KR20110135501A - Semiconductor device with fuse part - Google Patents

Semiconductor device with fuse part Download PDF

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Publication number
KR20110135501A
KR20110135501A KR1020100055253A KR20100055253A KR20110135501A KR 20110135501 A KR20110135501 A KR 20110135501A KR 1020100055253 A KR1020100055253 A KR 1020100055253A KR 20100055253 A KR20100055253 A KR 20100055253A KR 20110135501 A KR20110135501 A KR 20110135501A
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KR
South Korea
Prior art keywords
fuse
dummy
plug
semiconductor device
interlayer insulating
Prior art date
Application number
KR1020100055253A
Other languages
Korean (ko)
Inventor
이혜림
Original Assignee
주식회사 하이닉스반도체
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Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020100055253A priority Critical patent/KR20110135501A/en
Publication of KR20110135501A publication Critical patent/KR20110135501A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: A semiconductor device equipped with a fuse part is provided to prevent a structure which is adjacent to a fuse to be damaged in a repair process by including a dummy fuse and a dummy plug. CONSTITUTION: A plurality of fuses(23) is formed on an inter-layer insulating film. A dummy fuse(24) is separated with the fuse and is located between the fuses. A dummy plug(25) is connected to the dummy fuse by passing through the inter-layer insulating film. The dummy plug is connected to a ground terminal. The fuse and dummy fuse are composed of a metal wiring which is located on the same level. A protective film covers the fuse and the dummy fuse. The dummy fuse and the dummy plug are a line pattern. A fuse box is formed in the protective film. The length of the dummy fuse is longer than the length of the fuse box.

Description

Semiconductor device with fuse section {SEMICONDUCTOR DEVICE WITH FUSE PART}

TECHNICAL FIELD This invention relates to the manufacturing technique of a semiconductor device. Specifically, It is related with the fuse part of a semiconductor device.

In the manufacture of a semiconductor memory device, if any one of a large number of cells occurs, a defect is treated as a defective product because it fails to function as a memory. However, even though only a few cells in the memory have failed, disposing of the entire device as defective is very inefficient in terms of yield. Accordingly, a yield improvement is achieved by restoring the entire memory by performing a repair process in which a defective cell is replaced by using a redundancy cell previously installed in the memory. For the above-mentioned repair process, the semiconductor memory device includes a fuse part which stores address information of a defective cell according to a connection state of the fuse.

1A and 1B are diagrams illustrating a fuse unit of a semiconductor device according to the related art. FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along the line X-X 'of FIG. 1A.

As shown in FIGS. 1A and 1B, a fuse unit according to the related art includes a substrate 11 having a predetermined structure, an interlayer insulating film 12 formed on the substrate 11, and a plurality of interlayer insulating films 12 formed on the substrate 11. A fuse 13, a protective film 14 covering the fuse 13, and a fuse box 15 formed on the protective film 14 are included. In this case, the fuse 13 is formed by using any one of the metal wires (eg, M2) among the multilayer metal wires (eg, M1 to M3). A protective film 14 having a predetermined thickness remains between the bottom of the fuse box 15 and the fuse 13.

The fuse unit having the structure as described above was subjected to the repair process by cutting the fuse 13 by irradiating a laser to the fuse 13 connected to the defective cell through the fuse box 15.

However, the above-described repair process has a problem of causing damage to the fuse 13 adjacent to each other. In addition, there is a problem that a crack is generated in the interlayer insulating film 12 under the fuse 13.

The present invention has been proposed to solve the above problems of the prior art, and an object of the present invention is to provide a fuse part of a semiconductor device which can prevent the structure adjacent to the fuse from being damaged during the repair process.

According to an aspect of the present invention, a plurality of fuses are formed on an interlayer insulating film; A dummy fuse spaced apart from the fuse and interposed between the fuses; And a dummy plug connected to the dummy fuse through the interlayer insulating layer. In this case, the dummy plug may be connected to a ground terminal. The fuse and the dummy fuse may be formed of a metal wiring disposed on the same plane. The fuse, the dummy fuse, and the dummy plug may be line patterns.

In addition, the fuse of the present invention includes a protective film covering the fuse and the dummy fuse; And a fuse box formed in the passivation layer. In this case, the length of the dummy fuse may be longer than the length of the fuse box in the extending direction of the fuse. The length of the dummy plug in the direction in which the fuse extends may be equal to or smaller than the length of the dummy fuse.

In addition, the fuse portion of the present invention is formed on the substrate plug connected to the ground end; And a dummy metal wiring formed in the interlayer insulating layer and connected to the plug and the dummy plug.

The present invention based on the above-described problem solving means, by placing a dummy fuse between the fuse and the fuse, and inserting a dummy plug penetrating the interlayer insulating film under the dummy fuse, thereby preventing damage to the structure adjacent to the fuse between the repair process It can work.

1A is a plan view illustrating a fuse unit of a semiconductor device according to the related art.
FIG. 1B is a cross-sectional view of the fuse portion of the semiconductor device according to the prior art, taken along the line X-X 'of FIG. 1A; FIG.
2A is a plan view illustrating a fuse unit of a semiconductor device according to an embodiment of the present invention.
FIG. 2B is a cross-sectional view of the fuse of the semiconductor device according to the exemplary embodiment taken along the line XX ′ of FIG. 2A.
FIG. 2C is a cross-sectional view of the fuse unit of the semiconductor device, taken along the line Y-Y ′ shown in FIG. 2A; FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, in order to facilitate a person skilled in the art to easily carry out the technical idea of the present invention.

The present invention, which will be described later, provides a fuse unit of a semiconductor device capable of preventing damage to a structure adjacent to a fuse during a repair process. To this end, the present invention is characterized in that a dummy fuse is inserted between the fuse and the fuse, and a dummy plug penetrating the interlayer insulating film is inserted into the interlayer insulating film under the dummy pattern.

Hereinafter, the features of the present invention will be described in more detail with reference to one embodiment of the present invention. In an exemplary embodiment, a case in which any one of the metal wires (eg, M2) among the multi-layered metal wires (eg, M1 to M3) is used as a fuse will be described.

2A to 2C are views illustrating a fuse unit of a semiconductor device according to an embodiment of the present invention. FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along the line X-X 'of FIG. 2A, and FIG. Is a cross-sectional view taken along the line Y-Y 'shown in FIG. 2A.

As illustrated in FIGS. 2A to 2C, a fuse part according to an embodiment of the present invention may include a plug formed on a substrate 21 and a substrate 21 on which a predetermined structure such as a word line and a bit line are formed and connected to a ground terminal. (29), a dummy plug 25 passing through the interlayer insulating film 22 on the substrate 21, a dummy plug 25 penetrating the interlayer insulating film 22, and a dummy formed in the interlayer insulating film 22 and connected to the plug 29 and the dummy plug 25. A plurality of fuses 23 formed on the metal wiring 28 and the interlayer insulating layer 22 and spaced apart from each other by a predetermined distance, and the dummy fuses 24 interposed between the fuses 23 and the fuses 23 and connected to the dummy plugs 25. ), A protective film 26 covering the fuse 23 and the dummy fuse 24, and a fuse box 27 formed in the protective film 26.

The fuse 23 is formed at the same time as the metal wiring located on the same plane and is a line pattern extending in the first direction. The fuses 23 are arranged to be spaced apart from the fuses 23 adjacent to each other in the second direction perpendicular to the first direction.

The dummy fuse 24 disposed between the fuse 23 and the fuse 23 is formed at the same time as the metal wiring positioned on the same plane as the fuse 23 and is a line pattern extending in the first direction. The dummy fuses 24 are disposed to be spaced apart from each other by the fuses 23 adjacent to each other in the second direction.

Here, the dummy fuse 24 disposed between the fuse 23 and the fuse 23 serves to prevent damage to the fuse 23 adjacent to each other during the repair process. In this case, the length L1 of the dummy fuse 24 in the first direction is longer than the length L2 of the fuse box 27 in order to more effectively prevent damage to the adjacent fuses 23.

The dummy plug 25 penetrating the interlayer insulating film 22 and connected to the dummy fuse 24 serves to prevent damage to the interlayer insulating film 22 during the repair process. At this time, in order to more effectively prevent damage to the interlayer insulating film 22, the dummy plug 25 is formed in a line pattern extending in the first direction. The length L3 of the dummy plug 25 in the first direction is equal to the length L1 of the dummy fuse 24 (L1 = L3) or is formed small (L1> L3). Here, the dummy plug 25 may be 'M2C' when the fuse 23 and the dummy fuse 24 are formed of 'M2' in the multilayer metal wirings M1 to M3.

Since the cutting energy should be concentrated only on the repair target fuse 23 when cutting the fuse 23, the dummy fuse 24 inserted between the fuse 23 and the fuse 23 is preferably grounded. The dummy fuse 25 connected to the dummy fuse 24 may be connected to the ground terminal by using the dummy metal wire 28 and the plug 29 to ground the dummy fuse 24. As a result, damage to the adjacent fuses 23 between the repair processes may be prevented more effectively. Here, the dummy metal wiring 28 may be 'M1' in the multilayer metal wirings M1 to M3, and the plug 29 connected to the ground terminal may be 'M1C'.

A protective film 27 having a predetermined thickness remains between the bottom of the fuse box 27 formed in the protective film 26 and the fuse 23. At this time, the reason why the protective film 27 having a predetermined thickness remains between the bottom of the fuse box 27 and the fuse 23 is to improve the fuse cutting efficiency.

Here, as the dummy fuse 24 is inserted between the fuse 23 and the fuse 23, the thickness of the protective film 27 remaining in the fuse box 27 forming process may be uniformly formed over the entire substrate 21. Can be. As described above, as the thickness of the remaining protective film 27 is formed to be constant, damage to the structure adjacent to the fuse 23 during the repair process may be effectively prevented. For reference, conventionally, the thickness of the protective layer 27 remaining between the bottom of the fuse box 27 and the fuse 23 and the space between the fuse 23 and the fuse 23 and the bottom of the fuse box 27 remain. Since the thicknesses of the protective films 27 are different from each other, it was very difficult to form a constant thickness of the protective films 27 remaining over the entire substrate 21. As such, if the thickness of the remaining protective film 27 is uneven, damage to the structure adjacent to the fuse 23 during the repair process is easily generated.

As described above, in the present invention, a dummy fuse 24 is inserted between the fuse 23 and the fuse 23, and a dummy plug 25 penetrating the interlayer insulating layer 22 is inserted below the dummy fuse 24. By doing so, it is possible to prevent the structure adjacent to the fuse 23 during the repair process from being damaged.

The technical idea of the present invention has been specifically described according to the above preferred embodiments, but it should be noted that the above embodiments are intended to be illustrative and not restrictive. In addition, it will be understood by those of ordinary skill in the art that various embodiments within the scope of the technical idea of the present invention are possible.

21 substrate 22 interlayer insulating film
23: fuse 24: dummy fuse
25: dummy plug 26: protective film
27: fuse box

Claims (8)

A plurality of fuses formed on the interlayer insulating film;
A dummy fuse spaced apart from the fuse and interposed between the fuses; And
A dummy plug connected to the dummy fuse through the interlayer insulating layer
A fuse unit of the semiconductor device comprising a.
The method of claim 1,
The dummy plug is a fuse of the semiconductor device connected to the ground terminal.
The method of claim 1,
And the fuse and the dummy fuse are formed of metal wires disposed on the same plane.
The method of claim 1,
And the fuse, the dummy fuse, and the dummy plug are line patterns. The method of claim 1,
A protective film covering the fuse and the dummy fuse; And
Fuse box formed on the protective film
A fuse unit of the semiconductor device further comprising.
The method of claim 5,
A fuse part of the semiconductor device having a length longer than that of the fuse box in a direction in which the fuse extends.
The method of claim 6,
And a length of the dummy plug in a direction in which the fuse extends is equal to or smaller than a length of the dummy fuse.
The method of claim 1,
A plug formed on the substrate and connected to a ground terminal; And
Dummy metal wiring formed in the interlayer insulating layer and connected to the plug and the dummy plug
A fuse unit of the semiconductor device further comprising.
KR1020100055253A 2010-06-11 2010-06-11 Semiconductor device with fuse part KR20110135501A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100055253A KR20110135501A (en) 2010-06-11 2010-06-11 Semiconductor device with fuse part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100055253A KR20110135501A (en) 2010-06-11 2010-06-11 Semiconductor device with fuse part

Publications (1)

Publication Number Publication Date
KR20110135501A true KR20110135501A (en) 2011-12-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150044789A (en) * 2013-10-11 2015-04-27 삼성전자주식회사 e-fuse structure of a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150044789A (en) * 2013-10-11 2015-04-27 삼성전자주식회사 e-fuse structure of a semiconductor device

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