TW201512650A - Method for inspecting dies on wafer - Google Patents

Abstract

A method for inspecting dies on a wafer includes: forming a carrier disk by attaching a UV dicing tape onto a carrier ring; attaching a wafer having multiple dies onto a first surface of the UV dicing tape; forming a light-transmissive film covering an inspection region on a second surface of the UV dicing tape by coating a light-transmissive polymer glue onto the second surface of the UV dicing tape; aligning the carrier disk attached with the wafer with a microscope; utilizing the microscope to observe a target die in the wafer to generate a captured image; comparing the captured image with a predetermined comparison image; and determining the target die as a defect die if the captured image does not match with the predetermined comparison image.

Description

Method of detecting crystal grains on a wafer

The invention relates to a method for detecting crystal grains, and more particularly to a method for detecting dies on a wafer.

In the existing integrated circuit process, prior to wafer dicing, the wafer is first placed on a UV dicing tape that is adhered to a carrier ring to avoid grain scatter when the wafer is diced. Case.

However, the surface of the generally used UV dicing tape may have fine unevenness, and the UV dicing tape has a refractive index of about 1.5, which is too large a difference from the refractive index of air. Therefore, when the light passes through the unevenness of the surface of the UV dicing tape, light scattering occurs, and the image of the integrated circuit layout in the grain can not be clearly observed by the microscope through the UV dicing tape. In this way, before the wafer is cut, it is impossible to detect the presence or absence of defects in the IC layout on the wafer, and whether the die may be cracked due to the cutting process. Damage caused defects are detected.

Therefore, the defective die will be processed by the subsequent wire bonding and/or packaging process, and will not be detected until the later circuit function test phase. Clearly, in the existing die inspection process, too many unnecessary wire bonding materials, packaging materials, wire bonding time, packaging time, and/or test time are spent on the defective die. If the dies on the wafer cannot be detected before the wafer dicing is completed, it is difficult to effectively improve the process efficiency of the integrated circuit and reduce the process cost.

In view of this, how to detect the integrated circuit layout in the die on the wafer before the wafer cutting is completed, and/or whether the die has damage due to cracking of the cutting process The detection is effective in improving the process efficiency of the integrated circuit and reducing the process cost, which is a problem to be solved in the industry.

The present specification provides an embodiment of a method for detecting a die on a wafer, comprising: bonding a UV cutting tape in a hollow region of a carrier ring to form a carrier disk; The wafer is adhered to a first surface of the UV dicing tape; a polymer glue is coated on a second surface of the UV dicing tape to form a transparent surface covering a region to be tested in the second surface a light film, wherein the area to be tested corresponds to a boundary of the wafer and an entire area within the boundary; the carrier disk to which the wafer is pasted is aligned with a microscope; and the microscope is used to observe the wafer a target die to generate a captured image; comparing the captured image with a predetermined alignment image; and if the captured image does not match the predetermined alignment image, determining the target die as a瑕疵 grain.

One of the advantages of the above embodiment is that the arrangement of the light-transmissive film enables the microscope to clearly observe the presence of defects on the wafer before the wafer is cut, thereby avoiding waste of the wire bonding material. , packaging materials, wire bonding time, packaging time, and/or test time on defective dies.

Another advantage of the above embodiment is that the process efficiency of the integrated circuit can be effectively improved and the process cost can be greatly reduced.

Other advantages of the invention will be explained in more detail by the following description and drawings.

102～118‧‧‧ Method flow

200‧‧‧ Carrying ring

202‧‧‧ hollow area

300‧‧‧ Carrying tray

320‧‧‧UV cutting tape

322‧‧‧ first surface of UV cutting tape

430‧‧‧ wafer

432‧‧‧ grain

434‧‧‧ cutting line

524‧‧‧ second surface of UV cutting tape

536‧‧‧ Area to be tested

640‧‧‧Removable sheets

750‧‧‧Transparent film

754‧‧‧The outer surface of the transparent film

860‧‧‧Microscope

1 is a simplified flow diagram of an embodiment of a method of detecting a die on a wafer of the present invention.

FIG. 2 is a schematic top plan view showing a simplified carrier ring according to an embodiment of the invention.

FIG. 3 is a schematic top plan view of a carrier disk according to an embodiment of the present invention.

4 is a simplified top plan view of an embodiment in which a wafer is adhered to the carrier of FIG.

FIG. 5 is a schematic bottom view of the carrier tray of FIG. 4. FIG.

Figure 6 is a simplified schematic view of an embodiment in which a removable sheet is adhered to the carrier of Figure 5.

Figure 7 is a simplified schematic view of an embodiment of forming a light transmissive film on the carrier of Figure 6.

Figure 8 is a schematic cross-sectional view showing the combination of the carrier disk, the wafer, and the light transmissive film of Figure 7 in a simplified A-A' direction.

Fig. 9 is a photograph of a crystal grain and a cutting line observed by a microscope in the case where a light-transmitting film is provided on a carrier.

Fig. 10 is a schematic cross-sectional view showing the carrier disk of Fig. 7 simplified in the A-A' direction when no light transmissive film is provided.

Fig. 11 is a photograph of a crystal grain and a cut line observed by a microscope in the case where the light-transmissive film of Fig. 7 is not provided.

Fig. 12 is a photograph of a crystal grain and a cut line observed by a microscope in the case where the light-transmissive film of Fig. 7 is replaced by a water film.

Embodiments of the present invention will be described below in conjunction with the associated drawings. In the drawings, the same reference numerals indicate the same or similar elements or methods.

Please refer to FIG. 1 , which is a simplified flowchart of an embodiment of a method for detecting a die on a wafer according to the present invention. For ease of understanding, the method described in the flowchart of FIG. 1 will be described below in conjunction with FIGS. 2 through 8.

In order to properly protect the wafer during the whole inspection process, the wafer to be inspected and cut is usually adhered to a carrier to be moved to prevent the wafer from being damaged by sliding or falling on the ground during the moving process. .

FIG. 2 is a schematic top plan view of a carrier ring 200 for forming a carrier tray according to an embodiment of the invention. In the embodiment of FIG. 2, the carrier ring 200 has a hollow region 202, and the outer shape of the carrier ring 200 and the hollow region 202 are both circular. In practice, the shape of the carrier ring 200 and the hollow region 202 can be adjusted to meet the needs of the semiconductor processing machine, and is not limited to the circular structure described above.

When performing the detection method of FIG. 1, first, a process 102 is performed to adhere a UV cutting tape 320 to the hollow region 202 of the carrier ring 200 to form a carrier disk 300, as shown in FIG. In the embodiment of FIG. 3, a first surface 322 of the UV-cut tape 320 having adhesiveness is used as a bearing surface for the carrier 300. In practice, the UV refractive index of the UV dicing tape 320 is typically close to 1.5.

Next, in a process 104, a wafer 430 provided with a plurality of dies 432 is adhered to the first surface 322 of the UV dicing tape 320, as shown in FIG. The aforementioned wafer 430 is a wafer that has not been cut. In practice, the wafer 430 can be a completely uncut wafer (ie, no trace line exists on the wafer), or a wafer that has undergone only preliminary cutting but has not been completely cut (ie, there are many wafers) The strip lines exist but the grains are still connected to each other). For example, in the embodiment of FIG. 4, wafer 430 is a wafer that has undergone only preliminary dicing but has not yet been completely diced. Thus, in addition to the plurality of dies 432, the wafer 430 also includes a plurality of dicing lines 434. Since the first surface 322 of the UV dicing tape 320 is viscous, the wafer 430 can be secured to the carrier 300. During the inspection of the die 432 in the wafer 430, the wafer 430 will move to the predetermined position with the carrier disk 300. After the dies 432 in the wafer 430 are all detected, the dicing of the wafer 430 can be performed along the cutting line 434. At this time, the adhesion of the first surface 322 will be multiple in the wafer 430. The die 432 is fixed on the carrier 300 to avoid scattering of the die 432 when the wafer 430 is diced.

FIG. 5 is a simplified bottom view of the carrier tray 300 of FIG. 4. FIG. In FIG. 5, reference numeral 524 represents another surface of the UV dicing tape 320, hereinafter referred to as a second surface 524. The second surface 524 includes a boundary 536 corresponding to a boundary of the wafer 430 and an entire area within the boundary. In other words, the area to be tested 536 in this embodiment corresponds to a projection area of the wafer 430 on the second surface 524.

In flow 106, the removable sheet 640 is adhered to the second surface 524 of the UV dicing tape 320 such that the removable sheet 640 is outside of the region 536 to be tested, as shown in FIG. In an embodiment, the removable sheet 640 can be implemented with an object that is inherently viscous, such as a tape. In another embodiment, the removable sheet 640 can be realized with an object that is not inherently viscous (eg, a plastic sheet, a sheet of paper, a sheet of metal). When the removable sheet 640 is implemented as an object that is not inherently viscous, the removable sheet 640 can be adhered to the second surface 524 of the UV dicing tape 320 using a suitable adhesive in the process 106.

Next, in process 108, a polymer glue is coated on the second surface 524 of the UV dicing tape 320 to form a light transmissive film 750 covering the region 536 to be tested in the second surface 524, as shown in FIG. . As previously discussed, the second surface 524 of the UV dicing tape 320 may have subtle uneven details. Since the polymer glue used in the process 108 is in the form of a liquid, coating the polymer glue on the second surface 524 can effectively fill the unevenness on the second surface 524. In addition, the polymer glue is a light-transmissive film 750 which is volatilized in a liquid form to form a solid form. During the process of curing the polymer glue from the fluid form to the light-transmissive film 750, it is subjected to surface tension, so that an outer surface 754 of the light-transmissive film 750 is relatively flat.

In this embodiment, the refractive index of the polymer glue is between 1.3 and 1.7. Therefore, the light refractive index of the light-transmissive film 750 composed of the polymer glue is also between 1.3 and 1.7 (for example, Between 1.45 and 1.55), the refractive index of the UV cutting tape 320 is very close to or equal to the refractive index of the UV dicing tape 320. In practice, the light-transmissive film 750 may cover only the range of the region to be tested 536, and may cover a range exceeding the region 536 to be tested, and the shape of the light-transmissive film 750 is not limited to a specific shape.

In the process 110, the carrier 300 to which the wafer 430 is pasted is aligned with a microscope 860, as shown in FIG. In the embodiment of FIG. 8, the light transmissive film 750 and the UV dicing tape 320 may be placed between the wafer 430 and the microscope 860 by moving the carrier 300 or by moving the microscope 860.

In flow 112, a target die in wafer 430 is viewed using microscope 860 to produce a captured image. As shown in FIG. 8, the incident light Lin is irradiated to the inside of the wafer 430 through the transparent film 750 and the UV dicing tape 320, and the reflected light is formed from the inside of the wafer 430 through the UV dicing tape 320 and the transparent film 750. The light is emitted Lout and injected into the microscope 860. Since the outer surface 754 of the light-transmissive film 750 is relatively flat, it is almost planar as viewed from the microscopic range observed by the microscope 860. Therefore, when the incident light Lin passes through the boundary between the air and the outer surface 754 of the light transmissive film 750, the phenomenon of light scattering hardly occurs. In addition, since the unevenness on the second surface 524 of the UV dicing tape 320 has been filled with the polymer glue, and the light refractive index of the light-transmissive film 750 and the UV dicing tape 320 is very close, when the incident light Lin passes through When the light film 750 and the second surface 524 of the UV dicing tape 320 are at the boundary, light scattering does not occur. Likewise, when the reflected light passes through the boundary between the second surface 524 of the UV dicing tape 320 and the light transmissive film 750, the phenomenon of light scattering hardly occurs. Further, when the reflected light passes through the boundary between the outer surface 754 of the light-transmitting film 750 and the air to form the outgoing light Lout, the phenomenon of light scattering hardly occurs.

Therefore, the microscope 860 can clearly capture the image of the target crystal grain in the wafer 430 through the transparent film 750 and the UV dicing tape 320 in the process 112, that is, the integrated circuit layout in the target crystal grain. An image of the image, and/or the area near the boundary of the target grain (ie, the cut line 434 next to the target die).

For example, FIG. 9 is a photograph of a die 432 and a cutting line 434 observed by the microscope 860 in the case where the light transmitting film 750 is disposed on the carrier 300. As shown in FIG. 9, by forming the light transmissive film 750 on the second surface 524 of the UV dicing tape 320 in the foregoing manner, the microscope 860 can clearly observe the image of the integrated circuit layout in the target crystal grain, and An image of the area near the cut line 434 next to the target die.

Next, a flow 114 is performed to compare the captured image produced by the microscope 860 with a predetermined aligned image. For example, the captured image generated by the microscope 860 can be transmitted to an image matching circuit (not shown), and the captured image is compared with the predetermined aligned image by the image matching circuit to analyze the target crystal. Whether there is a flaw in the integrated circuit layout in the grain, and whether there is a flaw in the target crystal grain due to the crack of the cutting line 434.

If the captured image does not match the predetermined alignment image, then flow 116 is performed to determine the target die as a single die.

In practice, the captured image generated by the microscope 860 in the foregoing process 112 may be an image corresponding to a single target die in the wafer 430, or may be a plurality of target grains in the wafer 430. Corresponding image.

In some process or manufacturing stations of integrated circuits, it is undesirable for the light transmissive film 750 to remain on the second surface 524 of the UV dicing tape 320. In this case, flow 118 can be performed to clamp the removable sheet 640 with a clamp and move the clamp to remove the removable sheet 640 from the light transmissive film 750 adhered to the removable sheet 640 from the UV cutting tape 320. The second surface 524 is torn off. In practice, the process 118 can be performed after the microscope 860 produces a captured image of the target die, or after the microscope 860 produces a captured image of all of the die 432 of the wafer 430.

Please refer to FIG. 10 , which is a schematic cross-sectional view taken along the A-A' direction of FIG. 7 when the transparent film 750 is not disposed on the carrier 300. As shown in FIG. 10, there is a slight unevenness on the second surface 524 of the UV dicing tape 320, and there is a significant difference between the refractive index of the UV dicing tape 320 and the refractive index of the air. Therefore, when the incident light Lin passes through the boundary of the air with the second surface 524 of the UV dicing tape 320, a significant light scattering phenomenon occurs. Similarly, when the reflected light passes through the boundary between the second surface 524 of the UV dicing tape 320 and the air to form the outgoing light Lout', a significant light scattering phenomenon also occurs. In this case, the microscope 860 cannot clearly capture an image of the integrated circuit layout in the target die in the wafer 430, and an image of the area near the cutting line next to the target die.

For example, FIG. 11 is a photograph of a crystal grain 432 and a cutting line 434 observed by the microscope 860 in the case where the light-transmitting film 750 is not provided. As shown in FIG. 11, since the unevenness of the second surface 524 of the UV dicing tape 320 causes severe light scattering, the microscope 860 can only obscure the approximate position of the cutting line 434 in the wafer 430, but It is impossible to capture a clear image of the integrated circuit layout within the target die and an image of the area near the cutting line next to the target die.

Further, it was found from the results of the experiment that the same effect can be achieved without replacing the aforementioned light-transmissive film 750 with any transparent fluid. For example, FIG. 12 is a photograph of a crystal grain 432 and a dicing line 434 observed by the microscope 860 in the case where the above-described light transmissive film 750 is replaced by a water film. As shown in FIG. 12, due to the difference in refractive index between the water and the UV dicing tape 320, the difference in refractive index between the light-transmitting film 750 and the UV dicing tape 320 is larger, and therefore, when the incident light Lin passes through the When the water film is in contact with the second surface 524 of the UV dicing tape 320, significant light scattering still occurs. In addition, significant light scattering also occurs when reflected light passes through the intersection of the second surface 524 of the UV dicing tape 320 and the water film to form a light exit. As shown in FIG. 12, at this time, although the microscope 860 can faintly observe the image of the integrated circuit layout in the die 432 and the image of the area near the cutting line 434 beside the die 432, the sharpness of the image is significantly lower than that of the image. 9 embodiment. Therefore, when a water film is used in place of the above-described light-transmissive film 750, the error rate of the image matching program in the above-described flow 114 is greatly increased.

In addition, when the water film is used in place of the light transmissive film 750 proposed in the present invention, additional equipment must be added to form a stable water film on the second surface 524 of the UV dicing tape 320. For example, additional glass sheets may be used to hold the water film, additional equipment for supporting the glass sheets, and drying equipment for drying the moisture. It is well known that the precision of the wafer process is quite high and must be carried out in a clean room, and the humidity must be strictly controlled to ensure that the die 432 is not damaged by moisture. Obviously, replacing the aforementioned light-transmissive film 750 with a water film increases the additional burden of the humidity control device in the fab and also increases the risk of moisture damage to the die 432. From this, it is understood that the method of replacing the light-transmitting film 750 with a water film is not suitable for use in the above-described undivided grain detecting process.

If the light-transmitting film 750 is replaced by a glycerin film, the difference in refractive index between the light-transmitting film 750 and the UV-cut tape 320 is larger than the difference in refractive index between the glycerin and the UV-cut tape 320. Therefore, when the incident light Lin passes through the junction of the glycerin film and the second surface 524 of the UV dicing tape 320, a significant light scattering phenomenon also occurs. Similarly, when the reflected light passes through the boundary between the second surface 524 of the UV dicing tape 320 and the glycerin film to form a light, a significant light scattering phenomenon also occurs. In this case, the microscope 860 also cannot observe the image of the integrated circuit layout in the die 432 very clearly, and the image of the area near the cut line 434 next to the die 432. Therefore, when the glycerin film is used in place of the above-mentioned light-transmissive film 750, the error rate of the image matching program in the above-described flow 114 is also greatly increased.

Additionally, once applied to the second surface 524 of the UV dicing tape 320, glycerin is difficult to remove completely. To remove the glycerol film from the second surface 524 of the UV dicing tape 320, additional degreasing equipment and cleaning procedures are necessary, which would certainly increase the fab's equipment control complexity and process complexity, and thus Not suitable for use in the aforementioned undivided grain inspection process.

It can be seen from the foregoing description that the method for detecting the crystal grains on the wafer of the present invention only needs to form the light-transmissive film 750 on the second surface 524 of the UV dicing tape 320 in the foregoing manner, so that the microscope 860 can be cut by UV. The tape 320 and the light transmissive film 750 clearly observe the integrated circuit layout of the die 432 on the wafer 430, and the image of the area near the dicing line 434 next to the die 432. In this way, before the wafer 430 is cut, it is possible to detect whether the integrated circuit layout in the die 432 on the wafer 430 is defective, and whether the die 432 is damaged due to the crack of the cutting wire 434. The presence of defects can avoid wasting wire materials, packaging materials, wire bonding time, packaging time, and/or test time on defective dies. Therefore, the detection method proposed by the invention can effectively improve the process efficiency of the integrated circuit and reduce the process cost.

In addition, the polymer glue used in the foregoing detection process does not cause an increase in the humidity of the air that affects the clean room, and therefore, does not increase the risk of moisture damage of the crystal grains 432 on the wafer 430.

Moreover, when the subsequent process or manufacturing machine does not want the light-transmissive film 750 to remain on the second surface 524 of the UV-cut tape 320, the light-transmissive film 750 can be easily removed from the UV-cut tape 320. Without causing problems in cleaning or troubles in subsequent processes.

It should be noted that the execution sequence of the foregoing process in FIG. 1 is merely an exemplary embodiment, and is not intended to limit the actual implementation of the present invention. For example, the process 106 can be modified to be between processes 102 and 104, or can be changed to be prior to process 102. Additionally, the process 118 can be modified to be between the processes 112 and 114 or can be modified between the processes 114 and 116.

Additionally, only one removable sheet 640 is used in the flow 106 of the foregoing embodiment, but this is merely an exemplary embodiment and is not intended to limit the actual implementation of the invention. In practice, a plurality of removable sheets 640 can also be adhered to the second surface 524 of the UV dicing tape 320 in the process 106. In this case, a plurality of clamps can be used in the process 118 to tear the plurality of removable sheets 640 and the light transmissive film 750 adhered to the plurality of removable sheets 640 from the second surface 524 of the UV dicing tape 320. .

In some applications, the aforementioned processes 106 and 118 may also be omitted.

In the foregoing process 110, the relative position between the microscope 860, the wafer 430, the UV dicing tape 320, and the light transmissive film 750 is such that the light transmissive film 750 and the UV dicing tape 320 are located between the wafer 430 and the microscope 860. . However, this is only an exemplary embodiment and is not intended to limit the actual implementation of the invention. In practice, in the foregoing process 110, the wafer 430 and the UV dicing tape 320 are placed on the transparent film 750 and the microscope 860 by moving the carrier 300 or by moving the microscope 860. Between the steps of forming the microscope 860 in FIG. 8 above the wafer 430 and facing the wafer 430. In this way, the incident light Lin will pass through the wafer 430, the UV dicing tape 320, and the transparent film 750 to the reflective surface (not shown) located behind the transparent film 750, and the reflected light will pass through the reflective surface. The light transmissive film 750, the UV dicing tape 320, and the wafer 430 are formed to emit light, and are incident on the microscope 860. In this case, in the foregoing process 112, the microscope 860 can be directly facing the wafer 430 to capture images in the target die in the wafer 430, and the boundary of the target die (ie, the aforementioned cutting line). 434) Nearby images.

Certain terms are used throughout the description and claims to refer to particular elements. However, those of ordinary skill in the art should understand that the same elements may be referred to by different nouns. The specification and the scope of patent application do not use the difference in name as the way to distinguish the components, but the difference in function of the components as the basis for differentiation. The term "including" as used in the specification and the scope of the patent application is an open term and should be interpreted as "including but not limited to".

The description of "and/or" as used herein includes any combination of one or more of the listed items. In addition, the terms of any singular are intended to include the meaning of the plural, unless otherwise specified in the specification.

The term "element" as used in the specification and claims includes the concept of a component, a layer, or a region.

The size and relative sizes of some of the elements of the drawings may be exaggerated, or the shapes of some of the elements may be simplified so that the contents of the embodiments can be more clearly expressed. Accordingly, the shapes, dimensions, relative sizes and relative positions of the various elements in the drawings are merely illustrative and are not intended to limit the scope of the invention. In addition, the present invention may be embodied in many different forms, and the present invention should not be limited to the embodiment of the present invention.

For convenience of description, some descriptions relating to the relative position in space may be used in the specification to describe the function of an element in the drawing or the relative spatial relationship between the element and other elements. For example, "on", "above", "under", "below", "above", "below", "up", "down", etc. It should be understood by those of ordinary skill in the art that these descriptions relating to relative positions in space include not only the orientation of the described elements in the drawings, but also the use and operation of the described elements. Or various different pointing relationships when assembling. For example, if the pattern is turned upside down, the component that was originally described by "on" will become "under". Therefore, the description of "on" in the specification includes two different pointing relationships of "under" and "on". Similarly, the term "upward" as used herein includes two different pointing directions, "upward" and "downward".

In the specification and claims, if the first element is described on the second element, above the second element, connected, coupled, coupled to or coupled to the second element, the first element is directly Positioning on the second component, directly connecting, directly bonding, or directly coupling to the second component may also indicate that other components exist between the first component and the second component. In contrast, if the first element is described as being directly on the second element, directly connected, directly bonded, directly coupled, or directly connected to the second element, there is no other element between the first element and the second element. .

The above are only the preferred embodiments of the present invention, and all changes and modifications made to the claims of the present invention are intended to be within the scope of the present invention.

102~118‧‧‧ Method flow

Claims (11)

A method of detecting grains on a wafer, comprising:
Adhering a UV cutting tape to a hollow region of a carrier ring to form a carrier tray;
Pasting a wafer provided with a plurality of crystal grains on a first surface of the UV dicing tape;
Applying a polymer glue to a second surface of the UV dicing tape to form a light transmissive film covering a region to be tested in the second surface, wherein the region to be tested and the wafer are The boundary corresponds to an entire area within the boundary;
Aligning the carrier disk to which the wafer is pasted to a microscope;
Observing a target die in the wafer by using the microscope to generate a captured image;
Comparing the captured image with a predetermined comparison image; and if the captured image does not match the predetermined alignment image, determining the target crystal grain as a single crystal grain. The method of claim 1, further comprising:
Adhesively attaching one or more removable sheets to the second surface of the UV dicing tape prior to forming the light transmissive film such that the one or more removable sheets are located outside the area to be tested;
Wherein, the process of forming the transparent film comprises:
Applying the polymer glue to a partial region of each of the one or more removable sheets such that the light transmissive film covers and adheres to the one or more removable sheets Partial area. The method of claim 2, further comprising:
After generating the captured image, the one or more removable sheets are held by one or more clamps and the one or more clamps are moved to adhere the one or more removable sheets to the one The light transmissive film of the plurality of removable sheets is torn from the second surface of the UV dicing tape. The method of claim 2, further comprising:
After the microscope produces a plurality of captured images corresponding to all of the dies of the wafer, the one or more removable sheets are held by one or more clamps and the one or more clamps are moved to The one or more removable sheets and the light transmissive film adhered to the one or more removable sheets are peeled from the second surface of the UV dicing tape. The method of claim 2, wherein the step of adhering the one or more removable sheets to the second surface of the UV dicing tape is to adhere the UV dicing tape to the hollow region of the carrier ring Before proceeding. The method of claim 2, wherein the step of adhering the one or more removable sheets to the second surface of the UV dicing tape is to adhere the wafer to the first of the UV dicing tape Perform before the surface. The method of claim 1, further comprising:
After the captured image is produced, the light transmissive film is peeled off from the second surface of the UV dicing tape. The method of claim 1, further comprising:
After the microscope produces a captured image of all of the wafers of the wafer, the light transmissive film is torn from the second surface of the UV dicing tape. The method of claim 1, wherein the process of aligning the carrier with the wafer to the microscope comprises:
The light transmissive film and the UV dicing tape are placed between the wafer and the microscope;
The process for generating the captured image includes:
The target die in the wafer is observed by the microscope through the light transmissive film and the UV dicing tape to generate the captured image. The method of claim 1, wherein aligning the carrier tray to which the wafer is attached comprises:
The wafer and the UV dicing tape are placed between the light transmissive film and the microscope. The method of any one of claims 1 to 10, wherein the light transmissive film has a refractive index of between 1.3 and 1.7.