TW201510451A - Drying furnace - Google Patents

Drying furnace Download PDF

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Publication number
TW201510451A
TW201510451A TW103112961A TW103112961A TW201510451A TW 201510451 A TW201510451 A TW 201510451A TW 103112961 A TW103112961 A TW 103112961A TW 103112961 A TW103112961 A TW 103112961A TW 201510451 A TW201510451 A TW 201510451A
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TW
Taiwan
Prior art keywords
infrared
wavelength
infrared rays
drying
coating film
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Application number
TW103112961A
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Chinese (zh)
Inventor
Yuuki Fujita
Yoshio Kondo
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Ngk Insulators Ltd
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Publication of TW201510451A publication Critical patent/TW201510451A/en

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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00Drying solid materials or objects by processes involving the application of heat
    • F26B3/28Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23DBURNERS
    • F23D14/00Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid
    • F23D14/12Radiant burners
    • F23D14/151Radiant burners with radiation intensifying means other than screens or perforated plates
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • F27B9/24Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30Details, accessories, or equipment peculiar to furnaces of these types
    • F27B9/36Arrangements of heating devices
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00Arrangement of elements for electric heating in or on furnaces
    • F27D11/02Ohmic resistance heating
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00Subject matter not provided for in other groups of this subclass
    • F27D99/0001Heating elements or systems
    • F27D99/0006Electric heating elements or system
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/40Heating elements having the shape of rods or tubes
    • H05B3/42Heating elements having the shape of rods or tubes non-flexible
    • H05B3/46Heating elements having the shape of rods or tubes non-flexible heating conductor mounted on insulating base
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/62Heating elements specially adapted for furnaces
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00Subject matter not provided for in other groups of this subclass
    • F27D99/0001Heating elements or systems
    • F27D99/0006Electric heating elements or system
    • F27D2099/0026Electric heating elements or system with a generator of electromagnetic radiations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013Heaters using resistive films or coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/032Heaters specially adapted for heating by radiation heating

Abstract

A drying furnace (10) provided with: an infrared-ray heater (30); a selectively reflective layer (37) that is positioned, within a furnace body (12), between a filament (31) and a coating film (82), reflects at least part of an infrared ray having a wavelength of less than 2[mu]m, and transmits at least part of an infrared ray having a wavelength of 2-4[mu]m; and an infrared-ray absorbing plate (70) that is positioned within the furnace body (12) at the opposite side of the filament (31) to the selectively reflective layer (37), and can absorb at least part of an infrared ray having a wavelength of less than 2[mu]m. The infrared-ray heater (30) includes a second outer tube (35) that transmits at least part of an infrared ray having a wavelength of 2-4[mu]m, and surrounds the filament (31). At least one of the inner peripheral surface and the outer peripheral surface of the second outer tube (35) includes the selectively reflective layer (37) in a region containing the opposite side of the filament (31) to the infrared-ray absorbing plate (70).

Description

乾燥爐 Drying furnace

本發明係有關於一種乾燥爐。 The present invention relates to a drying oven.

以往已知使用紅外線加熱器對塗膜等之乾燥對象進行乾燥的乾燥爐。例如,在專利文獻1,記載一種乾燥爐,該乾燥爐係使用包括發熱體、包圍發熱體之內管及外管的紅外線加熱器。在此乾燥爐,紅外線加熱器之內管及外管作用為使波長3.5μm以下之紅外線透過,並吸收波長超過3.5μm之紅外線的濾光器。波長3.5μm以下之紅外線係在切斷氫鍵之性能優異,將此波長之紅外線放射至乾燥對象,可高效率地進行乾燥。 Conventionally, a drying furnace that dries a drying target such as a coating film using an infrared heater has been known. For example, Patent Document 1 describes a drying furnace using an infrared heater including a heating element, an inner tube surrounding the heating element, and an outer tube. In this drying furnace, the inner tube and the outer tube of the infrared heater function as a filter that transmits infrared rays having a wavelength of 3.5 μm or less and absorbs infrared rays having a wavelength exceeding 3.5 μm. The infrared ray having a wavelength of 3.5 μm or less is excellent in the performance of cutting hydrogen bonds, and infrared rays of this wavelength are radiated to a drying target, and drying can be performed efficiently.

【先行專利文獻】 [Prior patent documents]

【專利文獻】 [Patent Literature]

[專利文獻1]日本專利4790092號公報 [Patent Document 1] Japanese Patent No. 4790092

可是,在使用這種紅外線加熱器之乾燥爐進行乾燥的情況,有從紅外線加熱器亦放射波長未滿2μm之紅外線的情況。放射此波長未滿2μm之紅外線時,由於該紅外線例如使乾燥爐之爐體或乾燥對象變成過熱等,而有乾燥對象變成過熱的情況。乾燥對象變成過熱時,例如需要大量之用以冷卻之的 送風,而有乾燥時之消耗能量增大的情況。 However, in the case of drying in a drying oven using such an infrared heater, infrared rays having a wavelength of less than 2 μm may be emitted from the infrared heater. When the infrared ray having a wavelength of less than 2 μm is emitted, the infrared ray may cause overheating, for example, in the furnace body or the drying target of the drying furnace. When the dry object becomes overheated, for example, a large amount of cooling is required. Air is supplied, and there is a case where the energy consumed during drying increases.

本發明係為了解決這種課題而開發的,其主要目的在於可更抑制來自紅外線加熱器之波長未滿2μm的紅外線所造成之乾燥對象的過熱。 The present invention has been developed in order to solve such a problem, and its main object is to further suppress overheating of a drying object caused by infrared rays having a wavelength of less than 2 μm from an infrared heater.

本發明之乾燥爐係包括:爐體,係用以進行乾燥對象之乾燥;紅外線加熱器,係配置於該爐體內,並具有放射包含紅外線之電磁波的發熱體;選擇反射體,係在該爐體內配置成位於該發熱體與該乾燥對象之間,反射波長未滿2μm之紅外線的至少一部分,而且使波長2μm~4μm之紅外線的至少一部分透過;及紅外線吸收體,係在該爐體內配置於從該發熱體觀察時與該選擇反射體係相反側,並可吸收波長未滿2μm之紅外線的至少一部分。 The drying furnace of the present invention comprises: a furnace body for drying the drying object; an infrared heater disposed in the furnace body and having a heating element for radiating electromagnetic waves containing infrared rays; and the selective reflector is attached to the furnace The body is disposed between the heating element and the object to be dried, and reflects at least a part of infrared rays having a wavelength of less than 2 μm, and transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm; and the infrared absorber is disposed in the furnace body. At least a part of the infrared rays having a wavelength of less than 2 μm can be absorbed on the side opposite to the selective reflection system when viewed from the heat generating body.

在本發明之乾燥爐,從紅外線加熱器之發熱體放射包含紅外線之電磁波時,對該電磁波中波長未滿2μm之紅外線,在乾燥對象方向所放射者被選擇反射體所反射。因此,可抑制波長未滿2μm之紅外線成直線地到達乾燥對象側。而且,被選擇反射體所反射之紅外線係從選擇反射體被放射至發熱體側,但是被紅外線吸收體所吸收。因此,亦可抑制被選擇反射體反射後的紅外線在爐體等再被反射而到達乾燥對象側。根據以上,可更抑制來自紅外線加熱器之波長未滿2μm的紅外線所造成之乾燥對象的過熱。此外,對從紅外線加熱器所放射之波長2μm~4μm的紅外線,因為透過選擇反射體後可到達乾燥對象側,所以可藉該紅外線對乾燥對象進行乾燥。在此情況, 選擇反射體係使波長2μm~3.5μm之紅外線的至少一部分透過較佳。波長3.5μm以下之紅外線係因為在切斷水或溶劑等之分子中的氫鍵的性能優異,所以藉由選擇反射體使該紅外線透過,而可更高效率地對乾燥對象進行乾燥。又,亦可選擇反射體係不僅波長未滿2μm之紅外線,而且對波長比紅外線更短之未滿0.7μm之電磁波的至少一部分亦可反射。在此情況,亦可紅外線吸收體係亦可吸收波長比紅外線更短之未滿0.7μm之電磁波的至少一部分。又,選擇反射體及紅外線吸收體係亦可採用形成於其他的構件之表面之層狀(膜狀)的形態,亦可採用獨立之構件的形態。 In the drying furnace of the present invention, when an electromagnetic wave containing infrared rays is radiated from the heat generating body of the infrared heater, the infrared rays having a wavelength of less than 2 μm in the electromagnetic wave are reflected by the selected reflector in the direction of the drying target. Therefore, it is possible to suppress infrared rays having a wavelength of less than 2 μm from reaching the object to be dried in a straight line. Further, the infrared ray reflected by the selected reflector is radiated from the selective reflector to the heat generating body side, but is absorbed by the infrared absorbing body. Therefore, it is also possible to suppress the infrared rays reflected by the selected reflector from being reflected by the furnace body or the like to reach the drying target side. According to the above, it is possible to further suppress overheating of the drying target caused by infrared rays having a wavelength of less than 2 μm from the infrared heater. Further, since the infrared ray having a wavelength of 2 μm to 4 μm radiated from the infrared heater can be passed to the object to be dried after passing through the selection of the reflector, the object to be dried can be dried by the infrared ray. In this case, The reflection system is selected to transmit at least a part of the infrared rays having a wavelength of from 2 μm to 3.5 μm. Infrared rays having a wavelength of 3.5 μm or less are excellent in the performance of hydrogen bonding in molecules such as water or solvent, so that the infrared rays are transmitted by selecting a reflector, and the object to be dried can be dried more efficiently. Further, it is also possible to select not only the infrared ray having a wavelength of less than 2 μm but also at least a part of the electromagnetic wave having a wavelength shorter than the infrared ray of less than 0.7 μm. In this case, the infrared absorbing system may also absorb at least a part of electromagnetic waves having a wavelength shorter than infrared rays and less than 0.7 μm. Further, the selective reflector and the infrared ray absorbing system may be in the form of a layered (film-like) formed on the surface of another member, or may be in the form of an independent member.

在此情況,選擇反射體係波長2μm~4μm之紅外線的透過率比波長未滿2μm之紅外線的透過率更高者較佳。此外,「波長2μm~4μm之紅外線的透過率比波長未滿2μm之紅外線的透過率更高」,這係除了波長2μm~4μm之紅外線的全透過率比波長未滿2μm之紅外線的全透過率更高的情況以外,還包含成為比波長未滿2μm之紅外線的全透過率更高之波長的範圍存在於波長2μm~4μm之範圍的情況。例如,亦可選擇反射體採用波長未滿2μm之紅外線的全透過率是20%以下,波長2μm~4μm之紅外線的全透過率是80%以上。又,亦可選擇反射體採用波長2μm~3.5μm之紅外線的全透過率是80%以上。 In this case, it is preferable that the transmittance of infrared rays having a reflection system wavelength of 2 μm to 4 μm is higher than that of infrared rays having a wavelength of less than 2 μm. In addition, "the transmittance of infrared rays having a wavelength of 2 μm to 4 μm is higher than the transmittance of infrared rays having a wavelength of less than 2 μm", which is a total transmittance of infrared rays having a wavelength of 2 μm to 4 μm than that of infrared rays having a wavelength of less than 2 μm. In addition to the higher case, the range of the wavelength higher than the total transmittance of infrared rays having a wavelength of less than 2 μm is included in the range of 2 μm to 4 μm. For example, the total transmittance of infrared rays having a wavelength of less than 2 μm may be 20% or less, and the total transmittance of infrared rays having a wavelength of 2 μm to 4 μm may be 80% or more. Further, it is also possible to select a reflector having a total transmittance of 80% or more of infrared rays having a wavelength of 2 μm to 3.5 μm.

在本發明之乾燥爐,亦可該紅外線加熱器具有使波長2μm~4μm之紅外線的至少一部分透過並包圍該發熱體的管狀構件,該管狀構件係在內周面與外周面之至少一方中,在 包含從該發熱體觀察時與該紅外線吸收體係相反側之區域具有該選擇反射體。依此方式,不將選擇反射體作為與紅外線加熱器係不同的構件配置於爐體內,而可更抑制來自紅外線加熱器之波長未滿2μm的紅外線所造成之乾燥對象的過熱。 In the drying furnace of the present invention, the infrared heater may have a tubular member that transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm and surrounds the heat generating body, and the tubular member is at least one of an inner peripheral surface and an outer peripheral surface. in The selective reflection body is included in a region on the side opposite to the infrared absorption system when viewed from the heat generating body. In this manner, the selective reflector is not disposed in the furnace as a member different from the infrared heater, and the overheating of the drying target caused by the infrared rays having a wavelength of less than 2 μm from the infrared heater can be further suppressed.

在此情況,該紅外線加熱器具有:第1管,係使波長2μm~4μm之紅外線的至少一部分透過並包圍該發熱體;及第2管,係包圍該發熱體及該第1管之該管狀構件;該第1管係在內周面與外周面之至少一方中,在包含從該發熱體觀察時與該乾燥對象係相反側之區域具有反射波長2μm~4μm之紅外線的至少一部分的反射層。依此方式,從紅外線加熱器之發熱體在與乾燥對象係相反方向所放射之電磁波中波長2μm~4μm的紅外線係被反射層所反射。因此,可將此波長之紅外線高效率地照射於乾燥對象,而乾燥效率提高。 In this case, the infrared heater includes: a first tube that transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm and surrounds the heat generating body; and a second tube that surrounds the heat generating body and the tubular portion of the first tube In the at least one of the inner circumferential surface and the outer circumferential surface, the first tube has a reflection layer that reflects at least a part of infrared rays having a wavelength of 2 μm to 4 μm in a region on the side opposite to the drying target when viewed from the heating element. . In this manner, the infrared ray having a wavelength of 2 μm to 4 μm reflected from the electromagnetic wave radiated from the heat generating body of the infrared heater in the opposite direction to the drying target is reflected by the reflective layer. Therefore, the infrared rays of this wavelength can be efficiently irradiated to the object to be dried, and the drying efficiency is improved.

在本發明之乾燥爐,亦可包括間壁,該間壁係在該爐體內隔開配置該紅外線加熱器的空間與配置該乾燥對象的空間,並使波長2μm~4μm之紅外線的至少一部分透過;該間壁具有該選擇反射體。依此方式,因為配置該紅外線加熱器的空間與配置該乾燥對象的空間被隔開,所以即使在前者的空間或該空間內的物體、面向該空間之爐體等因波長未滿2μm之紅外線而變成過熱的情況,乾燥對象亦難變成過熱。因此,可更抑制來自紅外線加熱器之波長未滿2μm的紅外線所造成之乾燥對象的過熱。在此,「該間壁具有該選擇反射體」意指包含間壁整體是選擇反射體的情況。又,亦可間壁係採用在表面整體具有選擇反射體者。 The drying furnace of the present invention may further include a partition wall in which a space in which the infrared heater is disposed and a space in which the object to be dried is disposed, and at least a part of infrared rays having a wavelength of 2 μm to 4 μm are transmitted through the furnace body. The partition has the selective reflector. In this way, since the space in which the infrared heater is disposed is separated from the space in which the object to be dried is disposed, even in the space of the former, the object in the space, the furnace body facing the space, or the like, the infrared light having a wavelength of less than 2 μm In the case of overheating, it is difficult for the dry object to become overheated. Therefore, it is possible to further suppress overheating of the object to be dried due to infrared rays having a wavelength of less than 2 μm from the infrared heater. Here, "the partition has the selective reflector" means a case where the entire partition is a selective reflector. Further, the partition wall may be a one having a selective reflector on the entire surface.

在包括上述之間壁的形態之本發明的乾燥爐,亦可該爐體係在內周面具有該紅外線吸收體。依此方式,不將紅外線吸收體作為獨立之構件配置於爐體內,而可藉紅外線吸收體吸收被選擇反射體所反射的紅外線。 In the drying furnace of the present invention including the form of the above-mentioned partition wall, the furnace system may have the infrared absorber on the inner peripheral surface. In this manner, the infrared absorbing body is not disposed as an independent member in the furnace body, and the infrared ray absorbing body absorbs the infrared ray reflected by the selected reflector.

在本發明之乾燥爐,亦可該紅外線吸收體係在內部具有冷媒可流通之冷媒流路。依此方式,因為可藉冷媒冷卻紅外線吸收體,所以可更抑制紅外線吸收體吸收紅外線而變成過熱,而可更抑制紅外線吸收體之過熱對乾燥對象的不良影響(例如乾燥對象之過熱等)。 In the drying furnace of the present invention, the infrared absorbing system may have a refrigerant flow path through which the refrigerant can flow. In this manner, since the infrared absorber can be cooled by the refrigerant, the infrared absorber can be further prevented from absorbing infrared rays and becoming overheated, and the adverse effect of the overheating of the infrared absorber on the object to be dried (for example, overheating of the object to be dried) can be further suppressed.

10、110‧‧‧乾燥爐 10, 110‧‧‧ drying oven

12‧‧‧爐體 12‧‧‧ furnace body

12a‧‧‧空間 12a‧‧‧ Space

13‧‧‧前端面 13‧‧‧ front end

14‧‧‧後端面 14‧‧‧ rear end face

15、16‧‧‧開口 15, 16‧‧‧ openings

17、18‧‧‧輥 17, 18‧‧‧ Roll

19‧‧‧搬運通路 19‧‧‧Transportation

20‧‧‧供氣裝置 20‧‧‧ gas supply

21‧‧‧供氣風扇 21‧‧‧Air supply fan

22‧‧‧管構造體 22‧‧‧ tube structure

23‧‧‧供氣口 23‧‧‧ gas supply port

25‧‧‧排氣裝置 25‧‧‧Exhaust device

26‧‧‧排氣風扇 26‧‧‧Exhaust fan

27‧‧‧管構造體 27‧‧‧ tube structure

28‧‧‧排氣口 28‧‧‧Exhaust port

30、130‧‧‧紅外線加熱器 30, 130‧‧‧ Infrared heater

31‧‧‧燈絲 31‧‧‧ filament

31a‧‧‧電配線 31a‧‧‧Electric wiring

32‧‧‧內管 32‧‧‧Inside

33‧‧‧加熱器本體 33‧‧‧ heater body

34‧‧‧第1外管 34‧‧‧1st outer tube

35‧‧‧第2外管 35‧‧‧2nd outer tube

36‧‧‧反射層 36‧‧‧reflective layer

37、137‧‧‧選擇反射層 37, 137‧‧‧Select reflective layer

39‧‧‧冷媒流路 39‧‧‧Refrigerant flow path

40‧‧‧帽 40‧‧‧Cap

42~43‧‧‧圓筒部 42~43‧‧‧Cylinder

44‧‧‧蓋 44‧‧‧ Cover

45‧‧‧支架 45‧‧‧ bracket

47‧‧‧配線拉出部 47‧‧‧Wiring pull out

48‧‧‧流體出入口 48‧‧‧ Fluid inlet and outlet

49‧‧‧溫度感測器 49‧‧‧temperature sensor

50‧‧‧電力供給源 50‧‧‧Power supply

60‧‧‧第1冷媒供給源 60‧‧‧1st refrigerant supply source

61‧‧‧開閉閥 61‧‧‧Opening and closing valve

62‧‧‧流量調整閥 62‧‧‧Flow adjustment valve

65‧‧‧第2冷媒供給源 65‧‧‧2nd refrigerant supply source

66‧‧‧開閉閥 66‧‧‧Opening and closing valve

67‧‧‧流量調整閥 67‧‧‧Flow adjustment valve

70‧‧‧紅外線吸收板 70‧‧‧Infrared absorption board

78‧‧‧流體出入口 78‧‧‧ Fluid inlet and outlet

79‧‧‧冷媒流路 79‧‧‧Refrigerant flow path

80‧‧‧薄片 80‧‧‧Sheet

82‧‧‧塗膜 82‧‧·coating film

90‧‧‧控制器 90‧‧‧ Controller

170‧‧‧紅外線吸收層 170‧‧‧Infrared absorption layer

185‧‧‧間壁 185‧‧‧ partition

第1圖係乾燥爐10之縱向剖面圖。 Fig. 1 is a longitudinal sectional view of the drying furnace 10.

第2圖係表示第1圖之紅外線加熱器30與紅外線吸收板70之剖面的A-A剖面圖。 Fig. 2 is a cross-sectional view along the line A-A showing a cross section of the infrared heater 30 and the infrared absorbing plate 70 of Fig. 1.

第3圖係表示從紅外線加熱器30所放射之紅外線的波長特性之一例的說明圖。 Fig. 3 is an explanatory view showing an example of wavelength characteristics of infrared rays radiated from the infrared heater 30.

第4圖係變形例之乾燥爐110的縱向剖面圖。 Fig. 4 is a longitudinal sectional view of a drying furnace 110 according to a modification.

其次,使用圖面,說明本發明之實施形態。第1圖係本發明之一實施形態乾燥爐10的縱向剖面圖。乾燥爐10係使用紅外線進行被塗佈於薄片80上之作為乾燥對象之塗膜82的乾燥,並包括爐體12、供氣裝置20、排氣裝置25、紅外線加熱器30、紅外線吸收板70及控制器90。又,乾燥爐10包括設置於爐體12之前方(第1圖之左側)的輥17、與設置於 爐體12之後方(第1圖之右側)的輥18。此乾燥爐10係作為藉輥17、18連續地搬運在上面已形成塗膜82之薄片80並進行乾燥之輥對輥方式的乾燥爐所構成。 Next, an embodiment of the present invention will be described using the drawings. Fig. 1 is a longitudinal sectional view showing a drying furnace 10 according to an embodiment of the present invention. The drying furnace 10 performs drying of the coating film 82 to be dried, which is applied to the sheet 80 by infrared rays, and includes a furnace body 12, a gas supply device 20, an exhaust device 25, an infrared heater 30, and an infrared absorption plate 70. And controller 90. Further, the drying furnace 10 includes a roller 17 disposed in front of the furnace body 12 (on the left side of FIG. 1), and is provided on The roller 18 behind the furnace body 12 (on the right side of Fig. 1). This drying furnace 10 is constituted by a roll-to-roll drying furnace in which the sheet 80 on which the coating film 82 has been formed is continuously conveyed by the rollers 17 and 18 and dried.

爐體12係用以進行塗膜82之乾燥。爐體12係形成大致長方體之隔熱構造體,並具有:係內部之空間的空間12a、及分別形成於爐體之前端面13及後端面14並成為從外部往空間12a之出入口的開口15、16。爐體12係從前端面13至後端面14的長度為例如2~10m。爐體12包括是從開口17至開口18之通路的搬運通路19。搬運通路19係在水平方向貫穿爐體12。在單面被塗佈塗膜82之薄片80係逐漸通過此搬運通路19。 The furnace body 12 is used to dry the coating film 82. The furnace body 12 is a heat insulating structure having a substantially rectangular parallelepiped shape, and has a space 12a for a space inside the furnace, and an opening 15 formed in the front end surface 13 and the rear end surface 14 of the furnace body, respectively, and opening and exiting from the outside to the space 12a. 16. The length of the furnace body 12 from the front end surface 13 to the rear end surface 14 is, for example, 2 to 10 m. The furnace body 12 includes a handling passage 19 that is a passage from the opening 17 to the opening 18. The conveyance path 19 penetrates the furnace body 12 in the horizontal direction. The sheet 80 on which the coating film 82 is applied on one side gradually passes through the conveyance path 19.

供氣裝置20係將流體供給(送風)至薄片80的表面側而使通過爐體12內之塗膜82或薄片80冷卻的裝置。供氣裝置20包括供氣風扇21、管構造體22及供氣口23。供氣風扇21係被安裝於管構造體22,並向管構造體22之內部供給流體。流體係可冷卻薄片80之冷風,例如是常溫或50℃以下的空氣。供氣風扇21可調整流體之流量或溫度。管構造體22成為來自供氣風扇21之流體的通路。管構造體22形成從供氣風扇21貫穿爐體12之天花板並至爐體12之內部的通路。供氣口23係成為來自供氣風扇21的流體之往爐體12的供給口。此供氣口23係設置於爐體12中是薄片80之搬出側的開口16側的端部,並朝向是搬入側的開口15側水平地開口。藉此,供氣裝置20係在與薄片80之搬運方向係相反方向(在第1圖之左方向)供給流體。 The air supply device 20 is a device that supplies (steams) fluid to the surface side of the sheet 80 to cool the coating film 82 or the sheet 80 in the furnace body 12. The air supply device 20 includes an air supply fan 21, a pipe structure 22, and an air supply port 23. The air supply fan 21 is attached to the pipe structure 22, and supplies a fluid to the inside of the pipe structure 22. The flow system can cool the cold air of the sheet 80, for example, air at normal temperature or below 50 °C. The air supply fan 21 can adjust the flow rate or temperature of the fluid. The pipe structure 22 serves as a passage for the fluid from the air supply fan 21. The pipe structure 22 forms a passage from the ceiling of the furnace body 12 to the inside of the furnace body 12 from the air supply fan 21. The air supply port 23 is a supply port of the fluid from the air supply fan 21 to the furnace body 12. The air supply port 23 is provided at the end of the furnace body 12 on the side of the opening 16 on the carrying-out side of the sheet 80, and is horizontally opened toward the opening 15 side of the loading side. Thereby, the air supply device 20 supplies the fluid in a direction opposite to the conveyance direction of the sheet 80 (in the left direction of the first drawing).

排氣裝置25係排出爐體12內之環境氣體的裝置。排氣裝置25包括排氣風扇26、管構造體27、及排氣口28。排氣口28係設置於爐體12中是薄片80之搬入側的開口15側的端部,並朝向是搬出側的開口16側水平地開口。排氣口28係被安裝於管構造體27,並吸入爐體12內之環境氣體(主要沿著塗膜82的表面流動後之來自供氣裝置20的送風)並引導至管構造體27內。管構造體27成為從排氣口28往排氣風扇26之環境氣體的流路。管構造體27形成從排氣口28貫穿爐體12的天花板並至排氣風扇26的通路。排氣風扇26係被安裝於管構造體27,並排出管構造體27內部之環境氣體。 The exhaust unit 25 is a device that discharges the ambient gas in the furnace body 12. The exhaust device 25 includes an exhaust fan 26, a pipe structure 27, and an exhaust port 28. The exhaust port 28 is provided in the furnace body 12 at the end on the opening 15 side of the loading side of the sheet 80, and is horizontally opened toward the opening 16 side of the carry-out side. The exhaust port 28 is attached to the pipe structure 27, and is sucked into the atmosphere of the furnace body 12 (air supply from the air supply device 20 mainly flowing along the surface of the coating film 82) and guided into the pipe structure 27 . The pipe structure 27 serves as a flow path of the ambient gas from the exhaust port 28 to the exhaust fan 26. The pipe structure 27 forms a passage that passes through the ceiling of the furnace body 12 from the exhaust port 28 to the exhaust fan 26. The exhaust fan 26 is attached to the pipe structure 27 and discharges the atmosphere inside the pipe structure 27.

紅外線加熱器30係將紅外線照射於通過爐體12內之塗膜82的裝置,在爐體12內之空間12a的天花板附近安裝複數個。在本實施形態,紅外線加熱器30係在從前端面13側至後端面14側大致均勻地配置複數支(在本實施形態為6支)。此複數支紅外線加熱器30係都採用相同的構成,並被安裝成其長邊方向與塗膜82的搬運方向正交。以下,說明一支紅外線加熱器30的構成。 The infrared heater 30 is a device that irradiates infrared rays to the coating film 82 that has passed through the furnace body 12, and a plurality of them are mounted in the vicinity of the ceiling of the space 12a in the furnace body 12. In the present embodiment, the infrared heater 30 is disposed substantially evenly from the distal end surface 13 side to the rear end surface 14 side (in the present embodiment, six branches). The plurality of infrared heaters 30 have the same configuration and are mounted such that their longitudinal directions are orthogonal to the conveyance direction of the coating film 82. Hereinafter, the configuration of one infrared heater 30 will be described.

第2圖係表示第1圖之紅外線加熱器30與紅外線吸收板70之剖面的A-A剖面圖。此外,第2圖所示之剖面係被切斷成通過加熱器本體33之中心線的面。如第1圖、第2圖所示,紅外線加熱器30包括以內管32包圍鎢製之燈絲31的方式所形成之加熱器本體33、設置於該加熱器本體33之外側並以包圍內管32之方式所形成的第1外管34、及設置於第1外管34之外側並以包圍第1外管34之方式所形成的第2外 管35,帽40被安裝於這些構件的兩端(第2圖)。第1外管34與第2外管35之間的空間成為可使冷媒(例如空氣)流通的冷媒流路39。又,紅外線加熱器30包括檢測出第2外管35之表面溫度的溫度感測器49(參照第2圖)。溫度感測器49係在本實施形態如第2圖所示配置於第2外管35中之塗膜82側(第1圖、第2圖之下側)。此外,內管32、第1外管34及第2外管35係配置成同心圓狀,且燈絲31位於該圓之中心。 Fig. 2 is a cross-sectional view along the line A-A showing a cross section of the infrared heater 30 and the infrared absorbing plate 70 of Fig. 1. Further, the cross section shown in Fig. 2 is cut into a surface that passes through the center line of the heater body 33. As shown in FIGS. 1 and 2, the infrared heater 30 includes a heater body 33 formed to surround the tungsten filament 31 with the inner tube 32, and is disposed outside the heater body 33 to surround the inner tube 32. The first outer tube 34 formed in the manner and the second outer side formed on the outer side of the first outer tube 34 and surrounding the first outer tube 34 The tube 35 and the cap 40 are attached to both ends of these members (Fig. 2). The space between the first outer tube 34 and the second outer tube 35 serves as a refrigerant flow path 39 through which a refrigerant (for example, air) can flow. Further, the infrared heater 30 includes a temperature sensor 49 (see FIG. 2) that detects the surface temperature of the second outer tube 35. The temperature sensor 49 is disposed on the side of the coating film 82 in the second outer tube 35 as shown in Fig. 2 (the lower side of Fig. 1 and Fig. 2). Further, the inner tube 32, the first outer tube 34, and the second outer tube 35 are arranged concentrically, and the filament 31 is located at the center of the circle.

加熱器本體33係由兩端配置於帽40之內部的支架45所支撐。此加熱器本體33係從配置於爐體12之外部的電力供給源50(參照第2圖)往燈絲31被供給電力,燈絲31被加熱至既定溫度(例如1200~1700℃)時,放射包含紅外線之電磁波。燈絲31所放射之電磁波係無特別限定,例如是尖峰波長位於紅外線區域(波長為0.7μm~8μm之區域)或近紅外線區域(波長為0.7μm~3.5μm之區域)者。在本實施形態,採用放射尖峰波長為3.5μm附近之電磁波者。內管32係包圍燈絲31之截面圓形的管,由吸收從燈絲31所放射之電磁波的一部分且使紅外線透過之紅外線透過材料所形成。作為內管32所使用之這種紅外線透過材料,例如列舉鍺、矽、藍寶石、氟化鈣、氟化鋇、硒化鋅、硫化鋅、硫硒碲玻璃、透過性氧化鋁陶瓷等以外,還有可使紅外線透過之石英玻璃等。在本實施形態,內管32採用藉上述之紅外線透過材料中吸收作為電磁波之一部分波長超過4μm的紅外線且使波長為4μm以下之紅外線透過的石英玻璃所形成者。又,內管32之內部成為真空環境或鹵素環境氣體。與此燈絲31連接之電配線31a係經由設置於帽 40之配線拉出部47氣密地被拉往外部,並與電力供給源50連接。帽40係如第2圖所示,係將圓盤狀之蓋44與立設於該蓋44之圓筒部42、43一體成形者。第1外管34及第2外管35之左右兩端分別被固定於圓筒部42、43。 The heater body 33 is supported by a bracket 45 whose both ends are disposed inside the cap 40. The heater main body 33 supplies electric power to the filament 31 from a power supply source 50 (see FIG. 2) disposed outside the furnace body 12. When the filament 31 is heated to a predetermined temperature (for example, 1200 to 1700 ° C), the radiation includes Infrared electromagnetic waves. The electromagnetic wave radiated by the filament 31 is not particularly limited, and is, for example, a peak wavelength in an infrared region (a region having a wavelength of 0.7 μm to 8 μm) or a near-infrared region (a region having a wavelength of 0.7 μm to 3.5 μm). In the present embodiment, an electromagnetic wave having a radiation peak wavelength of around 3.5 μm is used. The inner tube 32 is a tube having a circular cross section surrounding the filament 31, and is formed by a material that absorbs a part of electromagnetic waves radiated from the filament 31 and transmits infrared rays. Examples of the infrared ray transmissive material used for the inner tube 32 include yttrium, lanthanum, sapphire, calcium fluoride, yttrium fluoride, zinc selenide, zinc sulfide, sulphur selenide glass, and translucent alumina ceramics. There are quartz glass that allows infrared rays to pass through. In the present embodiment, the inner tube 32 is formed of quartz glass which absorbs infrared rays having a wavelength of more than 4 μm as one of electromagnetic waves and transmits infrared rays having a wavelength of 4 μm or less. Further, the inside of the inner tube 32 is a vacuum environment or a halogen atmosphere. The electric wiring 31a connected to the filament 31 is disposed through the cap The wiring pull-out portion 47 of 40 is airtightly pulled to the outside and connected to the power supply source 50. As shown in Fig. 2, the cap 40 is formed by integrally forming a disk-shaped cover 44 with the cylindrical portions 42 and 43 which are erected on the cover 44. The left and right ends of the first outer tube 34 and the second outer tube 35 are fixed to the cylindrical portions 42 and 43, respectively.

第1外管34及第2外管35係藉上述之紅外線透過材料所形成的管。在本實施形態,第1外管34及第2外管35係與內管32一樣,採用藉吸收波長超過4μm之紅外線且使波長為4μm以下之紅外線透過的石英玻璃材料所形成者。此外,第1外管34、第2外管35係可藉在冷媒流路39流動之冷媒冷卻至例如200℃以下。 The first outer tube 34 and the second outer tube 35 are tubes formed by the above-described infrared ray transmissive material. In the present embodiment, the first outer tube 34 and the second outer tube 35 are formed of a quartz glass material that absorbs infrared rays having a wavelength of more than 4 μm and transmits infrared rays having a wavelength of 4 μm or less, similarly to the inner tube 32. Further, the first outer tube 34 and the second outer tube 35 can be cooled to, for example, 200 ° C or lower by the refrigerant flowing through the refrigerant flow path 39.

在第1外管34之外周面,形成反射層36。此反射層36形成於第1外管34的外周面中包含從燈絲31觀察時與塗膜82係相反側(第1圖之上側)的區域,並設置成僅包覆燈絲31之周圍的一部分。在本實施形態,反射層36採用完全包覆第1外管34之上側一半。反射層36配置成燈絲31位於包含其截面之圓弧的圓的中心位置。此反射層36係藉反射從燈絲31所放射之電磁波中紅外線之至少一部分的紅外線反射材料所形成。作為紅外線反射材料,列舉例如金、白金、鋁等。在本實施形態,反射層36採用藉反射波長2μm~4μm之紅外線的至少一部分的材料所形成者。此反射層36係藉由使用塗佈乾燥、濺鍍或CVD、熱噴塗之成膜方法使紅外線反射材料成膜於第1外管34的表面所形成。又,反射層36係面向冷媒流路39,並藉在冷媒流路39流動之冷媒所冷卻。 A reflective layer 36 is formed on the outer peripheral surface of the first outer tube 34. The reflection layer 36 is formed on the outer peripheral surface of the first outer tube 34 and includes a region on the side opposite to the coating film 82 (the upper side in the first drawing) when viewed from the filament 31, and is provided to cover only a part of the periphery of the filament 31. . In the present embodiment, the reflective layer 36 is completely covered with the upper half of the first outer tube 34. The reflective layer 36 is configured such that the filament 31 is located at a central position of a circle including an arc of its cross section. The reflective layer 36 is formed by an infrared reflective material that reflects at least a portion of the infrared rays emitted from the electromagnetic waves emitted from the filament 31. Examples of the infrared reflective material include gold, platinum, aluminum, and the like. In the present embodiment, the reflective layer 36 is formed of a material that reflects at least a part of infrared rays having a wavelength of 2 μm to 4 μm. The reflective layer 36 is formed by forming a film of the infrared reflecting material on the surface of the first outer tube 34 by a film forming method using coating drying, sputtering, CVD, or thermal spraying. Further, the reflective layer 36 faces the refrigerant flow path 39 and is cooled by the refrigerant flowing through the refrigerant flow path 39.

在第2外管35的外周面,形成選擇反射層37。此 選擇反射層37係配置成在爐體12的空間12a內位於燈絲31與塗膜82之間。更具體而言,選擇反射層37形成於第2外管35的外周面中包含從燈絲31觀察時與塗膜82係相同側(第1圖之下側)的區域,並設置成僅包覆燈絲31之周圍的一部分。在本實施形態,選擇反射層37採用完全包覆第2外管35之下側一半。選擇反射層37配置成燈絲31位於包含其截面之圓弧的圓的中心位置。此選擇反射層37係藉反射從燈絲31所放射之電磁波中波長未滿2μm之紅外線的至少一部分且使波長2μm~4μm之紅外線的至少一部分透過的選擇反射材料所形成。藉此,選擇反射層37作用為使波長2μm~4μm之紅外線選擇性透過的濾光器。選擇反射層37採用波長2μm~4μm之紅外線的透過率比波長未滿2μm之紅外線的透過率更高者較佳。在本實施形態,選擇反射層37採用波長未滿2μm之紅外線的全透過率是20%以下,波長2μm~4μm之紅外線的全透過率是80%以上者。此外,選擇反射層37係亦可採用使波長超過4μm之電磁波透過者,亦可採用使波長超過4μm之電磁波反射者。在前者的情況,選擇反射層37作用為低通濾光器,在後者的情況,選擇反射層37作用為帶通濾光器。在本實施形態,選擇反射層37採用使波長超過4μm之電磁波透過者。依此方式可反射特定之波長區域的電磁波之選擇反射層37係例如使用將包含膽固醇狀液晶材料之塗膜塗佈於第2外管35的表面並使其乾燥及硬化的成膜方法使選擇反射材料成膜並形成。此外,亦可逐層逐漸重複塗佈膽固醇狀液晶的膜,而形成由複數層膽固醇狀液晶層所構成之選擇反射材料,作為選擇反射層37。關 於這種選擇反射材料的形成,記載於例如日本特開2012-181359號公報。 A selective reflection layer 37 is formed on the outer circumferential surface of the second outer tube 35. this The selective reflection layer 37 is disposed between the filament 31 and the coating film 82 in the space 12a of the furnace body 12. More specifically, the selective reflection layer 37 is formed on the outer peripheral surface of the second outer tube 35 and includes a region on the same side as the coating film 82 (the lower side in the first drawing) when viewed from the filament 31, and is provided only to be coated. A portion of the circumference of the filament 31. In the present embodiment, the selective reflection layer 37 is formed by completely covering the lower half of the second outer tube 35. The selective reflection layer 37 is configured such that the filament 31 is located at a center position of a circle including a circular arc of its cross section. The selective reflection layer 37 is formed by reflecting a selective reflection material that transmits at least a part of the infrared rays having a wavelength of less than 2 μm from the electromagnetic wave radiated from the filament 31 and transmits at least a part of the infrared rays having a wavelength of 2 μm to 4 μm. Thereby, the reflection layer 37 is selected to function as a filter that selectively transmits infrared rays having a wavelength of 2 μm to 4 μm. The selective reflection layer 37 is preferably one having a transmittance of infrared rays having a wavelength of from 2 μm to 4 μm and a transmittance of infrared rays having a wavelength of less than 2 μm. In the present embodiment, the selective reflection layer 37 has a total transmittance of 20% or less of infrared rays having a wavelength of less than 2 μm, and a total transmittance of infrared rays having a wavelength of 2 μm to 4 μm of 80% or more. Further, the selective reflection layer 37 may be such that electromagnetic waves having a wavelength exceeding 4 μm are transmitted, or electromagnetic waves having a wavelength exceeding 4 μm may be used. In the former case, the selective reflection layer 37 functions as a low-pass filter, and in the latter case, the selective reflection layer 37 functions as a band-pass filter. In the present embodiment, the selective reflection layer 37 is made to transmit electromagnetic waves having a wavelength exceeding 4 μm. The selective reflection layer 37 which can reflect electromagnetic waves in a specific wavelength region in this manner is selected, for example, by a film formation method in which a coating film containing a cholesteric liquid crystal material is applied onto the surface of the second outer tube 35 and dried and hardened. The reflective material is formed into a film and formed. Further, the film of the condensed liquid crystal may be gradually applied layer by layer to form a selective reflection material composed of a plurality of cholesteric liquid crystal layers as the selective reflection layer 37. turn off The formation of such a selective reflection material is described in, for example, Japanese Laid-Open Patent Publication No. 2012-181359.

冷媒流路39係第1外管34與第2外管35之間的空間,冷媒可經由設置於帽40之流體出入口48流通。冷媒係例如空氣等之流體。流體出入口48係與配置於爐體12之外部的第1冷媒供給源60連接。從該第1冷媒供給源60所供給之冷媒係從一方之流體出入口48流入冷媒流路39內後,在冷媒流路39內流通,再從另一方之流體出入口48流出。在冷媒流路39流通之冷媒係發揮降低是紅外線加熱器30的外面之第2外管35的溫度或第1外管34的溫度、或調整至任意之溫度的功用。 The refrigerant flow path 39 is a space between the first outer tube 34 and the second outer tube 35, and the refrigerant can flow through the fluid inlet and outlet 48 provided in the cap 40. The refrigerant is a fluid such as air. The fluid inlet and outlet 48 is connected to a first refrigerant supply source 60 disposed outside the furnace body 12. The refrigerant supplied from the first refrigerant supply source 60 flows into the refrigerant flow path 39 from one of the fluid inlets and outlets 48, flows through the refrigerant flow path 39, and flows out from the other fluid inlet and outlet 48. The refrigerant flowing through the refrigerant flow path 39 functions to lower the temperature of the second outer tube 35 on the outer surface of the infrared heater 30 or the temperature of the first outer tube 34 or to adjust to an arbitrary temperature.

紅外線吸收板70係吸收從紅外線加熱器30所放射之紅外線之大致長方體的構件,在爐體12內之空間12a的天花板與紅外線加熱器30之間,安裝複數個。在本實施形態,紅外線吸收板70係配置6個,各紅外線吸收板70與紅外線加熱器30一對一對應,並安裝於對應之紅外線加熱器30與爐體12的天花板之間。即,紅外線吸收板70配置於在爐體12的空間12a內從紅外線加熱器30之燈絲31觀察時與選擇反射層37係相反側(第1圖、第2圖之上側)。此複數個紅外線吸收板70係都採用相同的構成,並被安裝成長邊方向與搬運方向正交。以下,說明一個紅外線吸收板70的構成。 The infrared ray absorbing plate 70 is a member that absorbs the substantially rectangular parallelepiped of the infrared ray emitted from the infrared ray heater 30, and is mounted between the ceiling of the space 12a in the furnace body 12 and the infrared ray heater 30. In the present embodiment, six infrared ray absorbing plates 70 are disposed, and each of the infrared absorbing plates 70 is in one-to-one correspondence with the infrared ray heater 30, and is mounted between the corresponding infrared heater 30 and the ceiling of the furnace body 12. In other words, the infrared ray absorbing plate 70 is disposed on the side opposite to the selective reflection layer 37 when viewed from the filament 31 of the infrared heater 30 in the space 12a of the furnace body 12 (the upper side of the first drawing and the second drawing). The plurality of infrared absorbing plates 70 have the same configuration, and are mounted in the direction in which the growth direction is orthogonal to the conveyance direction. Hereinafter, the configuration of one infrared absorbing plate 70 will be described.

紅外線吸收板70係如第1圖所示,以前後方向的寬度(第1圖之左右的寬度)比紅外線加熱器30之外徑更大的方式所形成。又,紅外線吸收板70配置成覆蓋紅外線加熱器30 之與塗膜82係相反側的區域(在第1圖、第2圖之紅外線加熱器30之正上的區域)。此紅外線吸收板70係藉可吸收波長未滿2μm之紅外線的至少一部分之紅外線吸收材料所形成。作為紅外線吸收板70所使用之紅外線吸收材料,列舉例如將溶化Si浸漬於包含SiC之多孔質體而成的Si-SiC系複合材料(矽浸漬SiC)等。紅外線吸收板70係內部成為中空,而此內部的空間成為冷媒流路79。此冷媒流路79係冷媒可經由設置於紅外線吸收板70之2處的流體出入口78流通。冷媒係只要是流體即可,例如亦可採用空氣等之氣體,亦可採用水等之液體。在本實施形態,冷媒採用水。流體出入口78係與配置於爐體12之外部的第2冷媒供給源65連接。從該第2冷媒供給源65所供給之冷媒係從一方之流體出入口78流入冷媒流路79內後,在冷媒流路79內流通,再從另一方之流體出入口78流出。在冷媒流路79流通之冷媒發揮降低吸收紅外線而被加熱之紅外線吸收板70之溫度的功用。此外,紅外線吸收板70係可藉在冷媒流路79流動之冷媒冷卻至例如200℃以下。 As shown in FIG. 1, the infrared ray absorbing plate 70 is formed such that the width in the front-rear direction (the width on the left and right in the first drawing) is larger than the outer diameter of the infrared heater 30. Further, the infrared absorbing plate 70 is disposed to cover the infrared heater 30 The region on the opposite side of the coating film 82 (the region directly above the infrared heater 30 in FIGS. 1 and 2). The infrared absorbing plate 70 is formed of an infrared absorbing material that can absorb at least a part of infrared rays having a wavelength of less than 2 μm. The infrared absorbing material used for the infrared ray absorbing plate 70 is, for example, a Si-SiC composite material (yttrium-impregnated SiC) obtained by immersing the melted Si in a porous body containing SiC. The infrared ray absorbing plate 70 is hollow inside, and the internal space becomes the refrigerant flow path 79. The refrigerant flow path 79 is a refrigerant that can flow through the fluid inlet and outlet 78 provided at two places of the infrared absorption plate 70. The refrigerant may be any fluid, and for example, a gas such as air may be used, or a liquid such as water may be used. In the present embodiment, the refrigerant is water. The fluid inlet and outlet 78 is connected to a second refrigerant supply source 65 disposed outside the furnace body 12. The refrigerant supplied from the second refrigerant supply source 65 flows into the refrigerant flow path 79 from one of the fluid inlets and outlets 78, flows through the refrigerant flow path 79, and flows out from the other fluid inlet and outlet 78. The refrigerant that has flowed through the refrigerant flow path 79 functions to lower the temperature of the infrared absorbing plate 70 that is heated to absorb infrared rays. Further, the infrared ray absorbing plate 70 can be cooled to, for example, 200 ° C or lower by the refrigerant flowing through the refrigerant flow path 79.

薄片80係無特別限定,例如是樹脂製之薄片,在本實施形態採用由PET薄膜所構成者。薄片80係無特別限定,例如是厚度10~100μm、寬度200~1000mm。又,塗膜82係被塗佈於薄片80的上面,係例如在乾燥後用作MLCC(積層陶瓷電容器)用的薄膜。塗膜82係例如包含陶瓷粉末或金屬粉末、有機黏合劑及有機溶劑者。塗膜82的厚度係無特別限定,例如是20~1000μm。 The sheet 80 is not particularly limited, and is, for example, a sheet made of a resin. In the present embodiment, a film made of a PET film is used. The sheet 80 is not particularly limited, and is, for example, 10 to 100 μm in thickness and 200 to 1000 mm in width. Moreover, the coating film 82 is applied to the upper surface of the sheet 80, and is used as a film for MLCC (Laminated Ceramic Capacitor), for example, after drying. The coating film 82 is, for example, a ceramic powder or a metal powder, an organic binder, and an organic solvent. The thickness of the coating film 82 is not particularly limited and is, for example, 20 to 1000 μm.

控制器90係作為以CPU為中心之微處理器所構 成。此控制器90係將控制信號輸出至供氣風扇21或排氣風扇26,控制從供氣口23所送風之流體的溫度及風量,或控制空間12a之環境氣體之來自排氣口28的排氣量。又,控制器90係輸入是熱電偶之溫度感測器49所檢測出之第2外管35的溫度、或將控制信號輸出至設置於連接第1冷媒供給源60與流體出入口48之配管的途中之開閉閥61及流量調整閥62,或個別地控制在紅外線加熱器30的冷媒流路39流動之冷媒的流量(參照第2圖)。一樣地,控制器90將控制信號輸出至設置於連接第2冷媒供給源65與流體出入口78之配管的途中之開閉閥66及流量調整閥67,或個別地控制在紅外線吸收板70的冷媒流路79流動之冷媒的流量。進而,控制器90向電力供給源50輸出用以調整從電力供給源50向燈絲31所供給之電力之大小的控制信號,而個別地調整紅外線加熱器30之燈絲溫度。又,控制器90係藉由控制輥17、輥18之轉速,可調整爐體12內之薄片80及塗膜82的通過時間或作用於薄片80及塗膜82的張力。 The controller 90 is constructed as a CPU-centric microprocessor. to make. The controller 90 outputs a control signal to the air supply fan 21 or the exhaust fan 26, controls the temperature and the air volume of the fluid supplied from the air supply port 23, or the row of the ambient gas of the control space 12a from the exhaust port 28. Gas volume. Further, the controller 90 inputs the temperature of the second outer tube 35 detected by the temperature sensor 49 of the thermocouple or outputs a control signal to the piping provided to the first refrigerant supply source 60 and the fluid inlet/outlet 48. The on-off valve 61 and the flow rate adjustment valve 62 in the middle or the flow rate of the refrigerant flowing through the refrigerant flow path 39 of the infrared heater 30 are individually controlled (refer to FIG. 2). In the same manner, the controller 90 outputs a control signal to the on-off valve 66 and the flow rate adjustment valve 67 provided in the middle of the pipe connecting the second refrigerant supply source 65 and the fluid inlet and outlet 78, or individually controls the refrigerant flow in the infrared absorption plate 70. The flow of refrigerant flowing on the road 79. Further, the controller 90 outputs a control signal for adjusting the magnitude of the power supplied from the power supply source 50 to the filament 31 to the power supply source 50, and individually adjusts the filament temperature of the infrared heater 30. Further, the controller 90 can adjust the passage time of the sheet 80 and the coating film 82 in the furnace body 12 or the tension acting on the sheet 80 and the coating film 82 by controlling the number of rotations of the roller 17 and the roller 18.

其次,說明使用依此方式所構成之乾燥爐10對塗膜82進行乾燥的狀況。首先,控制器90使輥17、輥18轉動,而開始搬運薄片80。藉此,從配置於乾燥爐10之左端的輥17逐漸鬆捲薄片80。又,薄片80係在即將從開口15被搬入爐體12內之前藉未圖示之塗佈器將塗膜82塗佈於上面。然後,已被塗佈塗膜82之薄片80被搬至爐體12內。在此時,控制器90控制供氣風扇21、排氣風扇26、電力供給源50、第1冷媒供給源60及第2冷媒供給源65。藉此,在薄片80通過爐體 12的空間12a內之間,形成於薄片80之上面的塗膜82係藉由被照射來自紅外線加熱器30的紅外線而被乾燥。又,與此同時,來自供氣裝置20之冷風冷卻塗膜82或薄片80,或除去從塗膜82所蒸發之溶劑。此外,控制器90將供氣風扇21之溫度或流量控制成薄片80的溫度成為PET薄膜之玻璃轉移點(約70℃)以下的既定值(例如60℃、50℃、45℃等)。亦可此溫度或流量係預先決定者。或者,亦可採用根據例如設置於薄片80上或爐體12內之溫度感測器所檢測出的溫度將溫度或流量控制成薄片80的溫度被保持於玻璃轉移點以下。依此方式,在薄片80的溫度仍然被保持於玻璃轉移點以下之狀態,塗膜82被乾燥而成為薄膜後,從開口16被搬出。接著,此薄膜(塗膜82)係與薄片80一起被捲繞於設置於爐體12之右端的輥18。然後,薄膜係從薄片80被剝離,被切斷成既定形狀後積層,而製造MLCC。 Next, a state in which the coating film 82 is dried using the drying furnace 10 configured as described above will be described. First, the controller 90 rotates the roller 17 and the roller 18 to start carrying the sheet 80. Thereby, the sheet 80 is gradually loosened from the roller 17 disposed at the left end of the drying furnace 10. Further, the sheet 80 is applied onto the upper surface of the coating film 82 by an applicator (not shown) just before being carried into the furnace body 12 from the opening 15. Then, the sheet 80 to which the coating film 82 has been applied is transferred into the furnace body 12. At this time, the controller 90 controls the air supply fan 21, the exhaust fan 26, the power supply source 50, the first refrigerant supply source 60, and the second refrigerant supply source 65. Thereby, the sheet 80 passes through the furnace body Between the spaces 12a of 12, the coating film 82 formed on the upper surface of the sheet 80 is dried by being irradiated with infrared rays from the infrared heater 30. At the same time, the cold air from the air supply device 20 cools the coating film 82 or the sheet 80, or removes the solvent evaporated from the coating film 82. Further, the controller 90 controls the temperature or flow rate of the air supply fan 21 so that the temperature of the sheet 80 becomes a predetermined value (for example, 60 ° C, 50 ° C, 45 ° C, or the like) of the glass transition point (about 70 ° C) of the PET film. This temperature or flow rate can also be determined in advance. Alternatively, the temperature or flow rate may be controlled to a temperature below the glass transition point by controlling the temperature or flow rate to a temperature of the sheet 80 based on, for example, the temperature detected by the temperature sensor disposed on the sheet 80 or within the furnace body 12. In this manner, the coating film 82 is dried and becomes a film in a state where the temperature of the sheet 80 is still maintained below the glass transition point, and is then carried out from the opening 16. Next, this film (coating film 82) is wound together with the sheet 80 on the roller 18 provided at the right end of the furnace body 12. Then, the film is peeled off from the sheet 80, cut into a predetermined shape, and laminated to produce MLCC.

在此,說明在對塗膜82進行乾燥時從紅外線加熱器30所放射之紅外線。第3圖係表示從紅外線加熱器30所放射之紅外線的波長特性之一例的說明圖。如上述所示,紅外線加熱器30係從燈絲31放射尖峰波長位於3.5μm附近的紅外線(第3圖之實線)。在此紅外線,包含波長2μm~4μm之紅外線或波長未滿2μm之紅外線。而且,紅外線加熱器30係因為具有藉上述之紅外線透過材料所形成的內管32、第1外管34及第2外管35,所以超過4μm之波長區域的紅外線係被這些管吸收(第3圖之區域A)。又,紅外線加熱器30係因為在燈絲31與塗膜82之間具有藉上述之選擇反射材料所形成的選擇反射層 37,所以波長未滿2μm之紅外線中在塗膜82方向(第1圖之下方向)所放射者被選擇反射層37所反射(第3圖之區域B)。被選擇反射層37所反射之紅外線係從選擇反射層37被放射至燈絲31側(第1圖之上方向),但是被紅外線吸收板70所吸收。藉此,從紅外線加熱器30到達塗膜82或薄片80之紅外線成為波長超過4μm之成分或波長未滿2μm之成分的比例小者。又,在從燈絲31在與塗膜82係相反方向(第1圖之上方向)所放射之電磁波中,波長2μm~4μm之紅外線係因為藉反射層36反射後向塗膜82側放射,所以從紅外線加熱器30到達塗膜82或薄片80之紅外線係波長2μm~4μm之成分的比例更高。 Here, the infrared rays emitted from the infrared heater 30 when the coating film 82 is dried will be described. Fig. 3 is an explanatory view showing an example of wavelength characteristics of infrared rays radiated from the infrared heater 30. As described above, the infrared heater 30 radiates infrared rays (solid line in Fig. 3) having a peak wavelength of about 3.5 μm from the filament 31. Here, the infrared rays include infrared rays having a wavelength of 2 μm to 4 μm or infrared rays having a wavelength of less than 2 μm. Further, since the infrared heater 30 has the inner tube 32, the first outer tube 34, and the second outer tube 35 formed by the infrared ray transmissive material described above, the infrared ray having a wavelength region exceeding 4 μm is absorbed by the tubes (third) Area A of the figure. Further, the infrared heater 30 is provided with a selective reflection layer formed by the above-mentioned selective reflection material between the filament 31 and the coating film 82. 37. Therefore, in the infrared rays having a wavelength of less than 2 μm, the radiation in the direction of the coating film 82 (the direction below the first drawing) is reflected by the selective reflection layer 37 (region B in Fig. 3). The infrared ray reflected by the selective reflection layer 37 is radiated from the selective reflection layer 37 to the filament 31 side (the direction above the first drawing), but is absorbed by the infrared absorbing plate 70. Thereby, the infrared rays which reach the coating film 82 or the sheet 80 from the infrared heater 30 become a component having a wavelength of more than 4 μm or a component having a wavelength of less than 2 μm. Further, in the electromagnetic wave radiated from the filament 31 in the direction opposite to the coating film 82 (the direction in the upper direction of the first drawing), the infrared ray having a wavelength of 2 μm to 4 μm is reflected by the reflective layer 36 and then emitted toward the coating film 82 side. The ratio of the components of the infrared ray heater 30 reaching the coating film 82 or the sheet 80 having an infrared ray wavelength of 2 μm to 4 μm is higher.

在此,弄清楚本實施形態之構成元件與本發明之構成元件的對應關係。本實施形態之爐體12相當於本發明的爐體,燈絲31相當於發熱體,紅外線加熱器30相當於紅外線加熱器,選擇反射層37相當於選擇反射體,紅外線吸收板70相當於紅外線吸收體。又,第2外管35相當於管狀構件及第2管,第1外管34相當於第1管,冷媒流路79相當於冷媒流路。塗膜82相當於乾燥對象。 Here, the correspondence between the constituent elements of the present embodiment and the constituent elements of the present invention will be clarified. The furnace body 12 of the present embodiment corresponds to the furnace body of the present invention, the filament 31 corresponds to a heating element, the infrared heater 30 corresponds to an infrared heater, the selective reflection layer 37 corresponds to a selective reflector, and the infrared absorption plate 70 corresponds to infrared absorption. body. Further, the second outer tube 35 corresponds to the tubular member and the second tube, the first outer tube 34 corresponds to the first tube, and the refrigerant flow path 79 corresponds to the refrigerant flow path. The coating film 82 corresponds to a drying target.

以上所說明之本實施形態的乾燥爐10包括:選擇反射層37,係在爐體12內配置成位於燈絲31與塗膜82之間,並反射波長未滿2μm之紅外線的至少一部分且使波長2μm~4μm之紅外線的至少一部分透過;及紅外線吸收板70,係在爐體12內配置於從燈絲31觀察時與選擇反射層37係相反側,並可吸收波長未滿2μm之紅外線的至少一部分。因此,可抑制波長未滿2μm之紅外線從燈絲31成直線地到達塗膜82 側。而且,藉由具有紅外線吸收板70,亦可抑制被選擇反射層37反射後的紅外線在爐體12等再被反射而到達塗膜82側。藉此,可更抑制塗膜82之過熱。又,波長未滿2μm之紅外線到達塗膜82側時,因為例如塗膜82或薄片80變成過熱,而薄片80發生變形,所以有對塗膜82有不良影響的情況。在本實施形態之乾燥爐10,亦可更抑制這種來自紅外線加熱器30之波長未滿2μm的紅外線所造成之對塗膜82的影響。又,薄片80或塗膜82變成過熱時,例如為了將塗膜82保持於既定溫度以下或將薄片80保持於玻璃轉移點以下所需之來自供氣風扇21之冷風的量增大,這亦可抑制。藉此,可更降低乾燥時之消耗能量。此外,在乾燥爐10,關於從紅外線加熱器30所放射之波長2μm~4μm的紅外線,因為透過選擇反射層37後可到達塗膜82側,所以可藉該紅外線對塗膜82進行乾燥。 The drying furnace 10 of the present embodiment described above includes a selective reflection layer 37 which is disposed between the filament 31 and the coating film 82 in the furnace body 12 and reflects at least a part of the infrared rays having a wavelength of less than 2 μm and has a wavelength At least a part of the infrared rays of 2 μm to 4 μm are transmitted; and the infrared ray absorbing plate 70 is disposed in the furnace body 12 at a side opposite to the selective reflection layer 37 when viewed from the filament 31, and can absorb at least a part of infrared rays having a wavelength of less than 2 μm. . Therefore, infrared rays having a wavelength of less than 2 μm can be suppressed from reaching the coating film 82 in a straight line from the filament 31. side. Further, by having the infrared ray absorbing plate 70, the infrared ray reflected by the selective reflection layer 37 can be prevented from being reflected by the furnace body 12 or the like and reaching the coating film 82 side. Thereby, overheating of the coating film 82 can be further suppressed. In addition, when the infrared ray having a wavelength of less than 2 μm reaches the side of the coating film 82, for example, the coating film 82 or the sheet 80 is overheated, and the sheet 80 is deformed, which may adversely affect the coating film 82. In the drying furnace 10 of the present embodiment, the influence of the infrared rays from the infrared heater 30 having a wavelength of less than 2 μm on the coating film 82 can be further suppressed. Further, when the sheet 80 or the coating film 82 is overheated, for example, the amount of cold air from the air supply fan 21 required to maintain the coating film 82 at a predetermined temperature or lower or to hold the sheet 80 below the glass transition point is increased. Can be suppressed. Thereby, the energy consumption during drying can be further reduced. Further, in the drying furnace 10, the infrared rays having a wavelength of 2 μm to 4 μm radiated from the infrared heater 30 can pass through the selective reflection layer 37 to reach the side of the coating film 82, so that the coating film 82 can be dried by the infrared rays.

又,紅外線加熱器30具有使波長2μm~4μm之紅外線的至少一部分透過並包圍燈絲31的第2外管35,第2外管35係在內周面與外周面之至少一方中,在包含從燈絲31觀察時與紅外線吸收板70係相反側之區域具有選擇反射層37。因此,不將選擇反射層37作為與紅外線加熱器30係不同的構件配置於爐體12內,而可更抑制來自紅外線加熱器30之波長未滿2μm的紅外線所造成之對塗膜82的影響。 Further, the infrared heater 30 has a second outer tube 35 that transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm and surrounds the filament 31, and the second outer tube 35 is included in at least one of the inner peripheral surface and the outer peripheral surface. The region opposite to the infrared ray absorbing plate 70 when the filament 31 is viewed has a selective reflection layer 37. Therefore, the selective reflection layer 37 is not disposed in the furnace body 12 as a member different from the infrared heater 30, and the influence of the infrared rays from the infrared heater 30 having a wavelength of less than 2 μm on the coating film 82 can be further suppressed. .

進而,紅外線加熱器30具有:第1外管34,係使波長2μm~4μm之紅外線的至少一部分透過並包圍燈絲31;及第2外管35,係包圍燈絲31及第1外管34;第1外管34係在內周面與外周面之至少一方中,在包含從燈絲31觀察時與 塗膜82係相反側的區域具有反射波長2μm~4μm之紅外線的至少一部分的反射層36。因此,可反射從燈絲31在與塗膜82係相反方向所放射之電磁波中波長2μm~4μm之紅外線。藉此,可將此波長之紅外線高效率地照射於塗膜82,而可提高乾燥效率。 Further, the infrared heater 30 has a first outer tube 34 that transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm and surrounds the filament 31, and a second outer tube 35 that surrounds the filament 31 and the first outer tube 34; The outer tube 34 is at least one of the inner circumferential surface and the outer circumferential surface, and when viewed from the filament 31, The region on the opposite side of the coating film 82 has a reflection layer 36 that reflects at least a part of infrared rays having a wavelength of 2 μm to 4 μm. Therefore, infrared rays having a wavelength of 2 μm to 4 μm from the electromagnetic wave radiated from the filament 31 in the opposite direction to the coating film 82 can be reflected. Thereby, the infrared rays of this wavelength can be efficiently irradiated onto the coating film 82, and the drying efficiency can be improved.

進而,紅外線吸收板70係在內部具有冷媒可流通的冷媒流路79。因此,可藉冷媒冷卻紅外線吸收板70,而可更抑制紅外線吸收板70因吸收紅外線而變成過熱。藉此,可更抑制紅外線吸收板70之過熱對塗膜82的不良影響。 Further, the infrared ray absorbing plate 70 has a refrigerant flow path 79 through which the refrigerant can flow. Therefore, the infrared ray absorbing plate 70 can be cooled by the refrigerant, and the infrared ray absorbing plate 70 can be further suppressed from being overheated by absorbing infrared rays. Thereby, the adverse effect of the overheating of the infrared absorbing plate 70 on the coating film 82 can be further suppressed.

此外,本發明係毫不限定為上述之實施形態,當然只要屬於本發明之技術性範圍,可藉各種形態實施。 The present invention is not limited to the above-described embodiments, and of course, it can be implemented in various forms as long as it falls within the technical scope of the present invention.

例如,在上述之實施形態,將選擇反射層37形成於紅外線加熱器30的第2外管35,但是未限定如此,只要在爐體12內將選擇反射層37配置成位於燈絲31與塗膜82之間即可。第4圖係變形例之乾燥爐110的縱向剖面圖。乾燥裝置110係除了在紅外線加熱器130與紅外線加熱器30相異而不包括選擇反射層37、包括間壁185及選擇反射層137、包括替代紅外線吸收板70之紅外線吸收層170以外,與乾燥爐10的構成相同。因此,對乾燥爐110的構成元件中與乾燥爐10相同的構成元件,附加與乾燥爐10相同的符號,而省略其說明。間壁185係如第4圖所示,設置於爐體12內部,並水平地隔開爐體12的空間12a中設置於紅外線加熱器30的空間與配置(搬運)塗膜82之空間的構件。此間壁185係使波長2μm~4μm之紅外線的至少一部分透過,由與例如內管32等相同之石英 玻璃等上述之紅外線透過材料所形成。在此間壁85中紅外線加熱器30側的表面(第4圖之上面)形成選擇反射層137。此選擇反射層137係藉與上述之選擇反射層37相同的選擇反射材料所形成。紅外線吸收層170配置於爐體12的內周面中從燈絲31觀察時與選擇反射層137係相反側(第4圖之上側)的面。此紅外線吸收層170係將例如黑體塗料等之可吸收波長未滿2μm之紅外線的至少一部分之材料塗佈於爐體12的內周面並進行乾燥所形成。在此乾燥爐110,亦與上述之實施形態一樣,可藉選擇反射層137抑制波長未滿2μm之紅外線從燈絲31到達塗膜82側。又,藉紅外線吸收層170,亦可抑制藉選擇反射層137反射後的紅外線在爐體12等進一步被反射。而且,因為藉間壁185隔開配置紅外線加熱器30的空間與配置塗膜82的空間,所以即使在配置紅外線加熱器30的空間或該空間內的物體、面向該空間之爐體12等因波長未滿2μm之紅外線而變成過熱的情況,塗膜82或薄片80亦難變成過熱。因此,可更抑制來自紅外線加熱器30之波長未滿2μm的紅外線所造成之對塗膜82的影響。又,因為紅外線吸收層170係形成於爐體12的內周面,所以不將如紅外線吸收板70之獨立的構件配置於爐體12內,可藉紅外線吸收體吸收藉選擇反射層137所反射的紅外線。此外,紅外線吸收層170係與紅外線吸收板70相異,未具有冷媒流路,但是未必需要冷卻紅外線吸收層170。這是由於藉間壁185隔開空間,即使紅外線吸收層170本身變成過熱,對塗膜82側之空間的影響亦小。在第4圖之乾燥爐110,亦可紅外線加熱器130與紅外線加熱器30一樣地包括選 擇反射層37,亦可將紅外線吸收板70配置於爐體12內。 For example, in the above embodiment, the selective reflection layer 37 is formed on the second outer tube 35 of the infrared heater 30. However, the present invention is not limited thereto, and the selective reflection layer 37 is disposed in the furnace body 12 so as to be located between the filament 31 and the coating film. 82 between. Fig. 4 is a longitudinal sectional view of a drying furnace 110 according to a modification. The drying device 110 is different from the infrared heater 130 and the infrared heater 30 except that the selective reflection layer 37, the partition wall 185 and the selective reflection layer 137, and the infrared absorption layer 170 including the infrared absorption panel 70 are replaced, and dried. The configuration of the furnace 10 is the same. Therefore, the same constituent elements as those of the drying furnace 10 among the constituent elements of the drying furnace 110 are denoted by the same reference numerals as those of the drying furnace 10, and the description thereof will be omitted. As shown in FIG. 4, the partition 185 is provided inside the furnace body 12, and horizontally partitions the space provided in the space of the infrared heater 30 and the space in which the coating film 82 is disposed in the space 12a of the furnace body 12. . The partition wall 185 transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm, and is made of the same quartz as, for example, the inner tube 32. The above-mentioned infrared ray transmissive material such as glass is formed. A selective reflection layer 137 is formed on the surface (the upper surface of Fig. 4) of the partition wall 85 on the side of the infrared heater 30. The selective reflection layer 137 is formed by the same selective reflection material as the selective reflection layer 37 described above. The infrared ray absorbing layer 170 is disposed on a surface of the inner circumferential surface of the furnace body 12 opposite to the selective reflection layer 137 (the upper side in FIG. 4) when viewed from the filament 31. The infrared ray absorbing layer 170 is formed by applying, for example, a material such as a black body paint that absorbs at least a part of infrared rays having a wavelength of less than 2 μm to the inner peripheral surface of the furnace body 12 and drying it. In the drying furnace 110, as in the above-described embodiment, the infrared ray having a wavelength of less than 2 μm can be prevented from reaching the side of the coating film 82 from the filament 31 by the selective reflection layer 137. Further, the infrared ray absorbing layer 170 can suppress the infrared rays reflected by the selective reflection layer 137 from being further reflected in the furnace body 12 or the like. Further, since the intervening wall 185 separates the space in which the infrared heater 30 is disposed and the space in which the coating film 82 is disposed, even the space in which the infrared heater 30 is disposed, the object in the space, the furnace body 12 facing the space, and the like When the wavelength is less than 2 μm of infrared rays and becomes superheated, it is difficult for the coating film 82 or the sheet 80 to become overheated. Therefore, the influence on the coating film 82 caused by the infrared rays having a wavelength of less than 2 μm from the infrared heater 30 can be more suppressed. Further, since the infrared ray absorbing layer 170 is formed on the inner peripheral surface of the furnace body 12, the independent member such as the infrared absorbing plate 70 is not disposed in the furnace body 12, and can be absorbed by the infrared absorbing body by the selective reflection layer 137. Infrared. Further, the infrared absorbing layer 170 is different from the infrared absorbing plate 70 and does not have a refrigerant flow path, but it is not always necessary to cool the infrared absorbing layer 170. This is because the space is separated by the borrowing wall 185, and even if the infrared absorbing layer 170 itself becomes overheated, the influence on the space on the side of the coating film 82 is small. In the drying furnace 110 of FIG. 4, the infrared heater 130 may also include the same as the infrared heater 30. The infrared absorbing plate 70 may be disposed in the furnace body 12 by the reflection layer 37.

在上述之實施形態,選擇反射層37係採用形成於第2外管35之外周面者,但是亦可形成於內周面。又,選擇反射層37係採用將選擇反射材料直接成膜於第2外管35的表面者,但是未限定如此。例如,亦可準備將選擇反射材料成膜於作為基體之樹脂薄膜上所製造的選擇反射薄膜,再將其與第2外管35的表面接合。在此情況,選擇反射薄膜之基體係採用使波長2μm~4μm之紅外線的至少一部分透過者較佳。在上述之第3圖的乾燥爐110,亦可一樣地使用選擇反射薄膜,替代選擇反射層137。或者,亦可替代選擇反射層37、137,將由選擇反射材料所構成之獨立的構件在爐體12內配置成位於燈絲31與塗膜82之間。 In the above embodiment, the selective reflection layer 37 is formed on the outer circumferential surface of the second outer tube 35, but may be formed on the inner circumferential surface. Further, the selective reflection layer 37 is formed by directly forming a selective reflection material on the surface of the second outer tube 35, but the invention is not limited thereto. For example, a selective reflection film produced by forming a selective reflection material on a resin film as a substrate may be prepared, and then bonded to the surface of the second outer tube 35. In this case, it is preferred that the base system for selecting the reflective film is such that at least a portion of the infrared rays having a wavelength of 2 μm to 4 μm are transmitted. In the drying oven 110 of Fig. 3 described above, a selective reflection film may be used in the same manner as the selective reflection layer 137. Alternatively, instead of selectively selecting the reflective layers 37, 137, a separate member composed of the selective reflective material may be disposed between the filament 31 and the coating film 82 in the furnace body 12.

在上述之實施形態,反射層36係採用形成於第1外管34之外周面者,但是亦可形成於內周面。又,亦可採用不包括反射層36者。 In the above embodiment, the reflective layer 36 is formed on the outer peripheral surface of the first outer tube 34, but may be formed on the inner peripheral surface. Also, those that do not include the reflective layer 36 may be employed.

在上述之實施形態,紅外線吸收板70係採用對每一個紅外線加熱器30配置一個,但是未限定如此。例如,亦可將一個紅外線吸收板70配置成覆蓋複數個紅外線加熱器30中與選擇反射層37係相反側。又,亦可在乾燥爐10包括替代紅外線吸收板70之乾燥爐110的紅外線吸收層170。 In the above embodiment, the infrared ray absorbing plate 70 is disposed for each of the infrared heaters 30, but the invention is not limited thereto. For example, an infrared ray absorbing plate 70 may be disposed to cover the opposite side of the plurality of infrared heaters 30 from the selective reflection layer 37. Further, the drying furnace 10 may include an infrared absorbing layer 170 instead of the drying furnace 110 of the infrared absorbing plate 70.

在上述之實施形態,內管32、第1外管34及第2外管35係採用藉吸收波長超過4μm之紅外線且使4μm以下之紅外線透過的石英玻璃所形成者,但是只要使波長2μm~4μm之紅外線的至少一部分透過者即可。例如,亦可內管32、第1 外管34及第2外管35的任一個以上採用吸收波長超過3.5μm之紅外線且使波長3.5μm以下之紅外線透過者。一樣地,選擇反射層37係採用使波長2μm~4μm之紅外線的至少一部分透過者,但是亦可採用使波長2μm~3.5μm之紅外線的至少一部分透過者。波長3.5μm以下之紅外線係因為在切斷水或溶劑等之分子中的氫鍵的性能優異,所以藉由內管32、第1外管34、第2外管35及選擇反射層37使該紅外線透過,而可更高效率地對塗膜82進行乾燥。 In the above-described embodiment, the inner tube 32, the first outer tube 34, and the second outer tube 35 are formed of quartz glass that absorbs infrared rays having a wavelength of more than 4 μm and transmits infrared rays of 4 μm or less. However, the wavelength is 2 μm. At least a part of the infrared rays of 4 μm can be transmitted. For example, the inner tube 32, the first tube Any one or more of the outer tube 34 and the second outer tube 35 are made of infrared rays having an absorption wavelength of more than 3.5 μm and infrared rays having a wavelength of 3.5 μm or less. Similarly, the selective reflection layer 37 is formed by transmitting at least a part of infrared rays having a wavelength of 2 μm to 4 μm, but at least a part of infrared rays having a wavelength of 2 μm to 3.5 μm may be used. The infrared ray having a wavelength of 3.5 μm or less is excellent in the performance of hydrogen bonding in molecules such as water or solvent, so the inner tube 32, the first outer tube 34, the second outer tube 35, and the selective reflection layer 37 are used. The infrared rays are transmitted, and the coating film 82 can be dried more efficiently.

在上述之實施形態,燈絲31係採用放射尖峰波長3.5μm附近之電磁波者,但是未限定為尖峰波長位於2μm~4μm之區域的情況,亦可尖峰波長位於未滿2μm或超過4μm之區域。在此情況,亦對波長未滿2μm之紅外線或波長超過4μm之紅外線,藉內管32、第1外管34、第2外管35及選擇反射層37,抑制往塗膜82之到達。即,即使在燈絲31所放射之電磁波的尖峰波長不位於2μm~4μm之區域的情況,亦可藉內管32、第1外管34、第2外管35及選擇反射層37,,使到達塗膜82之電磁波的尖峰波長變成2μm~4μm。但,為了乾燥效率更提高,燈絲31所放射之電磁波的尖峰波長位於2μm~4μm之區域較佳。 In the above-described embodiment, the filament 31 is an electromagnetic wave having a radiation peak wavelength of about 3.5 μm. However, the filament 31 is not limited to a region where the peak wavelength is in the range of 2 μm to 4 μm, and the peak wavelength may be in a region of less than 2 μm or more than 4 μm. In this case, the infrared rays having a wavelength of less than 2 μm or the infrared rays having a wavelength of more than 4 μm are prevented from reaching the coating film 82 by the inner tube 32, the first outer tube 34, the second outer tube 35, and the selective reflection layer 37. In other words, even when the peak wavelength of the electromagnetic wave radiated from the filament 31 is not in the region of 2 μm to 4 μm, the inner tube 32, the first outer tube 34, the second outer tube 35, and the selective reflection layer 37 can be used to reach The peak wavelength of the electromagnetic wave of the coating film 82 becomes 2 μm to 4 μm. However, in order to improve the drying efficiency, it is preferable that the peak wavelength of the electromagnetic wave radiated from the filament 31 is in the range of 2 μm to 4 μm.

在上述之實施形態,塗膜82係用作MLCC用之薄膜,但是未限定如此。例如亦可用作LTCC(低溫烘烤陶瓷)或其他的綠片用之薄膜。或者,亦可塗膜82用作鋰離子二次電池等之成為電池用之電極的塗膜。在此情況,塗膜82係亦可採用將由電極材料(正極活性物質或負極活性物質)、黏合劑、 導電材料及溶劑所一起捏揉的電極材料膏塗佈於薄片80上者。在塗膜82係成為電池用之電極的塗膜的情況,薄片80係亦可採用鋁或銅等之金屬片。又,亦可因應於塗膜82或薄片80之材質,適當地變更來自供氣風扇21之送風的溫度,亦可採用在例如40~400℃之範圍送風者。 In the above embodiment, the coating film 82 is used as a film for MLCC, but the invention is not limited thereto. For example, it can also be used as a film for LTCC (Low Temperature Baking Ceramic) or other green sheets. Alternatively, the coating film 82 may be used as a coating film for a battery electrode such as a lithium ion secondary battery. In this case, the coating film 82 may also be made of an electrode material (positive electrode active material or negative electrode active material), a binder, An electrode material paste which is kneaded together with a conductive material and a solvent is applied to the sheet 80. In the case where the coating film 82 is a coating film for an electrode for a battery, the sheet 80 may be a metal sheet such as aluminum or copper. Further, depending on the material of the coating film 82 or the sheet 80, the temperature of the air blown from the air supply fan 21 may be appropriately changed, and the air blower may be used, for example, in the range of 40 to 400 °C.

本專利申請係將於2013年4月11日所申請之日本專利申請第2013-083032號作為優先權主張的基礎,藉引用而其內容之全部包含於本專利說明書。 The present patent application is based on Japanese Patent Application No. 2013-083032, filed on Jan.

【工業上的可應用性】 [Industrial Applicability]

本發明係可利用於需要塗膜等之乾燥對象之乾燥的工業,例如製造MLCC或LTCC等之陶瓷工業、製造鋰離子二次電池之電極塗膜的電池工業等。 The present invention can be utilized in industries in which drying of a drying target such as a coating film is required, for example, a ceramic industry for producing MLCC or LTCC, a battery industry for producing an electrode coating film for a lithium ion secondary battery, and the like.

10‧‧‧乾燥爐 10‧‧‧ drying oven

12‧‧‧爐體 12‧‧‧ furnace body

12a‧‧‧空間 12a‧‧‧ Space

13‧‧‧前端面 13‧‧‧ front end

14‧‧‧後端面 14‧‧‧ rear end face

15‧‧‧開口 15‧‧‧ openings

16‧‧‧開口 16‧‧‧ openings

17‧‧‧輥 17‧‧‧ Roll

18‧‧‧輥 18‧‧‧ Roll

19‧‧‧搬運通路 19‧‧‧Transportation

20‧‧‧供氣裝置 20‧‧‧ gas supply

21‧‧‧供氣風扇 21‧‧‧Air supply fan

22‧‧‧管構造體 22‧‧‧ tube structure

23‧‧‧供氣口 23‧‧‧ gas supply port

25‧‧‧排氣裝置 25‧‧‧Exhaust device

26‧‧‧排氣風扇 26‧‧‧Exhaust fan

27‧‧‧管構造體 27‧‧‧ tube structure

28‧‧‧排氣口 28‧‧‧Exhaust port

30‧‧‧紅外線加熱器 30‧‧‧Infrared heater

31‧‧‧燈絲 31‧‧‧ filament

32‧‧‧內管 32‧‧‧Inside

33‧‧‧加熱器本體 33‧‧‧ heater body

34‧‧‧第1外管 34‧‧‧1st outer tube

35‧‧‧第2外管 35‧‧‧2nd outer tube

36‧‧‧反射層 36‧‧‧reflective layer

37‧‧‧選擇反射層 37‧‧‧Selecting the reflective layer

39‧‧‧冷媒流路 39‧‧‧Refrigerant flow path

70‧‧‧紅外線吸收板 70‧‧‧Infrared absorption board

79‧‧‧冷媒流路 79‧‧‧Refrigerant flow path

80‧‧‧薄片 80‧‧‧Sheet

82‧‧‧塗膜 82‧‧·coating film

90‧‧‧控制器 90‧‧‧ Controller

Claims (6)

一種乾燥爐,包括:爐體,係用以進行乾燥對象之乾燥;紅外線加熱器,係配置於該爐體內,並具有放射包含紅外線之電磁波的發熱體;選擇反射體,係在該爐體內配置成位於該發熱體與該乾燥對象之間,反射波長未滿2μm之紅外線的至少一部分,而且使波長2μm~4μm之紅外線的至少一部分透過;及紅外線吸收體,係在該爐體內配置於從該發熱體觀察時與該選擇反射體係相反側,並可吸收波長未滿2μm之紅外線的至少一部分。 A drying furnace comprising: a furnace body for drying a drying object; an infrared heater disposed in the furnace body and having a heating element for emitting electromagnetic waves containing infrared rays; and selecting a reflector body disposed in the furnace body Between the heating element and the object to be dried, at least a part of infrared rays having a wavelength of less than 2 μm are reflected, and at least a part of infrared rays having a wavelength of 2 μm to 4 μm are transmitted; and an infrared absorber is disposed in the furnace body. When the heating element is observed, it is opposite to the selective reflection system, and at least a part of infrared rays having a wavelength of less than 2 μm can be absorbed. 如申請專利範圍第1項之乾燥爐,其中該紅外線加熱器係具有使波長2μm~4μm之紅外線的至少一部分透過並包圍該發熱體的管狀構件;該管狀構件係在內周面與外周面之至少一方中,在包含從該發熱體觀察時與該紅外線吸收體係相反側之區域具有該選擇反射體。 The drying furnace according to claim 1, wherein the infrared heater has a tubular member that transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm and surrounds the heat generating body; the tubular member is inner circumferential surface and outer circumferential surface At least one of the selected reflectors is provided in a region on the side opposite to the infrared absorbing system when viewed from the heat generating body. 如申請專利範圍第2項之乾燥爐,其中該紅外線加熱器係具有:第1管,係使波長2μm~4μm之紅外線的至少一部分透過並包圍該發熱體;及第2管,係包圍該發熱體及該第1管之該管狀構件;該第1管係在內周面與外周面之至少一方中,在包含從該發熱體觀察時與該乾燥對象係相反側之區域具有反射波長2μm~4μm之紅外線的至少一部分的反射層。 The drying furnace according to claim 2, wherein the infrared heater has a first tube that transmits at least a part of infrared rays having a wavelength of 2 μm to 4 μm and surrounds the heating element; and the second tube surrounds the heat generation And a tubular member of the first tube; the first tube has at least one of an inner circumferential surface and an outer circumferential surface having a reflection wavelength of 2 μm in a region on the opposite side of the drying target when viewed from the heating element. A reflective layer of at least a portion of the infrared rays of 4 μm. 如申請專利範圍第1至3項中任一項之乾燥爐,其中包括間壁,該間壁係在該爐體內隔開配置該紅外線加熱器的空間與配置該乾燥對象的空間,並使波長2μm~4μm之紅外線的至少一部分透過;該間壁係具有該選擇反射體。 The drying furnace according to any one of claims 1 to 3, further comprising a partition wall in which a space in which the infrared heater is disposed and a space in which the drying object is disposed are arranged and the wavelength is At least a portion of the infrared rays of 2 μm to 4 μm are transmitted; the partition wall has the selective reflector. 如申請專利範圍第4項之乾燥爐,其中該爐體係在內周面具有該紅外線吸收體。 A drying oven according to the fourth aspect of the invention, wherein the furnace system has the infrared absorber on an inner circumferential surface. 如申請專利範圍第1至3項中任一項之乾燥爐,其中該紅外線吸收體係在內部具有冷媒可流通之冷媒流路。 The drying furnace according to any one of claims 1 to 3, wherein the infrared absorbing system has a refrigerant flow path through which a refrigerant can flow.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108885056A (en) * 2016-03-28 2018-11-23 日本碍子株式会社 Low temperature drying device
CN113544452A (en) * 2020-02-17 2021-10-22 日本碍子株式会社 Heat treatment furnace
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US10739069B2 (en) 2016-03-28 2020-08-11 Ngk Insulators, Ltd. Low-temperature drying apparatus
CN113544452A (en) * 2020-02-17 2021-10-22 日本碍子株式会社 Heat treatment furnace
TWI771016B (en) * 2021-03-11 2022-07-11 南韓商光洋熱系統韓國股份有限公司 Heater unit of heat treatment oven

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