CN108305867A - The electric fuse structure of semiconductor device - Google Patents

The electric fuse structure of semiconductor device Download PDF

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Publication number
CN108305867A
CN108305867A CN201810309622.0A CN201810309622A CN108305867A CN 108305867 A CN108305867 A CN 108305867A CN 201810309622 A CN201810309622 A CN 201810309622A CN 108305867 A CN108305867 A CN 108305867A
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China
Prior art keywords
fuse
link
plug
electric
dummy metal
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Granted
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CN201810309622.0A
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CN108305867B (en
Inventor
崔贤民
前田茂伸
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Provide a kind of electric fuse structure of semiconductor device.The electric fuse structure may include：The fuse-link of first metal material connects cathode and anode；Covering dielectric covers the top surface of fuse-link；And dummy metal plug, through covering dielectric and contact fuse-link, dummy metal plug includes the barrier metal layer between metal layer and fuse-link, wherein, barrier metal layer includes second metal material different from the first metal material, wherein, the width of fuse-link is substantially equal or smaller than the width of anode and the width of cathode.

Description

The electric fuse structure of semiconductor device
The application is " partly to be led for the entitled of October 9 in 2014 applying date submitted to China State Intellectual Property Office The divisional application of No. 201410528528.6 application of the electric fuse structure of body device ".
Technical field
One or more embodiments described herein are related to a kind of electric fuse structure of semiconductor device.
Background technology
Fuse is used in semiconductor chip manufactures and designs for various purposes.For example, in the storage device, Fuse has been used for substituting defective storage unit using redundant storage unit during renovation technique.This replacement has Help improve manufacturing yield.The manufacture history of memorization COMS clip is carried out using fuse during chip identification process.In core Make the characteristic optimization of chip in the post-manufacture manipulations of piece customization procedure using fuse.
Fuse is divided into laser fuse or electric fuse.In laser fuse, electrical connection is cut off using laser beam. In electric fuse, the purpose is realized using electric current.
Invention content
According to one embodiment, a kind of electric fuse structure of semiconductor device includes：The fuse-link of first metal material, even Connect cathode and anode；Covering dielectric covers the top surface of fuse-link；And dummy metal plug, through covering dielectric and connect Fuse-link is touched, dummy metal plug includes the barrier metal layer between metal layer and fuse-link, wherein barrier metal layer includes Second metal material different from the first metal material.Wherein, the width of fuse-link be substantially equal or smaller than anode width and The width of cathode.
The electric fuse structure further includes：Dummy metal pattern is located on the top surface of dummy metal plug；And it is illusory molten Disconnected body, is located at each side of fuse-link, wherein the thickness of dummy metal pattern is more than the thickness of fuse-link, and illusory The width of metal pattern is less than the distance between illusory fuse-link.
Multiple dummy metal plugs can be between anode and cathode.Dummy metal plug can fuse-link along a direction substantially perpendicular Longitudinal axis direction extend.
Fuse-link is by conduction programming electric current, and dummy metal plug can change fusing in fuse-link conduction programming electric current Temperature gradient in body.
Fuse-link may include the first area contacted with dummy metal plug and the second area that is contacted with covering dielectric, And in fuse-link conduction programming electric current, the temperature of fuse-link can have maximum value at second area.
Fuse-link includes the first area contacted with dummy metal plug and the second area that is contacted with covering dielectric, electric smelting Silk structure is led at the first area of fuse-link by electromigration by conduction programming electric current, and during the supply of program current Cause the first electrical drive power from the second area of fuse-link the second electrical drive power caused by electromigration it is different.
According to another embodiment, a kind of electric fuse structure of semiconductor device includes：The fuse-link of first metal material, will Cathode is connect with anode；Interlayer insulating film, covering anode, cathode and fuse-link；Covering dielectric is located at the top surface of fuse-link Between interlayer insulating film, covering dielectric includes the insulating materials different from interlayer insulating film；Dummy metal plug runs through interlayer Insulating layer and covering dielectric simultaneously contact fuse-link, and dummy metal plug includes the barrier metal between metal layer and fuse-link Layer, wherein barrier metal layer includes second metal material different from the first metal material.Barrier metal layer covers metal layer Bottom surface and side surface.
First metal material may include at least one of tungsten, aluminium, copper and copper alloy, and the second metal material may include At least one of Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN and combination thereof.Barrier metal layer is at the bottom of metal layer It can be thicker than on the side surface of metal layer on surface.
For fuse-link by conduction programming electric current, and under programming state, fuse-link can be in anode and dummy metal plug Between have gap.The distance between gap and dummy metal plug can be less than the distance between gap and anode.
According to another embodiment, a kind of electric fuse structure of semiconductor device includes：Anode is connected to the moon by fuse-link Pole, and will based on programming electric current and be programmed；Dummy metal plug, contacts with fuse-link, wherein fuse-link includes the first metal Material, dummy metal plug includes second metal material different from the first metal material, empty in fuse-link conduction programming electric current If metal closures change electrical drive power and thermal driving force, wherein electrical drive power and thermal driving force be in fuse-link electromigration and Based on thermophoresis.
Dummy metal plug may include the barrier metal layer between metal layer and fuse-link, and barrier metal layer can wrap Include the second metal material.The conductivity of first metal material can be more than the conductivity of the second metal material.It is conducted in fuse-link When program current, total driving force can have maximum value between anode and dummy metal plug.Total driving force can be driven with electricity Based on the sum of power and thermal driving force.
Electric fuse structure can also include：Interlayer insulating film, covering anode, cathode and fuse-link；And covering dielectric, Between the top surface and interlayer insulating film of fuse-link, covering dielectric includes different from the insulating materials of interlayer insulating film Insulating materials, wherein fuse-link includes the first area contacted with dummy metal plug and the secondth area contacted with covering dielectric Domain.
The first electrical drive power caused by electromigration can be less than the second of fuse-link at the first area of fuse-link The second electrical drive power caused by electromigration at region.In fuse-link conduction programming electric current, the temperature of fuse-link can be There is maximum value at two regions.
Description of the drawings
Describe exemplary embodiment in detail by referring to accompanying drawing, feature will become clear for those skilled in the art Chu, in the accompanying drawings：
Fig. 1 shows the electromigration effect in the programming technique of one embodiment of electric fuse structure；
Fig. 2 shows the thermophoresis in the programming technique of one embodiment in electric fuse structure；
Fig. 3 shows the thermophoresis and electromigration in the programming technique of the embodiment of electric fuse structure；
Fig. 4 A show that the first embodiment of electric fuse structure, Fig. 4 B show hatching I-I' and hatching in Fig. 4 A The diagram of II-II'；
Fig. 5 shows the electromigration in the programming technique of the first embodiment of electric fuse structure；
Fig. 6 shows the thermophoresis in the programming technique of the first embodiment of electric fuse structure；
Fig. 7 shows the thermophoresis and electromigration in the programming technique of the first embodiment of electric fuse structure；
Fig. 8 A to Fig. 8 C show the sectional view of the modification of the first embodiment of electric fuse structure；
Fig. 9 A and Figure 10 A show that the second embodiment of electric fuse structure, Fig. 9 B and Figure 10 B are shown respectively along Fig. 9 A and figure The diagram of hatching I-I' and hatching II-II' in 10A, Fig. 9 C and Figure 10 C show the second embodiment of electric fuse structure Modification；
Figure 11 A and Figure 12 A show the thermophoresis in the programming technique of the second embodiment of electric fuse structure, Figure 11 B and 12B shows the thermophoresis and electromigration in the programming technique of the second embodiment of electric fuse structure；
Figure 13 A and Figure 14 A show the 3rd embodiment of electric fuse structure, Figure 13 B and Figure 14 B be shown respectively along Figure 13 A and The diagram of hatching I-I' and hatching II-II' in Figure 14 A；
Figure 15 A show that the fourth embodiment of electric fuse structure, Figure 15 B show hatching I-I' and section in Figure 15 A The diagram of line II-II'；
Figure 16 A show that the 5th embodiment of electric fuse structure, Figure 16 B show hatching I-I' and section in Figure 16 A The diagram of line II-II'；
Figure 17 A show that the sixth embodiment of electric fuse structure, Figure 17 B show hatching I-I' and section in Figure 17 A The diagram of line II-II'；
Figure 18 A show that the 7th embodiment of electric fuse structure, Figure 18 B show hatching I-I' and section in Figure 18 A The diagram of line II-II'；
Figure 19 shows the modification of the 7th embodiment of electric fuse structure；
Figure 20 A, Figure 20 B, Figure 21 A and Figure 21 B show the modification of the 7th embodiment of electric fuse structure；
Figure 22 and Figure 23 shows the 8th embodiment of electric fuse structure；
Figure 24 A and Figure 24 B show the 9th embodiment of electric fuse structure；
Figure 25 A to Figure 25 C show that the embodiment of semiconductor device, each semiconductor device include according in previous embodiment One or more embodiments electric fuse structure；
Figure 26 shows to include the storage system according to the semiconductor device of one or more embodiments in previous embodiment System；
Figure 27 shows to include the storage card according to the semiconductor device of one or more embodiments in previous embodiment；
Figure 28 shows to include at the information according to the semiconductor device of one or more embodiments in previous embodiment Reason system.
Specific implementation mode
Example embodiment is hereinafter more fully described with reference to the accompanying drawings now；However, they can be with different shapes Formula is implemented, and should not be construed as limited to embodiment set forth herein.Certainly, these embodiments provided make this Open will be thorough and complete, and can illustrative embodiment be fully conveyed to those skilled in the art.
In the accompanying drawings, clear in order to what is shown, the size of layer and region can be exaggerated.It will be further understood that working as layer or element When being referred to as " " another layer or substrate "upper", the layer or element can be directly on another layers or substrate, or also may be used With there are middle layers.In addition, it will be understood that when layer be referred to as " " another layer " under " when, which can be directly its it Under, there may also be one or more middle layers.In addition, it will be further understood that when layer be referred to as " " two layers " between " When, this layer can be the sole layer between described two layers, or there may also be one or more middle layers.It is same attached Icon note always shows same element.
In addition, it will be understood that when element is referred to as being " connected " or " in conjunction with " arrives another element, which can be straight Another element is connect or be attached in succession, or may exist intermediary element.On the contrary, when element be referred to as " being directly connected to " or When " binding directly " arrives another element, then intermediary element is not present.Same label always shows same element.Such as institute here , term "and/or" includes the arbitrary and all combination of one or more related institute's lists.For describing element or layer Between relationship other words (for example, " ... between " and " between directly existing ... ", " neighbouring " and " being directly adjacent to ", " ... on " and " on directly existing ... ") should explain in a similar manner.
Herein with reference to the sectional view of the schematic diagram of the Utopian embodiment (and intermediate structure) as example embodiment To describe the example embodiment of present inventive concept.In this way, it is contemplated that for example show appearance caused by manufacturing technology and/or tolerance Shape variation.Therefore, the example embodiment of present inventive concept should not be construed as being limited to the spy in region shown here Shape shape, but will be including for example by the deviation in shape caused by manufacturing.For example, the injection zone for being shown as rectangle can be with There is round or bending feature and/or the gradient of implantation concentration at its edge, rather than from injection zone to non-implanted region Binary variation.Equally, can be caused on buried region and surface through which implantation occurs by injecting the buried region formed Between region in there is a degree of injection.Thus, region shown in the accompanying drawings is substantially schematical, their shape Shape is not intended to show the actual shape in the region of device, is also not intended to limit the range of example embodiment.
As entity is understood through the invention, according to the side of the device of various embodiments described and formation device Method can be realized with the microelectronic component of such as integrated circuit, wherein according to multiple devices of various embodiments described Part is integrated in same microelectronic device.Therefore, sectional view shown here can be orthogonal along not needing in microelectronic component Two different directions repeat.Therefore, it is embodied as the microelectronic component of the device according to various embodiments described Plan view may include the function based on microelectronic component be in array and/or multiple devices in two-dimensional pattern.
It can be inserted in other devices according to the function of microelectronic component according to the device of various embodiments described Among.In addition, can be along can be from described two different directions according to the microelectronic component of various embodiments described Orthogonal third direction repeats, to provide three dimensional integrated circuits.
Therefore, sectional view shown here to according to various embodiments described in the plan view along two differences Direction and/or provide support along multiple devices that three different directions extend in the perspective.For example, such as by device/ Shown by the plan view of structure, when showing single active region in the sectional view in device/structure, device/structure can be with Including multiple active regions and on active region transistor arrangement (or memory cell structure in appropriate circumstances, Gate structure etc.).
Fig. 1 shows the electromigration effect in the programming technique of one embodiment of electric fuse structure.Fig. 2 shows show The diagram of thermophoresis effect in the programming technique of one embodiment of electric fuse structure.
Referring to Figures 1 and 2, electric fuse structure includes fuse-link (fuse link) FL for making cathode CP be connect with anode A P. Technique to the programming of this electric fuse structure may include forming voltage difference between cathode CP and anode A P, thus to fuse-link FL provides program current.
For example, during the programming technique of electric fuse structure, negative voltage can be applied to cathode CP, can be applied to anode AP Add positive voltage.Therefore, electronics is flowed by fuse-link FL from cathode CP towards anode A P.When electronics is flowed by fuse-link FL When, electronics can be with the atomic collision of fuse-link FL, the phenomenon that leading to referred to as electromigration EM.As shown in fig. 1, in fuse-link FL In the driving force caused by electromigration (for example, electrical drive power, FEM) can be completely constant, and unrelated with position.
When program current is provided to the fuse-link FL formed by metal material (for example, tungsten, aluminium or copper), fuse-link FL Temperature can increase because of Joule heating.As shown in Figure 2, Joule heating can generate the non-uniform temperature of fuse-link FL Distribution.For example, the temperature of fuse-link FL can be in central portion highest.This non-uniform Temperature Distribution can be in fuse-link Lead to thermophoresis in FL.For example, the atom of fuse-link FL can from central part towards anode A P migration (hereinafter referred to as First thermophoresis TM1) or towards cathode CP migrate (hereinafter referred to as the second thermophoresis TM2).
Fig. 3 shows the thermophoresis effect in the programming technique of the embodiment of electric fuse structure and electromigration effect.In Fig. 3 In, curve A indicates the example for the driving force caused by electromigration that can occur when being programmed to electric fuse structure.Curve B tables Show the driving force caused by thermophoresis that can occur when being programmed to electric fuse structure.Curve C expressions are moved by thermophoresis and electricity The total driving force or resultant force of two driving forces caused by moving.
With reference to Fig. 3, the driving force caused by electromigration is (for example, electrical drive power FEM) can be constant in fuse-link FL , and it is unrelated with position.On the contrary, the driving force caused by non-uniform Temperature Distribution is (for example, thermal driving force FTM) can be along phase Anti- direction applies from the central part of fuse-link FL.
Between anode A P and the central part of fuse-link FL, electromigration EM and the first thermophoresis TM1 can be happened at together On one direction.As a result, the total driving force F applied to fuse-link FLEM+TMCan be based on the sum of electrical drive power and thermal driving force.Phase Instead, between cathode CP and the central part of fuse-link FL, electromigration EM and the second thermophoresis TM2 can be happened at opposite side Upwards.As a result, the total driving force F applied to fuse-link FLEM+TMIt can be the difference based on thermal driving force and electrical drive power.
In fuse-link FL, therefore thermal driving force and electrical drive power can lead to non-uniform atom flow rate or non-zero Flux divergence (flux divergence), as shown in Figure 3.Furthermore it is possible to which original occurs depending on the size of flux divergence The consumption or aggregation of son.For example, if the outflow flux ratio in the specific region of fuse-link FL flows into, flux is big, and atom may It is consumed and forms gap (void).On the contrary, if the inflow flux ratio outflow flux at the specific region of fuse-link FL is big, Then atom can be assembled forms (hillock formation) to establish hillock.Gap can increase the resistance of fuse-link FL, from And electric fuse structure is programmed.
According to above method, flux divergence is bigger in fuse-link FL, and gap forms faster.Hereinafter, it will retouch State the various structures and methods for increasing flux divergence in fuse-link FL.
Fig. 4 A show that the first embodiment of electric fuse structure, Fig. 4 B show hatching I-I' and hatching in Fig. 4 A The diagram of II-II' interceptions.With reference to Fig. 4 A and Fig. 4 B, the first embodiment of electric fuse structure includes the gold being located on underlying bed 10 Belong to layer 20, cover metal layer 20 top surface covering dielectric (capping dielectric) 30 and be positioned over electric Jie Interlayer insulating film 40 in matter 30.Metal layer 20 can form cathode 20c, anode 20a and connection cathode 20c and anode 20a Fuse-link 20f.In addition, electric fuse structure may include the dummy metal plug 50 contacted with a part of fuse-link 20f.
Underlying bed 10 can be insulation film.For example, underlying bed 10 can be in device isolation layer and interlayer insulating film 40 One, wherein device isolation layer can be formed on a semiconductor substrate to limit active region, and interlayer insulating film 40 is formed in To support metal wire on transistor.
Metal layer 20 can be film.In one embodiment, metal layer 20 can be formed by the first metal material.Example Such as, metal layer 20 can be made of at least one of tungsten (W), aluminium (Al), copper (Cu) and copper alloy.The example of copper alloy includes Copper-based material, in the copper-based material with a small amount of or predetermined amount include C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, At least one of Ge, Sr, Pt, Mg, Al and Zr.
Anode 20a, cathode 20c and fuse-link 20f by the deposited metal layer 20 on underlying bed 10 and can make metal layer 20 pattern to be formed.Selectively, anode 20a, cathode 20c and fuse-link 20f can be by including being formed in a insulating layer Groove simultaneously fills the mosaic technology of groove to be formed using metal material.In one embodiment, fuse-link 20f can be along specific Direction extends, and anode 20a may be coupled to the end of fuse-link 20f, and cathode 20c may be coupled to the opposite end of fuse-link 20f Portion.The width of anode 20a and cathode 20c can be bigger than the width of fuse-link 20f.As it is shown in the figures, anode 20a and cathode 20c can be asymmetrically formed.However, in an alternate embodiment of the invention, anode 20a and cathode 20c can be formed asymmetrically.
In one embodiment, fuse-link 20f may include first area R1, second area R2 and third region R3. In the R1 of first area, dummy metal plug 50 is in contact with each other with fuse-link 20f.In second area R2, covering dielectric 30 with it is molten Disconnected body 20f is in contact with each other between anode 20a and dummy metal plug 50.In the R3 of third region, covering dielectric 30 and fusing Body 20f is in contact with each other between cathode 20c and dummy metal plug 50.
Covering dielectric 30 can be between interlayer insulating film 40 and the top surface of fuse-link 20f.Covering dielectric 30 It can be formed by the insulating materials different from underlying bed 10 and interlayer insulating film 40.Covering dielectric 30 can also be for example with uniform Thickness conformally cover the top surface of fuse-link 20f, but this is not essential in all embodiments.Covering dielectric 30 It can be for example by SiO2、SiON、Si3N4, SiCN, SiC or SiCN formed.Interlayer insulating film 40 can by silica, silicon nitride, Silicon oxynitride or low-k materials are formed.
Dummy metal plug 50 can be formed by the technique included the following steps：It is exhausted across covering dielectric 30 and interlayer Edge layer 40 forms illusory contact hole to expose a part of fuse-link 20f, then metal material is utilized to fill illusory contact hole. In one embodiment, dummy metal plug 50 can be formed on the central part of fuse-link 20f, and can be with fuse-link 20f Top surface contact.The lower width of dummy metal plug 50 can be bigger than the upper width of fuse-link 20f, dummy metal plug 50 Upper width can be bigger than the lower width of dummy metal plug 50.
In one embodiment, dummy metal plug 50 may include metal layer 53 and be arranged in metal layer 53 and fuse-link Barrier metal layer 51 between 20f.Barrier metal layer 51 can be set to bottom surface and the side surface of covering metal layer 53. In one embodiment, barrier metal layer 51 can have uniform thickness on the side surface of metal layer 53 and bottom surface.Blocking Metal layer 51 can be by that can prevent the metal material for constituting metal layer 53 to be diffused into interlayer insulating film 40 adjacent thereto Material is formed.
In one embodiment, barrier metal layer 51 can be formed by the second metal material, and the second metal material can be with The first metal material for fuse-link 20f is different, and has the conductivity smaller than the conductivity of the first metal material.It is formed The example of the material of barrier metal layer 51 include in Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN and combination thereof extremely Few one kind.
In one embodiment, metal layer 53 can be by can be different from for the second metal material of barrier metal layer 51 Third metal material formed.Third metal material for metal layer 53 can be with the first metal material for fuse-link 20f Expect identical or different.For example, metal layer 53 can be made of at least one of tungsten (W), aluminium (Al), copper (Cu) and copper alloy. The example of copper alloy includes copper-based material, in the copper-based material with a small amount of or scheduled amount include C, Ag, Co, Ta, In, At least one of Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al and Zr.
Fig. 5 shows the electromigration that can occur in the programming technique of the first embodiment of electric fuse structure.Fig. 6 is shown can With the thermophoresis occurred in the programming technique of the first embodiment of electric fuse structure.Fig. 7 is shown can be in electric fuse structure The thermophoresis and electromigration occurred in the programming technique of first embodiment.
With reference to Fig. 5, the programming technique of electric fuse structure can be executed using program current.Program current can by Voltage difference is formed between cathode 20c and anode 20a to generate.It in one embodiment, can be to cathode during programming technique 20c applies negative voltage, can apply positive voltage to anode 20a, dummy metal plug 50 may be at electrically floating state.Cathode 20c Voltage difference between anode 20a, which generates, makes electronics pass through the programming electricity that fuse-link 20f is flowed from cathode 20c towards anode 20a Stream.
During the electronics flows, electronics can be moved with the atomic collision for constituting fuse-link 20f so as to cause electricity It moves.Electromigration can mainly occur along the surface of metal layer.The driving force caused by electromigration can connect according to fuse-link 20f Tactile material and change.In other words, as described above, fuse-link 20f may include dummy metal plug 50 and fuse-link 20f connects each other Tactile first area R1, covering dielectric 30 and fuse-link 20f be in contact with each other between anode 20a and dummy metal plug 50 The third region that two region R2, covering dielectric 30 and fuse-link 20f are in contact with each other between cathode 20c and dummy metal plug 50 R3。
The driving force caused by electromigration is between first area R1 and second area R2 and in first area R1 and third It will be different between the R3 of region.For example, second area R2 and third region R3 that metal layer is in contact with each other with covering dielectric On the first electrical drive power EM1 can be than the second electrical drive power EM2 on first area R1 that different metal materials is in contact with each other It is small.
With reference to Fig. 6, can occur Joule heat when being programmed to electric fuse structure.Joule heat can generate fuse-link 20f's The temperature of non-zero gradient.In one embodiment, the maximum amount of Joule heat can occur in the central portion of fuse-link 20f. However, the portion that can be in contact with each other by dummy metal plug 50 and fuse-link 20f due to sizable part of such heat Divide and consume, therefore the temperature of first area R1 can reduce.For example, the physics between dummy metal plug 50 and fuse-link 20f Contact can lead to the change of the temperature gradient of fuse-link 20f.For example, during programming, due to the presence of dummy metal plug 50, The temperature of fuse-link 20f can be maximum at two individual parts.For example, the temperature of fuse-link 20f can be located at There is maximum value in second area R2 and third region R3 on the side of dummy metal plug 50.
In the figure 7, curve A shows the driving force caused by electromigration that can occur when being programmed to electric fuse structure. Curve B shows the driving force caused by thermophoresis that can occur when being programmed to electric fuse structure.Curve C is shown by thermophoresis With the total driving force or resultant force of two driving forces caused by electromigration.
In one embodiment, due to the presence of dummy metal plug 50, the temperature of fuse-link 20f can be at two individually It is maximum at part.As a result, the temperature of the part for being located at 50 lower section of dummy metal plug of fuse-link 20f can be than fuse-link 20f's The temperature of other parts is low.In addition, due to the presence of dummy metal plug 50, can reduce fuse-link 20f is located at dummy metal Electrical drive power in the part of 50 lower section of plug.
Total driving force can drastically change in the first area R1 of fuse-link 20f or nearby.For example, total driving force FEM+TM Change rate can be bigger than in the electric fuse structure with reference to Fig. 3 descriptions in the electric fuse structure with dummy metal plug 50. For example, since flux divergence increases at the first area R1 contacted with dummy metal plug 50, it can be under identical conditions (for example, under same voltage) quickly programs electric fuse structure.This makes it possible under the program voltage of reduction to electric smelting Silk structure is programmed.
As shown in FIG. 7, total driving force FEM+TMIt can be adjacent with anode 20a in fuse-link 20f and in illusory gold Belonging to has maximum value at the part of the side of plug 50.It, can be in fuse-link 20f and void since outflow flux increases suddenly If occurring consumption (depletion) or gap at the adjacent second area R2 of metal closures 50.Therefore, after programming technique, electricity Fuse-wires structure can have gap V between anode 20a and dummy metal plug 50.Between gap V and dummy metal plug 50 away from From can be smaller than the distance between gap V and anode 20a.
Fig. 8 A to Fig. 8 C show the modification of the first embodiment of electric fuse structure.With reference to Fig. 8 A to Fig. 8 C, such as with reference to Fig. 4 B Described, electric fuse structure includes cathode 20c, anode 20a, fuse-link 20f and dummy metal plug 50.Fuse-link 20f includes First area R1, the covering dielectric 30 and fuse-link 20f that dummy metal plug 50 and fuse-link 20f is in contact with each other are in anode 20a Second area R2, the covering dielectric 30 and fuse-link 20f being in contact with each other between dummy metal plug 50 are in cathode 20c and illusory The third region R3 being in contact with each other between metal closures 50.
With reference to Fig. 8 A to Fig. 8 C, dummy metal plug 50 may include barrier metal layer 51 and metal layer as described above 53, and can have the bottom surface lower than the top surface of fuse-link 20f.The bottom surface of dummy metal plug 50 can be with underlying bed 10 top surface separates.In other words, thickness of the fuse-link 20f on the R1 of first area can be than in second area R2 and third area Thickness on the R3 of domain is small.In addition, as shown in fig. 8 a and fig. 8b, dummy metal plug 50 can have the top than fuse-link 20f The small lower width of width.In one embodiment, as shown in figure 8B, barrier metal layer 51 is on the bottom surface of metal layer 53 Thickness can be bigger than the thickness on the side surface of metal layer 53.
In one embodiment as shown in Fig. 8 C, dummy metal plug 50 can have the lower angle of circle.In addition, illusory The lower width of metal closures 50 can be bigger than the upper width of fuse-link 20f.Therefore, dummy metal plug 50 can cover fuse-link A part and top surface for the side surface of 20f.In other words, barrier insulating layer 51 can be with the top surface and side table of fuse-link 20f Face is in direct contact.
Fig. 9 A and Figure 10 A show that the second embodiment of electric fuse structure, Fig. 9 B and Figure 10 B are shown respectively along Fig. 9 A and figure The diagram of hatching I-I' and hatching II-II' interceptions in 10A, Fig. 9 C and Figure 10 C show that the second of electric fuse structure implements The modification of example.
In a second embodiment, electric fuse structure includes at least one layer of dummy metal pattern for being connected to fuse-link 20f 80 and dummy metal plug 50.The volume of dummy metal pattern 80 can be adjusted to control the fusing performance of electric fuse structure.
With reference to Fig. 9 A, Fig. 9 B, Figure 10 A and Figure 10 B, the second embodiment of electric fuse structure includes being located on underlying bed 10 Metal layer 20, cover metal layer 20 top surface covering dielectric 30 and the interlayer insulating film that is positioned on dielectric 30 40.Metal layer 20 can form cathode 20c, anode 20a and connect the fuse-link 20f of cathode 20c and anode 20a.In addition, electric smelting Silk structure may include the dummy metal plug 50 and dummy metal pattern 80 for the part for being connected to fuse-link 20f.First contact Plug 60a and the first conductive pattern 90a may be coupled to anode 20a.Second contact plug 60b and the second conductive pattern 90b can connect It is connected to cathode 20c.
In one embodiment, fuse-link 20f can extend along specific direction, and anode 20a may be coupled to fuse-link The end of 20f, cathode 20c may be coupled to the opposed end of fuse-link 20f.The width of anode 20a and cathode 20c can be than molten The width of disconnected body 20f is big.In one embodiment, metal layer 20 can be formed by the first metal material.For example, metal layer 20 can To be made of at least one of tungsten (W), aluminium (Al), copper (Cu) and copper alloy.The example of copper alloy includes with a small amount of or predetermined Amount include the copper-based of at least one of C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al and Zr Material.
Covering dielectric 30 and the first interlayer insulating film 40 can be sequentially formed at and be provided with anode 20a, cathode On the underlying bed 10 of 20c and fuse-link 20f.Covering dielectric 30 can be by different from underlying bed 10 and the first interlayer insulating film 40 Insulating materials formed.Covering dielectric can conformally cover the top surface of fuse-link 20f, and can be for example by SiO2、 SiON、Si3N4, SiC or SiCN formed.
The formation of dummy metal plug 50 may include the void to be formed through covering dielectric 30 and the first interlayer insulating film 40 If a part for contact hole and exposure fuse-link 20f.Then metal material can be utilized to fill illusory contact hole.First contact plug The formation of 60a may include being formed through the first contact hole of covering dielectric 30 and the first interlayer insulating film 40 and exposure anode Then a part of 20a utilizes metal material to fill the first contact hole.
The formation of second contact plug 60 may include to be formed through covering dielectric 30 and the first interlayer insulating film 40 A part for two contact holes and exposure cathode 20c, then utilizes metal material to fill the second contact hole.In one embodiment, Dummy metal plug 50 can be simultaneously formed with the first contact plug 60a and the second contact plug 60b.In addition, dummy metal plug 50 can To include and the identical metal material of at least one of the first contact plug 60a and the second contact plug 60b.
In one embodiment, each of dummy metal plug 50, the first contact plug 60a and second contact plug 60b can be with Including the first barrier metal layer 51 and the first metal layer 53.First barrier metal layer 51 can be formed as in the side of illusory contact hole There is uniform thickness on surface and bottom surface.In one embodiment, the first barrier metal layer 51 can by can with for The second metal material that the first metal material of fuse-link 20f is different is formed, and the first barrier metal layer 51 can have than first The small conductivity of the conductivity of metal material.For example, the first barrier metal layer 51 can by Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN or combination thereof are formed.
The first metal layer 53 can by can be different from the second metal material for the first barrier metal layer 51 third Metal material is formed.Third metal material for the first metal layer 53 can be with the first metal material for fuse-link 20f It is identical or different.For example, the first metal layer 53 can be made by least one of tungsten (W), aluminium (Al), copper (Cu) and copper alloy At.The example of copper alloy include with a small amount of or scheduled amount include C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, The copper-based material of at least one of Pt, Mg, Al and Zr.
Second interlayer insulating film 70, which can be formed in, is provided with dummy metal plug 50, the contacts of the first contact plug 60a and second On the first interlayer insulating film 40 for filling in 60b.First conductive pattern 90a, the second conductive pattern 90b and dummy metal pattern 80 can be with It is formed in the second interlayer insulating film 70.Dummy metal pattern 80 may be coupled to dummy metal plug 50.First conductive pattern 90a It can be connected respectively to the first contact plug 60a and the second contact plug 60b with the second conductive pattern 90b.
Dummy metal pattern 80 may include second metal layer 83 and be arranged in second metal layer 83 and dummy metal plug The second barrier metal layer 81 between 50.The formation of dummy metal pattern 80 may include being formed in the second interlayer insulating film 70 Groove to expose the top surface of dummy metal plug 50, be then sequentially formed the second barrier metal layer 81 and second metal layer 83 with Fill groove.Second barrier metal layer 81 can be for example by Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN or combination thereof It is formed.
Second metal layer 83 can be by the gold different from the metal material of the first metal layer 51 of dummy metal plug 50 is constituted Belong to material to be formed.First conductive pattern 90a and the second conductive pattern 90b can be simultaneously formed with dummy metal pattern 80.Example Such as, the first conductive pattern 90a and the second conductive pattern 90b can be formed by metal material identical with dummy metal pattern 80.
According to the embodiment in Fig. 9 A and Fig. 9 B, width W1 that the width W2 of dummy metal plug 50 can be than fuse-link 20f It is small.The width W3 of dummy metal pattern 80 can be than fuse-link 20f width W1 it is big.In addition, dummy metal pattern 80 can have First thickness t2 small thickness t1 than fuse-link 20f.
According to the embodiment in Figure 10 A and Figure 10 B, width that the width W2 of dummy metal plug 50 can be than fuse-link 20f W1 is small.The width W3 of dummy metal pattern 80 can be than fuse-link 20f width W1 it is big.In addition, dummy metal pattern 80 can have The second thickness t3 for having the thickness t1 than fuse-link 20f big.
According to second embodiment, the volume of the dummy metal pattern 80 in Fig. 9 A and Fig. 9 B can in Figure 10 A and Figure 10 B Dummy metal pattern 80 volume it is different.For example, the volume of the dummy metal pattern 80 in Fig. 9 A and Fig. 9 B can be less than figure The volume of dummy metal pattern 80 in 10A and Figure 10 B.
According to the embodiment in Fig. 9 C and Figure 10 C, electric fuse structure may include be located at underlying bed 10 on metal layer 20, The covering dielectric 30 for covering the top surface of metal layer 20, the first interlayer insulating film 40 and second being positioned on dielectric 30 Interlayer insulating film 70.Metal layer 20 can form cathode 20c, anode 20a and connect the fuse-link of cathode 20c and anode 20a 20f.In one embodiment, the width of anode 20a and cathode 20c can be bigger than the width of fuse-link 20f.Metal layer 20 can be with It is formed by such as the first metal material (for example, at least one of tungsten (W), aluminium (Al), copper (Cu) and copper alloy).Copper alloy Example include with a small amount of or scheduled amount include C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al and The copper-based material of at least one of Zr.
According to this embodiment, electric fuse structure may include the dummy metal plug contacted with a part of fuse-link 20f 50.Dummy metal plug 50 may include barrier metal layer 51, contact portion 53a and interconnecting parts 53b.Barrier metal layer 51 can be with By the metal material for constituting contact portion 53a and interconnecting parts 53b can be prevented to be diffused into the first adjacent interlayer insulating film 40 It is formed with the conductive material in the second interlayer insulating film 70.Barrier metal layer 51 can be by different from the first metal material and lead Electric rate second metal material smaller than the conductivity of the first metal material is formed.For example, barrier metal layer 51 can for example by Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN or combination thereof are formed.
In one embodiment, contact portion 53a can be connected to fuse-link 20f across the first interlayer insulating film 40.Mutually Even part 53b can be arranged in the second interlayer insulating film 70 and may be coupled to contact portion 53a.Interconnecting parts 53b's Width can be more than the width of contact portion 53a.Contact portion 53a and interconnecting parts 53b can by with the second metal material not Same third metal material is formed.For example, contact portion 53a and interconnecting parts 53b can by tungsten (W), aluminium (Al), copper (Cu) or Copper alloy is made.The example of copper alloy include with a small amount of or scheduled amount include C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, The copper-based material of at least one of Cr, Ge, Sr, Pt, Mg, Al and Zr.
In one embodiment shown in Fig. 9 C, the lower width W2 of dummy metal plug 50 can be than fuse-link 20f's Width W1 is small.The upper width W3 of dummy metal plug 50 can be than fuse-link 20f width W1 it is big.In addition, in dummy metal plug In 50, interconnecting parts 53b can be with first thickness t2 small the thickness t1 than fuse-link 20f.
Selectively, as shown in figure 10 c, the lower width W2 of dummy metal plug 50 can be less than the width of fuse-link 20f Spend W1.The upper width W3 of dummy metal plug 50 can be more than the width W1 of fuse-link 20f.In addition, dummy metal plug 50 is mutual Even part 53b can have the second thickness t3 of the thickness t1 more than fuse-link 20f.For example, the dummy metal plug 50 in Fig. 9 C Interconnecting parts 53b volume can be less than Figure 10 C in dummy metal plug 50 interconnecting parts 53b volume.
The formation of dummy metal plug 50 may include being sequentially formed the first interlayer insulating film 40 and the second interlayer insulating film 70, it is formed across the through-hole of the first interlayer insulating film 40 and the second interlayer insulating film 70, the second interlayer insulating film 70 is made to pattern It is connected to the groove of through-hole with formation and is sequentially formed barrier metal layer and metal layer in through-hole and groove.In a reality It applies in example, the first connecting pattern 65a and the second connecting pattern 65b can be formed during forming dummy metal plug 50.The One connecting pattern 65a may be coupled to anode 20a, the second connecting pattern 65b and may be coupled to cathode 20c.
Similar to dummy metal plug 50, each of the first connecting pattern 65a and the second connecting pattern 65b may include passing through The barrier metal layer of the bottom surface and side surface of logical part, interconnecting parts and covering interconnecting parts.
Figure 11 A and Figure 12 A show how thermophoresis depends in the programming technique of the second embodiment of electric fuse structure The example of the volume of dummy metal pattern.
According to second embodiment, during programming, negative voltage can be applied to cathode 20c, can be applied just to anode 20a Voltage, dummy metal plug 50 may be at electrically floating state.Due to the voltage difference and therewith between cathode 20c and anode 20a The program current of generation, therefore electronics is flowed by fuse-link 20f from cathode 20c towards anode 20a.
It according to second embodiment,, can be by adjusting dummy metal plug during programming as shown in Figure 11 A and Figure 12 A 50 volume controls the temperature gradient of fuse-link 20f.In Figure 11 A, the interconnecting parts 53b of dummy metal plug 50 can have The first thickness t2 of thickness t1 less than fuse-link 20f.In fig. 12, the interconnecting parts 53b of dummy metal plug 50 can have The second thickness t3 of thickness t1 more than fuse-link 20f.For example, the body of the interconnecting parts 53b of dummy metal plug 50 in Figure 12 A Product can be more than the volume of the interconnecting parts 53b of dummy metal plug 50 shown in Figure 11 A.
Increase with the volume of dummy metal plug 50, the first area R1 of fuse-link 20f can be cooled more effectively.Example Such as, compared with neighbouring region, the temperature of the first area R1 of fuse-link 20f can be reduced more effectively.Electricity in fig. 12 The reduction of the temperature of first area R1 in fuse-wires structure can be than the first area R1's in the electric fuse structure in Figure 11 A The reduction of temperature is big.As a result, the unevenness of the Temperature Distribution of fuse-link 20f in the electric fuse structure of Figure 12 A can compare The unevenness of the Temperature Distribution of fuse-link 20f in the electric fuse structure of Figure 11 A is high.
Figure 11 B and Figure 12 B show the thermophoresis and electromigration in the programming technique of the second embodiment of electric fuse structure Effect.In Figure 11 B and Figure 12 B, curve A indicates that can be occurred when being programmed to electric fuse structure drives caused by electromigration Power.Curve B indicates the driving force caused by thermophoresis that can occur when being programmed to electric fuse structure.In Figure 11 B and figure In 12B, curve C indicates the total driving force or resultant force of two driving forces caused by thermophoresis and electromigration.
1B referring to Fig.1, in the first area R1 of fuse-link 20f, the difference Δ F of electrical drive powerEMThermal driving force can be more than Difference Δ FTM.For example, total driving force in the first area R1 of fuse-link 20f can depend primarily on the difference Δ of electrical drive power FEM。
2B referring to Fig.1, in the first area R1 of fuse-link 20f, the difference Δ F of thermal driving forceTMElectrical drive power can be more than Difference Δ FEM.For example, total driving force in the first area R1 of fuse-link 20f can depend primarily on the difference Δ of thermal driving force FTM。
According to the present embodiment, thermal driving force is stronger, then total driving force is stronger in the first area R1 of fuse-link 20f.This It can quickly to program electric fuse structure under given voltage conditions, or reduce to needed for electric fuse structure programming The voltage wanted.
Figure 13 A and Figure 14 A show the 3rd embodiment of electric fuse structure, Figure 13 B and Figure 14 B be shown respectively along Figure 13 A and The diagram of hatching I-I' and hatching II-II' interceptions in Figure 14 A.
3A, Figure 13 B, Figure 14 A and Figure 14 B referring to Fig.1, electric fuse structure include be located at underlying bed 10 on metal layer 20, The interlayer insulating film 40 for covering the covering dielectric 30 of the top surface of metal layer 20 and being positioned on dielectric 30.At one In embodiment, metal layer 20 can be formed by the first metal material, and may be constructed cathode 20c, anode 20a and connection cathode The fuse-link 20f of 20c and anode 20a.In addition, electric fuse structure may include with fuse-link 20f a part contact it is illusory Metal closures 50 and the dummy metal pattern 80 being arranged on dummy metal plug 50.First contact plug 60a and the first conductive pattern 90a It may be coupled to anode 20a, the second contact plug 60b and the second conductive pattern 90b and may be coupled to cathode 20c.
It is similar to the dummy metal plug 50 shown in Fig. 9 C and Figure 10 C, dummy metal plug 50 and dummy metal pattern 80 It can be formed simultaneously using mosaic technology.For example, barrier metal layer 81 can be not formed in the metal layer 53 of dummy metal plug 50 Between the metal layer 83 of dummy metal pattern 80.
According to third embodiment, thus it is possible to vary the contact area between dummy metal plug 50 and fuse-link 20f is in electric smelting The temperature gradient of fuse-link is controlled in the programming technique of silk structure.For example, as shown in Figure 13 A and Figure 13 B, dummy metal plug 50 There can be the first lower width W2 of the upper width W1 less than fuse-link 20f.The lower width of dummy metal pattern 80 can With the upper width W1 more than fuse-link 20f.Selectively, as shown in Figure 14 A and Figure 14 B, dummy metal plug 50 can have There is the second lower width W3 of the upper width W1 more than fuse-link 20f.The lower width of dummy metal pattern 80 can be more than The upper width W1 of fuse-link 20f.According to third embodiment, the temperature gradient of fuse-link 20f can scheme in programming technique Electric fuse structure in 13A and Figure 13 B and between the electric fuse structure in Figure 14 A and Figure 14 B it is different.
Figure 15 A show that the fourth embodiment of electric fuse structure, Figure 15 B show hatching I-I' and section in Figure 15 A The diagram of line II-II' interceptions.5A and Figure 15 B referring to Fig.1, electric fuse structure may include the metal layer being located on underlying bed 10 20, the covering dielectric 30 of the top surface of covering metal layer 20 and the interlayer insulating film 40 being positioned on dielectric 30.Gold Belong to layer 20 to can be used for being formed cathode 20c, anode 20a and connect the fuse-link 20f of cathode 20c and anode 20a.
In addition, electric fuse structure may include the dummy metal plug 50 contacted with a part of fuse-link 20f and be located at empty If the dummy metal pattern 80 on metal closures 50.First contact plug 60a and the first conductive pattern 90a may be coupled to anode 20a, Second contact plug 60b and the second conductive pattern 90b may be coupled to cathode 20c.With the dummy metal plug 50 in Fig. 9 C and Figure 10 C It is similar, dummy metal plug 50 and dummy metal pattern 80 can be formed simultaneously.For example, barrier metal layer 81 can be not formed in void If between the metal layer 53 of metal closures 50 and the metal layer 83 of dummy metal pattern 80.
In the present embodiment, dummy metal plug 50 and dummy metal pattern can be changed relative to anode 20a and cathode 20c 80 position.For example, in Figure 15 A, the distance between dummy metal plug 50 and anode 20a can be more than 50 He of dummy metal plug The distance between cathode 20c.The position of dummy metal plug 50 can be changed so that control will be in the programming technique of electric fuse structure The position in the gap of formation.
Figure 16 A show that the 5th embodiment of electric fuse structure, Figure 16 B show hatching I-I' and section in Figure 16 A The diagram of line II-II' interceptions.6A and Figure 16 B referring to Fig.1, electric fuse structure may include the metal layer being located on underlying bed 10 20, the covering dielectric 30 of the top surface of covering metal layer 20 and the interlayer insulating film 40 being positioned on dielectric 30. In one embodiment, metal layer 20 can be formed by the first metal material, and can form cathode 20c, anode 20a and connection The fuse-link 20f of cathode 20c and anode 20a.
Electric fuse structure can also include the first dummy metal plug 50a and second contacted with a part of fuse-link 20f Dummy metal plug 50b.It is illusory that first dummy metal pattern 80a and the second dummy metal pattern 80b can be separately positioned on first On metal closures 50a and the second dummy metal plug 50b.First dummy metal plug 50a and the second dummy metal plug 50b can be located at sun Between pole 20a and cathode 20c, and it can be separated from each other.In first dummy metal plug 50a and the second dummy metal plug 50b Each may include barrier metal layer 51 and metal layer 53.Barrier metal layer 51 can be by different from the first metal material and lead Electric rate second metal material smaller than the conductivity of the first metal material is formed.First contact plug 60a and the first conductive pattern 90a It may be coupled to anode 20a.Second contact plug 60b and the second conductive pattern 90b may be coupled to cathode 20c.
In other embodiments, similar to the dummy metal plug 50 in Fig. 9 C and Figure 10 C, it is illusory that first can be formed simultaneously Metal closures 50a and the first dummy metal pattern 80a.Similarly, it is illusory that the second dummy metal plug 50b and second can be formed simultaneously Metal pattern 80b.
Figure 17 A show that the sixth embodiment of electric fuse structure, Figure 17 B show hatching I-I' and section in Figure 17 A The diagram of line II-II' interceptions.7A and Figure 17 B referring to Fig.1, electric fuse structure may include the metal layer being located on underlying bed 10 20, the covering dielectric 30 of the top surface of covering metal layer 20 and the interlayer insulating film 40 being positioned on dielectric 30.Gold Cathode 20c, anode 20a, the fuse-link 20f of connection cathode 20c and anode 20a and setting can be formed in fuse-link by belonging to layer 20 The illusory fuse-link 20d of the respective side of 20f.Illusory fuse-link 20d can have such as essentially identical line with fuse-link 20f Width, and fuse-link 20f can be parallel to and extended.Illusory fuse-link 20d can be with anode 20a, cathode 20c and fuse-link 20f is separated.
Electric fuse structure may include a part of dummy metal plug 50 contacted with fuse-link 20f and be located at dummy metal Dummy metal pattern 80 on plug 50.The width of dummy metal pattern 80 can be less than and 80 adjacent pair of dummy metal pattern Space D between illusory fuse-link 20d.It is similar to the dummy metal plug 50 in Fig. 9 C and Figure 10 C, illusory gold can be formed simultaneously Belong to plug 50 and dummy metal pattern 80.For example, barrier metal layer 81 can be not formed in 53 He of metal layer of dummy metal plug 50 Between the metal layer 83 of dummy metal pattern 80.
Figure 18 A show that the 7th embodiment of electric fuse structure, Figure 18 B show that line I-I' and line II-II' along Figure 18 A are cut The sectional view taken.7th embodiment of electric fuse structure includes the metal layer 20 being formed in underlying bed 10, covering metal layer 20 Top surface covering dielectric 30 and the interlayer insulating film 40 that is positioned on dielectric 30.Metal layer 20 can for example by First metal material is formed, and be may be constructed cathode 20c, anode 20a and connected the fuse-link of cathode 20c and anode 20a 20f。
In addition, electric fuse structure may include the dummy metal plug 50 contacted with a part of fuse-link 20f and be located at empty If the dummy metal pattern 80 on metal closures 50.Dummy metal plug 50 can the longitudinal axis of fuse-link 20f along a direction substantially perpendicular Direction extends.As described above, dummy metal plug 50 may include barrier metal layer 51 and metal layer 53.Barrier metal layer 51 can be with It is formed by second metal material different from the first metal material, metal layer 53 can be by the third different from the second metal material Metal material is formed.
In addition, the first contact plug 60a and the first conductive pattern 90a may be coupled to anode 20a.Second contact plug 60b and Second conductive pattern 90b may be coupled to cathode 20c.In the present embodiment, the first contact plug 60a and the second contact plug 60b can To be parallel to the extension of dummy metal plug 60.
In addition, in the present embodiment, the first conductive pattern 90a and the second conductive pattern 90b can by following techniques come It is formed, that is, on the first interlayer insulating film 40 for being provided with the first contact plug 60a, the second contact plug 60b and dummy metal plug 50 The second interlayer insulating film 70 is formed, forms through-hole 71 and groove 73 in the second interlayer insulating film 70, and in through-hole 71 and ditch The second barrier metal layer and second metal layer are sequentially formed in slot 73.It can for example be covered using the second interlayer insulating film 70 The top surface of dummy metal plug 50.
Figure 19 shows the modification of the 7th embodiment of electric fuse structure.Referring to Fig.1 9, electric fuse structure may include being located at Metal layer 20 in underlying bed 10, cover metal layer 20 top surface covering dielectric 30 and be positioned on dielectric 30 Interlayer insulating film 40.Metal layer 20 can be formed for example by the first metal material, and may be constructed cathode 20c, anode 20a And the fuse-link 20f of connection cathode 20c and anode 20a.The width of anode 20a and cathode 20c can be more than fuse-link 20f's Width.Electric fuse structure can also include a part of dummy metal plug 50 contacted with fuse-link 20f and be located at dummy metal Dummy metal pattern 80 on plug 50.
In the present embodiment, multiple first contact plug 60a may be coupled to anode 20a.First conductive pattern 90a can be total to It is same to be connected to multiple first contact plug 60a.Similarly, multiple second contact plug 60b may be coupled to cathode 20c, and second is conductive Pattern 90b can be commonly connected to multiple second contact plug 60b.
Figure 20 A, Figure 20 B, Figure 21 A and Figure 21 B show the other modification of the 7th embodiment of electric fuse structure.With reference to figure 20A, Figure 20 B, Figure 21 A and Figure 21 B, this electric fuse structure may include anode 20a, cathode 20c and connection cathode 20c with The fuse-link 20f of anode 20a.Anode 20a, cathode 20c and fuse-link 20f can have essentially identical uniform line width Degree.
In addition, electric fuse structure may include the dummy metal plug 50 contacted with a part of fuse-link 20f.Dummy metal Plug 50 can along a direction substantially perpendicular the longitudinal axis of fuse-link 20f direction extend.Dummy metal plug 50 may include barrier metal Layer 51 and metal layer 53.Barrier metal layer 51 can be formed by the second metal material different from the first metal material, metal layer 53 can be formed by the third metal material different from the second metal material.
Embodiment in 0A and Figure 20 B according to fig. 2, multiple first contact plug 60a may be coupled to the top table of anode 20a Face, multiple second contact plug 60b may be coupled to the top surface of cathode 20c.In first contact plug 60a and the second contact plug 60b Each of can have such as strip, wherein longitudinal axis of the longitudinal axis of the strip perpendicular to fuse-link 20f.First Contact plug 60a and the second contact plug 60b can be formed by material identical with dummy metal plug 50.
First conductive pattern 90a can be commonly connected to the first contact plug 60a.Second conductive pattern 90b can connect jointly It is connected to the second contact plug 60b.First conductive pattern 90a can be by forming 71 He of multiple through-holes in the second interlayer insulating film 70 It is connected to the groove 73 of through-hole 71, then barrier metal layer is sequentially formed in through-hole 71 and groove 73 and metal layer carrys out shape At.Through-hole 71 can be formed on each first contact plug 60a, and can be in first direction and second direction intersected with each other On be separated from each other.Second conductive pattern 90b can be formed in a manner of identical with the first conductive pattern 90a.
Embodiment in 1A and Figure 21 B according to fig. 2, multiple first contact plug 60a may be coupled to anode 20a, Duo Ge Two contact plug 60b may be coupled to cathode 20c.First conductive pattern 90a can be commonly connected to multiple first contact plug 60a. Second conductive pattern 90b can be commonly connected to multiple second contact plug 60b.In the present embodiment, the first contact plug 60a and Two contact plug 60b may be substantially parallel to dummy metal plug 50.For example, the first contact plug 60a and the second contact plug 60b can edges The direction of longitudinal axis basically perpendicular to fuse-link 20f extends.
First conductive pattern 90a and the second conductive pattern 90b can be multiple by being formed in the second interlayer insulating film 70 Through-hole 71 and the groove 73 for being connected to through-hole 71, are then sequentially formed barrier metal layer and metal in through-hole 71 and groove 73 Layer is formed.Through-hole 71 for the first conductive pattern 90a can be formed as exposure the first contact plug 60a adjacent to each other.With It can be formed as exposure the second contact plug 60b adjacent to each other in the through-hole 71 of the second conductive pattern 90b.
Figure 22 and Figure 23 shows the 8th embodiment of electric fuse structure, wherein electric fuse structure include anode pattern 110a, Cathode pattern 110b, fuse-link 130, jointed anode pattern 110a and the first contact plug 125a of fuse-link 130, it connect cathode figure The dummy metal plug 150 that case 110b is contacted with the second contact plug 125b of fuse-link 130 and with a part for fuse-link 130. In this embodiment, fuse-link 130 can be located at the horizontal plane different from anode pattern 110a and cathode pattern 110b.
Anode pattern 110a and cathode pattern 110b can be for example formed in by mosaic technology in underlying bed 100, and It can be separated from each other.First contact plug 125a can be connected to anode pattern 110a across the first interlayer insulating film 120.Second connects Cathode pattern 110b can be connected to across the first interlayer insulating film 120 by touching plug 125b.
Fuse-link 130 can make it is metal layer patterning made of the first metal material formed, and can set It sets on the first interlayer insulating film 120.Fuse-link 130 can both be connected to the first contact plug 125a and be connected to the second contact plug 125b.Second interlayer insulating film 140, which can be located at, to be provided on the first interlayer insulating film 120 of fuse-link 130.Covering dielectric 135 can be arranged between the second interlayer insulating film 140 and fuse-link 130.
Dummy metal plug 150 can run through the second interlayer insulating film 140 and covering dielectric 135, and can contact molten A part for disconnected body 130.Dummy metal plug 150 may include barrier metal layer 151 and metal layer 153.Barrier metal layer 151 can To be formed by second metal material different from the first metal material of fuse-link 130 is constituted.Metal layer 153 can be by with second The different third metal material of metal material is formed.
With reference to Figure 23, anode pattern 110 can be arranged on underlying bed 100, and fuse-link 130 can be relative to underlying bed 100 are arranged at first level face, and cathode pattern 160 can be arranged relative to underlying bed 100 at the second horizontal plane.Second water Plane can be higher than first level face.
It is provided on the underlying bed 100 of anode pattern 110 for example, the first interlayer insulating film 120 can be located at.First contact Plug 125 can be connected to anode pattern 110 across the first interlayer insulating film 120.Fuse-link 130 can be arranged in the first contact plug On 125.Fuse-link 130 can be formed by the first metal material.First contact plug 125 may be coupled to the end of fuse-link 130. Fuse-link 130 can be for example formed in by mosaic technology in the first interlayer insulating film 120.
Covering dielectric 135 and the second interlayer insulating film 140 can be sequentially formed on fuse-link 130.Second contact Plug 155 may be coupled to the other end of fuse-link 130.Dummy metal plug 150 can be arranged in the second interlayer insulating film 140 In the part separated with the second contact plug 155.Dummy metal plug 150 can be formed simultaneously with the second contact plug 155.Dummy metal Each of plug 150 and the second contact plug 155 may include barrier metal layer 151 and metal layer 153.
Barrier metal layer 151 can be formed by the second metal material different from the first metal material.Metal layer 153 can be with It is formed by the third metal material different from the second metal material.In addition, cathode pattern 160 can be arranged in the second layer insulation In layer 140, and it may be coupled to the second contact plug 155.Dummy metal plug 150 may include contact portion and interconnecting parts.
Figure 24 A and Figure 24 B show the 9th embodiment of the electric fuse structure with three-dimensional structure.Electric fuse structure can wrap Include cathode pattern 210, fuse-link 220 and anode pattern 230.Cathode pattern 210 can be located on underlying bed 200, fuse-link 220 It can be located at first level face relative to the top surface of underlying bed 200, anode pattern 230 can be relative to underlying bed 200 Top surface is arranged at the second horizontal plane.Second horizontal plane can be higher than first level face.In addition, illusory fuse-link 220d can be with It is arranged at horizontal plane identical with fuse-link 220.
In this embodiment, in order to effectively collect heat during programming technique, cathode pattern 210 may include edge The first part 210a that first (for example, x-axis) direction the extends and second part 210b extended along second (for example, y-axis) direction. First contact plug 215 can make cathode pattern 210 be connected to fuse-link 220.
Similar to cathode pattern 210, anode pattern 230 may include first extended along first (for example, x-axis) direction The second part 230b for dividing 230a and extending along second (for example, y-axis) direction.Second contact plug 225 can be such that fuse-link 220 connects It is connected to anode pattern 230.In terms of plan view, the first contact plug 215 and the second contact plug 225 can not be stacked on top of each other.
Cathode pattern 210, fuse-link 220 and anode pattern 230 can by include for example tungsten (W), aluminium (Al), copper (Cu) and First metal material of at least one of copper alloy is formed.The example of copper alloy include with a small amount of or scheduled amount include C, The copper-based material of at least one of Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al and Zr.
Electric fuse structure may include dummy metal plug 235 and dummy metal pattern 240.Dummy metal plug 235 can connect Touch a part for anode pattern 230.Embodiment in 4A according to fig. 2, dummy metal plug 235 may be coupled to anode pattern 230 First part 230a, and in terms of plan view dummy metal plug 235 can be arranged to it is adjacent with the second contact plug 225.On the contrary, In Figure 24 B, from the visual angle of plan view, dummy metal plug 235 can be separated with the second contact plug 225.
Dummy metal plug 235 may include barrier metal layer and metal layer.Barrier metal layer can by with for anode figure The second metal material that first metal material of case 230 is different is formed.Metal layer can be by the third different from barrier metal layer Metal material is formed.The conductivity of second metal material can be less than the conductivity of the first metal material.In addition, dummy metal figure Case 240 may be coupled to the top surface of dummy metal plug 235.
The use of three-dimensional electric fuse structure in Figure 24 A and Figure 24 B makes it possible to more effectively receive during programming technique Heat-collecting capacity, so as to improve the performance of programming technique.During programming technique, negative voltage can be applied to cathode pattern 210, it can be with Apply positive voltage to anode pattern 230, dummy metal plug 235 and dummy metal pattern 240 may be at electrically floating state.
Voltage difference between cathode pattern 210 and anode pattern 230 generates program current.As a result, electronics passes through fuse-link 220 flow from cathode pattern 210 towards anode pattern 230.Electron stream can change the anode pattern of 235 lower section of dummy metal plug Electrical drive power at 230 and thermal driving force.Therefore, gap can be formed in the adjacent with dummy metal plug 235 of anode pattern 230 Part at.
Figure 25 A to Figure 25 C show that the embodiment of semiconductor device, each semiconductor device include according in previous embodiment Any one embodiment at least one electric fuse structure.With reference to Figure 25 A to Figure 25 C, semiconductor substrate 300 includes that storage is single First region A and fuse region B.MOS transistor is formed on the memory cell region A of semiconductor substrate 300, electric fuse structure shape At on the fuse region B of semiconductor substrate 300.
Device isolation layer 301 can be formed on semiconductor substrate 300 to limit active region, and gate electrode 310g can be with shape Intersect as with active region, extrinsic region can be formed in the respective side positioned at gate electrode 310g of semiconductor substrate 300 In the part at place.First interlayer insulating film 320 can be located at the semiconductor substrate for being provided with MOS transistor and electric fuse structure On 300.Unit contact plug 321 can be electrically connected to MOS transistor across the first interlayer insulating film 310.
First interconnection line 325 can be arranged on the first interlayer insulating film 320 of memory cell region A.Every first mutually Line 325 may be electrically connected at least one unit contact plug 321.Second interlayer insulating film 330 can be arranged in the first interlayer On insulating layer.Second interconnection line 335 can be arranged in the second interlayer insulating film 330.The line width of second interconnection line 335 can be with More than the line width of the first interconnection line 325.
In addition, third interlayer insulating film 340 can be arranged on the second interlayer insulating film 330.Third interconnection line 345 can be with It is arranged in third interlayer insulating film 340.The line width of third interconnection line 345 can be more than the line width of the second interconnection line 335.
Embodiment in 5A according to fig. 2, fuse-link 310f can be formed on the device isolation layer 301 of fuse region B, be melted The top surface of disconnected body 310f can utilize covering dielectric 315 to cover.Fuse-link 310f can be with the grid electricity of memory cell region A Pole 310g is formed simultaneously, and can be formed by the first metal material.First metal material can be by tungsten (W), aluminium (Al), copper (Cu) it is formed at least one of copper alloy.The example of copper alloy include with a small amount of or scheduled amount include C, Ag, Co, Ta, The copper-based material of at least one of In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al and Zr.
In the B of fuse region, the first contact plug 321a, the second contact plug 321b and dummy metal plug 321d can pass through the Interbedded insulating layer 320 is connected to fuse-link 310f.Dummy metal plug 321d may include barrier metal layer and metal layer.Blocking Metal layer can be formed by the second metal material different from the first metal material.Metal layer can be by third metal material shape At.Dummy metal plug 321d can be formed simultaneously with the unit contact plug 321 of memory cell region A.
First conductive pattern 325a, the second conductive pattern 325b and dummy metal pattern 325d can be arranged in fuse region On the first interlayer insulating film 320 of B.First conductive pattern 325a may be electrically connected to the first contact plug 321a, the second conductive pattern Case 325b may be electrically connected to the second contact plug 321b.Dummy metal pattern 325d can contact the top table of dummy metal plug 321d Face.First conductive pattern 325a, the second conductive pattern 325b and dummy metal pattern 325d can be with the of memory cell region A One interconnection line 325 is formed simultaneously.
Embodiment in 5B according to fig. 2, the electric fuse structure of fuse region B can be with the first of memory cell region A mutually Line 325 is formed simultaneously.The fuse-link 325f of electric fuse structure can be formed on the first interlayer insulating film 320 and can be with The top surface of semiconductor substrate 300 separates.First interconnection line 325 and fuse-link 325f can be formed by the first metal material, be melted The top surface of disconnected body 325f can utilize covering dielectric 327 to cover.
In the B of fuse region, the first contact plug 331a, the second contact plug 331b and dummy metal plug 331d can pass through the Two interlayer insulating films 330 and covering dielectric 327 are connected to fuse-link 310f.Dummy metal plug 331d may include barrier metal Layer and metal layer.Barrier metal layer can be formed by the second metal material different from the first metal material.Metal layer is by third Metal material is formed.
First conductive pattern 335a, the second conductive pattern 335b and dummy metal pattern 335d can be arranged in fuse region On the second interlayer insulating film 330 of B.First conductive pattern 335a may be electrically connected to the first contact plug 331a, the second conductive pattern Case 335b may be electrically connected to the second contact plug 331b.
The electric fuse structure of embodiment in 5C according to fig. 2, fuse region B can be mutual with the third of memory cell region A Line 345 is formed simultaneously.Electric fuse structure may include the fuse-link 345f separated with the top surface of semiconductor substrate 300.The Three interconnection lines 345 and fuse-link 345f can be formed by the first metal material, and the top surface of fuse-link 345f can utilize covering Dielectric 347 covers.
In the B of fuse region, the first contact plug 351a, the second contact plug 351b and dummy metal plug 351d can pass through the Three interlayer insulating films 340 and covering dielectric 347 are connected to fuse-link 345f.Dummy metal plug 351d may include by with first The second different metal material of metal material barrier metal layer formed and the metal layer formed by third metal material.
First conductive pattern 353a, the second conductive pattern 353b and dummy metal pattern 353d can be arranged in fuse region On the third interlayer insulating film 340 of B.First conductive pattern 353a may be electrically connected to the first contact plug 351a, the second conductive pattern Case 353b may be electrically connected to the second contact plug 351b.
Figure 26 shows to include the storage system according to the semiconductor device of any one embodiment in previous embodiment 1100 embodiment.With reference to Figure 26, storage system 1100 can be applied to such as PDA (personal digital assistant), portable computing Machine, web-tablet, radio telephone, mobile phone, digital music player, storage card and/or can be in a wireless communication environment Send and/or receive all devices of data.
Storage system 1100 include controller 1110, input/output device 1120 (for example, keyboard and/or display equipment), Memory 1130, interface 1140 and bus 1150.Memory 1130 and interface 1140 can be communicated with one another by bus 1150.
Controller 1110 may include microprocessor, digital signal processor, microcontroller and/or with microprocessor, number The similar other processing units of word signal processor, microcontroller.Memory 1130 can be used for storing to be held by controller 1110 Capable instruction.Input/output device 1120 can receive data from the outside of system 1100 and/or signal and/or to being The external transmission data and/or signal of system 1100.For example, input/output device 1120 may include keyboard, keypad and/or show Show device.
Memory 1130 may include the semiconductor device according to any one embodiment in previous embodiment.Memory 1130 can also include different types of memory, for example, the volatile storage of such as random access memory and/or its The memory of its type.Interface 1140 can to communication network transmission data and/or can from communication network receive data.
Figure 27 shows to include the storage card 1200 according to the semiconductor device of any one embodiment in previous embodiment Embodiment.With reference to Figure 27, storage card 1200 can have the storage capacity of large capacity or other predetermined volumes and can wrap Include the semiconductor storage 1210 according to any one embodiment in previous embodiment.Storage card 1200 includes that can control The storage control 1220 of data exchange between host and semiconductor storage 1210.
The operation that static RAM (SRAM) 1221 may be used as such as central processing unit (CPU) 1222 is deposited Reservoir.Host interface 1223 may include the data exchange agreement for the host that may be coupled to storage card 1200.Error correction block 1224 can detect and/or correct from the mistake in the data that multi bit semiconductor memory device 1210 is read.
Memory interface 1225 can be connect with 1210 interface of semiconductor storage.Processing unit 1222 can execute use In the control operation for the data for exchanging storage control 1220.Storage card 1200 may include for example for store code, instruction Or the ROM of the other information for being connect with host.
Figure 28 shows to include the information processing system according to the semiconductor device of any one embodiment in previous embodiment The embodiment of system 1300.With reference to Figure 28, information processing system 1300 includes the storage system 1310 for having semiconductor device.
Storage system 1310, which can be installed to for example, to be mobile device and/or the information processing system of desktop PC System.Information processing system 1300 may include the modem 1320 for being electrically connected to system bus 1360, central processing unit (CPU) 1330, RAM 1340 and user interface 1350.Storage system 1310 can be constructed in a similar manner as fig. 20, and And may include semiconductor device (for example, flash memory) 1311 and storage control 1312.
Storage system 1310 can be such as solid state drive SSD, and can store will be handled by CPU 1330 or By the data handled of CPU 1330 and/or from the data of external source import.Information processing system 1300 will can largely count According to or the data of scheduled quantity be stored reliably in storage system 1310.Storage system 1310 can be preserved for wrong school Positive resource, and high-speed data function of exchange can also be provided.In one embodiment, information processing system 1300 can wrap Include application chip group, camera image processor (CIS) and/or input/output device.
According to one or more in previous embodiment, electric fuse structure includes the dummy metal for being attached to fuse-link Plug.Fuse-link can be formed by the first metal material, and dummy metal plug may include the second metal material.Therefore, to electric smelting During silk outline programming technique, the temperature gradient of the driving force caused by electromigration and fuse-link can be controlled, is applied with increasing To total driving force of fuse-link.As a result, can be programmed to electric fuse structure by the operation voltage reduced.
According to one or more in previous embodiment, the volume or contact area for adjusting dummy metal plug can be passed through And/or the quantity of dummy metal plug controls the total driving force for being applied to fuse-link.Furthermore, it is possible to adjust the position of dummy metal plug The position in the gap in the programming technique of electric fuse structure will be formed in control by setting.
There has been disclosed example embodiments, although having used specific term, only with common and retouch The meaning for the property stated rather than use and explain these terms for purposes of limitation.In some cases, as this field is common What technical staff will be clear that, from submitting the application, unless otherwise noted, the spy otherwise described in conjunction with specific embodiments Sign, characteristic and/or element can be used alone or feature, characteristic and/or element group with combination other embodiments description It closes and uses.Therefore, it will be appreciated by those skilled in the art that do not depart from as set forth in the claims the present invention spirit and In the case of range, it can carry out various changes of form and details.

Claims (19)

1. a kind of electric fuse structure of semiconductor device, the electric fuse structure include：
The fuse-link of first metal material connects cathode and anode；
Covering dielectric covers the top surface of fuse-link；And
Dummy metal plug through covering dielectric and contacts fuse-link, dummy metal plug include positioned at metal layer and fuse-link it Between barrier metal layer, wherein barrier metal layer includes second metal material different from the first metal material,
Wherein, the width of fuse-link is substantially equal or smaller than the width of anode and the width of cathode.
2. electric fuse structure as described in claim 1, the electric fuse structure further include：
Dummy metal pattern is located on the top surface of dummy metal plug；And
Illusory fuse-link is located at each side of fuse-link,
Wherein, the thickness of dummy metal pattern is more than the thickness of fuse-link, and the width of dummy metal pattern is less than illusory melt The distance between disconnected body.
3. electric fuse structure as described in claim 1, wherein multiple dummy metal plugs are between anode and cathode.
4. electric fuse structure as described in claim 1, wherein the longitudinal axis of dummy metal plug fuse-link along a direction substantially perpendicular Direction extend.
5. electric fuse structure as described in claim 1, wherein：
Fuse-link by conduction programming electric current, and
In fuse-link conduction programming electric current, dummy metal plug changes the temperature gradient in fuse-link.
6. electric fuse structure as described in claim 5, wherein：
Fuse-link includes the first area contacted with dummy metal plug and the second area that is contacted with covering dielectric, and
In fuse-link conduction programming electric current, the temperature of fuse-link has maximum value at second area.
7. electric fuse structure as described in claim 1, wherein：
Fuse-link includes the first area contacted with dummy metal plug and the second area that is contacted with covering dielectric,
Electric fuse structure by conduction programming electric current, and
During the supply of program current, at the first area of fuse-link the first electrical drive power caused by electromigration with molten The second electrical drive power caused by electromigration is different at the second area of disconnected body.
8. a kind of electric fuse structure of semiconductor device, the electric fuse structure include：
The fuse-link of first metal material connects cathode and anode；
Interlayer insulating film, covering anode, cathode and fuse-link；
Covering dielectric, is located between the top surface and interlayer insulating film of fuse-link, and covering dielectric includes and interlayer insulating film The different insulating materials of insulating materials；And
Dummy metal plug through interlayer insulating film and covering dielectric and contacts fuse-link, and dummy metal plug includes being located at metal Barrier metal layer between layer and fuse-link, wherein barrier metal layer includes second metal material different from the first metal material Material,
Wherein, the bottom surface of barrier metal layer covering metal layer and side surface.
9. electric fuse structure as described in claim 8, wherein：
First metal material includes at least one of tungsten, aluminium, copper and copper alloy, the second metal material include Ta, TaN, At least one of TaSiN, Ti, TiN, TiSiN, W, WN and combination thereof.
10. electric fuse structure as described in claim 8, wherein barrier metal layer on the bottom surface of metal layer ratio in gold Belong to thick on the side surface of layer.
11. electric fuse structure as described in claim 8, wherein：
Fuse-link by conduction programming electric current, and
Under programming state, fuse-link has gap between anode and dummy metal plug.
12. electric fuse structure as described in claim 11, wherein：
The distance between gap and dummy metal plug are less than the distance between gap and anode.
13. a kind of electric fuse structure of semiconductor device, the electric fuse structure include：
Anode is connected to cathode by fuse-link, and will based on programming electric current and be programmed；
Dummy metal plug, contacts with fuse-link,
Wherein, fuse-link includes the first metal material, and dummy metal plug includes second metal material different from the first metal material Material, in fuse-link conduction programming electric current, dummy metal plug changes electrical drive power and thermal driving force, wherein electrical drive power and heat are driven Power is based on electromigration and thermophoresis in fuse-link.
14. electric fuse structure as described in claim 13, wherein：
Dummy metal plug includes the barrier metal layer between metal layer and fuse-link, and
Barrier metal layer includes the second metal material.
15. electric fuse structure as described in claim 13, wherein the conductivity of the first metal material is more than the second metal material The conductivity of material.
16. electric fuse structure as described in claim 13, wherein：
In fuse-link conduction programming electric current, total driving force has maximum value between anode and dummy metal plug, and
Total driving force is based on the sum of electrical drive power and thermal driving force.
17. electric fuse structure as described in claim 13, the electric fuse structure further include：
Interlayer insulating film, covering anode, cathode and fuse-link；And
Covering dielectric, is located between the top surface and interlayer insulating film of fuse-link, and covering dielectric includes and interlayer insulating film The different insulating materials of insulating materials, wherein fuse-link include the first area contacted with dummy metal plug and with covering electricity The second area of media contact.
18. electric fuse structure as described in claim 17, wherein at the first area of fuse-link caused by electromigration First electrical drive power is less than the second electrical drive power caused by electromigration at the second area of fuse-link.
19. electric fuse structure as described in claim 18, wherein in fuse-link conduction programming electric current, the temperature of fuse-link Degree has maximum value at second area.
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