JP2008270516A - Substrate dividing method, method of manufacturing semiconductor device, and method of manufacturing electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of dividing a substrate which can apply a sufficient dividing stress onto a scheduled preprocessed division surface and can reduce the possibility of damaging the constituent structure on the substrate, a method of manufacturing semiconductor device, and a method of manufacturing an electro-optical device. <P>SOLUTION: The method of dividing a substrate having a plurality of members defined into the respective individual members includes steps of forming a continuous recess or a plurality of recesses spaced by an interval, in a scheduled division surface set on the substrate, filling a liquid into the recess or the plurality of recesses, and making the filled liquid swell. The substrate dividing method is used in the method of manufacturing a semiconductor device and also in the method of manufacturing an electro-optical device. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate dividing method for dividing a substrate in which a plurality of members are partitioned and formed into respective members, a semiconductor device manufacturing method using the substrate dividing method, and an electro-optical device manufacturing method.

  Conventionally, individual chips having a semiconductor integrated circuit and the like are formed by dividing a substrate such as a substrate or a wafer on which a plurality of semiconductor integrated circuits are partitioned and dividing the substrate at a boundary of the partitioned semiconductor integrated circuit and the like. There are known methods for manufacturing semiconductor devices and the like. As a dividing method in such a manufacturing method or the like, a dividing method is used in which pre-processing is performed such that a split is made along the planned split surface, and by applying force, the split is performed using the crack as a trigger. Yes.

  The force for dividing is, for example, by causing the substrate to be divided to warp with the surface on which the cracks and the like are formed facing outward, so that tensile stress is applied to the surface side on which the cracks and the like are formed, Add to the substrate. When a force is applied to a substrate or the like, there is a possibility that a semiconductor integrated circuit or the like formed in the portion is damaged by the force applied to the contact portion for applying a force to the substrate. Patent Document 1 discloses a semiconductor integrated circuit formed by using the upper surface of a planned division surface (division planned portion) of a substrate (plate-like body) on which division grooves are formed as a contact portion for applying a force. A method of dividing a substrate (plate-like body) by curving it into a curved surface without affecting the above is disclosed.

JP 2006-281324 A

  However, as the apparatus becomes smaller and lighter and the substrate to be divided becomes thinner, in order to generate the tensile stress necessary for the division, it is necessary to reduce the curvature radius that causes the substrate to be curved. I came. For this reason, in a substrate on which a large number of semiconductor integrated circuits and the like are formed, it is necessary to bend the both ends so that they become cylindrical, and it is very difficult to generate sufficient stress by warping. There was a problem of being. Further, since the portion other than the planned division plane including the portion where the semiconductor integrated circuit or the like is formed is also bent with a small radius of curvature, the portion or the semiconductor integrated circuit formed in the portion may be damaged. There were also challenges.

  SUMMARY OF THE INVENTION The present invention solves the above-described problems, and can apply sufficient stress for division to a pre-processed division surface and suppress the possibility of damaging the components on the substrate. It is an object to realize a substrate dividing method, a semiconductor device manufacturing method, and an electro-optical device manufacturing method.

  A substrate dividing method according to the present invention is a substrate dividing method in which a substrate on which a plurality of members are partitioned is divided into respective members, and a continuous concave portion or interval is separated from a predetermined division surface set on the substrate. Forming a plurality of recesses connected in series, a recess forming step, filling the recess or the plurality of recesses with a liquid material, and a liquid material filling step, and an expansion step for expanding the filled liquid material. And

  According to the substrate dividing method of the present invention, the liquid filled in the continuous recesses or the plurality of recesses is expanded in the expansion step, thereby pressing the walls of the recesses to expand the recesses. A force acting on the substrate is applied to the substrate. Thereby, since a groove | channel or a some recessed part is expanded, a board | substrate can be divided | segmented from the said recessed part. The force acts only on the wall of the recess. As a result, almost no force is applied to the portion other than the concave portion of the substrate, so that there is a possibility that the portion other than the concave portion or, for example, a semiconductor integrated circuit formed in the portion is damaged by being deformed by receiving the force. It can be made extremely small.

  In the present invention, the substrate dividing method is preferably expanded by heating the liquid material to increase the temperature of the liquid material in the expansion step.

  According to this substrate dividing method, in order to expand the liquid material so as to exert a force, it is only necessary to transfer heat to the liquid material. In order to transfer heat to the liquid material, it is not always necessary to bring the heat source into contact with the liquid material, so that the liquid material in the narrow recess can be easily expanded.

  In the present invention, the substrate dividing method preferably expands the liquid material by heating the liquid material to vaporize the liquid material in the expansion step.

  According to this substrate dividing method, when the liquid material is vaporized, the volume rapidly increases and a large force can be applied to the wall surface of the recess.

  In the present invention, the substrate dividing method preferably expands the liquid material by irradiating the liquid material with laser light in the expansion step to raise or vaporize the temperature of the liquid material.

  According to this substrate dividing method, it is possible to accurately irradiate a narrow area with laser light. Therefore, when the liquid material is heated, the portion other than the concave portion where the liquid material is disposed is affected. Can be suppressed.

  In the present invention, the substrate dividing method is preferably such that, in the expansion step, the liquid material is expanded or vaporized by bringing the heating element into contact with or close to the opening of the recess or the plurality of recesses.

  According to this substrate dividing method, the heating element is brought into contact with or close to the opening of the recess in order to heat the liquid material. Since the heating element does not approach the concave portion where the liquid material is disposed and the portion near the concave portion, when the liquid material is heated, the influence on the portion other than the concave portion where the liquid material is disposed is suppressed. Can do.

  In the present invention, in the substrate dividing method, it is preferable that the liquid material is a liquid material having cooling expansibility, and the liquid material is expanded by cooling the liquid material in the expansion step.

  According to this substrate dividing method, in order to expand the liquid material so that a force is applied, it is only necessary to cool the liquid material. In order to remove heat from the liquid material for cooling, it is not always necessary to bring the cooling device into contact with the liquid material, so that the liquid material in the narrow recess can be easily expanded.

  In the present invention, the substrate dividing method is a liquid material having a characteristic that the liquid material expands when solidified, and in the expansion step, the liquid material is expanded by cooling and solidifying. preferable.

  According to this substrate dividing method, the liquid material solidifies, so that the volume increases rapidly and a large force can be applied to the wall surface of the recess. In addition, since the fluidity becomes poor due to solidification of the liquid material, the possibility of outflow from the recessed portion is reduced, so that the expanded fluid exits from the recessed portion, so that the force does not act on the wall of the recessed portion and is wasted. It is possible to effectively act on the force.

  In the present invention, in the substrate dividing method, it is preferable that the recess forming step is a step of forming a groove along the planned dividing surface using a cutter.

  According to this substrate dividing method, the groove is formed using the cutter, so that the concave portion in which the liquid material is disposed can be formed, and at the same time, the substrate can be easily divided on the planned dividing surface.

  In the present invention, the method for dividing the substrate is a method in which the recess forming step condenses the laser light on the region including the portion of the substrate to be divided inside the substrate, thereby including the portion of the substrate to be divided inside the substrate. Preferably, this is a step of forming a modified region.

  According to this substrate dividing method, in order to form the concave portion in which the liquid material is disposed, the modified region is formed in the portion by condensing the laser light on the region including the portion of the surface to be divided. The method of forming the modified region along the planned dividing surface and cutting the object to be processed with the modified region as a starting point generates almost no cutting waste, and provides a cross section that is accurate and has less unevenness. Therefore, by forming the modified region by condensing the laser beam to form the recess, it is possible to form a cross section that is accurate and has less unevenness.

  In the present invention, the method for dividing the substrate is to supply the liquid material to the recess or the plurality of recesses by using a droplet discharge device capable of discharging the liquid material as droplets at any position in the liquid material filling step. It is preferable.

  According to this substrate dividing method, the droplet can be landed on the position of the concave portion almost accurately using the droplet discharge device. The landed droplet spreads wet at the landed position, but the range is limited to a range determined by the volume of the droplet and the like, and can be appropriately sized by appropriately controlling the volume of the droplet. By adjusting the size of the droplet and the number of droplets to be landed, the amount of the liquid material to be disposed can be adjusted. Therefore, it is possible to arrange an amount necessary for filling the recess with the liquid material, and to suppress disposing the liquid material in an unnecessary portion.

  In the present invention, the substrate dividing method preferably supplies the liquid material to the recess or the plurality of recesses using a dispenser device capable of supplying the liquid material to an arbitrary position in the liquid material filling step.

  According to this substrate dividing method, the liquid material can be accurately arranged at substantially the position of the recess using the dispenser device. The arranged liquid material spreads wet at the arranged position, but the range is limited to a range determined by the volume of the arranged liquid material, etc., and is appropriately controlled by appropriately controlling the volume of the arranged liquid material. Can be sized. Therefore, it is possible to arrange an amount necessary for filling the recess with the liquid material, and to suppress disposing the liquid material in an unnecessary portion.

  A method of manufacturing a semiconductor device according to the present invention is characterized in that a wafer on which a semiconductor device is partitioned is divided into respective semiconductor devices by using the substrate dividing method described above.

  According to the method for manufacturing a semiconductor device of the present invention, almost no force is applied to a portion other than the concave portion formed on the planned division surface of the substrate. Therefore, for example, a semiconductor integrated circuit formed in the portion other than the concave portion or the portion. A substrate dividing method is used that can minimize the possibility that a circuit or the like will be damaged by being deformed by force. As a result, when the wafer is divided into individual semiconductor devices, it is possible to extremely reduce the possibility of damaging a portion other than the planned division surface of the wafer, and thus the semiconductor device may be damaged due to the division work. Can be made extremely small.

  The method for manufacturing an electro-optical device according to the present invention is characterized in that the electro-optical device substrate on which the electro-optical device is partitioned is divided into the respective electro-optical devices by using the substrate dividing method described above.

  According to the method for manufacturing an electro-optical device according to the present invention, when the electro-optical device substrate is divided into the respective electro-optical devices, almost no force is applied to portions other than the concave portions formed on the planned division surface of the substrate. Therefore, a method of dividing the substrate is used that can extremely reduce the possibility that a portion other than the recess and, for example, a semiconductor integrated circuit formed in the portion will be damaged by receiving a force. As a result, when the electro-optical device substrate is divided into the respective electro-optical devices, the possibility of damaging the portions other than the planned division surfaces of the electro-optical device substrate can be extremely reduced. The possibility that the electro-optical device is damaged can be extremely reduced.

  The method of manufacturing an electro-optical device according to the present invention includes dividing the mother electro-optical substrate, in which the electro-optical substrate constituting the electro-optical device is partitioned, into the respective electro-optical substrates using the above-described substrate dividing method. Features.

  According to the method for manufacturing an electro-optical device according to the present invention, when the mother electro-optical substrate is divided into the respective electro-optical substrates, almost no force is applied to the portions other than the concave portions formed on the planned division surfaces of the substrate. Therefore, a method of dividing the substrate is used that can extremely reduce the possibility that a portion other than the recess and, for example, a semiconductor integrated circuit formed in the portion will be damaged by receiving a force. As a result, when dividing the mother electro-optic substrate into the respective electro-optic substrates, it is possible to extremely reduce the possibility of damaging portions other than the planned division surface of the mother electro-optic substrate. The possibility that the electro-optic substrate is damaged can be extremely reduced.

  An embodiment of a substrate dividing method, a semiconductor device manufacturing method, and an electro-optical device manufacturing method according to the present invention will be described below with reference to the drawings. In the drawings used for the following description, the scale of each member and each layer is appropriately changed so that each member and each layer can be recognized.

(First embodiment)
In this embodiment, as an example of a substrate dividing method and a semiconductor device manufacturing method, an integrated circuit having semiconductor elements and wirings constituting a semiconductor device is partitioned in a process of manufacturing a semiconductor chip constituting the semiconductor device. A dividing method used in the step of dividing the wafer into individual semiconductor chips will be described as an example.

<Wafer configuration>
First, the configuration of the wafer 1A in which integrated circuits are partitioned will be described. An integrated circuit is formed on a silicon wafer using a semiconductor process. FIG. 1 is a plan view showing the shape of a wafer. As shown in FIG. 1, an integrated circuit having semiconductor elements and wirings constituting a semiconductor device is partitioned on the wafer 1A, and is surrounded by a virtual partition line 3 indicated by a two-dot chain line in FIG. An integrated circuit corresponding to one semiconductor device is formed in each chip portion 1a (the portion indicated by a halftone dot in the drawing). On the wafer 1A, 37 chip portions 1a corresponding to one semiconductor chip 1 are formed. The 37 chip portions 1 a are collectively referred to as a chip region 4, and a portion on the outer peripheral side of the chip region 4 is referred to as an outer peripheral portion 6. A virtual line obtained by extending the partition line 3 to the outer peripheral portion 6 is referred to as a boundary line 3a. The semiconductor chip 1 can be separated from the wafer 1A by dividing the chip region 4 in the cross section including the partition line 3. However, since the chip region 4 has been wrinkled by the outer peripheral portion 6, The separation of the chip 1 is not easy. The semiconductor chip 1 can be easily separated from the wafer 1A by dividing the outer peripheral portion 6 in the cross section including the boundary line 3a together with the division of the chip region 4 in the cross section including the partition line 3. The wafer 1A corresponds to a substrate or a wafer. A cross section of the wafer 1 </ b> A having the partition line 3 or the boundary line 3 a as one end corresponds to the planned division surface.

<Scribe groove forming device>
Next, a scribe groove forming apparatus used for forming a scribe groove in a split object such as the wafer 1A will be described with reference to FIG. FIG. 2 is an explanatory diagram showing a schematic configuration of the scribe groove forming apparatus. FIG. 2A is an explanatory diagram showing the overall configuration of the scribe groove forming apparatus, and FIG. 2B is an explanatory diagram showing the configuration around the head that supports the cutter.

  As shown in FIG. 2 (a), the scribe groove forming device 5 is a stage that holds the divided object W on the XY plane when the directions orthogonal to each other are the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively. 10, a cutter 12 for forming a scribe groove in the split object W, and a head 11 that supports the cutter 12 so as to be movable in the Z-axis direction. The scribe groove forming apparatus 5 includes an X-axis direction drive mechanism 14 that moves the head 11 in the X-axis direction, a Y-axis direction drive mechanism 15 that moves the head 11 in the Y-axis direction, and a stage 10 in the XY plane. And a rotation drive device (not shown) for rotating the.

  As the X-axis direction drive mechanism 14, a ball screw 16 extending in the X-axis direction and a motor (not shown) that rotationally drives the ball screw 16 are disposed, while a base 18 on which the head 11 is mounted is disposed on the base 18. A screw 18a (see FIG. 2B) that is screwed into the ball screw 16 is formed. With this configuration, when the ball screw 14 is rotated, the cutter 12 moves in the X-axis direction together with the head 11 mounted on the base 18. Further, as the Y-axis direction drive mechanism 15, a ball screw 21 extending in the Y-axis direction and a motor (not shown) that rotationally drives the ball screw 21 are disposed, while a screw that is screwed into the ball screw 21 ( A slider 22 having a not-shown shape is supported by the ball screw 21 by screwing the screw into the ball screw 21. With this configuration, when the ball screw 21 is rotated, the slider 22 moves in the Y-axis direction, so that the cutter 12 moves in the Y-axis direction together with the head 11 mounted on the base 18.

  Further, as shown in FIG. 2B, the scribe groove forming apparatus 5 includes a Z-axis direction drive mechanism 23 that adjusts the relative position of the head 11 in the Z-axis direction with respect to the divided object W placed on the stage 10. Is configured. As the Z-axis direction drive mechanism 23, a pulse motor 24 fixed to the base 18 and a ball screw fixed to the drive shaft of the pulse motor 24 and rotatable by the pulse motor 24 and extending in the Z-axis direction 25 is arranged. On the other hand, the head 11 is formed with a screw 11 a that is screwed into the ball screw 25. With this configuration, the cutter 12 is moved together with the head 11 in the Z-axis direction by rotating the ball screw 25 by the pulse motor 24.

  The cutter 12 is a known cutter for forming a scribe groove, has a shape like an abacus ball, and is rotatably supported by an axis fixed in parallel to the X and Y planes at the tip of the plunger 12A. ing. The plunger 12A is fitted to the cylinder portion 11b of the head 11 so as to be rotatable around the Z axis. With this configuration, the direction of the cutter 12 can be matched with the relative movement direction of the cutter 12 and the split object W. When the direction of the cutter 12 matches the relative movement direction, the cutter 12 rotates around the axis following the relative movement between the cutter 12 and the object to be divided W that are in contact with each other.

  Using the scribing groove forming apparatus 5 configured as described above, a scribing groove is formed in the split object W according to the following procedure. First, the division target W is placed on the stage 10. Next, the cutter 12 is moved to a position facing the planned division surface of the object W by the X-axis direction drive mechanism 14 and the Y-axis direction drive mechanism 15. Next, the head 11 that supports the cutter 12 is lowered using the Z-axis direction drive mechanism 23 to bring the cutter 12 into contact with the position of the division target surface of the division target W. At this time, it is lowered to such a height that an appropriate pressing force can be obtained, depending on the material of the divided object W or the like. While the cutter 12 is kept in contact with the object to be divided W, the X-axis direction drive mechanism 14 or the Y-axis direction drive mechanism 15 causes the cutter 12 and the object to be divided W to be relative to each other in the extending direction of the planned division surface. By moving it, a scribe groove is formed along the planned dividing surface.

<Dispenser device>
Next, the dispenser device 30 used for disposing the liquid material in the scribe groove will be described with reference to FIG. FIG. 3 is an external perspective view showing a schematic configuration of the dispenser device.

  As shown in FIG. 3, the dispenser device 30 includes a dispenser mechanism 32 having a dispenser 31 that discharges a liquid material, and a workpiece mounting on which a divided object W that is a discharge target of the liquid material discharged from the dispenser 31 is placed. A work mechanism unit 33 having a mounting base 33 </ b> A, a liquid material supply unit 34 for supplying the liquid material to the dispenser 31, and a maintenance device unit 35 for maintaining the dispenser 31 are provided. In addition, a dispenser device control unit 36 that controls these mechanisms and the like is provided.

  Further, the dispenser device 30 includes a plurality of support legs 38a installed on the floor and a surface plate 38 installed on the upper side of the support legs 38a. On the upper side of the surface plate 38, the work mechanism portion 33 is disposed so as to extend in the longitudinal direction (X-axis direction) of the surface plate 38. Above the work mechanism 33, the dispenser mechanism 32 supported by two support columns fixed to the surface plate 38 extends in a direction (Y-axis direction) orthogonal to the work mechanism 33. It is arranged. Further, a liquid tank of the liquid supply unit 34 having a supply pipe communicating with the dispenser 31 of the dispenser mechanism unit 32 is disposed beside the surface plate 38. In the vicinity of one support column of the dispenser mechanism part 32, a maintenance device part 35 is arranged in the X-axis direction along with the work mechanism part 33. Further, a dispenser device controller 36 is accommodated below the surface plate 38.

  The dispenser mechanism 32 includes a dispenser unit 31A having a dispenser 31 and a dispenser carriage 37 that supports the dispenser unit 31A so as to be movable in the Z-axis direction via a Z-axis moving mechanism (not shown). The dispenser mechanism 32 moves the dispenser 31 freely in the Y-axis direction by moving the dispenser carriage 37 in the Y-axis direction. Moreover, it holds at the moved position. The workpiece mechanism unit 33 moves the workpiece mounting table 33A in the X-axis direction, thereby freely moving the divided object W placed on the workpiece mounting table 33A in the X-axis direction. Moreover, it holds at the moved position.

  Thus, the dispenser 31 moves to the discharge position in the Y-axis direction and stops, and discharges the liquid material in synchronization with the movement of the division target W located below in the X-axis direction. The dispenser device 30 supplies the liquid material to an arbitrary position on the split object W by relatively controlling the split object W that moves in the X-axis direction and the dispenser 31 that moves in the Y-axis direction. Is possible.

<Division of wafer>
Next, the process of dividing the wafer 1A described with reference to FIG. 1 into the semiconductor chips 1 will be described with reference to FIGS. FIG. 4 is a flowchart showing a process of dividing the wafer into semiconductor chips, and FIG. 5 is a schematic cross-sectional view showing a process of dividing the wafer into semiconductor chips. 5 (a), (c) and (e) are cross-sectional views of the cross-section along the plane to be divided, and FIGS. 5 (b), (d) and (f) to (h) are planes to be divided. It is sectional drawing of the cross section orthogonal to.

  First, in step S1 of FIG. 4, scribe grooves are formed at the positions of the partition line 3 and the boundary line 3a of the wafer 1A. As described above, the position of the division line 3 or the boundary line 3a is the position of the planned division plane 30a (see FIG. 5B). The scribe groove is formed by using the scribe groove forming apparatus 5 described above. As described with reference to FIG. 2, first, the wafer 1A is placed on the stage 10 so that the direction of the partition line 3 and the boundary line 3a coincides with the X-axis direction or the Y-axis direction of the scribe groove forming apparatus 5. Is placed. Next, the cutter 12 is moved by the X-axis direction drive mechanism 14 and the Y-axis direction drive mechanism 15 to a position facing the partition line 3 or the boundary line 3a corresponding to one end of the planned division surface of the wafer 1A. Next, by lowering the head 11 that supports the cutter 12 using the Z-axis direction drive mechanism 23, the cutter 12 is brought into contact with the position of the partition line 3 or the boundary line 3a.

  By appropriately setting the pressing force of the cutter 12 to the wafer 1A according to the material of the wafer 1A, the cutter 12 is pushed into the wafer 1A at a depth indicated by h in FIGS. 5 (a) and 5 (b). It is. Further, a crack 40 is formed from the front end of the cut into which the cutter 12 is pushed in along the planned split surface 30a with a length indicated by v in FIGS. 5 (a) and 5 (b). While maintaining the state where the cutter 12 is pushed into the wafer 1A by the depth h, the cutter 12 is moved relative to the direction of arrow a shown in FIG. A groove 41 and a crack 40 are formed. The direction of the arrow a is the extending direction of the planned dividing surface 30a, the extending direction of the partition line 3 or the boundary line 3a, and the wafer 1A has a scribe groove in which the extending direction of the partition line 3 or the boundary line 3a is It is set so as to coincide with the X-axis direction or the Y-axis direction of the forming apparatus 5. The relative movement in the direction of the arrow a is executed using the X-axis direction drive mechanism 14 or the Y-axis direction drive mechanism 15.

  Next, in step S <b> 2 of FIG. 4, water 44 is disposed in the scribe groove 41. By arranging the water 44 in the scribe groove 41, the water 44 is also arranged in the crack 40 continuing to the scribe groove 41. The scribe groove 41 corresponds to a continuous concave portion, the crack 40 corresponds to a continuous concave portion or a plurality of concave portions connected at intervals, and water 44 corresponds to a liquid material.

  The arrangement of the water 44 is performed using the dispenser device 30 described above. As described with reference to FIG. 3, first, the wafer 1 </ b> A is mounted on the workpiece mounting table 33 </ b> A so that the direction of the scribe groove 41 coincides with the X-axis direction or the Y-axis direction of the dispenser device 30. . Next, the dispenser 31 is moved to a position facing the scribe groove 41 formed on the wafer 1 </ b> A by the dispenser mechanism 32 and the work mechanism 33.

  Next, as shown in FIGS. 5C and 5D, while discharging water 44 from the dispenser 31 facing the scribe groove 41, the dispenser 31 is moved in the direction of the arrow a shown in FIG. Move relative. Thereby, as shown in FIGS. 5E and 5F, the water 44 is disposed so as to fill the scribe groove 41. The water 44 that has been disposed and entered the scribe groove 41 communicates with the bottom of the scribe groove 41 and also penetrates into the crack 40 formed along the planned split surface 30 a from the bottom of the scribe groove 41.

  The direction of the arrow a shown in FIG. 5A or 5C is the extending direction of the scribe groove 41. In the wafer 1A, the extending direction of the scribe groove 41 is the X axis direction or the Y axis of the dispenser device 30. The relative movement in the direction of arrow a is performed using the dispenser mechanism 32 or the work mechanism 33.

  Next, in step S <b> 3 of FIG. 4, the wafer 1 </ b> A is divided into individual semiconductor chips 1 by heating the water 44 disposed in the scribe grooves 41 and the cracks 40. The water 44 is heated by bringing a high-temperature heating terminal 46 into contact with the opening of the scribe groove 41 as shown in FIG. The heated water 44 rises in temperature and expands or vaporizes. When the water 44 is volume-expanded or vaporized, as shown by an arrow F in FIG. 5G, a force in a direction of expanding the scribe groove 41 and the crack 40 is applied to the wall surface of the scribe groove 41 and the crack 40. . As shown in FIG. 5H, the applied force causes the wafer 1A to be divided at the portion to be divided 30a. The length of the heating terminal 46 in the extending direction of the scribe groove 41 may be a length corresponding to a part of the extending direction of the scribe groove 41, but in the single scribe groove 41 and the scribe groove 41. Since the applied force can be efficiently applied to the continuous cracks 40, it is preferable that the continuous cracks 40 have a length that allows simultaneous contact over the entire length of the scribe groove 41.

  The wafer 1 </ b> A is divided into individual semiconductor chips 1 by dividing at the portion of the planned dividing surface 30 a at the positions of all the partition lines 3 and the boundary lines 3 a. Step S3 is executed, and the process of dividing the wafer 1A into the semiconductor chips 1 is completed.

The effects of the first embodiment will be described below. According to the first embodiment, the following effects can be obtained.
(1) The water 44 arranged in the scribe grooves 41 and the cracks 40 is heated or expanded or vaporized to expand the volume thereof, thereby pressing the walls of the scribe grooves 41 and the cracks 40, A force acting to expand the scribe groove 41 and the crack 40 is applied to the wafer 1A. Thereby, since the scribe groove 41 and the crack 40 are expanded, the wafer 1A can be divided starting from the scribe groove 41 and the crack 40.

  (2) Since the force caused by the expansion of the water 44 disposed in the scribe groove 41 and the crack 40 acts only on the wall of the scribe groove 41 and the crack 40, the force is applied to a portion other than the scribe groove 41 and the crack 40 of the wafer 1A. There is little force applied. As a result, the possibility that the portion of the planned dividing surface where the scribe groove 41 is formed and the semiconductor integrated circuit formed in the portion will be damaged by being deformed by receiving a force can be extremely reduced.

  (3) In order to arrange the water 44 in the scribe groove 41 and the crack 40, the dispenser device 30 is used. The dispenser device 30 can supply an arbitrary amount of liquid material to an arbitrary position on the division target W. Accordingly, it is possible to arrange an amount necessary for filling the scribe grooves 41 and the cracks 40 with the water 44, and to prevent unnecessary water 44 from being disposed in portions other than the scribe grooves 41 and the cracks 40. can do.

  (4) A heating terminal 46 is used to heat the water 44 disposed in the scribe groove 41 and the crack 40. Since only the vicinity of the heating terminal 46 can be heated by using the heating terminal 46, there is a possibility that the portion of the wafer 1A other than the vicinity of the scribe groove 41 and the crack 40 is heated and damaged. Can be small.

(Second embodiment)
Next, a second embodiment of the substrate dividing method, the semiconductor device manufacturing method, and the electro-optical device manufacturing method according to the present invention will be described. In this embodiment, in a process of manufacturing a liquid crystal display panel constituting a liquid crystal display device that is an example of an electro-optical device, a mother substrate on which the liquid crystal display panel is partitioned is cut and divided into individual liquid crystal display panels. The division method used in the process will be described as an example.

<Laser processing equipment>
First, when the mother substrate (see FIG. 10) is divided into the liquid crystal display panel (see FIG. 9) in this embodiment, the modified regions corresponding to the continuous recesses or a plurality of recesses connected at intervals are formed. The laser processing apparatus 45 used for this purpose will be described with reference to FIG. FIG. 6 is a schematic diagram showing the configuration of the laser processing apparatus.

  As shown in FIG. 6, the laser processing device 45 includes a laser light source 51, a dichroic mirror 52, a condenser lens 53, a Z-axis slide mechanism 54, an imaging device 59, a stage 50, and a rotation mechanism 55. , An X-axis slide mechanism 57, a Y-axis slide mechanism 56, and a machine base 58.

  The laser light source 51 is an Nd: YAG laser that uses, for example, a crystal obtained by doping yttrium-aluminum-garnet with neodymium as a laser medium, and the excitation method of the laser light source 51 is LD excitation. As will be described later, the mother element substrate 181 (see FIG. 10 or FIG. 13), which is an object to be divided in the present embodiment, is formed of quartz glass. In order to form the modified layer on the mother element substrate 181 made of quartz glass or the like, the laser light is used by oscillating Nd: YAG-THG (third harmonic). The laser light emitted from the laser light source 51 is reflected by the dichroic mirror 52 and is condensed inside the division target W by the condenser lens 53. The condenser lens 53 is supported by a slide arm 54 a extending from the Z-axis slide mechanism 54, and the Z-axis slide mechanism 54 moves the condenser lens 53 relative to the divided object W placed on the stage 50. To move the condensing position of the laser light in the thickness direction of the split object W (Z-axis direction in FIG. 6). The imaging device 59 is located on the opposite side of the condenser lens 53 with the dichroic mirror 52 interposed therebetween, and takes an image of the division target W or the like.

  The machine base 58 is a frame that supports each mechanism constituting the laser processing apparatus 45. The X-axis slide base 57b constituting the X-axis slide mechanism 57 is fixed to the machine base 58, and the X-axis slider 57a constituting the X-axis slide mechanism 57 is slidable and fixable in the X-axis direction. The slide base 57b is engaged. The Y-axis slide base 56b constituting the Y-axis slide mechanism 56 is fixed to the X-axis slider 57a. The Y-axis slider 56a constituting the Y-axis slide mechanism 56 is slidable and fixable in the Y-axis direction. The shaft slide base 56b is engaged. A rotation mechanism base 55b constituting the rotation mechanism 55 is fixed to the Y-axis slider 56a, and the rotation table 55a constituting the rotation mechanism 55 is rotatable about the Z axis and can be fixed. The base 55b is engaged. The X-axis slider 57a, the Y-axis slider 56a, and the rotation table 55a are driven by a servo motor (not shown) configured between the X-axis slide base 57b, the Y-axis slide base 56b, and the rotation mechanism base 55b, respectively. The

  The stage 50 is fixed to the rotation table 55a, and is used to place the division object W thereon. The division target W placed on the stage 50 is sucked by, for example, a suction device configured on the stage 50 and fixed to the stage 50. The division target W fixed to the stage 50 can be rotated around the Z axis by the rotation mechanism 55 and is parallel to the X axis and the Y axis with respect to the condenser lens 53 (hereinafter referred to as “plane direction”). The posture is also adjusted. Further, the division object W fixed to the stage 50 is moved in a plane direction parallel to the X axis and the Y axis by the X axis slide mechanism 57 and the Y axis slide mechanism 56, and the division object W is arbitrarily selected. Is moved to a position facing the condenser lens 53. The thickness direction of the divided object W placed and fixed on the stage 50 is the Z-axis direction.

  The laser processing apparatus 45 includes a main computer 60 as a control unit that controls each of the above components. The main computer 60 includes an image processing unit 64 that processes image information captured by the imaging device 59 in addition to the CPU and various memories. The imaging device 59 incorporates a coaxial incident light source and a CCD (solid-state imaging device). Visible light emitted from the coaxial incident light source passes through the condenser lens 53 and is focused.

  The main computer 60 is connected to an input unit 65 for inputting data on various processing conditions used in laser processing and a display unit 66 for displaying various information at the time of laser processing. A laser control unit 61 that controls the output, pulse width, and pulse period of the laser light source 51 and a lens control unit 62 that drives the Z-axis slide mechanism 54 to control the position of the condenser lens 53 in the Z-axis direction. It is connected. Further, a stage control unit 63 for controlling a servo motor (not shown) that drives the rotation mechanism 55, the X-axis slide mechanism 57, and the Y-axis slide mechanism 56 is connected.

  The Z-axis slide mechanism 54 that moves the condenser lens 53 in the Z-axis direction has a built-in position sensor that can detect the movement distance, and the lens control unit 62 detects the output of the position sensor and collects the light. The position of the lens 53 in the Z-axis direction can be controlled. Therefore, if the condensing lens 53 is moved in the Z-axis direction so that the focus of the visible light emitted from the coaxial incident light source of the image pickup device 59 is aligned with the surface of the division target W, the thickness of the division target W is measured. Is possible. It is also possible to match the condensing position of the condensing lens 53 to an arbitrary position from the surface of the divided object W.

<Formation of modified region>
Here, the formation of the modified region 140 (see FIG. 7) by multiphoton absorption, which is an example of laser processing, will be described. Even if the split object W is made of a material that is transparent to the light applied thereto, absorption occurs when the photon energy hν is much larger than the absorption band gap Eg of the material. This absorption is called multiphoton absorption. When multiphoton absorption is caused to occur inside the split object W, microcracks are formed inside the split object W by converting the energy of multiphoton absorption into thermal energy. Alternatively, when the pulse width of the laser beam is made extremely short and multiphoton absorption is caused to occur inside the split object W, the energy of the multiphoton absorption is not converted into thermal energy, but the ion valence change, crystallization or A permanent structural change such as polarization orientation is induced to form a refractive index change region. In the present embodiment, these micro crack formation region and refractive index change region are referred to as a modified region 140.

  In the case where the modified region 140 is formed using pulsed laser light, one modified region 140 is formed using one pulse of laser light. A modified region that is arranged continuously in the plane direction of the divided object W or at a slight interval by forming the modified region 140 while moving the condensing position in the plane direction of the divided object W. 140 rows are formed. Hereinafter, the row of the modified region 140 is referred to as a modified layer 142 (see FIG. 7). The condensing position is moved in the thickness direction of the object to be divided W, and the reforming layer 142 is further formed in a position overlapping with the formed reforming layer 142 in the plane direction of the object to be divided, thereby improving the property. The layer 142 is stacked to form a region where the modified regions 140 are arranged in a plane. Hereinafter, the region in which the modified regions 140 are arranged in a plane is referred to as a modified zone 144 (see FIG. 7). Even if the applied force W is a minute force, the split object W in which the reforming zone 144 is formed cracks as a result of the reforming zone 144 and is easily split at the portion of the reforming zone 144. Is done.

<Formation of reforming zone>
Next, the process of forming the modified zone 144 on the division target W using the laser processing apparatus 45 will be described with reference to FIG. FIG. 7 is a schematic cross-sectional view of a split object showing a process of forming a modified zone on the split object.

  First, as shown in FIG. 7A, the modified region 140 is formed by condensing the laser light in the vicinity of the surface of the split object W opposite to the laser light incident surface. A lens 53 a illustrated in FIG. 7 is an objective lens that constitutes the condenser lens 53. In parallel with the formation of the modified region 140, the divided object W is moved in the direction of the arrow a by the Y-axis slide mechanism 56, thereby forming the modified layer 142 in which the modified regions 140 are continuous or continuous. .

  As described above, the laser light source 51, which is a laser light source, is an LD-pumped Nd: YAG laser. In the present embodiment, a third harmonic having a wavelength of 355 nm is used. As will be described later, a quartz glass substrate is used as the substrate constituting the liquid crystal display panel 80 (see FIG. 9) of the present embodiment. The modified region formed using a laser beam having a wavelength of 355 nm with respect to the quartz glass substrate is a micro crack formation region in which micro cracks are formed.

  When the formation of one layer of the modified layer 142 is completed, the condensing position is moved in the thickness direction of the object to be divided W, and the modified layer 142 is similarly formed at that position. The modified layer 142 is laminated in the thickness direction. Finally, as shown in FIG. 7B, the laser light is condensed near the laser light incident surface of the division target W to form the modified region 140, and the division target W is moved to the arrow. By moving in the direction a, a reforming layer 142 is formed in the vicinity of the incident surface, and reforming is performed on substantially the entire cross section of the object to be divided W, as shown in FIGS. A reforming zone 144 connecting the regions 140 is formed. FIG. 7D is a cross-sectional view showing a cross section orthogonal to the cross sections shown in FIGS. 7A to 7C. By applying a force to the object to be divided W so as to separate both sides of the reforming zone 144 from each other, the reforming zone 144 is divided, and the center of the reforming region 140 constituting the reforming zone 144 in general. The split object W is cut using the plane passing through as the cut plane.

<Droplet ejection device>
Next, a droplet discharge device 70 used for disposing a liquid material in the reforming zone 144 will be described with reference to FIG. FIG. 8 is an external perspective view showing a schematic configuration of the droplet discharge device.

  As shown in FIG. 8, the droplet discharge device 70 includes a head mechanism unit 72 having a discharge head 71 that discharges a liquid material, and a division target that is a discharge target of liquid droplets discharged from the discharge head 71. A work mechanism unit 73 having a work mounting table 73A for mounting W, a liquid material supply unit (not shown) for supplying a liquid material to the discharge head 71, and a maintenance device unit for maintaining the discharge head 71 75. In addition, a discharge device control unit 76 that controls these mechanisms and the like is provided.

  Further, the droplet discharge device 70 includes a surface plate 78 for installing the above-described units constituting the droplet discharge device 70. On the upper side of the surface plate 78, a work mechanism unit 73 is disposed so as to extend in the Y-axis direction of the surface plate 78. Above the work mechanism 73, the head mechanism 72 supported by two support pillars fixed to the surface plate 78 extends in a direction (X-axis direction) orthogonal to the work mechanism 73. It is arranged. In the vicinity of one support column of the head mechanism unit 72, a maintenance device unit 75 is disposed. On the other hand, the liquid supply unit and the discharge device control unit 76 are disposed beside the surface plate 78.

  The head mechanism unit 72 includes a discharge head unit 71A having a discharge head 71, and a head carriage 77 that supports the discharge head unit 71A so as to be movable in the Z-axis direction via a Z-axis moving mechanism (not shown). The head mechanism 72 moves the ejection head 71 freely in the X-axis direction by moving the head carriage 77 in the X-axis direction. Moreover, it holds at the moved position. The workpiece mechanism unit 73 moves the workpiece mounting table 73A in the Y-axis direction, thereby freely moving the divided object W placed on the workpiece mounting table 73A in the Y-axis direction. Moreover, it holds at the moved position.

  With these configurations, the droplet discharge device 70 stops when the discharge head 71 moves to the discharge position in the X-axis direction, and synchronizes with the movement in the Y-axis direction of the division target W below. Liquid droplets are discharged. The droplet discharge device 70 controls the division target W that moves in the Y-axis direction and the discharge head 71 that moves in the X-axis direction so as to be liquid at an arbitrary position on the division target W. It is possible to supply the body.

  Next, it is an example of the division object W to be divided by forming the modified region 140 (modified zone 144) using the laser processing device 45 and supplying the liquid material using the droplet discharge device 70. The mother substrate 180 (see FIG. 10) will be described. A liquid crystal display panel 80 (see FIG. 9) is partitioned on the mother substrate 180. In addition, a process of dividing (cutting) the mother substrate 180 into individual liquid crystal display panels 80 using a laser scribing method using the laser processing apparatus 45 will be described.

<LCD panel>
First, the liquid crystal display panel 80 will be described. FIG. 9 is a schematic view showing the structure of the liquid crystal display panel. FIG. 9A is a schematic plan view of the liquid crystal display panel as viewed from the counter substrate side together with each component, and FIG. 9B is a schematic cross-sectional view taken along line AA in FIG. It is. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member can be recognized on the drawing.

  As shown in FIGS. 9A and 9B, the liquid crystal display panel 80 includes an element substrate 81 having a TFT (Thin Film Transistor) element 83, a counter substrate 82 having a counter electrode 86, and a sealing material layer 84. A liquid crystal 85 filled in a gap between an element substrate 81 and a counter substrate 82 bonded by a sealing material to be formed is provided. The element substrate 81 is slightly larger than the counter substrate 82, and the element substrate 81 protrudes from the counter substrate 82 in a frame shape.

  The element substrate 81 uses a quartz glass substrate having a thickness of about 1.2 mm, and has a pixel electrode (not shown) constituting a pixel and one of three terminals connected to the pixel electrode on the surface thereof. The TFT element 83 is formed. The remaining two terminals of the TFT element 83 are connected to a data line (not shown) and a scanning line (not shown) which are arranged in a grid pattern so as to surround the pixel electrode and are insulated from each other. The data line is drawn in the Y-axis direction and connected to the data line driving circuit unit 89 at the terminal unit 90. The scanning lines are drawn out in the X-axis direction and are individually connected to two scanning line driving circuit units 93 and 93 formed in the left and right frame regions. A wiring 92 a that is an input side wiring of the data line driving circuit unit 89 and a wiring 92 b that is an input side wiring of the scanning line driving circuit unit 93 are connected to mounting terminals 91 arranged along the terminal unit 90, respectively. In the frame region opposite to the terminal portion 90, a wiring 92c that connects the two scanning line driving circuit portions 93 and 93 is provided.

  The counter substrate 82 is a transparent glass substrate having a thickness of approximately 1.0 mm, and is provided with a counter electrode 86 as a common electrode. The counter electrode 86 is connected to upper conductive terminals 94a (see FIG. 12A) provided at the four corners of the counter substrate 82 via wirings 96 (see FIG. 12A). The upper conduction terminal 94a is electrically connected to the lower conduction terminal 94b (see FIG. 13A) provided on the element substrate 81 side via the vertical conduction portion 94. A wiring 92d is connected to the lower conduction terminal 94b, and the wiring 92d is also connected to a mounting terminal 91 provided in the terminal portion 90.

  The pixel, the data line, the scanning line, the data line driving circuit unit 89, the mounting terminal 91, the scanning line driving circuit unit 93, the wirings 92a, 92b, 92c, 92d, and the lower conduction terminal 94b are collectively referred to as a lower cell pattern 97b. This is described (see FIG. 13A). The counter electrode 86, the upper conductive terminal 94a, and the wiring 96 are collectively referred to as an upper cell pattern 97a (see FIG. 12A). The wirings 92a, 92b, 92c, and 92d are collectively referred to as the wiring 92.

  Alignment films 88 and 87 are formed on the surface of the element substrate 81 facing the liquid crystal 85 and the surface of the counter substrate 82, respectively. As described above, in order to make each layer and each member large enough to be recognized on the drawing, the scale of each layer and each member is different, and the layer of the liquid crystal 85 has the same thickness as the counter substrate 82 and the like. As shown in the figure, in fact, a thickness of several microns is often used.

  In the liquid crystal display panel 80, a relay substrate that is electrically connected to an external drive circuit is connected to the mounting terminal 91. An input signal from the external driving circuit is input to each data line driving circuit unit 89 and the scanning line driving circuit unit 93, whereby the TFT element 83 is switched for each pixel electrode, and the pixel electrode and the counter electrode 86 are switched. In the meantime, a drive voltage is applied to display.

  In the liquid crystal display panel 80, depending on the type of liquid crystal 85 to be used, that is, depending on the operation mode such as TN (Twisted Nematic) mode, STN (Super Twisted Nematic) mode, or normally white mode / normally black mode. A retardation plate, a polarizing plate, and the like are arranged in a predetermined direction (not shown). In the case where the liquid crystal display panel 80 is configured for color display, for example, red (R), green (G), blue (B) in the region of the counter substrate 82 facing each pixel electrode of the element substrate 81. The color filter is formed together with the protective film. The liquid crystal display panel 80 corresponds to a member or an electro-optical device.

<LCD panel mother board>
Next, the mother substrate 180 on which the liquid crystal display panel 80 is partitioned will be described. FIG. 10 is a schematic view showing a mother substrate on which a liquid crystal display panel is formed. FIG. 10A is a schematic plan view seen from the counter substrate side, and FIG. 10B is a schematic cross-sectional view taken along line BB in FIG. 10A.

  As shown in FIGS. 10A and 10B, the mother substrate 180 is formed by bonding a mother element substrate 181 and a mother counter substrate 182. A plurality of element substrate sections 81 a are formed in the mother element substrate 181. One element substrate section 81 a corresponds to the element substrate 81 of one liquid crystal display panel 80. A plurality of counter substrate sections 82 a are formed in the mother counter substrate 182. One counter substrate section 82 a corresponds to the counter substrate 82 of one liquid crystal display panel 80. The mother element substrate 181 and the mother counter substrate 182 are sealed so that the positional relationship between the element substrate section 81a and the counter substrate section 82a is the positional relationship between the element substrate 81 and the counter substrate 82 in the liquid crystal display panel 80. The layers 84 are bonded together by a sealing material. A liquid crystal 85 is filled in a gap between the mother element substrate 181 and the mother counter substrate 182 surrounded by the sealing material layer 84.

  Cut surfaces for cutting out the liquid crystal display panel 80 from the mother substrate 180 are referred to as an H element cut surface 184, a V element cut surface 186, an H facing cut surface 187, and a V facing cut surface 188, respectively. An H element cut surface 184 indicated by a two-dot chain line is a cut surface of the mother element substrate 181 and is a cut surface extending in the X-axis direction of FIG. A V element cut surface 186 indicated by a two-dot chain line is a cut surface of the mother element substrate 181 and is a cut surface extending in the Y-axis direction of FIG. An H-opposing cutting plane 187 indicated by a one-dot chain line is a cutting plane of the mother counter substrate 182 and is a cutting plane extending in the X-axis direction of FIG. A V-opposing cutting plane 188 indicated by a one-dot chain line is a cutting plane of the mother counter substrate 182 and is a cutting plane extending in the Y-axis direction of FIG. 184a, 184b, and 184c shown in FIG. 10 are H element cut surfaces 184, 186a, 186b, and 186c are V element cut surfaces 186, and 187a, 187b, 187c, 187d, and 187e are respectively H opposing cutting surfaces 187, and 188a, 188b, 188c, 188d, and 188e are V opposing cutting surfaces 188, respectively. The mother substrate 180 corresponds to a substrate or an electro-optical device substrate.

<Formation of liquid crystal display panel>
Next, a process for forming the liquid crystal display panel 80 will be described with reference to FIGS. 11, 12, 13, 14, and 15. FIG. 11 is a flowchart showing a process of forming a liquid crystal display panel. Steps S <b> 11 and S <b> 12 are steps for forming the mother counter substrate 182. Steps S21 to S25 are steps for forming the mother element substrate 181 side, and subsequently executed steps S31 to S36 are performed on the mother element substrate 181 with the mother counter substrate 182 formed in steps S11 and S12. In this process, the mother substrate 180 is formed by bonding, and the mother substrate 180 is divided into individual liquid crystal display panels 80.

  First, the process on the mother counter substrate 182 side will be described. In step S11 of FIG. 11, a plurality of upper cell patterns 97a (see FIG. 12) are formed on the glass wafer. Next, in step S12, an alignment film 87 (see FIG. 9B) is formed to cover the portion of the upper cell pattern 97a where the counter electrode 86 is formed. By executing step S12, a mother counter substrate 182 as shown in FIG. 12 is formed.

  FIG. 12 is a plan view showing the shape of the mother counter substrate. 12A is a plan view of the upper cell pattern for one liquid crystal display panel, and FIG. 12B is a plan view of the mother counter substrate on which a plurality of upper cell patterns are formed. As shown in FIG. 12 (a), the upper cell pattern 97a is an area that is divided into a counter substrate 82 (see FIG. 9 (b)) and is a square area indicated by a one-dot chain line. It is formed in the partition 82a.

  As shown in FIG. 12B, 28 upper cell patterns 97 a are formed on one mother counter substrate 182. Further, an alignment mark (not shown) for aligning the mother counter substrate 182 and the mother element substrate 181 in the surface direction of the substrate is formed on the outer peripheral side of the mother counter substrate 182 where the upper cell pattern 97a is not formed. ) Is formed. When the mother substrate 180 is divided into the liquid crystal display panel 80, the mother counter substrate 182 is individually separated by dividing the mother counter substrate 182 at the H counter cut surface 187 and the V counter cut surface 188 shown by a one-dot chain line in the figure. The counter substrate 82 is divided.

  Next, the process on the mother element substrate 181 side will be described. In step S21 of FIG. 11, a plurality of lower cell patterns 97b (see FIG. 13) are formed on the glass wafer. Next, in step S22, an alignment film 88 (see FIG. 9B) is formed to cover the pixel region 98 (see FIG. 13A) where the pixels, data lines, and scanning lines of the lower cell pattern 97b are formed. . By executing step S22, a mother element substrate 181 as shown in FIG. 13 is formed.

  FIG. 13 is a plan view showing the shape of the mother element substrate. FIG. 13A is a plan view of a lower cell pattern for one liquid crystal display panel, and FIG. 13B is a plan view of a mother element substrate on which a plurality of lower cell patterns are formed. As shown in FIG. 13A, the lower cell pattern 97b is an area which is divided to form an element substrate 81 (see FIG. 9B), which is a rectangular area indicated by a two-dot chain line. It is formed in the substrate section 81a.

  As shown in FIG. 13B, 28 lower cell patterns 97 b are formed on one mother element substrate 181. In addition, an alignment mark (not shown) for aligning the mother counter substrate 182 and the mother element substrate 181 in the surface direction of the substrate is formed on the outer peripheral side of the mother element substrate 181 where the lower cell pattern 97b is not formed. ) Is formed. When dividing the mother substrate 180 into the liquid crystal display panel 80, the mother element substrate 181 is divided by dividing the mother element substrate 181 at the H element cut surface 184 and the V element cut surface 186 indicated by a two-dot chain line in the drawing. Divide into individual element substrates 81.

  Next, in step S23 of FIG. 11, a sealing material is arranged at a position (see FIG. 10) where the sealing material layer 84 around the pixel region 98 (see FIG. 13) is formed in each lower cell pattern 97b. The sealing material includes an adhesive that bonds the mother counter substrate 182 (counter substrate 82) and the mother element substrate 181 (element substrate 81), and a gap material. The gap material is a spherical solid, and is sandwiched between the mother counter substrate 182 (counter substrate 82) and the mother element substrate 181 (element substrate 81), so that the mother counter substrate 182 (counter substrate 82) and the mother element substrate 181 are sandwiched. A cell gap with respect to (element substrate 81) is defined. As described above, the thickness of the layer of the liquid crystal 85, that is, the cell gap is several microns, and the gap material is a sphere having a diameter of the order of several microns and a diameter similar to the cell gap value.

  Next, in step S24, in each lower cell pattern 97b, a conductive material that forms the vertical conductive portion 94 (see FIG. 9) is disposed at a position that covers the rectangular lower conductive terminal 94b of the sealing material layer 84. Next, in step S25, the liquid crystal 85 is disposed in a region surrounded by the sealing material layer 84 in each lower cell pattern 97b.

  Next, in step S31, the mother counter substrate 182 formed by executing step S12 is bonded to the mother element substrate 181 on which the liquid crystal 85 and the like are arranged. By executing step S31, a mother substrate 180 in which a plurality of (in this embodiment, 28) liquid crystal display panels 80 are partitioned is formed.

  Next, in step S32, in the regions along the H opposing cutting surface 187, the V opposing cutting surface 188, the H element cutting surface 184, and the V element cutting surface 186 of the mother counter substrate 182 and the mother element substrate 181, the modified band is formed. 144 is formed. The modified zone 144 is formed using the laser processing apparatus 45 described above.

  The step of forming the modified zone 144 on the H-facing cutting surface 187 and the V-facing cutting surface 188 of the mother counter substrate 182 in step S32 will be described with reference to FIG. FIG. 14 is a schematic cross-sectional view of a mother substrate showing a process of forming a modified zone on the V-opposing cut surface. FIG. 14A is a cross-sectional view of a cross section including a V-facing cut surface, and FIG. 14B is a cross-sectional view of a cross section intersecting the V-facing cut surface.

  As shown in FIG. 14, by condensing the laser light in a region including the portion of the V facing cut surface 188 inside the mother facing substrate 182 and in the vicinity of the surface facing the mother element substrate 181, A modified region 140 is formed. In parallel with the formation of the modified region 140, the mother substrate 180 (mother counter substrate 182) is relatively moved in the direction of arrow a by the Y-axis slide mechanism 56 (see FIG. 6), so that the modified region 140 is substantially continuous. Then, the modified layer 142 is formed continuously at a constant interval.

  As described with reference to FIG. 7, the modified region 142 is further formed so as to be stacked in the Z-axis direction of the formed modified layer 142, so that a modified region is formed over substantially the entire V-opposing cut surface 188. A reforming zone 448 (see FIG. 15) in which 140 is formed is formed. In order to distinguish the surface of the mother counter substrate 182, the surface of the mother counter substrate 182 opposite to the surface facing the mother element substrate 181 is referred to as a surface. The modified layer 142 on the most surface side of the modified zone 448 is such that the modified region 140 constituting the modified layer 142 is exposed on the surface, that is, the surface is also modified. Form to include surface.

  Similar to the formation of the modified zone 448, the modified layer 142 is formed in which the modified regions 140 are connected substantially continuously or at a predetermined interval. A modified zone 447 (see FIG. 15) in which the modified region 140 is formed over substantially the entire surface of the opposing cut surface 187 is formed.

  Further, the modified region 140 is formed over substantially the entire H element cut surface 184 or V element cut surface 186 of the mother element substrate 181 in the same manner as the formation of the modified band 447 and the modified band 448 in the mother counter substrate 182. Further, the modified zone 444 or the modified zone 446 is formed. In order to distinguish the surface of the mother element substrate 181, the surface of the mother element substrate 181 opposite to the surface facing the mother counter substrate 182 is referred to as a surface. Similar to the modified zone 447 and the modified zone 448 of the mother counter substrate 182, the modified zone 444 of the mother element substrate 181 and the modified layer 142 on the most surface side of the modified zone 446 constitute the modified layer 142. The modified region 140 is exposed on the surface, that is, the surface is also modified, and the modified region 140 is formed to include the surface. The cracks formed in the modified region 140 correspond to continuous recesses or a plurality of recesses connected at intervals.

  FIG. 15 is a schematic cross-sectional view of a mother substrate showing a process of disposing water on the mother substrate on which a modified zone is formed. FIG. 15A is a cross-sectional view of a cross section intersecting with the H-opposing cutting plane, and FIG. 15B is a cross-sectional view of a cross section intersecting with the V-opposing cutting plane. A modified zone 447 or a modified zone 448 is formed on the H facing cut surface 187 and the V facing cut surface 188, respectively, and the modified zone is formed on the H element cut surface 184 or the V element cut surface 186, respectively. 444 or a modified zone 446 is formed.

  Next, in step S33 of FIG. 11, water is placed at the positions of the H-opposing cut surface 187 where the modified zone 447 is formed and the V-facing cut surface 188 where the modified zone 448 is formed on the surface of the mother counter substrate 182. 44 is arranged. As described above, the modified region formed using a laser beam having a wavelength of 355 nm with respect to the quartz glass substrate is a minute crack forming region in which minute cracks are formed, and the modified region 140 is a minute region. This is a microcrack formation region having cracks. By arranging the water 44 at the position of the modified zone 447 or the modified zone 448 on the surface of the mother counter substrate 182, the water 44 permeates into the micro cracks of the modified zone 448 (modified region 140). The micro cracks in the modified region 140 correspond to a plurality of concave portions that are connected at an interval, and the water 44 corresponds to a liquid material.

  The arrangement of the water 44 is executed using the droplet discharge device 70 described above. First, the work is performed so that the extending direction of the reforming zone 447 or the reforming zone 448 coincides with the X-axis direction or the Y-axis direction of the droplet discharge device 70 and the mother counter substrate 182 is on the upper side. The mother substrate 180 is mounted on the mounting table 73A. Next, the ejection mechanism 71 is moved to a position facing the reforming zone 447 or the reforming zone 448 formed on the mother counter substrate 182 by the head mechanism 72 and the work mechanism 73.

  As shown in FIGS. 15A and 15B, the ejection head 71 is located at a position facing the reforming zone 448. Next, as shown in FIGS. 15A and 15B, while discharging water 44 as droplets 44a from the discharge head 71 facing the reforming zone 448, the arrow a shown in FIG. The mother counter substrate 182 (mother substrate 180) is relatively moved by the work mechanism 73 in the direction of. As a result, the water 44 in which the droplets 44 a that have landed on the surface of the mother counter substrate 182 are disposed is disposed so as to cover the surface side of the modified zone 448. The arranged water 44 permeates into microcracks in the reforming zone 448 (the reforming region 140).

  Similarly, the water 44 is disposed so as to cover the surface side of the reforming zone 447 and is also infiltrated into micro cracks in the reforming zone 447 (the reforming region 140). Water 44 is disposed on the surface side of all the modified zones 447 and 448 formed on the mother counter substrate 182. Water 44 corresponds to a liquid material.

  Next, in step S34 of FIG. 11, the mother counter substrate 182 is turned into individual counter substrates 82 by heating the water 44 infiltrated into the cracks of the modified zone 447 and the modified zone 448 to expand or vaporize the water. To divide. The heating of the water 44 is performed by condensing the laser light on the modified region 140 into which the water 44 has penetrated. As a laser processing apparatus for irradiating the laser beam, an apparatus similar to the laser processing apparatus 45 described above can be used. In addition, since the water 44 is simply heated, a laser processing apparatus such as a laser marker having a high scanning speed can be used. In order to heat the water 44 efficiently, the water 44 may be colored in advance so that the laser beam can be easily absorbed.

  As the heated water 44 is volume-expanded or vaporized, as described with reference to FIG. 5G, the force in the direction of expanding the cracks in the reforming zone 447 and the reforming zone 448 causes the wall surface of the crack. Added to. Due to the applied force, the mother counter substrate 182 is divided into individual counter substrates 82 at portions of the H counter cut surface 187 and the V counter cut surface 188 that are to be divided. Since the water 44 infiltrated into the minute cracks expands or vaporizes, the gap between the divided counter substrates 82 does not increase, so that each counter substrate 82 is placed in the corresponding element substrate section 81a of the mother element substrate 181. The bonded state is maintained.

  Next, in step S35 of FIG. 11, water is placed on the surface of the mother element substrate 181 at the positions of the H element cut surface 184 where the modified band 444 is formed and the V element cut surface 186 where the modified band 446 is formed. 44 is arranged. Step S35 is performed in the same manner as step S33 described above. The arranged water 44 penetrates into the micro cracks in the reforming zone 444 and the reforming zone 446 (the reforming region 140).

Next, in step S36, the mother element substrate 181 is divided into individual element substrates 81 by heating and expanding or vaporizing the modified zone 444 and the water 44 that has penetrated into the cracks of the modified zone 446. Step S36 is performed in the same manner as step S34 described above. The mother element substrate 181 is separated into individual element substrates 81 at the H element cut surface 184 and the V element cut surface 186, which are planned to be divided, by the force applied by the volume expansion or vaporization of the heated water 44. It is divided into. Since the mother counter substrate 182 is already divided into individual counter substrates 82, the mother element substrate 181 is divided into individual element substrates 81, so that a plurality of liquid crystal display panels 80 are partitioned. 180 is divided into individual liquid crystal display panels 80.
Note that there is almost no difference between the process of dividing the mother counter substrate 182 into the individual counter substrates 82 and the process of dividing the mother element substrate 181 into the individual element substrates 81. It may be executed. Step S36 is performed and the process of forming the liquid crystal display panel 80 is complete | finished.

The effects of the second embodiment will be described below. According to the second embodiment, the following effects can be obtained.
(1) The water 44 infiltrated into the crack of the reformed region 140 on the surface, such as the modified zone 444, expands or vaporizes when heated, and the volume of the water 44 expands. Is applied to the mother counter substrate 182 or the mother element substrate 181 so as to expand the cracks. As a result, cracks in the modified region 140 such as the modified zone 444 are spread, so that the mother counter substrate 182 or the mother element substrate 181 can be divided starting from the modified zone such as the modified zone 444.

  (2) Since the force caused by the expansion of the water 44 that has penetrated into the crack in the modified region 140 acts only on the wall of the crack, the modified region such as the modified zone 444 of the mother counter substrate 182 or the mother element substrate 181 Almost no force is applied to portions other than 140. Accordingly, a portion of the mother counter substrate 182 or the mother element substrate 181 other than the planned division surface such as the H counter cut surface 187 in which the modified zone such as the modified zone 444 is formed, the mother counter substrate 182 or the mother element substrate. The possibility that the TFT element 83, the counter electrode 86, the data line driving circuit unit 89, the wiring 92, the sealing material layer 84, and the like formed on the 181 are damaged by being deformed by force can be extremely reduced. .

  (3) A method in which a modified region is formed along a plane to be divided and a workpiece is cut from the modified region as a starting point is almost free from cutting waste, and has a cross section that is accurate and has less unevenness. can get. Therefore, by forming the modified band 144 such as the modified band 444 on the mother counter substrate 182 and the mother element substrate 181 using the laser processing device 45 as a part that triggers the division, it is accurate and less uneven. A suitable liquid crystal display panel 80 including the counter substrate 82 or the element substrate 81 having a cross section can be formed.

  (4) In order to arrange the water 44 in the reforming zone 144 such as the reforming zone 444, the droplet discharge device 70 is used. The droplet discharge device 70 can supply a liquid to the position by discharging the liquid as a droplet and landing the droplet on an arbitrary position on the division target W. It is also possible to adjust the amount to be arranged depending on the size and number of droplets. Accordingly, an amount necessary for filling the reforming zone 144 with the water 44 can be disposed, and unnecessary water 44 can be prevented from being disposed in a portion other than the reforming zone 144. .

  (5) A laser processing device is used to heat the water 44 disposed in the reforming zone 144 such as the reforming zone 444. By using the laser processing apparatus, only the vicinity of the portion where the laser beam is condensed can be heated. Accordingly, a portion of the mother counter substrate 182 or the mother element substrate 181 other than the planned division surface such as the H counter cut surface 187 in which the modified zone such as the modified zone 444 is formed, the mother counter substrate 182 or the mother element substrate. The possibility that the TFT element 83, the counter electrode 86, the data line driver circuit portion 89, the wiring 92, the sealing material layer 84, and the like formed in 181 are damaged by heating can be extremely reduced.

  As mentioned above, although preferred embodiment which concerns on this invention was described referring an accompanying drawing, embodiment of this invention is not restricted to the said embodiment. The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention, and can be implemented as follows.

  (Modification 1) In the above embodiment, the water 44 is expanded by heating, but it is not essential to heat the water 44 for expansion. By cooling the water to 4 ° C. or lower, it may be expanded by volume expansion or solidification. The water 44 in this case corresponds to a liquid material having a cooling expansion property or a liquid material having a characteristic of expanding when solidified.

  Although the cooling method is not particularly limited, a cooling device in which a cooling terminal similar to the heating terminal 46 is combined with a Peltier element can be used. A cooling device comprising a cooling terminal and a Peltier element can be easily miniaturized, and as in the case of the heating terminal 46 described above, only the vicinity of the liquid material is selectively cooled by bringing it close to the liquid material to be cooled. Can do. The Peltier element can also be used as a heat source for heating.

  (Modification 2) In the above-described embodiment, the method of using water 44 as the liquid material for expansion has been described as an example, but it is not essential to use water 44 as the liquid material. Any liquid material may be used as long as it is infiltrated into the recess and can be expanded after being infiltrated.

  (Modification 3) In the second embodiment, as an example of the electro-optical device, the mother substrate 180 in which the liquid crystal display panel 80 is partitioned is cut and divided into individual liquid crystal display panels 80. Although the example of the division method is described, the electro-optical device formed by division is not limited to the liquid crystal display panel. The present invention can also be applied to the manufacture of electro-optical devices other than liquid crystal display devices. For example, the present invention can be applied to the manufacture of an organic EL (electroluminescence) display device.

  (Modification 4) In the above embodiment, the wafer 1A to be divided is a silicon substrate, and the mother counter substrate 182 and the mother element substrate 181 are quartz glass substrates. It is not limited to a glass substrate. The present invention can also be applied to, for example, a quartz substrate made of quartz, a substrate made of Pyrex (registered trademark), Neoceram (registered trademark), or OA-10.

  (Modification 5) In the second embodiment, the mother counter substrate 182 and the mother element substrate 181 which are quartz glass substrates have been described as examples of the target for forming the modified region 140 as the concave portion. The target material for forming the region 140 is not limited to quartz glass. For example, a silicon substrate made of silicon constituting the wafer 1A described in the first embodiment, a quartz crystal substrate made of quartz, a substrate made of Pyrex (registered trademark), Neoceram (registered trademark), or OA-10, etc. Can be applied.

  (Modification 6) In the first embodiment, the groove is formed by using the scribe groove forming apparatus 5 including the cutter 12 that forms the scribe groove by pressure contact. However, the cutter is grooved by pressure contact. It does not restrict to what forms. You may use the cutter which forms a groove | channel by grinding or cutting a workpiece.

  An outline of an example in which the groove 240 is formed using the grindstone-like cutter 212 will be described with reference to FIG. FIG. 16 is a schematic cross-sectional view showing a state in which grooves are formed using a grindstone cutter. FIG. 16A is a cross-sectional view taken along the plane to be divided, and FIG. As shown in FIG. 16A, the groove 240 is formed by moving the cutter 212 in the direction of the arrow b and moving it relative to the wafer 1A in the direction of the arrow a. The groove 240 having an appropriate depth is formed by appropriately selecting the depth of cut. As shown in FIG. 16 (b), the groove 240 can easily form a wall surface substantially parallel to the scheduled division surface 248. The force caused by the expansion of the liquid material disposed in the groove 240 acts on the wall surface substantially parallel to the planned division surface 248 so as to spread the wafer 1A in a direction substantially perpendicular to the planned division surface 248. Therefore, it is possible to efficiently divide the wafer 1A on the scheduled division surface 248.

  (Modification 7) In the above-described embodiment, the water 44 is disposed in the scribe groove 41 or the modified region 140 using the dispenser device 30 or the droplet discharge device 70. However, in order to dispose the liquid material, It is not essential to use a dispenser device or a droplet discharge device. If the object to be divided does not interfere with the liquid material, the liquid material may be arranged in the recess by a method such as immersing the whole object to be divided in the liquid material.

  (Modification 8) In the above-described embodiment, the water 44 disposed in the scribe groove 41 or the modified region 140 is heated using a heating device having a heating terminal 46 or a laser processing device. In order to heat, it is not essential to heat locally using a heating terminal or a laser processing apparatus. For example, if the material to be divided is a material that can withstand high temperatures and has a smaller expansion coefficient than the liquid material, a heating method that makes the environment a high temperature environment can also be employed.

  (Modification 9) In the second embodiment, the laser processing device 45 moves the stage 50 in a direction perpendicular to the Z axis with respect to the condensing lens 53 so that the condensing lens 53 faces the mother. Although the substrate 182 or the mother element substrate 181 is relatively moved, it is not essential to move the stage 50 side. The relative movement between the condenser lens 53 and the mother counter substrate 182 or the mother element substrate 181 may be performed by moving the condenser lens 53 side.

  (Modification 10) In the second embodiment, the laser light source 51 used to form the modified region 140 is an Nd: YAG laser that uses a crystal obtained by doping yttrium-aluminum-garnet with neodymium as a laser medium. However, the laser light source may be a laser light source using another laser medium. For example, another YAG laser, YLF laser, YVO4 laser, or the like may be used. In addition to the third harmonic, the Nd: YAG fundamental wave can also be used for the Nd: YAG laser. As the laser medium and the laser light to be oscillated, it is preferable to select an appropriate one according to the material to be modified.

  (Modification 11) In the above embodiment, the laser processing device 45 adjusts the position of the condensing point with respect to the mother counter substrate 182 or the mother element substrate 181 in the Z-axis direction by using the Z-axis slide mechanism 54 to adjust the condensing lens 53. Although it was performed by moving, it is not essential to move the condenser lens 53. The position adjustment of the condensing point with respect to the mother counter substrate 182 or the mother element substrate 181 in the Z-axis direction may be adjusted by moving the stage 50 in the Z-axis direction. Since the laser light irradiation device including the laser light source 51 and the condensing lens 53 does not need to have an adjustment device, the entire laser light irradiation device can be made lighter and smaller than when the laser light irradiation device has an adjustment device. .

  (Modification 12) In the embodiment described above, the modified layer 142 is formed so that the modified regions 140 are connected so as to be substantially connected to each other, but it is not essential that the modified regions 140 are connected substantially. As long as it can be divided by applying a small stress, the modified regions 140 may be connected to each other with a space therebetween. By separating the interval, the relative movement speed can be increased and the processing speed can be increased as compared with the configuration in which the modified regions 140 are substantially connected.

  (Modification 13) In the above embodiment, the modified zone is formed by laminating the modified layers 142 so as to be substantially connected to each other. However, it is not essential that the modified layers 142 are substantially connected. As long as it can be divided by applying a small stress, the modified layers 142 may be stacked at intervals. By separating the interval, the time required for forming the modified zone can be shortened as compared with the configuration in which the modified layers 142 are substantially connected.

  (Modification 14) In the first embodiment, the water 44 is heated by bringing the heating terminal 46 into contact with the wafer 1A, but it is not essential to bring the heating terminal into contact with the object to be divided. In the case where sufficient heating can be performed only by bringing them close to each other, a method of heating them close to each other may be used.

  (Modification 15) In the second embodiment, the mother substrate 180 in which the liquid crystal display panel 80 is partitioned and formed includes a mother element substrate 181 in which a plurality of element substrates 81 are partitioned and a plurality of counter substrates 82. The liquid crystal display panel 80 having the element substrate 81 and the counter substrate 82 is formed by dividing the mother substrate 180 and is formed by bonding the mother counter substrate 182 with the partition. However, it is not essential that the mother substrate on which the liquid crystal display panel 80 is formed has the mother element substrate 181 and the mother counter substrate 182. Either the mother element substrate 181 or the mother counter substrate 182 is divided in advance into individual element substrates 81 or counter substrates 82, and the individual element substrates 81 or counter substrates 82 are respectively divided into the mother counter substrate 182 and the mother. A mother substrate on which the liquid crystal display panel 80 is partitioned may be formed by being attached to the element substrate 181.

  A mother substrate that is previously divided into individual substrates can be partitioned and formed without any gaps. In the case of the liquid crystal display panel 80, since the counter substrate 82 has a smaller area than the element substrate 81, the counter substrate 82 is partitioned and formed on the mother counter substrate 182 with a gap. By dividing the mother counter substrate into the individual counter substrates 82 in advance, the mother counter substrate can be formed in a partitioned manner without any gap, and thus can be made smaller than the mother counter substrate 182.

  Even when the mother element substrate or the mother counter substrate is divided into individual element substrates 81 or counter substrates 82 in advance, the substrate dividing method of the present invention can be applied. In this case, the mother element substrate or the mother counter substrate that is divided in advance corresponds to the mother electro-optical substrate, and the element substrate 81 or the counter substrate 82 that is formed separately corresponds to the electro-optical substrate.

  In the embodiment described above, as an example of the processing object, a method for dividing a silicon substrate in which integrated circuits and the like are partitioned and a method for dividing a mother substrate in which a liquid crystal display panel which is an example of an electro-optical device is partitioned are described. However, the processing method according to the present invention can be used as a processing method for various objects to be processed. For example, a glass substrate dividing method used for cutting a glass substrate, a crystal substrate dividing method used for cutting a crystal substrate such as a crystal oscillator, a piezoelectric element dividing method such as a piezo element, a plastic plate dividing method, and components constituting an apparatus Thus, it can be used as a method for dividing a silicon substrate in which constituent members made of a silicon material are partitioned.

The top view which shows the shape of a wafer. Explanatory drawing which shows schematic structure of a scribe groove | channel formation apparatus. The external appearance perspective view which shows schematic structure of a dispenser apparatus. The flowchart which shows the process of dividing | segmenting a wafer into a semiconductor chip. FIG. 3 is a schematic cross-sectional view showing a process of dividing a wafer into semiconductor chips. The schematic diagram which shows the structure of a laser processing apparatus. The schematic cross section of the division | segmentation target object which shows the process of forming a modification zone in a division | segmentation target object. FIG. 3 is an external perspective view showing a schematic configuration of a droplet discharge device. The schematic plan view and schematic sectional drawing which show the structure of a liquid crystal display panel. The schematic plan view and schematic sectional drawing which show the mother board | substrate with which the liquid crystal display panel was dividedly formed. The flowchart which shows the process of forming a liquid crystal display panel. (A) The top view of the upper cell pattern for one liquid crystal display panel. (B) The top view of the mother opposing substrate in which the several upper cell pattern was formed. (A) The top view of the lower cell pattern for one liquid crystal display panel. (B) The top view of the mother element substrate in which the several lower cell pattern was formed. The schematic cross section of the mother board | substrate which shows the process of forming a modification zone | band in V opposing cut surface. The schematic cross section of the mother board | substrate which shows the process of arrange | positioning water to the mother board | substrate with which the modified zone was formed. The schematic cross section which shows the state which forms a groove | channel using a grindstone-like cutter.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 1A ... Wafer, 3 ... Dividing line, 5 ... Scribing groove formation apparatus, 30 ... Dispenser apparatus, 30a ... Planned division surface, 40 ... Crack, 41 ... Scribing groove, 44 ... Water, 44a ... Droplet, 45 ... Laser processing device, 46 ... heating terminal, 70 ... droplet discharge device, 80 ... liquid crystal display panel, 81 ... element substrate, 82 ... counter substrate, 140 ... modified region, 142 ... modified layer, 144 ... modified Band: 180 ... Mother substrate, 181 ... Mother element substrate, 182 ... Mother counter substrate, 184 ... H element cut surface, 186 ... V element cut surface, 187 ... H counter cut surface, 188 ... V counter cut surface, 212 ... Cutter , 240, grooves, 248, split surfaces, 444, 446, 447, 448, modified zones.

Claims (14)

A substrate dividing method for dividing a substrate on which a plurality of members are partitioned into the respective members,
Forming a plurality of recesses that are continuous or spaced apart on the planned division surface set on the substrate, and a recess forming step;
Filling the liquid into the recess or the plurality of recesses, a liquid filling step,
An expansion step of expanding the filled liquid material, and dividing the substrate.   2. The substrate dividing method according to claim 1, wherein, in the expansion step, the liquid material is expanded by heating the liquid material to raise a temperature of the liquid material. 3.   The substrate dividing method according to claim 1, wherein in the expansion step, the liquid material is expanded by heating the liquid material to vaporize the liquid material.   4. The substrate according to claim 2, wherein in the expansion step, the liquid material is expanded by irradiating the liquid material with a laser beam to raise or vaporize the temperature of the liquid material. 5. How to split.   4. The expansion step is performed by causing the heating element to abut or approach the opening of the recess or the plurality of recesses to increase the temperature of the liquid material or to evaporate the liquid material. A method for dividing a substrate as described in 1.   2. The substrate division according to claim 1, wherein the liquid material is a liquid material having a cooling expansion property, and in the expansion step, the liquid material is expanded by cooling the liquid material. 3. Method.   The liquid material is a liquid material having a property of expanding when solidified, and in the expansion step, the liquid material is expanded by cooling and solidifying the liquid material. 2. The method for dividing a substrate according to 1.   8. The substrate dividing method according to claim 1, wherein the recess forming step is a step of forming a groove along the scheduled division surface using a cutter. 9.   The recess forming step focuses the laser beam on a region including the portion of the planned division surface inside the substrate, thereby forming a modified region in the region including the portion of the predetermined division surface inside the substrate. The substrate dividing method according to claim 1, wherein the substrate dividing method is a forming step.   In the liquid filling step, the liquid is supplied to the recess or the plurality of recesses using a droplet discharge device capable of discharging the liquid as droplets toward an arbitrary position. 10. A method for dividing a substrate according to any one of claims 1 to 9.   2. The liquid material filling step, wherein the liquid material is supplied to the concave portion or the plurality of concave portions using a dispenser device capable of supplying the liquid material toward an arbitrary position. The substrate dividing method according to claim 9.   12. A method for manufacturing a semiconductor device, comprising: dividing a wafer on which a semiconductor device is partitioned using the substrate dividing method according to claim 1 into each of the semiconductor devices.   12. The substrate dividing method according to claim 1, wherein an electro-optical device substrate in which an electro-optical device is partitioned is divided into the electro-optical devices. Manufacturing method of optical device.   12. Dividing a mother electro-optic substrate in which an electro-optic substrate constituting an electro-optic device is partitioned into the electro-optic substrates using the substrate dividing method according to claim 1. A method for manufacturing an electro-optical device.

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