TW201507014A - Cutting device - Google Patents
Cutting device Download PDFInfo
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- TW201507014A TW201507014A TW103114973A TW103114973A TW201507014A TW 201507014 A TW201507014 A TW 201507014A TW 103114973 A TW103114973 A TW 103114973A TW 103114973 A TW103114973 A TW 103114973A TW 201507014 A TW201507014 A TW 201507014A
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- wafer
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- chuck table
- workpiece
- wafer cassette
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
- H01L21/6779—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks the workpieces being stored in a carrier, involving loading and unloading
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明是有關於一種切削裝置。 The invention relates to a cutting device.
在半導體元件製造步驟以及各種電子零件的製造步驟中，將稱為切割鋸(dicing saw)之極薄的切削刀高速旋轉以將工件分割成一個個製品與晶片的切削裝置是不可或缺的。在這種切削裝置中，是將由黏合材料以及富含於黏合材料中之微小研磨粒(金鋼石以及SiC等)所構成之刀鋒厚度20~300μm的切削刀高速旋轉，以用微米等級(micron level)將工件(半導體晶圓以及玻璃、CSP與BGA等樹脂基板、陶瓷等)的分割預定線粉碎去除，使其分割成一個個製品或晶片。 In the semiconductor element manufacturing step and the manufacturing steps of various electronic parts, it is indispensable to rotate a very thin cutting blade called a dicing saw at a high speed to divide the workpiece into individual products and wafer cutting devices. In this cutting device, a cutter having a blade thickness of 20 to 300 μm composed of a bonding material and a minute abrasive grain (such as diamond and SiC) rich in a binder is rotated at a high speed to use a micron rating (micron). Level) The predetermined dividing line of the workpiece (semiconductor wafer and glass, resin substrate such as CSP and BGA, ceramics, etc.) is pulverized and removed, and is divided into individual products or wafers.
工件之中，也有加工後的元件晶片即使在處理上比較粗暴也不致產生問題者。例如，CSP與BGA等之樹脂基板或陶瓷基板等就能適用於此。作為加工CSP與BGA等樹脂基板或陶瓷基板等的切削裝置，也有直接將基板固定在夾頭台上，分割後直接搬送晶片，洗淨後存放在盒體等中的無膠帶式(tapeless)切削裝置(參照例如，專利文獻1)。 此時，因為通常使用的切割膠帶變得不需要，所以可減少耗材、減少黏貼工時、降低成本。 Among the workpieces, there are also processed component wafers that do not cause problems even if they are rough in processing. For example, a resin substrate such as CSP or BGA, a ceramic substrate, or the like can be applied to this. As a cutting device for processing a resin substrate such as a CSP or a BGA or a ceramic substrate, there is also a tapeless cutting in which the substrate is directly fixed to the chuck table, the wafer is directly transferred after being divided, and the substrate is washed and stored in a case or the like. Device (refer to, for example, Patent Document 1). At this time, since the commonly used dicing tape becomes unnecessary, the consumables can be reduced, the sticking time can be reduced, and the cost can be reduced.
專利文獻1：日本專利第4388640號公報 Patent Document 1: Japanese Patent No. 4388640
然而，在專利文獻1中所示之切削裝置，用於從夾頭台搬送已分割之晶片的搬送機構的構造會變複雜，且會對晶片之搬送機構要求確實的吸引固定。因此，除了切削裝置本身會變得較昂貴外，裝置本身也會變得大型化。 However, in the cutting device shown in Patent Document 1, the structure of the conveying mechanism for conveying the divided wafer from the chuck table is complicated, and the wafer transfer mechanism is required to be reliably attracted and fixed. Therefore, in addition to the fact that the cutting device itself becomes more expensive, the device itself becomes larger.
本發明即是有鑒於上述問題而作成者，其目的在於提供一種可以謀求裝置本身之低成本化並可以抑制大型化之切削裝置。 The present invention has been made in view of the above problems, and it is an object of the invention to provide a cutting device which can reduce the cost of the device itself and can suppress an increase in size.
為了解決上述課題並達成目的，本發明之切削裝置是一種將板狀的工件分割成複數個晶片並收納於晶片盒中的切削裝置，其特徵在於，包含，將該工件以保持面吸引保持之夾頭台、將夾頭台所保持之該工件以切削刀分割加工的加工機構、在將該工件搬出搬入之搬出入區域與分割加工該工件之加工區域間使該夾頭台在X軸方向上加工傳送之加工傳送機構、使該加工機構在與該X軸方向直交之Y軸方向上進行分度傳送之分度傳送機構，以及對被分割成 複數個之該夾頭台上的該晶片噴射流體，以使該晶片從該夾頭台往包夾該搬出入區域而與該加工區域被定位在相反側的晶片盒移動之晶片移動機構，該晶片移動機構具有晶片吹送噴嘴，配置在該搬出入區域與該加工區域的分界處附近，並會朝向將來自該保持面之吸引停止而在該搬出入區域與該加工區域之間移動的該夾頭台之該保持面上的該晶片，從上方往該晶片盒噴射該流體，以將晶片從該夾頭台吹送向該晶片盒，且該晶片盒鄰接於該加工傳送機構之端部而配置成可裝卸，並在比該夾頭台之該保持面還低的位置形成開口。 In order to solve the above problems and achieve the object, a cutting apparatus according to the present invention is a cutting apparatus that divides a plate-shaped workpiece into a plurality of wafers and stores them in a wafer cassette, and is characterized in that the workpiece is sucked and held by a holding surface. a chucking table, a machining mechanism for dividing the workpiece held by the chuck table by a cutter, a loading and unloading region for loading and unloading the workpiece, and a machining region for dividing the workpiece, and the chuck table is disposed in the X-axis direction a machining transport mechanism for processing and transporting, an indexing transport mechanism for indexing the processing mechanism in a Y-axis direction orthogonal to the X-axis direction, and the pair being divided into The plurality of wafers on the chuck stage eject fluid to cause the wafer to move from the chuck table to a wafer moving mechanism that moves the wafer cassette to the loading and unloading area and the processing area is positioned on the opposite side of the wafer cassette. The wafer moving mechanism has a wafer blowing nozzle disposed in the vicinity of a boundary between the loading/unloading area and the processing area, and moves toward the folder between the loading and unloading area and the processing area in order to stop suction from the holding surface. The wafer on the holding surface of the headstock ejects the fluid from above to the wafer cassette to blow the wafer from the chuck table to the wafer cassette, and the wafer cassette is disposed adjacent to an end of the processing transport mechanism It is detachable and forms an opening at a position lower than the holding surface of the chuck table.
又，前述切削裝置還設有與前述夾頭台一體被加工傳送，且自該夾頭台朝向前述晶片盒從比該夾頭台之前述保持面還低的位置延伸出去以遮擋前述加工傳送機構的引導盤，並將該引導盤之前端設定在比前述晶片盒的前述開口還高的位置上，且至少在從前述搬出入區域向前述加工區域移動之該夾頭台通過前述晶片吹送噴嘴的下方之前，宜使該引導盤之前端和該晶片盒之開口相互重疊。 Further, the cutting device is further provided to be integrally processed and conveyed from the chuck table, and extends from the chuck table toward the wafer cassette from a position lower than the holding surface of the chuck table to block the processing conveyance mechanism. a guide disk, and the front end of the guide disk is set at a position higher than the opening of the wafer cassette, and at least the chuck stage moving from the loading and unloading area to the processing area passes through the wafer blowing nozzle Before the lower side, it is preferable to overlap the front end of the guide disc and the opening of the wafer cassette.
又，前述切削裝置宜使前述晶片盒之前述開口具有使鄰接前述加工傳送機構之端部以遮蓋前述加工傳送機構的方式朝向前述夾頭台突伸的突伸部。 Further, in the cutting device, it is preferable that the opening of the wafer cassette has a projection that protrudes toward the chuck base so that an end portion adjacent to the processing conveyance mechanism covers the processing conveyance mechanism.
因此，本發明之切削裝置中，藉由在未配備所謂手動式搬送機構的切削裝置中追加設置晶片吹送噴嘴與晶片盒，而可用便宜且節省空間的方式，實現無膠帶式的切 削裝置。藉此，可以謀求用於從夾頭台搬送已分割之晶片的搬送機構的構造的簡易化，也可以謀求裝置本身的低成本化並可抑制大型化。 Therefore, in the cutting apparatus of the present invention, by additionally providing the wafer blowing nozzle and the wafer cassette in the cutting apparatus not equipped with the so-called manual conveying mechanism, the tapeless cutting can be realized in an inexpensive and space-saving manner. Cutting device. As a result, it is possible to simplify the structure of the transport mechanism for transporting the divided wafers from the cradle, and it is also possible to reduce the cost of the apparatus itself and to suppress an increase in size.
1‧‧‧切削裝置 1‧‧‧Cutting device
10‧‧‧夾頭台 10‧‧‧ chuck table
11‧‧‧吸引保持部 11‧‧‧Attraction and Maintenance Department
11a‧‧‧保持面 11a‧‧‧ Keep face
100‧‧‧晶片盒 100‧‧‧ wafer cassette
101‧‧‧突伸部 101‧‧‧diffuse
100a、110a‧‧‧開口 100a, 110a‧‧‧ openings
110‧‧‧邊材盒 110‧‧‧ sapwood box
111‧‧‧邊材突伸部 111‧‧‧Sapwood protruding parts
12‧‧‧基台 12‧‧‧Abutment
13‧‧‧退刀槽 13‧‧‧Unslot
14‧‧‧吸引孔 14‧‧‧Attraction hole
2‧‧‧裝置本體 2‧‧‧ device body
20、20a、20b‧‧‧加工機構 20, 20a, 20b‧‧‧ processing institutions
21‧‧‧切削刀 21‧‧‧Cutter
22‧‧‧機殼 22‧‧‧Shell
23‧‧‧噴嘴 23‧‧‧Nozzles
3a、3b‧‧‧柱部 3a, 3b‧‧‧ pillar
30‧‧‧X軸移動機構(加工傳送機構) 30‧‧‧X-axis moving mechanism (processing transfer mechanism)
31‧‧‧分隔板 31‧‧‧ partition board
32‧‧‧皺褶片 32‧‧‧ pleated sheets
4‧‧‧支撐構件 4‧‧‧Support members
40‧‧‧Y軸移動機構(分度傳送機構) 40‧‧‧Y-axis moving mechanism (indexing mechanism)
50‧‧‧Z軸移動機構 50‧‧‧Z-axis moving mechanism
60‧‧‧晶片移動機構 60‧‧‧ wafer moving mechanism
61‧‧‧晶片吹送噴嘴 61‧‧‧ wafer blowing nozzle
62‧‧‧噴射孔 62‧‧‧ spray holes
70‧‧‧引導盤 70‧‧‧boot disk
71‧‧‧下方配設部 71‧‧‧ below the Department of Arrangement
71a‧‧‧側壁 71a‧‧‧ Sidewall
72‧‧‧延伸部 72‧‧‧Extension
72a‧‧‧導壁 72a‧‧‧Guide wall
80‧‧‧攝像機構 80‧‧‧ camera organization
F‧‧‧流體 F‧‧‧ fluid
T‧‧‧晶片 T‧‧‧ wafer
W‧‧‧工件 W‧‧‧Workpiece
O‧‧‧搬出入區域 O‧‧‧ moving in and out of the area
P‧‧‧加工區域 P‧‧‧Processing area
L1、L2‧‧‧分割預定線 L1, L2‧‧‧ dividing line
圖1所示為實施形態之切削裝置的構成例之立體圖；圖2所示為實施形態之切削裝置的構成例的主要部位的立體圖；圖3(a)為截面圖，表示實施形態之切削裝置中，將保持分割加工後的晶片之夾頭台定位於搬出入區域時之狀態，圖3(b)為截面圖，表示使圖3(a)所示之夾頭台從搬出入區域朝向加工區域移動時之狀態，圖3(c)為截面圖，表示將所有的晶片都從圖3(b)所示之夾頭台吹送走時之狀態，圖3(d)為截面圖，表示將圖3(c)所示之夾頭台定位於加工區域時之狀態；圖4所示為實施形態之變形例的切削裝置的構成例的主要部位的立體圖；以及圖5所示為實施形態之其他變形例的切削裝置的構成例的主要部位的立體圖。 1 is a perspective view showing a configuration example of a cutting device according to an embodiment; FIG. 2 is a perspective view showing a main part of a configuration example of the cutting device according to the embodiment; and FIG. 3(a) is a cross-sectional view showing the cutting device of the embodiment. In the state in which the chuck table of the wafer after the division processing is positioned in the carry-in/out area, FIG. 3(b) is a cross-sectional view showing that the chuck table shown in FIG. 3(a) is processed from the loading/unloading area toward the processing. FIG. 3(c) is a cross-sectional view showing a state in which all the wafers are blown away from the chuck table shown in FIG. 3(b), and FIG. 3(d) is a cross-sectional view showing the state in which the region is moved. 3 is a state in which the chuck table shown in FIG. 3(c) is positioned in the processing region; FIG. 4 is a perspective view showing a main part of a configuration example of the cutting device according to the modification of the embodiment; and FIG. A perspective view of a main part of a configuration example of a cutting device according to another modification.
以下針對用於實施本發明之形態(實施形態)，一邊參照圖式一邊詳細地作說明。以下的實施形態中所記載的內容並非用來限制本發明者。又，以下所記載之構成要 素中，包含了本領域業者可輕易設想到者、實質上為相同者。此外，以下所記載之構成可以適當地加以組合。又，在不脫離本發明之主旨的範圍內，可以進行構成之各種省略、置換或變更。 Hereinafter, the form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The contents described in the following embodiments are not intended to limit the inventors. Moreover, the composition described below It includes those who can be easily imagined by the industry and are essentially the same. Further, the configurations described below can be combined as appropriate. Further, various omissions, substitutions, and changes may be made without departing from the scope of the invention.
〔實施形態〕 [Embodiment]
依據圖1到圖3來說明實施形態之切削裝置。圖1所示為實施形態之切削裝置的構成例的立體圖。圖2所示為實施形態之切削裝置的構成例的主要部位的立體圖。圖3(a)為截面圖，表示實施形態之切削裝置中，將保持分割加工後的晶片之夾頭台定位於搬出入區域時的狀態。圖3(b)為截面圖，表示使圖3(a)所示之夾頭台從搬出入區域朝向加工區域移動時之狀態。圖3(c)為截面圖，表示將所有的晶片都從圖3(b)所示之夾頭台吹送走時之狀態。圖3(d)為截面圖，表示將圖3(c)所示之夾頭台定位於加工區域時之狀態。 A cutting apparatus according to an embodiment will be described with reference to Figs. 1 to 3 . Fig. 1 is a perspective view showing a configuration example of a cutting device according to an embodiment. Fig. 2 is a perspective view showing a main part of a configuration example of the cutting device of the embodiment. (a) of FIG. 3 is a cross-sectional view showing a state in which the chuck table of the wafer after the division processing is positioned in the carry-in/out area in the cutting apparatus of the embodiment. Fig. 3 (b) is a cross-sectional view showing a state in which the chuck table shown in Fig. 3 (a) is moved from the carry-in area to the processing area. Fig. 3 (c) is a cross-sectional view showing a state in which all the wafers are blown away from the chuck table shown in Fig. 3 (b). Fig. 3 (d) is a cross-sectional view showing a state in which the chuck table shown in Fig. 3 (c) is positioned in the processing region.
圖1所示之本實施形態的切削裝置1是藉由使加工機構20與保持工件W之夾頭台10相對移動的方式，而分割加工工件W(顯示於圖2)者。切削裝置1是將板狀的工件W分割成複數個晶片T(顯示於圖3(b))，並收容在晶片盒100中。切削裝置1，如圖1所示，具備2個加工機構20，亦即，為2個轉軸的切割機(dicer)，為所謂的對向軸雙刃式(facing dual type)的切削裝置。切削裝置1，如圖1所示，具有夾頭台10、加工機構20、X軸移動機構30(相當於加工傳送機構)、Y軸移動機構40(相當於分度傳送機構)、Z軸移動機構50、晶片移動機構60、引導盤70以及未圖示出之控制機構。 The cutting apparatus 1 of the present embodiment shown in Fig. 1 divides the workpiece W (shown in Fig. 2) by moving the processing mechanism 20 relative to the chuck table 10 holding the workpiece W. In the cutting apparatus 1, the plate-shaped workpiece W is divided into a plurality of wafers T (shown in FIG. 3(b)) and housed in the wafer cassette 100. As shown in FIG. 1, the cutting apparatus 1 is provided with two processing mechanisms 20, that is, a dicer of two rotating shafts, and is a so-called facing dual type cutting device. As shown in FIG. 1, the cutting apparatus 1 has a chuck table 10, a machining mechanism 20, an X-axis moving mechanism 30 (corresponding to a machining conveyance mechanism), a Y-axis moving mechanism 40 (corresponding to an indexing conveyance mechanism), and a Z-axis movement. Mechanism 50, wafer moving mechanism 60, guide disk 70, and control mechanisms not shown.
在此，工件W是透過切削裝置1所加工的加工對象，在本實施形態中，如圖2所示，其為以互相直交之分割預定線L1、L2所劃分且設有複數個具有預定之電極等並以樹脂密封的元件的封裝基板。工件W是藉由切削裝置1驅使夾頭台10與具有切削刀21的加工機構20相對移動，以在分割預定線L1、L2上實施分割加工的作法，而被分割成一個個包含有元件之晶片T。 Here, the workpiece W is a processing target processed by the cutting device 1. In the present embodiment, as shown in Fig. 2, it is divided by predetermined dividing lines L1, L2 which are orthogonal to each other, and a plurality of predetermined ones are provided. A package substrate of an element such as an electrode and sealed with a resin. The workpiece W is driven by the cutting device 1 to move the chuck table 10 relative to the machining mechanism 20 having the cutting blade 21 to perform division processing on the division lines L1 and L2, and is divided into individual components. Wafer T.
夾頭台10，是透過操作員將分割加工前之工件W載置於保持面11a，且不使用切割膠帶以保持面11a直接吸引保持該工件W者。又，夾頭台10亦為，在分割成一個個的晶片T脫離之時，於停止保持面11a的吸引後，將作為流體使用之加壓氣體間歇性地供應至該保持面11a以使其從該保持面11a噴射出來，而使晶片T能確實地脫離夾頭台10者。 The chuck table 10 is placed on the holding surface 11a by the operator, and the holding surface 11a is directly sucked and held by the holding surface 11a without using the dicing tape. In addition, when the wafer T divided into individual pieces is detached, the suction gas used as the fluid is intermittently supplied to the holding surface 11a after the suction of the holding surface 11a is stopped. The wafer T is ejected from the holding surface 11a so that the wafer T can be surely separated from the chuck table 10.
夾頭台10設有具有吸引保持工件W之保持面11a的平板狀吸引保持部11，和使吸引保持部11繞與保持面11a直交之Z軸旋轉的基台12(顯示於圖3)。吸引保持部11，如圖2所示，在保持面11a上形成複數個用於避免接觸到切入分割預定線L1、L2之切削刀21的退刀槽13。又，吸引保持部11將用於吸引工件W之一個個晶片T的吸引孔14以對應各個晶片T的方式形成於保持面11a上。吸引孔14中，除了和圖未示出之吸引源與流體供給源連接之外，還可透過吸引源從吸引孔14吸引周圍氣體，並可透過流體供給源從吸引孔14間歇性地噴射作為流體之加壓氣體。再者，在本發 明中，從夾頭台10之吸引保持部11的吸引孔14間歇性地被噴射出的流體，可以是水等液體，也可以是加壓過的空氣等氣體，也可以是將水等液體與加壓過之空氣等氣體混合而成者。 The chuck table 10 is provided with a flat-plate suction holding portion 11 having a holding surface 11a for sucking and holding the workpiece W, and a base 12 (shown in FIG. 3) for rotating the suction holding portion 11 around the Z-axis orthogonal to the holding surface 11a. As shown in FIG. 2, the suction holding portion 11 is formed with a plurality of undercut grooves 13 for avoiding contact with the cutting blades 21 cut into the planned dividing lines L1, L2 on the holding surface 11a. Further, the suction holding portion 11 forms the suction holes 14 for sucking the individual wafers T of the workpiece W on the holding surface 11a so as to correspond to the respective wafers T. In addition to the suction source and the fluid supply source, the suction hole 14 can also attract the surrounding gas from the suction hole 14 through the suction source, and can be intermittently ejected from the suction hole 14 through the fluid supply source. Pressurized gas of fluid. Furthermore, in this issue In the present invention, the fluid that is intermittently ejected from the suction holes 14 of the suction holding portion 11 of the chuck table 10 may be a liquid such as water, a gas such as pressurized air, or a liquid such as water. It is mixed with a gas such as pressurized air.
加工機構20是一邊從噴嘴23供給加工液到夾頭台10所保持之工件W，一邊以裝在圖未示出之轉軸前端的切削刀21分割加工工件W者。加工機構20，是在對工件W之分割預定線L1、L2中設於工件W的外緣部的四條分割預定線L2實施分割加工後，才對在工件W的中央部位之分割預定線L1實施分割加工。轉軸分別被連結至被角柱狀之機殼22支撐成可各自旋轉，並各自收納在機殼22中之圖未示出的刀片驅動源。切削刀21是概呈環形形狀之極薄的切削研磨石，並各自可裝卸自如地裝設在轉軸上。切削刀21是透過以刀片驅動源所產生之旋轉力而旋轉驅動。本實施形態的2個加工機構20(以下，以符號20a、20b表示)的轉軸之軸心方向是設定在與保持面11a平行的Y軸方向上。 The processing mechanism 20 divides the workpiece W by the cutting blade 21 attached to the tip end of the rotating shaft (not shown) while supplying the machining liquid from the nozzle 23 to the workpiece W held by the chuck table 10. The processing mechanism 20 performs division processing on the four divided planned lines L2 provided on the outer edge portion of the workpiece W in the planned dividing lines L1 and L2 of the workpiece W, and then performs the dividing line L1 on the center portion of the workpiece W. Split processing. The rotating shafts are respectively coupled to the blade driving source which is supported by the corner cylindrical casing 22 so as to be rotatable and respectively housed in the casing 22, not shown. The cutting blade 21 is an extremely thin cutting stone having a substantially annular shape, and is detachably attached to the rotating shaft. The cutter 21 is rotationally driven by a rotational force generated by a blade drive source. The axial direction of the rotation axis of the two machining mechanisms 20 (hereinafter referred to as reference numerals 20a and 20b) of the present embodiment is set in the Y-axis direction parallel to the holding surface 11a.
其中一側的加工機構20a，是如圖1所示地，透過Y軸移動機構40、Z軸移動機構50等設置在從裝置本體2豎立設置的其中一側的柱部3a上。另一側的加工機構20b，是如圖1所示地，透過Y軸移動機構40、Z軸移動機構50等設置在另一側的柱部3b上。 The processing mechanism 20a on one side is provided on the column portion 3a on one side of the apparatus body 2 that is erected by the Y-axis moving mechanism 40, the Z-axis moving mechanism 50, and the like as shown in Fig. 1 . The processing mechanism 20b on the other side is provided on the other column portion 3b via the Y-axis moving mechanism 40, the Z-axis moving mechanism 50, and the like as shown in Fig. 1 .
加工機構20a、20b是透過Y軸移動機構40以及Z軸移動機構50而可在Y軸方向以及Z軸方向上移動，並變得可將切削刀21定位在夾頭台10之保持面11a的任意位置 上。在支撐另一側之加工機構20b的Z軸移動機構50上，也固定有可拍攝工件W之上表面的攝像機構80，並與轉軸一體移動。攝像機構80具有CCD攝影機，用來拍攝被保持於夾頭台10上之分割加工前的工件W之應當分割區域。CCD攝影機會拍攝被保持於夾頭台10上之工件W，以攝得用於完成工件W與切削刀21進行位置對齊之校準作業的影像，並將所攝得之影像輸出到控制機構。 The machining mechanisms 20a and 20b are movable in the Y-axis direction and the Z-axis direction by the Y-axis moving mechanism 40 and the Z-axis moving mechanism 50, and the cutting blade 21 can be positioned on the holding surface 11a of the chuck table 10. Anywhere on. On the Z-axis moving mechanism 50 that supports the processing mechanism 20b on the other side, an image pickup mechanism 80 that can photograph the upper surface of the workpiece W is also fixed and moves integrally with the rotating shaft. The image pickup mechanism 80 has a CCD camera for taking a divided region of the workpiece W before the division processing held by the chuck table 10. The CCD camera photographs the workpiece W held on the chuck table 10 to take an image for performing a calibration operation for aligning the workpiece W with the cutter 21, and outputs the captured image to the control mechanism.
X軸移動機構30，是使夾頭台10在將工件W與晶片T從夾頭台10搬出搬入的搬出入區域O，與以加工機構20將工件W分割加工之加工區域P之間，沿X軸方向進行加工傳送(移動)者。在加工區域P中，夾頭台10是位於加工機構20a、20b的下方。還有，在搬出入區域O與加工區域P之間設有分隔板31(顯示在圖3)。分隔板31是設於攝像機構80與晶片移動機構60之間。 The X-axis moving mechanism 30 is between the loading/unloading area O for loading and unloading the workpiece W and the wafer T from the chuck table 10, and the processing area P for dividing the workpiece W by the processing mechanism 20. The processing is transmitted (moved) in the X-axis direction. In the processing region P, the chuck table 10 is located below the processing mechanisms 20a, 20b. Further, a partition plate 31 (shown in FIG. 3) is provided between the carry-in area O and the processing area P. The partition plate 31 is provided between the imaging unit 80 and the wafer moving mechanism 60.
X軸移動機構30使基台12可在X軸方向上移動。此外，X軸移動機構30的上方被可自由伸縮之皺褶片32所遮蓋。皺褶片32在X軸方向上形成為直線狀，並連貫基台12，以將兩端部安裝在裝置本體2之X軸方向的兩端部。皺褶片32是由可任意折疊之適當材料所構成，且可隨著基台12，亦即夾頭台10，在X軸方向上移動而伸縮。皺褶片32可防止加工液附著至X軸移動機構30上。 The X-axis moving mechanism 30 allows the base 12 to move in the X-axis direction. Further, the upper side of the X-axis moving mechanism 30 is covered by the retractable wrinkle sheet 32. The crease sheet 32 is formed linearly in the X-axis direction, and is continuous with the base 12 so that both end portions are attached to both end portions of the apparatus main body 2 in the X-axis direction. The corrugated sheet 32 is made of a suitable material that can be arbitrarily folded, and can be expanded and contracted in the X-axis direction along with the base 12, that is, the chuck table 10. The crease sheet 32 prevents the machining fluid from adhering to the X-axis moving mechanism 30.
Y軸移動機構40是使加工機構20a、20b在與X軸方向直交之Y軸方向上作分度傳送(移動)者。Y軸移動機構40是以和加工機構20a、20b1對1對應的方式設置在柱部 3a、3b上，並使所對應之加工機構20a、20b在Y軸方向上移動。Z軸移動機構50是使加工機構20a、20b在與X軸方向及Y軸方向直交之Z軸方向上升降(移動)者。Z軸移動機構50是以和加工機構20a、20b形成1對1對應而設置在柱部3a、3b上，並使所對應之加工機構20a、20b在Z軸方向上移動。 The Y-axis moving mechanism 40 is one in which the machining mechanisms 20a and 20b are indexed (moved) in the Y-axis direction orthogonal to the X-axis direction. The Y-axis moving mechanism 40 is disposed in the column portion in such a manner as to correspond to the processing mechanisms 20a and 20b1. On the 3a, 3b, the corresponding machining mechanisms 20a, 20b are moved in the Y-axis direction. The Z-axis moving mechanism 50 is a member that raises (moves) the machining mechanisms 20a and 20b in the Z-axis direction orthogonal to the X-axis direction and the Y-axis direction. The Z-axis moving mechanism 50 is provided on the column portions 3a and 3b in a one-to-one correspondence with the machining mechanisms 20a and 20b, and moves the corresponding machining mechanisms 20a and 20b in the Z-axis direction.
晶片移動機構60是將流體F(顯示在圖3(a)等)噴射到分割加工後被分割成複數個的夾頭台10上的晶片T上，以使晶片T從夾頭台10往晶片盒100移動者。晶片移動機構60，如圖2及圖3所示，設有晶片吹送噴嘴61。 The wafer moving mechanism 60 is formed by spraying a fluid F (shown in FIG. 3(a) or the like) onto the wafer T divided into a plurality of chuck stages 10 after the dividing process, so that the wafer T is transferred from the chuck table 10 to the wafer. Box 100 moves. As shown in FIGS. 2 and 3, the wafer moving mechanism 60 is provided with a wafer blowing nozzle 61.
晶片吹送噴嘴61配置在搬出入區域O與加工區域P的分界處附近，可停止來自夾頭台10之保持面11a的吸引，以向著在搬出入區域O與加工區域P之間移動之夾頭台10的保持面11a上的晶片T，從上方往晶片盒100噴射流體F。晶片吹送噴嘴61是將晶片T從夾頭台10吹送向晶片盒100者。 The wafer blowing nozzle 61 is disposed in the vicinity of the boundary between the loading/unloading area O and the processing area P, and can stop the suction from the holding surface 11a of the chuck table 10 to move toward the chuck between the loading/unloading area O and the processing area P. The wafer T on the holding surface 11a of the stage 10 ejects the fluid F from the upper side to the wafer cassette 100. The wafer blowing nozzle 61 is a person that blows the wafer T from the chuck table 10 to the wafer cassette 100.
晶片吹送噴嘴61形成為圓筒狀，並以豎立設置在裝置本體2之上表面的支撐構件4支撐兩端。晶片吹送噴嘴61藉由配置成與Y軸方向平行，並以支撐構件4支撐兩端的方式，而配置成跨越X軸移動機構30與夾頭台10的狀態。晶片吹送噴嘴61與圖未示出之流體供給源連接，並設有複數個噴射孔62，用於將流體供給源所供給之流體F噴射出去。複數個噴射孔62是在Y軸方向上排列成直線狀。晶片吹送噴嘴61之噴射孔62，從切削裝置1之側面看去，是從晶片吹送噴嘴61以比水平方向還些許向下地噴射出流體F。還有，在 本發明中，從晶片吹送噴嘴61之噴射孔62所噴射出的流體F，可以是水等液體，也可以是加壓過的空氣等氣體，也可以是將水等液體與加壓過之空氣等氣體混合而成者。再者，在本發明中，噴射孔62也可以是沿著晶片吹送噴嘴61之延伸方向的細孔形狀。 The wafer blowing nozzle 61 is formed in a cylindrical shape and supported at both ends by a support member 4 which is erected on the upper surface of the apparatus body 2. The wafer blowing nozzle 61 is disposed so as to straddle the X-axis moving mechanism 30 and the chuck stage 10 by being disposed in parallel with the Y-axis direction and supporting both ends by the support member 4. The wafer blowing nozzle 61 is connected to a fluid supply source (not shown), and is provided with a plurality of injection holes 62 for injecting the fluid F supplied from the fluid supply source. The plurality of injection holes 62 are linearly arranged in the Y-axis direction. The injection hole 62 of the wafer blowing nozzle 61, as seen from the side of the cutting device 1, is a small downward ejection of the fluid F from the wafer blowing nozzle 61 in the horizontal direction. Also, at In the present invention, the fluid F ejected from the injection holes 62 of the wafer blowing nozzle 61 may be a liquid such as water, a gas such as pressurized air, or a liquid such as water and pressurized air. The gas is mixed. Further, in the present invention, the injection hole 62 may have a pore shape along the extending direction of the wafer blowing nozzle 61.
引導盤70是與夾頭台10一體被加工傳送，亦即在X軸方向上移動者。引導盤70是從夾頭台10朝向晶片盒100，從比夾頭台10的保持面11a還低的位置延伸出去，並遮蓋X軸移動機構30者。引導盤70是安裝在夾頭台10之基台12上，而被配置在比保持面11a還低的位置上，同時並不會與吸引保持部11一起繞Z軸旋轉。又，引導盤70是安裝在夾頭台10之基台12上，以遮蓋X軸移動機構30的上方。 The guide tray 70 is integrally processed and conveyed with the chuck table 10, that is, moved in the X-axis direction. The guide disk 70 extends from the chuck table 10 toward the wafer cassette 100, and is extended from a position lower than the holding surface 11a of the chuck table 10, and covers the X-axis moving mechanism 30. The guide tray 70 is mounted on the base 12 of the chuck table 10, and is disposed at a position lower than the holding surface 11a, and does not rotate around the Z-axis together with the suction holding portion 11. Further, the guide tray 70 is mounted on the base 12 of the chuck table 10 to cover the upper side of the X-axis moving mechanism 30.
引導盤70，如圖2以及圖3所示，具有從基台12往基台12之外周緣方向延伸出去而配置於吸引保持部11下方之下方配設部71，和從下方配設部71在X軸方向上朝遠離加工區域P之方向延伸出去的延伸部72。下方配設部71中，設有從外周緣往上方豎立設置之側壁71a。側壁71a可以抑制從夾頭台10吹送出來之晶片T從引導盤70掉落之情形。在延伸部72中，設有從Y軸方向之兩側緣往上方豎立設置之導壁72a。導壁72a可將從夾頭台10吹送出來之晶片T引導向晶片盒10。 As shown in FIGS. 2 and 3, the guide tray 70 has a lower arrangement portion 71 that extends from the base 12 to the outer peripheral direction of the base 12 and is disposed below the suction holding portion 11, and a lower arrangement portion 71. An extension 72 that extends away from the processing region P in the X-axis direction. The lower arrangement portion 71 is provided with a side wall 71a that is erected upward from the outer periphery. The side wall 71a can suppress the wafer T blown from the chuck table 10 from falling from the guide tray 70. The extension portion 72 is provided with a guide wall 72a that is erected upward from both side edges in the Y-axis direction. The guide wall 72a guides the wafer T blown from the chuck table 10 toward the wafer cassette 10.
又，在切削裝置1之裝置本體2中，是將用於收容晶片T之晶片盒100配置成可裝卸式。晶片盒100被安裝在裝置本體2時，是包夾搬出入區域O而與加工區域P被定位在相 反側。晶片盒100是鄰接於X軸移動機構30之搬出入區域O側的端部而配置。晶片盒100與X軸移動機構30之搬出入區域O側的端部是排列在X軸方向上。晶片盒100，如圖3所示，於比夾頭台10之吸引保持部11的保持面11a還低的位置形成開口。晶片盒100是由網狀的構件所構成，並形成於上方作出開口，亦即上方設有開口100a，的盒體狀。 Further, in the apparatus main body 2 of the cutting apparatus 1, the wafer cassette 100 for accommodating the wafer T is placed in a detachable type. When the wafer cassette 100 is mounted on the apparatus body 2, the package is carried in and out of the area O and the processing area P is positioned in the phase. Reverse side. The wafer cassette 100 is disposed adjacent to the end of the X-axis moving mechanism 30 on the side of the loading/unloading area O. The end portions of the wafer cassette 100 and the X-axis moving mechanism 30 on the loading/unloading area O side are arranged in the X-axis direction. As shown in FIG. 3, the wafer cassette 100 is formed at an opening lower than the holding surface 11a of the suction holding portion 11 of the chuck table 10. The wafer cassette 100 is composed of a mesh member and is formed in a box shape in which an opening is formed in the upper side, that is, an opening 100a is provided.
晶片盒100之開口100a是設定在比引導盤70之延伸部72的前端還低的位置上。亦即，將引導盤70之延伸部72的前端是設定在比晶片盒100之開口100a還高的位置上。又，晶片盒100之開口100a具有使鄰接於X軸移動機構30之端部以遮蓋X軸移動機構30的方式朝向夾頭台10突伸的突伸部101。亦即，突伸部101是將晶片盒100之開口100a附近的端部，以遮蓋X軸移動機構30的方式延著X軸方向朝向夾頭台10突伸。 The opening 100a of the wafer cassette 100 is set at a position lower than the front end of the extending portion 72 of the guide tray 70. That is, the front end of the extending portion 72 of the guide tray 70 is set at a position higher than the opening 100a of the wafer cassette 100. Further, the opening 100a of the wafer cassette 100 has a projection portion 101 that protrudes toward the chuck table 10 so as to cover the X-axis moving mechanism 30 at an end portion adjacent to the X-axis moving mechanism 30. That is, the protruding portion 101 protrudes toward the chuck table 10 in the X-axis direction so as to cover the X-axis moving mechanism 30 so as to cover the X-axis moving mechanism 30.
此外，晶片盒100之設有開口100a的突伸部101，如圖3(c)所示，在從搬出入區域O往加工區域P移動之夾頭台10通過晶片吹送噴嘴61的下方之前，會與引導盤70之延伸部72的前端在Z軸方向上重疊而形成相互重疊。亦即，在本實施型態中，至少在從搬出入區域O往加工區域P移動之夾頭台10通過晶片吹送噴嘴61的下方之前，引導盤70之延伸部72的前端與晶片盒100之開口100a是相互重疊的。 Further, as shown in FIG. 3(c), the projection portion 101 of the wafer cassette 100 having the opening 100a is passed before the wafer feed nozzle 61 is moved from the loading/unloading region O to the processing region P. The front ends of the extending portions 72 of the guide tray 70 are overlapped in the Z-axis direction to form a mutual overlap. That is, in the present embodiment, the leading end of the extending portion 72 of the guide tray 70 and the wafer cassette 100 are at least before the chuck table 10 moving from the loading/unloading region O to the processing region P passes under the wafer blowing nozzle 61. The openings 100a are overlapped with each other.
控制機構是分別控制構成切削裝置1之上述構成要素，以使對工件W之分割加工在切削裝置1上執行者。再者，控制機構是由例如，以CPU等所構成之演算處理裝置 或具有ROM、RAM等之圖未示出的微處理器(microprocessor)作為主體而構成，並和顯示加工動作狀態與前述影像等之顯示機構100，及操作員在登錄加工內容資訊等之時所使用的圖未示出之操作機構連接。 The control means controls the constituent elements constituting the cutting apparatus 1 so as to perform the division processing of the workpiece W on the cutting apparatus 1. Furthermore, the control mechanism is an arithmetic processing device composed of, for example, a CPU or the like. Or a microprocessor (not shown) such as a ROM or a RAM is configured as a main body, and the display unit 100 that displays the processing operation state and the video, and the operator, when registering the processed content information, etc. The operating mechanism shown in the figure is not shown.
接著，將就使用實施形態之切削裝置1的工件W的分割加工進行說明。在操作員將加工內容資訊登錄至控制機構，且已由操作員發出加工動作之開始指示時，切削裝置1即開始加工動作。在進行加工動作時，控制機構會驅動X軸移動機構30，以將夾頭台10定位到搬出入區域O。操作員將工件W載置於定位在搬出入區域O之夾頭台10的保持面11a上時，控制機構會通過吸引孔14將工件W吸引保持於夾頭台10的保持面11a上。再者，控制機構會停止從晶片移動機構60之晶片吹送噴嘴61的噴射孔62的流體F噴射。 Next, the division processing of the workpiece W using the cutting apparatus 1 of the embodiment will be described. When the operator registers the processed content information to the control unit and the operator has issued an instruction to start the machining operation, the cutting device 1 starts the machining operation. When the machining operation is performed, the control mechanism drives the X-axis moving mechanism 30 to position the chuck table 10 to the carry-in area O. When the operator places the workpiece W on the holding surface 11a of the chuck table 10 positioned in the loading/unloading area O, the control mechanism sucks and holds the workpiece W on the holding surface 11a of the chuck table 10 through the suction hole 14. Further, the control mechanism stops the fluid F ejection from the ejection holes 62 of the wafer blowing nozzle 61 of the wafer moving mechanism 60.
接下來，控制機構以X軸移動機構30將夾頭台10從搬出入區域O向加工區域P移動，並將保持於夾頭台10之工件W定位於攝像機構80的下方，使其被攝像機構80拍攝。攝像機構80會將所拍攝之影像資訊輸出到控制機構。並且，控制機構會實行型樣匹配等影像處理，以進行保持於夾頭台10上之工件W的分割預定線L1、L2，與加工機構20之切削刀21的位置對齊作業，而在將保持於夾頭台10之工件W搬送到加工區域P後，調整保持於夾頭台10之工件W與加工機構20的相對位置。 Next, the control unit moves the chuck table 10 from the carry-in/out area O to the processing area P by the X-axis moving mechanism 30, and positions the workpiece W held by the chuck table 10 below the image pickup unit 80 to be imaged. The agency 80 takes a picture. The camera mechanism 80 outputs the captured image information to the control mechanism. Further, the control unit performs image processing such as pattern matching to perform the division planned lines L1, L2 of the workpiece W held on the chuck table 10, and the position of the cutting blade 21 of the processing mechanism 20 is aligned, and will be maintained. After the workpiece W of the chuck table 10 is transported to the processing region P, the relative position of the workpiece W held by the chuck table 10 and the processing mechanism 20 is adjusted.
並且，控制機構會根據加工內容資訊，使切削刀21旋轉，以藉由切削刀21切削工件W之分割預定線L2。控 制機構在切削完分割預定線L2後，會以切削刀21切削工件W的分割預定線L1。在所有的分割預定線L1、L2上都實施過分割加工後，可將工件W分割成一個個晶片T。 Further, the control mechanism rotates the cutting blade 21 based on the machining content information to cut the planned dividing line L2 of the workpiece W by the cutting blade 21. control The cutting mechanism cuts the planned dividing line L1 of the workpiece W by the cutting blade 21 after the dividing line L2 is cut. After the division processing is performed on all of the division planned lines L1 and L2, the workpiece W can be divided into individual wafers T.
控制機構結束對所有分割預定線L1、L2的分割加工時，即停止加工機構20a、20b，並以X軸移動機構30使吸引保持著分割成一個個之複數個晶片T的夾頭台10，一直移動到搬出入區域O為止。並且，控制機構在夾頭台10到達搬出入區域O時，會停掉吸引源，以停止將所分割的一個個晶片T吸引保持的吸引力。 When the control means ends the division processing for all the division planned lines L1, L2, that is, the machining mechanisms 20a, 20b are stopped, and the X-axis moving mechanism 30 sucks and holds the chuck table 10 which is divided into a plurality of wafers T, respectively. Move until you move in and out of area O. Further, when the chuck table 10 reaches the carry-in/out area O, the control unit stops the suction source to stop the suction force that attracts and holds the divided ones of the wafers T.
之後，控制機構會進行驅動流體供給源等，以將加壓氣體以預定時間間歇性地供應到保持面11a之吸引孔14，並使其從保持面11a之吸引孔14噴射出來。並且，控制機構可藉由加壓氣體從夾頭台10確實地對已分割成一個個的複數個晶片T賦予震動，以使分割成一個個的複數個晶片T確實地脫離夾頭台10。 Thereafter, the control mechanism performs a driving fluid supply source or the like to intermittently supply the pressurized gas to the suction hole 14 of the holding surface 11a for a predetermined time, and ejects it from the suction hole 14 of the holding surface 11a. Further, the control means can positively impart vibration to the plurality of wafers T which have been divided into pieces by the pressurized gas from the chuck table 10, so that the plurality of wafers T divided into one piece are surely separated from the chuck stage 10.
控制機構在分割成一個個的複數個晶片T從夾頭台10之脫離結束時，會如圖3(a)所示，一邊使流體F從晶片吹送噴嘴61的噴射孔62噴射出來，一邊以X軸移動機構30使夾頭台10從搬出入區域O向加工區域P移動。於是，在夾頭台10的移動的同時，會如圖3(b)所示，從遠離晶片盒100側的晶片T開始依序地被吹向晶片盒100。被吹送之晶片T，可能直接被收容於晶片盒100，也可能在受到引導盤70導引後才被收容於晶片盒100。如圖3(c)所示，將所有的晶片T都從夾頭台10吹送走後，如圖3(d)所示，在夾頭台10通過晶 片吹送噴嘴61的下方時，控制機構會停止晶片移動機構60，並停止從晶片吹送噴嘴61之噴射孔62的流體F噴射。並且，操作員可如圖3(d)所示地，將晶片盒100從裝置本體2卸下，以取出經由分割加工而得到的晶片T。並且，可與前述步驟相同地，對分割加工前的工件W實施分割加工。 When the control unit is separated from the chuck table 10 by the plurality of wafers T which are divided into one, the fluid F is ejected from the ejection holes 62 of the wafer blowing nozzle 61 as shown in Fig. 3(a). The X-axis moving mechanism 30 moves the chuck table 10 from the carry-in/out area O to the processing area P. Then, while the chuck stage 10 is moving, as shown in FIG. 3(b), the wafer cassette 100 is sequentially blown from the wafer T far from the wafer cassette 100 side. The wafer T to be blown may be directly accommodated in the wafer cassette 100 or may be housed in the wafer cassette 100 after being guided by the guide tray 70. As shown in FIG. 3(c), after all the wafers T are blown away from the chuck stage 10, as shown in FIG. 3(d), the wafers are passed through the chuck stage 10. When the sheet blowing nozzle 61 is below, the control mechanism stops the wafer moving mechanism 60 and stops the fluid F ejection from the ejection orifice 62 of the wafer blowing nozzle 61. Further, the operator can detach the wafer cassette 100 from the apparatus body 2 as shown in FIG. 3(d) to take out the wafer T obtained by the division processing. Further, the workpiece W before the division processing can be subjected to the division processing in the same manner as the above-described steps.
如上所述，本實施形態之切削裝置1是在，未配備所謂的手動式搬送機構，且不使用切割膠帶的情形下直接將工件W吸引保持於夾頭台10上者。切削裝置1在未配備所謂的手動式搬送機構之切削裝置中，藉由追加設置晶片吹送噴嘴61與晶片盒100等，就可以用便宜且節省空間的方式，作到直接搬送分割後之晶片T。藉此，切削裝置1可以做到用於從夾頭台10搬送已分割之晶片T的搬送機構的構造的簡易化，可以做到裝置本身之低成本化並可以抑制大型化。 As described above, the cutting apparatus 1 of the present embodiment is not equipped with a so-called manual transport mechanism, and the workpiece W is directly sucked and held by the chuck table 10 without using a dicing tape. In the cutting device 1 in which the so-called manual transfer mechanism is not provided, by additionally providing the wafer blowing nozzle 61 and the wafer cassette 100, it is possible to directly transfer the divided wafer T by using an inexpensive and space-saving method. . Thereby, the cutting apparatus 1 can simplify the structure of the conveyance mechanism for conveying the divided wafer T from the chuck stage 10, and can reduce the cost of the apparatus itself and can suppress an increase in size.
此外，切削裝置1在將晶片T吹向晶片盒100之時，會有夾頭台10與晶片盒100分開的情形，因而設有將晶片T從夾頭台10導引向晶片盒100的引導盤70。切削裝置1在夾頭台10通過晶片吹送噴嘴61的下方之前，引導盤70之前端會與晶片盒100之開口100a相互重疊。因此，切削裝置1可以藉由引導盤70將從夾頭台10上吹送出來的晶片T確實地引導到晶片盒100去。 Further, when the cutting device 1 blows the wafer T toward the wafer cassette 100, the chuck table 10 is separated from the wafer cassette 100, and thus the guiding of the wafer T from the chuck table 10 to the wafer cassette 100 is provided. Disk 70. The cutting device 1 overlaps the front end of the guide disk 70 with the opening 100a of the wafer cassette 100 before the chuck table 10 passes under the wafer blowing nozzle 61. Therefore, the cutting device 1 can surely guide the wafer T blown from the chuck table 10 to the wafer cassette 100 by the guide disk 70.
此外，切削裝置1因為在晶片盒100之開口100a處具有朝向夾頭台10突伸的突伸部101，故可以將從夾頭台10上吹送出來的晶片T確實地收納在晶片盒100內。因此， 切削裝置1不必為了將夾頭台10上的晶片T收納於晶片盒100，而追加晶片吹送噴嘴61、引導盤70以及晶片盒100以外的設備。藉此，切削裝置1可以做到用於從夾頭台10搬送已分割之晶片T的搬送機構的構造的簡易化，並可以讓裝置本身低成本化與抑制大型化。 Further, since the cutting device 1 has the protruding portion 101 projecting toward the chuck table 10 at the opening 100a of the wafer cassette 100, the wafer T blown from the chuck table 10 can be surely accommodated in the wafer cassette 100. . therefore, The cutting device 1 does not need to add equipment other than the wafer blowing nozzle 61, the guide disk 70, and the wafer cassette 100 in order to store the wafer T on the chuck table 10 in the wafer cassette 100. As a result, the cutting device 1 can simplify the structure of the transport mechanism for transporting the divided wafer T from the chuck table 10, and can reduce the cost of the device itself and suppress the increase in size.
在前述之實施形態中，雖然將晶片吹送噴嘴61形成直線狀，但在本發明中，如圖4所示，從切削裝置1的平面視角來看，為了要讓兩端部比中央更位於從噴射孔62噴出的流體F之噴射方向的前方，而使晶片吹送噴嘴61的中央彎曲，以形成ㄑ字形亦可。再者，圖4所示是實施形態之變形例中的切削裝置之構成例的主要部位的立體圖，在圖4中，對與實施形態相同的部位，則是使用相同的符號而省略說明。 In the above-described embodiment, the wafer blowing nozzle 61 is formed in a linear shape. However, in the present invention, as shown in Fig. 4, in order to make the both end portions more located from the center than the center of the cutting device 1, The front side of the ejection direction of the fluid F ejected from the ejection hole 62 may be bent in the center of the wafer blowing nozzle 61 to form a U-shape. In addition, FIG. 4 is a perspective view of a main part of a configuration example of a cutting device in a modification of the embodiment, and in FIG. 4, the same portions as those in the embodiment are denoted by the same reference numerals, and description thereof will be omitted.
圖4中所示之晶片吹送噴嘴61因為形成ㄑ字形，所以是從兩端部之噴射孔62向晶片盒100的寬度之中央處噴射流體F。並且，晶片吹送噴嘴61可在不噴散晶片T的情形下，將其誘導向晶片盒100。因此，根據圖4所示之變形例，切削裝置1除了實施形態之效果外，還能做到將晶片T更確實地收納至晶片盒100中。 Since the wafer blowing nozzle 61 shown in FIG. 4 is formed in a U shape, the fluid F is ejected from the ejection holes 62 at both end portions toward the center of the width of the wafer cassette 100. Further, the wafer blowing nozzle 61 can induce the wafer T to the wafer cassette 100 without scattering the wafer T. Therefore, according to the modification shown in FIG. 4, in addition to the effects of the embodiment, the cutting apparatus 1 can more reliably store the wafer T in the wafer cassette 100.
又，在本發明中，除了晶片盒100之外，如圖5所示，也可以將邊材盒110做成可在裝置本體2上任意裝卸。再者，圖5所示為實施形態之其他變形例的切削裝置之構成例的主要部位的立體圖，在圖5中，對與實施形態相同的部位，則是使用相同的符號而省略說明。此外，圖5中， 雖然省略了晶片吹送噴嘴61，但圖5所示之切削裝置1是設有晶片吹送噴嘴61的。 Further, in the present invention, in addition to the wafer cassette 100, as shown in Fig. 5, the sapwood case 110 may be arbitrarily attached and detached to the apparatus main body 2. In addition, FIG. 5 is a perspective view of a main part of a configuration example of a cutting device according to another modification of the embodiment, and in FIG. 5, the same portions as those of the embodiment are denoted by the same reference numerals, and description thereof will be omitted. In addition, in Figure 5, Although the wafer blowing nozzle 61 is omitted, the cutting device 1 shown in FIG. 5 is provided with the wafer blowing nozzle 61.
當將邊材盒110安裝至裝置本體2時，是鄰接於X軸移動機構30的加工區域P側的端部而配置。邊材盒110與X軸移動機構30之加工區域P側的端部是排列在X軸方向上。邊材盒110是在比夾頭台10之吸引保持部11的保持面11a還低的位置形成開口，並由網狀的構件所構成，以形成於上方做出開口，亦即上方設有開口110a，的盒體狀。 When the sapwood case 110 is attached to the apparatus body 2, it is disposed adjacent to the end portion of the X-axis moving mechanism 30 on the processing region P side. The end portions of the sapwood box 110 and the X-axis moving mechanism 30 on the processing region P side are arranged in the X-axis direction. The sapwood box 110 is formed at a position lower than the holding surface 11a of the suction holding portion 11 of the ram 10, and is formed of a mesh member to form an opening at the upper side, that is, an opening is provided above. 110a, the box shape.
此外，邊材盒110之開口110a，是設定在比夾頭台10之保持面11a還低的位置上。又，邊材盒110之開口110a，具有將鄰接於X軸移動機構30之端部以遮蓋X軸移動機構30的方式向夾頭台10突伸的邊材突伸部111。邊材盒110是可將以加工機構20a、20b從工件W分割出來，且藉由切削刀21之旋轉以及加工機構20a、20b之噴嘴23所噴射出的加工液而飛散的邊材(圖未示)收容者。 Further, the opening 110a of the sapwood box 110 is set at a position lower than the holding surface 11a of the ram unit 10. Further, the opening 110a of the sapwood case 110 has a sapwood projecting portion 111 that protrudes toward the ram base 10 so as to cover the X-axis moving mechanism 30 at an end portion adjacent to the X-axis moving mechanism 30. The sapwood box 110 is a sapwood that can be separated from the workpiece W by the processing mechanisms 20a and 20b, and is scattered by the rotation of the cutting blade 21 and the machining liquid sprayed from the nozzles 23 of the machining mechanisms 20a and 20b (Fig. Show) the recipient.
再者，邊材是工件W之未被吸引保持於夾頭台10之吸引保持部11的保持面11a的部分，且是藉由以加工機構20a、20b沿分割預定線L2分割加工，而從工件W被割離所產生者。亦即，邊材是工件W之未設有元件的外緣部。在圖5所示之變形例中，將工件W之外緣部割離而產生的邊材，由於不會受到夾頭台10吸引，故會因切削刀21之旋轉以及從噴嘴23噴射出之加工液的力道而被噴飛。由於在該被噴飛之方向上設有可任意裝卸的邊材盒110，所以可將被噴飛之邊材自動地收容至邊材盒110內。因此，根據圖5所 示之變形例，切削裝置1除了實施形態之效果外，仍然可抑制成本的高漲以及大型化，同時還能將邊材確實地收容至邊材盒110中。 Further, the sapwood is a portion of the workpiece W that is not sucked and held by the holding surface 11a of the suction holding portion 11 of the chuck table 10, and is divided and processed along the dividing line L2 by the processing mechanisms 20a and 20b. The workpiece W is cut off from the person produced. That is, the sapwood is the outer edge portion of the workpiece W where no components are provided. In the modification shown in FIG. 5, the sapwood which is formed by cutting the outer edge portion of the workpiece W is not attracted by the chuck table 10, and is thus ejected by the rotation of the cutter 21 and from the nozzle 23. The strength of the machining fluid is sprayed. Since the sapwood case 110 arbitrarily detachable is provided in the direction in which the fly is to be ejected, the sapwood to be sprayed can be automatically accommodated in the sapwood case 110. Therefore, according to Figure 5 In the modified example, the cutting device 1 can suppress the increase in cost and size while suppressing the effect of the embodiment, and can also reliably store the sapwood into the sapwood case 110.
在前述實施形態中，是從晶片吹送噴嘴61向著從搬出入區域O往加工區域P之方向移動之夾頭台10的保持面11a上的晶片T噴射流體F。但是，在本發明中，也可以從晶片吹送噴嘴61向著從加工區域P往搬出入區域O之方向移動之夾頭台10的保持面11a上的晶片T噴射流體F。此時，控制機構在結束對所有的分割預定線L1、L2的分割加工時，會停止加工機構20a、20b，並在夾頭台10還位在加工區域P的狀態下，停止吸引源，以停止將已分割之一個個晶片T吸引保持住的吸引力。 In the above embodiment, the fluid F is ejected from the wafer blowing nozzle 61 toward the wafer T on the holding surface 11a of the chuck stage 10 that moves from the loading/unloading area O to the processing area P. However, in the present invention, the fluid F may be ejected from the wafer blowing nozzle 61 toward the wafer T on the holding surface 11a of the chuck stage 10 that moves from the processing region P to the loading/unloading region O. At this time, when the control unit ends the division processing for all the division planned lines L1 and L2, the machining mechanism 20a and 20b are stopped, and when the chuck table 10 is still positioned in the processing region P, the suction source is stopped. Stop attracting the attractive ones of the divided wafers T.
並且，控制機構會進行驅動流體供給源等，以將加壓氣體以預定時間間歇性地供給保持面11a的吸引孔14，使其從保持面11a的吸引孔14噴射出來。而且，控制機構可以透過加壓氣體從夾頭台10確實地對分割成一個個的複數個晶片T賦予震動，以使分割成一個個的複數個晶片T確實地從夾頭台10脫離。之後，控制機構一邊以X軸移動機構30使將分割成一個個的複數個晶片T吸引保持住之夾頭台10一直移動到搬出入區域O為止，一邊使流體F從晶片吹送噴嘴61之噴射孔62噴射出來。於是，在夾頭台10移動的同時，從靠近晶片盒100的晶片T開始依序地朝著晶片盒100吹送，並將被吹送之晶片T收容於晶片盒100中。並且，在夾頭台10位於搬出入區域O時，會停止晶片移動機構60，以 停止從晶片吹送噴嘴61之噴射孔62之流體F噴射。然後，操作員可將晶片盒100從裝置本體2卸下，取出經分割加工而得到之晶片T。並且，可與前述步驟相同地，對分割加工前的工件W實施分割加工。 Further, the control means drives the fluid supply source or the like to intermittently supply the pressurized gas to the suction hole 14 of the holding surface 11a for a predetermined period of time, and ejects it from the suction hole 14 of the holding surface 11a. Further, the control means can surely impart vibration to the plurality of wafers T divided into individual pieces from the chuck table 10 by the pressurized gas so that the plurality of wafers T divided into one piece are surely detached from the chuck stage 10. After that, the control unit causes the fluid F to be ejected from the wafer blowing nozzle 61 while moving the chuck table 10 that has been sucked and held by the plurality of wafers T that have been divided and held by the X-axis moving mechanism 30 until the loading/unloading area O is moved. Hole 62 is ejected. Then, while the chuck stage 10 is moving, the wafer T near the wafer cassette 100 is sequentially blown toward the wafer cassette 100, and the wafer T to be blown is accommodated in the wafer cassette 100. Further, when the chuck table 10 is located in the carry-in/out area O, the wafer moving mechanism 60 is stopped to The fluid F ejection from the injection holes 62 of the wafer blowing nozzle 61 is stopped. Then, the operator can detach the wafer cassette 100 from the apparatus body 2 and take out the wafer T obtained by the division processing. Further, the workpiece W before the division processing can be subjected to the division processing in the same manner as the above-described steps.
又，只要可作為工件而直接被保持於夾頭台10，則本發明中也可以適用於對封裝基板以外之各種工件W實施分割加工的切削裝置。 Further, the present invention can be applied to a cutting device that performs a division process on various workpieces W other than the package substrate, as long as it can be directly held by the chuck table 10 as a workpiece.
再者，本發明並非受限於上述實施形態以及變形例者。亦即，可以在不脫離本發明之主旨的範圍內進行各種變形而實施。 Furthermore, the present invention is not limited to the above embodiments and modifications. That is, various modifications can be made without departing from the spirit and scope of the invention.
1‧‧‧切削裝置 1‧‧‧Cutting device
10‧‧‧夾頭台 10‧‧‧ chuck table
11‧‧‧吸引保持部 11‧‧‧Attraction and Maintenance Department
11a‧‧‧保持面 11a‧‧‧ Keep face
100‧‧‧晶片盒 100‧‧‧ wafer cassette
100a‧‧‧開口 100a‧‧‧ openings
101‧‧‧突伸部 101‧‧‧diffuse
12‧‧‧基台 12‧‧‧Abutment
2‧‧‧裝置本體 2‧‧‧ device body
20a、20b‧‧‧加工機構 20a, 20b‧‧‧ processing institutions
21‧‧‧切削刀 21‧‧‧Cutter
30‧‧‧X軸移動機構 30‧‧‧X-axis moving mechanism
31‧‧‧分隔板 31‧‧‧ partition board
32‧‧‧皺褶片 32‧‧‧ pleated sheets
60‧‧‧晶片移動機構 60‧‧‧ wafer moving mechanism
61‧‧‧晶片吹送噴嘴 61‧‧‧ wafer blowing nozzle
70‧‧‧引導盤 70‧‧‧boot disk
71‧‧‧下方配設部 71‧‧‧ below the Department of Arrangement
71a‧‧‧側壁 71a‧‧‧ Sidewall
72‧‧‧延伸部 72‧‧‧Extension
72a‧‧‧導壁 72a‧‧‧Guide wall
80‧‧‧攝像機構 80‧‧‧ camera organization
F‧‧‧流體 F‧‧‧ fluid
W‧‧‧工件 W‧‧‧Workpiece
O‧‧‧搬出入區域 O‧‧‧ moving in and out of the area
P‧‧‧加工區域 P‧‧‧Processing area
T‧‧‧晶片 T‧‧‧ wafer
Claims (3)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013127835A JP6081868B2 (en) | 2013-06-18 | 2013-06-18 | Cutting equipment |
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| Publication Number | Publication Date |
|---|---|
| TW201507014A true TW201507014A (en) | 2015-02-16 |
| TWI609419B TWI609419B (en) | 2017-12-21 |
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| TW103114973A TWI609419B (en) | 2013-06-18 | 2014-04-25 | Cutting device |
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| JP (1) | JP6081868B2 (en) |
| KR (1) | KR102046667B1 (en) |
| CN (1) | CN104241143B (en) |
| TW (1) | TWI609419B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2016159376A (en) * | 2015-02-27 | 2016-09-05 | 株式会社ディスコ | Cutting device |
| JP2017054956A (en) | 2015-09-10 | 2017-03-16 | 株式会社ディスコ | Support tool for workpiece |
| JP6762651B2 (en) * | 2016-02-22 | 2020-09-30 | 株式会社ディスコ | Processing method |
| JP6765751B2 (en) * | 2016-06-21 | 2020-10-07 | 株式会社ディスコ | Work piece holding mechanism and processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4388640B2 (en) * | 1999-09-10 | 2009-12-24 | 株式会社ディスコ | CSP substrate holding member and CSP substrate table on which the CSP substrate holding member is placed |
| JP2003197568A (en) * | 2001-12-28 | 2003-07-11 | Tokyo Seimitsu Co Ltd | Singulation apparatus |
| KR100480628B1 (en) * | 2002-11-11 | 2005-03-31 | 삼성전자주식회사 | Chip pick-up method and device for manufacturing semiconductor device using air blowing |
| JP4777783B2 (en) * | 2006-01-26 | 2011-09-21 | 株式会社ディスコ | Laser processing equipment |
| JP5014892B2 (en) * | 2007-06-25 | 2012-08-29 | 株式会社ディスコ | Blade replacement tool |
| JP2011020231A (en) * | 2009-07-17 | 2011-02-03 | Disco Abrasive Syst Ltd | Cutting device |
| US8658436B2 (en) * | 2010-04-19 | 2014-02-25 | Tokyo Electron Limited | Method for separating and transferring IC chips |
| JP2011119767A (en) * | 2011-03-07 | 2011-06-16 | Sony Chemical & Information Device Corp | Method for dicing wafer, method for mounting, method for manufacturing chip with adhesive layer, and mounted body |
| JP5947010B2 (en) * | 2011-09-15 | 2016-07-06 | 株式会社ディスコ | Splitting device |
| JP6012945B2 (en) * | 2011-09-26 | 2016-10-25 | キヤノンマシナリー株式会社 | Substrate cutting device |
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| CN104241143B (en) | 2018-07-31 |
| JP2015002336A (en) | 2015-01-05 |
| JP6081868B2 (en) | 2017-02-15 |
| KR102046667B1 (en) | 2019-11-19 |
| TWI609419B (en) | 2017-12-21 |
| CN104241143A (en) | 2014-12-24 |
| KR20140147014A (en) | 2014-12-29 |
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