自表面輪廓處於控制之側或脫模層側積層樹脂基材之步驟;於將上述金屬箔與樹脂基材積層後,藉由蝕刻將上述金屬箔去除或剝離之步驟; 於將上述金屬箔去除或剝離而產生之樹脂基材之露出面或剝離面設置通孔或/及盲孔之步驟;對包含上述通孔或/及盲孔之區域進行除膠渣處理之步驟;對於上述樹脂基材及包含上述通孔或/及盲孔之區域,利用稀硫酸等將樹脂基材表面洗淨,並設置無電解鍍覆層(例如無電解鍍銅層)之步驟;於上述無電解鍍覆層上設置抗鍍覆層之步驟;對上述抗鍍覆層進行曝光,其後,將形成電路之區域之抗鍍覆層去除之步驟;於上述抗鍍覆層被去除之上述形成電路之區域設置電解鍍覆層(例如電解鍍銅層)之步驟;將上述抗鍍覆層去除之步驟;及藉由閃蝕等將上述形成電路之區域以外之區域中存在之無電解鍍覆層去除之步驟。 The semi-additive method refers to a method in which thin electroless plating is performed on a resin substrate or a metal foil, and after forming a pattern, a conductor pattern is formed by electrolytic plating and etching. Therefore, in one embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method, the method includes the steps of: preparing the metal foil of the present invention or the metal foil of the release layer of the present invention, and a resin substrate. a step of laminating a resin substrate on the metal foil or the metal foil with the release layer from the surface of the control layer or the release layer side; after laminating the metal foil and the resin substrate, the above is performed by etching a step of removing or peeling the metal foil; a step of providing a through hole or/and a blind hole in an exposed surface or a peeling surface of the resin substrate obtained by removing or peeling the metal foil; and performing a desmear treatment step on the region including the through hole or/and the blind hole a step of washing the surface of the resin substrate with dilute sulfuric acid or the like and providing an electroless plating layer (for example, an electroless copper plating layer) on the resin substrate and the region including the through hole or/and the blind hole; a step of providing a plating resist layer on the electroless plating layer; exposing the plating resist layer, and thereafter removing a plating resist layer in a region where the circuit is formed; and removing the plating resist layer a step of forming an electrolytic plating layer (for example, an electrolytic copper plating layer) in the region where the circuit is formed; a step of removing the plating resist layer; and an electrolessness existing in a region other than the region where the circuit is formed by flash etching or the like The step of removing the plating layer.

於使用半加成法之本發明之印刷配線板之製造方法之另一實施形態中,包括:準備本發明之金屬箔或本發明之附脫模層之金屬箔、及樹脂基材之步驟;於上述金屬箔或上述附脫模層之金屬箔自表面輪廓處於控制之側或脫模層側積層樹脂基材之步驟;於將上述金屬箔與樹脂基材積層後,藉由蝕刻將上述金屬箔去除或剝離之步驟;對於將上述金屬箔去除或剝離而產生之樹脂基材之露出面或剝離面,利用稀硫酸等將樹脂基材表面洗淨,並設置無電解鍍覆層(例如無電解鍍 銅層)之步驟;於上述無電解鍍覆層上設置抗鍍覆層之步驟;對上述抗鍍覆層進行曝光,其後,將形成電路之區域之抗鍍覆層去除之步驟;於上述抗鍍覆層被去除之上述形成電路之區域設置電解鍍覆層(例如電解鍍銅層)之步驟;將上述抗鍍覆層去除之步驟;及藉由閃蝕等將上述形成電路之區域以外之區域中存在之無電解鍍覆層去除之步驟。 Another embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method includes the steps of: preparing a metal foil of the present invention, a metal foil with a release layer of the present invention, and a resin substrate; a step of laminating a resin substrate on the metal foil or the metal foil with the release layer from the surface profile or the release layer side; after laminating the metal foil and the resin substrate, the metal is etched a step of removing or peeling off the foil; washing the surface of the resin substrate with dilute sulfuric acid or the like on the exposed or peeled surface of the resin substrate obtained by removing or peeling off the metal foil, and providing an electroless plating layer (for example, Electroplating a step of providing a plating resist layer on the electroless plating layer; exposing the plating resist layer, and thereafter removing the plating resist layer in the region where the circuit is formed; a step of removing an electroplated layer (for example, an electrolytic copper plating layer) in a region where the plating layer is removed, a step of removing the plating resist layer, and a step of forming the circuit by flash erosion or the like The step of removing the electroless plating layer present in the region.

如此,於將金屬箔剝離後之樹脂基材之剝離面形成電路,而可製作印刷電路形成基板、半導體封裝用電路形成基板。進而,可使用該電路形成基板製作印刷配線板、半導體封裝。進而,可使用該印刷配線板、半導體封裝製作電子機器。 In this manner, a circuit is formed on the peeling surface of the resin substrate after the metal foil is peeled off, and a printed circuit forming substrate or a circuit forming substrate for semiconductor packaging can be produced. Further, a printed wiring board or a semiconductor package can be produced by using the circuit to form a substrate. Further, an electronic device can be produced using the printed wiring board or the semiconductor package.

另一方面,於使用全加成法之本發明之印刷配線板之製造方法之另一實施形態中,包括:於上述金屬箔或上述附脫模層之金屬箔自表面輪廓處於控制之側或脫模層側積層樹脂基材之步驟;於上述金屬箔或上述附脫模層之金屬箔自表面輪廓處於控制之側或脫模層側積層樹脂基材之步驟;於將上述金屬箔與樹脂基材積層後,藉由蝕刻將上述金屬箔去除或剝離之步驟;對於將上述金屬箔去除或剝離而產生之樹脂基材之露出面或剝離面,利用稀硫酸等將樹脂基材表面洗淨之步驟; 於上述洗淨之樹脂基材表面設置抗鍍覆層之步驟;對上述抗鍍覆層進行曝光,其後,將形成電路之區域之抗鍍覆層去除之步驟;於上述抗鍍覆層被去除之上述形成電路之區域設置無電解鍍覆層(例如亦可為無電解鍍銅層、厚的無電解鍍覆層)之步驟;及將上述抗鍍覆層去除之步驟。 On the other hand, in another embodiment of the method for producing a printed wiring board of the present invention using the full additive method, the metal foil of the metal foil or the release layer is controlled from the surface profile or a step of laminating the resin substrate on the side of the release layer; a step of laminating the resin substrate on the side of the metal foil or the metal foil with the release layer from the surface of the control layer or the side of the release layer; and the metal foil and the resin After the substrate is laminated, the metal foil is removed or peeled off by etching; and the surface of the resin substrate is washed with dilute sulfuric acid or the like on the exposed surface or the peeled surface of the resin substrate which is obtained by removing or peeling the metal foil. Steps; a step of providing a plating resist layer on the surface of the washed resin substrate; exposing the plating resist layer, and thereafter removing the plating resist layer in the region where the circuit is formed; and the plating resist layer is The step of removing the above-mentioned circuit forming region is provided with an electroless plating layer (for example, an electroless copper plating layer or a thick electroless plating layer); and a step of removing the plating resist layer.

再者,於半加成法及全加成法中,存在藉由將上述樹脂基材表面洗淨而發揮容易設置無電解鍍覆層之效果之情形。尤其於脫模層殘留於樹脂基材表面之情形時,藉由該洗淨而將脫模層之一部分或全部自樹脂基材表面去除,故而存在藉由上述樹脂基材表面之洗淨而發揮更容易設置無電解鍍覆層之效果之情形。該洗淨可使用利用公知之洗淨方法(所使用之液體之種類、溫度、液體之塗佈方法等)進行之洗淨。又,較佳為使用可將本發明之脫模層之一部分或全部去除之洗淨方法。 Further, in the semi-additive method and the full-addition method, there is a case where the surface of the resin substrate is washed to exhibit an effect of easily providing an electroless plating layer. In particular, when the release layer remains on the surface of the resin substrate, part or all of the release layer is removed from the surface of the resin substrate by the cleaning, so that the surface of the resin substrate is washed by the surface of the resin substrate. It is easier to set the effect of the electroless plating layer. This washing can be carried out by using a known washing method (the type of liquid to be used, the temperature, the method of applying the liquid, etc.). Further, it is preferred to use a cleaning method which can remove part or all of the release layer of the present invention.

如此,藉由半加成法或全加成法,可於將金屬箔去除或剝離後之樹脂基材之露出面或剝離面形成電路,而製作印刷電路形成基板、半導體封裝用電路形成基板。進而,使用該電路形成基板可製作印刷配線板、半導體封裝。進而,使用該印刷配線板、半導體封裝可製作電子機器。 By the semi-additive method or the full-addition method, a circuit for forming a printed circuit or a circuit for forming a semiconductor package can be produced by forming an electric circuit on the exposed surface or the peeling surface of the resin substrate after the metal foil is removed or peeled off. Further, a printed wiring board or a semiconductor package can be produced by forming a substrate using the circuit. Further, an electronic device can be produced by using the printed wiring board or the semiconductor package.

再者,利用具備XPS(X射線光電子光譜裝置)、EPMA(電子探針微量分析器)、EDX(能量分散型X射線分析)之掃描電子顯微鏡等機器測定金屬箔之表面,若檢測出Si,則可推測金屬箔之表面存在矽烷化合物。又,於金屬箔與樹脂基板之剝離強度(peel strength)為200gf/cm以下之情形時,可推定使用了本案發明之脫模層所可使用之上述矽烷化合 物。 Furthermore, the surface of the metal foil is measured by a scanning electron microscope including an XPS (X-ray photoelectron spectroscopy apparatus), an EPMA (electron probe microanalyzer), and an EDX (energy dispersive X-ray analysis), and if Si is detected, It is presumed that a decane compound is present on the surface of the metal foil. Moreover, when the peel strength of the metal foil and the resin substrate is 200 gf/cm or less, the above-described decane compound which can be used for the release layer of the present invention can be estimated. Things.

又,利用具備XPS(X射線光電子光譜裝置)、EPMA(電子探針微量分析器)、EDX(能量分散型X射線分析)之掃描電子顯微鏡等機器測定金屬箔之表面,於檢測出S,並且金屬箔與樹脂基板之剝離強度(peel strength)為200gf/cm以下之情形時,可推測於金屬箔之表面存在本案發明之脫模層所可使用之上述分子內具有2個以下之巰基之化合物。 Further, the surface of the metal foil is measured by a scanning electron microscope including an XPS (X-ray photoelectron spectroscopy apparatus), an EPMA (electron probe microanalyzer), and an EDX (energy dispersive X-ray analysis) to detect S, and When the peel strength of the metal foil and the resin substrate is 200 gf/cm or less, it is presumed that the compound having two or less sulfhydryl groups in the above-mentioned molecule which can be used for the release layer of the present invention on the surface of the metal foil is presumed. .

又,利用具備XPS(X射線光電子光譜裝置)、EPMA(電子探針微量分析器)、EDX(能量分散型X射線分析)之掃描電子顯微鏡等機器測定金屬箔之表面,於檢測出Al、Ti、Zr,並且金屬箔與樹脂基板之剝離強度(peel strength)為200gf/cm以下之情形時,可推測於金屬箔之表面存在本案發明之脫模層所可使用之上述金屬烷氧化物。 Further, the surface of the metal foil is measured by a scanning electron microscope including an XPS (X-ray photoelectron spectroscopy apparatus), an EPMA (electron probe microanalyzer), and an EDX (energy dispersive X-ray analysis) to detect Al and Ti. When Zr and the peel strength of the metal foil and the resin substrate are 200 gf/cm or less, it is presumed that the metal alkoxide which can be used for the release layer of the present invention is present on the surface of the metal foil.

[實施例] [Examples]

以下,示出實驗例作為本發明之實施例及比較例,但該等實施例係為了使本發明及其優點更好理解而提供者,並不意圖限定發明。 In the following, the experimental examples are shown as examples and comparative examples of the present invention, but they are provided to better understand the present invention and its advantages, and are not intended to limit the invention.

‧生箔(表面處理前之金屬箔(銅箔))之製造 ‧Production of raw foil (metal foil (copper foil) before surface treatment)

關於實施例1~11、比較例2,以如下之電解條件製作表1中所記載之厚度之電解生箔。 With respect to Examples 1 to 11 and Comparative Example 2, electrolytic electrolytic foils having the thicknesses shown in Table 1 were produced under the following electrolysis conditions.

(電解液組成) (electrolyte composition)

Cu 120g/L Cu 120g/L

H2SO4 100g/L H 2 SO 4 100g/L

電解液溫度60℃ Electrolyte temperature 60 ° C

電流密度、電解液線速度、氯化物離子濃度、及添加劑雙(3-磺丙基) 二硫醚(SPS)濃度係記載於表1中。 Current density, electrolyte line speed, chloride ion concentration, and additive bis(3-sulfopropyl) The disulfide (SPS) concentration is described in Table 1.

‧表面處理 ‧Surface treatment

繼而,作為表面處理,以下文所示之各條件對生箔之M面(無光澤面)進行粗化處理、障壁處理(耐熱處理)、防銹處理、矽烷偶合處理、樹脂層形成處理中之任一者或組合進行各處理。繼而,以下文所示之條件於金屬箔(銅箔)之該處理側表面形成脫模層。再者,於未特別言及之情形時,各處理係以該記載順序進行。又,於表1中,各處理之欄中記載為「無」者表示未實施該等處理。 Then, as the surface treatment, each of the conditions shown below is subjected to roughening treatment, barrier treatment (heat treatment), rust prevention treatment, decane coupling treatment, and resin layer formation treatment on the M surface (matte surface) of the green foil. Each of the processes is performed in either or combination. Then, the conditions shown below form a release layer on the treated side surface of the metal foil (copper foil). Furthermore, in the case where it is not specifically mentioned, each process is performed in this order. Further, in Table 1, the description of "None" in the column of each process indicates that the processes are not performed.

(1)粗化處理 (1) roughening treatment

[球狀粗化] [spherical roughening]

使用由Cu、H2SO4、As所構成之以下所記載之銅粗化鍍浴形成球狀粗化粒子。 The spherical roughening particles are formed using a copper roughening plating bath described below composed of Cu, H 2 SO 4 , and As.

‧液組成1 ‧ liquid composition 1

CuSO4.5H2O 78~118g/L CuSO 4 . 5H 2 O 78~118g/L

Cu 20~30g/L Cu 20~30g/L

H2SO4 12g/L H 2 SO 4 12g/L

砷1.0~3.0g/L Arsenic 1.0~3.0g/L

(電解鍍覆溫度1)25~33℃ (electrolytic plating temperature 1) 25~33 °C

(電流條件1)電流密度78A/dm2(浴之極限電流密度以上) (Current condition 1) Current density 78A/dm 2 (above the limit current density of the bath)

(鍍覆時間1)1~45秒 (plating time 1) 1~45 seconds

繼而,為了防止粗化粒子之脫落及提高剝離強度,利用由硫酸、硫酸銅所構成之銅電解浴進行被覆鍍覆。將被覆鍍覆條件記載於下文。 Then, in order to prevent the peeling of the roughened particles and to improve the peeling strength, the coating was performed by a copper electrolytic bath composed of sulfuric acid or copper sulfate. The coating plating conditions are described below.

‧液組成2 ‧ liquid composition 2

CuSO4.5H2O 156g/L CuSO 4 . 5H 2 O 156g/L

Cu 40g/L Cu 40g/L

H2SO4 120g/L H 2 SO 4 120g/L

(電解鍍覆溫度2)40℃ (electrolytic plating temperature 2) 40 ° C

(電流條件2)電流密度:20A/dm2(未達浴之極限電流密度) (Current condition 2) Current density: 20A/dm 2 (Unlimited bath current limit)

(鍍覆時間2)1~60秒 (plating time 2) 1~60 seconds

[微細粗化] [fine coarsening]

首先,以下述條件進行粗化處理。粗化粒子形成時之相對於極限電流密度的比係設為2.70。 First, the roughening treatment was carried out under the following conditions. The ratio of the roughened particles to the limiting current density when formed was set to 2.70.

‧液組成1 ‧ liquid composition 1

CuSO4‧5H2O 19.6~58.9g/L CuSO 4 ‧5H 2 O 19.6~58.9g/L

Cu 5~15g/L Cu 5~15g/L

H2SO4 120g/L H 2 SO 4 120g/L

Na2WO4‧2H2O 6.0~10.4mg/L Na 2 WO 4 ‧2H 2 O 6.0~10.4mg/L

十二烷基硫酸鈉添加量10ppm Sodium lauryl sulfate added 10ppm

(電解鍍覆溫度1)20~35℃ (electrolytic plating temperature 1) 20~35 °C

(電流條件1)電流密度57A/dm2 (current condition 1) current density 57A/dm 2

(鍍覆時間1)1~25秒 (plating time 1) 1~25 seconds

繼而,以下文所示之條件進行正常鍍覆。 Then, normal plating is performed under the conditions shown below.

‧液組成2 ‧ liquid composition 2

CuSO4‧5H2O 156g/L CuSO 4 ‧5H 2 O 156g/L

Cu 40g/L Cu 40g/L

H2SO4 120g/L H 2 SO 4 120g/L

(電解鍍覆溫度2)30~40℃ (electrolytic plating temperature 2) 30~40°C

(電流條件2)電流密度38A/dm2 (current condition 2) current density 38A/dm 2

(鍍覆時間2)1~45秒 (plating time 2) 1~45 seconds

對實施例7應用球狀粗化,對實施例13、14、比較例4應用微細粗化。再者,關於比較例4之微細粗化,應用實施例13、14之粗化處理之2倍之鍍覆時間。 The spherical roughening was applied to Example 7, and the fine coarsening was applied to Examples 13 and 14 and Comparative Example 4. Further, with respect to the fine roughening of Comparative Example 4, the plating time twice as long as the roughening treatment of Examples 13 and 14 was applied.

(2)障壁處理(耐熱處理) (2) Barrier treatment (heat treatment)

關於實施例7、8、13、14、比較例4,以下述條件進行障壁(耐熱)處理,形成黃銅鍍覆層。 With respect to Examples 7, 8, 13, 14 and Comparative Example 4, barrier (heat-resistant) treatment was performed under the following conditions to form a brass plating layer.

(液組成) (liquid composition)

Cu 70g/L Cu 70g/L

Zn 5g/L Zn 5g/L

NaOH 70g/L NaOH 70g/L

NaCN 20g/L NaCN 20g/L

(電解鍍覆條件) (electrolytic plating conditions)

溫度70℃ Temperature 70 ° C

電流密度8A/dm2(多級處理) Current density 8A/dm 2 (multi-stage processing)

(3)防銹處理 (3) Anti-rust treatment

關於所有實施例、比較例,以下述條件進行防銹處理(鋅鉻酸鹽處理),形成防銹處理層。 In all the examples and comparative examples, rust-preventing treatment (zinc chromate treatment) was carried out under the following conditions to form a rust-preventing treatment layer.

(液組成) (liquid composition)

CrO3 2.5g/L CrO 3 2.5g/L

Zn 0.7g/L Zn 0.7g/L

Na2SO4 10g/L Na 2 SO 4 10g/L

pH 4.8 pH 4.8

(鋅鉻酸鹽條件) (zinc chromate conditions)

溫度54℃ Temperature 54 ° C

電流密度0.7As/dm2 Current density 0.7As/dm 2

(4)矽烷偶合處理 (4) decane coupling treatment

關於實施例7、9、10、11、12,以下述條件進行矽烷偶合劑材料塗佈處理,形成矽烷偶合層。 With respect to Examples 7, 9, 10, 11, and 12, a decane coupling agent material coating treatment was carried out under the following conditions to form a decane coupling layer.

(液組成) (liquid composition)

四乙氧基矽烷含量0.4% Tetraethoxy decane content 0.4%

pH 7.5 pH 7.5

塗佈方法 溶液之噴霧 Coating method spray of solution

(5)脫模層之形成 (5) Formation of release layer

關於實施例1~9、11、13、14、比較例1、4,如表1所示般形成下述脫模層A~E中之任一者。 With respect to Examples 1 to 9, 11, 13, and 14, and Comparative Examples 1 and 4, any of the following release layers A to E was formed as shown in Table 1.

[脫模層A] [Release layer A]

於使用噴塗機將矽烷化合物(正丙基三甲氧基矽烷:4wt%)之水溶液塗佈於銅箔之處理表面後,於100℃之空氣中使銅箔表面乾燥5分鐘而形成脫模層A。使矽烷化合物溶解於水中後至進行塗佈前之攪拌時間係設為30 小時,水溶液中之醇濃度係設為0vol%,水溶液之pH係設為3.8~4.2。 After applying an aqueous solution of a decane compound (n-propyltrimethoxydecane: 4% by weight) to the treated surface of the copper foil using a spray coater, the surface of the copper foil was dried in air at 100 ° C for 5 minutes to form a release layer A. . The stirring time before the coating of the decane compound in water is 30. The concentration of the alcohol in the aqueous solution was set to 0 vol%, and the pH of the aqueous solution was set to 3.8 to 4.2.

[脫模層B] [release layer B]

使用1-十二烷硫醇磺酸鈉作為分子內具有2個以下之巰基之化合物,使用噴塗機將1-十二烷硫醇磺酸鈉之水溶液(1-十二烷硫醇磺酸鈉濃度:3wt%)塗佈於銅箔之處理面,然後,於100℃之空氣中使其乾燥5分鐘而製作脫模層B。水溶液之pH係設為5~9。 Using sodium 1-dodecyl mercaptan sulfonate as a compound having 2 or less sulfhydryl groups in the molecule, an aqueous solution of sodium 1-dodecanethiol sulfonate (sodium 1-dodecyl thiolate sulfonate) using a spray coater The concentration: 3 wt%) was applied to the treated surface of the copper foil, and then dried in air at 100 ° C for 5 minutes to prepare a release layer B. The pH of the aqueous solution is set to 5 to 9.

[脫模層C] [release layer C]

使用作為鋁酸鹽化合物之三異丙氧基鋁作為金屬烷氧化物,使用噴塗機將三異丙氧基鋁之水溶液(三異丙氧基鋁濃度:0.04mol/L)塗佈於銅箔之處理面,然後,於100℃之空氣中使其乾燥5分鐘而製作脫模層C。使鋁酸鹽化合物溶解於水中後至進行塗佈前之攪拌時間係設為2小時,水溶液中之醇濃度係設為0vol%,水溶液之pH係設為5~9。 Using aluminum triisopropoxide as an aluminate compound as a metal alkoxide, an aqueous solution of aluminum triisopropoxide (a concentration of aluminum triisopropoxide: 0.04 mol/L) was applied to a copper foil using a spray coater. The treated surface was then dried in air at 100 ° C for 5 minutes to prepare a release layer C. The stirring time before the application of the aluminate compound in water to the coating was 2 hours, the alcohol concentration in the aqueous solution was 0 vol%, and the pH of the aqueous solution was 5 to 9.

[脫模層D] [release layer D]

使用作為鈦酸鹽化合物之正癸基三異丙氧基鈦作為金屬烷氧化物,使用噴塗機將正癸基三異丙氧基鈦之水溶液(正癸基三異丙氧基鈦濃度:0.01mol/L)塗佈於銅箔之處理面,然後,於100℃之空氣中使其乾燥5分鐘而製作脫模層D。使鈦酸鹽化合物溶解於水中後至進行塗佈前之攪拌時間係設為24小時,水溶液中之醇濃度係將甲醇設為20vol%,水溶液之pH係設為5~9。 Using n-decyltriisopropoxide titanium as a titanate compound as a metal alkoxide, an aqueous solution of n-decyltriisopropoxide titanium (n-decyltriisopropoxide titanium concentration: 0.01 using a spray coater) The mol/L) was applied to the treated surface of the copper foil, and then dried in air at 100 ° C for 5 minutes to prepare a release layer D. The stirring time before the titanate compound was dissolved in water until the application was carried out was 24 hours, and the alcohol concentration in the aqueous solution was 20 vol% of methanol, and the pH of the aqueous solution was set to 5 to 9.

[脫模層E] [release layer E]

使用作為鋯酸鹽化合物之正丙基三正丁氧基鋯作為金屬烷氧化物,使用噴塗機將正丙基三正丁氧基鋯之水溶液(正丙基三正丁氧基鋯濃度:0.04 mol/L)塗佈於銅箔之處理面,然後,於100℃之空氣中使其乾燥5分鐘而製作脫模層E。使鋯酸鹽化合物溶解於水中後至進行塗佈前之攪拌時間係設為12小時,水溶液中之醇濃度係設為0vol%,水溶液之pH係設為5~9。 Using n-propyltri-n-butoxyzirconium as a zirconate compound as a metal alkoxide, a spray solution of an aqueous solution of n-propyltri-n-butoxyzirconium (n-propyltri-n-butoxyzirconium concentration: 0.04) The mol/L was applied to the treated surface of the copper foil, and then dried in air at 100 ° C for 5 minutes to prepare a release layer E. The stirring time before the zirconate compound was dissolved in water until the application was carried out was 12 hours, the alcohol concentration in the aqueous solution was set to 0 vol%, and the pH of the aqueous solution was set to 5 to 9.

(6)樹脂層形成處理 (6) Resin layer formation treatment

關於樣品No.12、30、48,於障壁處理、防銹處理、矽烷偶合劑材料塗佈、脫模層形成後,進而以下述之條件形成樹脂層。 In Sample Nos. 12, 30, and 48, after the barrier treatment, the rustproof treatment, the decane coupling agent material application, and the release layer formation, the resin layer was further formed under the following conditions.

(樹脂合成例) (Resin Synthesis Example)

向於裝附有不鏽鋼製之碇型攪拌棒、氮氣導入管及活栓之捕集器上安裝有裝上球形冷卻管之回流冷卻器的2升之三口燒瓶中添加3,4,3',4'-聯苯四羧酸二酐117.68g(400mmol)、1,3-雙(3-胺基苯氧基)苯87.7g(300mmol)、γ-戊內酯4.0g(40mmol)、吡啶4.8g(60mmol)、N-甲基-2-吡咯啶酮(以下記為NMP)300g、甲苯20g,於180℃加熱1小時後冷卻至室溫附近,其後添加3,4,3',4'-聯苯四羧酸二酐29.42g(100mmol)、2,2-雙{4-(4-胺基苯氧基)苯基}丙烷82.12g(200mmol)、NMP200g、甲苯40g,於室溫下混合1小時後,於180℃加熱3小時,獲得固形物成分38%之嵌段共聚合聚醯亞胺。關於該嵌段共聚合聚醯亞胺,下文所示之通式(1):通式(2)=3:2,數量平均分子量為70000,重量平均分子量為150000。 Add 3, 4, 3', 4 to a 2-liter three-necked flask equipped with a stainless steel crucible stir bar, a nitrogen inlet tube, and a stopcock, and a reflux cooler equipped with a spherical cooling tube. '-Biphenyltetracarboxylic dianhydride 117.68g (400mmol), 1,3-bis(3-aminophenoxy)benzene 87.7g (300mmol), γ-valerolactone 4.0g (40mmol), pyridine 4.8g (60 mmol), N-methyl-2-pyrrolidone (hereinafter referred to as NMP) 300 g, and toluene 20 g, heated at 180 ° C for 1 hour, cooled to near room temperature, and then added 3, 4, 3', 4' -biphenyltetracarboxylic dianhydride 29.42g (100mmol), 2,2-bis{4-(4-aminophenoxy)phenyl}propane 82.12g (200mmol), NMP200g, toluene 40g, at room temperature After mixing for 1 hour, it was heated at 180 ° C for 3 hours to obtain a block copolymerized polyimine of 38% of a solid content. With respect to the block copolymerized polyimine, the following general formula (1): general formula (2) = 3:2, a number average molecular weight of 70,000, and a weight average molecular weight of 150,000.

利用NMP將合成例中所獲得之嵌段共聚合聚醯亞胺溶液進一步稀釋,製成固形物成分10%之嵌段共聚合聚醯亞胺溶液。於該嵌段共聚合聚醯亞胺溶液中,將雙(4-馬來醯亞胺苯基)甲烷(BMI-H、K‧I Chemical Industry)設為固形物成分重量比率35,將嵌段共聚合聚醯亞胺設為固形物成分重量比率65(即,樹脂溶液中所含之雙(4-馬來醯亞胺苯基)甲烷固形物成分重量:樹脂溶液中所含之嵌段共聚合聚醯亞胺固形物成分重量=35:65),於60℃溶解混合20分鐘而製成樹脂溶液。其後,於實施例12之脫模層形成面塗佈上述樹脂溶液,於氮氣環境下,於120℃進行3分鐘乾燥處理,並於160℃進行3分鐘乾燥處理後,最後於300℃進行2分鐘加熱處理,製作具備樹脂層之銅箔。再者,樹脂層之厚度係設為2μm。 The block copolymerized polyimine solution obtained in the synthesis example was further diluted with NMP to prepare a block copolymerized polyimine solution having a solid content of 10%. In the block copolymerized polyimine solution, bis(4-maleimidophenyl)methane (BMI-H, K‧I Chemical Industry) is set as a solid component weight ratio of 35, and the block is The copolymerized polyimine is set to have a solid component weight ratio of 65 (ie, the weight of the bis(4-maleimidophenyl)methane solid component contained in the resin solution: the total amount of the block contained in the resin solution The polymerized polyimine solid content component weight = 35:65) was dissolved and mixed at 60 ° C for 20 minutes to prepare a resin solution. Thereafter, the resin solution was applied onto the release layer forming surface of Example 12, dried in a nitrogen atmosphere at 120 ° C for 3 minutes, dried at 160 ° C for 3 minutes, and finally at 300 ° C. 2 The copper foil having a resin layer was produced by heat treatment in minutes. Further, the thickness of the resin layer was set to 2 μm.

(7)各種評價 (7) Various evaluations

‧金屬箔之表面輪廓之評價 ‧Evaluation of the surface profile of metal foil

對於各實施例、比較例之金屬箔,使用小阪研究所股份有限公司製造之接觸粗糙度計Surfcorder SE-3C,依據JIS B0601-1982,對金屬箔(銅箔)M面側表面(生銅箔之析出面側、即與電解轉筒面相反之側)測得十點平均粗糙度Rz。於測定標準長度0.8mm、評價長度4mm、截止值0.25mm、饋送速度0.1mm/秒之條件下,於與金屬箔(銅箔)之製造方向垂直之方 向(TD)上改變測定位置,各進行3次,將3次測定之平均值設為金屬箔表面之粗糙度(十點平均粗糙度)Rz。再者,於進行了粗化處理等表面處理之情形時,對表面處理後之經表面處理之側之表面進行上述測定,於形成有脫模層之情形時,對設置脫模層後之設置有脫模層之側之表面進行上述測定。 For the metal foil of each of the examples and the comparative examples, the contact roughness meter Surfcorder SE-3C manufactured by Kosaka Research Institute Co., Ltd. was used, and the metal foil (copper foil) M surface side surface (raw copper foil) was used in accordance with JIS B0601-1982. The ten-point average roughness Rz was measured on the side of the deposition surface, that is, the side opposite to the surface of the electrorotation drum. It is perpendicular to the manufacturing direction of the metal foil (copper foil) under the conditions of a standard length of 0.8 mm, an evaluation length of 4 mm, a cutoff value of 0.25 mm, and a feed speed of 0.1 mm/sec. The measurement position was changed to (TD), and each was performed three times, and the average value of the three measurements was defined as the roughness (ten point average roughness) Rz of the surface of the metal foil. Further, in the case where surface treatment such as roughening treatment is performed, the surface of the surface treated side after the surface treatment is subjected to the above measurement, and in the case where the release layer is formed, the setting after the release layer is provided The above measurement was carried out on the surface having the side of the release layer.

‧金屬箔表面之金屬粒子密度測量(線密度) ‧Metal particle density measurement on metal foil surface (linear density)

對於各實施例、比較例之金屬箔,使用SEM(掃描型電子顯微鏡)自金屬箔表面之正上方放大至倍率3000倍來拍攝照片。於所獲得之照片上描繪直線,對落在上述直線上之金屬粒子之個數進行計數,換算為上述直線每10μm長度之粒子數(粒子密度=個/10μm)=X,算出下述式(1)所表示之數值。再者,上述測定係將寬40μm×長30μm之大小設為一個測定視野。並且,藉由如下方式進行:對於3個測定視野,針對各測定視野對落在寬度方向上40μm長度、長度方向上30μm長度、測定視野之2個對角線方向上各50μm長度之合計長度170μm之直線之金屬粒子之個數進行計數。繼而,針對各測定視野,將所計數之金屬粒子之合計個數除以17,藉此算出各測定視野中之X,將3個測定視野之算術平均值設為X之值。又,上述測定中,對直線僅落在金屬粒子之端之部分之金屬粒子亦進行計數,且包含於個數中。又,於在一個金屬粒子與另一金屬粒子之間觀察到線狀邊界之情形時,一個金屬粒子與另一金屬粒子係設為不同之金屬粒子。 The metal foil of each of the examples and the comparative examples was photographed by SEM (scanning electron microscope) from the directly above the surface of the metal foil to a magnification of 3000 times. A straight line is drawn on the obtained photograph, and the number of metal particles falling on the straight line is counted, and the number of particles per 100 μm length of the straight line (particle density = one/10 μm) = X is calculated, and the following formula is calculated ( 1) The value indicated. In addition, the above measurement system has a size of 40 μm in width × 30 μm in length as one measurement field of view. In addition, for each of the three measurement fields, the total length of each of the measurement fields is 40 μm in the width direction, 30 μm in the longitudinal direction, and 50 μm in length in the two diagonal directions of the measurement field of view. The number of metal particles in a straight line is counted. Then, for each measurement field of view, the total number of the counted metal particles is divided by 17, thereby calculating X in each measurement field of view, and setting the arithmetic mean value of the three measurement fields to the value of X. Further, in the above measurement, the metal particles in a portion where the straight line only falls on the end of the metal particles are also counted and included in the number. Further, when a linear boundary is observed between one metal particle and another metal particle, one metal particle and another metal particle are different from each other.

‧金屬箔表面之金屬粒子密度測量(面密度) ‧Metal particle density measurement on the surface of metal foil (area density)

對於各實施例、比較例之金屬箔,使用SEM(掃描型電子顯微鏡)自金屬箔表面之正上方放大至倍率10000倍來拍攝照片。於所獲得之照片上對可確認之金屬粒子數進行計數,換算為每10μm2之粒子數(粒子密度=個/10μm2)=Z,算出下述式(2)所表示之數值。再者,上述測定係將寬12.5μm×長9μm之大小設為一個測定視野。並且,對於3個測定視野,對金屬粒子數進行計數,針對各測定視野算出每10μm2之粒子數。繼而,將3個測定視野中所獲得之每10μm2之粒子數之算術平均值設為Z之值。僅一部分包含於上述測定視野中之金屬粒子亦作為一個金屬粒子而計數。又,於在一個金屬粒子與另一金屬粒子之間觀察到線狀邊界之情形時,一個金屬粒子與另一金屬粒子係設為不同之金屬粒子。 The metal foil of each of the examples and the comparative examples was photographed by SEM (scanning electron microscope) from the directly above the surface of the metal foil to a magnification of 10,000 times. The number of metal particles that can be confirmed is counted in the obtained photograph, and the number of particles per 10 μm 2 (particle density = one/10 μm 2 ) = Z is calculated, and the numerical value represented by the following formula (2) is calculated. In addition, the above measurement system has a size of 12.5 μm in width × 9 μm in length as one measurement field of view. Further, the number of metal particles was counted for the three measurement fields, and the number of particles per 10 μm 2 was calculated for each measurement field of view. Then, the arithmetic mean of the number of particles per 10 μm 2 obtained in the three measurement fields was set to the value of Z. Only a part of the metal particles contained in the above-mentioned measurement field of view is also counted as one metal particle. Further, when a linear boundary is observed between one metal particle and another metal particle, one metal particle and another metal particle are different from each other.

‧積層體之製造 ‧Production of laminates

將以下之樹脂基材1~3之各者貼合於各金屬箔之表面處理側表面。 Each of the following resin substrates 1 to 3 was bonded to the surface of the surface of each metal foil.

基材1:Mitsubishi Gas Chemical(股份有限公司)製造之GHPL-830 MBT Substrate 1: GHPL-830 MBT manufactured by Mitsubishi Gas Chemical Co., Ltd.

基材2:日立化成工業(股份有限公司)製造之679-FG Substrate 2: 679-FG manufactured by Hitachi Chemical Co., Ltd.

基材3:Sumitomo Bakelite(股份有限公司)製造之EI-6785TS-F Substrate 3: EI-6785TS-F manufactured by Sumitomo Bakelite Co., Ltd.

積層壓製之溫度、壓力、時間係使用各基材製造商之推薦條件。 The temperature, pressure, and time of laminate pressing are recommended by the manufacturer of each substrate.

‧金屬箔之剝離性之評價 ‧ Evaluation of the peelability of metal foil

對於積層體,依據IPC-TM-650,藉由拉伸試驗機Autograph 100測定將樹脂基材自金屬箔剝離時之常態剝離強度,以如下標準評價表面處理銅箔之剝離性。 For the laminate, the normal peel strength when the resin substrate was peeled off from the metal foil was measured by a tensile tester Autograph 100 according to IPC-TM-650, and the peeling property of the surface-treated copper foil was evaluated by the following criteria.

○:為2~200gf/cm之範圍。 ○: a range of 2 to 200 gf/cm.

×:未達2gf/cm或超過200gf/cm。 ×: Less than 2 gf/cm or more than 200 gf/cm.

‧樹脂之破壞模式之評價 ‧Evaluation of the failure mode of resin

利用電子顯微鏡觀察上述剝離後之樹脂基材之剝離面,對樹脂之破壞模式(凝聚、界面、凝聚與界面之混合存在)進行觀察。關於樹脂之破壞模式,「界面」表示於銅箔與樹脂之界面發生剝離,「凝聚」表示剝離強度過強而樹脂遭到破壞,「混合存在」表示上述「界面」與「凝聚」混合存在。 The peeling surface of the resin substrate after peeling was observed with an electron microscope, and the failure mode of the resin (coagulation, interface, aggregation, and mixing of the interface) was observed. Regarding the failure mode of the resin, the "interface" indicates that the interface between the copper foil and the resin is peeled off, and "coagulation" indicates that the peel strength is too strong and the resin is broken. "Mixed presence" indicates that the "interface" and "aggregation" are mixed.

‧電路剝離、基板鼓起之評價 ‧ Evaluation of circuit stripping and substrate bulging

使用鍍覆液[液組成、Cu:50g/L、H2SO4:50g/L、Cl:60ppm)於上述剝離後之樹脂基材1~3之剝離面形成銅鍍覆圖案(線/間隙=40μm/40μm)(例1)。又,使用含有導電膏之油墨,藉由噴墨而於上述剝離後之樹脂基材之剝離面形成印刷圖案(線/間隙=40μm/40μm)(例2)。又,將由液晶聚合物所構成之樹脂層(假定為構成增層之樹脂)層壓於上述剝離後之樹脂基材之剝離面(例3)。 Using a plating solution [liquid composition, Cu: 50 g/L, H 2 SO 4 : 50 g/L, Cl: 60 ppm), a copper plating pattern (line/gap) was formed on the peeling faces of the resin substrates 1 to 3 after the above peeling. = 40 μm / 40 μm) (Example 1). Further, a printing pattern (line/gap=40 μm/40 μm) was formed on the peeling surface of the resin substrate after the peeling by inkjet using an ink containing a conductive paste (Example 2). Further, a resin layer composed of a liquid crystal polymer (assuming a resin constituting the build-up layer) is laminated on the peeling surface of the peeled resin substrate (Example 3).

繼而,分別藉由可靠性試驗(250℃±10℃×1小時之加熱試驗)確認是否產生電路剝離或基板鼓起。再者,評價樣品之大小係設為250mm×250mm,每個樣品編號係對3個樣品進行測定。 Then, it was confirmed by a reliability test (250 ° C ± 10 ° C × 1 hour heating test) whether or not circuit peeling or substrate bulging occurred. Further, the size of the evaluation sample was set to 250 mm × 250 mm, and each sample number was measured for three samples.

將未產生電路剝離及基板鼓起者評價為「◎」。將雖然產生少量電路剝離或基板鼓起(1個樣品中為3處以下),但若對使用之位置進行挑選,則可作為製品使用者評價為「○」。又,將產生大量(1個樣品中超過3處)電路剝離或基板鼓起而無法作為製品使用者評價為「×」。 The person who did not have the circuit peeling and the substrate bulging was evaluated as "◎". Although a small amount of circuit peeling or substrate bulging occurs (three or less in one sample), if the position to be used is selected, it can be evaluated as "○" as a product user. Further, a large number (more than three in one sample) were peeled off or the substrate was bulged, and it was not evaluated as "x" as a product user.

將各試驗條件及評價結果示於表1及2。 The test conditions and evaluation results are shown in Tables 1 and 2.

(評價結果) (Evaluation results)

實施例1~15均係於具有上述式(1)滿足2~9之表面輪廓之金屬箔、或具有上述式(2)滿足2~16之表面輪廓之金屬箔之具有該表面輪廓之面設置有脫模層之例,將金屬箔自樹脂基材物理性剝離時之剝離性良好,可良好地抑制電路剝離、基板鼓起之產生。 Each of Examples 1 to 15 is a metal foil having a surface profile satisfying the above formula (1) and satisfying the surface profile of 2 to 9, or a metal foil having the surface profile of the above formula (2) satisfying 2 to 16 and having the surface profile In the case of the release layer, when the metal foil is physically peeled off from the resin substrate, the peeling property is good, and the occurrence of circuit peeling and substrate bulging can be satisfactorily suppressed.

比較例1及3中,關於金屬箔之表面輪廓,上述式(1)未達2,又,上述式(2)未達2,故而無法良好地抑制電路剝離及/或基板鼓起之產生。 In Comparative Examples 1 and 3, the surface roughness of the metal foil was less than 2 in the above formula (1), and the above formula (2) was less than 2, so that the peeling of the circuit and/or the occurrence of the substrate bulging could not be satisfactorily suppressed.

比較例2及4中,關於金屬箔之表面輪廓,上述式(1)超過9,又,上述式(2)超過16,因此,將金屬箔自樹脂基材物理性剝離時之剝離性不良,無法良好地抑制電路剝離、基板鼓起之產生。 In Comparative Examples 2 and 4, the surface roughness of the metal foil is more than 9 in the above formula (1), and the above formula (2) is more than 16. Therefore, when the metal foil is physically peeled off from the resin substrate, the peeling property is poor. The occurrence of circuit peeling and substrate bulging cannot be satisfactorily suppressed.

Claims (22)

一種金屬箔,其具有如下之表面輪廓:於對至少一表面放大至倍率3000倍來進行SEM攝影而獲得之照片上描繪直線而對落在上述直線上之金屬粒子之個數進行計數時,將上述直線每10μm長度之粒子數(粒子密度=個/10μm)設為X,將上述金屬箔表面之粗糙度Rz設為Y,此時下述式(1)滿足2~9, A metal foil having a surface profile which is obtained by drawing a straight line on a photograph obtained by SEM photographing at least one surface to a magnification of 3000 times and counting the number of metal particles falling on the straight line The number of particles (particle density = one/10 μm) per 10 μm length of the straight line is X, and the roughness Rz of the surface of the metal foil is Y, and the following formula (1) satisfies 2 to 9, 一種金屬箔,其具有如下之表面輪廓:於對至少一表面放大至倍率10000倍來進行SEM攝影而獲得之照片上對可確認之金屬粒子數進行計數時,將每10μm2之粒子數(粒子密度=個/10μm2)設為Z,將上述金屬箔表面之粗糙度Rz設為Y,此時下述式(2)滿足2~16, A metal foil having a surface profile: a number of particles per 10 μm 2 when counting the number of identifiable metal particles on a photograph obtained by SEM imaging at least 10,000 times magnification of at least one surface (particles) Density = one/10 μm 2 ) is set to Z, and the roughness Rz of the surface of the above metal foil is set to Y, and the following formula (2) satisfies 2 to 16, 如申請專利範圍第1或2項之金屬箔,其厚度為9~70μm。 The metal foil of claim 1 or 2 has a thickness of 9 to 70 μm. 如申請專利範圍第1或2項之金屬箔,其中,上述金屬箔為銅箔。 The metal foil according to claim 1 or 2, wherein the metal foil is a copper foil. 如申請專利範圍第1或2項之金屬箔,其中,於上述金屬箔之具有表面輪廓之面設置有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一種以上之層。 The metal foil according to claim 1 or 2, wherein the surface of the metal foil having a surface profile is provided with a group selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a decane coupling treatment layer. One or more layers. 如申請專利範圍第5項之金屬箔,其中,於上述選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一種以上之層之表面設置有樹脂層。 The metal foil according to claim 5, wherein a resin layer is provided on a surface of the layer selected from the group consisting of a heat resistant layer, a rustproof layer, a chromate treatment layer, and a decane coupling treatment layer. . 如申請專利範圍第6項之金屬箔,其中,上述樹脂層係接著用樹脂、 底塗劑或半硬化狀態之樹脂。 The metal foil of claim 6, wherein the resin layer is followed by a resin, Primer or semi-hardened resin. 一種附脫模層之金屬箔,其具備:申請專利範圍第1至7項中任一項之金屬箔;及脫模層,其設置於上述金屬箔之具有表面輪廓之面側,且使自上述脫模層側向上述金屬箔貼合有樹脂基材時之上述樹脂基材可剝離。 A metal foil with a release layer, comprising: a metal foil according to any one of claims 1 to 7; and a release layer provided on a surface side of the metal foil having a surface profile, and When the resin layer is bonded to the metal foil on the side of the mold release layer, the resin substrate can be peeled off. 如申請專利範圍第8項之附脫模層之金屬箔,其中,上述脫模層係單獨使用或組合使用數種下式所表示之鋁酸鹽化合物、鈦酸鹽化合物、鋯酸鹽化合物、該等之水解生成物、該水解生成物之縮合物而成,(R1)m-M-(R2)n(式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基,M為Al、Ti、Zr中之任一者,n為0、1或2,m為1以上且M之價數以下之整數,至少一個R1為烷氧基;再者,m+n為M之價數,即,於Al之情形時為3,於Ti、Zr之情形時為4)。 The metal foil with a release layer according to the eighth aspect of the invention, wherein the release layer is used alone or in combination of several aluminate compounds, titanate compounds, zirconate compounds represented by the following formulas, And a condensate of the hydrolyzed product and the hydrolyzate, (R 1 ) m -M-(R 2 ) n (wherein R 1 is an alkoxy group or a halogen atom, and R 2 is selected from an alkane a hydrocarbon group in a group consisting of a group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms substituted with any one of the groups of the halogen atom, and M is any one of Al, Ti, and Zr, n is 0, 1 or 2, m is an integer of 1 or more and a valence of M or less, and at least one R 1 is an alkoxy group; further, m+n is a valence of M, that is, in the case of Al 3. In the case of Ti and Zr, it is 4). 如申請專利範圍第8項之附脫模層之金屬箔,其中,上述脫模層係單獨使用或組合使用數種下式所表示之矽烷化合物、其水解生成物、該水解生成物之縮合物而成, (式中,R1為烷氧基或鹵素原子,R2為選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基,R3及R4分別獨立地為鹵素原子、或烷氧基、或者選自由烷基、環烷基及芳基所組成之群中之烴基、或一個以上之氫原子被取代為鹵素原子之該等基中之任一烴基)。 The metal foil of the release layer of the eighth aspect of the invention, wherein the mold release layer is used alone or in combination of several decane compounds represented by the following formula, hydrolyzed products thereof, and condensates of the hydrolysis products. Made out, (wherein R 1 is an alkoxy group or a halogen atom, R 2 is a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group, and an aryl group, or one or more hydrogen atoms are substituted with a halogen atom; Any of the hydrocarbon groups in the group, R 3 and R 4 are each independently a halogen atom, or an alkoxy group, or a hydrocarbon group selected from the group consisting of an alkyl group, a cycloalkyl group and an aryl group, or one or more hydrogen atoms Any one of these groups substituted with a halogen atom). 如申請專利範圍第8項之附脫模層之金屬箔,其中,上述脫模層係使用分子內具有2個以下之巰基之化合物而成。 The metal foil with a release layer according to Item 8 of the patent application, wherein the release layer is a compound having two or less sulfhydryl groups in the molecule. 如申請專利範圍第8至11項中任一項之附脫模層之金屬箔,其中,於上述脫模層表面設置有樹脂層。 The metal foil with a release layer according to any one of claims 8 to 11, wherein a resin layer is provided on the surface of the release layer. 如申請專利範圍第12項之附脫模層之金屬箔,其中,上述樹脂層係接著用樹脂、底塗劑或半硬化狀態之樹脂。 The metal foil with a release layer according to claim 12, wherein the resin layer is followed by a resin, a primer or a resin in a semi-hardened state. 一種積層體,其具備:申請專利範圍第1至7項中任一項之金屬箔、或申請專利範圍第8至13項中任一項之附脫模層之金屬箔、及設置於上述金屬箔或上述附脫模層之金屬箔的樹脂基材。 A laminate comprising: a metal foil according to any one of claims 1 to 7 or a metal foil with a release layer according to any one of claims 8 to 13; A resin substrate of a foil or a metal foil with the above release layer. 如申請專利範圍第14項之積層體,其中,上述樹脂基材為預浸料,或者含有熱硬化性樹脂。 The laminate according to claim 14, wherein the resin substrate is a prepreg or a thermosetting resin. 一種印刷配線板,其具備申請專利範圍第1至7項中任一項之金屬箔、或申請專利範圍第8至13項中任一項之附脫模層之金屬箔。 A printed wiring board comprising the metal foil of any one of claims 1 to 7 or the metal foil of the release layer of any one of claims 8 to 13. 一種半導體封裝,其具備申請專利範圍第16項之印刷配線板。 A semiconductor package comprising the printed wiring board of claim 16 of the patent application. 一種電子機器,其具備申請專利範圍第16項之印刷配線板或申請專利範圍第17項之半導體封裝。 An electronic device comprising the printed wiring board of claim 16 or the semiconductor package of claim 17 of the patent application. 一種印刷配線板之製造方法,其具備下述步驟:於申請專利範圍第1至7項中任一項之金屬箔、或申請專利範圍第8至13項中任一項之附脫模層之金屬箔貼合樹脂基材之步驟;藉由不進行蝕刻而將上述金屬箔或上述附脫模層之金屬箔自上述樹脂基材剝離,而獲得於剝離面轉印有上述金屬箔或上述附脫模層之金屬箔之表面輪廓之樹脂基材之步驟;及於上述轉印有表面輪廓之樹脂基材之上述剝離面側形成電路之步驟。 A method of manufacturing a printed wiring board, comprising: the metal foil according to any one of claims 1 to 7 or the release layer of any one of claims 8 to 13; a step of bonding a metal foil to a resin substrate; and peeling the metal foil or the metal foil with the release layer from the resin substrate without etching, thereby obtaining the metal foil or the attached surface on the peeling surface a step of forming a resin substrate on the surface profile of the metal foil of the release layer; and a step of forming a circuit on the side of the peeling surface of the resin substrate on which the surface profile is transferred. 如申請專利範圍第19項之印刷配線板之製造方法,其中,形成於上述轉印有表面輪廓之樹脂基材之上述剝離面側之電路係鍍覆圖案或印刷圖案。 The method for producing a printed wiring board according to claim 19, wherein the circuit-formed pattern or printed pattern formed on the peeling surface side of the resin substrate on which the surface profile is transferred is formed. 一種印刷配線板之製造方法,其具備下述步驟:於申請專利範圍第1至7項中任一項之金屬箔、或申請專利範圍第8至13項中任一項之附脫模層之金屬箔貼合樹脂基材之步驟;藉由不進行蝕刻而將上述金屬箔或上述附脫模層之金屬箔自上述樹脂基材剝離,而獲得於剝離面轉印有上述金屬箔或上述附脫模層之金屬箔之表面輪廓之樹脂基材之步驟;及於上述轉印有表面輪廓之樹脂基材之上述剝離面側設置增層之步驟。 A method of manufacturing a printed wiring board, comprising: the metal foil according to any one of claims 1 to 7 or the release layer of any one of claims 8 to 13; a step of bonding a metal foil to a resin substrate; and peeling the metal foil or the metal foil with the release layer from the resin substrate without etching, thereby obtaining the metal foil or the attached surface on the peeling surface a step of forming a resin substrate on the surface profile of the metal foil of the release layer; and a step of providing a layer on the side of the release surface of the resin substrate on which the surface profile is transferred. 如申請專利範圍第21項之印刷配線板之製造方法,其中,構成上述增層之樹脂含有液晶聚合物或聚四氟乙烯。 The method for producing a printed wiring board according to claim 21, wherein the resin constituting the layered layer contains a liquid crystal polymer or polytetrafluoroethylene.
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