JP7306859B2 - Processing method of transparent plate - Google Patents

Processing method of transparent plate Download PDF

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JP7306859B2
JP7306859B2 JP2019073928A JP2019073928A JP7306859B2 JP 7306859 B2 JP7306859 B2 JP 7306859B2 JP 2019073928 A JP2019073928 A JP 2019073928A JP 2019073928 A JP2019073928 A JP 2019073928A JP 7306859 B2 JP7306859 B2 JP 7306859B2
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transparent plate
sheet
cutting
cut
transparent
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JP2020171976A (en
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逸人 木内
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Disco Corp
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Disco Corp
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Priority to KR1020200035508A priority patent/KR20200119193A/en
Priority to TW109111027A priority patent/TW202109730A/en
Priority to CN202010248823.1A priority patent/CN111799208A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/24—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising with cutting discs
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Description

本発明は、被加工物を支持する支持シート、及び該支持シートを用いた透明板の加工方法に関する。 The present invention relates to a support sheet for supporting an object to be processed, and a transparent plate processing method using the support sheet.

ＩＣ、ＬＳＩ等の複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハは、切削ブレードを回転可能に備えた切削装置によって個々のデバイスチップに分割され携帯電話、パソコン等の電気機器に利用される。 A wafer in which a plurality of devices such as ICs and LSIs are partitioned by division lines and formed on the surface thereof is divided into individual device chips by a cutting device equipped with a rotatable cutting blade, which is then used in electrical equipment such as mobile phones and personal computers. used.

また、ウエーハの表面に裏面に至らない深さのハーフカット溝を形成した後、裏面側から赤外線カメラによってハーフカット溝を検出し、ウエーハの裏面から切削ブレードを該ハーフカット溝に至る深さに位置付けて切削しウエーハを個々のチップに分割する技術が出願人によって提案されている（特許文献１を参照）。 In addition, after forming a half-cut groove with a depth that does not reach the back surface of the wafer, the half-cut groove is detected from the back surface side by an infrared camera, and the cutting blade is moved from the back surface of the wafer to a depth that reaches the half-cut groove. The applicant has proposed a technique of positioning and cutting to divide a wafer into individual chips (see Patent Document 1).

特開平０６－２３２２５５号公報JP-A-06-232255

ところで、特許文献１に記載された技術に基づいて、ガラスの如く透明板からなる被加工物の表面にハーフカット溝を形成した後、裏面側から撮像装置を用いたアライメント手段によって表面に形成されたハーフカット溝を検出しようとする場合、被加工物全体が透明であることにより、ハーフカット溝が形成された領域とその他の領域の境界を明確に検出することができず、該ハーフカット溝に沿って正確に裏面側から切削することが困難であるという問題がある。 By the way, based on the technique described in Patent Document 1, after half-cut grooves are formed on the surface of a workpiece made of a transparent plate such as glass, half-cut grooves are formed on the surface from the back side by alignment means using an imaging device. When trying to detect a half-cut groove, the boundary between the area where the half-cut groove is formed and other areas cannot be clearly detected due to the transparency of the entire workpiece, and the half-cut groove There is a problem that it is difficult to cut from the back side accurately along the line.

本発明は、上記事実に鑑みなされたものであり、その主たる技術課題は、透明板からなる被加工物の表面にハーフカット溝を形成した後、裏面側から表面に形成されたハーフカット溝を検出するのに好適な支持シート、及び該支持シートを用いた透明板の加工方法を提供することにある。 The present invention has been made in view of the above facts, and its main technical problem is to form half-cut grooves on the surface of a workpiece made of a transparent plate, and then cut the half-cut grooves formed on the front surface from the back side. An object of the present invention is to provide a support sheet suitable for detection and a method for processing a transparent plate using the support sheet.

本発明によれば、透明板の表面に切削ブレードを位置付けて切削し裏面に至らない複数のハーフカット溝を形成する溝形成工程と、透明板を支持する表面を有する透明シートと、該透明シートの裏面に積層された反射膜とを有する支持シートの該反射膜が形成された領域に対応する表面を該ハーフカット溝が形成された透明板の表面に位置付けて支持する支持工程と、透明板の裏面に切削ブレードを位置づけて表面に形成された該ハーフカット溝に対応する領域を切削する切削工程と、を少なくとも含み、該切削工程には、該ハーフカット溝に対応する領域を切削する前に透明板の裏面から表面に形成された該ハーフカット溝を検出する検出工程が含まれる透明板の加工方法が提供される。 According to the present invention, a groove forming step of positioning a cutting blade on the surface of a transparent plate and cutting to form a plurality of half-cut grooves that do not reach the back surface, a transparent sheet having a surface supporting the transparent plate, and the transparent sheet a supporting step of positioning and supporting a surface of a supporting sheet having a reflective film laminated on the back surface of the support sheet corresponding to the region where the reflective film is formed on the surface of the transparent plate in which the half-cut grooves are formed; and a cutting step of positioning a cutting blade on the back surface of the and cutting the region corresponding to the half-cut groove formed on the front surface, and the cutting step includes before cutting the region corresponding to the half-cut groove ( 1 ) a transparent plate processing method including a detection step of detecting the half-cut grooves formed from the back surface to the front surface of the transparent plate.

該切削工程において、透明板の表面に形成された該ハーフカット溝の幅より広い、又は狭い幅の切削ブレードを用い、透明板の裏面から該ハーフカット溝に至る深さの溝を形成して複数のチップに分割することができる。該透明シートは、ポリオレフィン系シート、ポリエステル系シートのいずれかであることが好ましい。また、該反射膜は、アルミニウム薄膜、金属色塗料、のいずれかを含むことが好ましい。 In the cutting step, a cutting blade having a width wider or narrower than the width of the half-cut groove formed on the surface of the transparent plate is used to form a groove with a depth from the back surface of the transparent plate to the half-cut groove. Can be split into multiple chips. The transparent sheet is preferably either a polyolefin sheet or a polyester sheet. Moreover, it is preferable that the reflective film includes either an aluminum thin film or a metallic color paint.

本発明の透明板の加工方法は、透明板の表面に切削ブレードを位置付けて切削し裏面に至らない複数のハーフカット溝を形成する溝形成工程と、透明板を支持する表面を有する透明シートと、該透明シートの裏面に積層された反射膜とを有する支持シートの該反射膜が形成された領域に対応する表面を該ハーフカット溝が形成された透明板の表面に位置付けて支持する支持工程と、透明板の裏面に切削ブレードを位置づけて表面に形成された該ハーフカット溝に対応する領域を切削する切削工程と、を少なくとも含み、該切削工程には、該ハーフカット溝に対応する領域を切削する前に透明板の裏面から表面に形成された該ハーフカット溝を検出する検出工程が含まれることにより、表面に形成されたハーフカット溝の側面及び底面に該反射膜にて反射した光が乱反射して、裏面側から、表面に形成されたハーフカット溝を明確に検出することができる。 The transparent plate processing method of the present invention includes a groove forming step of positioning a cutting blade on the surface of the transparent plate to cut the surface of the transparent plate to form a plurality of half-cut grooves that do not reach the back surface, and a transparent sheet having a surface that supports the transparent plate. and a supporting step of positioning and supporting the surface of a supporting sheet having a reflective film laminated on the back surface of the transparent sheet, corresponding to the region where the reflective film is formed, on the surface of the transparent plate having the half-cut grooves formed thereon. and a cutting step of positioning a cutting blade on the back surface of the transparent plate to cut a region corresponding to the half-cut groove formed on the front surface, wherein the cutting step includes a region corresponding to the half-cut groove. By including a detection step of detecting the half-cut grooves formed on the front surface from the back surface of the transparent plate before cutting , the light reflected by the reflective film on the side and bottom surfaces of the half-cut grooves formed on the surface The half-cut grooves formed on the front surface can be clearly detected from the rear surface side due to the irregular reflection of the light.

本実施形態の溝形成工程を実施するに際して透明板を支持手段に支持させる態様を示す斜視図である。FIG. 4 is a perspective view showing a mode in which the transparent plate is supported by support means when carrying out the groove forming step of the present embodiment; 溝形成工程の実施態様を示す斜視図である。It is a perspective view which shows the embodiment of a groove|channel formation process. 支持シートを形成する第一の手順、及び第二の手順を示す斜視図である。It is a perspective view which shows the 1st procedure and 2nd procedure which form a support sheet. 支持工程の実施態様を示す斜視図である。It is a perspective view which shows the embodiment of a support process. ハーフカット溝を検出する検出工程の実施態様を示す斜視図である。FIG. 10 is a perspective view showing an embodiment of a detection process for detecting half-cut grooves; 切削工程の実施態様を示す斜視図である。FIG. 4 is a perspective view showing an embodiment of a cutting process; 本実施形態によって個々のチップに分割された透明板の斜視図である。FIG. 4 is a perspective view of a transparent plate divided into individual chips according to the embodiment;

以下、本発明に基づき構成された透明板の加工方法に係る実施形態について添付図面を参照しながら詳細に説明すると共に、該透明板の加工方法に好適な支持シートについて説明する。 BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a transparent plate processing method constructed based on the present invention will be described in detail below with reference to the accompanying drawings, and a support sheet suitable for the transparent plate processing method will be described.

本実施形態の透明板の加工方法を実施するに際し、まず、図１に示すように、被加工物となる透明板１０を用意する。透明板１０は、ガラスの如く透明な円形状の板状物であり、ガラス基板の他、例えば、サファイア、リチウムタンタレート（ＬｉＴａＯ３）、リチウムナイオベート（ＬｉＮｂＯ３）等を板状物にしたものであってよく、特に限定されるものではない。 When carrying out the transparent plate processing method of the present embodiment, first, as shown in FIG. 1, a transparent plate 10 to be processed is prepared. The transparent plate 10 is a transparent circular plate like glass, and is made of a glass substrate, for example, sapphire, lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), or the like. It may be anything, and is not particularly limited.

透明板１０を用意したならば、図１に示す切削装置２０（一部のみ示す）に搬送し、切削装置２０に配設されたチャックテーブル２２上に載置する。チャックテーブル２２の上面は、通気性を有するポーラスセラミックスからなる吸着チャック２４により構成されており、図示しない吸引手段に接続されている。また、本実施形態のチャックテーブル２２の外周には、被加工物が、後述する支持シートを介して環状のフレームに支持されている場合に、該フレームを支持するためのクランプ２６が周方向に均等な間隔で４つ配設されている。 After the transparent plate 10 is prepared, it is transported to the cutting device 20 (only a part of which is shown) shown in FIG. The upper surface of the chuck table 22 is composed of a suction chuck 24 made of porous ceramics having air permeability, and is connected to suction means (not shown). Further, on the outer periphery of the chuck table 22 of the present embodiment, a clamp 26 for supporting an annular frame is provided in the circumferential direction when the workpiece is supported by an annular frame via a support sheet, which will be described later. Four of them are evenly spaced.

チャックテーブル２２に透明板１０を載置して、図示しない吸引手段を作動させることによりチャックテーブル２２の吸着チャック２４上に透明板１０を吸引保持する。ここで、チャックテーブル２２に吸引保持された透明板１０の上方に露出する側を表面１０ａとして、反対側（下方側）を裏面１０ｂとする。透明板１０をチャックテーブル２２に吸引保持したならば、透明板１０の表面１０ａに切削ブレードを位置付けて切削して裏面１０ｂに至らない複数のハーフカット溝を形成する溝形成工程を実施する。該溝形成工程について、図２を参照しながらより具体的に説明する。 By placing the transparent plate 10 on the chuck table 22 and operating a suction means (not shown), the transparent plate 10 is suction-held on the suction chuck 24 of the chuck table 22 . Here, the side exposed upward of the transparent plate 10 sucked and held by the chuck table 22 is defined as a front surface 10a, and the opposite side (lower side) is defined as a back surface 10b. After the transparent plate 10 is suction-held on the chuck table 22, a groove forming step is performed in which a cutting blade is positioned on the front surface 10a of the transparent plate 10 and cut to form a plurality of half-cut grooves that do not reach the rear surface 10b. The groove forming step will be described in more detail with reference to FIG.

切削装置２０には、図２（ａ）に示すように、溝形成工程を実施するための切削手段３０が配設されている。切削手段３０は、スピンドルユニット３２を備えている。スピンドルユニット３２は、図示しないモータによって回転駆動される回転スピンドル３４と、回転スピンドル３４の先端部に固定され外周に切り刃を有する例えば５０μｍの厚みを有する切削ブレード３６Ａと、切削ブレード３６Ａを保護するブレードカバー３８とを備えており、図示しない移動手段によって矢印Ｙで示すＹ軸方向、及び矢印Ｚで示すＺ軸方向に移動可能に構成されている。 As shown in FIG. 2A, the cutting device 20 is provided with cutting means 30 for performing the groove forming process. The cutting means 30 has a spindle unit 32 . The spindle unit 32 includes a rotating spindle 34 that is rotationally driven by a motor (not shown), a cutting blade 36A that is fixed to the tip of the rotating spindle 34 and has a cutting edge on the outer periphery and has a thickness of, for example, 50 μm, and protects the cutting blade 36A. The blade cover 38 is movable in the Y-axis direction indicated by arrow Y and in the Z-axis direction indicated by arrow Z by moving means (not shown).

チャックテーブル２２上に透明板１０を保持したならば、所定の加工開始位置であって、透明板１０の裏面１０ｂに至らない深さ位置に切削ブレード３６Ａを位置付け、切削ブレード３６Ａを所定の回転速度（たとえば、３０，０００ｒｐｍ）で回転させると共に、図示しない移動手段を作動し、チャックテーブル２２を矢印Ｘで示すＸ軸方向に移動させて、表面１０ａ側から裏面１０ｂに至らない深さのハーフカット溝１００を形成する（図２（ｂ）を参照）。Ｘ軸方向に沿って一本目のハーフカット溝１００を形成したならば、スピンドルユニット３２を図示しない移動手段によりＺ軸方向に上昇させると共にＹ軸方向に移動し、所定の間隔をおいてさらにハーフカット溝１００を形成する。これを繰り返すことにより、透明板１０の表面１０ａ上全域の所定の方向に、所定の間隔で複数のハーフカット溝１００を形成する。その後、図示しない回転駆動手段を作動してチャックテーブル２２を９０°回転させて、先に形成した複数のハーフカット溝１００と直交する方向に、上記と同様の手順により、所定の間隔で複数のハーフカット溝１００を形成し、表面１０ａ上の全域に格子状にハーフカット溝１００を形成する（必要であれば、図４（ａ）を参照）。以上により、溝形成工程が完了する。 After holding the transparent plate 10 on the chuck table 22, the cutting blade 36A is positioned at a predetermined processing start position and at a depth position not reaching the back surface 10b of the transparent plate 10, and the cutting blade 36A is rotated at a predetermined rotational speed. (for example, 30,000 rpm), a moving means (not shown) is operated, and the chuck table 22 is moved in the X-axis direction indicated by the arrow X to half-cut the depth not reaching the back surface 10b from the front surface 10a side. A groove 100 is formed (see FIG. 2(b)). After the first half-cut groove 100 is formed along the X-axis direction, the spindle unit 32 is raised in the Z-axis direction and moved in the Y-axis direction by moving means (not shown), and is further cut in half at a predetermined interval. A cut groove 100 is formed. By repeating this, a plurality of half-cut grooves 100 are formed at predetermined intervals in a predetermined direction over the entire surface 10a of the transparent plate 10. FIG. After that, the chuck table 22 is rotated by 90° by operating the rotation drive means (not shown), and a plurality of half-cut grooves 100 are formed at predetermined intervals in a direction orthogonal to the previously formed half-cut grooves 100 by the same procedure as described above. Half-cut grooves 100 are formed, and half-cut grooves 100 are formed in a grid pattern over the entire surface 10a (see FIG. 4A if necessary). Thus, the groove forming process is completed.

上記した溝形成工程が完了したならば、透明板１０の表面１０ａに支持シートの表面を位置付けて支持する支持工程を実施する。ここで、図３を参照しながら、本実施形態の透明板の加工方法に好適な支持シートについて説明する。 After the above-described groove forming process is completed, a support process is performed to position and support the surface of the support sheet on the surface 10a of the transparent plate 10. As shown in FIG. Here, a support sheet suitable for the transparent plate processing method of the present embodiment will be described with reference to FIG.

図３には、本実施形態の支持シート１２を形成するための第一の手順の概要を説明するための図（図中上段）、及び第一の手順とは異なる支持シート１２を形成するための第二の手順の概要を説明するための図（図中中段）が示されている。 FIG. 3 shows a diagram (upper in the figure) for explaining the outline of the first procedure for forming the support sheet 12 of the present embodiment, and a diagram for forming the support sheet 12 different from the first procedure. A diagram (middle part of the figure) for explaining the outline of the second procedure of is shown.

先ず図３の図中上段に示す第一の手順について説明すると、支持シート１２は、透明板１０を支持するための透明シート４０と、予め円形状の薄膜として形成された反射膜５０により形成される。透明シート４０は、光透過性と柔軟性を有する透明なシートであり、例えば、溶融温度近傍まで加熱することにより粘着性を発揮するポリオレフィン系シート、又はポリエステル系シートから採用することができる。透明シート４０は、被加工物１０を支持する表面４０ａ（図では下方に向けられている）と、反射膜５０が積層される裏面４０ｂとを備える。反射膜５０は、例えば、光を良好に反射する薄膜、例えば、アルミニウム薄膜（アルミ箔）から構成される。反射膜５０は、透明板１０と同一の直径、又は若干大きい寸法で形成され、透明シート４０の裏面４０ｂ側であって、外周領域４４によって囲繞される図中一点鎖線で示す中央領域４２に位置付けられ、図示しない加熱ローラ等により加熱及び押圧されて透明シート４０に貼着されて、図中下段に示すような支持シート１２となる。なお、反射膜５０は、上記アルミニウム薄膜に限定されず、例えば、他の金属製の薄膜、又は金属色の塗料が塗付された円形の紙シートであってもよい。反射膜５０は、光を良好に反射する側が、透明シート４０の裏面４０ｂ側に向けられて貼着される。 First, the first procedure shown in the upper part of FIG. 3 will be described. The support sheet 12 is formed of a transparent sheet 40 for supporting the transparent plate 10 and a reflective film 50 formed in advance as a circular thin film. be. The transparent sheet 40 is a transparent sheet having light transmittance and flexibility, and can be selected from, for example, a polyolefin-based sheet or a polyester-based sheet that exhibits adhesiveness when heated to near the melting temperature. The transparent sheet 40 has a front surface 40a (facing downward in the drawing) that supports the workpiece 10, and a back surface 40b on which the reflective film 50 is laminated. The reflective film 50 is composed of, for example, a thin film that reflects light well, such as an aluminum thin film (aluminum foil). The reflective film 50 is formed with the same diameter as the transparent plate 10 or a slightly larger size, and is positioned on the back surface 40b side of the transparent sheet 40 in the central region 42 surrounded by the outer peripheral region 44 and indicated by the dashed line in the figure. It is heated and pressed by a heating roller or the like (not shown) and adhered to the transparent sheet 40 to form the support sheet 12 shown in the lower part of the figure. Note that the reflective film 50 is not limited to the aluminum thin film described above, and may be, for example, a thin film made of another metal, or a circular paper sheet coated with metallic-colored paint. The reflective film 50 is adhered so that the side that reflects light well faces the back surface 40 b of the transparent sheet 40 .

図３の図中中段には、支持シート１２を形成するための他の手順である第二の手順が示されている。第二の手順では、上記した透明シート４０を用意した後、裏面４０ｂの中央領域４２の上方に、金属色（金色、銀色等）塗料５２を塗布するノズル５５を位置付けて、中央領域４２に向けて金属色塗料５２を噴射して反射膜５２’を積層する。なお、この際、中央領域４２を囲繞する外周領域４４に対して適宜のマスク用のシートを貼着しておき、中央領域４２に対する金属色塗料５２の噴射が完了した後、該マスク用のシートを除去する。この第二の手順によっても、透明シート４０の裏面４０ｂの中央領域４２上に光を良好に反射する反射膜５２’が積層された支持シート１２を形成することができる。なお、この第二の手順において、中央領域４２に金属色塗料５２を塗布するに際し、必ずしもノズル５５から金属色塗料５２を噴射することに限定されず、塗装用のスポンジローラ等によって塗装するものであってもよい。 A second procedure, which is another procedure for forming the support sheet 12, is shown in the middle part of FIG. In the second procedure, after the above-described transparent sheet 40 is prepared, a nozzle 55 for applying a metallic color (golden, silver, etc.) paint 52 is positioned above the central region 42 of the back surface 40 b and directed toward the central region 42 . Then, the metallic color paint 52 is jetted to form a reflective film 52'. At this time, an appropriate masking sheet is attached to the outer peripheral region 44 surrounding the central region 42, and after the injection of the metallic color paint 52 to the central region 42 is completed, the masking sheet is applied. to remove Also by this second procedure, it is possible to form the support sheet 12 in which the reflective film 52 ′ that reflects light well is laminated on the central region 42 of the back surface 40 b of the transparent sheet 40 . In the second procedure, when the metallic paint 52 is applied to the central region 42, the metallic paint 52 is not necessarily sprayed from the nozzle 55, and may be applied using a sponge roller or the like for painting. There may be.

上記した透明シート４０として熱圧着に好適なポリオレフィン系シートを採用する場合は、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかから選択することができる。また、透明シート４０として、熱圧着に好適なポリエステル系シートを採用する場合は、ポリエチレンテレフタレートシート、又はポリエチレンナフタレートシートから選択することができる。なお、上記した透明シート４０は、ポリオレフィン系シート、ポリエステル系シートに限定されず、表面に糊剤等からなる粘着剤が塗付された一般的なダイシングテープ、例えば、ポリ塩化ビニル（ＰＶＣ）のシートであってもよい。 When a polyolefin sheet suitable for thermocompression bonding is used as the transparent sheet 40, it can be selected from any one of a polyethylene sheet, a polypropylene sheet, and a polystyrene sheet. When a polyester sheet suitable for thermocompression bonding is used as the transparent sheet 40, it can be selected from a polyethylene terephthalate sheet and a polyethylene naphthalate sheet. The transparent sheet 40 is not limited to a polyolefin-based sheet or a polyester-based sheet, and is made of a general dicing tape, for example, polyvinyl chloride (PVC), the surface of which is coated with an adhesive such as a glue. It may be a sheet.

上記した支持シート１２を予め用意しておき、上記した溝形成工程によってハーフカット溝１００が形成された透明板１０の表面１０ａに、支持シート１２の表面（透明シート４０の表面４０ａ側）を位置付けて支持する支持工程を実施する。図４を参照しながら、該支持工程についてより具体的に説明する。 The support sheet 12 described above is prepared in advance, and the surface of the support sheet 12 (the side of the surface 40a of the transparent sheet 40) is positioned on the surface 10a of the transparent plate 10 on which the half-cut grooves 100 are formed by the groove forming process described above. Then, a supporting step is carried out. The supporting step will be described more specifically with reference to FIG.

該支持工程を実施するに際し、図４（ａ）に示すような平坦面６２を備えたテープ貼り台６０を用意する。平坦面６２上の中央に、上記溝形成工程によってハーフカット溝１００が形成された透明板１０の表面１０ａ側を上方にして載置する。さらに、平坦面６２上に、透明板１０を収容可能な大きさの開口Ｆａが形成された環状のフレームＦを、開口Ｆａの中央位置に透明板１０を位置付けて載置する。 When carrying out the supporting step, a tape sticking base 60 having a flat surface 62 as shown in FIG. 4(a) is prepared. The transparent plate 10 on which the half-cut grooves 100 are formed by the groove forming process is placed in the center of the flat surface 62 with the surface 10a side facing upward. Further, an annular frame F having an opening Fa large enough to accommodate the transparent plate 10 is placed on the flat surface 62 with the transparent plate 10 positioned at the center of the opening Fa.

テープ貼り台６０の平坦面６２上に、図４（ａ）に示す如く透明板１０及びフレームＦを載置したならば、透明板１０の表面１０ａに対し、上記した支持シート１２の表面（透明シート４０の表面４０ａ側）を下方に向け、裏面（透明シート４０の裏面４０ｂ側）に積層された反射膜５０（５２’）に対応する領域を透明板１０に位置付けて載置し、図示しないローラ等で圧着する。支持シート１２は、フレームＦの開口Ｆａよりも若干大きな寸法で形成されており、支持シート１２の外縁がフレームＦに貼着され、支持シート１２の反射膜５０（５２’）が積層された領域に対応する領域が、透明板１０の表面１０ａに貼着される。以上により、透明板１０が支持シート１２に支持される支持工程が完了する。このようにして透明板１０が支持シート１２、及びフレームＦに支持されたならば、図４（ｂ）に示すように、上下（表裏）を反転させて、透明板１０の裏面１０ｂが上方に露出された状態とする。 When the transparent plate 10 and the frame F are placed on the flat surface 62 of the tape sticking base 60 as shown in FIG. The front surface 40a side of the sheet 40) is directed downward, and the area corresponding to the reflective film 50 (52') laminated on the rear surface (the rear surface 40b side of the transparent sheet 40) is positioned and placed on the transparent plate 10 (not shown). Press with a roller or the like. The support sheet 12 is formed with a dimension slightly larger than the opening Fa of the frame F, the outer edge of the support sheet 12 is adhered to the frame F, and the area where the reflective film 50 (52') of the support sheet 12 is laminated. is adhered to the surface 10 a of the transparent plate 10 . Thus, the supporting process of supporting the transparent plate 10 on the supporting sheet 12 is completed. After the transparent plate 10 is supported by the support sheet 12 and the frame F in this way, as shown in FIG. be exposed.

上記した支持工程を完了したならば、透明板１０の裏面１０ｂから表面１０ａに形成したハーフカット溝１００に対応する領域を切削する切削工程を実施する。該切削工程を実施すべく、透明板１０を図５に示す切削装置２０（一部のみ示す）に搬送し、チャックテーブル２２に載置して吸引保持すると共に、フレームＦをクランプ２６によって固定する。 After the above-described supporting process is completed, a cutting process is carried out for cutting a region corresponding to the half-cut grooves 100 formed from the rear surface 10b of the transparent plate 10 to the front surface 10a. In order to carry out the cutting process, the transparent plate 10 is conveyed to a cutting device 20 (only a portion of which is shown) shown in FIG. .

チャックテーブル２２に透明板１０を保持したならば、切削工程の一部として実施される、透明板１０の裏面１０ｂ側からハーフカット溝１００を検出する検出工程を実施する。検出工程を実施する際には、切削装置２０に配設された、図５に示す撮像手段７０が使用される。撮像手段７０は、可視光線を照射してチャックテーブル２２上を撮像する撮像素子（ＣＣＤ）を含み（図示は省略する）、制御手段８０に接続される。 After the transparent plate 10 is held on the chuck table 22, a detection step for detecting the half-cut grooves 100 from the back surface 10b side of the transparent plate 10 is performed as part of the cutting step. When performing the detection process, the imaging means 70 shown in FIG. 5 arranged in the cutting device 20 is used. The imaging means 70 includes an imaging device (CCD) (not shown) that irradiates visible light to image the chuck table 22 , and is connected to the control means 80 .

制御手段８０は、コンピュータにより構成され、制御プログラムに従って演算処理する中央演算処理装置（ＣＰＵ）と、制御プログラム等を格納するリードオンリメモリ（ＲＯＭ）と、撮像手段７０から伝送された情報や、演算結果等を一時的に格納するための読み書き可能なランダムアクセスメモリ（ＲＡＭ）と、入力インターフェース、及び出力インターフェースとを備えている（詳細についての図示は省略）。制御手段８０の出力インターフェースには、適宜加工情報等を表示するための表示手段９０が接続されている。撮像手段７０によって検出されるハーフカット溝１００の情報は、制御手段８０に伝送される。制御手段８０では、撮像手段７０によって撮像されたハーフカット溝１００の位置情報が演算され、後述する切削手段３０の切削ブレードとの位置合わせ（アライメント）を行うことができる。撮像手段７０によって検出された情報は、適宜制御手段８０のメモリ（ＲＡＭ）に記憶されると共に、表示手段９０に表示される。 The control means 80 is composed of a computer, and includes a central processing unit (CPU) that performs arithmetic processing according to a control program, a read-only memory (ROM) that stores control programs and the like, information transmitted from the imaging means 70 and calculations. It has a readable and writable random access memory (RAM) for temporarily storing results and the like, an input interface, and an output interface (details are not shown). An output interface of the control means 80 is connected to a display means 90 for appropriately displaying processing information and the like. Information on the half-cut grooves 100 detected by the imaging means 70 is transmitted to the control means 80 . The control means 80 calculates the positional information of the half-cut groove 100 imaged by the imaging means 70, and can align the half-cut groove 100 with the cutting blade of the cutting means 30, which will be described later. Information detected by the imaging means 70 is stored in the memory (RAM) of the control means 80 and displayed on the display means 90 .

撮像手段７０によって透明板１０の表面１０ａに形成されたハーフカット溝１００を検出するには、図示しない移動手段を作動して、チャックテーブル２２に保持された透明板１０を撮像手段７０の直下に位置付ける。透明板１０を撮像手段７０の直下に位置付けたならば、撮像手段７０から、透明板１０に向けて可視光線（照明光）を照射すると共に、撮像素子（ＣＣＤ）によって透明板１０の裏面１０ｂを撮像する。ここで、上記したように、本実施形態において使用される透明板１０及び支持シート１２を構成する透明シート４０は透明であり、透明シート４０の裏面４０ｂの中央領域、すなわち、透明板１０が支持された領域には光を良好に反射する反射膜５０（５２’）が積層されている。これにより、撮像手段７０から照射された照明光が、透明板１０及び透明シート４０を透過して反射膜５０（５２’）で反射し、透明板１０の表面１０ａ側に形成されたハーフカット溝１００の側面、及び底面で乱反射する。これにより、図５に示す表示手段９０にて表示されているように、透明板１０の裏面１０ｂ側にハーフカット溝１００が表れ、切削装置２０上のいずれの座標位置にハーフカット溝１００が位置しているのかを正確に把握することができる。このようにして検出工程が実施されることにより、ハーフカット溝１００の方向、及び座標位置が正確に特定され、制御手段８０のメモリに記憶される。 In order to detect the half-cut grooves 100 formed on the surface 10 a of the transparent plate 10 by the imaging means 70 , moving means (not shown) is operated to move the transparent plate 10 held by the chuck table 22 directly below the imaging means 70 . Position. When the transparent plate 10 is positioned directly below the image pickup means 70, the image pickup means 70 irradiates the transparent plate 10 with visible light (illumination light), and the rear surface 10b of the transparent plate 10 is imaged by the image pickup device (CCD). Take an image. Here, as described above, the transparent sheet 40 constituting the transparent plate 10 and the support sheet 12 used in this embodiment is transparent, and the central region of the back surface 40b of the transparent sheet 40, that is, the transparent plate 10 is supported. A reflective film 50 (52') that reflects light well is laminated on the area marked with the reflective film. As a result, the illumination light emitted from the imaging means 70 passes through the transparent plate 10 and the transparent sheet 40 and is reflected by the reflective film 50 (52'). Diffuse reflection occurs on the side surface and bottom surface of 100 . 5, the half-cut groove 100 appears on the back surface 10b side of the transparent plate 10, and the half-cut groove 100 is positioned at any coordinate position on the cutting device 20. You can see exactly what you are doing. By executing the detection process in this manner, the direction and coordinate position of the half-cut groove 100 are accurately specified and stored in the memory of the control means 80 .

上記した検出工程を実施したならば、チャックテーブル２２を移動して、図６（ａ）に示す切削手段３０の直下に透明板１０を位置付ける。なお、図６（ａ）に示す切削手段３０は、溝形成工程を実施した際に使用した切削手段３０であるが、本実施形態では、該溝形成工程において使用した切削ブレード３６Ａを外し、ハーフカット溝１００の溝幅よりも広い厚み、例えば１００μｍの厚みを有する切削ブレード３６Ｂに交換してある。上記したように、切削手段３０の直下に透明板１０を位置付けたならば、制御手段８０に記憶されたハーフカット溝１００の位置情報に基づいて、図６（ｂ）に示すように、透明板１０の裏面１０ｂから、ハーフカット溝１００に対応する領域であって、ハーフカット溝１００に至る深さに切削ブレード３６Ｂを位置づける。そして、切削ブレード３６Ｂを矢印Ｒで示す方向に、例えば３０，０００ｒｐｍの回転速度で回転させつつ、チャックテーブル２２をＸ軸方向に移動させて、表面１０ａに形成されたハーフカット溝１００に対応する領域を切削して、分割溝１１０を形成する。このようにして、ハーフカット溝１００と分割溝１１０とにより、透明板１０を完全に分割する。さらに、チャックテーブル２２、及びスピンドルユニット３２を相対的に移動させて、透明板１０の表面１０ａに形成された全てのハーフカット溝１００に対応する領域に、上記した分割溝１１０を形成する。以上により、切削工程が完了し、図７に示すように、透明板１０を複数のチップ１０’に分割する。 After the detection process described above is performed, the chuck table 22 is moved to position the transparent plate 10 directly below the cutting means 30 shown in FIG. 6(a). The cutting means 30 shown in FIG. 6A is the cutting means 30 used when performing the groove forming process, but in this embodiment, the cutting blade 36A used in the groove forming process is removed and the half The cutting blade 36B is replaced with a cutting blade 36B having a thickness greater than the groove width of the cut groove 100, for example, a thickness of 100 μm. As described above, if the transparent plate 10 is positioned directly below the cutting means 30, the transparent plate 10 is moved as shown in FIG. 10, the cutting blade 36B is positioned at a depth corresponding to the half-cut groove 100 and reaching the half-cut groove 100. As shown in FIG. Then, while rotating the cutting blade 36B in the direction indicated by the arrow R at a rotational speed of, for example, 30,000 rpm, the chuck table 22 is moved in the X-axis direction to correspond to the half-cut groove 100 formed on the surface 10a. A region is cut to form a dividing groove 110 . In this manner, the half-cut grooves 100 and the dividing grooves 110 completely divide the transparent plate 10 . Further, the chuck table 22 and the spindle unit 32 are moved relatively to form the dividing grooves 110 described above in regions corresponding to all the half-cut grooves 100 formed on the surface 10a of the transparent plate 10. FIG. As described above, the cutting process is completed, and as shown in FIG. 7, the transparent plate 10 is divided into a plurality of chips 10'.

本実施形態の切削工程では、上記したように、５０μｍの厚みを有する切削ブレード３６Ａによって形成されたハーフカット溝１００の溝幅よりも広い厚み（１００μｍ）の切削ブレード３６Ｂに交換して切削加工を実施したことにより、図６（ｂ）に示すように、各チップの側面には、段差部１１２が形成される。この段差部１１２が、個々のチップ１０’の外周に形成されることにより、チップ１０’を、例えば微小な矩形状の開口を有する凹部を閉塞するのに好適な蓋部材として機能させることができる。なお、このような段差部１１２を形成する場合、必ずしもハーフカット溝１００の溝幅よりも広い厚みの切削ブレード３６Ｂによって切削工程を実施することに限定されない。例えば、ハーフカット溝１００を形成する溝形成工程を実施する際の切削ブレード３６Ａの厚みを１００μｍとし、裏面１０ｂ側からハーフカット溝１００に対応する領域を切削する切削工程を実施する際の切削ブレード３６Ｂの厚みを５０μｍとすることによっても、上下の向きは逆になるが、上記と同様の段差部１１２を形成することが可能である。 In the cutting process of the present embodiment, as described above, the cutting blade 36B is replaced with a cutting blade 36B having a thickness (100 μm) wider than the groove width of the half-cut groove 100 formed by the cutting blade 36A having a thickness of 50 μm. As a result of the implementation, as shown in FIG. 6B, a step portion 112 is formed on the side surface of each chip. By forming the stepped portion 112 on the outer periphery of each chip 10', the chip 10' can function as a lid member suitable for closing a concave portion having a minute rectangular opening, for example. . When forming such a stepped portion 112 , the cutting process is not necessarily performed using a cutting blade 36</b>B having a thickness greater than the groove width of the half-cut groove 100 . For example, the thickness of the cutting blade 36A when performing the groove forming process for forming the half-cut groove 100 is set to 100 μm, and the cutting blade when performing the cutting process for cutting the region corresponding to the half-cut groove 100 from the back surface 10b side By setting the thickness of 36B to 50 μm, it is possible to form the stepped portion 112 similar to the above, although the vertical direction is reversed.

１０：透明板
１０ａ：表面
１０ｂ：裏面
１２：支持テープ
２０：切削装置
２２：チャックテーブル
２４：吸着チャック
２６：クランプ
３０：切削手段
３２：スピンドルユニット
３６Ａ，３６Ｂ：切削ブレード
４０：透明シート
５０、５２’：反射膜
５５：ノズル
６０：テープ貼り台
６２：平坦面
７０：撮像手段
８０：制御手段
９０：表示手段
１００：ハーフカット溝
１１０：分割溝 10: Transparent plate 10a: Front surface 10b: Back surface 12: Support tape 20: Cutting device 22: Chuck table 24: Adsorption chuck 26: Clamp 30: Cutting means 32: Spindle units 36A, 36B: Cutting blade 40: Transparent sheets 50, 52 ': Reflective film 55: Nozzle 60: Tape sticking table 62: Flat surface 70: Imaging means 80: Control means 90: Display means 100: Half-cut groove 110: Division groove

Claims (4)

透明板の加工方法であって、
透明板の表面に切削ブレードを位置付けて切削し裏面に至らない複数のハーフカット溝を形成する溝形成工程と、
透明板を支持する表面を有する透明シートと、該透明シートの裏面に積層された反射膜とを有する支持シートの該反射膜が形成された領域に対応する表面を該ハーフカット溝が形成された透明板の表面に位置付けて支持する支持工程と、
透明板の裏面に切削ブレードを位置づけて表面に形成された該ハーフカット溝に対応する領域を切削する切削工程と、
を少なくとも含み、
該切削工程には、該ハーフカット溝に対応する領域を切削する前に透明板の裏面から表面に形成された該ハーフカット溝を検出する検出工程が含まれる透明板の加工方法。 A method for processing a transparent plate,
a groove forming step of positioning a cutting blade on the front surface of the transparent plate and cutting the transparent plate to form a plurality of half-cut grooves that do not reach the back surface;
The half-cut groove is formed on the surface of a support sheet having a transparent sheet having a surface for supporting a transparent plate and a reflective film laminated on the back surface of the transparent sheet, corresponding to the region where the reflective film is formed. a supporting step of positioning and supporting on the surface of the transparent plate;
a cutting step of positioning a cutting blade on the back surface of the transparent plate to cut a region corresponding to the half-cut groove formed on the front surface;
including at least
A method of processing a transparent plate, wherein the cutting step includes a detection step of detecting the half-cut grooves formed from the back surface to the front surface of the transparent plate before cutting the region corresponding to the half-cut grooves. 該切削工程において、透明板の表面に形成された該ハーフカット溝の幅より広い、又は狭い幅の切削ブレードを用い、透明板の裏面から該ハーフカット溝に至る深さの溝を形成して複数のチップに分割する請求項１に記載の透明板の加工方法。 In the cutting step, a cutting blade having a width wider or narrower than the width of the half-cut groove formed on the surface of the transparent plate is used to form a groove with a depth from the back surface of the transparent plate to the half-cut groove. 2. The method of processing a transparent plate according to claim 1, wherein the transparent plate is divided into a plurality of chips . 該透明シートは、ポリオレフィン系シート、ポリエステル系シートのいずれかである請求項１に記載の透明板の加工方法。 2. The method of processing a transparent plate according to claim 1, wherein the transparent sheet is either a polyolefin sheet or a polyester sheet . 該反射膜は、アルミニウム薄膜、金属色塗料、のいずれかを含む請求項２、又は３に記載の透明板の加工方法。 4. The method of processing a transparent plate according to claim 2, wherein the reflective film includes either an aluminum thin film or metallic color paint .
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