TW201528477A - E-fuse structure of semiconductor device - Google Patents

Abstract

Provided is an e-fuse structure of a semiconductor device. the e-fuse structure may include a fuse link formed of a first metal material to connect a cathode with an anode, a capping dielectric covering a top surface of the fuse link, and a dummy metal plug penetrating the capping dielectric and being in contact with a portion of the fuse link. The dummy metal plug may include a metal layer and a barrier metal layer interposed between the metal layer and the fuse link. The barrier metal layer may be formed of a second metal material different from the first metal material.

Description

Electrical fuse structure of semiconductor component [Cross-reference to related applications]

Korean Patent Application entitled "E-Fuse Structure of Semiconductor Device", filed on October 11, 2013, and filed on Feb. 26, 2014, and entitled "E-Fuse Structure of Semiconductor Device" The entire contents of the Japanese Patent Publication No. 10-2014-0022774 are herein incorporated by reference.

One or more embodiments described herein are related to an electrical fuse structure of a semiconductor component.

Fuses have been used in a variety of applications in semiconductor wafer fabrication and design. For example, in a memory component, a fuse has been used to replace a defective memory cell with a redundant memory cell during a repair procedure. This replacement helps increase manufacturing yield. Fuses have also been used to record the manufacturing history of wafers during the wafer identification process. Fuses have also been used to optimize wafer characteristics during post-manufacturing operations of wafer customization programs.

The fuse can be classified as a laser fuse or an electric fuse. In the laser fuse, will The laser beam is used to cut off the electrical connection. In an electrical fuse, current is used for this purpose.

According to one embodiment, an electrical fuse structure of a semiconductor component includes: a fuse link of a first metal material connecting a cathode and an anode; a cap dielectric covering a top surface of the fuse link; and penetrating the cover a dummy metal plug covering the dielectric and contacting the fuse link, the dummy metal plug including a barrier metal layer between the metal layer and the fuse link, wherein the barrier metal layer A second metal material different from the first metal material is included. The first metallic material may have a conductivity greater than the electrical conductivity of the second metallic material.

The first metal material may include at least one of tungsten, aluminum, copper, or a copper alloy, and the second metal material may include at least one of Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN, or a combination thereof .

The electrical fuse structure is a fuse chain carrying a stylized current, and the fuse link has a gap between the anode and the dummy metal plug in a stylized state. The distance between the void and the dummy metal plug may be less than the distance between the void and the anode. The width of the lower portion of the dummy metal plug may be smaller than the upper width of the fuse link.

The width of the lower portion of the dummy metal plug may be greater than the upper width of the fuse link, and the dummy metal plug may contact the top surface and the side surface of the fuse link. The barrier metal layer covers the bottom and side surfaces of the metal layer. The barrier metal layer on the bottom surface of the metal layer may be thicker than the barrier metal layer on one or both of the side surfaces of the metal layer.

The bottom surface of the dummy metal plug can be between the top surface and the bottom surface of the fuse link. The metal layer may include a contact portion having a first width and has a large An interconnect portion of a second width of the first width. The fuse link can have a width substantially equal to or less than the width of the anode and cathode.

The electrical fuse structure can include a dummy metal pattern on the top surface of the dummy metal plug, and the dummy metal pattern can have a thickness greater than the thickness of the fuse link. A plurality of dummy fuse links may be at respective sides of the fuse link, and the dummy metal patterns may have a width that is less than a distance between the dummy fuse links. A plurality of dummy metal plugs can be between the anode and the cathode.

The dummy metal plug can extend in a direction substantially perpendicular to the longitudinal axis of the fuse link. The anode and cathode can be at different levels, and the fuse link and the dummy metal plug can be between the anode and the cathode. The anode and cathode may be at a first level relative to a top surface of the underlying layer, the fuse link may be at a second level relative to a top surface of the underlying layer, and the second level may be higher than the first level.

The electrical fuse structure can comprise a transistor on the semiconductor substrate, and the transistor can comprise a gate electrode comprising a first metal material and the transistor is substantially at the same level as the fuse link.

The electrical fuse structure can include a plurality of metal lines spaced apart from the semiconductor substrate, and the metal lines can comprise the first metal material and be at substantially the same level as the fuse link. The fuse link can carry a programmed current, and the dummy metal plug can change the temperature gradient in the fuse link during the supply of the programmed current. The fuse link may include a first region in contact with the dummy metal plug and a second region in contact with the cap dielectric, and the temperature of the fuse link may have a maximum value at the second region during supply of the stylized current .

The fuse link can include a first region in contact with the dummy metal plug and a second region in contact with the dielectric of the cover, the electrical fuse structure can carry a stylized current, and during the supply of the stabilizing current, the fuse The first electricity caused by electromigration at the first zone of the wire chain The driving force may be different from the second electric driving force caused by electromigration at the second region of the fuse link.

In accordance with another embodiment, an electrical fuse structure of a semiconductor component includes: a fuse link of a first metal material connecting a cathode and an anode; an interlayer insulating layer covering the anode, the cathode, and the fuse link; and a top surface of the fuse link a cap dielectric between the interlayer insulating layers, the cap dielectric includes an insulating material different from the interlayer insulating layer; and a dummy metal plug penetrating the interlayer insulating layer and the cap dielectric and contacting the fuse link, The dummy metal plug includes a barrier metal layer between the metal layer and the fuse link, wherein the barrier metal layer comprises a second metal material different from the first metal material. The first metallic material may have a conductivity greater than the electrical conductivity of the second metallic material.

The first metal material may include at least one of tungsten, aluminum, copper, or a copper alloy, and the second metal material may include at least one of Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN, or a combination thereof . The barrier metal layer may cover the bottom surface and the side surface of the metal layer. The barrier metal layer on the bottom surface of the metal layer may be thicker than the barrier metal layer on the side surface of the metal layer.

The fuse link can carry a programmed current, and the fuse link can have a gap between the anode and the dummy metal plug in the stylized state. The distance between the void and the dummy metal plug may be less than the distance between the void and the anode.

In accordance with another embodiment, an electrical fuse structure of a semiconductor component includes: a fuse link to connect the anode to the cathode and to be programmed based on a programmed current; and a dummy metal plug in contact with the fuse link, wherein the fuse link Including a first metal material, the dummy metal plug includes a second metal material different from the first metal material, and the dummy metal plug changes electrical and thermal driving force during the supply of the stabilizing current to the fuse chain, and wherein The thermal driving force is based on electromigration and thermal migration in the fuse link.

The dummy metal plug may include a barrier metal layer between the metal layer and the fuse link, and the barrier metal layer may include a second metal material. The first metallic material may have a conductivity greater than the electrical conductivity of the second metallic material. The total driving force may have a maximum between the anode and the dummy metal plug during the supply of the stabilizing current to the fuse link, and the total driving force may be based on the sum of the electrical and thermal driving forces.

The electric fuse structure may include: an interlayer insulating layer covering the anode, the cathode and the fuse link; and a cap dielectric between the top surface of the fuse link and the interlayer insulating layer, and the cap dielectric contains a different An insulating material for an interlayer insulating layer, wherein the fuse link includes a first region in contact with the dummy metal plug and a second region in contact with the cap dielectric.

The first electrical driving force caused by electromigration at the first region of the fuse link may be less than the second electrical driving force caused by electromigration at the second region of the fuse link. The temperature of the fuse link may have a maximum at the second zone during the supply of the programmed current to the fuse link.

In accordance with another embodiment, an electrical fuse structure of a semiconductor component includes: a fuse link of a first metal material connecting a cathode and an anode; a cap dielectric covering a top surface of the fuse link; and a dielectric through the cover A dummy metal plug that is in contact with the fuse link, wherein the fuse link will carry a programmed current, and wherein the dummy metal plug will change the temperature gradient in the fuse link when the fuse chain carries the programmed current.

The dummy metal plug may include a barrier metal layer between the metal layer and the fuse link, and the barrier metal layer may include a second metal material different from the first metal material. The fuse link may include a first region in contact with the dummy metal plug and a second region in contact with the cap dielectric, and the temperature of the fuse link may be at the second region when the fuse chain carries the stylized current Has the maximum value. The fuse link can have an anode and a The gap between the dummy metal plugs. The distance between the void and the dummy metal plug may be less than the distance between the void and the anode.

10‧‧‧Under layer

20‧‧‧metal layer

20a‧‧‧Anode

20c‧‧‧ cathode

20d‧‧‧Fuse fuse chain

20f‧‧‧fuse chain

30‧‧‧ Cover dielectric

40‧‧‧Interlayer insulation

50‧‧‧Virtual metal plug

50a‧‧‧First dummy metal plug

50b‧‧‧second dummy metal plug

51‧‧‧Baffle metal layer

53‧‧‧metal layer

53a‧‧‧Contact section

53b‧‧‧Interconnect

60a‧‧‧first contact plug

60b‧‧‧second contact plug

65a‧‧‧first connection pattern

65b‧‧‧Second connection pattern

70‧‧‧Second interlayer insulation

71‧‧‧through hole

73‧‧‧ trench

80‧‧‧Dummy metal pattern

80a‧‧‧First dummy metal pattern

80b‧‧‧second dummy metal pattern

81‧‧‧Second barrier metal layer

83‧‧‧Second metal layer

90a‧‧‧First conductive pattern

90b‧‧‧Second conductive pattern

100‧‧‧Under layer

110‧‧‧Anode pattern

110a‧‧‧Anode pattern

110b‧‧‧ cathode pattern

120‧‧‧First interlayer insulation

125‧‧‧First contact plug

125a‧‧‧first contact plug

125b‧‧‧second contact plug

130‧‧‧Fuse chain

135‧‧‧ Cover dielectric

140‧‧‧Second interlayer insulation

150‧‧‧Virtual metal plug

151‧‧‧ barrier metal layer

153‧‧‧metal layer

155‧‧‧Second contact plug

160‧‧‧Cathode pattern

200‧‧‧Under layer

210‧‧‧ cathode pattern

210a‧‧‧Part 1

210b‧‧‧Part II

215‧‧‧First contact plug

220‧‧‧Fuse chain

220d‧‧‧Fuse fuse chain

225‧‧‧Second contact plug

230‧‧‧Anode pattern

230a‧‧‧Part I

230b‧‧‧Part II

235‧‧‧Virtual metal plug

240‧‧‧Dummy metal pattern

300‧‧‧Semiconductor substrate

301‧‧‧ Component isolation layer

310‧‧‧First interlayer insulation

310f‧‧‧Fuse chain

310g‧‧‧ gate electrode

315‧‧‧ Cover dielectric

320‧‧‧First interlayer insulation

321‧‧‧cell contact plug

321a‧‧‧first contact plug

321b‧‧‧second contact plug

321d‧‧‧Virtual metal plug

325‧‧‧First interconnect

325a‧‧‧First conductive pattern

325b‧‧‧Second conductive pattern

325d‧‧‧dummy metal pattern

325f‧‧‧fuse chain

327‧‧‧ Cover dielectric

330‧‧‧Second interlayer insulation

331a‧‧‧first contact plug

331b‧‧‧second contact plug

331d‧‧‧Virtual metal plug

335‧‧‧Second interconnect

335a‧‧‧First conductive pattern

335b‧‧‧Second conductive pattern

335d‧‧‧dummy metal pattern

340‧‧‧3rd interlayer insulation

345‧‧‧ third interconnect

345f‧‧‧fuse chain

347‧‧‧ Cover dielectric

351a‧‧‧first contact plug

351b‧‧‧second contact plug

351d‧‧‧Virtual metal plug

353a‧‧‧First conductive pattern

353b‧‧‧Second conductive pattern

353d‧‧‧Dummy metal pattern

1100‧‧‧ memory system

1110‧‧‧ Controller

1120‧‧‧Input/output components

1130‧‧‧ memory

1140‧‧ interface

1150‧‧ ‧ busbar

1200‧‧‧ memory card

1210‧‧‧Semiconductor memory components

1220‧‧‧ memory controller

1221‧‧‧Static Random Access Memory (SRAM)

1222‧‧‧Processing unit

1223‧‧‧Host interface

1224‧‧‧Error correction block

1225‧‧‧ memory interface

1300‧‧‧Information Processing System

1310‧‧‧Memory System

1311‧‧‧Semiconductor components

1312‧‧‧ memory controller

1320‧‧‧Data machine

1330‧‧‧Central Processing Unit (CPU)

1340‧‧‧RAM

1350‧‧‧User interface

1360‧‧‧System Bus

A‧‧‧ curve

AP‧‧‧Anode

B‧‧‧ Curve

C‧‧‧ Curve

CP‧‧‧ cathode

D‧‧‧ interval

D‧‧‧ Location in the fuse link FL

EM‧‧‧Electric migration

EM1‧‧‧First electric driving force

EM2‧‧‧second electric driving force

F _EM ‧‧‧Electric driving force

FL‧‧‧Fuse Chain

R1‧‧‧ first district

R2‧‧‧Second District

R3‧‧‧ Third District

T1‧‧‧ thickness

T2‧‧‧first thickness

T3‧‧‧second thickness

TM1‧‧‧First Thermal Migration

TM2‧‧‧Second Thermal Migration

V‧‧‧ gap

W1‧‧‧Width/Upper Width

W2‧‧‧Width / first lower width

W3‧‧‧Width

△F _TM ‧‧‧The difference between the thermal driving forces

△F _EM ‧‧‧The difference in electric driving force

Features of the skilled artisan will become apparent to those skilled in the art from a <RTIgt; </RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

Figure 2 illustrates thermal migration in a stylized program of one embodiment of an electrical fuse structure.

Figure 3 illustrates thermal migration and electromigration in a stylized program of one embodiment of an electrical fuse structure.

4A illustrates a first embodiment of an electrical fuse structure, and FIG. 4B illustrates a view taken along section lines II' and II-II' of FIG. 4A.

Figure 5 illustrates electromigration in a stylized program of a first embodiment of an electrical fuse structure.

Figure 6 illustrates thermal migration in a stylized program of a first embodiment of an electrical fuse structure.

Figure 7 illustrates thermal migration and electromigration in a stylized program of a first embodiment of an electrical fuse structure.

8A to 8C illustrate a modified cross-sectional view of a first embodiment of an electric fuse structure.

9A and 10A illustrate a second embodiment of an electrical fuse structure, and FIGS. 9B and 10B illustrate views taken along section lines I-I' and II-II' of FIGS. 9A and 10A, respectively. Figures, and Figures 9C and 10C illustrate a modification of the second embodiment of the electrical fuse structure.

11A and 12A illustrate thermal migration in a stylized program of a second embodiment of an electrical fuse structure, and FIGS. 11B and 12B illustrate thermal migration and power in a programmatic program of a second embodiment of an electrical fuse structure. migrate.

13A and 14A illustrate a third embodiment of the electric fuse structure, and Figs. 13B and 14B respectively illustrate views taken along section lines I-I' and II-II' in Figs. 13A and 14A.

Fig. 15A illustrates a fourth embodiment of the electric fuse structure, and Fig. 15B illustrates a view taken along section lines I-I' and II-II' in Fig. 15A.

Fig. 16A illustrates a fifth embodiment of the electric fuse structure, and Fig. 16B illustrates a view taken along section lines I-I' and II-II' in Fig. 16A.

Fig. 17A illustrates a sixth embodiment of the electric fuse structure, and Fig. 17B illustrates a view taken along section lines I-I' and II-II' in Fig. 17A.

Fig. 18A illustrates a seventh embodiment of the electric fuse structure, and Fig. 18B illustrates a view taken along section lines I-I' and II-II' in Fig. 18A.

Figure 19 illustrates a modification of the seventh embodiment of the electrical fuse structure.

20A, 20B, 21A and 21B illustrate a modification of the seventh embodiment of the electric fuse structure.

22 and 23 illustrate an eighth embodiment of an electrical fuse structure.

24A and 24B illustrate a ninth embodiment of an electrical fuse structure.

25A-25C illustrate an embodiment of a semiconductor component, each of which includes an electrical fuse structure in accordance with one or more of the foregoing embodiments.

Figure 26 illustrates a memory system incorporating a semiconductor component in accordance with one or more of the foregoing embodiments.

Figure 27 illustrates a memory card incorporating a semiconductor component in accordance with one or more of the foregoing embodiments.

Figure 28 illustrates an information processing system including semiconductor components in accordance with one or more of the foregoing embodiments.

The example embodiments are described more fully hereinafter with reference to the accompanying drawings; however, the example embodiments may be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and the exemplary embodiments will be fully conveyed to those skilled in the art.

In the drawings, the dimensions of layers and regions may be exaggerated for clarity. It will also be understood that when a layer or device is referred to as "on another layer or substrate", the layer or device can be directly on the other layer or substrate, or an intervening layer can also be present. In addition, it should be understood that when a layer is referred to as being "under" another layer, the layer may be directly under the other layer, and one or more intervening layers may also be present. In addition, it should also be understood that when a layer is referred to as being "between" two layers, the layer can be a single layer between the two layers, or one or more intervening layers can also be present. The same reference numbers always refer to the same device.

Also, it will be understood that when a device is referred to as "connected" or "coupled" to another device, the device can be directly connected or coupled to another device, or an intervening device can be present. In contrast, when a device is referred to as being "directly connected" or "directly coupled" to another device, there are no intervening devices. The same number always indicates the same device. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. Other words used to describe the relationship between devices or layers should be interpreted in a similar manner (for example, "between" and "directly in" "Between" and "proximity" are relative to "directly adjacent", "on" and "directly on").

Also, it will be understood that when a device is referred to as "connected" or "coupled" to another device, the device can be directly connected or coupled to another device, or an intervening device can be present. In contrast, when a device is referred to as being "directly connected" or "directly coupled" to another device, there are no intervening devices. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. Other words used to describe the relationship between devices or layers should be interpreted in a similar manner (for example, "between" and "directly between" and "adjacent" Relative to "direct proximity", "on" versus "directly on").

Example embodiments of the inventive concepts are described herein with reference to the cross-section illustrations, which are illustrative of the preferred embodiments (and intermediate structures) of the example embodiments. Accordingly, variations from the shapes of the descriptions as a result of, for example, manufacturing techniques and/or tolerances are contemplated. Thus, example embodiments of the inventive concepts should not be construed as being limited to the specific shapes of the regions illustrated herein. For example, an implanted region illustrated as a rectangle may have rounded or curved features and/or an implant concentration gradient at the edge of the implanted region rather than a binary change from the implanted region to the non-implanted region. . Likewise, a buried region formed by implantation can result in some implantation in the region between the buried region and the surface from which the implantation takes place. The area illustrated in the figures is therefore illustrative in nature and is not intended to limit the scope of the embodiments.

As understood by the entities of the present invention, elements in accordance with various embodiments described herein and methods of forming the elements can be embodied in a miniature electronic component, such as an integrated circuit, in accordance with various embodiments described herein. Component integration In a miniature electronic component. Thus, the cross-sectional views described herein can be replicated in two different directions in a miniature electronic component that do not need to be orthogonal. Accordingly, a plan view of a miniature electronic component embodying elements in accordance with various embodiments described herein can comprise a plurality of elements in an array and/or a two-dimensional pattern, the array and/or two-dimensional pattern being based on microelectronic elements Feature.

Depending on the functionality of the miniature electronic components, elements in accordance with various embodiments described herein may be inter-distributed between other components. Moreover, miniature electronic components in accordance with various embodiments described herein can be replicated in a third direction that can be orthogonal to the two different directions to provide a three-dimensional integrated circuit.

Accordingly, the cross-sectional views illustrated herein provide support for a plurality of elements in accordance with various embodiments described herein, in a plan view along two different directions and/or in a perspective view. Extend in three different directions. For example, when a single active region is illustrated in a cross-sectional view of a component/structure, the component/structure may comprise a plurality of active regions and a transistor structure thereon (or a memory cell structure when appropriate for the condition, Gate structure, etc., as illustrated by the plan view of the component/structure.

Figure 1 illustrates the electromigration effects in a stylized program of one embodiment of an electrical fuse structure. Figure 2 illustrates a diagram illustrating the thermal transfer effects in a stylized program of one embodiment of an electrical fuse structure.

Referring to Figures 1 and 2, the electrical fuse structure includes a fuse link FL connecting the cathode CP to the anode AP. The procedure for stylizing the electrical fuse structure can include forming a voltage difference between the cathode CP and the anode AP to provide a programmed current to the fuse link FL.

For example, during the stylization procedure of the electrical fuse structure, a negative voltage can be applied to the cathode CP and a positive voltage can be applied to the anode AP. Therefore, electrons flow from the cathode CP toward the anode AP through the fuse link FL. As electrons flow through the fuse link FL, electrons can collide with atoms of the fuse link FL, resulting in a phenomenon called electromigration EM. As shown in FIG. 1, the driving force (eg, electric driving force F _EM ) caused by electromigration may be completely constant regardless of the position in the fuse link FL.

When the stylized current is supplied to the fuse link FL formed of a metallic material (for example, tungsten, aluminum, and copper), the temperature of the fuse link FL can be increased by Joule heating. As shown in Figure 2, Joule heating can produce a non-uniform temperature distribution of the fuse link FL. For example, the temperature of the fuse link FL can be highest at the central portion. This non-uniform temperature distribution can cause thermal migration of the fuse link FL. For example, atoms of the fuse link FL may migrate from the central portion toward the anode AP (hereinafter referred to as first thermal migration TM1) or toward the cathode CP (hereinafter referred to as second thermal migration TM2).

Figure 3 illustrates the thermal migration and electromigration effects in a stylized program of an embodiment of an electrical fuse structure. In Fig. 3, a curve A shows an example of a driving force caused by electromigration, which can occur when the electric fuse structure is programmed. Curve B represents the driving force caused by thermal migration, which can occur when the electrical fuse structure is programmed. Curve C presents the total driving force or resultant force of the two driving forces caused by thermal and electromigration.

Referring to FIG. 3, the driving force (for example, the electric driving force F _EM ) caused by electromigration can be constant regardless of the portion in the fuse link FL. In contrast, the driving force (for example, the thermal driving force F _TM ) caused by the non-uniform temperature distribution can be applied in the opposite direction from the central portion of the fuse link FL.

Between the anode AP and the central portion of the fuse link FL, the electromigration EM and the first thermal migration TM1 may occur in the same direction. As a result, the total driving force F _EM+TM applied to the fuse link FL can be based on the sum of the electric driving force and the thermal driving force. In contrast, electromigration EM and second thermal migration TM2 can occur in opposite directions between the cathode CP and the central portion of the fuse link FL. As a result, the total driving force F _EM+TM applied to the fuse link FL can be based on the difference between the thermal driving force and the electric driving force.

In the fuse link FL, thermal and electrical driving forces may thus result in a non-uniform atomic flow rate or a non-zero flux divergence, as shown in FIG. In addition, depletion or accumulation of atoms may occur depending on the magnitude of the flux divergence. For example, if the outflow flux is greater than the inflow flux in a particular region of the fuse link FL, the atoms can be depleted to form a void. In contrast, if the influx flux is greater than the outflow flux in a particular region of the fuse link FL, the atoms can be accumulated to establish a hillock formation. The voids increase the resistance of the fuse link FL, thereby stylizing the electrical fuse structure.

According to the above method, the larger the flux divergence in the fuse link FL, the faster the void is formed. Hereinafter, various structures and methods for increasing flux divergence in the fuse link FL will be described.

4A illustrates a first embodiment of an electrical fuse structure, and FIG. 4B illustrates a view taken along section lines II' and II-II' of FIG. 4A. Referring to Figures 4A and 4B, a first embodiment of an electrical fuse structure includes a metal layer 20 on the underlying layer 10, a cap dielectric 30 overlying the top surface of the metal layer 20, and a cap dielectric 30. Interlayer insulating layer 40. The metal layer 20 may form a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a. Additionally, the electrical fuse structure can include a dummy metal plug 50 that is in contact with a portion of the fuse link 20f.

The underlying layer 10 can be an insulating film. For example, the underlying layer 10 can be one of: an element isolation layer that can be formed on a semiconductor substrate to define an active region, or an interlayer insulating layer 40 formed on the transistor to support the metal line .

Metal layer 20 can be a thin film. In one embodiment, the metal layer 20 can be The first metal material is formed. For example, the metal layer 20 can be made of at least one of tungsten (W), aluminum (Al), copper (Cu), or a copper alloy. Examples of the copper alloy include a copper-based material in which C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt are contained in a small amount or a predetermined amount. At least one of Mg, Al or Zr.

The anode 20a, the cathode 20c, and the fuse link 20f can be formed by depositing the metal layer 20 on the underlying layer 10 and patterning the metal layer 20. Alternatively, the anode 20a, the cathode 20c, and the fuse link 20f may be formed by a damascene process including forming a trench in the insulating layer and filling the trench with a metallic material. In one embodiment, the fuse link 20f may extend in a particular direction, the anode 20a may be coupled to an end portion of the fuse link 20f, and the cathode 20c may be coupled to an opposite end portion of the fuse link 20f. The anode 20a and the cathode 20c may have a width greater than the width of the fuse link 20f. As shown in the figures, the anode 20a and the cathode 20c can be formed symmetrically. However, in an alternative embodiment, anode 20a and cathode 20c may be formed asymmetrically.

In one embodiment, the fuse link 20f can include a first zone R1, a second zone R2, and a third zone R3. In the first region R1, the dummy metal plug 50 and the fuse link 20f are in contact with each other. In the second region R2, the cap dielectric 30 and the fuse link 20f are in contact with each other between the anode 20a and the dummy metal plug 50. In the third region R3, the cap dielectric 30 and the fuse link 20f are in contact with each other between the cathode 20c and the dummy metal plug 50.

The cap dielectric 30 can be between the interlayer insulating layer 40 and the top surface of the fuse link 20f. The cap dielectric 30 may be formed of an insulating material different from the underlying layer 10 and the interlayer insulating layer 40. The cap dielectric layer 30 may also conformally cover the top surface of the fuse link 20f, for example, in a uniform thickness, although this is not necessary in all embodiments. The cap dielectric 30 can be formed of, for example, SiO ₂ , SiON, Si ₃ N ₄ , SiCN, SiC, or SiCN. The interlayer insulating layer 40 may be formed of tantalum oxide, tantalum nitride, hafnium oxynitride or a low-k material.

The dummy metal plug 50 can be formed by a process including forming a dummy contact hole to expose a portion of the fuse link 20f through the cap dielectric 30 and the interlayer insulating layer 40, and then filling the dummy contact with a metallic material hole. In one embodiment, the dummy metal plug 50 may be formed on a central portion of the fuse link 20f and may be in contact with the top surface of the fuse link 20f. The lower width of the dummy metal plug 50 may be greater than the upper width of the fuse link 20f, and the upper width of the dummy metal plug 50 may be greater than the lower width of the dummy metal plug 50.

In one embodiment, the dummy metal plug 50 may include a metal layer 53 and a barrier metal layer 51 interposed between the metal layer 53 and the fuse link 20f. A barrier metal layer 51 may be provided to cover the bottom and side surfaces of the metal layer 53. In one embodiment, the barrier metal layer 51 may have a uniform thickness on the side and bottom surfaces of the metal layer 53. The barrier metal layer 51 may be formed of a material capable of preventing the metal material constituting the metal layer 53 from diffusing into the interlayer insulating layer 40 adjacent thereto.

In one embodiment, the barrier metal layer 51 may be formed of a second metal material that may be different from the first metal material of the fuse link 20f and that has a conductivity that is less than the conductivity of the first metal material. . Examples of the material forming the barrier metal layer 51 include at least one of Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN, or a combination thereof.

In one embodiment, the metal layer 53 may be formed of a third metal material that may be different from the second metal material of the barrier metal layer 51. The third metal material of the metal layer 53 may be the same as or different from the first metal material of the fuse link 20f. For example, the metal layer 53 may be made of at least one of: tungsten (W), Aluminum (Al), copper (Cu) or copper alloy. Examples of the copper alloy include a copper-based material in which C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt are contained in a small amount or a predetermined amount. At least one of Mg, Al or Zr.

Figure 5 illustrates the electromigration that can occur in the stylized program of the first embodiment of the electrical fuse structure. Figure 6 illustrates the thermal transfer that can occur in the stylized program of the first embodiment of the electrical fuse structure. Figure 7 illustrates the heat and electromigration that can occur in the stylized procedure of the first embodiment of the electrical fuse structure.

Referring to Figure 5, the stylized program of the electrical fuse structure can be implemented using a programmed current. The stylized current can be generated by forming a voltage difference between the cathode 20c and the anode 20a. In one embodiment, during the stylization process, a negative voltage may be applied to the cathode 20c, a positive voltage may be applied to the anode 20a, and the dummy metal plug 50 may be in an electrically floating state. The voltage difference between the cathode 20c and the anode 20a produces a stylized current that causes electrons to flow from the cathode 20c through the fuse link 20f toward the anode 20a.

During this electron flow, electrons can collide with atoms constituting the fuse link 20f, thereby causing electromigration. Electromigration can occur primarily along the surface of the metal layer. The driving force caused by electromigration may vary depending on the material in contact with the fuse link 20f. In other words, as described above, the fuse link 20f may include the following: a first region R1 in which the dummy metal plug 50 and the fuse link 20f are in contact with each other; and a second region R2 in which the cap dielectric 30 is melted The wire chain 20f is in contact with each other between the anode 20a and the dummy metal plug 50; and the third region R3 in which the cap dielectric 30 and the fuse link 20f are in contact with each other between the cathode 20c and the dummy metal plug 50.

The driving force caused by electromigration may be different between the first region R1 and the second region R2 and between the first region R1 and the third region R3. For example, metal layers and dielectrics The first electric driving force EM1 on the second region R2 and the third region R3 where the physical layers are in contact with each other may be smaller than the second electric driving force EM2 on the first region R1, and at the first region R1, different metallic materials are mutually contact.

Referring to Figure 6, Joule heat can occur when the electrical fuse structure is programmed. Joule heat can produce a non-zero gradient of the temperature of the fuse link 20f. In one embodiment, a maximum amount of Joule heat may be generated at a central portion of the fuse link 20f. However, the temperature of the first zone R1 can be lowered because a considerable portion of this heat can be dissipated via the portion where the dummy metal plug 50 and the fuse link 20f are in contact with each other. For example, physical contact between the dummy metal plug 50 and the fuse link 20f can result in a change in the temperature gradient of the fuse link 20f. For example, during stylization, the temperature of the fuse link 20f may have a maximum at the two separate portions due to the presence of the dummy metal plug 50. For example, the temperature of the fuse link 20f may be a maximum in the second region R2 and the third region R3, and the second region R2 and the third region R3 are located at respective sides of the dummy metal plug 50.

In Figure 7, curve A shows the driving force caused by electromigration, which can occur when the electrical fuse structure is programmed. Curve B shows the driving force caused by thermal migration that can occur when the electrical fuse structure is programmed. Curve C shows the total driving force or resultant force of the two driving forces caused by heat and electromigration.

In one embodiment, the temperature of the fuse link 20f may have a maximum at the two separated portions because of the presence of the dummy metal plug 50. As a result, the portion of the fuse link 20f below the dummy metal plug 50 may have a temperature lower than the temperature of other portions of the fuse link 20f. In addition, due to the presence of the dummy metal plug 50, the electric driving force of the fuse link 20f in the portion below the dummy metal plug 50 can be lowered.

The total driving force can be drastically changed in or near the first region R1 of the fuse link 20f. For example, the rate of change of the total driving force F _EM+TM in the electrical fuse structure having the dummy metal plug 50 can be greater than in the electrical fuse structure described with reference to FIG. For example, because the flux divergence increases at the first region R1 that is in contact with the dummy metal plug 50, the electrical fuse structure can be programmed more quickly under the same conditions (eg, at the same voltage). This situation makes it possible to program the electrical fuse structure with a reduced stylized voltage.

As shown in FIG. 7, the total driving force F _EM+TM may have a maximum value at a portion of the fuse link 20f adjacent to the anode 20a and on one side of the dummy metal plug 50. Since the outflow flux increases sharply, depletion or voids may occur at the second region R2 of the fuse link 20f adjacent to the dummy metal plug 50. Thus, after the stylization process, the electrical fuse structure can have a gap V between the anode 20a and the dummy metal plug 50. The distance between the void V and the dummy metal plug 50 may be smaller than the distance between the void V and the anode 20a.

8A to 8C illustrate a modification of the first embodiment of the electric fuse structure. Referring to Figures 8A-8C, as described with reference to Figure 4B, the electrical fuse structure includes a cathode 20c, an anode 20a, a fuse link 20f, and a dummy metal plug 50. The fuse link 20f includes the following: a first region R1 in which the dummy metal plug 50 and the fuse link 20f are in contact with each other; and a second region R2 in which the cap dielectric 30 and the fuse link 20f are in the anode 20a and dummy The metal plugs 50 are in contact with each other; and the third region R3 in which the cap dielectric 30 and the fuse link 20f are in contact with each other between the cathode 20c and the dummy metal plug 50.

Referring to FIGS. 8A through 8C, the dummy metal plug 50 may include the barrier metal layer 51 and the metal layer 53 as described above, and may have a bottom surface lower than the top surface of the fuse link 20f. The bottom surface of the dummy metal plug 50 may be spaced apart from the top surface of the underlying layer 10. In other words, the thickness of the fuse link 20f may be smaller in the first region R1 than in the second region R2 and the third region R3. In addition, as shown in Figures 8A and 8B As shown, the dummy metal plug 50 can have a lower width that is lower than the width of the upper portion of the fuse link 20f. In one embodiment, as shown in FIG. 8B, the thickness of the barrier metal layer 51 on the bottom surface of the metal layer 53 may be greater than the thickness of the barrier metal layer 51 on the side surface of the metal layer 53.

In one embodiment, as shown in Figure 8C, the dummy metal plug 50 can have a rounded lower corner. Also, the width of the lower portion of the dummy metal plug 50 may be greater than the upper width of the fuse link 20f. Therefore, the dummy metal plug 50 may cover the top surface of the fuse link 20f and a portion of the side surface. In other words, the barrier metal layer 51 can be in direct contact with the top surface and the side surface of the fuse link 20f.

9A and FIG. 10A illustrate a second embodiment of the electric fuse structure, and FIGS. 9B and 10B illustrate views taken along section lines I-I' and II-II' of FIGS. 9A and 10A, respectively, and FIG. 9C. And Figure 10C illustrates a modification of the second embodiment of the electrical fuse structure.

In the second embodiment, the electrical fuse structure includes at least one layer of the dummy metal plug 50 and a dummy metal pattern 80 connected to the fuse link 20f. The volume of the dummy metal pattern 80 can be adjusted to control the melting efficiency of the electrical fuse structure.

Referring to FIGS. 9A, 9B, 10A and 10B, a second embodiment of the electrical fuse structure includes a metal layer 20 on the underlying layer 10, a capping dielectric 30 covering the top surface of the metal layer 20, and The interlayer insulating layer 40 on the dielectric 30 is covered. The metal layer 20 may form a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a. Additionally, the electrical fuse structure can include a dummy metal plug 50, and a dummy metal pattern 80 that is coupled to a portion of the fuse link 20f. The first contact plug 60a and the first conductive pattern 90a may be connected to the anode 20a. The second contact plug 60b and the second conductive pattern 90b may be connected to the cathode 20c.

In one embodiment, the fuse link 20f can extend in a particular direction, The pole 20a can be connected to the end portion of the fuse link 20f, and the cathode 20c can be connected to the opposite end portion of the fuse link 20f. The anode 20a and the cathode 20c may have a width greater than the width of the fuse link 20f. In one embodiment, the metal layer 20 can be formed from a first metallic material. For example, the metal layer 20 can be made of at least one of tungsten (W), aluminum (Al), copper (Cu), or a copper alloy. Examples of the copper alloy include a copper-based material in which C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt are contained in a small amount or a predetermined amount. At least one of Mg, Al or Zr.

The cap dielectric 30 and the first interlayer insulating layer 40 may be sequentially formed on the underlying layer 10, and on the underlying layer 10, an anode 20a, a cathode 20c, and a fuse link 20f are provided. The cap dielectric 30 may be formed of an insulating material different from the underlying layer 10 and the first interlayer insulating layer 40. The cap dielectric may conformally cover the top surface of the fuse link 20f and may be formed of, for example, SiO ₂ , SiON, Si ₃ N ₄ , SiCN, SiC, or SiCN.

The formation of the dummy metal plug 50 may include forming a dummy contact hole penetrating the cap dielectric 30 and the first interlayer insulating layer 40, and exposing a portion of the fuse link 20f. Next, the dummy contact holes may be filled with a metallic material. Forming the first contact plug 60a may include: forming a first contact hole penetrating the cap dielectric 30 and the first interlayer insulating layer 40 and exposing a portion of the anode 20a, and then filling the first contact hole with a metallic material .

Forming the second contact plug 60a may include: forming a second contact hole penetrating the cap dielectric 70 and the first interlayer insulating layer 40 and exposing a portion of the cathode 20c, and then filling the second contact hole with a metallic material . In one embodiment, the dummy metal plug 50 can be formed simultaneously with the first contact plug 60a and the second contact plug 60b. another In addition, the dummy metal plug 50 may include the same metallic material as at least one of the first contact plug 60a and the second contact plug 60b.

In one embodiment, the dummy metal plug 50 and each of the first metal contact plug 60a and the second metal contact plug 60b may include a first barrier metal layer 51 and a first metal layer 53. The first barrier metal layer 51 may be formed to have a uniform thickness on the side surface and the bottom surface of the dummy contact hole. In one embodiment, the first barrier metal layer 51 may be formed of a second metal material, the second metal material may be different from the first metal material of the fuse link 20f, and the first barrier metal layer 51 may have less than the first The conductivity of the electrical conductivity of a metallic material. For example, the first barrier metal layer 51 may be formed of Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN, or a combination thereof.

The first metal layer 53 may be formed of a third metal material that may be different from the second metal material of the first barrier metal layer 51. The third metal material of the first metal layer 53 may be the same as or different from the first metal material of the fuse link 20f. For example, the first metal layer 53 may be made of at least one of tungsten (W), aluminum (Al), copper (Cu), or a copper alloy. Examples of the copper alloy include a copper-based material in which C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt are contained in a small amount or a predetermined amount. At least one of Mg, Al or Zr.

The second interlayer insulating layer 70 may be formed on the first interlayer insulating layer 40 including the dummy metal plug 50 and the first contact plug 60a and the second contact plug 60b. The first conductive pattern 90a and the second conductive pattern 90b and the dummy metal pattern 80 may be formed in the second interlayer insulating layer 70. The dummy metal pattern 80 can be connected to the dummy metal plug 50. The first conductive pattern 90a and the second conductive pattern 90b may be connected to the first contact plug 60a and the second contact plug 60b, respectively.

The dummy metal pattern 80 may include a second metal layer 83 and a second barrier metal layer 81 interposed between the second metal layer 83 and the dummy metal plug 50. Forming the dummy metal pattern 80 may include: forming a trench in the second interlayer insulating layer 70 to expose a top surface of the dummy metal plug 50, and then sequentially forming a second barrier metal layer 81 and a second metal layer 83 to fill the trench groove. The second barrier metal layer 81 may be formed of, for example, Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN, or a combination thereof.

The second metal layer 83 may be formed of a metal material different from the metal material constituting the first metal layer 51 of the dummy metal plug 50. The first conductive pattern 90a and the second conductive pattern 90b may be formed simultaneously with the dummy metal pattern 80. For example, the first conductive pattern 90a and the second conductive pattern 90b may be formed of the same metal material as the dummy metal pattern 80.

According to the embodiment of FIGS. 9A and 9B, the width W2 of the dummy metal plug 50 may be smaller than the width W1 of the fuse link 20f. The width W3 of the dummy metal pattern 80 may be greater than the width W1 of the fuse link 20f. Further, the dummy metal pattern 80 may have a first thickness t2 that is smaller than the thickness t1 of the fuse link 20f.

According to the embodiment of FIGS. 10A and 10B, the width W2 of the dummy metal plug 50 may be smaller than the width W1 of the fuse link 20f. The width W3 of the dummy metal pattern 80 may be greater than the width W1 of the fuse link 20f. Further, the dummy metal pattern 80 may have a second thickness t3 that is greater than the thickness t1 of the fuse link 20f.

According to the second embodiment, the dummy metal pattern 80 in FIGS. 9A and 9B may have a volume different from the volume of the dummy metal pattern 80 in FIGS. 10A and 10B. For example, the volume of the dummy metal pattern 80 in FIGS. 9A and 9B may be smaller than the volume of the dummy metal pattern 80 in FIGS. 10A and 10B.

According to the embodiment of Figures 9C and 10C, the electrical fuse structure can be included in The metal layer 20 on the underlying layer 10, the cap dielectric 30 covering the top surface of the metal layer 20, and the first interlayer insulating layer 40 and the second interlayer insulating layer 70 on the cap dielectric 30. The metal layer 20 may form a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a. In one embodiment, anode 20a and cathode 20c may have a width greater than the width of fuse link 20f. The metal layer 20 may be formed of, for example, a first metal material such as at least one of tungsten (W), aluminum (Al), copper (Cu), or a copper alloy. Examples of the copper alloy include a copper-based material in which C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt are contained in a small amount or a predetermined amount. At least one of Mg, Al or Zr.

According to this embodiment, the electrical fuse structure can include a dummy metal plug 50 that is in partial contact with one of the dummy fuse links 20f. The dummy metal plug 50 may include a barrier metal layer 51, a contact portion 53a, and an interconnection portion 53b. The barrier metal layer 51 may be formed of a conductive material capable of preventing the metal material constituting the contact portion 53a and the interconnection portion 53b from diffusing into the adjacent first interlayer insulating layer 40 and second interlayer insulating layer 70. The barrier metal layer 51 may be formed of a second metal material different from the first metal material and having a conductivity lower than that of the first metal material. For example, the barrier metal layer 51 may be formed of Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN, or a combination thereof.

In one embodiment, the contact portion 53a may be connected to the fuse link 20f through the first interlayer insulating layer 40. The interconnection portion 53b may be disposed in the second interlayer insulating layer 70 and may be connected to the contact portion 53a. The interconnecting portion 53b may have a width greater than the width of the contact portion 53a. The contact portion 53a and the interconnection portion 53b may be formed of a third metal material, which may be different from the second metal material. For example, the contact portion 53a and the interconnection portion 53b may be made of tungsten (W), aluminum (Al), copper (Cu), or a copper alloy. Examples of copper alloys include copper-based materials in which the copper-based materials are At least one of C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al or Zr is contained in a small amount or in a predetermined amount.

In one embodiment, shown in FIG. 9C, the width W2 of the lower portion of the dummy metal plug 50 may be less than the width W1 of the fuse link 20f. The width W3 of the upper portion of the dummy metal plug 50 may be greater than the width W1 of the fuse link 20f. Further, in the dummy metal plug 50, the interconnection portion 53b may have a first thickness t2 smaller than the thickness t1 of the fuse link 20f.

Alternatively, as shown in FIG. 10C, the lower width W2 of the dummy metal plug 50 may be smaller than the width W1 of the fuse link 20f. The width W3 of the upper portion of the dummy metal plug 50 may be greater than the width W1 of the fuse link 20f. Also, the interconnection portion 53b of the dummy metal plug 50 may have a second thickness t3 larger than the thickness t1 of the fuse link 20f. For example, the volume of the interconnect portion 53b of the dummy metal plug 50 in FIG. 9C may be smaller than the interconnect portion 53b of the dummy metal plug 50 in FIG. 10C.

Forming the dummy metal plug 50 may include: sequentially forming the first interlayer insulating layer 40 and the second interlayer insulating layer 70, forming through holes through the first interlayer insulating layer 40 and the second interlayer insulating layer 70, and patterning The two interlayer insulating layer 70 forms a trench connected to the via hole, and sequentially forms a barrier metal layer and a metal layer in the via hole and the trench. In one embodiment, the first connection pattern 65a and the second connection pattern 65b may be formed during formation of the dummy metal plug 50. The first connection pattern 65a may be connected to the anode 20a, and the second connection pattern 65b may be connected to the cathode 20c.

Similar to the dummy metal plug 50, each of the first connection pattern 65a and the second connection pattern 65b may include a via portion, an interconnect portion, and a barrier metal layer covering the bottom surface and the side surface thereof.

11A and 12A illustrate the process of the second embodiment of the electrical fuse structure How the thermal migration in the programming procedure depends on the example of the volume of the dummy metal pattern.

According to the second embodiment, during the stylization procedure, a negative voltage can be applied to the cathode 20c, a positive voltage can be applied to the anode 20a, and the dummy metal plug 50 can be in an electrically floating state. Because of the voltage difference between the cathode 20c and the anode 20a and the accompanying stylized current, electrons flow from the cathode 20c toward the anode 20a through the fuse link 20f.

According to the second embodiment, as shown in FIGS. 11A and 12A, during the stylization, the temperature gradient of the fuse link 20f can be controlled by adjusting the volume of the dummy metal plug 50. In FIG. 11A, the interconnection portion 53b of the dummy metal plug 50 may have a first thickness t2 that is smaller than the thickness t1 of the fuse link 20f. In FIG. 12A, the interconnection portion 53b of the dummy metal plug 50 may have a second thickness t3 larger than the thickness t1 of the fuse link 20f. For example, the volume of the interconnect portion 53b of the dummy metal plug 50 in FIG. 12A may be larger than the interconnect portion 53b of the dummy metal plug 50 shown in FIG. 11A.

As the volume of the dummy metal plug 50 increases, the first region R1 of the fuse link 20f can be cooled more efficiently. For example, the temperature of the first region R1 of the fuse link 20f can be more effectively reduced as compared to the adjacent region. In comparison with the electric fuse structure in Fig. 11A, the temperature decrease of the first region R1 in the electric fuse structure of Fig. 12A can be large. As a result, the non-uniformity of the temperature distribution of the fuse link 20f in the electric fuse structure of Fig. 12A can be higher than that of the electric fuse structure of Fig. 11A.

11B and 12B illustrate the thermal migration and electromigration effects in the stylized program of the second embodiment of the electrical fuse structure. In FIGS. 11B and 12B, a curve A indicates a driving force caused by electromigration, which may occur when the electric fuse structure is programmed. Curve B represents the driving force caused by thermal migration, which can occur when the electrical fuse structure is programmed. In FIGS. 11B and 12B, a curve C indicates the total driving force or resultant force of the two driving forces caused by heat and electromigration.

Referring to Fig. 11B, in the first region R1 of the fuse link 20f, the difference ΔF _{EM of the} electric driving force may be greater than the difference ΔF _{TM of the} thermal driving force. For example, the total driving force in the first region R1 of the fuse link 20f may depend mainly on the difference ΔFEM of the electric driving force.

Referring to Fig. 12B, in the first region R1 of the fuse link 20f, the difference ΔF _{TM of the} thermal driving force may be greater than the difference ΔF _{EM of the} electric driving force. For example, the total driving force of the first region R1 20f of the fuse link may be dependent on the thermal driving force of the main difference △ F _TM.

According to the present embodiment, the stronger the thermal driving force, the stronger the total driving force in the first region R1 in the fuse link 20f. This situation may allow for faster programming of the electrical fuse structure or reduction of the voltage required for the stylized electrical fuse structure under given voltage conditions.

13A and 14A illustrate a third embodiment of the electric fuse structure, and Figs. 13B and 14B illustrate views taken along section lines I-I' and II-II' of Figs. 13A and 14A, respectively.

Referring to Figures 13A, 13B, 14A and 14B, the electrical fuse structure comprises a metal layer 20 on the underlying layer 10, a capping dielectric 30 covering the top surface of the metal layer 20, and a cap dielectric. Interlayer insulating layer 40 on 30. In one embodiment, the metal layer 20 may be formed of a first metal material and may constitute a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a. Additionally, the electrical fuse structure can include a dummy metal plug 50 that is in contact with a portion of the fuse link 20f, and a dummy metal pattern 80 that is provided on the dummy metal plug 50. The first contact plug 60a and the first conductive pattern 90a may be connected to the anode 20a, and the second contact plug 60b and the second conductive pattern 90b may be connected to the cathode 20c.

Similar to the dummy metal plug 50 shown in FIGS. 9C and 10C, the dummy metal plug 50 and the dummy metal pattern 80 can be simultaneously formed using a damascene process. For example, the barrier metal layer 81 may not be formed on the metal layer 53 of the dummy metal plug 50. Between the metal layer 83 of the dummy metal pattern 80.

According to the third embodiment, the contact area between the dummy metal plug 50 and the fuse link 20f can be changed to control the temperature gradient of the fuse link in the stylized program of the electric fuse structure. For example, as shown in Figures 13A and 13B, the dummy metal plug 50 can have a first lower width W2 that is less than the width W1 of the upper portion of the fuse link 20f. The width of the lower portion of the dummy metal pattern 80 may be greater than the upper width W1 of the fuse link 20f. Alternatively, as shown in FIGS. 14A and 14B, the dummy metal plug 50 may have a second lower width W3 that is greater than the upper width W1 of the fuse link 20f. The width of the lower portion of the dummy metal pattern 80 may be greater than the upper width W1 of the fuse link 20f. According to the third embodiment, the temperature gradient of the fuse link 20f in the stylization program may be different between the electric fuse structure in Figs. 13A and 13B and the electric fuse structure in Figs. 14A and 14B.

Fig. 15A illustrates a fourth embodiment of the electric fuse structure, and Fig. 15B illustrates a view taken along section lines I-I' and II-II' in Fig. 15A. Referring to Figures 15A and 15B, the electrical fuse structure can include a metal layer 20 on the underlying layer 10, a capping dielectric 30 overlying the top surface of the metal layer 20, and interlayer dielectric on the cap dielectric 30. Layer 40. The metal layer 20 can be used to form the cathode 20c, the anode 20a, and the fuse link 20f connecting the cathode 20c and the anode 20a.

Additionally, the electrical fuse structure can include a dummy metal plug 50 that is in contact with a portion of the fuse link 20f, and a dummy metal pattern 80 on the dummy metal plug 50. The first contact plug 60a and the first conductive pattern 90a may be connected to the anode 20a. The second contact plug 60b and the second conductive pattern 90b may be connected to the cathode 20c. Similar to the dummy metal plug 50 in FIGS. 9C and 10C, the dummy metal plug 50 and the dummy metal pattern 80 can be simultaneously formed. For example, the barrier metal layer 81 may not be formed between the metal layer 53 of the dummy metal plug 50 and the metal layer 83 of the dummy metal pattern 80.

In the present embodiment, the positions of the dummy metal plugs 50 and the dummy metal patterns 80 may be changed with respect to the anode 20a and the cathode 20c. For example, in FIG. 15A, the distance between the dummy metal plug 50 and the anode 20a may be greater than the distance between the dummy metal plug 50 and the cathode 20c. The position of the dummy metal plug 50 can be varied to control the position of the void which will be formed in the stylized program of the electrical fuse structure.

Fig. 16A illustrates a fifth embodiment of the electric fuse structure, and Fig. 16B illustrates a view taken along section lines I-I' and II-II' in Fig. 16A. 16A and 16B, the electrical fuse structure can include a metal layer 20 on the underlying layer 10, a capping dielectric 30 overlying the top surface of the metal layer 20, and interlayer dielectric on the cap dielectric 30. Layer 40. In one embodiment, the metal layer 20 may be formed of a first metal material and may form a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a.

The electrical fuse structure may also include a first dummy metal plug 50a and a second dummy metal plug 50b that are in contact with a portion of the fuse link 20f. The first dummy metal pattern 80a and the second dummy metal pattern 80b may be respectively provided on the first dummy metal plug 50a and the second dummy metal plug 50b. The first dummy metal plug 50a and the second dummy metal plug 50b may be between the anode 20a and the cathode 20c and spaced apart from each other. Each of the first dummy metal plug 50a and the second dummy metal plug 50b may include a barrier metal layer 51 and a metal layer 53. The barrier metal layer 51 may be formed of a second metal material different from the first metal material and having a conductivity lower than that of the first metal material. The first contact plug 60a and the first conductive pattern 90a may be connected to the anode 20a. The second contact plug 60b and the second conductive pattern 90b may be connected to the cathode 20c.

In other embodiments, similar to the dummy metal plug 50 in FIG. 9C and FIG. 10C, the first dummy metal plug 50a and the first dummy metal pattern 80a can simultaneously form. Similarly, the second dummy metal plug 50b and the second dummy metal pattern 80b may be simultaneously formed.

Fig. 17A illustrates a sixth embodiment of the electric fuse structure, and Fig. 17B illustrates a view taken along section lines I-I' and II-II' in Fig. 17A. Referring to Figures 17A and 17B, the electrical fuse structure can include a metal layer 20 on the underlying layer 10, a capping dielectric 30 overlying the top surface of the metal layer 20, and interlayer dielectric on the cap dielectric 30. Layer 40. The metal layer 20 may form a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a, and a dummy fuse link 20d disposed at each side of the fuse link 20f. The dummy fuse link 20d may have, for example, substantially the same line width as the fuse link 20f, and may extend parallel to the fuse link 20f. The dummy fuse link 20d is separable from the anode 20a, the cathode 20c, and the fuse link 20c.

The electrical fuse structure can include a dummy metal plug 50 that is in contact with a portion of the fuse link 20f, and a dummy metal pattern 80 on the dummy metal plug 50. The width of the dummy metal pattern 80 may be smaller than the interval D between one of the adjacent dummy fuse chains 20d adjacent to the dummy metal pattern 80. Similar to the dummy metal plug 50 in FIGS. 9C and 10C, the dummy metal plug 50 and the dummy metal pattern 80 can be simultaneously formed. For example, the barrier metal layer 81 may not be formed between the metal layer 53 of the dummy metal plug 50 and the metal layer 83 of the dummy metal pattern 80.

Fig. 18A illustrates a seventh embodiment of the electric fuse structure, and Fig. 18B illustrates a cross-sectional view taken along lines I-I' and II-II' of Fig. 18A. A seventh embodiment of an electrical fuse structure includes a metal layer 20 formed in the underlying layer 10, a cap dielectric 30 overlying the top surface of the metal layer 20, and an interlayer insulating layer over the cap dielectric 30 40. The metal layer 20 may be formed of, for example, a first metal material, and may constitute a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a.

Additionally, the electrical fuse structure can include a dummy metal plug 50 that is in contact with a portion of the fuse link 20f, and a dummy metal pattern 80 on the dummy metal plug 50. The dummy metal plug 50 can extend in a direction substantially perpendicular to the longitudinal axis of the fuse link 20f. As described above, the dummy metal plug 50 may include the barrier metal layer 51 and the metal layer 53. The barrier metal layer 51 may be formed of a second metal material different from the first metal material, and the metal layer 53 may be formed of a third metal material different from the second metal material.

In addition, the first contact plug 60a and the first conductive pattern 90a may be connected to the anode 20a. The second contact plug 60b and the second conductive pattern 90b may be connected to the cathode 20c. In the present embodiment, the first contact plug 60a and the second contact plug 60b may extend parallel to the dummy metal plug 50.

In addition, in the present embodiment, the first conductive pattern 90a and the second conductive pattern 90b can be formed by the following operations: the first contact plug 60a and the second contact plug 60b and the dummy metal plug 50 are provided. A second interlayer insulating layer 70 is formed on the interlayer insulating layer 40, a via hole 71 and a trench 73 are formed in the second interlayer insulating layer 70, and a second barrier metal layer is sequentially formed in the via 71 and the trench 73. And a second metal layer. The top surface of the dummy metal plug 50 can be covered, for example, by a second interlayer insulating layer 70.

Figure 19 illustrates a modification of the seventh embodiment of the electrical fuse structure. Referring to FIG. 19, the electrical fuse structure can include a metal layer 20 on the underlying layer 10, a cap dielectric 30 overlying the top surface of the metal layer 20, and an interlayer insulating layer 40 over the cap dielectric 30. The metal layer 20 may be formed of, for example, a first metal material, and may constitute a cathode 20c, an anode 20a, and a fuse link 20f connecting the cathode 20c and the anode 20a. The width of the anode 20a and the cathode 20c may be greater than the width of the fuse link 20f. Electric fuse structure A dummy metal plug 50 that is in contact with a portion of the fuse link 20f, and a dummy metal pattern 80 on the dummy metal plug 50 may be included.

In the present embodiment, a plurality of first contact plugs 60a may be connected to the anode 20a. The first conductive patterns 90a may be commonly connected to the plurality of first contact plugs 60a. Similarly, a plurality of second contact plugs 60b can be connected to the cathode 20c, and the second conductive patterns 90b can be commonly connected to the plurality of second contact plugs 60b.

20A, 20B, 21A and 21B illustrate additional modifications of the seventh embodiment of the electrical fuse structure. Referring to Figures 20A, 20B, 21A and 21B, the electrical fuse structure may include an anode 20a, a cathode 20c, and a fuse link 20f connecting the cathode 20c and the anode 20a. The anode 20a, the cathode 20c, and the fuse link 20f may have substantially the same uniform line width.

Additionally, the electrical fuse structure can include a dummy metal plug 50 that is in contact with a portion of the fuse link 20f. The dummy metal plug 50 can extend in a direction substantially perpendicular to the longitudinal axis of the fuse link 20f. The dummy metal plug 50 may include a barrier metal layer 51 and a metal layer 53. The barrier metal layer 51 may be formed of a second metal material different from the first metal material, and the metal layer 53 may be formed of a third metal material different from the second metal material.

According to the embodiment of Figures 20A and 20B, a plurality of first contact plugs 60a can be coupled to the top surface of the anode 20a, and a plurality of second contact plugs 60b can be coupled to the top surface of the cathode 20c. Each of the first contact plug 60a and the second contact plug 60b can have, for example, a rod shape to have a longitudinal axis that is perpendicular to the axis of the fuse link 20f. The first contact plug 60a and the second contact plug 60b may be formed of the same material as the dummy metal plug 50.

The first conductive patterns 90a may be commonly connected to the first contact plugs 60a. The second conductive patterns 90b may be commonly connected to the second contact plugs 60b. The first conductive pattern 90a can be formed by forming a plurality of vias 71 and trenches 73 connected to the vias 71 in the second interlayer insulating layer 70, and then sequentially in the vias 71 and the trenches 73. A barrier metal layer and a metal layer are formed. The through holes 71 may be formed on the respective first contact plugs 60a and may be spaced apart from each other, for example, in a first direction and a second direction that intersect each other. The second conductive pattern 90b may be formed in the same manner as the first conductive pattern 90a.

According to the embodiment of Figures 21A and 21B, a plurality of first contact plugs 60a can be coupled to the anode 20a, and a plurality of second contact plugs 60b can be coupled to the cathode 20c. The first conductive patterns 90a may be commonly connected to the plurality of first contact plugs 60a. The second conductive patterns 90b may be commonly connected to the plurality of second contact plugs 60b. In the present embodiment, the first contact plug 60a and the second contact plug 60b may be substantially parallel to the dummy metal plug 50. For example, the first contact plug 60a and the second contact plug 60b can extend in a direction substantially perpendicular to the longitudinal axis of the fuse link 20f.

The first conductive pattern 90a and the second conductive pattern 90b can be formed by forming a plurality of vias 71 and trenches 73 connected to the vias 71 in the second interlayer insulating layer 70, and then in the vias 71 and A barrier metal layer and a metal layer are sequentially formed in the trench 73. The through holes 71 of the first conductive patterns 90a may be formed to expose the first contact plugs 60a adjacent to each other. The through holes 71 of the second conductive patterns 90b may be formed to expose the second contact plugs 60b adjacent to each other.

22 and FIG. 23 illustrate an eighth embodiment of an electrical fuse structure including an anode pattern 110a, a cathode pattern 110b, a fuse link 130, and a first contact plug connecting the anode pattern 110a and the fuse link 130. a plug 125a, a second contact plug 125b connecting the cathode pattern 110b and the fuse link 130, and a portion of the fuse link 130 A dummy metal plug 150 that is contacted. In this embodiment, the fuse link 130 may be at a different level than the anode pattern 110a and the cathode pattern 110b.

The anode pattern 110a and the cathode pattern 110b may be formed in the underlying layer 100, for example, by a damascene process, and may be spaced apart from each other. The first contact plug 125a may be connected to the anode pattern 110a through the first interlayer insulating layer 120. The second contact plug 125b may be connected to the cathode pattern 110b through the first interlayer insulating layer 120.

The fuse link 130 may be formed by patterning a metal layer made of a first metal material, and may be provided on the first interlayer insulating layer 120. The fuse link 130 can be connected to the first contact plug 125a and the second contact plug 125b. The second interlayer insulating layer 140 may be on the first interlayer insulating layer 120 having the fuse link 130. The cap dielectric 135 can be interposed between the second interlayer insulating layer 140 and the fuse link 130.

The dummy metal plug 150 may penetrate the second interlayer insulating layer 140 and the cap dielectric 135 and may contact a portion of the fuse link 130. The dummy metal plug 150 may include a barrier metal layer 151 and a metal layer 153. The barrier metal layer 151 may be formed of a second metal material different from the first metal material constituting the fuse link 130. The metal layer 130 may be formed of a third metal material different from the second metal material.

Referring to FIG. 23, an anode pattern 110 may be provided on the underlying layer 100, a fuse link 130 may be provided at a first level relative to the underlying layer 100, and a cathode pattern 160 may be provided in relation to the underlying layer 100. At the second level. The second level can be higher than the first level.

For example, the first interlayer insulating layer 120 may be provided on the underlying layer 100 of the anode pattern 110. The first contact plug 125 may be connected to the anode pattern 110 through the first interlayer insulating layer 120. A fuse link 130 can be provided on the first contact plug 125. The fuse link 130 may be formed of a first metal material. The first contact plug 125 can be connected to The end portion of the fuse link 130. The fuse link 130 can be formed in the first interlayer insulating layer 120, for example, by a damascene process.

The cap dielectric 135 and the second interlayer insulating layer 140 may be sequentially formed on the fuse link 130. The second contact plug 155 can be connected to the other end portion of the fuse link 130. A dummy metal plug 150 may be provided in a portion of the second interlayer insulating layer 140, and the dummy metal plug 150 is spaced apart from the second contact plug 155. The dummy metal plug 150 may be formed simultaneously with the second contact plug 155. Each of the dummy metal plug 150 and the second contact plug 155 may include a barrier metal layer 151 and a metal layer 153.

The barrier metal layer 151 may be formed of a second metal material different from the first metal material. The metal layer 153 may be formed of a third metal material different from the second metal material. Further, the cathode pattern 160 may be provided in the second interlayer insulating layer 140 and may be connected to the second contact plug 155. The dummy metal plug 150 may include a contact portion and an interconnection portion.

24A and 24B illustrate a ninth embodiment of an electric fuse structure having a three-dimensional structure. The electrical fuse structure can include a cathode pattern 210, a fuse link 220, and an anode pattern 230. The cathode pattern 210 can be on the underlying layer 200, the fuse link 220 can be in a first level relative to the top surface of the underlying layer 200, and the anode pattern 230 can be provided on a second level relative to the top surface of the underlying layer 200. . The second level can be higher than the first level. Further, the dummy fuse link 220d may be provided on the same level as the fuse link 220.

In this embodiment, to efficiently collect heat during the stylization operation, the cathode pattern 210 can include a first portion 210a that extends in a first (eg, x-axis) direction, and a second (eg, y-axis) direction. The second portion 210b extends upward. The first contact plug 215 can connect the cathode pattern 210 to the fuse link 220.

Similar to the cathode pattern 210, the anode pattern 230 can be included along the first (eg, For example, the first portion 230a extending in the x-axis direction and the second portion 230b extending in the second (eg, y-axis) direction. The second contact plug 225 can connect the fuse link 220 to the anode pattern 230. As seen from the plan view, the first contact plug 215 and the second contact plug 225 may not overlap each other.

The cathode pattern 210, the fuse link 220, and the anode pattern 230 may be formed of a first metal material including, for example, at least one of tungsten (W), aluminum (Al), copper (Cu), or a copper alloy. By. Examples of the copper alloy include a copper-based material in which C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt are contained in a small amount or a predetermined amount. At least one of Mg, Al or Zr.

The electrical fuse structure can include a dummy metal plug 235 and a dummy metal pattern 240. The dummy metal plug 235 may contact a portion of the anode pattern 230. According to the embodiment of FIG. 24A, the dummy metal plug 235 can be coupled to the first portion 230a of the anode pattern 230 and can be disposed adjacent to the second contact plug 225 from a plan view. In contrast, in FIG. 24B, the dummy metal plug 235 can be spaced apart from the second contact plug 225 from the viewpoint of the plan view.

The dummy metal plug 235 may include a barrier metal layer and a metal layer. The barrier metal layer may be formed of a second metal material different from the first metal material of the anode pattern 230. The metal layer may be formed of a third metal material different from the barrier metal layer. The second metallic material can have a conductivity that is lower than the electrical conductivity of the first metallic material. Further, the dummy metal pattern 240 may be connected to the top surface of the dummy metal plug 235.

The use of the three-dimensional electrical fuse structure of Figures 24A and 24B makes it possible to collect heat more efficiently during the stylization procedure, thereby improving the performance of the stylized program. During the stylization process, a negative voltage can be applied to the cathode pattern 210, a positive voltage can be applied to the anode pattern 230, and the dummy metal plug 235 and the dummy metal pattern 240 can be in Electrically floating state.

The voltage difference between the cathode pattern 210 and the anode pattern 230 produces a stylized current. As a result, electrons flow from the cathode pattern 210 toward the anode pattern 230 through the fuse link 220. The current can change the electrical and thermal driving forces at the anode pattern 230 beneath the dummy metal plug 235. Therefore, a void may be formed at a portion of the anode pattern 230 adjacent to the dummy metal plug 235.

25A-25C illustrate an embodiment of a semiconductor component, each of which includes at least one electrical fuse structure in accordance with any of the preceding embodiments. Referring to FIGS. 25A to 25C, the semiconductor substrate 300 includes a memory cell region A and a fuse region B. The MOS transistor is formed on the memory cell region A of the semiconductor substrate 300, and the electric fuse structure is formed on the fuse region B of the semiconductor substrate 300.

The element isolation layer 301 may be formed on the semiconductor substrate 300 to define an active region, and the gate electrode 310g may be formed to cross the active region. The impurity regions may be formed in portions of the semiconductor substrate 300 at respective sides of the gate electrode 310g. The first interlayer insulating layer 320 may be on the semiconductor substrate 300 having the MOS transistor and the electric fuse structure. The cell contact plug 321 may be electrically connected to the MOS transistor via the first interlayer insulating layer 310.

The first interconnect 325 may be provided on the first interlayer insulating layer 320 of the memory cell region A. Each of the first interconnects 325 can be electrically connected to at least one of the cell contact plugs 321 . The second interlayer insulating layer 330 may be disposed on the first interlayer insulating layer. The second interconnect 335 may be disposed in the second interlayer insulating layer 330. The second interconnect 335 may have a line width greater than a line width of the first interconnect 325.

Further, a third interlayer insulating layer 340 may be provided on the second interlayer insulating layer 330. The third interconnect line 345 may be disposed in the third interlayer insulating layer 340. The third interconnect 345 may have a line width greater than a line width of the second interconnect 335.

According to the embodiment of FIG. 25A, the fuse link 310f may be formed on the element isolation layer 301 of the fuse region B, and the top surface of the fuse link 310f may be covered by the cap dielectric 315. The fuse link 310f may be formed simultaneously with the gate electrode 310g of the memory cell region A, and may be formed of a first metal material. The first metal material may be formed of at least one of tungsten (W), aluminum (Al), copper (Cu), or a copper alloy. Examples of the copper alloy include a copper-based material in which C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt are contained in a small amount or a predetermined amount. At least one of Mg, Al or Zr.

In the fuse region B, the first contact plug 321a and the second contact plug 321b and the dummy metal plug 321d may be connected to the fuse link 310f via the first interlayer insulating layer 320. The dummy metal plug 321d may include a barrier metal layer and a metal layer. The barrier metal layer may be formed of a second metal material different from the first metal material. The metal layer may be formed of a third metal material. The dummy metal plug 321d can be formed simultaneously with the contact plug 321 of the memory cell area A.

The first conductive pattern 325a and the second conductive pattern 325b and the dummy metal pattern 325d may be provided on the first interlayer insulating layer 320 of the fuse region B. The first conductive pattern 325a may be electrically connected to the first contact plug 321a, and the second conductive pattern 325b may be electrically connected to the second contact plug 321b. The dummy metal pattern 325d may contact the top surface of the dummy metal plug 321d. The first conductive pattern 325a and the second conductive pattern 325b and the dummy metal pattern 325d may be formed simultaneously with the first interconnect line 325 of the memory cell region A.

According to the embodiment of FIG. 25B, the electrical fuse structure of the fuse region B can be formed simultaneously with the first interconnect 325 of the memory cell region A. The fuse link 325f of the electric fuse structure may be formed on the first interlayer insulating layer 320, and the top table of the semiconductor substrate 300 Separated by faces. The first interconnect 325 and the fuse link 325f may be formed of a first metal material, and a top surface of the fuse link 325f may be covered by a cap dielectric 327.

In the fuse region B, the first contact plug 331a and the second contact plug 331b and the dummy metal plug 331d may be connected to the fuse link 310f via the second interlayer insulating layer 330 and the cap dielectric 327. The dummy metal plug 331d may include a barrier metal layer and a metal layer. The barrier metal layer is formed of a second metal material different from the first metal material. The metal layer is formed of a third metal material.

The first conductive pattern 335a and the second conductive pattern 335b and the dummy metal pattern 335d may be provided on the second interlayer insulating layer 330 of the fuse region B. The first conductive pattern 335a may be electrically connected to the first contact plug 331a, and the second conductive pattern 335b may be electrically connected to the second contact plug 331b.

According to the embodiment of FIG. 25C, the electrical fuse structure of the fuse region B can be formed simultaneously with the third interconnect line 345 of the memory cell region A. The electrical fuse structure can include a fuse link 345f spaced from the top surface of the semiconductor substrate 300. The third interconnect 345 and the fuse link 345f may be formed of a first metal material, and a top surface of the fuse link 345f may be covered by a cap dielectric 347.

In the fuse region B, the first contact plug 351a and the second contact plug 351b and the dummy metal plug 351d may be connected to the fuse link 345f via the third interlayer insulating layer 340 and the cap dielectric 347. The dummy metal plug 351d may include both: a barrier metal layer formed of a second metal material different from the first metal material; and a metal layer formed of a third metal material.

The first conductive pattern 353a and the second conductive pattern 353b and the dummy metal pattern 353d may be provided on the third interlayer insulating layer 340 of the fuse region B. The first conductive pattern 353a may be electrically connected to the first contact plug 351a, and the second conductive pattern 353b It can be electrically connected to the second contact plug 351b.

FIG. 26 illustrates an embodiment of a memory system 1100 incorporating a semiconductor component in accordance with any of the preceding embodiments. Referring to Figure 26, the memory system 1100 can be applied to, for example, a PDA (Personal Digital Assistant), a portable computer, a web tablet, a wireless telephone, a mobile phone, a digital music player, a memory card, and/or can be in a wireless communication environment. All components that transmit and/or receive data.

The memory system 1100 includes a controller 1110, input/output components 1120 (eg, keypads and/or display elements), memory 1130, interface 1140, and busbars 1150. The memory 1130 and the interface 1140 can communicate with each other via the bus bar 1150.

Controller 1110 can include a microprocessor, a digital signal processor, a microcontroller, and/or other processing elements similar to microprocessors, digital signal processors, and microcontrollers. Memory 1130 can be used to store instructions that are executed by controller 1110. Input/output component 1120 can receive data and/or signals from system external 1100 and/or transmit data and/or signals external to system 1100. For example, input/output component 1120 can include a keyboard, a keypad, and/or a display.

The memory 1130 may comprise a semiconductor component according to any of the preceding embodiments. The memory 1130 may further comprise different kinds of memory, such as volatile memory elements such as random access memory, and/or other kinds of memory. The interface 1140 can transmit data to and/or receive data from the communication network.

Figure 27 illustrates an embodiment of a memory card 1200 incorporating a semiconductor component in accordance with any of the preceding embodiments. Referring to Figure 27, memory card 1200 can have a large or other predetermined capacity storage capability and can include semiconductor memory component 1210 in accordance with any of the preceding embodiments. The memory card 1200 can include a memory controller 1220 that can control the exchange of data between the host and the semiconductor memory component 1210.

Static Random Access Memory (SRAM) 1221 can be used, for example, as an operational memory for processing unit 1222. The host interface 1223 can include a data exchange protocol that can be connected to a host of the memory card 1200. Error correction block 1224 can detect and/or correct errors in the material read from multi-bit semiconductor memory component 1210.

The memory interface 1225 can interface with the semiconductor memory component 1210. Processing unit 1222 can perform control operations to exchange data for memory controller 1220. Memory card 1200 can include, for example, a ROM for storing code, instructions, or other information for interfacing with a host.

FIG. 28 illustrates an embodiment of an information processing system 1300 incorporating semiconductor components in accordance with any of the preceding embodiments. Referring to Figure 28, information processing system 1300 includes a memory system 1310 having semiconductor components.

The memory system 1310 can be mounted to an information processing system, which can be, for example, a mobile device and/or a desktop computer. The information processing system 1300 can include a data machine 1320, a central processing unit (CPU) 1330, a RAM 1340, and a user interface 1350 that is electrically coupled to the system bus 1360. The memory system 1310 can be configured similarly to that of FIG. 20 and can include a semiconductor component 1311 and a memory controller 1312.

The memory system 1310 can be, for example, a solid state drive SSD, and can store data to be processed by the CPU 1330 or processed by the CPU 1330, and/or data input from an external source. The information processing system 1300 can reliably store a large amount or a predetermined amount of data in the memory system 1310. The memory system 1310 can save resources for error correction and can also provide high speed data exchange functions. In one embodiment, information processing system 1300 can include an application wafer set, a camera image processor (CIS), and/or input/output elements.

In accordance with one or more of the foregoing embodiments, the electrical fuse structure includes a dummy metal plug attached to the fuse link. The fuse link may be formed of a first metal material, and the dummy metal plug may comprise a second metal material. Thus, during the stylization procedure of the electrical fuse structure, the temperature gradient of the fuse link and the driving force caused by electromigration can be controlled to increase the total driving force applied to the fuse link. As a result, the electrical fuse structure can be programmed with a reduced operating voltage.

According to one or more of the foregoing embodiments, the total driving force applied to the fuse link can be controlled by adjusting the volume or contact area of the dummy metal plug and/or the number of dummy metal plugs. Additionally, the location of the dummy metal plug can be adjusted to control the location of the void to be formed in the stylized program of the electrical fuse structure.

The example embodiments are disclosed herein, and the specific terms are used and are to be construed in a In some instances, as will be apparent to those skilled in the art, the features, characteristics, and/or devices described in connection with the specific embodiments may be used individually or in combination with features described in other embodiments. Features and / or devices are used unless otherwise indicated. It will be appreciated by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention as set forth in the appended claims.

20a‧‧‧Anode

20c‧‧‧ cathode

20f‧‧‧fuse chain

50‧‧‧Virtual metal plug

R1‧‧‧ first district

R2‧‧‧Second District

R3‧‧‧ Third District

Claims (20)

An electric fuse structure of a semiconductor component, comprising: a fuse link of a first metal material connecting a cathode and an anode; a cover dielectric covering a top surface of the fuse link; and penetrating the cover a dummy metal plug electrically contacting the fuse link, the dummy metal plug comprising a barrier metal layer interposed between the metal layer and the fuse link, wherein the barrier metal layer comprises a different a second metallic material of the first metallic material. The electric fuse structure of claim 1, wherein the first metal material has a conductivity greater than a conductivity of the second metal material. The electric fuse structure according to claim 1, wherein the first metal material comprises at least one of tungsten, aluminum, copper or a copper alloy, and the second metal material comprises Ta, TaN, At least one of TaSiN, Ti, TiN, TiSiN, W, WN, or a combination thereof. The electric fuse structure of claim 1, wherein: the fuse link is for carrying a stylized current, and the fuse link has a stroma between the anode and the The gap between the dummy metal plugs. The electrical fuse structure of claim 4, wherein a distance between the void and the dummy metal plug is less than a distance between the void and the anode. The electric fuse structure of claim 1, wherein a lower width of the dummy metal plug is smaller than an upper width of the fuse link. The electric fuse structure of claim 1, wherein: a width of a lower portion of the dummy metal plug is greater than an upper width of the fuse link, and the dummy metal plug contacts the fuse link Top surface and side surface. The electric fuse structure of claim 1, wherein the barrier metal layer covers a bottom surface and a side surface of the metal layer. The electric fuse structure of claim 8, wherein the barrier metal layer on the bottom surface of the metal layer is one or both of the side surfaces of the metal layer The barrier metal layer on the person is thick. The electric fuse structure of claim 1, wherein a bottom surface of the dummy metal plug is between a top surface and a bottom surface of the fuse link. The electrical fuse structure of claim 1, wherein the metal layer comprises a contact portion having a first width and an interconnect portion having a second width greater than the first width. The electrical fuse structure of claim 1, further comprising: a dummy metal pattern on a top surface of the dummy metal plug, wherein the dummy metal pattern has a thickness greater than the thickness of the fuse link thickness of. The electric fuse structure of claim 1, wherein: the anode and the cathode are at different levels, and the fuse link and the dummy metal plug are at the anode and the cathode between. The electric fuse structure of claim 1, wherein: the anode and the cathode are in a first layer with respect to a top surface of the underlying layer The fuse link is at a second level with respect to the top surface of the underlying layer, and the second level is higher than the first level. An electric fuse structure of a semiconductor component, comprising: a fuse link of a first metal material connecting a cathode and an anode; an interlayer insulating layer covering the anode, the cathode and the fuse link; a cap dielectric between the top surface of the wire and the interlayer insulating layer, the cap dielectric comprising an insulating material different from the interlayer insulating layer; and penetrating the interlayer insulating layer and the a dummy metal plug covering the dielectric and contacting the fuse link, the dummy metal plug including a barrier metal layer between the metal layer and the fuse link, wherein the barrier metal layer comprises different And a second metal material of the first metal material. The electric fuse structure of claim 15, wherein the first metal material has a conductivity greater than a conductivity of the second metal material. An electric fuse structure of a semiconductor component, comprising: a fuse link of a first metal material connecting a cathode and an anode; a cover dielectric covering a top surface of the fuse link; and penetrating the cover a dummy metal plug electrically contacting the fuse link, wherein the fuse link is for carrying a programmed current, and wherein the dummy metal plug is for carrying the program in the fuse link The temperature gradient in the fuse link is changed when the current is changed. The electric fuse structure as described in claim 17 of the patent application, wherein: The dummy metal plug includes a barrier metal layer between the metal layer and the fuse link, and the barrier metal layer includes a second metal material different from the first metal material. The electric fuse structure of claim 17, wherein: the fuse link includes a first region in contact with the dummy metal plug, and a second region in contact with the dielectric of the cover And the temperature of the fuse link has a maximum at the second region when the fuse chain carries the stylized current. The electric fuse structure of claim 17, wherein the fuse link has a gap between the anode and the dummy metal plug in a stylized state.