TW201420249A - Laser processing method and laser processing device - Google Patents
Laser processing method and laser processing device Download PDFInfo
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- TW201420249A TW201420249A TW102123572A TW102123572A TW201420249A TW 201420249 A TW201420249 A TW 201420249A TW 102123572 A TW102123572 A TW 102123572A TW 102123572 A TW102123572 A TW 102123572A TW 201420249 A TW201420249 A TW 201420249A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
本發明係關於一種雷射加工方法及雷射加工裝置,尤其係關於一種沿脆性材料基板表面之交叉之第1及第2加工預定線照射雷射光,而於脆性材料基板表面形成複數條溝槽之雷射加工方法及用於實施該方法之雷射加工裝置。 The present invention relates to a laser processing method and a laser processing apparatus, and more particularly to a method of irradiating laser light along first and second planned lines intersecting the surface of a brittle material substrate, and forming a plurality of grooves on the surface of the brittle material substrate. Laser processing method and laser processing apparatus for carrying out the method.
作為電子零件材料而使用之矩形玻璃係藉由沿相互正交之方向分斷作為母材之一片較大之基板(玻璃板)而獲得。作為分斷方法,廣泛進行有如下方法:使刀輪等壓接滾動而形成溝槽後,自垂直方向沿形成之溝槽對基板施加外力,從而分斷基板。 The rectangular glass used as the material of the electronic component is obtained by dividing a substrate (glass plate) which is a large base material in the direction orthogonal to each other. As a breaking method, there is a method in which a groove is formed by rolling a cutter wheel or the like to form a groove, and an external force is applied to the substrate from a groove formed in a vertical direction to separate the substrate.
再者,於專利文獻1中,亦提出有如下方法:沿相互正交之加工預定線對基板表面照射雷射光,沿各加工預定線形成溝槽後,對基板施加外力從而進行分斷。 Further, Patent Document 1 proposes a method of irradiating a surface of a substrate with laser light along a line to be orthogonal to each other, forming a groove along each planned line, and then applying an external force to the substrate to perform division.
而且,於專利文獻2中,揭示有另一雷射加工方法。於該方法中,藉由沿加工預定線照射脈衝雷射光而對基板表面進行燒蝕加工,與此同時,使利用燒蝕加工而形成之溝槽之表面熔融,從而減少因燒蝕加工而產生之微龜裂。利用這種方法,於基板形成溝槽。 Further, Patent Document 2 discloses another laser processing method. In this method, the surface of the substrate is ablated by irradiating the pulsed laser light along the planned line, and at the same time, the surface of the groove formed by the ablation process is melted, thereby reducing the occurrence of ablation processing. The micro crack. With this method, a groove is formed in the substrate.
[專利文獻1]日本特開2012-31035號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2012-31035
[專利文獻2]日本特開2010-274328號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-274328
於專利文獻1所示之方法中,需要於兩條加工預定線交叉之部分之四個角部分別設置反射構件,導致加工步驟變得繁雜。 In the method disclosed in Patent Document 1, it is necessary to provide a reflecting member at each of the four corner portions of the portion where the two processing lines intersect, which causes the processing steps to become complicated.
再者,亦可使用專利文獻2所示之方法形成兩條正交之溝槽(以下記為「交叉刻劃」)。然而,於該情形時,當形成第1方向之溝槽後,形成第2方向之溝槽時,容易於溝槽交叉部分附近產生加工不良。 Further, two orthogonal grooves (hereinafter referred to as "cross scribe") can be formed by the method described in Patent Document 2. However, in this case, when the groove in the first direction is formed after the groove in the first direction is formed, it is easy to cause a machining failure in the vicinity of the groove intersection portion.
具體而言,當形成第2方向之溝槽時,存在由於雷射光之照射所產生之熱影響,而於第1方向之溝槽中產生龜裂,或於交點部基板(玻璃)固著而產生分斷不良之情形。再者,於第2方向之溝槽之分斷面之角部容易產生碎屑(凹凸)。 Specifically, when the groove in the second direction is formed, there is a thermal influence due to the irradiation of the laser light, and a crack occurs in the groove in the first direction or is fixed to the intersection portion substrate (glass). A situation in which the break is bad. Further, debris (concavity and convexity) is likely to occur at the corner portion of the cross section of the groove in the second direction.
因此,例如,需要將作為後續步驟之第2方向之溝槽形成時之雷射光之輸出設定為比第1方向之溝槽形成時低等控制。然而,根據基板之種類,存在若使雷射光之輸出降低至不會產生缺陷或分斷不良之程度,則會無法分斷等問題。因此,交叉刻劃時之雷射光之條件設定非常困難。 Therefore, for example, it is necessary to set the output of the laser light when the groove in the second direction as the subsequent step is formed to be lower than the case where the groove in the first direction is formed. However, depending on the type of the substrate, if the output of the laser light is reduced to such an extent that no defect or breakage is caused, the problem cannot be broken. Therefore, the condition setting of the laser light at the time of cross scribing is very difficult.
本發明之課題在於能夠利用簡單步驟於不產生分斷不良之情形時確實地分斷基板。 An object of the present invention is to enable a substrate to be reliably separated by a simple step without causing a breakage.
本發明之第1方面中之雷射加工方法係沿脆性材料基板表面之交叉之第1及第2加工預定線照射雷射光,而於脆性材料基板表面形成複數條溝槽之方法,且包含第1步驟及第2步驟。第1步驟為沿第1加工 預定線照射脈衝雷射光而於脆性材料基板形成第1方向之溝槽。第2步驟為沿第2加工預定線照射脈衝雷射光,並且於與第1方向之溝槽交叉之部分停止脈衝雷射光之照射,而於脆性材料基板形成第2方向之溝槽。 The laser processing method according to the first aspect of the present invention is a method of irradiating laser light along the first and second planned lines intersecting the surface of the brittle material substrate, and forming a plurality of grooves on the surface of the brittle material substrate, and including 1 step and 2 steps. The first step is to process along the first The predetermined line irradiates the pulsed laser light to form a groove in the first direction on the brittle material substrate. In the second step, the pulsed laser light is irradiated along the second planned line, and the irradiation of the pulsed laser light is stopped in a portion intersecting the groove in the first direction, and the groove in the second direction is formed on the brittle material substrate.
此處,當形成第2方向之溝槽時,於與先形成之第1方向之溝槽交叉之部分停止脈衝雷射光之照射。因此,於交叉之部分及其附近不易產生因熱影響而造成之龜裂或碎屑等缺陷。再者,能夠於相同之雷射光之照射條件下加工第1及第2方向之溝槽,使加工變得容易。而且可形成適當之深度之溝槽,而於後續步驟中可容易地分斷基板。 Here, when the groove in the second direction is formed, the irradiation of the pulsed laser light is stopped in a portion intersecting the groove in the first direction formed first. Therefore, defects such as cracks or chips due to heat influence are less likely to occur in and around the intersection. Further, the grooves in the first and second directions can be processed under the same irradiation conditions of the laser light, and the processing can be facilitated. Moreover, a groove of a suitable depth can be formed, and the substrate can be easily separated in a subsequent step.
本發明之第2方面中雷射加工方法係於第1方面之方法中,於第2步驟中,於第1方向之溝槽寬度內實施脈衝雷射光之照射停止及照射重新開始。 In the laser processing method according to the first aspect of the invention, in the method of the first aspect, in the second step, the irradiation of the pulsed laser light is stopped and the irradiation is restarted in the groove width of the first direction.
此處,當形成第2方向之溝槽時,若於未形成有第1方向之溝槽之未加工部分進行脈衝雷射光之照射停止及照射重新開始,則停止脈衝雷射光之照射之位置及重新開始之位置附近容易產生龜裂,導致製品之不良率變高。 Here, when the groove in the second direction is formed, if the irradiation of the pulsed laser light is stopped and the irradiation is restarted in the unprocessed portion where the groove of the first direction is not formed, the position of the irradiation of the pulsed laser light is stopped. Cracks are likely to occur near the restarting position, resulting in a high defect rate of the product.
因此,於該第2方面之方法中,於已經形成之第1方向之溝槽寬度內停止及重新開始脈衝雷射光之照射。由此,可抑制於製品部分產生龜裂等缺陷。 Therefore, in the method of the second aspect, the irradiation of the pulsed laser light is stopped and restarted in the groove width of the first direction which has been formed. Thereby, it is possible to suppress defects such as cracks in the product portion.
本發明之第3方面中之雷射加工方法係於第2方面之方法中,於第2步驟中,隔著第1方向之溝槽之中心而於第1方向之溝槽寬度之62%以上94%以下之範圍內停止雷射光之照射。 A laser processing method according to a third aspect of the invention is the method of the second aspect, wherein in the second step, the width of the groove in the first direction is 62% or more across the center of the groove in the first direction The irradiation of the laser light is stopped within a range of 94% or less.
此處,可進一步抑制兩方向之溝槽之交叉部分附近之缺陷。 Here, defects near the intersection of the grooves in both directions can be further suppressed.
本發明之第4方面中之雷射加工方法係於第1至第3方面中任一項之方法中,於第1步驟及第2步驟中,利用脈衝雷射光對脆性材料基板進行燒蝕加工,同時使加工部熔融而形成第1及第2方向之溝槽。 The laser processing method according to any one of the first to third aspects of the present invention, wherein the brittle material substrate is ablated by pulsed laser light in the first step and the second step At the same time, the processed portion is melted to form grooves in the first and second directions.
此處,利用脈衝雷射光而對基板進行燒蝕加工,同時使加工部熔融而於基板表面形成第1及第2方向之溝槽。於這種加工方法中,由於對溝槽之附近進行加熱,因此容易產生因熱影響而造成之缺陷。 Here, the substrate is ablated by pulsed laser light, and the processed portion is melted to form grooves in the first and second directions on the surface of the substrate. In this processing method, since the vicinity of the trench is heated, defects due to heat are easily generated.
因此,於這種加工方法中,藉由採用本發明之方法,而可有效地抑制因熱影響而產生之缺陷。 Therefore, in such a processing method, defects caused by heat influence can be effectively suppressed by employing the method of the present invention.
本發明之第5方面中之雷射加工裝置係沿脆性材料基板表面之交叉之第1及第2加工預定線照射雷射光,而於脆性材料基板表面形成複數條溝槽之裝置。該加工裝置具備雷射光照射機構、移動機構、及加工控制部。雷射光照射機構具有使脈衝雷射光振盪之雷射振盪器、及使經振盪之脈衝雷射光聚光並進行照射之光學系統。移動機構使雷射光照射機構沿脆性材料基板表面之加工預定線相對移動。加工控制部控制雷射光照射機構及移動機構而於脆性材料基板形成交叉之溝槽。再者,加工控制部具有第1功能與第2功能。第1功能沿第1加工預定線照射脈衝雷射光而於脆性材料基板形成第1方向之溝槽。第2功能沿第2加工預定線照射脈衝雷射光,並且於與第1方向之溝槽交叉之部分停止脈衝雷射光之照射,而形成脆性材料基板之第2方向之溝槽。 A laser processing apparatus according to a fifth aspect of the present invention is characterized in that a laser beam is irradiated along the first and second planned lines intersecting the surface of the brittle material substrate, and a plurality of grooves are formed on the surface of the brittle material substrate. The processing apparatus includes a laser beam irradiation mechanism, a moving mechanism, and a processing control unit. The laser light irradiation mechanism has a laser oscillator that oscillates the pulsed laser light, and an optical system that condenses and oscillates the oscillated pulsed laser light. The moving mechanism relatively moves the laser light irradiation mechanism along a planned line of the surface of the brittle material substrate. The processing control unit controls the laser light irradiation mechanism and the moving mechanism to form a groove that intersects the brittle material substrate. Furthermore, the machining control unit has a first function and a second function. The first function irradiates the pulsed laser light along the first planned line to form a groove in the first direction on the brittle material substrate. The second function irradiates the pulsed laser light along the second planned line and stops the irradiation of the pulsed laser light at a portion intersecting the groove in the first direction to form a groove in the second direction of the brittle material substrate.
如上所述,於本發明,能夠利用簡單步驟於不產生分斷不良之情形下確實地分斷基板。 As described above, in the present invention, it is possible to surely separate the substrate without a break failure by a simple procedure.
1‧‧‧雷射振盪器 1‧‧‧Laser oscillator
2‧‧‧反射鏡機構 2‧‧‧Mirror mechanism
3‧‧‧透鏡機構 3‧‧‧Lens mechanism
4‧‧‧XY平台 4‧‧‧XY platform
5‧‧‧基板 5‧‧‧Substrate
10‧‧‧控制部 10‧‧‧Control Department
11‧‧‧雷射控制部 11‧‧‧Road Control Department
12‧‧‧移動控制部 12‧‧‧Mobile Control Department
圖1係用於實施本發明之加工方法之雷射加工裝置之概略構成圖。 Fig. 1 is a schematic block diagram of a laser processing apparatus for carrying out the processing method of the present invention.
圖2係示意地表示本發明之一實施形態中之燒蝕加工之圖。 Fig. 2 is a view schematically showing ablation processing in an embodiment of the present invention.
圖3係表示脈衝雷射光之控制之時序圖例之圖。 Fig. 3 is a view showing a timing chart of control of pulsed laser light.
圖4係表示利用現有之雷射加工方法來進行交叉刻劃之情形時之基板表面及分斷面之照片。 Fig. 4 is a photograph showing the surface of the substrate and the cross-section when the cross-scouring is performed by the conventional laser processing method.
圖5係表示利用現有及本發明之一實施形態中之雷射加工方法來進行交叉刻劃之情形時之基板表面之照片。 Fig. 5 is a photograph showing the surface of the substrate when cross-scouring is performed by the laser processing method according to the prior art and the embodiment of the present invention.
圖6係表示利用現有及本發明之一實施形態中之雷射加工方法來進行交叉刻劃之情形時之分斷面之照片。 Fig. 6 is a photograph showing a cross section of a case where cross-scouring is performed by a laser processing method according to an embodiment of the present invention.
圖7係表示於最佳條件下進行交叉刻劃之情形時之基板表面及分斷面之照片。 Fig. 7 is a photograph showing the surface of the substrate and the cross-section when the cross-scouring is performed under optimum conditions.
圖8係表示脈衝雷射光之控制例之示意圖。 Fig. 8 is a view showing an example of control of pulsed laser light.
將本發明之一實施形態中之雷射加工裝置示於圖1。該雷射加工裝置具備雷射振盪器1、反射鏡機構2、透鏡機構3、及XY平台4。由雷射振盪器1、反射鏡機構2、及透鏡機構3而構成雷射光照射機構,再者,由XY平台而構成移動機構。再者,該雷射加工裝置具有包含雷射控制部11及移動控制部12之控制部10。雷射控制部11控制雷射光之照射及輸出等加工條件。移動控制部12控制XY平台4之移動。 A laser processing apparatus according to an embodiment of the present invention is shown in Fig. 1. The laser processing apparatus includes a laser oscillator 1, a mirror mechanism 2, a lens mechanism 3, and an XY stage 4. The laser oscillator 1, the mirror mechanism 2, and the lens mechanism 3 constitute a laser light irradiation means, and further, a moving mechanism is constituted by an XY stage. Further, the laser processing apparatus includes a control unit 10 including a laser control unit 11 and a movement control unit 12. The laser control unit 11 controls processing conditions such as irradiation and output of laser light. The movement control unit 12 controls the movement of the XY stage 4.
雷射振盪器1使脈衝雷射光振盪。該雷射振盪器1若為YAG雷射、IR雷射等眾所周知之脈衝雷射光之振盪器,則並無特別限定。根據加工之脆性材料基板(以下僅稱為「基板」)5之材質,適當選擇可進行燒蝕加工之波長之雷射即可。 The laser oscillator 1 oscillates the pulsed laser light. The laser oscillator 1 is not particularly limited as long as it is a well-known pulsed laser oscillator such as a YAG laser or an IR laser. The laser of the wavelength at which the ablation process can be performed can be appropriately selected according to the material of the processed brittle material substrate (hereinafter simply referred to as "substrate") 5.
反射鏡機構2與透鏡機構3共同形成聚光光學機構,以可自大致鉛垂方向對基板5照射脈衝雷射光之方式,變更脈衝雷射光之行進方向。作為反射鏡機構2,可使用一個或多個鏡面,亦可利用稜鏡、繞射光柵 等。 The mirror mechanism 2 and the lens mechanism 3 together form a collecting optical mechanism for changing the traveling direction of the pulsed laser light by irradiating the substrate 5 with pulsed laser light in a substantially vertical direction. As the mirror mechanism 2, one or more mirror surfaces can be used, and a 稜鏡, diffraction grating can also be used. Wait.
透鏡機構3使脈衝雷射光聚光。更詳細而言,該透鏡機構3根據基板5之厚度,調整使脈衝雷射光聚光之位置即焦點位置之上下方向之位置。該焦點位置之調整可藉由交換透鏡機構3之透鏡來進行調整,亦可利用未圖示之致動器變更透鏡機構3之上下方向之位置來進行調整。 The lens mechanism 3 condenses the pulsed laser light. More specifically, the lens mechanism 3 adjusts the position at which the focus position of the pulsed laser light is concentrated, that is, the position in the up-down direction, based on the thickness of the substrate 5. The adjustment of the focus position can be adjusted by exchanging the lens of the lens mechanism 3, or can be adjusted by changing the position of the lens mechanism 3 in the up-and-down direction by an actuator (not shown).
XY平台4係載置成為分斷之對象之玻璃基板等應加工之基板5之載台,可沿相互正交之X方向及Y方向移動。利用移動控制部12來控制該XY平台4以規定之沿速度X方向及Y方向移動,由此可自如地變更載置於XY平台4上之基板5與脈衝雷射光之相對位置。通常為使XY平台4移動,從而使脈衝雷射光沿形成於基板5之表面之刻劃溝槽6之加工預定線移動。再者,加工時之XY平台4之移動速度係由移動控制部12控制。 The XY stage 4 mounts a stage on which the substrate 5 to be processed, such as a glass substrate to be cut, is placed, and is movable in the X direction and the Y direction orthogonal to each other. The movement control unit 12 controls the XY stage 4 to move in the speed X direction and the Y direction in a predetermined manner, thereby freely changing the relative position of the substrate 5 placed on the XY stage 4 and the pulsed laser light. Typically, the XY stage 4 is moved to move the pulsed laser light along a planned line of scribed grooves 6 formed on the surface of the substrate 5. Further, the moving speed of the XY stage 4 at the time of processing is controlled by the movement control unit 12.
圖2表示利用脈衝雷射光進行之燒蝕加工之一例。如該圖所示,自雷射振盪器1出射之脈衝雷射光利用透鏡機構3而於基板5之上表面附近聚光。當脈衝雷射光被吸收時,如圖2(a)所示,基板5之焦點位置附近被加熱。 Fig. 2 shows an example of ablation processing by pulsed laser light. As shown in the figure, the pulsed laser light emitted from the laser oscillator 1 is collected by the lens mechanism 3 near the upper surface of the substrate 5. When the pulsed laser light is absorbed, as shown in Fig. 2(a), the vicinity of the focal position of the substrate 5 is heated.
於基板5之焦點位置附近之溫度超過基板5之沸點之情形時,如圖2(b)所示,於超過沸點之部分成分蒸發。另一方面,於稍微離開焦點位置之部分,存在未到達基板5之沸點但超過熔點之部分。當該部分如圖2(c)所示表面熔融,且因該後散熱而使溫度降低時,如圖2(d)所示,藉由固著而形成熔融痕。 When the temperature near the focal position of the substrate 5 exceeds the boiling point of the substrate 5, as shown in Fig. 2(b), a part of the component exceeding the boiling point evaporates. On the other hand, in the portion slightly away from the focus position, there is a portion which does not reach the boiling point of the substrate 5 but exceeds the melting point. When the portion is melted as shown in Fig. 2(c) and the temperature is lowered by the heat dissipation thereafter, as shown in Fig. 2(d), a melt mark is formed by fixation.
當利用如上之加工方法來形成刻劃溝槽時,若於未於刻劃溝槽形成熔融痕之條件下、即於抑制熱影響之條件下使用脈衝雷射光進行燒蝕加工,則容易沿刻劃溝槽產生缺陷。再者,於成為熔融過多之情形時, 會自刻劃溝槽產生龜裂。因此,需要設定脈衝雷射光之輸出或掃描速度等適當之條件而進行加工。 When the scribed groove is formed by the above processing method, if the ablation process is performed using pulsed laser light under the condition that the groove is not formed by the etched groove, that is, under the condition of suppressing the heat influence, it is easy to engrave Grooving creates defects. Furthermore, when it becomes too molten, Cracks will be generated by scratching the grooves. Therefore, it is necessary to perform processing by setting appropriate conditions such as the output of the pulsed laser light or the scanning speed.
於對基板5沿相互正交之X方向及Y方向形成刻劃溝槽之情形時,首先,使脈衝雷射光聚光而照射於基板5之表面。然後,沿X方向之加工預定線掃描該脈衝雷射光(以下將該步驟記為「1st刻劃」)。由此,沿X方向之加工預定線形成刻劃溝槽。其次,於與X方向之加工相同之條件下,沿Y方向之加工預定線掃描脈衝雷射光(以下將該步驟記為「2nd刻劃」)。此時,於形成有X方向之刻劃溝槽之溝槽寬度內,以規定期間使脈衝雷射光之照射停止。如圖3之時序圖所示,於每個兩方向之溝槽之交點部分進行該脈衝雷射光之暫時性照射停止。於圖3中,(a)為脈衝雷射光之驅動用信號之波形,「H」表示脈衝雷射光之斷開(照射停止),「L」表示脈衝雷射光之接通(照射)。再者,(b)表示於每個交點雷射輸出為規定期間「0」。 In the case where the substrate 5 is formed with scribed grooves in the X direction and the Y direction orthogonal to each other, first, the pulsed laser light is condensed and irradiated onto the surface of the substrate 5. Then, the pulsed laser light is scanned along a planned line in the X direction (this step is referred to as "1st scribe" hereinafter). Thereby, the planned line along the X direction forms a scribed groove. Next, under the same conditions as the processing in the X direction, the pulsed laser light is scanned in a predetermined line in the Y direction (hereinafter, this step is referred to as "2nd scribe"). At this time, the irradiation of the pulsed laser light is stopped for a predetermined period of time in the groove width in which the groove in the X direction is formed. As shown in the timing chart of Fig. 3, the temporary irradiation of the pulsed laser light is stopped at the intersection of the grooves in each of the two directions. In Fig. 3, (a) is the waveform of the driving signal for the pulsed laser light, "H" is the breaking of the pulsed laser light (the irradiation is stopped), and "L" is the switching (the irradiation) of the pulsed laser light. Furthermore, (b) shows that the laser output at each intersection is "0" for a predetermined period.
又,於進行X方向及Y方向之溝槽加工之情形時,對基板5使用脈衝雷射光進行燒蝕加工,同時對基板5施加熱影響而使加工部熔融,而形成溝槽。 Further, in the case of performing the groove processing in the X direction and the Y direction, the substrate 5 is ablated using pulsed laser light, and a heat influence is applied to the substrate 5 to melt the processed portion to form a groove.
於圖4中表示未進行脈衝雷射光之控制(照射停止及重新開始)而進行交叉刻劃之情形時之基板表面及分斷面之情形。脈衝雷射光之波長為266nm,平均輸出為7W,基板係厚度為0.3mm之OA-10(日本電氣玻璃公司製造)。再者,自圖中之2nd側起進行加工,加工寬度為34μm,加工深度為44μm。 Fig. 4 shows the surface of the substrate and the cross-section when the cross-scratching is performed without the control of the pulsed laser light (irradiation stop and restart). The pulsed laser light has a wavelength of 266 nm, an average output of 7 W, and a substrate thickness of 0.3 mm OA-10 (manufactured by Nippon Electric Glass Co., Ltd.). Further, processing was performed from the 2nd side in the drawing, the processing width was 34 μm, and the processing depth was 44 μm.
圖4(a)表示分斷前之基板表面,(b)表示分斷後之基板 表面,(c)表示1st刻劃側之分斷面,(d)表示2nd刻劃側之分斷面。 Figure 4 (a) shows the surface of the substrate before the break, and (b) shows the substrate after the break. On the surface, (c) shows a section of the 1st scored side, and (d) shows a section of the 2nd scored side.
根據該實驗1,於未進行脈衝雷射光之控制之情形時成為如下結果。 According to the experiment 1, when the control of the pulsed laser light was not performed, the following results were obtained.
.於1st側之溝槽(刻劃)產生龜裂。 . The groove on the 1st side (scratched) produces cracks.
.存在基板(玻璃)於交點部固著而產生分斷不良之情形。 . There is a case where the substrate (glass) is fixed at the intersection portion to cause a breakage failure.
.於2nd刻劃側之分斷面之角部產生碎屑。 . Debris is generated at the corner of the section of the 2nd scored side.
圖5表示未進行脈衝雷射光之暫時性照射停止之控制(以下僅記為「控制」)之情形(a)與進行控制之情形(b)下之基板表面之加工狀態。此處,自1st刻劃側起進行加工,於2nd刻劃時於交點部進行脈衝雷射光之控制。關於脈衝雷射光之條件、基板、加工寬度及深度,與實驗1相同。 Fig. 5 shows a state in which the control of the temporary irradiation stop of the pulsed laser light (hereinafter referred to simply as "control") and the processing state of the substrate surface under the control (b). Here, the processing is performed from the 1st scribing side, and the pulsed laser light is controlled at the intersection portion at the 2nd scribing. The conditions, substrate, processing width and depth of the pulsed laser light were the same as in Experiment 1.
又,於各圖中,所謂「指令值」係指於控制部10中指示之停止脈衝雷射光之照射之距離。該指令值所對應之實際之照射停止距離為使照射停止位置及照射開始位置分別變短脈衝聚光徑之1/2,結果成為較指令值變短相當於大致脈衝之聚光徑之距離。 Further, in each of the drawings, the "command value" refers to the distance of the irradiation of the stop pulse laser light instructed by the control unit 10. The actual irradiation stop distance corresponding to the command value is such that the irradiation stop position and the irradiation start position are shortened by 1/2 of the pulse condensing diameter, and as a result, the shorter the command value is, the distance corresponding to the condensing path of the approximate pulse.
根據圖5(b)可知,藉由進行脈衝雷射光之控制,於1st刻劃未產生龜裂。再者,當以指令值為50μm以上、即於未於1st刻劃上形成溝槽之未加工區域中進行脈衝雷射光之照射停止及重新開始時,加工線中斷,於2nd刻劃側產生碎片。 As can be seen from Fig. 5(b), no cracking occurred in the 1st scribing by the control of the pulsed laser light. Further, when the irradiation of the pulsed laser light is stopped and restarted in the unprocessed region where the groove is not formed in the 1st scratch by the command value of 50 μm or more, the processing line is interrupted, and the chip is generated on the 2nd scribing side. .
由以上可知,於溝槽之加工寬度為34μm之情形時,作為指令值需要設為40μm(實際之距離為32μm(實測))以下。 As described above, when the processing width of the groove is 34 μm, the command value needs to be 40 μm (the actual distance is 32 μm (actual measurement)) or less.
再者,圖6表示實驗2中之未進行脈衝雷射光之控制之情形(a)與進行控制之情形(b)下之分斷面之加工狀態。此處,比較地表示2nd刻劃側之分斷面。 Further, Fig. 6 shows the processing state of the cross-section under the case where the control of the pulsed laser light is not performed in the experiment 2 (a) and the case (b) in which the control is performed. Here, the cross section of the 2nd scribing side is comparatively shown.
根據圖6(b),於進行脈衝雷射光之控制之情形時,當以指令值為20μm以下進行加工時,於2nd刻劃側分斷面之角部產生碎屑。 According to Fig. 6(b), when the pulse laser light is controlled, when the command value is 20 μm or less, the chip is generated at the corner portion of the 2nd scribe side section.
由以上可知,於溝槽之加工寬度為34μm之情形時,作為指令值需要設為30μm(實際之距離為21μm(實測))以上。 As described above, when the processing width of the groove is 34 μm, it is necessary to set the command value to 30 μm (the actual distance is 21 μm (actual measurement)) or more.
於圖7中表示於最佳條件下執行脈衝雷射光之控制而進行加工之情形。 Fig. 7 shows a case where processing is performed by performing control of pulsed laser light under optimum conditions.
脈衝雷射光之波長為266nm,平均輸出為7W,脈衝雷射光之控制指令值(照射停止距離)為40μm(實際之距離為32μm)。基板係厚度為0.3mm之OA-10(日本電氣玻璃公司製造)。再者,自圖中之1st側起進行加工,加工寬度為34μm,加工深度為44μm。 The wavelength of the pulsed laser light is 266 nm, the average output is 7 W, and the control command value (irradiation stop distance) of the pulsed laser light is 40 μm (the actual distance is 32 μm). OA-10 (manufactured by Nippon Electric Glass Co., Ltd.) having a substrate thickness of 0.3 mm. Further, processing was performed from the 1st side in the drawing, the processing width was 34 μm, and the processing depth was 44 μm.
圖7(a)表示分斷前之基板表面,(b)表示分斷後之基板表面,(c)表示1st刻劃側之分斷面,(d)表示2nd刻劃側之分斷面。 Fig. 7(a) shows the surface of the substrate before the break, (b) shows the surface of the substrate after the division, (c) shows the cross section of the 1st scribed side, and (d) shows the cross section of the 2nd scribed side.
根據該等圖明顯可知,未觀察到因基板(玻璃)之固著或熱影響而產生之缺陷。 As is apparent from the above figures, defects due to adhesion or thermal influence of the substrate (glass) were not observed.
總結以上之實驗結果,可知以下情形。 Summarizing the above experimental results, the following situation can be known.
(1)當於經加工之刻劃溝槽以外之部分(未加工部分)停止或重新開始脈衝雷射光之照射時,會產生龜裂。 (1) Cracks may occur when a portion other than the scribed groove (unprocessed portion) stops or restarts the irradiation of the pulsed laser light.
(2)若指令值為50μm(實際之距離為45μm)以上,則於基板表面會產生碎片。再者,若指令值為20μm(實際之距離為9μm)以下,則於分斷面之角部會產生碎屑。因此,當1st刻劃之加工寬度(溝槽寬度)為34μm之情形時,需要將2nd刻劃側交點部之脈衝斷開之指令值設定為30μm以上40μm以下(實際之距離為21μm以上32μm以下)。 (2) If the command value is 50 μm (actual distance is 45 μm) or more, chips are generated on the surface of the substrate. Further, when the command value is 20 μm (actual distance is 9 μm) or less, debris is generated at the corner portion of the sectional section. Therefore, when the processing width (groove width) of the 1st scribe is 34 μm, it is necessary to set the command value of the pulse break of the 2nd scribe side intersection point to 30 μm or more and 40 μm or less (the actual distance is 21 μm or more and 32 μm or less). ).
將以上一般化,最佳為如圖8中示意地表示,停止2nd側之 脈衝雷射光之照射之區域於1st側之刻劃溝槽之溝槽寬度內,隔著溝槽之中心而設為1st側之加工寬度(溝槽寬度)之62%以上94%以下。 The above generalization, preferably as shown schematically in Fig. 8, stops the 2nd side The region irradiated by the pulsed laser light is 62% or more and 94% or less of the processing width (groove width) on the 1st side in the groove width of the scribed groove on the 1st side.
本發明並不限定於以上之實施形態,於不脫離本發明之範圍之情形時可進行各種變形或修正。 The present invention is not limited to the above embodiments, and various modifications and changes can be made without departing from the scope of the invention.
成為對象之基板並不限定於實驗例中所示之基板,對各種玻璃基板或其他脆性材料基板均可應用本發明。 The substrate to be used is not limited to the substrate shown in the experimental example, and the present invention can be applied to various glass substrates or other brittle material substrates.
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Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3370310B2 (en) * | 1999-06-18 | 2003-01-27 | 三星ダイヤモンド工業株式会社 | Scribe method using laser |
JP4634089B2 (en) * | 2004-07-30 | 2011-02-16 | 浜松ホトニクス株式会社 | Laser processing method |
WO2006013763A1 (en) * | 2004-08-06 | 2006-02-09 | Hamamatsu Photonics K.K. | Laser processing method and semiconductor device |
TW200633808A (en) * | 2004-12-28 | 2006-10-01 | Mitsuboshi Diamond Ind Co Ltd | Method for cutting brittle material substrate and substrate cutting system |
CN100536108C (en) * | 2005-11-16 | 2009-09-02 | 株式会社电装 | Semiconductor device and dicing method for semiconductor substrate |
JP2008153420A (en) * | 2006-12-18 | 2008-07-03 | Seiko Epson Corp | Dividing method of base, manufacturing method of drop discharge head, manufacturing method of semiconductor device, manufacturing method of substrate and manufacturing method of electro-optical device |
US8598490B2 (en) * | 2008-03-31 | 2013-12-03 | Electro Scientific Industries, Inc. | Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes |
JP5495511B2 (en) * | 2008-05-27 | 2014-05-21 | 株式会社ディスコ | Wafer division method |
JP5122378B2 (en) * | 2008-06-09 | 2013-01-16 | 株式会社ディスコ | How to divide a plate |
JP5155030B2 (en) * | 2008-06-13 | 2013-02-27 | 株式会社ディスコ | Method for dividing optical device wafer |
JP5395411B2 (en) * | 2008-11-20 | 2014-01-22 | 株式会社ディスコ | Wafer laser processing method |
JP2010274328A (en) * | 2009-04-30 | 2010-12-09 | Mitsuboshi Diamond Industrial Co Ltd | Laser beam machining method and laser beam machining device |
JP2011233641A (en) * | 2010-04-26 | 2011-11-17 | Disco Abrasive Syst Ltd | Laser processing method for plate-like object |
JP5554158B2 (en) * | 2010-06-28 | 2014-07-23 | 三星ダイヤモンド工業株式会社 | Cleaving method of brittle material substrate |
JP5597051B2 (en) * | 2010-07-21 | 2014-10-01 | 浜松ホトニクス株式会社 | Laser processing method |
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JP5536713B2 (en) * | 2011-05-19 | 2014-07-02 | 三星ダイヤモンド工業株式会社 | Processing method of brittle material substrate |
-
2012
- 2012-11-29 JP JP2012260984A patent/JP6035127B2/en not_active Expired - Fee Related
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2013
- 2013-07-02 TW TW102123572A patent/TWI587960B/en active
- 2013-08-08 KR KR1020130093914A patent/KR101866248B1/en active IP Right Grant
- 2013-09-04 CN CN201310397953.1A patent/CN103846554B/en not_active Expired - Fee Related
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TWI587960B (en) | 2017-06-21 |
JP2014105147A (en) | 2014-06-09 |
KR20140071220A (en) | 2014-06-11 |
JP6035127B2 (en) | 2016-11-30 |
CN103846554A (en) | 2014-06-11 |
KR101866248B1 (en) | 2018-06-11 |
CN103846554B (en) | 2018-02-09 |
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