TW201433595A - Protective-membrane-forming film - Google Patents

Protective-membrane-forming film Download PDF

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TW201433595A
TW201433595A TW102144160A TW102144160A TW201433595A TW 201433595 A TW201433595 A TW 201433595A TW 102144160 A TW102144160 A TW 102144160A TW 102144160 A TW102144160 A TW 102144160A TW 201433595 A TW201433595 A TW 201433595A
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protective film
film
forming
acrylic polymer
mass
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TWI599600B (en
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Ken Takano
Tomonori Shinoda
Yuichiro Azuma
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Lintec Corp
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    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/308Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
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    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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    • C08L33/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
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Abstract

This protective-membrane-forming film, which is used to form a protective membrane that protects a semiconductor chip, contains an acrylic polymer (A), a curable epoxy component (B), and a filler (C). Epoxy-group-containing monomers constitute no more than 8% of the total mass of the monomers constituting the acrylic polymer (A). The glass transition temperature of the acrylic polymer (A) is greater than or equal to -3 DEG C, and at least one surface of the protective membrane obtained by curing this protective-membrane-forming film has a gloss value of at least 20 as measured in accordance with JIS Z 8741.

Description

保護膜形成用薄膜 Protective film forming film

本發明係關於例如為了保護半導體晶片之背面所使用之保護膜形成用薄膜。 The present invention relates to a film for forming a protective film used, for example, to protect the back surface of a semiconductor wafer.

迄今為止,有進行使用被稱為倒裝(face down)方式的構裝法之半導體裝置的製造。於倒裝方式中,半導體晶片係使經形成凸塊(bump)等之電極的晶片表面與基板等面對面接合的同時,因晶片背面呈裸露,而藉由保護膜來保護。而且,以保護膜保護之半導體晶片(以下稱為「附保護膜之晶片」)之背面係於保護膜上藉由雷射印刷等印刷記號、文字等。 Heretofore, there has been a fabrication of a semiconductor device using a mounting method called a face down method. In the flip-chip method, the semiconductor wafer is bonded to the surface of the wafer through which the electrode or the like is formed, and the substrate is bonded to the substrate, and the back surface of the wafer is exposed, and is protected by a protective film. Further, the back surface of the semiconductor wafer protected by the protective film (hereinafter referred to as "wafer with protective film") is printed on the protective film by laser printing or the like.

上述保護膜係藉由例如樹脂塗布等而形成,而近年來例如專利文獻1所揭示般,為確保膜厚之均一性等,黏貼保護膜形成用薄片而形成者係正被投入實際應用。此保護膜形成用薄片係將保護膜形成用薄膜設置於支撐薄片上而成者,該保護膜形成用薄膜含有包含環氧樹脂等之熱硬化性成分、及包含丙烯酸系聚合物等之接著劑聚合物成分。 The protective film is formed by, for example, resin coating. In recent years, for example, as disclosed in Patent Document 1, in order to ensure uniformity of film thickness and the like, a film formed by adhering a protective film is being put into practical use. In the film for forming a protective film, the film for forming a protective film is provided on a support sheet, and the film for forming a protective film contains a thermosetting component containing an epoxy resin or the like, and an adhesive containing an acrylic polymer or the like. Polymer composition.

另一方面,已知多種作為半導體中所使用之接著薄膜,例如專利文獻2中揭示,將以於B階段狀態下彼此相分離之彈性模數3500~10000GPa之樹脂A、及彈 性模數1~3000MPa之樹脂B的混合物作為必要成分者,作為半導體封裝等中所使用之接著薄膜。於專利文獻2之接著薄膜中,例如使用作為樹脂A之環氧樹脂、使用作為樹脂B之甲基丙烯酸酯與丙烯腈之共聚物的丙烯酸橡膠。 On the other hand, a variety of adhesive films used in semiconductors are known. For example, as disclosed in Patent Document 2, resin A having an elastic modulus of 3,500 to 10,000 GPa and a bomb are separated from each other in a B-stage state. A mixture of the resin B having a modulus of 1 to 3000 MPa is used as an essential component, and is used as a film for use in a semiconductor package or the like. In the adhesive film of Patent Document 2, for example, an epoxy resin as the resin A and an acrylic rubber using a copolymer of methacrylate and acrylonitrile as the resin B are used.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2002-280329號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-280329

[專利文獻2]日本特開2001-220556號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2001-220556

由專利文獻1中所揭示之保護膜形成用薄片來形成半導體晶片之保護膜的情況下,其附保護膜之晶片係容易發生因長期使用而於晶片與保護膜之接合部產生浮起、剝落,於保護膜上產生龜裂等之困擾,可靠性劣化。又,若如專利文獻2所揭示般,將2種成分呈相分離之組成物轉用於晶片用之保護膜,附保護膜之晶片的可靠性雖有提升的可能性,但有所謂的由雷射印刷之文字等的識別性容易變差的其他問題產生。 When the protective film for forming a semiconductor wafer is formed by the protective film forming sheet disclosed in Patent Document 1, the wafer with the protective film is liable to cause floating and peeling at the joint portion between the wafer and the protective film due to long-term use. The crack is generated on the protective film, and the reliability is deteriorated. Further, as disclosed in Patent Document 2, a composition in which two components are phase-separated is transferred to a protective film for a wafer, and the reliability of a wafer with a protective film is improved, but there is a so-called Other problems such as the recognition of characters such as laser printing are likely to be deteriorated.

本發明係鑑於以上之問題點而完成者,其係以提供一種保護膜形成用薄膜作為課題,該保護膜形成用薄膜係可得到可靠性高之附保護膜之晶片,同時可形成由雷射印刷之文字的辨識性優異的保護膜。 The present invention has been made in view of the above problems, and it is an object of the invention to provide a film for forming a protective film which is capable of obtaining a highly reliable protective film wafer and capable of forming a laser. A protective film with excellent visibility for printed characters.

本案發明者們為了解決上述課題而反覆鑽研的結果,著眼於保護膜形成用樹脂之丙烯酸系聚合物,其發現藉由在構成丙烯酸系聚合物的單體中含有含環氧基之單體,且調整其摻混比例於既定範圍的同時,使丙烯酸系聚合物之玻璃轉移溫度設定在既定範圍可解決上述課題,進而完成以下之本發明。 In order to solve the above problems, the inventors of the present invention have focused on the acrylic polymer of the resin for forming a protective film, and found that the monomer constituting the acrylic polymer contains an epoxy group-containing monomer. Further, the above-described problems can be solved by setting the glass transition temperature of the acrylic polymer to a predetermined range while adjusting the blending ratio within a predetermined range, and the following invention is completed.

即,本發明係提供以下之(1)~(8)。 That is, the present invention provides the following (1) to (8).

(1)一種保護膜形成用薄膜,其係用以形成保護半導體晶片的保護膜之保護膜形成用薄膜,該保護膜形成用薄膜含有(A)丙烯酸系聚合物、(B)環氧系硬化性成分、及(C)填料;構成(A)丙烯酸系聚合物之單體係以佔全部單體的8質量%以下之比例含有含環氧基之單體,並且(A)丙烯酸系聚合物之玻璃轉移溫度係-3℃以上;將該保護膜形成用薄膜硬化而得之保護膜之至少一面之藉由JIS Z 8741測定的光澤值係20以上。 (1) A film for forming a protective film for forming a film for forming a protective film for protecting a protective film of a semiconductor wafer, wherein the film for forming a protective film contains (A) an acrylic polymer and (B) an epoxy-based hardening film. The component and the (C) filler; the single system constituting the (A) acrylic polymer contains the epoxy group-containing monomer in an amount of 8% by mass or less of the total monomers, and (A) the acrylic polymer The glass transition temperature is -3 ° C or higher, and the gloss value measured by JIS Z 8741 is at least 20 on at least one side of the protective film obtained by curing the film for forming a protective film.

(2)如上述(1)記載之保護膜形成用薄膜,其中(A)丙烯酸系聚合物之玻璃轉移溫度係6℃以下。 (2) The film for forming a protective film according to the above (1), wherein the glass transition temperature of the (A) acrylic polymer is 6 ° C or lower.

(3)如上述(1)或(2)記載之保護膜形成用薄膜,其中構成(A)丙烯酸系聚合物之單體係進一步含有(甲基)丙烯酸烷基酯。 (3) The film for forming a protective film according to the above (1) or (2), wherein the single system comprising the (A) acrylic polymer further contains an alkyl (meth)acrylate.

(4)如上述(1)至(3)中任一項記載之保護膜形成用薄膜,其中構成(A)丙烯酸系聚合物之單體係以佔全部單體之12質量%以下之比例含有烷基之碳數為4以上之(甲基)丙烯酸烷基酯。 The film for forming a protective film according to any one of the above aspects (1), wherein the single system comprising the (A) acrylic polymer is contained in an amount of 12% by mass or less based on the total of the monomers. The alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms.

(5)如上述(4)記載之保護膜形成用薄膜,其中該烷基之碳數為4以上之(甲基)丙烯酸烷基酯係(甲基)丙烯酸丁酯。 (5) The film for forming a protective film according to the above (4), wherein the alkyl group has a carbon number of 4 or more (meth)acrylic acid alkyl ester (butyl) methacrylate.

(6)如上述(1)至(5)中任一項記載之保護膜形成用薄膜,其中(C)填料之含量為保護膜形成用薄膜之50質量%以上。 The film for forming a protective film according to any one of the above (1), wherein the content of the (C) filler is 50% by mass or more of the film for forming a protective film.

(7)如上述(1)至(6)中任一項記載之保護膜形成用薄膜,其係進一步含有(D)著色劑。 The film for forming a protective film according to any one of the above (1), further comprising (D) a coloring agent.

(8)一種附保護膜之晶片,其係具備半導體晶片與設置在該半導體晶片上之保護膜的附保護膜之晶片;該保護膜係將保護膜形成用薄膜硬化而形成者,並且該保護膜形成用薄膜含有(A)丙烯酸系聚合物、(B)環氧系硬化性成分、及(C)填料;構成(A)丙烯酸系聚合物之單體係以佔全部單體的8質量%以下之比例含有含環氧基之單體,並且(A)丙烯酸系聚合物之玻璃轉移溫度係-3℃以上;該保護膜之與該半導體晶片側的面相反的面之藉由JIS Z 8741測定的光澤值係20以上。 (8) A wafer with a protective film which is provided with a protective film of a semiconductor wafer and a protective film provided on the semiconductor wafer; the protective film is formed by curing a film for forming a protective film, and the protection is performed. The film for film formation contains (A) an acrylic polymer, (B) an epoxy-based curable component, and (C) a filler; and a single system constituting the (A) acrylic polymer to constitute 8 mass% of all monomers. The ratio of the following contains an epoxy group-containing monomer, and (A) the acrylic polymer has a glass transition temperature of -3 ° C or more; the surface of the protective film opposite to the surface of the semiconductor wafer is JIS Z 8741 The measured gloss value was 20 or more.

就本發明而言,其可提供一種保護膜形成用薄膜,其係可得到可靠性高的附保護膜之晶片,同時可形成由雷射印刷之文字的辨識性優異的保護膜。 According to the present invention, it is possible to provide a film for forming a protective film which can provide a highly reliable protective film-containing wafer and can form a protective film excellent in visibility of a letter printed by laser.

[實施發明之形態] [Formation of the Invention]

以下,就本發明使用其實施態樣以具體說明。 Hereinafter, the present invention will be specifically described using its embodiment.

又,本說明書中,「(甲基)丙烯酸」係使用來作為表示「丙烯酸」及「甲基丙烯酸」之雙方的用語,其它的類似用語亦同。 In the present specification, "(meth)acrylic acid" is used as a term indicating both "acrylic acid" and "methacrylic acid", and other similar terms are also the same.

[保護膜形成用薄膜] [film for forming a protective film]

關於本發明之保護膜形成用薄膜,其係用以形成保護半導體晶片之保護膜的薄膜,其係至少含有(A)丙烯酸系聚合物、(B)環氧系硬化性成分、及(C)填料者。 The film for forming a protective film of the present invention is a film for forming a protective film for protecting a semiconductor wafer, and comprises at least (A) an acrylic polymer, (B) an epoxy-based curable component, and (C) Filler.

<(A)丙烯酸系聚合物> <(A) Acrylic Polymer>

(A)丙烯酸系聚合物係賦予保護膜及保護膜形成用薄膜可撓性、成膜性之成分,其係將含環氧基之單體、及其他單體共聚合而得,且含環氧基之單體的比例在構成(A)丙烯酸系聚合物的全部單體中為8質量%以下。具體而言,構成(A)丙烯酸系聚合物之單體係包含:選自含環氧基之(甲基)丙烯酸酯及非丙烯酸系之含環氧基之單體中之1種以上的含環氧基之單體、及不具有環氧基之各種(甲基)丙烯酸酯、及/或非丙烯酸系之不含有環氧基之單體。在這樣的情況下,含環氧基之單體僅包含非丙烯酸系之含環氧基之單體時,構成丙烯酸系聚合物的單體係包含不具有環氧基的各種(甲基)丙烯酸酯。 (A) an acrylic polymer-based component which imparts flexibility and film-forming property to a film for forming a protective film and a protective film, which is obtained by copolymerizing an epoxy group-containing monomer and another monomer, and contains a ring. The ratio of the monomer of the oxy group is 8% by mass or less based on the total of the monomers constituting the (A) acrylic polymer. Specifically, the single system constituting the (A) acrylic polymer includes one or more selected from the group consisting of an epoxy group-containing (meth) acrylate and a non-acrylic epoxy group-containing monomer. A monomer of an epoxy group, and various (meth) acrylates having no epoxy group, and/or a monomer other than an epoxy group which does not contain an epoxy group. In such a case, when the epoxy group-containing monomer contains only the non-acrylic epoxy group-containing monomer, the single system constituting the acrylic polymer contains various (meth)acrylic groups having no epoxy group. ester.

如果含環氧基之單體的比例大於8質量%,則與(B)成分之硬化物的相溶性提升,後述之相分離構造變得不易形成,附保護膜之晶片的可靠性降低。另一方面,如 果丙烯酸系聚合物(A)於構成單體中完全不包含含環氧基之單體,則起因相分離之進行所致的保護膜之光澤值變得過度降低,而變得難以保持在後述的光澤值範圍內。也就是說,如果完全不包含含環氧基之單體,則於保護膜表面上會有起因於相分離之進行所致的微小凹凸產生,其結果,導致在保護膜表面之反射光的散射,故光澤值變小,雷射印刷部分的辨識性降低。 When the proportion of the epoxy group-containing monomer is more than 8% by mass, the compatibility with the cured product of the component (B) is improved, and the phase separation structure to be described later is less likely to be formed, and the reliability of the wafer with the protective film is lowered. On the other hand, like When the acrylic polymer (A) does not contain the epoxy group-containing monomer at all in the constituent monomer, the gloss value of the protective film due to the progress of phase separation becomes excessively lowered, and it becomes difficult to maintain the latter. The range of gloss values. That is to say, if the epoxy group-containing monomer is not contained at all, fine concavities and convexities due to the progress of phase separation occur on the surface of the protective film, and as a result, scattering of reflected light on the surface of the protective film is caused. Therefore, the gloss value becomes small, and the visibility of the laser printed portion is lowered.

從此等觀點來看,含環氧基之單體的含量較佳為佔全部單體的合計質量中的0.1質量%以上,更佳為1質量%以上。此外,為了改善光澤值同時更加提高可靠性,特佳為3質量%以上。又,含環氧基之單體的含量較佳為(A)丙烯酸系共聚物的全部單體之6質量%以下。 From such a viewpoint, the content of the epoxy group-containing monomer is preferably 0.1% by mass or more, and more preferably 1% by mass or more based on the total mass of all the monomers. Further, in order to improve the gloss value and to further improve the reliability, it is particularly preferably 3% by mass or more. Further, the content of the epoxy group-containing monomer is preferably 6% by mass or less based on the total monomers of the (A) acrylic copolymer.

作為含環氧基之(甲基)丙烯酸酯可列舉例如:(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸β-甲基縮水甘油酯(β-methyl glycidyl(meth)acrylate)、(甲基)丙烯酸(3,4-環氧基環己基)甲酯、(甲基)丙烯酸3-環氧基環-2-羥基丙酯等,作為非丙烯酸系之含環氧基之單體可列舉例如:丁烯酸縮水甘油酯、烯丙基縮水甘油醚等。作為含環氧基之單體較佳為含環氧基之(甲基)丙烯酸酯。 Examples of the epoxy group-containing (meth) acrylate include glycidyl (meth) acrylate and β-methyl glycidyl (meth) acrylate. (3,4-epoxycyclohexyl)methyl acrylate, 3-epoxycyclo-2-hydroxypropyl (meth) acrylate, etc., as a non-acrylic epoxy group-containing monomer For example: glycidyl butenoate, allyl glycidyl ether, and the like. The epoxy group-containing monomer is preferably an epoxy group-containing (meth) acrylate.

作為(A)丙烯酸系聚合物中之其他單體可列舉(甲基)丙烯酸烷基酯、其他(甲基)丙烯酸衍生物。 Examples of the other monomer in the (A) acrylic polymer include an alkyl (meth)acrylate and another (meth)acrylic acid derivative.

構成(A)丙烯酸系聚合物之單體中,作為上述其他單體較佳為包含(甲基)丙烯酸烷基酯。據此,藉由(甲基)丙烯酸烷基酯之碳數的增減、不同碳數之(甲基)丙烯酸烷基酯的組合,可變得易於調整(A)丙烯酸系聚合物之玻 璃轉移溫度。(甲基)丙烯酸烷基酯較佳為構成(A)丙烯酸系聚合物之全部單體的50質量%以上,更佳為70質量%以上。此外,(甲基)丙烯酸烷基酯較佳為構成(A)丙烯酸系聚合物之全部單體的92質量%以下。 Among the monomers constituting the (A) acrylic polymer, the other monomer is preferably an alkyl (meth)acrylate. Accordingly, it is easy to adjust (A) the glass of the acrylic polymer by the combination of the increase or decrease in the carbon number of the alkyl (meth)acrylate and the alkyl (meth)acrylate having different carbon numbers. Glass transfer temperature. The alkyl (meth)acrylate is preferably 50% by mass or more, and more preferably 70% by mass or more, based on all monomers of the (A) acrylic polymer. Further, the alkyl (meth)acrylate is preferably 92% by mass or less of all the monomers constituting the (A) acrylic polymer.

作為(甲基)丙烯酸烷基酯可列舉(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十二烷酯等,烷基之碳數為1~18之(甲基)丙烯酸烷基酯。 Examples of the alkyl (meth)acrylate include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, and amyl (meth)acrylate. , 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-decyl (meth)acrylate, isodecyl (meth)acrylate, ( Methyl methacrylate, dodecyl (meth)acrylate, etc., alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms.

構成(A)丙烯酸系聚合物之單體,較佳為以構成(A)丙烯酸系聚合物之全部單體的12質量%以下之量來含有上述(甲基)丙烯酸烷基酯中之烷基之碳數為4以上的(甲基)丙烯酸烷基酯。據此,將玻璃轉移溫度調整為-3℃以上的同時,使光澤值更優化變得容易。為了優化光澤值的同時亦提升可靠性,烷基之碳數為4以上的(甲基)丙烯酸烷基酯之上述含量更佳為1~12質量%,進一步較佳為5~12質量%。此外,作為該烷基之碳數為4以上的(甲基)丙烯酸烷基酯較佳為(甲基)丙烯酸丁酯。 The monomer constituting the (A) acrylic polymer preferably contains the alkyl group in the alkyl (meth) acrylate in an amount of 12% by mass or less based on the total of the monomers constituting the (A) acrylic polymer. The alkyl (meth)acrylate having a carbon number of 4 or more. According to this, it is easy to optimize the gloss value while adjusting the glass transition temperature to -3 ° C or higher. In order to optimize the gloss value and improve the reliability, the content of the alkyl (meth)acrylate having 4 or more carbon atoms in the alkyl group is more preferably 1 to 12% by mass, still more preferably 5 to 12% by mass. Further, the alkyl (meth)acrylate having 4 or more carbon atoms in the alkyl group is preferably butyl (meth)acrylate.

此外,構成(A)丙烯酸系聚合物之單體,較佳為含有上述(甲基)丙烯酸烷基酯中之烷基之碳數為3以下的(甲基)丙烯酸烷基酯。藉由含有烷基之碳數為3以下的(甲基)丙烯酸烷基酯,以改善熱安定性等的同時,也變得易於將(A)丙烯酸系聚合物之玻璃轉移溫度調整成 如後述般之-3℃以上。從此等觀點來看,烷基之碳數為3以下的(甲基)丙烯酸烷基酯,較佳為構成(A)丙烯酸系聚合物之全部單體的50質量%以上,更佳為60質量%以上。另外,烷基之碳數為3以下的(甲基)丙烯酸烷基酯,較佳為構成(A)丙烯酸系聚合物之全部單體的90質量%以下。又,作為該烷基之碳數為3以下的(甲基)丙烯酸烷基酯,較佳為(甲基)丙烯酸甲酯或(甲基)丙烯酸乙酯,更佳為(甲基)丙烯酸甲酯。 Further, the monomer constituting the (A) acrylic polymer is preferably an alkyl (meth)acrylate containing an alkyl group in the alkyl (meth)acrylate having a carbon number of 3 or less. By improving the thermal stability and the like by the alkyl (meth)acrylate having an alkyl group having 3 or less carbon atoms, it is also easy to adjust the glass transition temperature of the (A) acrylic polymer to It is -3 ° C or more as described later. From such a viewpoint, the alkyl (meth)acrylate having an alkyl group having 3 or less carbon atoms is preferably 50% by mass or more, more preferably 60% by mass of all the monomers constituting the (A) acrylic polymer. %the above. Further, the alkyl (meth)acrylate having an alkyl group having 3 or less carbon atoms is preferably 90% by mass or less of all the monomers constituting the (A) acrylic polymer. Further, the alkyl (meth)acrylate having 3 or less carbon atoms of the alkyl group is preferably methyl (meth)acrylate or ethyl (meth)acrylate, more preferably (meth)acrylic acid. ester.

再者,構成(A)丙烯酸系聚合物之單體,較佳為包含含有羥基(甲基)丙烯酸酯作為其他的(甲基)丙烯酸衍生物。若藉由含有羥基(甲基)丙烯酸酯,將羥基導入丙烯酸系共聚物,則對於半導體晶片之密著性、黏著特性之控制變得容易。作為含有羥基(甲基)丙烯酸酯可列舉(甲基)丙烯酸羥甲酯、(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯等。 Further, the monomer constituting the (A) acrylic polymer preferably contains a hydroxyl group (meth) acrylate as another (meth)acrylic acid derivative. When the hydroxyl group is introduced into the acrylic copolymer by containing a hydroxyl group (meth) acrylate, it is easy to control the adhesion and adhesion characteristics of the semiconductor wafer. Examples of the hydroxyl group-containing (meth) acrylate include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, and 2-hydroxypropyl (meth)acrylate.

含有羥基(甲基)丙烯酸酯,較佳為構成(A)丙烯酸系聚合物之全部單體的1~30質量%,更佳為5~25質量%,進一步較佳為10~20質量%。 The hydroxyl group-containing (meth) acrylate is preferably from 1 to 30% by mass, more preferably from 5 to 25% by mass, even more preferably from 10 to 20% by mass, based on the total of the monomers constituting the (A) acrylic polymer.

又,構成(A)丙烯酸系聚合物之單體中,作為其他單體亦可包含如上述之苯乙烯、乙烯、乙烯醚、醋酸乙烯酯等之非丙烯酸系之不含有環氧基之單體。 Further, the monomer constituting the (A) acrylic polymer may contain, as the other monomer, a non-acrylic epoxy group-free monomer such as styrene, ethylene, vinyl ether or vinyl acetate as described above. .

為了賦予保護膜形成用薄膜可撓性、成膜性,同時易於使後述之光澤值成為20以上,(A)丙烯酸系聚合物之重量平均分子量(Mw)較佳為10,000以上。又,上述重量平均分子量更佳為15,000~1,000,000,進一步較 佳為20,000~500,000。重量平均分子量(Mw)係可根據後述實施例之方法測定。 In order to impart flexibility and film formability to the film for forming a protective film, and to easily make the gloss value to be described later 20 or more, the weight average molecular weight (Mw) of the (A) acrylic polymer is preferably 10,000 or more. Further, the above weight average molecular weight is more preferably from 15,000 to 1,000,000, further Good is 20,000~500,000. The weight average molecular weight (Mw) can be measured according to the method of the examples described later.

本發明中(A)丙烯酸系聚合物,其玻璃轉移溫度(Tg)為-3℃以上者。若玻璃轉移溫度小於-3℃,則無法充分抑制(A)丙烯酸系聚合物之流動性(mobility),變得易於使保護膜因熱履歴而變形,無法充分提升附保護膜之晶片的可靠性。本發明中,(A)丙烯酸系聚合物之玻璃轉移溫度係根據Fox之式所求得之理論值。 In the (A) acrylic polymer of the present invention, the glass transition temperature (Tg) is -3 ° C or higher. When the glass transition temperature is less than -3 ° C, the fluidity of the (A) acrylic polymer cannot be sufficiently suppressed, and the protective film is easily deformed by heat stagnation, and the reliability of the wafer with the protective film cannot be sufficiently improved. . In the present invention, the glass transition temperature of the (A) acrylic polymer is a theoretical value determined according to the formula of Fox.

又,(A)丙烯酸系聚合物之玻璃轉移溫度較佳為6℃以下。藉由使玻璃轉移溫度為6℃以下,可提升後述之光澤值,且可改善印刷識別性。此原因雖未必清楚,但推測是因丙烯酸系聚合物(A)具有適度的流動性,硬化後之保護膜的表面形狀平滑化之故。 Further, the glass transition temperature of the (A) acrylic polymer is preferably 6 ° C or lower. By setting the glass transition temperature to 6 ° C or lower, the gloss value described later can be improved, and the print recognition property can be improved. Although the reason is not necessarily clear, it is presumed that the acrylic polymer (A) has moderate fluidity, and the surface shape of the protective film after curing is smoothed.

保護膜形成用薄膜係利用將含環氧基之單體抑制成少量,以使易於將保護膜中富含(A)成分之相、及富含後述之(B)成分之硬化物之相相分離,而提升附保護膜之晶片的可靠性。其推測係因為即使晶片構裝後歷經溫度變化的情況下,由於柔軟的富含(A)之相緩和因溫度變化之變形所致之應力,故應力所致之保護膜的剝離變得不易產生。此外,熱硬化後之保護膜形成用薄膜(即,保護膜)中之相分離較佳為富含(A)之相形成連續相。據此,可進一步提高上述可靠性提升之效果。 The film for forming a protective film is obtained by suppressing a monomer having an epoxy group to a small amount so that a phase rich in the component (A) in the protective film and a phase rich in a hardened component rich in the component (B) described later are easily obtained. Separate and improve the reliability of the wafer with the protective film. It is presumed that the peeling of the protective film due to stress is less likely to occur because the soft (A)-rich phase relaxes the stress due to the deformation of the temperature even if the temperature changes after the wafer is assembled. . Further, the phase separation in the film for forming a protective film after heat hardening (i.e., the protective film) is preferably such that the phase rich in (A) forms a continuous phase. According to this, the effect of the above reliability improvement can be further improved.

富含(A)之相及富含(B)之硬化物之相,係可藉由例如拉曼散射分光測定,從某相之測定圖表,透過觀察怎樣的物質可成為該相之主成分而進行判別。另外 ,相分離構造之大小為拉曼分光法之分解能以下的情況下,將SPM(掃描型探針顯微鏡)之間歇接觸式(Tapping Mode)測定的硬度作為指標,推測較硬者為富含(B)成分之硬化物之相,較柔軟者為富含(A)成分之相。因此,本發明係可藉由拉曼散射分光測定、SPM觀察來針對硬化保護膜形成用薄膜而得之保護膜,確認是否有形成相分離構造。 The phase rich in (A) phase and the hardened phase rich in (B) can be determined by, for example, Raman scattering spectrometry, from the measurement chart of a certain phase, by observing what kind of substance can become the main component of the phase. Make a judgment. In addition When the size of the phase separation structure is less than the decomposition energy of the Raman spectroscopy, the hardness measured by the Tapping Mode of the SPM (scanning probe microscope) is used as an index, and it is estimated that the harder one is rich (B). The phase of the hardened component of the component is softer and is the phase rich in the component (A). Therefore, in the present invention, it is possible to confirm whether or not a phase separation structure is formed by a protective film obtained by curing a film for forming a protective film by Raman scattering spectrometry or SPM observation.

另外,(A)丙烯酸系聚合物,佔保護膜形成用薄膜之全部質量(以固體含量換算)的比例,一般為10~80質量%,較佳為15~50質量%。 Further, the ratio of the total mass (calculated as solid content) of the (A) acrylic polymer to the film for forming a protective film is generally 10 to 80% by mass, preferably 15 to 50% by mass.

<(B)環氧系硬化性成分> <(B) epoxy-based curable component>

(B)環氧系硬化性成分,係用以將藉由硬化之硬質保護膜形成於半導體晶片上之成分,一般包含環氧系化合物及熱硬化劑。 (B) The epoxy-based curable component is a component for forming a hard protective film formed on a semiconductor wafer, and generally contains an epoxy compound and a thermosetting agent.

保護膜形成用薄膜中,相對於100質量份之(A)丙烯酸系聚合物,(B)環氧系硬化性成分較佳為250質量份以下,更佳為150質量份以下,進一步較佳為100質量份以下。此外,相對於100質量份之(A)丙烯酸系聚合物,(B)環氧系硬化性成分較佳為20質量份以上,更佳為40質量份以上,進一步較佳為60質量份以上。 In the film for forming a protective film, the (B) epoxy-based curable component is preferably 250 parts by mass or less, more preferably 150 parts by mass or less, even more preferably 100 parts by mass of the (A) acrylic polymer. More preferably, it is more preferably 150 parts by mass or less. 100 parts by mass or less. In addition, the (B) epoxy-based curable component is preferably 20 parts by mass or more, more preferably 40 parts by mass or more, and still more preferably 60 parts by mass or more with respect to 100 parts by mass of the (A) acrylic polymer.

藉由將(B)環氧系硬化性成分之含量設定在上述範圍,可得到對於半導體晶片等之被接著體的充分接著性,此外,與後述之支撐薄片之剝離力變得適當,亦可防止將支撐薄片從保護膜形成用薄膜剝離時之剝離不良等。再者,透過將如上述之(B)成分之摻合量限制在既定之 上限值以下之範圍,可易於使富含(A)成分之相成為連續相,可提高半導體晶片之可靠性,另外,亦變得易於提升光澤值。 By setting the content of the (B) epoxy-based curable component in the above range, sufficient adhesion to a member to be bonded such as a semiconductor wafer can be obtained, and the peeling force with a support sheet to be described later can be appropriately obtained. It is possible to prevent peeling failure or the like when the support sheet is peeled off from the film for forming a protective film. Furthermore, by limiting the blending amount of the component (B) as described above to a predetermined In the range below the upper limit value, the phase rich in the component (A) can be easily made into a continuous phase, the reliability of the semiconductor wafer can be improved, and the gloss value can be easily improved.

另外,(B)環氧系硬化性成分,佔保護膜形成用薄膜之全部質量(以固體含量換算)的比例,一般為5~60質量%,較佳為10~40質量%左右。 In addition, the ratio of the (B) epoxy-based curable component to the total mass (calculated as solid content) of the film for forming a protective film is generally from 5 to 60% by mass, preferably from about 10 to 40% by mass.

作為環氧系化合物,可使用先前眾所周知之環氧化合物。具體而言,可列舉聯苯化合物、雙酚A二環氧丙基醚及其氫化物、鄰甲酚酚醛清漆環氧樹脂、二環戊二烯型環氧樹脂、聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、伸苯基骨架型環氧樹脂等分子中具有2官能以上之環氧化合物。該等可以1種單獨使用、或組合2種以上使用。 As the epoxy compound, a previously known epoxy compound can be used. Specific examples thereof include a biphenyl compound, bisphenol A diglycidyl ether and a hydrogenated product thereof, an o-cresol novolac epoxy resin, a dicyclopentadiene type epoxy resin, and a biphenyl type epoxy resin. An epoxy compound having two or more functional groups in a molecule such as a bisphenol A epoxy resin, a bisphenol F epoxy resin, or a phenylene skeleton epoxy resin. These may be used alone or in combination of two or more.

熱硬化劑係作為對環氧化合物之硬化劑而發揮功能。作為較佳的熱硬化劑可列舉1分子中具有2個以上可與環氧基反應之官能基的化合物。作為其之官能基可列舉酚性羥基、醇性羥基、胺基、羧基及酸酐等。此等當中較佳可列舉酚性羥基、胺基、酸酐等,進一步較佳可列舉酚性羥基、胺基。 The thermosetting agent functions as a curing agent for an epoxy compound. Preferred examples of the thermosetting agent include compounds having two or more functional groups reactive with an epoxy group in one molecule. Examples of the functional group thereof include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, and an acid anhydride. Among these, a phenolic hydroxyl group, an amine group, an acid anhydride, etc. are preferable, and a phenolic hydroxyl group and an amine group are further preferable.

作為具有酚性羥基之酚系硬化劑的具體的例子,可列舉多官能系酚樹脂、聯苯酚、酚醛清漆型酚樹脂、雙環戊二烯系酚樹脂、賽洛克(Xylok)型酚樹脂、芳烷基酚樹脂。作為具有胺基之胺系硬化劑的具體的例子,可列舉二氰二胺(Dicyandiamide)。該等可以1種單獨使用、或組合2種以上使用。 Specific examples of the phenolic curing agent having a phenolic hydroxyl group include a polyfunctional phenol resin, a biphenol, a novolak type phenol resin, a dicyclopentadiene type phenol resin, a Xylok type phenol resin, and a aryl group. Alkyl phenol resin. Specific examples of the amine-based curing agent having an amine group include dicyandiamide. These may be used alone or in combination of two or more.

又,相對於100質量份之環氧化合物,熱硬化劑之含量較佳為0.1~100質量份,更佳為0.5~50質量份,進一步較佳為1~20質量份。藉由將熱硬化劑之含量設定在上述下限值以上,(B)成分硬化而變得易於得到與被接著體之接著性。又,藉由設定成上述上限值以下,可抑制保護膜形成用薄膜之吸濕率,且變得容易改善半導體裝置之可靠性。 Further, the content of the thermosetting agent is preferably from 0.1 to 100 parts by mass, more preferably from 0.5 to 50 parts by mass, even more preferably from 1 to 20 parts by mass, per 100 parts by mass of the epoxy compound. When the content of the thermal curing agent is set to be equal to or higher than the above lower limit value, the component (B) is cured, and the adhesion to the adherend is easily obtained. In addition, by setting the amount to be equal to or lower than the above upper limit, the moisture absorption rate of the film for forming a protective film can be suppressed, and the reliability of the semiconductor device can be easily improved.

<(C)填料> <(C) Filler>

(C)填料係賦予保護膜耐濕性、尺寸安定性等之成分,具體而言可列舉無機填料等。又,藉由於保護膜上施以雷射標記(藉由雷射光削除保護膜表面以進行印刷之方法),藉由雷射光削除之部分(印刷部分),由於(C)填料露出而擴散反射光,提升與非印刷部分之對比而變得可以辨識。 (C) The filler is a component which imparts moisture resistance, dimensional stability, and the like to the protective film, and specific examples thereof include an inorganic filler. Further, by applying a laser mark on the protective film (the method of removing the surface of the protective film by laser light for printing), the portion (printing portion) which is removed by the laser light diffuses the reflected light due to (C) the filler is exposed. , the comparison with the non-printed part becomes identifiable.

作為較佳的無機填料,可列舉二氧化矽、氧化鋁、滑石、碳酸鈣、氧化鈦、氧化鐵、碳化矽、氮化硼等之粉末、球形化彼等而成之珠粒、單晶纖維及玻璃纖維等。此等當中特佳為二氧化矽填料及氧化鋁填料。又,上述無機填料可單獨使用或混合2種以上使用。 Examples of preferred inorganic fillers include powders such as cerium oxide, aluminum oxide, talc, calcium carbonate, titanium oxide, iron oxide, cerium carbide, and boron nitride, beads which are spheroidized, and single crystal fibers. And glass fiber and so on. Among these, it is particularly preferred to be a cerium oxide filler and an alumina filler. Further, the above inorganic fillers may be used singly or in combination of two or more kinds.

此外,填料之平均粒徑,並沒有特別限定,但較佳為0.1~20μm。如果為0.1μm以上時,將保護膜形成用組成物於支撐薄片上塗布乾燥,而得到保護膜形成用薄膜等情況下,保護膜形成用組成物變得有適合於塗布的性質之傾向。又,如果為20μm以下時,變得易於更加提升光澤值。 Further, the average particle diameter of the filler is not particularly limited, but is preferably 0.1 to 20 μm. When the composition for forming a protective film is applied and dried on a support sheet to obtain a film for forming a protective film or the like, the composition for forming a protective film tends to have a property suitable for coating. Moreover, when it is 20 micrometer or less, it becomes easy to raise a gloss value further.

另外,從此等觀點來看,填料之平均粒徑更佳為0.2~10μm,進一步較佳為0.3~6μm。 Further, from these viewpoints, the average particle diameter of the filler is more preferably 0.2 to 10 μm, still more preferably 0.3 to 6 μm.

另外,平均粒徑係可藉由使用動態光散射法(Dynamic light scattering)之粒度分布計測定者。作為粒度分布計可列舉例如:日機裝公司製之Nanotrac150等。 Further, the average particle diameter can be measured by a particle size distribution meter using Dynamic Light Scattering. Examples of the particle size distribution meter include Nanotrac 150 manufactured by Nikkiso Co., Ltd., and the like.

保護膜形成用薄膜中(C)填料之含量,佔保護膜形成用薄膜之全部質量(以固體含量換算)的比例較佳為10質量%以上,更佳為30質量%以上,進一步較佳為50質量%以上。又,相對於保護膜形成用薄膜之全部質量,(C)填料之含量較佳為80質量%以下,更佳為70質量%以下,進一步較佳為63質量%以下。藉由將(C)填料之含量設定在此等範圍,變得易於發揮上述填料之效果。又,藉由將(C)填料之含量設定在50質量%以上,可提升經雷射標記之印刷部與非印刷部之對比,使印刷之識別性變得良好。此外,藉由設定在上述上限值以下,變得易於提升光澤值。 The content of the (C) filler in the film for forming a protective film is preferably 10% by mass or more, more preferably 30% by mass or more, and more preferably 30% by mass or more, more preferably 30% by mass or more. 50% by mass or more. In addition, the content of the (C) filler is preferably 80% by mass or less, more preferably 70% by mass or less, and still more preferably 63% by mass or less based on the total mass of the film for forming a protective film. By setting the content of the (C) filler in these ranges, it becomes easy to exert the effect of the above filler. Further, by setting the content of the (C) filler to 50% by mass or more, the contrast between the laser-printed portion and the non-printing portion can be improved, and the visibility of printing can be improved. Further, by setting it below the above upper limit value, it becomes easy to increase the gloss value.

關於本發明之保護膜形成用薄膜,除了以上說明的(A)~(C)成分外,亦可含有以下(D)著色劑、(E)偶合劑、(F)硬化促進劑、及(G)其他的添加劑中之任意1個以上。 The film for forming a protective film of the present invention may contain the following (D) coloring agent, (E) coupling agent, (F) curing accelerator, and (G) in addition to the components (A) to (C) described above. Any one or more of the other additives.

<(D)著色劑> <(D) colorant>

保護膜形成用薄膜,在將半導體晶片安裝至機器時,為了可遮蔽由周圍裝置所產生的紅外線等,以防止半導體晶片之錯誤作動,較佳為含有(D)著色劑。又,於硬化保護膜形成用薄膜而得到的保護膜上,印刷製品編號 、記號等時之文字之識別性,可藉由含有(D)著色劑來提升。即,於形成半導體晶片之保護膜的背面,藉由一般雷射標記法印刷商品編號等,藉由使保護膜含有(D)著色劑,而使印刷部分與非印刷部分之對比差變大,而提升識別性。 The film for forming a protective film preferably contains (D) a colorant when the semiconductor wafer is mounted on a device so as to shield infrared rays generated by the surrounding device and to prevent erroneous operation of the semiconductor wafer. Further, on the protective film obtained by curing the film for forming a protective film, the printed article number The recognizability of the characters such as marks and symbols can be improved by containing (D) a coloring agent. That is, in the back surface of the protective film on which the semiconductor wafer is formed, the product number or the like is printed by a general laser marking method, and the contrast of the printed portion and the non-printed portion is made larger by including the protective film (D) coloring agent. And enhance recognition.

作為(D)著色劑,可使用有機或無機之顏料或染料。作為染料亦可使用酸性染料、反應染料、直接染料、分散染料、陽離子染料等任一種之染料。此外,顏料亦沒有特別限制,可從周知的顏料中適當地選擇使用。 As the (D) colorant, an organic or inorganic pigment or dye can be used. As the dye, a dye such as an acid dye, a reactive dye, a direct dye, a disperse dye, or a cationic dye can also be used. Further, the pigment is not particularly limited, and can be appropriately selected from known pigments.

此等當中,較佳為黑色顏料,其係電磁波、紅外線之遮蔽性良好,且更可提升由雷射標記法之識別性。作為黑色顏料可使用碳黑、氧化鐵、二氧化錳、苯胺黑、活性碳等,但不限定於此等。從提高半導體晶片之可靠性的觀點來看,特佳為碳黑。(D)著色劑可單獨使用1種,亦可組合2種以上使用。 Among these, a black pigment is preferred, which is excellent in shielding properties by electromagnetic waves and infrared rays, and can further enhance the recognition by the laser marking method. As the black pigment, carbon black, iron oxide, manganese dioxide, aniline black, activated carbon or the like can be used, but it is not limited thereto. From the viewpoint of improving the reliability of the semiconductor wafer, it is particularly preferable to be carbon black. (D) The coloring agent may be used alone or in combination of two or more.

(D)著色劑之摻合量,佔保護膜形成用薄膜之全部質量(以固體含量換算)的比例較佳為0.01~25質量%,更佳為0.03~15質量%。 (D) The blending amount of the coloring agent is preferably from 0.01 to 25% by mass, and more preferably from 0.03 to 15% by mass, based on the total mass (calculated as solid content) of the film for forming a protective film.

<(E)偶合劑> <(E) coupling agent>

保護膜形成用薄膜中亦可摻合(E)偶合劑。 The (E) coupling agent may also be blended in the film for forming a protective film.

作為(E)偶合劑較佳為具有甲氧基、乙氧基等烷氧基之矽烷偶合劑。此外,作為(E)偶合劑較佳係使用具有與(A)丙烯酸系聚合物、(B)環氧系硬化性成分等所具有之官能基反應,且具有烷氧基以外之反應性官能基的化合 物。作為反應性官能基可列舉環氧丙氧基(glycidoxy)、環氧丙氧基以外之環氧基、胺基、(甲基)丙烯醯氧基、(甲基)丙烯醯氧基以外之乙烯基、巰基等。此等當中較佳為環氧丙氧基、環氧基。 The (E) coupling agent is preferably a decane coupling agent having an alkoxy group such as a methoxy group or an ethoxy group. Further, it is preferable to use a functional group having a functional group such as (A) an acrylic polymer or (B) an epoxy-based curable component, and having a reactive functional group other than an alkoxy group, as the (E) coupling agent. Combination Things. Examples of the reactive functional group include an epoxy group other than a glycidoxy group, a glycidoxy group, an amine group, a (meth)acryloxy group, and a (meth)acryloxy group. Base, base, etc. Among them, preferred are a glycidoxy group and an epoxy group.

作為矽烷偶合劑亦可使用分子量小於300的低分子量矽烷偶合劑,也可使用分子量300以上之寡聚物型的矽烷偶合劑,亦可併用彼等。 As the decane coupling agent, a low molecular weight decane coupling agent having a molecular weight of less than 300 may be used, or an oligomer type decane coupling agent having a molecular weight of 300 or more may be used, or they may be used in combination.

作為低分子量矽烷偶合劑,具體而言可列舉γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基三乙氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷、β-(3,4-環氧基環己基)乙基三甲氧基矽烷、γ-(甲基丙烯醯基丙基)三甲氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷、γ-脲基丙基三乙氧基矽烷、N-6-(胺基乙基)-γ-胺基丙基甲基二乙氧基矽烷、γ-巰基丙基三乙氧基矽烷、γ-巰基丙基甲基二甲氧基矽烷、乙烯基三乙醯氧基矽烷等。 Specific examples of the low molecular weight decane coupling agent include γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropyltriethoxydecane, and γ-glycidoxypropyl group. Methyldiethoxydecane, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-(methacryloylpropyl)trimethoxynonane, N-phenyl-γ -Aminopropyltrimethoxydecane, γ-ureidopropyltriethoxydecane, N-6-(aminoethyl)-γ-aminopropylmethyldiethoxydecane, γ-mercapto Propyltriethoxydecane, γ-mercaptopropylmethyldimethoxydecane, vinyltriethoxydecane, and the like.

寡聚物型之矽烷偶合劑較佳為具有矽氧烷骨架之有機聚矽氧烷,同時具有直接鍵結於矽原子之烷氧基者。 The oligomer type decane coupling agent is preferably an organopolyoxane having a fluorene skeleton and having an alkoxy group directly bonded to a ruthenium atom.

(E)偶合劑之含量,佔保護膜形成用薄膜之全部質量(以固體含量換算)的比例較佳為0.01~10.0質量%,更佳為0.1~3.0質量%。 The content of the (E) coupling agent is preferably from 0.01 to 10.0% by mass, more preferably from 0.1 to 3.0% by mass, based on the total mass (calculated as solid content) of the film for forming a protective film.

<(F)硬化促進劑> <(F) hardening accelerator>

為了調整保護膜形成層之硬化速度,保護膜形成用薄膜亦可含有(F)硬化促進劑。 In order to adjust the curing rate of the protective film forming layer, the film for forming a protective film may further contain (F) a curing accelerator.

作為較佳之硬化促進劑,可列舉三伸乙二胺、二甲基苄胺、三乙醇胺、二甲胺乙醇、參(二甲基胺甲基)酚 等之3級胺類;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑等之咪唑類;三丁基膦、二苯基膦、三苯基膦等之有機膦類;四苯基鏻四苯基硼酸鹽、三苯基膦四苯基硼酸鹽等之四苯基硼鹽等。此等可1種單獨使用,或2種以上混合使用。 Preferred examples of the hardening accelerator include triethylene glycol diamine, dimethylbenzylamine, triethanolamine, dimethylamine ethanol, and dimethyl (dimethylaminomethyl) phenol. Grade 3 amines; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dimethylolimidazole, 2-phenyl- An imidazole such as 4-methyl-5-hydroxymethylimidazole; an organic phosphine such as tributylphosphine, diphenylphosphine or triphenylphosphine; tetraphenylphosphonium tetraphenylborate, triphenylphosphine A tetraphenylboron salt such as tetraphenylborate. These may be used alone or in combination of two or more.

相對於100質量份之(B)環氧系硬化性成分,較佳為含有0.01~10質量份之(F)硬化促進劑,進一步較佳為含有0.1~5質量份之量。藉由含有上述範圍量之(F)硬化促進劑,保護膜形成用薄膜即使在高溫度高濕度下暴露亦具有優異的接著特性,即使暴露於嚴苛的條件的情況下,亦可達成高可靠性。 It is preferable to contain 0.01 to 10 parts by mass of the (F) hardening accelerator, and more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the (B) epoxy-based curable component. By containing the above-mentioned range of (F) hardening accelerator, the film for forming a protective film has excellent adhesion characteristics even when exposed to high temperature and high humidity, and high reliability can be achieved even under severe conditions. Sex.

<(G)其他添加劑> <(G) Other Additives>

作為亦可含於保護膜形成用薄膜中之其他添加劑,可列舉交聯劑、相溶劑、調平劑、塑化劑、抗靜電劑、抗氧化劑、離子捕獲劑、吸收劑(gettering agent)、鏈轉移劑、能量線聚合性化合物、光聚合起始劑等,但並不是特別限定於此等。保護膜形成用薄膜,可藉由摻合例如相溶劑,適當調整富含(A)成分之相與富含(B)成分之硬化物之相之相溶性,而變得可設計適當的相分離構造。 Examples of other additives which may be contained in the film for forming a protective film include a crosslinking agent, a phase solvent, a leveling agent, a plasticizer, an antistatic agent, an antioxidant, an ion trapping agent, a gettering agent, and the like. The chain transfer agent, the energy ray polymerizable compound, the photopolymerization initiator, and the like are not particularly limited thereto. The film for forming a protective film can be appropriately adjusted in phase by blending, for example, a phase solvent, and appropriately adjusting the compatibility of the phase rich in the component (A) with the phase of the cured product rich in the component (B). structure.

<光澤值> <gloss value>

保護膜形成用薄膜係藉由具有上述組合硬化而得之保護膜的至少一面之光澤值為20以上者,該光澤值係藉由JIS Z 8741測定。就本發明而言,其係藉由將與光澤值 為20以上之面相反測的面貼合於晶圓而硬化,而使保護膜之由雷射標記的被印刷面具有光澤值20以上。因此,本發明中印刷部與非印刷部之對比提高,印刷部分之識別性變佳。 The film for forming a protective film has a gloss value of at least 20 on at least one surface of the protective film obtained by the above-described combination curing, and the gloss value is measured by JIS Z 8741. For the purposes of the present invention, it The surface opposite to the surface of 20 or more is bonded to the wafer to be hardened, and the printed surface of the protective film by the laser mark has a gloss value of 20 or more. Therefore, in the present invention, the contrast between the printing portion and the non-printing portion is improved, and the visibility of the printed portion is improved.

由於更提高對比,而提升文字之識別性,故上述光澤值較佳為27以上。另外,光澤值並沒有特別限定但較佳為45以下。 Since the contrast is improved and the recognition of the characters is improved, the gloss value is preferably 27 or more. Further, the gloss value is not particularly limited, but is preferably 45 or less.

另外,光澤值並未特別限定,根據例如:含環氧基之單體、烷基之碳數為4以上的(甲基)丙烯酸烷基酯等之量的調整、相對於(A)成分之(B)成分之含量的調整、填料之種類的選擇、填料之含量或粒徑之調整、或其他添加劑之添加,而可適當調整。 In addition, the gloss value is not particularly limited, and is adjusted according to, for example, the amount of the epoxy group-containing monomer or the alkyl group having 4 or more carbon atoms, and the component (A). The adjustment of the content of the component (B), the selection of the type of the filler, the adjustment of the content of the filler or the particle diameter, or the addition of other additives may be appropriately adjusted.

保護膜形成用薄膜之厚度並沒有特別限定,較佳為3~300μm,更佳為5~250μm,進一步較佳為7~200μm。 The thickness of the film for forming a protective film is not particularly limited, but is preferably 3 to 300 μm, more preferably 5 to 250 μm, still more preferably 7 to 200 μm.

[保護膜形成用複合薄片] [Composite sheet for forming a protective film]

一般而言,本發明之保護膜形成用薄膜係可剝離地形成於支撐薄片上,作為積層體之保護膜形成用複合薄片而使用。保護膜形成用薄膜係可作成與支撐薄片相同形狀。又,保護膜形成用複合薄片亦可採用所謂的事先成形構成,其係將保護膜形成用薄膜製作成可完全包含與晶圓略呈相同之形狀或晶圓之形狀的形狀者,並將保護膜形成用薄膜積層於比保護膜形成用薄膜大之尺寸的支撐薄片上。 In general, the film for forming a protective film of the present invention is formed on a support sheet in a peelable manner, and is used as a composite sheet for forming a protective film of a laminate. The film for forming a protective film can be formed in the same shape as the support sheet. Further, the composite sheet for forming a protective film may have a so-called pre-formed structure in which a film for forming a protective film is formed into a shape which completely includes a shape similar to a wafer or a shape of a wafer, and is protected. The film for film formation is laminated on a support sheet having a size larger than that of the film for forming a protective film.

支撐薄片係支撐保護膜形成用薄膜者,可使用例如:聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄 膜、聚甲基戊烯薄膜、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚對苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚對苯二甲酸丁二酯薄膜、聚胺甲酸酯薄膜、乙烯乙酸乙烯酯共聚物薄膜、離子聚合物樹脂薄膜、乙烯/(甲基)丙烯酸共聚物薄膜、乙烯/(甲基)丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳酸酯薄膜、聚醯亞胺薄膜、氟樹脂薄膜等之薄膜。此外,亦可使用該等之交聯薄膜。再者,亦可為選自該等之2個以上之積層薄膜。另外,亦可使用經將該等著色而成之薄膜。 The support sheet is used to support a film for forming a protective film, and for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film can be used. Membrane, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, poly A urethane film, an ethylene vinyl acetate copolymer film, an ionic polymer resin film, an ethylene/(meth)acrylic copolymer film, an ethylene/(meth)acrylate copolymer film, a polystyrene film, a polycarbonate A film of an ester film, a polyimide film, a fluororesin film or the like. In addition, such crosslinked films can also be used. Further, it may be a laminated film selected from two or more of these. Further, a film obtained by coloring these may also be used.

支撐薄片之形成保護膜形成用薄膜側的面,亦可適當地被施以剝離處理。作為剝離處理所使用的剝離劑可列舉例如:醇酸系、聚矽氧系、氟系、不飽和聚酯系、聚烯烴系、蠟系等;因醇酸系、聚矽氧系、氟系之剝離劑具有耐熱性,故較佳。 The surface of the support sheet on the side of the film for forming a protective film may be appropriately subjected to a release treatment. Examples of the release agent to be used in the release treatment include an alkyd type, a polyoxymethylene type, a fluorine type, an unsaturated polyester type, a polyolefin type, a wax type, and the like; and an alkyd type, a polyfluorene type, and a fluorine type. The release agent is preferred because it has heat resistance.

又,保護膜形成用複合薄片中,保護膜形成用薄膜之設有支撐薄片側的面之相反面上,亦可貼合輕剝離性之剝離薄片,藉由該剝離薄片保護保護膜形成用薄膜。 Further, in the composite sheet for forming a protective film, a peeling sheet having a light release property may be bonded to the opposite surface of the film for forming a protective film on the side of the support sheet, and the film for forming a protective film may be protected by the release sheet. .

保護膜形成用薄膜係將保護膜形成用組成物於支撐薄片上塗布乾燥而得,該保護膜形成用組成物係於適當的溶劑中或無溶劑下,以適當的比例將上述各成分混合而成。此外,所謂的支撐薄片亦可於其他工程薄膜上塗布保護膜形成用組成物、乾燥、成膜,並適當地轉印到支撐薄片等而形成。工程薄膜亦可於其後不去除,而作為上述剝離薄片使用。 The film for forming a protective film is obtained by coating and drying a composition for forming a protective film on a support sheet, and the composition for forming a protective film is mixed in an appropriate solvent or in a solvent-free manner at an appropriate ratio. to make. Further, the support sheet may be formed by applying a composition for forming a protective film to another engineering film, drying, forming a film, and appropriately transferring it to a support sheet or the like. The engineered film can also be used as the above-mentioned release sheet without being removed thereafter.

此外,亦可藉由濕式積層、乾式積層、熱熔 融積層、熔融擠壓積層、共擠壓加工等進行薄膜之積層,以調整支撐薄片之表面張力。即,亦可製造一積層體作為支撐薄片,該積層體係將至少一面之表面張力在上述支撐薄片之與保護膜形成用薄膜相接觸面者之較佳範圍內的薄膜與其他薄膜積層而成,以使該面成為與保護膜形成用薄膜相接觸面。 In addition, it can also be formed by wet lamination, dry lamination, and hot melt. The film is laminated by a melt layer, a melt-extruded laminate, a co-extrusion process, etc. to adjust the surface tension of the support sheet. In other words, a laminate may be produced as a support sheet which is formed by laminating a film having at least one surface tension in a preferred range of the surface of the support sheet which is in contact with the film for forming a protective film, and other films. This surface is brought into contact with the film for forming a protective film.

此外,亦可使用於上述薄膜上形成黏著劑層而成之黏著薄片作為支撐薄片。此情況下,保護膜形成用薄膜係積層於設置在支撐薄片上之黏著劑層上。藉由作成此種構成,特別是於保護膜形成用複合薄片上,將每一保護膜形成用薄膜或保護膜上之晶圓切片成晶片的情況下,由於晶圓、晶片之固定性能上變得優異,故較佳。藉由將黏著劑層作成再剝離性黏著劑層,由於將保護膜形成用薄膜或保護膜自支撐薄片分離變得容易,故較佳。再剝離性黏著劑層,較佳係使用具有可將保護膜形成用薄膜剝離程度之黏著力的弱黏著性者,亦可使用藉由能量線照射而降低黏著力之能量線硬化性者。具體而言,再剝離性黏著劑層係可藉由以往眾所周知之各種黏著劑(例如:橡膠系、丙烯酸系、聚矽氧系、胺基甲酸酯系、乙烯醚系等之泛用黏著劑、具有表面凹凸之黏著劑、能量線硬化型黏著劑、含有熱膨脹成分之黏著劑等)形成。 Further, an adhesive sheet formed by forming an adhesive layer on the above film may be used as the support sheet. In this case, the film for forming a protective film is laminated on the adhesive layer provided on the support sheet. In such a configuration, in particular, when the film for forming a protective film or the wafer on the protective film is sliced into a wafer on a composite sheet for forming a protective film, the fixing property of the wafer and the wafer is changed. It is excellent, so it is better. By forming the adhesive layer as a re-adhesive adhesive layer, it is preferable to separate the film for forming a protective film or the protective film from the support sheet. The re-adhesive adhesive layer is preferably one which has a weak adhesiveness which can adhere to the film for forming a protective film, and an energy ray hardenability which reduces the adhesive force by energy ray irradiation. Specifically, the re-adhesive adhesive layer can be obtained by various conventionally known adhesives (for example, rubber-based, acrylic-based, polyfluorene-based, urethane-based, vinyl ether-based, and the like). It is formed by an adhesive having surface irregularities, an energy ray-curable adhesive, an adhesive containing a thermal expansion component, and the like.

於使用能量線硬化性之再剝離性黏著劑層的情況下,保護膜形成用複合薄片作成事先成形構成時,於保護膜形成用薄膜所積層之區域進行預先能量線照射 ,先降低黏著性,另一方面其他區域則不進行能量線照射,例如對治具之接著作為目的,較佳為一直維持高黏著力。以僅其他區域不進行能量線照射的方式執行,例如可於與支撐薄片之其他區域相對應的區域上藉由印刷等設置能量線遮蔽層,亦可從支撐薄片側進行能量線照射。又,為了得到同樣的效果,亦可為下述構成:於黏著薄片中黏著劑層上之保護膜形成用薄膜所積層的區域,進一步積層與保護膜形成用薄膜略為相同形狀之再剝離性黏著劑層而成之構成。作為再剝離性黏著劑用薄膜可使用與上述相同者。 When the energy ray-curable re-peelable adhesive layer is used, when the composite sheet for forming a protective film is formed into a pre-formed structure, the energy ray is irradiated in a region where the film for forming a protective film is laminated. First, the adhesion is lowered first, and on the other hand, the energy line is not irradiated in other areas. For example, for the purpose of the attachment of the jig, it is preferable to maintain high adhesion at all times. It is performed in such a manner that only the other regions are not irradiated with the energy ray, and for example, the energy ray shielding layer may be provided by printing or the like on the region corresponding to the other region of the supporting sheet, or the energy ray may be irradiated from the supporting sheet side. Further, in order to obtain the same effect, a region in which the film for forming a protective film on the adhesive layer is laminated on the adhesive sheet is further laminated, and a re-peelable adhesive having a shape similar to that of the film for forming a protective film is further laminated. The composition of the agent layer. As the film for a re-peelable adhesive, the same as described above can be used.

當保護膜形成用薄膜非採事先成形構成的情況下,於保護膜形成用薄膜之表面(與被接著體接觸之面)之外周圍部分,為了固定環狀框架等之其他治具,亦可另外設置接著劑層、雙面膠帶。當保護膜形成用薄膜採事先成形構成的情況下,支撐薄片之外周圍部分中保護膜形成用薄膜之未積層的區域上,為了固定環狀框架等之其他治具,亦可另外設置接著劑層、雙面膠帶。 When the film for forming a protective film is not formed in advance, the peripheral portion of the surface of the film for forming a protective film (the surface in contact with the adherend) may be fixed to other jigs such as a ring frame. In addition, an adhesive layer and a double-sided tape are provided. When the film for forming a protective film is formed by molding in advance, an adhesive layer may be additionally provided in order to fix other jigs such as a ring frame in a region where the film for protective film formation in the peripheral portion of the support sheet is not laminated. Layer, double-sided tape.

[保護膜形成用薄膜之使用方法] [How to use the film for forming a protective film]

保護膜形成用薄膜係被貼附於半導體晶圓、半導體晶片等之被接著體上,其後被熱硬化,而作為保護膜使用。於此,在保護膜形成用薄膜作為保護膜形成用複合薄片而被貼附於被接著體的情況下,首先,當以剝離薄片保護的情況下,剝離掉剝離薄片,接著,於保護膜形成用薄膜與支持薄膜之積層體被貼附於被接著體上之後,將支撐薄片從保護膜形成用薄膜剝離。 The film for forming a protective film is attached to a member to be bonded such as a semiconductor wafer or a semiconductor wafer, and then thermally cured to be used as a protective film. In the case where the film for forming a protective film is attached to the adherend as a composite sheet for forming a protective film, first, when the film is protected by the release sheet, the release sheet is peeled off, and then formed on the protective film. After the laminate of the film and the support film is attached to the adherend, the support sheet is peeled off from the film for forming a protective film.

以下,針對保護膜形成用薄膜之使用方法,說明保護膜形成用薄膜係被使用在半導體晶片之背面保護用途上而製造附保護膜之晶片之實例,但不限於以下所示之實例。 In the following, an example in which the film for forming a protective film is used for the back surface protection of a semiconductor wafer to produce a film with a protective film will be described. However, the present invention is not limited to the examples shown below.

首先,本方法係將上述保護膜形成用薄膜積層於半導體晶圓之背面。例如:在使用保護膜形成用複合薄片的情況下,將保護膜形成用薄膜與基材薄片之積層體貼附於半導體晶圓之背面。其後,自保護膜形成用薄膜剝離支撐薄片後,熱硬化積層於半導體晶圓上之保護膜形成用薄膜,於晶圓之整面上形成保護膜。 First, in the present method, the film for forming a protective film is laminated on the back surface of a semiconductor wafer. For example, when a composite sheet for forming a protective film is used, a laminate of a film for forming a protective film and a substrate sheet is attached to the back surface of the semiconductor wafer. Thereafter, the support sheet is peeled off from the film for forming a protective film, and then a film for forming a protective film laminated on the semiconductor wafer is thermally cured to form a protective film on the entire surface of the wafer.

另外,半導體晶圓可為矽晶圓,又亦可為鎵/砷等之化合物半導體晶圓。又,半導體晶圓,係在其表面形成回路的同時,對其背面進行適當研磨等,以形成為厚度50~500μm左右者。 In addition, the semiconductor wafer may be a germanium wafer or a compound semiconductor wafer such as gallium/arsenic. Further, the semiconductor wafer is formed by forming a circuit on its surface and appropriately polishing the back surface thereof to form a thickness of about 50 to 500 μm.

接著,針對半導體晶圓與保護膜的積層體,就形成於晶圓表面的回路進行逐一切割(dicing)。切割係以同時切斷晶圓與保護膜的方式進行,藉由切割將半導體晶圓與保護膜之積層體分割成複數之晶片。另外,晶圓之切割係藉由使用切割薄片之一般方法進行。接著,藉由夾具等之泛用手段將經切割之晶片拾起,得到背面具有保護膜之半導體晶片(附保護膜之晶片)。 Next, the circuit formed on the surface of the wafer is diced one by one for the laminated body of the semiconductor wafer and the protective film. The dicing is performed by simultaneously cutting the wafer and the protective film, and dividing the laminated body of the semiconductor wafer and the protective film into a plurality of wafers by dicing. In addition, the cutting of the wafer is performed by a general method of using a diced sheet. Next, the cut wafer is picked up by a general means such as a jig, and a semiconductor wafer (a wafer with a protective film) having a protective film on the back surface is obtained.

另外,半導體晶片之製造方法,並不限於以上之實例,亦可為例如:支撐薄片之剝離可於保護膜之熱硬化後進行,也可於切割後進行。此外,支撐薄片之剝離,於切割後進行的情況下,支撐薄片可發揮作為切 割薄片之作用。還有,保護膜形成用薄膜之熱硬化,亦可於切割後進行。 Further, the method of manufacturing the semiconductor wafer is not limited to the above examples, and for example, the peeling of the support sheet may be performed after the heat curing of the protective film, or may be performed after the cutting. In addition, the peeling of the support sheet, in the case of performing the cutting, the support sheet can be used as a cut The role of cutting thin slices. Further, the film for forming a protective film may be thermally cured or may be subjected to dicing.

[附保護膜之晶片] [wafer with protective film]

本發明之附保護膜之晶片,係可藉由例如上述製造方法獲得,其係具備半導體晶片及積層於該半導體晶片之背面之保護膜;該保護膜係將上述保護膜形成用薄膜硬化而形成,其係保護晶片背面者。保護膜之與半導體晶片側的面相反之面,藉由JIS Z 8741測定之光澤值為20以上。 The protective film-attached wafer of the present invention can be obtained, for example, by the above-described production method, comprising a semiconductor wafer and a protective film laminated on the back surface of the semiconductor wafer; and the protective film is formed by curing the protective film forming film. It protects the back of the wafer. The surface of the protective film opposite to the surface on the side of the semiconductor wafer was measured to have a gloss value of 20 or more as measured by JIS Z 8741.

藉由以倒裝方式將附保護膜之晶片構裝於基板等上,可製造半導體裝置。又,附保護膜之晶片,可藉由接著於晶片襯墊(die pad)部或別的半導體晶片等之其他構件上(晶片搭載部上),來製造半導體裝置。 A semiconductor device can be manufactured by flip-chip bonding a wafer with a protective film onto a substrate or the like. Further, the wafer with the protective film can be manufactured by following a die pad portion or another member such as a semiconductor wafer (on the wafer mounting portion).

[實施例] [Examples]

以下,基於實施例進一步詳細說明本發明,然而本發明不因此等實例而受到限制。 Hereinafter, the present invention will be described in further detail based on examples, but the present invention is not limited by the examples.

本發明中之測定方法、評估方法如下。 The measurement method and evaluation method in the present invention are as follows.

(1)重量平均分子量(Mw) (1) Weight average molecular weight (Mw)

藉由凝膠滲透層析法(GPC)法,測定標準聚苯乙烯換算之重量平均分子量Mw。 The weight average molecular weight Mw in terms of standard polystyrene was measured by a gel permeation chromatography (GPC) method.

測定裝置:將高速管柱「TSK guard column HXL-H」、「TSK Gel GMHXL」、「TSK Gel G2000 HXL」(以上,全部為東曹公司製)依此順序連結於東曹公司製之高速GPC裝置「HLC-8120GPC」上,進行測定。 Measuring device: The high-speed column "TSK guard column H XL -H", "TSK Gel GMH XL ", and "TSK Gel G2000 H XL " (all of which are manufactured by Tosoh Corporation) are connected in this order to Tosoh Corporation. The high-speed GPC device "HLC-8120GPC" was measured.

管柱溫度:40℃、送液速度:1.0mL/分鐘、偵檢器 :差示折射率計 Column temperature: 40 ° C, liquid feeding speed: 1.0 mL / min, detector : Differential Refractometer

(2)光澤值 (2) Gloss value

使用Tape Mounter(LINTEC股份有限公司製,Adwill RAD-3600 F/12),將經剝離掉剝離薄片之保護膜形成用複合薄片的保護膜形成用薄膜,一邊加熱至70℃,一邊貼附於經#2000研磨之矽晶圓(200mm直徑、厚度280μm)的研磨面上。接著,剝離支撐薄片後,藉由在130℃下進行2小時加熱,硬化保護膜形成用薄膜,於矽晶圓上形成保護膜。以下述測定裝置及測定條件,測定保護膜表面之60度的鏡面光澤度,作為光澤值。 The film for forming a protective film of the composite sheet for forming a protective film which has been peeled off from the release sheet is peeled off to 70° C., and is attached to the warp by using Tape Mounter (Adwill RAD-3600 F/12, manufactured by LINTEC Co., Ltd.). #2000 Grinding the polished surface of the wafer (200mm diameter, thickness 280μm). Next, after the support sheet was peeled off, the film for forming a protective film was cured by heating at 130 ° C for 2 hours to form a protective film on the germanium wafer. The specular gloss of 60 degrees on the surface of the protective film was measured as the gloss value by the following measuring apparatus and measurement conditions.

測定裝置:VG 2000日本電色工業股份有限公司製 Measuring device: VG 2000 Nippon Denshoku Industrial Co., Ltd.

測定條件:依照JIS Z 8741 Measurement conditions: in accordance with JIS Z 8741

(3)文字之識別性(印刷性) (3) Identification of characters (printability)

使用Tape Mounter(LINTEC股份有限公司製,Adwill RAD-3600 F/12),將經剝離掉剝離薄片之保護膜形成用複合薄片的保護膜形成用薄膜,一邊加熱至70℃,一邊貼附於經#2000研磨之矽晶圓(200mm直徑、厚度280μm)的研磨面。接著,剝離支撐薄片後,藉由在130℃下進行2小時加熱,硬化保護膜形成用薄膜,於矽晶圓上形成保護膜。於保護膜表面上,使用雷射印刷裝置(Panasonic Device SUNX股份有限公司製LP-V10U,雷射波長:1056nm),印刷一文字的寬度為300μm以下之文字4個。以數位顯微鏡確認所得到之印刷完畢的保護膜面,以影像確認印刷是否可讀取。判斷基準係於數位顯微鏡之觀察時,以直射光照射印刷部時,將可充分讀取表示為「A 」、讀取可能性不鮮明表示為「B」,無法讀取表示為「F」。 The film for forming a protective film of the composite sheet for forming a protective film which has been peeled off from the release sheet is peeled off to 70° C., and is attached to the warp by using Tape Mounter (Adwill RAD-3600 F/12, manufactured by LINTEC Co., Ltd.). #2000 Grinding surface of a polished wafer (200 mm diameter, thickness 280 μm). Next, after the support sheet was peeled off, the film for forming a protective film was cured by heating at 130 ° C for 2 hours to form a protective film on the germanium wafer. On the surface of the protective film, four characters of a character having a width of 300 μm or less were printed using a laser printing apparatus (LP-V10U manufactured by Panasonic Device SUNX Co., Ltd., laser wavelength: 1056 nm). The printed protective film surface was confirmed by a digital microscope, and it was confirmed by image whether the printing was readable. When the judgment standard is observed by a digital microscope, when the printing unit is irradiated with direct light, the full reading is indicated as "A". The reading possibility is not clearly indicated as "B", and cannot be read as "F".

(4)可靠性評估 (4) Reliability assessment

使用Tape Mounter(LINTEC股份有限公司製,Adwill RAD-3600 F/12),將經剝離掉剝離薄片之保護膜形成用複合薄片的保護膜形成用薄膜,一邊加熱至70℃,一邊貼附於經#2000研磨之矽晶圓(200mm直徑、厚度280μm)的研磨面。接著,剝離支撐薄片後,藉由在130℃下進行2小時加熱,硬化保護膜形成用薄膜,於矽晶圓上形成保護膜。然後,在保護膜側貼附切割帶(LINTEC股份有限公司製Adwill D-676H),以使用切割裝置(DISCO股份有限公司製,DFD651)切割成3mm×3mm大小,得到可靠性評估用之附保護膜之晶片。 The film for forming a protective film of the composite sheet for forming a protective film which has been peeled off from the release sheet is peeled off to 70° C., and is attached to the warp by using Tape Mounter (Adwill RAD-3600 F/12, manufactured by LINTEC Co., Ltd.). #2000 Grinding surface of a polished wafer (200 mm diameter, thickness 280 μm). Next, after the support sheet was peeled off, the film for forming a protective film was cured by heating at 130 ° C for 2 hours to form a protective film on the germanium wafer. Then, a dicing tape (Adwill D-676H manufactured by LINTEC Co., Ltd.) was attached to the side of the protective film, and cut into a size of 3 mm × 3 mm using a cutting device (DFD651, manufactured by DISCO Co., Ltd.) to obtain a protection for reliability evaluation. Film wafer.

首先,上述可靠性評估用之附保護膜之晶片,係以模仿實際構裝半導體晶片之製程之條件(必需的條件,precondition)處理。具體而言,於125℃下烘烤附保護膜之晶片20小時,接著,於85℃、85%RH之條件下,放置168小時,使其吸濕,隨後立即於預熱160℃、峰值溫度260℃、加熱時間30秒鐘之條件的IR迴銲爐中,通過3次。將25個以此等必需的條件處理之附保護膜之晶片,設置於冷熱衝擊裝置(ESPEC股份有限公司製,TSE-11-A)內,重複1000次於-65℃下保持10分鐘,其後於150℃下保持10分鐘之循環。 First, the wafer with the protective film for reliability evaluation described above is processed under the condition (precondition) which mimics the process of actually mounting the semiconductor wafer. Specifically, the wafer with the protective film was baked at 125 ° C for 20 hours, and then placed at 85 ° C, 85% RH for 168 hours to make it absorb moisture, and then immediately preheated at 160 ° C, peak temperature. The IR reflow furnace at 260 ° C and a heating time of 30 seconds was passed three times. A wafer with 25 protective films treated under such necessary conditions was placed in a thermal shock device (TSE-11-A, manufactured by ESPEC Co., Ltd.), and repeated 1000 times at -65 ° C for 10 minutes. The cycle was maintained at 150 ° C for 10 minutes.

其後,自冷熱衝擊裝置取出25個附保護膜之晶片,評估可靠性。具體而言,藉由掃描式超音波探傷裝置( 日立建機FINETECH股份有限公司製Hye-Focus)及剖面觀察,評估晶片與保護膜之接合部之浮起/剝落、保護膜中之龜裂的有無,若有浮起、剝落、龜裂,則判定為不良(NG)。25個晶片中之NG的個數顯示於表4。 Thereafter, 25 wafers with a protective film were taken out from the thermal shock device to evaluate the reliability. Specifically, by means of a scanning ultrasonic flaw detection device ( Hitachi Construction Machinery FINETECH Co., Ltd. Hye-Focus) and cross-sectional observation, evaluate the floating/peeling of the joint between the wafer and the protective film, and the presence or absence of cracks in the protective film. If there is floating, peeling, or cracking, It was judged to be bad (NG). The number of NGs in the 25 wafers is shown in Table 4.

實施例1 Example 1

實施例1中,形成保護膜形成薄膜之成分如下。 In Example 1, the components forming the protective film forming film were as follows.

(A)丙烯酸系共聚物:共聚合1質量份丙烯酸正丁酯、79質量份甲基丙烯酸甲酯、15質量份丙烯酸2-羥基乙酯、5質量份甲基丙烯酸環氧丙酯而成之重量平均分子量(Mw)37萬、玻璃轉移溫度(Tg)7℃之共聚物 (A) Acrylic copolymer: copolymerized with 1 part by mass of n-butyl acrylate, 79 parts by mass of methyl methacrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 5 parts by mass of glycidyl methacrylate Copolymer with a weight average molecular weight (Mw) of 370,000 and a glass transition temperature (Tg) of 7 ° C

(B)環氧系硬化性成分 (B) epoxy-based hardening component

環氧系化合物:雙酚A型環氧樹脂(日本觸媒股份有限公司製,BPA-328)、雙環戊二烯型環氧樹脂(大日本油墨化學工業股份有限公司製、EPICLON HP-7200HH) Epoxy compound: bisphenol A epoxy resin (BPA-328, manufactured by Nippon Shokubai Co., Ltd.), dicyclopentadiene epoxy resin (manufactured by Dainippon Ink and Chemicals Co., Ltd., EPICLON HP-7200HH)

熱硬化劑:二氰二胺(ADEKA股份有限公司製、ADEKA HARDENER 3636AS) Thermal hardener: dicyandiamide (made by ADEKA Co., Ltd., ADEKA HARDENER 3636AS)

(C)填料:平均粒徑8μm之熔融石英填料(二氧化矽填料、龍森公司製,將SV-10物理性粉碎者) (C) Filler: fused silica filler with an average particle diameter of 8 μm (manganese dioxide filler, manufactured by Ronson Corporation, physically crushed by SV-10)

(D)著色劑:碳黑(三菱化學股份有限公司製、MA600、平均粒徑:28nm) (D) Colorant: Carbon black (manufactured by Mitsubishi Chemical Corporation, MA600, average particle diameter: 28 nm)

(E)矽烷偶合劑:寡聚物型矽烷偶合劑(信越化學工業股份有限公司製X-41-1056甲氧基當量17.1mmol/g、分子量500~1500)、γ-環氧丙氧基丙基三乙氧基矽烷(信越化學工業股份有限公司製KBE-403甲氧基當量8.1mmol/g、分子量278.4)、γ-環氧丙氧基丙基三甲氧基 矽烷(信越化學工業股份有限公司製KBM-403甲氧基當量12.7mmol/g、分子量236.3) (E) decane coupling agent: oligomer type decane coupling agent (X-4-56, methoxy equivalent of 17.01 mmol/g, molecular weight 500-1500), γ-glycidoxypropyl propylene Triethoxy decane (KBE-403 methoxy equivalent of 8.1 mmol/g, molecular weight 278.4), γ-glycidoxypropyltrimethoxy 矽 ( (KBM-403 methoxy equivalent of 12.7mmol/g, molecular weight 236.3)

(F)硬化促進劑:2-苯基-4,5-二羥甲基咪唑(四國化成工業股份有限公司製、CUREZOL 2PHZ) (F) Hardening accelerator: 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Chemical Industry Co., Ltd., CUREZOL 2PHZ)

將上述各材料以於表1所示之比例摻合而成之保護膜形成用組成物以甲基乙基酮稀釋,將其塗布於一面經剝離處理的聚對苯二甲酸乙二酯薄膜(LINTEC股份有限公司製、SP-PET5011、厚度50μm)所構成之支撐薄片之剝離處理面上,使乾燥除去後之厚度為25μm,於100℃下乾燥3分鐘,於支撐薄片上形成保護膜形成用薄膜。接著,於其保護膜形成用薄膜上,另外疊合剝離薄片(LINTEC股份有限公司製、SP-PET3811、厚度38μm),得到實施例1之保護膜形成用複合薄片。 The protective film-forming composition obtained by blending each of the above materials in the ratio shown in Table 1 was diluted with methyl ethyl ketone, and applied to a polyethylene terephthalate film which was subjected to release treatment ( The peeling-treated surface of the support sheet made of LINTEC Co., Ltd., SP-PET 5011, thickness 50 μm) was dried to a thickness of 25 μm, and dried at 100 ° C for 3 minutes to form a protective film on the support sheet. film. Then, a release sheet (SP-PET 3811, thickness: 38 μm, manufactured by LINTEC Co., Ltd.) was laminated on the film for forming a protective film to obtain a composite sheet for forming a protective film of Example 1.

實施例2、比較例1~6 Example 2, Comparative Examples 1 to 6

作為(A)丙烯酸系共聚物,除了使用於表2所示物的部分之外,與實施例1同樣地實施。另外,關於各實施例、比較例之(A)丙烯酸系共聚物,重量平均分子量(Mw)及玻璃轉移溫度(Tg)合併顯示於表2。 The (A) acrylic copolymer was carried out in the same manner as in Example 1 except that the portions shown in Table 2 were used. Further, the weight average molecular weight (Mw) and the glass transition temperature (Tg) of the (A) acrylic copolymer of each of the examples and the comparative examples are shown in Table 2.

實施例3 Example 3

作為(C)成分,使用平均粒徑3μm之二氧化矽填料(TOKUYAMA股份有限公司製、UF310)取代平均粒徑8μm之二氧化矽填料,除此之外,與實施例2同樣地實施。 The (C) component was carried out in the same manner as in Example 2 except that a cerium oxide filler (manufactured by TOKUYAMA Co., Ltd., UF310) having an average particle diameter of 3 μm was used instead of the cerium oxide filler having an average particle diameter of 8 μm.

實施例4 Example 4

作為(C)成分,使用平均粒徑0.5μm之二氧化矽填料(ADMATECHS公司製、SC2050MA)取代平均粒徑8μm之二氧化矽填料,除此之外,與實施例2同樣地實施。 The (C) component was carried out in the same manner as in Example 2 except that a cerium oxide filler (manufactured by ADMATECHS Co., Ltd., SC2050MA) having an average particle diameter of 0.5 μm was used instead of the cerium oxide filler having an average particle diameter of 8 μm.

實施例5、6 Example 5, 6

除了如表3所示般變更(C)成分之摻合量之部分之外,與實施例2同樣地實施。 Except that the part of the component (C) was changed as shown in Table 3, the same procedure as in Example 2 was carried out.

實施例7、8 Examples 7, 8

除了如表3所示般變更(A)及(B)成分之摻合量之部分之外,與實施例2同樣地實施。 Except that part of the blending amount of the components (A) and (B) was changed as shown in Table 3, the same procedure as in Example 2 was carried out.

關於各實施例1~8、比較例1~6,測定光澤值的同時,評估印刷識別性及可靠性。結果顯示於表4。 With respect to each of Examples 1 to 8 and Comparative Examples 1 to 6, the gloss value was measured, and the print visibility and reliability were evaluated. The results are shown in Table 4.

如由表4可見般,就實施例1~8而言,由於(A)丙烯酸系聚合物含有8質量%以下之含環氧基之單體作為構成單體,且玻璃轉移溫度為-3℃以上,藉此可使富含(A)成分之相與富含(B)成分之硬化物之相之相分離性變得優良,且光澤值亦為20以上,故印刷識別性及可靠性之兩者可變得優良。 As shown in Table 4, in the examples 1 to 8, the (A) acrylic polymer contains 8% by mass or less of an epoxy group-containing monomer as a constituent monomer, and the glass transition temperature is -3 ° C. As described above, the phase separation property of the phase rich in the component (A) and the phase of the cured product rich in the component (B) is excellent, and the gloss value is also 20 or more, so that the printability and reliability are printed. Both can be excellent.

另一方面,就比較例1而言,由於(A)丙烯酸系聚合物不含含環氧基之單體作為構成單體,故因為相分離而於保護膜表面產生微小凹凸,其結果,導致保護膜表面之反射光散射。因此,光澤值變小,印刷識別性變差。此外,就比較例2、3、6而言,由於(A)丙烯酸系聚合物之玻璃轉移溫度小於-3℃,推測保護膜因熱履歴而變形 ,NG晶片之數量變多,附保護膜之晶片的可靠性無法充分提升。再者,就比較例4、5而言,由於(A)丙烯酸系聚合物含有多量含環氧基之單體作為構成單體,(A)成分與(B)成分之親和性高,不易引起相分離,附保護膜之晶片的可靠性變低。 On the other hand, in Comparative Example 1, since the (A) acrylic polymer does not contain an epoxy group-containing monomer as a constituent monomer, fine irregularities are formed on the surface of the protective film due to phase separation, and as a result, Reflected light scattering from the surface of the protective film. Therefore, the gloss value becomes small, and the print recognition property is deteriorated. Further, in Comparative Examples 2, 3, and 6, since the glass transition temperature of the (A) acrylic polymer was less than -3 ° C, it was presumed that the protective film was deformed by heat stagnation. As the number of NG wafers increases, the reliability of wafers with protective films cannot be sufficiently improved. Further, in Comparative Examples 4 and 5, since the (A) acrylic polymer contains a large amount of the epoxy group-containing monomer as a constituent monomer, the affinity between the component (A) and the component (B) is high, and it is difficult to cause The phase separation, the reliability of the wafer with the protective film becomes low.

Claims (8)

一種保護膜形成用薄膜,其係用以形成保護半導體晶片的保護膜之保護膜形成用薄膜,該保護膜形成用薄膜含有(A)丙烯酸系聚合物、(B)環氧系硬化性成分、及(C)填料;構成(A)丙烯酸系聚合物之單體係以佔全部單體的8質量%以下之比例含有含環氧基之單體,並且(A)丙烯酸系聚合物之玻璃轉移溫度係-3℃以上;將該保護膜形成用薄膜硬化而得之保護膜之至少一面之藉由JIS Z 8741測定的光澤值係20以上。 A film for forming a protective film for forming a film for forming a protective film for protecting a protective film of a semiconductor wafer, wherein the film for forming a protective film contains (A) an acrylic polymer, (B) an epoxy-based curable component, And (C) a filler; a single system constituting the (A) acrylic polymer contains an epoxy group-containing monomer in a proportion of 8% by mass or less of the total monomers, and (A) a glass transition of the acrylic polymer The temperature is -3 ° C or higher, and the gloss value measured by JIS Z 8741 is at least 20 on at least one side of the protective film obtained by curing the film for forming a protective film. 如請求項1之保護膜形成用薄膜,其中(A)丙烯酸系聚合物之玻璃轉移溫度係6℃以下。 The film for forming a protective film according to claim 1, wherein the glass transition temperature of the (A) acrylic polymer is 6 ° C or lower. 如請求項1或2之保護膜形成用薄膜,其中構成(A)丙烯酸系聚合物之單體係進一步含有(甲基)丙烯酸烷基酯。 The film for forming a protective film according to claim 1 or 2, wherein the single system constituting the (A) acrylic polymer further contains an alkyl (meth)acrylate. 如請求項1至3中任一項之保護膜形成用薄膜,其中構成(A)丙烯酸系聚合物之單體係以佔全部單體之12質量%以下之比例含有烷基之碳數為4以上之(甲基)丙烯酸烷基酯。 The film for forming a protective film according to any one of claims 1 to 3, wherein the single system constituting the (A) acrylic polymer has a carbon number of 4 in an amount of 12% by mass or less based on the total of the monomers. The above alkyl (meth)acrylate. 如請求項4之保護膜形成用薄膜,其中該烷基之碳數為4以上之(甲基)丙烯酸烷基酯係(甲基)丙烯酸丁酯。 The film for forming a protective film according to claim 4, wherein the alkyl group has a carbon number of 4 or more (meth)acrylic acid alkyl ester (butyl) (meth)acrylate. 如請求項1至5中任一項之保護膜形成用薄膜,其中(C)填料之含量為保護膜形成用薄膜之50質量%以上。 The film for forming a protective film according to any one of claims 1 to 5, wherein the content of the (C) filler is 50% by mass or more of the film for forming a protective film. 如請求項1至6中任一項之保護膜形成用薄膜,其係進一步含有(D)著色劑。 The film for forming a protective film according to any one of claims 1 to 6, which further comprises (D) a colorant. 一種附保護膜之晶片,其係具備半導體晶片與設置在 該半導體晶片上之保護膜的附保護膜之晶片;該保護膜係將保護膜形成用薄膜硬化而形成者,並且該保護膜形成用薄膜含有(A)丙烯酸系聚合物、(B)環氧系硬化性成分、及(C)填料;構成(A)丙烯酸系聚合物之單體係以佔全部單體的8質量%以下之比例含有含環氧基之單體,並且(A)丙烯酸系聚合物之玻璃轉移溫度係-3℃以上;該保護膜之與該半導體晶片側的面相反的面之藉由JIS Z 8741測定的光澤值係20以上。 A protective film wafer having a semiconductor wafer and disposed thereon a protective film of a protective film on a semiconductor wafer; the protective film is formed by curing a film for forming a protective film, and the film for forming a protective film contains (A) an acrylic polymer, (B) an epoxy a curable component and (C) a filler; a single system constituting the (A) acrylic polymer contains an epoxy group-containing monomer in an amount of 8% by mass or less based on the total monomers, and (A) an acrylic system The glass transition temperature of the polymer is -3 ° C or higher; the gloss value measured by JIS Z 8741 of the surface of the protective film opposite to the surface on the semiconductor wafer side is 20 or more.
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JP6388228B2 (en) * 2013-12-27 2018-09-12 パナソニックIpマネジメント株式会社 Liquid epoxy resin composition for semiconductor encapsulation and semiconductor device using the same
JP6458290B2 (en) * 2014-03-28 2019-01-30 リンテック株式会社 Protective film forming film and method of manufacturing semiconductor chip with protective film
JP7154732B2 (en) 2016-03-31 2022-10-18 味の素株式会社 resin composition
JP6353868B2 (en) * 2016-06-07 2018-07-04 リンテック株式会社 Protective film forming sheet
KR102487552B1 (en) 2018-02-05 2023-01-11 삼성전자주식회사 Composition for protective film against sawing process and method of manufacturing semiconductor package using the composition
JP7156335B2 (en) * 2020-06-03 2022-10-19 味の素株式会社 RESIN COMPOSITION, ADHESIVE FILM, COMPONENT-BUILDING CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SHEET-LIKE RESIN COMPOSITION

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3601443B2 (en) 1999-11-30 2004-12-15 日立化成工業株式会社 Adhesive film, method of manufacturing the same, wiring board for mounting semiconductor, and semiconductor device
JP3544362B2 (en) 2001-03-21 2004-07-21 リンテック株式会社 Method for manufacturing semiconductor chip
JP2004074472A (en) * 2002-08-12 2004-03-11 Kanegafuchi Chem Ind Co Ltd Matting acrylic thermoplastic resin film and acrylic laminate of the film
JP4364508B2 (en) * 2002-12-27 2009-11-18 リンテック株式会社 Protective film forming sheet for chip back surface and manufacturing method of chip with protective film
JP2007250970A (en) * 2006-03-17 2007-09-27 Hitachi Chem Co Ltd Film for protecting rear face of semiconductor element, semiconductor device using the same and manufacturing method thereof
JP2008006386A (en) * 2006-06-29 2008-01-17 Furukawa Electric Co Ltd:The Method for forming protective film using protective-film-forming sheet for chip
JP2009130233A (en) * 2007-11-27 2009-06-11 Furukawa Electric Co Ltd:The Film for chip protection
CN102083932B (en) * 2008-07-01 2014-08-20 Lg化学株式会社 Acrylic composition for optical members, protective film for optical members, polarizing plate, and liquid crystal display
CN102372826A (en) * 2010-08-12 2012-03-14 株式会社Lg化学 Thermally curable resin composition for protective film
JP5893250B2 (en) * 2011-01-31 2016-03-23 リンテック株式会社 Chip protective film forming sheet, semiconductor chip manufacturing method, and semiconductor device

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