TW201511148A - 接合用工具、接合裝置及半導體裝置 - Google Patents

接合用工具、接合裝置及半導體裝置 Download PDF

Info

Publication number
TW201511148A
TW201511148A TW102146996A TW102146996A TW201511148A TW 201511148 A TW201511148 A TW 201511148A TW 102146996 A TW102146996 A TW 102146996A TW 102146996 A TW102146996 A TW 102146996A TW 201511148 A TW201511148 A TW 201511148A
Authority
TW
Taiwan
Prior art keywords
bonding
wire
terminal
region
wires
Prior art date
Application number
TW102146996A
Other languages
English (en)
Other versions
TWI527137B (zh
Inventor
takaaki Akahane
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW201511148A publication Critical patent/TW201511148A/zh
Application granted granted Critical
Publication of TWI527137B publication Critical patent/TWI527137B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48455Details of wedge bonds
    • H01L2224/48456Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4846Connecting portions with multiple bonds on the same bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78315Shape of the pressing surface, e.g. tip or head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85186Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

本發明之實施形態提供一種藉由抑制接合線之斷線或剝離而具有較高之可靠性之接合方法或半導體裝置。 本發明之半導體裝置包括:端子3;端子4;及接合線5,其包含連接於端子3之連接部11及連接於端子4之連接部12,且電性連接端子3與端子4;連接部11包括:接合區域31,其係壓接接合線5之一部分而成;及接合區域32,其係於較接合區域31更靠近端子12之位置壓接接合線5之一部分而成;且接合區域32中之接合線5之厚度厚於接合區域31中之接合線5之厚度。

Description

接合用工具、接合裝置及半導體裝置
[相關申請案]
本申請案享有以日本專利申請案2013-187131號(申請日:2013年9月10日)為基礎申請案之優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之全部內容。
本發明之實施形態係關於一種接合用工具、接合裝置及半導體裝置。
作為將半導體晶片與其他晶片或基板電性連接的技術,已知有打線接合。打線接合係藉由如下方式進行:使用接合裝置,藉由被稱為毛細管之接合用工具一面送出接合線,一面使接合線之一端壓接於半導體晶片之端子,使另一端壓接於其他晶片或基板之端子。
進而,作為打線接合之一例,可列舉楔形接合(wedge bonding)。楔形接合並非如球形接合(ball bonding)般於線之前端形成球,而係藉由超音波使線之前端壓接之方式。楔形接合與藉由熱壓接等使線前端之球壓接之方式相比,可實現低溫下之壓接。又,有如下優點:於半導體晶片側不易形成異種金屬化合物,又,能夠以窄間距進行打線接合等。
於楔形接合中,較佳為一面使用接合用工具按壓接合線之一端一面使其超音波振動而壓接於端子。其後,較佳為進行線之塑性變形,以使接合線不連接於另一端子之方式形成彎曲部。然而,存在於 塑性變形時在接合線之連接點與彎曲部之間產生應力而使接合線斷線或剝離之情況。
本發明所欲解決之問題在於提供一種抑制接合線之斷線或剝離之接合方法或半導體裝置。
實施形態之接合用工具包括:線送出部,其沿長度方向依序送出接合線;及線按壓部,其按壓自線送出部送出之接合線之一部分;且線按壓部包含:第1凸部;及第2凸部,其設置於第1凸部與線送出部之間,且高度低於第1凸部。
實施形態之接合裝置包括:接合用工具,其包含沿長度方向依序送出接合線之線送出部、及按壓自上述線送出部送出之上述接合線之一部分之線按壓部;以及控制部,其控制上述接合用工具之動作;上述控制部控制如下動作之執行:移動上述接合用工具,自上述線送出部送出上述接合線之一部分並將上述接合線之一部分配置於端子上;一面藉由上述線按壓部以第1壓力按壓上述接合線之一部分一面使其超音波振動而進行壓接,藉此形成第1接合區域;移動上述接合用工具,自上述線送出部送出上述接合線之一部分並將上述接合線之一部分配置於上述端子之與上述第1接合區域不同之位置;以及一面藉由上述線按壓部以低於上述第1壓力之第2壓力按壓上述接合線之一部分一面使其超音波振動而進行壓接,藉此形成第2接合區域。
實施形態之半導體裝置包括:第1端子;第2端子;及接合線,其包含連接於上述第1端子之第1連接部及連接於上述第2端子之第2連接部,且電性連接上述第1端子與上述第2端子;上述第1連接部包含:第1接合區域,其係壓接上述接合線之一部分而成;及第2接合區域,其係於較上述第1接合區域更靠近上述第2端子之位置壓接上述接合線之一部分而成;且上述第2接合區域中之上述接合線之厚度厚於 上述第1接合區域中之上述接合線之厚度。
1‧‧‧半導體晶片
1a‧‧‧半導體晶片
1b‧‧‧半導體晶片
2‧‧‧基板
3‧‧‧端子
4‧‧‧端子
5‧‧‧接合線
11‧‧‧連接部
12‧‧‧連接部
31‧‧‧接合區域
32‧‧‧接合區域
33‧‧‧接合區域
51‧‧‧接合用工具
52‧‧‧控制部
61‧‧‧線送出部
62‧‧‧線按壓部
71‧‧‧接合用工具
81‧‧‧線送出部
82‧‧‧線按壓部
91‧‧‧凸部
92‧‧‧凸部
T1‧‧‧厚度
T2‧‧‧厚度
圖1(A)、(B)係表示第1實施形態中之半導體裝置之剖面圖。
圖2(A)、(B)係表示第1實施形態中之半導體裝置之另一例之剖面圖。
圖3(A)、(B)係表示第1實施形態中之接合裝置之模式圖。
圖4(A)~(D)係表示使用第1實施形態中之接合裝置之半導體裝置之接合之剖面圖。
圖5係第2實施形態中之接合用工具中之前端部之放大圖。
圖6(A)、(B)係表示使用第2實施形態中之接合裝置之半導體裝置之楔形接合之剖面圖。
以下,參照圖式對實施形態之半導體裝置進行說明。
(第1實施形態)
圖1(A)係表示實施形態之半導體裝置之剖面圖。圖1所示之半導體裝置包括半導體晶片1、基板2、設置於半導體晶片1之端子3、設置於基板2之端子4、及電性連接端子3與端子4之接合線5。接合線5包含連接於端子3之連接部11與連接於端子4之連接部12。
半導體晶片1係使用例如設置於矽基板之半導體元件。半導體晶片1係例如介隔接著層而形成於基板上。作為基板2,可使用例如形成有配線等之電路基板等。端子3及端子4係使用例如鋁、銅、金等而形成。接合線5之直徑並無特別限定,但例如可設為50μm左右。作為接合線5,可使用例如金、鋁等線。較佳為例如藉由使用與端子3或端子4相同之材料,而成為同一材料間之接合,故而可減小接觸電阻。
圖1(B)係連接部11之放大圖。連接部11包含:接合區域31,其係壓接接合線5之一部分而成;及接合區域32,其係於與接合區域31不 同之位置壓接接合線5之一部分而成。此時,接合區域32係設置於較接合區域31更靠近端子4之位置。換言之,自接合區域32至連接部12之接合線5之長度短於自接合區域31至連接部12之接合線5之長度。進而,接合區域32中之接合線5之厚度T2厚於接合區域31中之接合線5之厚度T1。例如,接合區域31具有使接合線5以第1變形量變形所得之厚度,接合區域32具有使接合線5以第2變形量變形所得之厚度。接合區域31及接合區域32係例如藉由如下方式而形成,即,一面利用接合裝置將接合線5之一部分按壓至端子3一面使其超音波振動而進行壓接。此時,例如使於形成接合區域32時按壓接合線5之壓力低於形成接合區域31時,即,使第2變形量小於第1變形量,藉此可設為T2>T1。進而,亦可使於形成接合區域32時使接合線5超音波振動之情形時之超音波之頻率低於形成接合區域31時。再者,此處所謂厚度T1及T2之「厚度」係指於以接合線之接合區域31及32側為基準之情形時接合區域31及32中之厚度最小之部分之厚度。
藉由設置接合區域32,可抑制接合線5之斷線或剝離,故而可提高半導體裝置之可靠性。例如,於形成連接部11之後使接合線5彎曲,此時於連接部11附近會產生較強之應力(stress)。此時,接合區域31之壓接力高於接合區域32,而為輕微壓壞之狀態,故而假如為無接合區域32之構成,則一旦上述應力施加至接合區域31附近,那麼接合線5易於斷線或剝離。然而,於設置接合區域32之情形時,上述應力會施加至接合區域32附近,但由於接合區域32之壓接力低於接合區域31,故而與上述應力施加至接合區域31附近之情形相比,可緩和上述應力。又,即便因使接合線5彎曲時之應力導致接合區域32剝離,亦於接合區域31維持端子3之電性連接。由此,連接部11中之接合線5之斷線或剝離得以抑制,故而可提高半導體裝置之可靠性。
再者,關於端子3及端子4,本實施形態之半導體裝置並不限定 於此。例如,圖2(A)及圖2(B)係表示半導體裝置之其他例之剖面圖。
圖2(A)所示之半導體裝置與圖1(A)所示之半導體裝置相比,於以下方面不同,即,在設置於基板2之端子4上具備包含接合區域31及接合區域32之連接部11,在端子3具備連接部12。關於與圖1(A)所示之半導體裝置相同之部分,援引圖1(A)所示之半導體裝置之說明。如圖2(A)所示,亦可於基板2之端子3上設置包含接合區域31及接合區域32之連接部11。
又,圖2(B)所示之半導體裝置與圖1(A)所示之半導體裝置相比,於以下方面不同,即,在設置於半導體晶片1a之端子3上具備包含接合區域31及接合區域32之連接部11,在設置於半導體晶片1b之端子4上具備連接部12。將半導體晶片1a及半導體晶片1b積層。關於與圖1(A)所示之半導體裝置相同之部分,援引圖1(A)所示之半導體裝置之說明。如圖2(B)所示,亦可在設置於半導體晶片1b之端子4上設置連接部12,在設置於半導體晶片1b上所積層之半導體晶片1a之端子3上設置連接部11。反之,亦可在設置於半導體晶片1b之端子4上設置連接部11,在設置於半導體晶片1b上所積層之半導體晶片1a之端子3上設置連接部12。又,亦可使用引線框架等代替基板2。
其次,參照圖3對可實現圖1所示之半導體裝置之楔形接合之接合裝置之例進行說明。
圖3(A)係表示接合裝置之模式圖。圖3(A)所示之接合裝置包括接合用工具51、及控制接合用工具51之動作之控制部52。再者,為了控制接合線5之送出、固定,亦可於接合裝置設置夾具。又,為了使接合線5超音波振動,亦可於接合裝置設置超音波振盪器。作為超音波振盪器,例如可使用壓電元件。又,於對接合線5進行加熱之情形時,亦可於接合裝置設置加熱器。
接合用工具51可於縱向(X方向)、橫向(Y方向)、高度方向(Z方 向)上移動。接合用工具51係使用例如鎢或鈦等金屬或陶瓷等絕緣材料。
控制部52控制例如接合用工具51之移動、接合線5之送出、及對接合線5之超音波之施加等動作。控制部52係使用例如利用處理器等之硬體。再者,亦可將各動作作為動作程式預先保存至記憶體等可由電腦讀取之記錄媒體,並藉由利用硬體適當讀出記憶於記錄媒體之動作程式而執行各動作。
圖3(B)係接合用工具51中之前端部之放大圖。接合用工具51包括線送出部61及線按壓部62。
於線送出部61,沿長度方向依序送出接合線5。接合線5之送出可藉由例如利用控制部52控制夾具而調整。線送出部61例如較佳為貫通孔。上述貫通孔亦作為接合線5之導引件發揮功能。
線按壓部62成為凸部,可藉由凸部按壓自線送出部61送出之接合線5之一部分。再者,亦可藉由使凸部之角成弧形,而於按壓時抑制接合線5之斷線。
其次,參照圖4(A)至圖4(D),對圖1(A)所示之半導體裝置之接合之例進行說明。圖4(A)至圖4(D)係表示使用接合裝置之半導體裝置之楔形接合之剖面圖。再者,各動作係由控制部52控制。
首先,如圖4(A)所示,移動接合用工具51,自線送出部61送出接合線5之一部分並將接合線5之一部分配置於端子3上。進而,一面藉由線按壓部62以第1壓力按壓接合線5之一部分一面以第1頻率使其超音波振動而進行壓接,藉此形成接合區域31。
其次,如圖4(B)所示,移動接合用工具51,自線送出部61送出接合線5之一部分並將接合線5之一部分配置於端子3上。進而,一面藉由線按壓部62以低於第1壓力之第2壓力按壓接合線5之一部分,一面以低於第1頻率之第2頻率使其超音波振動而進行壓接,藉此形成接合 區域32。再者,並不限定於第2頻率,亦可設為第1頻率。此時,接合區域32中之接合線5之變形量小於接合區域31中之接合線5之變形量,故而接合區域32中之接合線5之厚度變得厚於接合區域31中之接合線5之厚度。
繼而,如圖4(C)所示,移動接合用工具51,使接合線5塑性變形而使接合線5彎曲。
此時,會對接合區域32附近施加應力。然而,由於接合區域32係以低於接合區域31之壓力使接合線5壓接,故而與施加至未形成接合區域32之情形時之接合區域31附近之應力相比,可緩和施加至接合區域32附近之應力。由此,於接合區域32附近抑制接合線5之斷線或剝離,故而可提高半導體裝置之可靠性。
進而,如圖4(D)所示,移動接合用工具51,自線送出部61送出接合線5之一部分並將接合線5之一部分配置於端子4上。進而,一面藉由線按壓部62按壓接合線5之一部分一面使其超音波振動而進行壓接,從而形成接合區域,藉此形成連接部12。其後,藉由拉伸利用夾具固定之接合線5而將其切斷。藉由以上步驟可進行半導體裝置之接合。
(第2實施形態)
可使用其他接合用工具代替圖3(A)及圖3(B)所示之接合用工具51。圖5係接合用工具中之前端部之放大圖。圖5所示之接合用工具71包括線送出部81及線按壓部82。
接合用工具71可於縱向(X方向)、橫向(Y方向)、高度方向(Z方向)上移動。接合用工具71係使用例如鎢或鈦等金屬或陶瓷等絕緣材料。
線送出部81與圖3(B)所示之線送出部61相同,故而援引線送出部61之說明。線按壓部82包含凸部91及凸部92。凸部92係設置於凸部91 與線送出部81之間,且高度低於凸部91。換言之,接合線5之前進方向側之凸部91高於相反側之凸部92。
此時,按壓時之凸部92之壓力亦因凸部91之高度與凸部92之高度之差而變化。例如,凸部91之高度與凸部92之高度之差較佳為小於壓接前之接合線5之直徑。若凸部91之高度與凸部92之高度之差大於接合線5之直徑,則凸部91之按壓時之壓力與凸部92之按壓時之壓力相比會過高,而易於因凸部91導致接合線5斷線。由此,藉由使凸部91之高度與凸部92之高度之差小於接合線5之直徑而調整凸部91之按壓時之壓力與凸部92之按壓時之壓力,可抑制接合線5之斷線,從而可提高半導體裝置之可靠性。又,藉由使凸部91及凸部92之各者之角成弧形,亦可於按壓時抑制接合線5之斷線。
如圖5所示,藉由在線按壓部82設置高度不同之複數個凸部,可利用同一步驟於複數個區域壓接接合線5,故而可減少製造步驟數。進而,可利用同一步驟形成壓接力不同之複數個接合區域。
參照圖6(A)及圖6(B)對使用圖5所示之接合用工具71之情形時之圖1(A)所示之半導體裝置之接合進行說明。圖6(A)及圖6(B)係表示使用接合裝置之半導體裝置之楔形接合之剖面圖。再者,各動作係由圖3(A)所示之控制部52控制。
如圖6(A)所示,移動接合用工具71,自線送出部81送出接合線5之一部分並將接合線5配置於端子3上。進而,一面利用凸部91按壓接合線5之一部分一面使其超音波振動而進行壓接,藉此形成接合區域31,並且於與接合區域31不同之位置一面利用凸部92按壓接合線5之一部分一面使其超音波振動而進行壓接,藉此形成接合區域32。此時,凸部92之壓力低於凸部91之壓力。藉此,接合區域32中之接合線5之壓接力變得小於接合區域31中之接合線5之壓接力,接合區域32中之接合線5之厚度變得厚於接合區域31中之接合線5之厚度。藉由設置 接合區域32,可抑制接合線5之斷線或剝離,從而可提高半導體裝置之可靠性。又,藉由使用接合用工具71,可利用同一步驟形成接合區域31及接合區域32。
其後,於使接合線5之一部分壓接於端子4之情形時,與第1實施形態同樣地移動接合用工具71,使接合線5塑性變形而使接合線5彎曲。進而,移動接合用工具71,自線送出部81送出接合線5之一部分並將接合線5之一部分配置於端子4上。進而,一面藉由線按壓部82按壓接合線5之一部分一面使其超音波振動而進行壓接,從而形成接合區域,藉此如圖6(B)所示般形成連接部12。其後,藉由拉伸利用夾具固定之接合線5而將其切斷。藉由以上步驟可進行半導體裝置之接合。
再者,雖然對本發明之若干個實施形態進行了說明,但該等實施形態係作為示例而提示者,並非意欲限定發明之範圍。該等新穎之實施形態能夠以其他各種形態實施,且可於不脫離發明之主旨之範圍內進行各種省略、置換、變更。該等實施形態或其變化包含於發明之範圍或主旨,並且包含於申請專利範圍所記載之發明及其均等之範圍。
1‧‧‧半導體晶片
2‧‧‧基板
3‧‧‧端子
4‧‧‧端子
5‧‧‧接合線
11‧‧‧連接部
12‧‧‧連接部
31‧‧‧接合區域
32‧‧‧接合區域
T1‧‧‧厚度
T2‧‧‧厚度

Claims (5)

  1. 一種接合用工具,其特徵在於包括:線送出部,其沿長度方向依序送出接合線;及線按壓部,其按壓自上述線送出部送出之上述接合線之一部分;且上述線按壓部包含:第1凸部;及第2凸部,其設置於上述第1凸部與上述線送出部之間,且高度低於上述第1凸部。
  2. 一種接合裝置,其特徵在於包括:如請求項1之接合用工具;及控制部,其控制上述接合用工具之動作;且上述控制部控制如下動作之執行:移動上述接合用工具,自上述線送出部送出上述接合線之一部分並將上述接合線配置於端子上;以及一面利用上述第1凸部按壓上述接合線之一部分一面使其超音波振動而進行壓接,藉此形成第1接合區域,並且一面利用上述第2凸部於與上述第1接合區域不同之位置按壓上述接合線之一部分一面使其超音波振動而進行壓接,藉此形成第2接合區域。
  3. 一種接合裝置,其特徵在於包括:接合用工具,其包含沿長度方向依序送出接合線之線送出部、及按壓自上述線送出部送出之上述接合線之一部分之線按壓部;以及控制部,其控制上述接合用工具之動作;且上述控制部控制如下動作之執行: 移動上述接合用工具,自上述線送出部送出上述接合線之一部分並將上述接合線之一部分配置於端子上;一面藉由上述線按壓部以第1壓力按壓上述接合線之一部分一面使其超音波振動而進行壓接,藉此形成第1接合區域;移動上述接合用工具,自上述線送出部送出上述接合線之一部分並將上述接合線之一部分配置於上述端子之與上述第1接合區域不同之位置;以及一面藉由上述線按壓部以低於上述第1壓力之第2壓力按壓上述接合線之一部分一面使其超音波振動而進行壓接,藉此形成第2接合區域。
  4. 一種半導體裝置,其特徵在於包括:第1端子;第2端子;及接合線,其包含連接於上述第1端子之第1連接部及連接於上述第2端子之第2連接部,且電性連接上述第1端子與上述第2端子;上述第1連接部包含:第1接合區域,其係壓接上述接合線之一部分而成;及第2接合區域,其係於較上述第1接合區域更靠近上述第2端子之位置壓接上述接合線之一部分而成;且上述第2接合區域中之上述接合線之厚度厚於上述第1接合區域中之上述接合線之厚度。
  5. 如請求項4之半導體裝置,其中上述第1接合區域具有使上述接合線之一部分以第1變形量變形所得之厚度;上述第2接合區域具有使上述接合線之一部分以小於上述第1變形量之第2變形量變形所得之厚度。
TW102146996A 2013-09-10 2013-12-18 A bonding tool, a bonding device, and a semiconductor device TWI527137B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013187131A JP2015056426A (ja) 2013-09-10 2013-09-10 ボンディング用ツール、ボンディング装置、および半導体装置

Publications (2)

Publication Number Publication Date
TW201511148A true TW201511148A (zh) 2015-03-16
TWI527137B TWI527137B (zh) 2016-03-21

Family

ID=52820655

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102146996A TWI527137B (zh) 2013-09-10 2013-12-18 A bonding tool, a bonding device, and a semiconductor device

Country Status (3)

Country Link
JP (1) JP2015056426A (zh)
CN (1) CN104425311A (zh)
TW (1) TWI527137B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977174A (zh) * 2016-07-07 2016-09-28 力成科技(苏州)有限公司 指纹产品封装结构的金线打线方法
EP4068342A1 (en) * 2021-04-02 2022-10-05 Mitsubishi Electric R&D Centre Europe B.V. Method for improving the microstructure of the connection portion of a bond wire as well as the resulting device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747198A (en) * 1971-08-19 1973-07-24 Gen Electric Tailless wedge bonding of gold wire to palladium-silver cermets
JPH07263478A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd ボンディングツ−ル
JPH1041332A (ja) * 1996-07-19 1998-02-13 Nec Kansai Ltd ワイヤボンダ
JPH10256299A (ja) * 1997-03-13 1998-09-25 Toshiba Corp ワイヤボンディング方法および装置
JP2000299347A (ja) * 1999-04-12 2000-10-24 Hitachi Ltd ボンディングツール
JP5899907B2 (ja) * 2011-12-26 2016-04-06 富士電機株式会社 ワイヤボンディング用のウェッジツール、ボンディング装置、ワイヤボンディング方法、および半導体装置の製造方法
US8796851B2 (en) * 2012-01-05 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding pad and method of making same

Also Published As

Publication number Publication date
CN104425311A (zh) 2015-03-18
JP2015056426A (ja) 2015-03-23
TWI527137B (zh) 2016-03-21

Similar Documents

Publication Publication Date Title
CN107615464B (zh) 电力用半导体装置的制造方法以及电力用半导体装置
JP4964780B2 (ja) ワイヤボンド相互接続、半導体パッケージ、および、ワイヤボンド相互接続の形成方法
JP6033011B2 (ja) 電力用半導体装置および電力用半導体装置の製造方法
KR101643240B1 (ko) 반도체 장치의 제조 방법
JP5899907B2 (ja) ワイヤボンディング用のウェッジツール、ボンディング装置、ワイヤボンディング方法、および半導体装置の製造方法
TWI527137B (zh) A bonding tool, a bonding device, and a semiconductor device
US9922952B2 (en) Method for producing semiconductor device, and wire-bonding apparatus
JP5433526B2 (ja) 電子機器とその製造方法
JP4612550B2 (ja) パワーデバイス用ボンディングリボンおよびこれを用いたボンディング方法
US9887174B2 (en) Semiconductor device manufacturing method, semiconductor device, and wire bonding apparatus
JP5566296B2 (ja) 半導体装置の製造方法
JP7161252B2 (ja) 半導体装置、半導体装置の製造方法及びワイヤボンディング装置
KR101910654B1 (ko) 반도체 장치의 제조 방법 및 와이어 본딩 장치
US20160358883A1 (en) Bump forming method, bump forming apparatus, and semiconductor device manufacturing method
JP3972517B2 (ja) 電子部品の接続方法
TWI584388B (zh) Semiconductor device manufacturing method
JP2015173205A (ja) 半導体装置及びワイヤボンディング装置
JP6172058B2 (ja) 半導体装置の製造方法
JP7426954B2 (ja) 半導体装置および半導体装置の製造方法
JP2009076767A (ja) 半導体装置の製造方法及びワイヤボンディング装置
JP2012199484A (ja) ワイヤボンディング方法、ワイヤボンディング装置、及び半導体装置
JP2005259819A (ja) 半導体装置およびその製造方法
JPH10178147A (ja) 半導体装置およびその製造方法
JP2016139687A (ja) ワイヤボンディング方法
JP2009088399A (ja) テープボンディング方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees