TW202109730A - Supporting sheet and method for processing transparent plate - Google Patents

Supporting sheet and method for processing transparent plate Download PDF

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Publication number
TW202109730A
TW202109730A TW109111027A TW109111027A TW202109730A TW 202109730 A TW202109730 A TW 202109730A TW 109111027 A TW109111027 A TW 109111027A TW 109111027 A TW109111027 A TW 109111027A TW 202109730 A TW202109730 A TW 202109730A
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Taiwan
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transparent plate
sheet
transparent
front surface
cutting
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TW109111027A
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Chinese (zh)
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木內逸人
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/24—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising with cutting discs
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

Provided are a support sheet a method for processing a transparent plate. The support sheet for supporting a workpiece at least comprises a transparent sheet with a front surface for supporting the workpiece and a reflection film stacked on the rear surface of the transparent sheet. The method for processing the transparent plate at least comprises: a groove forming step of positioning a cutting blade on the front surface of the transparent plate (workpiece) and cutting transparent plate to form a plurality of half-cut grooves not reaching the rear surface; a supporting step of positioning the front surface of the support sheet on the front surface of the transparent plate to support the transparent plate; and a cutting step of positioning the cutting blade on the rear surface of the transparent plate to cut a region corresponding to the half-cut groove formed on the front surface. The cutting step includes a detection step of detecting the half-cut groove formed on the front surface from the rear surface of the transparent plate to diffusely reflect light on the side and bottom surfaces of the half-cut groove formed on the front surface by the reflection film and clearly detect the half-cut groove formed on the front surface from the rear surface side.

Description

支撐片材、及透明板之加工方法Supporting sheet and processing method of transparent board

本發明是有關於一種支撐被加工物的支撐片材、及使用該支撐片材的透明板之加工方法。The present invention relates to a supporting sheet for supporting an object to be processed, and a processing method of a transparent board using the supporting sheet.

將IC、LSI等複數個器件以分割預定線區劃而形成於正面的晶圓，是藉由可旋轉地設置切割刀片的切割裝置而分割成一個個的器件，並利用於行動電話、個人電腦等電氣機器上。A wafer formed on the front side of a plurality of devices such as ICs and LSIs divided by predetermined dividing lines is divided into individual devices by a dicing device with a dicing blade rotatably installed, and is used in mobile phones, personal computers, etc. On electrical machines.

又，已由申請人提出有以下技術：於晶圓的正面形成深度未到達背面的半切溝後，從背面側藉由紅外線相機檢測半切溝，並從晶圓的背面將切割刀片定位至到達該半切溝的深度來進行切割，而將晶圓分割成一個個的晶片(參照專利文獻1)。 先前技術文獻 專利文獻In addition, the applicant has proposed the following technology: after forming a half-cut groove on the front surface of the wafer with a depth that does not reach the back surface, detect the half-cut groove from the back side with an infrared camera, and position the dicing blade from the back surface of the wafer to reach the half-cut groove. Dicing is performed at half the depth of the groove, and the wafer is divided into individual wafers (see Patent Document 1). Prior art literature Patent literature

專利文獻1：日本專利特開平06-232255號公報Patent Document 1: Japanese Patent Laid-Open No. 06-232255

發明欲解決之課題The problem to be solved by the invention

但是，依據專利文獻1所記載的技術，在由如玻璃的透明板所構成的被加工物的正面形成半切溝之後，欲從背面側藉由使用了拍攝裝置的校準機構來檢測已形成於正面的半切溝時，會有以下問題：由於被加工物整體為透明，無法明確地檢測形成有半切溝的區域與其他區域的交界，使沿著該半切溝正確地從背面側進行切割較困難。However, according to the technique described in Patent Document 1, after a half-cut groove is formed on the front surface of a workpiece made of a transparent plate such as glass, it is desired to detect that it has been formed on the front side by a calibration mechanism using an imaging device from the back side. In the case of half-cut grooves, there is a problem: Since the entire workpiece is transparent, the boundary between the area where the half-cut grooves are formed and other areas cannot be clearly detected, making it difficult to cut accurately from the back side along the half-cut grooves.

本發明是有鑒於上述事實而作成的發明，其主要的技術課題在於提供一種支撐片材、及使用了該支撐片材的透明板之加工方法，前述支撐片材適合於在由透明板所構成的被加工物的正面形成半切溝後，從背面側檢測已形成於正面的半切溝。 用以解決課題之手段The present invention is an invention made in view of the above facts. Its main technical subject is to provide a support sheet and a method for processing a transparent board using the support sheet. The support sheet is suitable for use in a transparent board. After the half-cut groove is formed on the front side of the workpiece, the half-cut groove that has been formed on the front side is detected from the back side. Means to solve the problem

為了解決上述主要的技術課題，根據本發明可提供一種支撐片材，是支撐被加工物的支撐片材，且至少由以下所構成：透明片材，具有支撐被加工物的正面；及反射膜，積層於該透明片材的背面。In order to solve the above-mentioned main technical problems, according to the present invention, a support sheet can be provided, which is a support sheet for supporting a processed object, and is composed of at least the following: a transparent sheet having a front surface supporting the processed object; and a reflective film , Laminated on the back of the transparent sheet.

該透明片材宜為聚烯烴系片材、聚酯系片材的任一種。又，該反射膜宜包含鋁薄膜、金屬色塗料的任一種。The transparent sheet is preferably either a polyolefin-based sheet or a polyester-based sheet. In addition, the reflective film preferably contains either an aluminum thin film or a metallic paint.

又，根據本發明可提供一種透明板之加工方法，前述加工方法至少包含以下步驟： 溝形成步驟，將切割刀片定位於透明板的正面來進行切割，而形成未到達背面的複數條半切溝； 支撐步驟，將上述支撐片材的正面定位並支撐於透明板的正面；及 切割步驟，將切割刀片定位於透明板的背面來對與已形成於正面的該半切溝相對應的區域進行切割， 又，在該切割步驟中包含從透明板的背面檢測形成於正面的該半切溝之檢測步驟。Furthermore, according to the present invention, a method for processing a transparent plate can be provided, and the foregoing processing method at least includes the following steps: In the groove forming step, the cutting blade is positioned on the front side of the transparent plate for cutting, and a plurality of half-cut grooves that do not reach the back side are formed; The supporting step is to position and support the front side of the above-mentioned supporting sheet on the front side of the transparent plate; and In the cutting step, the cutting blade is positioned on the back side of the transparent plate to cut the area corresponding to the half-cut groove formed on the front side, In addition, the cutting step includes a detection step of detecting the half-cut groove formed on the front surface from the back surface of the transparent plate.

在該切割步驟中，可以使用寬度比已形成於透明板的正面的該半切溝的寬度更寬、或更窄的切割刀片，來從透明板的背面形成到達該半切溝的深度之溝而分割成複數個晶片。 發明效果In this cutting step, a cutting blade with a width wider or narrower than the width of the half-cut groove formed on the front surface of the transparent plate can be used to form a groove reaching the depth of the half-cut groove from the back surface of the transparent plate and divide. Into a plurality of wafers. Invention effect

由於本發明的支撐片材是至少由具有支撐被加工物的正面之透明片材、及積層在該透明片材的背面之反射膜所構成的支撐片材，因此可將該支撐片材適用於至少包含切割步驟的透明板之加工方法，且前述切割步驟是將切割刀片定位於透明板的背面來對與已形成於正面的半切溝相對應的區域進行切割之步驟，藉此可以在從透明板的背面檢測形成於正面的半切溝之檢測步驟中，明確地檢測該半切溝。Since the support sheet of the present invention is a support sheet composed of at least a transparent sheet having a front surface supporting a workpiece, and a reflective film laminated on the back surface of the transparent sheet, the support sheet can be applied to A method for processing a transparent plate that includes at least a cutting step, and the aforementioned cutting step is a step of positioning the cutting blade on the back of the transparent plate to cut the area corresponding to the half-cut groove formed on the front side, so that the transparent plate can be removed from the transparent plate. In the detection step of detecting the half-cut groove formed on the front side of the board, the half-cut groove is clearly detected.

又，本發明的透明板之加工方法藉由至少包含以下步驟：溝形成步驟，將切割刀片定位於透明板的正面來進行切割，而形成未到達背面的複數條半切溝；支撐步驟，將上述支撐片材的正面定位並支撐於透明板的正面；及切割步驟，將切割刀片定位於透明板的背面來對與已形成於正面的該半切溝相對應的區域進行切割，且在該切割步驟中包含從透明板的背面檢測形成於正面的該半切溝之檢測步驟，而可以在形成於正面的半切溝之側面及底面使藉由該反射膜而反射之光漫反射，而從背面側明確地檢測形成於正面的半切溝。In addition, the processing method of the transparent plate of the present invention includes at least the following steps: a groove forming step, positioning the cutting blade on the front surface of the transparent plate to perform cutting, so as to form a plurality of half-cut grooves that do not reach the back surface; The front side of the supporting sheet is positioned and supported on the front side of the transparent plate; and the cutting step is to position the cutting blade on the back side of the transparent plate to cut the area corresponding to the half-cut groove formed on the front side, and in the cutting step It includes a detection step of detecting the half-cut groove formed on the front surface from the back of the transparent plate, and the light reflected by the reflective film can be diffusely reflected on the side and bottom surface of the half-cut groove formed on the front surface, and it is clear from the back side. Ground detection of the half-cut groove formed on the front side.

用以實施發明之形態The form used to implement the invention

以下，一邊參照附加圖式一邊針對依據本發明所構成的透明板之加工方法的實施形態詳細地進行說明，並且針對適合於該透明板之加工方法的支撐片材進行說明。Hereinafter, the embodiment of the processing method of the transparent plate constructed according to the present invention will be described in detail while referring to the attached drawings, and the supporting sheet suitable for the processing method of the transparent plate will be described.

在實施本實施形態的透明板之加工方法時，首先，如圖1所示，準備作為被加工物的透明板10。透明板10是如玻璃般透明的圓形狀的板狀物，且除了玻璃基板以外，亦可為例如將藍寶石、鉭酸鋰(LiTaO3 )、鈮酸鋰(LiNbO3 )等做成板狀物之構成，而非特別限定之構成。When implementing the processing method of the transparent board of this embodiment, first, as shown in FIG. 1, the transparent board 10 as a to-be-processed object is prepared. The transparent plate 10 is a circular plate that is transparent like glass, and in addition to a glass substrate, for example, sapphire, lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), etc. may be made into a plate. The composition is not specifically limited.

已準備透明板10後，搬送到圖1所示之切割裝置20(僅顯示一部分)，並載置於已配設在切割裝置20的工作夾台22上。工作夾台22的上表面是藉由具有通氣性之多孔陶瓷所形成的吸附夾頭24所構成，且連接於未圖示的吸引機構。又，在本實施形態的工作夾台22的外周，在周方向上以均等的間隔配設有4個夾具26，前述夾具26是用於在透過後述之支撐片材而於環狀的框架支撐有被加工物的情況下支撐該框架。After the transparent plate 10 has been prepared, it is transported to the cutting device 20 shown in FIG. 1 (only part of which is shown), and placed on the work clamp table 22 that has been arranged on the cutting device 20. The upper surface of the work chuck table 22 is composed of a suction chuck 24 formed of porous ceramics with air permeability, and is connected to a suction mechanism not shown. In addition, on the outer periphery of the work clamp table 22 of the present embodiment, four clamps 26 are arranged at equal intervals in the circumferential direction. The clamps 26 are used to support a ring-shaped frame through a supporting sheet described later. Support the frame when there is a workpiece.

將透明板10載置於工作夾台22，並藉由作動未圖示之吸引機構，而將透明板10吸引保持在工作夾台22的吸附夾頭24上。在此，將吸引保持在工作夾台22的透明板10的露出於上方之側設為正面10a，並將相反側(下方側)設為背面10b。當將透明板10吸引保持在工作夾台22後，即可實施溝形成步驟，前述溝形成步驟是將切割刀片定位到透明板10的正面10a來進行切割而形成未到達背面10b的複數條半切溝。一邊參照圖2一邊更具體地說明該溝形成步驟。The transparent plate 10 is placed on the work chuck table 22, and the suction mechanism (not shown) is operated to suck and hold the transparent plate 10 on the suction chuck 24 of the work chuck table 22. Here, the side exposed upward of the transparent plate 10 sucked and held on the work clamp table 22 is referred to as the front surface 10a, and the opposite side (lower side) is referred to as the back surface 10b. After the transparent plate 10 is sucked and held on the work clamp 22, the groove forming step can be implemented. The groove forming step is to position the cutting blade on the front surface 10a of the transparent plate 10 for cutting to form a plurality of half-cuts that do not reach the back surface 10b. ditch. This groove forming step will be described more specifically with reference to FIG. 2.

在切割裝置20上，是如圖2(a)所示，配設有用於實施溝形成步驟的切割機構30。切割機構30具備有主軸單元32。主軸單元32具備有藉由未圖示之馬達而被旋轉驅動的旋轉主軸34、固定於旋轉主軸34的前端部且於外周具有切割刃之例如具有50μm之厚度的切割刀片36A、及保護切割刀片36A的刀片蓋38，並構成為可藉由未圖示之移動機構而在箭頭Y所示之Y軸方向上、及箭頭Z所示之Z軸方向上移動。As shown in FIG. 2(a), the cutting device 20 is provided with a cutting mechanism 30 for performing the groove forming step. The cutting mechanism 30 includes a spindle unit 32. The main shaft unit 32 includes a rotating main shaft 34 that is rotatably driven by a motor not shown, a cutting blade 36A fixed to the front end of the rotating main shaft 34 and having a cutting edge on the outer periphery, for example, a cutting blade 36A having a thickness of 50 μm, and a protective cutting blade The blade cover 38 of 36A is configured to be movable in the Y-axis direction indicated by arrow Y and the Z-axis direction indicated by arrow Z by a moving mechanism not shown.

在將透明板10保持在工作夾台22上之後，即可將切割刀片36A定位到預定之加工開始位置且未到達透明板10的背面10b之深度位置，使切割刀片36A以預定的旋轉速度(例如30000rpm)旋轉，並且作動未圖示之移動機構，而使工作夾台22朝以箭頭X所示之X軸方向移動，來形成從正面10a側至未到達背面10b之深度的半切溝100(參照圖2(b))。當沿著X軸方向形成第一條半切溝100之後，藉由未圖示之移動機構使主軸單元32朝Z軸方向上升並且朝Y軸方向移動，而隔著預定的間隔來進一步形成半切溝100。藉由重複進行此作法，而在透明板10的正面10a上整個區域的預定的方向上以預定的間隔形成複數條半切溝100。之後，作動未圖示的旋轉驅動機構來使工作夾台22旋轉90°，而在與先前所形成的複數條半切溝100正交的方向上，藉由與上述同樣的程序，以預定的間隔形成複數條半切溝100，而在正面10a上的整個區域格子狀地形成半切溝100(如有必要，請參照圖4(a))。藉由以上，溝形成步驟即完成。After the transparent plate 10 is held on the work clamp table 22, the cutting blade 36A can be positioned to the predetermined processing start position and does not reach the depth position of the back 10b of the transparent plate 10, so that the cutting blade 36A rotates at a predetermined rotation speed ( For example, 30,000 rpm) rotates and actuates a moving mechanism (not shown) to move the work chuck table 22 in the X-axis direction indicated by the arrow X to form a half-cut groove 100 from the front side 10a to a depth that does not reach the back side 10b. Refer to Figure 2(b)). After the first half-cut groove 100 is formed along the X-axis direction, the spindle unit 32 is raised in the Z-axis direction and moved in the Y-axis direction by a moving mechanism not shown, and the half-cut groove is further formed at a predetermined interval. 100. By repeating this method, a plurality of half-cut grooves 100 are formed at predetermined intervals in a predetermined direction of the entire area on the front surface 10 a of the transparent plate 10. After that, a rotation drive mechanism (not shown) is actuated to rotate the work chuck 22 by 90°, and in a direction orthogonal to the plurality of half-cut grooves 100 formed previously, at predetermined intervals by the same procedure as described above. A plurality of half-cut grooves 100 are formed, and the half-cut grooves 100 are formed in a lattice pattern in the entire area on the front surface 10a (if necessary, refer to FIG. 4(a)). With the above, the groove forming step is completed.

已完成上述之溝形成步驟後，實施將支撐片材的正面定位並支撐於透明板10的正面10a的支撐步驟。在此，一邊參照圖3一邊針對適合於本實施形態的透明板之加工方法的支撐片材進行說明。After the above-mentioned groove forming step has been completed, the supporting step of positioning and supporting the front surface of the supporting sheet on the front surface 10a of the transparent plate 10 is carried out. Here, with reference to FIG. 3, the support sheet suitable for the processing method of the transparent board of this embodiment is demonstrated.

在圖3中所顯示的是用於說明本實施形態之用於形成支撐片材12的第一程序的概要的圖(圖中上段)、以及用於說明與第一程序不同之用於形成支撐片材12的第二程序的概要的圖(圖中中段)。Shown in FIG. 3 is a diagram (upper part of the figure) for explaining the outline of the first process for forming the support sheet 12 in this embodiment, and for explaining the difference from the first process for forming the support A diagram of the outline of the second program of the sheet 12 (middle section in the figure).

首先，說明圖3之圖中上段所示之第一程序，支撐片材12是藉由用於支撐透明板10的透明片材40、與預先形成為圓形狀之薄膜的反射膜50所形成。透明片材40是具有透光性與柔軟性之透明的片材，且可以採用自例如藉由加熱至熔融溫度附近而發揮黏著性之聚烯烴系片材、或聚酯系片材。透明片材40具備支撐透明板10的正面40a(在圖中為朝向下方)、與可積層反射膜50的背面40b。反射膜50可由例如供光良好地反射之薄膜(例如鋁薄膜(鋁箔))所構成。反射膜50是以和透明板10相同的直徑或稍大的尺寸所形成，並在透明片材40之背面40b側定位於被外周區域44所圍繞之以圖中一點鏈線所示之中央區域42，並藉由未圖示之加熱滾輪等加熱及按壓來貼附到透明片材40，而成為如圖中下段所示之支撐片材12。再者，反射膜50並不限定於上述鋁薄膜，亦可為例如其他金屬製之薄膜、或塗附有金屬色的塗料之圓形的紙片。反射膜50是將供光良好地反射之側朝向透明片材40的背面40b來進行貼附。First, the first process shown in the upper part of the figure of FIG. 3 will be described. The supporting sheet 12 is formed by the transparent sheet 40 for supporting the transparent plate 10 and the reflective film 50 preliminarily formed as a circular thin film. The transparent sheet 40 is a transparent sheet having light transmittance and flexibility, and can be used, for example, from a polyolefin-based sheet or a polyester-based sheet that exhibits adhesiveness by heating to near the melting temperature. The transparent sheet 40 includes a front surface 40 a (facing downward in the figure) that supports the transparent plate 10 and a back surface 40 b on which the reflective film 50 can be laminated. The reflective film 50 may be composed of, for example, a thin film (such as an aluminum thin film (aluminum foil)) for good reflection of light. The reflective film 50 is formed with the same diameter or a slightly larger size as the transparent plate 10, and is positioned on the back 40b side of the transparent sheet 40 in the central area surrounded by the outer peripheral area 44 as shown by a single chain line in the figure 42. It is attached to the transparent sheet 40 by heating and pressing by heating rollers not shown in the figure, and becomes the supporting sheet 12 as shown in the lower part of the figure. Furthermore, the reflective film 50 is not limited to the above-mentioned aluminum thin film, and may be, for example, a thin film made of other metals, or a circular paper sheet coated with a metallic paint. The reflective film 50 is attached with the side for reflecting light well toward the back surface 40b of the transparent sheet 40.

在圖3的圖中中段，顯示有用於形成支撐片材12的其他程序即第二程序。在第二程序中，於準備上述之透明片材40後，將塗佈金屬色(金色、銀色等)塗料52之噴嘴55定位到背面40b之中央區域42的上方，並朝向中央區域42噴射金屬色塗料52來積層反射膜52’。再者，此時，是對圍繞中央區域42的外周區域44預先貼附適當的遮罩用片材，並於完成對中央區域42之金屬色塗料52的噴射後，去除該遮罩用片材。藉由此第二程序，也可以形成在透明片材40之背面40b的中央區域42上積層有供光良好地反射之反射膜52’的支撐片材12。又，在此第二程序中，在中央區域42塗佈金屬色塗料52時，並不一定限定為從噴嘴55噴射金屬色塗料52之作法，亦可為藉由塗裝用的海棉滾輪等來塗裝之構成。In the middle part of the drawing of FIG. 3, another procedure for forming the support sheet 12, that is, the second procedure is shown. In the second process, after preparing the above-mentioned transparent sheet 40, the nozzle 55 for coating the metallic color (gold, silver, etc.) paint 52 is positioned above the central area 42 of the back 40b, and the metal is sprayed toward the central area 42 The color paint 52 is used to laminate the reflective film 52'. In addition, at this time, an appropriate mask sheet is attached to the outer peripheral area 44 surrounding the central area 42 in advance, and after spraying of the metallic paint 52 on the central area 42 is completed, the mask sheet is removed . By this second process, it is also possible to form the support sheet 12 in which the reflective film 52' for good reflection of light is laminated on the central area 42 of the back surface 40b of the transparent sheet 40. In addition, in this second process, when the metallic paint 52 is applied to the central area 42, it is not necessarily limited to spraying the metallic paint 52 from the nozzle 55, and it may be a sponge roller for painting. To paint the composition.

在採用適合於熱壓接之聚烯烴系片材來作為上述之透明片材40的情況下，可以選自於聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一種。又，在採用適合於熱壓接之聚酯系片材來作為透明片材40的情況下，可以選自於聚對苯二甲酸乙二酯片材、或聚萘二甲酸乙二酯片材。再者，上述之透明片材40，並不限定於聚烯烴系片材、聚酯系片材，亦可為在表面塗附有由糊劑等所構成之黏著劑的一般的切割膠帶，例如可為聚氯乙烯(PVC)之片材。In the case of using a polyolefin-based sheet suitable for thermocompression bonding as the above-mentioned transparent sheet 40, it may be selected from any one of a polyethylene sheet, a polypropylene sheet, and a polystyrene sheet. In addition, in the case of using a polyester-based sheet suitable for thermocompression bonding as the transparent sheet 40, it may be selected from a polyethylene terephthalate sheet or a polyethylene naphthalate sheet . Furthermore, the above-mentioned transparent sheet 40 is not limited to a polyolefin-based sheet or a polyester-based sheet, and may be a general dicing tape coated with an adhesive composed of a paste or the like on the surface, such as It can be a sheet of polyvinyl chloride (PVC).

預先準備上述之支撐片材12，而實施以下之支撐步驟：將支撐片材12的正面(透明片材40的正面40a側)定位並支撐在已藉由上述之溝形成步驟而形成有半切溝100之透明板10的正面10a。一邊參照圖4一邊更具體地說明該支撐步驟。The above-mentioned supporting sheet 12 is prepared in advance, and the following supporting step is carried out: the front surface of the supporting sheet 12 (the front surface 40a side of the transparent sheet 40) is positioned and supported on the half-cut groove formed by the above-mentioned groove forming step 100 of the front surface 10a of the transparent plate 10. This supporting step will be described in more detail while referring to FIG. 4.

在實施該支撐步驟之時，準備如圖4(a)所示之具備有平坦面62的膠帶黏貼台60。在平坦面62上的中央，將藉由上述溝形成步驟而形成有半切溝100之透明板10的正面10a側設成上方來載置。此外，在平坦面62上，將透明板10於形成有可容置透明板10之大小的開口Fa的環狀的框架F中定位並載置於開口Fa的中央位置。When performing this supporting step, the tape application stand 60 provided with the flat surface 62 as shown in FIG. 4(a) is prepared. In the center on the flat surface 62, the front surface 10a side of the transparent plate 10 on which the half-cut groove 100 was formed by the above-mentioned groove formation process is set upwards, and it mounts. In addition, on the flat surface 62, the transparent plate 10 is positioned in a ring-shaped frame F formed with an opening Fa of the size of the transparent plate 10 and placed at the center of the opening Fa.

如圖4(a)所示，將透明板10及框架F載置於膠帶黏貼台60的平坦面62上之後，即相對於透明板10的正面10a將上述之支撐片材12的正面(透明片材40的正面40a側)朝向下方，而將與已積層於背面(透明片材40的背面40b)之反射膜50(52’)相對應的區域定位並載置到透明板10，並以未圖示之滾輪等來壓接。支撐片材12是以比框架F的開口Fa稍微大的尺寸所形成，並將支撐片材12的外緣貼附於框架F，且將支撐片材12之與積層有反射膜50(52’)的區域相對應的區域貼附於透明板10的正面10a。藉由以上，將透明板10支撐於支撐片材12的支撐步驟即完成。如此進行而將透明板10支撐於支撐片材12及框架F之後，即可如圖4(b)所示，使上下(正面、背面)翻轉，而成為將透明板10之背面10b露出於上方之狀態。As shown in Figure 4(a), after the transparent plate 10 and the frame F are placed on the flat surface 62 of the tape sticking table 60, the front surface (transparent) of the support sheet 12 is placed relative to the front surface 10a of the transparent plate 10 The front surface 40a side of the sheet material 40 faces downward, and the area corresponding to the reflective film 50 (52') that has been laminated on the back surface (the back surface 40b of the transparent sheet material 40) is positioned and placed on the transparent plate 10, and Crimping with rollers not shown in the figure. The supporting sheet 12 is formed with a size slightly larger than the opening Fa of the frame F, and the outer edge of the supporting sheet 12 is attached to the frame F, and the supporting sheet 12 is laminated with a reflective film 50 (52' The area corresponding to the area of) is attached to the front surface 10a of the transparent plate 10. Through the above, the supporting step of supporting the transparent plate 10 on the supporting sheet 12 is completed. In this way, after the transparent plate 10 is supported on the supporting sheet 12 and the frame F, as shown in FIG. 4(b), the upper and lower sides (front and back) can be turned upside down to expose the back 10b of the transparent plate 10 above. The state.

已完成上述之支撐步驟之後，即可實施切割步驟，前述切割步驟是從透明板10的背面10b對與已形成於正面10a的半切溝100相對應的區域進行切割。為了實施該切割步驟，而將透明板10搬送到圖5所示之切割裝置20(僅顯示一部分)，並載置於工作夾台22來進行吸引保持，並且藉由夾具26來固定框架F。After the above supporting step has been completed, the cutting step can be implemented. The cutting step is to cut the area corresponding to the half-cut groove 100 formed on the front surface 10a from the back surface 10b of the transparent plate 10. In order to implement this cutting step, the transparent plate 10 is transported to the cutting device 20 shown in FIG. 5 (only part of which is shown), and placed on the work clamp table 22 for suction and holding, and the frame F is fixed by the clamp 26.

當將透明板10保持在工作夾台22之後，即可實施檢測步驟，前述檢測步驟是作為切割步驟的一部分而實施之步驟，且是從透明板10的背面10b側檢測半切溝100之步驟。在實施檢測步驟之時，是使用配設於切割裝置20之圖5所示之拍攝機構70。拍攝機構70包含照射可見光線而於工作夾台22上進行拍攝之拍攝元件(CCD)(省略圖示)，且連接於控制機構80。After the transparent plate 10 is held on the work clamp 22, the inspection step can be performed. The aforementioned inspection step is a step implemented as a part of the cutting step, and is a step of detecting the half-cut groove 100 from the back 10b side of the transparent plate 10. When the detection step is performed, the imaging mechanism 70 shown in FIG. 5, which is provided in the cutting device 20, is used. The photographing mechanism 70 includes a photographing element (CCD) (not shown) for irradiating visible light to photograph on the work clamp table 22, and is connected to the control mechanism 80.

控制機構80是由電腦所構成，並具備有依照控制程式進行運算處理之中央運算處理裝置(CPU)、保存控制程式等之唯讀記憶體(ROM)、用於暫時保存從拍攝機構70所傳送來的資訊、或運算結果等之可讀寫的隨機存取記憶體(RAM)、輸入介面、及輸出介面(省略了有關細節的圖示)。對控制機構80的輸出介面連接有用於適當顯示加工資訊等的顯示機構90。藉由拍攝機構70所檢測的半切溝100之資訊是傳送至控制機構80。在控制機構80中，可以對藉由拍攝機構70所拍攝到的半切溝100的位置資訊進行運算，而進行與後述之切割機構30的切割刀片的對位(校準)。藉由拍攝機構70所檢測出的資訊，可適當儲存到控制機構80的記憶體(RAM)，並且顯示到顯示機構90。The control mechanism 80 is composed of a computer, and is equipped with a central processing unit (CPU) that performs arithmetic processing in accordance with a control program, a read-only memory (ROM) that saves the control program, etc., and is used to temporarily store data transmitted from the shooting mechanism 70 Random access memory (RAM), input interface, and output interface that can read and write information, or calculation results, etc. (the relevant details are omitted). A display mechanism 90 for appropriately displaying processing information and the like is connected to the output interface of the control mechanism 80. The information of the half-cut groove 100 detected by the photographing mechanism 70 is sent to the control mechanism 80. In the control mechanism 80, the position information of the half-cut groove 100 photographed by the photographing mechanism 70 can be calculated to perform alignment (calibration) with the cutting blade of the cutting mechanism 30 described later. The information detected by the imaging mechanism 70 can be appropriately stored in the memory (RAM) of the control mechanism 80 and displayed on the display mechanism 90.

在藉由拍攝機構70對已形成於透明板10的正面10a的半切溝100進行檢測時，是作動未圖示的移動機構，而將已保持在工作夾台22的透明板10定位到拍攝機構70的正下方。將透明板10定位到拍攝機構70的正下方後，即從拍攝機構70朝向透明板10照射可見光線(照明光)，並且藉由拍攝元件(CCD)來對透明板10的背面10b進行拍攝。在此，如上述，在本實施形態中所使用之透明板10及構成支撐片材12的透明片材40是透明的，且在透明片材40之背面40b的中央區域，亦即在支撐有透明板10的區域積層有供光良好地反射的反射膜50(52’)。藉此，從拍攝機構70所照射出之照明光穿透透明板10及透明片材40而在反射膜50(52’)反射，並在形成於透明板10的正面10a側的半切溝100的側面及底面漫反射。藉此，如圖5所示之顯示機構90所顯示地，可以在透明板10的背面10b側正確地掌握是否顯現有半切溝100，且半切溝100位於切割裝置20上的哪個座標位置。藉由如此進行而實施檢測步驟，可將半切溝100之方向、及座標位置正確地特定，並儲存到控制機構80的記憶體。When the half-cut groove 100 formed on the front surface 10a of the transparent plate 10 is detected by the imaging mechanism 70, a moving mechanism (not shown) is actuated to position the transparent plate 10 held on the work chuck 22 to the imaging mechanism 70 directly below. After the transparent plate 10 is positioned directly below the imaging mechanism 70, visible light (illumination light) is irradiated from the imaging mechanism 70 toward the transparent plate 10, and the back surface 10b of the transparent plate 10 is photographed by the imaging device (CCD). Here, as described above, the transparent plate 10 and the transparent sheet 40 constituting the support sheet 12 used in the present embodiment are transparent, and are located in the central area of the back surface 40b of the transparent sheet 40, that is, the support The area of the transparent plate 10 is laminated with a reflective film 50 (52') for good reflection of light. Thereby, the illumination light irradiated from the imaging mechanism 70 penetrates the transparent plate 10 and the transparent sheet 40, is reflected on the reflective film 50 (52'), and is formed on the half-cut groove 100 on the front side 10a of the transparent plate 10. Diffuse reflection on the sides and bottom. As a result, as shown by the display mechanism 90 shown in FIG. 5, it is possible to accurately grasp whether the existing half-cut groove 100 is displayed on the back side 10b of the transparent plate 10 and which coordinate position on the cutting device 20 the half-cut groove 100 is located at. By performing the detection step in this way, the direction and coordinate position of the half-cut groove 100 can be accurately specified and stored in the memory of the control mechanism 80.

在實施了上述之檢測步驟後，即可移動工作夾台22，並將透明板10定位到圖6(a)所示之切割機構30的正下方。再者，圖6(a)所示之切割機構30雖然是在實施溝形成步驟之時所使用的切割機構30，但在本實施形態中，是移除在該溝形成步驟中所使用的切割刀片36A而更換成具有比半切溝100之溝寬更寬的厚度(例如100μm的厚度)的切割刀片36B。如上述，已將透明板10定位到切割機構30的正下方之後，即可依據已儲存於控制機構80之半切溝100的位置資訊，而如圖6(b)所示地從透明板10的背面10b將切割刀片36B定位到對應於半切溝100的區域且到達半切溝100的深度。然後，一面使切割刀片36B朝箭頭R所示之方向以例如30000rpm的旋轉速度旋轉，一面使工作夾台22朝X軸方向移動，來對與已形成於正面10a之半切溝100相對應的區域進行切割，而形成分割溝110。如此進行而藉由半切溝100與分割溝110來將透明板10完全地分割。此外，使工作夾台22及主軸單元32相對地移動，而在與已形成於透明板10的正面10a之全部的半切溝100相對應的區域形成上述之分割溝110。藉由以上，完成切割步驟，而如圖7所示地將透明板10分割成複數個晶片10’。After the above-mentioned detection steps are implemented, the work clamp table 22 can be moved, and the transparent plate 10 can be positioned directly below the cutting mechanism 30 shown in FIG. 6(a). Furthermore, although the cutting mechanism 30 shown in FIG. 6(a) is the cutting mechanism 30 used in the groove forming step, in this embodiment, the cutting mechanism 30 used in the groove forming step is removed. The blade 36A is replaced with a cutting blade 36B having a thickness wider than the groove width of the half-cut groove 100 (for example, a thickness of 100 μm). As mentioned above, after the transparent plate 10 has been positioned directly below the cutting mechanism 30, the position information of the half-cut groove 100 that has been stored in the control mechanism 80 can be used, as shown in FIG. 6(b). The back surface 10b positions the cutting blade 36B to a region corresponding to the half-cut groove 100 and reaches the depth of the half-cut groove 100. Then, while the cutting blade 36B is rotated in the direction indicated by the arrow R at a rotation speed of, for example, 30000 rpm, the work chuck table 22 is moved in the X-axis direction to align the area corresponding to the half-cut groove 100 formed on the front surface 10a. The cutting is performed to form the dividing groove 110. In this way, the transparent plate 10 is completely divided by the half-cut groove 100 and the dividing groove 110. In addition, the work chuck table 22 and the spindle unit 32 are relatively moved, and the above-mentioned dividing groove 110 is formed in an area corresponding to all the half-cut grooves 100 formed on the front surface 10 a of the transparent plate 10. With the above, the dicing step is completed, and the transparent plate 10 is divided into a plurality of wafers 10' as shown in Fig. 7.

在本實施形態之切割步驟中，是藉由如上述地更換成厚度比藉由具有50μm之厚度的切割刀片36A所形成的半切溝100之溝寬更寬(100μm)的切割刀片36B來實施切割加工，而如圖6(b)所示，在各晶片的側面形成落差部112。藉由將此落差部112形成在一個個的晶片10’的外周，可以使晶片10’作為例如適合於將具有微小之矩形狀之開口的凹部堵塞的蓋構件而發揮功能。又，形成這種落差部112的情況，並不一定限定為藉由厚度比半切溝100的溝寬更寬之切割刀片36B來實施切割步驟之作法。即使藉由例如將實施形成半切溝100之溝形成步驟時的切割刀片36A的厚度設為100μm，且將實施從背面10b側對與半切溝100相對應之區域進行切割時之切割步驟時的切割刀片36B的厚度設為50μm，雖然上下的方向會變得相反，仍然可形成與上述同樣的落差部112。In the cutting step of this embodiment, the cutting is performed by replacing the cutting blade 36B with a width (100 μm) wider than the half-cut groove 100 formed by the cutting blade 36A having a thickness of 50 μm as described above. Processing, and as shown in FIG. 6(b), a step 112 is formed on the side surface of each wafer. By forming the drop portion 112 on the outer periphery of the individual wafers 10', the wafer 10' can be made to function as a cover member suitable for closing a recessed portion having a minute rectangular opening, for example. In addition, the formation of such a drop portion 112 is not necessarily limited to a method in which the cutting blade 36B having a thickness wider than the groove width of the half-cut groove 100 is used to perform the cutting step. Even if, for example, the thickness of the cutting blade 36A when the groove forming step for forming the half-cut groove 100 is performed is 100 μm, and the cutting step is performed when the area corresponding to the half-cut groove 100 is cut from the back surface 10b side. The thickness of the blade 36B is set to 50 μm, and although the vertical direction becomes reversed, the same drop portion 112 as described above can be formed.

10:透明板 10’:晶片 10a,40a:正面 10b,40b:背面 12:支撐片材 20:切割裝置 22:工作夾台 24:吸附夾頭 26:夾具 30:切割機構 32:主軸單元 34:旋轉主軸 36A,36B:切割刀片 38:刀片蓋 40:透明片材 50,52’:反射膜 52:金屬色塗料 55:噴嘴 60:膠帶黏貼台 62:平坦面 70:拍攝機構 80:控制機構 90:顯示機構 100:半切溝 110:分割溝 112:落差部 X,Y,Z,R:箭頭10: Transparent board 10’: Chip 10a, 40a: front 10b, 40b: back 12: Support sheet 20: Cutting device 22: work clamp 24: Adsorption Chuck 26: Fixture 30: Cutting mechanism 32: Spindle unit 34: Rotating spindle 36A, 36B: cutting blade 38: Blade cover 40: transparent sheet 50,52’: reflective film 52: Metallic paint 55: Nozzle 60: Tape sticking table 62: flat surface 70: shooting agency 80: control mechanism 90: display organization 100: Half-cut groove 110: segmentation groove 112: Drop X, Y, Z, R: arrow

圖1是顯示在實施本實施形態之溝形成步驟時，使支撐機構支撐透明板的態樣的立體圖。 圖2是顯示溝形成步驟之實施態樣的立體圖。 圖3是顯示形成支撐片材之第一程序、及第二程序的立體圖。 圖4是顯示支撐步驟的實施態樣的立體圖。 圖5是顯示檢測半切溝之檢測步驟的實施態樣的立體圖。 圖6是顯示切割步驟的實施態樣的立體圖。 圖7是已藉由本實施形態而分割成一個個的晶片的透明板的立體圖。Fig. 1 is a perspective view showing a state in which a supporting mechanism supports a transparent plate when performing the groove forming step of the present embodiment. Fig. 2 is a perspective view showing an implementation aspect of a groove forming step. Fig. 3 is a perspective view showing a first process and a second process of forming a support sheet. Fig. 4 is a perspective view showing an implementation aspect of a supporting step. Fig. 5 is a perspective view showing an implementation aspect of a detection step of detecting a half-cut groove. Fig. 6 is a perspective view showing an implementation aspect of the cutting step. Fig. 7 is a perspective view of the transparent plate of the wafers that have been divided into individual wafers according to the present embodiment.

12:支撐片材 12: Support sheet

40:透明片材 40: transparent sheet

40a:正面 40a: front

40b:背面 40b: back

42:中央區域 42: Central area

44:外周區域 44: Peripheral area

50,52’:反射膜 50,52’: reflective film

52:金屬色塗料 52: Metallic paint

55:噴嘴 55: Nozzle

Claims (5)

一種支撐片材，是支撐被加工物，前述支撐片材至少是由以下所構成： 透明片材，具有支撐被加工物的正面；及 反射膜，積層於該透明片材的背面。A supporting sheet is used to support a processed object, and the aforementioned supporting sheet is at least composed of the following: A transparent sheet with a front surface that supports the object to be processed; and The reflective film is laminated on the back of the transparent sheet. 如請求項1之支撐片材，其中該透明片材為聚烯烴系片材、聚酯系片材的任一種。The support sheet according to claim 1, wherein the transparent sheet is any one of a polyolefin-based sheet and a polyester-based sheet. 如請求項1或2之支撐片材，其中該反射膜包含鋁薄膜、金屬色塗料的任一種。The support sheet of claim 1 or 2, wherein the reflective film comprises any one of aluminum thin film and metallic paint. 一種透明板之加工方法，至少包含以下步驟： 溝形成步驟，將切割刀片定位於透明板的正面來進行切割，而形成未到達背面的複數條半切溝； 支撐步驟，將請求項1至3中任一項之支撐片材的正面定位並支撐於透明板的正面；及 切割步驟，將切割刀片定位於透明板的背面來對與已形成於正面的該半切溝相對應的區域進行切割， 又，在該切割步驟中包含從透明板的背面檢測形成於正面的該半切溝之檢測步驟。A processing method of transparent board includes at least the following steps: In the groove forming step, the cutting blade is positioned on the front side of the transparent plate for cutting, and a plurality of half-cut grooves that do not reach the back side are formed; The supporting step is to position and support the front surface of the supporting sheet of any one of claims 1 to 3 on the front surface of the transparent plate; and In the cutting step, the cutting blade is positioned on the back side of the transparent plate to cut the area corresponding to the half-cut groove formed on the front side, In addition, the cutting step includes a detection step of detecting the half-cut groove formed on the front surface from the back surface of the transparent plate. 如請求項4之透明板之加工方法，其中在該切割步驟中，是使用寬度比已形成於透明板的正面的該半切溝的寬度更寬、或更窄的切割刀片，來從透明板的背面形成到達該半切溝的深度之溝而分割成複數個晶片。For example, the processing method of the transparent plate of claim 4, wherein in the cutting step, a cutting blade with a width wider or narrower than the width of the half-cut groove formed on the front surface of the transparent plate is used to remove the transparent plate A groove reaching the depth of the half-cut groove is formed on the back surface to be divided into a plurality of wafers.
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