JP2008153420A - Dividing method of base, manufacturing method of drop discharge head, manufacturing method of semiconductor device, manufacturing method of substrate and manufacturing method of electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a base dividing method of a base, a manufacturing method of a drop discharge head, a manufacturing method of a semiconductor device, a manufacturing method of a substrate, and a manufacturing method of an electro-optical device for restricting flaking of a processing object in the middle of process, without having to require new steps for restricting the flaking of a processing object in the middle of process or using a step with the risk damages to the processing object. <P>SOLUTION: In the base dividing method, a member is formed by dividing a base including a member region, in which two or more members are formed in zones, and a perimeter portion which surrounds member region. The base diving method includes a preparing processing step of performing division preparing process to the division scheduled face, which is separated when the base is divided into each member so that the strength of the division scheduled face becomes small, as compared with the peripheral portion, a peripheral portion removal step for removing the peripheral portion from the member region, and a division step for dividing the member region into members. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a base material dividing method for dividing a base material in which a plurality of members are partitioned into respective members, a method for manufacturing a droplet discharge head using the base material dividing method, a method for manufacturing a semiconductor device, The present invention relates to a method for manufacturing a substrate and a method for manufacturing an electro-optical device.

  2. Description of the Related Art Semiconductors that form individual chips having a semiconductor integrated circuit or the like by dividing a substrate or wafer on which a plurality of semiconductor integrated circuits or the like are partitioned at a boundary of the partitioned semiconductor integrated circuit or the like. There is known a method of dividing a substrate such as a wafer used for manufacturing an apparatus. In such a dividing method, pre-processing is performed so as to make a crack along the planned dividing line, and by applying a minute force, the split is performed using the crack or the like as a trigger. However, when sufficient pre-processing has not been performed, it is difficult to divide, and there is a problem that chips are chipped due to the occurrence of a dividing surface that deviates from the planned dividing line. On the other hand, when sufficient pre-processing is performed, the chip may be divided and separated only by the pre-processing, and there is a problem that the separated chip is dissipated in the manufacturing process.

  Patent Document 1 discloses a method of freezing and fixing a processing object in order to maintain a unified state without separating chips and the like even after sufficient pre-processing. Patent Literature 2 discloses a pressure-sensitive adhesive sheet and a method for attaching a workpiece to the pressure-sensitive adhesive sheet. Patent Document 3 discloses a method for attaching a workpiece to a jig for placing the workpiece through an adhesive sheet.

JP 2005-279901 A JP 2003-109916 A Japanese Patent Laid-Open No. 2003-258067

  However, in the method of Patent Document 1, the processed object may be frozen, and the processed object may become low temperature, or condensation may occur due to the low temperature. There existed a subject that it cannot apply to the division | segmentation of the processing target object which may be damaged by becoming low temperature or the influence of the adhering water | moisture content. In the methods of Patent Document 2 and Patent Document 3, when the divided chip is peeled off from the adhesive sheet or the like, depending on the problem that it is difficult to peel off, the peeling force applied to the chip and the adhesive force There is a problem that the chip is damaged due to chip cracking or chipping. Furthermore, since there is a possibility that the pressure-sensitive adhesive is attached to the peeled chip, it is necessary to perform another process for removing the pressure-sensitive adhesive, and there is a problem that the number of processes increases.

  The present invention has been made to solve the above-described problems, and may require a new process or damage the processing object in order to prevent the processing object from separating in the middle of the process. A base material dividing method, a droplet discharge head manufacturing method, a semiconductor device manufacturing method, and a substrate manufacturing capable of suppressing separation of a workpiece in the middle of a process without performing a certain process It is an object to realize a method and a method for manufacturing an electro-optical device.

  A base material dividing method according to the present invention is a base material dividing method in which a member region is formed by dividing a member region of a base material having a member region in which a plurality of members are partitioned and an outer peripheral portion surrounding the member region. The strength of the planned splitting surface is smaller than the strength of the base material around the planned splitting surface with respect to the planned splitting surface that is a part that is separated when the base material is split into individual members. A pre-separation process for performing pre-division machining, which is a process such as, an outer peripheral part removing process for separating and removing the outer peripheral part from the member area, and a dividing process for dividing the member area into members. And

  According to the base material dividing method according to the present invention, by executing the pre-division processing, the strength of the planned division surface between the members in the member region is reduced, so that the base material can be easily divided into individual members. . At this time, since the outer peripheral portion exists around the member region, the outer peripheral portion prevents the members in the member region from moving outward so that the base material is divided into individual members. Is suppressed. Thereby, it can suppress that a member isolate | separates in the middle of a process. By performing the outer peripheral portion removing step, it is possible to easily divide the base material into individual members by eliminating inhibition by the outer peripheral portion. By having the outer peripheral part removing step, it is possible to prevent the member from separating in the pre-processing step and to easily divide in the dividing step. Since another processing for suppressing the base material subjected to the pre-division processing from being separated into members is not required, another operation such as removal of the adhesive material for releasing the other processing is not necessary. It is unnecessary. Alternatively, it is not placed in a state that affects the quality of the member, eg exposed to low temperatures, by another process.

  In the present invention, the base material dividing method is a laser processing in which the pre-division processing in the pre-processing step forms a modified region in the vicinity of the planned division surface by condensing the laser light in the vicinity of the predetermined division surface. Preferably there is.

  According to this substrate dividing method, the substrate is processed before dividing by laser processing. Selection of the irradiation position of the laser light is easy, and it is possible to irradiate an arbitrary position on the substrate surface. Accordingly, it is possible to reliably perform the pre-processing on the planned division surface and not the outer peripheral portion. Note that the laser beam is condensed at one point if it is collected by a perfect optical element, but in reality, it is collected with a spread due to aberrations of the optical element, and the laser beam is modified by the collected laser beam. There is a region where a quality region can be formed. The vicinity of the division plane indicates the area.

  In the present invention, the base material dividing method is such that the pre-division processing in the pre-processing step condenses the laser light in the vicinity of the planned split surface inside the base material, so that Laser internal reforming processing in which a modified region is formed in the vicinity is preferable.

  According to this base material dividing method, the base material is processed before division by laser internal modification processing. In the laser internal reforming process, a modified region is formed inside the base material, so that no processing waste is produced. For this reason, since the part of a base material is not removed by the process before division | segmentation, a part of part surrounded by the outer peripheral part is not removed. From this, the state which can suppress that the member of a member area | region spreads outside by an outer peripheral part can be maintained more reliably compared with the processing method before division | segmentation which a processing waste comes out.

  In this invention, it is preferable that the division | segmentation method of a base material is a dicing process in which the pre-division process in a pre-process process forms the cut | interruption in a base material along a division | segmentation planned surface.

  According to this base material dividing method, the base material is processed before division by dicing using a grindstone or the like. In dicing, it is easy to adjust the cutting amount of a grindstone, etc., so the strength of the base material that has undergone pre-division processing is appropriately adjusted by appropriately adjusting the amount of the remaining base material in the groove. Can be adjusted.

  In the present invention, in the substrate dividing method, it is preferable that the pre-division processing in the pre-processing step is an etching process in which a groove along the planned division surface is formed by etching.

  According to this substrate dividing method, the substrate is processed before dividing by etching. In the etching process, the position to be etched can be easily selected, and an arbitrary position on the substrate surface can be etched. Accordingly, it is possible to reliably perform the pre-division processing on the planned division surface and not the outer peripheral portion.

  In the present invention, the base material dividing method is such that the outer peripheral portion removing step applies a force having a force component in a direction perpendicular to the surface of the base material to the outer peripheral portion, thereby dividing the outer peripheral portion and the member region. It is preferable that the outer peripheral portion is separated and removed from the member region by applying a bending stress to the planned surface.

  According to this base material dividing method, the outer peripheral portion is separated from the member region by applying a force to the outer peripheral portion to apply a bending stress to the planned split surface. In order to apply a force to the outer peripheral portion and cause a bending stress to act on the planned dividing surface, only the member region is fixed, and the force is applied to the outer peripheral portion that is not fixed. Since the outer periphery corresponds to a cantilever beam protruding from the member area, a large bending stress is applied to the planned split surface at the base of the cantilever beam by applying a small force to the outer periphery of the cantilever beam. The outer peripheral portion can be efficiently removed with a small force.

  In the present invention, the base material dividing method is such that the outer peripheral portion removing step applies a force having a force component in a direction parallel to the surface of the base material to the outer peripheral portion, thereby dividing the outer peripheral portion by the force, The step of separating the outer peripheral portion from the member region and removing the outer peripheral portion from the member region is preferably performed by applying a force to separate the portions sandwiching the planned split surface between the outer peripheral portion and the member region.

  According to this substrate dividing method, the outer peripheral portion is separated from the member region by a force that separates the portions sandwiching the planned dividing surface from each other. For this reason, since the possibility that the outer peripheral portion once separated is in contact with the member region is extremely small, the possibility that the member is damaged by the outer peripheral portion being in contact with the member region can be extremely reduced.

  In the present invention, the base material dividing method is such that the outer peripheral portion removing step applies a force having a force component in a direction perpendicular to the surface of the base material to the outer peripheral portion, thereby dividing the outer peripheral portion and the member region. It is preferable that the outer peripheral portion is separated and removed from the member region by applying a shear stress to the planned surface.

  According to this method of dividing the base material, separation occurs on the planned splitting surface due to the shear stress applied to the planned splitting surface. In order to mainly apply a shear stress to the planned splitting surface, it is necessary to apply a force substantially perpendicular to the substrate surface near the planned splitting surface. The proximity of the part to which the force is applied and the part to be deformed suppresses the possibility of unintentional chipping or cracking between the part to which the force is applied and the part to be deformed, thereby preventing the member from being chipped or cracked. Etc. can be prevented from occurring.

  In this invention, it is preferable that the division | segmentation method of a base material further has the cover arrangement | positioning process which arrange | positions the member area | region cover which covers a member area | region.

  According to this substrate dividing method, the member region is covered with the disposed member region cover. Thereby, adhesion of the fine fracture | rupture waste etc. accompanying the fracture | rupture at the time of removing an outer peripheral part to a member area | region can be prevented.

  In the present invention, the base material dividing method preferably further includes a step of performing pre-division processing on a part of the outer peripheral portion.

  According to this base material dividing method, since the strength of the outer peripheral portion is reduced by executing the pre-division processing on a part of the outer peripheral portion, when the pre-division processing is not executed on the outer peripheral portion. In comparison, the force required to sever the outer periphery is reduced. Thereby, it becomes easy to remove the outer peripheral portion separately from the member region.

  The substrate manufacturing method according to the present invention is characterized in that the mother substrate on which the substrate is partitioned is divided into substrates using the above-described substrate dividing method.

  According to the method for manufacturing a substrate according to the present invention, in the step of dividing the mother substrate on which the substrate is partitioned into individual substrates, a new step is performed in order to suppress separation of the workpiece in the middle of the step. The base material dividing method can be used that can prevent the processing object from being separated in the middle of the process without requiring processing or processing that may damage the processing object. As a result, in the process of dividing the mother substrate into substrates, the substrate is separated into the mother substrate in the middle of the process without requiring a new process or performing a process that may damage the substrate. It is possible to suppress the substrate from being damaged due to the above.

  A method of manufacturing a semiconductor device according to the present invention is a semiconductor device in which an integrated circuit having semiconductor elements and wirings constituting a semiconductor device is partitioned using the above-described substrate dividing method. It is characterized by being divided into chips.

  According to the method for manufacturing a semiconductor device according to the present invention, in the step of dividing the wafer into semiconductor chips corresponding to the individual semiconductor devices, a new method is provided to suppress separation of the workpiece in the middle of the step. A base material dividing method that can suppress the separation of the processing object in the middle of the process without using a process or performing a process that may damage the processing object is used. As a result, in the process of dividing the wafer into semiconductor chips, the wafer is separated into semiconductor chips in the middle of the process without requiring a new process or performing a process that may damage the semiconductor chip. It is possible to prevent the semiconductor chip from being damaged due to this.

  A manufacturing method of a droplet discharge head according to the present invention is characterized in that a mother head substrate on which a droplet discharge head is partitioned is divided into droplet discharge heads using the above-described substrate dividing method.

  According to the method for manufacturing a droplet discharge head according to the present invention, in the step of dividing the mother head substrate into individual droplet discharge heads, a new method is provided to suppress separation of the workpiece in the middle of the step. A base material dividing method that can suppress the separation of the processing object in the middle of the process without using a process or performing a process that may damage the processing object is used. As a result, in the process of dividing the mother head substrate into droplet discharge heads, a new process is not required, and the mother process can be performed in the middle of the process without performing a process that may damage the droplet discharge head. It is possible to prevent the droplet discharge head from being damaged due to the separation of the droplet discharge head from the head substrate.

  The electro-optical device manufacturing method according to the present invention is characterized in that the mother electro-optical substrate in which the electro-optical device is partitioned is divided into electro-optical devices by using the above-described substrate dividing method.

  According to the method for manufacturing an electro-optical device according to the present invention, in the step of dividing the mother electro-optical substrate into individual electro-optical devices, a new process is performed in order to suppress separation of the workpiece in the middle of the process. The base material dividing method can be used that can prevent the processing object from being separated in the middle of the process without requiring processing or processing that may damage the processing object. Accordingly, in the process of dividing the mother electro-optical substrate into the electro-optical device, a new process is not required, or a process that may damage the electro-optical device is performed. It can be suppressed that the electro-optical device is damaged due to the separation of the electro-optical device from the optical substrate.

  A method for manufacturing an electro-optical device according to the present invention is characterized in that a mother sub-substrate in which a sub-substrate constituting the electro-optical device is partitioned is divided into sub-substrates using the above-described base material dividing method.

  According to the method for manufacturing an electro-optical device according to the present invention, in the step of dividing the mother sub-substrate in which the sub-substrate constituting the electro-optical device is partitioned into individual sub-substrates, the workpiece is separated during the process. To prevent the processing object from separating in the middle of the process without requiring a new process or subjecting the processing object to damage. A method of dividing the substrate that can be used is used. As a result, in the process of dividing the mother sub-board into sub-boards, a new process is not required, or the sub-board is removed from the mother sub-board during the process without performing any processing that may damage the sub-board. It can be suppressed that the sub-substrate is damaged due to the separation of the substrate.

  An embodiment of a substrate dividing method, a droplet discharge head manufacturing method, a semiconductor device manufacturing method, a substrate manufacturing method, and an electro-optical device manufacturing method according to the present invention will be described below with reference to the drawings. To do. In the drawings used for the following description, the scale of each member and each layer is appropriately changed so that each member and each layer can be recognized.

(First embodiment)
As an example of a substrate dividing method, a substrate manufacturing method, and a semiconductor device manufacturing method, the present embodiment includes a semiconductor element and a wiring that configure a semiconductor device in a process of manufacturing a semiconductor chip that configures the semiconductor device. An example of a dividing method used in a process of dividing a wafer on which integrated circuits are partitioned into individual semiconductor chips will be described.

<Wafer configuration>
First, the configuration of the wafer 1A in which integrated circuits are partitioned will be described. An integrated circuit is formed on a silicon wafer using a semiconductor process. FIG. 1 is a plan view showing the shape of a wafer. As shown in FIG. 1, an integrated circuit having semiconductor elements and wirings constituting a semiconductor device is partitioned on the wafer 1A, and is surrounded by a virtual partition line 3 indicated by a two-dot chain line in FIG. An integrated circuit corresponding to one semiconductor device is formed in each chip portion 1a. 33 chip portions 1a are formed on the wafer 1A. The 33 chip portions 1 a are collectively referred to as a chip region 4, and the outer peripheral portion of the chip region 4 is referred to as an outer peripheral portion 6. The dividing line 3 at the boundary between the chip region 4 and the outer peripheral portion 6 is referred to as a boundary line 3a. The chip area 4 corresponds to a member area, and the wafer 1A corresponds to a base material.

<Laser processing equipment>
Next, the laser processing apparatus 10 used for dividing the wafer 1A in this embodiment will be described. FIG. 2 is a schematic diagram showing the configuration of the laser processing apparatus.

  As shown in FIG. 2, the laser processing apparatus 10 includes a laser light source 21, a dichroic mirror 22, a condenser lens 23, a Z-axis slide mechanism 24, an imaging device 29, a stage 20, and a rotation mechanism 25. , An X-axis slide mechanism 27, a Y-axis slide mechanism 26, and a machine base 28.

  The laser light source 21 is an Nd: YAG laser that uses, for example, a crystal obtained by doping yttrium-aluminum-garnet with neodymium as a laser medium, and the excitation method of the laser light source 21 is LD excitation. The laser light emitted from the laser light source 21 is reflected by the dichroic mirror 22 and condensed inside the workpiece W by the condenser lens 23. The condenser lens 23 is supported by a slide arm 24 a extending from the Z-axis slide mechanism 24, and the Z-axis slide mechanism 24 moves the condenser lens 23 relative to the workpiece W placed on the stage 20. The position of the laser beam condensing is moved in the thickness direction of the workpiece W (Z-axis direction in FIG. 2). The imaging device 29 is located on the opposite side of the condensing lens 23 with the dichroic mirror 22 in between, and takes an image of the workpiece W or the like.

  The machine base 28 is a frame that supports each mechanism constituting the laser processing apparatus 10. An X-axis slide base 27b constituting the X-axis slide mechanism 27 is fixed to the machine base 28, and the X-axis slider 27a constituting the X-axis slide mechanism 27 is slidable and fixable in the X-axis direction. The slide base 27b is engaged. The Y-axis slide base 26b constituting the Y-axis slide mechanism 26 is fixed to the X-axis slider 27a, and the Y-axis slider 26a constituting the Y-axis slide mechanism 26 is slidable and fixable in the Y-axis direction. The shaft slide base 26b is engaged. A rotation mechanism base 25b constituting the rotation mechanism 25 is fixed to the Y-axis slider 26a, and the rotation table 25a constituting the rotation mechanism 25 is rotatable about the Z axis so as to be rotatable. The base 25b is engaged. The X-axis slider 27a, the Y-axis slider 26a, and the rotation table 25a are driven by a servo motor (not shown) configured between the X-axis slide base 27b, the Y-axis slide base 26b, and the rotation mechanism base 25b, respectively. The

  The stage 20 is fixed to the rotary table 25a and is used for placing the workpiece W. The workpiece W placed on the stage 20 is sucked by, for example, a suction device configured on the stage 20 and fixed to the stage 20. The workpiece W fixed to the stage 20 can be rotated around the Z axis by the rotation mechanism 25, and the posture of the condenser lens 23 in the direction parallel to the X axis and the Y axis (plane direction) is set. Adjusted. Further, the workpiece W fixed to the stage 20 is moved in a plane direction parallel to the X axis and the Y axis by the X axis slide mechanism 27 and the Y axis slide mechanism 26, and the workpiece W is arbitrarily selected. Is moved to a position facing the condenser lens 23. The thickness direction of the workpiece W placed and fixed on the stage 20 is the Z-axis direction.

  The laser processing apparatus 10 includes a main computer 30 as a control unit that controls each of the above components. The main computer 30 includes an image processing unit 34 that processes image information captured by the imaging device 29 in addition to the CPU and various memories. The imaging device 29 incorporates a coaxial incident light source and a CCD (solid-state imaging device). Visible light emitted from the coaxial incident light source passes through the condenser lens 23 and is focused.

  The main computer 30 is connected to an input unit 35 for inputting data of various processing conditions used in laser processing and a display unit 36 for displaying various information during laser processing. A laser control unit 31 that controls the output, pulse width, and pulse period of the laser light source 21 and a lens control unit 32 that drives the Z-axis slide mechanism 24 to control the position of the condenser lens 23 in the Z-axis direction. It is connected. Further, a stage control unit 33 that controls a servo motor (not shown) that drives the rotation mechanism 25, the X-axis slide mechanism 27, and the Y-axis slide mechanism 26 is connected.

  The Z-axis slide mechanism 24 that moves the condensing lens 23 in the Z-axis direction has a built-in position sensor capable of detecting the moving distance, and the lens control unit 32 detects the output of the position sensor and collects the light. The position of the lens 23 in the Z-axis direction can be controlled. Therefore, if the condensing lens 23 is moved in the Z-axis direction so that the focus of the visible light emitted from the coaxial incident light source of the imaging device 29 is aligned with the surface of the workpiece W, the thickness of the workpiece W is measured. Is possible. Further, it is possible to adjust the condensing position of the condensing lens 23 to an arbitrary position from the surface of the workpiece W.

<Formation of modified region>
Here, the formation of the modified region 40 (see FIG. 4) by multiphoton absorption, which is an example of laser processing, will be described. Even if the workpiece W is made of a material that is transparent to the light applied thereto, absorption occurs when the photon energy hν is much larger than the absorption band gap Eg of the material. This absorption is called multiphoton absorption. When multiphoton absorption is caused to occur inside the workpiece W, the energy of the multiphoton absorption is converted into thermal energy, so that microcracks are formed inside the workpiece W. Alternatively, when the pulse width of the laser beam is extremely shortened to cause multiphoton absorption to occur inside the workpiece W, the energy of the multiphoton absorption is not converted into thermal energy, but the ionic valence change, crystallization, or A permanent structural change such as polarization orientation is induced to form a refractive index change region. In the present embodiment, these micro crack formation region and refractive index change region are referred to as a modified region 40.

  When the modified region 40 is formed by the pulsed laser beam, one modified region 40 is formed by one pulse of the laser beam. By forming the modified region 40 while moving the condensing position in the plane direction of the workpiece W, the modified region is arranged continuously or at a slight interval in the plane direction of the workpiece W. 40 rows are formed. This row of the modified regions 40 is hereinafter referred to as a modified layer 42 (see FIG. 4). The condensing position is moved in the thickness direction of the workpiece W, and the modified layer 42 is further formed in a position overlapping the formed modified layer 42 in the plane direction of the workpiece W, thereby improving the property. The layer 42 is laminated to form a region where the modified regions 40 are arranged in a plane. Hereinafter, the region in which the modified regions 40 are arranged in a plane is referred to as a modified zone 44 (see FIG. 4). Even if the applied force is a very small force, the workpiece W formed with the reforming zone 44 is cracked by the reforming zone 44 and is easily divided at the portion of the reforming zone 44. Is done.

<Division of wafer>
Next, a process of dividing the wafer 1A into individual semiconductor chips 1 (see FIG. 6B or FIG. 6C) using a laser scribing method using the laser processing apparatus 10 will be described. As described above, the wafer 1A has 33 sections of chip portions 1a corresponding to one semiconductor chip 1. A modified zone 44 is formed along the partition line 3 that is a boundary of the chip portion 1a (semiconductor chip 1) formed on the wafer 1A shown by a two-dot chain line in FIG. By applying a weak bending force or tensile force in the vicinity, the semiconductor chip 1 is separated by dividing at the portion of the modified zone 44. The semiconductor chip 1 corresponds to a member.

  FIG. 3 is a flowchart showing a process of dividing a wafer into individual semiconductor chips by a laser scribing method. FIG. 4 is a schematic cross-sectional view of a wafer showing a process of forming a modified zone on the wafer.

  In step S <b> 1 shown in FIG. 3, as a preparation stage for forming the modified zone 44, the wafer 1 </ b> A is set on the stage 20 and the direction of the partition line 3 is adjusted. First, the wafer 1A is fixed to the stage 20, and then the stage 20 is rotated around the Z axis by the rotation mechanism 25, so that one of the dividing lines 3 of the chip portions 1a formed on the wafer 1A is extended. The present direction is made to coincide with, for example, the Y-axis direction in FIG.

  Next, in step S2, the wafer 1A fixed to the stage 20 is moved in the X-axis direction by the X-axis slide mechanism 27, and one of the dividing lines 3 in which the extending direction coincides with the Y-axis direction is collected. It is set on the optical axis of the optical lens 23.

  Next, in step S <b> 3, the modified region 40 is formed along the partition line 3 set on the optical axis of the condenser lens 23. In order to form the modified zone 44 on substantially the entire cross section of the wafer 1A, first, as shown in FIG. 4A, the laser beam is applied to the surface opposite to the laser beam incident surface of the wafer 1A. The modified region 40 is formed by focusing light in the vicinity. The lens 23 a illustrated in FIG. 4 is an objective lens that constitutes the condenser lens 23. In parallel with the formation of the modified region 40, the Y-axis slide mechanism 26 moves the wafer 1A in the direction of arrow a to form a modified layer 42 in which the modified regions 40 are continuous or continuous. As described above, the laser light source 21 that is a laser light source is an LD-excited Nd: YAG laser. In the present embodiment, a third harmonic having a wavelength of 355 nm is used. The modified region 40 by the laser beam having a wavelength of 355 nm is a micro crack formation region in which micro cracks are formed.

  When the formation of the single modified layer 42 is completed, the condensing position is moved in the thickness direction of the wafer 1A, and the modified layer 42 is similarly formed at the position to thereby change the thickness direction of the wafer 1A. The modified layer 42 is laminated on the substrate. Finally, as shown in FIG. 4B, the laser beam is condensed near the laser beam incident surface of the wafer 1A to form the modified region 40, and the wafer 1A is moved in the direction of the arrow a. By moving, the modified layer 42 is formed in the vicinity of the incident surface, and as shown in FIGS. 4C and 4D, the modified zone 44 is formed on substantially the entire cross section of the wafer 1A.

  Next, in step S4 of FIG. 3, it is determined whether or not the modified zone 44 has been formed over substantially the entire cross section of the wafer 1A. If the formation of the reforming zone 44 has not been completed (NO in Step S4), the process returns to Step S3, and Steps S3 and S4 are repeated to form the reforming zone 44 by laminating the reforming layer 42. To do. If the formation of the modified zone 44 has been completed (YES in step S4), the process proceeds to step S5, and whether or not the modified zone 44 has been formed in all the partition lines 3 of the wafer 1A, that is, formation. It is determined whether or not the formation of all the reformed zones 44 to be performed has been completed.

  If the formation of all the reforming zones 44 has not been completed (NO in step S5), the process returns to step S2, and steps S2 to S5 are repeated to form the reforming zone 44. If all the reformed zones 44 have been formed (YES in step S5), the process proceeds to step S6. The processing with the laser beam for forming the modified zone 44 corresponds to the pre-division processing, and the step of forming the modified zone 44 on substantially the entire cross section of the wafer 1A corresponds to the pre-processing step.

  Here, the state in which the modified zone 44 is formed in all the dividing lines 3 of the wafer 1A will be described. FIG. 5 is a plan view of the wafer showing the positions of the modified zones formed on the wafer. In the wafer 1A shown in FIG. 5A, a modified zone 44 is formed in the parting line 3 of the chip part 1a as indicated by a broken line in the drawing. Each chip portion 1a is formed with a reforming zone 44 at the position of the surrounding partition line 3, and is formed at the position of the partition line 3 by applying a relatively moving force to the adjacent chip portion 1a. It can be easily divided at the portion of the reformed zone 44 that has been made. However, since the outer peripheral side of the chip region 4 in which the chip parts 1 a are aligned is surrounded by the outer peripheral part 6, the 33 chip parts 1 a are held in a state in which the outer peripheral part 6 is wrinkled. Yes. Accordingly, misalignment between the chip portions 1a is unlikely to occur except in a direction that is exactly perpendicular to the surface of the wafer 1A. Therefore, as shown in FIG. 5A, the wafer 1A on which the modified band 44 is formed is handled. However, the possibility that the chip portion 1a is easily separated is very small.

  In the wafer 1A shown in FIG. 5B, a modified zone 44 is also formed in the portion of the extension line 7 in addition to the wafer 1A shown in FIG. The reforming zone 44 in the portion of the extension line 7 is formed so as to be continuous with the reforming zone 44 formed in the portion of the boundary line 3a. Further, a portion where the modified region 40 is not formed is formed between the outer peripheral surface of the wafer 1A. Since the reforming zone 44 is formed in the portion of the extension line 7, the strength of the outer peripheral portion 6 is reduced, and therefore the outer peripheral portion 6 described later can be easily removed. Since there is a portion where the modified region 40 is not formed between the outer peripheral surface and the outer peripheral surface, the outer peripheral portion 6 is maintained at a strength sufficient to hold the 33 chip portions 1a.

  Next, in step S <b> 6 of FIG. 3, as shown in FIG. 6A, the wafer 1 </ b> A in which the modified band 44 is formed at the position of the partition line 3 is placed on the suction stage 51. FIG. 6A is a schematic diagram showing a wafer placed on the suction stage. The planar shape of the suction stage 51 is slightly smaller than the planar shape of the chip area 4, and the wafer 1 </ b> A is placed on the suction stage 51 so that the chip area 4 is placed on the suction stage 51. The suction stage 51 includes a suction port that communicates with a negative pressure device (not shown), and sucks and holds the mounted wafer 1A.

  Next, in step S7, as shown in FIG. 6A, the chip portion cover 52 is set on the wafer 1A. The planar shape of the chip part cover 52 is slightly smaller than the planar shape of the chip area 4, and the chip part cover 52 is formed so that the chip part cover 52 substantially covers the chip area 4 of the wafer 1 </ b> A. It is mounted on 1A. The chip portion cover 52 may be configured to press the wafer 1A only by its own weight, or may be configured to provide an urging mechanism and press the wafer 1A with the urging force of the urging mechanism.

  Next, in step S8, the outer peripheral portion 6 is removed. As shown in FIG. 6A, the wafer 1A sandwiched between the suction stage 51 and the chip portion cover 52 is subjected to steps S6 and S7. So that the outer peripheral portion 6 protrudes to the periphery. Since the planar shapes of the suction stage 51 and the chip portion cover 52 are slightly smaller than the planar shape of the chip region 4, the portion of the wafer 1 </ b> A protruding from above the suction stage 51 is close to the suction stage 51. A boundary line 3a exists. Therefore, when a force as indicated by an arrow b shown in FIG. 6A is applied to the protruding outer peripheral portion 6, the portion where the largest bending stress due to the applied force is supported by the suction stage 51 in the protruding portion. As a result, the same level of stress acts on the boundary line 3a. A reforming zone 44 is formed on the boundary line 3a, and even if a slight stress is applied, it is separated at the portion of the reforming zone 44. Therefore, the outer peripheral portion 6 outside the boundary line 3a is connected to the inner chip region. 4 is separated and removed.

  Next, in step S9, the chip portion cover 52 is removed from above the wafer 1A. Step S <b> 8 is executed and the outer peripheral portion 6 of the wafer 1 </ b> A is removed, and only the chip region 4 is sucked onto the suction stage 51. FIG. 6B is a plan view of the chip area, and FIG. 6C is a side view of the chip area placed on the suction stage. In the chip region 4, the outer peripheral portion 6 surrounding the periphery is removed, and the state held by the outer peripheral portion 6 is released. Accordingly, the chip portions 1a are connected to each other only via the dividing line 3 in which the modified zone 44 is formed, and can be easily divided on the dividing line 3.

  Next, in step S <b> 10, the chip portion 1 a of the chip region 4 from which the outer peripheral portion 6 is removed from the wafer 1 </ b> A is divided into individual semiconductor chips 1. As shown in FIG. 6 (c), the air tweezers 53 attracts one tip portion 1a and moves in the direction of the arrow c shown in FIGS. 6 (b) and 6 (c). The chip part 1 a adsorbed by the tweezers 53 is separated from the chip region 4. The chip portions 1a are connected to each other only through the dividing line 3 in which the reforming zone 44 is formed, and can be easily divided at the dividing line 3, so that they are easily separated by being adsorbed by the air tweezers 53. can do. Further, since the outer peripheral portion 6 is removed, the semiconductor chip 1 that can be moved in the direction of the arrow c is moved in a direction that does not come into contact with the chip portion 1a of the chip region 4 once. Can be separated. The process of dividing the chip area 4 into individual semiconductor chips 1 and dividing the wafer 1A into semiconductor chips 1 is completed.

<Removal of outer periphery>
Next, another example of the method for removing the outer peripheral portion 6 that is different from the above-described method will be described. FIG. 7 is a schematic diagram illustrating a method for removing the outer peripheral portion. FIG. 7A is a schematic plan view showing a method of applying a tensile force to the boundary line, and FIG. 7B is a schematic diagram showing a method by die cutting.

  In the method of applying a tensile force to the boundary line 3a, the outer peripheral portion 6 is clamped by a plurality of clamp terminals 54 as shown in FIG. Subsequently, the clamp terminal 54 is pulled in the direction of the arrow d substantially simultaneously. By pulling in the respective directions almost simultaneously, the outer peripheral portion 6 is pulled, and a tensile force is applied in the vicinity of the boundary line 3a, so that the outer peripheral portion 6 is separated from the chip region 4 and removed. A reforming zone 44 is formed on the boundary line 3a and can be easily separated by using the reforming zone 44 as a trigger. Therefore, the tip region 4 is sucked into the suction stage 51 by the force with which the tip region 4 is attracted to the suction stage 51. The outer peripheral portion 6 is separated from the chip region 4 and removed while holding on 51. In the wafer 1A shown in FIG. 7 (a), as described with reference to FIG. 5 (b), the modified band 44 is also formed in the portion of the extension line 7, and the outer peripheral portion 6 is drawn. It is easy. As shown in FIG. 7A, the direction in which the outer peripheral portion 6 is pulled by the clamp terminal 54 is such that the outer peripheral portion 6 once separated does not come into contact with the chip region 4.

  The method by die cutting is a method of applying a shearing force to the boundary line 3a as in the known press working. As shown in FIG. 7B, the chip is placed on the lower die 56 having a planar shape substantially equal to the planar shape of the chip region 4 so that the chip region 4 overlaps the lower die 56. The mounted wafer 1 </ b> A is fixed on the lower die 56 by pressing the chip region 4 with a holding die 57 having a planar shape substantially equal to the planar shape of the chip region 4. In this state, the inner planar shape moves the upper die 58 formed in a shape that forms an appropriate die gap with the planar shape of the lower die 56 in the direction of arrow e in FIG. A linear elasticity is applied in the vicinity of the boundary line 3a, and the outer peripheral portion 6 is removed. A reforming zone 44 is formed on the boundary line 3a and can be easily separated by using the reforming zone 44 as a trigger. Therefore, the upper die 58 and the lower die 56 have a precision similar to that of a mold used for known press working. Is not necessary.

Hereinafter, effects of the first embodiment will be described. According to the first embodiment, the following effects can be obtained.
(1) Since the outer peripheral side of the chip region 4 in which the chip parts 1 a are aligned is surrounded by the outer peripheral part 6, the chip part 1 a is held in a state in which the outer peripheral part 6 has been wrinkled. Accordingly, since the positional deviation between the chip portions 1a is difficult to occur except in a direction that is exactly perpendicular to the surface of the wafer 1A, even if the wafer 1A having the modified band 44 is handled, the chip portion 1a can be easily formed. Since the possibility of separation is very small, it is possible to suppress the chip portion 1a from being naturally separated before the dividing step.

  (2) By removing the outer peripheral part 6, the chip part 1a is connected to each other only through the modified zone 44 formed in the vicinity of the partition line 3, so that the chip part 1a is separated from the partition line. 3 can be easily divided, and can be easily separated by suction with the air tweezers 53.

(Second embodiment)
Next, a second embodiment of a substrate dividing method, a droplet discharge head manufacturing method, a semiconductor device manufacturing method, a substrate manufacturing method, and an electro-optical device manufacturing method according to the present invention will be described. In this embodiment, as an example of a substrate dividing method, a substrate manufacturing method, and a droplet discharge head manufacturing method, a mother head substrate on which a plurality of droplet discharge heads are formed is divided into individual droplet discharge heads. An example of the dividing method used in the process of performing will be described. Note that the laser processing apparatus 10 of this embodiment is substantially the same as the laser processing apparatus 10 described in the first embodiment, and the dividing method is substantially the same as the dividing method described in the first embodiment. Are the same. The configuration of the droplet discharge head and the configuration of the mother head substrate, which are different from the first embodiment, will be described.

<Droplet ejection head>
First, the configuration of the droplet discharge head 102 will be described with reference to FIG. FIG. 8 is an exploded perspective view schematically showing a state in which a part of the droplet discharge head is cut off. The droplet discharge head 102 is disposed on the nozzle plate 120, the flow path forming substrate 110, the sealing mounting substrate 125, the elastic sheet 140, the direct mounting driver 106 (see FIG. 10B) described later, and the flow path forming substrate 110. A piezoelectric actuator 104 formed of an elastic film 150 or the like is formed. In addition, the nozzle holes 121 arranged in a straight line are ejection openings for ejecting droplets, and all the nozzle holes 121 in one row eject droplets of the same color. Therefore, in order to eject droplets of different colors, a head having a plurality of rows of the nozzle holes 121 is formed. The droplet discharge head 102 has two rows of nozzle holes 121 (see FIG. 10B). When performing color printing, a head having more nozzle rows is formed, or a plurality of heads are used in parallel.

  The flow path forming substrate 110 is made of single crystal silicon having a predetermined plane orientation, and an elastic film 150 is formed on the upper surface and a mask film 151 is formed on the lower surface. The elastic film 150 is illustrated as being spaced from the flow path forming substrate 110, but is actually formed on the surface of the flow path forming substrate 110. The elastic film 150 is formed by thermally oxidizing the surface of the flow path forming substrate 110 and has elasticity because it has a thickness of 0.5 μm to 2 μm. On the other hand, the mask film 151 is separately formed by CVD or the like. Then, the flow path forming substrate 110 is patterned by anisotropic etching using the mask film 151 as a mask and utilizing the fact that the etching rate varies depending on the plane orientation. That is, by etching until the flow path forming substrate 110 reaches the elastic film 150, the liquid supply path 115, the pressure generation chamber 112, the communication portion 116, and the like are formed. Each of the pressure generating chambers 112 is connected to a communication portion 116 via a liquid supply path 115, and the communication portion 116 is connected to a reservoir portion 127 of a sealing mounting substrate 125 described later.

  An insulator film 155 having a film thickness of about 0.4 μm is formed on the elastic film 150, and each pressure generation chamber (actuator) having a film thickness of about 0.2 μm is formed on the insulator film 155. A lower electrode film 160 which is a common electrode, a ferroelectric thin film (piezoelectric layer) 170 having a thickness of about 1 μm (see FIG. 10B), and an upper electrode film 180 having a thickness of about 0.05 μm (see FIG. 10 (b)) are arranged in a stacked manner to constitute the piezoelectric element 103. The piezoelectric element 103 refers to a portion including the lower electrode film 160, the ferroelectric thin film 170, and the upper electrode film 180. The piezoelectric element 103 and the vibration plate that is displaced by driving the piezoelectric element are collectively referred to as a piezoelectric actuator 104. The diaphragm is a combination of the elastic film 150, the insulator film 155, and the lower electrode film 160.

  A nozzle plate 120 is bonded to the lower surface of the flow path forming substrate 110 through a mask film 151 and an adhesive (not shown). The nozzle plate 120 has one nozzle hole 121 for each pressure generating chamber 112, and discharges the liquid filled in the pressure chamber by the pressure generated in the pressure generating chamber 112 by the actuator described above. .

On the piezoelectric element 103 side of the flow path forming substrate 110, a sealing mounting substrate 125 having a space that does not impede its movement is bonded to an area facing the piezoelectric element 103 with an adhesive or the like. The sealing mounting substrate 125 is provided with a reservoir portion 127 that constitutes a reservoir serving as a common liquid material chamber for the pressure generating chambers 112. Further, a through portion 128 that penetrates the sealing mounting substrate 125 in the thickness direction is provided in a region between the piezoelectric element holding portion 126 and the reservoir portion 127 of the sealing mounting substrate 125. The lead electrodes 190 drawn out from the piezoelectric elements 103 are exposed in the penetrating portion 128 in the vicinity of the end portions. Then, the lead wire 108 is electrically connected to the direct driver 106 disposed on the sealing mounting substrate 125 with an adhesive or the like (see FIG. 10B).
Further, an elastic sheet 140 composed of a sealing film 141 and a fixing plate 142 is bonded onto such a sealing mounting substrate 125. The fixing plate 142 is made of a hard material such as metal. Since the region of the fixing plate 142 that faces the reservoir portion 127 is an opening 143 that is completely removed in the thickness direction, one surface of the reservoir portion 127 is formed only by the flexible sealing film 141. It is sealed. A supply hole (not shown) is continuously provided in the reservoir portion 127, and the liquid material is supplied to the reservoir portion 127 through the supply hole.

  With such a configuration, the droplet discharge head 102 discharges liquid droplets from the nozzle holes 121. More specifically, the interior is filled with a liquid material from the reservoir portion 127 communicating with an external tank (not shown) to the nozzle hole 121 in advance. Thereafter, a drive voltage is applied between the lower electrode film 160 and the upper electrode film 180 corresponding to the pressure generation chamber 112 in accordance with a drive signal from the direct driver 106 (see FIG. 10B). By applying a driving voltage, the elastic film 150, the insulator film 155, the lower electrode film 160 and the ferroelectric thin film 170 are flexibly deformed to increase the pressure in each pressure generating chamber 112, and from the nozzle hole 121. Liquid droplets are ejected.

<Mother head substrate>
Next, the configuration of the mother head substrate 102A will be described with reference to FIGS. FIG. 9 is a schematic view showing an aspect in which substrates on which elements constituting a part of the droplet discharge head are formed are stacked. A total of four substrates: a substrate A in which the nozzle plate 120 is partitioned, a substrate B in which the flow path forming substrate 110 is partitioned, a substrate C in which the sealing mounting substrate 125 is partitioned, and a substrate D in which the elastic sheet 140 is partitioned and formed. Are bonded with an adhesive or the like. In the mother head substrate 102A, the boundary between the substrate B and the substrate C is matched with the boundary between the flow path forming substrate 110 formed on the substrate B and the boundary between the sealing mounting substrate 125 formed on the substrate C. The substrates A and D are laminated and bonded, and the divided nozzle plates 120 or elastic sheets 140 are bonded to each other.

  FIG. 10 is a schematic diagram showing a mother head substrate. FIG. 10A is a plan view of the mother head substrate viewed from the nozzle plate side, and FIG. 10B is a cross-sectional view showing the mother head substrate including a direct driver. As shown in FIG. 10A, the nozzle plate 120 is bonded to the one surface of the mother head substrate 102A on the substrate B on which the flow path forming substrate 110 is partitioned. The periphery of the region where the nozzle plate 120 is bonded is an outer peripheral portion 114 which is a region where the flow path forming substrate 110 is not formed on the substrate B. As shown in FIG. 10B, the surface opposite to the one surface shown in FIG. 10A of the mother head substrate 102A is the elastic sheet 140 on the substrate C on which the sealing mounting substrate 125 is formed. It is glued. The periphery of the region where the elastic sheet 140 is bonded is an outer peripheral portion 124 in the substrate C where the sealing mounting substrate 125 is not formed. By dividing the mother head substrate 102A on the section screen 195 shown in FIG. 10B, the individual droplet discharge heads 102 are separated. A section screen 195 between the outer peripheral portion 114 or the outer peripheral portion 124 and the flow path forming substrate 110 or the sealing mounting substrate 125 is referred to as a boundary surface 195a. The droplet discharge head 102 corresponds to a member, and the mother head substrate 102A corresponds to a base material.

<Division of mother head substrate>
The mother head substrate 102 </ b> A is divided into individual droplet discharge heads 102 by a laser scribing method using the laser processing apparatus 10. The step of dividing the mother head substrate 102A into individual droplet discharge heads 102 is the same as the step of dividing the wafer 1A described in the first embodiment into individual semiconductor chips 1. The modified zone 44 is formed on the section screen 195 including the boundary surface 195a indicated by the two-dot chain line in FIG. 10B, and a weak bending force or tensile force is applied in the vicinity of the modified zone, thereby The droplet discharge heads 102 are separated by dividing into portions.

  When the modified zone 44 is formed on all the partition screens 195 of the mother head substrate 102A, it corresponds to the position along the periphery of the nozzle plate 120 shown in FIG. A reforming zone 44 is formed around the portion. In the portion corresponding to each droplet discharge head 102, a reforming zone 44 is formed at the position of the surrounding section screen 195, and if a relatively moving force is applied between the adjacent droplet discharge heads 102, It can be easily divided at the portion of the reforming zone 44 formed at the position of the section screen 195. However, since the outer peripheral side of the region where the droplet discharge heads 102 are aligned is surrounded by the outer peripheral portion 114 and the outer peripheral portion 124, the portion corresponding to the droplet discharge head 102 is wrinkled by the outer peripheral portion 114 and the outer peripheral portion 124. It is held in a fitted state. Accordingly, misalignment between portions corresponding to the droplet discharge heads 102 hardly occurs except in a direction that is exactly perpendicular to the surface of the mother head substrate 102A. Therefore, the mother head substrate 102A on which the modified band 44 is formed is handled. However, the possibility that the droplet discharge head 102 is easily separated is very small.

  The outer peripheral portion 114 and the outer peripheral portion 124 can be removed from the mother head substrate 102A in the same manner as the method for removing the outer peripheral portion 6 from the wafer 1A described in the first embodiment. The droplet discharge head 102 can be easily separated from the mother head substrate 102A from which the outer peripheral portion 114 and the outer peripheral portion 124 have been removed, only by applying a minute force.

Hereinafter, effects of the second embodiment will be described. According to the second embodiment, the following effects can be obtained.
(1) The outer peripheral side of the mother head substrate 102A in which the droplet discharge heads 102 are aligned is surrounded by the outer peripheral portion 114 and the outer peripheral portion 124 where the droplet discharge heads 102 are not formed. Corresponding portions are held by the outer peripheral portion 114 and the outer peripheral portion 124. Accordingly, since the positional displacement between the droplet discharge heads 102 hardly occurs except in the direction perpendicular to the surface of the mother head substrate 102A accurately, even if the mother head substrate 102A on which the modified band 44 is formed is handled, Since the possibility that the droplet discharge head 102 is easily separated is very small, it is possible to prevent the droplet discharge head 102 from being naturally separated before the dividing step.

  (2) By removing the outer peripheral portion 114 and the outer peripheral portion 124, the droplet discharge heads 102 are connected to each other only via the reforming zone 44 formed in the vicinity of the section screen 195. Since the droplet discharge head 102 can be easily divided on the section screen 195, it can be easily separated by suction with air tweezers or the like.

(Third embodiment)
Next, a third embodiment of a substrate dividing method, a droplet discharge head manufacturing method, a semiconductor device manufacturing method, a substrate manufacturing method, and an electro-optical device manufacturing method according to the present invention will be described. In this embodiment, as an example of a substrate dividing method, a substrate manufacturing method, and an electro-optical device manufacturing method, a mother panel in which a plurality of liquid crystal display panels constituting a liquid crystal display device which is an example of an electro-optical device is formed A dividing method used in the step of dividing the substrate into individual liquid crystal display panels will be described as an example. Note that the laser processing apparatus 10 of this embodiment is substantially the same as the laser processing apparatus 10 described in the first embodiment, and the dividing method is substantially the same as the dividing method described in the first embodiment. Are the same. The configuration of the liquid crystal display panel and the configuration of the mother panel substrate that are different from those of the first embodiment will be described.

<Configuration of LCD panel>
First, a liquid crystal display panel will be described. FIG. 11 is a schematic diagram showing the structure of a liquid crystal display panel. FIG. 11A is a plan view of the liquid crystal display panel as viewed from the counter substrate side together with each component, and FIG. 11B is a cross-sectional shape taken along the line AA in FIG. It is a schematic sectional drawing which shows. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member has a size that can be recognized on the drawing.

  As shown in FIGS. 11A and 11B, a liquid crystal display panel 200 is bonded to an element substrate 201 having a TFT (Thin Film Transistor) element 203, a counter substrate 202 having a counter electrode 206, and a sealing material 204. And a liquid crystal 205 filled in a gap between the element substrate 201 and the counter substrate 202. The element substrate 201 protrudes in a frame shape that is slightly larger than the counter substrate 202.

  The element substrate 201 uses a quartz glass substrate having a thickness of about 1.2 mm, a pixel electrode (not shown) constituting a pixel on the surface, and a TFT in which one of the three terminals is connected to the pixel electrode. An element 203 is formed. The remaining two terminals of the TFT element 203 are connected to a data line (not shown) and a scanning line (not shown) which are arranged in a grid pattern so as to surround the pixel electrode and are insulated from each other. The data line is drawn out in the Y-axis direction and connected to the data line driving circuit unit 209a at the terminal unit 216. The scanning lines are drawn out in the X-axis direction, and are individually connected to two scanning line driving circuit units 209b formed in the left and right frame regions. The input-side wirings of the data line driving circuit unit 209a and the scanning line driving circuit unit 209b are connected to mounting terminals 211 arranged along the terminal unit 216, respectively. In the frame region opposite to the terminal portion 216, a wiring 212 that connects the two scanning line driver circuit portions 209b to each other is provided.

  The counter substrate 202 is a transparent quartz glass substrate having a thickness of approximately 1.0 mm, and is provided with a counter electrode 206 as a common electrode. The counter electrode 206 is electrically connected to the wiring provided on the element substrate 201 side through the vertical conduction portions 214 provided at the four corners of the counter substrate 202, and the wiring is also connected to the mounting terminal 211 provided in the terminal portion 216. It is connected.

  An alignment film 207 and an alignment film 208 are formed on the surface of the element substrate 201 facing the liquid crystal 205 and the surface of the counter substrate 202, respectively.

  The liquid crystal display panel 200 is electrically connected to the external drive circuit by connecting a relay board electrically connected to the external drive circuit to the mounting terminal 211. An input signal from the external driving circuit is input to each data line driving circuit unit 209a and scanning line driving circuit unit 209b, whereby the TFT element 203 is switched for each pixel electrode, and the pixel electrode and the counter electrode 206 are During this period, a drive voltage is applied and display is performed.

  Although not shown in FIG. 11, polarizing plates are provided on the front and back surfaces of the liquid crystal display panel 200 to polarize incoming and outgoing light, respectively.

<Mother panel substrate>
FIG. 12 is a schematic view showing a mother panel substrate on which a liquid crystal display panel is formed. 12A is a schematic plan view of the mother panel substrate, and FIG. 12B is a schematic cross-sectional view showing a cross-sectional shape taken along the line BB in FIG. 12A. In addition, in FIG.12 (b), the sealing material 204 is abbreviate | omitting illustration. The thickness of the sealing material 204 relative to the thickness of the mother element substrate 201A and the like is shown thick in order to clearly show the liquid crystal 205 and the like in FIG.

  As shown in FIG. 12A, in the mother panel substrate 200A, a plurality of element substrates 201 corresponding to one liquid crystal display panel 200 are formed in a wafer-like mother element substrate 201A. In the mother element substrate 201A, the periphery of the element substrate region in which the element substrate 201 is partitioned is referred to as an outer peripheral portion 294. In FIG. 12A, the boundary line between the element substrates 201 formed by partitioning, which is indicated by a two-dot chain line, is referred to as a partition line 295, and the partition line 295 between the periphery of the element substrate region and the outer peripheral portion 294 is indicated. In particular, the boundary line 295a is indicated. Then, as shown in FIG. 12B, the counter substrate 202 is bonded onto the mother element substrate 201A. The counter substrate 202 on the mother element substrate 201A is bonded to each element substrate 201 that is partitioned. One liquid crystal display panel 200 is taken out from the mother panel substrate 200A by cutting the partition line 295. In this case, the mother element substrate 201A is a quartz glass substrate having a thickness of 1.2 mm and a diameter of 12 inches. On the mother panel substrate 200A, 200 liquid crystal display panels 200 are partitioned. The liquid crystal display panel 200 corresponds to a member, and the mother panel substrate 200A corresponds to a base material.

<Division of mother panel substrate>
The mother panel substrate 200 </ b> A is divided into individual liquid crystal display panels 200 by a laser scribing method using the laser processing apparatus 10. The process of dividing the mother panel substrate 200A into individual liquid crystal display panels 200 is the same as the process of dividing the wafer 1A described in the first embodiment into individual semiconductor chips 1. By forming the modified band 44 along the partition line 295 that is the boundary of the element substrate 201 formed on the mother element substrate 201A, and applying a weak bending force or tensile force in the vicinity of the modified band 44, the mother element The liquid crystal display panel 200 is separated by dividing the substrate 201A at the portion of the modified zone 44.

  When the modified band 44 is formed on all the partition lines 295 of the mother panel substrate 200A, the position of the partition line 295 shown in FIG. 12A, that is, the periphery of the portion corresponding to each liquid crystal display panel 200 In addition, the modified zone 44 is formed. A portion corresponding to each liquid crystal display panel 200 is formed with a modified band 44 at the position of the surrounding partition line 295, and if a relatively moving force is applied between the adjacent liquid crystal display panels 200, It can be easily separated at the portion of the modified zone 44 formed at the position of the line 295. However, since the outer peripheral side of the region where the liquid crystal display panel 200 is aligned is surrounded by the outer peripheral portion 294, the portion corresponding to the liquid crystal display panel 200 is held in a state where the heel is also wrinkled by the outer peripheral portion 294. Has been. Accordingly, misalignment between portions corresponding to the liquid crystal display panel 200 is unlikely to occur except in a direction that is exactly perpendicular to the surface of the mother panel substrate 200A. Therefore, the mother panel substrate 200A on which the modified band 44 is formed is handled. However, the possibility that the liquid crystal display panel 200 is easily separated is very small.

  The outer peripheral portion 294 can be removed from the mother panel substrate 200A in the same manner as the method for removing the outer peripheral portion 6 from the wafer 1A described in the first embodiment. The liquid crystal display panel 200 can be easily separated from the mother panel substrate 200A, from which the outer peripheral portion 294 has been removed, by simply applying a minute force.

<Division of counter substrate>
As described above, the counter substrate 202 is individually attached to each of the element substrates 201 partitioned and formed on the mother element substrate 201A. Similar to the element substrate 201, the counter substrate 202 is partitioned and formed on the mother counter substrate. By dividing the mother counter substrate by performing the same process as the process of separating the mother panel substrate 200A into the liquid crystal display panel 200 by dividing the mother element substrate 201A, the individual counter substrates 202 are formed. To do. The counter substrate 202 corresponds to a member and a sub substrate, and the mother counter substrate corresponds to a base material and a mother sub substrate.

Hereinafter, effects of the third embodiment will be described. According to the third embodiment, the following effects can be obtained.
(1) Since the outer peripheral side of the mother panel substrate 200A on which the liquid crystal display panel 200 is aligned is surrounded by the outer peripheral portion 294 where the liquid crystal display panel 200 is not formed, the portion corresponding to the liquid crystal display panel 200 is the outer peripheral portion 294. Is held by. Accordingly, since the positional deviation between the liquid crystal display panels 200 is difficult to occur except in a direction that is exactly perpendicular to the surface of the mother panel substrate 200A, even if the mother panel substrate 200A on which the modified band 44 is formed is handled, Since the possibility that the liquid crystal display panel 200 is easily separated is very small, it is possible to suppress the liquid crystal display panel 200 from being naturally separated before the dividing step.

  (2) By removing the outer peripheral portion 294, the liquid crystal display panel 200 is connected to each other only through the modified band 44 formed in the vicinity of the partition line 295, so that the liquid crystal display panel 200 is Since it can be easily divided at the lane markings 295, it can be easily separated by suction with air tweezers or the like.

  (3) The outer peripheral side of the mother counter substrate in which the counter substrate 202 is aligned is surrounded by the outer peripheral portion where the counter substrate 202 is not formed. Therefore, a portion corresponding to the counter substrate 202 is held by the outer peripheral portion. Accordingly, since the positional deviation between the counter substrates 202 is difficult to occur except in the direction perpendicular to the surface of the mother counter substrate, even if the mother counter substrate having the modified band 44 is handled, Since the possibility that the substrate 202 is separated is very small, it is possible to prevent the counter substrate 202 from being naturally separated before the dividing step.

  (4) By removing the outer peripheral portion, the counter substrate 202 can be easily connected to the demarcation line by being connected to each other only through the modified band 44 formed in the vicinity of the demarcation line. Therefore, it can be easily separated by suction with air tweezers or the like.

  As mentioned above, although preferred embodiment which concerns on this invention was described referring an accompanying drawing, embodiment of this invention is not restricted to the said embodiment. The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention, and can be implemented as follows.

  (Modification 1) In the second embodiment, the mother head substrate 102A is bonded to the substrate B on which the flow path forming substrate 110 is partitioned and the substrate C on which the sealing mounting substrate 125 is partitioned. The nozzle plate 120 and the elastic sheet 140 are separately bonded, but it is not essential to bond the divided nozzle plate 120 and the elastic sheet 140 together. The mother head substrate may be divided by bonding the substrate B, the substrate C, and / or the substrates A and D to divide the three or four substrates.

  In addition, it is not essential that the substrate B and the substrate C are bonded together in a state where the flow path forming substrate 110 or the sealing mounting substrate 125 is partitioned. Dividing the substrate B or the substrate C into the flow path forming substrate 110 or the sealing mounting substrate 125 in advance, and individually bonding the flow path forming substrate 110 or the sealing mounting substrate 125 to divide one substrate. Thus, the mother head substrate may be divided.

  (Modification 2) In the second embodiment, the modified region 40 is formed in the substrate B and the substrate C so that the substrate B and the substrate C can be easily divided. In order to be able to do so, it is not essential to form the modified region 40. When the semiconductor process for forming the flow path forming substrate 110 or the sealing mounting substrate 125 is performed on the substrate B or the substrate C, the boundary surface may be easily divided by half etching. . When the flow path forming substrate 110 or the sealing mounting substrate 125 is formed, the outer peripheral portion 114 or the outer peripheral portion 124 remains even if the flow path forming substrate 110 or the sealing mounting substrate 125 can be easily separated from each other. Therefore, the outer peripheral portion 114 or the outer peripheral portion 124 can be held so as not to be easily divided.

  (Modification 3) In the second embodiment, the modified region 40 is formed over the entire width in the cross-sectional direction of the substrate B and the substrate C so that the substrate B and the substrate C can be easily divided. However, it is not essential to form the modified region 40 over the entire width in the cross-sectional direction of the substrate. When the semiconductor process for forming the flow path forming substrate 110 or the sealing mounting substrate 125 is performed on the substrate B or the substrate C, the boundary surface is half-etched so that the width for forming the modified region 40 is increased. It may be reduced in advance.

  (Modification 4) In the first embodiment, the modified region 40 is formed in the wafer 1A so that the wafer 1A can be easily divided. It is not essential to form the modified region 40. When a semiconductor process for forming a semiconductor element or the like is performed on the wafer 1A, the boundary surface may be easily divided by half etching. Even when the chip portions 1a can be easily separated from each other when the semiconductor element or the like is formed, the outer peripheral portion 6 remains so that it is not easily divided by the outer peripheral portion 6. Can be held.

  (Modification 5) In the above embodiment, the modified region 40 is formed so that the wafer 1A, the mother head substrate 102A, or the mother panel substrate 200A can be easily divided. In order to achieve this, it is not essential to form the modified region 40. As described above, a groove or the like may be formed by etching, or a groove or a machine hole-like cut may be formed by using other methods such as dicing that forms a cut on a wafer using a grindstone or the like. Good. In any case, even when the liquid crystal display panel 200 or the like is in a state in which the liquid crystal display panel 200 can be easily divided from each other, the outer peripheral portion remains so that the liquid crystal display panel 200 can be held by the outer peripheral portion so as not to be easily divided. And can be easily divided by removing the outer periphery.

  (Modification 6) In the above-described embodiment, the stage 20 is moved in the direction perpendicular to the Z axis with respect to the condenser lens 23, so that the condenser lens 23, the wafer 1A, the mother head substrate 102A, and the mother panel substrate. Although 200A or the mother counter substrate is relatively moved, it is not essential to move the stage 20 side. By moving the condenser lens 23 side, relative movement between the condenser lens 23 and the wafer 1A, the mother head substrate 102A, the mother panel substrate 200A, or the mother counter substrate may be performed.

  (Modification 7) In the above embodiment, the Z-axis slide mechanism 24 adjusts the position of the condensing point with respect to the wafer 1A, the mother head substrate 102A, the mother panel substrate 200A, or the mother counter substrate. However, it is not essential to move the condenser lens 23. The position adjustment in the Z-axis direction of the condensing point with respect to the wafer 1A, the mother head substrate 102A, the mother panel substrate 200A, or the mother counter substrate may be adjusted by moving the stage 20 in the Z-axis direction. The laser light irradiation device including the laser light source 21 and the condensing lens 23 does not need to have an adjustment device, and the entire laser light irradiation device can be made lighter and smaller than when the laser light irradiation device has an adjustment device.

  (Modification 8) In the above embodiment, the modified layer is formed so that the modified regions are connected so as to be substantially connected to each other. However, it is not essential that the modified regions are connected substantially. As long as it can be divided by applying a small stress, the modified regions may be connected to each other at an interval. By separating the interval, the relative movement speed can be increased and the processing speed can be increased as compared with the configuration in which the modified regions are substantially connected.

  (Modification 9) In the above-described embodiment, the modified zone is formed by laminating the modified layers so as to be substantially connected to each other. However, it is not essential that the modified layers are substantially connected. As long as it can be divided by applying a small stress, the modified layers may be laminated at intervals. By separating the interval, the time required for forming the modified zone can be shortened as compared with the configuration in which the modified layers are substantially connected.

  (Modification 10) In the above-described embodiment, the scanning direction of each scan forming the modified region is the same direction, but it is not essential that the scanning direction of each scan is the same direction. The scanning direction may be changed for each modified layer to be stacked. By forming the modified region by scanning in both reciprocating directions, it is possible to reduce the time for forming the modified zone as compared to the case where the scanning direction of each scan is a single direction.

  (Modification 11) In the above-described embodiment, the substrate to be processed is a silicon substrate or a quartz glass substrate. However, the present invention is not limited to a quartz substrate made of quartz, Pyrex (registered trademark), or Neoserum (registered trademark). It can also be applied to a substrate made of OA-10.

  (Modification 12) In the above embodiment, the laser light source 21 is an Nd: YAG laser that uses a yttrium-aluminum-garnet-doped neodymium crystal as the laser medium. However, the laser light source uses another laser medium. It may be a laser light source. For example, another YAG laser, YLF laser, YVO4 laser, or the like may be used. In addition to the third harmonic, the Nd: YAG fundamental wave can also be used for the Nd: YAG laser. Note that it is preferable to select an appropriate laser medium or laser light to be oscillated according to the material to be processed.

  (Modification 13) In the above-described embodiment, laser processing by laser internal modification processing for forming a modified region by multiphoton absorption inside a substrate or the like has been described, but laser processing is not limited to laser internal modification processing. . Laser processing such as processing from the substrate surface toward the inside by laser light may be used.

  (Modification 14) Although the liquid crystal display panel of the liquid crystal display device as the electro-optical device has been described in the above embodiment, the electro-optical device may be, for example, an organic EL (electroluminescence) display device in addition to the liquid crystal display device. The present invention can also be applied to manufacturing.

  In the above-described embodiment, as an example of the processing object, a method for dividing a silicon substrate such as a silicon substrate or an integrated circuit constituting a head, or a method for dividing a mother panel substrate on which a liquid crystal display panel is formed has been described. The processing method according to the present invention can be used as a processing method for various objects to be processed. For example, a glass substrate dividing method used for cutting a glass substrate like a liquid crystal display panel, a crystal substrate dividing method used for cutting a crystal substrate such as a crystal oscillator, a piezoelectric element dividing method such as a piezoelectric element, a plastic plate dividing method, etc. As can be used.

The top view which shows the shape of the wafer in 1st embodiment. The schematic diagram which shows the structure of a laser processing apparatus. The flowchart which shows the process of dividing | segmenting a wafer into a semiconductor chip by dividing | segmenting by a laser scribing method. The schematic cross section of a wafer which shows the process of forming a modification zone in a wafer. The top view of a wafer which shows the position of the modification zone formed in the wafer. (A) The schematic diagram which shows the wafer mounted in the suction stage. (B) The top view of a chip | tip area | region. (C) The side view of the chip | tip area | region mounted in the suction stage. The schematic diagram which shows the method of removing an outer peripheral part. The exploded perspective view which shows typically the state which cut off some droplet discharge heads in 2nd embodiment. The schematic diagram which shows the aspect which laminates | stacks the board | substrate with which each element which comprises a part of droplet discharge head was formed. The schematic diagram which shows a mother head board | substrate. The schematic diagram which shows the structure of the liquid crystal display panel in 3rd embodiment. The schematic diagram which shows the mother panel board | substrate with which the liquid crystal display panel was dividedly formed.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 1A ... Wafer, 1a ... Chip part, 3 ... Partition line, 3a ... Boundary line, 6 ... Outer peripheral part, 7 ... Extension line, 10 ... Laser processing apparatus, 20 ... Stage, 21 ... Laser light source, 23 ... Condensing lens, 40 ... modified region, 42 ... modified layer, 44 ... modified zone, 52 ... chip cover, 53 ... air tweezers, 54 ... clamp terminal, 102 ... droplet ejection head, 102A ... mother head Substrate, 114, outer peripheral portion, 120, nozzle plate, 124, outer peripheral portion, 125, sealed mounting substrate, 195, section screen, 195a, boundary surface, 200, liquid crystal display panel, 200A, mother panel substrate, 201, element substrate 201A ... Mother element substrate, 202 ... Counter substrate, 294 ... Outer peripheral part, 295 ... Partition line, 295a ... Boundary line.

Claims (15)

A base material dividing method for forming the member by dividing the member region of the base material having a member region in which a plurality of members are partitioned and an outer peripheral portion surrounding the member region,
The strength of the planned splitting surface is smaller than the strength of the base material around the planned splitting surface with respect to the planned splitting surface that is a part to be separated when the base material is divided into the individual members. A pre-processing step for performing pre-division processing that is processing such as
An outer peripheral portion removing step of separating and removing the outer peripheral portion from the member region;
A dividing step of dividing the member region into the members.   The pre-division processing in the pre-processing step is laser processing in which a modified region is formed in the vicinity of the planned division surface by condensing laser light in the vicinity of the predetermined division surface. Item 2. A substrate dividing method according to Item 1.   In the pre-processing step, the pre-division processing focuses the laser light in the vicinity of the planned division surface inside the base material, so that the modification is performed in the vicinity of the planned division surface inside the base material. 3. The substrate dividing method according to claim 2, which is a laser internal reforming process for forming a region.   2. The base material dividing method according to claim 1, wherein the pre-division processing in the pre-processing step is dicing processing in which a cut along the planned division surface is formed on the base material. 3.   2. The base material dividing method according to claim 1, wherein the pre-division processing in the pre-processing step is etching processing for forming a groove along the planned division surface by etching.   The outer peripheral portion removing step applies a force having a force component in a direction perpendicular to the surface of the base material to the outer peripheral portion, so that bending stress is applied to the planned split surface between the outer peripheral portion and the member region. 6. The substrate dividing method according to claim 1, wherein the substrate is separated and removed from the member region by adding the step.   The outer peripheral portion removing step divides the outer peripheral portion by the force by applying a force having a force component in a direction parallel to the surface of the base material to the outer peripheral portion, and the outer peripheral portion and the member region. The step of separating and removing the outer peripheral portion from the member region by applying a force that separates the portions sandwiching the planned dividing surface from each other. The base material dividing method according to any one of claims 1 to 5.   The outer peripheral portion removing step applies a force having a force component in a direction perpendicular to the surface of the base material to the outer peripheral portion, so that a shear stress is applied to the planned split surface between the outer peripheral portion and the member region. 6. The substrate dividing method according to claim 1, wherein the substrate is separated and removed from the member region by adding the step.   The base material dividing method according to claim 1, further comprising a cover arranging step of arranging a member area cover that covers the member area.   The base material dividing method according to claim 1, further comprising a step of performing the pre-division processing on a part of the outer peripheral portion.   A method for manufacturing a substrate, comprising: dividing a mother substrate on which a substrate is partitioned by using the base material dividing method according to any one of claims 1 to 10.   Using the substrate dividing method according to any one of claims 1 to 10, a wafer in which an integrated circuit having a semiconductor element and a wiring constituting a semiconductor device is partitioned and formed corresponding to the individual semiconductor device. A method for manufacturing a semiconductor device, comprising: dividing the semiconductor device into semiconductor chips.   11. A droplet, wherein a mother head substrate on which a droplet discharge head is partitioned is divided into the droplet discharge heads using the substrate dividing method according to claim 1. Manufacturing method of the discharge head.   An electro-optical device, wherein a mother electro-optical substrate in which an electro-optical device is partitioned is divided into the electro-optical devices by using the base material dividing method according to any one of claims 1 to 10. Manufacturing method.   A mother sub-board in which a sub-board constituting an electro-optical device is partitioned is divided into the sub-board using the base material splitting method according to claim 1. A method of manufacturing an electro-optical device.

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