TW201428901A - Semiconductor package and fabrication method thereof - Google Patents

Semiconductor package and fabrication method thereof Download PDF

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Publication number
TW201428901A
TW201428901A TW102100385A TW102100385A TW201428901A TW 201428901 A TW201428901 A TW 201428901A TW 102100385 A TW102100385 A TW 102100385A TW 102100385 A TW102100385 A TW 102100385A TW 201428901 A TW201428901 A TW 201428901A
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TW
Taiwan
Prior art keywords
electrical connection
semiconductor package
aluminum
pad
carrier
Prior art date
Application number
TW102100385A
Other languages
Chinese (zh)
Inventor
洪隆棠
林偉勝
葉孟宏
Original Assignee
矽品精密工業股份有限公司
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Filing date
Publication date
Application filed by 矽品精密工業股份有限公司 filed Critical 矽品精密工業股份有限公司
Priority to TW102100385A priority Critical patent/TW201428901A/en
Priority to CN201310021830.8A priority patent/CN103915400A/en
Priority to US14/086,599 priority patent/US20140191393A1/en
Publication of TW201428901A publication Critical patent/TW201428901A/en

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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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Abstract

Disclosed is a semiconductor package, comprising a carrier having an electrical connecting pad, a semiconductor element disposed on the carrier and having an electrode pad, a conductive element electrically connected to the electrode pad and the electrical connecting pad, a fluorine ion formed on the conductive element and connected to the electrode pad or the electrical connecting pad, and an encapsulant formed on the carrier and the conductive element, wherein the electrode pad or the electrical connecting pad is formed by an aluminum material to form a fluorine aluminum by packaging the fluorine ion to increase the corrosion proof property of the semiconductor package.

Description

半導體封裝件及其製法 Semiconductor package and its manufacturing method

本發明係有關一種半導體封裝件及其製法，尤指一種能提升可靠度之半導體封裝件及其製法。 The present invention relates to a semiconductor package and a method of fabricating the same, and more particularly to a semiconductor package capable of improving reliability and a method of fabricating the same.

隨著電子產業的蓬勃發展，電子產品也逐漸邁向多功能、高性能的趨勢。如第1A圖所示，係揭示一種習知打線式半導體封裝件1，其將具有複數電極墊110之半導體晶片11設於一如導線架或封裝基板之承載件10上，再以導線12電性連接該半導體晶片11與該承載件10之電性連接墊100(或導線架之導腳)，之後以如環氧樹脂之封裝膠體13包覆該半導體晶片11與導線12，俾藉由該封裝膠體13保護該半導體晶片11及承載件10，而避免該半導體晶片11及承載件10受外界之水氣或污染物侵害。 With the rapid development of the electronics industry, electronic products are gradually moving towards multi-functional and high-performance trends. As shown in FIG. 1A, a conventional wire-wound semiconductor package 1 is disclosed in which a semiconductor wafer 11 having a plurality of electrode pads 110 is disposed on a carrier 10 such as a lead frame or a package substrate, and then the wires 12 are electrically connected. The semiconductor wafer 11 and the electrical connection pad 100 of the carrier 10 (or the lead of the lead frame) are connected, and then the semiconductor wafer 11 and the wire 12 are covered with an encapsulant 13 such as epoxy resin. The encapsulant 13 protects the semiconductor wafer 11 and the carrier 10 from the external moisture or contaminants of the semiconductor wafer 11 and the carrier 10.

於習知半導體封裝件1中，該封裝膠體13係含有氯(Cl)離子130(如第1B圖所示)，且該導線12係為銅(Cu)線。 In the conventional semiconductor package 1, the encapsulant 13 contains chlorine (Cl) ions 130 (as shown in FIG. 1B), and the wires 12 are copper (Cu) wires.

再者，相較於金(Au)線，以銅線作為該導線12不僅能降低成本，且具有較佳的導電性及導熱性，而使銅線 之線徑較細及散熱效率較佳。 Furthermore, compared to the gold (Au) line, the use of a copper wire as the wire 12 not only reduces the cost, but also has better conductivity and thermal conductivity, and makes the copper wire The wire diameter is finer and the heat dissipation efficiency is better.

又習知半導體封裝件1於封裝後，如第1B(a)圖所示，於鋁(Al)材(即該電性連接墊100與電極墊110之材質)14a與銅材(即該導線12之材質)14b之間將反應產生鋁/銅(Al-Cu)合金化合物15，即習知介面合金共化物(Intermetallic Compound,IMC)，如下列化學式(1)所示，且該鋁/銅合金化合物15將依成份含量分為第一合金部15a與第二合金部15b，即該第一合金部15a之鋁含量較多(因靠近鋁材14a)，而該第二合金部15b之銅含量較多(因靠近銅材14b)。 It is also known that after the semiconductor package 1 is packaged, as shown in FIG. 1B(a), the aluminum (Al) material (that is, the material of the electrical connection pad 100 and the electrode pad 110) 14a and the copper material (ie, the wire) The material of 12) is reacted between 14b to produce an aluminum/copper (Al-Cu) alloy compound 15, which is an Intermetallic Compound (IMC), as shown in the following chemical formula (1), and the aluminum/copper The alloy compound 15 is divided into a first alloy portion 15a and a second alloy portion 15b depending on the content of the component, that is, the first alloy portion 15a has a large aluminum content (because it is close to the aluminum material 14a), and the second alloy portion 15b is copper. More content (due to the proximity of copper 14b).

9Cu+4Al → Cu9Al4………(1) 9Cu+4Al → Cu 9 Al 4 .........(1)

之後，如第1B(b)圖所示，該封裝膠體13中之氯離子130會腐蝕該鋁/銅合金化合物15，致使該第二合金部15b與該氯離子130產生氯化鋁(AlCl3)層16與銅離子140，如下列化學式(2)所示，又於水氣環境下(如高壓蒸煮)會產生氫氧根自由基，如下列化學式(3)所示，故該氫氧根自由基與該氯化鋁層16發生化學反應而產生氧化鋁(Al2O3)層17及酸性物質，如第1B(c)圖及下列化學式(4)所示。 Thereafter, as shown in FIG. 1B(b), the chloride ions 130 in the encapsulant 13 corrode the aluminum/copper alloy compound 15, causing the second alloy portion 15b and the chloride ions 130 to produce aluminum chloride (AlCl 3 ). The layer 16 and the copper ion 140, as shown in the following chemical formula (2), generate hydrogen radical radicals in a water gas environment (such as high pressure cooking), as shown in the following chemical formula (3), so the hydroxide The radical reacts with the aluminum chloride layer 16 to produce an aluminum oxide (Al 2 O 3 ) layer 17 and an acidic substance as shown in the first B (c) diagram and the following chemical formula (4).

Cu9Al4+12Cl- → 4AlCl3+9Cu+12e-………(2) Cu 9 Al 4 +12Cl - → 4AlCl 3 +9Cu+12e - .........(2)

H2O+½O2+2e- → 2OH-………(3) H 2 O+1⁄2O 2 +2e - → 2OH - .........(3)

AlCl3+3OH- → Al2O3+3HCl+3e-………(4) AlCl 3 +3OH - → Al 2 O 3 +3HCl+3e - .........(4)

惟，氧化鋁(Al2O3)係為一種絕緣物質，其抗腐蝕性不佳，亦即該氧化鋁層17容易腐蝕化，致使該氧化鋁層17之腐蝕化速度增加，因而造成銅線(即該銅材14b或導線 12)剝離，導致該半導體封裝件1發生電性斷線，以致於產品之可靠度不佳。 However, aluminum oxide (Al 2 O 3 ) is an insulating material, and its corrosion resistance is not good, that is, the aluminum oxide layer 17 is easily corroded, so that the etching rate of the aluminum oxide layer 17 is increased, thereby causing copper wire. (ie, the copper material 14b or the wire 12) is peeled off, causing the semiconductor package 1 to be electrically broken, so that the reliability of the product is not good.

因此，如何克服上述習知技術的問題，實已成目前亟欲解決的課題。 Therefore, how to overcome the problems of the above-mentioned prior art has become a problem that is currently being solved.

鑑於上述習知技術之種種缺失，本發明係提供一種半導體封裝件，係包括：承載件，係具有複數電性連接墊；半導體元件，係設於該承載件上，該半導體元件具有複數電極墊，且形成該電極墊或該電性連接墊之材質係為鋁材；複數導電元件，係電性連接該電極墊與該電性連接墊；氟離子，係形成於該導電元件與該電極墊之間、或該導電元件與該電性連接墊之間；以及封裝膠體，係形成於該承載件與該些導電元件上。 In view of the above-mentioned various deficiencies of the prior art, the present invention provides a semiconductor package comprising: a carrier having a plurality of electrical connection pads; and a semiconductor component disposed on the carrier, the semiconductor component having a plurality of electrode pads And forming the electrode pad or the material of the electrical connection pad is aluminum; a plurality of conductive elements electrically connecting the electrode pad and the electrical connection pad; and fluorine ions are formed on the conductive element and the electrode pad Between or between the conductive element and the electrical connection pad; and an encapsulant formed on the carrier and the conductive elements.

前述之半導體封裝件中，該導電元件係為銅線或銅凸塊。 In the foregoing semiconductor package, the conductive element is a copper wire or a copper bump.

本發明復提供一種半導體封裝件之製法，係包括：提供一具有複數電性連接墊之承載件；設置至少一具有複數電極墊之半導體元件於該承載件上，且形成該電極墊或該電性連接墊之材質係為鋁材；形成氟離子於該些電極墊上或該些電性連接墊上；以複數導電元件電性連接該電極墊與該電性連接墊；以及形成封裝膠體於該承載件與該些導電元件上。 The invention provides a method for fabricating a semiconductor package, comprising: providing a carrier having a plurality of electrical connection pads; disposing at least one semiconductor component having a plurality of electrode pads on the carrier, and forming the electrode pad or the electricity The material of the connection pad is aluminum; forming fluoride ions on the electrode pads or the electrical connection pads; electrically connecting the electrode pads and the electrical connection pads with a plurality of conductive elements; and forming an encapsulant on the carrier And the conductive elements.

前述之製法中，該導電元件係為銅線。 In the above method, the conductive element is a copper wire.

本發明又提供一種半導體封裝件之製法，係包括：提 供一具有複數電性連接墊之承載件、及至少一具有複數電極墊之半導體元件，且形成該電極墊或該電性連接墊之材質係為鋁材，又該些電極墊上或該些電性連接墊上具有氟離子；以複數導電元件設置該半導體元件於該承載件上，且該些導電元件電性連接該電極墊與該電性連接墊；以及形成封裝膠體於該承載件與該些導電元件上。 The invention further provides a method for fabricating a semiconductor package, which comprises: Providing a carrier having a plurality of electrical connection pads, and at least one semiconductor component having a plurality of electrode pads, and the material forming the electrode pads or the electrical connection pads is aluminum, and the electrode pads or the electrodes The connection pad has fluorine ions; the semiconductor element is disposed on the carrier by a plurality of conductive elements, and the conductive elements are electrically connected to the electrode pad and the electrical connection pad; and the encapsulant is formed on the carrier and the On the conductive element.

前述之製法中，該導電元件係為銅凸塊。 In the above method, the conductive element is a copper bump.

前述之兩種製法中，復包括以有機氟溶液清洗該電極墊或該電性連接墊，再殘留微量氟離子，以形成該氟離子。 In the above two methods, the electrode pad or the electrical connection pad is washed with an organic fluorine solution, and a trace amount of fluoride ions remains to form the fluoride ion.

前述之半導體封裝件及其製法中，該導電元件與該電極墊及該電性連接墊之間係產生介面合金共化物。 In the above semiconductor package and method of fabricating the same, an interface alloy is formed between the conductive element and the electrode pad and the electrical connection pad.

前述之半導體封裝件及其製法中，該氟離子係以氟化鋁的形式存在，例如，形成氟化鋁於該導電元件與該電極墊之間、或該導電元件與該電性連接墊之間。 In the foregoing semiconductor package and method of fabricating the same, the fluoride ion is in the form of aluminum fluoride, for example, forming aluminum fluoride between the conductive element and the electrode pad, or the conductive element and the electrical connection pad. between.

另外，前述之半導體封裝件及其製法中，該封裝膠體中含有氯離子，故復包括形成氯化鋁於該些電極墊與該些電性連接墊上。 In addition, in the foregoing semiconductor package and the manufacturing method thereof, the encapsulant contains chlorine ions, so the aluminum chloride is formed on the electrode pads and the electrical connection pads.

由上可知，本發明之半導體封裝件及其製法，係藉由添加氟離子以形成氟化鋁，而能減少習知氯化鋁之含量，進而降低氧化鋁之形成量，故相較於習知技術之腐蝕化速率，本發明之腐蝕化速率大幅減緩，且能提高抗腐蝕性之功效，藉以避免導電元件(即銅線或銅凸塊)剝離所產生之電性斷路之問題。因此，本發明不僅能提升半導體封裝件之可靠度，且能延長高壓蒸煮信賴性(pressure cooker test) 之壽命。 It can be seen from the above that the semiconductor package of the present invention and the method for preparing the same can reduce the content of the conventional aluminum chloride by reducing the content of the aluminum chloride by adding fluoride ions, thereby reducing the amount of alumina formed. Knowing the corrosion rate of the technology, the corrosion rate of the present invention is greatly slowed down, and the anti-corrosion effect can be improved by avoiding the problem of electrical disconnection caused by peeling of the conductive member (i.e., copper wire or copper bump). Therefore, the present invention can not only improve the reliability of the semiconductor package, but also prolong the pressure cooker test. Life expectancy.

1,2,3‧‧‧半導體封裝件 1,2,3‧‧‧Semiconductor package

10,20‧‧‧承載件 10,20‧‧‧Carrier

100,200‧‧‧電性連接墊 100,200‧‧‧Electrical connection pads

11‧‧‧半導體晶片 11‧‧‧Semiconductor wafer

110,210‧‧‧電極墊 110,210‧‧‧electrode pads

12‧‧‧導線 12‧‧‧ wire

13,23‧‧‧封裝膠體 13,23‧‧‧Package colloid

130,230‧‧‧氯離子 130,230‧‧‧ chloride ion

14a,24a‧‧‧鋁材 14a, 24a‧‧‧Aluminum

14b,24b‧‧‧銅材 14b, 24b‧‧‧ copper

140,240‧‧‧銅離子 140,240‧‧‧ copper ion

15‧‧‧鋁/銅合金化合物 15‧‧‧Aluminum/copper alloy compounds

15a,25a‧‧‧第一合金部 15a, 25a‧‧‧First Alloy Division

15b,25b‧‧‧第二合金部 15b, 25b‧‧‧Second Alloy Division

16‧‧‧氯化鋁層 16‧‧‧Aluminum chloride layer

17‧‧‧氧化鋁層 17‧‧‧Alumina layer

21‧‧‧半導體元件 21‧‧‧Semiconductor components

22,32‧‧‧導電元件 22,32‧‧‧Conductive components

25‧‧‧介面合金共化物 25‧‧‧Interface alloy compound

26‧‧‧化合物層 26‧‧‧ compound layer

28‧‧‧氟離子 28‧‧‧Fluoride

第1A圖係為習知半導體封裝件之剖視示意圖； 第1B圖係為習知半導體封裝件之反應流程示意圖； 第2A至2C圖係為本發明之半導體封裝件之製法之第一實施例的剖視示意圖； 第2D圖係為本發明之半導體封裝件之反應流程示意圖；以及 第3A至3B圖係為本發明之半導體封裝件之製法之第二實施例之製法的剖視示意圖。 1A is a schematic cross-sectional view of a conventional semiconductor package; 1B is a schematic diagram of a reaction flow of a conventional semiconductor package; 2A to 2C are schematic cross-sectional views showing a first embodiment of a method of fabricating a semiconductor package of the present invention; 2D is a schematic diagram of a reaction flow of the semiconductor package of the present invention; 3A to 3B are cross-sectional views showing the manufacturing method of the second embodiment of the method of fabricating the semiconductor package of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如“上”及“一”等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper" and "one" as used in the specification are merely for convenience of description, and are not intended to limit the scope of the invention, and the relative relationship is changed or adjusted. Substantially changing the technical content is also considered to be within the scope of the invention.

第2A至2C圖係為本發明之半導體封裝件2之製法之第一實施例的剖面示意圖。 2A to 2C are schematic cross-sectional views showing a first embodiment of the method of fabricating the semiconductor package 2 of the present invention.

如第2A圖所示，設置至少一具有複數電極墊210之半導體元件21於一具有複數電性連接墊200之承載件20上，再形成氟(F)離子28於該些電極墊210與該些電性連接墊200上。 As shown in FIG. 2A, at least one semiconductor component 21 having a plurality of electrode pads 210 is disposed on a carrier 20 having a plurality of electrical connection pads 200, and fluorine (F) ions 28 are formed on the electrode pads 210. These are electrically connected to the pad 200.

於本實施例中，該承載件20係為封裝基板，且形成該電極墊210及該電性連接墊200之材質係為鋁(Al)材，而於另一實施例中，該電極墊210之材質係為其它金屬材，僅該電性連接墊200之材質為鋁(Al)材；亦可依需求，僅該電極墊210之材質為鋁(Al)材，該電性連接墊200之材質係為其它金屬材。 In this embodiment, the carrier 20 is a package substrate, and the material of the electrode pad 210 and the electrical connection pad 200 is aluminum (Al) material, and in another embodiment, the electrode pad 210 The material is made of other metal materials, and only the material of the electrical connection pad 200 is aluminum (Al) material; if desired, only the material of the electrode pad 210 is aluminum (Al) material, and the electrical connection pad 200 The material is made of other metal materials.

再者，於其它實施例中，該承載件20亦可為導線架，且導線架之導腳係定義為該電性連接墊200。 Moreover, in other embodiments, the carrier 20 can also be a lead frame, and the lead leg of the lead frame is defined as the electrical connection pad 200.

又，藉由使用稀釋之有機氟溶液清洗該電極墊210與該電性連接墊200，再殘留微量氟離子28，以形成所述之氟離子28。 Moreover, the electrode pad 210 and the electrical connection pad 200 are cleaned by using a diluted organic fluorine solution, and a trace amount of fluoride ions 28 are left to form the fluoride ions 28.

如第2B圖所示，進行打線製程，令該電極墊210藉由複數導電元件22電性連接至該電性連接墊200。 As shown in FIG. 2B, the wire bonding process is performed to electrically connect the electrode pad 210 to the electrical connection pad 200 by a plurality of conductive elements 22.

於本實施例中，該導電元件22係為銅(Cu)線，故該導電元件22與該電極墊210及該電性連接墊200之間將產生介面合金共化物(IMC)25(如第2D圖所示)。 In this embodiment, the conductive element 22 is a copper (Cu) line, so an interface alloy commonality (IMC) 25 is generated between the conductive element 22 and the electrode pad 210 and the electrical connection pad 200 (eg, 2D picture).

如第2C及2D圖所示，形成含有氯(Cl)離子230之封裝膠體23於該承載件20上，以包覆該半導體元件21與該些導 電元件22。 As shown in FIGS. 2C and 2D, an encapsulant 23 containing chlorine (Cl) ions 230 is formed on the carrier 20 to encapsulate the semiconductor device 21 and the leads. Electrical component 22.

當封裝後，如第2D圖所示，於鋁材(即該電性連接墊200與電極墊210之材質)24a與銅材(即該導電元件22之材質)24b之間將反應產生介面合金共化物25，即鋁/銅(Al-Cu)合金化合物，如下列化學式(5)所示，且該介面合金共化物25將依成份含量分為第一合金部25a與第二合金部25b，如第2D(a)圖所示，該第一合金部25a之鋁含量較多(因靠近鋁材24a)，而該第二合金部25b之銅含量較多(因靠近銅材24b)。 After encapsulation, as shown in FIG. 2D, an aluminum alloy (ie, the material of the electrical connection pad 200 and the electrode pad 210) 24a and the copper material (ie, the material of the conductive element 22) 24b will react to form an interface alloy. a compound 25, that is, an aluminum/copper (Al-Cu) alloy compound, as shown in the following chemical formula (5), and the interface alloy compound 25 is divided into a first alloy portion 25a and a second alloy portion 25b depending on the content of the component, As shown in Fig. 2D(a), the first alloy portion 25a has a large aluminum content (because it is close to the aluminum material 24a), and the second alloy portion 25b has a large copper content (because it is close to the copper material 24b).

9Cu+4Al → Cu9Al4………(5) 9Cu+4Al → Cu 9 Al 4 .........(5)

之後，該第二合金部25b與該封裝膠體23中之氯離子230及該氟離子28將產生銅離子240與一含有氯化鋁(AlCl3)及氟化鋁(AlF3)之化合物層26，如下列化學式(6)所示。 Thereafter, the second alloy portion 25b and the chloride ions 230 and the fluoride ions 28 in the encapsulant 23 will generate copper ions 240 and a compound layer 26 containing aluminum chloride (AlCl 3 ) and aluminum fluoride (AlF 3 ). , as shown in the following chemical formula (6).

Cu9Al4+12(Cl-+F-) → 4(AlCl3+AlF3)+9Cu+12e-………(6) Cu 9 Al 4 +12(Cl - +F - ) → 4(AlCl 3 +AlF 3 )+9Cu+12e - .........(6)

再者，於水氣環境下(如高壓蒸煮)會產生氫氧根自由基，故該氫氧根自由基與該氯化鋁發生化學反應而產生氧化鋁(Al2O3)。另一方面，因氟化鋁之活性較氯化鋁之活性穩定，且氟化鋁不易溶於水，故氟化鋁不會氧化成氧化鋁。 Furthermore, in a water vapor environment (such as high pressure cooking), a hydroxyl radical is generated, so that the hydroxide radical chemically reacts with the aluminum chloride to produce aluminum oxide (Al 2 O 3 ). On the other hand, since the activity of aluminum fluoride is more stable than that of aluminum chloride, and aluminum fluoride is not easily soluble in water, aluminum fluoride is not oxidized to alumina.

因此，藉由形成氟化鋁能減少習知腐蝕反應的中間物之量，亦即減少該氯化鋁之含量，因而能大幅降低氧化鋁之形成量，較佳地，氯化鋁之含量少於氟化鋁之含量，故相較於習知氯化鋁層，氟化鋁能減緩水氣對氯離子腐蝕， 使該化合物層26之腐蝕化速率大幅減緩，且能提高抗腐蝕性之功效，因而能避免導電元件22剝離所產生之電性斷線之問題，不僅能提升本發明之半導體封裝件2之可靠度，且能延長銅線高壓蒸煮信賴性(pressure cooker test)之壽命。 Therefore, by forming aluminum fluoride, the amount of the intermediate of the conventional corrosion reaction can be reduced, that is, the content of the aluminum chloride can be reduced, thereby greatly reducing the amount of alumina formed, preferably, the content of aluminum chloride is small. Because of the content of aluminum fluoride, aluminum fluoride can slow down the corrosion of chloride ions by water vapor compared with the conventional aluminum chloride layer. The corrosion rate of the compound layer 26 is greatly slowed down, and the anti-corrosion effect can be improved, thereby avoiding the problem of electrical disconnection caused by the peeling of the conductive member 22, and not only improving the reliability of the semiconductor package 2 of the present invention. Degree, and can extend the life of the copper line high pressure cooker test.

第3A至3B圖係為本發明之半導體封裝件3之之製法第二實施例的剖面示意圖。本實施例與第一實施例之差異主要在於導電元件32之結構及封裝方式。 3A to 3B are schematic cross-sectional views showing a second embodiment of the method of fabricating the semiconductor package 3 of the present invention. The difference between this embodiment and the first embodiment is mainly in the structure and packaging manner of the conductive member 32.

如第3A圖所示，該導電元件32係為銅凸塊並形成於該些電極墊210上，且該些電極墊210與該些電性連接墊200上具有氟離子28。 As shown in FIG. 3A, the conductive element 32 is formed as a copper bump and formed on the electrode pads 210, and the electrode pads 210 and the electrical connection pads 200 have fluorine ions 28.

於其它實施例中，該導電元件32亦可形成於該電性連接墊200上；或者，該導電元件32形成於該電性連接墊200及該電極墊210上。 In other embodiments, the conductive component 32 can also be formed on the electrical connection pad 200; or the conductive component 32 can be formed on the electrical connection pad 200 and the electrode pad 210.

如第3B圖所示，以覆晶方式，藉由該些導電元件32設置該半導體元件21於該承載件20上，且該些導電元件32電性連接該電極墊210與該電性連接墊200。 As shown in FIG. 3B, the semiconductor element 21 is disposed on the carrier 20 by the conductive elements 32, and the conductive elements 32 are electrically connected to the electrode pad 210 and the electrical connection pad. 200.

接著，形成封裝膠體23於該承載件20上，以包覆該半導體元件21與該些導電元件32。 Next, an encapsulant 23 is formed on the carrier 20 to encapsulate the semiconductor component 21 and the conductive components 32.

當封裝後，如第2D圖所示，於鋁材24a與銅材24b之間將反應產生介面合金共化物25，且該介面合金共化物25將依成份含量分為第一合金部25a與第二合金部25b，該第一合金部25a之鋁含量較多，而該第二合金部25b之銅含量較多。之後，該第二合金部25b與該封裝膠體23 中之氯離子230及該氟離子28將產生銅離子240與一含有氯化鋁及氟化鋁之化合物層26。 After encapsulation, as shown in FIG. 2D, a reaction between the aluminum material 24a and the copper material 24b produces a interface alloy compound 25, and the interface alloy compound 25 is divided into a first alloy portion 25a and a portion according to the content of the component. In the second alloy portion 25b, the first alloy portion 25a has a large aluminum content, and the second alloy portion 25b has a large copper content. Thereafter, the second alloy portion 25b and the encapsulant 23 The chloride ion 230 and the fluoride ion 28 will produce a copper ion 240 and a compound layer 26 containing aluminum chloride and aluminum fluoride.

因氟化鋁之活性較氯化鋁之活性穩定，且氟化鋁不易溶於水，故氟化鋁不會氧化成氧化鋁。因此，藉由形成氟化鋁能減少減少該氯化鋁之含量，因而能大幅降低氧化鋁之形成量，故該化合物層26之腐蝕化速率大幅減緩，且能提高抗腐蝕性之功效，因而能避免電性斷路之問題，不僅能提升產品可靠度，且能延長銅凸塊高壓蒸煮信賴性之壽命。 Since the activity of aluminum fluoride is more stable than that of aluminum chloride, and aluminum fluoride is not easily soluble in water, aluminum fluoride is not oxidized to alumina. Therefore, the formation of aluminum fluoride can reduce the content of the aluminum chloride, thereby greatly reducing the amount of alumina formed, so that the corrosion rate of the compound layer 26 is greatly reduced, and the corrosion resistance can be improved, thereby The problem of avoiding electrical disconnection can not only improve the reliability of the product, but also prolong the life of the copper bump high-pressure cooking reliability.

另外，有關覆晶封裝之方式繁多，不以上述為限，特此述明。 In addition, there are many methods for flip chip packaging, and the present invention is not limited thereto.

本發明提供一種半導體封裝件2,3，係包括：一具有複數電性連接墊200之承載件20、設於該承載件20上之至少一半導體元件21、連結該電性連接墊200至該半導體元件21之複數導電元件22,32、形成於該導電元件22,32與該電性連接墊200之間的氟離子28、以及形成於該承載件20與該導電元件22,32上之封裝膠體23。 The present invention provides a semiconductor package 2, 3 comprising: a carrier 20 having a plurality of electrical connection pads 200, at least one semiconductor component 21 disposed on the carrier 20, and the electrical connection pad 200 a plurality of conductive elements 22, 32 of the semiconductor component 21, fluoride ions 28 formed between the conductive elements 22, 32 and the electrical connection pad 200, and a package formed on the carrier 20 and the conductive elements 22, 32 Colloid 23.

所述之承載件20中，其形成該電性連接墊200之材質係為鋁材。 In the carrier 20, the material forming the electrical connection pad 200 is aluminum.

所述之半導體元件21係具有複數電極墊210，且形成該電極墊210之材質係為鋁材。 The semiconductor element 21 has a plurality of electrode pads 210, and the material forming the electrode pads 210 is aluminum.

所述之導電元件22,32係電性連接該電極墊210與該電性連接墊200。於一實施例中，該導電元件22係為銅線；於另一實施例中，該導電元件32係為銅凸塊。於一實施例 中，該導電元件22,32與該電極墊210及該電性連接墊200之間係產生介面合金共化物25，例如，鋁/銅合金化合物。 The conductive elements 22, 32 are electrically connected to the electrode pad 210 and the electrical connection pad 200. In one embodiment, the conductive element 22 is a copper wire; in another embodiment, the conductive element 32 is a copper bump. In an embodiment An interface alloy 25, such as an aluminum/copper alloy compound, is formed between the conductive elements 22, 32 and the electrode pads 210 and the electrical connection pads 200.

所述之氟離子28復形成於該導電元件22,32與該電極墊210之間，亦可以氟化鋁(AlF3)之形式存在。 The fluoride ions 28 are formed between the conductive elements 22, 32 and the electrode pads 210, and may also exist in the form of aluminum fluoride (AlF 3 ).

所述之封裝膠體23係包覆該半導體元件21。於一實施例中，該封裝膠體23中含有氯離子230，致使氯化鋁(AlCl3)形成於該些電極墊210與該些電性連接墊200上，但其含量少於氟化鋁之含量。 The encapsulant 23 covers the semiconductor element 21. In one embodiment, the encapsulant 23 contains chloride ions 230, such that aluminum chloride (AlCl 3 ) is formed on the electrode pads 210 and the electrical connection pads 200, but the content thereof is less than that of aluminum fluoride. content.

綜上所述，本發明之半導體封裝件及其製法，主要藉由添加氟離子以形成氟化鋁，且氟化鋁不會氧化成氧化鋁，因而能減少該氯化鋁之含量，以有效降低氧化鋁之形成量，故於含有水氣的環境下能大幅減緩氯離子腐蝕介面合金共化物之速率，因而能提高抗腐蝕性之功效，以防止半導體封裝件發生電性連接斷路。 In summary, the semiconductor package of the present invention and the method of manufacturing the same, mainly by adding fluoride ions to form aluminum fluoride, and the aluminum fluoride is not oxidized to alumina, thereby reducing the content of the aluminum chloride to effectively By reducing the amount of alumina formed, the rate of corrosion of the chloride alloy interface alloy can be greatly slowed down in a water vapor-containing environment, thereby improving the corrosion resistance and preventing electrical connection of the semiconductor package.

上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

2‧‧‧半導體封裝件 2‧‧‧Semiconductor package

20‧‧‧承載件 20‧‧‧Carrier

200‧‧‧電性連接墊 200‧‧‧Electrical connection pads

21‧‧‧半導體元件 21‧‧‧Semiconductor components

210‧‧‧電極墊 210‧‧‧electrode pads

22‧‧‧導電元件 22‧‧‧Conductive components

23‧‧‧封裝膠體 23‧‧‧Package colloid

28‧‧‧氟離子 28‧‧‧Fluoride

Claims (15)

一種半導體封裝件，係包括：承載件，係具有複數電性連接墊；半導體元件，係設於該承載件上，該半導體元件具有複數電極墊，且形成該電極墊或該電性連接墊之材質係為鋁材；複數導電元件，係電性連接該電極墊與該電性連接墊；氟離子，係形成於該導電元件與該電極墊之間、或該導電元件與該電性連接墊之間；以及封裝膠體，係形成於該承載件與該些導電元件上。 A semiconductor package comprising: a carrier having a plurality of electrical connection pads; a semiconductor component disposed on the carrier, the semiconductor component having a plurality of electrode pads, and forming the electrode pad or the electrical connection pad The material is aluminum; a plurality of conductive elements are electrically connected to the electrode pad and the electrical connection pad; and fluorine ions are formed between the conductive element and the electrode pad, or the conductive element and the electrical connection pad And an encapsulant formed on the carrier and the conductive elements. 如申請專利範圍第1項所述之半導體封裝件，其中，該導電元件係為銅線或銅凸塊。 The semiconductor package of claim 1, wherein the conductive element is a copper wire or a copper bump. 如申請專利範圍第1項所述之半導體封裝件，其中，該導電元件與該電極墊及該電性連接墊之間係產生介面合金共化物。 The semiconductor package of claim 1, wherein an interface alloy is formed between the conductive element and the electrode pad and the electrical connection pad. 如申請專利範圍第1項所述之半導體封裝件，其中，該封裝膠體中含有氯離子。 The semiconductor package of claim 1, wherein the encapsulant contains chloride ions. 如申請專利範圍第4項所述之半導體封裝件，復包括氯化鋁，係形成於該些電極墊與該些電性連接墊上。 The semiconductor package of claim 4, comprising aluminum chloride, is formed on the electrode pads and the electrical connection pads. 如申請專利範圍第1項所述之半導體封裝件，其中，該氟離子係以氟化鋁的形式存在。 The semiconductor package of claim 1, wherein the fluoride ion is present in the form of aluminum fluoride. 一種半導體封裝件之製法，係包括：提供一具有複數電性連接墊之承載件； 設置至少一具有複數電極墊之半導體元件於該承載件上，且形成該電極墊或該電性連接墊之材質係為鋁材；形成氟離子於該些電極墊上或該些電性連接墊上；以複數導電元件電性連接該電極墊與該電性連接墊；以及形成封裝膠體於該承載件與該些導電元件上。 A method of fabricating a semiconductor package, comprising: providing a carrier having a plurality of electrical connection pads; Providing at least one semiconductor component having a plurality of electrode pads on the carrier, and forming the electrode pad or the electrical connection pad is made of aluminum; forming fluoride ions on the electrode pads or the electrical connection pads; Electrically connecting the electrode pad and the electrical connection pad with a plurality of conductive elements; and forming an encapsulant on the carrier and the conductive elements. 如申請專利範圍第7項所述之半導體封裝件之製法，其中，該導電元件係為銅線。 The method of fabricating a semiconductor package according to claim 7, wherein the conductive element is a copper wire. 一種半導體封裝件之製法，係包括：提供一具有複數電性連接墊之承載件、及至少一具有複數電極墊之半導體元件，且形成該電極墊或該電性連接墊之材質係為鋁材，又該些電極墊上或該些電性連接墊上具有氟離子；以複數導電元件設置該半導體元件於該承載件上，且該些導電元件電性連接該電極墊與該電性連接墊；以及形成封裝膠體於該承載件與該些導電元件上。 A method for manufacturing a semiconductor package, comprising: providing a carrier having a plurality of electrical connection pads; and at least one semiconductor component having a plurality of electrode pads, and forming the electrode pad or the electrical connection pad is made of aluminum And the electrode pads or the electrical connection pads have fluoride ions; the semiconductor elements are disposed on the carrier by a plurality of conductive elements, and the conductive elements are electrically connected to the electrode pads and the electrical connection pads; Forming an encapsulant on the carrier and the conductive elements. 如申請專利範圍第9項所述之半導體封裝件之製法，其中，該導電元件係為銅凸塊。 The method of fabricating a semiconductor package according to claim 9, wherein the conductive element is a copper bump. 如申請專利範圍第7或9項所述之半導體封裝件之製法，其中，該導電元件與該電極墊及該電性連接墊之間係產生介面合金共化物。 The method of fabricating a semiconductor package according to claim 7 or 9, wherein an interface alloy is formed between the conductive element and the electrode pad and the electrical connection pad. 如申請專利範圍第7或9項所述之半導體封裝件之製法，復包括以有機氟溶液清洗該電極墊或該電性連接墊，再殘留微量氟離子，以形成該氟離子。 The method for manufacturing a semiconductor package according to claim 7 or 9, further comprising cleaning the electrode pad or the electrical connection pad with an organic fluorine solution, and then residual a trace amount of fluoride ions to form the fluoride ion. 如申請專利範圍第7或9項所述之半導體封裝件之製法，復包括形成氟化鋁於該導電元件與該電極墊之間、或該導電元件與該電性連接墊之間。 The method of fabricating a semiconductor package according to claim 7 or 9, further comprising forming aluminum fluoride between the conductive element and the electrode pad, or between the conductive element and the electrical connection pad. 如申請專利範圍第7或9項所述之半導體封裝件之製法，其中，該封裝膠體中含有氯離子。 The method of fabricating a semiconductor package according to claim 7 or 9, wherein the encapsulant contains chloride ions. 如申請專利範圍第14項所述之半導體封裝件之製法，復包括形成氯化鋁於該些電極墊或該些電性連接墊上。 The method for fabricating a semiconductor package according to claim 14, further comprising forming aluminum chloride on the electrode pads or the electrical connection pads.
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