TW201417663A - Method for manufacturing package board - Google Patents
Method for manufacturing package board Download PDFInfo
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- TW201417663A TW201417663A TW101140432A TW101140432A TW201417663A TW 201417663 A TW201417663 A TW 201417663A TW 101140432 A TW101140432 A TW 101140432A TW 101140432 A TW101140432 A TW 101140432A TW 201417663 A TW201417663 A TW 201417663A
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- Prior art keywords
- layer
- copper foil
- conductive
- electrical contact
- release film
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 116
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 126
- 239000011889 copper foil Substances 0.000 claims description 103
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 8
- 239000002699 waste material Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 230000001568 sexual effect Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 abstract description 11
- 239000010949 copper Substances 0.000 abstract description 11
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
- H05K3/4658—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern characterized by laminating a prefabricated metal foil pattern, e.g. by transfer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
本發明涉及電路板製作技術領域,尤其涉及一種承載板的製作方法。The present invention relates to the field of circuit board manufacturing technology, and in particular, to a method for manufacturing a carrier board.
承載板可為晶片提供電連接、保護、支撐、散熱、組裝等功效,以實現多引腳化,縮小封裝產品體積、改善電性能及散熱性、超高密度或多晶片模組化的目的。The carrier board can provide electrical connection, protection, support, heat dissipation, assembly and other functions for the wafer to achieve multi-pin, reduce package volume, improve electrical performance and heat dissipation, ultra-high density or multi-chip modularization.
在採用承載板對晶片進行封裝的過程中,當承載板的厚度較小時,需要採用硬性的支撐板進行支撐。現有技術中,通常同時製作正反兩個基板同時進行封裝,而將支撐板設置在兩個基板之間。為了能夠使得封裝後得到的正反兩面的晶片封裝體相互分離,通常需要採用一種特殊的銅箔作為支撐板與承載板相連接的部分。所述特殊的銅箔為兩層銅箔之間夾設一層膠層的結構,並且兩層銅箔的厚度不同。這種銅箔的價格昂貴,增加了承載板的製作的成本。In the process of packaging the wafer by the carrier board, when the thickness of the carrier board is small, it is required to be supported by a rigid support board. In the prior art, the two substrates are usually fabricated simultaneously and simultaneously, and the support plate is disposed between the two substrates. In order to be able to separate the front and back wafer packages obtained after packaging, it is usually necessary to use a special copper foil as a part of the support plate to be connected to the carrier. The special copper foil is a structure in which a layer of a glue layer is sandwiched between two layers of copper foil, and the thickness of the two layers of copper foil is different. This copper foil is expensive and increases the cost of the production of the carrier sheet.
有鑑於此,提供一種承載板的製作方法,以降低承載板的製作成本實屬必要。In view of this, it is necessary to provide a manufacturing method of the carrier board to reduce the manufacturing cost of the carrier board.
一種承載板的製作方法,包括步驟:提供第一銅箔、第一離型膜、膠片、第二離型膜及第二銅箔,所述膠片具有中心區,所述第一離型膜與第二離型膜的形狀及大小與所述中心區的形狀及大小相互對應;依次壓合第一銅箔、第一離型膜、膠片、第二離型膜及第二銅箔成為一個整體,所述膠片的中心區的兩側與第一離型膜和第二離型膜相互接觸,得到多層基板,所述多層基板包括產品區及環繞產品區的廢料區,所述產品區在第一銅箔表面的正投影位於所述中心區在第一銅箔表面的正投影之內;在所述第一銅箔表面電鍍形成多個第一電性接觸墊,在所述第二銅箔表面上電鍍形成多個第二電性接觸墊;在所述多個第一電性接觸墊及第一銅箔表面壓合第一介電層及第一導電層,在多個所述第二電性接觸墊及第二銅箔表面壓合第二介電層及第二導電層;在第一介電層及第一導電層內形成第一導電盲孔,並將第一導電層製作形成第三電性接觸墊,在第二介電層及第二導電層內形成多個第二導電盲孔,並將第二導電層製作形成多個第四電性接觸墊;沿著產品區與廢料區的交界線進行切割,並使得產品區中的第一銅箔與第一離型膜自然脫離,產品區中的第二銅箔與第二離型膜自然脫離,從而得到相互分離的第一承載基板和第二承載基板;以及從第一承載基板中去除第一銅箔,得到第一承載板,從第二承載基板中去除第二銅箔,得到第二承載板。A manufacturing method of a carrier board, comprising the steps of: providing a first copper foil, a first release film, a film, a second release film and a second copper foil, wherein the film has a central area, and the first release film and The shape and size of the second release film correspond to the shape and size of the central region; and sequentially pressing the first copper foil, the first release film, the film, the second release film and the second copper foil into one whole The two sides of the central portion of the film are in contact with the first release film and the second release film to obtain a multi-layer substrate, and the multi-layer substrate includes a product area and a waste area surrounding the product area, and the product area is in the An orthographic projection of a copper foil surface is located within the orthographic projection of the central region on the surface of the first copper foil; a plurality of first electrical contact pads are electroplated on the surface of the first copper foil, and the second copper foil is Forming a plurality of second electrical contact pads on the surface; pressing the first dielectric layer and the first conductive layer on the plurality of first electrical contact pads and the first copper foil surface, in the plurality of the second The second contact layer and the second copper layer are pressed against the second dielectric layer and the second conductive layer; Forming a first conductive blind via in the dielectric layer and the first conductive layer, and forming a first conductive layer to form a third electrical contact pad, and forming a plurality of second conductive blinds in the second dielectric layer and the second conductive layer a hole, and forming a second conductive layer to form a plurality of fourth electrical contact pads; cutting along a boundary line between the product area and the waste area, and causing the first copper foil in the product area to be naturally separated from the first release film The second copper foil in the product area is naturally separated from the second release film, thereby obtaining the first carrier substrate and the second carrier substrate separated from each other; and removing the first copper foil from the first carrier substrate to obtain the first carrier The plate removes the second copper foil from the second carrier substrate to obtain a second carrier plate.
相較於習知技術,本技術方案提供的承載板進行製作過程中,通過在膠片的兩側設置有橫截面積小於第一銅箔和第二銅箔的離型膜,這樣,在製作形成導電線路之後,可以容易地將膠片與第一承載基板和第二承載基板分離。因此,本技術方案提供的承載板的製作方法,可以避免使用價格較為昂貴的特殊銅箔結構,從而降低了承載板的製作成本。Compared with the prior art, the carrier plate provided by the technical solution is provided with a release film having a cross-sectional area smaller than that of the first copper foil and the second copper foil on both sides of the film during the manufacturing process, thereby forming and forming After the conductive lines, the film can be easily separated from the first carrier substrate and the second carrier substrate. Therefore, the manufacturing method of the carrier board provided by the technical solution can avoid the use of a special copper foil structure which is relatively expensive, thereby reducing the manufacturing cost of the carrier board.
本技術方案提供的封裝基板的製作方法包括如下步驟:The manufacturing method of the package substrate provided by the technical solution includes the following steps:
第一步,請參閱圖1,提供第一銅箔11、第二銅箔12、第一離型膜13、第二離型膜14及膠片15。In the first step, referring to FIG. 1, a first copper foil 11, a second copper foil 12, a first release film 13, a second release film 14, and a film 15 are provided.
第一銅箔11和第二銅箔12均為厚度為5微米至20微米的銅箔。優選地,第一銅箔11和第二銅箔12的厚度均為10微米至15微米。第一離型膜13和第二離型膜14可以為PE離型膜或PET離型膜等。膠片15為FR4環氧玻璃布半固化膠片。The first copper foil 11 and the second copper foil 12 are each a copper foil having a thickness of 5 μm to 20 μm. Preferably, the thickness of the first copper foil 11 and the second copper foil 12 are both 10 micrometers to 15 micrometers. The first release film 13 and the second release film 14 may be a PE release film or a PET release film or the like. Film 15 is a FR4 epoxy glass cloth semi-cured film.
第一銅箔11、第二銅箔12及膠片15的形狀及大小均相同。第一離型膜13和第二離型膜14的形狀與第一銅箔11的形狀相同,第一離型膜13和第二離型膜14的尺寸小於第一銅箔11的尺寸。具體的,第一離型膜13和第二離型膜14的橫截面積小於第一銅箔11的橫截面積。膠片15包括中心區151及環繞中心區151的邊緣區152。中心區151的形狀與第一離型膜13和第二離型膜14形狀相同,尺寸大小相等。The shapes and sizes of the first copper foil 11, the second copper foil 12, and the film 15 are the same. The shapes of the first release film 13 and the second release film 14 are the same as those of the first copper foil 11, and the sizes of the first release film 13 and the second release film 14 are smaller than the size of the first copper foil 11. Specifically, the cross-sectional areas of the first release film 13 and the second release film 14 are smaller than the cross-sectional area of the first copper foil 11. Film 15 includes a central region 151 and an edge region 152 that surrounds central region 151. The shape of the central portion 151 is the same as that of the first release film 13 and the second release film 14, and is equal in size.
膠片15為FR4環氧玻璃布半固化膠片。Film 15 is a FR4 epoxy glass cloth semi-cured film.
第二步,請參閱圖2,依次堆疊並一次壓合第一銅箔11、第一離型膜13、膠片15、第二離型膜14及第二銅箔12成為一個整體,得到多層基板110。In the second step, referring to FIG. 2, the first copper foil 11, the first release film 13, the film 15, the second release film 14, and the second copper foil 12 are laminated and laminated one at a time to obtain a multilayer substrate. 110.
堆疊所述第一銅箔11、第一離型膜13、膠片15、第二離型膜14及第二銅箔12時,使得第一銅箔11、第一離型膜13、膠片15、第二離型膜14及第二銅箔12中心相互對齊。由於第一離型膜13和第二離型膜14的尺寸小於第一銅箔11、第二銅箔12及膠片15尺寸,第一離型膜13和第二離型膜14分別與膠片15的中心區151相對應。在進行壓合時,膠片15的邊緣區152的兩側分別與第一銅箔11和第二銅箔12相互結合,膠片15的中心區151的兩側分別與第一離型膜13和第二離型膜14相接觸,膠片15的中心區151並不與第一銅箔11和第二銅箔12相互接觸。When the first copper foil 11, the first release film 13, the film 15, the second release film 14, and the second copper foil 12 are stacked, the first copper foil 11, the first release film 13, the film 15, The centers of the second release film 14 and the second copper foil 12 are aligned with each other. Since the sizes of the first release film 13 and the second release film 14 are smaller than those of the first copper foil 11, the second copper foil 12, and the film 15, the first release film 13 and the second release film 14 are respectively associated with the film 15. The central area 151 corresponds. When the pressing is performed, both sides of the edge region 152 of the film 15 are bonded to the first copper foil 11 and the second copper foil 12, respectively, and the two sides of the central portion 151 of the film 15 are respectively associated with the first release film 13 and the first The two release films 14 are in contact with each other, and the central portion 151 of the film 15 is not in contact with the first copper foil 11 and the second copper foil 12.
多層基板110具有相對的第一表面101和第二表面102,其中第一表面101為第一銅箔11的的表面,第二表面102為第二銅箔12的的表面。The multilayer substrate 110 has opposing first and second surfaces 101, 102, wherein the first surface 101 is the surface of the first copper foil 11, and the second surface 102 is the surface of the second copper foil 12.
多層基板110具有產品區域103及環繞產品區域103的廢料區域104。產品區域103的橫截面積小於第一離型膜13的橫截面積。產品區域103在第一銅箔11表面的正投影位於第一離型膜13在第一銅箔11表面的正投影內。The multilayer substrate 110 has a product area 103 and a waste area 104 surrounding the product area 103. The cross-sectional area of the product region 103 is smaller than the cross-sectional area of the first release film 13. The orthographic projection of the product region 103 on the surface of the first copper foil 11 is located within the orthographic projection of the first release film 13 on the surface of the first copper foil 11.
可以理解的是,當用於同時製作多個封裝基板時,產品區域103可以包括多個相互分離的產品單元,每個產品單元與對應的一個封裝基板相對應。It can be understood that when used to simultaneously fabricate a plurality of package substrates, the product region 103 may include a plurality of product units separated from each other, each product unit corresponding to a corresponding one of the package substrates.
請參閱圖3,在壓合形成多層基板110之後,還可以包括在多層基板110內形成多個第一工具孔16的步驟。形成的第一工具孔16的開設的位置與膠片15的邊緣區152相對應。即第一工具孔16貫穿膠片15的邊緣區152及邊緣區152對應的第一銅箔11、第一離型膜13、第二離型膜14及第二銅箔12。第一工具孔16用於下一步驟中進行定位。Referring to FIG. 3, after the multilayer substrate 110 is formed by pressing, a step of forming a plurality of first tool holes 16 in the multilayer substrate 110 may be further included. The opened position of the formed first tool hole 16 corresponds to the edge area 152 of the film 15. That is, the first tool hole 16 penetrates the edge portion 152 of the film 15 and the first copper foil 11, the first release film 13, the second release film 14, and the second copper foil 12 corresponding to the edge region 152. The first tool hole 16 is used for positioning in the next step.
第四步,請參閱圖4至圖6,在第一銅箔11表面形成多個第一電性接觸墊31,在第二銅箔12表面形成第二電性接觸墊32。In the fourth step, referring to FIG. 4 to FIG. 6 , a plurality of first electrical contact pads 31 are formed on the surface of the first copper foil 11 , and a second electrical contact pad 32 is formed on the surface of the second copper foil 12 .
多個第一電性接觸墊31和多個第二電性接觸墊32的形成可以採用如下方法:The forming of the plurality of first electrical contact pads 31 and the plurality of second electrical contact pads 32 may take the following methods:
首先,在第一銅箔11的表面形成第一光致抗蝕劑圖形41,在第二銅箔12的表面形成第二光致抗蝕劑圖形42。具體的,可以先通過貼合幹膜或者印刷液態感光油墨形成覆蓋整個第一銅箔11和第二銅箔12的光致抗蝕劑層。然後,通過曝光及顯影選擇性去除部分所述光致抗蝕劑層後形成第一光致抗蝕劑圖形41和第二光致抗蝕劑圖形42。First, a first photoresist pattern 41 is formed on the surface of the first copper foil 11, and a second photoresist pattern 42 is formed on the surface of the second copper foil 12. Specifically, the photoresist layer covering the entire first copper foil 11 and the second copper foil 12 may be formed by laminating a dry film or printing a liquid photosensitive ink. Then, a portion of the photoresist layer is selectively removed by exposure and development to form a first photoresist pattern 41 and a second photoresist pattern 42.
然後,通過電鍍方式,在從第一光致抗蝕劑圖形41露出的第一銅箔11表面形成第一電性接觸墊31,在從第二光致抗蝕劑圖形42露出的第二銅箔12表面形成第二電性接觸墊32。Then, a first electrical contact pad 31 is formed on the surface of the first copper foil 11 exposed from the first photoresist pattern 41 by electroplating, and a second copper is exposed from the second photoresist pattern 42. A second electrical contact pad 32 is formed on the surface of the foil 12.
最後,去除第一光致抗蝕劑圖形41和第二光致抗蝕劑圖形42。本實施例中,可以採用剝膜液與第一光致抗蝕劑圖形41和第二光致抗蝕劑圖形42發生反應,從而使得第一光致抗蝕劑圖形41從第一銅箔11表面脫離,第二光致抗蝕劑圖形42從第二銅箔12表面脫離。Finally, the first photoresist pattern 41 and the second photoresist pattern 42 are removed. In this embodiment, the stripping liquid may be reacted with the first photoresist pattern 41 and the second photoresist pattern 42 such that the first photoresist pattern 41 is from the first copper foil 11 The surface is detached and the second photoresist pattern 42 is detached from the surface of the second copper foil 12.
第一電性接觸墊31及第二電性接觸墊32均位於產品區域103內。The first electrical contact pads 31 and the second electrical contact pads 32 are both located within the product region 103.
第五步,請參閱圖7,在第一銅箔11及第一電性接觸墊31的表面層壓第一介電層51及第一導電層61,在第二銅箔12及第二電性接觸墊32的表面層壓第二介電層52及第二導電層62。In the fifth step, referring to FIG. 7, the first dielectric layer 51 and the first conductive layer 61 are laminated on the surface of the first copper foil 11 and the first electrical contact pad 31, and the second copper foil 12 and the second electrical layer are laminated. The second dielectric layer 52 and the second conductive layer 62 are laminated on the surface of the contact pad 32.
其中,第一介電層51和第一導電層61可以為一個整體結構,即由第一介電層51和第一導電層61共同構成的單面覆銅基板。第二介電層52和第二導電層62也可以為一個整體結構,即由第二介電層52和第二導電層62共同構成的單面覆銅基板。The first dielectric layer 51 and the first conductive layer 61 may be a single structure, that is, a single-sided copper-clad substrate composed of the first dielectric layer 51 and the first conductive layer 61. The second dielectric layer 52 and the second conductive layer 62 may also be a unitary structure, that is, a single-sided copper-clad substrate composed of the second dielectric layer 52 and the second conductive layer 62.
在此步驟之後,還可以包括在壓合於一起的第一介電層51、第一導電層61、多層基板110、第二介電層52及第二導電層62內形成第二工具孔17,第二工具孔17位於廢料區1104內。第二工具孔17可以與第一工具孔16相互重合。第二工具孔17用於在後續外層製作過程中進行定位。After the step, the second tool hole 17 may be formed in the first dielectric layer 51, the first conductive layer 61, the multilayer substrate 110, the second dielectric layer 52, and the second conductive layer 62 which are laminated together. The second tool hole 17 is located in the waste area 1104. The second tool hole 17 may coincide with the first tool hole 16. The second tool hole 17 is used for positioning during subsequent outer layer fabrication.
第六步,請參閱圖8及圖10,在第一導電層61及第一介電層51內形成多個第一導電盲孔53,在第二導電層62及第二介電層52內形成多個第二導電盲孔54,並將第一導電層61製作形成第一導電線路層63,將第二導電層62製作形成第二導電線路層64,第一電性接觸墊31通過第一導電盲孔53與第一導電線路層63相互電導通,第二電性接觸墊32通過第二導電盲孔54與第二導電線路層64相互電導通。In the sixth step, referring to FIG. 8 and FIG. 10, a plurality of first conductive vias 53 are formed in the first conductive layer 61 and the first dielectric layer 51, and are disposed in the second conductive layer 62 and the second dielectric layer 52. Forming a plurality of second conductive vias 54 and forming a first conductive layer 61 to form a first conductive wiring layer 63, and forming a second conductive layer 62 to form a second conductive wiring layer 64. The first electrical contact pads 31 pass through A conductive blind via 53 and the first conductive trace layer 63 are electrically connected to each other, and the second electrical contact pad 32 is electrically connected to the second conductive trace layer 64 via the second conductive via 54.
第一導電盲孔53的形成可以採用如下方法:The first conductive blind via 53 can be formed by the following method:
首先,採用鐳射燒蝕的方式在第一導電層61和第一介電層51內形成第一盲孔55,第一電性接觸墊31從第一盲孔55的底部露出。First, a first blind via 55 is formed in the first conductive layer 61 and the first dielectric layer 51 by laser ablation, and the first electrical contact pad 31 is exposed from the bottom of the first blind via 55.
然後,在第一盲孔55的內壁及從第一盲孔55露出的第一電性接觸墊31形成導電金屬層56,從而得到第一導電盲孔53。所述導電金屬層56可以採用化學鍍銅及電鍍銅的方式形成。可以理解的是,導電金屬層56也可以形成於整個第一導電層61上,以增加第一導電層61的厚度。Then, the conductive metal layer 56 is formed on the inner wall of the first blind via 55 and the first electrical contact pad 31 exposed from the first blind via 55, thereby obtaining the first conductive via 53. The conductive metal layer 56 can be formed by electroless copper plating and copper plating. It can be understood that the conductive metal layer 56 can also be formed on the entire first conductive layer 61 to increase the thickness of the first conductive layer 61.
第二導電盲孔54的形成方法可以與第一導電盲孔53的形成方法相同。The method of forming the second conductive via 54 may be the same as the method of forming the first conductive via 53.
第一導電線路層63和第二導電線路層64可以通過影像轉移工藝及蝕刻工藝形成。本實施例中,第一導電線路層63包括多條第一導電線路631及多個第三電性接觸墊632。第一導電線路631電連接於第一導電盲孔53與第三電性接觸墊632之間。第二導電線路層64包括第二導電線路641及第四電性接觸墊642。第二導電線路641電連接於第二導電盲孔54與第四電性接觸墊642之間。可以理解的是,第一導電線路631的條數及第三電性接觸墊632的個數可以根據待封裝的晶片進行設定,當待封裝的晶片需要與多個第三電性接觸墊632進行連接時,第一導電線路層63可以設定有多根第一導電線路631及多個第三電性接觸墊632。同樣,第四電性接觸墊642及第二導電線路641的數量均可以為多個。The first conductive wiring layer 63 and the second conductive wiring layer 64 may be formed by an image transfer process and an etching process. In this embodiment, the first conductive circuit layer 63 includes a plurality of first conductive lines 631 and a plurality of third electrical contact pads 632. The first conductive line 631 is electrically connected between the first conductive blind via 53 and the third electrical contact pad 632. The second conductive circuit layer 64 includes a second conductive trace 641 and a fourth electrical contact pad 642. The second conductive line 641 is electrically connected between the second conductive blind via 54 and the fourth electrical contact pad 642. It can be understood that the number of the first conductive lines 631 and the number of the third electrical contact pads 632 can be set according to the wafer to be packaged, and the wafer to be packaged needs to be performed with the plurality of third electrical contact pads 632. When connected, the first conductive circuit layer 63 may be provided with a plurality of first conductive lines 631 and a plurality of third electrical contact pads 632. Similarly, the number of the fourth electrical contact pads 642 and the second conductive lines 641 may be plural.
第七步,請參閱圖11,在第一導電線路631上形成第一防焊層71,並在第三電性接觸墊632上形成第一保護層72。在第二導電線路641上形成第二防焊層81,並在第四電性接觸墊642上形成第二保護層82。In the seventh step, referring to FIG. 11 , a first solder resist layer 71 is formed on the first conductive trace 631 , and a first protective layer 72 is formed on the third electrical contact pad 632 . A second solder resist layer 81 is formed on the second conductive trace 641, and a second protective layer 82 is formed on the fourth electrical contact pad 642.
第一防焊層71及第二防焊層81可以通過印刷液態防焊油墨,然後烘烤固化形成。第一保護層72和第二保護層82可以通過鍍鎳金的方式形成。The first solder resist layer 71 and the second solder resist layer 81 can be formed by printing a liquid solder resist ink and then baking and curing. The first protective layer 72 and the second protective layer 82 may be formed by nickel plating gold.
第八步,請參閱圖12及圖13,沿著產品區域103與廢料區域104的交界線進行切割形成環形的切口105,從而得到相互分離的第一承載基板100a和第二承載基板100b。In the eighth step, referring to FIG. 12 and FIG. 13, the annular slit 105 is cut along the boundary line between the product region 103 and the scrap region 104, thereby obtaining the first carrier substrate 100a and the second carrier substrate 100b which are separated from each other.
在產品區域103內,第一離型膜13和第二離型膜14與膠片15相互接觸,第一銅箔11及第二銅箔12並不與膠片15相互結合,當沿著產品區域103與廢料區域104的交界線進行切割時,第一銅箔11與第一離型膜13分離,第二離型膜14與第二銅箔12相互分離,從而得到兩個相互分離的第一承載基板100a和第二承載基板100b。In the product area 103, the first release film 13 and the second release film 14 are in contact with the film 15, and the first copper foil 11 and the second copper foil 12 are not bonded to the film 15, when along the product area 103. When cutting with the boundary line of the scrap area 104, the first copper foil 11 is separated from the first release film 13, and the second release film 14 and the second copper foil 12 are separated from each other, thereby obtaining two first carriers separated from each other. The substrate 100a and the second carrier substrate 100b.
第九步,請參閱圖14,去除第一承載基板100a的第一銅箔11,使得第一電性接觸墊31露出,得到第一承載板10a,去除第二承載基板100b的第二銅箔12,使得第二電性接觸墊32露出,得到第二承載板10b。In the ninth step, referring to FIG. 14, the first copper foil 11 of the first carrier substrate 100a is removed, so that the first electrical contact pad 31 is exposed to obtain the first carrier plate 10a, and the second copper foil of the second carrier substrate 100b is removed. 12, the second electrical contact pad 32 is exposed to obtain the second carrier plate 10b.
本步驟中,採用蝕刻的方式去除第一銅箔11和第二銅箔12。在進行蝕刻時,也可以將與第一銅箔11相鄰的部分第一電性接觸墊31去除,並將與第二銅箔12相鄰的部分第二電性接觸墊32去除,以減小第一電性接觸墊31和第二電性接觸墊32的厚度。In this step, the first copper foil 11 and the second copper foil 12 are removed by etching. When etching is performed, a portion of the first electrical contact pads 31 adjacent to the first copper foil 11 may also be removed, and a portion of the second electrical contact pads 32 adjacent to the second copper foil 12 may be removed to reduce The thickness of the first first electrical contact pad 31 and the second electrical contact pad 32.
可以理解的是,當產品區域103內包括多個電路板單元時,在此步驟之後,還可以包括切割的步驟,以將每個電路板單元對應形成一個承載板單元。It can be understood that when a plurality of circuit board units are included in the product area 103, after this step, a step of cutting may be further included to form each of the circuit board units correspondingly into one carrier board unit.
本技術方案提供的承載板的製作方法還可以進一步包括對得到的承載板10a和10b進行電測的步驟,以檢測得到的承載板的電學性能。請參閱圖15,所述的承載板的製作方法還可以進一步包括在第一電性接觸墊31和第二電性接觸墊32外露的表面形成第三保護層90的步驟,所述第三保護層90可以為有機保焊層(OSP)。The manufacturing method of the carrier board provided by the technical solution may further include the step of performing electrical measurement on the obtained carrier boards 10a and 10b to detect the electrical performance of the obtained carrier board. Referring to FIG. 15 , the manufacturing method of the carrier board may further include the step of forming a third protective layer 90 on the exposed surface of the first electrical contact pad 31 and the second electrical contact pad 32 , the third protection. Layer 90 can be an organic solder mask (OSP).
本技術方案提供的承載板進行製作過程中,通過在膠片15的兩側設置有橫截面積小於第一銅箔11和第二銅箔12的離型膜13及14,這樣,在製作形成導電線路之後,可以容易地將膠片與第一承載基板和第二承載基板分離。因此,本技術方案提供的承載板的製作方法,可以避免使用價格較為昂貴的特殊銅箔結構,從而降低了承載板的製作成本。In the manufacturing process of the carrier board provided by the technical solution, the release films 13 and 14 having a cross-sectional area smaller than that of the first copper foil 11 and the second copper foil 12 are disposed on both sides of the film 15, so that conductive is formed in the fabrication. After the line, the film can be easily separated from the first carrier substrate and the second carrier substrate. Therefore, the manufacturing method of the carrier board provided by the technical solution can avoid the use of a special copper foil structure which is relatively expensive, thereby reducing the manufacturing cost of the carrier board.
惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
10a...第一承載板10a. . . First carrier board
10b...第二承載板10b. . . Second carrier
11...第一銅箔11. . . First copper foil
12...第二銅箔12. . . Second copper foil
13...第一離型膜13. . . First release film
14...第二離型膜14. . . Second release film
15...膠片15. . . film
16...第一工具孔16. . . First tool hole
17...第二工具孔17. . . Second tool hole
31...第一電性接觸墊31. . . First electrical contact pad
32...第二電性接觸墊32. . . Second electrical contact pad
41...第一光致抗蝕劑圖形41. . . First photoresist pattern
42...第二光致抗蝕劑圖形42. . . Second photoresist pattern
51...第一介電層51. . . First dielectric layer
52...第二介電層52. . . Second dielectric layer
53...第一導電盲孔53. . . First conductive blind hole
54...第二導電盲孔54. . . Second conductive blind hole
61...第一導電層61. . . First conductive layer
62...第二導電層62. . . Second conductive layer
63...第一導電線路層63. . . First conductive circuit layer
64...第二導電線路層64. . . Second conductive circuit layer
71...第一防焊層71. . . First solder mask
72...第一保護層72. . . First protective layer
81...第二防焊層81. . . Second solder mask
82...第二保護層82. . . Second protective layer
100a...第一承載基板100a. . . First carrier substrate
100b...第二承載基板100b. . . Second carrier substrate
101...第一表面101. . . First surface
102...第二表面102. . . Second surface
103...產品區域103. . . Product area
104...廢料區域104. . . Waste area
105...切口105. . . incision
110...多層基板110. . . Multilayer substrate
151...中心區151. . . central area
152...邊緣區152. . . Marginal zone
631...第一導電線路631. . . First conductive line
632...第三電性接觸墊632. . . Third electrical contact pad
641...第二導電線路641. . . Second conductive line
642...第四電性接觸墊642. . . Fourth electrical contact pad
90...第三保護層90. . . Third protective layer
圖1為本技術方案實施例提供的第一銅箔、第一離型膜、膠片、第二離型膜及第二銅箔的剖面示意圖。1 is a schematic cross-sectional view of a first copper foil, a first release film, a film, a second release film, and a second copper foil according to an embodiment of the present application.
圖2為本技術方案實施例提供的壓合第一銅箔、第一離型膜、膠片、第二離型膜及第二銅箔後得到多層基板的剖面示意圖。2 is a schematic cross-sectional view showing a multilayer substrate obtained by pressing a first copper foil, a first release film, a film, a second release film, and a second copper foil according to an embodiment of the present invention.
圖3為圖2中的承載基板中形成第一工具孔後的剖面示意圖。3 is a cross-sectional view showing the first tool hole formed in the carrier substrate of FIG. 2.
圖4為圖3的第一濺鍍銅層上形成第一光致抗蝕劑圖形,在第二濺鍍銅層上形成第二光致抗蝕劑圖形後的剖面示意圖。4 is a cross-sectional view showing a first photoresist pattern formed on the first sputtered copper layer of FIG. 3 and a second photoresist pattern formed on the second sputtered copper layer.
圖5為圖4在第一光致抗蝕劑圖形中形成第一電性接觸墊,在第二光致抗蝕劑圖形中形成第二電性接觸墊後的剖面示意圖。FIG. 5 is a cross-sectional view showing the first electrical contact pad formed in the first photoresist pattern and the second electrical contact pad formed in the second photoresist pattern.
圖6為圖5去除第一光致抗蝕劑圖形和第二光致抗蝕劑圖形後的剖面示意圖。FIG. 6 is a cross-sectional view of FIG. 5 after removing the first photoresist pattern and the second photoresist pattern.
圖7為圖6的第一銅箔表面壓合第一介電層和第一導電層並在第二銅箔表面壓合第二介電層和第二導電層後的剖面示意圖。7 is a schematic cross-sectional view showing the first copper foil surface of FIG. 6 being pressed against the first dielectric layer and the first conductive layer and the second dielectric layer and the second conductive layer being pressed against the surface of the second copper foil.
圖8及9為圖7的第一介電層和第一導電層中形成第一導電盲孔,在第二介電層和第二導電層中形成第二導電盲孔的剖面示意圖。8 and 9 are schematic cross-sectional views showing the formation of a first conductive via hole in the first dielectric layer and the first conductive layer of FIG. 7 and a second conductive via hole in the second dielectric layer and the second conductive layer.
圖10為圖9中的第一導電層製作形成第一導電線路層,第二導電層製作形成第二導電線路層後的剖面示意圖。FIG. 10 is a cross-sectional view showing the first conductive layer of FIG. 9 forming a first conductive circuit layer, and the second conductive layer being formed to form a second conductive circuit layer.
圖11是圖10的第一導電線路上形成第一防焊層,第三電性接觸墊上形成第一保護層,第二導電線路上形成第二防焊層,第四電性接觸墊上形成第二保護層後的剖面示意圖。11 is a first solder resist layer formed on the first conductive line of FIG. 10, a first protective layer is formed on the third electrical contact pad, a second solder resist layer is formed on the second conductive trace, and a fourth solder contact pad is formed on the fourth conductive pad. Schematic diagram of the cross section after the second protective layer.
圖12及13是切割得到的第一承載基板和第二承載基板的剖面示意圖。12 and 13 are schematic cross-sectional views showing the first carrier substrate and the second carrier substrate cut.
圖14為圖13中的第一承載基板去除第一銅箔得到第一承載板,第二承載基板去除第二銅箔得到第二承載板的剖面示意圖。14 is a cross-sectional view showing the first carrier substrate in FIG. 13 with the first copper foil removed to obtain the first carrier, and the second carrier substrate to remove the second copper foil to obtain the second carrier.
圖15為圖14的第一承載板和第二承載板形成第三保護層後的剖面示意圖。15 is a cross-sectional view showing the first carrier and the second carrier of FIG. 14 after forming a third protective layer.
10a...第一承載板10a. . . First carrier board
10b...第二承載板10b. . . Second carrier
31...第一電性接觸墊31. . . First electrical contact pad
32...第二電性接觸墊32. . . Second electrical contact pad
53...第一導電盲孔53. . . First conductive blind hole
54...第二導電盲孔54. . . Second conductive blind hole
71...第一防焊層71. . . First solder mask
72...第一保護層72. . . First protective layer
641...第二導電線路641. . . Second conductive line
642...第四電性接觸墊642. . . Fourth electrical contact pad
90...第三保護層90. . . Third protective layer
Claims (12)
提供第一銅箔、第一離型膜、膠片、第二離型膜及第二銅箔,所述膠片具有中心區,所述第一離型膜與第二離型膜的形狀及大小與所述中心區的形狀及大小相互對應;
依次壓合第一銅箔、第一離型膜、膠片、第二離型膜及第二銅箔成為一個整體,所述膠片的中心區的兩側與第一離型膜和第二離型膜相互接觸,得到多層基板,所述多層基板包括產品區及環繞產品區的廢料區,所述產品區在第一銅箔表面的正投影位於所述中心區在第一銅箔表面的正投影之內;
在所述第一銅箔表面電鍍形成多個第一電性接觸墊,在所述第二銅箔表面上電鍍形成多個第二電性接觸墊;
在所述多個第一電性接觸墊及第一銅箔表面壓合第一介電層及第一導電層,在多個所述第二電性接觸墊及第二銅箔表面壓合第二介電層及第二導電層;
在第一介電層及第一導電層內形成第一導電盲孔,並將第一導電層製作形成第三電性接觸墊,在第二介電層及第二導電層內形成多個第二導電盲孔,並將第二導電層製作形成多個第四電性接觸墊;
沿著產品區與廢料區的交界線進行切割,並使得產品區中的第一銅箔與第一離型膜自然脫離,產品區中的第二銅箔與第二離型膜自然脫離,從而得到相互分離的第一承載基板和第二承載基板;以及
從第一承載基板中去除第一銅箔,得到第一承載板,從第二承載基板中去除第二銅箔,得到第二承載板。A method for manufacturing a carrier board, comprising the steps of:
Providing a first copper foil, a first release film, a film, a second release film, and a second copper foil, the film having a central region, a shape and a size of the first release film and the second release film The shape and size of the central area correspond to each other;
Pressing the first copper foil, the first release film, the film, the second release film and the second copper foil as a whole, the two sides of the central portion of the film are separated from the first release film and the second release film The films are in contact with each other to obtain a multi-layer substrate comprising a product region and a waste region surrounding the product region, the orthographic projection of the product region on the surface of the first copper foil being located at the central projection of the central portion on the surface of the first copper foil within;
Forming a plurality of first electrical contact pads on the surface of the first copper foil, and forming a plurality of second electrical contact pads on the surface of the second copper foil;
Pressing the first dielectric layer and the first conductive layer on the surface of the plurality of first electrical contact pads and the first copper foil, and pressing the surface of the plurality of the second electrical contact pads and the second copper foil a second dielectric layer and a second conductive layer;
Forming a first conductive via hole in the first dielectric layer and the first conductive layer, and forming a first conductive layer to form a third electrical contact pad, and forming a plurality of layers in the second dielectric layer and the second conductive layer Two conductive blind holes, and the second conductive layer is formed to form a plurality of fourth electrical contact pads;
Cutting along the boundary line between the product area and the scrap area, and the first copper foil in the product area is naturally separated from the first release film, and the second copper foil in the product area is naturally separated from the second release film, thereby Obtaining a first carrier substrate and a second carrier substrate separated from each other; and removing the first copper foil from the first carrier substrate to obtain a first carrier plate, and removing the second copper foil from the second carrier substrate to obtain a second carrier plate .
在第一導電線路層上形成第一防焊層,以使得第一防焊層覆蓋所述多條第一導電線路的表面以及從第一導電線路層暴露出的第一介電層的表面,並暴露出所述多個第三電性接觸墊;以及
在第二導電線路層上形成第二防焊層,以使得第二防焊層覆蓋所述多條第二導電線路的表面以及從第二導電線路層暴露出的第二介電層的表面,並暴露出所述多個第四電性接觸墊。The method for manufacturing a carrier board according to claim 3, wherein before the cutting along the boundary line between the product area and the scrap area, the method further comprises the steps of:
Forming a first solder resist layer on the first conductive wiring layer such that the first solder resist layer covers a surface of the plurality of first conductive traces and a surface of the first dielectric layer exposed from the first conductive trace layer, And exposing the plurality of third electrical contact pads; and forming a second solder resist layer on the second conductive circuit layer such that the second solder resist layer covers the surface of the plurality of second conductive lines and The second conductive circuit layer exposes a surface of the second dielectric layer and exposes the plurality of fourth electrical contact pads.
The method of fabricating a carrier board according to claim 1, wherein the first dielectric layer and the first conductive layer are laminated on the plurality of first electrical contact pads and the first copper foil surface, in the plurality of After the second electrical contact pad and the second copper foil surface are pressed against the second dielectric layer and the second conductive layer, the first electrical layer, the first conductive layer, the multilayer substrate, and the second dielectric layer are further laminated A second tool hole is formed in the dielectric layer and the second conductive layer, and the second tool hole is located outside the product area.
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CN201210393732.2A CN103779233A (en) | 2012-10-17 | 2012-10-17 | Bearing plate manufacturing method |
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TW201417663A true TW201417663A (en) | 2014-05-01 |
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TW101140432A TW201417663A (en) | 2012-10-17 | 2012-10-31 | Method for manufacturing package board |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110876239A (en) * | 2018-08-31 | 2020-03-10 | 庆鼎精密电子(淮安)有限公司 | Circuit board and manufacturing method thereof |
TWI812037B (en) * | 2021-03-05 | 2023-08-11 | 大陸商南通越亞半導體有限公司 | Temporary carrier plate, manufacturing method thereof, and manufacturing method of packaging substrate |
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CN111315131A (en) * | 2018-12-11 | 2020-06-19 | 鹏鼎控股(深圳)股份有限公司 | Circuit board and manufacturing method thereof |
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JP4334005B2 (en) * | 2005-12-07 | 2009-09-16 | 新光電気工業株式会社 | Wiring board manufacturing method and electronic component mounting structure manufacturing method |
TWI377655B (en) * | 2009-01-16 | 2012-11-21 | Advanced Semiconductor Eng | Method for manufacturing coreless package substrate |
TWI434386B (en) * | 2009-10-13 | 2014-04-11 | Unimicron Technology Corp | Method of fabricating package structure |
CN102054714B (en) * | 2009-11-06 | 2012-10-03 | 欣兴电子股份有限公司 | Method for manufacturing packaging structure |
TW201220964A (en) * | 2010-11-01 | 2012-05-16 | Unimicron Technology Corp | Carrier board |
-
2012
- 2012-10-17 CN CN201210393732.2A patent/CN103779233A/en active Pending
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Cited By (3)
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CN110876239A (en) * | 2018-08-31 | 2020-03-10 | 庆鼎精密电子(淮安)有限公司 | Circuit board and manufacturing method thereof |
CN110876239B (en) * | 2018-08-31 | 2022-01-11 | 庆鼎精密电子(淮安)有限公司 | Circuit board and manufacturing method thereof |
TWI812037B (en) * | 2021-03-05 | 2023-08-11 | 大陸商南通越亞半導體有限公司 | Temporary carrier plate, manufacturing method thereof, and manufacturing method of packaging substrate |
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